DE102013106800A1 - Optoelectronic component and method for producing an optoelectronic component - Google Patents

Abstract

In various embodiments, an optoelectronic device (100) is provided, the optoelectronic device comprising: a first organic functional layer structure (116); a second organic functional layer structure (120); and a carrier pair generation layer structure (118) between the first organic functional layer structure (116) and the second organic functional layer structure (120), the carrier pair generation layer structure (118) comprising: a first carrier pair generation layer (140 ); a second carrier pair generation layer (144); and an interlayer structure (142) between the first carrier pair generation layer (140); and the second carrier pair generation layer (144); and wherein the interlayer structure (142) comprises at least one layer having a planar-periodic honeycomb lattice structure, and wherein the interlayer structure (142) has or is formed of a floating electrical potential.

Description

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided.

An organic opto-electronic device, such as an OLED, may include an anode and a cathode having an organic functional layer system therebetween. The organic functional layer system may comprise one or more emitter layer (s) in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (s) each comprising two or more charge generating layer (s). CGL) for charge carrier pair generation, and one or more electron block layers, also referred to as hole transport layer (HTL), and one or more Lochblockadeschichten, also referred to as electron transport layer (s) ("electron transport layer" - ETL) to direct the current flow.

An OLED can be manufactured with good efficiency and lifetime by conductivity doping by using a p-i-n (p-doped conductive layer - intrinsically conductive layer - n-doped conductive layer) transition analogous to the conventional inorganic LED. Here, the charge carriers from the p-doped or n-doped layers are specifically injected into the intrinsic layer in which the excitons, d. H. Electron-hole pairs, are formed. These can lead to the emission of a photon upon radiative recombination.

By stacking multiple intrinsic layers (stacking), in two or three stacked OLEDs with significantly the same efficiency and identical luminance significantly longer lifetimes can be achieved compared to an OLED with only one intrinsic layer. With the same current density, twice or even three times the luminance can be achieved. In multi-stacked OLEDs, the active emitter layer is less stressed at the same luminance than in unstacked OLEDs.

For stacking, charge carrier pair generation layers consisting of a heavily doped pn junction are needed. A CGL serves as a tunnel junction between the stacked emitter layers. Such CGLs can also be used in organic tandem solar cells or photodetectors where two or more active undoped regions are needed. The prerequisite for the use of a CGL in an optoelectronic component is a simple structure, i. H. as few layers as possible, which are as easy as possible to produce. Furthermore, a low voltage drop across the CGL, and the highest possible transmission of the CGL layers is necessary, d. H. the lowest possible absorption losses in the spectral range, the electromagnetic radiation emitted by the OLED.

A conventional carrier pair generation layer structure (shown in FIG 4a ) conventionally has a doped hole-conducting charge carrier pair generation layer 406 and a doped electron-conducting charge carrier pair generation layer 410 by means of an interlayer structure 408 (Interlayer 408 ) are in communication with each other, so that a pn junction is clearly formed.

The hole-conducting charge carrier pair generation layer 410 and the electron-conducting charge carrier pair generation layer 406 are each formed from one or more organic and / or inorganic substances. The respective matrix is conventionally mixed with one or more organic or inorganic substances (dopants) in the production of the charge carrier pair generation layer in order to increase the conductivity of the matrix. In a conventional method, the electron-conductive charge carrier pair generation layer becomes 406 of a matrix and an n-type dopant and the hole-conducting carrier generation layer 410 formed of a matrix and a p-type dopant. As the n-type dopant, CsCO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg, Cs, Li, NDN-1, NDN-26 are conventionally used. As a p-type dopant are conventionally Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, HAT-CN, NDP-2, NDP-9, Bi (III) pFBz used. CGLs are today known only with few materials (materials presented in 4b ).

The p-doped carrier pair generation layer 410 and the n-doped carrier pair generation layer 406 are highly doped for efficient tunnel junction. As a result, these layers are extremely reactive, which can lead to a high-impedance transition region when the dopants react. In a conventional method, a thin intermediate layer 408 between the p-doped carrier pair generation layer 410 and the n-doped carrier pair generation layer 406 inserted to separate the two reactants from each other, for. B. with a material from the group of phthalocyanines (see 4b ). As a result, a CGL with increased tunneling current and good voltage stability can be formed during high current density and high temperature loading.

For an OLED with one or more CGLs, a CGL should be as high as possible Have transmission in the spectral range of the light emitted from the OLED light, so that absorption losses of the emitted light can be reduced. The conventionally used phthalocyanine derivatives of the intermediate layer 408 have a relatively high absorption, whereby even an intermediate layer of a phthalocyanine with a layer thickness of only a few nanometers can lead to efficiency losses of the OLED.

Furthermore, it is off S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 ; SV Morozov et al., Physical Review Letters 100 (2008) 016602 ; and S. Kumar et al., Nanoscale Research Letters 6 (2011) 390 Method for forming large-area graphene layers known.

Furthermore, it is off P. Vogt et al., Physical Review Letters 108 (2012) 155501 a method of forming silicon layers is known.

Furthermore, it is off Kröger, M. et al., Physical Review B 75 (2007) 235321 a method for measuring work functions shown.

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided with which it is possible to form a more efficient and stable optoelectronic component. By forming the intermediate layer of a charge carrier pair generation structure of graphene or silicon, it is possible to realize an intermediate layer of a carrier pair generation structure in which voltage drop across the intermediate layer is negligible because graphene and silicene have high electric conductivity and with a thin layer thickness can be formed. The low permeability or high barrier effect of graphene or silicene over foreign substances enables a good separation of highly reactive p-type dopants and n-type dopants of the layers of the charge carrier pair generation structure from one another. An intermediate layer of graphene or silicic interlayer needs only a few monolayers thick because of the good barrier effect, whereby the intermediate layer absorbs only little light and thus the intermediate layer becomes optically highly transparent. As a result, the efficiency of the optoelectronic component is not reduced. Furthermore, several layers of graphene and / or silicas can be stacked on top of each other, for example in the form of graphite, so that the barrier effect of the intermediate layer can be adjusted by means of an intermediate layer of graphene or silicones.

In various embodiments, an optoelectronic component is provided, the optoelectronic component having: a first organic functional layer structure; a second organic functional layer structure; and a carrier pair generation layer structure between the first organic functional layer structure and the second organic functional layer structure, wherein the carrier pair generation layer structure comprises: a first carrier pair generation layer; a second carrier pair generation layer; and an interlayer structure between the first carrier pair generation layer; and the second carrier generation layer; and wherein the interlayer structure has at least one layer with a flat-periodic, honeycomb-shaped lattice structure, and wherein the interlayer structure has a floating electrical potential or is formed in such a way.

In various embodiments, an electron-conducting layer of an electronic component can be understood as a layer in which the chemical potential of the substance or of the substance mixture of the layer is formed to be more energetically denser on the conduction band than on the valence band and in which more than half of the freely movable charge carriers are electrons ,

In various embodiments, a hole-conducting layer of an electronic component can be understood as meaning a layer in which the chemical potential of the substance or of the substance mixture of the layer is formed to be more dense on the valence band than on the conduction band and in the case of more than half of the freely movable charge carriers. d. H. free orbital sites for electrons are.

In yet another embodiment, the interlayer structure may be electrically insulating in the direction parallel to the surface normal of the interlayer structure and the valence band of the interlayer structure in that direction energetically above the conduction band of the physically coupled first charge carrier pair generation layer and over the valence band the physically connected second charge carrier pair generation layer, i. H. the charge carrier line can be made by a tunnel current.

An interlayer structure having or having a floating electrical potential is to be understood as meaning that the interlayer structure has no connection to an external electrical connection, for example around the first organic functional layer structure and the second organic functional layer structure electrically parallel to switch.

Under a honeycomb lattice structure can be a honeycomb arrangement of atoms and molecules are understood. A honeycomb arrangement is to be understood as a planar arrangement projected at least in one plane, which has, for example, a triangular, quadrangular, rhombohedral, hexagonal, octagonal and / or polygonal unit cell.

In one embodiment, the interlayer structure may comprise or be formed from at least one of the following substances: carbon, silicon, germanium.

In one embodiment, the interlayer structure may comprise or be formed from a graphene layer.

In one embodiment, the interlayer structure may comprise or be formed from two or more sublayers.

In one embodiment, the interlayer structure may comprise or be formed from a graphite layer.

In one embodiment, the interlayer structure may comprise or be formed from a silicene layer.

In one embodiment, the first charge carrier pair generation layer may comprise a dopant in a matrix.

In one embodiment, the first charge carrier pair generation layer may comprise or be formed from an intrinsically conductive substance.

In one embodiment, the second charge carrier pair generation layer may comprise a dopant in a matrix.

In one embodiment, the second charge carrier pair generation layer may include or be formed from an intrinsically conductive substance.

In one embodiment, the second charge carrier pair generation layer may be electron-conducting.

In one embodiment, the second charge carrier pair generation layer may be formed hole-conducting.

In one embodiment, the first charge carrier pair generation layer may be electron-conducting.

In one embodiment, the first charge carrier pair generation layer may be formed hole-conducting.

In one embodiment, the interlayer structure may be laterally structured.

In one embodiment, the charge carrier pair generation structure may have two or more interlayer structures, wherein the two or more interlayer structures may be formed at different locations in the layer cross section, for example by using the two or more interlayer structures for different layers as interlayer structures. Structures act.

In one embodiment, the optoelectronic component can be configured as an organic light-emitting diode.

