JP2000174203A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) Abstract: A semiconductor device having a low thermal resistance, a wide safe operation area, a maximum use of the electrical characteristics of the semiconductor device, and a large semiconductor device and / or a plurality thereof. A highly productive semiconductor device and a method for manufacturing the same, which can mount the element described above and eliminate the need for expensive sealing equipment and sealing dies. A semiconductor device includes a first metal plate including at least one pattern-formed element mounting portion and a plurality of terminal leads; and a second metal plate having either a plate shape or an uneven shape. And a resin layer having a high thermal conductivity disposed between the first metal plate and the second metal plate, wherein the first metal plate is provided on the element mounting portion. Embedded in the resin layer such that the upper surface and the upper surface of the at least one terminal lead and the upper surface of the resin layer are flush with each other;
The resin layer; at least one semiconductor element mounted on the upper surface of the element mounting portion; a metal wire for electrically connecting the terminal lead to the semiconductor element; the semiconductor element; and the metal wire And a potting resin for embedding at least a part of the terminal lead therein.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a semiconductor element and a method of manufacturing the same, and more particularly to a package structure thereof.

[0002]

2. Description of the Related Art A shift from a conventionally used relay component to a switching element such as a MOSFET has been progressing mainly on a power supply component and its related components. this is,
This is because switching elements are more energy-saving and lower in price than relay parts. Conventional semiconductor devices used for such power supply components and related components include the following devices.

FIGS. 8A and 8B and FIG. 9 show examples of the configuration of a conventional semiconductor device. FIG. 8A is a perspective view of a conventional semiconductor device 800, and FIG.
It is sectional drawing which followed the -A 'line. FIG. 9 is a perspective view of another conventional semiconductor device 900, and shows a conventional semiconductor device 80.
0 is provided therein.

As shown in FIGS. 8 (a) and 8 (b), a semiconductor element 85 is provided on a semiconductor element mounting portion 81a which is a part of a lead frame (metal plate) 81 made of a copper plate. (Not shown). The semiconductor element 85 is electrically connected to a terminal lead 81b for extracting a current to the outside with a metal wire 86 such as an aluminum wire. Here, the terminal lead 81b is a part of the lead frame 81 and is formed integrally with the semiconductor element mounting portion 81a. The semiconductor element mounting portion 81a of the lead frame 81, the semiconductor element 85, and the metal wire 86
The semiconductor device 800 is molded by transfer molding with an epoxy resin 87 so as to bury the terminal lead 81b and part of the terminal lead 81b.

Generally, the semiconductor element mounting portion 81a of the lead frame 81 has a plate thickness larger than that of the terminal lead 81b in order to reduce transient thermal resistance. That is,
A so-called “stepped lead frame” is used as the lead frame 81 of the semiconductor device 800. Also,
A surface (hereinafter, referred to as a “lower surface”) of the semiconductor device mounting portion 81 a of the lead frame 81 on a side opposite to a side on which the device is mounted is
It is entirely covered with an epoxy resin 87 having a thickness of 0.4 to 0.5 mm and is insulated from the outside.

[0006] Such a semiconductor device 800 is suitable for handling small to medium currents, and is often used independently of the semiconductor element portion, that is, used alone. On the other hand, when handling a large current, the semiconductor device 90 shown in FIG.
0 is known to be suitable.

As shown in FIG. 9, a conventional semiconductor device 90
In the case of No. 0, a plurality of the above-described semiconductor devices 800 are provided on the aluminum heat sink 83. Here, each semiconductor device 8
00 is fixed by a screw 92 that passes through a washer 90, a semiconductor device 800, and a thread cut 91 provided on an aluminum heat sink 83 in this order. Semiconductor device 80
Silicon grease 93 is applied between the heat dissipation plate 83 and the aluminum heat dissipation plate 83 to improve the thermal conductivity from the semiconductor device 800 to the aluminum heat dissipation plate 83. Note that FIG. 9 shows a partial exploded view in which one semiconductor device 800 is not fixed with screws 92 to facilitate understanding.
With such a configuration, in the semiconductor device 900,
The heat capacity and the heat dissipation can be improved as compared with the case where the semiconductor device 800 is used alone.

