DE69841449D1 - Sperrschicht-feldeffekttransistor aus silicumcarbid - Google Patents
Sperrschicht-feldeffekttransistor aus silicumcarbidInfo
- Publication number
- DE69841449D1 DE69841449D1 DE69841449T DE69841449T DE69841449D1 DE 69841449 D1 DE69841449 D1 DE 69841449D1 DE 69841449 T DE69841449 T DE 69841449T DE 69841449 T DE69841449 T DE 69841449T DE 69841449 D1 DE69841449 D1 DE 69841449D1
- Authority
- DE
- Germany
- Prior art keywords
- silicum
- carbide
- field effect
- effect transistor
- barrier field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1998/001185 WO1999048153A1 (en) | 1998-03-19 | 1998-03-19 | Silicon carbide semiconductor switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69841449D1 true DE69841449D1 (de) | 2010-03-04 |
Family
ID=14207836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69841449T Expired - Lifetime DE69841449D1 (de) | 1998-03-19 | 1998-03-19 | Sperrschicht-feldeffekttransistor aus silicumcarbid |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6384428B1 (de) |
| EP (1) | EP1065726B1 (de) |
| KR (1) | KR100342798B1 (de) |
| CN (1) | CN1286805A (de) |
| DE (1) | DE69841449D1 (de) |
| WO (1) | WO1999048153A1 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4360085B2 (ja) * | 2002-12-25 | 2009-11-11 | 株式会社デンソー | 炭化珪素半導体装置 |
| US6747291B1 (en) | 2003-01-10 | 2004-06-08 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on p-type silicon carbide using carbon films |
| WO2005053034A1 (ja) | 2003-11-25 | 2005-06-09 | Matsushita Electric Industrial Co., Ltd. | 半導体素子 |
| WO2006090432A1 (ja) * | 2005-02-22 | 2006-08-31 | Neomax Co., Ltd. | ＳｉＣ単結晶基板の製造方法 |
| JP4775102B2 (ja) | 2005-05-09 | 2011-09-21 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP4784178B2 (ja) * | 2005-07-01 | 2011-10-05 | 株式会社日立製作所 | 半導体装置 |
| JP5068009B2 (ja) | 2005-09-14 | 2012-11-07 | 三菱電機株式会社 | 炭化ケイ素半導体装置 |
| CN101132030B (zh) * | 2007-08-24 | 2011-08-03 | 中国科学院上海硅酸盐研究所 | 一种高耐压碳化硅光导开关 |
| WO2011089687A1 (ja) * | 2010-01-19 | 2011-07-28 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
| CA2740244A1 (en) * | 2010-01-27 | 2011-07-27 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing thereof |
| CN102157597A (zh) * | 2010-02-11 | 2011-08-17 | 中国科学院上海硅酸盐研究所 | 一种光控碳化硅光电导开关 |
| CA2779961A1 (en) * | 2010-12-27 | 2012-06-27 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device |
| JP6278549B2 (ja) * | 2012-03-30 | 2018-02-14 | 富士電機株式会社 | 半導体装置 |
| JP2016004955A (ja) * | 2014-06-19 | 2016-01-12 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
| CN104737912B (zh) * | 2015-03-31 | 2017-09-15 | 临沂大学 | 一种非洲菊组培快繁培养基及其培育方法 |
| JP6745458B2 (ja) * | 2015-04-15 | 2020-08-26 | パナソニックＩｐマネジメント株式会社 | 半導体素子 |
| US9773924B2 (en) | 2015-04-22 | 2017-09-26 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having barrier region and edge termination region enclosing barrier region |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63289960A (ja) * | 1987-05-22 | 1988-11-28 | Fujitsu Ltd | 電界効果型半導体装置 |
| JP3267983B2 (ja) * | 1991-02-14 | 2002-03-25 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP3146694B2 (ja) | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法 |
| JP2910573B2 (ja) | 1993-09-10 | 1999-06-23 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
| DE69534888T2 (de) * | 1994-04-06 | 2006-11-02 | Denso Corp., Kariya | Herstellungsverfahren für Halbleiterbauelement mit Graben |
| WO1995034915A1 (en) * | 1994-06-13 | 1995-12-21 | Abb Research Ltd. | Semiconductor device in silicon carbide |
| US5736753A (en) * | 1994-09-12 | 1998-04-07 | Hitachi, Ltd. | Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide |
| JP3158973B2 (ja) * | 1995-07-20 | 2001-04-23 | 富士電機株式会社 | 炭化けい素縦型ｆｅｔ |
| DE19636302C2 (de) * | 1995-09-06 | 1998-08-20 | Denso Corp | Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung |
| JP3471509B2 (ja) * | 1996-01-23 | 2003-12-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| JPH10107263A (ja) * | 1996-09-27 | 1998-04-24 | Fuji Electric Co Ltd | 絶縁ゲート型炭化ケイ素半導体装置 |
| JPH10125904A (ja) * | 1996-10-17 | 1998-05-15 | Denso Corp | 炭化珪素半導体装置 |
-
1998
- 1998-03-19 WO PCT/JP1998/001185 patent/WO1999048153A1/ja active IP Right Grant
- 1998-03-19 CN CN98813915A patent/CN1286805A/zh active Pending
- 1998-03-19 US US09/646,305 patent/US6384428B1/en not_active Expired - Lifetime
- 1998-03-19 EP EP98909765A patent/EP1065726B1/de not_active Expired - Lifetime
- 1998-03-19 KR KR1020007010289A patent/KR100342798B1/ko not_active Expired - Fee Related
- 1998-03-19 DE DE69841449T patent/DE69841449D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010041965A (ko) | 2001-05-25 |
| EP1065726B1 (de) | 2010-01-13 |
| KR100342798B1 (ko) | 2002-07-03 |
| CN1286805A (zh) | 2001-03-07 |
| US6384428B1 (en) | 2002-05-07 |
| WO1999048153A1 (en) | 1999-09-23 |
| EP1065726A1 (de) | 2001-01-03 |
| EP1065726A4 (de) | 2006-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |