JP2000089249A - Electrooptical device, driving substrate for the device and their production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce an electrooptical device such as a thin film semiconductor device for display built-in a high performance driver by forming a layer of a material which is good in lattice matching with single crystal silicon on a substrate and carrying out hetero-epitaxial growth using the layer as a seed. SOLUTION: A layer of a material which is good in lattice matching with single crystal silicon, is formed on a substrate so that hetero-spitaxial growth is carried out by using the layer as a seed. For example, a thin crystalline sapphire film 50 is formed on the substrate 1 provided with steps 4 having a prescribed shape and dimension and hetero-epitaxial growth at a low temperature is carried out using the film 50 as a seed. Since a thin single crystal silicon film 7 having a high electron transfer degree of >=540 cm2/v.sec is obtained, a reflection type liquid crystal display device built-in a high performance driver can be produced. Since the steps 4 promote the exitaxial growth, the thin single crystal silicon film 7 having higher crystallinity is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electro-optical device, a driving substrate for the electro-optical device, and a method for manufacturing the same, and more particularly, to a top gate using a single-crystal silicon layer heteroepitaxially grown on an insulating substrate as an active region. Type thin film insulated gate field effect transistor (hereinafter referred to as a top gate type MOSTFT. The top gate type includes a staggered type and a coplanar type) and a liquid crystal display device having a passive region. It is about the method.

[0002]

2. Description of the Related Art An active matrix type liquid crystal display device has a display portion using amorphous silicon for a TFT and an external driving circuit IC, and a display using a polycrystalline silicon for a TFT by a solid phase growth method. Unit and driving circuit integrated (Japanese Patent Laid-Open No. 6-242433), excimer laser-annealed polycrystalline silicon TFT
(Japanese Patent Laid-Open No. 7-13)
No. 1030).

[0003]

However, the above-mentioned conventional amorphous silicon TFT has good productivity, but has a low electron mobility of about 0.5 to 1.0 cm ² / v · sec. MOSTFT (hereinafter pMO
Called STFT. ) Can not be made. Therefore, p
Since the peripheral driver using the MOSTFT cannot be formed on the same glass substrate as the display, the driver IC is externally mounted and mounted by the TAB method or the like, so that cost reduction is difficult. For this reason, there is a limit to high definition. Further, the electron mobility is 0.5 to 1.0 cm ² / v · s
Since it is as low as around ec, sufficient on-current cannot be obtained, and when used in a display portion, the transistor size is inevitably increased, which is disadvantageous for a high aperture ratio of a pixel.

In addition, the above-described conventional polycrystalline silicon TF
Since the electron mobility of T is 70 to 100 cm ² / v · sec, which can cope with high definition, an LCD (liquid crystal display) using a polycrystalline silicon TFT integrated with a driving circuit has recently attracted attention. However, a large LCD of 15 inches or more
, The electron mobility of polycrystalline silicon is 70-100.
Because of cm ² / v · sec, the driving ability is insufficient, and eventually, an external driving circuit IC is required.

In a TFT using polycrystalline silicon formed by a solid phase growth method, annealing is performed at a temperature of 600 ° C. or more for more than 10 hours, and a gate Si is formed by thermal oxidation at about 1000 ° C.
Since the formation of O ₂ is necessary, a semiconductor manufacturing apparatus has to be adopted. For this reason, a wafer size of 8 to 12 inches φ is a limit, and it is inevitable to use expensive quartz glass having high heat resistance, and it is difficult to reduce the cost. Therefore, EV
F and data / AV projector applications.

Further, in the above-described conventional polycrystalline silicon TFT by excimer laser annealing, there are many problems such as stability of excimer laser output, productivity, increase in apparatus price due to increase in size, reduction in yield / quality, and the like. .

[0007] In particular, when a large glass substrate of 1 m square or the like is used, the above-mentioned problems are magnified, and it becomes more difficult to improve performance / quality and reduce costs.

An object of the present invention is to provide an active matrix substrate with a built-in high-performance driver by forming a single-crystal silicon thin film having a high electron / hole mobility at a relatively low temperature and uniformly, particularly in a peripheral driving circuit portion. Enables the manufacture of electro-optical devices such as display thin film semiconductor devices using the same, and has an LDD structure (Li
ghtly doped drain structure) n-channel MOSTF
T (hereinafter referred to as nMOSTFT) or pMOSTF
T or a display portion of a complementary thin film insulated gate field effect transistor (hereinafter referred to as cMOSTFT) having a high driving capability, and the cMOSTFT, nMOSTFT or pMOT.
It is possible to integrate the STFT or a peripheral drive circuit composed of a mixture of them, and realize a high-quality, high-definition, narrow-frame, high-efficiency, large-screen display panel. It can be used even for large glass substrates with low cost, high productivity, no expensive manufacturing equipment is required, cost can be reduced, and threshold adjustment is easy and high speed operation due to low resistance And to enable a large screen.

[0009]

That is, the present invention relates to a pixel electrode (for example, a plurality of pixel electrodes arranged in a matrix):
The same applies to the following. A display unit provided with the same) and a peripheral drive circuit unit provided around the display unit are provided on a first substrate (that is, a driving substrate: the same applies hereinafter). 1st substrate and 2nd
An electro-optical device in which a predetermined optical material such as a liquid crystal is interposed between the substrate and the substrate (that is, a counter substrate; the same applies hereinafter); and a driving substrate for the electro-optical device, one of the first substrates A material layer having good lattice matching with a single crystal semiconductor such as single crystal silicon is formed on the surface of the first substrate, and a single crystal semiconductor layer such as a single crystal silicon layer is formed on the first substrate including the material layer; The present invention relates to an electro-optical device in which the single crystal semiconductor layer forms at least an active element of an active element and a passive element, and to a driving substrate thereof. Note that, in the present invention, the single crystal semiconductor layer includes not only a single crystal silicon layer but also a single crystal compound semiconductor layer (the same applies hereinafter). The active element is a concept including a thin film transistor or another element such as a diode, and the passive element is a concept including a resistor or the like (hereinafter the same). A typical example of the thin film transistor is a field effect transistor (FET) (which includes an MO transistor).
There are S type and junction type, but either type is acceptable. ) And bipolar transistors, but the present invention can be applied to any of the transistors (the same applies hereinafter). The passive element is a concept including resistance, inductance, capacitance, and the like. For example, the passive element is an electrode (electrode) such as a single crystal silicon layer or the like in which a high dielectric film such as silicon nitride (hereinafter referred to as SiN) is reduced in resistance. There is a capacitance formed sandwiching.

According to the present invention, in the method of manufacturing an electro-optical device and a driving substrate thereof, a material layer having good lattice matching with a single-crystal semiconductor such as single-crystal silicon is formed on one surface of the first substrate. Forming and a catalytic CVD method or a high-density plasma CV on the first substrate including the material layer.
A step of heteroepitaxially growing a single-crystal silicon layer such as a single-crystal silicon layer using the material layer as a seed by a method D or the like; and performing a predetermined treatment on the single-crystal semiconductor layer to at least the active element of the active element and the passive element. (E.g., after depositing the single crystal silicon layer, subjecting the single crystal silicon layer to a predetermined process to form a channel region, a source region, and a drain region; and forming a gate insulating film on the channel region. And a gate section comprising a gate electrode, and further, a source and drain electrode, and a top-gate first thin film transistor (especially MOSFET: the same applies hereinafter) constituting at least a part of the peripheral drive circuit section. Or receiving the resistance, capacitance, inductance, etc. Characterized by a step) for forming a device, a method of manufacturing an electro-optical device, and the manufacturing method of a driving substrate is intended to provide.

According to the present invention, the above-mentioned material layer (for example, a crystalline sapphire film) which has good lattice matching with single-crystal silicon, in particular
As a seed, catalytic CVD method, high-density plasma CVD
A single crystal semiconductor thin film such as a single crystal silicon thin film is formed by heteroepitaxial growth by a method such as a method, and the epitaxial growth layer is used as a top gate type MOSTFT of a peripheral driving circuit of a driving substrate such as an active matrix substrate or a display-peripheral driving circuit integrated type. Since it is used for at least an active element such as a top gate type MOSTFT of a peripheral drive circuit of an electro-optical device such as an LCD and a passive element such as a resistor, an inductance and a capacitance, the following (A) to (G) ) Can be obtained.

(A) A material layer (for example, a crystalline sapphire film) having good lattice matching with single crystal silicon is formed on a substrate,
By heteroepitaxially growing the material layer as a seed, a single-crystal semiconductor layer such as a single-crystal silicon thin film having a high electron mobility of 540 cm ² / v · sec or more can be obtained. And the like can be manufactured.

(B) In particular, the single-crystal silicon thin film exhibits high electron and hole mobilities comparable to those of a single-crystal silicon substrate as compared with a conventional amorphous silicon thin film or polycrystalline silicon thin film. The top gate type MOSTFT has a high switching characteristic [preferably, an LDD (L
nMOS or pM having a (ightly doped drain) structure]
A display unit composed of an OSTFT or a cMOSTFT and a peripheral driving circuit unit composed of a cMOS having a high driving capability, or an nMOS, a pMOSTFT, or a mixture of these can be integrated, thereby achieving high image quality, high definition, a narrow frame, and high efficiency. ,
A large-screen display panel is realized. In particular, polycrystalline silicon has a high hole mobility pMOS as a TFT for LCD.
Although it is difficult to form a TFT, the single crystal silicon thin film according to the present invention exhibits sufficiently high mobility even with holes, so that a peripheral drive circuit that drives electrons and holes alone or in combination of both can be manufactured. This is nMOS or pMOS
Alternatively, a panel integrated with a TFT for a display portion having a cMOS LDD structure can be realized. In the case of a small to medium-sized panel, there is a possibility that one of a pair of peripheral vertical drive circuits can be omitted.

(C) Then, the above-mentioned material layer is used as a seed for heteroepitaxial growth, and a catalytic CVD method (chemical vapor deposition using a catalyst: a substrate temperature of 200 to 800 ° C., particularly 300 to 300 ° C.) is formed on this material layer. Since a single-crystal semiconductor layer such as a single-crystal silicon layer can be formed by a low-temperature deposition technique such as 400 ° C., a silicon single-crystal film or the like can be uniformly formed on a substrate at a low temperature. Therefore, a glass substrate having a relatively low strain point, a heat-resistant organic substrate, or the like can be easily obtained, a low-cost substrate having good physical properties can be used, and the substrate can be enlarged.

(D) It is not necessary to anneal at a medium temperature for a long time (about 600 ° C., about ten and several hours) or excimer laser annealing as in the case of the solid phase growth method. Is unnecessary and cost can be reduced.

(E) In this heteroepitaxial growth, the crystallinity of the material layer such as crystalline sapphire,
Vth (threshold value) adjustment because a wide range of P-type or N-type conductivity type and high-mobility single-crystal silicon thin film can be easily obtained by adjusting the gas composition ratio such as the temperature of the substrate and the cooling rate of the substrate. And a high-speed operation can be achieved by lowering the resistance.

(F) In addition, when forming single crystal silicon by catalytic CVD or the like, an impurity element of group 3 or 5 (boron,
Phosphorous, antimony, arsenic, bismuth, aluminum, etc.)
It is possible to arbitrarily control the impurity species and / or the concentration of the single crystal silicon thin film formed by heteroepitaxial growth, that is, the conductivity type such as P-type / N-type and / or the carrier concentration.

(G) The material layer such as a crystalline sapphire thin film serves as a diffusion barrier for various atoms, so that diffusion of impurities from the glass substrate can be suppressed.

[0019]

In the present invention, a predetermined process is performed on the single-crystal silicon layer to form a channel region, a source region and a drain region, and a first gate type first gate having a gate portion above the channel region. It is preferable that the thin film transistor described above forms at least a part of the peripheral drive circuit section.

An insulating substrate is used as the first substrate, and the material layers are sapphire (Al ₂ O ₃ ), a spinel structure (eg, MgO.Al ₂ O ₃ ), calcium fluoride (CaF ₂ ), Strontium fluoride (SrF
₂ ), barium fluoride (BaF ₂ ), boron phosphide (B
P), yttrium oxide ((Y ₂ O ₃ ) _m ), zirconium oxide ((ZrO ₂ ) _{1 -m} ), and the like.

Using such a material layer as a seed, the single crystal silicon layer is subjected to catalytic CVD (substrate temperature of about 200 to 8).
00 ° C.). The substrate can be heated by a method of uniformly heating the entire substrate using an electric furnace, a lamp, or the like, or by a method of locally heating only a predetermined location using an optical laser, an electron beam, or the like.

In forming the single crystal silicon layer by the catalytic CVD method, a gas containing silicon hydride as a main component is brought into contact with a catalyst heated to, for example, 800 to 2000 ° C. (less than the melting point) to decompose the gas. The single crystal silicon layer can be deposited on the substrate.

In this case, a silane-based gas such as monosilane, disilane, trisilane and tetrasilane is used as the silicon hydride, and tungsten, molybdenum, platinum, palladium, silicon, alumina, and tungsten containing thorium oxide are used as the catalyst. At least one material selected from the group consisting of ceramics to which a metal is attached and silicon carbide may be used.

In the present invention, since an insulating substrate, particularly a glass substrate having a low strain point or a heat-resistant organic substrate is used as the substrate, a single-crystal silicon layer can be formed on a large-sized glass substrate (for example, 1 m ² or more). Possible, but catalyst CV
Since the substrate temperature at D is low as described above, glass having a low strain point of 470 to 670 ° C. can be used as the glass substrate. Such a substrate is inexpensive, easily thinned, and a long rolled glass plate can be manufactured.
Using this, a single-crystal silicon thin film formed by heteroepitaxial growth can be continuously or discontinuously formed on a long rolled glass plate or a heat-resistant organic substrate by the above method.

As described above, since the constituent elements are easily diffused from the inside of the glass into the upper layer of the glass having a low strain point, in order to suppress the diffusion, a diffusion barrier layer, for example, silicon nitride (SiN) or the like is used. Membrane (thickness eg 50-
(About 200 nm).

If a doping gas such as PH ₃ or B ₂ H ₆ is mixed in the supply gas at the time of the above-mentioned catalytic CVD or the like, the single crystal silicon layer is converted into n-type or p-type, and nM
OSTFT or pMOSTFT can be made. For this reason, a cMOSTFT can also be produced.

As described above, the single crystal silicon layer heteroepitaxially grown on the substrate is applied to a channel region, a source region and a drain region of a top gate type MOSTFT constituting at least a part of a peripheral driving circuit.
The impurity species in each of these regions and / or the concentration thereof can be controlled.

The peripheral driver circuit section and the thin film transistor of the display section constitute an n-channel, p-channel or complementary insulated gate field-effect transistor, for example, a set of complementary and n-channel transistors and a complementary and p-channel transistor. It may be composed of a set of a channel type or a set of a complementary type, an n-channel type and a p-channel type. Further, it is preferable that at least a part of the thin film transistor of the peripheral drive circuit section and / or the display section has an LDD (Lightly doped drain) structure. Note that the LDD structure may be provided not only between the gate and the drain, but also between the gate and the source, or between the gate and the source and between the gate and the drain (this is called a double LDD).

In particular, the MOSTFT has n
A MOS or pMOS or cMOS LDD type TFT is formed, and a cMOS or nMOS
Alternatively, a pMOS TFT or a mixture of these may be formed.

In the present invention, a step is formed on the substrate and / or the film thereon, and the step is formed such that the side surface is perpendicular to the bottom surface in the cross section or forms a bottom angle of preferably 90 ° or less to the lower end side. As a concave part that becomes inclined,
The step is preferably formed on an insulating substrate or a film such as SiN (or both) on the insulating substrate, and the step is preferably used as a seed during epitaxial growth of the single crystal silicon layer. The step is preferably formed along at least one side of an element region formed by the channel region, the source region, and the drain region of the active element, for example, a thin film transistor. It is preferable that the passive element is formed along at least one side of an element region in which a resistor is formed.

In this case, a step having a predetermined shape as described above serving as a seed for the epitaxial growth is formed at a predetermined position on the insulating substrate as the substrate, and the material layer is formed on the insulating substrate including the step. be able to.

Alternatively, a step having a predetermined shape similar to the above may be formed in the material layer, and the single crystal silicon layer may be formed on the material layer including the step.

In these cases, the step acts as a seed in addition to the material layer, so that a single crystal silicon layer having higher crystallinity can be formed.

The first thin film transistor such as the MOSTFT may be provided in the concave portion of the substrate due to the step, but may be provided on the substrate near the concave portion outside the concave portion or both of them. The step may be formed by dry etching such as reactive ion etching.

In this case, the step is formed on one surface of the first substrate, and a monocrystalline, polycrystalline or amorphous silicon layer is formed on the substrate including the step, and the second thin film transistor is formed. Using the single crystal, polycrystalline or amorphous silicon layer as a channel region, a source region and a drain region,
Alternatively, a top gate type, a bottom gate type, or a dual gate type having a gate portion at a lower portion may be used.

Also in this case, the step similar to the above is formed as a concave portion in which the side surface is perpendicular to the bottom surface in the cross section or inclined so as to form a bottom angle of preferably 90 ° or less toward the lower end. This step is used as a seed during epitaxial growth of the single crystal silicon layer.

The second thin film transistor is provided with the first thin film transistor.
The source, the drain, and the like are provided inside and / or outside of the substrate concave portion due to the step formed on the substrate and / or the film formed on the substrate and using a single crystal silicon layer formed by grapho-epitaxial growth similarly to the first thin film transistor. Each region of the channel may be formed.

Also in this second thin film transistor, similarly to the above, the impurity species of Group 3 or Group 5 of the single crystal, polycrystalline or amorphous silicon layer and / or the concentration thereof can be controlled, and the step can be reduced by the second step. The thin film transistor may be formed along at least one side of an element region formed by the channel region, the source region, and the drain region. Further, it is preferable that the gate electrode under the single crystal, polycrystal or amorphous silicon layer has a trapezoidal shape at its side end. A diffusion barrier layer may be provided between the first substrate and the single crystal, polycrystalline or amorphous silicon layer.

It is preferable that a source or drain electrode of the first and / or second thin film transistor is formed on a region including the step.

The first thin film transistor is at least a top gate type selected from a top gate type, a bottom gate type or a dual gate type having a gate portion above and / or below a channel region; , The switching element for switching the pixel electrode may be the top gate type, the bottom gate type, or the dual gate type second thin film transistor.

In this case, the gate electrode provided below the channel region is formed of a heat-resistant material, or the upper gate electrode of the second thin film transistor and the gate electrode of the first thin film transistor are formed of a common material. May do it.

In the peripheral driver circuit section, in addition to the first thin film transistor, a top gate type having a polycrystalline or amorphous silicon layer as a channel region and having a gate portion above and / or below the channel region;
A bottom-gate or dual-gate thin film transistor, or a diode, a resistor, a capacitor, an inductance element, or the like using the single-crystal silicon layer, the polycrystalline silicon layer, or the amorphous silicon layer may be provided.

The peripheral driver circuit section and / or the thin film transistor of the display section may be configured as a single gate or a multi-gate.

When the n-type or p-channel type thin film transistor of the peripheral driver circuit portion and / or the display portion is a dual gate type, the upper or lower gate electrode is electrically open or an arbitrary negative voltage (n It is preferable that a thin film transistor of a bottom-gate type or a top-gate type be operated by applying a positive voltage (in the case of a channel type) or a positive voltage (in the case of a p-channel type).

The thin film transistor of the peripheral drive circuit section is an n-channel type, a p-channel type or a complementary type of the first thin film transistor.
When the single-crystal silicon layer is used as a channel region, the thin-film transistor of the display portion is an n-channel type, a p-channel type, or a complementary type. When an amorphous silicon layer is used as a channel region, an n-channel type, a p-channel type, or a complementary type may be used.

In the present invention, after the growth of the single crystal silicon layer, an upper gate portion including a gate insulating film and a gate electrode is formed on the single crystal silicon layer, and the upper gate portion is used as a mask to form the single crystal silicon layer. Group 3 or 5 in layer
The channel region, the source region, and the drain region may be formed by introducing a group III impurity element.

When the second thin film transistor is a bottom gate type or a dual gate type, a lower gate electrode made of a heat resistant material is provided below the channel region, and a gate insulating film is formed on the gate electrode. After forming the lower gate portion, the second thin film transistor can be formed through a process common to the first thin film transistor including the step of forming the step. In this case, the upper gate electrode of the second thin film transistor and the gate electrode of the first thin film transistor can be formed of a common material.

After forming the single-crystal silicon layer on the lower gate portion, an impurity element of group 3 or 5 is introduced into the single-crystal silicon layer to form source and drain regions, and then activated. Processing can be performed.

After the formation of the single crystal silicon layer, the source and drain regions of the first and second thin film transistors are formed by ion implantation of the impurity element using a resist as a mask. After forming the gate insulating film, the gate electrode of the first thin film transistor and, if necessary, the upper gate electrode of the second thin film transistor may be formed.

