CN222813551U - Ultrasonic detection device for wet etching equipment and wet etching equipment - Google Patents

Abstract

The utility model provides an ultrasonic detection device for wet etching equipment and the wet etching equipment, which comprise an ultrasonic detection piece, an inclination judgment unit and an inclination judgment unit, wherein the ultrasonic detection piece is arranged in an etching groove and is used for transmitting ultrasonic waves to a wafer arranged on a lifter and receiving echoes reflected from the wafer, and the inclination judgment unit is connected with the ultrasonic detection piece and is used for judging whether the wafer is inclined according to the actual time from the ultrasonic detection piece transmitting the ultrasonic waves to the receiving of the echoes, so as to judge whether the lifter is inclined. According to the utility model, whether the wafer is inclined or not is automatically detected through the ultrasonic detection part and the inclination judging unit, so that whether the lifter is inclined or not is obtained, manual operation is not needed, and the pollution to the clamping groove is avoided.

Description

Ultrasonic detection device for wet etching equipment and wet etching equipment

Technical Field

The utility model relates to the technical field of semiconductor manufacturing, in particular to an ultrasonic detection device for wet etching equipment and the wet etching equipment.

Background

The existing wet etching equipment comprises an etching groove and a lifter, wherein the lifter comprises a mechanical arm and a clamping groove for placing a wafer, and the wafer can be taken out of or fed into the etching groove through lifting of the mechanical arm. In the long-time use process of the lifter, if the lifter is not adjusted in time, the lifter may incline, so that the wafer inclines, and the inclined wafer surface is easy to form defects, so that the product quality is affected.

The current common method for detecting whether the lifter is inclined is to put a horizontal plate on a clamping groove of a mechanical arm and then measure the inclination of the horizontal plate by using a level meter. The manpower measurement mode is complex, the borrowing machine test is needed, and the clamping groove can be polluted in the test process.

In view of the foregoing, there is a need for an ultrasonic inspection apparatus for a wet etching apparatus and a wet etching apparatus to solve the above problems.

Disclosure of utility model

The utility model aims to provide an ultrasonic detection device for wet etching equipment and the wet etching equipment, which are used for solving the problems that the existing detection mode is complex and pollution is possibly generated.

The utility model provides an ultrasonic detection device for wet etching equipment, which comprises:

The ultrasonic detection piece is arranged in the etching groove and is used for transmitting ultrasonic waves to the wafer arranged on the lifter and receiving echoes reflected from the wafer;

And the inclination judging unit is connected with the ultrasonic detection piece and is used for judging whether the wafer is inclined or not according to the actual time from the ultrasonic detection piece transmitting ultrasonic waves to the echo receiving, so as to judge whether the lifter is inclined or not.

The ultrasonic detection device provided by the utility model has the beneficial effects that whether the wafer is inclined or not is automatically detected through the ultrasonic detection piece and the inclination judgment unit, so that whether the lifter is inclined or not is obtained, manual operation is not needed, and the pollution to the clamping groove is avoided.

In one possible embodiment, the ultrasonic detection device further includes an angle calculating unit connected to the inclination determining unit, and configured to calculate, when the determination result is that the lifter is inclined, an inclination angle of the wafer according to the actual time and a standard time from when the ultrasonic detection element transmits ultrasonic waves to when the ultrasonic detection element receives an echo. The wafer inclination angle obtained by the angle calculation unit can guide engineers to adjust the lifter to a horizontal state more easily.

In a possible embodiment, the ultrasonic detection device further comprises a temperature detection unit connected to the ultrasonic detection member, and the temperature detection unit is configured to obtain the temperature of the wafer surface according to the actual voltage of the echo. The ultrasonic detection device has the beneficial effects that the temperature of the surface of the wafer can be detected through the ultrasonic detection piece and the temperature detection unit.

In a possible embodiment, the ultrasonic detection piece includes a plurality of ultrasonic probes distributed at intervals, the plurality of ultrasonic probes are respectively connected with the temperature detection unit, and ultrasonic waves are emitted to different areas of the wafer through the plurality of ultrasonic probes so as to realize temperature detection of the different areas of the wafer. The ultrasonic probe has the beneficial effects that the temperatures of different areas on the surface of the wafer can be detected through the ultrasonic probes and the temperature detection units.

