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CN217087875U - A multi-level voltage IO unit and its chip - Google Patents

A multi-level voltage IO unit and its chip Download PDF

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CN217087875U
CN217087875U CN202220636891.XU CN202220636891U CN217087875U CN 217087875 U CN217087875 U CN 217087875U CN 202220636891 U CN202220636891 U CN 202220636891U CN 217087875 U CN217087875 U CN 217087875U
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王春华
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Nanjing Qinheng Microelectronics Co Ltd
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Abstract

本发明公开了一种多级电压IO单元及其芯片,该芯片包含多级电压IO单元,所述多级电压IO单元包括:IO引脚、可编程DAC、第一开关、第二开关、运放及ESD保护电路;可编程DAC的输入端输入控制信号及数据信号,输出端连接运放正输入端;第一模拟开关的第一端连接可编程DAC输出端,第二端连接IO引脚;运放的输出端引出数据信号线,负输入端连接ESD保护电路的输出端,ESD保护电路的输入端连接IO引脚;第二模拟开关的第一端连接运放输出端,第二端连接IO引脚。本实用新型结构简单,芯片面积小,成本低,支持多级电压输入和输出。

Figure 202220636891

The invention discloses a multi-level voltage IO unit and a chip thereof. The chip includes a multi-level voltage IO unit, and the multi-level voltage IO unit includes: an IO pin, a programmable DAC, a first switch, a second switch, a amplifier and ESD protection circuit; the input end of the programmable DAC inputs control signals and data signals, and the output end is connected to the positive input end of the operational amplifier; the first end of the first analog switch is connected to the output end of the programmable DAC, and the second end is connected to the IO pin ; The output terminal of the operational amplifier leads out the data signal line, the negative input terminal is connected to the output terminal of the ESD protection circuit, and the input terminal of the ESD protection circuit is connected to the IO pin; the first terminal of the second analog switch is connected to the operational amplifier output terminal, and the second terminal is connected to the output terminal of the operational amplifier. Connect IO pins. The utility model has the advantages of simple structure, small chip area and low cost, and supports multi-level voltage input and output.

Figure 202220636891

Description

一种多级电压IO单元及其芯片A multi-level voltage IO unit and its chip

技术领域technical field

本实用新型属于集成电路设计领域,尤其涉及一种多级电压IO单元及其芯片。The utility model belongs to the field of integrated circuit design, in particular to a multi-level voltage IO unit and a chip thereof.

背景技术Background technique

数字逻辑芯片和MCU芯片一般使用Foundry厂家(专门生产制造芯片厂家)或第三方IP厂商提供的通用IO单元实现多个IO引脚,用于高电平或低电平的数字信号输入或输出,这种IO引脚的输入状态只有0(低电平)或1(高电平),输出状态也只有0(低电平)或1(高电平)以及三态输出禁止。现有的通用IO单元如图1所示。Digital logic chips and MCU chips generally use general IO units provided by Foundry manufacturers (specialized in manufacturing chip manufacturers) or third-party IP manufacturers to implement multiple IO pins for high-level or low-level digital signal input or output. The input state of this IO pin is only 0 (low level) or 1 (high level), and the output state is only 0 (low level) or 1 (high level) and the tri-state output is disabled. The existing general-purpose IO unit is shown in Figure 1.

使用该通用IO单元存在以下缺陷:一方面,这种通用IO不太适用于多电压多电平的多芯互连的复杂系统。常规解决方法是外加电平转换芯片,导致成本增加,例如将自身的3.3V数字信号通过外置芯片转换成1.8V后再连接目标设备,或反之。另一方面,这种通用IO也不太适用于数模混合芯片及系统,有些外设需要向其提供多种上拉或者下拉电流,有些外设需要MCU向其动态提供多种参考电压,或者感知外设产生的多种信号电压。常规解决方法需要多个电阻、DAC、比较器等,所需元器件较多,成本高,面积较大,不利于IO布局。所以,该方案一直未被数模混合型MCU采用,也一直未在IO单元库中实现。The use of this general-purpose IO unit has the following drawbacks: On the one hand, this general-purpose IO is not suitable for a complex system of multi-voltage and multi-level multi-core interconnection. The conventional solution is to add an external level conversion chip, which leads to increased costs, such as converting its own 3.3V digital signal to 1.8V through an external chip before connecting to the target device, or vice versa. On the other hand, this kind of general-purpose IO is not very suitable for digital-analog hybrid chips and systems. Some peripherals need to provide them with multiple pull-up or pull-down currents, and some peripherals need the MCU to dynamically provide them with multiple reference voltages, or Sensing a variety of signal voltages generated by peripherals. The conventional solution requires multiple resistors, DACs, comparators, etc., which require many components, high cost, and large area, which is not conducive to IO layout. Therefore, this solution has not been adopted by the digital-analog hybrid MCU, nor has it been implemented in the IO unit library.