[0008]

In the conventional semiconductor device as described above, the epoxy resin burying the lower surface of the semiconductor element mounting portion of the lead frame is entirely composed of the semiconductor element and the semiconductor element mounting portion. It is formed simultaneously with resin sealing. As shown in FIG. 9, the resin disposed between the lower surface of the lead frame and the aluminum radiator plate has high thermal conductivity in order to conduct and radiate the heat generated by the semiconductor element to the aluminum radiator plate. Need sex. For this reason,
As the sealing resin, it is necessary to select a resin having a high thermal conductivity and a composition within a range that allows easy molding. Therefore, there is a limit to the use of a conventional semiconductor device under conditions of a large current and a high load. In addition, since the standard size of the package is predetermined, it is difficult to accommodate a large semiconductor element and / or a plurality of elements in one package. Furthermore, in order to manufacture a conventional semiconductor device, it is necessary to seal an element with a resin, so that expensive sealing equipment and a sealing die used for this are required.

Therefore, in the conventional semiconductor device package, the composition range of the sealing resin is restricted by the thermal conductivity as an index to the safe operation area of the device, and a large semiconductor device and / or a plurality of devices can be used in one package. There was a problem that it was difficult to put in one package. Further, in order to manufacture a conventional semiconductor device, it is necessary to seal an element with a resin, so that sealing equipment and a sealing die are required.
Further, at this time, various sealing dies are required depending on the thickness of the metal plate (in this case, the lead frame). This is a factor that hinders cost reduction of the semiconductor device.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor device having a low thermal resistance and a wide safe operation area. Electric characteristics can be used to the maximum,
To provide a highly productive semiconductor device capable of mounting a large semiconductor element and / or a plurality of semiconductor elements and eliminating the need for expensive sealing equipment and sealing dies, and a method of manufacturing the same. It is in.

[0011]

According to the present invention, there is provided a semiconductor device comprising:
A first metal plate including at least one patterned element mounting portion and a plurality of terminal leads; a second metal plate having any of a plate shape and an uneven shape;
And a resin layer having a predetermined thermal conductivity disposed between the second metal plate and the first metal plate,
The resin layer embedded in the resin layer such that the upper surface of the element mounting portion and the upper surfaces of the at least one terminal lead and the upper surface of the resin layer are located on the same plane; At least one semiconductor element mounted on the upper surface of the mounting portion; a metal wire for electrically connecting the terminal lead to the semiconductor element; and at least one semiconductor element;
And a potting resin for embedding a part of the terminal lead of the book therein, thereby solving the above-mentioned problem.

The second metal plate includes a first metal portion including at least the resin layer, the first metal plate, the semiconductor element, the metal wire, and the potting resin.
The semiconductor device may include a second metal portion extending from the first metal portion, and the semiconductor element may be accommodated between the first metal portion and the second metal portion facing each other.

The second metal part includes at least the resin layer, the first metal plate, the semiconductor element, the metal wire, and the potting resin on a surface facing the first metal part. May be.

The first metal part and the second metal part are connected by a plurality of third metal plates, and the third metal plate is connected to the upper surface of the third metal plate by the resin. It may be embedded in the resin layer so that the upper surface of the layer is flush with the upper surface.

[0015] The semiconductor device of the present invention comprises the third metal plate, the semiconductor element provided on the first metal part, and the semiconductor element provided on the second metal part.
The semiconductor device further includes a metal line electrically connected to each other, whereby the semiconductor element disposed on the first metal part and the semiconductor element disposed on the second metal part have the same potential. You may have.

According to the present invention, since the resin layer having high thermal conductivity is provided between the first metal plate and the second metal plate, the heat resistance of the semiconductor element can be effectively reduced. It is possible to widen the safe operation area by lowering it. further,
According to the present invention, since the semiconductor element, the metal wire, and at least a part of at least one terminal lead are embedded in the potting resin, expensive sealing equipment and a sealing mold are not required. Thus, the productivity of the semiconductor device can be improved. Furthermore, by using such resin sealing,
The degree of freedom in circuit design can be improved, so that even a semiconductor device of a size other than the standard size can be used.
Since packaging can be easily performed, a large-sized semiconductor element and / or a plurality of semiconductor elements can be easily mounted.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First to seventh embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) A first embodiment of the present invention will be described with reference to FIGS. 1 (a) and 1 (b). FIG. 1A is a perspective view illustrating a configuration of a semiconductor device 100 according to the present embodiment, and FIG. 1B is a cross-sectional view taken along line AA ′ of FIG.

