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JP2000183099A - Bonding ribbon - Google Patents

Bonding ribbon

Info

Publication number
JP2000183099A
JP2000183099A JP35683398A JP35683398A JP2000183099A JP 2000183099 A JP2000183099 A JP 2000183099A JP 35683398 A JP35683398 A JP 35683398A JP 35683398 A JP35683398 A JP 35683398A JP 2000183099 A JP2000183099 A JP 2000183099A
Authority
JP
Japan
Prior art keywords
bonding
ribbon
line pattern
ground line
insulating resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35683398A
Other languages
Japanese (ja)
Inventor
Masakaze Hosoya
正風 細矢
Fuminori Ishizuka
文則 石塚
Mitsuaki Yanagibashi
光昭 柳橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP35683398A priority Critical patent/JP2000183099A/en
Publication of JP2000183099A publication Critical patent/JP2000183099A/en
Pending legal-status Critical Current

Links

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
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    • H01L2223/6605—High-frequency electrical connections
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    • H01L2223/66—High-frequency adaptations
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 ２０ＧＨｚ以上の通過周波数帯域を確保する
ことができ、かつ、従来のリボンボンディング装置の構
造を大幅に変更することなく装着し使用することが可能
なボンディング用リボンを提供すること。 【解決手段】 ボンディング用リボン１は、信号線パタ
ーン３の両側に第１のグランド線パターン４をギャップ
Ｇ１の間隔をおいて平行に配置し、その上に絶縁性樹脂
テープ２を密着させて構成してあり、スプール７に巻き
取ってリボンボンディング装置に供給できる形態として
ある。本例示のボンディング用リボン１の構造は、いわ
ゆるコプレーナ線路構造の高周波線路であり、絶縁性樹
脂テープ２の比誘電率を４．５、厚さを１２μｍ、信号
線パターン３と第１のグランド線パターン４の厚さを１
０μｍとして、信号線パターン３のパターン幅Ｗを１０
０μｍとした場合には、ギャップＧ１を１４μｍとする
と線路の特性インピーダンスは５０Ωとなる。 PROBLEM TO BE SOLVED: To provide a bonding ribbon which can secure a pass frequency band of 20 GHz or more and can be mounted and used without largely changing the structure of a conventional ribbon bonding apparatus. To provide. SOLUTION: A bonding ribbon 1 is configured such that first ground line patterns 4 are arranged in parallel on both sides of a signal line pattern 3 with a gap G1 therebetween, and an insulating resin tape 2 is adhered thereon. This is a form that can be wound around a spool 7 and supplied to a ribbon bonding apparatus. The structure of the bonding ribbon 1 according to the present embodiment is a high-frequency line having a so-called coplanar line structure. The insulating resin tape 2 has a relative dielectric constant of 4.5, a thickness of 12 μm, a signal line pattern 3 and a first ground line. Set the thickness of pattern 4 to 1
0 μm, and the pattern width W of the signal line pattern 3 is 10 μm.
When the gap is set to 0 μm, the characteristic impedance of the line becomes 50Ω when the gap G1 is set to 14 μm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体素子、配線
基板、パッケージ等の電極端子を相互に接続するための
ボンディング用リボンに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding ribbon for connecting electrode terminals of a semiconductor element, a wiring board, a package and the like to each other.

【０００２】[0002]

【従来の技術】図１５は、半導体実装装置の内部を示す
部分斜視図である。本従来例では、半導体素子２３の電
極パッド２４と配線基板２５の電源配線パターン３１と
の間をボンディングワイヤ３３で電気的に接続し、ま
た、電極パッド２４と信号配線パターン３０およびグラ
ンド配線パターン３２との間を接続リボン２１で電気的
に接続してある。ボンディングワイヤ３３は、一般に直
径２０〜３０μｍの金ワイヤあるいはアルミニウムワイ
ヤが多用される。接続リボン２１は、半導体素子２３の
高周波性能を損なわずに端子接続する目的で使用されて
いる。すなわち、ボンディングワイヤ３３を用いた場合
には、ワイヤ長さに起因する寄生インダクタンス成分に
よって、高周波信号の通過周波数帯域が制限され、ボン
ディングワイヤ３３が直径２５μｍで接続長１ｍｍの場
合には１０ＧＨｚ程度が限界である。そこで、より動作
周波数の高い半導体素子２３の場合に、信号端子および
グランド端子の接続部寄生インダクタンス成分を低減す
る目的で、接続リボン２１による端子間接続が適用され
る。接続リボン２１としては、一般に厚さ１０〜１５μ
ｍ、幅５０〜１００μｍ程度の金リボンが用いられる。2. Description of the Related Art FIG. 15 is a partial perspective view showing the inside of a semiconductor mounting device. In this conventional example, the electrode pads 24 of the semiconductor element 23 and the power supply wiring patterns 31 of the wiring board 25 are electrically connected by bonding wires 33, and the electrode pads 24 are connected to the signal wiring patterns 30 and the ground wiring patterns 32. Are electrically connected to each other by a connection ribbon 21. As the bonding wire 33, generally, a gold wire or an aluminum wire having a diameter of 20 to 30 μm is frequently used. The connection ribbon 21 is used for terminal connection without deteriorating the high-frequency performance of the semiconductor element 23. That is, when the bonding wire 33 is used, the pass frequency band of the high-frequency signal is limited by the parasitic inductance component caused by the wire length. When the bonding wire 33 has a diameter of 25 μm and a connection length of 1 mm, about 10 GHz is used. It is the limit. Therefore, in the case of the semiconductor element 23 having a higher operating frequency, inter-terminal connection using the connection ribbon 21 is applied for the purpose of reducing the parasitic inductance component at the connection portion between the signal terminal and the ground terminal. Generally, the thickness of the connection ribbon 21 is 10 to 15 μm.
m, and a gold ribbon having a width of about 50 to 100 μm is used.