中国专利CN201910163902.X公开了复用芯片内的可编程DAC实现可编程上拉电阻或可编程下拉电阻的功能,但是未能在IO单元的多级电平输入输出上有所扩展。Chinese patent CN201910163902.X discloses that the programmable DAC in the multiplexing chip realizes the function of programmable pull-up resistor or programmable pull-down resistor, but it fails to expand the multi-level input and output of the IO unit.

发明内容SUMMARY OF THE INVENTION

发明目的:为了解决现有技术中,芯片支持多级电压输入输出而导致电路复杂、元器件多、成本高、不利于商用等问题,本实用新型提供一种多级电压IO单元及其芯片。Purpose of the invention: In order to solve the problems in the prior art that the chip supports multi-level voltage input and output, resulting in complex circuits, many components, high cost, and unfavorable commercial use, the present utility model provides a multi-level voltage IO unit and its chip.

技术方案:一种多级电压IO单元,包括:Technical solution: a multi-level voltage IO unit, including:

IO引脚;IO pin;

可编程DAC,输入端输入控制信号及数据信号,输出端连接运放正输入端;Programmable DAC, the input terminal inputs control signals and data signals, and the output terminal is connected to the positive input terminal of the operational amplifier;

第一模拟开关,第一端连接可编程DAC输出端,第二端连接IO引脚;The first analog switch, the first end is connected to the programmable DAC output end, and the second end is connected to the IO pin;

运放,输出端引出数据信号线,负输入端连接ESD保护电路的输出端,ESD保护电路的输入端连接IO引脚;The operational amplifier, the output terminal leads out the data signal line, the negative input terminal is connected to the output terminal of the ESD protection circuit, and the input terminal of the ESD protection circuit is connected to the IO pin;

第二模拟开关,第一端连接运放输出端,第二端连接IO引脚。For the second analog switch, the first end is connected to the output end of the operational amplifier, and the second end is connected to the IO pin.

进一步地,所述可编程DAC的输入端包括一组数据信号线及至少两根模式控制线,数据信号线输入数据信号,模式控制线输入控制信号。Further, the input end of the programmable DAC includes a set of data signal lines and at least two mode control lines, the data signal lines input data signals, and the mode control lines input control signals.

进一步地,所述运放为轨到轨放大器。Further, the operational amplifier is a rail-to-rail amplifier.

进一步地,还包括电阻,所述电阻的一端连接第一模拟开关的第二端,电阻的另一端连接IO引脚。Further, it also includes a resistor, one end of the resistor is connected to the second end of the first analog switch, and the other end of the resistor is connected to the IO pin.

进一步地,第二模拟开关的第二端连接第一模拟开关的第二端。Further, the second end of the second analog switch is connected to the second end of the first analog switch.

进一步地,还包括模拟信号比较结果数字化模块,所述模拟信号比较结果数字化模块的输入端连接运放输出端,另一端引出数据信号线。Further, it also includes an analog signal comparison result digitizing module, the input end of the analog signal comparison result digitizing module is connected to the output end of the operational amplifier, and the other end leads out the data signal line.

进一步地,所述第二模拟开关嵌入到运放中,第二模拟开关包括第一PMOS管和第一NMOS管,运放输出端包括第二PMOS管和第二NMOS管,第一PMOS管串联在第二PMOS管的漏端或源端,第一NMOS管串联在第二NMOS管的漏端或源端,第一PMOS管及第一NMOS管的栅端连接运放的三态输出控制端。Further, the second analog switch is embedded in the operational amplifier, the second analog switch includes a first PMOS transistor and a first NMOS transistor, the output end of the operational amplifier includes a second PMOS transistor and a second NMOS transistor, and the first PMOS transistors are connected in series At the drain terminal or source terminal of the second PMOS transistor, the first NMOS transistor is connected in series with the drain terminal or source terminal of the second NMOS transistor, and the gate terminals of the first PMOS transistor and the first NMOS transistor are connected to the three-state output control terminal of the operational amplifier .

