CN203530490U - Polycrystalline silicon ingot furnace thermal field structure - Google Patents
Polycrystalline silicon ingot furnace thermal field structure Download PDFInfo
- Publication number
- CN203530490U CN203530490U CN201320715342.2U CN201320715342U CN203530490U CN 203530490 U CN203530490 U CN 203530490U CN 201320715342 U CN201320715342 U CN 201320715342U CN 203530490 U CN203530490 U CN 203530490U
- Authority
- CN
- China
- Prior art keywords
- crucible
- heater
- polycrystalline silicon
- graphite
- thermal field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 62
- 239000010439 graphite Substances 0.000 claims abstract description 62
- 238000005266 casting Methods 0.000 claims description 29
- 210000001320 hippocampus Anatomy 0.000 claims description 22
- 238000010792 warming Methods 0.000 claims description 22
- 239000000919 ceramic Substances 0.000 claims description 18
- 239000000835 fiber Substances 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000009940 knitting Methods 0.000 claims description 12
- 230000003028 elevating effect Effects 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 abstract description 20
- 238000010438 heat treatment Methods 0.000 abstract description 14
- 238000009413 insulation Methods 0.000 abstract description 9
- 238000002844 melting Methods 0.000 abstract description 9
- 230000008018 melting Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 239000007788 liquid Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012857 repacking Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a polycrystalline silicon ingot furnace thermal field structure capable of improving heating efficiency and melting efficiency. The polycrystalline silicon ingot furnace thermal field structure comprises a furnace body, wherein a lower supporting insulation board and an insulation cover are arranged in the furnace body; the lower supporting insulation board and the insulation cover form an insulation cage; a lifting rod capable of enabling the insulation cover to move up and down is connected onto the insulation cover; a crucible, a crucible guard board, a graphite bottom plate, a graphite cover plate, a lateral heater, a top heater and a heat exchange platform are arranged in the insulation cage; the distance between the bottom of the lateral heater and the upper surface of the graphite bottom plate is 13-17 cm, so that the relative contact area of the lateral heater and a silicon material in the crucible is increased, the effective heating area of the lateral heater is increased, and the heating time and the melting time of the silicon material are shortened. As a result, the heating efficiency and the melting efficiency are improved, the consumed energy is relatively reduced, and the production cost is reduced. The polycrystalline silicon ingot furnace thermal field structure is suitable for being popularized and applied in the field of polycrystalline silicon production equipment.
Description
Technical field
The utility model relates to production of polysilicon apparatus field, especially a kind of thermal field structure of polycrystalline silicon casting furnace.
Background technology
Solar cell can be electric energy by transform light energy, is an emphasis of modern Energy-saving Society development.According to the difference of body material, existing solar cell is divided into polysilicon solar cell, monocrystaline silicon solar cell and class monocrystaline silicon solar cell.Wherein, the transformation efficiency of monocrystaline silicon solar cell is high, but production cost is also high, the transformation efficiency of polysilicon solar cell is than the low 1%-2% of monocrystaline silicon solar cell, but its production cost is also low, and class monocrystaline silicon solar cell is the battery between monocrystalline silicon battery and polysilicon solar cell.Consider, solar cell in the market still be take polysilicon solar cell as main.
The existing polycrystal silicon ingot for the production of polysilicon solar cell adopts casting ingot process system conventionally, casting ingot process is generally realized by thermal field structure of polycrystalline silicon casting furnace, existing thermal field structure of polycrystalline silicon casting furnace comprises, comprise body of heater, on body of heater, be provided with aspirating hole, in described body of heater, be provided with subiculum warming plate and stay-warm case, stay-warm case is placed on subiculum warming plate, stay-warm case and subiculum warming plate form heat insulating cage jointly, on described stay-warm case, be connected with the elevating lever that can make stay-warm case move up and down, in described heat insulating cage, be provided with crucible, crucible guard boards, graphite base plate, graphite cover plate, sidepiece well heater, top heater, heat exchange platform, described graphite base plate is placed on heat exchange platform, crucible is placed on graphite base plate, crucible guard boards is arranged on crucible outside, sidepiece well heater is arranged on the outside of crucible guard boards, graphite cover plate is arranged on crucible top, top heater is arranged on graphite cover plate top, described heat exchange platform is fixed on bottom of furnace body by graphite column, the upper end of crucible guard boards is provided with exhaust emissions hole, also comprise inlet pipe, described inlet pipe is successively through body of heater, stay-warm case, top heater, after graphite cover plate, stretch in crucible.
