HK1130939B - Voltage switchable dielectric material having conductive or semi-conductive organic material - Google Patents

Description

Voltage switchable dielectric material with conductive or semiconductive organic material

RELATED APPLICATIONS

This application claims priority from provisional U.S. patent application No.60/820,786 entitled "Voltage switch dielectric Material With Reduced Metal filling," filed on 29.7.2006, which is hereby incorporated by reference in its entirety.

This application also claims priority from provisional U.S. patent application No.60/826,746 entitled "Voltage switchable device and Dielectric Material With High Current Carrying Capacity and process for Electroplating the Same", filed 24/9/2006, which is hereby incorporated by reference in its entirety.

This application also claims priority from provisional U.S. patent application No.60/949,179 entitled "adhesives for voltage switchable Dielectric Materials," filed on 7, 11/2007, which is hereby incorporated by reference in its entirety.

The present application is a continuation-in-part application of U.S. patent application No.11/562,289 entitled "Light Emitting device using Voltage Switchable Dielectric Material" filed on 21.11.2006; this U.S. patent application claims the benefit of provisional U.S. patent application No.60/739,725 entitled "RFID Tag using voltage Switchable Dielectric Material" filed on 22.11.2005 and claims the benefit of provisional U.S. patent application No.60/740,961 entitled "Light Emitting Devices with ESD characteristics" filed on 30.11.2005; all of the foregoing prior applications are hereby incorporated by reference in their respective entireties.

The present application is a continuation-in-part application of U.S. patent application No.11/562,222 entitled "Wireless communication device Using Voltage Switchable Dielectric Material," filed on 21/11/2006; this U.S. patent application claims the benefit of provisional U.S. patent application No.60/739,725 entitled "RFID tag using Voltage Switchable Dielectric Material" filed on 22.11.2005 and claims the benefit of provisional U.S. patent application No.60/740,961 entitled "Light Emitting Devices with ESD characteristics" filed on 30.11.2005; all of the foregoing prior applications are hereby incorporated by reference in their respective entireties.

This application is a continuation-in-part application of U.S. Pat. No.6,797,145 entitled "Current Carrying structural Voltage Switchable Dielectric Material" published on 28.9.2004; this U.S. patent is a partial continuation of the currently-abandoned U.S. application serial No.09/437,882 filed on 10.11.1999, and claims the benefit of U.S. provisional application No.60/151,188 filed on 27.8.1999; all of the foregoing prior applications are hereby incorporated by reference in their entirety.

Technical Field

The disclosed embodiments relate generally to the field of electronic devices, and more particularly, to devices including Voltage Switchable Dielectric (VSD) material.

Background

Voltage Switchable Dielectric (VSD) materials are increasingly used. These applications include, for example, their use on printed circuit boards and device components for handling transient voltages and electrostatic discharge (ESD) events.

Various conventional VSD materials exist. Examples of voltage switchable dielectric materials are provided in references such as U.S. patent No.4,977,357, U.S. patent No.5,068,634, U.S. patent No.5,099,380, U.S. patent No.5,142,263, U.S. patent No.5,189,387, U.S. patent No.5,248,517, U.S. patent No.5,807,509, WO 96/02924, and WO 97/26665. The VSD material may be "SURGX" material produced by SURGX corporation (owned by Littlefuse, inc.).

While VSD material has many uses and applications, conventional compositions of this material have a number of disadvantages. Typical conventional VSD materials are brittle, scratch or otherwise susceptible to surface damage, lack adhesive strength, and have high thermal expansion.

Disclosure of Invention

In one exemplary embodiment, the present invention provides a composition comprising:

an organic material that is conductive or semiconductive, wherein the organic material is solvent soluble or nano-sized dispersed within the composition; and

conductive and/or semiconductive particles other than the organic material;

wherein the organic material and the conductive and/or semiconductive particles combine to provide a composition having: (i) is dielectric when there is no voltage exceeding a characteristic voltage level, and (ii) is conductive when a voltage exceeding the characteristic voltage level is applied; and is

Wherein the organic material comprises single-walled and/or multi-walled carbon nanotubes.

In a preferred embodiment, the composition further comprises a binder, and wherein the organic material and the conductor and/or semiconductor particles are distributed in the binder.

In one exemplary embodiment, the present invention provides a composition comprising:

an adhesive;

an organic material that is conductive or semiconductive, wherein the organic material is soluble in the binder or dispersed as nanoscale particles within the binder; and

conductive and/or semiconductive particles other than the organic material, the conductive and/or semiconductive particles being distributed in the binder;

wherein the organic material and the conductive and/or semiconductive particles combine to provide the composition with the following properties: (i) is dielectric when there is no voltage exceeding a characteristic voltage level, and (ii) is conductive when a voltage exceeding the characteristic voltage level is applied; and is

Wherein the organic material comprises single-walled and/or multi-walled carbon nanotubes.

In a preferred embodiment, in the composition, the conductive organic material and the conductor or semiconductor particles are substantially uniformly distributed throughout the thickness of the binder.

In a preferred embodiment, in the composition, the organic material comprises a C60 or C70 fullerene.

In a preferred embodiment, in the composition, the organic material comprises a monomer, oligomer, or polymer that is conductive or semiconductive.

In a preferred embodiment, in the composition, the organic material comprises an electron donor and/or electron acceptor molecule or polymer.

In a preferred embodiment, in the composition, the organic material comprises a compound selected from thiophene, aniline, phenylene-based compounds, 1, 2-vinylene-based compounds, fluorene, naphthalene, pyrrole, acetylene, carbazole, pyrrolidone, cyano-based materials, anthracene, pentacene, rubrene, or perylene.

In a preferred embodiment, in the composition, the organic material comprises a compound selected from poly (3, 4-ethylenedioxythiophene)/poly (styrenesulfonate), (8-hydroxyquinoline) aluminum (ii), N '-bis (3-methylphenyl) -N, N' -diphenylbenzidine [ TPD ], N '-bis- [ (naphthyl) -N, N' -diphenyl ] -1, 1 '-biphenyl-4, 4' -diamine [ NPD ].

In a preferred embodiment, in the composition, the organic material includes a pure carbon compound corresponding to one of carbon graphite, carbon fiber, or diamond powder.

In a preferred embodiment, in the composition, the conductor and/or semiconductor particles comprise a metal or a metal composite.

In a preferred embodiment, in the composition, the metal complex is selected from the group consisting of oxides, metal nitrides, metal carbides, metal borides, metal sulfides, or combinations thereof.

In a preferred embodiment, in the composition, the conductor and/or semiconductor particles comprise a titanium compound.

In a preferred embodiment, in the composition, the conductive and/or semiconductive particles comprise titanium dioxide.

In a preferred embodiment, in the composition, the titanium compound comprises titanium diboride or titanium nitride.

In a preferred embodiment, the composition further comprises inorganic semiconductor particles distributed in the binder.

In a preferred embodiment, in the composition, the inorganic semiconductor particles comprise particles selected from the group consisting of silicon, silicon carbide, boron nitride, aluminum nitride, nickel oxide, zinc sulfide, bismuth oxide, cerium oxide, iron oxide.