【０００３】図１６は、接続リボン２１の供給形態を示
す斜視図である。接続リボン２１はスプール２２に巻き
取られた形態でリボンボンディング装置に装着されてボ
ンディングに供される。FIG. 16 is a perspective view showing a supply form of the connection ribbon 21. The connection ribbon 21 is wound on a spool 22 and mounted on a ribbon bonding apparatus to be used for bonding.

【０００４】図１７は、従来の接続リボン２１を適用し
たリボンボンディングの状態を示す断面図である。ボン
ディングの手順は、まず、半導体素子２３の電極端子２
４上に接続リボン２１の先端を位置合せしてボンディン
グツール２７によって接続リボン２１を加圧、加熱し、
時によっては超音波パワーを印加して第１ボンディング
する。次いで、接続リボン２１を延長して配線基板２５
の配線パターン２６上に位置合せして第１ボンディング
と同様にボンディングツール２７によって第２ボンディ
ングし、同時に接続リボン２１に矢印方向の張力を加え
て接続リボン２１を引きちぎってボンディングが完了す
る。FIG. 17 is a cross-sectional view showing a state of ribbon bonding to which a conventional connection ribbon 21 is applied. The bonding procedure is as follows.
4, the connection ribbon 21 is aligned with the leading end thereof, and the connection ribbon 21 is pressed and heated by the bonding tool 27;
In some cases, the first bonding is performed by applying ultrasonic power. Next, the connection ribbon 21 is extended to extend the wiring board 25.
The second bonding is performed by the bonding tool 27 in the same manner as the first bonding, and the connection ribbon 21 is simultaneously tensioned in the direction of the arrow to tear the connection ribbon 21 to complete the bonding.

【０００５】[0005]

【発明が解決しようとする課題】上述したように、従来
の半導体実装装置では、１０ＧＨｚ以上の動作周波数の
半導体素子２３の高周波端子およびグランド端子の接続
に従来の接続リボン２１を使用し、半導体実装装置の高
周波性能を確保するようにしている。しかしながら、接
続リボン２１を使用した場合でも、接続リボン２１が厚
さ１５μｍ×幅１００μｍで接続長１ｍｍの場合には通
過周波数帯域は２０ＧＨｚ程度が限界となっており、そ
れ以上の周波数帯域には適用できないという問題があ
る。As described above, in the conventional semiconductor mounting apparatus, the conventional connection ribbon 21 is used to connect the high-frequency terminal and the ground terminal of the semiconductor element 23 having an operating frequency of 10 GHz or more. The high frequency performance of the device is ensured. However, even when the connection ribbon 21 is used, when the connection ribbon 21 has a thickness of 15 μm × 100 μm and a connection length of 1 mm, the pass frequency band is limited to about 20 GHz, and is applied to a frequency band higher than that. There is a problem that can not be.

【０００６】本発明は、上記従来の接続リボンの問題点
を解消するものであって、その目的とするところは、２
０ＧＨｚ以上の通過周波数帯域を確保することができ、
かつ、ボンディング作業をするに当たって、従来のリボ
ンボンディング装置の構造を大幅に変更することなく装
着し使用することが可能なボンディング用リボンを提供
することにある。The present invention has been made to solve the above-mentioned problems of the conventional connection ribbon.
A pass frequency band of 0 GHz or more can be secured,
Another object of the present invention is to provide a bonding ribbon which can be mounted and used without largely changing the structure of a conventional ribbon bonding apparatus in performing a bonding operation.

【０００７】[0007]

【課題を解決するための手段】上記本発明の目的を達成
するための第１の発明のボンディング用リボンは、信号
線パターンと、該信号線パターンの両側に２つの第１の
グランド線パターンを所定間隔で平行に配置し、それら
の上に絶縁性樹脂テープを密着させて構成した。According to a first aspect of the present invention, there is provided a bonding ribbon including a signal line pattern and two first ground line patterns on both sides of the signal line pattern. They were arranged in parallel at predetermined intervals, and an insulating resin tape was adhered on them in such a manner as to be configured.

【０００８】第２の発明のボンディング用リボンは、信
号線パターンと、該信号線パターンの両側に２つの第１
のグランド線パターンを所定間隔で平行に配置し、それ
らの上に所定長さの絶縁性樹脂テープを、所定の間隔を
開けて順に配置し密着させて構成した。According to a second aspect of the present invention, there is provided a bonding ribbon comprising a signal line pattern and two first lines on both sides of the signal line pattern.
Are arranged in parallel at a predetermined interval, and an insulating resin tape of a predetermined length is sequentially arranged at a predetermined interval on the ground line patterns and closely adhered thereto.

