CN221175882U - Resistor structure - Google Patents

Abstract

The utility model relates to the technical field of electronic elements, in particular to a resistor structure, which comprises: a substrate; the first electrode layer is positioned at four vertex angles of the electrode region of the substrate and is connected with the metal layer; the metal layer and the first electrode layer at the base electrode region are covered with the second electrode layer. In the utility model, the first electrode layer is directly arranged on the substrate, is positioned at the four vertex angles of the substrate electrode region and is connected with the metal layer, and then the second electrode layer is covered on the metal layer and the first electrode layer of the substrate electrode region, so that the thickness of the resistor element is reduced under the condition that the volume of the resistor element electrode is unchanged.

Description

Resistor structure

Technical Field

The present disclosure relates to electronic devices, and particularly to a resistor structure.

Background

At present, the trend of electronic devices is toward light and thin electronic devices. This is due to the increasing demands placed on volume and weight by modern devices, while more and more applications require the integration of electronic components in smaller spaces.

In electronic components, precision resistors are a common component composed of a resistor alloy and electrodes. The electrodes are typically copper and are nickel and tin plated to facilitate subsequent soldering. In order to meet the demand of light and thin, the thickness of the device can be reduced by keeping the volume of the electrode unchanged based on the conventional device design, and the device has the same characteristics as the original device, which is a problem to be solved.

The foregoing is provided merely for the purpose of facilitating understanding of the technical solutions of the present utility model and is not intended to represent an admission that the foregoing is prior art.

Disclosure of utility model

The utility model mainly aims to provide a resistor structure, which aims to solve the technical problem of how to reduce the thickness of a resistor element under the condition that the volume of an electrode of the resistor element is unchanged in the prior art.

To achieve the above object, the present utility model proposes a resistor structure including:

A substrate;

The first electrode layer is positioned at four vertex angles of the substrate electrode zone and is connected with the metal layer;

And the metal layer positioned in the base electrode region and the first electrode layer are covered with a second electrode layer.

Optionally, the substrate electrode region includes a first electrode region and a second electrode region, which are respectively located at two sides of the substrate non-electrode region and are connected with the substrate non-electrode region;

The first electrode layer is positioned at four vertex angles of the first electrode region and the second electrode region and is connected with the metal layer.

Optionally, the first electrode layers are uniformly distributed at four vertexes of the first electrode region and the second electrode region at preset intervals and are connected with the metal layer.

Optionally, the thickness of the first electrode layer is equal to the thickness of the metal layer.

Optionally, the resistor structure further includes: a first insulating layer;

The first insulating layer covers the upper surface of the metal layer in the non-electrode region of the substrate.

Optionally, the sum of the thicknesses of the first electrode layer and the second electrode layer is greater than the sum of the thicknesses of the metal layer and the first insulating layer.

Optionally, the resistor structure further includes a contact layer disposed on the substrate, and the metal layer is disposed on the contact layer.

Optionally, a second insulating layer is further disposed on the first insulating layer.

Optionally, the first insulating layer and the second insulating layer are composed of an organic material, an inorganic material, or a combination of an organic material and an inorganic material.

Optionally, the sum of thicknesses of the metal layer, the first insulating layer, and the second insulating layer is equal to or less than the sum of thicknesses of the first electrode layer and the second electrode layer.

The present utility model provides a resistor structure comprising: a substrate; the first electrode layer is positioned at four vertex angles of the substrate electrode zone and is connected with the metal layer; and the metal layer positioned in the base electrode region and the first electrode layer are covered with a second electrode layer. In the utility model, the first electrode layer is directly arranged on the substrate, is positioned at the four vertex angles of the substrate electrode region and is connected with the metal layer, and then the second electrode layer is covered on the metal layer and the first electrode layer of the substrate electrode region, so that the thickness of the resistor element is reduced under the condition that the volume of the resistor element electrode is unchanged.