In a preferred embodiment, at least some of the conductive and/or semiconductive particles are surface-bound by the organic material in the composition.

In a preferred embodiment, in the composition, the conductor and/or semiconductor particles comprise one of titanium dioxide, titanium nitride, titanium diboride.

In a preferred embodiment, in the composition, the organic material surface-coated with the conductor and/or semiconductor particles includes organic conductive particles grafted on the surface of each conductive particle in the binder.

In a preferred embodiment, in the composition, the binder material is formed from a material selected from the group consisting of silicone polymers, epoxies, polyimides, polyethylenes, phenolics, polypropylenes, polyphenylene oxides, polysulfones, sol-gel materials, ceramics.

In a preferred embodiment, in the composition, the organic material comprises a chemical moiety covalently bonded to the binder.

In one exemplary embodiment, the present invention provides a voltage switchable dielectric material having a number of carbon nanotubes distributed therein.

In a preferred embodiment, the voltage switchable dielectric material further comprises titanium dioxide distributed in the binder.

In one exemplary embodiment, the present invention provides a composition comprising:

an adhesive comprising at least a portion of the adhesive of the composition, the volume of the adhesive in the composition being from 20% to 80% of the volume of the composition;

conductor particles in the composition in a volume of 10% to 60% of the volume of the composition; and

a conductive or semiconductive organic material, in a volume of 0.01% to 40% in the composition;

wherein the binder, the conductor particles, and the organic material combine to provide a composition having: i) is dielectric when there is no voltage exceeding a characteristic voltage level, and (ii) is conductive when a voltage exceeding the characteristic voltage level is applied;

wherein the organic material comprises single-walled and/or multi-walled carbon nanotubes.

In a preferred embodiment, the organic material is solvent soluble in the binder in the composition.

In a preferred embodiment, in the composition, the organic material is distributed as nanoscale particles in the binder.

In one exemplary embodiment, the present invention provides a method of producing a voltage switchable dielectric material, the method comprising:

producing a mixture comprising (i) a dielectric binder, (ii) metallic and/or inorganic conductor or semiconductor particles, and (iii) conductive or semiconductive organic material distributed in the mixture as solvent-soluble particles or as nanoscale particles, wherein producing the mixture comprises using each of the binder, the metallic and/or inorganic conductor or semiconductor particles, and the organic material such that, when cured, the mixture is (i) dielectric in the absence of a voltage exceeding a characteristic voltage, and (ii) conductive in the presence of a voltage exceeding a characteristic voltage;

curing the mixture; and

wherein the organic material comprises single-walled and/or multi-walled carbon nanotubes.

In a preferred embodiment, the method further comprises applying the mixture to a target location on a device, and wherein curing the mixture comprises curing the mixture at the target location.

In a preferred embodiment, in the method, producing a mixture comprises producing the mixture using fullerene as the organic material.

In a preferred embodiment, in the method, the fullerene is functionalized C60 or C70.

In a preferred embodiment, in the method, the fullerene is a carbon nanotube.

In a preferred embodiment, in the method, the metallic and/or inorganic conductor or semiconductor particles are selected from the group consisting of copper, aluminum, nickel and steel, silicon carbide, boron nitride, aluminum nitride, nickel oxide, zinc sulfide, bismuth oxide, cerium oxide and iron oxide.

In a preferred embodiment, in the method, the metallic and/or inorganic conductor or semiconductor particles comprise a titanium compound.

In a preferred embodiment, in the method, the metallic and/or inorganic conductor or semiconductor particles comprise titanium dioxide.

In one exemplary embodiment, the present invention provides a voltage switchable dielectric material formed by the process of:

producing a mixture comprising (i) a dielectric binder, (ii) metallic and/or inorganic conductor or semiconductor particles, and (iii) conductive or semiconductive organic material distributed in the mixture as solvent-soluble particles or as nanoscale particles, wherein producing the mixture comprises using each of the binder, the metallic and/or inorganic conductor or semiconductor particles, and the organic material such that, when cured, the mixture is (i) dielectric in the absence of a voltage exceeding a characteristic voltage, and (ii) conductive in the presence of a voltage exceeding a characteristic voltage;

curing the mixture; and

wherein the organic material comprises single-walled and/or multi-walled carbon nanotubes.

In one exemplary embodiment, the present invention provides an electronic device comprising the composition of the present invention.

In a preferred embodiment, the device is selected from the group consisting of a discrete device, a semiconductor component, a display device or backplane, a light emitting diode, and a radio frequency identification device.

Drawings

Figure 1 is a block diagram illustrating the ingredients used in formulating VSD material according to one embodiment of the present invention.

Figure 2 illustrates a process for formulating a VSD material composition with organic material according to an embodiment of the present invention.

Figure 3A is a cross-sectional view of VSD material, where the VSD material is formulated in accordance with one or more embodiments of the present invention.

Figure 3B illustrates a basic electrical characteristic diagram of the clamping voltage and trigger voltage of VSD material according to the embodiment illustrated in figure 3A or elsewhere.

Figures 3C-3E illustrate graphs of voltage versus current performance of different examples of VSD material according to one or more embodiments of the present invention in response to the occurrence of a voltage event.

Figure 4 illustrates another process by which VSD material may include organic material overlying conductors or semiconductors, according to an embodiment of the present invention.

Fig. 5A and 5B show how covering a metal/inorganic conductor or semiconductor surface with an organic material can reduce the filling of such particles under an embodiment of the present invention.

Figure 5C illustrates a relatively disordered distribution of organic fillers reflecting the effect of organic fillers distributed on a nanometer scale within the binder of VSD material, according to one embodiment of the present invention.

Fig. 6A and 6B each illustrate different configurations of a substrate device that is constructed using VSD material having an organic component ("organic VSD") according to an embodiment of the present invention.

Figure 7 illustrates a process for electroplating using organic VSD material according to any of the embodiments described in figures 1-5C.

FIG. 8 is a simplified diagram of an electronic device on which VSD material of embodiments described herein can be disposed.

Detailed Description

Embodiments described herein provide devices that include compositions of VSD material that include organic conductive or semiconductive materials. As described in this specification, the use of organic conductive or semiconductive materials can configure VSD materials with a number of improved or desirable characteristics that cannot be provided by more traditional VSD configurations.

Thus, one or more embodiments provide devices that include, integrate, or otherwise provide configurations of VSD material having benefits, including, for example, one or more of: (i) improved mechanical properties including inherent high compressive strength, scratch resistance and non-brittle properties; (ii) have improved thermal performance; (iii) has high adhesive strength; (iv) has good copper adhesion capability; or (v) have lower thermal expansion than more conventional VSD materials.

For configurations of VSDs located on such devices, one or more embodiments provide compositions that include (i) an organic material that is conductive or semiconductive, and (ii) conductor or semiconductor particles other than the organic material. The conductive/semiconductive organic material can be solvent soluble or dispersed on a nanometer scale within the composition of the VSD material. The organic material and the conductive and/or semiconductive particles combine to provide a composition having the electrical characteristics of VSD material, including (i) being dielectric when no voltage exceeding a characteristic voltage level is present, and (ii) being conductive when a voltage exceeding a characteristic voltage level is applied.