【０００９】第３の発明のボンディング用リボンは、第
１または第２の発明において、絶縁性樹脂テープの信号
線パターンと第１のグランド線パターンの密着面（第１
主面）と対向する面（第２主面）に第２のグランド線パ
ターンを密着させ、かつ、第１のグランド線パターンと
第２のグランド線パターンとを電気的に接続して構成し
た。A bonding ribbon according to a third aspect of the present invention is the bonding ribbon according to the first or second aspect, wherein the signal line pattern of the insulating resin tape and the first ground line pattern are in close contact with each other.
The second ground line pattern is adhered to the surface (second main surface) opposite to the main surface), and the first ground line pattern and the second ground line pattern are electrically connected.

【００１０】第４の発明のボンディング用リボンは、第
３の発明において、絶縁性樹脂テープの第２主面に２本
の第２のグランド線パターンを所定の間隔で平行に密着
させて構成した。A bonding ribbon according to a fourth aspect of the present invention is the bonding ribbon according to the third aspect, wherein two second ground line patterns are closely adhered to the second main surface of the insulating resin tape in parallel at predetermined intervals. .

【００１１】第５の発明のボンディング用リボンは、第
３または第４の発明において、第１のグランド線パター
ンと第２のグランド線パターンとを、絶縁性樹脂テープ
上の貫通ビアを介して電気的に接続して構成した。A bonding ribbon according to a fifth aspect of the present invention is the bonding ribbon according to the third or fourth aspect, wherein the first ground line pattern and the second ground line pattern are electrically connected via a through via on the insulating resin tape. The connection was made.

【００１２】第６の発明のボンディング用リボンは、第
３または第４の発明において、第１のグランド線パター
ンと第２のグランド線パターンとを、絶縁性樹脂テープ
の側端で電気的に接続して構成した。A bonding ribbon according to a sixth aspect of the present invention is the bonding ribbon according to the third or fourth aspect, wherein the first ground line pattern and the second ground line pattern are electrically connected at a side end of the insulating resin tape. Was configured.

【００１３】[0013]

【発明の実施の形態】以下、本発明の実施の形態を例示
し、詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be exemplified and described in detail.

【００１４】[0014]

【実施の形態１】図１は本発明の実施の形態１で例示す
るボンディング用リボンの構造を示す斜視図であり、図
２は図１のＡ−Ａ’部の断面図である。例示するボンデ
ィング用リボン１は、信号線パターン３を中心に、該信
号線パターン３の両側に第１のグランド線パターン４を
ギャップＧ１の間隔をおいて平行に配置し、その上に絶
縁性樹脂テープ２を密着させて構成してあり、スプール
７に巻き取ってリボンボンディング装置に供給できる形
態としてある。本例示のボンディング用リボン１の構造
は、いわゆるコプレーナ線路構造の高周波線路であり、
信号線パターン３のパターン幅Ｗと、信号線パターン３
と第１のグランド線パターン４間のギャップＧ１を調整
することで、線路の特性インピーダンスを制御すること
ができる。Embodiment 1 FIG. 1 is a perspective view showing a structure of a bonding ribbon exemplified in Embodiment 1 of the present invention, and FIG. 2 is a cross-sectional view taken along a line AA 'in FIG. In the illustrated bonding ribbon 1, a first ground line pattern 4 is arranged in parallel on both sides of the signal line pattern 3 with a gap G1 therebetween with the signal line pattern 3 as a center. The tape 2 is configured to be in close contact with the tape, and is wound on a spool 7 and supplied to a ribbon bonding apparatus. The structure of the bonding ribbon 1 of the present example is a high-frequency line having a so-called coplanar line structure.
The pattern width W of the signal line pattern 3 and the signal line pattern 3
By adjusting the gap G1 between the first ground line pattern 4 and the first ground line pattern 4, the characteristic impedance of the line can be controlled.

【００１５】ちなみに、絶縁性樹脂テープ２の比誘電率
を４．５、厚さを１２μｍ、信号線パターン３と第１の
グランド線パターン４の厚さを１０μｍとして、信号線
パターン３のパターン幅Ｗを１００μｍとした場合に
は、ギャップＧ１を１４μｍとすると線路の特性インピ
ーダンスは５０Ωとなる。本発明のボンディング用リボ
ン１の製造方法としては、信号線用とグランド線用の導
体リボンを平行に配置し、その上に絶縁性樹脂テープ２
を接着剤で貼着させる方法、あるいは、予め導体箔を形
成した絶縁性樹脂テープ２を用いて、ギャップＧ１の部
分の導体箔をエッチングすることで信号線パターン３と
第１のグランド線パターン４を形成する方法等がある。
また、信号線パターン３および第１のグランド線パター
ン４の材質としては、金、銅、アルミニウム等のボンデ
ィングが可能な材料であればどのようなものでも良い。The relative width of the insulating resin tape 2 is 4.5, the thickness is 12 μm, the thickness of the signal line pattern 3 and the first ground line pattern 4 is 10 μm, and the pattern width of the signal line pattern 3 is When W is 100 μm, the characteristic impedance of the line is 50Ω when the gap G1 is 14 μm. As a method of manufacturing the bonding ribbon 1 of the present invention, conductor ribbons for signal lines and ground lines are arranged in parallel, and an insulating resin tape 2
The signal line pattern 3 and the first ground line pattern 4 by etching the conductor foil in the gap G1 using an insulating resin tape 2 on which a conductor foil is formed in advance. And the like.
The signal line pattern 3 and the first ground line pattern 4 may be made of any material that can be bonded, such as gold, copper, or aluminum.