When the thin film transistor is a top gate type, after forming the single crystal silicon layer, each source and drain region of the first and second thin film transistors is formed by ion implantation of the impurity element using a resist as a mask. After the ion implantation, an activation process is performed, and thereafter, each gate portion including the gate insulating film and the gate electrode of the first and second thin film transistors can be formed.

Alternatively, when the thin film transistor is a top gate type, after forming the single crystal silicon layer, each gate insulating film of the first and second thin film transistors and each gate electrode made of a heat-resistant material are formed. Forming a gate portion, forming each source and drain region by ion implantation of the impurity element using these gate portions as a mask,
An activation process may be performed after the ion implantation.

Further, ion implantation for forming a source region and a drain region can be performed by using a resist mask covering the resist mask used in forming the LDD structure.

The substrate may be optically opaque or transparent, and a reflective or transmissive display pixel electrode may be provided.

When the display section has a laminated structure of the pixel electrode and the color filter layer, the color filter is formed on the display array section to improve the aperture ratio and brightness of the display panel. In addition, the cost can be reduced by omitting the color filter substrate and improving the productivity.

In this case, when the pixel electrode is a reflective electrode, irregularities are formed on the resin film so as to obtain optimum reflection characteristics and viewing angle characteristics, and the pixel electrode is provided thereon. In the case of a transparent electrode, the surface is preferably flattened by a transparent flattening film, and a pixel electrode is preferably provided on this flattened surface.

The display section is configured to emit light or modulate light by being driven by the MOSTFT. For example, a liquid crystal display (LCD), an electroluminescence display (E)
L) or field emission display (FED), light emitting polymer display (LEPD), light emitting diode display (LE
D) or the like. In this case, a plurality of the pixel electrodes may be arranged in a matrix on the display unit, and the switching element may be connected to each of the pixel electrodes.

Next, the present invention will be described in more detail with reference to preferred embodiments.

<First Embodiment> FIGS. 1 to 12 show a first embodiment of the present invention.

In the present embodiment, the above-mentioned material layer (for example, a crystalline sapphire film) is formed on the surface including the above-mentioned steps (concave portions) provided on the heat-resistant substrate, and this material layer is used as a seed for catalytic CVD. A single-crystal silicon layer is heteroepitaxially grown by the
The present invention relates to an active matrix reflective liquid crystal display (LCD) including an OSTFT. First, the overall layout of the reflective LCD will be described with reference to FIGS.

As shown in FIG. 10, in this active matrix reflective LCD, a main substrate 1 (which constitutes an active matrix substrate) and a counter substrate 32 are bonded together via a spacer (not shown). It has a flat panel structure, and liquid crystal (not shown here) is sealed between both substrates 1-32. On the surface of the main substrate 1, a display unit including pixel electrodes 29 (or 41) arranged in a matrix, a switching element for driving the pixel electrodes, and a peripheral drive circuit unit connected to the display unit are provided. Is provided.

The switching element of the display section is composed of a top gate type MOSTFT having an LDD structure of an nMOS, pMOS or cMOS according to the present invention. In the peripheral drive circuit section, cMOS or nMOS or pMOS of a top gate type MOSTFT according to the present invention is also used as a circuit element.
MOSTFTs or a mixture thereof are formed. Note that one of the peripheral drive circuit units is a horizontal drive circuit that supplies a data signal to drive the TFT of each pixel for each horizontal line, and the other peripheral drive circuit unit connects the gate of the TFT of each pixel for each scan line. , And are usually provided on both sides of the display unit. These drive circuits can be configured in either a dot-sequential analog system or a line-sequential digital system.

As shown in FIG. 11, the above-mentioned TFT is arranged at the intersection of the orthogonal gate bus line and data bus line, and image information is written into a liquid crystal capacitor (C _LC ) via this TFT, and the next information is written. Holds electric charge until comes. In this case, it is not enough to hold the TFT channel resistance alone. To compensate for this, a storage capacitor (auxiliary capacitor) (C _S ) is added in parallel with the liquid crystal capacitor to compensate for a decrease in the liquid crystal voltage due to leak current. May be. Such TF for LCD
In T, the required performance differs between the characteristics of the TFT used for the pixel portion (display portion) and the characteristics of the TFT used for the peripheral drive circuit. In the TFT of the pixel portion, it is important to control the off current and secure the on current. It becomes a problem. For this reason, the display unit
By providing a TFT having an LDD structure as described below,
As a structure in which an electric field is hardly applied between the gate and the drain, an effective electric field applied to the channel region can be reduced, an off current can be reduced, and a change in characteristics can be reduced. However, the process becomes complicated, the element size becomes large, and problems such as a decrease in on-current occur. Therefore, an optimum design is required for each purpose of use.

Usable liquid crystals include TN liquid crystal (nematic liquid crystal used in the TN mode of active matrix drive), STN (super twisted nematic), GH (guest host), PC (phase change). , FLC (ferroelectric liquid crystal), AFL
Liquid crystals for various modes such as C (antiferroelectric liquid crystal) and PDLC (polymer dispersed liquid crystal) may be employed.

Referring to FIG. 12, an outline of a circuit system of a peripheral driving circuit and a driving method thereof will be described. The driving circuit is divided into a gate side driving circuit and a data side driving circuit.
It is necessary to configure a shift register on both the data side.
Shift registers are generally pMOSTFT and nMOS
Using both TFTs (so-called CMOS circuit)
Some use only one of the MOSTFTs. However, in terms of operating speed, reliability, and low power consumption, cMOST
FT or CMOS circuits are common.

The scanning drive circuit is composed of a shift register and a buffer, and sends a pulse synchronized with the horizontal scanning period to each line from the shift register. On the other hand, there are two driving methods for the data side driving circuit, a dot sequential method and a line sequential method. In the dot sequential method shown in the figure, the circuit configuration is relatively simple, and the display signal is controlled by a shift register through an analog switch. While writing to each pixel directly. Write sequentially to each pixel within one horizontal scanning time (R, G,
B schematically shows a pixel for each color).

Next, an active matrix reflective LCD according to the present embodiment will be described with reference to FIGS. However, in FIGS. 1 to 5, the left side of each drawing shows the manufacturing process of the display unit, and the right side shows the manufacturing process of the peripheral drive circuit unit.

First, as shown in FIG. 1A, on one main surface of an insulating substrate 1 such as borosilicate glass, quartz glass, or transparent crystallized glass, a photoresist 2 is formed at least in a TFT formation region. It formed in a predetermined pattern, which is irradiated with eg CF ₄ plasma F ⁺ ions 3 as a mask, the step 4 to the substrate 1 suitable by a general purpose photolithography and etching such as reactive ion etching (RIE) (photoetching) A plurality of shapes and dimensions are formed.

In this case, quartz glass is used as the insulating substrate 1,
High heat-resistant substrates (8 to 1) made of transparent crystallized glass, ceramics, and the like (however, an opaque ceramic substrate or low-transparency crystallized glass cannot be used in a transmission type LCD described later).
2 inch φ, 700 to 800 μm thick) can be used. The step 4 serves as a seed during the later-described single crystal silicon epitaxial growth, and has a depth d0.
1 μm, width w5 to 10 μm, length (perpendicular to the paper surface) 10
May be up to 20 μm, the angle between the base and the side (base angle)
Is a right angle. Note that, on the surface of the substrate 1, a SiN film (for example, 50 to 200 nm thick) and a silicon oxide film (hereinafter, referred to as an SiO ₂ film) as needed (for example, a SiO ₂ film) to prevent diffusion of Na ions and the like from the glass substrate. About 100nm thick)
May be continuously formed in advance.

Next, as shown in FIG. 1B, after the photoresist 2 is removed, a crystalline sapphire thin film (thickness: 20) is formed on at least the TFT forming region including the step 4 on one main surface of the insulating substrate 1. (~ 200 nm) 50 is formed. The crystalline sapphire thin film 50 is formed by oxidizing trimethylaluminum gas or the like with an oxidizing gas (oxygen / moisture) by a high-density plasma CVD method, a catalytic CVD method (see JP-A-63-40314), or the like. And create it. As the insulating substrate 1, a high heat-resistant glass substrate (8 to 1
2 inch φ, 700 to 800 μm thick) can be used.

Next, as shown in (3) of FIG. 1, the catalyst C disclosed in JP-A-63-40314 and the like is used.
By the VD method (substrate temperature 200 to 800 ° C.), a step 4
A single-crystal silicon film 7 of several μm to 0.005
Heteroepitaxial growth is performed to a thickness of μm (for example, 0.1 μm). When the substrate 1 is borosilicate glass, the substrate temperature is 200 to 600 ° C., and when the substrate 1 is a quartz glass, crystallized glass, or ceramic substrate, the substrate temperature is 600 to 800.
° C.

In this case, catalytic CVD may be performed using the apparatus shown in FIG. According to this catalytic CVD apparatus, silicon hydride (for example, monosilane or disilane) gas 10
0 (and B ₂ H ₆ and PH ₆ optionally, A doping gas such as _S H ₃₎ is introduced from the supply conduit to the deposition chamber 101. Inside the deposition chamber 101, a susceptor 102 for supporting the substrate 1 and a coil-shaped catalyst body 103 arranged opposite to the susceptor are arranged. Then, the substrate 1 is heated by an external heating means 104 (for example, an electric heating means), and the catalyst body 103 is activated by heating it to, for example, a resistance wire below its melting point (especially 800 to 2000 ° C., in the case of tungsten, about 1700 ° C.). Is done.

In the deposition chamber 101, the atmosphere is vented from nitrogen to hydrogen (about 15 to 20 minutes),
The temperature is raised to about 800 ° C., and the silane gas comes into contact with the catalyst body 103 to be catalytically decomposed and deposited on the substrate 1 maintained at a low temperature (for example, 300 ° C.). The deposition time is determined from the thickness of the epitaxially grown layer to be grown. After the growth is completed, the temperature is lowered, hydrogen is ventilated to nitrogen, and the substrate 1 is taken out. In this manner, a silicon atom or a group of atoms having high energy is formed by the catalytic reaction or the thermal decomposition reaction by the catalyst body 103 and is deposited on the step 4 serving as a seed. The single crystal silicon film can be deposited in a low temperature region that is significantly lower than the deposition possible temperature in.

The substrate 1 can be heated not only by a method of uniformly heating the entire substrate using an electric furnace or the like, but also by a light laser, an electron beam or the like at a predetermined location, for example, a TFT.
A method of locally heating only the formation region is also possible.

In the single-crystal silicon layer 7 deposited as described above, for example, the (100) plane is heteroepitaxially grown on the substrate because the crystalline sapphire film 50 shows good lattice matching with single-crystal silicon. In this case, the single crystal silicon layer 7 having higher crystallinity can be obtained by heteroepitaxial growth of the step 4 taking into account a known phenomenon called grapho-epitaxial growth. For this,
As shown in FIG. 8, when a vertical wall such as the above-described step 4 is formed on the amorphous substrate (glass) 1 and an epitaxy layer is formed thereon, a random plane orientation as shown in FIG. As shown in FIG. 8B, the (100) plane grows along the surface of the step 4 as shown in FIG. The size of this single crystal grain increases in proportion to the temperature and time,
When shortening, it is necessary to shorten the interval between the steps. The crystal orientation of the growth layer can be controlled by variously changing the shape of the step as shown in FIGS. 9A to 9F. When fabricating MOS transistors, the (100) plane is most often employed. In short, the cross-sectional shape of the step 4 may be such that the angle of the base corner (base angle) is a right angle, or may be inclined inward or outward from the upper end to the lower end. You only need to have it. The base angle of step 4 is usually a right angle or 9
It is desirable that the angle is equal to or less than 0 °, and the corner of the bottom surface has a slight curvature.

After the single-crystal silicon layer 7 is deposited on the substrate 1 by the catalytic CVD method and heteroepitaxial growth in this manner, a top-gate MOSTFT using the single-crystal silicon layer 7 as a channel region is manufactured.

First, since the impurity concentration of the single crystal silicon thin film 7 due to the epitaxial growth varies, the entire surface is doped with an appropriate amount of a P-type carrier impurity, for example, boron ions, to adjust the specific resistance. Also, pMOS
An N-type well is formed by selectively doping an N-type carrier impurity only in the TFT formation region. For example, a p-channel TFT portion is masked with a photoresist (not shown), and P-type impurity ions (for example, B ⁺ ) are applied at 10 kV.
Doping is performed at a dose of 7 × 10 ¹¹ atoms / cm ² to adjust the specific resistance. Further, as shown in FIG. 1D, for controlling the impurity concentration in the pMOSTFT formation region,
The nMOSTFT portion is masked with a photoresist 60, and N
Type impurity ions (for example, P ⁺ ) 65 at 10 kV and 1 × 1
Doping at a dose of 0 ¹¹ atoms / cm ² ,
Form the mold well 7A.

Then, as shown in FIG. 2 (5), SiO ₂ (about 20) is formed on the entire surface of the single crystal silicon thin film layer 7 by plasma CVD, high density plasma CVD, catalytic CVD, or the like.
0 nm thick) and SiN (approximately 100 nm thick) are sequentially formed in this order to form a gate insulating film 8.
Tantalum (Mo.Ta) alloy sputtered film 9 (500-
(Thickness: 600 nm).

Next, as shown in FIG. 2 (6), a photoresist pattern is formed in the step region (in the recess) between the TFT portion in the display region and the TFT portion in the peripheral drive region by a general-purpose photolithography technique. Then, a gate electrode 11 of (Mo.Ta) alloy and a gate insulating film (SiN / SiO ₂ ) 12 are formed by continuous etching to expose the single crystal silicon thin film layer 7. (Mo
・ Ta) alloy film 9 is an acid-based etching solution, SiN is CF ₄
Gas plasma etching and SiO ₂ are treated with a hydrofluoric acid-based etchant.

Next, as shown in FIG. 2 (7), the entire nMOS and pMOSTFT in the peripheral drive region and the gate portion of the nMOSTFT in the display region are covered with a photoresist 13, and the source / drain regions of the exposed nMOSTFT are covered. Phosphorus ions 14 are converted to 5 × 10 ¹³ a at 20 kV, for example.
By doping (ion implantation) at a dose of toms / cm ^2, the LDD portion 15 made of an N ⁻ -type layer is formed in a self-aligned (self-aligned) manner.

Next, as shown in FIG. 3 (8), all of the pMOS TFTs in the peripheral drive region and nM
The gate portion of the OSTFT and the gate and the LDD portion of the nMOSTFT in the display area are covered with a photoresist 16, and phosphorus or arsenic ions 17 are added to the exposed area, for example, for 2 hours.
By doping (ion implantation) at 0 kV and a dose of 5 × 10 ¹⁵ atoms / cm ² , the source 18 and the drain 19 and the LDD 15 made of the N ⁺ type layer of the nMOS TFT are formed.

Next, as shown in FIG. 3 (9), the nMOSTFT in the peripheral drive area and the nMOSTF in the display area
All of the T and the gate of the pMOSTFT are covered with a photoresist 20, and the exposed area is doped with boron ions 21 at, for example, 10 kV at a dose of 5 × 10 ¹⁵ atoms / cm ² (ion implantation) to form a P
The source part 22 and the drain part 23 of the ⁺ layer are formed. This operation is performed in the case of the pMOS in the case of the nMOS peripheral drive circuit.
This is unnecessary work because there is no STFT.

Next, as shown in FIG.
A photoresist 24 is provided to make an active element portion such as an FT or a diode or a passive element portion such as a resistor or an inductance into an island, and a single crystal other than the active element portion and the passive element portion in the peripheral driving region and the display region is provided. The silicon thin film layer is removed by general-purpose photolithography and etching techniques. The etching solution is hydrofluoric acid.

Then, as shown in FIG. 4 (11), an SiO ₂ film (about 200 nm thick) and a phosphosilicate glass (PSG) film (about 300 nm thick) are formed by plasma CVD, high-density plasma CVD, catalytic CVD, or the like. ) Are continuously formed on the entire surface in this order to form the protective film 25.

Then, in this state, the single crystal silicon layer is activated. In this activation, lamp annealing conditions such as halogen are about 1000 ° C. and about 10 seconds, and a gate electrode material that can withstand this is required.
-Ta alloy is suitable. This gate electrode material therefore
The wiring can be provided not only as a gate portion but also as a wiring over a wide range. Here, expensive excimer laser annealing is not used, but if it is used, the condition is that XeCl (308 nm wavelength) is used for the entire surface, or the selective overlap of 90% or more of only the active element portion and the passive element portion. Scanning is preferred.

Next, as shown in FIG. 4 (12), contact windows are opened in the source / drain portions of all the TFTs of the peripheral drive circuit and the source portion of the display TFT by general-purpose photolithography and etching techniques. .

Then, a sputtered film of aluminum or aluminum alloy having a thickness of 500 to 600 nm, for example, aluminum or copper containing 1% Si or aluminum or copper containing 1 to 2% copper is formed on the entire surface, and the peripheral film is formed by general-purpose photolithography and etching techniques. The data lines and the gate lines are formed simultaneously with the formation of the source electrodes 26 of all the TFTs in the driving circuit and the display section and the drain electrodes 27 of the peripheral driving circuit section. Then, forming gas (N ₂ +
Sinter treatment in H ₂ ) at about 400 ° C./1 h.

Next, as shown in (13) of FIG. 4, an insulating film 36 made of a PSG film (about 300 nm thick) and a SiN film (about 300 nm thick) is formed by plasma CVD, high-density plasma CVD, catalytic CVD, or the like. Is formed on the entire surface.
Next, a contact window is opened in the drain portion of the display TFT. Note that SiO ₂ , PSG and SiN in the pixel portion are used.
The film does not need to be removed.

As a basic requirement of the reflection type liquid crystal display device, the function of reflecting and scattering the incident light must be provided inside the liquid crystal panel. This is because the direction of the observer with respect to the display is substantially determined, but the direction of the incident light cannot be uniquely determined.
For this reason, it is necessary to design a reflector assuming that a point light source exists in an arbitrary direction. Therefore, (1) in FIG.
As shown in 4), the entire surface is coated with a spin coat or the like to a thickness of 2 to 3 μm.
The photosensitive resin film 28 having a thickness of m is formed, and as shown in (15) of FIG. 5, a concavo-convex pattern for obtaining optimal reflection characteristics and viewing angle characteristics at least in the pixel portion by general-purpose photolithography and etching techniques. Is formed and reflowed to form a lower reflective surface made of the roughened uneven surface 28A.
At the same time, a resin window for contact of the drain portion of the display TFT is opened.

Next, as shown in FIG. 5 (16), aluminum or 1% Si
An aluminum film or the like other than the pixel portion is removed by a general-purpose photolithography and etching technique to form a sputtered film made of aluminum or the like, and a reflective portion 29 made of uneven aluminum or the like connected to the drain portion 19 of the display TFT is formed.
To form This is used as a pixel electrode for display. Then, about 300 ° C / 1h in forming gas
Sintering to make the contacts sufficient. Note that silver or a silver alloy may be used instead of the aluminum-based material in order to increase the reflectance.

As described above, the single-crystal silicon layer 7 is formed by the catalytic CVD method using the crystalline sapphire thin film 50 including the step 4 as a seed for low-temperature heteroepitaxial growth, and the display section using the single-crystal silicon layer 7 and Top gate type nMOSLD for each peripheral drive circuit
It is possible to manufacture an active matrix substrate 30 integrated with a display section and a peripheral drive circuit section in which a CMOS circuit including D-TFTs, pMOSTFTs, and nMOSTFTs is formed.

Next, using this active matrix substrate (drive substrate) 30, a reflective liquid crystal display (LCD)
6 will be described with reference to FIG. Hereinafter, this active matrix substrate is referred to as a TFT substrate.

When the liquid crystal cell of this LCD is fabricated by surface assembly (suitable for medium / large liquid crystal panels of 2 inch size or more), first, the TFT substrate 30 and the entire solid IT
A polyimide alignment film 3 is formed on an element forming surface of a counter substrate 32 provided with an O (Indium tin oxide) electrode 31.
3 and 34 are formed. This polyimide alignment film is formed to a thickness of 50 to 100 nm by roll coating, spin coating, or the like, and cured at 180 ° C. for 2 hours.

Next, the TFT substrate 30 and the counter substrate 32 are subjected to rubbing or optical alignment processing. Rubbing buff materials include cotton and rayon, but cotton is more stable in terms of buff residue (garbage) and retardation.
Photoalignment is a technique for aligning liquid crystal molecules by non-contact linearly polarized ultraviolet irradiation. In addition, the orientation other than rubbing,
A polymer alignment film can be formed by obliquely entering polarized light or non-polarized light (such a polymer compound includes, for example, a polymethyl methacrylate-based polymer having azobenzene).