Referring to FIGS. 1A and 1B, in a semiconductor device 100, a first metal plate (copper plate) 1 having a thickness of about 0.5 mm is embedded in a resin layer 2. ,
The upper surface (exposed surface) of the first metal plate 1 is flush with the upper surface of the resin layer 2. The first metal plate 1 includes a plurality of semiconductor element mounting portions (hereinafter, simply referred to as “element mounting portions”) 1a and a plurality of terminal leads 1b. One element mounting part 1a
And a three-terminal shape including three leads 1b arranged in parallel, as one set of basic semiconductor element portions, and four sets of basic semiconductor element portions are arranged in parallel. Here, the three leads 1b constituting one set of the basic semiconductor element portion include one lead directly drawn out from one element mounting portion 1a,
The two leads separated from the component mounting part on the left and right of this one lead
And one lead.

The resin layer 2 has a second metal plate on a surface (ie, a lower surface) opposite to the side on which the first metal plate is provided. The resin layer 2 contains about 70% by weight of a filler having high thermal conductivity such as aluminum oxide and aluminum nitride.
A "green sheet" of epoxy resin, which is densely filled with about 95% by weight, is heat-molded under pressure. The second metal plate 3 is a metal plate made of aluminum or the like, which is equal to or slightly larger than the resin layer 2, and has fins on the back surface for enhancing a heat radiation effect.

A copper heat spreader 4 is mounted on the upper surface of the element mounting portion 1a by a medium-temperature solder (not shown). A semiconductor element 5 is mounted on the upper surface of the copper heat spreader 4 with a metal such as a high-temperature solder. The semiconductor element 5 and the terminal lead 1b are electrically connected by a metal wire 6 such as an aluminum wire. A semiconductor element 5, a metal wire 6, and at least one terminal lead 1
A part of b is embedded in a potting resin 7 (not shown in FIG. 1A) such as an epoxy resin or a silicone resin having a high thixotropic property, and is protected from the outside.

Next, a method of manufacturing the semiconductor device 100 will be described.

First, a metal plate 1 is formed by punching a copper plate having a thickness of about 0.5 mm and patterning a plurality of element mounting portions 1a and a plurality of terminal leads 1b. Here, at least one set of terminal leads 1b are connected to each other by tie bars (not shown) formed by punching at the same time. This first metal plate 1 is
A green sheet 2 (which will later become a resin layer 2) made of an epoxy resin filled with a filler having a high thermal conductivity such as aluminum oxide and aluminum nitride at a high density of about 70% to about 95% by weight is sandwiched. The second metal plate 3
On top of. Then, about 10 to about 200 kg / cm
² is applied to the first metal plate 1 to process the upper surface of the first metal plate 1 and the upper surface of the green sheet 2 so as to be located on the same plane, and heat-mold these to heat the green sheet 2. The resin layer 2 is formed by curing.

On the other hand, the semiconductor element 5 is previously mounted on the upper surface of the copper heat spreader 4 whose surface is Ni-plated by high-temperature solder (not shown). The reason is that when the semiconductor element 5 is mounted on the upper surface of the copper heat spreader 4,
Use high-temperature solder having a melting point of 300 ° C or more,
The green sheet 2 (which will later become the resin layer 2) has a thickness of 300
At a high temperature of not less than ° C., the resin contained in the green sheet is decomposed, so that it cannot withstand high-temperature treatment. Therefore, it is necessary to attach the semiconductor element 5 to the copper heat spreader 4 in advance to avoid exposing the green sheet 2 to a high temperature. Still another reason is that the semiconductor device 100 has high repairability when a plurality of semiconductor elements 5 are mounted (that is, it is necessary to remove only a specific semiconductor element among individual semiconductor elements as necessary). Is possible).

Next, the copper heat spreader 4 on which the semiconductor element 5 is mounted is attached to the element mounting portion 1a of the metal plate 1 with a metal such as a medium-temperature solder. Then, the semiconductor element 5 and the lead 1 b of the metal plate 1 are electrically connected by the metal wire 6. Thereafter, the semiconductor element 5, the metal wire 6, and the at least one terminal lead 1b are potted and sealed with a potting resin 7 (not shown in FIG. 1A) to protect them from the outside. In the present invention, molding by a mold such as transfer sealing is not performed.

Thereafter, a tie bar (not shown) of the metal plate 1 is used.
And the semiconductor device 100 is completed.

The first metal plate 1 is not limited to a copper plate, but may be a copper plate surface-treated by Ni plating or the like. The thickness of the first metal plate 1 is not limited to the above-described thickness, and may be any thickness as long as the element mounting portion and the terminal lead portion can be formed. When the thickness of the first metal plate 1 is changed, the thickness of the resin layer 2 is complementarily changed and adjusted, so that another manufacturing facility is not required and the specification can be easily changed. It is possible to respond.

