DE112015001031B4 - Optoelectronic component and method for producing an optoelectronic component - Google Patents

Abstract

Optoelectronic component (10), with - a carrier (12), - a first electrode (20) above the carrier (12), - an organic functional layer structure (22) above the first electrode (20), - a second electrode (23) having a first hardness above the organic functional layer structure (22), - a particle trapping layer (50) having a second hardness above the second electrode (23), and - an encapsulation (40) with an encapsulation layer structure (24) having a third hardness, an adhesive layer (36) and a cover body (38) above the particle trapping layer (50), wherein the encapsulation layer structure (24) adjoins the particle trapping layer (50) and the cover body (38) is glued to the encapsulation layer structure (24) above the particle trapping layer (50) by means of the adhesive layer (36), - wherein the second hardness is less than the first hardness, wherein the second hardness is less as the third hardness, and wherein the particle trapping layer (50) comprises at least one material selected from the following group: plastic, a foam, a nanofoam, an aerogel, a nanocomposite, a paste, a jelly, colloids.

Description

The invention relates to an optoelectronic component and a method for producing an optoelectronic component.

The following publications disclose an optoelectronic device: EN 10 2013 109 646 A1 , US 2013 / 0 126 932 A1 , US 2007 / 0 278 950 A1 , US 2007 / 0 132 381 A1 .

Organic-based optoelectronic components, such as organic light emitting diodes (OLEDs) or organic solar cells, are becoming increasingly popular. For example, OLEDs are increasingly being used in general lighting, for example as a surface light source. An optoelectronic component, such as an OLED, can have an anode and a cathode with an organic functional layer system in between. The organic functional layer system can have one or more emitter layers in which electromagnetic radiation is generated, a charge carrier pair generation layer structure made up of two or more charge carrier pair generation layers (“charge generating layer” (CGL) for generating charge carrier pairs, one or more electron blocking layers, also referred to as hole transport layer(s) (“HTL”), and one or more hole blocking layers, also referred to as electron transport layers (“ETL”), to direct the flow of current.

Organic light-emitting diodes as surface light sources are very susceptible to 3-dimensional interference, such as particles. Optoelectronic components that have encapsulation are particularly susceptible in this regard. Such encapsulation can, for example, have an encapsulation layer structure, for example with a thin-film encapsulation and/or with different layer sequences, and/or a cover body, for example a protective layer laminated onto the encapsulation layer structure, which for example comprises glass. The reason for this is that there is an increased susceptibility to particles due to conventional process control, for example. For example, interference particles can get between the encapsulation and the cathode and/or if pressure is applied from the outside to the area in which the interference particles are arranged, the cathode and/or the organic functional layer structure and/or the encapsulation can be damaged and/or a short circuit can occur between the cathode and the anode via the interference particle, for example by pressing the cathode onto the anode.

For example, the transition from an Al cathode to thin film encapsulation (TFE) can be critical because a particle on the Al cathode can be pressed into the organic layers by the soft aluminum of the Al cathode with a hardness of, for example, 23 to 45 HV10 using a TFE layer made of, for example, SiN with a hardness of, for example, 1600 to 2600 HV10, which can lead to spontaneous failure and/or a short circuit and/or a latent short circuit. A latent short circuit can, for example, lead to a real short circuit after an indefinite period of time, for example 100 hours. The unit "HV10" indicates that the Vickers hardness is measured with a test force of 10 kiloponds. As an alternative to the Vickers hardness, the hardness can be converted using known formulas and specified in other units.

When improving particle susceptibility, the following boundary conditions with regard to product specifications and process control for organic optoelectronic components must be taken into account and should be met at the same time if possible: Optoelectronic parameters such as voltage, luminance, efficiency and/or color coordinates; the service life and in particular the luminance, color shifts and/or voltage changes over the service life; the shelf life (“shelf life” according to specification); the robustness, in particular with regard to spontaneous failures; the mechanical stability, for example with regard to layer detachment and/or resistance to temperature changes; the freedom of design; process control that is as particle-free as possible if negative effects on the optoelectronic component are possible, which can reduce rejects; short process times, fast cycle times, which means that unit costs are low and/or less material is used; as few systems and/or system changes as possible, which means that low investments are required, but which can also lead to higher rejects. The points listed above interact and can partially contradict each other: for example, the storage stability can be significantly increased by increasing the TFE layer thickness, but at the same time the service life can decrease, for example the cathode can detach due to stress effects, which has a negative effect on the mechanical stability of the optoelectronic component.

• - Aufbringen einer dicken CVD-Schicht bis 5 µm als Verkapselungs-Schichtstruktur, was vorteilhaft eine Steigerung von B10 Lagerungswerten („B10“ gibt die Lagerzeit an, nach der 10% der Bauelemente ausgefallen sind) bei partikelbelasteten Prozessen im EOL (End Of Life) ermöglicht, was jedoch nachteilig die Prozesszeit aufgrund niedriger Prozesstemperaturen verlängern kann und/oder negative Auswirkung auf Lebensdauer und mechanische Stabilität aufgrund von Verspannungen der CVD Schicht haben kann und einen Verlust von Leuchtfläche mit sich bringen kann;
• - Diskretisierung der Leuchtfläche und Integration von integrierten Sicherungselementen, was nachteilig einen erheblichen Zusatzaufwand bei der dafür nötigen Substratstrukturierung und/oder eine hohe Justagegenauigkeit und/oder hohe Investition in Justageeinheiten im FOL (Front Of Line) auf Substratebene erfordert;
• - Vollautomatisierung einer Prozesslinie zur Reduzierung der Partikellast, was jedoch nachteilig hohe Investitionen erfordern kann;
• - wenige unterschiedliche Prozesse und/oder wenig Wechsel der Anlagen, wodurch jedoch zumindest teilweise Lagerdauerspezifikationen nur schwer oder gar nicht erfüllt werden können, beispielsweise ist eine dünne CVD (Chemical Vapor Deposition)-SiN-Schicht allein ohne ALD (Atomic Layer Deposition)-Nanolaminatschicht in kostengünstiger kurzer Prozesszeit bei zugelassener Prozesstemperatur nur schwer oder gar nicht realisierbar;
• - eine Cavity-Verkapselung, die in gewissem Maße das Eindrücken von Partikeln verhindern kann, jedoch kann das entsprechende Herstellungsverfahren teuer sein, da in der Regel Gettermaterialien verwendet werden müssen, um einen hohen Ausschuss zu verhindern, und/oder Glaslote zum Ausbilder der Cavity-Verkapselung teuer sein können;
• - eine dicke und/oder nasse Löcherinjektionsschicht kann die Robustheit erhöhen, kann jedoch die optoelektronischen Parameter verschlechtern und/oder negative Auswirkungen auf die Lebensdauer und die Leistungsfähigkeit haben und/oder nach einem nasschemischem Prozess kann die Partikelanfälligkeit aufgrund der Anlagenwechsel erhalten bleiben und/oder eine dicke HIL kann hohe Kosten erfordern;
• - eine TFE Schicht mit Schichtfolgestrukturen aus CVD Prozessen, beispielsweise SiNCBO_x Schichtfolgen und/oder MLD-Strukturen, wobei eine hohe Lagerbeständigkeit allein mit diesen Schichten in annehmbarer Prozesszeit nur schwer oder nicht möglich ist, auch bei Ausnutzung des Labyrintheffekts, was zu hohen Kosten führt, und/oder wobei eine fehlende Anpassung an die Kathode zu einer Schichtablösungen, d.h. einer reduzierten mechanischen Stabilität, führen kann und/oder wobei dicke Schichten im µm-Bereich aufgrund der Verspannungen zu Kathodenablösungen neigen;
• - Glaslamination als Verkapselung, wobei die direkte Auflamination das Risiko für das Partikeleindrücken in die optisch und/oder elektrisch aktive Schichtstruktur erhöhen kann.