Next, after cleaning, a common agent is applied to the TFT substrate 30 side, and a sealant is applied to the counter substrate 32 side.
Wash with water or IPA (isopropyl alcohol) to remove rubbing buff debris. Common agent is acrylic or epoxy acrylate containing conductive filler,
Alternatively, the sealant may be an acrylic adhesive, an epoxy acrylate, or an epoxy adhesive. Any of heat curing, ultraviolet irradiation curing, ultraviolet irradiation curing and heat curing can be used, but from the viewpoint of overlay accuracy and workability, the ultraviolet irradiation curing and heat curing type is preferable.

Next, spacers for obtaining a predetermined gap are sprayed on the counter substrate 32 side, and are superposed on the TFT substrate 30 at a predetermined position. After the alignment marks on the counter substrate 32 and the alignment marks on the TFT substrate 30 are accurately aligned, the sealant is temporarily cured by irradiating with ultraviolet light, and then heat-cured collectively.

Next, a scribe break is performed to
A single liquid crystal panel in which the substrate 30 and the counter substrate 32 are overlapped is created.

Next, the liquid crystal 35 is injected into the gap between the two substrates 30 and 32, and the injection port is sealed with an ultraviolet adhesive, followed by IPA cleaning. Any type of liquid crystal may be used. For example, a high-speed TN (twisted nematic) mode using a nematic liquid crystal is generally used.

Next, the liquid crystal 35 is oriented by heating and quenching.

Next, a flexible wiring is connected to the panel electrode take-out portion of the TFT substrate 30 by thermocompression bonding of an anisotropic conductive film, and a polarizing plate is bonded to the counter substrate 32.

Also, in the case of a single liquid crystal panel surface assembly (suitable for a small liquid crystal panel having a size of 2 inches or less), similarly to the above, the polyimide alignment 33, 34 are formed, and both substrates are subjected to rubbing or non-contact linear polarization ultraviolet light alignment treatment.

Next, the TFT substrate 30 and the opposing substrate 32 are divided into single pieces by dicing or scribe break, and washed with water or IPA. A common agent is applied to the TFT substrate 30, a sealing agent containing a spacer is applied to the counter substrate 32,
Lay both substrates together. Subsequent processes follow the above.

In the above-mentioned reflection type LCD, the opposing substrate 32 is a CF (color filter) substrate, and the color filter layer 46 is provided below the ITO electrode 31.
The incident light from the counter substrate 32 side is efficiently reflected by the reflection film 29 and emitted from the counter substrate 32 side.

On the other hand, as the TFT substrate 30, in addition to the above-described substrate structure as shown in FIG. 6, an on-chip color filter (OCCF) in which a color filter is provided on the TFT substrate 30.
When a TFT substrate having a structure is used, the counter substrate 32 has I
Solid TO electrode (or ITO with black mask)
The electrodes are solid).

[0104] In the case of incorporating an auxiliary capacitance C _S of FIG. 11 in the pixel unit, by connecting the dielectric layer provided on the substrate 1 described above (not shown) and the drain region 19 of monocrystalline silicon Good.

As described above, according to the present embodiment, the following remarkable functions and effects can be obtained.

(A) A crystalline sapphire thin film 50 is formed on a substrate 1 provided with a step 4 having a predetermined shape / dimension, and this is used as a seed for low-temperature heteroepitaxial growth (however, the heating temperature during growth is preferably 200 to 800 ° C., preferably Is 300-4
540 cm ²
Since the single crystal silicon thin film 7 having a high electron mobility of / v · sec or more can be obtained, it is possible to manufacture an LCD with a built-in high-performance driver. Since the step 4 promotes this epitaxial growth, a single crystal silicon thin film 7 having higher crystallinity can be obtained.

(B) This single-crystal silicon thin film exhibits higher electron and hole mobilities comparable to those of a single-crystal silicon substrate as compared with a conventional amorphous silicon thin film or polycrystalline silicon thin film. Gate type M
OSFT is an nMOS or pMOS or cMOS having an LDD structure with high switching characteristics and low leakage current.
TFT display part, cMOS and nMOS with high driving capability
Alternatively, a configuration in which a peripheral drive circuit portion made of pMOSTFT or a mixture of them is integrated becomes possible, and a display panel with high image quality, high definition, a narrow frame, a large screen, and high efficiency is realized.
Since the single crystal silicon thin film 7 has a sufficiently high hole mobility, a peripheral drive circuit for driving electrons and holes individually or in combination of both can be manufactured.
A panel integrated with a display TFT having an LDD structure of MOS, pMOS, or cMOS can be realized. Also, small ~
In the case of a medium-sized panel, there is a possibility that one of a pair of peripheral vertical drive circuits can be omitted.

(C) Since the heat treatment temperature during the above-mentioned silicon epitaxial growth can be 800 ° C. or less, a relatively low temperature (for example, 200 to 60
(0 ° C. or less), the single crystal silicon film 7 can be formed uniformly. In addition, as the substrate, a substrate material having a low strain point, low cost, and good physical properties, such as quartz glass, crystallized glass, a ceramic substrate, and borosilicate glass (and further, a heat-resistant organic substrate) is used. It can be arbitrarily selected, and the size of the substrate can be increased.

(D) Since long-time annealing at an intermediate temperature and excimer laser annealing as in the case of the solid phase growth method are not required, productivity is high, costly manufacturing equipment is not required, and cost can be reduced. .

(E) In this heteroepitaxial growth, the crystallinity of the crystalline sapphire thin film and the like, the conditions such as the gas composition ratio of catalytic CVD, the shape of the step, the substrate heating temperature, the N-type or P-type carrier impurity concentration to be added, etc. By adjustment,
Since a single-crystal silicon thin film having a wide range of conductivity type such as N-type or P-type and high mobility can be easily obtained, Vth (threshold)
Adjustment is easy, and high-speed operation by low resistance is possible.

(F) If a color filter is formed on the display array unit, cost reduction can be realized by improving the aperture ratio and luminance of the display panel, omitting the color filter substrate, improving productivity, and the like.

(G) Since the material layer such as a crystalline sapphire thin film serves as a diffusion barrier for various atoms, diffusion of impurities from the glass substrate can be suppressed.

<Second Embodiment> A second embodiment of the present invention will be described with reference to FIGS.

The present embodiment has a similar top gate type MOSTFT in the display section and the peripheral drive circuit section as compared with the above-described first embodiment, but is different from the above-described first embodiment. And a transmissive LCD. That is, although the steps from (1) in FIG. 1 to the step shown in (13) in FIG. 4 are the same, after that step, as shown in (14) in FIG. At the same time as opening a window 19 for contacting the drain portion, SiO ₂ , PSG and Si which do not require a pixel opening to improve transmittance are provided.
The N film is removed.

Next, as shown in (15) of FIG.
A photosensitive acrylic transparent resin flattening film 28B having a thickness of 2 to 3 μm is formed on the entire surface by spin coating or the like, and a window is opened in the transparent resin 28B on the drain side of the display TFT by general-purpose photolithography. Let it cure.

Next, as shown in (16) of FIG.
An ITO sputtered film having a thickness of 130 to 150 nm is formed on the entire surface, and is contacted with the drain portion 19 of the display TFT by general-purpose photolithography and etching technology.
The TO transparent electrode 41 is formed. Then, by heat treatment (200 to 250 ° C./1 h in a forming gas), the contact resistance between the drain of the display TFT and the ITO is reduced and the transparency of the ITO is improved.

Then, as shown in FIG.
2, and a transmissive LCD is assembled in the same manner as in the first embodiment. However, a polarizing plate is also attached to the TFT substrate side. In this transmissive LCD, transmitted light can be obtained as shown by the solid line, but the opposing substrate 3 can be obtained as shown by the dashed line.
It is also possible to obtain transmitted light from two sides.

In the case of this transmission type LCD, an on-chip color filter (OCCF) structure and an on-chip black (OCB) structure can be manufactured as follows.

[0119] That is, steps up in FIG. 1 (1) of to 4 (12) is carried out according to the above process, but then, as shown in (13) in FIG. 15, insulating the PSG / SiO ₂ Membrane 25
The drain portion is also opened as a window to form an aluminum buried layer 41A for a drain electrode, and then an insulating film 36 of SiN / PSG is formed.

Next, as shown in (14) of FIG.
After forming a photoresist 61 having a predetermined thickness (1 to 1.5 μm) in which each color of R, G, and B is pigment-dispersed for each segment, as shown in (15) of FIG. Each of the color filter layers 61 (R), 61 (G), is patterned by leaving only predetermined positions (each pixel portion).
61 (B) is formed (on-chip color filter structure). At this time, the window of the drain part is also opened. In addition, an opaque ceramic substrate, glass with low transmittance, and a heat-resistant resin substrate cannot be used.

Next, as shown in (15) of FIG.
In a contact hole communicating with the drain of the display TFT, a light shielding layer 43 serving as a black mask layer is formed by metal patterning over the color filter layer. For example, molybdenum is sputtered by 200 to 250 n.
An m-thick film is formed and patterned into a predetermined shape that covers the display TFT and shields light (on-chip black structure).

Next, as shown in FIG. 15 (16),
A flattening film 28B made of a transparent resin is formed, and an ITO transparent electrode 41 is further formed in a through hole provided in the flattening film by a light shielding layer 4.
3 is formed.

As described above, by forming the color filter 61 and the black mask 43 on the display array section, the aperture ratio of the liquid crystal display panel can be improved, and the power consumption of the display module including the backlight can be reduced. Realize.

<Third Embodiment> FIGS. 16 to 24 show
9 shows a third embodiment of the present invention.

In this embodiment, the peripheral drive circuit section is a top gate type pMO similar to that of the above-described first embodiment.
It is composed of a CMOS drive circuit composed of an STFT and an nMOSTFT. The display section is of a reflection type, but has various combinations of TFTs having various gate structures.

That is, FIG. 16A shows a top gate type nMOS LDD-T similar to that of the first embodiment.
Although an FT is provided in the display portion, the display portion shown in FIG. 16B has a bottom-gate type nMOS LDD-TFT,
The display section shown in FIG. 6C has a dual gate type nMOS.
LDD-TFTs are provided. Both of these bottom gate type and dual gate type MOS TFTs
As will be described later, the top gate type MOS of the peripheral drive circuit section
Although it can be manufactured in the same process as the TFT, especially in the case of the dual gate type, the driving capability is improved by the upper and lower gate portions, suitable for high-speed switching, and by selectively using either the upper or lower gate portion. Depending on the case, it can be operated as a top gate type or a bottom gate type.

The bottom gate type MO shown in FIG.
In the STFT, reference numeral 71 in the figure denotes a gate electrode of Mo / Ta, etc., reference numeral 72 denotes a SiN film and reference numeral 73 denotes a SiO ₂ film, which forms a gate insulating film. On this gate insulating film, a top gate type MOS TFT is formed. A channel region and the like using a similar single crystal silicon layer are formed. FIG.
In the dual gate type MOSTFT of FIG. 6C, the lower gate portion is the same as the bottom gate type MOSTFT, but the upper gate portion has a gate insulating film 73 formed of a SiO ₂ film and a SiN film, and an upper gate portion formed thereon. An electrode 74 is provided. However, in each case, each gate portion is formed outside the step 4 which acts as a seed during heteroepitaxial growth and at the same time promotes the growth of the single crystal silicon film and has an effect of increasing the crystallinity.

Next, the above bottom gate type MOSTFT
17 to 21 and a method for manufacturing the above-described dual gate type MOSTFT will be described with reference to FIGS. 22 to 24, respectively. In addition, the top gate type MO of the peripheral drive circuit section
Since the method of manufacturing the STFT is the same as that described with reference to FIGS. 1 to 5, illustration is omitted here.

In the display section, a bottom gate type MOST
To manufacture the FT, first, as shown in FIG. 17A, a molybdenum / tantalum (Mo.Ta)
An alloy sputtered film 71 (500 to 600 nm thick) is formed.

Next, as shown in FIG. 17B, a photoresist 70 is formed in a predetermined pattern, and using this as a mask, the Mo.Ta film 9 is taper-etched to form a side edge 7.
1a forms a trapezoidal gate electrode 71 that is gently inclined at 20 to 45 degrees.

Next, as shown in FIG. 17C, after removing the photoresist 71, the substrate 1 including the molybdenum-tantalum alloy film 71 is formed on the substrate 1 by a plasma CVD method or the like.
SiN film (about 100 nm thick) 72 and SiO ₂ film (about 20 nm thick)
(Thickness of 0 nm) 73 is formed in this order to form a gate insulating film.

Next, as shown in (4) of FIG. 18, in the same step as (1) of FIG. 1, a photoresist 2 is formed in a predetermined pattern at least in a TFT formation region, and this is used as a mask. Similarly, a plurality of steps 4 are formed in the gate insulating film on the substrate 1 (and also on the substrate 1) in appropriate shapes and dimensions. The step 4 serves as a seed for heteroepitaxial growth of single-crystal silicon, which will be described later, and has the function of promoting the growth of the single-crystal silicon film and increasing its crystallinity, and has a depth d = 0.3. ~ 0.
4 μm, width w = 2 to 3 μm, length (vertical direction in the drawing) = 1
The angle between the base and the side surface (base angle) may be a right angle.

Next, as shown in FIG. 18 (5), after removing the photoresist 2, in the same step as FIG. 1 (2), a step 4 is formed on one main surface of the insulating substrate 1 in the same manner as described above. A crystalline sapphire thin film (thickness: 20 to 200 nm) 50 is formed in at least a TFT formation region including

Next, as shown in FIG.
In the same step as (3) above, the catalyst C
Single crystal silicon is heteroepitaxially grown by the VD method, and is deposited as a single crystal silicon layer 7 having a thickness of, for example, about 0.1 μm. At this time, the side edge 71a of the underlying gate electrode 71 has a gentle slope, so that the single-crystal silicon layer 7 grows on this surface without interrupting the epitaxial growth due to the step 4. Will do.

Next, as shown in FIG. 18 (7), after the steps of FIG. 1 (4) to FIG. 2 (6), in the same step as FIG. Is covered with the photoresist 13 and the exposed n
Phosphorus ions 14 in the source / drain region of the MOSTFT
The doped (ion implantation), N ^- consists -type layer L
The DD section 15 is formed in a self-aligned manner. At this time, the surface height difference (or pattern) can be easily recognized by the presence of the bottom gate electrode 71, the photoresist 13 can be easily positioned (mask-aligned), and alignment deviation hardly occurs.

Next, as shown in FIG.
In the same step as (8), the gate portion and the LDD portion of the nMOSTFT are covered with the photoresist 16 and the exposed region is doped (ion-implanted) with phosphorus or arsenic ion 17 to form the n ⁺ type layer of the nMOSTFT. A source part 18 and a drain part 19 are formed.

Next, as shown in FIG. 19 (9), in the same step as FIG. 3 (9), the entire nMOS TFT is covered with the photoresist 20, and boron ions 21 are doped (ion-implanted) to form a peripheral region. PMO of drive circuit
The source part and the drain part of the P ⁺ layer of the STFT are formed.

Next, as shown in (10) of FIG.
In the same step as (10) in FIG. 3, a photoresist 24 is provided to make the active element portion and the passive element portion into islands, and the single crystal silicon thin film layer is selectively removed by general-purpose photolithography and etching techniques.

Next, as shown in FIG. 19 (11),
In the same step as (11) in FIG.
SiO by high-density plasma CVD, catalytic CVD, etc.
_{A second} film 53 (about 300 nm thick) and a phosphosilicate glass (PSG) film 54 (about 300 nm thick) are formed on the entire surface in this order. The SiO ₂ film 53 and the PSG film 54 correspond to the above-described protective film 25. Then, in this state, the single crystal silicon film is activated in the same manner as described above.

Next, as shown in FIG. 20 (12),
In the same step as (12) in FIG. 4, a contact window is opened in the source portion by general-purpose photolithography and etching technology. And 400 to 500 nm on the entire surface
A thick aluminum sputtered film is formed, and a data line and a gate line are formed simultaneously with the source electrode 26 of the TFT by general-purpose photolithography and etching techniques. Thereafter, sintering is performed in a forming gas at about 400 ° C. for 1 hour.

Next, as shown in (13) of FIG.
In the same step as (13) in FIG.
PSD film (about 300 nm) by VD, catalytic CVD, etc.
Thickness) and an insulating film 3 composed of a SiN film (about 300 nm thick)
6 is formed on the entire surface, and a contact window is opened in the drain of the display TFT.

Next, as shown in FIG.
In the same step as (14) in FIG. 5, a photosensitive resin film 28 having a thickness of 2 to 3 μm is formed by spin coating or the like, and as shown in (15) in FIG. A concave-convex pattern that obtains optimum reflection characteristics and viewing angle characteristics is formed in the portion, and reflow is performed to form a lower reflective surface including the concave-convex rough surface 28A. At the same time, a resin window for contact of the drain portion of the display TFT is opened.

Next, as shown in (15) of FIG.
In the same step as (15) in FIG.
A sputtered film of aluminum or the like having a thickness of 00 nm is formed, and an aluminum reflecting portion 29 having an uneven shape connected to the drain portion 19 of the display TFT is formed by general-purpose photolithography and etching technology.

As described above, the bottom gate type nMOS LDD is formed on the display portion using the single crystal silicon layer 7 formed by the catalytic CVD method using the crystalline sapphire thin film 50 and the step 4 as seeds for low-temperature heteroepitaxial growth.
-TFT (pMOSTFT and nMOSTF in the periphery)
A display-peripheral drive circuit unit-integrated active matrix substrate 30 incorporating a T-type CMOS drive circuit) can be manufactured.

FIG. 21 shows an example in which the gate insulating film of the above-mentioned bottom gate type MOSTFT provided in the display portion is formed by an anodic oxidation method of Mo · Ta.

That is, after the step (2) in FIG.
As shown in (3), the molybdenum-tantalum alloy film 71
Is subjected to a known anodic oxidation treatment so that T
a ₂ O ₅ gate insulating film 74 of 100 to 200 n
m thickness.

In the subsequent steps, as shown in FIG. 21 (4), steps 4 and a crystalline sapphire thin film 50 are formed in the same manner as in the steps (4) to (6) in FIG. Catalyst C
After the single crystal silicon film 7 is heteroepitaxially grown by the VD method, an active matrix substrate 30 is formed as shown in FIG. 21 (5) in the same manner as in the steps of FIGS. 18 (7) to 20 (15). I do.

Next, in order to manufacture a dual gate type MOSTFT in the display section, first, FIG.
Steps up to (6) in FIG. 18 are performed in the same manner as described above.

That is, as shown in FIG. 22 (7), a step 4 is formed on the insulating films 72 and 73 and the substrate 1, and a single-crystal silicon layer 7 is formed using the crystalline sapphire thin film 50 and the step 4 as seeds. Hetero-epitaxial growth. Then, in the same step as (5) in FIG. 2, an SiO ₂ film (about 200 nm thick) and a SiN film (about 100 nm thick) are formed on the entire surface of the single crystal silicon thin film 7 by plasma CVD, catalytic CVD, or the like.
Insulating film 80 (this corresponds to the above-mentioned insulating film 8) is formed successively in this order to form a sputtered film 81 of Mo.Ta alloy (500-600 nm thick) (this is the above-mentioned sputtered film). (Corresponding to the film 9).

Next, as shown in (8) of FIG. 22, in the same step as (6) of FIG. 2, a photoresist pattern 10 is formed, and Mo / Ta is continuously etched.
An alloy top gate electrode 82 (which corresponds to the above-described gate electrode 12) and a gate insulating film 83 (which corresponds to the above-described gate insulating film 11) are formed to expose the single crystal silicon thin film layer 7.

Next, as shown in FIG. 22 (9), in the same step as FIG. 2 (7), the top gate portion of the nMOSTFT is covered with the photoresist 13, and the source / drain of the exposed nMOSTFT for display is exposed. The region is doped with phosphorus ions 14 (ion implantation) to form an LDD portion 15 of an N ⁻ -type layer.

Next, as shown in FIG. 22 (10), in the same step as FIG. 3 (8), the gate portion and the LDD portion of the nMOS TFT are covered with the photoresist 16 and the exposed region is doped with phosphorus or arsenic ions 17. (Ion implantation) to form a source portion 18 and a drain portion 19 made of an N ⁺ -type layer of the nMOS TFT.

Next, as shown in FIG. 23 (11),
In the same step as (9) in FIG. 3, the gate portion of the pMOSTFT is covered with the photoresist 20, and the exposed region is doped with boron ions 21 (ion implantation), and the source of the P ⁺ layer of the pMOSTFT in the peripheral drive circuit portion is formed. And a drain part are formed.

Next, as shown in FIG. 23 (12),
In the same step as (10) in FIG. 3, a photoresist 24 is provided to make the active element portion and the passive element portion into islands, and the single crystal silicon thin film layer other than the active element portion and the passive element portion is subjected to general-purpose photolithography and etching. Selective removal with technology.

Next, as shown in FIG. 23 (13),
In the same step as (11) in FIG.
SiO by high-density plasma CVD, catalytic CVD, etc.
_{A 2} film 53 (about 200 nm thick) and a phosphosilicate glass (PSG) film 54 (about 300 nm thick) are formed on the entire surface. These films 53 and 54 correspond to the protective film 25 described above. Then, the single crystal silicon layer 7 is activated.