Drawings

In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of a first electrode layer in a first embodiment of a resistor structure according to the present utility model;

FIG. 2 is a top view of a first electrode layer of a first embodiment of a resistor structure according to the present utility model;

FIG. 3 is a schematic diagram of a resistor structure according to a first embodiment of the present utility model;

FIG. 4 is a top view of a first embodiment of a resistor structure according to the present utility model;

FIG. 5 is a schematic diagram of a resistor structure according to a third embodiment of the present utility model;

Fig. 6 is a top view of a third embodiment of a resistor structure according to the present utility model.

Reference numerals illustrate:

Reference numerals	Name of the name	Reference numerals	Name of the name
				1	Substrate	2	Contact layer
3	Metal layer	4	A first insulating layer
				51	A first electrode layer	52	A second electrode layer
6	Second insulating layer

The achievement of the objects, functional features and advantages of the present utility model will be further described with reference to the accompanying drawings, in conjunction with the embodiments.

Detailed Description

It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.

The following description of the embodiments of the present utility model will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present utility model are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.

Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the technical solutions should be considered that the combination does not exist and is not within the scope of protection claimed by the present utility model.

Referring to fig. 1 to 4, fig. 1 is a schematic structural diagram of a first electrode layer 51 in a first embodiment of a resistor structure according to the present utility model; fig. 2 is a top view of a first electrode layer 51 in a first embodiment of a resistor structure according to the present utility model; FIG. 3 is a schematic diagram of a resistor structure according to a first embodiment of the present utility model; fig. 4 is a top view of a first embodiment of a resistor structure according to the present utility model. A first embodiment of the resistor structure of the present utility model is presented based on fig. 1 to 4.

In this embodiment, the resistor structure includes: a substrate 1;

a metal layer 3 and a first electrode layer 51 disposed on the substrate 1, the first electrode layer 51 being at four corners of the electrode region of the substrate 1 and connected to the metal layer 3;

The metal layer 3 and said first electrode layer 51 in the electrode area of the substrate 1 are covered with a second electrode layer 52.

It will be appreciated that the substrate 1 is the bottom for carrying the entire resistive structure. The substrate 1 may be composed of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, such as a ceramic substrate, a glass fiber substrate, or the like.

The resistor structure further comprises a contact layer 2 arranged on the substrate 1, the metal layer 3 being arranged on the contact layer 2. The contact layer 2 may be used to fix the metal layer 3 to the substrate 1, and the metal layer 3 may not be directly provided on the substrate 1 without providing the contact layer 2. For example, when it is desired to place the metal on the glass plate, a certain amount of glue may be used, which glue is the contact layer 2 between the metal and the glass plate. The contact layer 2 can be made of epoxy or subcritical materials, and the like, so that the metal layer 3 and the substrate 1 can be better adhered.

It will be appreciated that the metal layer 3 is a conductive structure layer, and that the specific resistance value of the resistive structure is directly related to the dimensions and constituent materials of the metal layer 3. The material constituting the metal layer 3 has a certain resistivity, so that the resistive structure exhibits resistivity. The metal layer 3 may be composed of a pure metal or a metal alloy, for example, a pure metal material such as copper, silver, gold, or an alloy of materials including copper, silver, manganese, gold, or the like.

In this embodiment, the substrate 1 includes an electrode region and a non-electrode region, the electrode region being a region for connecting electrode leads to connect the resistive structure with other components. Wherein by providing the first electrode layer 51 on the substrate 1, it is possible to effectively utilize the space of the substrate 1 and arrange the positions of the electrodes at the four top corners of the electrode region of the substrate 1. This arrangement minimizes the size of the resistive element. Furthermore, the connection of the first electrode layer 51 to the metal layer 3 can also provide stable electrical signal transmission. By covering the second electrode layer 52 on the metal layer 3 and the first electrode layer 51 of the electrode region of the substrate 1, the thickness of the resistive element can be further reduced. Such a covering can be achieved by micro-machining techniques and thin film deposition processes, ensuring the function and performance of the resistive element. In addition, the coverage of the second electrode layer 52 also increases the contact area of the electrode layer and the metal region. This is important for current transfer and stability of the resistive element, as a larger contact area may provide lower resistance and more stable electrical signal transfer. The first electrode layer 51 and the second electrode layer 52 may be composed of a pure metal material or an alloy material, and the constituent materials of the electrode layers may be the same as the constituent materials of the metal layer 3.

