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DE60218332D1 - Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung - Google Patents

Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung

Info

Publication number
DE60218332D1
DE60218332D1 DE60218332T DE60218332T DE60218332D1 DE 60218332 D1 DE60218332 D1 DE 60218332D1 DE 60218332 T DE60218332 T DE 60218332T DE 60218332 T DE60218332 T DE 60218332T DE 60218332 D1 DE60218332 D1 DE 60218332D1
Authority
DE
Germany
Prior art keywords
liquid crystal
crystal composition
production
semiconductor liquid
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60218332T
Other languages
English (en)
Other versions
DE60218332T2 (de
Inventor
A Paul Alivisatos
Liang-Shi Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California Berkeley
University of California San Diego UCSD
Original Assignee
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California Berkeley, University of California San Diego UCSD filed Critical University of California Berkeley
Publication of DE60218332D1 publication Critical patent/DE60218332D1/de
Application granted granted Critical
Publication of DE60218332T2 publication Critical patent/DE60218332T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/02—Liquid crystal materials characterised by optical, electrical or physical properties of the components, in general
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Crystal Substances (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
DE60218332T 2001-10-24 2002-10-23 Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung Expired - Lifetime DE60218332T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US34625301P 2001-10-24 2001-10-24
US346253P 2001-10-24
US39506402P 2002-07-12 2002-07-12
US395064P 2002-07-12
PCT/US2002/033970 WO2003060596A2 (en) 2001-10-24 2002-10-23 Semiconductor liquid crystal composition and methods for making the same

Publications (2)

Publication Number Publication Date
DE60218332D1 true DE60218332D1 (de) 2007-04-05
DE60218332T2 DE60218332T2 (de) 2007-10-25

Family

ID=26994770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60218332T Expired - Lifetime DE60218332T2 (de) 2001-10-24 2002-10-23 Halbleiter-flüssigkristallzusammensetzung und verfahren zu ihrer herstellung

Country Status (8)

Country Link
US (1) US6884478B2 (de)
EP (1) EP1446695B1 (de)
JP (1) JP4411078B2 (de)
AT (1) ATE354815T1 (de)
AU (1) AU2002365267B2 (de)
CA (1) CA2464832C (de)
DE (1) DE60218332T2 (de)
WO (1) WO2003060596A2 (de)

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EP2828194B8 (de) * 2012-03-19 2019-02-20 Nexdot Lichtemittierende vorrichtung mit abgeflachten anisotropen kolloidalen halbleiternanokristallen und verfahren zur herstellung solcher vorrichtungen
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Also Published As

Publication number Publication date
EP1446695A2 (de) 2004-08-18
WO2003060596A2 (en) 2003-07-24
EP1446695B1 (de) 2007-02-21
JP4411078B2 (ja) 2010-02-10
CA2464832A1 (en) 2003-07-24
US20030136943A1 (en) 2003-07-24
US6884478B2 (en) 2005-04-26
CA2464832C (en) 2011-01-25
DE60218332T2 (de) 2007-10-25
WO2003060596A3 (en) 2004-01-29
EP1446695A4 (de) 2005-03-16
AU2002365267B2 (en) 2007-06-14
ATE354815T1 (de) 2007-03-15
JP2005515273A (ja) 2005-05-26
AU2002365267A1 (en) 2003-07-30

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