Current casting ingot process, is first after spraying-stocking process, then enters ingot casting operation.
Spraying: can react with crucible after silicon material high temperature melting, introduce impurity, and cause sticky pot, affect the quality of silicon ingot, so need to spray one deck silicon nitride solution between crucible and silicon material, utilize silicon nitride can effectively isolate silicon material and crucible, after silicon nitride solution spraying completes, carry out hyperthermia drying, the moisture evaporation by silicon nitride solution, just can make crucible inwall adhere to one deck silicon nitride coating again.
Charging: after crucible is dried, by fragmentary silicon material, in order, requirement and weight packs silicon material in crucible into.
The crucible of charged just can carry out next step casting ingot process, first charged crucible is packed in the body of heater of ingot furnace, after installing on request, by ingot furnace closing lid, the ingot furnace that closing lid is later, just forms the chamber of a sealing, the sealed crucible that installs silicon material is inner at ingot furnace, the casting ingot process that brings into operation, whole casting ingot process divides 6 processes, vacuumizes-heats-melt-grow brilliant-annealing-cooling.
S11, vacuumize: the air in body of heater is taken away from aspirating hole, and airborne oxygen and silicon material generation oxidizing reaction in the process that prevents from heating up, affect silicon ingot quality.Vacuumizing is to utilize vacuum pump that the air in body of heater is extracted out, until reach opening of device requirement.
S12, heating: after having vacuumized, enter the heating phase, heating is to approach temperature of fusion in order to make fast silicon material heat up, now the environment in furnace chamber is vacuum environment, can be conducive to, by being attached to the water vapour on silicon material surface, by the method vacuumizing, extract out, and be rapidly heated.
S13, fusing: in melting process, need in the chamber of sealing, fill argon gas, avoid being attached to the silicon nitride coating generation decomposition reaction of crucible inwall, argon gas is to be filled with in body of heater by inlet pipe.After fusing starts, in body of heater, start inflation, by processing sequence, be inflated to after specified pressure, start dynamically to keep.
S14, long brilliant: the silicon material having melted, start long crystalline substance, long brilliant process is to rising by the stay-warm case of body of heater inside, liquid-state silicon starts heat radiation from bottom, the liquid-state silicon of bottom becomes solid state si, and be accompanied by the rising of stay-warm case and scattering and disappearing of heat, slowly upwards solidify, until whole silicon ingot has solidified.
S15, annealing: because long brilliant process starts in bottom, and follow stay-warm case to rise, until top, push up like this because the reason of heat radiation at the end, will exist must temperature head, produces internal stress.The effect of annealing is exactly to guarantee, under isoperibol, to eliminate temperature head, thereby eliminates internal stress.
S16, cooling: quick cooling silicon ingot is to tapping temperature in furnace chamber.
The thermal source of thermal field structure of polycrystalline silicon casting furnace is sidepiece well heater and top heater, wherein the installation site of sidepiece well heater has a great impact for the thermal field tool of polycrystalline silicon ingot or purifying furnace, especially in heating phase and fusion stage of silicon material, directly affect its required heat-up time and fusing time, the bottom of the sidepiece well heater of existing polycrystalline silicon ingot or purifying furnace and the distance of graphite plate upper surface are 45cm, although this mounting means does not have too much influence for the heating and melting of silicon material, but, due in actual mechanical process, silicon material in crucible all can not be filled, this just causes the relative contact of sidepiece well heater and silicon material long-pending less, and then heating efficiency and melting efficiency also lower, the required time is longer, and the well heater of required relatively high power just can meet the demands, energy consumption is larger, cause production cost higher.
Utility model content
Technical problem to be solved in the utility model is to provide and a kind ofly can either improves heating efficiency and melting efficiency can reduce the thermal field structure of polycrystalline silicon casting furnace of energy consumption again.