For example, the following measures are known to increase the robustness of conventional optoelectronic components that are to be encapsulated:

• - Application of a thick CVD layer up to 5 µm as an encapsulation layer structure, which is advantageous allows an increase in B10 storage values (“B10” indicates the storage time after which 10% of the components have failed) in particle-laden processes at EOL (End Of Life), which, however, can disadvantageously extend the process time due to low process temperatures and/or have a negative impact on service life and mechanical stability due to stresses in the CVD layer and can result in a loss of luminous area;
• - Discretization of the luminous area and integration of integrated security elements, which disadvantageously requires considerable additional effort in the necessary substrate structuring and/or a high level of alignment accuracy and/or high investment in alignment units in the FOL (Front Of Line) at substrate level;
• - Full automation of a process line to reduce particle load, which may, however, require high investments;
• - few different processes and/or few changes of equipment, which, however, make it difficult or impossible to meet at least some storage time specifications, for example, a thin CVD (Chemical Vapor Deposition) SiN layer alone without an ALD (Atomic Layer Deposition) nanolaminate layer is difficult or impossible to realize in a cost-effective short process time at the permitted process temperature;
• - a cavity encapsulation that can prevent particle indentation to some extent, but the corresponding manufacturing process can be expensive since getter materials usually have to be used to prevent high reject rates and/or glass solders to form the cavity encapsulation can be expensive;
• - a thick and/or wet hole injection layer may increase robustness but may degrade optoelectronic parameters and/or have negative impacts on lifetime and performance and/or after a wet chemical process, particle susceptibility may remain due to equipment changes and/or a thick HIL may require high costs;
• - a TFE layer with layer sequence structures from CVD processes, for example SiNCBO _x layer sequences and/or MLD structures, whereby a high storage stability with these layers alone is difficult or not possible in an acceptable process time, even when utilizing the labyrinth effect, which leads to high costs, and/or whereby a lack of adaptation to the cathode can lead to layer detachment, i.e. reduced mechanical stability, and/or whereby thick layers in the µm range tend to cathode detachment due to the stresses;
• - Glass lamination as encapsulation, whereby direct lamination can increase the risk of particles being pressed into the optically and/or electrically active layer structure.

In various embodiments, an optoelectronic component is provided which is particularly robust, which is particularly efficient, which has a long service life and storage stability and/or which can be produced easily, inexpensively and/or quickly.

In various embodiments, a method for producing an optoelectronic component is provided which contributes to the optoelectronic component being particularly robust and/or efficient and/or having a long service life and storage stability, and/or which is simple, cost-effective and/or quick to carry out.

An optoelectronic component is provided. The optoelectronic component has a carrier and a first electrode above the carrier. An organic functional layer structure is formed above the carrier. A second electrode, which has a first hardness, is formed above the organic functional layer structure. A particle trapping layer, which has a second hardness, is formed above the second electrode. An encapsulation, which has a third hardness, is formed above the particle trapping layer. The second hardness is less than the first hardness and the second hardness is less than the third hardness. The particle trapping layer has at least one material selected from the following group: plastic, a foam, a nanofoam, an aerogel, a nanocomposite, a paste, a jelly, colloids.

The particle trapping layer and its hardness relative to the hardness of the adjacent second electrode and the encapsulation means that the optoelectronic component has a particularly high level of robustness. Adjacency can be understood in this context as physical contact or the presence of a common interface. In particular, the optoelectronic component has a high tolerance to interfering particles in the manufacturing process and/or a high level of mechanical stability, with no or only negligible influence on other product properties such as the optoelectronic parameters and/or the service life, the storage stability, especially at low temperatures. production costs and short production times. In addition, the robustness against spontaneous failures is also increased.

Soft or super-soft materials can be used for the particle trapping layer. The relatively soft particle trapping layer absorbs existing particles and thereby prevents particles from penetrating the active organic area, in particular the organic functional layer structure. The soft particle trapping layer thus gives way to hard particles without the entire layer structure of the optoelectronic component and/or, for example, the encapsulation losing its sealing properties. The particle trapping layer can also be referred to as the first particle trapping layer.

The optoelectronic component can be, for example, an organic solar cell or an OLED, for example a transparent OLED or a top and/or bottom emitter.

The particle capture layer can also be used directly on the substrate and/or carrier. The particle capture layer can, for example, be used together with flexible, solid, transparent or non-transparent substrate and/or carrier types.

In various embodiments, the first hardness corresponds to a hardness value between 20 and 60 HV10, for example between 27 and 45 HV10, for example between 30 and 35 HV10, the second hardness corresponds to a hardness value between 1 and 59 HV10, for example between 5 and 40 HV10, for example between 10 and 26 HV10, and/or the third hardness corresponds to a hardness value between 27 and 10,000 HV10, for example between 60 and 5,000 HV10, for example between 100 and 1,000 HV10.

• - Aluminium (Härte 23 bis 36 HV10) für die zweite Elektrode und Zinn (Härte 18 HV10) für die Partikelfangschicht,
• - Aluminium (Härte 23 bis 36 HV10) für die zweite Elektrode und eine Zinn/Antimon-Legierung (Härte 23 HV10) für die Partikelfangschicht, wodurch beispielsweise bei Temperaturen kleiner 13°C, beispielsweise bei der Lagerung und/oder dem Transport des optoelektronischen Bauelements, die Zinnpest vermieden werden kann und weniger Probleme aufgrund von Wärmeentwicklung beim Betrieb des optoelektronischen Bauelements entstehen können, oder
• - eine Silber/Magnesium-Kombination für die zweite Elektrode und Zinn oder eine Zinn/Antimon-Legierung für die Partikelfangschicht.

Possible material combinations of the materials of the second electrode, for example the cathode of the optoelectronic component, and the particle capture layer are, for example,

• - Aluminium (hardness 23 to 36 HV10) for the second electrode and tin (hardness 18 HV10) for the particle trapping layer,
• - Aluminium (hardness 23 to 36 HV10) for the second electrode and a tin/antimony alloy (hardness 23 HV10) for the particle trapping layer, whereby tin pest can be avoided at temperatures below 13°C, for example during storage and/or transport of the optoelectronic component, and fewer problems can arise due to heat development during operation of the optoelectronic component, or
• - a silver/magnesium combination for the second electrode and tin or a tin/antimony alloy for the particle trapping layer.

In various embodiments, the encapsulation comprises a cover body and an encapsulation layer structure, wherein the encapsulation layer structure is arranged above the second electrode and the cover body is arranged above the encapsulation layer structure and wherein the encapsulation layer structure has the third hardness. The encapsulation layer structure can, for example, comprise a plurality of sublayers, wherein at least the sublayer adjacent to the particle capture layer has the first hardness. The encapsulation layer structure can, for example, be a thin-film encapsulation.