The number of semiconductor elements 5 placed on the copper heat spreader 4 can be freely selected according to the use of the product and the specifications of the assembly equipment.

The material of the second metal plate 3 is not limited to aluminum, and a similar heat radiation effect can be obtained with iron and / or copper. Further, the shape of the second metal plate is not limited to the concavo-convex shape (provided with the fins on the back surface), but may be a plate shape, and may be selected according to the heat value of the semiconductor element used.

According to the present embodiment, heat generated by the semiconductor element 5 can be effectively radiated from the second metal plate 3 having high heat dissipation through the resin layer 2 having high heat conductivity. Thereby, the thermal resistance of the semiconductor element can be reduced, and the safe operation area of the semiconductor element can be widened. Furthermore, due to the effect of lowering the thermal resistance of the semiconductor element,
It is possible to provide a semiconductor device with a large semiconductor element and / or a plurality of elements which have not been possible in the past.

Further, according to the present invention, since the first metal plate, the green sheet of the epoxy resin, and the second metal plate are superposed and pressed and heated, the first metal plate is used. Even if the thickness of the metal plate is changed, the thickness of the green sheet (resin layer) 2 is changed by complementarily changing the thickness, so that another manufacturing facility is not required and the specification can be easily changed. It is possible to respond. In addition, since potting sealing is used as the resin sealing, expensive equipment and molds are not required, and manufacturing costs can be reduced.

(Second Embodiment) A second embodiment according to the present invention will be described with reference to FIGS. 2 (a) and 2 (b). This embodiment is obtained by modifying the shape of the resin layer in the first embodiment and adding a step of separating the resin layer into individual semiconductor devices. FIGS. 2A and 2B are process perspective views illustrating a method for manufacturing the semiconductor device 200 of the present embodiment. Note that the same components as those in the above embodiment are denoted by the same reference numerals.

The semiconductor device 200 of this embodiment is manufactured by using the same method as that of the semiconductor device 100 of the first embodiment. Here, the description of the same configuration and manufacturing method as those of the semiconductor device 100 of the first embodiment will be omitted, and the following description will focus on the differences.

As shown in FIG. 2A, in the manufacturing method according to the first embodiment, the green sheet 2 is patterned into an island shape, and the green sheet 2 is formed on the resin layer 2 between the basic semiconductor element portions. A semiconductor device is manufactured in the same manner as in the first embodiment except that three separation parts 8 are provided symmetrically for each basic semiconductor element. Here, the pitch of four sets of basic semiconductor elements arranged in parallel, that is, the width w of one set of basic semiconductor elements is about 16.5 mm, and the width (adjacent minimum distance) d of the groove 8 is about 4 mm. It is.

According to the manufacturing method of the first embodiment, the semiconductor element 5 and the metal wire 6 are formed with a potting resin (not shown).
And at least one terminal lead 1b is sealed,
Near the center of the separation unit 8, the second metal plate 3 is cut with a cutter or a saw to separate the semiconductor device into individual semiconductor devices. Finally, three (one set) terminal leads 1b
Tie bar (not shown) connecting the
The semiconductor device 200 shown in (b) is completed.

According to the present embodiment, it is possible to reduce the manufacturing cost of a single semiconductor device having a large safe operation area of a semiconductor element and a large element and / or a plurality of elements mounted thereon. Further, as in the first embodiment, since potting sealing is used as the resin sealing, expensive equipment and a mold are not required, and the manufacturing cost can be reduced.

(Third Embodiment) A third embodiment according to the present invention will be described with reference to FIGS. 3 (a) and 3 (b). This embodiment is a modification of the second embodiment, in which the step of separating into individual semiconductor devices is modified. FIG. 3 (a)
7A is a process perspective view illustrating a method for manufacturing a semiconductor device of the present embodiment, and FIG. 7B is a process perspective view illustrating a modification of the present embodiment. Note that the same components as those in the above embodiment are denoted by the same reference numerals.

The semiconductor device (not shown) of this embodiment is
The semiconductor device 200 is manufactured using the same method as that of the semiconductor device 200 according to the second embodiment. Here, the description of the same configuration and manufacturing method as those of the semiconductor device 200 of the second embodiment will be omitted, and the following description will focus on the differences.