【００１６】図３は、上記例示のボンディング用リボン
１を適用したボンディング時の状態を示す断面図であ
る。ボンディングの手順は、まず、半導体素子８の電極
端子９上にボンディング用リボン１の先端を位置合せし
てボンディングツール１２によってボンディング用リボ
ン１を加圧しながら超音波パワーを印加して第１ボンデ
ィングする。次いで、ボンディング用リボン１を延長し
て配線基板１０の配線パターン１１上に位置合せして第
１ボンディングと同様にボンディングツール１２によっ
て第２ボンディングし、同時にボンディング用リボン１
に矢印方向の張力を加えてボンディング用リボン１を引
きちぎってボンディングが完了する。FIG. 3 is a cross-sectional view showing a state at the time of bonding using the bonding ribbon 1 exemplified above. In the bonding procedure, first, the tip of the bonding ribbon 1 is positioned on the electrode terminal 9 of the semiconductor element 8 and the bonding tool 12 presses the bonding ribbon 1 while applying ultrasonic power to perform the first bonding. . Next, the bonding ribbon 1 is extended, positioned on the wiring pattern 11 of the wiring board 10 and subjected to the second bonding by the bonding tool 12 in the same manner as the first bonding.
Is applied in the direction of the arrow to tear off the bonding ribbon 1 to complete the bonding.

【００１７】絶縁性樹脂テープ２は軟質なために超音波
が吸収されて、信号線パターン３と第１のグランド線パ
ターン４へのボンディングツール１２からの超音波伝達
パワーが減衰するが、厚さ１５μｍ程度以下の薄い絶縁
性樹脂テープ２でボンディング用リボン１を構成すれ
ば、問題なくボンディングすることができる。なお、本
発明のボンディング用リボン１は、信号配線パターン１
５と２本の第１のグランド配線パターン１６を絶縁性樹
脂テープ２によって一体にしてあり、従来の接続リボン
２１より幅広であることから、使用するリボンボンディ
ング装置はそれに対応したものとする必要がある。これ
には、広く一般に使用されている熱超音波リボンボンデ
ィング装置に対して、ボンディングツール１２の先端形
状変更と、リボンのチャック機構の若干の改造のみで対
応することができ、大幅な装置改造をする必要はない。Since the insulating resin tape 2 is soft, it absorbs ultrasonic waves, and the ultrasonic transmission power from the bonding tool 12 to the signal line pattern 3 and the first ground line pattern 4 is attenuated. If the bonding ribbon 1 is made of a thin insulating resin tape 2 having a thickness of about 15 μm or less, bonding can be performed without any problem. In addition, the bonding ribbon 1 of the present invention includes the signal wiring pattern 1.
5 and the two first ground wiring patterns 16 are integrated by the insulating resin tape 2 and are wider than the conventional connection ribbon 21. Therefore, it is necessary to use a ribbon bonding apparatus corresponding to that. is there. This can be dealt with by a change in the tip shape of the bonding tool 12 and a slight modification of the ribbon chuck mechanism to a widely used thermo-ultrasonic ribbon bonding apparatus. do not have to.

【００１８】図４は、ボンディング用リボン１を適用し
た半導体実装装置の内部を示す部分斜視図である。本例
示の半導体実装装置では、半導体素子８の電極パッド９
と信号配線パターン１５および第１のグランド配線パタ
ーン１６との間をボンディング用リボン１で電気的に接
続している。電極パッド９と配線基板１０の電源配線パ
ターン１６との間はボンディングワイヤ１８で電気的に
接続しているが、半導体素子８の電源用の電極パッド９
および電源配線パターン１６がそれぞれグランド用の電
極パッド９およびグランド配線パターン１７に挟まれた
配置になっている場合には、電源用についてもボンディ
ング用リボン１で端子間接続しても良い。FIG. 4 is a partial perspective view showing the inside of a semiconductor mounting device to which the bonding ribbon 1 is applied. In the illustrated semiconductor mounting device, the electrode pad 9 of the semiconductor element 8 is
And the signal wiring pattern 15 and the first ground wiring pattern 16 are electrically connected by the bonding ribbon 1. The electrode pads 9 and the power supply wiring patterns 16 of the wiring board 10 are electrically connected by bonding wires 18.
When the power supply wiring pattern 16 is disposed between the ground electrode pad 9 and the ground wiring pattern 17, the terminals for the power supply may be connected by the bonding ribbon 1.

【００１９】ボンディング用リボン１は、図１および図
２によって説明したように特性インピーダンスを制御で
きる高周波線路構造であるため、従来の接続リボンのよ
うに接続長に起因するインダクタンス成分が寄生するこ
とがない。従って、高周波信号の通過周波数帯域制限が
大幅に緩和され、かつ、半導体素子８と配線基板１０と
の距離が離れていても半導体素子８の高周波性能を損な
わずに端子接続することができる。Since the bonding ribbon 1 has a high-frequency line structure capable of controlling the characteristic impedance as described with reference to FIGS. 1 and 2, the inductance component due to the connection length may be parasitic as in a conventional connection ribbon. Absent. Therefore, the limitation of the pass frequency band of the high-frequency signal is greatly eased, and even if the distance between the semiconductor element 8 and the wiring board 10 is large, the terminal connection can be performed without deteriorating the high-frequency performance of the semiconductor element 8.

