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GB2038086A - Amorphous semiconductor devices - Google Patents

Amorphous semiconductor devices Download PDF

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Publication number
GB2038086A
GB2038086A GB7849117A GB7849117A GB2038086A GB 2038086 A GB2038086 A GB 2038086A GB 7849117 A GB7849117 A GB 7849117A GB 7849117 A GB7849117 A GB 7849117A GB 2038086 A GB2038086 A GB 2038086A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
germanium
elemental
halogen
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7849117A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB7849117A priority Critical patent/GB2038086A/en
Priority to DE2950846A priority patent/DE2950846C2/en
Publication of GB2038086A publication Critical patent/GB2038086A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Semiconductor devices, and in particular solar cells or other photosensitive devices, are fabricated from amorphous material which comprises at least one elemental semiconductor and at least one halogen. Specific examples are elemental germanium or a germanium/silicon compound. One method of deposition is plasma aided chemical vapour deposition from a mixture of gases, e.g. germane or germane and silicon with a halogen bearing gas.

Description

SPECIFICATION Semiconductor devices This invention relates to the fabrication of semiconductor devices, and finds particular application in solar cells and other photosensitive devices.
The use of plasma aided chemical vapour deposition techniques (also known as r.f. glow discharge) enables both elemental and alloyed semi-conductor materials to be deposited in amorphous states on suitable substrates. The choice of semiconductor materials depends on the particular application. For example, in solar cells it is necessary to match the absorption characteristics of the material to the solar spectrum whilst providing a satisfactory energy band gap to make devices with the hightest possible efficiency.
According to the present invention there is provided a methof of fabricating semiconductor devices including the step of depositing a layer of amorphous material being a alloy of at least one elemental semiconductor and at least one halogen on a conducting substrate.
In a preferred example of the invention the elemental semiconductor is germanium.
In another example of the invention the semiconductor material is a alloy of elemental germanium and silicon.
Germanium and germanium/silicon alloys deposited by glow discharge from germane or germane/silane mixtures (and hence including hydrogen), even with rather small germanium content, show negligible photo-conductivity compared with pure silicon. This can be interpreted in terms of the Ge-H bond being weak compared with the Si-H bond, with the result that dangling bonds on germanium atoms are not stably hydrogenated in amorphous germanium and its alloys, and with the further consequence that these materials have a large density of states in the gap. It would therefore not be possible to prepare solar cells from them even though their absorption edge could be well matched to the solar spectrum.Clearly this situation would alter if a stronger bonding element, such as a halogen, were used to satisfy germanium dangling bonds. (Even the Ge-l bond is far more stable than Ge-H).
The deposition of amorphous germanium or germanium/silicon alloys from germane or a germane/silane mixture is readily accom plished by plasma aided chemical vapour de position. The introduction of a further gas, bearing a halogen, for example fluorine, enables a halogenated amorphous semiconductor to be deposited.
Other deposition techniques, such as sputtering, for example in a hydrogen/halogen mixture, may also be used. The proportions of the starting materials are chosen to give absorption characteristics tailored to the wave lengths of the incident radiation.
The invention is not limited to photosensitive devices since, with a p-n junction region in the deposited material rectification is present. Used in a non-optical context the halogenated amorphous material can be fabricated as a semiconductor diode.
The term "alloy" refers in this specification to an intimate mixture of the elements concerned deposited by the method given and may or may not have chemical bonding.

Claims (8)

1. A method of fabricating semiconductor devices including the step of depositing a layer of amorphous material being a alloy of at least one elemental semiconductor and at least one halogen on a conducting substrate.
2. A method according to claim 1 wherein the elemental semiconductor is germanium.
3. A method according to claim 1 wherein the semiconductor material is a alloy of elemental germanium and silicon.
4. A method according to claim 1, 2 or 3 wherein the halogen is fluorine.
5. A method according to any preceding claim wherein the elemental semiconductor is deposited by plasma aided chemical vapour deposition.
6. A method according to any preceding claim wherein the elemental semiconductor is deposited from a hydride of the semiconductor.
7. A method of fabricating a semiconductor device substantially as described.
8. A photosensitive device comprising on a substrate a layer of elemental germanium or a germanium/silicon alloy and incorporating a halogen.
GB7849117A 1978-12-19 1978-12-19 Amorphous semiconductor devices Withdrawn GB2038086A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB7849117A GB2038086A (en) 1978-12-19 1978-12-19 Amorphous semiconductor devices
DE2950846A DE2950846C2 (en) 1978-12-19 1979-12-18 Process for the production of amorphous semiconductor layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7849117A GB2038086A (en) 1978-12-19 1978-12-19 Amorphous semiconductor devices