进一步地,所述第二模拟开关嵌入到运放中,第二模拟开关包括第三PMOS管、第三NMOS管、第一组合开关及第二组合开关;运放输出端包括第二PMOS管和第二NMOS管;第一组合开关及第二组合开关分别连接在第二PMOS管和第二NMOS管的栅端;所述第三PMOS管源端接电源,漏端接第二PMOS管栅端;所述第三NMOS管源端接地,漏端接第二NMOS管栅端。Further, the second analog switch is embedded in the operational amplifier, and the second analog switch includes a third PMOS tube, a third NMOS tube, a first combination switch and a second combination switch; the output end of the operational amplifier includes a second PMOS tube and a second combination switch. The second NMOS transistor; the first combined switch and the second combined switch are respectively connected to the gate terminals of the second PMOS transistor and the second NMOS transistor; the source terminal of the third PMOS transistor is connected to the power supply, and the drain terminal is connected to the gate terminal of the second PMOS transistor ; The source terminal of the third NMOS transistor is grounded, and the drain terminal is connected to the gate terminal of the second NMOS transistor.

进一步地,还包括数字电平输入模块、输出模块中的至少一个;所述数字电平输入模块的输入端连接ESD保护电路的输出端,数字电平输入模块的输出端引出数据信号线;所述输出模块包括输出端、第一输入端及第二输入端,输出端连接IO引脚,第一输入端连接使能输出控制端,第二输入端连接数据信号。Further, it also includes at least one of a digital level input module and an output module; the input end of the digital level input module is connected to the output end of the ESD protection circuit, and the output end of the digital level input module leads out a data signal line; The output module includes an output terminal, a first input terminal and a second input terminal, the output terminal is connected to the IO pin, the first input terminal is connected to the enable output control terminal, and the second input terminal is connected to the data signal.

一种含多级电压IO单元的芯片,包括上述多级电压IO单元及模式控制单元,所述模式控制单元的输出端连接可编程DAC的输入端、第一模拟开关的控制端及第二模拟开关的控制端。A chip containing a multi-level voltage IO unit, including the above-mentioned multi-level voltage IO unit and a mode control unit, the output end of the mode control unit is connected to the input end of the programmable DAC, the control end of the first analog switch and the second analog control terminal of the switch.

本实用新型提供一种多级电压IO单元及其芯片,相比较现有技术,存在以下有益效果:The utility model provides a multi-level voltage IO unit and a chip thereof. Compared with the prior art, the following beneficial effects exist:

(1)结构简单,仅增加一个运放和两个模拟开关,通过一定的连接关系,通过模式组合设计,实现多级电压比较输入和多级电压缓冲输出的功能。(1) The structure is simple, only one op amp and two analog switches are added, and the functions of multi-level voltage comparison input and multi-level voltage buffer output are realized through a certain connection relationship and mode combination design.

(2)采用可编程DAC,复用DAC自身的电阻,结合两个模拟开关的控制,通过逻辑组合实现多级电平输入输出的多种模式。(2) Using a programmable DAC, multiplexing the resistance of the DAC itself, and combining the control of two analog switches, multiple modes of multi-level input and output are realized through logical combination.

(3)复用了在芯片中难以随工艺提升而减小面积的模拟器件,例如复用了在芯片中成本较高、占面积较大的电阻和运放;增加了在芯片中容易随工艺提升而减小面积的数字器件,例如增加了模式组合控制。在实现多级电压输入输出的效果下,尽可能减小芯片增加的面积,降低芯片增加的成本。(3) Multiplexing of analog devices that are difficult to reduce with process improvement in the chip, such as multiplexing of resistors and op amps that cost more and occupy a larger area in the chip; increase the ease of use in the chip. Improved and reduced area digital devices, such as increased mode combination control. Under the effect of realizing multi-level voltage input and output, the increased area of the chip is reduced as much as possible, and the increased cost of the chip is reduced.

(4)支持多级电压输入和输出,无需增加电平转换芯片。可以为模拟型芯片和数模混合型MCU提供多级电压IO单元,适用于数模混合芯片及系统,提升了芯片的性能。(4) Supports multi-level voltage input and output without adding a level conversion chip. It can provide multi-level voltage IO units for analog chips and digital-analog hybrid MCUs, which are suitable for digital-analog hybrid chips and systems, and improve the performance of the chip.