It should be understood that the electrode layers include a first electrode layer 51 and a second electrode layer 52, wherein the first electrode layer 51 is disposed at four top corners of the electrode region of the substrate 1 and is connected to the metal layer 3, and the second electrode layer 52 is disposed on the metal layer 3 of the electrode region of the substrate 1 and the upper surface of the first electrode layer 51, and in a specific disposition process, four grooves connected to the first electrode layer 51 may be defined at the four top corners of the metal layer 3 of the electrode region of the substrate 1 by using a laser or etching method or the like, and the upper surface of the remaining portion of the metal layer 3 where the grooves are not disposed is covered with the first insulating layer 4, and the placement of the first insulating layer 4 may protect the metal layer 3 from bad contact while providing a flat surface for a subsequent plating process to ensure reliability and performance of the resistive structure. Then, the first electrode layer 51 is disposed at four top corners of the electrode region of the substrate 1 by means of plating, and finally, the first insulating layer 4 on the metal layer of the electrode region of the substrate 1 is removed, and the plating treatment is performed on the whole electrode region of the substrate 1, that is, the metal layer 3 of the electrode region of the substrate 1 and the first electrode layer 51 are covered with the second electrode layer 52, and the metal layer 3 of the electrode region of the substrate 1 is exposed by removing the first insulating layer 4 on the metal layer 3 of the electrode region of the substrate 1. The plating process may be performed over the entire electrode area to form the second electrode layer 52 on the electrode area, thereby providing good electrical connection and conductivity.

In order to prevent the change in the resistance value of the resistive structure due to the influence of oxidation, passivation, and the like on the structure of the metal layer 3 by the process of oxidizing gas, nitriding gas, and the like in the external environment, it is necessary to provide the first insulating layer 4 on the upper surface of the metal layer 3 in the non-electrode region of the substrate 1. The first insulating layer 4 can effectively isolate the metal layer 3 from the external environment, so that the metal layer 3 is prevented from being influenced by the external environment, and the metal layer 3 is protected. The first insulating layer 4 may be made of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, where the organic material may be a solder resist ink, the inorganic material may be silicon dioxide, gallium nitride, aluminum nitride, or the like, and the mixed material may be an organic material and an inorganic material that are stacked, for example, a layer of silicon dioxide is provided on the solder resist ink, or a layer of solder resist ink is provided on the silicon dioxide.

The present embodiment provides a resistor structure including: a substrate 1; a metal layer 3 and a first electrode layer 51 disposed on the substrate 1, the first electrode layer 51 being at four corners of the electrode region of the substrate 1 and connected to the metal layer 3; the metal layer 3 and said first electrode layer 51 in the electrode area of the substrate 1 are covered with a second electrode layer 52. In the present embodiment, by disposing the first electrode layer 51 directly on the substrate 1, and the first electrode layer 51 is at the four top corners of the electrode region of the substrate 1 and is connected to the metal layer 3, and then covering the second electrode layer 52 on the metal layer 3 and the first electrode layer 51 of the electrode region of the substrate 1, the thickness of the resistive element is reduced without changing the volume of the resistive element electrode.

Further, referring to fig. 1 and 2, a second embodiment of the resistor structure of the present utility model is proposed based on the first embodiment of the resistor structure described above.

In this embodiment, the electrode area of the substrate 1 includes a first electrode area and a second electrode area, which are respectively located at two sides of the non-electrode area of the substrate 1 and are connected with the non-electrode area of the substrate 1;

The first electrode layer 51 is at four top corners of the first electrode region and the second electrode region and is connected to the metal layer 3.