In one possible embodiment, the arrangement range of the ultrasonic probes is matched with the surface range of the wafer, the ultrasonic probes are arranged in a linear array of multiple rows or multiple columns, or one ultrasonic probe of the ultrasonic probes is located at a central position, the other ultrasonic probes are arranged in an annular array with the central position as a circle center, or one ultrasonic probe of the ultrasonic probes is located at the central position, and the other ultrasonic probes are arranged in a square array with the central position as a center. The ultrasonic probe has the beneficial effects that the arrangement positions of the ultrasonic probes are reasonably arranged to cover the surface of the wafer, so that more comprehensive temperature distribution information of the surface of the wafer is obtained.

In one possible embodiment, the ultrasonic detection device further comprises a transverse adjusting mechanism which is arranged in the etching groove and is transversely arranged, the ultrasonic detection piece is arranged on the transverse adjusting mechanism, the transverse adjusting mechanism is used for adjusting the transverse position of the ultrasonic detection piece, or the ultrasonic detection device further comprises a vertical adjusting mechanism which is arranged in the etching groove and is vertically arranged, the ultrasonic detection piece is arranged on the vertical adjusting mechanism, the vertical adjusting mechanism is used for adjusting the vertical position of the ultrasonic detection piece, or the ultrasonic detection piece is arranged in the etching groove through the transverse adjusting mechanism and the vertical adjusting mechanism, the transverse adjusting mechanism is transversely arranged, the vertical adjusting mechanism is vertically arranged, and the transverse and vertical position adjustment of the ultrasonic detection piece can be realized through the transverse adjusting mechanism and the vertical adjusting mechanism. The ultrasonic detection device has the beneficial effects that the position of the ultrasonic detection piece is adjusted through movement, and the first probe can be used for detecting the temperature corresponding to different areas of the surface of the wafer.

In one possible embodiment, the lateral adjustment mechanism is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod for the case where the lateral adjustment mechanism is provided, and the vertical adjustment mechanism is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod for the case where the vertical adjustment mechanism is provided.

In one possible embodiment, the ultrasonic detection device further includes an alarm connected to the inclination determination unit, and the alarm sounds an alarm when the determination result is that the lifter is inclined.

In one possible embodiment, the housing of the ultrasonic testing element is made of an acid-resistant, high temperature-resistant material.

The utility model also provides wet etching equipment which comprises an etching groove, a lifter and an ultrasonic detection device for the wet etching equipment in any implementation.

Drawings

Fig. 1 is a schematic installation view of an ultrasonic testing apparatus for a wet etching device according to the present utility model.

Fig. 2 is a schematic diagram of an ultrasonic testing apparatus for a wet etching device according to the present utility model.

Fig. 3 is a schematic view of an ultrasonic detection apparatus for a wet etching device according to the present utility model emitting ultrasonic waves to a point of a wafer a.

Fig. 4 is a schematic view of an ultrasonic detection apparatus for a wet etching device according to the present utility model for measuring a standard distance d1 by ultrasonic waves to an a point on an untilted wafer.

Fig. 5 is a schematic diagram of an ultrasonic detection device for wet etching equipment according to the present utility model for detecting an actual distance d by ultrasonic waves from a point of a wafer a during detection.

Fig. 6 is a schematic diagram showing the detection of the inclination angle of a wafer in the ultrasonic detection apparatus for wet etching equipment according to the present utility model.

Fig. 7 is a schematic diagram showing the degree of attenuation of ultrasonic waves and echoes emitted from an ultrasonic detecting element to a wafer in the ultrasonic detecting device for wet etching equipment according to the present utility model.

Fig. 8 is a schematic diagram of an ultrasonic probe in a linear array arrangement of a plurality of columns in an ultrasonic testing device for wet etching equipment according to the present utility model.

Fig. 9 is a schematic diagram of an ultrasonic probe in an annular array arrangement in an ultrasonic detection device for wet etching equipment according to the present utility model.

Fig. 10 is a schematic diagram of an ultrasonic probe in a square array arrangement in an ultrasonic detection device for wet etching equipment according to the present utility model.

Fig. 11 is a schematic diagram of a lateral adjustment mechanism and a vertical adjustment mechanism in an ultrasonic inspection apparatus for wet etching equipment according to the present utility model.

Reference numerals illustrate an ultrasonic inspection apparatus 100, an ultrasonic inspection piece 110, an ultrasonic probe 111, a tilt judgment unit 120, an angle calculation unit 130, a temperature detection unit 140, a lateral adjustment mechanism 150, a vertical adjustment mechanism 160, an alarm 170, a wafer 200, and an etched tank 300.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

In view of the problems of the prior art, an embodiment of the present utility model provides an ultrasonic inspection apparatus for a wet etching device, referring to fig. 1 and 2, the ultrasonic inspection apparatus 100 including an ultrasonic inspection piece 110 and an inclination judging unit 120, the ultrasonic inspection piece 110 being disposed in an etching groove 300 and configured to emit ultrasonic waves toward a wafer 200 placed on a lifter (not shown) and to receive echoes reflected from the wafer 200. The tilt determining unit 120 is connected to the ultrasonic detecting element 110 and is configured to determine whether the wafer 200 is tilted according to an actual time from the ultrasonic detecting element 110 transmitting the ultrasonic wave to receiving the echo, and further determine whether the lifter is tilted.

In this embodiment, the ultrasonic detector 110 emits ultrasonic waves to the wafer 200 and receives reflected echoes, the inclination determining unit 120 calculates the actual distance between the ultrasonic detector 110 and the wafer 200 according to the actual time from the ultrasonic detector 110 emitting ultrasonic waves to the echo receiving time, if the actual distance is not equal to the standard distance between the ultrasonic detector 110 and the wafer 200 or the deviation between the actual distance and the standard distance exceeds the preset range, the wafer 200 is determined to be inclined, and if the actual distance is equal to the standard distance or the deviation between the actual distance and the standard distance is less than the preset range (i.e., the deviation is very small), the wafer 200 is determined to be not inclined. The complicated steps of manual operation are reduced through automatic detection and judgment, and the detection efficiency is improved. Moreover, the ultrasonic wave can realize non-contact detection, and avoid the pollution to the wafer 200 and the clamping groove caused by the direct contact of the wafer 200 and the clamping groove.

In a preferred embodiment, referring to fig. 1 and 2, the ultrasonic testing apparatus 100 further includes an angle calculating unit 130 connected to the tilt determining unit 120, for calculating the tilt angle of the wafer 200 according to the actual time and the standard time from the ultrasonic testing element 110 transmitting the ultrasonic wave to receiving the echo when the determination result is that the lifter is tilted. According to the actual time and the standard time, the tilt angle of the wafer 200 is automatically calculated, and the engineer horizontally adjusts the lifter according to the tilt angle of the wafer 200, so that the lifter can be adjusted to a horizontal state more quickly.

The principle of calculating the inclination angle is explained below with reference to the drawings, and as shown in fig. 3, the ultrasonic detecting element 110 emits ultrasonic waves toward an a point on the wafer 200, where the distance between the a point and the center 0 of the wafer 200 is h. As shown in fig. 4, when the wafer 200 is not tilted, the ultrasonic detection element 110 transmits ultrasonic waves to the point a on the wafer 200 and receives echoes reflected from the point a on the wafer 200, a standard time t1 from transmitting the ultrasonic waves to receiving the echoes is measured, and a standard distance d1=v×t1 between the ultrasonic detection element 110 and the point a is calculated, where v is a sound velocity. As shown in fig. 5, in the actual detection, the ultrasonic detection element 110 emits ultrasonic waves toward the point a on the wafer 200 and receives echoes reflected from the point a on the wafer 200, the actual time t from the emission of the ultrasonic waves to the reception of the echoes is measured, and the actual distance d=v×t between the ultrasonic detection element 110 and the point a is calculated. If d is equal to d1, it is determined that the wafer 200 is tilted, as shown in fig. 6, the tilt angle β=arctan (|d-d1|/h) of the wafer 200 is calculated, and the tilt angle of the lifter is determined.

It is well known that the etch rate of a chemical on a film is affected by temperature and concentration, and therefore it is important to detect the temperature of the chemical on the wafer 200 during the process, and the difference in temperature may cause a difference in the etch rate between the chips, thereby affecting the performance of the product. For example, the temperature of phosphoric acid in the phosphoric acid tank is set at 160 ℃. Because of the differences within the wafer 200 and the fluctuations in the temperature of the phosphoric acid itself, the temperature of the surface of the wafer 200 and thus the etch rate of the wafer 200 may be affected. One of the existing temperature detection methods is to detect the temperature of the chemical by a thermometer on a chemical conveying pipeline, but a certain distance exists between a detection point at the thermometer and the surface of the wafer 200, and the temperature measured by the thermometer is not directly measured on the surface of the wafer 200, and is deviated from the actual temperature of the surface of the wafer 200, and the other temperature detection method is to directly monitor the temperature on the wafer 200, wherein a temperature sensor is arranged inside the wafer 200 and is used for measuring the real-time temperature of the surface of the wafer 200, but the mode needs to be matched with a computer and a special wafer box, so that the service life is shorter and the cost is more expensive.