附图说明Description of drawings

图1为现有IO单元的结构示意图;Fig. 1 is the structural representation of existing IO unit;

图2为实施例一多级电压IO单元的结构示意图;2 is a schematic structural diagram of a multi-level voltage IO unit in Embodiment 1;

图3为实施例二嵌入第二模拟开关后的运放结构示意图;3 is a schematic structural diagram of the operational amplifier after the second analog switch is embedded in the second embodiment;

图4为实施例三嵌入第二模拟开关后的运放结构示意图;4 is a schematic diagram of the structure of the operational amplifier after the second analog switch is embedded in the third embodiment;

图5为实施例四多级电压IO单元的结构示意图;5 is a schematic structural diagram of a multi-level voltage IO unit in Embodiment 4;

图6为实施例五多级电压IO单元的结构示意图。FIG. 6 is a schematic structural diagram of a multi-level voltage IO unit according to the fifth embodiment.

具体实施方式Detailed ways

下面结合附图和具体实施例对本发明做进一步解释说明。The present invention will be further explained below with reference to the accompanying drawings and specific embodiments.

实施例一:Example 1:

一种多级电压IO单元,如图2所示,包括IO引脚PAD、可编程DAC、第一模拟开关K1、第二模拟开关K2、运放及ESD保护电路。可编程DAC的输入端输入控制信号及数据信号,输出端连接运放正输入端。第一模拟开关的第一端连接可编程DAC输出端,第二端连接IO引脚。运放的输出端引出数据信号线C0,负输入端连接ESD保护电路的输出端,ESD保护电路的输入端连接IO引脚,该ESD保护电路为二级ESD保护,一般由数百欧的电阻加GGNMOS或GRNMOS构成,此外IO引脚PAD上还连接有一级ESD保护。第二模拟开关的第一端连接运放输出端。A multi-level voltage IO unit, as shown in Figure 2, includes an IO pin PAD, a programmable DAC, a first analog switch K1, a second analog switch K2, an operational amplifier and an ESD protection circuit. The input end of the programmable DAC inputs control signals and data signals, and the output end is connected to the positive input end of the operational amplifier. The first end of the first analog switch is connected to the programmable DAC output end, and the second end is connected to the IO pin. The output terminal of the operational amplifier leads to the data signal line C0, the negative input terminal is connected to the output terminal of the ESD protection circuit, and the input terminal of the ESD protection circuit is connected to the IO pin. It is formed by adding GGNMOS or GRNMOS. In addition, there is also a first-level ESD protection connected to the IO pin PAD. The first end of the second analog switch is connected to the output end of the operational amplifier.

所述可编程DAC的输入端包括一组数据信号线DATA及至少两根模式控制线PUE、PDE,数据信号线输入数据信号,模式控制线输入控制信号,用于控制进入何种模式。The input end of the programmable DAC includes a set of data signal lines DATA and at least two mode control lines PUE and PDE, the data signal lines input data signals, and the mode control lines input control signals for controlling which mode to enter.

所述运放为轨到轨放大器,运放的输入和输出均支持轨到轨,该轨到轨运放支持0到电源电压全范围的输入和输出。The operational amplifier is a rail-to-rail amplifier, the input and output of the operational amplifier both support rail-to-rail, and the rail-to-rail operational amplifier supports input and output from 0 to the full range of power supply voltage.

还可以包括电阻R,所述电阻R的一端连接第一模拟开关的第二端,电阻R的另一端连接IO引脚。所述电阻的阻值一般为数十欧到数百欧,第一模拟开关的MOS器件兼做ESD器件,与电阻R一起兼做运放正输入端的二级ESD保护。如果R阻值较小,第二模拟开关的第二端也可以与第一模拟开关第二端连接,但通常是直接连接至IO引脚。电阻R是可选的,如果运放正输入端已有一定的ESD承受能力,那么电阻R也可以用短接代替。A resistor R may also be included, one end of the resistor R is connected to the second end of the first analog switch, and the other end of the resistor R is connected to the IO pin. The resistance of the resistor is generally tens of ohms to hundreds of ohms. The MOS device of the first analog switch also serves as an ESD device, and together with the resistor R, it also serves as a secondary ESD protection for the positive input end of the operational amplifier. If the resistance value of R is small, the second terminal of the second analog switch can also be connected to the second terminal of the first analog switch, but it is usually directly connected to the IO pin. The resistor R is optional. If the positive input terminal of the op amp has a certain ESD tolerance, the resistor R can also be replaced by a short circuit.

