GB2285336A - Polysilicon/silicide etching method - Google Patents
Polysilicon/silicide etching method Download PDFInfo
- Publication number
- GB2285336A GB2285336A GB9426147A GB9426147A GB2285336A GB 2285336 A GB2285336 A GB 2285336A GB 9426147 A GB9426147 A GB 9426147A GB 9426147 A GB9426147 A GB 9426147A GB 2285336 A GB2285336 A GB 2285336A
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- United Kingdom
- Prior art keywords
- film
- etching
- sccm
- polycrystalline silicon
- poly
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- 238000005530 etching Methods 0.000 title claims abstract description 67
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 51
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 28
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 26
- 229920005591 polysilicon Polymers 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract description 26
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract description 26
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 abstract 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000000460 chlorine Substances 0.000 abstract 2
- 229910052801 chlorine Inorganic materials 0.000 abstract 2
- 239000001307 helium Substances 0.000 abstract 2
- 229910052734 helium Inorganic materials 0.000 abstract 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- -1 SF6 Chemical compound 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A method of fabricating a semiconductor device having a poly-cide layer consisting of a metal silicide film (104) and a polycrystalline silicon (103). The metal silicide (eg tungsten silicide) is selectively etched by use of a gas containing chlorine, oxygen and helium. Preferably, the silicide film is etched under the conditions of Cl2:20 sccm, O2:6 sccm, He:14 sccm, pressure 0.02 Torr, and RF power density:1.1 W/cm<2>. Hydrogen bromide is used in addition to chlorine, oxygen and helium for etching polycrystalline silicon. The polycrystalline silicon film is etched under the conditions of Cl2:45 sccm, HBr:45 sccm, O2:1.2 sccm, He:2.8 sccm, pressure 0.1 Torr and RF power density:0.82 W/cm<2>. <IMAGE>
Description
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
The present invention relates to a method for fabricating a semiconductor device and, more particularly, to such a method including a step of dry-etching a composite film consisting of a polycrystalline silicon (poly-silicon) film and a metal silicide film. This composite film is called a poly-cide film.
In a semiconductor device, poly-silicon is used as an essential material to form a gate of a MOS transistor as well as a wiring layer. The layer made of polysilicon is, however, high in resistance, and a structure is requirea to decrease the resistance of that layer. To this end, the above-mentioned poly-cide film is widely used, since it has a sheet resistivity lower one digit order than that of the poly-silicon layer. Accordingly, a MOS transistor having a poly-cide gate represents good electrical characteristics.
In recent years, circuit elements such as MOS transistors and resistors in a semiconductor integrated circuit device have been formed in a fine pattern more and more. In accordance therewith, the thickness of the poly-cide film has been decreased and the fine patterning thereof is required scill more accurately.
For this purpose, such a method of patterning as shown in Fig. 10 is proposed. This method is disclosed in Japanese Laid-Open Patent No. Sho 61-168228. More specifically, as shown in Fig. 10A, a poly-cide film consisting of a poly-silicon film 403 and a tungsten silicide film 404 is formed on a silicon-oxide film 402 as a gate insulating film covering a silicon substrate 401, followed by forming a photoresist film. This film is then patterned to form a patterned photoresist film 405.
As shown in Fig. 10B, subsequently, the tungsten silicide film 404 is selectively etched by using the film 405 as a mask with an enchant gas containing fluorine such as SF6, and the poly-silicon film 403 is then etched with an etchant gas containing C12.
The photoresist film 405 is thereafter remove to thereby form a poly-cide gate.
During the etching of the silicide film 404, however, the poly-silicon film 403 is also etched by the SF6 etchant gas. This is because the etching rate of the polycrystalline silicon film 403 subject to SF6 is two times or more as large as that of the metal silicide film 404. For this reason, as shown in Fig. 10B, the side etching occurs in the polycrystalline silicon film 404 in the actual etching. Moreover, the SF6 etchant gate further etches the gate oxide film 402 because the selection ratio or selectivity in etching of the metal silicide film 404 to the silicon oxide film 402 is as low as 1 to 2. For this reason, the effective channel length is reduced undesirably, as also shown in Fig. 10B.
To solve the above problem, another method is disclosed in Japanese Laid-Open Patent No. Hei 4-105321.