Next, as shown in (14) of FIG.
In the same step as (12) in FIG. 4, a contact window is opened in the source section. And 400-500n on the whole surface
A m-thick aluminum sputtered film is formed, and the source electrode 2 is formed by general-purpose photolithography and etching techniques.
At the same time as forming 6, a data line and a gate line are formed.

Next, as shown in (15) of FIG.
In the same step as (13) in FIG.
Thickness) and an insulating film 3 composed of a SiN film (about 300 nm thick)
6 is formed on the entire surface, and a contact window is opened in the drain of the display TFT.

Next, as shown in (16) of FIG.
A photosensitive resin film 28 having a thickness of 2 to 3 μm is formed on the entire surface by spin coating or the like, and as shown in FIG.
In the same manner as in the steps (15) and (16), the lower part of the reflecting surface composed of the roughened surface 28A is formed at least in the pixel portion, and at the same time, the resin window for contact of the drain portion of the display TFT is opened to further display A reflection portion 29 made of aluminum or the like having an uneven shape for obtaining optimum reflection characteristics and viewing angle characteristics is connected to the drain portion 19 of the TFT for use.

As described above, the single-crystal silicon layer 7 formed by using the crystalline sapphire thin film 50 and the step 4 as seeds for heteroepitaxial growth by the catalytic CVD method.
And a dual gate type nMOSLDDT for the display unit
FT is replaced with pMOSTFT and nMOS in the peripheral drive circuit section.
Display unit incorporating a CMOS drive circuit composed of TFTs
Active matrix substrate 30 integrated with peripheral drive circuit section
Can be produced.

<Fourth Embodiment> FIGS. 25 to 30 show
9 shows a fourth embodiment of the present invention.

In this embodiment, unlike the above-described embodiments, the gate electrode of the top gate portion is formed of a material having relatively low heat resistance such as aluminum.

First, when a top gate type MOSTFT is provided for both the display portion and the peripheral drive circuit portion, the steps (1) to (4) of FIG. 1 in the first embodiment are performed in the same manner. Then, as shown in FIG. 25 (4), an N-type well 7A is formed in the pMOSTFT portion of the peripheral drive circuit portion.

Next, as shown in (5) of FIG. 25, all of the nMOS and pMOSTFT in the peripheral driving region and the gate portion of the nMOSTFT in the display region are connected to the photoresist 13.
And cover the exposed source / drain regions of the nMOS TFT with phosphorus ions 14 at 5 × 10 ¹³ at, for example, 20 kV.
By doping (ion implantation) at a dose of atoms / cm ^2, the LDD portion 15 made of an N ⁻ -type layer is formed in a self-aligned manner.

Next, as shown in FIG. 26 (6), all the pMOS TFTs in the peripheral drive region and n in the peripheral drive region
Gate portion of MOSTFT and nMOSTFT in display area
Is covered with a photoresist 16 and phosphorus or arsenic ions 17 are exposed to the
By doping (ion implantation) at 0 kV and a dose of 5 × 10 ¹⁵ atoms / cm ² , the source 18 and the drain 19 and the LDD 15 made of the N ⁺ type layer of the nMOS TFT are formed. In this case, if the resist 13 is left like an imaginary line, and the resist 16 is provided so as to cover the resist 13, the mask 13 can be used as a guide for the mask alignment at the time of forming the resist 16, the mask alignment can be facilitated, and the misalignment can be achieved. Is also reduced.

Next, as shown in FIG. 26 (7), the nMOSTFT in the peripheral drive region and the nMOSTT in the display region are used.
The entire FT and the gate portion of the pMOSTFT are covered with a photoresist 20, and the exposed region is doped with boron ions 21 at, for example, 10 kV at a dose of 5 × 10 ¹⁵ atoms / cm ² , thereby ion-implanting the P ^{+ of the} pMOSTFT. The source part 22 and the drain part 23 of the layer are formed.

Next, after removing the resist 20, FIG.
As shown in (8), the single crystal silicon layers 7 and 7A are activated in the same manner as described above, and a gate insulating film 12 and a gate electrode material (aluminum or aluminum containing 1% Si or the like) 11 are further provided on the surfaces. Form. Gate electrode material layer 1
1 can be formed by a vacuum evaporation method or a sputtering method.

[0167] Then, in the same manner as described above, after patterning the gate portion, an island of the active element portion and the passive element, as further shown in (9) in FIG. 27, SiO ₂
Film (about 200 nm thick) and phosphor silicate glass (PS
G) A protective film 25 is formed by continuously forming a film (thickness of about 300 nm) on the entire surface in this order.

Next, as shown in (10) of FIG.
By general-purpose photolithography and etching technology, contact windows are opened in the source / drain portions of all the TFTs of the peripheral drive circuit and the source portions of the display TFT.

Then, a sputtering film of aluminum or aluminum containing 1% Si having a thickness of 500 to 600 nm is formed on the entire surface, and the peripheral drive circuit and the source electrodes 26 of all TFTs in the display section are formed by general-purpose photolithography and etching technology. A data line and a gate line are formed at the same time as the formation of the drain electrode 27 of the peripheral driving circuit. After that, forming gas (N ₂ + H ₂ )
Sintering is performed at about 400 ° C. for 1 hour.

Next, (13) in FIG. 4 to (16) in FIG.
A top gate type nMOS LDD-TFT, pMOSTFT, and nMOS having a gate electrode of aluminum or aluminum containing 1% Si, respectively, for a display unit using a single crystal silicon layer 7 and a peripheral driving circuit unit in the same manner as described above.
Active matrix substrate 3 with integrated display section-peripheral drive circuit section incorporating CMOS drive circuit composed of TFTs
0 can be produced.

In this embodiment, since the gate electrode 11 made of aluminum or aluminum containing 1% Si is formed after the activation process of the single crystal silicon layer 7, the influence of the heat during the activation process is reduced. Since it has no relation to the heat resistance of the material, the heat resistance of the top gate electrode material is relatively low, and even low-cost aluminum or aluminum containing 1% Si can be used. This is because the display unit has a bottom gate type MOSTF
The same applies to the case of T.

Next, a dual gate type MOST is provided in the display section.
In the case where the FT and the peripheral drive circuit are provided with a top gate type MOSTFT, in the case of FIG.
The steps from (1) of FIG. 7 to (6) of FIG. 18 are performed in the same manner, and as shown in (6) of FIG.
An N-type well 7A is formed in the MOSTFT portion.

Next, as shown in (7) of FIG. 28, the LDD part 15 is formed by doping the TFT part of the display part with phosphorus ions 14 in the same manner as (5) of FIG.

[0174] Then, as shown in (8) in FIG. 29, N ⁺ -type source region 18 and doped with phosphorus ions 17 to nMOSTFT portion of the display unit in the same manner as (6) in FIG. 26 and the peripheral driving circuit portion Drain regions 19 are respectively formed.

Then, as shown in (9) of FIG. 29, the pMOST of the peripheral drive circuit section is formed in the same manner as (7) of FIG.
The FT portion is doped with boron ions 21 to form P ⁺ type source region 22 and drain region 23, respectively.

Next, after removing the resist 20, FIG.
After patterning the single crystal silicon layer 7 to make the active element portion and the passive element portion into islands as shown in (10), the single crystal silicon layers 7 and 7A are formed as shown in (11) in FIG. An activation process is performed in the same manner as described above. Further, a gate insulating film 80 is formed on the surface of the display unit, and a gate insulating film 12 is formed on the surface of the peripheral driver circuit unit.

Next, as shown in (12) of FIG.
By patterning aluminum formed on the entire surface by a sputtering method, each upper gate electrode 83 of the display section and each gate electrode 11 of the peripheral drive circuit section are formed.

Next, as shown in FIG. 30 (13),
An SiO ₂ film (about 200 nm thick) and a phosphosilicate glass (PSG) film (about 300 nm thick) are successively formed on the entire surface in this order to form a protective film 25.

Next, in the same manner as described above, the source electrodes 26 of all the TFTs of the peripheral drive circuit and the display section and the drain electrode 27 of the peripheral drive circuit section are formed, and the display section and the single crystal silicon layer 7 are formed. Dual gate type nMOS LDD-TFT, pMOSTFT, and nM
The display-peripheral drive circuit unit integrated type active matrix substrate 30 in which the CMOS drive circuit composed of the OSTFT is built can be manufactured.

Also in the present embodiment, after the activation treatment of single crystal silicon layer 7, gate electrodes 11, 83 of aluminum or the like are formed.
Since the effect of heat during the activation process is independent of the heat resistance of the gate electrode material, the heat resistance of the top gate electrode material is relatively low, and even low-cost aluminum can be used. Thus, the range of choice of the electrode material is expanded. The source electrode 26 (and also the drain electrode) can be formed at the same time in the step (11) of FIG. 30, but in this case, there is an advantage in the manufacturing method.

In any of the above embodiments, for example, a bottom gate type or top gate type MOS
When a TFT is manufactured, as shown in FIG. 31A, when a step 4 is provided, the single crystal silicon film 7 grown thereon is thin, so that the step is disconnected (poor connection) or thinned (increased resistance). 3) may occur, so that the connection with the source electrode 26 (or the drain electrode) must be performed in order to ensure the connection with the source electrode 26 (or the drain electrode).
As shown in FIGS. 1 (B) and 1 (C), it is desirable that the electrode be deposited on a region including the step 4.

In the step (5) of FIG. 25 or the step (7) of FIG. 28, after the formation of the top gate insulating film on the single crystal silicon layer 7, ion implantation and activation are performed.
Thereafter, the top gate electrode, the source, and the drain electrode may be simultaneously formed of aluminum.

In addition, as shown in FIG. 32A, the step 4 is formed on the substrate 1 in the above example (and furthermore, the S
For example, as shown in FIG. 32B, a crystalline sapphire thin film 50 on the substrate 1 (which has a function of stopping diffusion of ions from the glass substrate 1) is formed. You can also. The gate insulating films 72 and 73 described above may be provided instead of the crystalline sapphire thin film 50 or under the crystalline sapphire film, and the step 4 may be formed thereon. FIGS. 32C, 32D, and 32E illustrate examples in which the steps 4 are provided in the crystalline sapphire thin film 50.

<Fifth Embodiment> FIGS. 33 to 35 show
13 shows a fifth embodiment of the present invention.

In this embodiment, various examples in which each TFT is formed outside the above-described step 4 (ie, on the substrate 1 other than the step) will be described. The single crystal silicon layer 7 and the gate /
The source / drain electrodes 26 and 27 are schematically illustrated.

First, FIG. 33 shows a top gate type TFT. FIG. 33 (a) shows that a recess 4 due to a step is formed on one side of the source along the source region, and single crystal silicon is formed on the flat surface of the substrate other than the recess. A gate insulating film 12 and a gate electrode 11 are formed on the layer 7. Similarly, (b) shows an example in which the recess 4 due to the step is formed in an L-shaped pattern over two sides along the channel length direction up to the end of the drain region as well as the source region, and (c) shows the same recess 4 An example in which a rectangular shape is formed over four sides so as to surround a TFT active region is shown. (D) is an example in which the same concave portion 4 is formed over three sides, and (e) is an example in which the same concave portion 4 is formed in an L-shaped pattern over two sides. Recess 4-
It is not continuous between four.

As described above, since the recesses 4 of various patterns can be formed and the TFT is provided on the flat surface other than the recesses 4, the TFT can be easily manufactured.

FIG. 34 shows the case of a bottom gate type MOSTFT, but steps (or recesses) 4 of various patterns shown in FIG. 33 can be formed in the same manner. That is, FIG.
FIG. 4A shows an example corresponding to FIG. 33A, in which a bottom gate type MOSTFT is formed on a flat surface other than the recess 4 due to a step. Similarly, FIG. 34B shows FIG.
FIG. 34C shows an example corresponding to FIGS. 33C and 33D. FIG. 34D shows a case where the step 4 is provided in the crystalline sapphire thin film 50.

FIG. 35 shows a dual gate type MOSTFT.
In this case, the steps (or recesses) 4 of the various patterns shown in FIG. 33 can be formed in the same manner. For example, on the flat surface in the area inside the steps 4 shown in FIG. A dual-gate MOSTFT can be manufactured.

<Sixth Embodiment> FIGS. 36 to 38 show the sixth embodiment.
14 shows a sixth embodiment of the present invention.

FIG. 36 shows an example of a T-aligned LDD structure.
The present invention relates to an FT, for example, a double gate type MOSTFT in which a plurality of top gate type LDD-TFTs are connected.

According to this, the gate electrode 11 is branched into two, one of which is used as the first gate and the first LDD-TF.
A second LDD-TF for T and the other as a second gate
Used for T (however, an N ⁺ -type region 100 is provided between gate electrodes at the center of the single crystal silicon layer to reduce resistance). In this case, a different voltage may be applied to each gate, and even if one gate becomes inoperable for some reason, carriers can be moved between the source and the drain by using the remaining gates. Thus, a highly reliable device can be provided. Further, since the first LDD-TFT and the second LDD-TFT are connected in series to form a thin film transistor for driving each pixel, the source of each thin film transistor is turned off when it is off. The voltage applied between the drains can be greatly reduced. Therefore, the leakage current flowing during the off state can be reduced, and the contrast and the image quality of the liquid crystal display can be improved satisfactorily. Further, since the two LDD transistors are connected using only the same semiconductor layer as the low-concentration drain region in the LDD transistor, the connection distance between the transistors can be shortened,
Even if two D transistors are connected, the required area can be prevented from increasing. In addition, the above-mentioned first and second
Can be completely separated from each other and operated independently.

FIG. 37 shows an example of a bottom gate type MOSTF.
T has a double-gate structure (A) and dual-gate MOSTFT has a double-gate structure (B).

These double-gate MOSTFTs also
It has the same advantages as the above-mentioned top gate type. Among them, the dual gate type has the further advantage that one of the upper and lower gate portions can be used even if one of the upper and lower gate portions becomes inoperable.

FIG. 38 shows each of the above-mentioned double gate type MOs.
FIG. 2 shows an equivalent circuit diagram of an STFT. In the above description, the gate is branched into two, but the gate may be branched or divided into three or more. In these double-gate or multi-gate structures, two
The gate electrode may have the above-mentioned branched gate electrode of the same potential, or may have a divided gate electrode of a different potential or the same potential.

<Seventh Embodiment> FIG. 39 shows a seventh embodiment of the present invention.
In the dual gate type TFT described above, one of the upper and lower gates operates as a transistor, while the other gate operates as follows.

That is, FIG. 39A shows that in the nMOS TFT, an arbitrary negative voltage is always applied to the gate electrode on the top gate side to reduce the leakage current in the back channel. The case where the top gate electrode is opened is when the device is used as a bottom gate type. Also,
In FIG. 39B, an arbitrary negative voltage is always applied to the gate electrode on the bottom gate side to reduce the leakage current of the back channel. Also in this case, when the bottom gate electrode is opened, it can be used as a top gate type. In the case of a pMOSTFT, if an arbitrary positive voltage is always applied to the gate electrode, the leakage current of the back channel can be reduced.

In either case, the interface between the single crystal silicon layer 7 and the insulating film has poor crystallinity and a leak current easily flows, but the leak current can be cut off by applying a negative voltage to the electrode as described above. This is advantageous in combination with the effect of the LDD structure. In addition, a leak current may flow due to light incident from the glass substrate 1 side. However, since the light is blocked by the bottom gate electrode, the leak current can be reduced.

<Eighth Embodiment> FIGS. 40 to 45 show
14 shows an eighth embodiment of the present invention.

In this embodiment, the above-described material layer (for example, a crystalline sapphire film) is formed on a flat surface of the substrate without providing the steps (recesses) as described above on the substrate, and this material layer is used as a seed. The present invention relates to an active matrix reflective liquid crystal display (LCD) in which a single-crystal silicon layer is heteroepitaxially grown by a catalytic CVD method, and a top gate type MOSTFT is formed using the single-crystal silicon layer.

The active matrix reflective LCD according to the present embodiment will be described with reference to FIGS. 40 to 44, the left side of each drawing shows the manufacturing process of the display unit, and the right side shows the manufacturing process of the peripheral drive circuit unit.

First, as shown in (1) of FIG. 40, on one main surface of an insulating substrate 1 such as borosilicate glass, quartz glass, or transparent crystallized glass, a crystalline sapphire thin film is formed at least in a TFT forming region. (Thickness 20 to 200 nm)
Form 50. The crystalline sapphire thin film 50 is formed by a high-density plasma CVD method or a catalytic CVD method (Japanese Patent Laid-Open No.
For example, trimethylaluminum gas is oxidized with an oxidizing gas (oxygen / moisture) and crystallized. A high heat-resistant glass substrate (8 to 12 inches φ, 700 to 800 μm thick) can be used as the insulating substrate 1.

Next, as shown in (2) of FIG. 40, similarly to (3) of FIG.
800 ° C.), the single-crystal silicon film 7
Heteroepitaxial growth is performed to a thickness of 0.005 μm (for example, 0.1 μm). When the substrate 1 is borosilicate glass, the substrate temperature is 200 to 600 ° C., and when the substrate 1 is a quartz glass, crystallized glass, or ceramic substrate, the substrate temperature is 60 ° C.
0 to 800 ° C.

In the single crystal silicon layer 7 deposited as described above, for example, the (100) plane is heteroepitaxially grown on the substrate in order for the crystalline sapphire film 50 to show good lattice matching with the single crystal silicon.

After the single-crystal silicon layer 7 is deposited on the substrate 1 by the catalytic CVD method and heteroepitaxial growth, a top-gate type MOS TFT using the single-crystal silicon layer 7 as a channel region in the same manner as described above.
Is made.

First, a specific resistance is adjusted by doping a suitable amount of a P-type carrier impurity, for example, boron ion, over the entire surface of the single crystal silicon thin film 7 formed by the epitaxial growth. Further, only the pMOSTFT formation region is selectively doped with an N-type carrier impurity to form an N-type well. For example, a p-channel TFT portion is masked with a photoresist (not shown), and P-type impurity ions (for example, B
⁺ ) Is doped at 10 kV with a dose of 2.7 × 10 ¹¹ atoms / cm ² to adjust the specific resistance. Further, as shown in (3) of FIG. 40, in order to control the impurity concentration in the pMOSTFT formation region, the nMOSTFT portion is masked with a photoresist 60, and N-type impurity ions (for example, P ⁺ ) are used.
65 is doped at 10 kV at a dose of 1 × 10 ¹¹ atoms / cm ² to form an N-type well 7A.

Next, as shown in FIG. 41D, SiO ₂ (about 2 μm) is formed on the entire surface of the single crystal silicon thin film layer 7 by plasma CVD, high-density plasma CVD, catalytic CVD, or the like.
00 nm) and SiN (approximately 100 nm thick) in this order to form a gate insulating film 8 and a molybdenum-tantalum (Mo.Ta) alloy sputtered film 9 (500
厚 600 nm thick).

Next, as shown in FIG. 41 (5), the TFT in the display area is formed by a general-purpose photolithography technique.
Pattern is formed in each step region (in the concave portion) of the TFT portion and the TFT portion of the peripheral drive region, and the gate electrode 11 of the (Mo.Ta) alloy and the gate insulating film (SiN / SiO ₂ ) 12 to expose the single crystal silicon thin film layer 7. (Mo
・ Ta) alloy film 9 is an acid-based etching solution, SiN is CF ₄
Gas plasma etching and SiO ₂ are treated with a hydrofluoric acid-based etchant.

Next, as shown in (6) of FIG. 41, all of the nMOS and pMOSTFT in the peripheral driving region and the gate portion of the nMOSTFT in the display region are formed by the photoresist 13
And cover the exposed source / drain regions of the nMOS TFT with phosphorus ions 14 at 5 × 10 ¹³ at, for example, 20 kV.
By doping (ion implantation) at a dose of atoms / cm ^2, the LDD portion 15 made of an N ⁻ -type layer is formed in a self-aligned manner (self-aligned).

Next, as shown in (7) of FIG. 42, all of the pMOS TFTs in the peripheral drive region and n in the peripheral drive region
Gate portion of MOSTFT and nMOSTFT in display area
Is covered with a photoresist 16 and phosphorus or arsenic ions 17 are exposed to the
By doping (ion implantation) at 0 kV and a dose of 5 × 10 ¹⁵ atoms / cm ² , the source 18 and the drain 19 and the LDD 15 made of the N ⁺ type layer of the nMOS TFT are formed.

Next, as shown in FIG. 42 (8), the nMOSTFT in the peripheral drive region and the nMOSTT in the display region are used.
The entire FT and the gate portion of the pMOSTFT are covered with a photoresist 20, and the exposed region is doped with boron ions 21 at, for example, 10 kV at a dose of 5 × 10 ¹⁵ atoms / cm ² , thereby ion-implanting the P ^{+ of the} pMOSTFT. The source part 22 and the drain part 23 of the layer are formed.
Note that this operation is performed in pM
This is unnecessary work because there is no OSTFT.