一种含多级电压IO单元的芯片,尤其是数模混合型MCU,包括上述的多级电压IO单元及模式控制单元,所述模式控制单元的输出端连接可编程DAC的输入端、第一模拟开关K1及第二模拟开关K2的控制端。模式控制单元通过组合逻辑输出多种模式控制信号,通过控制可编程DAC、第一模拟开关及第二模拟开关实现多种工作模式,包括DAC直接输出模式、DAC缓冲输出模式、可编程上拉电阻模式、可编程下拉电阻模式及多级电平输入模式。表1举例示意了多种工作模式表对应的一系列组合逻辑,但不限于这一种组合。对于在芯片中难以随工艺提升而降低面积的模拟器件,例如电阻和运放,通过模式组合实现了充分的复用,以较少的器件和有效的连接关系,实现多种功能。A chip containing a multi-level voltage IO unit, especially a digital-analog hybrid MCU, includes the above-mentioned multi-level voltage IO unit and a mode control unit, the output end of the mode control unit is connected to the input end of the programmable DAC, the first The control terminals of the analog switch K1 and the second analog switch K2. The mode control unit outputs various mode control signals through combinational logic, and realizes various working modes by controlling the programmable DAC, the first analog switch and the second analog switch, including DAC direct output mode, DAC buffer output mode, and programmable pull-up resistor. mode, programmable pull-down resistor mode and multi-level input mode. Table 1 illustrates a series of combinational logics corresponding to various working mode tables, but is not limited to this combination. For analog devices whose area is difficult to reduce with process improvement, such as resistors and op amps, sufficient multiplexing is achieved through mode combination, and multiple functions can be realized with fewer devices and effective connection relationships.

表1多种工作模式表Table 1 Various working modes

Figure BDA0003557643450000041
Figure BDA0003557643450000041

Figure BDA0003557643450000051
Figure BDA0003557643450000051

实施例二:Embodiment 2:

实施例二与实施例一的区别在于,实施例二的第二模拟开关嵌入在运放中。如图3所示,第二模拟开关K2包括第一PMOS管P1和第一NMOS管N1,运放输出端包括第二PMOS管P2和第二NMOS管N2,第一PMOS管P1串联在第二PMOS管P2的漏端或源端,第一NMOS管N1串联在第二NMOS管N2的漏端或源端,第一PMOS管P1及第一NMOS管N1的栅端连接运放的三态输出控制端,所述三态输出控制端原用于运放三态输出启用或禁止,现可通过三态输出控制端的启用或禁止信号,实现控制第二模拟开关开启或关闭的效果。为了直观显示第二模拟开关嵌入在运放中的连接关系。图3示出了一种简化的运放结构,实际使用的运放很可能比这种要复杂得多。另外,技术上稍做微调,上述P1和P2也可以交换位置,上述N1和N2可以交换位置,效果相同。如图为当三态输出控制端为开启信号时,等效为第二模拟开关开启,当三态输出控制端为禁止信号时,等效为第二模拟开关关闭。The difference between the second embodiment and the first embodiment is that the second analog switch of the second embodiment is embedded in the operational amplifier. As shown in FIG. 3 , the second analog switch K2 includes a first PMOS transistor P1 and a first NMOS transistor N1, the output end of the operational amplifier includes a second PMOS transistor P2 and a second NMOS transistor N2, and the first PMOS transistor P1 is connected in series with the second PMOS transistor P2 and the second NMOS transistor N2. The drain terminal or source terminal of the PMOS transistor P2, the first NMOS transistor N1 is connected in series with the drain terminal or source terminal of the second NMOS transistor N2, and the gate terminals of the first PMOS transistor P1 and the first NMOS transistor N1 are connected to the three-state output of the operational amplifier The control terminal, the three-state output control terminal was originally used for enabling or disabling the three-state output of the operational amplifier. Now, the effect of controlling the opening or closing of the second analog switch can be realized through the enable or disable signal of the three-state output control terminal. In order to visually display the connection relationship of the second analog switch embedded in the operational amplifier. Figure 3 shows a simplified op amp structure, and an actual op amp is likely to be much more complex. In addition, with a slight technical adjustment, the positions of the above P1 and P2 can also be exchanged, and the positions of the above N1 and N2 can be exchanged, with the same effect. As shown in the figure, when the tri-state output control terminal is an open signal, it is equivalent to turning on the second analog switch, and when the tri-state output control terminal is a prohibiting signal, it is equivalent to turning off the second analog switch.