This method will be described below in detail by referring to Fig. 11. First, as shown in Fig. llA, a silicon oxide film 502 as a gate insulating film is formed on a silicon substrate 501 by the thermal oxidation. Thereafter, a polycrystalline silicon film 503 having thickness of 200 nm and a tungsten silicide film 504 having thickness of 200 nm are successively formed on the oxide film 502, followed by forming a patterned photoresist film 505.
Then, the,semiconductor substrate or wafer is set in a parallel-plate-type RIE equipment and the substrate temperature is set to 600C to 1500C (800C in typical).
The tungsten silicide film 504 is then subjected to the dry-etching under the conditions of C12 : 89 sccm, O2 : 11 sccm, pressure: 0.05 Torr, and RF power density: 1.1 W/cm2 (Fig. llB) > , as shown in Fig. llB. Thereafter, the polycrystalline silicon film 503 is etched under the conditions of HBr: 100 sccm, pressure :0.2 Torr, and RF power density : 1.1 W/cm2, as shown in Fig. llC.
This method improves the uniformity of the etching of a metal silicide film 504 by setting the substrate temperature to 600C or higher and employing an etchant gas of C12 and 02, because the etching rate of a polycrystalline silicon film 503 becomes near to that of the metal silicide film-504 under this conditions.
Accordingly, it. is possible to adequately leave the polycrystalline silicon film 503 when the etching of the metal silicide film 504 is finished. As a result, a poly-cide gate is formed with in a desired size and pattern, as shown in Fig. llC.
However, under the conditions as described above, the uniformity in etching amount of the tungsten silicide film 504 is relatively poor. According to the experiences of the present inventor, it has been found that the etching amount of the tungsten silicide film 504 deviates from the designed value even by approximately +15% under the above conditions. For this reason, in order to completely remove the silicide film 504 except for a portion thereof covered with the resist layer 505, the poly-silicon film 504 is inevitably reduced in thickness.
Moreover, the etching rate of the silicide film 502 is still lower than that of the poly-silicon film 503, as described above. For this reason, the poly-silicon film 504 is also subjected to the side etching. As a result, a fine pattern of a poly-cide gate or a poly-cide wiring is not realized. This becomes more remarkable when the respective films are made thin for the purpose of a finer pattern.
It is therefore an object of the present invention to provide an improved method of fabricating a semiconductor device having a poly-cide layer.
It is another object of the present invention to provided a method of fabricating a semiconductor device having a step of enhancing the etching selectivity between a metal silicide film and a polycrystalline silicon film as well as the etching uniformity in the metal silicide film plane.
A method for fabricating a semiconductor device according to the present invention is featured by comprising the step of selectively etching a metal silicide film formed on a poly-silicon film by use of an etchant gas containing C12, 2 and He.
It is preferable to set the gas flow rate ratio of the etchant gas to Cl2 : O2 : He = 10 : 2-4 : 6-8 and the pressure of the gas to 0.02 Torr or less.
With the above feature, that is, by employing the etching gas containing C12, 2 and He, it has been confirmed that the etching uniformity of a metal silicide film is enhanced and the etching selectivity of the metal silicide film to the polycrystalline silicon film is also enhanced. Thus, a poly-cide layer as a gate and/or a wiring is formed in a fine pattern with a substantially designed value.
The above and other objects, features and advantages of the present invention will be more apparent from the following description, by way of exartple, taken m conjunction with the accatpanying a-a- < sngs? in which: Figs. 1A to 1C are sectional views indicative of respective steps according to a method of a first embodiment of the present invention;
Fig. 2 is a sectional view of a dry etching equipment employed for embodiments of the present invention;
Figs. 3A to 3C are sectional views indicative of steps according to a method of a second embodiment of the present invention;
Fig. 4 is a graph indicative of an etching characteristic of a silicide layer in the present invention;
Fig. 5 is a graph indicative of etching characteristics of respective layers in the present invention;
Fig. 6 is a graph indicative of other, etching characteristics of respective layers in the present invention;
Fig. 7 is a graph indicative of still other etching characteristics of respective layers in the present invention;
Fig. 8 is a graph indicative of yet other etching characteristics of respective layers in the present invention;
Fig. 9 is a graph indicative of yet other etching characteristics of respective layers in the present invention;
Figs. 10A and 10B are sectional views of a method according to a prior are; and
Figs. 11A to llB are sectional views of a method according to another prior art.