In this embodiment, as shown in FIG. 3A, a second metal plate 3 having a plate-like shape in advance is used. Here, at a predetermined cut portion of the second metal plate 3, a hole row 9 for reducing the bending strength is provided in advance. When the hole row 9 is provided along the cutting line, round holes having a hole diameter of about 1 mm are arranged in a line along the cutting line at a hole interval of about 1.5 mm. On the other hand, when the groove 10 is provided along the cutting line, the width is about 0.5 mm and the thickness of the second metal plate 3 is about 2 mm.
A groove having a depth of / 3 is provided linearly.

Using this second substrate 3, in the same manner as in the second embodiment, a semiconductor element 5, a metal wire 6, and at least one terminal lead 1b are formed with a potting resin (not shown).
After being sealed, the semiconductor devices are separated into individual semiconductor devices by bending using a simple jig without using a means such as a cutter or a saw. Finally, the tie bars fixing the three (one set) terminal leads 1b are cut in the same manner as in the second embodiment, and a semiconductor device (not shown) is completed.

When the second metal plate 3 has a plate-like shape as in this embodiment, a round hole penetrating the plate is provided. On the other hand, when the second metal plate 3 is provided with a radiation fin or the like on the back surface and has an uneven shape, a round hole penetrating the three surfaces of the radiation fin is provided. In any case, when the semiconductor device is separated into individual semiconductor devices, the remaining (connected) portion is cut by using a jig to press only the round hole portion.

Alternatively, instead of the hole row 9, FIG.
As shown in (1), the groove 10 may be provided in the second metal plate 3 in advance. Also in this case, the semiconductor device can be separated into individual semiconductor devices by the same operation as in the case where the hole row 9 is provided.

According to this embodiment, since the second metal plate is provided with a row of holes or grooves, the second metal plate can be bent by a simple jig without using equipment such as a cutting machine or a saw. The semiconductor device can be separated into individual semiconductor devices, whereby the manufacturing cost can be reduced.

(Fourth Embodiment) A fourth embodiment according to the present invention will be described with reference to FIGS. 4A and 4B. This embodiment is obtained by modifying the shape of the second metal plate in the first embodiment and adding a step of bending the second metal plate. FIGS. 4A (a) and 4 (b) are continuous process perspective views illustrating the method for manufacturing the semiconductor device 400 of the present embodiment. FIG. 4B is a sectional view taken along line AA ′ of FIG. 4A. Note that the same components as those in the above embodiment are denoted by the same reference numerals.

The semiconductor device 400 of this embodiment is manufactured by using the same method as that of the semiconductor device 100 of the first embodiment. Here, the description of the same configuration and manufacturing method as those of the semiconductor device 100 of the first embodiment will be omitted, and the following description will focus on the differences.

In the present embodiment, as shown in FIG.
A second metal plate 3 having twice the area in advance is used.

As shown in FIG. 4A, a semiconductor device is manufactured in the same manner as in the first embodiment. Here, the second metal plate 3 extends from the right portion 3a in a direction opposite to the direction in which the terminal leads 1b extend, with the metal portion (first metal portion) 3a on which the resin layer is disposed. Metal part that was released (second metal part)
3b. These metal parts 3a and 3b have substantially the same area, and the metal part 3b is provided with a groove 11 having a width of about 1 cm.

According to the manufacturing method of the first embodiment, the semiconductor element 5 and the metal wire 6 are formed with a potting resin (not shown).
And at least one terminal lead 1b is sealed, and then a tie bar connecting the plurality of terminal leads 1b is cut off. Then, the metal part 3b of the second metal plate 3 is The metal part 3a is bent so that the surface on the side on which the semiconductor element 5 is mounted faces the metal part 3b.
The semiconductor device 400 shown in FIGS. 4A (b) and 4B is manufactured. A simple jig or press machine can be used for the bending.

Although the present embodiment has described the structure in which the second metal plate is provided with the groove, the present embodiment is not limited to this. That is, if the second metal plate can be bent to accommodate the semiconductor element inside the opposing second metal plate, it is not necessary to provide a groove in the second metal plate. Further, the shape of the second metal plate is not limited to a plate shape, but may be an uneven shape (provided with fins on the back surface), and may be selected according to the heat value of the semiconductor element to be used.

According to the present embodiment, since the second metal plate is bent and opposed so that the semiconductor element is housed inside, the danger of external force being applied to the semiconductor element can be avoided. This has the effect of protecting the semiconductor element from the outside. Further, since the second metal plate is bent as described above, the semiconductor device of the present embodiment can be mounted on another printed wiring board by itself. Further, since the effective area of the second metal plate is approximately doubled, the heat radiation effect of the semiconductor element can be greatly improved.