Next, as shown in (9) of FIG.
A photoresist 24 is provided to make an active element portion such as an FT or a diode or a passive element portion such as a resistor or an inductance into an island, and a single crystal other than the active element portion and the passive element portion in the peripheral driving region and the display region is provided. The silicon thin film layer is removed by general-purpose photolithography and etching techniques. The etching solution is hydrofluoric acid.

Next, as shown in FIG. 43 (10),
An SiO ₂ film (about 200 nm thick) and a phosphosilicate glass (PSG) film (about 300 nm thick) are successively formed on the entire surface in this order by plasma CVD, high-density plasma CVD, catalytic CVD, or the like to form a protective film 25. .

Then, the single crystal silicon layer is activated in this state. In this activation, lamp annealing conditions such as halogen are about 1000 ° C. and about 10 seconds, and a gate electrode material that can withstand this is required.
-Ta alloy is suitable. This gate electrode material therefore
The wiring can be provided not only as a gate portion but also as a wiring over a wide range. Here, expensive excimer laser annealing is not used, but if it is used, the condition is that XeCl (308 nm wavelength) is used for the entire surface, or the selective overlap of 90% or more of only the active element portion and the passive element portion. Scanning is preferred.

Next, as shown in FIG. 43 (11),
By general-purpose photolithography and etching technology, contact windows are opened in the source / drain portions of all the TFTs of the peripheral drive circuit and the source portions of the display TFT.

Then, a sputtered film of aluminum or aluminum containing 1% Si having a thickness of 500 to 600 nm is formed on the entire surface, and the peripheral drive circuit and the source electrodes 26 of all TFTs in the display section are formed by general-purpose photolithography and etching techniques. A data line and a gate line are formed at the same time as the formation of the drain electrode 27 of the peripheral driving circuit. After that, forming gas (N ₂ + H ₂ )
Sintering is performed at about 400 ° C. for 1 hour.

Next, as shown in FIG. 43 (12),
An insulating film 36 made of a PSG film (about 300 nm thick) and a SiN film (about 300 nm thick) is formed on the entire surface by plasma CVD, high-density plasma CVD, catalytic CVD, or the like. Next, a contact window is opened in the drain portion of the display TFT. It should be noted that SiO ₂ , PSG and S
It is not necessary to remove the iN film.

Next, for the same purpose as described in FIG. 5 (14), as shown in FIG. 44 (13), a photosensitive resin film 28 having a thickness of 2 to 3 μm is formed on the entire surface by spin coating or the like. 44, as shown in (14) of FIG. 44, an irregular pattern for obtaining optimal reflection characteristics and viewing angle characteristics is formed at least in the pixel portion by general-purpose photolithography and etching techniques, and the irregular surface rough surface 28A is reflowed. The lower surface of the reflecting surface is formed. At the same time, a resin window for contact of the drain portion of the display TFT is opened.

Next, as shown in (15) of FIG.
400-500 nm thick aluminum or 1% S on the entire surface
A sputtered film of i-containing aluminum or the like is formed, and the aluminum film other than the pixel portion is removed by a general-purpose photolithography and etching technique, thereby forming an aluminum reflection portion 29 having an uneven shape connected to the drain portion 19 of the display TFT. This is used as a pixel electrode for display. Thereafter, sintering is performed in a forming gas at about 300 ° C. for 1 hour to make the contact sufficient. Note that silver may be used instead of aluminum to increase the reflectance.

As described above, the single-crystal silicon layer 7 is formed by the catalytic CVD method using the crystalline sapphire film 50 as a seed for low-temperature heteroepitaxial growth, and the display section and the peripheral drive circuit section using the single-crystal silicon layer 7 are formed. Respectively, a top gate type nMOS LDD-TFT, p
A display-peripheral drive circuit unit-integrated active matrix substrate 30 incorporating a CMOS circuit composed of a MOSTFT and an nMOSTFT can be manufactured.

Using the active matrix substrate (drive substrate) 30 thus obtained, a reflective liquid crystal display (LCD) is manufactured in the same manner as described with reference to FIG.

In this embodiment, it is clear that the excellent effects described in the first embodiment can be obtained. In addition, since the single crystal silicon layer 7 is heteroepitaxially grown only by the crystalline sapphire thin film 50 without providing a step on the substrate 1, the step of forming the step can be omitted, and the manufacturing process can be further simplified and the growth can be simplified. Thus, problems such as disconnection of the single crystal silicon layer can be solved.

<Ninth Embodiment> Referring to FIGS. 46 to 48, a ninth embodiment of the present invention will be described.

This embodiment has a similar top gate type MOSTFT in the display section and the peripheral drive circuit section as compared with the above-described eighth embodiment, but is different from the above-described eighth embodiment. And a transmissive LCD. That is, the steps from (1) in FIG. 40 to the step shown in (12) in FIG. 43 are the same, but after that step, as shown in (13) in FIG. At the same time as opening the window 19 for contacting the drain portion, unnecessary portions of the SiO ₂ , PSG and SiN films in the pixel opening are removed to improve the transmittance.

Next, as shown in (14) of FIG.
A photosensitive acrylic transparent resin flattening film 28B having a thickness of 2 to 3 μm is formed on the entire surface by spin coating or the like, and a window is opened in the transparent resin 28B on the drain side of the display TFT by general-purpose photolithography. Let it cure.

Next, as shown in (15) of FIG.
An ITO sputtered film having a thickness of 130 to 150 nm is formed on the entire surface, and is contacted with the drain portion 19 of the display TFT by general-purpose photolithography and etching technology.
The TO transparent electrode 41 is formed. Then, by heat treatment (200 to 250 ° C./1 h in a forming gas), the contact resistance between the drain of the display TFT and the ITO is reduced and the transparency of the ITO is improved.

Then, as shown in FIG.
2, and a transmission type LCD is assembled in the same manner as in the eighth embodiment. However, a polarizing plate is also attached to the TFT substrate side. In this transmissive LCD, transmitted light can be obtained as shown by the solid line, but the opposing substrate 3 can be obtained as shown by the dashed line.
It is also possible to obtain transmitted light from two sides.

In the case of this transmission type LCD, an on-chip color filter (OCCF) structure and an on-chip black (OCB) structure can be manufactured as follows.

That is, (1) in FIG. 40 to (11) in FIG.
Are performed according to the above-described steps.
As shown in (12) of FIG. 8, the drain portion of the insulating film 25 of PSG / SiO ₂ is also opened to form an aluminum buried layer 41A for the drain electrode, and then the insulating film 36 of SiN / PSG is formed.

Next, as shown in (13) of FIG.
After forming a photoresist 61 having a predetermined thickness (1 to 1.5 μm) in which each color of R, G, and B is dispersed in a pigment for each segment, as shown in FIG. 48 (14), a general-purpose photolithography technique is used. Each of the color filter layers 61 (R), 61 (G), is patterned by leaving only predetermined positions (each pixel portion).
61 (B) is formed (on-chip color filter structure). At this time, the window of the drain part is also opened. An opaque ceramic substrate cannot be used.

Next, as shown in (14) of FIG.
In a contact hole communicating with the drain of the display TFT, a light shielding layer 43 serving as a black mask layer is formed by metal patterning over the color filter layer. For example, molybdenum is sputtered by 200 to 250 n.
An m-thick film is formed and patterned into a predetermined shape that covers the display TFT and shields light (on-chip black structure).

Next, as shown in (15) of FIG.
A flattening film 28B made of a transparent resin is formed, and an ITO transparent electrode 41 is further formed in a through hole provided in the flattening film by a light shielding layer 4.
3 is formed.

As described above, by forming the color filter 61 and the black mask 43 on the display array portion, the aperture ratio of the liquid crystal display panel can be improved, and the power consumption of the display module including the backlight can be reduced. Realize.

<Tenth Embodiment> FIGS. 49 to 57
Shows a tenth embodiment of the present invention.

In the present embodiment, the peripheral drive circuit section is a top gate type pMO similar to that of the above-described eighth embodiment.
It is composed of a CMOS drive circuit composed of an STFT and an nMOSTFT. The display section is of a reflection type, but has various combinations of TFTs having various gate structures.

FIG. 49A shows a top gate type nMOS LDD-T similar to that of the eighth embodiment.
Although an FT is provided in the display portion, a bottom gate type nMOS LDD-TFT shown in FIG.
The display section shown in FIG. 9C has a dual gate type nMOS.
LDD-TFTs are provided. Both of these bottom gate type and dual gate type MOS TFTs
As will be described later, the top gate type MOS of the peripheral drive circuit section
Although it can be manufactured in the same process as the TFT, especially in the case of the dual gate type, the driving capability is improved by the upper and lower gate portions, suitable for high-speed switching, and by selectively using either the upper or lower gate portion. Depending on the case, it can be operated as a top gate type or a bottom gate type.

The bottom gate type MO shown in FIG.
In the STFT, reference numeral 71 in the figure denotes a gate electrode of Mo / Ta, etc., reference numeral 72 denotes a SiN film and reference numeral 73 denotes a SiO ₂ film, which forms a gate insulating film. On this gate insulating film, a top gate type MOS TFT is formed. A channel region and the like using a similar single crystal silicon layer are formed. FIG.
In the dual gate type MOSTFT of FIG. 9C, the lower gate portion is the same as the bottom gate type MOSTFT, but the upper gate portion has a gate insulating film 73 formed of a SiO ₂ film and a SiN film, and an upper gate portion formed thereon. An electrode 74 is provided.

Next, the above bottom gate type MOSTFT
50 to 54, and a method of manufacturing the above-mentioned dual gate type MOSTFT will be described with reference to FIGS. 55 to 57, respectively. In addition, the top gate type MO of the peripheral drive circuit section
The method of manufacturing the STFT is the same as that described with reference to FIGS. 40 to 44, and is not illustrated here.

In the display section, a bottom gate type MOST
To manufacture the FT, first, as shown in FIG. 50 (1), molybdenum / tantalum (Mo.Ta)
An alloy sputtered film 71 (500 to 600 nm thick) is formed.

Next, as shown in FIG. 50 (2), a photoresist 70 is formed in a predetermined pattern, and using this as a mask, the Mo.Ta film 9 is taper-etched to form a side end 7.
1a forms a trapezoidal gate electrode 71 that is gently inclined at 20 to 45 degrees.

Next, as shown in FIG. 50C, after removing the photoresist 71, the substrate 1 including the molybdenum-tantalum alloy film 71 is formed on the substrate 1 by a plasma CVD method or the like.
SiN film (about 100 nm thick) 72 and SiO ₂ film (about 20 nm thick)
(Thickness of 0 nm) 73 is formed in this order to form a gate insulating film.

Next, as shown in (4) of FIG. 51, in the same step as (1) of FIG. 40, crystalline sapphire is formed on at least the TFT formation region on one main surface of the insulating substrate 1 as described above. Thin film (thickness 20 to 200 nm) 5
0 is formed.

Next, as shown in FIG.
In the same step as step (2), the single crystal silicon is heteroepitaxially grown by the catalytic CVD method as described above, and is deposited as a single crystal silicon layer 7 having a thickness of, for example, about 0.1 μm. At this time, the underlying gate electrode 71
Side end 71a is a gentle slope,
On this surface, the single crystal silicon layer 7 grows without interrupting the epitaxial growth due to the step 4.

Next, as shown in FIG. 51 (6), after the steps of FIG. 40 (3) to FIG. 41 (5), FIG.
In the same step as (6), nMOSTFT of the display section
Is covered with a photoresist 13 and phosphorus ion 1 is added to the exposed source / drain regions of the nMOS TFT.
4 is doped (ion-implanted) to form a self-aligned LDD portion 15 made of an N ⁻ -type layer. At this time, the surface height difference (or pattern) can be easily recognized by the presence of the bottom gate electrode 71, the photoresist 13 can be easily positioned (mask-aligned), and alignment deviation hardly occurs.

Next, as shown in FIG. 52 (7), FIG.
In the same step as (7) of No. 2, the gate portion and the LDD portion of the nMOS TFT are covered with the photoresist 16 and the exposed region is doped (ion-implanted) with phosphorus or arsenic ion 17 to remove the nMOS TFT from the N ⁺ -type layer. The source part 18 and the drain part 19 are formed.

Next, as shown in FIG. 52 (8), in the same step as FIG. 42 (8), the entire nMOS TFT is covered with the photoresist 20 and the
(Ion implantation) to perform pM of the peripheral drive circuit section
The source part and the drain part of the P ⁺ layer of the OSTFT are formed.

Next, as shown in FIG. 52 (9), in the same step as FIG. 42 (9), a photoresist 24 is provided to make the active element portion and the passive element portion into islands, and a single crystal silicon thin film is formed. The layers are selectively removed by general purpose photolithography and etching techniques.

Next, as shown in (10) of FIG.
In the same step as (10) in FIG.
D, S by high density plasma CVD, catalytic CVD, etc.
An iO ₂ film 53 (about 300 nm thick) and a phosphosilicate glass (PSG) film 54 (about 300 nm thick) are formed on the entire surface in this order. The SiO ₂ film 53 and the PSG film 54 correspond to the above-described protective film 25. Then, in this state, the single crystal silicon film is activated in the same manner as described above.

Next, as shown in FIG. 53 (11),
In the same step as (11) in FIG. 43, a contact window is opened in the source section by general-purpose photolithography and etching technology. And 400-500n on the whole surface
A m-thick sputtered film of aluminum or aluminum containing 1% Si is formed, and a data line and a gate line are formed simultaneously with the source electrode 26 of the TFT by general-purpose photolithography and etching techniques.
After that, at about 400 ° C / 1h in forming gas,
Sinter.

Next, as shown in FIG. 53 (12),
In the same step as (12) in FIG. 43, the PSG film (about 300 n
An insulating film 36 made of a m-thick film and a SiN film (about 300 nm-thick) is formed on the entire surface, and a contact window is opened in the drain of the display TFT.

Next, as shown in FIG. 53 (13),
In the same step as (13) in FIG. 44, a photosensitive resin film 28 having a thickness of 2 to 3 μm is formed by spin coating or the like.
As shown in (14), by using general-purpose photolithography and etching techniques, an uneven pattern is formed at least in the pixel portion so as to obtain optimal reflection characteristics and viewing angle characteristics, and is reflowed to form a reflection formed of the uneven surface 28A. Form the lower surface. At the same time, a resin window for contact of the drain portion of the display TFT is opened.

Next, as shown in FIG. 53 (14),
In the same step as (15) in FIG.
A sputtered film of aluminum or aluminum containing 1% Si with a thickness of 500 nm is formed, and an aluminum reflecting portion 29 having an uneven shape connected to the drain portion 19 of the display TFT is formed by general-purpose photolithography and etching technology.

As described above, the bottom gate type nMOS LDD-TFT is formed on the display section using the single crystal silicon layer 7 formed by using the crystalline sapphire thin film 50 as a seed for low-temperature heteroepitaxial growth by the catalytic CVD method.
The display-peripheral drive circuit unit-integrated active matrix substrate 30 incorporating the CMOS driver circuit including the pMOSTFT and the nMOSTFT in the peripheral portion can be manufactured.

FIG. 54 shows an example in which the gate insulating film of the above-mentioned bottom gate type MOSTFT provided in the display portion is formed by an anodic oxidation method of Mo · Ta.

That is, after the step (2) in FIG.
As shown in (3), the molybdenum-tantalum alloy film 71
Is subjected to a known anodic oxidation treatment so that T
a ₂ O ₅ gate insulating film 74 of 100 to 200 n
m thickness.

In the subsequent steps, as shown in FIG. 54 (4), a crystalline sapphire thin film 50 is formed in the same manner as in the steps (4) to (5) in FIG. After heteroepitaxial growth of the crystalline silicon film 7,
As shown in FIG. 54 (5), the active matrix substrate 30 is manufactured in the same manner as in the steps (6) of FIG. 51 to (14) of FIG.

Next, in order to manufacture a dual gate type MOSTFT in the display section, first, FIG.
The steps up to (5) in FIG. 51 are performed in the same manner as described above.

That is, as shown in FIG. 55 (6), a crystalline sapphire thin film 50 is formed on the insulating films 72 and 73.
Further, the single-crystal silicon layer 7 is heteroepitaxially grown using the crystalline sapphire thin film 50 as a seed.
Next, in the same step as (4) in FIG. 41, plasma CVD and catalytic CVD are performed on the entire surface of the single crystal silicon thin film 7.
For example, an SiO ₂ film (about 200 nm thick) and a SiN film (about 100 nm thick) are successively formed in this order to form an insulating film 80 (which corresponds to the above-described insulating film 8).
An a-alloy sputtered film 81 (500 to 600 nm thick) (corresponding to the above-described sputtered film 9) is formed.

Next, as shown in (7) of FIG. 55, in the same step as (5) of FIG. 41, a photoresist pattern 10 is formed, and Mo · T is continuously etched.
An a-alloy top gate electrode 82 (which corresponds to the above-described gate electrode 12) and a gate insulating film 83 (which corresponds to the above-described gate insulating film 11) are formed to expose the single crystal silicon thin film layer 7.

Next, as shown in (8) of FIG. 55, in the same step as (6) of FIG. 41, the top gate portion of the nMOS TFT is covered with the photoresist 13 and the source / drain of the exposed nMOS TFT for display is exposed. The region is doped with phosphorus ions 14 (ion implantation) to form an LDD portion 15 of an N ⁻ -type layer.

Next, as shown in FIG.
In the same step as (7) of No. 2, the gate portion and the LDD portion of the nMOS TFT are covered with the photoresist 16 and the exposed region is doped (ion-implanted) with phosphorus or arsenic ion 17 to remove the nMOS TFT from the N ⁺ -type layer. The source part 18 and the drain part 19 are formed.

Next, as shown in (10) of FIG.
In the same step as (8) in FIG. 42, the gate portion of the pMOSTFT is covered with the photoresist 20, and the exposed region is doped with boron ions 21 (ion implantation) to perform the source of the P ⁺ layer of the pMOSTFT in the peripheral drive circuit portion. And a drain part are formed.

Next, as shown in (11) of FIG.
In the same step as (9) in FIG. 42, a photoresist 24 is provided in order to make the active element section and the passive element section into islands, and the single crystal silicon thin film layer other than the active element section and the passive element section is subjected to general-purpose photolithography and etching. Selective removal with technology.

Next, as shown in FIG. 56 (12),
In the same step as (10) in FIG.
D, S by high density plasma CVD, catalytic CVD, etc.
An iO ₂ film 53 (about 200 nm thick) and a phosphosilicate glass (PSG) film 54 (about 300 nm thick) are formed on the entire surface. These films 53 and 54 correspond to the protective film 25 described above. Then, the single crystal silicon layer 7 is activated.

Next, as shown in (13) of FIG.
In the same step as (11) in FIG. 43, a contact window is opened in the source section. And 400-500 on the whole surface
A data line and a gate line are formed at the same time as the source electrode 26 is formed by a general-purpose photolithography and etching technique by forming a sputtered film of aluminum or aluminum containing 1% Si with a thickness of nm.

Next, as shown in (14) of FIG.
In the same step as (13) in FIG.
Thickness) and an insulating film 3 composed of a SiN film (about 300 nm thick)
6 is formed on the entire surface, and a contact window is opened in the drain of the display TFT.

Next, as shown in FIG. 57 (15),
A photosensitive resin film 28 having a thickness of 2 to 3 μm is formed on the entire surface by spin coating or the like, and as shown in FIG.
In the same manner as in the steps (14) and (15) of No. 4, at least a lower portion of the reflecting surface composed of the roughened rough surface 28A is formed in the pixel portion, and at the same time, a resin window for contact of the drain portion of the display TFT is opened. An aluminum reflecting portion 29 having a concave and convex shape for obtaining optimum reflection characteristics and viewing angle characteristics is formed, which is connected to the drain portion 19 of the display TFT.

As described above, the single-crystal silicon layer 7 formed with the crystalline sapphire thin film 50 as a seed for heteroepitaxial growth by the catalytic CVD method is used, and a dual gate type nMOSLDD TFT is used for a display portion and a peripheral drive circuit portion is used. A display-peripheral drive circuit unit integrated active matrix substrate 30 incorporating a CMOS drive circuit composed of pMOSTFTs and nMOSTFTs can be manufactured.

<Eleventh Embodiment> FIGS. 58 to 60
Shows an eleventh embodiment of the present invention.

In the present embodiment, unlike the above-described embodiments, the gate electrode of the top gate portion is formed of a material having relatively low heat resistance such as aluminum.

First, when the top gate type MOSTFT is provided in both the display portion and the peripheral drive circuit portion, the steps (1) to (3) of FIG. 40 in the eighth embodiment are performed in the same manner. As shown in FIG. 58 (3), an N-type well 7A is formed in the pMOSTFT portion of the peripheral drive circuit portion.