【００２０】[0020]

【実施の形態２】図５は本発明の実施の形態２で例示す
るボンディング用リボンの構造を示す斜視図である。例
示するボンディング用リボン１は、実施の形態１と同様
に、信号線パターン３を中心に、該信号線パターン３の
両側に第１のグランド線パターン４をギャップＧ１の間
隔をおいて平行に配置しているが、その上に密着させる
絶縁性樹脂テープ２が所定長さに切断したものであっ
て、その所定長さの絶縁性樹脂テープ２を所定の間隔を
開けて順に配置し密着させて構成している。これによっ
て、一定間隔で絶縁性樹脂テープ２が無く信号線パター
ン３とグランド線パターン４が露出した部分を設けた構
造としている。Embodiment 2 FIG. 5 is a perspective view showing the structure of a bonding ribbon exemplified in Embodiment 2 of the present invention. In the bonding ribbon 1 exemplified, the first ground line pattern 4 is arranged in parallel with the signal line pattern 3 on both sides of the signal line pattern 3 with an interval of the gap G1 similarly to the first embodiment. However, the insulating resin tape 2 to be adhered thereon is cut to a predetermined length, and the insulating resin tapes 2 of the predetermined length are sequentially arranged at predetermined intervals and closely adhered. Make up. Thus, a structure in which the insulating resin tape 2 is not provided at regular intervals and the signal line pattern 3 and the ground line pattern 4 are exposed is provided.

【００２１】図６は、上記例示のボンディング用リボン
１を適用したボンディング時の状態を示す断面図であ
る。ボンディングの手順は実施の形態１と同様である
が、ボンディングツール１２によるボンディングは、上
記信号線パターン３とグランド線パターン４の露出部分
に対して行うため、絶縁性樹脂テープ２での超音波パワ
ーの吸収・減衰が防止できる。従って、実施の形態１で
例示したボンディング用リボン１を適用する場合より、
接続信頼性の高いボンディングが達成できる。なお、ボ
ンディングに使用するリボンボンディング装置は、実施
の形態１で説明と同様の装置であれば良い。FIG. 6 is a sectional view showing a state at the time of bonding using the bonding ribbon 1 exemplified above. The bonding procedure is the same as that of the first embodiment. However, since the bonding with the bonding tool 12 is performed on the exposed portions of the signal line pattern 3 and the ground line pattern 4, the ultrasonic power on the insulating resin tape 2 is used. Absorption and attenuation can be prevented. Therefore, compared to the case where the bonding ribbon 1 exemplified in the first embodiment is applied,
Bonding with high connection reliability can be achieved. Note that the ribbon bonding device used for bonding may be the same device as described in the first embodiment.

【００２２】[0022]

【実施の形態３】図７は本発明の実施の形態３で例示す
るボンディング用リボンの構造を示す斜視図であり、図
８は図７のＢ−Ｂ’部の断面図である。例示するボンデ
ィング用リボン１は、実施の形態１で例示したボンディ
ング用リボン１の絶縁性樹脂テープ２の上面、すなわち
信号線パターン３と第１のグランド線パターン４の密着
面（第１主面）と対向する面（第２主面）に第２のグラ
ンド線パターン５を密着させ、かつ、第１のグランド線
パターン４と第２のグランド線パターン５とを、絶縁性
樹脂テープ２上に一定間隔で貫通ビア６を設けて電気的
に接続した構造としている。本発明のボンディング用リ
ボン１における貫通ビア６の形成方法としては、第２の
グランド線パターン５と絶縁性樹脂テープ２の両者にエ
ッチング穴開けを行い、その後にスルーホ−ルめつき等
の手段で導通させる方法、あるいは、針状工具による穿
孔とカシメの手法によって接触導通させる方法等があ
る。Third Embodiment FIG. 7 is a perspective view showing a structure of a bonding ribbon exemplified in a third embodiment of the present invention, and FIG. 8 is a sectional view taken along the line BB 'of FIG. The illustrated bonding ribbon 1 is an upper surface of the insulating resin tape 2 of the bonding ribbon 1 illustrated in the first embodiment, that is, a contact surface (first main surface) between the signal line pattern 3 and the first ground line pattern 4. The second ground line pattern 5 is brought into close contact with the surface (the second main surface) opposite to the first and the first ground line pattern 4 and the second ground line pattern 5 are fixed on the insulating resin tape 2. The structure is such that through vias 6 are provided at intervals and are electrically connected. As a method for forming the through vias 6 in the bonding ribbon 1 of the present invention, etching holes are formed in both the second ground line pattern 5 and the insulating resin tape 2, and thereafter, a means such as through hole plating is used. There is a method of conducting, or a method of making contact and conduction by a method of punching with a needle-like tool and caulking.