In order to solve this problem, referring to fig. 2 and 7, a temperature measurement design for the surface of the wafer 200 is designed in this embodiment, and the ultrasonic detection apparatus 100 further includes a temperature detection unit 140 connected to the ultrasonic detection member 110, for obtaining the temperature of the surface of the wafer 200 according to the actual voltage of the echo. In this embodiment, compared with the existing thermometer measurement or the built-in sensor of the wafer 200, the ultrasonic detection technology is adopted in the scheme, so that the non-contact temperature measurement of the surface of the wafer 200 is realized, the temperature error caused by the distance between the thermometer position and the surface of the wafer 200 is avoided, and the problems of extra cost, complexity and the like possibly caused by the built-in sensor are also overcome.

The propagation speed and attenuation degree of ultrasonic waves in a medium are closely related to the temperature of the medium. Generally, when the temperature is lower, the absorption and scattering of the ultrasonic wave by the medium are smaller, the attenuation of the ultrasonic energy is smaller, and the echo signal is stronger, and when the temperature is higher, the thermal motion of the medium molecules is aggravated, the absorption and scattering of the ultrasonic wave are enhanced, so that the attenuation of the ultrasonic energy is increased, and the echo signal is weakened. Referring to fig. 7, the ultrasonic probe 111 emits ultrasonic waves toward the surface of the wafer 200, and the ultrasonic waves are reflected at the surface of the wafer 200 to generate echoes. The voltage V of the echo is inversely proportional to the attenuation degree of the ultrasonic wave in the propagation process, namely, the smaller the attenuation is, the higher the echo voltage is, as shown by the waveform corresponding to a in fig. 7, and the larger the attenuation is, the lower the echo voltage is, as shown by the waveform corresponding to b in fig. 7. Based on the corresponding relation between the ultrasonic echo voltage V and the temperature, a simulation experiment can be performed in advance, and a corresponding relation table between the temperature and the ultrasonic echo voltage is established by calibrating the ultrasonic echo voltages V at different temperatures. The temperature detecting unit 140 searches the correspondence table according to the actual voltage of the echo, and obtains the temperature of the surface of the wafer 200.

It should be noted that, the inclination determining unit 120, the angle calculating unit 130, and the temperature detecting unit 140 in the present utility model are all hardware devices and are integrated on the controller.

In one embodiment, referring to fig. 8, 9 and 10, the ultrasonic detection member 110 includes a plurality of ultrasonic probes 111 distributed at intervals, the plurality of ultrasonic probes 111 are respectively connected to the temperature detection unit 140, and ultrasonic waves are emitted to different areas of the wafer 200 through the plurality of ultrasonic probes 111, so as to realize temperature detection of the different areas of the wafer 200. In this embodiment, by the ultrasonic probes 111 distributed at intervals, this multi-point detection manner can reflect the real temperature distribution of the surface of the wafer 200 more than the single-point detection. Even if one or several of the ultrasonic probes 111 fail or measurement is inaccurate, the other probes can still function properly and provide valid data. This multi-point detection design enhances the robustness and reliability of the overall temperature detection.

In some embodiments, referring to fig. 8, the arrangement range of the plurality of ultrasonic probes 111 is adapted to the surface range of the wafer 200, and the plurality of ultrasonic probes 111 are arranged in a linear array of multiple rows or columns. Or referring to fig. 9, one ultrasonic probe 111 of the plurality of ultrasonic probes 111 is located at a central position, the rest of ultrasonic probes 111 are distributed in an annular array by taking the central position as a center, the annular array is formed by arranging multiple layers in a layer-by-layer nested mode at intervals, as shown in fig. 9, the ultrasonic probe 111 is designed in a three-layer mode and is respectively formed by an inner layer, an intermediate layer and an outer layer from inside to outside, or referring to fig. 10, one ultrasonic probe 111 of the plurality of ultrasonic probes 111 is located at the central position, the rest of ultrasonic probes 111 are distributed in a square array by taking the central position as the center, and the square array is formed by arranging multiple layers in a layer-by-layer nested mode at intervals. In this embodiment, by reasonably setting the arrangement mode of the ultrasonic probes 111, it is ensured that each area on the surface of the wafer 200 is covered by the ultrasonic probes 111, so that detection dead zones are greatly reduced, more comprehensive temperature distribution information on the surface of the wafer 200 is obtained, and the integrity and comprehensiveness of temperature data acquisition are improved.