In various embodiments, the particle trapping layer comprises metal and/or plastic and/or metal-plastic composites.

In various embodiments, the particle trapping layer comprises magnesium, indium, gallium, zinc, bismuth, tin, antimony, iron, silicon, and/or combinations or alloys of these materials, or a polymer or alloy comprising one or more of these materials.

In various embodiments, the particle trapping layer comprises a foam, for example a nanofoam, for example a carbon nanofoam or a metal nanofoam, an aerogel, for example an Fe aerogel, a nanocomposite, a paste or a jelly. A nanofoam, for example a carbon nanofoam, for example aerographite, or a metal nanofoam can, for example, have a porosity of less than 50% and/or the size of the pores can be in the nanometer and/or micrometer range. A nanofoam comprising a polymer can, for example, be produced from microemulsions and/or nanocomposites (silicates), for example a polyurethane nanofoam. An aerogel can, for example, consist of up to 99.8% pores. A silicate aerogel can, for example, be produced in a sol-gel process. The particle trapping layer can, for example, comprise hybrid polymers, such as a Si-O-Si network, and/or composite materials with soft or hard surfaces without an interface transition.

In various embodiments, the particle capture layer comprises colloids. The colloids can be in the form of a paste or a jelly, for example.

In various embodiments, the particle trapping layer is thicker than a predetermined maximum expected interfering particle size, whereby the maximum expected interfering particle size is predetermined by a process for producing the optoelectronic component. For example, clean rooms in which the optoelectronic components are manufactured are divided into clean room classes which depend, among other things, on the maximum expected particle size. For example, according to DIN EN ISO 14644-1, the maximum expected particle size for clean room class ISO 1 is less than 0.3 µm and for clean room class ISO 2 it is less than 1 µm. Accordingly, for production in a clean room of clean room class ISO 1, a thickness of the particle trapping layer of 0.3 µm would be sufficient and for production in a clean room of clean room class ISO 2, a thickness of the particle trapping layer of 1 µm would be sufficient.

In various embodiments, the particle capture layer has a thickness in a range between 100 nm and 5 µm, for example between 500 nm and 2 µm.

In various embodiments, the particle trapping layer is at least partially formed directly on the organic functional layer structure. For example, the particle trapping layer can be formed directly on the organic functional layer structure in an outer edge region of the organic functional layer structure.

In various embodiments, the particle capture layer is formed at least partially next to the second electrode. For example, the particle capture layer can be formed next to the second electrode in the regions in which it is formed directly on the organic functional layer structure. The relatively hard encapsulation, in particular the encapsulation layer structure, can also surround the particle capture layer and/or the organic functional layer structure in these regions, in particular edge regions and/or at their edges.

In various embodiments, the organic functional layer structure has a fourth hardness and the second hardness is less than the fourth hardness.

In various embodiments, the optoelectronic component has a further particle trapping layer over the encapsulation layer structure. The further particle trapping layer has a fifth hardness that is less than the third hardness of the encapsulation. The further particle trapping layer can also be referred to as a second particle trapping layer.

In various embodiments, a method for producing an optoelectronic component is provided. In this case, a carrier is provided, for example formed. A first electrode is formed over the carrier. An organic functional layer structure is formed over the carrier. A second electrode, which has a first hardness, is formed over the organic functional layer structure. A particle trapping layer, which has a second hardness, is formed over the second electrode. An encapsulation, which has a third hardness, is formed over the particle trapping layer. The second hardness is less than the first hardness and the second hardness is less than the third hardness.

The process step for applying the soft or super-soft materials of the particle capture layer can take place directly, for example immediately after the formation, for example the deposition, of the second electrode or after a break, since even disruptive particles caused by the process can be absorbed by the soft particle capture layer. For example, after the application of the second electrode, a process interruption can take place in which a particle load is acceptable due to the particle capture layer to be applied subsequently. This can make it possible to form the particle capture layer ex-vacuum and/or in a low clean room quality. Furthermore, this makes it possible to use encapsulation methods such as cavity encapsulation, frit encapsulation and/or lamination encapsulation for the encapsulation.

Known systems such as thermal evaporators and/or processes such as PECVD, ALD, wet chemical processes and/or printing processes can be used to form the particle trapping layer. Printing processes that can be used include spraying, doctor blade coating, screen printing, inkjet, gravure printing, letterpress printing and/or a roll-to-roll or roll-to-sheet process. The particle trapping layer enables a reduction in the general particle cleanliness in the systems, for example a reduction in the required clean room quality, which helps to keep manufacturing costs low.

In various embodiments, the second electrode is formed by means of a mask and the particle trapping layer is formed using the same mask. The mask is not removed from the optoelectronic component between the formation of the second electrode and the formation of the particle trapping layer. This can help to ensure that no or at least very few interfering particles can get between the second electrode and the particle trapping layer.

If a carbon nanofoam, such as aerographite, is used as a particle trapping layer If the second electrode is to be formed, this can be produced, for example, by depositing carbon in a vacuum by laser bombardment. The formation of the particle trapping layer can take place directly after the formation of the second electrode, for example in the same vacuum and/or using the same masks. The density of the particle trapping layer can be in a range of, for example, 200 kg/m ³ to 2 kg/m ³ .

In various embodiments, the organic functional layer structure has a fourth hardness and the second hardness is less than the fourth hardness.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

• 1 ein herkömmliches optoelektronisches Bauelement;
• 2 eine herkömmliche Schichtenstruktur des herkömmlichen optoelektronischen Bauelements gemäß 1;
• 3 die herkömmliche Schichtenstruktur gemäß 2 mit Störpartikeln;
• 4 ein Ausführungsbeispiel einer Schichtenstruktur mit Störpartikeln;
• 5 ein Ausführungsbeispiel eines optoelektronischen Bauelements;
• 6 ein Ausführungsbeispiel eines optoelektronischen Bauelements mit Störpartikeln;
• 7 ein Ablaufdiagramm eines Ausführungsbeispiels eines Verfahrens zum Herstellen eines optoelektronischen Bauelements.

They show:

• 1 a conventional optoelectronic device;
• 2 a conventional layer structure of the conventional optoelectronic component according to 1 ;
• 3 the conventional layer structure according to 2 with interfering particles;
• 4 an embodiment of a layer structure with interfering particles;
• 5 an embodiment of an optoelectronic component;
• 6 an embodiment of an optoelectronic component with interfering particles;
• 7 a flow diagram of an embodiment of a method for producing an optoelectronic component.

In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "fore", "rear", etc. will be used with reference to the orientation of the figure(s) being described. Since components of embodiments may be positioned in a number of different orientations, the directional terminology is for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It is to be understood that the features of the various embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

An optoelectronic component can be a component that emits electromagnetic radiation or a component that absorbs electromagnetic radiation. An electromagnetic radiation-absorbing component can be a solar cell, for example. An electromagnetic radiation-emitting component can be designed, for example, as an organic electromagnetic radiation-emitting diode or as an organic electromagnetic radiation-emitting transistor. The radiation can be, for example, light in the visible range, UV light and/or infrared light. In this context, the electromagnetic radiation-emitting component can be designed, for example, as an organic light-emitting diode (OLED) or as an organic light-emitting transistor. In various embodiments, the optoelectronic component can be part of an integrated circuit. Furthermore, a plurality of optoelectronic components can be provided, for example housed in a common housing.