The utility model solves the technical scheme that its technical problem adopts: this thermal field structure of polycrystalline silicon casting furnace, comprise body of heater, on body of heater, be provided with aspirating hole, in described body of heater, be provided with subiculum warming plate and stay-warm case, stay-warm case is placed on subiculum warming plate, stay-warm case and subiculum warming plate form heat insulating cage jointly, on described stay-warm case, be connected with the elevating lever that can make stay-warm case move up and down, in described heat insulating cage, be provided with crucible, crucible guard boards, graphite base plate, graphite cover plate, sidepiece well heater, top heater, heat exchange platform, described graphite base plate is placed on heat exchange platform, crucible is placed on graphite base plate, crucible guard boards is arranged on crucible outside, sidepiece well heater is arranged on the outside of crucible guard boards, graphite cover plate is arranged on crucible top, top heater is arranged on graphite cover plate top, described heat exchange platform is fixed on bottom of furnace body by graphite column, the upper end of crucible guard boards is provided with exhaust emissions hole, also comprise inlet pipe, described inlet pipe is successively through body of heater, stay-warm case, top heater, after graphite cover plate, stretch in crucible, distance between the bottom of described sidepiece well heater and graphite plate upper surface is 13cm～17mm.
Further, the distance between the bottom of described sidepiece well heater and graphite plate upper surface is 15mm.
Further, on described graphite cover plate, be provided with a plurality of through holes.
Be further, described bottom of furnace body is provided with overflow blanket, described overflow blanket is four-layer structure, be followed successively by from top to bottom knitting ceramic fiber blanket layer, knitting ceramic fiber blanket layer, ceramic fiber blanket layer, carbon carpet veneer, the thickness of described knitting ceramic fiber blanket layer is that the thickness of 10mm, knitting ceramic fiber blanket layer is that the thickness of 10mm, ceramic fiber blanket layer is that the thickness of 25mm, carbon carpet veneer is 10mm.
Further, the upper surface of described overflow blanket is provided with overflow silk.
Further, between adjacent graphite column, be provided with overflow silk.
Further, on described subiculum warming plate, be provided with a plurality of overflow weirs.
Further, between described crucible and crucible guard boards, be provided with carbon felt.
Further, described exhaust emissions hole is circular hole.
The beneficial effects of the utility model are: by the bottom of sidepiece well heater and the distance between graphite plate upper surface, be set to 13cm～17mm, the relative contact of the silicon material in sidepiece well heater and crucible is long-pending like this increases greatly, make effective heating-surface area of sidepiece well heater become large, can greatly shorten heat-up time and the fusing time of silicon material, thereby improve heating efficiency and melting efficiency, the spent energy is corresponding minimizing also, simultaneously, in the long brilliant stage, the power during work of sidepiece well heater also can reduce, can reduce energy consumption again, cost-saving.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model thermal field structure of polycrystalline silicon casting furnace;
Fig. 2 is the structural representation of graphite cover plate described in the utility model;
Fig. 3 is the structural representation of overflow blanket described in the utility model;
Fig. 4 is the structural representation of crucible guard boards described in the utility model;
In figure, be labeled as: body of heater 1, aspirating hole 2, subiculum warming plate 3, stay-warm case 4, elevating lever 5, crucible 6, crucible guard boards 7, graphite base plate 8, graphite cover plate 9, sidepiece well heater 10, top heater 11, heat exchange platform 12, exhaust emissions hole 13, inlet pipe 14, through hole 17, overflow blanket 18, overflow silk 19, overflow weir 20, carbon felt 21, graphite column 22.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further illustrated.