Before describing in detail the embodiments of the present invention, description on the dry-etching of a metal silicide film will be first made below with reference to Figs. 4 to 9 in order to facilitate the understanding, merits and effects of the present invention.
As described above, the present invention employs an etchant gas containing C12, 2 and He as a gas for etching a metal silicide film.
Referring to Fig. 4, there is shown a graph indicative of the He flow rate dependency when a tungsten silicide film is etched with a mixed gas of C12, 02, and He. As shown therein, a preferable etching uniformity of +6 - 7% is obtained when the He flow rate ranges between 12 and 16 sccm. From this result, it is found that a preferable etching uniformity is obtained by adding He with an amount of 12 - 16 sccm.
Fig. 5 shows the pressure dependency of etching rates of materials to be etched when they are etched with a mixed gas of C12, 02, and He. From the result, it is found that the etching rate of a tungsten silicide film tends to approach to that of a polycrystalline silicon film by lowering the pressure.
Fig. 6 shows the C12 flow rate dependency of etching rates of materials to be etched when they are etched with a mixed gas of C12, 021 and He. From the result, it is found that the etching rate of a tungsten silicide film tends to approach to that of a polycrystalline silicon film by decreasing the C12 flow rate.
To preferably etch a thin poly-cide film, it is necessary to decrease the selection ratio in etching of a tungsten silicide film to a polycrystalline silicon film, that is, the value of tungsten-silicide-film etching rate to polycrystalline-silicon-film etching rate.
Therefore, it is found from Figs. 5 and 6 that the object of the present invention of this application can be achieved by lowering the pressure of a process gas and decreasing the C12 flow rate.
In accordance with the above point of view, the gas pressure is lowered, the C12 flow rate is decreased, and experiments of changing the etching conditions are repeated in order to find the optimum gas flow rate ratio.
Fig. 7 shows the etching rate of each material to be etched and the RF power density dependency of the etching rate uniformity. Figs. 8 and 9 show the etching rate of each material to be etched and the 2 and He flow rate dependencies of the etching rate uniformity respectively. From these results, it is found that the both etching rates, of a tungsten silicide film and a polycrystalline silicon film come to approx. 2,000 admin and the etching uniformity of the tungsten silicide film is obtained as approx. +6.5% by setting the gas flow rate ratio to Cl2 O2 : He = 10 : 2 - 4 : 6 - 8 when the RF power density is 1.1 W/cm2.
Therefore, when etching a poly-cide film made of a tungsten silicide film with the thickness of 1,000 A0 and a polycrystalline silicon film with the thickness of 500 , it is possible to decrease the fluctuation of etching of the tungsten silicide film to approx. +65 that is, approx. 130 in the silicon substrate plane and the thickness of the remaining polycrystalline silicon film when the etching of the tungsten silicide film is finished to approx. 370-500 A0 by setting the etching condition as shown above. Therefore, it is possible to completely correspond to the decrease of the poly-cide film thickness and the in-plane level difference by the above remaining polycrystalline silicon film.
Referring now to Fig. 1, there is shown a method according to the first embodiment of the present invention.
First, as shown in Fig. 1A, a silicon oxide film 102 as a gate insulating film is formed on a silicon substrate 101 by the thermal oxidization. A polycrystalline silicon or poly-silicon film 103 having the thickness of 500 A0 and a tungsten silicide film 104 having the thickness of 1,000 are then successively formed on the film 102, followed by forming a patterned photoresist film 105 on the film 104.
The semiconductor substrate or wafer thus formed is loaded into a cathode-couple-type RIE equipment as shown in Fig. 2. More specifically, the substrate is place on a bottom electrode 203 in a chamber 201 of the
RIE equipment which also has a top electrode 202 facing the bottom electrode 203. This equipment further has a gas feed port 210 at its top and a gas exhaust port 211 at its bottom and also has an RF power source 205 connected to the bottom electrode 202 through a matching box 204.
An etchant gas containing C12, O2 and He is introduced through the port 210 in accordance with the present invention.
In this embodiment, the tungsten silicide film 104 is etched under the conditions of C12:20 sccm, O2:6 sccm,
He:14 sccm, pressure:0.02 Torr, and RF power density:l.l
W/cm2. As a result, a portion of the silicide film 104 covered with the resist film 105 is left, as shown in
Fig. 1B. Subsequently, the polycrystalline silicon film 103 is etched under the conditions of C12:45 sccm,
HBr:45 sccm, O2:1.2 sccm, He:2.8 sccm, pressure:0.1 Torr, and RF power density:0.82 W/cm by using the remained silicide film 104 and the resist film 105 as a mask, as shown in Fig. 1C.
