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HK1046776B - 供用於簿柵氧化物的退耦電容器 - Google Patents

供用於簿柵氧化物的退耦電容器 Download PDF

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Publication number
HK1046776B
HK1046776B HK02108392.5A HK02108392A HK1046776B HK 1046776 B HK1046776 B HK 1046776B HK 02108392 A HK02108392 A HK 02108392A HK 1046776 B HK1046776 B HK 1046776B
Authority
HK
Hong Kong
Prior art keywords
source
drain regions
gate poly
voltage
gate
Prior art date
Application number
HK02108392.5A
Other languages
English (en)
Other versions
HK1046776A1 (zh
Inventor
Keshavarzi Ali
K De Vivek
Karnik Tanay
Nair Rajendran
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Publication of HK1046776A1 publication Critical patent/HK1046776A1/zh
Publication of HK1046776B publication Critical patent/HK1046776B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
HK02108392.5A 1999-12-22 2000-11-13 供用於簿柵氧化物的退耦電容器 HK1046776B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/469,406 US6828638B2 (en) 1999-12-22 1999-12-22 Decoupling capacitors for thin gate oxides
US09469406 1999-12-22
PCT/US2000/031352 WO2001046989A2 (en) 1999-12-22 2000-11-13 Decoupling capacitors for thin gate oxides

Publications (2)

Publication Number Publication Date
HK1046776A1 HK1046776A1 (zh) 2003-01-24
HK1046776B true HK1046776B (zh) 2004-12-03

Family

ID=23863664

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02108392.5A HK1046776B (zh) 1999-12-22 2000-11-13 供用於簿柵氧化物的退耦電容器

Country Status (8)

Country Link
US (1) US6828638B2 (zh)
JP (1) JP4954413B2 (zh)
KR (1) KR100532208B1 (zh)
AU (1) AU3072601A (zh)
DE (1) DE10085347B4 (zh)
GB (1) GB2374462B (zh)
HK (1) HK1046776B (zh)
WO (1) WO2001046989A2 (zh)

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US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
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US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
KR100954021B1 (ko) * 2003-08-05 2010-04-20 엡슨 토요콤 가부시키가이샤 압전발진기
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
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US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
WO2006037376A1 (en) * 2004-10-06 2006-04-13 Freescale Semiconductor, Inc A varactor
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
EP1684307A1 (en) 2005-01-19 2006-07-26 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7804126B2 (en) 2005-07-18 2010-09-28 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7358823B2 (en) * 2006-02-14 2008-04-15 International Business Machines Corporation Programmable capacitors and methods of using the same
US7477541B2 (en) * 2006-02-14 2009-01-13 International Business Machines Corporation Memory elements and methods of using the same
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
KR101462886B1 (ko) * 2007-01-01 2014-11-19 샌디스크 테크놀로지스, 인코포레이티드 두 가지 유형의 디커플링 커패시터를 구비한 집적 회로와 방법
KR100907020B1 (ko) * 2008-02-25 2009-07-08 주식회사 하이닉스반도체 반도체 집적회로의 전원 공급 장치 및 이를 이용한 입력임피던스 제어 방법
FR2982707A1 (fr) * 2011-11-10 2013-05-17 St Microelectronics Sa Condensateur a transistor mos sur soi
KR102143520B1 (ko) * 2014-09-17 2020-08-11 삼성전자 주식회사 펌핑 캐패시터
US9837555B2 (en) * 2015-04-15 2017-12-05 Futurewei Technologies, Inc. Apparatus and method for a low loss coupling capacitor
US10510906B2 (en) * 2016-07-01 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. MOS capacitor, semiconductor fabrication method and MOS capacitor circuit
JP7027176B2 (ja) * 2018-01-22 2022-03-01 ラピスセミコンダクタ株式会社 半導体装置
KR20210132026A (ko) * 2020-04-22 2021-11-03 양쯔 메모리 테크놀로지스 씨오., 엘티디. 가변 커패시터

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Also Published As

Publication number Publication date
US6828638B2 (en) 2004-12-07
GB2374462A (en) 2002-10-16
WO2001046989A2 (en) 2001-06-28
KR20020089311A (ko) 2002-11-29
US20020140109A1 (en) 2002-10-03
GB2374462B (en) 2004-05-26
DE10085347T1 (de) 2003-01-30
WO2001046989A3 (en) 2002-05-10
GB0215177D0 (en) 2002-08-07
AU3072601A (en) 2001-07-03
JP2004501501A (ja) 2004-01-15
KR100532208B1 (ko) 2005-11-29
DE10085347B4 (de) 2009-04-09
JP4954413B2 (ja) 2012-06-13
HK1046776A1 (zh) 2003-01-24

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