In various embodiments, there is provided a method of making an optoelectronic device, the method comprising: forming a first organic functional layer structure; Forming a charge carrier pair generation layer structure over or on the first organic functional layer structure; and forming a second organic functional layer structure over or on the carrier pair generation layer structure, wherein forming the carrier pair generation layer structure comprises: forming a second carrier pair generation layer; Forming an interlayer structure over or on the second carrier pair generation layer; wherein the interlayer structure comprises at least one layer having a flat periodic honeycomb lattice structure, the interlayer structure having a floating electrical potential; and forming a first carrier pair generation layer over or on the interlayer structure.

In one embodiment of the method, the interlayer structure can comprise or be formed from at least one of the following substances: carbon, silicon, germanium.

In one embodiment of the method, the interlayer structure may be formed or formed from a graphene layer.

In one embodiment of the method, the interlayer structure may have two or more sublayers or be formed in such a way.

In one embodiment of the method, the interlayer structure may be a graphite layer be trained to be formed or formed from it.

In one embodiment of the method, the interlayer structure may be formed as having a silicene layer or formed therefrom.

In one configuration of the method, the first charge carrier pair generation layer may be formed such that the first charge carrier pair generation layer has or is formed from a dopant in a matrix.

In one embodiment of the method, the first charge carrier pair generation layer may be formed such that the first charge carrier pair generation layer has or is formed from an intrinsically conductive substance.

In one configuration of the method, the second charge carrier pair generation layer may be formed such that the second charge carrier pair generation layer has or is formed from a dopant in a matrix.

In one embodiment of the method, the second charge carrier pair generation layer may be formed such that the second charge carrier pair generation layer has or is formed from an intrinsically conductive substance.

In one embodiment of the method, the second charge carrier pair generation layer can be formed electron-conducting.

In one embodiment of the method, the second charge carrier pair generation layer may be formed hole-conducting.

In one embodiment of the method, the first charge carrier pair generation layer can be formed electron-conducting.

In one embodiment of the method, the first charge carrier pair generation layer may be formed hole-conducting.

In one embodiment of the method, the interlayer structure can be formed laterally structured.

In one embodiment of the method, the interlayer structure can be patterned on the first charge carrier pair generation layer or the second charge carrier pair generation layer.

In an embodiment of the method, the interlayer structure can be structured after application to the first charge carrier pair generation layer or the second charge carrier pair generation layer, for example by forming at least a region of the first charge carrier pair generation layer or the second charge carrier pair generation Layer is exposed below the interlayer structure.

In one embodiment of the method, the interlayer structure may be formed such that the interlayer structure has or is formed from a plurality of sublayers.

In one embodiment of the method, the sublayers of the interlayer structure may be applied successively over the first charge carrier pair generation layer and / or the second charge carrier pair generation layer. As a result, for example, defects in the crystalline order of individual partial layers can be covered by subsequently applied partial layers and thus the barrier effect can be enhanced.

In one embodiment of the method, the interlayer structure can be applied with a plurality of sublayers having a method over the first charge carrier pair generation layer and / or the second charge carrier pairing layer.

In one embodiment of the method, the charge carrier pair generation structure may be formed having two or more interlayer structures, wherein the two or more interlayer structures may be formed at different locations in the layer cross section, for example by providing the two or more interlayer structures for different Layers act as interlayer structures.

In yet another embodiment of the method, the optoelectronic component can be produced as an organic light-emitting diode.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1a C is a schematic cross-sectional view of an optoelectronic component according to various embodiments;

2a FIG. 2 b shows a schematic cross-sectional view of a charge carrier pair generation layer structure of an optoelectronic component according to various exemplary embodiments; FIG.

3a FIG. 2 b shows a schematic cross-sectional view of a charge carrier pair generation layer structure of an optoelectronic component according to various exemplary embodiments; FIG. and

4a , b is a schematic cross-sectional view of a conventional charge carrier pair generation layer structure of an optoelectronic component and a table with conventional material examples.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc., is used with reference to the orientation of those described. Figure (s) used. Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

An optoelectronic component can be understood to mean an embodiment of an electronic component, the optoelectronic component having an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

An optically active region of an optoelectronic component can be understood as the region of an optoelectronic component which can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

An optoelectronic component which has two planar, optically active sides can, for example, be transparent, for example as a transparent organic light-emitting diode.

However, the optically active region can also have a planar, optically active side and a flat, optically inactive side, for example an organic light-emitting diode which is set up as a top emitter or bottom emitter.

An organic (opto) electronic component may be an organic light emitting diode (OLED), an organic photovoltaic system, for example an organic solar cell, an organic photometer, an organic field effect transistor (OFET) and / or an organic Electronics be formed. The organic field effect transistor may be an all-OFET in which all layers are organic. An organic, electronic component may have an organic functional layer system, which is synonymously also referred to as an organic functional layer structure. The organic functional layer structure may include or be formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a provided electrical current and / or to provide an electrical current from a provided electromagnetic radiation.

Although the various exemplary embodiments are described below with reference to an OLED, these embodiments can, however, also be applied without difficulty to the other electronic and optoelectronic components mentioned above.

An organic substance can be understood as a compound of the carbon characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form.

An inorganic substance may mean a compound which is chemically uniform in form, regardless of the particular state of matter, characterized by characteristic physical and chemical properties Carbon or simple carbon compound can be understood.

An organic-inorganic substance (hybrid substance) can be understood as meaning a compound present in chemically uniform form, characterized by characteristic physical and chemical properties, regardless of the respective state of matter, with compounds which contain carbon and are free of carbon.

The term "substance" includes all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. The term material is synonymous with the term substance used.

Under a mixture of substances can be understood something that consists of components of two or more different substances whose components are, for example, very finely divided.

Graphene can be understood as meaning an organic substance which has an atomically thin layer of in-plane hexagonal carbon atoms. This layer can also act as a giant two-dimensional fullerene molecule; a single unrolled carbon nanotube or as a layer of a lamella of the graphite crystal.

Graphite may be understood as meaning an organic substance which has at least two layers of graphene. Silicides may be understood as meaning an inorganic substance which has an atomically thin layer of hexagonally arranged silicon atoms.

The hexagonal lattice structure of carbon atoms in graphene or silicon atoms in silicene is densely packed with electron clouds and thus can be very dense in terms of permeability of molecules. Graphene, graphite and silicones can therefore form very dense barrier structures with a small thickness.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is transparent to light, for example for the light generated by the light emitting device, for example in one or more wavelength range (s), for example for light in a wavelength range of visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). By way of example, the term "translucent layer" in various exemplary embodiments is to be understood as meaning that substantially all of the amount of light coupled into a structure (for example a layer) is coupled out of the structure (for example layer), whereby part of the light can be scattered in this case

In various embodiments, the term "transparent" or "transparent layer" can be understood as meaning that a layer is permeable to light (for example at least in a subregion of the wavelength range from 380 nm to 780 nm), wherein a structure (for example a layer) coupled-in light is also coupled out without any scattering or light conversion from the structure (for example, layer).

In the event, for example, that a light-emitting monochrome or emission-limited electronic component is to be provided, it is sufficient for the optically translucent layer structure to be translucent at least in a partial region of the wavelength range of the desired monochromatic light or for the limited emission spectrum.

In various embodiments, an adhesive may include or be formed from one of the following: a casein, a glutin, a starch, a cellulose, a resin, a tannin, a lignin, an organic oxygenate. Nitrogen, chlorine and / or sulfur; a metal oxide, a silicate, a phosphate, a borate.

In various embodiments, an adhesive may be used as a hot melt adhesive, for example, a solvent-borne wet adhesive, a contact adhesive, a dispersion adhesive, a water-based adhesive, a plastisol; a polymerization adhesive, for example, a cyanoacrylate adhesive, a methyl methacrylate adhesive, an anaerobic curing adhesive, an unsaturated polyester, a radiation curing adhesive; a polycondensation adhesive, for example, a phenol-formaldehyde resin adhesive, a silicone, a silane-crosslinking polymer adhesive, a polyimide adhesive, a polysulfide adhesive; and / or a polyaddition adhesive, for example an epoxy resin adhesive, a polyurethane adhesive, a silicone, a pressure-sensitive adhesive; have or be formed from it.

The Work function can be understood as the work that is spent on releasing electrons from a solid. The amount of work required for this corresponds to the amount of energy difference of the Fermi energy of the electron in the solid to the energy of the electron in vacuum. The work function of an electron from a charge carrier pair generation layer can be measured, for example, as in FIG Kröger, M. et al., Physical Review B 75 (2007) 235321 is described.

1a shows a cross-sectional view of an optoelectronic device 100 according to various embodiments.

Shown is a schematic cross-sectional view of an optoelectronic component 100 comprising: a carrier 102 , a barrier layer 104 , an electrically active area 106 with a first electrode 110 , an organic functional layer structure 112 with a first organic functional layer structure 116 , a carrier pair generation layers 118 and a second functional layered structure 120 ; and a second electrode 114 ; a barrier thin film 108 , an adhesive layer 122 and a cover 124 , as described in more detail below.

In various embodiments, the organic light-emitting diode (or else the light-emitting components 100 according to the embodiments described above or below) as a so-called top and bottom emitter. A top and bottom emitter can also be referred to as an optically transparent component, for example a transparent organic light-emitting diode.

The optoelectronic component 100 can be set up for receiving and / or providing electromagnetic radiation, wherein the optoelectronic component 100 is set up to generate an electrical energy from a recorded electromagnetic radiation and / or to generate electromagnetic radiation from a provided electrical energy.