In the case of etching of a tungsten silicide film under the above conditions, the in-plane etching uniformity is as high as +6.5%, and the etching rate of the film 104 is approximately equal to that of a polycrystalline silicon film 103. Accordingly, the end point of etching of the respective films is easily detected, which will be described in more detail later. Therefore, as shown in
Fig. lB, it is possible to finish the etching of the tungsten silicide film 104 before the polycrystalline silicon film 103 is considerably etched. In the case of etching the polycrystalline silicon film 103 under the above conditions, it is possible to set the etching ratio of the poly-silicon film 103 to the oxide film 102 to be a considerably high such as 40. Therefore, as shown in Fig. 1C, such a poly-cide film can be obtained in which the polycrystalline silicon film 103 is free from the side etching and the silicon oxide film 102 substantially remains.
The etching end points of the silicide film 104 and the poly-silicon film 103 are detected by monitoring the emitted-light wavelength of 440 nm at the interface between the tungsten silicide film 104 and the polycrystalline silicon film 103 and that of 307.3 nm at the interface between the polycrystalline silicon film 103 and the silicon oxide film 102, respectively.
In this embodiment, the etching of the tungsten silicide film 104 is terminated when the intensity of the emitted light with the wavelength of 440 nm is increased and then made constant. As the result of observation with a scanning electron microscope at that point of time, it is found that the tungsten silicide film 104 is completely removed. At this time, the thickness of the polycrystalline silicon film which has been subjected to etching is 100 A0 or less.
Turning to Fig. 3, description will be made on the method of the second embodiment of the present invention.
First, as shown in Fig. 3A, a silicon oxide film 302 is formed on a silicon substrate 301 by the thermal oxidization. A polycrystalline silicon film 303 with the thickness of 500 , a tungsten silicide film 304 with the thickness of 1,000 A, and a silicon oxide film 306 with the thickness of 1,000 are then formed in that order on the film 302, followed by forming a patterned photoresist film 305. Then, the silicon substrate is loaded and thus mounted on the bottom electrode 203 of the RIE system shown in Fig. 2 to carry out the selective etching.
First, the silicon oxide film 306 is etched under the conditions of CF4:100 sccm, pressure:0.1 Torr, and RF power density:2.75 W/cm2 and then the tungsten silicide film 304 is etched under the conditions of C12:20 sccm, O2:6 sccm,
He:14 sccm, pressure:0.02 Torr, and RF power density:l.l W/cm2 (see Fig. 3B). Then, the photoresist 305 is removed by, for example, 2 plasma. Then, the polycrystalline silicon film 303 is etched under the conditions of
C12:45 sccm, HBr:45 sccm, O2:1.2 sccm, He:2.8 sccm, 2 pressure:0.1 Torr, and RF power density:0.82 W/cm Resultingly, as shown in Fig. 3C, a desired poly-cide layer is obtained in which the polycrystalline silicon film 303 is free from side etching and the silicon oxide film 302 is only slightly etched.
The present embodiment is superior in the selectivity to the previous embodiment, because the photoresist 305 is removed before etching the polycrystalline silicon film 303 and the silicon oxide film 302.
It is apparent that the present invention is not restricted to the above embodiments. Various modifications and changes are allowed without departing from the scope of the present invention as set forth in the appended claims. For example, in place of a tungsten silicide films it is possible to use ather refractory silicide films such as a molybdenum silicide fiLm or a titanium silicide film
Claims (9)
- CLAIMS: 1. A method for fabricating a semiconductor device comprising the steps of: forming a poly-cide film including a polycrystalline silicon film and a metal silicide film; selectively forming a mask layer on said poly-cide film; and selectively etching said metal silicide film by use of an etchant gas containing C12, 2 and He.
- 2. The method as claimed in claim 1, wherein said etchant gas has such a gas flow rate ratio that C12:O2:He=10:2-4:6-8.
- 3. The method as claimed in claim 1, wherein said etchant gas has a pressure of 0.02 Torr or less.