According to embodiments described in this specification, organic conductive/semiconductive materials can be homogeneously mixed into the binder of the VSD mixture. In one embodiment, the mixture is dispersed on a nanometer scale, meaning that the particles comprising the organic conductive/semiconductive material are nanometer-sized in at least one dimension (e.g., cross-section), and a large number of particles (including the entire distribution in the volume) are individually separated (so as not to coagulate or squeeze together).

Still further, one or more embodiments include VSD material with carbon nanotubes. In one embodiment, the binder of the VSD material includes carbon nanotubes that are substantially homogeneously mixed so as to be distributed on a nanometer scale.

In another embodiment, a method for producing a voltage switchable dielectric material is provided. A mixture is produced comprising (i) a dielectric binder, (ii) metallic and/or inorganic conductor/semiconductor particles, and (iii) a conductive or semiconductive organic material. In producing the mixture, binders, metallic and/or inorganic conductor/semiconductor particles, and organic materials are each used. When cured, the mixture is (i) dielectric, when no voltage above the characteristic voltage level is present, and (ii) conductive, when a voltage above the characteristic voltage is present. The mixture may then be cured to form VSD material.

In the described embodiments, the characteristic voltage may vary over a range of values that exceed the operating voltage level of the circuit or device by a multiple. Although embodiments may include the use of planned electrical events, this voltage level may be on the order of transient conditions such as those produced by electrostatic discharge and the like. Moreover, one or more embodiments contemplate that the material behaves similarly to an adhesive in the absence of a voltage exceeding a characteristic voltage.

Still further, an embodiment provides VSD material formed by the process or method.

Still further, the electronic device may be provided with VSD material according to any of the embodiments described in this specification. The electronic device may include substrate devices such as printed circuit boards, semiconductor packages, discrete devices, Light Emitting Diodes (LEDs), and Radio Frequency (RF) components.

In one embodiment, the organic material is a fullerene. According to one embodiment, the organic material is single-walled or multi-walled carbon nanotubes.

As used in this specification, a "voltage switchable material" or "VSD material" is any composition or combination of compositions that has dielectric or insulating properties, unless a voltage is applied to the material that exceeds a characteristic voltage level of the material, in which case the material becomes conductive. VSD material is therefore dielectric unless a voltage exceeding a characteristic level (e.g., provided by an ESD event) is applied to the material, in which case the VSD material is conductive. VSD material can be further characterized as any material characterized as having a non-linear resistive material.

VSD material can also be characterized as: is non-layered and uniform in its composition while exhibiting the electrical characteristics described.

Still further, one embodiment demonstrates that VSD material can be characterized as material that includes a binder partially mixed with conductive or semiconductive particles. The material as a whole conforms to the dielectric properties of the adhesive in the absence of a voltage exceeding the characteristic voltage level. The material as a whole has conductive properties when a voltage exceeding a characteristic voltage level is applied.

Typically, the characteristic voltage of VSD material is measured in volts per length (e.g., every 5 mils). One or more embodiments contemplate that the VSD material has a characteristic voltage level that exceeds the voltage level of the operating circuit.

Figure 1 is a block diagram illustrating the ingredients used in formulating VSD material according to one embodiment of the present invention. According to one embodiment, conductive or semiconductive organic material ("organic material") 110 is combined with conductive and/or semiconductive particles 120 to form VSD material 140. As an optional additive, insulator particles may also be combined with the conductor/semiconductor particles 120. In one embodiment, the organic material 110 is combined with inorganic conductor/semiconductor particles 120. The binder material 130 can combine with the organic material 110 and the conductive particles to form VSD material 140. The VSD formulation process 150 can be used to combine various components of the VSD material 140. The formulation process for incorporating VSD material with organic material is described below, for example, with the embodiment of figure 2.

In one embodiment, the binder 130 is a binder that holds the conductive/semiconductive organic material 110 and the conductor/semiconductor particles 120. In one embodiment, the organic material 110 is dispersed as nanoscale particles. As dispersed nanoscale particles, the organic material 110 includes particles that are nanoscale and are individually separated from each other, rather than attached or agglomerated. The formulation process 150 can uniformly disperse the particles in the binder of the binder 130.

In the embodiment of fig. 1, the organic material is dispersed fullerenes. Examples of fullerenes suitable for use in one or more embodiments described in this specification include C60 or C70 fullerene 112, sometimes referred to as Buckyball (Buckyball). The fullerene may be functionalized to provide covalent chemical groups or moieties. In another embodiment, carbon nanotubes 114, which are cylindrical fullerenes, may be used. The carbon nanotubes 114 may be single-walled or multi-walled. Still further, one or more embodiments contemplate fullerenes formed from a combination of different types of fullerenes, including carbon nanotubes.

Alternatively or in variant, another embodiment provides the conductive or semiconductive organic material in the form of pure carbon compounds (instead of those described in fig. 1). For example, the conductive or semiconductive organic material may correspond to one of carbon graphite, carbon fiber, or diamond powder.

According to one or more embodiments, other components or ingredients used in the formulation process 150 include solvents and catalysts. A solvent may be added to the binder of the binder 130 to separate the particles. A mixing process may be used to uniformly separate the separated particles. In one embodiment, as a result of the mixing process, the composition is uniformly mixed, dispersing the particles on a nanometer scale. Thus, particles such as carbon nanotubes and the like may each be completely separated and relatively uniformly distributed in the material. To achieve nanoscale dispersion, one or more embodiments contemplate the use of sonic stirrers and precision mixing equipment (e.g., rotor-stator mixers, ball mills, attritors, and other high shear mixing techniques) for periods lasting several hours or more. Once mixed, the resulting mixture may be cured or dried.

Instead of, or in addition to, using nano-sized distributed particles, one or more embodiments design the conductive or semiconductive organic material 110 to be solvent soluble. In one embodiment, the conductive/semiconductive organic material 110 is added to the binder and mixed with a solvent. During the drying process, the solvent is removed, leaving the conductive/semiconductive organic material 110 remaining homogeneously mixed within the cured material. An example of a solvent soluble material is poly-3-hexylthiophene (poly-3-hexylthiophene). The solvent may correspond to toluene. As a result of the curing step of the formulation process 150, poly-3-hexylthiophene remains in the VSD material 140.

Thus, many other types of conductive/semiconductive organic materials are designed for VSD material according to embodiments of the present invention, instead of or in addition to fullerenes. These include: poly-3-hexylthiophene (as described above), Polythiophene (Polythiophene), polyacetylene (polyacetylene), poly (3, 4-ethylenedioxythiophene)/poly (styrenesulfonate), Pentacene (pentalene), (8-hydroxyquinoline) aluminum (III), N '-di- [ (naphthyl) -N, N' -diphenyl ] -1, 1 '-biphenyl-4, 4' -diamine [ NPD ], conductive carbon graphite or carbon fibers, diamond powder, and conductive polymers.