Next, as shown in FIG. 58D, all of the nMOS and pMOSTFTs in the peripheral drive region and the gate portion of the nMOSTFT in the display region are formed by photoresist 13.
And cover the exposed source / drain regions of the nMOS TFT with phosphorus ions 14 at 5 × 10 ¹³ at, for example, 20 kV.
By doping (ion implantation) at a dose of atoms / cm ^2, the LDD portion 15 made of an N ⁻ -type layer is formed in a self-aligned manner.

Next, as shown in FIG. 59 (5), all of the pMOS TFTs in the peripheral drive region and n in the peripheral drive region
Gate portion of MOSTFT and nMOSTFT in display area
Is covered with a photoresist 16 and phosphorus or arsenic ions 17 are exposed to the
By doping (ion implantation) at 0 kV and a dose of 5 × 10 ¹⁵ atoms / cm ² , the source 18 and the drain 19 and the LDD 15 made of the N ⁺ type layer of the nMOS TFT are formed. In this case, if the resist 13 is left like an imaginary line, and the resist 16 is provided so as to cover the resist 13, the mask 13 can be used as a guide for the mask alignment at the time of forming the resist 16, the mask alignment can be facilitated, and the misalignment can be achieved. Is also reduced.

Next, as shown in (6) of FIG. 59, the nMOSTFT in the peripheral drive region and the nMOSTT in the display region are used.
The entire FT and the gate portion of the pMOSTFT are covered with a photoresist 20, and the exposed region is doped with boron ions 21 at, for example, 10 kV at a dose of 5 × 10 ¹⁵ atoms / cm ² , thereby ion-implanting the P ^{+ of the} pMOSTFT. The source part 22 and the drain part 23 of the layer are formed.

Next, after removing the resist 20, FIG.
As shown in (7), the single crystal silicon layers 7 and 7A are activated in the same manner as described above, and a gate insulating film 12 and a gate electrode material (aluminum or aluminum containing 1% Si or the like) 11 are further provided on the surface. Form. Gate electrode material layer 1
1 can be formed by a vacuum evaporation method or a sputtering method.

[0276] Then, in the same manner as described above, after patterning the gate portion, an island of the active element portion and the passive element, as further shown in (8) in FIG. 60, SiO ₂
Film (about 200 nm thick) and phosphor silicate glass (PS
G) A protective film 25 is formed by continuously forming a film (thickness of about 300 nm) on the entire surface in this order.

Next, as shown in (9) of FIG. 60, contact windows for the source / drain portions of all the TFTs of the peripheral drive circuit and the source portions of the display TFTs are opened by general-purpose photolithography and etching techniques. .

Then, a sputtered film of aluminum or aluminum containing 1% Si having a thickness of 500 to 600 nm is formed on the entire surface, and the source electrodes 26 of all the TFTs in the peripheral driving circuit and the display section are formed by general-purpose photolithography and etching technology. A data line and a gate line are formed at the same time as the formation of the drain electrode 27 of the peripheral driving circuit. After that, forming gas (N ₂ + H ₂ )
Sintering is performed at about 400 ° C. for 1 hour.

Next, (12) in FIG. 43 to (1) in FIG.
In the same manner as in 5), the display portion using the single-crystal silicon layer 7 and the peripheral drive circuit portion are each provided with a top gate type nMOS LDD-TFT, p
A display-peripheral drive circuit unit integrated type active matrix substrate 30 incorporating a CMOS drive circuit composed of MOSTFTs and nMOSTFTs can be manufactured.

In the present embodiment, the gate electrode 11 made of aluminum or aluminum containing 1% Si is formed after the activation treatment of the single crystal silicon layer 7, so that the influence of heat during the activation treatment is not limited to the gate electrode. Since it has no relation to the heat resistance of the material, the heat resistance of the top gate electrode material is relatively low, and low-cost aluminum or aluminum or copper containing 1% Si can be used. This is because the display unit is a bottom gate type MO
The same is true for the STFT.

Next, a dual gate type MOST is provided in the display section.
In the case where the top gate type MOSTFT is provided in the FT and the peripheral driving circuit, the circuit shown in FIG.
8 (6) to (13) of FIG. 30 to form a dual gate type nMOS having a gate electrode of aluminum or the like for the display section and the peripheral drive circuit section.
A display-peripheral drive circuit unit integrated active matrix substrate 30 incorporating a CMOS drive circuit composed of LDD-TFTs, pMOSTFTs, and nMOSTFTs can be manufactured.

<Twelfth Embodiment> FIGS. 61 to 62
Shows a twelfth embodiment of the present invention.

The example of FIG. 61 relates to a TFT having a self-aligned LDD structure, for example, a double-gate MOSTFT in which a plurality of top-gate LDD-TFTs are connected in the eighth embodiment.

FIG. 62 shows a bottom gate type MOSTF.
T has a double-gate structure (A) and dual-gate MOSTFT has a double-gate structure (B).

These double-gate MOSTFTs also
It has the same advantages as those described with reference to FIGS.

<Thirteenth Embodiment> FIGS. 63 to 71
Shows a thirteenth embodiment of the present invention.

As described above, the top gate type, bottom gate type, and dual gate type TFTs each have a difference in structure or function or a feature. Therefore, these are used in the display portion and the peripheral drive circuit portion. At this time, it may be advantageous to provide various combinations of TFTs between these units.

For example, as shown in FIG. 63, when any of a top gate type, a bottom gate type, and a dual gate type MOSTFT is adopted for the display portion, the top gate type MOSTFT and the bottom gate type MOSTFT are used for the peripheral driving circuit.
Of the TFT and the dual gate type MOSTFT, at least a top gate type can be adopted, or they can be mixed. There are 12 combinations (N
o.1 to No.12). Especially, MOS of peripheral drive circuit
When a dual gate structure is used for a TFT, such a dual gate structure can be easily changed to a top gate type or a bottom gate type by selecting upper and lower gate portions. When a TFT having a large driving capacity is required, a dual gate type may be required. For example, it is considered necessary when the present invention is applied to an organic EL or FED as an electro-optical device other than an LCD.

FIGS. 64 and 65 show the MOSTFT of the display section.
66 and FIG. 67 show the case where the MOSTFT of the display section has the LDD structure, when FIG.
Reference numeral 9 denotes a TF having an LDD structure in which a MOSTFT in a peripheral drive circuit section has an LDD structure.
70 and FIG. 71, when both the peripheral drive circuit section and the display section include the MOSD having the LDD structure, the respective MOSTs of the peripheral drive circuit section and the display section are shown.
Various examples (No. 1 to No. 216) showing combinations of FTs by channel conductivity type are shown.

As described above, the combinations according to the gate structures shown in FIG. 63 are specifically as shown in FIGS. 64 to 71. The same combination is possible even when the peripheral drive circuit section is composed of a mixed-type MOSTFT of a top gate type and another gate type. FIG. 63
The various combinations of TFTs shown in FIG. 71 to FIG. 71 are not limited to the case where the TFT channel region and the like are formed of single-crystal silicon, but are similarly applied to the case where the TFTs are formed of polycrystalline silicon or amorphous silicon (only the display portion). It is possible.

<Fourteenth Embodiment> FIGS. 72 to 73
Shows a fourteenth embodiment of the present invention.

In the present embodiment, in an active matrix drive LCD, a TFT using the above-described single crystal silicon layer is provided in the peripheral drive circuit portion based on the present invention from the viewpoint of improvement in drive capability. However, this is not limited to the top gate type, other gate types may be mixed, the channel conductivity type may be various, and a MOSTFT using a polycrystalline silicon layer other than a single crystal silicon layer is included. It may be. On the other hand, the MOSTFT of the display portion preferably uses a single-crystal silicon layer, but is not limited to this, and may use a polycrystalline silicon or amorphous silicon layer, or at least three types of silicon layers. A mixture of two types may be used. However, when the display section is formed of an nMOS TFT, a practical switching speed can be obtained by using an amorphous silicon layer.
The area can be reduced, and it is more advantageous than amorphous silicon in reducing pixel defects. It is to be noted that not only single-crystal silicon but also polycrystalline silicon is simultaneously generated during the heteroepitaxial growth described above, and so-called CGS (Continuous
Grain silicon) structures may also be included, but can also be used to form active and passive devices.

FIG. 72 shows examples (A), (B) and (C) of various combinations of MOSTFTs between the respective parts.
Shows a specific example. When single crystal silicon is used, the current driving capability is improved, so that the element can be made smaller.
The screen can be enlarged, and the aperture ratio in the display section is improved.

In the peripheral drive circuit section, the above MOS is used.
Of course, not only the TFT but also an electronic circuit in which a diode, a capacitance, a resistance, an inductance and the like are integrated may be formed integrally on an insulating substrate (a glass substrate or the like).

<Fifteenth Embodiment> FIG. 74 shows a fifteenth embodiment of the present invention.

In this embodiment, each of the above-described embodiments is directed to an example of active matrix driving, but the present invention is applied to passive matrix driving.

That is, the display section is provided with no switching element such as the MOSTFT described above, and the incident light or the reflected light of the display section is dimmed only by a potential difference caused by a voltage applied between a pair of electrodes formed on the opposite substrate. You. Such dimming devices include reflective and transmissive LCDs, organic ELs (electroluminescent display devices), FEDs (field emission display devices), LEPDs (light emitting polymer display devices), LE
D (light emitting diode display element) and the like are also included.

<Sixteenth Embodiment> FIG. 75 shows a sixteenth embodiment of the present invention.

In the present embodiment, the present invention is applied to an electro-optical device other than an LCD, such as an organic or inorganic EL (electroluminescence) element, FED (field emission display element),
It is applied to D (light emitting polymer display element), LED (light emitting diode display element) and the like.

That is, FIG. 75A shows an EL element driven by an active matrix. For example, an organic EL layer using an amorphous organic compound (or an inorganic EL layer using ZnS: Mn) 90 is formed on the substrate 1. The transparent electrode (ITO) 41 described above is formed at the lower part, and the cathode 91 is formed at the upper part. Light emission of a predetermined color can be obtained through the filter 61 by applying a voltage between these two electrodes.

At this time, in order to apply a data voltage to the transparent electrode 41 by active matrix driving, the catalyst CV is used with the sapphire film 50 and the step 4 on the substrate 1 as seeds.
Single crystal silicon MOSTF according to the present invention using single crystal silicon layer heteroepitaxially grown by method D
T (that is, nMOSLDD-TFT) is formed on the substrate 1. A similar TFT is provided in a peripheral driving circuit. This EL element uses an MO using a single crystal silicon layer.
Since it is driven by the SLDD-TFT, the switching speed is high and the leak current is small. The filter 61 can be omitted if the EL layer 90 emits a specific color.

In the case of the EL element, since the driving voltage is high, the peripheral driving circuit section includes, in addition to the above MOSTFT,
It is advantageous to provide a high breakdown voltage driver element (such as a high breakdown voltage cMOS TFT and a bipolar element).

FIG. 75B shows an FED driven by passive matrix. Electrons emitted from the cold cathode 94 by a voltage applied between the electrodes 92 and 93 in a vacuum section between the opposing glass substrates 1-32. Is incident on the opposing phosphor layer 96 by selecting the gate line 95, thereby obtaining light emission of a predetermined color.

Here, the emitter line 92 is guided to a peripheral driving circuit and driven by a data voltage. The peripheral driving circuit is provided with a MOSTFT using a single crystal silicon layer according to the present invention. This contributes to high-speed driving of the emitter line 92. The FED can be driven in an active matrix by connecting the above-mentioned MOSTFT to each pixel.

In the element shown in FIG.
If a known light emitting polymer is used instead of the layer 90, a passive matrix or active matrix driven light emitting polymer display device (LEPD) can be formed. In addition, a device similar to the FED using the diamond thin film on the cathode side in the element shown in FIG. 75B can also be configured. Further, in a light emitting diode, for example, a gallium-based (gallium.
It can drive a light-emitting portion made of a film of aluminum, arsenic, or the like. Alternatively, it is conceivable that the film of the light emitting portion is grown by single crystal by the epitaxial growth method of the present invention.

The embodiments of the present invention described above can be variously modified based on the technical concept of the present invention.

For example, at the time of forming the single crystal silicon film 7 by the above-mentioned catalytic CVD method, diborane (B ₂ H ₆ ), phosphine (PH ₃ ), arsine (AsH ₃ ), stibine (SbH ₃ ) and the like are supplied. If, for example, boron, phosphorus, antimony, arsenic, or the like is doped into the single-crystal silicon film 7 by an appropriate amount by decomposition of the supply gas, the P-type or N-type conductivity type of the silicon epitaxial growth layer 7 to be grown and the carrier concentration thereof can be arbitrarily set. Can be controlled. The single-crystal silicon film 7 is formed by a high-density plasma CVD method, for example, E
It can also be formed by CR (Electron Cyclotron Resonance) plasma CVD.

In order to prevent diffusion of ions from the glass substrate, a SiN film (for example, 50 to 200 nm) is formed on the substrate surface.
Thickness) and, if necessary, a SiO ₂ film (for example, 100 n
m thickness), and the step 4 as described above may be formed on these films. The above-described steps can be formed by ion milling or the like in addition to RIE. Further, as described above, it is a matter of course that the step 4 may be formed within the thickness of the crystalline sapphire film or the sapphire substrate itself other than forming the step 4 on the substrate 1.

The sapphire (Al ₂ O ₃ )
Instead, a spinel structure (eg, magnesia spinel) having good lattice matching with single crystal silicon (MgO.Al ₂
O ₃ ), CaF ₂ , SrF ₂ , BaF ₂ , BP, (Y
₂ O ₃ ) _m , (ZrO ₂ ) _{1-m and the} like can be used.

The present invention is suitable for a TFT of a peripheral drive circuit. In addition, the active region of an element such as a diode and the passive region such as a resistor, a capacitance, an inductance, etc. It is also possible to form them in layers.

[0311]

According to the present invention, a material layer such as a crystalline sapphire film or the like having a good lattice matching with a single crystal semiconductor such as single crystal silicon is used as a seed to form a single crystal semiconductor or a high density plasma CVD method. Crystal silicon is heteroepitaxially grown, and the obtained single crystal silicon thin film layer is formed into at least an active element and a passive element such as a top gate type MOSTFT of a peripheral drive circuit section of an electro-optical device such as an LCD integrated with a display section and a peripheral drive circuit. Since it is used for an active element, the following remarkable functions and effects shown in (A) to (G) can be obtained.

(A) A material layer (for example, a crystalline sapphire film) having good lattice matching with single-crystal silicon is formed on a substrate, and heteroepitaxial growth is performed using the material layer as a seed, thereby obtaining a high material layer of 540 cm ² / v · sec or more. Since a single-crystal semiconductor layer such as a single-crystal silicon thin film having electron mobility can be obtained, an electro-optical device such as a display thin-film semiconductor device with a built-in high-performance driver can be manufactured.

(B) In particular, the single-crystal silicon top gate type TFT made of this single-crystal silicon thin film has high switching characteristics, and has an nMOS or pM having an LDD structure.
OS or cMOSTFT display and high drive capability c
A configuration in which a MOS, nMOS, pMOSTFT, or a peripheral drive circuit composed of a mixture thereof is integrated becomes possible, and a high-quality, high-definition, narrow frame, high-efficiency, large-screen display panel is realized.

(C) The above-mentioned material layer is used as a seed for heteroepitaxial growth, and a catalytic CVD method (chemical vapor deposition using a catalyst: substrate temperature 2) is formed on this material layer.
Since a single-crystal silicon layer can be formed by a low-temperature film formation technique at a temperature of, for example, 100 to 800 ° C., particularly 300 to 400 ° C., a single-crystal semiconductor layer of single-crystal silicon or the like can be uniformly formed on a substrate at a low temperature. Therefore, a glass substrate having a relatively low strain point, a heat-resistant organic substrate, or the like can be easily obtained, a low-cost substrate having good physical properties can be used, and the substrate can be enlarged.

(D) Since long-time annealing at an intermediate temperature and excimer laser annealing as in the case of the solid-phase growth method are not required, productivity is high, costly manufacturing equipment is not required, and cost can be reduced. .

(E) In this heteroepitaxial growth, the crystallinity of the material layer such as crystalline sapphire and the catalyst CV
By adjusting the gas composition ratio such as D, the substrate heating temperature, the cooling rate, etc., a wide range of conductive type such as P-type or N-type and a high mobility single crystal silicon thin film can be easily obtained, so that Vth adjustment is easy. Therefore, high-speed operation can be performed by lowering the resistance.

(F) In addition, when single-crystal silicon is formed by catalytic CVD or the like, an impurity element belonging to Group 3 or Group 5 (boron,
Phosphorous, antimony, arsenic, bismuth, aluminum, etc.)
It is possible to arbitrarily control the impurity species and / or the concentration of the single crystal silicon thin film formed by heteroepitaxial growth, that is, the conductivity type such as P-type / N-type and / or the carrier concentration.

(G) The material layer such as a crystalline sapphire thin film serves as a diffusion barrier for various atoms, so that diffusion of impurities from the glass substrate can be suppressed.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a manufacturing process of an LCD (Liquid Crystal Display) according to a first embodiment of the present invention in the order of steps.

FIG. 2 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 3 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 4 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 5 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 6 is a sectional view of an essential part of the LCD.

FIG. 7 is a schematic view of a catalytic CVD apparatus used for manufacturing an LCD.

FIG. 8 is a schematic perspective view for explaining the state of silicon crystal growth on an amorphous substrate.

FIG. 9 is a schematic sectional view showing various step shapes and a silicon growth crystal orientation in the grapho-epitaxial growth technique.

FIG. 10 is a perspective view showing an overall schematic layout of the LCD according to the first embodiment of the present invention.

FIG. 11 is an equivalent circuit diagram of the LCD.

FIG. 12 is a schematic configuration diagram of the same LCD.

FIG. 13 is a cross-sectional view showing a process of manufacturing an LCD according to the second embodiment of the present invention in the order of steps.

FIG. 14 is a sectional view of an essential part of the LCD.

FIG. 15 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 16 is a sectional view of a main part of an LCD according to a third embodiment of the present invention.

FIG. 17 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 18 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 19 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 20 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 21 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 22 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 23 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 24 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 25 is a cross-sectional view showing a manufacturing process of the LCD according to the fourth embodiment of the present invention in the order of steps.

FIG. 26 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 27 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 28 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 29 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 30 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps.

FIG. 31 is a fragmentary cross-sectional view of the same at the time of manufacturing the LCD;

FIG. 32 is a fragmentary cross-sectional view of the same at the time of manufacturing the LCD;

FIG. 33 is a plan view or a sectional view showing various TFTs of an LCD according to a fifth embodiment of the present invention.

FIG. 34 is a cross-sectional view showing various TFTs at the time of manufacturing the LCD.

FIG. 35 is a cross-sectional view of a main part of the LCD.

FIG. 36 is a sectional view or a plan view of a main part of an LCD according to a sixth embodiment of the present invention.

FIG. 37 is a cross-sectional view of a principal part of various TFTs of the LCD.

FIG. 38 is an equivalent circuit diagram of a TFT of the LCD.

FIG. 39 shows T of the LCD according to the seventh embodiment of the present invention.
It is principal part sectional drawing of FT.

FIG. 40 is a cross-sectional view showing a manufacturing process of the LCD according to the eighth embodiment of the present invention in the order of steps.

FIG. 41 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 42 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 43 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 44 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 45 is a cross-sectional view of a main part of the same LCD.

FIG. 46 is a cross-sectional view showing a manufacturing process of the LCD according to the ninth embodiment of the present invention in the order of steps;

FIG. 47 is a cross-sectional view of a main part of the same LCD.

FIG. 48 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 49 is a fragmentary cross-sectional view of an LCD according to a tenth embodiment of the present invention.

FIG. 50 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 51 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 52 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 53 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 54 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 55 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 56 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 57 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 58 is a cross sectional view showing the manufacturing process of the LCD according to the eleventh embodiment of the present invention in the order of steps;

FIG. 59 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 60 is a cross-sectional view showing a manufacturing process of the LCD in the order of steps;

FIG. 61 is a sectional view or a plan view of a main part of an LCD according to a twelfth embodiment of the present invention.

FIG. 62 is a cross-sectional view of a principal part of various TFTs of the LCD.

FIG. 63 is a diagram showing a combination of TFTs of each part of the LCD according to the thirteenth embodiment of the present invention.

FIG. 64 is a view showing a combination of TFTs of each part of the LCD.

FIG. 65 is a diagram showing a combination of TFTs of each part of the LCD.

FIG. 66 is a diagram showing a combination of TFTs of each part of the LCD.

FIG. 67 is a diagram showing a combination of TFTs in each part of the LCD.

FIG. 68 is a view showing a combination of TFTs of each part of the LCD.

FIG. 69 is a view showing a combination of TFTs of each part of the LCD.

FIG. 70 is a diagram showing a combination of TFTs of each part of the LCD.

FIG. 71 is a diagram showing a combination of TFTs in each part of the LCD.

FIG. 72 is a schematic layout diagram of an LCD according to a fourteenth embodiment of the present invention.

FIG. 73 is a view showing a combination of TFTs of each part of the LCD.

FIG. 74 is a schematic layout diagram of a device according to a fifteenth embodiment of the present invention;

FIG. 75 is a sectional view of a main part of an EL and FED according to a sixteenth embodiment of the present invention;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Glass (or quartz) substrate, 4 ... Step, 7 ... Single-crystal silicon layer, 9 ... Mo.Ta layer, 11 ... Gate electrode, 12
... Gate oxide films, 14, 17 ... N-type impurity ions, 15
... LDD part, 18, 19 N ⁺ type source or drain region, 21 P type impurity ion, 22, 23 P ⁺ type source or drain region, 25, 36 insulating film, 26, 2
7, 31, 41: electrode, 28: flattening film, 28A: rough surface (irregularity), 29: reflective film (or electrode), 30: LCD
(TFT) substrate, 33, 34: alignment film, 35: liquid crystal, 3
7, 46: color filter layer, 43: black mask layer, 50: crystalline sapphire thin film, 100: silicon hydride gas, 101: deposition chamber, 103: catalyst body, 104: external heating means

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuichi Sato 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Hajime Yagi 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 2H092 JA25 JA26 JA29 JA35 JA38 JA42 JA43 JA44 JA46 JB13 JB23 JB32 JB33 JB42 JB54 JB56 JB63 JB69 KA04 KA07 KA12 KB14 KB23 MA07 MA14 MA15 MA16 MA18 MA19 MA20 MA23 MA29 NA29 PA06 PA08 QA07

Claims (176)