1 shows a conventional optoelectronic component 1. The conventional optoelectronic component 1 has a carrier 12, for example a substrate. An optoelectronic layer structure is formed on the carrier 12.

The optoelectronic layer structure has a first electrode layer 14, which has a first contact section 16, a second contact section 18 and a first electrode 20. The second contact section 18 is electrically coupled to the first electrode 20 of the optoelectronic layer structure. The first electrode 20 is electrically insulated from the first contact section 16 by means of an electrical insulation barrier 21. An organic functional layer structure 22 of the optoelectronic layer structure is arranged above the first electrode 20. organic functional layer structure 22. The organic functional layer structure 22 can, for example, have one, two or more sublayers, as described below with reference to 2 explained in more detail. A second electrode 23 of the optoelectronic layer structure is formed above the organic functional layer structure 22 and is electrically coupled to the first contact section 16. The first electrode 20 serves, for example, as an anode or cathode of the optoelectronic layer structure. The second electrode 23 serves, corresponding to the first electrode, as a cathode or anode of the optoelectronic layer structure.

An encapsulation layer structure 24 is formed above the second electrode 23 and partly above the first contact section 16 and partly above the second contact section 18, which encapsulates the optoelectronic layer structure, in particular the organic functional layer structure 22. In the encapsulation layer structure 24, a first recess of the encapsulation layer structure 24 is formed above the first contact section 16 and a second recess of the encapsulation layer structure 24 is formed above the second contact section 18. A first contact region 32 is exposed in the first recess of the encapsulation layer structure 24 and a second contact region 34 is exposed in the second recess of the encapsulation layer structure 24. The first contact region 32 serves to electrically contact the first contact section 16 and the second contact region 34 serves to electrically contact the second contact section 18.

An adhesive layer 36 is formed over the encapsulation layer structure 24. The adhesive layer 36 comprises, for example, an adhesive, for example an adhesive, for example a laminating adhesive, a lacquer and/or a resin. A cover body 38 is formed over the adhesive layer 36. The adhesive layer 36 serves to attach the cover body 38 to the encapsulation layer structure 24. The cover body 38 comprises, for example, glass and/or metal. For example, the cover body 38 can be formed essentially from glass and have a thin metal layer, for example a metal foil, and/or a graphite layer, for example a graphite laminate, on the glass body. The cover body 38 serves to protect the conventional optoelectronic component 1, for example from mechanical forces from the outside. Furthermore, the cover body 38 can serve to distribute and/or dissipate heat that is generated in the conventional optoelectronic component 1. For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and/or dissipate the heat generated during operation of the conventional optoelectronic component 1.

The adhesive layer 36 can, for example, be applied in a structured manner to the encapsulation layer structure 24. The fact that the adhesive layer 36 is applied in a structured manner to the encapsulation layer structure 24 can mean, for example, that the adhesive layer 36 already has a predetermined structure directly upon application. For example, the adhesive layer 36 can be applied in a structured manner using a dispensing or printing process.

The conventional optoelectronic component 1 can, for example, be separated from a component assembly by the carrier 12 being cut along its 1 and then broken and by cutting the cover body 38 equally along its 1 shown lateral outer edges are scratched and then broken. During this scratching and breaking, the encapsulation layer structure 24 is exposed above the contact areas 32, 34. The first contact area 32 and the second contact area 34 can then be exposed in a further method step, for example by means of an ablation process, for example by means of laser ablation, mechanical scratching or an etching process. Alternatively, the outer edges of the carrier 12 and the cover body 38 can be flush with one another and the contact areas 32, 34 can be exposed via contact recesses (not shown) in the carrier 12 and/or the cover body 38.

The conventional optoelectronic component 1 can be designed as a top emitter and/or bottom emitter. If the conventional optoelectronic component 1 is designed as a top emitter and bottom emitter, the conventional optoelectronic component 1 can be referred to as an optically transparent component, for example a transparent organic light-emitting diode.

2 shows a detailed sectional view of a conventional layer structure of a conventional optoelectronic component, for example the conventional optoelectronic component 1 explained above.

The conventional optoelectronic component 1 has the carrier 12 and an active region above the carrier 12. A first barrier layer (not shown), for example a first barrier thin layer, can be formed between the carrier 12 and the active region. The active region has the first electrode 20, the organic functional layer structure 22 and the second electrode 23. The encapsulation layer structure 24 is formed above the active region. The encapsulation layer structure 24 can be formed as a second barrier layer. The cover body 38 is arranged above the active region and above the encapsulation layer structure 24. The cover body 38 can be arranged on the encapsulation layer structure 24, for example, by means of an adhesive layer 36. An encapsulation 40 of the conventional optoelectronic component 1 is formed by the encapsulation layer structure 24, the adhesive layer 36 and the cover body 38.

The active region is an electrically and/or optically active region. The active region is, for example, the region of the conventional optoelectronic component 1 in which electrical current flows to operate the conventional optoelectronic component 1 and/or in which electromagnetic radiation is generated or absorbed.

The organic functional layer structure 22 can have one, two or more functional layer structure units and one, two or more intermediate layers between the layer structure units. If several layer structure units are formed, light of a different wavelength and/or color can be generated in one of these layer structure units than in another of the layer structure units.

The carrier 12 can be translucent or transparent. The carrier 12 serves as a carrier element for electronic elements or layers, for example light-emitting elements. The carrier 12 can, for example, comprise or be formed from glass, quartz, and/or a semiconductor material or any other suitable material. Furthermore, the carrier 12 can comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic can comprise one or more polyolefins. Furthermore, the plastic can comprise polyvinyl chloride (PVC), polystyrene (PS), polyester and/or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and/or polyethylene naphthalate (PEN). The carrier 12 can comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel. The carrier 12 can be designed as a metal foil or metal-coated foil. The carrier 12 can be part of a mirror structure or form one. The carrier 12 can have a mechanically rigid region and/or a mechanically flexible region or can be designed in such a way.

The first electrode 20 can be designed as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 has an electrically conductive material, for example metal and/or a conductive transparent oxide (TCO) or a layer stack of several layers that have metals or TCOs. The first electrode 20 can, for example, have a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer that is applied to an indium tin oxide layer (ITO) (Ag on ITO) or ITO-Ag-ITO multilayers.

The metal used can be, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials.

Transparent conductive oxides are transparent, conductive materials, for example metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal-oxygen compounds such as ZnO, SnO2, or In2O3, ternary metal-oxygen compounds such as AlZnO, Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5 or In4Sn3O12 or mixtures of different transparent conductive oxides belong to the group of TCOs.

The first electrode 20 can alternatively or in addition to the materials mentioned: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and/or networks of semiconducting nanowires. Alternatively or additionally, the first electrode 20 can have one of the following structures or be formed from it: a network of metallic nanowires, for example made of Ag, which are combined with conductive polymers, a network of carbon nanotubes which are combined with conductive polymers and/or graphene layers and composites. Furthermore, the first electrode 20 can have electrically conductive polymers or transition metal oxides.