Thus, as an alternative or variation to the described embodiments, the organic material may correspond to a solvent-soluble compound.

According to another embodiment, other types of conducting/semiconducting organic materials may be used. These include conductive/semiconductive monomers, oligomers, and polymers. Depending on the classification, the conductive or semiconductive organic material may correspond to various monomers, oligomers and polymers of thiophene (such as poly-3-hexylthiophene or polythiophene), aniline, phenylene (phenylenes), 1, 2-vinylene (vinylenes), fluorene (fluorenes), naphthalene, pyrrole, acetylene, carbazole, pyrrolidone, cyano material, anthracene (anthracene), pentacene, rubrene, perylene, or oxadiazoles (oxadizoles). Still further, the conductive or semiconductive organic material may correspond to poly (3, 4-ethylenedioxythiophene)/poly (styrenesulfonate), (8-hydroxyquinoline) aluminum (III), N '-bis (3-methylphenyl) -N, N' -diphenylbenzidine [ TPD ], N '-di- [ (naphthyl) -N, N' -diphenyl ] -1, 1 '-biphenyl-4, 4' -diamine [ NPD ].

The conductor/semiconductor particles 120 may correspond to a conductor or a semiconductor. One or more embodiments contemplate the use of inorganic semiconductor particles comprising silicon, silicon carbide, or titanium dioxide, boron nitride, aluminum nitride, nickel oxide, zinc sulfide, bismuth oxide, cerium oxide, iron oxide, a metal and/or a composite selected from an oxide, a metal nitride, a metal carbide, a metal boride, a metal sulfide, or combinations thereof.

The adhesive 130 may also be of various types. The binder 130 may be provided as a binder that holds the conductive/semiconductive organic material 110 and the conductive/semiconductive particles 120. According to various embodiments, the adhesive 130 is formed from a material selected from the group consisting of silicone polymers, epoxies, polyimides, polyethylenes, polypropylenes, polyphenylene oxides, polysulfones, sol-gel materials (solgel materials), and ceramics. In accordance with one or more embodiments, the binder 130 is a binder that suspends and/or holds the organic material 110 and the conductor/semiconductor particles 120, as well as other particles or compounds that include the VSD material 140. In addition, the adhesive 130 may include solvents and other ingredients not specifically described herein.

VSD formulation with organic material

Generally, embodiments contemplate the use of VSD material that includes, in volume percent, 5-99% binder, 0-70% conductor, 0-90% semiconductor, and 0.01-95% organic conductive or semiconductive material. One or more embodiments contemplate the use of VSD material that includes, in volume percent, 20-80% binder, 10-50% conductor, 0-70% semiconductor, and 0.01-40% conductive or semiconductive organic material by volume of the composition. Still further, one embodiment contemplates the use of VSD material that includes, in volume percent, 30-70% binder, 15-45% conductor, 0-50% semiconductor, and 0.01-40% conductive or semiconductive organic material by volume of the composition. Examples of binders include silicone polymers, epoxy resins, polyimides, phenolic resins, polyethylene, polypropylene, polyphenylene oxides, polysulfones, sol-gel materials, ceramics, and inorganic polymers. Examples of conductors include metals such as copper, aluminum, titanium, nickel, stainless steel, chromium, and other alloys. Examples of semiconductors include organic and inorganic semiconductors. Some inorganic semiconductors include silicon, silicon carbide, boron nitride, aluminum nitride, nickel oxide, zinc sulfide, bismuth oxide, and iron oxide. Examples of organic semiconductors include poly-3-hexylthiophene, pentacene, perylene (or derivatives thereof), carbon nanotubes, C60 fullerene, and diamond. The particular formulation and composition may be selected for the mechanical and electrical properties that are most suitable for the particular application of the VSD material.

Figure 2 illustrates a process for formulating a composition of VSD material with organic material according to an embodiment of the present invention. Initially, at step 210, a resin mixture having conductive and semiconductive organic particles (or alternatively solvent solubles) is produced. When formulated, the resin mixture can be used as a binder for VSD material. In one embodiment, the organic material may correspond to carbon nanotubes. The amount of organic material added to the mixture can vary depending on the desired weight or volume percentage of organic material in the VSD material being formulated. In one embodiment using carbon nanotubes, the amount of carbon nanotubes added to the resin is such that the carbon nanotubes comprise less than 10% by weight of the total composition, and more specifically, from 0.01 to 10% of the total composition of the VSD material formulated therewith. More generally, the amount of organic material added to the resin may be based on the following: an amount of organic material is used that is less than the percolation threshold (percolation threshold) of the mixture as a weight percentage of the VSD material formulated.

At step 220, metal and/or inorganic conductor/semiconductor is added to the mixture. As described in the embodiment of fig. 1, many types of conductors or semiconductors may be used. More than one type of organic/semiconductor particles may be added. In one embodiment, titanium dioxide (TiO2) is used as the primary conductive/semiconductive particle type (or one of them), as well as other conductor particles. Other curing agents and catalyst ingredients and insulating particles may also be added to the mixture.

At step 230, a mixing process may be performed within a specified period. In one embodiment, the mixing process is performed over a period of minutes or hours using a mixing device comprising a sonic agitator.

At step 240, the mixture is applied to its desired target. For example, the mixture may be applied to a 5 mil gap between two given electrodes of a particular device. At the target site, the mixture is solidified into VSD material.

As illustrated in the embodiment of fig. 1, the resulting VSD material has many improved mechanical properties over more conventional VSD materials. For example, VSD material formulated according to the described embodiments may be less brittle, have better compressive strength, adhere better to metals (especially copper), and/or have better aesthetic properties, among other possible improvements.

Examples of formulations and compositions

Mixtures according to embodiments described herein may be formulated as follows: organic materials such as Carbon Nanotubes (CNTs) are added to a suitable resin mixture. In one embodiment, the resin mixture includes Epon 828 and a silane coupling agent. NMP (N-methyl-2 pyrrolidone) may be added to the resin mixture. Subsequently, conductor or semiconductor particles may be added to the mixture. In one embodiment, titanium dioxide is mixed into the resin along with titanium nitride, titanium diboride, a curing compound or curing agent, and a catalyst. The mixture can be homogeneously mixed by sonication (sonication), for example using a rotor-stator mixer, over a mixing period lasting several hours, for example 8 hours. For this mixing process, the addition of NMP is necessary. The resulting mixture can be applied as a coating to the desired target using a #50 wire wound rod (wire wound rod) or screen printing. In one embodiment, the coating may be applied to a 5 mil gap between the two electrodes. Subsequently, a curing process may occur, which may be altered. One suitable curing process includes curing at 75 ℃ for 10 minutes, 125 ℃ for 10 minutes, 175 ℃ for 45 minutes, and 187 ℃ for 30 minutes.

