GB1265318A - - Google Patents
Info
- Publication number
- GB1265318A GB1265318A GB2294868A GB1265318DA GB1265318A GB 1265318 A GB1265318 A GB 1265318A GB 2294868 A GB2294868 A GB 2294868A GB 1265318D A GB1265318D A GB 1265318DA GB 1265318 A GB1265318 A GB 1265318A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloy
- size
- thermoelectric
- hot
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000007731 hot pressing Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000003801 milling Methods 0.000 abstract 1
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000007750 plasma spraying Methods 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
1,265,318. Thermoelectric elements. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. 5 May, 1969 [14 May, 1968], No. 22948/68. Heading H1K. A thermoelectric element is made of a polycrystalline alloy in which at least a proportion of the grains are in the size range 0À01 to 10 Á or include substructures defining lattice boundaries spaced by distances within this range, so that the thermal conductivity of the element is lower than in a single crystal of the alloy and the thermoelectric figure of merit is relatively high. The alloy is preferably Ge/Si heavily doped with P or B. In the preferred method of manufacture, a body of P or B doped Ge/Si is initially formed by melting and shaking in vacuum and then quenching or chill casting. This body is then bulk milled to a particle size of 0À1 to 10 Á and further reduction in size may be obtained by milling in a gas mill. The resulting powder is finally hot pressed and cooled under carefully controlled conditions to produce a thermoelectric element having the desired polycrystalline structure. The initial powder for the hot pressing process may alternatively be formed by deposition from mixed silicon tetrachloride and germanium tetrachloride gases in a hot reaction cell. The desired grain size may also be obtained by allowing the alloy to solidify in the presence of ultra-sonic waves which induce density fluctuations encouraging grain nucleation on the correct scale, or by solidifying from very small amounts of liquid at a time, deposited on the growing ingot by plasma spraying or drip feeding.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2294868 | 1968-05-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1265318A true GB1265318A (en) | 1972-03-01 |
Family
ID=10187656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2294868A Expired GB1265318A (en) | 1968-05-14 | 1968-05-14 |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT294945B (en) |
| CA (1) | CA923798A (en) |
| DE (1) | DE1924486A1 (en) |
| FR (1) | FR2008498A1 (en) |
| GB (1) | GB1265318A (en) |
| NL (1) | NL6907365A (en) |
| SE (1) | SE357109B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1039557A4 (en) * | 1997-10-24 | 2007-02-21 | Neomax Co Ltd | SILICON-CONDUCTIVE MATERIAL AND METHOD FOR MANUFACTURING THE SAME |
| WO2019137953A3 (en) * | 2018-01-12 | 2019-11-28 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Thermoelectric material and process for producing a thermoelectric material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4129871C2 (en) * | 1991-09-07 | 1995-10-19 | Webasto Ag Fahrzeugtechnik | Process for the production of GeSi thermocouples |
-
1968
- 1968-05-14 GB GB2294868A patent/GB1265318A/en not_active Expired
-
1969
- 1969-05-13 AT AT457769A patent/AT294945B/en not_active IP Right Cessation
- 1969-05-13 NL NL6907365A patent/NL6907365A/xx unknown
- 1969-05-13 SE SE06790/69A patent/SE357109B/xx unknown
- 1969-05-13 DE DE19691924486 patent/DE1924486A1/en active Pending
- 1969-05-13 FR FR6915533A patent/FR2008498A1/fr not_active Withdrawn
- 1969-05-13 CA CA051382A patent/CA923798A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1039557A4 (en) * | 1997-10-24 | 2007-02-21 | Neomax Co Ltd | SILICON-CONDUCTIVE MATERIAL AND METHOD FOR MANUFACTURING THE SAME |
| WO2019137953A3 (en) * | 2018-01-12 | 2019-11-28 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Thermoelectric material and process for producing a thermoelectric material |
Also Published As
| Publication number | Publication date |
|---|---|
| CA923798A (en) | 1973-04-03 |
| NL6907365A (en) | 1969-11-18 |
| DE1924486A1 (en) | 1969-11-27 |
| AT294945B (en) | 1971-12-10 |
| SE357109B (en) | 1973-06-12 |
| FR2008498A1 (en) | 1970-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |