CN210042406U - Embedded substrate and electronic equipment - Google Patents
Embedded substrate and electronic equipment Download PDFInfo
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- CN210042406U CN210042406U CN201920614945.0U CN201920614945U CN210042406U CN 210042406 U CN210042406 U CN 210042406U CN 201920614945 U CN201920614945 U CN 201920614945U CN 210042406 U CN210042406 U CN 210042406U
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- Prior art keywords
- substrate
- embedded
- functional portion
- embedded device
- layer
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- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 239000003990 capacitor Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000007772 electrode material Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The utility model relates to an embedded base plate and electronic equipment. The embedded substrate comprises a substrate main body with a plurality of structural layers and a plurality of embedded devices embedded in the substrate main body; the embedded device at least comprises one of a resistor, a capacitor or an inductor, the embedded device is provided with a substrate capable of being thinned, and the embedded device is arranged on the same layer inside the base plate main body and is multiple in thickness. The utility model discloses at embedded base plate easy production more when the production preparation.
Description
Technical Field
The utility model belongs to the technical field of the electron, more specifically, the utility model relates to an embedded base plate and electronic equipment.
Background
The substrate is a basic material for manufacturing the PCB, generally, the substrate is a copper clad laminate, and the single-sided and double-sided printed boards are manufactured by selectively performing processes such as hole processing, chemical copper plating, electro-coppering, etching and the like on the substrate material copper clad laminate to obtain a desired circuit pattern. In the manufacture of another type of multilayer printed board, an inner core thin copper clad laminate is also used as a base, and the conductive pattern layers and the prepregs are alternately laminated and bonded together at one time to form interconnection among more than 3 conductive pattern layers. It has the functions of conducting electricity, insulating and supporting. The performance, quality, workability in manufacturing, manufacturing cost, manufacturing level, and the like of the printed board greatly depend on the substrate material.
In the prior art, an embedded substrate refers to a substrate with devices embedded therein, and the embedded devices are usually embedded in an inner layer manufacturing procedure of the substrate, and required link signal pins are connected to an outer layer along with a lead process of the substrate, so that the internal space of the substrate can be utilized to the maximum extent, and a plurality of devices can be packaged in a packaging and integrating unit area; and the substrate lead and the metal lamination can be utilized to carry out electromagnetic shielding, but the embedded devices have different thicknesses due to more types, so that the implementation difficulty of the process for manufacturing the embedded substrate is increased, and the production efficiency and the yield are influenced.
Accordingly, there is a need for an improved damascene substrate.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a new technical scheme of embedded base plate.
According to an aspect of the present invention, an embedded substrate is provided, which includes a substrate main body having a plurality of structure layers, and a plurality of embedded devices embedded in the substrate main body; the embedded device at least comprises one of a resistor, a capacitor or an inductor, the embedded device is provided with a substrate capable of being thinned, and the embedded device is arranged on the same layer inside the base plate main body and is multiple in thickness.
Optionally, the embedded device further includes an insulating layer disposed on the substrate for insulation, and a functional portion disposed on the insulating layer for implementing an electrical function of the embedded device.
Optionally, at least two of the plurality of embedded devices have different thicknesses of the functional portion.
Optionally, the functional portion of the resistor is a patterned resistor material layer.
Optionally, the functional portion of the capacitor is a lower electrode material layer, a dielectric layer, and an upper electrode material layer, which are sequentially disposed on the insulating layer in a direction away from the insulating layer.
Optionally, the functional part of the inductor is a patterned inductor material layer.
Optionally, the embedded device further includes a protection layer for encapsulating the functional portion, and a metal electrode exposed outside the protection layer for electrically connecting the functional portion to the outside.
Optionally, a circuit is disposed on the substrate main body, and the embedded device is electrically connected to the circuit on the substrate main body through the metal electrode.
Optionally, the embedded device further comprises a chip.
According to another aspect of the present invention, the present invention also provides an electronic device, including the above-mentioned embedded substrate.
According to the utility model discloses an aspect, the utility model discloses at embedded base plate easy to produce more when the production preparation.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic cross-sectional structure of some embodiments of the present invention.
Fig. 2 is a schematic cross-sectional structure diagram of a resistor according to some embodiments of the present invention.
Fig. 3 is a schematic cross-sectional structure diagram of a capacitor according to some embodiments of the present invention.
Fig. 4 is a schematic cross-sectional structural diagram of an inductor according to some embodiments of the present invention.
Fig. 5 is a schematic top view of an inductor according to some embodiments of the present invention.
In the figure: the chip comprises a substrate body 1, an embedded device 2, a substrate 21, an insulating layer 22, a protective layer 23, a metal electrode 24, a resistor 3, a resistor material layer 31, a capacitor 4, an electrode material layer 41, a dielectric layer 42, an electrode material layer 43, an inductor 5, an inductor material layer 51 and a chip 6.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: unless specifically stated otherwise, the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but are intended to be considered a part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
According to an aspect of the present invention, an embedded substrate is provided, in some embodiments, with reference to fig. 1 to 5, including a substrate body 1 and a plurality of embedded devices 2 buried in the substrate body 1. The substrate body 1 is a multilayer composite structure having a plurality of structural layers. The substrate body 1 may be rigid or flexible, which is not limited by the present invention.
The embedded device 2 may include an active embedded device and a passive embedded device. The active embedded device typically includes a chip 6. The passive embedded device typically comprises a resistor 3, a capacitor 4 and an inductor 5. The utility model provides a plurality of embedded devices 2 can be same kind of device, also can be the device of multiple difference, the utility model discloses do not restrict to this, and the setting can be selected as required to the technical staff in the field. The sizes of the external dimensions of different devices and the dimensions of the structural parts for realizing the electrical functions are different, so that the thicknesses of the devices are different; even if the devices are of the same type, the size of the devices is different according to the strength of the electrical functions of the devices, so that the thickness of the devices is often different.
The plurality of embedded devices 2 are embedded in the same layer inside the substrate body 1, and the plurality of embedded devices 2 can be provided with equal thickness. Referring to fig. 1 to 4, the embedded device 2 has a substrate 21 that can be thinned. For example, the substrate 21 may be a silicon substrate made of a single crystal silicon wafer, so that it can be thinned by, for example, grinding or the like. Embedded device 2 has substrate 21 that can the attenuate for a plurality of different embedded devices 2 are through attenuate substrate 21 before burying base plate main part 1, thereby can change embedded device 2's thickness, make own thickness keep unanimous with the whole thickness of a plurality of different embedded devices 2 of different, make the utility model discloses a processing is changeed and is gone on. In other embodiments, the substrate 21 may be a substrate such as sapphire or silicon carbide, and may be thinned by processing, and the present invention is not limited to the type of the substrate.
The utility model discloses a substrate adds man-hour, the thickness of the embedded device 2 of a plurality of differences can remain unanimous, compares in the thickness inconsistency of the embedded device 2 of a plurality of differences, buries the embedded base plate of multilayer composite structure with the embedded device 2 of thickness unanimity, and the technology degree of difficulty of the embedded base plate processing of layer composite structure can reduce to some extent, implements more easily, makes the utility model discloses produce more easily when embedded base plate is producing the preparation to production efficiency and yields in can effectual improvement base plate production man-hour.
In some embodiments, referring to fig. 1-4, the passive embedded devices, such as the resistor 3, the capacitor 4, and the inductor 5, further include an insulating layer 22 disposed on the substrate 21, and the insulating layer 22 may be disposed on the substrate 21 by oxidation or deposition. For example, silicon dioxide formed on a silicon substrate is oxidized, and the silicon dioxide can serve as an insulating layer. A functional part for realizing the function of the device is also arranged on the insulating layer 22, and the functional part can be formed by selectively removing certain parts of materials by etching the pattern formed on the electric material layer on the insulating layer; such as photolithography, a method of transferring an image in a photographic process using ultraviolet light and a template or mask, and a method of copying a circuit pattern to the surface of an insulating layer. The corresponding processing method in the prior art can be selected by those skilled in the art according to production needs, and will not be described herein.
Referring to fig. 2, the functional portion of the resistor 3 is a patterned resistor layer 31. The resistive material layer 31 may be formed by depositing a resistive material on the insulating layer 22 and then patterning by photolithography. The resistance material can be high-resistance metal or polysilicon, and the like which are commonly used in the prior art.