It will be appreciated that during the resistor structure setup process, two electrode leads need to be provided to connect the two ends of the resistor with external devices, respectively. Therefore, in the case of plating the electrode layer, two plating metal layers are required, that is, the electrode layer includes two plating metal layers. The plating metal layer is a plating metal layer arranged in the electrode area of the substrate 1 in a plating manner. The metallization layer may be connected to other components via wires. Similarly, the substrate 1 should also include two electrode regions, i.e., a first electrode region and a second electrode region, where a plating metal layer may be deposited in each of the first electrode region and the second electrode region.

The first electrode layer 51 is located at four top corners of the first electrode region and the second electrode region, and is connected to the metal layer 3. Such a layout ensures a stable connection between the first electrode layer 51 and the metal layer 3 and provides a region that has an opportunity to directly contact the metal layer 3. By placing the first electrode layer 51 on the four top corners of the first electrode region and the second electrode region, it is possible to utilize space to the maximum extent and ensure effective connection with the metal layer 3. This design enables the resistive element to be more compact in thickness while maintaining the electrode volume unchanged. Such a structural design may provide better resistance characteristics and current flow effects while also reducing the size of the element. In this way, the resistive element can achieve a smaller overall size while maintaining functionality and performance, meeting the requirements of compact design and high integration.

In this embodiment, the first electrode layers 51 are uniformly distributed at four vertexes of the first electrode region and the second electrode region at predetermined intervals and connected to the metal layer 3.

The first electrode layers 51 are uniformly distributed at four vertexes of the first electrode region and the second electrode region at predetermined intervals, and are connected to the metal layer 3. This means that the first electrode layer 51 is uniformly distributed over the four vertices of the first electrode region and the second electrode region and forms a connection with the metal layer 3. By such a layout, it is possible to achieve uniform flow of current in the resistive structure, and current can be transmitted through the connection between the first electrode layer 51 and the metal layer 3. Also, this design ensures that the resistive element has corresponding electrode contacts at each vertex of the electrode area to improve the electrical characteristics and reliability of the resistive element.

Further, in the present embodiment, the thickness of the first electrode layer 51 is equal to the thickness of the metal layer 3.

The first electrode layer 51 and the metal layer 3 have the same thickness, and the uniformity and stability of each portion of the resistive element can be ensured by keeping the thicknesses of both equal. The connection between the first electrode layer 51 and the metal layer 3 with equal thickness can also optimize the current transmission and the resistance characteristics, since equal thickness helps to balance the structure and the performance of the resistive element. Further, by keeping the thickness of the first electrode layer 51 equal to the thickness of the metal layer 3, it is also helpful to further reduce the overall thickness of the resistive element.

Further, in the present embodiment, the sum of the thicknesses of the first electrode layer 51 and the second electrode layer 52 is larger than the sum of the thicknesses of the metal layer 3 and the first insulating layer 4.

It should be understood that during the resistive structure placement process, the first electrode layer 51 and the second electrode layer 52 need to be led out to connect the resistive structure with other components. Accordingly, the sum of the thicknesses of the first electrode layer 51 and the second electrode layer 52 is set to be larger than the sum of the thicknesses of the metal layer 3 and the first insulating layer 4, so that the second electrode layer 52 is provided to protrude on the resistive structure.

Referring to fig. 5 and 6, fig. 5 is a schematic structural diagram of a third embodiment of a resistor structure according to the present utility model; FIG. 6 is a top view of a third embodiment of a resistor structure according to the present utility model; a third embodiment of the resistor structure of the present utility model is presented based on the above-described second embodiment.

In this embodiment, a second insulating layer 6 is further disposed on the first insulating layer 4.

It will be appreciated that after the resistive structure is set, it is also necessary to detect the specific resistance value of the resistive structure. During the inspection process, a process of trimming the metal layer 3 in the resistive structure may be involved. For example, in the etching process of the metal layer 3, there is a certain error, so that there is a certain difference between the resistance value of the resistance structure and the actually required resistance value, and the metal layer 3 needs to be modified, so that the resistance value of the resistance structure meets the requirement.