The optoelectronic component 100 in the form of a light-emitting component, for example in the form of an organic light-emitting diode 100 , can be a carrier 102 exhibit. The carrier 102 For example, it can serve as a support element for electronic elements or layers, for example light-emitting elements. For example, the carrier 102 Glass, quartz, and / or a semiconductor material or any other suitable material or be formed therefrom. Furthermore, the carrier may comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The substrate 102 may comprise one or more of the above materials. The substrate 102 can be translucent or even transparent.

The carrier 102 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.

A carrier 102 Having a metal or a metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 102 can be translucent or even transparent. With a carrier 102 comprising a metal, the metal may be formed, for example, as a thin layer of transparent or translucent layer, and / or the metal may be part of a mirror structure.

The carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed. A carrier 102 for example, which has a mechanically rigid region and a mechanically flexible region, may be structured, for example, by the rigid region and the flexible region having a different thickness.

A mechanically flexible carrier 102 or the mechanically flexible region may, for example, be formed as a foil, for example a plastic foil, metal foil or a thin glass.

In one embodiment, the carrier may 102 as a waveguide for electromagnetic radiation of the optoelectronic component 100 be formed, for example, be transparent or translucent with respect to the provided electromagnetic radiation of the optoelectronic component 100 ,

On or above the vehicle 102 Optionally, in various embodiments, a barrier layer 104 be arranged, for example on the side of the organic functional layer structure 106 and / or on the side, the organic functional layer structure 106 turned away.

On or above the substrate 102 Optionally, in various embodiments, a barrier layer 104 be arranged.

The barrier layer 104 may comprise or be formed from one or more of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped Zinc oxide, poly (p-phenylene terephthalamide), nylon 66 , as well as mixtures and alloys thereof.

In various embodiments, the barrier layer 10 by means of an atomic layer deposition method (ALD) and / or a molecular layer deposition method (MLD).

In various embodiments, the barrier layer 104 two or more identical and / or different layers, or layers, for example, side by side and / or one above the other, for example, as a barrier layer structure or a barrier stack, for example, structured. Furthermore, the barrier layer 104 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm.

On or above the barrier layer 104 (or, if the barrier layer 104 is absent, on or above the vehicle 102 ) can be an electrically active area 106 of the light emitting device 100 be arranged. The electrically active area 106 can be considered the area of the light-emitting device 100 in which an electric current for operation of the optoelectronic component, for example of the light-emitting component 100 flows.

In various embodiments, the electrically active region 106 a first electrode 110 , a second electrode 114 and in between a functional layer system 112 have, as will be explained in more detail below.

In various embodiments, on or above the barrier layer (or, if the barrier layer is absent (not shown), may be on or above the support 102 ) the first electrode 110 (For example in the form of a first electrode layer 110 ) be applied.

The first electrode 110 (hereinafter also referred to as lower electrode 110 can be formed of an electrically conductive material or be, such as a metal or a conductive transparent oxide (TCO) or a stack of layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first electrode 110 have a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials.

In various embodiments, the first electrode 110 are formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first electrode 110 providing one or more of the following materials, as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, such as Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 110 having electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first electrode 110 and the substrate 102 be formed translucent or transparent. In the case that the first electrode 110 is formed of a metal, the first electrode 110 For example, have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 18 nm 110 For example, have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm. In various embodiments, the first electrode 110 have a layer thickness in a range of about 10 nm to about 25 nm, For example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Furthermore, in the event that the first electrode 110 is formed of a conductive transparent oxide (TCO), the first electrode 110 For example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of about 100 nm to about 150 nm.

Furthermore, in the event that the first electrode 110 For example, from a network of metallic nanowires, such as Ag, which may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or formed by graphene layers and composites, the first electrode 110 For example, a layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of about 40 nm to about 250 nm.

The first electrode 110 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The first electrode 110 may comprise a first electrical connection to which a first electrical potential (provided by a power source (not shown), for example a current source or a voltage source) can be applied. Alternatively, the first electrical potential to the substrate 102 be created or his and then then indirectly the first electrode 110 be supplied or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region 106 of the light emitting device 100 an organically functional layer system 112 , also referred to as an organic electroluminescent layer structure 112 , which are on or above the first electrode 110 is or is applied.

The organic electroluminescent layer structure 112 can have several organic functional layer structures 116 . 120 exhibit. In various embodiments, the organic electroluminescent layer structure 112 but also have more than two organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more.

In 1 are a first organic functional layered structure 116 and a second organic functional layer structure 120 shown.

In various embodiments, the second organic functional layer structure 120 as one of the embodiments of the first organic functional layer structure 116 be educated. The first organic functional layer structure 116 and a second organic functional layer structure 120 may be the same or different, for example, have the same or different emitter material.

The first organic functional layer structure 116 can be on or above the first electrode 110 be arranged.

Furthermore, the second organic functional layer structure 120 over the first organic functional layer structure 116 be arranged, wherein between the first organic functional layer structure 116 and the second organic functional layer structure 120 a carrier pair generation layered structure 118 (English: Charge Generation Layer, CGL) is arranged.

In exemplary embodiments in which more than two organic functional layer structures are provided, a respective charge carrier pair generation layer structure can be provided between in each case two organic functional layer structures.

As will be explained in more detail below, each of the organic functional layer structures 116 . 120 each having one or more emitter layers, for example with fluorescent and / or phosphorescent emitters, and one or more hole-conducting layers (in 1 not shown) (also referred to as hole transport layer (s)).

In various embodiments, alternatively or additionally, one or more electron conduction layers (also referred to as electron transport layer (s)) may be provided.

Examples of emitter materials used in the light-emitting device 100 According to various embodiments for the emitter layer (s), organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene), as well as metal complexes, for example Iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2- carboxypyridyl) iridium III), green phosphorescent Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) ₃ x 2 (PF ₆ ) (tris [4,4'-di-tert -butyl- (2,2 ') - bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10 Bis [N, N-di (p-tolyl) amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-glololidyl-9-enyl-4H-pyran) as non-polymeric emitters. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) of the light-emitting device 100 For example, may be selected so that the light-emitting device 100 White light emitted. The emitter layer (s) may comprise a plurality of emitter materials emitting different colors (for example blue and yellow or blue, green and red), alternatively the emitter layer (s) may also be composed of several sublayers, such as a blue fluorescent emitter layer or blue phosphorescent emitter layer, a green phosphorescent emitter layer and a red phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The emitter materials of various organic functional layer structures can also be chosen such that the individual emitter materials emit light of different colors (for example blue, green or red or any other color combinations, for example any other complementary color combinations), but for example the total light, the is emitted from all organic functional layer structures and is emitted to the outside of the OLED, a light of predetermined color, such as white light, is.

The organic functional layer structures 116 . 120 may generally have one or more electroluminescent layers. The one or more electroluminescent layers may include organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules ("small molecules"), or a combination of these materials. For example, the organic electroluminescent layer structure 112 have one or more electroluminescent layers, which is or are designed as a hole transport layer, so that, for example, in the case of an OLED, an effective hole injection into an electroluminescent layer or an electroluminescent region is made possible. Alternatively, in various embodiments, the organic functional layer structures 116 . 120 , one or more functional layers, which is or are designed as an electron transport layer, so that, for example, in an OLED, effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. For example, tertiary amines, carbazole derivatives, conductive polyaniline or polyethylenedioxythiophene can be used as the material for the hole transport layer. In various embodiments, the one or more electroluminescent layers may be embodied as an electroluminescent layer.

On or above the organic electroluminescent layer structure 110 or optionally on or over the one or more further organic functional layers, the second electrode 114 (For example in the form of a second electrode layer 114 ), as described above.

In various embodiments, the second electrode 114 according to one of the embodiments of the first electrode 110 be formed, wherein the first electrode 110 and the second electrode 114 may be the same or different. In various embodiments, metals are particularly suitable.

In various embodiments, the second electrode 114 (For example, in the case of a metallic second electrode 114 ), for example a layer thickness of less than or equal to approximately 2000 nm, for example a layer thickness of less than or equal to approximately 1000 nm, for example a layer thickness of less than or equal to approximately 500 nm, for example a layer thickness of less than or equal to approximately 200 nm, For example, have a layer thickness of less than or equal to about 100 nm, for example, have a layer thickness of less than or equal to about 50 nm, For example, a layer thickness of less than or equal to about 45 nm, for example, a layer thickness of less than or equal to about 40 nm, for example, a layer thickness of less than or equal to about 35 nm, for example, a layer thickness of less than or equal to about 30 nm, for example, a layer thickness of less than or is about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 114 may be formed in various embodiments of one or more of the materials and with the respective layer thickness or be, as above in connection with the first electrode 110 described.

In various embodiments, the first electrode 110 and the second electrode 114 both translucent or transparent. Thus, the in 1 illustrated light emitting device 100 as a top and bottom emitter (in other words as a transparent light-emitting component 100 ).

The second electrode 114 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 114 may comprise a second electrical connection to which a second electrical potential (which is different from the first electrical potential) provided by the energy source, can be applied. For example, the second electric potential may have a value such that the difference from the first electric potential has a value in a range of about 1.5V to about 230V, for example, a value in a range of about 2.5V to about 15 V, for example, a value in a range of about 3 V to about 12 V. An electric potential up to 230 V can be realized, for example, in the multiple organic functional layer structures 116 . 120 For example, an operation of the optoelectronic component with mains voltage is possible, ie without a ballast. On or above the second electrode 114 and thus on or above the electrically active area 106 Optionally, an encapsulation, for example in the form of a barrier thin layer / thin-layer encapsulation 108 be formed or be.