The first electrode 20 can, for example, have a layer thickness in a range from 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 20 can have a first electrical connection to which a first electrical potential can be applied. The first electrical The first electrical potential can be provided by an energy source (not shown), for example a current source or a voltage source. Alternatively, the first electrical potential can be applied to the carrier 12 and fed indirectly to the first electrode 20 via the carrier 12. The first electrical potential can be, for example, the ground potential or another predetermined reference potential.

The organic functional layer structure 22 may comprise a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer and/or an electron injection layer.

The hole injection layer may be formed on or above the first electrode 20. The hole injection layer may comprise or be formed from one or more of the following materials: HAT-CN, Cu(I)pFBz, MoOx, WOx, VOx, ReOx, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc; NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); spiro TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DMFL-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); Spiro-TAD (2,2',7,7'-tetrakis(n,n-diphenylamino)-9,9 '-spirobifluorene); 9,9-bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene; 9,9-bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene; 9,9-bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluoro; N,N' bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidine; 2,7 bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2'-bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-bis(N,N-di-phenyl-amino)9,9-spiro-bifluorene; di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane; 2,2',7,7' tetra(N, N-di-tolyl)amino-spiro-bifluorene; and/or N, N,N',N'-tetra-naphthalen-2-yl-benzidine.

The hole injection layer may have a layer thickness in a range from approximately 10 nm to approximately 1000 nm, for example in a range from approximately 30 nm to approximately 300 nm, for example in a range from approximately 50 nm to approximately 200 nm.

The hole transport layer can be formed on or above the hole injection layer. The hole transport layer can comprise or be formed from one or more of the following materials: NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); spiro TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DMFL-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); Spiro-TAD (2,2',7,7'-tetrakis(n,n-diphenylamino)-9,9 '-spirobifluorene); 9,9-bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene; 9,9-bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene; 9,9-bis[4-(N,N‘-bis-naphthalen-2-yl-N,N’-bis-phenyl-amino)-phenyl]-9H-fluoro; N,N’ bis(phenanthren-9-yl)-N,N’-bis(phenyl)-benzidine; 2,7-bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2’-bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-bis(N,N-di-phenyl-amino)9,9-spiro-bifluorene; di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane; 2,2',7,7'-tetra(N,N-di-tolyl)amino-spiro-bifluorene; and N,N,N',N' tetra-naphthalen-2-yl-benzidine.

The hole transport layer may have a layer thickness in a range from about 5 nm to about 50 nm, for example in a range from about 10 nm to about 30 nm, for example about 20 nm.

One or more emitter layers can be formed on or above the hole transport layer, for example with fluorescent and/or phosphorescent emitters. The emitter layer can comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules (“small molecules”) or a combination of these materials. The emitter layer can comprise or be formed from one or more of the following materials: organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g. 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue phosphorescent FIrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)-iridium III), green phosphorescent Ir(ppy)3 (tris(2-phenylpyridine)iridium III), red phosphorescent Ru (dtbbpy)3*2(PF6) (tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex) and blue fluorescent DPAVBi (4,4-bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-bis[N,N-di-(p-tolyl)-amino]anthracene) and red fluorescent DCM2 (4-dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymer emitters. Such non-polymer emitters can be deposited, for example, by thermal evaporation. Polymer emitters can also be used, which can be deposited, for example, by means of a wet-chemical process, such as a spin-coating process (also referred to as spin coating). The emitter materials can be suitably embedded in a matrix material, for example a technical ceramic or a polymer, for example an epoxy, or a silicone.

The first emitter layer may have a layer thickness in a range from approximately 5 nm to approximately 50 nm, for example in a range from approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

The emitter layer can have emitter materials that emit in one color or in different colors (for example blue and yellow or blue, green and red). Alternatively, the emitter layer can have several sub-layers that emit light of different colors. By mixing the different colors, the emission of light with a white color impression can result. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that a white color impression results from a (not yet white) primary radiation through the combination of primary radiation and secondary radiation.

The electron transport layer can be formed, for example deposited, on or above the emitter layer. The electron transport layer can comprise or be formed from one or more of the following materials: NET-18; 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-Diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene; 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; phenyl-dipyrenylphosphine oxide; naphthalenetetracarboxylic dianhydride or its imides; perylenetetracarboxylic dianhydride or its imides; and substances based on siloles with a silacyclopentadiene unit.

The electron transport layer may have a layer thickness in a range from about 5 nm to about 50 nm, for example in a range from about 10 nm to about 30 nm, for example about 20 nm.

The electron injection layer can be formed on or above the electron transport layer. The electron injection layer can comprise or be formed from one or more of the following materials: NDN-26, MgAg, Cs2CO3, Cs3PO4, Na, Ca, K, Mg, Cs, Li, LiF; 2,2',2" -(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole,2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-Hydroxyquinolinolato-lithium, 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-Diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene; 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; phenyl-dipyrenylphosphine oxide; naphthalenetetracarboxylic dianhydride or its imides; perylenetetracarboxylic dianhydride or its imides; and substances based on siloles with a silacyclopentadiene unit.

The electron injection layer may have a layer thickness in a range from approximately 5 nm to approximately 200 nm, for example in a range from approximately 20 nm to approximately 50 nm, for example approximately 30 nm.

In an organic functional layer structure 22 with two or more organic functional layer structure units, corresponding intermediate layers can be formed between the organic functional layer structure units. The organic functional layer structure units can each be formed individually according to an embodiment of the organic functional layer structure 22 explained above. The intermediate layer can be formed as an intermediate electrode. The intermediate electrode can be electrically connected to an external voltage source. The external voltage source can, for example, provide a third electrical potential at the intermediate electrode. However, the intermediate electrode can also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.

The organic functional layer structure unit can, for example, have a layer thickness of a maximum of approximately 3 µm, for example a layer thickness of a maximum of approximately 1 µm, for example a layer thickness of a maximum of approximately 300 nm.

The conventional optoelectronic component 1 can optionally have further functional layers, for example arranged on or above the one or more emitter layers or on or above the electron transport layer. The further functional layers can, for example, be internal or external coupling/coupling structures that can further improve the functionality and thus the efficiency of the conventional optoelectronic component 1.

The second electrode 23 can be designed according to one of the embodiments of the first electrode 20, wherein the first electrode 20 and the second electrode 23 can be designed the same or differently. The second electrode 23 can in particular comprise aluminum or be formed from it. The material of the second electrode 23 and thus the second electrode 23 can have a first hardness in a range, for example, from 20 to 60 HV10, for example from 27 to 45 HV10, for example from 30 to 35 HV10.

The second electrode 23 can be designed as an anode or as a cathode. The second electrode 23 can have a second electrical connection to which a second electrical potential can be applied. The second electrical potential can be provided by the same or a different energy source as the first electrical potential. The second electrical potential can be different from the first electrical potential. The second electrical potential can, for example, have a value such that the difference to the first electrical potential has a value in a range from approximately 1.5 V to approximately 20 V, for example a value in a range from approximately 2.5 V to approximately 15 V, for example a value in a range from approximately 3 V to approximately 12 V.