- 4. The method as claimed in claim 1, wherein a RF power is applied during said step of selectively 2 etching, said RF power has a density of 1.1 W/cm or more
- 5. The method as claimed in claim 1., further comprises the step of etching said polycrystalline silicon by a gas containing HBr and 02.
- 6. The method as claimed in claim 1, further comprising the step of etching said polycrystalline silicon film by a gas containing C12, HBr, 021 and He.
- 7. The method as claimed in claim 1, wherein said mask layer comprises a photoresist film.
- 8. The method as claimed in claim 1, wherein said mask layer comprises a photoresist film and a silicon oxide film.
- 9. The method as claimed in claim 8, further comprising the steps of removing said mask layer after selectively etching said metal silicide film and selectively etching said polycrystalline silicon film after removing said mask layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5353707A JP2907314B2 (en) | 1993-12-30 | 1993-12-30 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9426147D0 GB9426147D0 (en) | 1995-02-22 |
| GB2285336A true GB2285336A (en) | 1995-07-05 |
Family
ID=18432679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9426147A Withdrawn GB2285336A (en) | 1993-12-30 | 1994-12-23 | Polysilicon/silicide etching method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2907314B2 (en) |
| GB (1) | GB2285336A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0814501A3 (en) * | 1996-06-17 | 1998-01-07 | Applied Materials, Inc. | Method for etching metal silicide with high selectivity to polysilicon |
| EP0814500A3 (en) * | 1996-06-17 | 1998-09-09 | Applied Materials, Inc. | Method for etching polycide structures |
| GB2332777A (en) * | 1997-12-24 | 1999-06-30 | Nec Corp | Forming electrodes for semiconductor devices |
| US6242362B1 (en) * | 1999-08-04 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Etch process for fabricating a vertical hard mask/conductive pattern profile to improve T-shaped profile for a silicon oxynitride hard mask |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100274597B1 (en) * | 1997-05-19 | 2001-02-01 | 윤종용 | Etch gas composition of polycrystalline silicon film and tungsten silicide film for semiconductor device manufacturing and plasma etching method using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5160408A (en) * | 1990-04-27 | 1992-11-03 | Micron Technology, Inc. | Method of isotropically dry etching a polysilicon containing runner with pulsed power |
| US5167762A (en) * | 1991-01-02 | 1992-12-01 | Micron Technology, Inc. | Anisotropic etch method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3033128B2 (en) * | 1990-05-25 | 2000-04-17 | ソニー株式会社 | Dry etching method |
-
1993
- 1993-12-30 JP JP5353707A patent/JP2907314B2/en not_active Expired - Lifetime
-
1994
- 1994-12-23 GB GB9426147A patent/GB2285336A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5160408A (en) * | 1990-04-27 | 1992-11-03 | Micron Technology, Inc. | Method of isotropically dry etching a polysilicon containing runner with pulsed power |
| US5167762A (en) * | 1991-01-02 | 1992-12-01 | Micron Technology, Inc. | Anisotropic etch method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0814501A3 (en) * | 1996-06-17 | 1998-01-07 | Applied Materials, Inc. | Method for etching metal silicide with high selectivity to polysilicon |
| EP0814500A3 (en) * | 1996-06-17 | 1998-09-09 | Applied Materials, Inc. | Method for etching polycide structures |
| US5880033A (en) * | 1996-06-17 | 1999-03-09 | Applied Materials, Inc. | Method for etching metal silicide with high selectivity to polysilicon |
| US6008139A (en) * | 1996-06-17 | 1999-12-28 | Applied Materials Inc. | Method of etching polycide structures |
| GB2332777A (en) * | 1997-12-24 | 1999-06-30 | Nec Corp | Forming electrodes for semiconductor devices |
| US6136676A (en) * | 1997-12-24 | 2000-10-24 | Nec Corporation | Semiconductor device manufacturing method |
| GB2332777B (en) * | 1997-12-24 | 2002-07-31 | Nec Corp | Semiconductor device and method of manufacture |
| CN1109357C (en) * | 1997-12-24 | 2003-05-21 | 日本电气株式会社 | Semiconductor device manufacturing method |
| US6242362B1 (en) * | 1999-08-04 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Etch process for fabricating a vertical hard mask/conductive pattern profile to improve T-shaped profile for a silicon oxynitride hard mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2907314B2 (en) | 1999-06-21 |
| GB9426147D0 (en) | 1995-02-22 |
| JPH07201830A (en) | 1995-08-04 |
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