Publications (1)

Publication Number Publication Date
GB2038086A true GB2038086A (en) 1980-07-16

Family

ID=10501817

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7849117A Withdrawn GB2038086A (en) 1978-12-19 1978-12-19 Amorphous semiconductor devices

Country Status (2)

Country Link
DE (1) DE2950846C2 (en)
GB (1) GB2038086A (en)

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490019A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD AND DEVICE FOR INCREASING THE INTERVAL OF BANDS OF PHOTOSENSITIVE AMORPHOUS ALLOYS AND ALLOYS OBTAINED
FR2490017A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD FOR MANUFACTURING PHOTOSENSITIVE AMORPHOUS GERMANIUM ALLOYS, DEVICE FOR IMPLEMENTING THE METHOD AND ALLOYS OBTAINED
US4492810A (en) * 1978-03-08 1985-01-08 Sovonics Solar Systems Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
US4561171A (en) * 1982-04-06 1985-12-31 Shell Austria Aktiengesellschaft Process of gettering semiconductor devices
FR2586505A1 (en) * 1985-08-26 1987-02-27 Anritsu Corp THIN-FILM ELECTRICAL CONDUCTOR AND METHOD FOR MANUFACTURING THE SAME
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4735822A (en) * 1985-12-28 1988-04-05 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4751192A (en) * 1985-12-11 1988-06-14 Canon Kabushiki Kaisha Process for the preparation of image-reading photosensor
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4766091A (en) * 1985-12-28 1988-08-23 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4771015A (en) * 1985-12-28 1988-09-13 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4772570A (en) * 1985-12-28 1988-09-20 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
US4798809A (en) * 1985-12-11 1989-01-17 Canon Kabushiki Kaisha Process for preparing photoelectromotive force member
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
US4801474A (en) * 1986-01-14 1989-01-31 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4803093A (en) * 1985-03-27 1989-02-07 Canon Kabushiki Kaisha Process for preparing a functional deposited film
US4812328A (en) * 1985-12-25 1989-03-14 Canon Kabushiki Kaisha Method for forming deposited film
US4812331A (en) * 1985-12-16 1989-03-14 Canon Kabushiki Kaisha Method for forming deposited film containing group III or V element by generating precursors with halogenic oxidizing agent
US4812325A (en) * 1985-10-23 1989-03-14 Canon Kabushiki Kaisha Method for forming a deposited film
US4818560A (en) * 1985-12-28 1989-04-04 Canon Kabushiki Kaisha Method for preparation of multi-layer structure film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US4818564A (en) * 1985-10-23 1989-04-04 Canon Kabushiki Kaisha Method for forming deposited film
US4822636A (en) * 1985-12-25 1989-04-18 Canon Kabushiki Kaisha Method for forming deposited film
US4830890A (en) * 1985-12-24 1989-05-16 Canon Kabushiki Kaisha Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film
US4835005A (en) * 1983-08-16 1989-05-30 Canon Kabushiki Kaishi Process for forming deposition film
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
US4842897A (en) * 1985-12-28 1989-06-27 Canon Kabushiki Kaisha Method for forming deposited film
US4844950A (en) * 1985-12-18 1989-07-04 Canon Kabushiki Kaisha Method for forming a metal film on a substrate
US4849249A (en) * 1985-08-15 1989-07-18 Canon Kabushiki Kaisha Deposited film forming process and deposited film forming device
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4861623A (en) * 1985-12-18 1989-08-29 Canon Kabushiki Kaisha Method for forming deposited film by generating precursor with halogenic oxidizing agent
US4865883A (en) * 1985-12-17 1989-09-12 Canon Kabushiki Kaisha Method for forming a deposited film containing IN or SN
US4868014A (en) * 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4869931A (en) * 1985-12-16 1989-09-26 Canon Kabushiki Kaisha Method for forming deposited films of group II-VI compounds
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US5322568A (en) * 1985-12-28 1994-06-21 Canon Kabushiki Kaisha Apparatus for forming deposited film
US5366554A (en) * 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US5803974A (en) * 1985-09-26 1998-09-08 Canon Kabushiki Kaisha Chemical vapor deposition apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
DE3437120A1 (en) * 1984-10-10 1986-04-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD FOR THE PRODUCTION OF SEMICONDUCTOR LAYERS ON SEMICONDUCTOR BODIES OR FOR THE DIFFUSION OF INTERFERENCE POINTS IN THE SEMICONDUCTOR BODY