(Fifth Embodiment) A fifth embodiment according to the present invention will be described with reference to FIGS. 5A and 5B. In the present embodiment, a semiconductor element is also mounted on an extended portion (second metal portion) of the second metal plate in the fourth embodiment. FIGS. 5A (a) and 5 (b) are continuous process perspective views illustrating the method for manufacturing the semiconductor device 500 of the present embodiment. FIG. 5B is a sectional view taken along line AA ′ of FIG. 5A. Note that the same components as those in the above embodiment are denoted by the same reference numerals.

The semiconductor device 500 of this embodiment is manufactured by using the same method as that of the semiconductor device 400 of the fourth embodiment. Here, the description of the same configuration and manufacturing method as those of the semiconductor device 400 of the fourth embodiment will be omitted, and the following description will focus on the differences.

As shown in FIG. 5A (a), like the metal portion (first metal portion) 3a of the second metal plate 3, the resin layer 2
And the first metal plate 1 (the plurality of semiconductor element mounting portions 1a and the plurality of terminal leads 1b), the copper spreader 4, the semiconductor element 5, the metal wires 6, and the potting resin 7 are connected to the metal portion ( The second metal part) 3b is also provided at the same time. This allows
The semiconductor device 500 shown in FIGS. 5A (b) and 5B may have a symmetric structure with the groove 11 interposed therebetween.

According to the present embodiment, the same effects as in the fourth embodiment can be obtained. Furthermore, according to the present embodiment, the first metal plate can be disposed facing the second metal plate, and can be mounted on another printed wiring board in this shape, so that the mounting density is approximately doubled. Can be done.

(Sixth Embodiment) A sixth embodiment according to the present invention will be described with reference to FIGS. 6 (a) and 6 (b). This embodiment is different from the first embodiment in that two semiconductor devices are manufactured and connected by a third metal plate.
A step of bending a third metal plate is added. 6A and 6B are continuous process perspective views illustrating the method for manufacturing the semiconductor device 600 of the present embodiment. Note that the same components as those in the above embodiment are denoted by the same reference numerals.

The semiconductor device 600 of this embodiment is manufactured by using the same method as the semiconductor device 100 of the first embodiment. Here, the description of the same configuration and manufacturing method as those of the semiconductor device 100 of the first embodiment will be omitted, and the following description will focus on the differences.

In the present embodiment, as shown in FIG. 6A, a slightly larger second metal plate having a plate-like shape and having a shape projecting from the resin layer 2 by about 1 cm to about 3 cm in advance. 3 is used.

As shown in FIG. 4A, two semiconductor devices of the first embodiment are simultaneously manufactured in the same manner as in the first embodiment. Here, the third metal plate 12 includes two resin layers 2
Are connected. The third metal plate comprises a plurality of bar-shaped metal plates obtained by stamping a copper plate having a thickness of about 0.5 mm. The third metal plate 12 may be stamped at the same time as the first metal plate 1.

More specifically, in the step of arranging the first metal plate 1 on the second metal plate 3 with the green sheet 2 interposed therebetween, the two first metal plates 1 are connected to the respective terminal leads. 1b is disposed on the second metal plate 3 with the green sheet 2 interposed therebetween such that the first metal plate 1b faces the opposite side, and the third metal plate 12 is placed at a constant interval between the two second metal plates. It is disposed on the second metal plate 3 with the green sheet 2 interposed therebetween and on the side of the first metal plate 1 so as to be connected. Then, a pressure of about 10 kg / cm ^{2 to} about 200 kg / cm ² is applied to the first metal plate 1 and the third metal plate 12 so that the upper surfaces of the first metal plate 1 and the third metal plate 12 and the upper surface of the green sheet 2 are separated. The resin layer 2 is formed by processing them so as to be located on the same plane, heat-forming them, and thermosetting the green sheet 2. Then, according to the manufacturing method of the first embodiment, a potting resin (not shown)
Then, the semiconductor element 5, the metal wire 6, and a part of at least one terminal lead 1b are sealed, and then a tie bar connecting the plurality of terminal leads 1b is cut off. Then the third
Is bent so that the surface of the metal portion 3a on which the semiconductor element 5 is mounted and the surface of the metal portion 3b on which the semiconductor element 5 is mounted face each other. The semiconductor device 600 shown in FIG. A simple jig or press machine can be used for the bending.