实施例三:Embodiment three:

实施例三的第二模拟开关也是嵌入在运放中的,与实施例二相比,区别在于,第二模拟开关的结构不同,与运放的连接关系不同。如图4所示,是实施例三将第二模拟开关嵌入在运放中的方式。第二模拟开关包括第三PMOS管P3、第三NMOS管N3及两个组合开关K3;运放输出端包括第二PMOS管P2和第二NMOS管N2;第一组合开关及第二组合开关分别连接在第二PMOS管P2和第二NMOS管N2的栅端;所述第三PMOS管P3源端接电源,漏端接第二PMOS管P2栅端;所述第三NMOS管N3源端接地,漏端接第二NMOS管N2栅端。第一组合开关、第二组合开关均为一对PMOS管和NMOS管构成的组合开关。运放输出端的第二PMOS管P2栅端由第三PMOS管P3和第一组合开关控制,第二NMOS管N2栅端由第三NMOS管N3和第二组合开关控制。开关控制信号如图中swon、swinv所示。当两个组合开关导通时,等效为第二模拟开关打开,运放输出直接连接IO引脚,当第三PMOS管P3、第三NMOS管N3导通时,等效为第二模拟开关断开。The second analog switch in the third embodiment is also embedded in the operational amplifier. Compared with the second embodiment, the difference lies in that the structure of the second analog switch is different, and the connection relationship with the operational amplifier is different. As shown in FIG. 4 , it is the way in which the second analog switch is embedded in the operational amplifier in the third embodiment. The second analog switch includes a third PMOS transistor P3, a third NMOS transistor N3 and two combination switches K3; the output end of the operational amplifier includes a second PMOS transistor P2 and a second NMOS transistor N2; the first combination switch and the second combination switch respectively connected to the gate terminal of the second PMOS transistor P2 and the second NMOS transistor N2; the source terminal of the third PMOS transistor P3 is connected to the power supply, and the drain terminal is connected to the gate terminal of the second PMOS transistor P2; the source terminal of the third NMOS transistor N3 is grounded , the drain terminal is connected to the gate terminal of the second NMOS transistor N2. The first combination switch and the second combination switch are both combination switches composed of a pair of PMOS transistors and NMOS transistors. The gate terminal of the second PMOS transistor P2 at the output end of the operational amplifier is controlled by the third PMOS transistor P3 and the first combined switch, and the gate terminal of the second NMOS transistor N2 is controlled by the third NMOS transistor N3 and the second combined switch. The switch control signal is shown as swon and swinv in the figure. When the two combined switches are turned on, it is equivalent to turning on the second analog switch, and the output of the operational amplifier is directly connected to the IO pin. When the third PMOS transistor P3 and the third NMOS transistor N3 are turned on, it is equivalent to the second analog switch. disconnect.

这种方式虽然需要更多器件,但所加MOS器件所通过的电流小,故器件尺寸较小。Although this method requires more devices, the current passing through the added MOS device is small, so the device size is small.

对于嵌入第二模拟开关后的运放,CO可以由运放的另一不含三态控制的镜像输出端产生,或者从多级运放的前一级引出。For the op amp embedded with the second analog switch, CO can be generated by another mirror output terminal of the op amp without tri-state control, or it can be derived from the previous stage of the multi-stage op amp.

实施例四:Embodiment 4:

实施例四与实施例一相比,增加了模拟信号比较结果数字化模块,其输入端连接运放的输出端,另一端引出数据信号线,如图5所示。所述模拟信号比较结果数字化模块可以由若干级反相器实现,或者由level shift模块实现。运放将正负输入端电压进行比较,运放输出端的信号产生比较结果,要么低电平要么高电平,理论上可以直接作为数字信号使用,但为了更好的数字电平匹配效果,例如运放工作于3.3V,而数字内核或模式控制单元希望信号电平1.2V,那么可以加上模拟信号比较结果数字化模块,以实现更好的数字化匹配效果。Compared with the first embodiment, the fourth embodiment adds an analog signal comparison result digitizing module, whose input end is connected to the output end of the operational amplifier, and the other end leads out a data signal line, as shown in FIG. 5 . The analog signal comparison result digitizing module can be implemented by several stages of inverters, or implemented by a level shift module. The op amp compares the voltages of the positive and negative input terminals, and the signal at the output terminal of the op amp produces a comparison result, either low level or high level. In theory, it can be used directly as a digital signal, but for better digital level matching effect, for example The operational amplifier works at 3.3V, and the digital core or the mode control unit expects the signal level to be 1.2V, then the analog signal comparison result digitization module can be added to achieve better digital matching effect.