The encapsulation layer structure 24 can also be referred to as thin-film encapsulation. The encapsulation layer structure 24 can be designed as a translucent or transparent layer. The encapsulation layer structure 24 forms a barrier against chemical contaminants or atmospheric substances, in particular against water (moisture) and oxygen. In other words, the encapsulation layer structure 24 is designed such that it cannot be penetrated by substances that can damage the conventional optoelectronic component 1, for example water, oxygen or solvents, or can only penetrate them to a very small extent. The encapsulation layer structure 24 can be designed as a single layer or as a layer stack.

The encapsulation layer structure 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof. The encapsulation layer structure 24 can have a third hardness in a range, for example, from 27 to 10,000 HV 10, for example from 60 to 5,000 HV10, for example from 100 to 5,000 HV10.

The encapsulation layer structure 24 can have a layer thickness of approximately 0.1 nm (one atomic layer) to approximately 1000 nm, for example a layer thickness of approximately 10 nm to approximately 100 nm, for example approximately 40 nm. The encapsulation layer structure 24 can have a high-refractive material, for example one or more materials with a high refractive index, for example with a refractive index of 1.5 to 3, for example from 1.7 to 2.5, for example from 1.8 to 2. The encapsulation layer structure 24 can be a TFE layer structure, for example. The encapsulation layer structure 24 can, for example, have a water permeability of a maximum of 10 ^-6 g/m ² /d or less.

If necessary, the first barrier layer on the carrier 12 can be formed corresponding to a configuration of the encapsulation layer structure 24.

The encapsulation layer structure 24 can be formed, for example, by means of a suitable deposition process, e.g. by means of an atomic layer deposition process (ALD)), e.g. a plasma-enhanced atomic layer deposition process (PEALD) or a plasma-less atomic layer deposition process (PLALD)), or by means of a chemical vapor deposition process (CVD)), e.g. a plasma-enhanced assisted vapor deposition process (Plasma Enhanced Chemical Vapor Deposition (PECVD)) or a plasma-less chemical vapor deposition process (Plasma-less Chemical Vapor Deposition (PLCVD)), or alternatively by means of other suitable deposition processes.

The adhesive layer 36 can, for example, comprise adhesive and/or varnish, by means of which the cover body 38 is arranged, for example glued, on the encapsulation layer structure 24. The adhesive layer 36 can be transparent or translucent. The adhesive layer 36 can, for example, comprise particles that scatter electromagnetic radiation, for example light-scattering particles. The adhesive layer 36 can therefore act as a scattering layer and can lead to an improvement in the color angle distortion and the coupling-out efficiency.

Dielectric scattering particles can be provided as light-scattering particles, for example made of a metal oxide, for example silicon oxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga2Ox), aluminum oxide, or titanium oxide. Other particles can also be suitable, provided they have a refractive index that is different from the effective refractive index of the matrix of the adhesive layer 36, for example air bubbles, acrylate, or hollow glass spheres. Furthermore, for example metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.

The adhesive layer 36 can have a layer thickness of greater than 1 µm, for example a layer thickness of several µm, for example up to 50 µm. In various embodiments, the adhesive can be a lamination adhesive.

The adhesive layer 36 can have a refractive index that is smaller than the refractive index of the cover body 38. The adhesive layer 36 can, for example, have a low-refractive-index adhesive, such as an acrylate, which has a refractive index of approximately 1.3. However, the adhesive layer 36 can also have a high-refractive-index adhesive that, for example, has high-refractive-index, non-scattering particles and has a layer-thickness-averaged refractive index that approximately corresponds to the average refractive index of the organically functional layer structure 22, for example in a range from approximately 1.6 to 2.5, for example from 1.7 to approximately 2.0.

A so-called getter layer or getter structure, i.e. a laterally structured getter layer (not shown), can be arranged on or above the active region. The getter layer can be translucent, transparent or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances that are harmful to the active region. A getter layer can comprise or be formed from a zeolite derivative, for example. The getter layer can have a layer thickness of greater than approximately 1 µm, for example a layer thickness of several µm. In various embodiments, the getter layer can comprise a lamination adhesive or be embedded in the adhesive layer 36.

The cover body 38 can be formed, for example, from a glass body, a metal foil or a sealed plastic film cover body. The cover body 38 can be arranged, for example, by means of a frit bond (glass frit bonding/glass soldering/seal glass bonding) using a conventional glass solder in the geometric edge regions of the conventional optoelectronic component 1 on the encapsulation layer structure 24 or the active region. The cover body 38 can, for example, be part of a cavity encapsulation, wherein the getter layer or getter structure can optionally be arranged in the corresponding cavity. The cover body 38 can, for example, have a refractive index (for example at a wavelength of 633 nm), for example 1.3 to 3, for example 1.4 to 2, for example 1.5 to 1.8.

3 shows the conventional layer structure according to 2 wherein a first interfering particle 42 and a second interfering particle 44 are arranged in the conventional layer structure. The interfering particles 42, 44 have, for example, entered the conventional layer structure undesirably during the method for producing the conventional optoelectronic component 1.

The first interference particle 42 is partially arranged in the encapsulation layer structure 24, penetrates the second electrode 23 and extends into the organic functional layer structure 22. The second interference particle 44 is at least partially arranged in the second electrode 23 or at least touches it, penetrates the organic functional layer structure 22 and is at least partially arranged in the first electrode 20 or at least touches it.

The first interfering particle 42 leads to local damage to the second electrode 23, the encapsulation layer structure 24 and the organic functional layer structure 22. The second interference particle 44 short-circuits the first electrode 20 with the second electrode 23 and can thereby cause at least a partial failure or even a spontaneous failure of the conventional optoelectronic component 1.

In particular, if the size of the interfering particles 42, 44 corresponds to the size of the thickness of the second electrode 23 and/or the size of the thickness of the encapsulation layer structure 24, for example in the case of interfering particles 42, 40 with external dimensions in a range of, for example, 50 nm to 5 µm, for example 100 nm to 2 µm, the interfering particles 42, 44 can be pushed through the second electrode 23 when subjected to external pressure due to the low hardness of the second electrode 23. Depending on their size and/or the external pressure, the interfering particles 42, 40 can also be pushed through the organic functional layer structure 22 to the opposite first electrode 20, which can result in spontaneous failure.

4 shows a layer structure of an embodiment of an optoelectronic component. The layer structure and the optoelectronic component can, for example, largely correspond to the conventional layer structure explained above or to the conventional optoelectronic component 1 explained above. In addition, the layer structure according to 4 a particle trapping layer 50. The particle trapping layer 50 is formed between the second electrode 23 and the encapsulation 40, in particular the encapsulation layer structure 24. The particle trapping layer 50 can also be referred to as the first particle trapping layer. The particle trapping layer 50 borders on the second electrode, i.e. it has physical contact with it or shares a common interface with it. The encapsulation 40 borders on the particle trapping layer 50. For example, the encapsulation layer structure 24 borders on the particle trapping layer 50 or, if the encapsulation layer structure 24 is not provided, the adhesive layer 36 borders on the particle trapping layer 50. The cover body 38 is formed on the adhesive layer 36. For example, the cover body 38 is laminated onto the particle trapping layer 50 and/or the encapsulation layer structure 24 by means of the adhesive layer 36, for example in physical contact with the latter.