In a preferred embodiment, referring to fig. 1 and 11, the ultrasonic testing apparatus 100 further includes a transverse adjustment mechanism 150 disposed in the etching tank 300 and disposed transversely, the ultrasonic testing element 110 is disposed on the transverse adjustment mechanism 150, and the transverse adjustment mechanism 150 is used for adjusting the transverse position of the ultrasonic testing element 110. Or the ultrasonic detection device 100 further includes a vertical adjustment mechanism 160 disposed in the etching tank 300 and disposed vertically, the ultrasonic detection element 110 is disposed on the vertical adjustment mechanism 160, and the vertical adjustment mechanism 160 is used for adjusting the vertical position of the ultrasonic detection element 110. Or the ultrasonic detection piece 110 is arranged in the etching groove 300 through the transverse adjusting mechanism 150 and the vertical adjusting mechanism 160, the transverse adjusting mechanism 150 is transversely arranged, the vertical adjusting mechanism 160 is vertically arranged, and the transverse and vertical position adjustment of the ultrasonic detection piece 110 can be realized through the transverse adjusting mechanism 150 and the vertical adjusting mechanism 160. In this embodiment, when the ultrasonic detection element 110 is only provided with one ultrasonic probe 111, the position of the ultrasonic detection element 110 can be moved and adjusted by moving and adjusting the transverse adjustment mechanism 150 and/or the vertical adjustment mechanism 160, so that the ultrasonic probe 111 of the ultrasonic detection element 110 can emit ultrasonic waves for different areas on the surface of the wafer 200, and temperature detection for different areas on the surface of the wafer 200 can be realized by only one ultrasonic probe 111, and meanwhile, detection of the inclination angle of the wafer 200 can be performed for a plurality of position points on the surface of the wafer 200, thereby improving detection accuracy of the inclination angle.

In one possible embodiment, referring to fig. 11, the lateral adjustment mechanism 150 is a linear module, cylinder, hydraulic cylinder, or electric telescopic rod for the case where the lateral adjustment mechanism 150 is provided, and the vertical adjustment mechanism 160 is a linear module, cylinder, hydraulic cylinder, or electric telescopic rod for the case where the vertical adjustment mechanism 160 is provided. As shown in fig. 11, the vertical adjustment mechanism 160 adopts a cylinder, the horizontal adjustment mechanism 150 adopts a linear module and is disposed at the top end of the cylinder, and the ultrasonic detection member 110 is disposed on a sliding table of the linear module. The linear module and the vertical movement adjustment of the ultrasonic detection piece 110 on the linear module are realized through the telescopic adjustment of the air cylinder, and the transverse movement of the ultrasonic detection piece 110 is realized by driving the transverse movement of the sliding table on the linear module. The lateral adjustment mechanism 150 and the vertical adjustment mechanism 160 specifically adopt devices and an assembly positional relationship, and can be flexibly designed according to actual production requirements, which is not limited herein.

In one possible embodiment, the ultrasonic testing device 100 further includes an alarm 170 connected to the tilt determining unit 120, and the alarm 170 sounds an alarm when the lifter is tilted as a result of the determination. The alarm 170 is further connected to the temperature detecting unit 140, and the alarm 170 emits an alarm when the actually measured surface temperature of the wafer 200 is greater than a preset temperature range. When the alarm detects that the lifter tilts or the surface temperature of the wafer 200 exceeds the standard, the alarm 170 immediately gives an alarm to remind an engineer to take measures in time.

In one possible embodiment, the housing of the ultrasonic sensing device 110 is made of an acid-resistant, high temperature-resistant material, such as polytetrafluoroethylene, ceramic, glass, or the like.

The technical effects of the ultrasonic testing apparatus for wet etching equipment of the present utility model will be explained in detail below.

1. Whether the wafer 200 is inclined or not is automatically detected by utilizing ultrasonic waves, and whether the lifter is inclined or not is judged, manual operation detection is not needed, the detection efficiency is improved, and the wafer 200 and the clamping groove are prevented from being polluted. By calculating the tilt angle of the wafer 200, engineers can be instructed to quickly achieve horizontal adjustment of the lifter.

2. The temperature detection unit 140 can directly detect the surface temperature of the wafer 200, thereby improving the detection accuracy and the detection cost. In addition, the overall temperature detection of different areas on the surface of the wafer 200 is realized through the arrangement design of the plurality of ultrasonic probes 111.