实施例五:Embodiment 5:

实施例五在实施例一或实施例二或实施例三或实施例四的基础上,增加了数字电平输入模块和输出模块,也可以单独只增加其一。The fifth embodiment adds a digital level input module and an output module on the basis of the first embodiment or the second embodiment or the third embodiment or the fourth embodiment, or only one of them may be added independently.

如图6所示,所述数字电平输入模块的输入端连接二级ESD保护电路的输出端,数字电平输入模块的输出端引出数据信号线,实现单一数字电平输入,用于兼容现有通用IO单元。As shown in FIG. 6 , the input end of the digital level input module is connected to the output end of the secondary ESD protection circuit, and the output end of the digital level input module leads out a data signal line to realize a single digital level input, which is used for compatibility with current There are general purpose IO units.

所述输出模块包括输出端、第一输入端及第二输入端,输出端连接IO引脚,第一输入端连接使能输出控制端(选择是否使用单一数字电平输出),第二输入端连接输出数据信号,实现单一数字电平输出,用于兼容现有通用IO单元。The output module includes an output end, a first input end and a second input end, the output end is connected to the IO pin, the first input end is connected to the enable output control end (select whether to use a single digital level output), and the second input end Connect the output data signal to achieve a single digital level output, which is compatible with existing general-purpose IO units.

实施例四可与现有通用IO单元的功能兼容,实现更高速的单一数字电平输入和输出,其输出模块的MOS器件还可以兼做一级ESD保护器件。The fourth embodiment can be compatible with the functions of the existing general-purpose IO unit, realize higher-speed single digital level input and output, and the MOS device of the output module can also serve as a first-level ESD protection device.

Claims (10)