The specific formulation may vary depending on the design criteria and application. One example of a formulation in which carbon nanotubes are used for the organic material 110 includes:

epoxy resin type weight (g)

CheapTubes 5.4

Epon 828 100

Gelest aminopropyl triethoxysilane 4

(Aminopropyltriethoxysilane)

Total epoxy resin 104

Nanophase bismuth oxide 98

HC Starck titanium nitride 164

Degussa Dyhard T03 4.575

NMP 25.925

Solidification solution 30.5

1-methylimidazole 0.6

HC Stark titanium diboride 149

Millenium Chemical doped titanium dioxide 190

NMP 250

Total solution 986.1

Total solids 715.575

Epoxy resin: amin equivalent ratio to solid% 72.6%

The curing solution was 15 wt% Dyhard T03 in NMP.

Carbon nanotubes have the advantage of high aspect-ratio organic fillers. The length or aspect ratio may be varied to achieve a desired characteristic, such as the switching voltage of the material.

Figure 3A is a cross-sectional view of VSD material disposed on device 302, where the VSD material is formulated in accordance with one or more embodiments of the present invention. In one embodiment, the thickness or layer or VSD material 300 includes the essential components: metal particles 310, binder material 315, and carbon nanotubes 320. Other organic materials, such as C60 or C70 fullerenes (which may or may not be functionalized), may be used instead of or in addition to the carbon nanotubes 320. In addition, the use of organic conductors and semiconductors provides the ability to use electron donor or electron acceptor molecules.

However, embodiments recognize that carbon nanotubes have a substantial aspect ratio. This dimensional characteristic enables the carbon nanotubes to enhance the ability of the binder to transfer electrons from the conductive particles to the conductive particles at transient voltages exceeding the characteristic voltage. In this way, the carbon nanotubes can reduce the metal filler present in the VSD material. By reducing the metal filler, the physical characteristics of the layer can be improved. For example, as described in connection with one or more other embodiments, the reduction of metal filler reduces the fragility of the VSD material 300.

Furthermore, while the embodiment of fig. 3A shows the organic material present in the layer of VSD material in particulate form, one or more embodiments contemplate the use of an organic solvent that is soluble within the binder 315.

As illustrated in the embodiment of fig. 2, VSD material 300 may be formed on device 302 by being deposited as a mixture on a target location of device 302. The target location may correspond to the extension 312 between the first and second electrodes 322, 324. According to one or more embodiments, for applications such as printed circuit boards, the extension 312 is about (i.e., within 60%) 3.0 mils, 5.0 mils, or 7.5 mils. However, the exact distance of the extensions 312 may vary depending on design specifications (e.g., for printed circuit board applications, the gap distance may vary between 2-10 mils). Also, some applications, such as semiconductor components, for example, may use smaller gap distances. Applying VSD material in the gap enables the processing of currents generated by transient voltages that exceed the characteristic voltage of the VSD material.

Device 302 may correspond to any of a number of types of electronic devices. In an embodiment, device 302 is implemented as part of a printed circuit board. For example, the VSD material 300 can be provided having a thickness that is located on the surface of the plate or within the thickness of the plate. The device 302 may further be provided as part of a semiconductor assembly or as a discrete device.

Alternatively, the device 302 may be applied to a light emitting diode, a radio frequency tag or device, or a semiconductor component, for example.

As described in other embodiments, VSD material, when applied to a target location of a device, can be characterized by electrical characteristics such as characteristic (or trigger) voltage, clamp voltage, leakage current, and current carrying capability. The embodiments described herein contemplate the use of conductive or semiconductive organic materials in the mixture, the use of conductive or semiconductive organic materials enabling the adjustment of the electrical properties described while maintaining several desirable mechanical properties described elsewhere in the application.

Figure 3B shows a graph of the basic electrical characteristics of the clamping voltage and the trigger voltage of VSD material according to the embodiment described in figure 3A and elsewhere in this application. Generally, the characteristic voltage level or trigger voltage is the voltage level at which the VSD material turns on or becomes conductive (which may vary per unit length). The clamp voltage is typically less than or equal to the trigger voltage and is the voltage required to maintain the VSD material in an on state. In some cases where VSD material is disposed between two or more electrodes, the trigger voltage and the clamp voltage may be measured as outputs on the VSD material itself. Thus, the VSD material can be maintained in the on state for a period of time less than the breakdown threshold energy or time by maintaining the input voltage level above the clamp voltage. In an application, the trigger voltage and/or the clamping voltage may be varied in dependence on an input signal that is tooth-shaped, pulsed, shaped, or even modulated over several pulses.

Embodiments further recognize that another meaningful electrical characteristic includes an off-state impedance that is determined by measuring current through an operating voltage of the device. The resistivity of the off-state corresponds to the leakage current. The change in resistivity in the off state in the comparison before and after the VSD material is turned on indicates a degradation in the performance of the VSD material. In most cases, this should be minimized.

Still further, another electrical property may correspond to current carrying capacity, measured as the ability of a material to self-sustain after being turned on and then off.

Tables 1 and 2 illustrate several examples of VSD material, including VSD material containing carbon nanotubes according to one or more embodiments described herein. Tables 1 and 2 both list electrical characteristics measured under general conditions (meaning that there is no difference between the form of the input signal and/or the manner in which the data determining the performance of the electrical characteristics is taken), as quantified by, for example, the clamp and trigger voltages that result from the use of VSD material according to the composition.

TABLE 1

TABLE 2

With respect to table 1, example 1 provides a composition of VSD material, which is the basis for comparison with other examples. In example 1, no conductive or non-conductive organic material was used in the VSD material. Furthermore, VSD material has a high metal fill. Example 2 illustrates a similar composition to example 1, but incorporating carbon nanotubes. The result is a reduction in the trigger voltage and clamp voltage. The trigger and clamping voltages can be reduced by adding carbon nanotubes for a given (fixed) nickel fill condition.

Example 3 also shows VSD compositions lacking organic conductive/semiconductive materials, while example 4 shows the effect of including carbon nanotubes into the mixture. As shown in the table, a sharp decrease in trigger and clamp voltages is shown. With respect to examples 3 and 4, both compositions show compositions with reasonable mechanical properties as well as off-state resistivity and current carrying capacity characteristics (neither of which are mentioned in the graph). However, the clamp and trigger voltage values of example 3 illustrate that compositions that do not contain carbon nanotubes are difficult to turn on and maintain in an on state. Abnormally high trigger and clamp voltages therefore reduce the usefulness of the composition.

Examples 5 and 6 show the use of organic semiconductors with carbon nanotubes. In example 5, the organic semiconductor is an imidazole dinitrile. In example 6, the organic semiconductor is methylaminoanthracene.

Examples 7-10 show various combinations of VSD material. Example 8 shows the use of an organic semiconductor (hexathiophene) and carbon nanotubes. Example 10 illustrates VSD compositions with various types of carbon nanotubes having different VSD compositions, showing various effects resulting from the use of conductive or semiconductive organic materials, according to embodiments of the present invention.

The performance graphs shown in fig. 3C-3E assume a pulsed voltage input. The performance graphs may be used for reference to the examples in the table below.