In addition, when the resistance value is adjusted, the structure of the metal layer 3 may be generally adjusted in a fine-tuning manner, but since the first insulating layer 4 is provided on the metal layer 3, the structure of the first insulating layer 4 is damaged when the metal layer 3 is adjusted. After the resistance value of the resistor structure is adjusted, in order to avoid that the metal layer 3 is partially exposed in the external environment, a second insulating layer 6 can be further arranged on the first insulating layer 4, so that the metal layer 3 is effectively prevented from being partially exposed in the external environment.

It will be appreciated that the second insulating layer 6 may be the same structure and composition as the first insulating layer 4, but may also be different. Of course, during the actual setting process, the first insulating layer 4 and the second insulating layer 6 may likewise be composed of solder resist ink.

In this embodiment, the sum of the thicknesses of the metal layer 3, the first insulating layer 4, and the second insulating layer 6 may also be set to be the same as the electrode layer thickness in order to further reduce the thickness of the resistive structure.

It will be appreciated that the electrode layer, the metal layer 3, the first insulating layer 4 and the second insulating layer 6 are all necessary structures during the fabrication of the resistor structure. Wherein the electrode layer is disposed in an electrode region of the metal layer 3, and the first insulating layer 4 and the second insulating layer 6 are sequentially disposed in a non-electrode region of the metal layer 3. Setting the sum of the thicknesses of the metal layer 3, the first insulating layer 4, and the second insulating layer 6 to be the same as the electrode layer thickness can improve other properties of the resistive structure while reducing the thickness of the resistive structure. For example, in the case that the thickness of the electrode layer is greater than the sum of the thicknesses of the metal layer 3, the first insulating layer 4 and the second insulating layer 6, the thickness of the first insulating layer 4 or the second insulating layer 6 can be increased, so that the protection of the metal layer 3 is further enhanced under the condition that the whole thickness of the resistor structure is not changed; in the case that the thickness of the electrode layer is smaller than the sum of the thicknesses of the metal layer 3, the first insulating layer 4 and the second insulating layer 6, the thickness of the electrode layer can be properly adjusted, and the stability of the resistance structure during measurement can be increased.

The foregoing description is only of the preferred embodiments of the present utility model, and is not intended to limit the scope of the utility model, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.

Claims (10)

1. A resistor structure, the resistor structure comprising:

A substrate;

The first electrode layer is positioned at four vertex angles of the substrate electrode zone and is connected with the metal layer;

And the metal layer positioned in the base electrode region and the first electrode layer are covered with a second electrode layer.

2. The resistive structure of claim 1, wherein the base electrode region comprises a first electrode region and a second electrode region, the first electrode region and the second electrode region being located on opposite sides of and contiguous with a base non-electrode region, respectively;

The first electrode layer is positioned at four vertex angles of the first electrode region and the second electrode region and is connected with the metal layer.

3. The resistive structure of claim 2, wherein the first electrode layer is uniformly distributed at four vertices of the first electrode region and the second electrode region at predetermined intervals and is connected to the metal layer.

4. A resistive structure according to claim 3, wherein the thickness of the first electrode layer is equal to the thickness of the metal layer.

5. The resistive structure of claim 1, wherein the resistive structure further comprises: a first insulating layer;

The first insulating layer covers the upper surface of the metal layer in the non-electrode region of the substrate.

6. The resistive structure of claim 5, wherein a sum of thicknesses of the first electrode layer and the second electrode layer is greater than a sum of thicknesses of the metal layer and the first insulating layer.

7. The resistive structure of claim 1, further comprising a contact layer disposed on the substrate, the metal layer disposed on the contact layer.

8. The resistor structure of claim 5, wherein the first insulating layer is further provided with a second insulating layer.

9. The resistive structure of claim 8, wherein the first insulating layer and the second insulating layer are comprised of an organic material, an inorganic material, or a combination of organic and inorganic materials.

10. The resistive structure of claim 9, wherein a sum of thicknesses of the metal layer, the first insulating layer, and the second insulating layer is equal to or less than a sum of thicknesses of the first electrode layer and the second electrode layer.