3. By moving and adjusting the transverse adjusting mechanism 150 and/or the vertical adjusting mechanism 160, the temperature detection of different areas on the surface of the wafer 200 can be realized by utilizing multiple times of detection of one ultrasonic probe 111, and the detection accuracy of angles can be improved by detecting the inclination angles of multiple position points.

The utility model also provides wet etching equipment, which comprises an etching groove 300, a lifter and the ultrasonic detection device 100 for the wet etching equipment.

While embodiments of the present utility model have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present utility model as set forth in the following claims. Moreover, the utility model described herein is capable of other embodiments and of being practiced or of being carried out in various ways. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.

Claims (10)

1. An ultrasonic testing device for wet etching equipment, comprising:

The ultrasonic detection piece is arranged in the etching groove and is used for transmitting ultrasonic waves to the wafer arranged on the lifter and receiving echoes reflected from the wafer;

And the inclination judging unit is connected with the ultrasonic detection piece and is used for judging whether the wafer is inclined or not according to the actual time from the ultrasonic detection piece transmitting ultrasonic waves to the echo receiving, so as to judge whether the lifter is inclined or not.

2. The ultrasonic testing apparatus according to claim 1, further comprising an angle calculating unit connected to the tilt judging unit for calculating the tilt angle of the wafer based on the actual time and a standard time from when the ultrasonic testing member transmits ultrasonic waves to when the lifter is tilted as a result of the judgment.

3. The ultrasonic testing device for wet etching equipment according to claim 1, further comprising a temperature detecting unit connected to the ultrasonic testing member for obtaining the temperature of the wafer surface based on the actual voltage of the echo.

4. The ultrasonic detection device for wet etching equipment according to claim 3, wherein the ultrasonic detection member comprises a plurality of ultrasonic probes which are distributed at intervals, the plurality of ultrasonic probes are respectively connected with the temperature detection unit, and ultrasonic waves are emitted to different areas of the wafer through the plurality of ultrasonic probes so as to realize temperature detection of the different areas of the wafer.

5. The ultrasonic testing device for wet etching equipment according to claim 4, wherein the arrangement range of the plurality of ultrasonic probes is adapted to the surface range of the wafer;

a plurality of ultrasonic probes are arranged in a linear array of a plurality of rows or a plurality of columns, or

One of the ultrasonic probes is positioned at the central position, and the rest of the ultrasonic probes are distributed in an annular array by taking the central position as the center of a circle, or

One ultrasonic probe of the plurality of ultrasonic probes is positioned at the central position, and the rest ultrasonic probes are distributed in a square array by taking the central position as the center.

6. The ultrasonic testing apparatus according to any one of claims 1 to 5, further comprising a transverse adjusting mechanism disposed in the etching tank and disposed transversely, wherein the ultrasonic testing element is disposed on the transverse adjusting mechanism, and the transverse adjusting mechanism is used for adjusting the transverse position of the ultrasonic testing element, or

The ultrasonic detection device also comprises a vertical adjusting mechanism which is arranged in the etching groove and is vertically arranged, wherein the ultrasonic detection piece is arranged on the vertical adjusting mechanism, and the vertical adjusting mechanism is used for adjusting the vertical position of the ultrasonic detection piece, or

The ultrasonic detection part is arranged in the etching groove through a transverse adjusting mechanism and a vertical adjusting mechanism, the transverse adjusting mechanism is transversely arranged, the vertical adjusting mechanism is vertically arranged, and the transverse and vertical position adjustment of the ultrasonic detection part can be realized through the transverse adjusting mechanism and the vertical adjusting mechanism.

7. The ultrasonic testing apparatus for wet etching equipment according to claim 6, wherein the lateral adjustment mechanism is a linear module, a cylinder, a hydraulic cylinder, or an electric telescopic rod for the case where the lateral adjustment mechanism is provided;

the vertical adjusting mechanism is a linear module, a cylinder, a hydraulic cylinder or an electric telescopic rod.

8. The ultrasonic testing apparatus for a wet etching device according to any one of claims 1 to 5, further comprising an alarm connected to the tilt judging unit, the alarm giving an alarm when the lifter is tilted as a result of the judgment.

9. The ultrasonic testing device for wet etching equipment according to any one of claims 1 to 5, wherein the housing of the ultrasonic testing member is made of an acid-resistant and high-temperature-resistant material.

10. A wet etching apparatus comprising an etching tank, a lifter, and an ultrasonic testing device for a wet etching apparatus according to any one of claims 1 to 9.