[Claims] 1. A display device comprising: a display portion on which a pixel electrode is disposed; and a peripheral driver circuit portion disposed around the display portion on a first substrate. An electro-optical device having a predetermined optical material interposed therebetween, a material layer having good lattice matching with a single crystal semiconductor such as single crystal silicon is formed on one surface of the first substrate; A single crystal semiconductor layer such as a single crystal silicon layer is formed on the first substrate including a layer, and the single crystal semiconductor layer forms at least an active element of an active element and a passive element. Electro-optical device. 2. A top-gate first thin film transistor having the single crystal silicon layer as a channel region, a source region, and a drain region and having a gate portion above the channel region forms at least a part of the peripheral driver circuit portion. The electro-optical device according to claim 1, wherein the electro-optical device is configured. 3. An insulating substrate is used as the first substrate, and the material layer is sapphire, spinel structure, calcium fluoride, strontium fluoride, barium fluoride,
The electro-optical device according to claim 1, wherein the electro-optical device is formed of a material selected from the group consisting of boron phosphide, yttrium oxide, and zirconium oxide. 4. The electro-optical device according to claim 1, wherein an impurity species of Group 3 or Group 5 and / or a concentration thereof is controlled in the single crystal silicon layer. 5. The electro-optical device according to claim 1, wherein a diffusion barrier layer is provided between the first substrate and the single crystal silicon layer. 6. The electro-optical device according to claim 1, wherein the gate portion below the single crystal silicon layer has a trapezoidal shape at a side end thereof. 7. The peripheral driving circuit section, wherein the first
A thin film transistor of a top gate type, a bottom gate type or a dual gate type having a polycrystalline or amorphous silicon layer as a channel region and having a gate portion above and / or below the channel region. The electro-optical device according to claim 1, wherein a diode, a resistor, a capacitance, an inductance element, or the like using a layer, a polycrystalline silicon layer, or an amorphous silicon layer is provided. 8. The electro-optical device according to claim 2, wherein a switching element for switching the pixel electrode in the display unit is provided on the first substrate. 9. The first thin film transistor is at least a top gate type selected from a top gate type, a bottom gate type, or a dual gate type having a gate portion above and / or below a channel region, and The electro-optical device according to claim 8, wherein the switching element is the top gate type, the bottom gate type, or the dual gate type second thin film transistor. 10. The gate electrode provided below the channel region is made of a heat-resistant material.
2. The electro-optical device according to 1. 11. The electro-optical device according to claim 9, wherein the thin film transistors of the peripheral driver circuit portion and the display portion form an n-channel, p-channel or complementary insulated gate field-effect transistor. 12. The thin film transistor of the peripheral drive circuit section comprises a set of a complementary type and an n-channel type, a set of a complementary type and a p-channel type, or a set of a complementary type, an n-channel type and a p-channel type. An electro-optical device according to claim 11. 13. The semiconductor device according to claim 1, wherein at least a part of the thin film transistor of the peripheral driver circuit unit and / or the display unit is an LDD (Li).
ghtly doped drain) structure, and this LDD structure is a single type in which an LDD portion exists between a gate and a source or a drain, or a double type having an LDD portion between a gate and a source and a drain, The electro-optical device according to claim 9. 14. The thin film transistor of the peripheral driver circuit portion and / or the display portion is configured as a single gate or a multi-gate, and in the case of a multi-gate, two or more branched same potentials in a channel region, or The electro-optical device according to claim 9, further comprising divided gate electrodes having different potentials or the same potential. 15. When the n or p channel type thin film transistor of the peripheral driver circuit section and / or the display section is a dual gate type, an upper or lower gate electrode is electrically open or an arbitrary negative electrode. Voltage (n
The electro-optical device according to claim 9, wherein a channel type) or a positive voltage (p-type) is applied to operate as a bottom-gate or top-gate thin film transistor. 16. When the thin film transistor of the peripheral driver circuit portion is the n-channel, p-channel, or complementary first thin film transistor, and the thin film transistor of the display portion uses a single crystal silicon layer as a channel region, n-channel type, p-channel type or complementary type; n-channel type, p-channel type or complementary type when the polycrystalline silicon layer is used as the channel region; n-channel type or p-type when the amorphous silicon layer is used as the channel region. The electro-optical device according to claim 11, which is a channel type or a complementary type. 17. A step is formed on the first substrate,
2. The electro-optical device according to claim 1, wherein the material layer is formed on the first substrate including the step, and the single crystal silicon layer is formed on the material layer. 18. The step is formed as a concave part whose side surface is perpendicular to the bottom surface or inclined toward the lower end in the cross section, and this step serves as a seed for epitaxial growth of the single crystal silicon layer together with the material layer. The electro-optical device according to claim 17, wherein the electro-optical device comprises: 19. The method according to claim 18, wherein the first thin film transistor is provided inside and / or outside a concave portion of the substrate formed by the step formed on the first substrate and / or a film thereon. Electro-optical device. 20. The electro-optical device according to claim 17, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. . 21. The electro-optical device according to claim 1, wherein a step is formed in the material layer, and the single crystal silicon layer is formed on the material layer including the step. 22. The step is formed as a concave portion whose side surface is perpendicular to the bottom surface in the cross section or inclined toward the lower end, and this step serves as a seed for epitaxial growth of the single crystal silicon layer together with the material layer. 22. The electro-optical device according to claim 21, wherein 23. The active device and / or the passive device,
Being provided inside and / or outside the substrate recess due to the step formed on the first substrate and / or the film thereon.
The electro-optical device according to claim 21. 24. The electro-optical device according to claim 21, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. . 25. A step is formed on the one surface of the first substrate, a single crystal, polycrystalline or amorphous silicon layer is formed on the first substrate including the step, and the second The electro-optical device according to claim 9, wherein the thin film transistor has the single crystal, polycrystal, or amorphous silicon layer as a channel region, a source region, and a drain region, and has a gate portion above and / or below the channel region. 26. The step is formed as a recess whose side surface is perpendicular to the bottom surface or inclined toward the lower end in the cross section, and the step serves as a seed during epitaxial growth of the single crystal silicon layer. An electro-optical device according to claim 25. 27. The electro-optical device according to claim 25, wherein a source or drain electrode of the first and / or second thin film transistor is formed on a region including the step. 28. The method according to claim 25, wherein the second thin film transistor is provided inside and / or outside a substrate recess formed by the step formed on the first substrate and / or a film thereon. Electro-optical device. 29. The electro-optical device according to claim 25, wherein an impurity species of Group 3 or Group 5 and / or its concentration of the single crystal, polycrystal or amorphous silicon layer is controlled. 30. The electric device according to claim 25, wherein the step is formed along at least one side of an element region formed by the channel region, the source region, and the drain region of the second thin film transistor. Optical device. 31. The electro-optical device according to claim 25, wherein a gate electrode under the single crystal, polycrystal or amorphous silicon layer has a trapezoidal shape at a side end thereof. 32. The electro-optical device according to claim 25, wherein a diffusion barrier layer is provided between the first substrate and the single crystal, polycrystal, or amorphous silicon layer. 33. The electro-optical device according to claim 1, wherein the first substrate is a glass substrate or a heat-resistant organic substrate. 34. The electro-optical device according to claim 1, wherein the first substrate is optically opaque or transparent. 35. The electro-optical device according to claim 1, wherein the pixel electrode is provided for a reflective or transmissive display unit. 36. The electro-optical device according to claim 1, wherein the display section has a laminated structure of the pixel electrode and a color filter layer. 37. When the pixel electrode is a reflective electrode, irregularities are formed on the resin film, and the pixel electrode is provided thereon. When the pixel electrode is a transparent electrode, a transparent flattening film is used. 2. The electro-optical device according to claim 1, wherein the surface is flattened, and the pixel electrode is provided on the flattened surface. 38. The electro-optical device according to claim 8, wherein the display unit emits light or modulates light when driven by the switching element. 39. The electro-optical device according to claim 8, wherein a plurality of the pixel electrodes are arranged in a matrix on the display section, and the switching element is connected to each of the pixel electrodes. 40. The electro-optical device according to claim 1, configured as a liquid crystal display device, an electroluminescence display device, a field emission display device, a light emitting polymer display device, a light emitting diode display device, or the like. 41. A driving substrate for an electro-optical device, comprising: a display portion on which a pixel electrode is disposed; and a peripheral driving circuit portion disposed around the display portion on the substrate. A material layer having good lattice matching with a single crystal semiconductor such as single crystal silicon is formed on one surface, and a single crystal semiconductor layer such as a single crystal silicon layer is formed on the first substrate including the material layer. A driving substrate for an electro-optical device, wherein the single crystal semiconductor layer forms at least an active element of an active element and a passive element. 42. A top-gate first thin film transistor having the single crystal silicon layer as a channel region, a source region, and a drain region and having a gate portion above the channel region forms at least a part of the peripheral driver circuit portion. 42. The driving substrate for an electro-optical device according to claim 41, wherein the driving substrate is configured. 43. An insulating substrate is used as the substrate,
42. The material layer is formed of a material selected from the group consisting of sapphire, spinel structure, calcium fluoride, strontium fluoride, barium fluoride, boron phosphide, yttrium oxide and zirconium oxide.
4. A driving substrate for an electro-optical device according to claim 1. 44. The driving substrate for an electro-optical device according to claim 41, wherein an impurity species of Group 3 or Group 5 and / or its concentration of the single crystal silicon layer is controlled. 45. The driving substrate for an electro-optical device according to claim 41, wherein a diffusion barrier layer is provided between the substrate and the single crystal silicon layer. 46. The driving substrate for an electro-optical device according to claim 41, wherein the gate portion under the single-crystal silicon layer has a trapezoidal shape at a side end thereof. 47. In the peripheral driver circuit portion, in addition to the first thin film transistor, a polycrystalline or amorphous silicon layer is used as a channel region, and a top gate type and a bottom type having a gate portion above and / or below the channel region. 42. The electric device according to claim 41, wherein a gate, a dual-gate thin film transistor, or a diode, a resistor, a capacitor, an inductance element, or the like using the single crystal silicon layer, the polycrystalline silicon layer, or the amorphous silicon layer is provided. Driving substrate for optical devices. 48. The driving substrate for an electro-optical device according to claim 42, wherein a switching element for switching the pixel electrode in the display unit is provided on the substrate. 49. The first thin film transistor is at least a top gate type selected from a top gate type, a bottom gate type, and a dual gate type having a gate portion above and / or below a channel region, and 49. The driving substrate for an electro-optical device according to claim 48, wherein the switching element is the top gate type, the bottom gate type, or the dual gate type second thin film transistor. 50. The gate electrode provided below the channel region is made of a heat-resistant material.
9. The driving substrate for an electro-optical device according to 8. 51. The electro-optical device according to claim 49, wherein the thin film transistors of the peripheral driver circuit portion and the display portion constitute an n-channel, p-channel or complementary insulated gate field effect transistor. Drive board. 52. The thin film transistor of the peripheral driver circuit portion is formed of a set of a complementary type and an n-channel type, a set of a complementary type and a p-channel type, or a set of a complementary type, an n-channel type and a p-channel type. A driving substrate for an electro-optical device according to claim 51. 53. At least a part of the thin film transistor of the peripheral driver circuit section and / or the display section is an LDD (Li
ghtly doped drain) structure, and this LDD structure is a single type in which an LDD portion exists between a gate and a source or a drain, or a double type having an LDD portion between a gate and a source and a drain, A drive substrate for an electro-optical device according to claim 49. 54. The thin film transistor of the peripheral driver circuit portion and / or the display portion is configured as a single gate or a multi-gate, and in the case of a multi-gate, two or more branched same potentials in a channel region, or 50. The driving substrate for an electro-optical device according to claim 49, wherein the driving substrate has divided gate electrodes having different potentials or the same potential. 55. When the n or p channel type thin film transistor of the peripheral driver circuit portion and / or the display portion is of a dual gate type, an upper or lower gate electrode is electrically open or an arbitrary negative electrode is provided. Voltage (n
50. The driving substrate for an electro-optical device according to claim 49, to which a channel type) or a positive voltage (p-channel type) is applied to operate as a bottom gate type or top gate type thin film transistor. 56. When the thin film transistor of the peripheral driver circuit portion is the first n-channel, p-channel, or complementary thin film transistor, and the thin film transistor of the display portion uses a single crystal silicon layer as a channel region, n-channel type, p-channel type or complementary type; n-channel type, p-channel type or complementary type when the polycrystalline silicon layer is used as the channel region; n-channel type or p-type when the amorphous silicon layer is used as the channel region. The driving substrate for an electro-optical device according to claim 51, wherein the driving substrate is a channel type or a complementary type. 57. The method according to claim 41, wherein a step is formed on the substrate, the material layer is formed on the substrate including the step, and the single crystal silicon layer is formed on the material layer. Drive substrate for electro-optical devices. 58. The step is formed as a concave portion whose side surface is perpendicular to the bottom surface or inclined toward the lower end in the cross section, and this step serves as a seed for epitaxial growth of the single crystal silicon layer together with the material layer. The driving substrate for an electro-optical device according to claim 57, wherein the driving substrate is formed. 59. The method according to claim 58, wherein the first thin film transistor is provided inside and / or outside a substrate recess formed by the step formed on the substrate and / or a film thereon.
4. A driving substrate for an electro-optical device according to claim 1. 60. The electro-optical device according to claim 57, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. Drive board for 61. The driving substrate for an electro-optical device according to claim 41, wherein a step is formed in the material layer, and the single crystal silicon layer is formed on the material layer including the step. 62. The step is formed as a concave portion whose side surface is perpendicular to the bottom surface in the cross section or inclined toward the lower end, and this step serves as a seed for epitaxial growth of the single crystal silicon layer together with the material layer. 62. The driving substrate for an electro-optical device according to claim 61, wherein the driving substrate is formed. 63. The active device and / or the passive device,
62. The driving substrate for an electro-optical device according to claim 61, wherein the driving substrate is provided inside and / or outside of a substrate concave portion due to the step formed on the substrate and / or a film thereon. 64. The electro-optical device according to claim 61, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. Drive board for 65. A step is formed on the one surface of the substrate, a single crystal, polycrystalline or amorphous silicon layer is formed on the substrate including the step, and the second thin film transistor is 50. The driving substrate for an electro-optical device according to claim 49, wherein a polycrystalline or amorphous silicon layer is used as a channel region, a source region, and a drain region, and a gate portion is provided above and / or below the channel region. 66. The step is formed as a recess whose side surface is perpendicular to the bottom surface or inclined toward the lower end in the cross section, and the step serves as a seed during epitaxial growth of the single crystal silicon layer. A drive substrate for an electro-optical device according to claim 65. 67. The driving substrate for an electro-optical device according to claim 65, wherein a source or drain electrode of the first and / or second thin film transistor is formed on a region including the step. 68. The substrate according to claim 65, wherein the second thin film transistor is provided inside and / or outside of the substrate recess due to the step formed in the substrate and / or a film thereon.
4. A driving substrate for an electro-optical device according to claim 1. 69. The driving substrate for an electro-optical device according to claim 65, wherein an impurity species of Group 3 or Group 5 and / or its concentration of the single crystal, polycrystal or amorphous silicon layer is controlled. 70. The electric device according to claim 65, wherein the step is formed along at least one side of an element region formed by the channel region, the source region, and the drain region of the second thin film transistor. Driving substrate for optical devices. 71. The driving substrate for an electro-optical device according to claim 65, wherein a gate electrode under the single crystal, polycrystal or amorphous silicon layer has a trapezoidal shape at a side end thereof. 72. The driving substrate for an electro-optical device according to claim 65, wherein a diffusion barrier layer is provided between the substrate and the single crystal, polycrystalline or amorphous silicon layer. 73. The driving substrate for an electro-optical device according to claim 41, wherein the substrate is a glass substrate or a heat-resistant organic substrate. 74. The driving substrate for an electro-optical device according to claim 41, wherein the substrate is optically opaque or transparent. 75. The driving substrate for an electro-optical device according to claim 41, wherein the pixel electrode is provided for a reflective or transmissive display unit. 76. The driving substrate for an electro-optical device according to claim 41, wherein the display section has a laminated structure of the pixel electrode and a color filter layer. 77. When the pixel electrode is a reflective electrode, irregularities are formed on the resin film, and the pixel electrode is provided thereon. When the pixel electrode is a transparent electrode, a transparent flattening film is used. 42. The driving substrate for an electro-optical device according to claim 41, wherein the surface is flattened, and the pixel electrode is provided on the flattened surface. 78. The driving substrate for an electro-optical device according to claim 48, wherein the display section emits light or modulates light when driven by the switching element. 79. The driving substrate for an electro-optical device according to claim 48, wherein a plurality of the pixel electrodes are arranged in a matrix on the display section, and the switching element is connected to each of the pixel electrodes. . 80. A liquid crystal display, an electroluminescence display, a field emission display, a light emitting polymer display, a light emitting diode display, and the like.
A drive substrate for an electro-optical device according to claim 41. 81. A display section on which a pixel electrode is arranged, and a peripheral drive circuit section arranged around the display section are provided on a first substrate, and the first substrate, the second substrate, A method of manufacturing an electro-optical device having a predetermined optical material interposed therebetween, wherein a material layer having good lattice matching with a single crystal semiconductor such as single crystal silicon is formed on the one surface of the first substrate. And a step of heteroepitaxially growing a single crystal semiconductor layer such as a single crystal silicon layer on the first substrate including the material layer by using the material layer as a seed by a catalytic CVD method, a high-density plasma CVD method, or the like; Performing a predetermined process on the single crystal semiconductor layer to form at least the active element of the active element and the passive element. 82. After the growth of the single crystal silicon layer, performing a predetermined process on the single crystal silicon layer to form a channel region, a source region, and a drain region; and having a gate portion above the channel region. Forming a first top-gate thin film transistor that forms at least a part of the peripheral drive circuit section. 83. An insulating substrate is used as the first substrate, and the material layer is made of sapphire, spinel structure, calcium fluoride, strontium fluoride, barium fluoride,
The method for manufacturing an electro-optical device according to claim 81, wherein the electro-optical device is formed of a material selected from the group consisting of boron phosphide, yttrium oxide, and zirconium oxide. 84. The method according to claim 84, wherein the single crystal silicon layer has a thickness of 200 to 80.
The method for manufacturing an electro-optical device according to claim 81, wherein the method is performed at 0 ° C. 85. In forming the single-crystal silicon layer by the catalytic CVD method, a gas containing silicon hydride as a main component is brought into contact with a heated catalyst to decompose the first gas.
The method for manufacturing an electro-optical device according to claim 81, wherein the single-crystal silicon layer is deposited on the substrate. 86. Monosilane as the silicon hydride,
Using a silane-based gas such as disilane, trisilane and tetrasilane, as the catalyst, tungsten, tungsten containing thorium oxide, molybdenum, platinum, palladium, silicon, alumina, a metal-adhered ceramic, and a group consisting of silicon carbide The method for manufacturing an electro-optical device according to claim 85, wherein at least one selected material is used. 87. The single crystal silicon layer according to claim 81, wherein an impurity element belonging to Group 3 or Group 5 is mixed during the formation of the single crystal silicon layer, thereby controlling the impurity species and / or the concentration of the single crystal silicon layer. Of manufacturing an electro-optical device. 88. The method according to claim 81, wherein a diffusion barrier layer is formed on the first substrate, and the single crystal silicon layer is formed thereon. 89. The method of manufacturing an electro-optical device according to claim 81, wherein the gate portion under the single-crystal silicon layer has a trapezoidal shape at a side end thereof. 90. In the peripheral driver circuit portion, in addition to the first thin film transistor, a polycrystalline or amorphous silicon layer is used as a channel region, and a top gate type and a bottom type having a gate portion above and / or below the channel region. 82. The electro-optical device according to claim 81, wherein a gate, a dual-gate thin film transistor, or a diode, a resistor, a capacitance, an inductance element, or the like using the single crystal silicon layer, the polycrystalline silicon layer, or the amorphous silicon layer is provided. Production method. 91. The method of manufacturing an electro-optical device according to claim 82, wherein a switching element for switching the pixel electrode in the display section is provided on the first substrate. 92. The first thin film transistor is at least a top gate type selected from a top gate type, a bottom gate type, or a dual gate type having a gate portion above and / or below a channel region; and
The method for manufacturing an electro-optical device according to claim 91, wherein the top gate type, the bottom gate type, or the dual gate type second thin film transistor is formed as the switching element. 93. The method of manufacturing an electro-optical device according to claim 92, wherein a gate electrode provided below the channel region is formed of a heat-resistant material. 94. When the second thin film transistor is a bottom gate type or a dual gate type, a lower gate electrode made of a heat-resistant material is provided below the channel region, and a gate insulating film is formed on the gate electrode. 93. The manufacturing of the electro-optical device according to claim 92, wherein after forming the lower gate portion, the second thin film transistor is formed through a process common to the first thin film transistor including a process of forming the material layer. Method. 95. After forming the single-crystal silicon layer on the lower gate portion, introducing a Group 3 or Group 5 impurity element into the single-crystal silicon layer to form source and drain regions, The method for manufacturing an electro-optical device according to claim 94, wherein the process is performed. 96. After the formation of the single crystal silicon layer, each source and drain region of the second thin film transistor is formed by ion implantation of the impurity element using a resist as a mask, and the activation process is performed after the ion implantation. The method for manufacturing an electro-optical device according to claim 95, wherein an upper gate electrode of the second thin film transistor is formed after forming the gate insulating film. 97. When the second thin film transistor is a top gate type, after forming the single crystal silicon layer, each source and drain region of the second thin film transistor is formed by ion implantation of an impurity element using a resist as a mask; The method of manufacturing an electro-optical device according to claim 92, wherein an activation process is performed after the ion implantation, and thereafter, a gate portion including a gate insulating film and a gate electrode of the second thin film transistor is formed. 98. When the second thin film transistor is of a top gate type, a gate portion is formed by forming a gate insulating film of the second thin film transistor and a gate electrode made of a heat resistant material after forming the single crystal silicon layer. Then, using the gate portion as a mask, the source and drain regions of the first and second thin film transistors are formed by ion implantation of an impurity element, and an activation process is performed after the ion implantation.
A method for manufacturing an electro-optical device according to claim 92. 99. The method of manufacturing an electro-optical device according to claim 92, wherein an n-channel, p-channel or complementary insulated gate field-effect transistor is configured as the thin film transistor of the peripheral driver circuit portion and the display portion. 100. The thin film transistor of the peripheral drive circuit section is a set of a complementary type and an n-channel type,
A pair of channel type, or complementary type, n-channel type and p
100. The method of manufacturing an electro-optical device according to claim 99, wherein the electro-optical device is formed as a pair with a channel type. 101. At least a part of the thin film transistor of the peripheral driver circuit unit and / or the display unit is an LDD
(Lightly doped drain) structure, and the LDD structure is a single type having an LDD portion between a gate and a source or a drain, or a double type having an LDD portion between a gate and a source and a drain. Item 90. The method for manufacturing an electro-optical device according to Item 94. 102. The electro-optic device according to claim 101, wherein a resist mask used for forming the LDD structure is left, and ion implantation for forming a source region and a drain region is performed using a resist mask covering the resist mask. Device manufacturing method. 103. A single crystal, polycrystalline, or amorphous silicon layer is formed on one surface of the first substrate, and the single crystal, polycrystalline, or amorphous silicon layer is used as a channel region, a source region, and a drain region. 100. The method for manufacturing an electro-optical device according to claim 99, wherein the second thin film transistor having a gate portion at an upper portion and / or a lower portion thereof is formed. 104. When the thin film transistor of the peripheral driver circuit portion is the first thin film transistor of an n-channel type, a p-channel type, or a complementary type, and the thin film transistor of the display portion is a single-crystal silicon layer in a channel region, n Channel type, p-channel type or complementary type; n-channel type, p-channel type or complementary type when a polycrystalline silicon layer is used as a channel region; n when an amorphous silicon layer is used as a channel region
104. The method of manufacturing an electro-optical device according to claim 103, wherein the method is a channel type, a p-channel type, or a complementary type. 105. A step is formed on the first substrate,
Forming the material layer on the first substrate including the step, and forming the single crystal silicon layer on the material layer;
A method for manufacturing an electro-optical device according to claim 81. 106. The step is formed as a concave portion whose side surface is perpendicular to the bottom surface or inclined toward the lower end in the cross section, and the step is formed together with the material layer as a seed during epitaxial growth of the single crystal silicon layer. The method for manufacturing an electro-optical device according to claim 105, wherein 107. The first thin film transistor is provided in and / or outside a substrate recess due to the step formed in the first substrate and / or a film thereon.
5. The method for manufacturing an electro-optical device according to item 5. 108. The manufacturing of the electro-optical device according to claim 105, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. Method. 109. The method according to claim 81, wherein a step is formed in the material layer, and the single crystal silicon layer is formed on the material layer including the step. 110. The step is formed as a concave portion whose side surface is perpendicular to the bottom surface or inclined toward the lower end in the cross section, and the step is formed together with the material layer as a seed during epitaxial growth of the single crystal silicon layer. 110. The method for manufacturing an electro-optical device according to claim 109, wherein 111. The first thin film transistor is provided inside and / or outside a substrate recess due to the step formed on the first substrate and / or a film thereon.
9. The method for manufacturing an electro-optical device according to item 9. 112. The manufacturing of the electro-optical device according to claim 109, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. Method. 113. A step is formed on the one surface of the first substrate, and a single crystal, polycrystalline or amorphous silicon layer is formed on the first substrate including the step, and the single crystal, 114. The electro-optical device according to claim 113, wherein the second thin film transistor having a gate portion above and / or below the channel region is formed using a polycrystalline or amorphous silicon layer as a channel region, a source region, and a drain region. Production method. 114. The step is formed as a recess whose side surface is perpendicular to the bottom surface or inclined toward the lower end in a cross section, and the step is used as a seed during epitaxial growth of the single crystal silicon layer. 113. The method for manufacturing an electro-optical device according to 113. 115. The method of manufacturing an electro-optical device according to claim 113, wherein a source or drain electrode of said first and / or second thin film transistor is formed on a region including said step. 116. The method according to claim 11, wherein the second thin film transistor is provided in and / or outside a substrate recess formed by the step formed on the first substrate and / or a film thereon.
3. The method for manufacturing an electro-optical device according to item 3. 117. The method of manufacturing an electro-optical device according to claim 113, wherein an impurity species of Group 3 or Group 5 and / or its concentration of said single crystal, polycrystalline or amorphous silicon layer is controlled. 118. The electro-optical device according to claim 113, wherein the step is formed along at least one side of an element region formed by the channel region, the source region, and the drain region of the second thin film transistor. Manufacturing method. 119. The method of manufacturing an electro-optical device according to claim 113, wherein the gate electrode under the single crystal, polycrystal or amorphous silicon layer has a trapezoidal shape at a side end thereof. 120. The method of manufacturing an electro-optical device according to claim 113, wherein a diffusion barrier layer is provided between the first substrate and the single crystal, polycrystalline or amorphous silicon layer. 121. The method according to claim 81, wherein the first substrate is a glass substrate or a heat-resistant organic substrate. 122. The method according to claim 81, wherein the first substrate is optically opaque or transparent. 123. The method of manufacturing an electro-optical device according to claim 81, wherein said pixel electrode is provided for a reflective or transmissive display portion. 124. The method of manufacturing an electro-optical device according to claim 81, wherein a laminated structure of the pixel electrode and a color filter layer is provided in the display unit. 125. When the pixel electrode is a reflective electrode, unevenness is formed on a resin film, and a pixel electrode is provided thereon.
82. The method according to claim 81, wherein when the pixel electrode is a transparent electrode, the surface is flattened by a transparent flattening film, and the pixel electrode is provided on the flattened surface. 126. The method of manufacturing an electro-optical device according to claim 91, wherein said display section is configured to emit light or adjust light by being driven by said switching element. 127. The method of manufacturing an electro-optical device according to claim 91, wherein a plurality of said pixel electrodes are arranged in a matrix on said display section, and said switching element is connected to each of said pixel electrodes. 128. The method of manufacturing an electro-optical device according to claim 81, wherein the method is configured as a liquid crystal display, an electroluminescence display, a field emission display, a light emitting polymer display, a light emitting diode display, or the like. 129. A method of manufacturing a drive substrate for an electro-optical device, comprising: a display portion provided with a pixel electrode; and a peripheral drive circuit portion provided around the display portion on the substrate. Forming a material layer having good lattice matching with a single crystal semiconductor such as single crystal silicon on one surface; and forming the material layer on the substrate including the material layer by a catalytic CVD method or a high-density plasma CVD method. A step of heteroepitaxially growing a single crystal semiconductor layer such as a single crystal silicon layer using as a seed, and a step of performing a predetermined process on the single crystal semiconductor layer to form at least an active element of an active element and a passive element A method for manufacturing a drive substrate for an electro-optical device, comprising: 130. After growing the single-crystal silicon layer, performing a predetermined process on the single-crystal silicon layer to form a channel region, a source region, and a drain region; and forming a gate portion above the channel region. Forming a top-gate first thin film transistor that forms at least a part of the peripheral driver circuit portion.
130. The method of manufacturing a drive substrate for an electro-optical device according to claim 129. 131. An insulating substrate as the substrate, wherein the material layer is selected from the group consisting of sapphire, spinel structure, calcium fluoride, strontium fluoride, barium fluoride, boron phosphide, yttrium oxide and zirconium oxide. 129. The method for manufacturing a driving substrate for an electro-optical device according to claim 129, wherein the driving substrate is formed of a material that has been formed. 132. The single-crystal silicon layer is formed of 200 to 8
130. The method of manufacturing a driving substrate for an electro-optical device according to claim 129, wherein the driving substrate is formed at 00 ° C. 133. In forming the single-crystal silicon layer by the catalytic CVD method, a gas containing silicon hydride as a main component is brought into contact with a heated catalyst to be decomposed, and the single-crystal silicon layer is formed on the substrate. Depositing
10. The method for manufacturing a drive substrate for an electro-optical device according to item 9. 134. A silane-based gas such as monosilane, disilane, trisilane and tetrasilane is used as the silicon hydride, and tungsten, molybdenum, platinum containing thorium oxide is used as the catalyst.
135. The method of manufacturing a driving substrate for an electro-optical device according to claim 133, wherein at least one material selected from the group consisting of palladium, silicon, alumina, a ceramic to which a metal is attached, and silicon carbide is used. 135. A method for forming a single crystal silicon layer, comprising:
129. The method for manufacturing a driving substrate for an electro-optical device according to claim 129, wherein an impurity element and / or a concentration of the single crystal silicon layer is controlled by mixing an impurity element of group V or group V. 136. The method according to claim 129, wherein a diffusion barrier layer is formed on the substrate, and the single crystal silicon layer is formed on the diffusion barrier layer. 137. The method for manufacturing a driving substrate for an electro-optical device according to claim 129, wherein the gate portion below the single-crystal silicon layer has a trapezoidal shape at a side end thereof. 138. In the peripheral driver circuit portion, in addition to the first thin film transistor, a polycrystalline or amorphous silicon layer is used as a channel region, and a top gate type and a bottom portion having a gate portion above and / or below the channel region. 130. The electro-optical device according to claim 129, wherein a gate, a dual-gate thin film transistor, or a diode, a resistor, a capacitor, an inductance element, or the like using the single crystal silicon layer, the polycrystal silicon layer, or the amorphous silicon layer is provided. Method for manufacturing a drive substrate. 139. The method for manufacturing a driving substrate for an electro-optical device according to claim 130, wherein a switching element for switching the pixel electrode in the display unit is provided on the substrate. 140. The first thin film transistor is at least a top gate type selected from a top gate type, a bottom gate type, or a dual gate type having a gate portion above and / or below a channel region; and 139. The method for manufacturing a driving substrate for an electro-optical device according to claim 139, wherein the top gate type, the bottom gate type, or the dual gate type second thin film transistor is formed as the switching element. 141. The gate electrode provided below the channel region is made of a heat-resistant material.
3. A method for manufacturing a drive substrate for an electro-optical device according to claim 1. 142. When the second thin film transistor is a bottom gate type or a dual gate type, a lower gate electrode made of a heat-resistant material is provided below the channel region, and a gate insulating film is formed on the gate electrode. 140. The electro-optical device according to claim 140, wherein after forming the lower gate portion, the second thin film transistor is formed through a process common to the first thin film transistor including a process of forming the material layer. A method for manufacturing a drive substrate. 143. After forming the single-crystal silicon layer on the lower gate portion, introducing a Group 3 or Group 5 impurity element into the single-crystal silicon layer to form a source and drain region, 146. The method for manufacturing a drive substrate for an electro-optical device according to claim 142, wherein the process is performed. 144. After the formation of the single crystal silicon layer, each source and drain region of the second thin film transistor is formed by ion implantation of the impurity element using a resist as a mask, and the activation process is performed after the ion implantation.
146. The method according to claim 143, further comprising: forming an upper gate electrode of the second thin film transistor after forming the gate insulating film. 145. When the second thin film transistor is a top gate type, after forming the single crystal silicon layer, each source and drain region of the second thin film transistor is formed by ion implantation of an impurity element using a resist as a mask, 141. The method of manufacturing a driving substrate for an electro-optical device according to claim 140, wherein an activation process is performed after the ion implantation, and thereafter, a gate portion including a gate insulating film and a gate electrode of the second thin film transistor is formed. 146. When the second thin film transistor is a top gate type, a gate portion is formed by forming a gate insulating film of the second thin film transistor and a gate electrode made of a heat-resistant material after forming the single crystal silicon layer. 141. The electro-optical device according to claim 140, wherein the source and drain regions of the first and second thin film transistors are formed by ion implantation of an impurity element using the gate portion as a mask, and an activation process is performed after the ion implantation. A method for manufacturing a drive substrate for an apparatus. 147. The driving substrate for an electro-optical device according to claim 140, wherein an n-channel type, a p-channel type, or a complementary type insulated gate field effect transistor is configured as a thin film transistor of the peripheral driving circuit portion and the display portion. Manufacturing method. 148. The thin film transistor of the peripheral drive circuit section is a set of a complementary type and an n-channel type, and
A pair of channel type, or complementary type, n-channel type and p
148. The method for manufacturing a driving substrate for an electro-optical device according to claim 147, wherein the driving substrate is formed in a set with a channel type. 149. At least a part of the thin film transistor of the peripheral driver circuit unit and / or the display unit is an LDD.
(Lightly doped drain) structure, and the LDD structure is a single type having an LDD portion between a gate and a source or a drain, or a double type having an LDD portion between a gate and a source and a drain. 140. A method for manufacturing a drive substrate for an electro-optical device according to item 140. 150. The electro-optical device according to claim 149, wherein the resist mask used for forming the LDD structure is left, and ion implantation for forming a source region and a drain region is performed using a resist mask covering the resist mask. A method for manufacturing a drive substrate for an apparatus. 151. A single crystal, polycrystalline, or amorphous silicon layer is formed on one surface of the substrate, and the single crystal, polycrystalline, or amorphous silicon layer is used as a channel region, a source region, and a drain region. /
148. The method for manufacturing a driving substrate for an electro-optical device according to claim 147, wherein the second thin film transistor having a gate portion below is formed. 152. When the thin film transistor of the peripheral driver circuit portion is the n-channel, p-channel, or complementary first thin film transistor, and the thin film transistor of the display portion is a single crystal silicon layer in a channel region, n is used. Channel type, p-channel type or complementary type; n-channel type, p-channel type or complementary type when a polycrystalline silicon layer is used as a channel region; n when an amorphous silicon layer is used as a channel region
The method for manufacturing a driving substrate for an electro-optical device according to claim 151, wherein the driving substrate is a channel type, a p-channel type, or a complementary type. 153. The electric device according to claim 129, wherein a step is formed on the substrate, the material layer is formed on the substrate including the step, and the single crystal silicon layer is formed on the material layer. A method for manufacturing a drive substrate for an optical device. 154. In the cross section, the step is formed as a concave portion such that the side surface is perpendicular to the bottom surface or inclined toward the lower end, and the step is formed together with the material layer as a seed during epitaxial growth of the single crystal silicon layer. 153. The method for manufacturing a drive substrate for an electro-optical device according to claim 153. 155. The driving device for an electro-optical device according to claim 153, wherein the first thin film transistor is provided in and / or outside a concave portion of the substrate due to the step formed in the substrate and / or a film thereon. Substrate manufacturing method. 156. The electro-optical device according to claim 153, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. A method for manufacturing a drive substrate. 157. The method for manufacturing a driving substrate for an electro-optical device according to claim 129, wherein a step is formed in the material layer, and the single crystal silicon layer is formed on the material layer including the step. 158. In the cross section, the step is formed as a concave portion whose side surface is perpendicular to the bottom surface or inclined toward the lower end, and the step is formed together with the material layer as a seed during epitaxial growth of the single crystal silicon layer. 157. The method for manufacturing a drive substrate for an electro-optical device according to claim 157. 159. The driving substrate for an electro-optical device according to claim 157, wherein the first thin film transistor is provided inside and / or outside a substrate recess formed by the step formed on the substrate and / or a film thereon. Manufacturing method. 160. The electro-optical device according to claim 157, wherein the step is formed along at least one side of an element region formed by a channel region, a source region, and a drain region of the thin film transistor as the active element. A method for manufacturing a drive substrate. 161. A step is formed on the one surface of the substrate, and a single crystal, polycrystal or amorphous silicon layer is formed on the substrate including the step, and the single crystal, polycrystal or amorphous silicon layer is formed. 152. The method for manufacturing a driving substrate for an electro-optical device according to claim 151, wherein the second thin film transistor having a gate portion above and / or below the channel region is formed as a channel region, a source region, and a drain region. . 162. The step is formed as a concave part whose side surface is perpendicular to the bottom surface or inclined toward the lower end in the cross section, and the step is used as a seed during epitaxial growth of the single crystal silicon layer. 161. A method for manufacturing a drive substrate for an electro-optical device according to item 161. 163. The method for manufacturing a driving substrate for an electro-optical device according to claim 161, wherein a source or drain electrode of said first and / or second thin film transistor is formed on a region including said step. 164. The drive for an electro-optical device according to claim 161, wherein the second thin film transistor is provided inside and / or outside a substrate recess due to the step formed in the substrate and / or a film thereon. Substrate manufacturing method. 165. The method for manufacturing a driving substrate for an electro-optical device according to claim 161, wherein the type of impurity of Group 3 or Group 5 and / or the concentration of the single crystal, polycrystalline or amorphous silicon layer is controlled. 166. The electro-optical device according to claim 161, wherein the step is formed along at least one side of an element region formed by the channel region, the source region, and the drain region of the second thin film transistor. Of manufacturing a driving substrate for a semiconductor device. 167. The method of manufacturing a driving substrate for an electro-optical device according to claim 161, wherein the gate electrode under the single crystal, polycrystal or amorphous silicon layer has a trapezoidal shape at a side end thereof. 168. The method according to claim 161, wherein a diffusion barrier layer is provided between the substrate and the single crystal, polycrystalline or amorphous silicon layer. 169. The method according to claim 129, wherein the substrate is a glass substrate or a heat-resistant organic substrate. 170. The method according to claim 129, wherein the substrate is optically opaque or transparent. 171. The method according to claim 129, wherein the pixel electrode is provided for a reflective or transmissive display unit. 172. The method for manufacturing a driving substrate for an electro-optical device according to claim 129, wherein a stacked structure of the pixel electrode and a color filter layer is provided in the display unit. 173. When the pixel electrode is a reflective electrode, unevenness is formed on a resin film, and a pixel electrode is provided thereon.
130. The method of manufacturing a driving substrate for an electro-optical device according to claim 129, wherein when the pixel electrode is a transparent electrode, the surface is flattened by a transparent flattening film, and the pixel electrode is provided on the flattened surface. . 174. The method for manufacturing a drive substrate for an electro-optical device according to claim 139, wherein the display section is configured to emit light or adjust light by being driven by the switching element. 175. The manufacturing method according to claim 139, wherein the plurality of pixel electrodes are arranged in a matrix on the display section, and the switching elements are connected to each of the pixel electrodes. Method. 176. A liquid crystal display device, an electroluminescence display device, a field emission display device, a light emitting polymer display device, a light emitting diode display device, etc.
130. The method of manufacturing a drive substrate for an electro-optical device according to claim 129.