【００２３】本発明のボンディング用リボン１の構造
は、いわゆるグランドコプレーナ線路構造の高周波線路
であり、信号線パターン３のパターン幅Ｗと、信号線パ
ターン３と第１のグランド線パターン４間のギャップＧ
１を調整することで、線路の特性インピーダンスを制御
することができる。ちなみに、絶縁性樹脂テープ２の比
誘電率を２．１、厚さを１５μｍ、信号線パターン３と
第１のグランド線パターン４の厚さを１０μｍとして、
信号線パターン３のパターン幅Ｗを５０μｍとした場合
には、ギャップＧ１を１００μｍにすると線路の特性イ
ンピーダンスは５０Ωとなる。本発明のボンディング用
リボン１の構造は、ギャップＧ１を広くしたい場合、あ
るいは低い特性インピーダンスが要求される場合に適す
る。The structure of the bonding ribbon 1 of the present invention is a high-frequency line having a so-called ground coplanar line structure, and includes a pattern width W of the signal line pattern 3 and a gap between the signal line pattern 3 and the first ground line pattern 4. G
By adjusting 1, the characteristic impedance of the line can be controlled. Incidentally, the relative permittivity of the insulating resin tape 2 is 2.1, the thickness is 15 μm, and the thickness of the signal line pattern 3 and the first ground line pattern 4 is 10 μm.
When the pattern width W of the signal line pattern 3 is 50 μm, the characteristic impedance of the line becomes 50Ω when the gap G1 is 100 μm. The structure of the bonding ribbon 1 of the present invention is suitable when the gap G1 is to be widened or when low characteristic impedance is required.

【００２４】図９は、上記例示のボンディング用リボン
１を適用したリボンボンディングの状態を示す断面図で
ある。本発明のボンディング用リボン１のボンディング
においては、信号線パターン３の上部に第２のグランド
線パターン５が存在するため、ボンディングツール１２
の加圧力を高くすると第２のグランド線パターン５と信
号線パターン３とが短絡する恐れが生じる。FIG. 9 is a cross-sectional view showing a state of ribbon bonding using the above-described bonding ribbon 1. In the bonding of the bonding ribbon 1 of the present invention, since the second ground line pattern 5 exists above the signal line pattern 3, the bonding tool 12
If the pressing force is increased, the second ground line pattern 5 and the signal line pattern 3 may be short-circuited.

【００２５】この問題を解消するため、図９に例示した
ように、半導体素子８の電極パッド９と配線基板１０の
配線パターン１１上に予め低融点の導電性バンプ１９を
配置し、低加圧・低加熱でボンディングできるようにし
ている。また、第２ボンディング後のボンディング用リ
ボン１の切り放しは、カッタにより切断するようにして
いる。従って、本発明のボンディング用リボン１を適用
するためのリボンボンディング装置としては、リボンカ
ット機構を具備した装置を使用する。To solve this problem, as illustrated in FIG. 9, conductive bumps 19 having a low melting point are previously arranged on the electrode pads 9 of the semiconductor element 8 and the wiring patterns 11 of the wiring board 10 to reduce the pressure. -It is possible to bond with low heating. The bonding ribbon 1 after the second bonding is cut off by a cutter. Therefore, as a ribbon bonding apparatus for applying the bonding ribbon 1 of the present invention, an apparatus having a ribbon cutting mechanism is used.

【００２６】なお、本実施の形態３では、絶縁性樹脂テ
ープ２が連続した実施の形態１で例示したボンディング
用リボン１に対して、第２のグランド線パターン５を付
加し密着させた構造を示したが、実施の形態２で例示し
た絶縁性樹脂テープ２を断続配置させたボンディング用
リボン１に対して、第２のグランド線パターン５を付加
し密着させた構造であっても、本発明の範疇に入ること
は言うまでもない。また、その場合のボンディング用リ
ボン１のボンディングでは、導電性低融点のバンプ１９
およびリボンボンディング装置のリボンカット機構は無
用となり、図６に示したと同様の状態でボンディングす
ることができる。In the third embodiment, a structure in which a second ground line pattern 5 is added and adhered to the bonding ribbon 1 illustrated in the first embodiment in which the insulating resin tape 2 is continuous. Although shown, the present invention is applicable to a structure in which the second ground line pattern 5 is added to and adhered to the bonding ribbon 1 in which the insulating resin tape 2 exemplified in the second embodiment is intermittently arranged. It goes without saying that it falls into the category. In the bonding of the bonding ribbon 1 in that case, the conductive low-melting bumps 19 are used.
Also, the ribbon cutting mechanism of the ribbon bonding apparatus becomes unnecessary, and bonding can be performed in the same state as shown in FIG.

【００２７】[0027]

【実施の形態４】図１０は本発明の実施の形態４で例示
するボンディング用リボンの構造を示す断面図である。
例示するボンディング用リボン１は、実施の形態３で例
示したボンディング用リボン１と同様のグランドコプレ
ーナ線路構造であり、実施の形態３で例示したボンディ
ング用リボン１との相違は、第１のグランド線パターン
４と第２のグランド線パターン５とを、電気的に接続す
る構造が異なる。すなわち、実施の形態３のボンディン
グ用リボン１は、絶縁性樹脂テープ２上に一定間隔で貫
通ビア６を設けて電気的に接続した構造であるが、本発
明のボンディング用リボン１では、絶縁性樹脂テープ２
の側端で第１のグランド線パターン４と第２のグランド
線パターン５とを電気的に接続している。Fourth Embodiment FIG. 10 is a sectional view showing the structure of a bonding ribbon exemplified in a fourth embodiment of the present invention.
The illustrated bonding ribbon 1 has the same ground coplanar line structure as the bonding ribbon 1 illustrated in the third embodiment, and the difference from the bonding ribbon 1 illustrated in the third embodiment is the first ground line. The structure for electrically connecting the pattern 4 and the second ground line pattern 5 is different. That is, the bonding ribbon 1 according to the third embodiment has a structure in which through vias 6 are provided at regular intervals on the insulating resin tape 2 and are electrically connected to each other. Resin tape 2
The first ground line pattern 4 and the second ground line pattern 5 are electrically connected at the side end of the first ground line pattern 4.