Under a "barrier thin film" or a "barrier thin film" 108 In the context of this application, for example, a layer or a layer structure can be understood which is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the barrier thin film 108 designed such that it can not be penetrated by OLED-damaging substances such as water, oxygen or solvent or at most very small proportions.

According to one embodiment, the barrier thin film 108 be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin layer 108 have a plurality of sub-layers formed on each other. In other words, according to an embodiment, the barrier thin film 108 be formed as a layer stack (stack). The barrier thin film 108 or one or more sublayers of the barrier film 108 can be formed, for example, by means of a suitable deposition process, for. By means of a molecular layer deposition method (MLD), an Atomic Layer Deposition (ALD) method according to one embodiment, e.g. Plasma Enhanced Atomic Layer Deposition (PEALD) or a plasma-less atomic layer deposition (PLALD) method, or by chemical vapor deposition (CVD) method according to another embodiment, e.g. , A plasma enhanced chemical vapor deposition (PECVD) or plasma-less chemical vapor deposition (PLCVD) process, or alternatively by other suitable deposition techniques.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in the case of a barrier thin film 108 having multiple sublayers, all sublayers are formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in the case of a barrier thin layer 108 comprising a plurality of sublayers, one or more sublayers of the barrier film 108 using a different deposition method than one Atomschichtabscheideverfahren be deposited, for example by means of a gas phase separation method.

The barrier thin film 108 According to one embodiment, it may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.

According to an embodiment, in which the barrier thin film 108 has multiple sub-layers, all sub-layers may have the same layer thickness. According to another embodiment, the individual partial layers of the barrier thin layer 108 have different layer thicknesses. In other words, at least one of the partial layers may have a different layer thickness than one or more other of the partial layers.

The barrier thin film 108 or the individual partial layers of the barrier thin film 108 may be formed according to an embodiment as a translucent or transparent layer. In other words, the barrier thin film 108 (or the individual sublayers of the barrier thin film 108 ) of a translucent or transparent material (or combination of materials that is translucent or transparent).

According to one embodiment, the barrier thin film 108 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 108 aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. In various embodiments, the barrier thin film 108 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 108 one or more high refractive index materials, in other words one or more high refractive index materials, for example having a refractive index of at least 2.

It should also be pointed out that in various embodiments also entirely on a barrier thin film 108 can be waived. In such an embodiment, the optoelectronic component device may for example have a further encapsulation structure, whereby a barrier thin film 108 can be optional, for example, a cover, for example, a Kavitätsglasverkapselung or metallic encapsulation.

In various embodiments, on or above the barrier film 108 an adhesive 122 and / or a protective varnish 122 be provided by means of which, for example, a cover 124 (For example, a glass cover, a metal foil cover, a sealed plastic film cover) on the barrier film 108 attached, for example, is glued. In various embodiments, the optically translucent layer of adhesive 122 and / or protective varnish 122 have a layer thickness of greater than 1 micron, for example, a layer thickness of several microns. In various embodiments, the adhesive may include or be a lamination adhesive.

In various embodiments, light-scattering particles which can lead to a further improvement in the color angle distortion and the coupling-out efficiency can also be embedded in the layer of the adhesive (also referred to as the adhesive layer). In various embodiments may be provided as light scattering particles, for example, dielectric scattering particles such as metal oxides such. For example, silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

In various embodiments, between the second electrode 114 and the layer of adhesive 122 and / or protective varnish 122 or an electrically insulating layer (not shown), for example SiN, for example with a layer thickness in a range from about 300 nm to about 1.5 μm, for example with a layer thickness in a range from about 500 nm to about 1 μm to protect electrically unstable materials, for example during a wet chemical process.

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the cover 124 , Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. For example, in one embodiment, an adhesive may be a high refractive index adhesive having, for example, high refractive non-diffusing particles and an average refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

It should also be noted that in various embodiments, it is entirely an adhesive 122 can be omitted, for example in embodiments in which the cover 124 For example, glass, for example, by plasma spraying on the barrier thin film 108 be applied.

On or above the electrically active area 106 For example, a getter layer may be disposed (not shown) such that the getter layer is the electrically active region 106 hermetically seals with respect to harmful environmental influences, for example, the diffusion rate of water and / or oxygen to the barrier thin film 108 and / or the electrically active region 106 reduced.

In various embodiments, the getter layer may be translucent, transparent or opaque and have a layer thickness of greater than about 1 micron, for example, a layer thickness of several microns. In various embodiments, the matrix of the getter layer may comprise a lamination adhesive.

Furthermore, in various exemplary embodiments, one or more antireflection layers (for example combined with the barrier thin film 108 ) in the light-emitting device 100 be provided.

In various embodiments, the cover may / may 124 and / or the adhesive 122 have a refractive index (for example at a wavelength of 633 nm) of 1.55.

In one embodiment, the cover 124 glass, for example by means of a frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 with the barrier thin film 108 be applied.

Furthermore, in various exemplary embodiments, one or more input / output layers in the organic, optoelectronic component can additionally be provided 100 be formed, for example, an external Auskoppelfolie on or above the carrier 102 (not shown) or an internal coupling-out layer (not shown) in the layer cross-section of the optoelectronic component 100 , The input / outcoupling layer may have a matrix and scattering centers distributed therein, wherein the mean refractive index of the input / outcoupling layer is greater than the average refractive index of the layer from which the electromagnetic radiation is provided.

1b shows a schematic cross-sectional view of an organic functional layer structure according to various embodiments.

Shown is an organic functional layer structure 112 with a first organic functional layer structure 116 and a second organic functional layer structure 120 , which by means of a charge carrier pair generation layer structure 118 connected to each other.

The first organic functional layer structure 116 and / or the second organic functional layer structure 120 can be a hole injection layer 130a , b; a hole transport layer 132a , b; an emitter layer 134a , b; an electron transport layer 136a , b and an electron injection layer 138a , b. In various embodiments, in an organic functional layer structure 112 . 116 . 120 one or more of said layers may be provided, wherein like-like layers may have a physical contact, may only be electrically connected to each other, or may even be formed electrically isolated from each other, for example, may be arranged side by side. In various embodiments, individual layers of the above layers may be optional.

As in 1b In various embodiments, the first organic functional layer structure 116 a first hole injection layer 130a which are on or above the first electrode 110 is trained.

• • HAT-CN, Cu(I)pFBz, MoO_x, WO_x, VO_x, ReO_x, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc;
• • NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidin);
• • beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)benzidin); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin); Spiro TPD(N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin);
• • Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluoren);
• • 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluor;
• • N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidin;
• • 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluoren;
• • 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluoren;
• • 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluoren;
• • Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexan;
• • 2,2',7,7'-tetra(N,N-di-tolyl)amino-spiro-bifluoren; und
• • N,N,N',N'-tetra-naphthalen-2-yl-benzidin.

In various embodiments, the first hole injection layer 130a comprise or consist of one or more of the following materials:

• • HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc;
• NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine);
• Beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine);
• Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene);
• 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene;
• 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene;
• • 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro;
• N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) -benzidine;
• • 2,7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene;
• 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene;
• 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene;
• Di- [4- (N, N-ditolylamino) -phenyl] cyclohexane;
• 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and
• • N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The first hole injection layer 130a may have a layer thickness in a range of about 1 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.

On or above the first hole injection layer 130a may be a first hole transport layer 132a be educated.

• • NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidin);
• • beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidin); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin);
• • Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluoren);
• • 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluor;
• • N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidin;
• • 2,7-Bis[N,N-bis(9,9-spiro-bifluarene-2-yl)-amino]-9,9-spiro-bifluoren;
• • 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluoren;
• • 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluoren;
• • Di-14-(N,N-ditolyl-amino)-phenyl]cyclohexan;
• • 2,2',7,7'-tetra(N,N-di-tolyl)amino-spiro-bifluoren; und
• • N,N,N',N'-tetra-naphthalen-2-yl-benzidin.

In various embodiments, the first hole transport layer 132a comprise or consist of one or more of the following materials:

• NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine);
• Beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine);
• Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene);
• 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene;
• 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene;
• • 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro;
• N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) -benzidine;
• • 2,7-bis [N, N-bis (9,9-spiro-bifluarene-2-yl) -amino] -9,9-spiro-bifluorene;
• 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene;
• 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene;
• Di-14- (N, N-ditolylamino) -phenyl] cyclohexane;
• 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and
• • N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The first hole transport layer 132a may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the hole transport layer 132a can be a first emitter layer 134a be educated. The emitter materials, for example, for the first emitter layer 134a can be provided are described above.

In various embodiments, the first emitter layer 134a a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

Furthermore, on or above the first emitter layer 134a a first electron transport layer 136a arranged, for example, be deposited.

• • NET-18
• • 2,2',2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole);
• • 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP);
• • 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole;
• • 1,3-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene;
• • 4,7-Diphenyl-1,10-phenanthroline (BPhen);
• • 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole;
• • Bis (2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium;
• • 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl;
• • 2-phenyl-9,10-di(naphthalen-2-yl)-anthracene;
• • 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene;
• • 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene;
• • 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane;
• • 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline;
• • Phenyl-dipyrenylphosphine Oxide;
• • Naphtahlintetracarbonsäuredianhydrid bzw. dessen Imide;
• • Perylentetracarbonsäuredianhydrid bzw. dessen Imide; und
• • Stoffen basierend auf Silolen mit einer Silacyclopentadieneinheit.