In this embodiment, the method and the structure in which the third metal plate is pressed simultaneously with the first metal plate and embedded in the resin layer 2 have been described, but this embodiment is not limited to this. . That is, the third metal plate may be formed in any manner as long as the third metal plate can be bent and the semiconductor element can be accommodated inside the opposing second metal plate. Further, as the shape of the second metal plate,
Not limited to plate shape, uneven shape (fins are provided on the back)
May be selected according to the calorific value of the semiconductor element to be used.

According to this embodiment, since the third metal plate is bent so that the semiconductor element is housed inside the opposing second metal plate, there is a danger that an external force is applied to the semiconductor element. There is an effect that the semiconductor element is protected from the outside by avoiding the performance. Further, since the third metal plate is bent as described above, the semiconductor device of the present embodiment can be mounted on another printed wiring board by itself. In addition, the first metal plate can be disposed facing the second metal plate, and can be mounted on another printed wiring board in this shape, so that the mounting density can be approximately doubled. Further, since the third metal plate is bent, the shape (plate shape or unevenness) and thickness of the second metal plate are smaller than those of the semiconductor device of Embodiment 5 in which the second metal plate is bent. It can be easily bent without dependence.

(Seventh Embodiment) A seventh embodiment according to the present invention will be described with reference to FIGS. 7 (a) and 7 (b). In the present embodiment, a power semiconductor device mounted on two first metal plates is electrically connected using a third metal plate in the sixth embodiment. FIG. 7 (a)
7B and 7B are successive process perspective views illustrating the method for manufacturing the semiconductor device 700 of the present embodiment. Note that the same components as those in the above embodiment are denoted by the same reference numerals.

The semiconductor device 700 of this embodiment is manufactured by using the same method as the semiconductor device 600 of the sixth embodiment. Here, the description of the same configuration and manufacturing method as those of the semiconductor device 600 of the sixth embodiment will be omitted, and the following description will focus on the differences.

As shown in FIG. 7A, two semiconductor devices of the first embodiment are simultaneously manufactured in the same manner as in the sixth embodiment. Here, the semiconductor elements 5 provided on the two first metal plates 1 correspond to the third metal plate 12 and the metal wires 1, respectively.
3 are connected. As a result, the plurality of semiconductor elements provided on one first metal plate and the other one
A plurality of semiconductor elements provided on one first metal plate;
They can be electrically connected and have equal potential. afterwards,
According to the manufacturing method of the sixth embodiment, the third metal plate 12
Is bent so that the surface of the metal part 3a on the side where the semiconductor element 5 is mounted faces the metal part 3b, and the semiconductor device 700 shown in FIG. 7B is manufactured. A simple jig or press machine can be used for the bending.

According to the present embodiment, the same effects as in the sixth embodiment can be obtained. Further, according to the present embodiment, 1
Since the plurality of semiconductor elements provided on one first metal plate and the plurality of semiconductor elements provided on the other first metal plate are electrically connected to each other through the third metal plate, The degree of freedom in circuit design can be greatly improved.

[0066]

According to the present invention, there is provided a semiconductor device in which the thermal resistance of the semiconductor element is low, the safe operation area is wide, and the electrical characteristics of the semiconductor element can be utilized to the maximum. Further, according to the present invention, there is provided a semiconductor device on which a large semiconductor element and / or a plurality of elements can be mounted. Further, according to the present invention, there is provided a semiconductor device with high productivity which does not require expensive sealing equipment and a sealing mold, and a method for manufacturing the same.

[Brief description of the drawings]

FIGS. 1A and 1B are diagrams illustrating a semiconductor device according to a first embodiment of the present invention, wherein FIG. 1A is a perspective view, and FIG.
It is sectional drawing which followed the A 'line.

FIGS. 2A and 2B are continuous process perspective views illustrating a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 3A is a process perspective view illustrating a method for manufacturing a semiconductor device according to a third embodiment of the present invention, and FIG.
It is a process perspective view explaining the modification of a 3rd embodiment.

FIGS. 4A and 4B are continuous process perspective views illustrating a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention. FIGS.

FIG. 4B is a cross-sectional view of the semiconductor device of FIG. 4A along the line AA ′.

5A and 5B are continuous process perspective views illustrating a method for manufacturing a semiconductor device according to a fifth embodiment of the present invention.

FIG. 5B is a cross-sectional view of the semiconductor device of FIG. 5A along the line AA ′.

FIGS. 6A and 6B are continuous process perspective views illustrating a method for manufacturing a semiconductor device according to a sixth embodiment of the present invention.