【００２８】本発明のボンディング用リボン１の製造方
法としては、外周囲を全面メタライズした絶縁性樹脂テ
ープ２を用いて、メタライズ形成された導体箔をエッチ
ングすることでギャップＧ１を形成する方法が最も簡便
であり、実施の形態３のボンディング用リボン１におけ
る貫通ビア６の形成が不要で製造工程を簡略化できる。
本発明のボンディング用リボン１のボンディングは、実
施の形態３において説明したと同様に行うことができ
る。すなわち、絶縁性樹脂テープ２が連続したリボン構
造の場合は、図９によって説明した状態でボンディング
し、絶縁性樹脂テープ２を実施の形態２のように断続配
置させたリボン構造の場合には、図６に示したと同様の
状態でボンディングする。The most common method of manufacturing the bonding ribbon 1 of the present invention is to form a gap G1 by etching a metallized conductive foil using an insulating resin tape 2 whose entire outer periphery is metallized. It is simple and does not require the formation of the through via 6 in the bonding ribbon 1 of the third embodiment, so that the manufacturing process can be simplified.
Bonding of the bonding ribbon 1 of the present invention can be performed in the same manner as described in the third embodiment. That is, in the case of a ribbon structure in which the insulating resin tape 2 is continuous, bonding is performed in the state described with reference to FIG. 9, and in the case of a ribbon structure in which the insulating resin tape 2 is intermittently arranged as in the second embodiment, Bonding is performed in the same state as shown in FIG.

【００２９】[0029]

【実施の形態５】図１１は本発明の実施の形態５で例示
するボンディング用リボンの構造を示す斜視図であり、
図１２は図１１のＣ−Ｃ’部の断面図である。例示する
ボンディング用リボン１は、実施の形態３で例示したボ
ンディング用リボン１の第２のグランド線パターン５を
信号線パターン３の直上で左右に分割し、２本の第２の
グランド線パターン５間にギャップＧ２を設けた構造と
しており、第１のグランド線パターン４と第２のグラン
ド線パターン５とは貫通ビア６によって接続している。
このように、ギャップＧ２を設けることによって、信号
線パターン３と第２のグランド線パターン５間の電磁結
合を弱めることができる。これによって、同一の線路特
性インピーダンスとする場合には、実施の形態１のコプ
レーナ線路構造と比較して、信号線パターン３の幅Ｗを
狭く、あるいはギャップＧ１を広くすることができ、ま
た、実施の形態３のグランドコプレーナ線路構造と比較
すると、信号線パターン３の幅Ｗを広く、あるいはギャ
ップＧ１を狭くすることができる。Fifth Embodiment FIG. 11 is a perspective view showing a structure of a bonding ribbon exemplified in a fifth embodiment of the present invention.
FIG. 12 is a cross-sectional view taken along the line CC ′ of FIG. In the illustrated bonding ribbon 1, the second ground line pattern 5 of the bonding ribbon 1 illustrated in the third embodiment is divided into right and left portions just above the signal line pattern 3, and two second ground line patterns 5 are provided. The first ground line pattern 4 and the second ground line pattern 5 are connected by a through via 6.
Thus, by providing the gap G2, the electromagnetic coupling between the signal line pattern 3 and the second ground line pattern 5 can be weakened. Accordingly, when the same line characteristic impedance is used, the width W of the signal line pattern 3 or the gap G1 can be increased as compared with the coplanar line structure of the first embodiment. As compared with the ground coplanar line structure of the third embodiment, the width W of the signal line pattern 3 can be widened or the gap G1 can be narrowed.

【００３０】すなわち、絶縁性樹脂テープ２の材料と厚
さが一定であれば、所定の特性インピーダンスに対して
は、実施の形態１および実施の形態３で例示したボンデ
ィング用リボン１では、信号線パターン３の幅Ｗを決定
するとギャップＧ１は一義的に決定されるが、本発明の
ボンディング用リボン１では、ギャップＧ２を調整する
ことによって、自在に所望の特性インピーダンスと所望
の信号線パターン３の幅ＷおよびギャップＧ１を得るこ
とができる。 ちなみに、絶縁性樹脂テープ２の比誘電
率が３．６、厚さが１５μｍ、信号線パターン３と第１
のグランド線パターン４の厚さが１０μｍ、第２のグラ
ンド線パターン５の厚さが５μｍの場合に、信号線パタ
ーン３のパターン幅Ｗを１００μｍ、ギャップＧ１を５
０μｍとして線路の特性インピーダンスを５０Ωにした
い時には、Ｇ２を１１５μｍにすれば良い。また、信号
線パターン３のパターン幅Ｗを７０μｍ、ギャップＧ１
を１００μｍとしたい時には、Ｇ２を８０μｍにすれば
線路の特性インピーダンス５０Ωが得られる。That is, if the material and the thickness of the insulating resin tape 2 are constant, the bonding ribbon 1 exemplified in the first and third embodiments has a signal line for a predetermined characteristic impedance. When the width W of the pattern 3 is determined, the gap G1 is uniquely determined. However, in the bonding ribbon 1 of the present invention, the desired characteristic impedance and the desired signal line pattern 3 can be freely adjusted by adjusting the gap G2. The width W and the gap G1 can be obtained. Incidentally, the relative permittivity of the insulating resin tape 2 is 3.6, the thickness is 15 μm, and the signal line pattern 3 and the first
When the thickness of the ground line pattern 4 is 10 μm and the thickness of the second ground line pattern 5 is 5 μm, the pattern width W of the signal line pattern 3 is 100 μm and the gap G1 is 5 μm.
When it is desired to set the characteristic impedance of the line to 50Ω with 0 μm, G2 may be set to 115 μm. The signal line pattern 3 has a pattern width W of 70 μm and a gap G1.
Is set to 100 μm, the characteristic impedance of the line can be obtained by setting G2 to 80 μm.