As shown in Figures 1 to 4, this thermal field structure of polycrystalline silicon casting furnace, comprise body of heater 1, on body of heater 1, be provided with aspirating hole 2, in described body of heater 1, be provided with subiculum warming plate 3 and stay-warm case 4, stay-warm case 4 is placed on subiculum warming plate 3, stay-warm case 4 and the common formation heat insulating of subiculum warming plate 3 cage, on described stay-warm case 4, be connected with the elevating lever 5 that can make stay-warm case 4 move up and down, in described heat insulating cage, be provided with crucible 6, crucible guard boards 7, graphite base plate 8, graphite cover plate 9, sidepiece well heater 10, top heater 11, heat exchange platform 12, described graphite base plate 8 is placed on heat exchange platform 12, crucible 6 is placed on graphite base plate 8, crucible guard boards 7 is arranged on crucible 6 outsides, sidepiece well heater 10 is arranged on the outside of crucible guard boards 7, graphite cover plate 9 is arranged on crucible 6 tops, top heater 11 is arranged on graphite cover plate 9 tops, described heat exchange platform 12 is fixed on body of heater 1 bottom by graphite column 22, the upper end of crucible guard boards 7 is provided with exhaust emissions hole 13, also comprise inlet pipe 14, described inlet pipe 14 is successively through body of heater 1, stay-warm case 4, top heater 11, after graphite cover plate 9, stretch in crucible 6, distance between the bottom of described sidepiece well heater 10 and graphite base plate 8 upper surfaces is 13cm～17cm.By the bottom of sidepiece well heater 10 and the distance between graphite base plate 8 upper surfaces, be set to 13cm～17mm, the relative contact of the silicon material in sidepiece well heater 10 and crucible 6 is long-pending like this will increase, make effective heating-surface area of sidepiece well heater 10 become large, can greatly shorten heat-up time and the fusing time of silicon material, thereby improve heating efficiency and melting efficiency, the spent energy is corresponding minimizing also, simultaneously, in the long brilliant stage, the power during work of sidepiece well heater 10 also can reduce, can reduce energy consumption again, cost-saving.As preferably, the distance between the bottom of described sidepiece well heater 10 and graphite base plate 8 upper surfaces is 15cm.
In long brilliant process, crucible 6 inside need to have certain thermograde from top to bottom, be that temperature in crucible 6 reduces from the top down gradually, thermograde changes more obvious, the speed of growth of ingot casting is faster, the temperature of crucible 6 internal upper parts is mainly to provide by top heater 11, the heat of top heater 11 is delivered in crucible 6 after seeing through graphite cover plate 9 again, due to the obstruct through graphite cover plate 9, the temperature of graphite cover plate 9 tops will be higher than the temperature of graphite cover plate 9 belows, because the sidepiece well heater 10 of existing thermal field structure of polycrystalline silicon casting furnace and top heater 11 are all unified controls, and in the long brilliant stage, temperature must be controlled at certain scope, Here it is makes sidepiece well heater 10 and the top heater 11 all can only be with identical power work, that is to say that the heat that sidepiece well heater 10 and top heater 11 provide is certain, if make the temperature of crucible 6 internal upper parts higher, just must make more heats can see through graphite cover plate 9 is delivered in crucible 6, thereby the interior thermograde of crucible 6 is changed obviously, the utility model provides a kind of simple and effective way to reach the interior thermograde of crucible 6 to change obvious object, on described graphite cover plate 9, be provided with a plurality of through holes 17, by a plurality of through holes 17 are set on graphite cover plate 9, the heat of top heater 11 can be unseparated the through hole 17 that passes through be delivered in crucible 6, the temperature of crucible 6 internal upper parts can be increased for original, thereby the thermograde in crucible 6 is changed obviously, and then the speed of growth of increase ingot casting, this mode only need be beaten several through holes 17 on original graphite cover plate 9, substantially can not increase cost, repacking is also very convenient simultaneously.
Thermal field structure of polycrystalline silicon casting furnace in use, there is sometimes the phenomenon of silicon hydrorrhea stream, once there is silicon hydrorrhea stream, the silicon liquid overflowing can flow on the subiculum warming plate 3 of below along heat exchange platform 12, then silicon liquid drops onto the bottom of body of heater 1 again from the edge of subiculum warming plate 3, because silicon liquid temp is higher, thereby silicon liquid is easy to body of heater 1 to burn accidents caused, silicon liquid for fear of overflow burns body of heater 1, described body of heater 1 bottom is provided with overflow blanket 18, overflow blanket 18 separates the silicon liquid overflowing and body of heater 1, effectively avoided silicon liquid that body of heater 1 is burnt, even if silicon liquid burns overflow blanket 18, now the temperature of silicon liquid is also lower, can not cause too large loss to body of heater 1.In order to prevent that silicon liquid from burning overflow blanket 18, described overflow blanket 18 is four-layer structure, be followed successively by from top to bottom knitting ceramic fiber blanket layer, knitting ceramic fiber blanket layer, ceramic fiber blanket layer, carbon carpet veneer, the thickness of described knitting ceramic fiber blanket layer is that the thickness of 10mm, knitting ceramic fiber blanket layer is that the thickness of 10mm, ceramic fiber blanket layer is that the thickness of 25mm, carbon carpet veneer is 10mm.