TABLE 3

Figure 3C is a graph that illustrates a performance graph of VSD material having a greater amount of carbon nanotube concentration in the binder of the VSD material, as described in example 11. As shown by the graph of FIG. 3C, the occurrence of an initial voltage event 372 in the range of 500-1000 volts causes the material to turn on in order to carry current. A second voltage event 374 applied after the device turns off following the first event results in a similar effect as the initial event 372, with the material carrying current at a relatively same voltage level. A third voltage event 376 occurring after the device is turned off a second time results in the current level carried in the VSD material being similar to the first two instances. Likewise, fig. 3C shows that the VSD material of the composition in example 11 has a relatively high current carrying capacity because the VSD material remains effective after two instances of turn-on and turn-off.

Figure 3D is related to example 12, which example 12 is a VSD composition that does not include conductive or semiconductive organic material. While VSD material is effective in a first voltage event 382, there is no detectable non-linear behavior (i.e., turn-on voltage) when a subsequent second voltage event 384 occurs.

Fig. 3E is related to example 13, which example 13 has a lower amount of carbon nanotubes. This small addition of conductive/semiconductive organic material improves the current carrying capability of the VSD material as shown by the amperage of the first voltage event 392 and the lesser (but present) amperage of the second voltage event 394.

Coated conductor or semiconductor particles

One or more embodiments include the formulation of VSD materials that include the use of conductive or semi-conductive micro-fillers that are coated or otherwise bonded around the perimeter of the metal particles. This formulation allows for further reduction in the size of the metal particles and/or reduction in the volume otherwise occupied by the metal particles. Such reduction may improve the overall physical properties of the VSD material in the manner described in other embodiments.

As described below, one or more embodiments contemplate the use of conductive organic materials as the micro-filler, which coats or otherwise incorporates metal or other inorganic conductor components. One purpose of coating the inorganic/metallic particles with organic particles is to substantially maintain the overall effective volume of conductive material in the binder of the VSD material while reducing the volume of metallic particles to be used.

Figure 4 illustrates a more detailed process by which VSD material according to embodiments of the present invention can be formulated. According to step 410, a conductive (or semi-conductive) component to be loaded into an adhesive for VSD formulation is first prepared. This step may include combining organic materials (e.g., carbon nanotubes) with the particles to be coated to produce the desired effect when curing the final mixture.

In one embodiment, separate preparation steps are performed for the metal and metal oxide particles. In one embodiment, step 410 may include the substeps of filtering the aluminum and alumina powders. Each set of powders is then coated with an organic conductor to form a conductive/semiconductive composition. In one embodiment, the following process may be used for aluminum: (i) adding 1-2 millimoles of silane per gram of aluminum (dispersed in an organic solvent); (2) using a sonic energy application device (sonic applicator) to disperse the particles; (iii) reacting for 24 hours under stirring; (iv) weighing Cab-O-Sil or an organic conductor and adding the Cab-O-Sil or the organic conductor into the solution; (v) adding a suitable solvent to the Cab-O-Sil and/or organic conductor mixture; (vi) adding Cab-O-Sil and/or an organic conductor to the assembly with aluminum (collection); and (vii) drying at 30-50 ℃ overnight.

Similarly, the following procedure can be used for alumina: (i) adding 1-2 millimoles of silane per gram of alumina (dispersed in an organic solvent); (2) applying a device using sonic energy to disperse the particles; (iii) reacting for 24 hours under stirring; (iv) weighing Cab-O-Sil or an organic conductor and adding the Cab-O-Sil or the organic conductor into the solution; (v) adding Cab-O-Sil and/or an organic conductor to the aggregate with alumina; and (vi) drying overnight at 30-50 ℃.

According to one embodiment, carbon nanotubes may be used to coat or otherwise prepare the conductive component. The carbon nanotubes can be offset to stand up when combined with the metal particles, thereby extending the conductive length of the particles while reducing the total volume of metal required. This can be accomplished by placing a chemical reactant around the surface of the metal particles that will form the conductors within the VSD material. In one embodiment, the metal particles may be treated with a chemical that reacts with another chemical located at the longitudinal ends of the carbon nanotubes. For example, the metal particles may be treated with a silane coupling agent. The carbon nanotube ends may be treated with a reactant so that the carbon nanotube ends are bonded to the surface of the metal particles.

At step 420, a mixture is prepared. The binder material may be dissolved in a suitable solvent. The desired viscosity can be achieved by adding more or less solvent. A conductive component (or semiconductive component from step 410) is added to the binder material. The solution may be mixed to form a uniform distribution. An appropriate curing agent may then be added.

At step 430, the solution from step 420 is concentrated or provided onto the target application (i.e., substrate, or discrete element or light emitting diode or organic LED) and then heated or cured to form the solid VSD material. Prior to heating, the VSD material may be shaped or coated for a particular application of the VSD material. There are various applications for VSD materials with organic material coated metal or inorganic conductors/semiconductors.

Fig. 5A and 5B show how coating or bonding the surface of a metal/inorganic conductor or semiconductor with an organic material can reduce the filling of such particles under an embodiment of the present invention. Figure 5A is a diagram showing how carbon nanotubes can be surface coated with conductor and/or semiconductor particles in a binder of VSD material. As shown, the conductive component 500 includes metal particles 510 and metal oxide or any other inorganic semiconductor particles 520. The metal particles 510 may have a size represented by a diameter d1, while the metal oxide particles 520 may have a size represented by d 2. In the embodiment illustrated by fig. 5A, conductive organic fillers 530 (e.g., carbon nanotubes) are bonded or bound to the perimeter of each particle 510, 520. Because the joined organic filler 530 is conductive or semiconductive, the effect is to increase the size of the particles 510 and 520 without increasing the volume of those particles in the binder of the VSD material. The presence of the organic filler makes it possible to achieve molecule-to-molecule conduction, electron transition or tunneling when a voltage exceeding the characteristic voltage level occurs. In fact, conductive element 500 may be semiconductive because conductive element 500 may have the property of being collectively conductive when a characteristic voltage level is exceeded.

In fig. 5B, conventional VSD material is shown without the addition of organic material. The metal particles are relatively closely spaced to transfer charge when a voltage is applied that exceeds a characteristic voltage level. As the conductors are more closely spaced, more metal filler is required to enable the device to switch to the conductive state. In contrast to the embodiment shown by fig. 5A, in the conventional method shown by fig. 5B, the particles 510, 520 are separated by a glass particle space (e.g., Cab-O-Sil), such as the embodiment shown in fig. 5A, in which the metal volume is replaced with a conductive filler 530, the conductive filler 530 being conductive, having reasonable physical properties, and having dimensions sufficient to replace metal.