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492810A (en) * 1978-03-08 1985-01-08 Sovonics Solar Systems Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
FR2490019A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD AND DEVICE FOR INCREASING THE INTERVAL OF BANDS OF PHOTOSENSITIVE AMORPHOUS ALLOYS AND ALLOYS OBTAINED
FR2490017A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD FOR MANUFACTURING PHOTOSENSITIVE AMORPHOUS GERMANIUM ALLOYS, DEVICE FOR IMPLEMENTING THE METHOD AND ALLOYS OBTAINED
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
US4561171A (en) * 1982-04-06 1985-12-31 Shell Austria Aktiengesellschaft Process of gettering semiconductor devices
AT380974B (en) * 1982-04-06 1986-08-11 Shell Austria METHOD FOR SETTING SEMICONDUCTOR COMPONENTS
US5645947A (en) * 1983-08-16 1997-07-08 Canon Kabushiki Kaisha Silicon-containing deposited film
US4835005A (en) * 1983-08-16 1989-05-30 Canon Kabushiki Kaishi Process for forming deposition film
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
US4803093A (en) * 1985-03-27 1989-02-07 Canon Kabushiki Kaisha Process for preparing a functional deposited film
US4849249A (en) * 1985-08-15 1989-07-18 Canon Kabushiki Kaisha Deposited film forming process and deposited film forming device
FR2586505A1 (en) * 1985-08-26 1987-02-27 Anritsu Corp THIN-FILM ELECTRICAL CONDUCTOR AND METHOD FOR MANUFACTURING THE SAME
US4835059A (en) * 1985-08-26 1989-05-30 Anritsu Corporation Thin film conductor which contains silicon and germanium as major components and method of manufacturing the same
US4766008A (en) * 1985-08-26 1988-08-23 Anritsu Corporation Method of manufacturing thin film conductor which contains silicon and germanium as major components
GB2179790A (en) * 1985-08-26 1987-03-11 Anritsu Corp Thin film conductor
US5803974A (en) * 1985-09-26 1998-09-08 Canon Kabushiki Kaisha Chemical vapor deposition apparatus
US4812325A (en) * 1985-10-23 1989-03-14 Canon Kabushiki Kaisha Method for forming a deposited film
US4818564A (en) * 1985-10-23 1989-04-04 Canon Kabushiki Kaisha Method for forming deposited film
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
US4798809A (en) * 1985-12-11 1989-01-17 Canon Kabushiki Kaisha Process for preparing photoelectromotive force member
US4751192A (en) * 1985-12-11 1988-06-14 Canon Kabushiki Kaisha Process for the preparation of image-reading photosensor
US4869931A (en) * 1985-12-16 1989-09-26 Canon Kabushiki Kaisha Method for forming deposited films of group II-VI compounds
US4812331A (en) * 1985-12-16 1989-03-14 Canon Kabushiki Kaisha Method for forming deposited film containing group III or V element by generating precursors with halogenic oxidizing agent
US4865883A (en) * 1985-12-17 1989-09-12 Canon Kabushiki Kaisha Method for forming a deposited film containing IN or SN
US4844950A (en) * 1985-12-18 1989-07-04 Canon Kabushiki Kaisha Method for forming a metal film on a substrate
US4861623A (en) * 1985-12-18 1989-08-29 Canon Kabushiki Kaisha Method for forming deposited film by generating precursor with halogenic oxidizing agent
US4830890A (en) * 1985-12-24 1989-05-16 Canon Kabushiki Kaisha Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith
US4812328A (en) * 1985-12-25 1989-03-14 Canon Kabushiki Kaisha Method for forming deposited film
US4822636A (en) * 1985-12-25 1989-04-18 Canon Kabushiki Kaisha Method for forming deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US5322568A (en) * 1985-12-28 1994-06-21 Canon Kabushiki Kaisha Apparatus for forming deposited film
US4771015A (en) * 1985-12-28 1988-09-13 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4772570A (en) * 1985-12-28 1988-09-20 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4818560A (en) * 1985-12-28 1989-04-04 Canon Kabushiki Kaisha Method for preparation of multi-layer structure film
US4766091A (en) * 1985-12-28 1988-08-23 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4842897A (en) * 1985-12-28 1989-06-27 Canon Kabushiki Kaisha Method for forming deposited film
US4735822A (en) * 1985-12-28 1988-04-05 Canon Kabushiki Kaisha Method for producing an electronic device having a multi-layer structure
US4801474A (en) * 1986-01-14 1989-01-31 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4868014A (en) * 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US5366554A (en) * 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film

Also Published As

Publication number Publication date
DE2950846C2 (en) 1985-01-17
DE2950846A1 (en) 1980-07-10

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)