For being known in time, operator whether there is silicon hydrorrhea stream, the upper surface of described overflow blanket 18 is provided with overflow silk 19, once there is silicon hydrorrhea stream, the silicon liquid overflowing will blow the overflow silk 19 that is arranged on overflow blanket 18 surfaces after dropping on overflow blanket 18, after overflow silk 19 blows, can send guard signal, alert is carried out relating operation.Because the silicon liquid of overflow is easy to along graphite column 22 to dirty, therefore, in order to monitor quickly the generation of overflow phenomena, between adjacent graphite column 22, be provided with overflow silk 19.Because flowing to the edge that will flow to subiculum warming plate 3 after subiculum warming plate 3, could continue to dirty the silicon liquid of overflow, so just cause overflow phenomena to occur just can monitor after for some time, so just increased the probability having an accident, therefore, for whether monitoring quickly there is silicon hydrorrhea flow phenomenon, on described subiculum warming plate 3, be provided with a plurality of overflow weirs 20, by overflow weir 20 is set on subiculum warming plate 3, after flowing to subiculum warming plate 3, silicon liquid can directly from overflow weir 20, flow to the overflow blanket 18 of below, and then blow being arranged on the overflow silk 19 arranging on overflow blanket 18, thereby reach the object of fast monitored.
In addition, it is more even for crucible 6 is heated, between described crucible 6 and crucible guard boards 7, be provided with carbon felt 21, the heat of sidepiece well heater 10 passes to crucible 6 through carbon felt 21 after seeing through crucible guard boards 7 again, because carbon felt 21 has good heat preservation and insulation, therefore, heat can not see through fast carbon felt 21 and be delivered in crucible 6, can make like this heat obtain homogenizing when seeing through carbon felt 21, thereby crucible 6 is heated evenly, can improve the qualification rate of product.
In order to be better conducive to the volatilization of impurity, described exhaust emissions hole 13 is circular hole, original exhaust emissions hole 13 is square slotted eye, when tail gas is discharged from square slotted eye, the air flow line of tail gas is more at random, irregular, be unfavorable for the volatilization of impurity, changed into after circular hole, can make the air flow line of tail gas regular, thereby be conducive to the volatilization of impurity.
Claims (9)
1. thermal field structure of polycrystalline silicon casting furnace, comprise body of heater (1), on body of heater (1), be provided with aspirating hole (2), in described body of heater (1), be provided with subiculum warming plate (3) and stay-warm case (4), stay-warm case (4) is placed on subiculum warming plate (3), stay-warm case (4) forms heat insulating cage jointly with subiculum warming plate (3), on described stay-warm case (4), be connected with the elevating lever (5) that can make stay-warm case (4) move up and down, in described heat insulating cage, be provided with crucible (6), crucible guard boards (7), graphite base plate (8), graphite cover plate (9), sidepiece well heater (10), top heater (11), heat exchange platform (12), described graphite base plate (8) is placed on heat exchange platform (12), crucible (6) is placed on graphite base plate (8), crucible guard boards (7) is arranged on crucible (6) outside, sidepiece well heater (10) is arranged on the outside of crucible guard boards (7), graphite cover plate (9) is arranged on crucible (6) top, top heater (11) is arranged on graphite cover plate (9) top, described heat exchange platform (12) is fixed on body of heater (1) bottom by graphite column (22), the upper end of crucible guard boards (7) is provided with exhaust emissions hole (13), also comprise inlet pipe (14), described inlet pipe (14) is successively through body of heater (1), stay-warm case (4), top heater (11), after graphite cover plate (9), stretch in crucible (6), it is characterized in that: the distance between the bottom of described sidepiece well heater (10) and graphite base plate (8) upper surface is 13cm～17cm.
2. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 1, is characterized in that: the distance between the bottom of described sidepiece well heater (10) and graphite base plate (8) upper surface is 15cm.
3. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 1 or 2, is characterized in that: on described graphite cover plate (9), be provided with a plurality of through holes (17).
4. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 3, it is characterized in that: described body of heater (1) bottom is provided with overflow blanket (18), described overflow blanket (18) is four-layer structure, be followed successively by from top to bottom knitting ceramic fiber blanket layer, knitting ceramic fiber blanket layer, ceramic fiber blanket layer, carbon carpet veneer, the thickness of described knitting ceramic fiber blanket layer is that the thickness of 10mm, knitting ceramic fiber blanket layer is that the thickness of 10mm, ceramic fiber blanket layer is that the thickness of 25mm, carbon carpet veneer is 10mm.
5. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 4, is characterized in that: the upper surface of described overflow blanket (18) is provided with overflow silk (19).
6. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 5, is characterized in that: between adjacent graphite column (22), be provided with overflow silk (19).
7. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 6, is characterized in that: on described subiculum warming plate (3), be provided with a plurality of overflow weirs (20).
8. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 7, is characterized in that: between described crucible (6) and crucible guard boards (7), be provided with carbon felt (21).
9. thermal field structure of polycrystalline silicon casting furnace as claimed in claim 8, is characterized in that: described exhaust emissions hole (13) is circular hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320715342.2U CN203530490U (en) | 2013-11-14 | 2013-11-14 | Polycrystalline silicon ingot furnace thermal field structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320715342.2U CN203530490U (en) | 2013-11-14 | 2013-11-14 | Polycrystalline silicon ingot furnace thermal field structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203530490U true CN203530490U (en) | 2014-04-09 |
Family
ID=50416720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320715342.2U Expired - Fee Related CN203530490U (en) | 2013-11-14 | 2013-11-14 | Polycrystalline silicon ingot furnace thermal field structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203530490U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164488A (en) * | 2021-12-06 | 2022-03-11 | 晶科能源股份有限公司 | Single crystal furnace and application method |
-
2013
- 2013-11-14 CN CN201320715342.2U patent/CN203530490U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164488A (en) * | 2021-12-06 | 2022-03-11 | 晶科能源股份有限公司 | Single crystal furnace and application method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103541003A (en) | Polysilicon ingot furnace | |
| CN103556220B (en) | Polycrystalline silicon ingot or purifying furnace | |
| CN203530488U (en) | Polycrystalline silicon ingot furnace | |
| CN102877117B (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| CN203530495U (en) | Polycrystalline silicon ingot casting device | |
| KR101139845B1 (en) | A high-throughput apparatus for manufacturing silicon ingots for the polycrystalline silicon solar cell | |
| JPH11310496A (en) | Production of silicon ingot having unidirectionally solidified texture and apparatus therefor | |
| CN202989330U (en) | Novel polycrystalline furnace heating device | |
| CN104195634A (en) | Novel thermal field structure of large-size silicon ingot polycrystal ingot furnace | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN219752142U (en) | Quartz crucible preparation system | |
| CN203530489U (en) | Polycrystalline silicon ingot furnace thermal field structure | |
| CN203530493U (en) | Polycrystalline silicon ingot furnace | |
| CN203530486U (en) | Polycrystalline silicon ingot furnace thermal field structure | |
| CN205188478U (en) | Polysilicon ingot furnace | |
| CN103435043B (en) | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology | |
| CN203530490U (en) | Polycrystalline silicon ingot furnace thermal field structure | |
| CN116288708A (en) | Monocrystalline silicon production device and production method | |
| CN203530496U (en) | Polycrystalline silicon ingot casting device | |
| CN203530491U (en) | Polycrystalline silicon ingot casting device | |
| CN203530492U (en) | Polycrystalline silicon ingot casting furnace | |
| CN102912414B (en) | A kind of polycrystalline silicon ingot or purifying furnace and crucible thereof | |
| CN201138138Y (en) | Polycrystalline silicon segregating and cogging furnace without need of moving component | |
| CN203530485U (en) | Polycrystalline silicon ingot furnace thermal field structure | |
| CN203530476U (en) | Polycrystalline silicon ingot casting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140409 Termination date: 20211114 |