Fig. 5C shows a relatively disordered distribution of the organic filler (e.g., carbon nanotubes), reflecting how the organic filler inherently produces results similar to those obtained from the diagram of fig. 5A when uniformly dispersed on a nanometer scale. Fig. 5C is not to scale and the depiction of fig. 5 may reflect the embodiment shown or described in fig. 3 or elsewhere in this specification. As shown, a plurality of uniformly distributed conductive/semiconductive fillers 530 achieve sufficient contact and/or achieve an approximation that a conductive path for processing current is achieved, including by electron tunneling and transition. This results in improved electrical and physical properties, particularly those associated with reducing metal filler in the binder of the VSD material. Also, when the particles are uniformly dispersed in the binder on a nanometer scale, less organic material 530 is required to produce the desired electrical conduction effect.

VSD material applications

There are many applications for VSD material according to any of the embodiments described herein. In particular, embodiments contemplate the provision of VSD material on substrate devices, such as printed circuit boards, semiconductor packages, discrete devices, and more specialized applications, such as LEDs and radio frequency devices (RFID tags). Still further, in other applications, the VSD materials described herein may be designed for use in liquid crystal displays, organic light emitting displays, electrochromic displays, electrophoretic displays, or backplane drivers for such devices. The purpose of including VSD material may be to improve handling of transient and overvoltage conditions that may occur with ESD events, for example. Another application of VSDM includes metal deposition, as described in U.S. patent No.6,797,145 to l.kosowsky, which is incorporated herein by reference in its entirety.

Fig. 6A and 6B each illustrate different configurations of a substrate device that is constructed using VSD material having an organic component ("organic VSD") according to embodiments of the present invention. In fig. 6A, for example, the substrate device 600 may correspond to a printed circuit board. In this configuration, an organic VSD 610 can be disposed on the surface 602 to ground the connected elements. Alternatively or in variation, figure 6B shows a configuration in which the organic VSD forms a ground path in a thickness layer 610 of the substrate.

Electroplating of

In addition to including VSD material on devices, e.g., for handling ESD events, one or more embodiments contemplate using VSD material to form substrate devices, including trace elements (trace elements) on the substrate as well as interconnect elements such as vias and the like. U.S. patent No.6,797,145 (incorporated herein in its entirety) details many techniques for plating substrates, vias, and other devices using VSD material. The embodiments described herein enable organic VSD material to be used as described in any of the embodiments herein.

Figure 7 illustrates a process for electroplating using the organic VSD material according to any of the embodiments described in figures 1-5. The improved physical and electrical properties provided by the embodiments described herein facilitate an electroplating process as described in U.S. Pat. No.6,797,145. Figure 7 depicts a simplified plating process (as described in U.S. patent No.6,797,145) in which VSD material is used in accordance with any of the embodiments described in figures 1-5.

In fig. 7, a basic electroplating technique according to one or more embodiments of the present invention is depicted. In step 710, a target area of a device (e.g., substrate) is patterned using organic VSD material. The patterning can be performed, for example, by applying a continuous VSD layer on the substrate and then placing a mask on the VSD layer. The mask may define a negative of the desired electrical/trace pattern. Alternative embodiments are also possible. For example, the VSD material may be applied to the entire area and then selectively removed to expose areas where no current carrying elements are intended. Still further, the VSD material can be pre-patterned on the target area.

Step 720 provides for immersing the substrate in an electrolytic solution.

Step 730 provides for applying a voltage that exceeds the characteristic voltage level to the patterned region of the device. The application of the voltage may be pulsed to last for a specified period of time that is less than the breakdown time. The breakdown time may correspond to a minimum time period, which is a minimum duration of time for which breakdown of the organic VSD material is found when a given voltage is applied. In a breakdown state, the organic VSD material may lose its electrical properties, including its switching properties. The pattern of current carrying traces and elements can substantially match the pattern of the organic VSD material. In the electrolytic solution, the charged elements attract and bond to the exposed regions of the organic VSD material, forming current carrying traces and elements on the device.

In particular, one or more embodiments for electroplating on a device include the use of organic VSD material that reduces metal filling by using organic materials such as carbon nanotubes in the filler material. This configuration allows for longer pulses for performing the electroplating steps 720 and 730 than conventional VSD materials. Moreover, the use of organic VSD material increases the likelihood that the VSD material will retain its integrity after the plating process. This means that the trace elements may be provided with inherent grounding capabilities that may be integrated into the device.

Consistent with the embodiment of FIG. 7, the use of VSD material according to the embodiments described herein may be applied to any of the electroplating techniques described in U.S. Pat. No.6,797,145. With the described techniques of electroplating with organic VSD material, it is possible to (i) create vias in substrate devices, (ii) create multi-faceted substrate devices with current-carrying patterns on each facet, and/or (iii) create interconnect vias between multi-faceted substrate devices with current-carrying patterns on each facet.

Other applications

FIG. 8 is a simplified diagram of an electronic device on which VSD material according to embodiments described herein may be disposed. Fig. 8 shows a device 800 comprising a substrate 810, an element 820 and optionally a housing or casing 830. VSD material 805 can be incorporated into any one or more of a number of locations, including on surface 802, below surface 802 (such as under its trace elements or under elements 820), or in locations within a thickness layer of substrate 810. Alternatively, VSD material may be incorporated into housing 830. In each case, VSD material 805 can be incorporated such that it couples to conductive elements, such as trace leads, when a voltage exceeding a characteristic voltage level is present. Thus, VSD material 805 is a conductive element in the presence of certain voltage conditions.

With respect to any of the applications described herein, the device 800 may be a display device. For example, element 820 may correspond to an LED emitting light from substrate 810. The positioning and configuration of VSD material 805 on substrate 810 can be selective to accommodate electrical leads, terminals (i.e., inputs or outputs), or other conductive elements provided with, used by, or incorporated into the light emitting device. As an alternative embodiment, VSD material may be incorporated between the positive and negative leads of the light emitting device, away from the substrate. Still further, one or more embodiments contemplate the use of organic LEDs, for example, where VSD material can be disposed beneath the OLED.

With respect to LEDs, any of the embodiments described in U.S. patent application No.11/562,289 (which is incorporated herein by reference) can be implemented with VSD material according to any of the embodiments described herein that includes a binder with conductive/semiconductive organic material in the filler material.

Alternatively, the device 800 may correspond to a wireless communication device, such as a radio frequency identification device. With respect to wireless communication devices, such as Radio Frequency Identification Devices (RFID), and wireless communication elements, VSD material can protect element 820 from, for example, overcharging or ESD events. In this case, the element 820 may correspond to a chip of a device or a wireless communication element. Alternatively, the use of VSD material 805 can protect other elements from the charge that may be caused by elements 820. For example, element 820 may correspond to a battery, and VSD material 805 may be provided as trace elements on the surface of substrate 810 to withstand voltage conditions caused by a battery event.

Any of the embodiments described in U.S. patent application No.11/562,222, which is incorporated herein by reference, can be implemented with VSD material comprising a binder and having conductive/semiconductive organic material according to any of the embodiments described herein.

As an alternative embodiment or variant, the element 820 may for example correspond to a separate semiconductor device. VSD material 805 can be integral with the element or positioned to be electrically coupled to the element in the presence of a voltage to turn on the material.

Still further, the device 800 may correspond to a device of an assembly, or alternatively, to a semiconductor assembly for receiving a substrate element. VSD material 805 can be combined with housing 830 before substrate 810 or element 820 is included in the device.