The particle trapping layer 50 and in particular the material of the particle trapping layer 50 have a second hardness which is lower than the first hardness of the second electrode 23 and the third hardness of the encapsulation layer structure 24. For example, the first hardness can correspond to a hardness value, for example, between 20 and 60 HV10, for example between 27 and 45 HV10, for example between 30 and 35 HV10, the second hardness can correspond to a hardness value, for example, between 1 and 59 HV10, for example between 5 and 40 HV10, for example between 10 and 26 HV10, and the third hardness can correspond to a hardness value, for example, between 27 and 10,000 HV10, for example between 60 and 5,000 HV10, for example between 100 and 5,000 HV10. Optionally, the second hardness of the particle capture layer 50 can also be smaller than a fourth hardness of the organic functional layer structure 22, for example smaller than a fourth hardness of a partial layer of the organic functional layer structure 22 that borders the second electrode 23.

The particle trapping layer 50 can comprise metal or plastic, for example. The particle trapping layer 50 can comprise magnesium, indium, gallium, zinc, bismuth, tin, antimony, iron, silicon and/or a combination of the alloy of these materials, for example. Alternatively, the particle trapping layer 50 can comprise a polymer, for example. The particle trapping layer 50 can comprise a foam, for example a nanofoam, for example a carbon nanofoam or a metal nanofoam, an aerogel, for example an Fe aerogel, a nanocomposite, a paste or a jelly. A nanofoam, for example a carbon nanofoam, for example aerographite, or a metal nanofoam can, for example, have a porosity of less than 50% and/or the size of the pores can be in the nanometer and/or micrometer range. A nanofoam comprising a polymer can, for example, be produced from microemulsions and/or nanocomposites (silicates), for example a polyurethane nanofoam. An aerogel can, for example, consist of up to 99.8% pores. A silicate aerogel can be produced, for example, in a sol-gel process. The particle capture layer 50 can, for example, comprise hybrid polymers, such as a Si-O-Si network, and/or composite materials with soft or hard surfaces without an interface transition. Alternatively or additionally, the particle capture layer 50 can comprise colloids. The colloids can, for example, be in the form of a paste or a jelly.

• - Aluminium (Härte 23 bis 36 HV10) für die zweite Elektrode 23 und Zinn (Härte 18 HV10) für die Partikelfangschicht 50,
• - Aluminium (Härte 23 bis 36 HV10) für die zweite Elektrode 23 und eine Zinn/Antimon-Legierung (Härte 23 HV10) für die Partikelfangschicht 50, wodurch beispielsweise bei Temperaturen kleiner 13°C, beispielsweise bei der Lagerung und/oder dem Transport des entsprechenden optoelektronischen Bauelements, die Zinnpest vermieden werden kann und weniger Probleme aufgrund von Wärmeentwicklung beim Betrieb des entsprechenden optoelektronischen Bauelements entstehen können, oder
• - eine Silber/Magnesium-Kombination für die zweite Elektrode 23 und Zinn oder eine Zinn/Antimon-Legierung für die Partikelfangschicht 50.

Possible material combinations of the materials of the second electrode 23, for example the cathode of the corresponding optoelectronic component, and the particle capture layer 50 are, for example,

• - Aluminium (hardness 23 to 36 HV10) for the second electrode 23 and tin (hardness 18 HV10) for the particle trapping layer 50,
• - aluminum (hardness 23 to 36 HV10) for the second electrode 23 and a tin/antimony alloy (hardness 23 HV10) for the particle trapping layer 50, whereby, for example, at temperatures below 13°C, for example during storage and/or transport of the corresponding optoelectronic component, tin pest can be avoided and fewer problems can arise due to heat development during operation of the corresponding optoelectronic component, or
• - a silver/magnesium combination for the second electrode 23 and tin or a tin/antimony alloy for the particle trapping layer 50.

The particle trapping layer 50 is preferably designed such that its thickness is greater than a maximum expected interfering particle size, for example of the interfering particles 42, 44. The maximum expected interfering particle size can depend, for example, on the method for producing the optoelectronic component. For example, it can be assumed that when producing the optoelectronic component in a clean room with a predetermined clean room quality, the maximum particle size does not exceed a maximum value that depends on the clean room quality. The thickness of the particle trapping layer 50 can then be specified depending on this value. If, for example, the maximum expected particle size is 1 µm, the thickness of the particle trapping layer 50 can be greater than 1 µm, for example in a range between 1 and 5 µm. The particle trapping layer 50 can, for example, be electrically conductive or electrically insulating and can comprise corresponding materials. In general, the thickness of the particle capture layer 50 can be in a range, for example, between 100 nm and 5 µm, for example between 500 nm and 2 µm.

The hard second electrode 23 and the hard encapsulation layer structure 24 and the relatively soft particle capture layer 50 ensure that the interfering particles 42, 44 between the second electrode 23 and the encapsulation layer structure 24 are not pressed into the second electrode 23 or through the second electrode 23 into or through the organic functional layer structure 22, but are captured by the particle capture layer 50 and remain in it, even if mechanical pressure is exerted from the outside on the corresponding optoelectronic component. The particle trapping layer 50 is thus softer than the second electrode 23 and the encapsulation layer structure 24 and optionally softer than the organic functional layer structure 22, whereby in principle the particle trapping layer 50, the second electrode 23 and the encapsulation layer structure 24 can consist of any layers or layer structures that only have to fulfill the specific hardness conditions and that have to fulfill the corresponding functions, such as high electrical conductivity in the case of the second electrode 23 or encapsulation effect in the case of the encapsulation layer structure 24, so that the interfering particles 42, 44 are pressed into the particle trapping layer 50.

The material of the particle capture layer 50 can be selected such that the optical properties of the corresponding optoelectronic component are not changed at all or at least only negligibly or only in the desired manner. The particle capture layer 50 can, for example, be structured, i.e. inhomogeneous, or unstructured, i.e. homogeneous. The particle capture layer 50 can, for example, be designed with or without light-influencing components and/or intermediate layers. The light-influencing components can be, for example, nanoparticles or coupling-out structures. The particle capture layer 50 can, for example, be designed to be hydrophilic, hydrophobic, or amphilic.

In addition to the 4 shown layer structure, the corresponding optoelectronic component can have a 4 not shown carrier, which can correspond for example to the carrier 12 explained above and/or which can be designed to be flexible or inflexible, i.e. rigid. The corresponding optoelectronic component can be transparent or non-transparent and/or designed as a top and/or bottom emitter.

Optionally, a further particle trapping layer 52 can be formed over the encapsulation layer structure 24. The further particle trapping layer 52 can also be referred to as a second particle trapping layer. The further particle trapping layer 52 can have a fifth hardness. The fifth hardness can be less than the first and/or third hardness. The fifth hardness can be equal to or approximately equal to the second hardness. The further particle trapping layer 52 can be formed according to an embodiment of the particle trapping layer 50. The further particle trapping layer 52 can be formed the same as or differently than the particle trapping layer 50.