Referring to fig. 3, the functional part of the capacitor 4 is a lower electrode material layer 41, a dielectric layer 42 and an upper electrode material layer 43 which are sequentially disposed on the insulating layer 22 in a direction away from the insulating layer 22. The lower electrode material layer 41 may be formed by depositing an electrode material on the insulating layer 22 and then patterning by photolithography, and then sequentially depositing a dielectric layer 42 and an upper electrode material layer 43 on the lower electrode material layer 41.
Referring to fig. 4 and 5, the functional portion of the inductor 5 is a patterned inductor material layer 51. The inductance material layer 51 may be formed by depositing an inductance material on the insulating layer 22 and then patterning by photolithography. The inductor material may be a low resistance metal or other inductor material commonly used in the art.
Referring to fig. 2 to 4, the structure of its function portion that realizes the electricity function of the embedded device of difference is different for the thickness of the function portion of the embedded device of difference often is different, the utility model discloses an adjustment to the thickness of substrate can realize that its thickness in the embedded base plate is the same, the processing of being convenient for under the prerequisite of guaranteeing its electricity function.
In some embodiments, referring to fig. 1-4, passive embedded devices such as resistor 3, capacitor 4, and inductor 5 further include a protective layer 23 and a metal electrode 24. The protective layer 23 is used to encapsulate the functional portion on the insulating layer 22, and protect the functional portion from damage. The metal electrode 24 is exposed outside the protective layer 23 for external electrical connection of the functional part, thereby realizing the electrical function of the passive embedded device such as the resistor 3, the capacitor 4 and the inductor 5 in the embedded substrate.
In some embodiments, the surface and the inside of the substrate body 1 are also provided with circuits, and the resistor, the capacitor or/and the inductor are electrically connected with the circuits on the substrate body 1 through the metal electrodes 24 to realize the electrical functions of the devices in the circuits.
In some embodiments, the metal electrodes 24 are exposed upwards, and the heights of the metal electrodes 24 of the embedded devices 2 arranged in the same thickness are consistent, so that the arrangement of circuits is facilitated, and the process is simplified.
According to another aspect of the present application, the present application also provides an electronic device including the embedded substrate described above.
In some embodiments, the electronic device may be a laptop, a mobile phone, a tablet computer, or the like.
Although some specific embodiments of the present invention have been described in detail by way of illustration, it should be understood by those skilled in the art that the above illustration is only for purposes of illustration and is not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. An embedded substrate is characterized by comprising a substrate main body with a plurality of structural layers and a plurality of embedded devices embedded in the substrate main body; the embedded device at least comprises one of a resistor, a capacitor or an inductor, the embedded device is provided with a substrate capable of being thinned, and the embedded device is arranged on the same layer inside the base plate main body and is multiple in thickness.
2. The embedded substrate of claim 1, wherein the embedded device further comprises an insulating layer disposed on the substrate for insulation and a functional portion disposed on the insulating layer for implementing an electrical function of the embedded device.
3. The interposer substrate of claim 2, wherein at least two of the embedded devices have different functional portion thicknesses.
4. The damascene substrate of claim 2, wherein the functional portion of the resistor is a patterned resistor material layer.
5. The damascene substrate of claim 2, wherein the functional portion of the capacitor is a lower electrode material layer, a dielectric layer and an upper electrode material layer sequentially disposed on the insulating layer in a direction away from the insulating layer.
6. The embedded substrate of claim 2, wherein the functional portion of the inductor is a patterned inductor material layer.
7. The embedded substrate of claim 2, wherein the embedded device further comprises a protective layer for encapsulating the functional portion, and a metal electrode exposed outside the protective layer for external electrical connection of the functional portion.
8. The damascene substrate of claim 7, wherein the substrate body has circuitry disposed thereon, and the embedded device is electrically connected to the circuitry on the substrate body through the metal electrode.
9. The embedded substrate of claim 1, wherein the embedded device further comprises a chip.
10. An electronic device comprising the embedded substrate according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920614945.0U CN210042406U (en) | 2019-04-30 | 2019-04-30 | Embedded substrate and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920614945.0U CN210042406U (en) | 2019-04-30 | 2019-04-30 | Embedded substrate and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210042406U true CN210042406U (en) | 2020-02-07 |
Family
ID=69362970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920614945.0U Active CN210042406U (en) | 2019-04-30 | 2019-04-30 | Embedded substrate and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210042406U (en) |
-
2019
- 2019-04-30 CN CN201920614945.0U patent/CN210042406U/en active Active
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