Conclusion

The embodiments described with reference to the figures are to be considered illustrative and the applicant's claims should not be limited to the details of this illustrative embodiment. Various modifications and variations may be included with the described embodiments, including combinations of features described separately in different illustrative embodiments. It is therefore intended that the scope of the invention be defined by the following claims. Moreover, it is contemplated that a particular feature described either individually or as part of an embodiment can be combined with other individually described features or parts of other embodiments, even if the other features and embodiments do not mention the particular feature.

Claims (32)

1. A VSD material, comprising:

a binder comprising a quantity of particles, the quantity of particles comprising a first set of organic particles, the organic particles comprising carbon nanotubes; and

a second set of particles, other than the first set of particles, the second set of particles comprising at least one conductor particle or semiconductor particle;

wherein the amount of particles included in the binder is sufficiently small such that a percolation threshold of the VSD material is not reached; and

wherein the VSD material has the following characteristics: (i) is insulating when there is no voltage exceeding a characteristic voltage level, and (ii) is conductive when a voltage exceeding the characteristic voltage level is applied.

2. The VSD material of claim 1, wherein the quantity of particles is substantially uniformly distributed throughout the thickness of the binder.

3. The VSD material of claim 1, wherein the first set of particles comprises C60 or C70 fullerenes.

4. The VSD material of claim 1, wherein the binder comprises a monomer or oligomer that is conductive or semiconductive.

5. The VSD material of claim 1, wherein the binder comprises electron donor and/or electron acceptor molecules or polymers.

6. The VSD material of claim 1, wherein the binder comprises a compound selected from the group consisting of thiophene, aniline, phenylene-based compounds, 1, 2-vinylene-based compounds, fluorene, naphthalene, pyrrole, acetylene, carbazole, pyrrolidone, cyano-based materials, anthracene, pentacene, rubrene, or perylene.

7. The VSD material of claim 1, wherein the binder comprises a compound selected from the group consisting of poly (3, 4-ethylenedioxythiophene)/poly (styrenesulfonate), (8-hydroxyquinoline) aluminum (III), N '-bis (3-methylphenyl) -N, N' -diphenylbenzidine [ TPD ], N '-di- [ (naphthyl) -N, N' -diphenyl ] -1, 1 '-biphenyl-4, 4' -diamine [ NPD ].

8. The VSD material of claim 1, wherein the first set of particles includes a pure carbon compound corresponding to one of carbon graphite, carbon fiber, or diamond powder.

9. The VSD material of claim 1, wherein the second set of particles comprises a metal or a metal composite.

10. The VSD material of claim 9, wherein the metal composite is selected from the group consisting of oxides, metal nitrides, metal carbides, metal borides, metal sulfides, or combinations thereof.

11. The VSD material of claim 1, wherein the second set of particles comprises a titanium compound.

12. The VSD material of claim 1, wherein the second set of particles comprises titanium dioxide.

13. The VSD material of claim 1, wherein the second set of particles includes titanium diboride or titanium nitride.

14. The VSD material of claim 1, further comprising a quantity of inorganic semiconductor particles distributed in the binder in addition to the first and second sets of particles.

15. The VSD material of claim 14, wherein the quantity of inorganic semiconductor particles includes particles selected from the group consisting of silicon, silicon carbide, boron nitride, aluminum nitride, nickel oxide, zinc sulfide, bismuth oxide, cerium oxide, iron oxide.

16. The VSD material of claim 1, wherein at least some of the second set of particles are surface bound by the organic particles.

17. The VSD material of claim 1, wherein at least some of the second set of particles includes one of titanium dioxide, titanium nitride, titanium diboride.

18. The VSD material of claim 1, wherein the second set of particles includes an organic material having a surface coated onto a surface of the particles.

19. The VSD material of claim 1, wherein the binder is formed from a material selected from the group consisting of silicone polymers, epoxies, polyimides, polyethylenes, phenolics, polypropylenes, polyphenylene oxides, polysulfones, sol-gel materials, ceramics.

20. The VSD material of claim 1, wherein the binder comprises an organic material comprising a chemical moiety covalently bonded to the binder.

21. The VSD material of claim 1, wherein the first set of particles comprises multi-walled carbon nanotubes.

22. A VSD material, comprising:

a binder in an amount in the range of 20-80% by volume;

a quantity of particles comprising (i) conductive particles in an amount ranging from 10% to 60% by volume; and (ii) a conductive or semiconductive organic material in an amount in the range of 0.01-40% by volume, said organic material comprising single-walled and/or multi-walled carbon nanotubes;

wherein the VSD material has the following characteristics: (i) is insulating when there is no voltage exceeding a characteristic voltage level, and (ii) is conductive when a voltage exceeding the characteristic voltage level is applied; and

wherein the amount of particles included in the adhesive is sufficiently small such that the percolation threshold of the VSD material is not reached.

23. The VSD material of claim 22, wherein said organic material comprises a material that is solvent soluble in said binder.

24. The material of claim 22, wherein the organic material comprises particles distributed as nanoscale particles in the binder.

25. A method of producing voltage switchable dielectric VSD material, the method comprising:

mixing a binder with a quantity of particles, the quantity of particles comprising: (i) a first set of carbon nanotubes; and (ii) a second set of particles comprising at least one of metallic particles or semiconductor particles;

curing the adhesive to produce the VSD material to enable the VSD material to be switched from isolation to a load current in response to an applied voltage exceeding a characteristic voltage level of the VSD material without substantial breakdown;

wherein the amount of particles mixed in the binder is sufficiently small that a percolation threshold of the VSD material is not reached.

26. The method of claim 25, further comprising applying the binder and the quantity of particles to a target location on a device, and wherein curing the mixture of the binder and the quantity of particles comprises curing the mixture at the target location.

27. The method of claim 25, wherein the second set of particles comprises particles selected from the group consisting of copper, aluminum, nickel, and steel, or silicon, silicon carbide, boron nitride, aluminum nitride, nickel oxide, zinc sulfide, bismuth oxide, cerium oxide, iron oxide.

28. The method of claim 25 wherein said second set of particles comprises a titanium compound.

29. The method of claim 25, wherein the second set of particles comprises titanium dioxide.

30. A voltage switchable dielectric material formed by the process of:

mixing a binder with a quantity of particles, the quantity of particles comprising: (i) a first set of carbon nanotubes; and (ii) a second set of particles comprising at least one of metallic particles or semiconductor particles;

curing the adhesive to produce the VSD material to enable switching of the VSD material from insulation to a load current, the switching resulting from the applied voltage exceeding a characteristic voltage level of the VSD material when not broken down;

wherein the amount of particles included in the adhesive is sufficiently small such that the percolation threshold of the VSD material is not reached.

31. An electronic device comprising the VSD material of any of claims 1-21.

32. The electronic device of claim 31, wherein the device is selected from the group consisting of a discrete device, a semiconductor component, a display device or backplane, a light emitting diode, and a radio frequency identification device.