1.一种多级电压IO单元,其特征在于,包括:1. a multi-level voltage IO unit, is characterized in that, comprises: IO引脚;IO pin; 可编程DAC,输入端输入控制信号及数据信号,输出端连接运放正输入端;Programmable DAC, the input terminal inputs control signals and data signals, and the output terminal is connected to the positive input terminal of the operational amplifier; 第一模拟开关,第一端连接可编程DAC输出端,第二端连接IO引脚;The first analog switch, the first end is connected to the programmable DAC output end, and the second end is connected to the IO pin; 运放,输出端引出数据信号线,负输入端连接ESD保护电路的输出端,ESD保护电路的输入端连接IO引脚;The operational amplifier, the output terminal leads out the data signal line, the negative input terminal is connected to the output terminal of the ESD protection circuit, and the input terminal of the ESD protection circuit is connected to the IO pin; 第二模拟开关,第一端连接运放输出端,第二端连接IO引脚。For the second analog switch, the first end is connected to the output end of the operational amplifier, and the second end is connected to the IO pin. 2.根据权利要求1所述的多级电压IO单元,其特征在于,所述可编程DAC的输入端包括一组数据信号线及至少两根模式控制线,数据信号线输入数据信号,模式控制线输入控制信号。2. The multi-level voltage IO unit according to claim 1, wherein the input end of the programmable DAC comprises a group of data signal lines and at least two mode control lines, the data signal lines input data signals, and the mode controls Line input control signal. 3.根据权利要求1或2所述的多级电压IO单元,其特征在于,所述运放为轨到轨放大器。3. The multi-level voltage IO unit according to claim 1 or 2, wherein the operational amplifier is a rail-to-rail amplifier. 4.根据权利要求1或2所述的多级电压IO单元,其特征在于,还包括电阻,所述电阻的一端连接第一模拟开关的第二端,电阻的另一端连接IO引脚。4. The multi-level voltage IO unit according to claim 1 or 2, further comprising a resistor, one end of the resistor is connected to the second end of the first analog switch, and the other end of the resistor is connected to the IO pin. 5.根据权利要求4所述的多级电压IO单元,其特征在于,第二模拟开关的第二端连接第一模拟开关的第二端。5. The multi-level voltage IO unit according to claim 4, wherein the second end of the second analog switch is connected to the second end of the first analog switch. 6.根据权利要求1或2所述的多级电压IO单元,其特征在于,还包括模拟信号比较结果数字化模块,所述模拟信号比较结果数字化模块的输入端连接运放输出端,另一端引出数据信号线。6. The multi-level voltage IO unit according to claim 1 or 2, further comprising an analog signal comparison result digitizing module, the input end of the analog signal comparison result digitizing module is connected to the operational amplifier output end, and the other end leads out data signal line. 7.根据权利要求1或2所述的多级电压IO单元,其特征在于,所述第二模拟开关嵌入到运放中,第二模拟开关包括第一PMOS管和第一NMOS管,运放输出端包括第二PMOS管和第二NMOS管,第一PMOS管串联在第二PMOS管的漏端或源端,第一NMOS管串联在第二NMOS管的漏端或源端,第一PMOS管及第一NMOS管的栅端连接运放的三态输出控制端。7. The multi-level voltage IO unit according to claim 1 or 2, wherein the second analog switch is embedded in an operational amplifier, the second analog switch comprises a first PMOS transistor and a first NMOS transistor, and the operational amplifier The output end includes a second PMOS transistor and a second NMOS transistor. The first PMOS transistor is connected in series with the drain or source end of the second PMOS transistor, and the first NMOS transistor is connected in series with the drain or source end of the second NMOS transistor. The transistor and the gate terminal of the first NMOS transistor are connected to the three-state output control terminal of the operational amplifier. 8.根据权利要求1或2所述的多级电压IO单元,其特征在于,所述第二模拟开关嵌入到运放中,第二模拟开关包括第三PMOS管、第三NMOS管、第一组合开关及第二组合开关;运放输出端包括第二PMOS管和第二NMOS管;第一组合开关及第二组合开关分别连接在第二PMOS管和第二NMOS管的栅端;所述第三PMOS管源端接电源,漏端接第二PMOS管栅端;所述第三NMOS管源端接地,漏端接第二NMOS管栅端。8. The multi-level voltage IO unit according to claim 1 or 2, wherein the second analog switch is embedded in an operational amplifier, and the second analog switch comprises a third PMOS transistor, a third NMOS transistor, a first a combination switch and a second combination switch; the output end of the operational amplifier includes a second PMOS tube and a second NMOS tube; the first combination switch and the second combination switch are respectively connected to the gate ends of the second PMOS tube and the second NMOS tube; the The source terminal of the third PMOS tube is connected to the power supply, and the drain terminal is connected to the gate terminal of the second PMOS tube; the source terminal of the third NMOS tube is grounded, and the drain terminal is connected to the gate terminal of the second NMOS tube. 9.根据权利要求1或2所述的多级电压IO单元,其特征在于,还包括数字电平输入模块、输出模块中的至少一个;9. The multi-level voltage IO unit according to claim 1 or 2, further comprising at least one of a digital level input module and an output module; 所述数字电平输入模块的输入端连接ESD保护电路的输出端,数字电平输入模块的输出端引出数据信号线;The input end of the digital level input module is connected to the output end of the ESD protection circuit, and the output end of the digital level input module leads out a data signal line; 所述输出模块包括输出端、第一输入端及第二输入端,输出端连接IO引脚,第一输入端连接使能输出控制端,第二输入端连接数据信号。The output module includes an output terminal, a first input terminal and a second input terminal. The output terminal is connected to an IO pin, the first input terminal is connected to an enable output control terminal, and the second input terminal is connected to a data signal. 10.一种含多级电压IO单元的芯片,其特征在于,包括如权利要求1至9任一所述的多级电压IO单元及模式控制单元,所述模式控制单元的输出端连接可编程DAC的输入端、第一模拟开关的控制端及第二模拟开关的控制端。10. A chip containing a multi-level voltage IO unit, characterized in that it comprises the multi-level voltage IO unit and a mode control unit according to any one of claims 1 to 9, the output end of the mode control unit is connected to a programmable The input end of the DAC, the control end of the first analog switch and the control end of the second analog switch.
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Publication number Priority date Publication date Assignee Title
CN117555843A (en) * 2024-01-09 2024-02-13 凌思微电子(杭州)有限公司 IO interface circuit and chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117555843A (en) * 2024-01-09 2024-02-13 凌思微电子(杭州)有限公司 IO interface circuit and chip
CN117555843B (en) * 2024-01-09 2024-04-09 凌思微电子(杭州)有限公司 IO interface circuit and chip

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