In various embodiments, the first electron transport layer 136a comprise or consist of one or more of the following materials:

• • NET-18
• 2,2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole);
• • 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP);
• • 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles;
• 1,3-bis [2- (2,2'-bipyridino-6-yl) -1,3,4-oxadiazo-5-yl] benzene;
• 4,7-diphenyl-1,10-phenanthroline (BPhen);
• • 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles;
• Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum;
• 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazol-2-yl] -2,2'-bipyridyl;
• 2-phenyl-9,10-di (naphthalen-2-yl) -anthracenes;
• 2,7-bis [2- (2,2'-bipyridino-6-yl) -1,3,4-oxadiazo-5-yl] -9,9-dimethylfluorene;
• 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene;
• 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) boranes;
• 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthrolines;
• • phenyl-dipyrenylphosphine oxides;
• Naphthalenetetracarboxylic dianhydride or its imides;
• Perylenetetracarboxylic dianhydride or its imides; and
• • Materials based on siloles with a silacyclopentadiene moiety.

The first electron transport layer 136a may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

Further, on or above the first electron transport layer 136a a first electron injection layer 138a be educated.

• • NDN-26, MgAg, Cs₂CO₃, Cs₃PO₄, Na, Ca, K, Mg, Cs, Li, LiF;
• • 2,2',2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole);
• • 2-(4-Siphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-dyphenyl-1,10-phenanthroline (BCP);
• • 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole;
• • 1,3-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene;
• • 4,7-Diphenyl-1,10-phenanthroline (BPhen);
• • 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole;
• • Bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium;
• • 6,6'-Bis[S-(biphenyl-4-yl)-1,3,4-okadiazo-2-yl]-2,2'-bipyridyl;
• • 2-phenyl-9,10-di(naphthalen-2-yl)-anthracene; 9,9-dimethylfluorene;
• • 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene;
• • 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane;
• • 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline;
• • Phenyl-dipyrenylphosphine Oxide;
• • Naphtahlintetracarbonsäuredianhydrid bzw. dessen Imide;
• • Perylentetracarbonsäuredianhydrid bzw. dessen Imide; und
• • Stoffen basierend auf Silolen mit einer Silacyclopentadieneinheit.

In various embodiments, the first electron injection layer 138a comprise or consist of one or more of the following materials:

• • NDN-26, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg, Cs, Li, LiF;
• 2,2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole);
• 2- (4-siphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-phenyl-1,10-phenanthrolines (BCP);
• • 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles;
• 1,3-bis [2- (2,2'-bipyridino-6-yl) -1,3,4-oxadiazo-5-yl] benzene;
• 4,7-diphenyl-1,10-phenanthroline (BPhen);
• • 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles;
• Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum;
• 6,6'-bis [S- (biphenyl-4-yl) -1,3,4-okadiazol-2-yl] -2,2'-bipyridyl;
• 2-phenyl-9,10-di (naphthalen-2-yl) -anthracenes; 9,9-dimethylfluorene;
• 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene;
• 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) boranes;
• 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthrolines;
• • phenyl-dipyrenylphosphine oxides;
• Naphthalenetetracarboxylic dianhydride or its imides;
• Perylenetetracarboxylic dianhydride or its imides; and
• • Materials based on siloles with a silacyclopentadiene moiety.

The first electron injection layer 138a may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm.

As described above, the (optional) hole injection layer forms 130a , the (optional) first hole transport layer 132a , the first emitter layer 134a , the (optional) first electron transport layer 136a and the (optional) first electron injection layer 138a the first organic functional layer structure 116 ,

On or above the first organic functional layer structure 116 is a carrier pair generation layer structure (CGL) 118 arranged, which will be described in more detail below.

On or above the carrier pair generation layer structure 118 In various embodiments, it is the second organic functional layer structure 120 arranged.

As in 1b In various embodiments, the second organic functional layer structure 120 a second hole injection layer 130b between the carrier pair generation layer structure 118 and the second hole transport layer 130b can be trained.

In various embodiments, the second hole injection layer 130b according to one of the embodiments of the first hole injection layer 130a be educated.

In various embodiments, the second hole injection layer 130b be optional.

In various embodiments, the second organic functional layer structure 120 a second hole transport layer 132b wherein the second hole transport layer 132b on or above (shown) the charge carrier pair generation layer structure 118 is arranged. For example, the second hole transport layer 132b in physical contact with the surface of the charge carrier pair generation layer structure 118 in other words, they can share a common interface.

In various embodiments, the second hole transport layer 132b Part of the carrier pair generation layer structure 118 be, which will be described in more detail below.

In various embodiments, the second hole transport layer 132b according to one of the embodiments of the first hole transport layer 132a be educated.

Furthermore, the second organic functional layer structure 120 a second emitter layer 134b have, on or above the second hole transport layer 132b can be arranged. The second emitter layer 134b may have the same emitter materials as the first emitter layer 134a , Alternatively, the second emitter layer 134b and the first emitter layer 134a have different emitter materials.

In various embodiments, the second emitter layer 134b be set up such that it emits electromagnetic radiation, for example light, of the same wavelengths) as the first emitter layer 134a , Alternatively, the second emitter layer 134b be configured such that it emits electromagnetic radiation, such as light, other wavelengths) than the first emitter layer 134a , The emitter materials of the second emitter layer may be materials as described above.

Other suitable emitter materials, for example inorganic dyes or phosphors, can of course be used for both the first emitter layer 134a as well as for the second emitter layer 134b be provided.

Furthermore, the second organic functional layer structure 120 a second electron transport layer 136b have, on or above the second emitter layer 134b arranged, for example, deposited, may be.

In various embodiments, the second electron transport layer 136b according to one of the embodiments of the first electron transport layer 136a be educated.

Further, on or above the second electron transport layer 136b a second electron injection layer 138b be educated.

In various embodiments, the second electron injection layer 138b according to one of the embodiments of the first electron injection layer 138a be educated.

As described above, the (optional) second hole injection layer forms 130b , the (optional) second hole transport layer 132b , the second emitter layer 134b , the (optional) second electron transport layer 136b , as well as the (optional) second electron injection layer 138b the second organic functional layer structure 120 ,

In various embodiments, an organic functional layer structure 116 . 120 Thus, for example, the sum of the thicknesses of hole transport layer (s) and emitter layer (s) and electron transport layer (s), etc. have a layer thickness of at most about 1.5 microns, for example, a layer thickness of about 1.2 microns, for example, a layer thickness of at most approximately 1 μm, for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.

Such an organic functional layer structure 116 . 120 According to the embodiments described above can also be used as an organic light-emitting diode unit 116 . 120 (OLED unit 116 . 120 ). In various embodiments, an organic functional layer structure 112 a stack of several directly stacked OLED units 116 . 120 have, each OLED unit 116 . 120 For example, a layer thickness may have a maximum of about 1.5 microns, for example, a layer thickness of about 1.2 microns, for example, a layer thickness of at most about 1 micron, for example, a layer thickness of at most about 800 nm, for example, a layer thickness of about 500 nm , for example, a layer thickness of at most about 400 nm, for example, a layer thickness of at most about 300 nm. In various embodiments, the organic functional layer structure 112 for example, a stack of two, three or four or more OLED units arranged directly above one another 116 . 120 have, in In which case, for example, the organic functional layer structure 112 a layer thickness as a function of the number of OLED units 116 . 120 may have, for example, a maximum of about 3 microns for an organic functional layer structure 112 with two OLED units 116 . 120 (Shown).

The light emitting device 100 Optionally more organic functional layers, for example. arranged on or over the one or more emitter layers or on or above the electron transport layer (s) serving to enhance the functionality and thus the efficiency of the light emitting device 100 continue to improve, for example, internal or external coupling / decoupling structures as described above.

1c shows a schematic cross-sectional view of a charge carrier pair generation layer structure 118 according to various embodiments. A carrier pair generation layered structure 118 may be a first carrier pair generation layer structure 140 , an interlayer structure 142 and a second carrier pair generation layer structure 144 as will be described in more detail below.

In various embodiments, the charge carrier pair generation layer structure 118 a first carrier pair generation layer 140 and a second carrier pair generation layer 144 exhibit. The first carrier pair generation layer 140 may be on or above the first electron transport layer 136a or the first electron injection layer 138a be arranged, for example, be in physical contact with this. The second hole injection layer 130b and / or the second hole transport layer 132b may / may be on or over the second carrier pair generation layer 144 be arranged, for example, be in physical contact with this.

In a first case, the first charge carrier pair generation layer 140 as the first electron-conducting charge carrier pair generation layer 140 be formed and the second charge carrier pair generation layer 144 as a second electron-conducting charge carrier pair generation layer 144 ,

In a second case, the first carrier pair generation layer 140 as the first electron-conducting charge carrier pair generation layer 140 be formed and the second charge carrier pair generation layer 144 as the second hole-conducting charge carrier pair generation layer 144 ,

In the first case, the separation of charge carrier pairs takes place at the interface of the second charge carrier pair generation layer 144 with the hole-conducting layer above it, for example with the second hole-injection layer 130b or the second hole transport layer 132b , In other words, when a hole-conducting carrier generation layer is formed, a second hole-injection layer may be formed 130b or a second hole transport layer 132b be optional.

The hole of the generated charge carrier pair can by means of the hole transport layer 132b to the second emitter layer 134b the second organic functional layer structure 120 be transported. The electron of the generated charge carrier pair can by means of the second charge carrier pair generation layer 144 and the first electron-conductive carrier generation layer 140 to the first emitter layer 134a the first organic functional layer structure 116 be transported.