FIGS. 7A and 7B are continuous process perspective views illustrating a method for manufacturing a semiconductor device according to a seventh embodiment of the present invention.

8A and 8B are diagrams illustrating a conventional semiconductor device, wherein FIG.
Is a perspective view, and (b) is a cross-sectional view along the line AA ′ of (a).

FIG. 9 is a perspective view illustrating another conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st metal plate 1a Semiconductor element mounting part 1b Terminal lead 2 Resin layer (green sheet) 3 2nd metal plate 4 Copper heat spreader 5 Semiconductor element 6 Metal wire 7 Potting resin 8 Separation part 9 Hole row 10 Groove 11 Groove 12 Third metal plate 13 Metal wire 100 Semiconductor device

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[Procedure amendment]

[Submission Date] January 26, 2000 (2000.1.2
6)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Name of invention

[Correction method] Change

[Correction contents]

Patent application title: Semiconductor device and manufacturing method thereof

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

[0011]

According to the present invention, there is provided a semiconductor device comprising:
A first metal plate comprising an element mounting portion and a terminal lead;
2 metal plate, the first metal plate, and the second metal plate.
Disposed between the epoxy resin is higher than the epoxy resin
A resin layer formed by filling a filler having thermal conductivity,
A semiconductor element mounted on an upper surface of the element mounting portion;
A metal wire for electrically connecting the lead and the semiconductor element,
The semiconductor element, the metal wire, and a part of the terminal lead are internally
Semiconductor device with a potting resin embedded in the
Thus, the first metal plate includes an upper surface and an end of the element mounting portion.
The upper surface of the child lead is located on the same plane as the upper surface of the resin layer
Embedded in the resin layer as described above.
Thus, the above problem is solved.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0012

[Correction method] Change

[Correction contents]

According to the method of manufacturing a semiconductor device of the present invention, an element mounting
A first metal plate comprising a mounting portion and a terminal lead;
Metal plate, and disposed between the first metal plate and the second metal plate
Resin layer and a semiconductor mounted on the upper surface of the element mounting portion.
Body element, the terminal lead and the semiconductor element are electrically connected.
A continuous metal wire, the semiconductor element, the metal wire, and the terminal lead.
And a potting resin for burying part of the
Semiconductor device manufacturing method, which is higher than epoxy resin
Epoxy resin filled with filler with high thermal conductivity
Preparing a green sheet comprising the first metal
And a plate disposed on the second metal plate with the green sheet interposed therebetween.
And pressing the first metal plate to apply the first gold
An upper surface of the element mounting portion of the metal plate and an upper surface of the terminal lead;
Processed so that the upper surface of the green sheet is located on the same plane
And forming by heating and forming the resin layer.
The above problem is solved by including:

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Deleted

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Deleted

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0015

[Correction method] Deleted

Claims (5)

[Claims] A first metal plate including at least one pattern-formed element mounting portion and a plurality of terminal leads; a second metal plate having a plate-like or irregular shape; A resin layer having a predetermined thermal conductivity disposed between the first metal plate and the second metal plate, wherein the first metal plate includes an upper surface of the element mounting portion; The resin layer embedded in the resin layer such that the upper surface of at least one of the terminal leads and the upper surface of the resin layer are located on the same plane. At least one semiconductor element, a metal wire for electrically connecting the terminal lead and the semiconductor element, the semiconductor element, the metal wire, and a part of at least one of the terminal leads. Potting resin to be buried,
And a semiconductor device. 2. The second metal plate comprises: a first metal portion including at least the resin layer, the first metal plate, the semiconductor element, the metal wire, and the potting resin; The semiconductor according to claim 1, further comprising a second metal part extending from the metal part, wherein the semiconductor element is accommodated between the first metal part and the second metal part facing each other. apparatus. 3. The second metal part includes the resin layer, the first metal plate, the semiconductor element, the metal wire, and the potting resin on a surface facing the first metal part. The semiconductor device according to claim 2, comprising at least: 4. The first metal part and the second metal part are connected by a plurality of third metal plates, and the third metal plate is connected to an upper surface of the third metal plate. The semiconductor device according to claim 3, wherein the semiconductor device is embedded in the resin layer such that the upper surface of the resin layer is flush with the upper surface of the resin layer. 5. The third metal plate is electrically connected to the semiconductor element provided on the first metal part and the semiconductor element provided on the second metal part. The semiconductor element disposed on the first metal part and the semiconductor element disposed on the second metal part have the same potential. The semiconductor device according to claim 4.