5 shows an embodiment of an optoelectronic component 10, which for example has the layer structure according to 4 The particle trapping layer 50 is in 5 arranged exclusively above the second electrode 23. The encapsulation layer structure 24 adjoins the particle trapping layer 50 above the particle trapping layer 50 and laterally next to the particle trapping layer 50 and laterally next to the second electrode 23 and the organic functional layer structure 22 to the second electrode 23 or the organic functional layer structure 22. Furthermore, the second electrode 23 is formed everywhere between the organic functional layer structure 22 and the particle capture layer 50. Alternatively, the organic functional layer structure 22 can be at least partially free of the second electrode 23 and the particle capture layer 50 can be formed directly on the organic functional layer structure 22 at least in partial areas.

6 shows an embodiment of an optoelectronic component 10, which can, for example, largely correspond to the optoelectronic component 10 explained above. The particle capture layer 50 is formed above the second electrode 23 and laterally next to the second electrode 23 and the organic functional layer structure 22. The particle capture layer 50 can thus not only capture second interfering particles 44, which in 6 arranged above the second electrode 23, but also first interfering particles 42 which are arranged laterally next to the second electrode 23 and/or the organic functional layer structure 22.

In other words, the second electrode 23 can be reshaped using the particle trapping layer 50. Any interfering particles 42, 44 that may be present then remain in the particle trapping layer 50 and are not pressed into the organic functional layer structure 22. By reshaping the layers formed before the particle trapping layer 50, lateral protection against the interfering particles 42, 44 is also ensured by the particle trapping layer 50.

7 shows a flow chart of an embodiment of a method for producing an optoelectronic component, for example the optoelectronic component 10 explained above.

In a step S2, a carrier is provided, for example the carrier 12.

In a step S4, a first electrode is formed over the carrier, for example the first electrode 20 explained above.

In a step S6, an organic functional layer structure is formed over the first electrode, for example the organic functional layer structure 22 explained above.

In a step S8, a second electrode is formed over the organic functional layer structure 22, for example the second electrode 23 explained above.

In a step S10, a particle trapping layer is formed over the second electrode, for example the particle trapping layer 50 explained above. The particle trapping layer 50 can optionally be formed using the same mask with which the second electrode 23 is formed. The mask can optionally remain unchanged during step S4 and step S6 and between these steps, so that no interfering particles 42, 44 can get between the second electrode 24 and the particle trapping layer 50. This is possible, for example, when forming the layers by means of vacuum vapor deposition. The mask can also be referred to as a shadow mask.

In a step S12, an encapsulation is formed over the particle trapping layer 50, for example the encapsulation 40 explained above. In particular, for example, the encapsulation layer structure 24 can be formed over the particle trapping layer 50 and the cover body 38 can be fixed to the encapsulation layer structure 24, for example by means of the adhesive layer 36. The method for forming the particle trapping layer 50 depends on the material of the particle trapping layer 50. The particle trapping layer 50 can be formed, for example, by means of printing, for example screen printing, doctor blade coating or inkjet printing, or in a deposition process, for example by means of ALD or CVD, or by means of sputtering, provided that the material of the particle trapping layer 50 is suitable for the corresponding process.

The invention is not limited to the exemplary embodiments given. For example, one, two or more functional sublayers (not shown) can be formed in the layer structure of the optoelectronic component 10, which can contribute, for example, to improving an efficiency, for example an output efficiency, and/or to influencing a color or a color temperature of the optoelectronic component 10. For example, output structures can be arranged and/or formed in or on the carrier 12 and/or in or on the first electrode layer 15.

Claims (12)

Optoelectronic component (10), with - a carrier (12), - a first electrode (20) above the carrier (12), - an organic functional layer structure (22) above the first electrode (20), - a second electrode (23) having a first hardness, above which organic functional layers structure (22), - a particle trapping layer (50) having a second hardness over the second electrode (23), and - an encapsulation (40) with an encapsulation layer structure (24) having a third hardness, an adhesive layer (36) and a cover body (38) over the particle trapping layer (50), wherein the encapsulation layer structure (24) adjoins the particle trapping layer (50) and the cover body (38) is glued to the encapsulation layer structure (24) by means of the adhesive layer (36) over the particle trapping layer (50), - wherein the second hardness is less than the first hardness, wherein the second hardness is less than the third hardness, and wherein the particle trapping layer (50) comprises at least one material selected from the following group: plastic, a foam, a nanofoam, an aerogel, a nanocomposite, a paste, a jelly, colloids. Optoelectronic component (10) according to Claim 1 , where the first hardness corresponds to a hardness value between 20 and 60 HV10, where the second hardness corresponds to a hardness value between 1 and 59 HV10 and/or where the third hardness corresponds to a hardness value between 27 and 10000 HV10. Optoelectronic component (10) according to one of the preceding claims, wherein the particle capture layer (50) comprises magnesium, indium, gallium, zinc, bismuth, tin, antimony, iron, silicon and/or a polymer or an alloy comprising one or more of these substances. Optoelectronic component (10) according to one of the preceding claims, in which the particle trapping layer (50) is thicker than a predetermined maximum expected interfering particle size, wherein the maximum expected interfering particle size is predetermined by a method for producing the optoelectronic component (10). Optoelectronic component (10) according to one of the preceding claims, wherein the particle capture layer (50) has a thickness in a range between 100 nm and 5 µm. Optoelectronic component (10) according to one of the preceding claims, in which the particle capture layer (50) is at least partially formed directly on the organic functional layer structure (22). Optoelectronic component (10) according to one of the preceding claims, in which the particle trapping layer (50) is formed at least partially adjacent to the second electrode (23). Optoelectronic component (10) according to one of the preceding claims, in which the organic functional layer structure (22) has a fourth hardness and in which the second hardness is smaller than the fourth hardness. Optoelectronic component (10) according to one of the Claims 1 until 8 having a further particle trapping layer (52) over the encapsulation layer structure (24), the further particle trapping layer (52) having a fifth hardness which is less than the third hardness of the encapsulation. Method for producing an optoelectronic component (10), in which - a carrier (12) is provided, - a first electrode (20) is formed over the carrier (12), - an organic functional layer structure (22) is formed over the carrier (12), - a second electrode (23) having a first hardness is formed over the organic functional layer structure (22), - a particle trapping layer (50) having a second hardness is formed over the second electrode (23), and - an encapsulation (40) with an encapsulation layer structure (24) having a third hardness, an adhesive layer (36) and a covering body (38) is formed over the particle trapping layer (50), wherein the encapsulation layer structure (24) adjoins the particle trapping layer (50) and the covering body (38) is fixed to the particle trapping layer (50) by means of the adhesive layer (36). Encapsulation layer structure (24) is glued on, - wherein the second hardness is less than the first hardness, wherein the second hardness is less than the third hardness, and wherein the particle capture layer (50) comprises at least one material selected from the following group: plastic, a foam, a nanofoam, an aerogel, a nanocomposite, a paste, a jelly, colloids. Procedure according to Claim 10 , in which the second electrode (23) is formed by means of a mask and in which the particle trapping layer (50) is formed with the same mask, wherein the mask is not removed from the optoelectronic component (10) between the formation of the second electrode (23) and the formation of the particle trapping layer (50). Procedure according to one of the Claims 10 or 11 , in which the organic functional layer structure (22) has a fourth hardness and in which the second hardness is smaller than the fourth hardness.

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