In the second. Case, the separation of pairs of charge carriers takes place in the transition from the first charge carrier pair generation layer 140 to the second carrier pair generation layer 144 , for example via the interlayer structure 142 ,

Similar inorganic layers at high temperatures in the manufacture of semiconductor devices, for example, at temperatures greater than 200 ° C, organic layers during production and in operation at temperatures below 100 ° C in other layers diffuse (partial layer interdiffusion), z. B. parts of the second charge carrier pair generation layer 144 into the first charge carrier pair generation layer 140 a carrier pair generation layer structure 118 and vice versa.

When an electric field is applied to the charge carrier-generating layer structure, a voltage drop across this layer structure can be measured by means of the layer interdiffusion. This voltage drop increases with operating time because the diffusion of conductive organic substances can be directed in an electric field. This can limit the operating life of organic optoelectronic devices.

In order to suppress the partial layer interdiffusion (that is, to achieve a clear barrier effect) can be between the individual organic layers, for. Between the first carrier pair generation layer 140 and the second carrier pair generation layer 144 , the interlayer structure 142 be inserted.

The interlayer structure prevents the layer interdiffusion, for example of dopants, matrix substances or intrinsically conductive substances.

Furthermore, the interlayer structure may be an abreaction of the first electron-conducting charge carrier pair generation layer 140 with the second hole-conducting charge carrier pair generation layer 144 prevent, ie the interlayer structure 142 forms a reaction barrier. Furthermore, the interlayer structure 142 the interface roughness between the second electron-carrier charge carrier generation layer 144 and the first electron-conductive carrier generation layer 140 by reducing, compensating for the surface roughness of the second electron-carrier charge carrier generation layer by means of the interlayer structure.

In various embodiments, the first electron-conducting charge carrier pair generation layer 140 be composed of several substances, so for example a mixture of substances, or from a single substance (for this reason, the first electron-conducting charge carrier pair-generation layer 140 also as undoped first electron-conducting charge carrier pair generation layer 140 be designated).

In various embodiments, the first electron-conducting charge carrier pair generation layer 140 a layer thickness in a range of about 1 nm to about 500 nm, for example in a range of about 3 nm to about 100 nm, for example in a range of about 10 nm to about 90 nm, for example in a range of about 20 nm about 80 nm, for example in a range of about 30 nm to about 70 nm, for example in a range of about 40 nm to about 60 nm, for example, a layer thickness of about 50 nm.

The fabric containing the first electron-conducting charge carrier pair generation layer 140 forms, that is, for example, the substance from which the first electron-conducting charge carrier pair-generation layer 140 For example, a high electron conductivity (e.g., an electron conductivity on the order of, for example, better than about 10 ^-7 S / m, for example, better than about 10 ^-6 S / m, for example, better than about 10 ^-5 S / m.

Furthermore, the substance of the first intrinsic or n-doped electron-conducting charge carrier pair generation layer 140 have a work function in an amount of about 4.5 eV or greater, for example, up to about 5.5 eV, for example, up to about 5 eV; and have a low absorption of visible light.

• • NET-18
• • 2,2',2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole);
• • 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP);
• • 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole;
• • 1,3-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene;
• • 4,7-Diphenyl-1,10-phenanthroline (BPhen);
• • 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole;
• • Bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium;
• • 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl;
• • 2-phenyl-9,10-di(naphthalen-2-yl)-anthracene;
• • 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene;
• • 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene;
• • 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline;
• • Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane;
• • 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline;
• • Phenyl-dipyrenylphosphine Oxide;
• • Naphtahlintetracarbonsäuredianhydrid bzw. dessen Imide;
• • Perylentetracarbonsäuredianhydrid bzw. dessen Imide; und
• • Stoffen basierend auf Silolen mit einer Silacyclopentadieneinheit.

In various embodiments, as the substance of the first electron-conducting charge carrier pair generation layer 140 Any substance meeting these conditions must be provided for. In the case that the second carrier pair generation layer 144 is the first electron-conducting charge carrier pair generation layer 140 , For example, have or be formed from one of the following materials: In various embodiments, the first charge carrier pair generation layer 140 have or consist of an intrinsically electron-conducting substance. In various embodiments, the material of the second intrinsically electron-conducting charge carrier pair generation layer may comprise or be formed from one of the following: NDN-26, NDN-1, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K , Mg, Cs, Li, LiF. In various embodiments, the first charge carrier pair generation layer 140 be formed from a mixture of matrix and n-type dopant. In various embodiments, the matrix of the first carrier pair generation layer 140 have or consist of one of the following substances:

• • NET-18
• 2,2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole);
• • 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP);
• • 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles;
• 1,3-bis [2- (2,2'-bipyridino-6-yl) -1,3,4-oxadiazo-5-yl] benzene;
• 4,7-diphenyl-1,10-phenanthroline (BPhen);
• • 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles;
• Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum;
• 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazol-2-yl] -2,2'-bipyridyl;
• 2-phenyl-9,10-di (naphthalen-2-yl) -anthracenes;
• 2,7-bis [2- (2,2'-bipyridino-6-yl) -1,3,4-oxadiazo-5-yl] -9,9-dimethylfluorene;
• 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene;
• 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthrolines;
• Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) boranes;
• 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthrolines;
• • phenyl-dipyrenylphosphine oxides;
• Naphthalenetetracarboxylic dianhydride or its imides;
• Perylenetetracarboxylic dianhydride or its imides; and
• • Materials based on siloles with a silacyclopentadiene moiety.

In various embodiments, the dopant of the first electron-conducting charge carrier pair generation layer 140 one or more of the following: NDN-26, NDN-1, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg, Cs, Li, LiF.

In the event that the second charge carrier pair generation layer 144 hole-conducting, the first electron-conducting charge carrier pair generation layer 140 , For example, comprise any of the following or may be formed from: HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc.

In various embodiments, the second carrier pair generation layer 144 a layer thickness in a range of about 1 nm to about 500 nm, for example in a range of about 3 nm to about 100 nm, for example in a range of about 10 nm to about 90 nm, for example in a range of about 20 nm about 80 nm, for example in a range of about 30 nm to about 70 nm, for example in a range of about 40 nm to about 60 nm, for example, a layer thickness of about 50 nm.

In various embodiments, the second carrier pair generation layer 144 from several substances, so for example a mixture of substances, or also be composed of a single substance (for this reason, the second charge carrier pair-generation layer 144 also as an undoped second carrier pair generation layer 144 be designated).

In yet another embodiment, the material of the second electron-carrier charge carrier generation layer may have a transmission greater than about 90% in a wavelength range of about 450 nm to about 650 nm.

In the case of an electron-conducting second charge carrier pair generation layer 144 may be the second carrier pair generation layer 144 a substance or mixture of high electrical conductivity and lowest unoccupied molecular orbital (LUMO), which is approximately equal in energy to the valence band (or Highest Occupied Molecule Orbital, HOMO) of the directly or indirectly adjacent hole transport layer 132b and the conduction band of the first electron-conducting carrier generation layer 140 or the valence band of the first hole-conducting carrier generation layer 140 is trained.

The fabric containing the second electron-conducting charge carrier pair generation layer 144 forms, that is, for example, the substance from which the second electron-conducting charge carrier pair generation layer 144 can have a high electron conductivity, for example, a conductivity of the order of, for example, in a range of about 10 ^-7 S / m to about 10 S / m or better.

Furthermore, the substance of the second intrinsic and / or n-doped electron-conducting charge carrier pair generation layer 144 have a work function of about 3.0 eV or smaller, and have low visible light absorption. In various embodiments, as the substance of the second electron-conducting charge carrier pair generation layer 144 material, or any substance can be provided that fulfills these and the above conditions, for example, HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP -9, Bi (III) pFBz, F16CuPc.

In the case of a hole-conducting second charge carrier pair generation layer 144 may be the second carrier pair generation layer 144 a substance or mixture of substances with high electrical conductivity and a valence band (Highest Occupied Molecule Orbital, HOMO) that is approximately equal in energy to the valence band (Highest Occupied Molecule Orbital, HOMO) of the directly or indirectly adjacent hole transport layer 132b and the conduction band (Lowest Unoccupied Molecule Orbital, LUMO) of the first electron-conducting carrier generation layer 140 or the valence band (Highest Occupied Molecule Orbital, HOMO) of the first hole-conducting carrier generation layer 140 is trained.

The fabric containing the second hole-carrier charge generation layer 144 forms, that is, for example, the substance from which the second hole-conducting charge carrier pair generation layer 144 For example, a high conductivity (for example, a conductivity in the range of, for example, about 10 ^-5 S / m to about 10 ^-3 S / m or better.

Furthermore, the substance of the second intrinsic and / or p-doped hole-conducting charge carrier pair generation layer 144 a work function with an amount of about 4.5 eV or greater, for example, to about 5.5 eV, for example, to about 5 eV; and have a low absorption of visible light.

• • 1-TNATA
• • NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidin);
• • beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidin); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin);
• • Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluoren);
• • 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluor;
• • N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidin;
• • 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluoren;
• • 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluoren;
• • 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluoren;
• • Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexan;
• • 2,2',7,7'-tetra(N,N-di-tolyl)amino-spiro-bifluoren; und
• • N,N,N',N'-tetra-naphthalen-2-yl-benzidin.

In various embodiments, as the substance of the second hole-conducting charge carrier pair generation layer 144 any material or substance satisfying those conditions, for example:

• • 1-TNATA
• NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine);
• Beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine);
• Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene);
• 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene;
• 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene;
• • 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro;
• N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) -benzidine;
• • 2,7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene;
• 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene;
• 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene;
• Di- [4- (N, N-ditolylamino) -phenyl] cyclohexane;
• 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and
• • N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

In various embodiments, the second hole-conducting charge carrier pair generation layer 144 be formed from a mixture of matrix and p-type dopant.

