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DE602008003796D1 - Tors mit einem oxidhalbleiter - Google Patents

Tors mit einem oxidhalbleiter

Info

Publication number
DE602008003796D1
DE602008003796D1 DE602008003796T DE602008003796T DE602008003796D1 DE 602008003796 D1 DE602008003796 D1 DE 602008003796D1 DE 602008003796 T DE602008003796 T DE 602008003796T DE 602008003796 T DE602008003796 T DE 602008003796T DE 602008003796 D1 DE602008003796 D1 DE 602008003796D1
Authority
DE
Germany
Prior art keywords
insulation film
semiconductor layer
forming
oxide semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008003796T
Other languages
English (en)
Inventor
Hideyuki Omura
Ryo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602008003796D1 publication Critical patent/DE602008003796D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Dram (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Light Receiving Elements (AREA)
DE602008003796T 2007-05-31 2008-05-28 Tors mit einem oxidhalbleiter Active DE602008003796D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007145186 2007-05-31
PCT/JP2008/060246 WO2008149873A1 (en) 2007-05-31 2008-05-28 Manufacturing method of thin film transistor using oxide semiconductor

Publications (1)

Publication Number Publication Date
DE602008003796D1 true DE602008003796D1 (de) 2011-01-13

Family

ID=39816905

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008003796T Active DE602008003796D1 (de) 2007-05-31 2008-05-28 Tors mit einem oxidhalbleiter

Country Status (9)

Country Link
US (1) US8193045B2 (de)
EP (1) EP2153468B1 (de)
JP (1) JP5361249B2 (de)
KR (1) KR101092483B1 (de)
CN (1) CN101681928B (de)
AT (1) ATE490560T1 (de)
DE (1) DE602008003796D1 (de)
TW (1) TWI373142B (de)
WO (1) WO2008149873A1 (de)

Families Citing this family (131)

* Cited by examiner, † Cited by third party
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