DE69016080D1 - Halbleiteranordnung mit einem in eine Kunststoffhülle eingebetteten Halbleiterkörper. - Google Patents
Halbleiteranordnung mit einem in eine Kunststoffhülle eingebetteten Halbleiterkörper.Info
- Publication number
- DE69016080D1 DE69016080D1 DE69016080T DE69016080T DE69016080D1 DE 69016080 D1 DE69016080 D1 DE 69016080D1 DE 69016080 T DE69016080 T DE 69016080T DE 69016080 T DE69016080 T DE 69016080T DE 69016080 D1 DE69016080 D1 DE 69016080D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- plastic shell
- body embedded
- arrangement
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8900989A NL8900989A (nl) | 1989-04-20 | 1989-04-20 | Halfgeleiderinrichting met een in een kunststof omhulling ingebed halfgeleiderlichaam. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69016080D1 true DE69016080D1 (de) | 1995-03-02 |
| DE69016080T2 DE69016080T2 (de) | 1995-09-21 |
Family
ID=19854512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69016080T Expired - Lifetime DE69016080T2 (de) | 1989-04-20 | 1990-04-12 | Halbleiteranordnung mit einem in eine Kunststoffhülle eingebetteten Halbleiterkörper. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5117278A (de) |
| EP (1) | EP0393757B1 (de) |
| JP (1) | JP3020107B2 (de) |
| KR (1) | KR0152999B1 (de) |
| DE (1) | DE69016080T2 (de) |
| NL (1) | NL8900989A (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07302912A (ja) | 1994-04-29 | 1995-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JPH08162528A (ja) * | 1994-10-03 | 1996-06-21 | Sony Corp | 半導体装置の層間絶縁膜構造 |
| US6800875B1 (en) | 1995-11-17 | 2004-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-luminescent display device with an organic leveling layer |
| TW384412B (en) * | 1995-11-17 | 2000-03-11 | Semiconductor Energy Lab | Display device |
| US5940732A (en) * | 1995-11-27 | 1999-08-17 | Semiconductor Energy Laboratory Co., | Method of fabricating semiconductor device |
| US6294799B1 (en) * | 1995-11-27 | 2001-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| TW309633B (de) * | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
| US6225218B1 (en) | 1995-12-20 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP3725266B2 (ja) | 1996-11-07 | 2005-12-07 | 株式会社半導体エネルギー研究所 | 配線形成方法 |
| US6475836B1 (en) * | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6252290B1 (en) * | 1999-10-25 | 2001-06-26 | Chartered Semiconductor Manufacturing Ltd. | Method to form, and structure of, a dual damascene interconnect device |
| EP3872851B1 (de) | 2020-02-27 | 2025-04-30 | Infineon Technologies Austria AG | Schutzkappe für gehäuse mit wärmeschnittstellenmaterial |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53148972A (en) * | 1977-06-01 | 1978-12-26 | Hitachi Ltd | Manufacture of resin shielding type semiconductor device |
| US4134125A (en) * | 1977-07-20 | 1979-01-09 | Bell Telephone Laboratories, Incorporated | Passivation of metallized semiconductor substrates |
| JPS54149469A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Semiconductor device |
| JPS6018145B2 (ja) * | 1980-09-22 | 1985-05-09 | 株式会社日立製作所 | 樹脂封止型半導体装置 |
| JPS59191353A (ja) * | 1983-04-15 | 1984-10-30 | Hitachi Ltd | 多層配線構造を有する電子装置 |
| JPS6010644A (ja) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6030153A (ja) * | 1983-07-28 | 1985-02-15 | Toshiba Corp | 半導体装置 |
| JPS6080264A (ja) * | 1983-10-07 | 1985-05-08 | Toshiba Corp | 半導体装置 |
| US4829363A (en) * | 1984-04-13 | 1989-05-09 | Fairchild Camera And Instrument Corp. | Structure for inhibiting dopant out-diffusion |
| US4686559A (en) * | 1984-08-03 | 1987-08-11 | Advanced Micro Devices, Inc. | Topside sealing of integrated circuit device |
| JPS6234920A (ja) * | 1985-08-07 | 1987-02-14 | Toshiba Corp | エポキシ樹脂組成物およびそれを用いた樹脂封止型半導体装置 |
| US4855801A (en) * | 1986-08-22 | 1989-08-08 | Siemens Aktiengesellschaft | Transistor varactor for dynamics semiconductor storage means |
| US4795722A (en) * | 1987-02-05 | 1989-01-03 | Texas Instruments Incorporated | Method for planarization of a semiconductor device prior to metallization |
| JPS63258060A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体記憶装置 |
| JP2735193B2 (ja) * | 1987-08-25 | 1998-04-02 | 株式会社東芝 | 不揮発性半導体装置及びその製造方法 |
| JPS6472557A (en) * | 1987-09-11 | 1989-03-17 | Seiko Instr & Electronics | Image sensor |
-
1989
- 1989-04-20 NL NL8900989A patent/NL8900989A/nl not_active Application Discontinuation
-
1990
- 1990-04-12 DE DE69016080T patent/DE69016080T2/de not_active Expired - Lifetime
- 1990-04-12 EP EP90200894A patent/EP0393757B1/de not_active Expired - Lifetime
- 1990-04-17 KR KR1019900005304A patent/KR0152999B1/ko not_active Expired - Fee Related
- 1990-04-18 JP JP2102761A patent/JP3020107B2/ja not_active Expired - Lifetime
-
1991
- 1991-06-06 US US07/713,023 patent/US5117278A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5117278A (en) | 1992-05-26 |
| EP0393757A1 (de) | 1990-10-24 |
| KR0152999B1 (ko) | 1998-10-15 |
| EP0393757B1 (de) | 1995-01-18 |
| DE69016080T2 (de) | 1995-09-21 |
| NL8900989A (nl) | 1990-11-16 |
| JP3020107B2 (ja) | 2000-03-15 |
| KR900017154A (ko) | 1990-11-15 |
| JPH02301157A (ja) | 1990-12-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., , TW |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: TER MEER STEINMEISTER & PARTNER GBR PATENTANWAELTE |