• • 1-TNATA
• • NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidin);
• • beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidin); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidin);
• • Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluoren);
• • DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluoren);
• • Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluoren);
• • 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluoren;
• • 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluor;
• • N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidin;
• • 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluoren;
• • 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluoren;
• • 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluoren;
• • Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexan;
• • 2,2',7,7'-tetra(N,N-di-tolyl)amino-spiro-bifluoren; und
• • N,N,N',N'-tetra-naphthalen-2-yl-benzidin.

In various embodiments, the matrix of the second hole-conducting charge carrier pair generation layer 144 have or consist of one of the following substances:

• • 1-TNATA
• NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine);
• Beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine);
• Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene);
• DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene);
• Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene);
• 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene;
• 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene;
• • 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro;
• N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) -benzidine;
• • 2,7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene;
• 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene;
• 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene;
• Di- [4- (N, N-ditolylamino) -phenyl] cyclohexane;
• 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and
• • N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

In various embodiments, the dopant may be the second hole-conducting charge carrier generation layer 144 have any of the following or may be formed from: HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc.

In various embodiments, the second hole-conducting charge carrier pair generation layer 144 have or consist of an intrinsically electron-conducting substance.

In various embodiments, the second intrinsically hole-conducting charge carrier pair generation layer 144 have any of the following or may be formed from: HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc.

The interlayer structure 142 may have a layer thickness in a range of about one monolayer to about 50 nm, for example, in a range of about 1 nm to about 10 nm, for example, in a range of about 1 nm to about 5 nm, for example, a layer thickness of about 3 nm.

The charge carrier line through the interlayer structure 142 can be done tunnelling. The substance or the substance mixture of the interlayer structure 142 may be an electrical insulator at least in the direction of current flow in a tunneling charge carrier line. In other words, the HOMO of the electrically insulating substance of the interlayer structure 142 may be higher than the LUMO of the directly adjacent electron-conducting charge carrier pair generation layer and higher than the HOMO of the directly adjacent hole-conducting charge carrier pair generation layer. This allows a tunneling current through the interlayer structure 142 respectively.

In various embodiments, the interlayer structure 142 Graphene or be formed from it.

In one embodiment, an interlayer structure 142 having graphene or formed therefrom, having a low absorption of light, for example, by having the graphene layer in a thickness ranging from about one monolayer to about five monolayers.

In one embodiment, an interlayer structure 142 having graphene or formed therefrom, have a high electrical conductivity for holes and electrons.

In one embodiment, an interlayer structure 142 having or being formed from graphene or silicene, have very low permeability to gases, for example even helium, and liquids, for example by the interlayer structure 142 forms an at least two-dimensional, ie two-dimensional crystal

In yet another embodiment, the interlayer structure 142 have a heterogeneous layer cross-section.

In yet another embodiment, the heterogeneous layer cross-section may have regions of different crystallinity of the substance or of the substance mixture or be formed by these.

The different heterogeneous regions may be partial or complete crystallizations in an amorphous portion of the substance or mixture of the intermediate layer structure 142 be.

In yet another embodiment, the heterogeneous layer cross-section may have regions of different crystal orientation of the substance or of the substance mixture or be formed by these.

The barrier effect of the interlayer structure 142 may be due to an at least local orientation of the molecules of the interlayer structure 142 For example, if the longest crystal axis of the crystallized regions are parallel to at least one interface through the interlayer structure 142 connected first charge carrier pair generation layer and second electron-conducting charge carrier pair generation layer is oriented.

In yet another embodiment, the longest crystal axis of the crystallized substance or the crystallized substance mixture of the interlayer structure 142 parallel to the interface of the interlayer structure 142 be oriented with the second charge carrier pair generation layer.

In yet another embodiment, the longest crystal axis of the crystallized substance or the crystallized substance mixture of the interlayer structure 142 parallel to the interface of the interlayer structure 142 be oriented with the first charge carrier pair generation layer.

In yet another embodiment, the heterogeneous layer cross-section of the interlayer structure 142 two or more layers each of a substance of the substance mixture of the interlayer structure 142 or different physical structures of the substance of the interlayer structure 142 exhibit.

In yet another embodiment, the physical structure distinction may include at least one of the following parameters: the density of the substance or mixture, the crystallinity of the substance or mixture, the crystal orientation of the substance or mixture, and / or the local doping density of the substance or mixture ,

In yet another embodiment, the interlayer structure 142 have a layer thickness of about one monolayer to about 20 nm.

In yet another embodiment, the common interface of the interlayer structure 142 with the first charge carrier pair generation layer, plane parallelism to the common interface of the interlayer structure 142 having the second carrier pair generation layer.

In yet another embodiment, the interlayer structure should 142 the optoelectronic efficiency of the optoelectronic component to a maximum of about 10% influence in one Wavelength range from about 450 nm to about 650 nm.

In yet another embodiment, the interlayer structure 142 may have a transmission greater than about 90% in the wavelength range of about 450 nm to about 650 nm.

In yet another embodiment, the layer cross-section of the interlayer structure 142 structurally stable up to a temperature of up to about 120 ° C.

The formation of an interlayer structure of graphene may be formed as in FIG S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 ; SV Morozov et al., Physical Review Letters 100 (2008) 016602 ; S. Kumar et al., Nanoscale Research Letters 6 (2011) 390 is shown.

Out S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 It can be seen that the transmission of an interlayer structure of graphene increases with decreasing layer thickness of the graphene layer. Furthermore, it can be seen that an interlayer structure with a layer thickness of three monolayers or less has a transmission of electromagnetic radiation in the visible wavelength range of more than 90%, with a monolayer of graphene in the wavelength range of electromagnetic radiation of approximately 550 nm even a transmission of more than 97%. has or is formed therefrom.

The formation of an interlayer structure of silicas can be formed as in FIG P. Vogt et al. Physical Review Letters 108 (2012) 155501 wherein the transfer to an organic substrate, for example, according to the in S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 shown method can be done.

In one embodiment, a graphene layer is located on a large-area polymer carrier. From this polymer carrier, the graphene layer becomes one of the charge carrier pair generation layers 140 . 144 transferred in a thermal printing process. Subsequently, the further layers of the optoelectronic component can be applied by means of vacuum deposition.

2a , b shows a schematic cross-sectional view of a charge carrier pair generation layer structure of an optoelectronic component according to various embodiments.

2a shows a schematic cross-sectional view of an embodiment of a charge carrier pair-generation layer structure, but should not have any limiting character. For ease of illustration, the organic functional layer structures were not shown.

As a substrate 202 may be a hermetically sealed electrically conductive substrate 202 used, for example, a glass carrier 102 with a layer of ITO 110 (not shown).

On the substrate 202 may be an undoped electron-conducting layer 204 be formed, for example as an electron injection layer 138a and / or electron transport layer 136a For example, in one too 1b inverted arrangement of the layers. The first emitter layer 134a (not shown) on or over the electron-conducting layer 204 may according to one of the embodiments of the first emitter layer 134a the descriptions of the 1b be educated.

Over the electron-conducting layer 204 may be the first electron-conducting charge carrier pair generation layer 140 be educated. The first electron-conducting charge carrier pair generation layer 140 In various embodiments, it may have a matrix in which an n-type dopant is distributed.

On the first carrier pair generation layer 140 can be an interlayer structure 142 be educated.

On the interlayer structure 142 may be a second hole-carrier charge carrier generation layer 144 be educated. The second carrier pair generation layer 144 In various embodiments, it may have a matrix in which a p-type dopant is distributed.

The second emitter layer 134b (not shown) on or above the second carrier pair generation layer 144 may according to one of the embodiments of the second emitter layer 134b the descriptions of the 1b be educated.

On the second carrier pair generation layer 144 may be an undoped hole-conducting layer 206 be formed, for example as a hole injection layer 130b and / or hole transport layer 132b (please refer 1b ).

On or above the undoped hole-conducting layer 206 can the second electrode 114 be formed, for example in the form of a metal layer 114 or metallization 114 ,

• – undotierte elektronenleitende Schicht 204: Net-18 mit einer Schichtdicke von ungefähr 100 nm;
• – erste elektronenleitende Ladungsträgerpaar-Erzeugung-Schicht 140: NDN-26 Dotierstoff in einer NET-18 Matrix mit einer Schichtdicke von ungefähr 25 nm, wobei das Stoffgemisch einen Anteil von ungefähr 8 Gew.-% an NDN-26 aufweist;
• – Zwischenschicht-Struktur 142: Graphen mit einer Schichtdicke von ungefähr einer Monolage;
• – zweite lochleitende Ladungsträgerpaar-Erzeugung-Schicht 144: Bi(III)pFBz Dotierstoff in einer HTM-081 Matrix mit einer Schichtdicke von ungefähr 25 nm, wobei das Stoffgemisch einen Anteil von ungefähr 2 Gew.-% an Bi(III)pFBz aufweist; und
• – undotierte lochleitende Schicht 206: HTM-081 mit einer Schichtdicke von ungefähr 100 nm.

In one embodiment ( 2 B ) to the embodiment in 2a , which, however, should not have any limiting character, the optoelectronic component 100 following layers:

• - undoped electron-conducting layer 204 : Net-18 with a layer thickness of approximately 100 nm;
• - First electron-conducting charge carrier pair generation layer 140 : NDN-26 dopant in a NET-18 matrix having a layer thickness of about 25 nm, the mixture comprising about 8% by weight of NDN-26;
• - Interlayer structure 142 : Graphene with a layer thickness of approximately one monolayer;
• Second hole-conducting charge carrier pair generation layer 144 : Bi (III) pFBz dopant in an HTM-081 matrix having a layer thickness of about 25 nm, the mixture comprising about 2% by weight of Bi (III) pFBz; and
• - undoped hole-conducting layer 206 : HTM-081 with a layer thickness of approximately 100 nm.

Furthermore, the metallization 114 be formed as a silver layer.

3a , b shows a schematic cross-sectional view of a charge carrier pair generation layer structure of an optoelectronic component according to various embodiments.

3a shows a schematic cross-sectional view of an embodiment of a charge carrier pair-generation layer structure, but should not have any limiting character. For ease of illustration, the organic functional layer structures were not shown.

As a substrate 202 may be a hermetically sealed electrically conductive substrate 202 used, for example, a glass carrier 102 with a layer of ITO 110 (not shown).

On the substrate 202 can be an undated electron-conducting layer 204 be formed, for example as an electron injection layer 138a and / or electron transport layer 136a For example, in one too 1b inverted arrangement of the layers. The first emitter layer 134a (not shown) on or over the electron-conducting layer 204 may according to one of the embodiments of the first emitter layer 134a the descriptions of the 1b be educated.

Over the electron-conducting layer 204 may be the first electron-conducting charge carrier pair generation layer 140 be educated. The first carrier pair generation layer 140 may be formed in various embodiments of an intrinsic (undated) electron-conducting substance.

On the first carrier pair generation layer 140 can be an interlayer structure 142 be educated.

On the interlayer structure 142 may be a second electron-conducting charge carrier pair generation layer 144 be educated. The second carrier pair generation layer 144 may be formed in various embodiments of an intrinsic (undated) hole-conducting substance.

The second emitter layer 134b (not shown) on or above the second carrier pair generation layer 144 may according to one of the embodiments of the second emitter layer 134b the descriptions of the 1b be educated.

On the second carrier pair generation layer 144 may be an undoped hole-conducting layer 206 be formed, for example as a hole injection layer 130b and / or hole transport layer 132b (please refer 1b ).

On or above the undoped hole-conducting layer 206 can the second electrode 114 be formed, for example in the form of a metal layer 114 or metallization 114 ,

• – undotierte elektronenleitende Schicht 204: Net-18 mit einer Schichtdicke von ungefähr 100 nm;
• – erste elektronenleitende Ladungsträgerpaar-Erzeugung-Schicht 140: NDN-26 mit einer Schichtdicke von ungefähr 10 nm;
• – Zwischenschicht-Struktur 142: Graphen mit einer Schichtdicke von ungefähr einer Monolage;
• – zweite elektronenleitende Ladungsträgerpaar-Erzeugung-Schicht 140: HAT-CN mit einer Schichtdicke von ungefähr 5 nm; und
• – undotierte lochleitende Schicht 206: HTM-508 mit einer Schichtdicke von ungefähr 100 nm.

In one embodiment ( 3b ) to the embodiment in 3a , which, however, should not have any limiting character, the optoelectronic device 100 following layers:

• - undoped electron-conducting layer 204 : Net-18 with a layer thickness of approximately 100 nm;
• - First electron-conducting charge carrier pair generation layer 140 : NDN-26 with a layer thickness of about 10 nm;
• - Interlayer structure 142 : Graphene with a layer thickness of approximately one monolayer;
• Second electron-conducting charge carrier pair generation layer 140 : HAT-CN with a layer thickness of about 5 nm; and
• - undoped hole-conducting layer 206 : HTM-508 with a layer thickness of approximately 100 nm.

Furthermore, the metallization 114 be formed as a silver layer.

In one embodiment of the embodiment in 3a (not shown) may also or instead of an interlayer structure 142 between the second carrier pair generation layer 144 and the undated hole-conducting layer 206 be educated. In this case, the undated hole-conducting layer 206 be referred to as the second charge carrier pair generation layer and the illustrated second charge carrier pair generation layer as the first charge carrier pair generation layer. In other words, depending on the considered interlayer structure in a charge carrier pair generation structure having a plurality of interlayer structures at different positions, for example, a second electron-carrier charge carrier generation layer may have the first electron-conductive charge carrier generation layer with respect to an interlayer structure. Be layer of another interlayer structure. However, the charge carrier separation at an interface of a layer called a carrier pair generation layer formed in the carrier pair generation structure is optional. A charge carrier transport layer and / or a charge carrier injection layer may also be referred to as a charge carrier pair generation layer if it is formed in the charge carrier pair generation structure, for example by an interlayer structure being adjacent to the charge carrier transport layer and / or a charge carrier injection layer.

4a shows a schematic cross-sectional view of a conventional charge carrier pair generation layer structure of an optoelectronic component.

As a substrate 402 Conventionally, a hermetically sealed electrically conductive substrate 402 used, for example, a glass support with a layer of ITO.

Above the substrate 402 is an undated electron-conducting layer 404 educated. Over the electron-conducting layer 404 is a first carrier pair generation layer 406 educated. On the first carrier pair generation layer 406 is an intermediate layer 408 educated. On the interlayer structure 408 is a second carrier pair generation layer 410 be educated. On the second carrier pair generation layer 410 is an undoped hole-conducting layer 412 educated. Above the undated hole-conducting layer 412 is a second electrode 414 educated.

4b shows a table of conventionally used materials for the hole-conducting layer 412 , the electron-conducting layer 404 and the intermediate layer 408 ,

The illustrated materials of the hole-conducting layer 412 are conventionally used for an electron block layer and a hole transport layer, respectively.

The illustrated materials of the electron-conducting layer 404 are conventionally used for a hole blocker layer and an electron transport layer, respectively.

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided with which it is possible to form a more efficient and stable optoelectronic component.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited non-patent literature

• S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 [0010]
• SV Morozov et al., Physical Review Letters 100 (2008) 016602 [0010]
• S. Kumar et al., Nanoscale Research Letters 6 (2011) 390 [0010]
• P. Vogt et al., Physical Review Letters 108 (2012) 155501 [0011]
• Kröger et al., Physical Review B 75 (2007) 235321 [0012]
• Kröger, M. et al., Physical Review B 75 (2007) 235321 [0085]
• S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 [0249]
• SV Morozov et al., Physical Review Letters 100 (2008) 016602 [0249]
• S. Kumar et al., Nanoscale Research Letters 6 (2011) 390 [0249]
• S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 [0250]
• P. Vogt et al. Physical Review Letters 108 (2012) 155501 [0251]
• S. Bae et al., Nature Nanotechnology 5 (2010) 574-578 [0251]

Claims (13)

Optoelectronic component ( 100 ), comprising: a first organic functional layer structure ( 116 ); A second organic functional layer structure ( 120 ); and a charge carrier pair generation layer structure ( 118 ) between the first organic functional layer structure ( 116 ) and the second organic functional layer structure ( 120 ), wherein the charge carrier pair generation layer structure ( 118 ): - a first charge carrier pair generation layer ( 140 ); A second charge carrier pair generation layer ( 144 ); and an interlayer structure ( 142 ) between the first charge carrier pair generation layer ( 140 ); and the second carrier pair generation layer (FIG. 144 ); and - wherein the interlayer structure ( 142 ) has at least one layer with a flat-periodic, honeycomb-shaped lattice structure, and - wherein the interlayer structure ( 142 ) has or is formed of a floating electrical potential. Optoelectronic component ( 100 ) according to claim 1, wherein the interlayer structure ( 142 ) comprises or is formed from at least one of the following substances: carbon, silicon, germanium. Optoelectronic component ( 100 ) according to one of claims 1 or 2, wherein the interlayer structure ( 142 ) comprises or is formed from a graphene layer. Optoelectronic component ( 100 ) according to one of claims 1 or 2, wherein the interlayer structure ( 142 ) is formed having two or more sub-layers. Optoelectronic component ( 100 ) according to claim 4, wherein the interlayer structure ( 142 ) comprises or is formed from a graphite layer. Optoelectronic component ( 100 ) according to one of claims 1 or 2, wherein the interlayer structure ( 142 ) comprises or is formed from a silicene layer. Optoelectronic component ( 100 ) according to one of claims 1 to 6, wherein the first charge carrier pair generation layer ( 140 ) has a dopant in a matrix. Method for producing an optoelectronic component ( 100 ), the method comprising: • forming a first organic functional layer structure ( 116 ); Forming a carrier pair generation layer structure ( 118 ) over or on the first organic functional layer structure ( 116 ); and • forming a second organic functional layer structure ( 120 ) over or on the charge carrier pair generation layer structure ( 118 ), wherein forming the carrier pair generation layer structure ( 118 ): - forming a second charge carrier pair generation layer ( 144 ); Forming an interlayer structure ( 142 ) over or on the second carrier pair generation layer ( 144 ); - wherein the interlayer structure ( 142 ) has at least one layer with a flat periodic honeycomb lattice structure, wherein the interlayer structure ( 142 ) has a floating electrical potential; and - forming a first charge carrier pair generation layer ( 140 ) above or on the interlayer structure ( 142 ). Method according to claim 8, wherein the interlayer structure ( 142 ) comprises or is formed from at least one of the following substances: carbon, silicon, germanium. Method according to one of claims 8 or 9, wherein the interlayer structure ( 142 ) is formed or formed from having a graphene layer. Method according to one of claims 8 or 9, wherein the interlayer structure ( 142 ) is formed or formed from having two or more sub-layers. The method of claim 11, wherein the interlayer structure ( 142 ) Graphite is formed or formed therefrom. Method according to one of claims 8 or 9, wherein the interlayer structure ( 142 ) is formed having a silicic layer or is formed therefrom.

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