【００３１】図１３は、上記の第１の寸法条件（Ｗ：１
００μｍ、Ｇ１：５０μｍ、Ｇ２：１１５μｍ）のボン
ディング用リボン１についての、有限要素法による３次
元電磁界解析シミュレーション結果である。ＤＣ〜５０
ＧＨｚに亘って、特性インピーダンスは５０±０．２Ω
の範囲内にある。挿入損失は大きな損失増加はなく０．
２ｄＢ以内、また、反射損失は最大でも−１５ｄＢ以内
であり、本発明のボンディング用リボン１は高周波性能
に優れていることがわかる。本実施の形態５では、実施
の形態３と同様に、絶縁性樹脂テープ２が連続したリボ
ン構造の場合を示したが、絶縁性樹脂テープ２を実施の
形態２のように断続配置させたリボン構造であっても、
本発明の範疇に入ることは言うまでもない。FIG. 13 shows the first dimensional condition (W: 1).
3 shows a simulation result of a three-dimensional electromagnetic field analysis by a finite element method for a bonding ribbon 1 of 00 μm, G1: 50 μm, and G2: 115 μm). DC-50
Over GHz, characteristic impedance is 50 ± 0.2Ω
Within the range. The insertion loss does not increase greatly, and is 0.
The reflection loss is within 2 dB and the reflection loss is within -15 dB at the maximum, which indicates that the bonding ribbon 1 of the present invention is excellent in high-frequency performance. In the fifth embodiment, as in the third embodiment, a case is shown in which the insulating resin tape 2 has a continuous ribbon structure. However, the ribbon in which the insulating resin tape 2 is intermittently arranged as in the second embodiment is shown. Even with structure
It goes without saying that it falls within the scope of the present invention.

【００３２】なお、本発明のボンディング用リボン１
は、絶縁性樹脂テープ２が連続したリボン構造の場合で
あっても、信号線パターン３の直上に第２のグランド線
パターン５が配置されていないので、ボンディング時の
状態は実施の形態１の図３によって説明した状態でボン
ディングすることができる。また、絶縁性樹脂テープ２
を実施の形態２のように断続配置させたリボン構造の場
合には、図６に示したと同様の状態でボンディングする
ことができる。The bonding ribbon 1 of the present invention
Since the second ground line pattern 5 is not disposed immediately above the signal line pattern 3 even when the insulating resin tape 2 has a continuous ribbon structure, the state at the time of bonding is the same as that of the first embodiment. Bonding can be performed in the state described with reference to FIG. Also, the insulating resin tape 2
In the case of a ribbon structure in which is intermittently arranged as in the second embodiment, bonding can be performed in the same state as shown in FIG.

【００３３】[0033]

【実施の形態６】図１４は本発明の実施の形態６で例示
するボンディング用リボンの構造を示す断面図である。
例示するボンディング用リボン１は、実施の形態５で例
示したボンディング用リボン１と同様に、第２のグラン
ド線パターン５を信号線パターン３の直上で左右に分割
し、２本の第２のグランド線パターン５間にギャップＧ
２を設けた構造であり、実施の形態５で例示したボンデ
ィング用リボン１との相違は、第１のグランド線パター
ン４と第２のグランド線パターン５とを電気的に接続す
る構造が異なる。Sixth Embodiment FIG. 14 is a sectional view showing the structure of a bonding ribbon exemplified in a sixth embodiment of the present invention.
In the illustrated bonding ribbon 1, similarly to the bonding ribbon 1 illustrated in the fifth embodiment, the second ground line pattern 5 is divided right and left just above the signal line pattern 3, and two second ground lines are formed. Gap G between line patterns 5
2 is different from the bonding ribbon 1 illustrated in the fifth embodiment in that the first ground line pattern 4 and the second ground line pattern 5 are electrically connected.

【００３４】すなわち、実施の形態５のボンディング用
リボン１は、絶縁性樹脂テープ２上に一定間隔で貫通ビ
ア６を設けて電気的に接続した構造であるが、本発明の
ボンディング用リボン１では、絶縁性樹脂テープ２の側
端で第１のグランド線パターン４と第２のグランド線パ
ターン５とを電気的に接続している。本発明のボンディ
ング用リボン１の製造方法としては、外周囲を全面メタ
ライズした絶縁性樹脂テープ２を用いて、メタライズ形
成された導体箔をエッチングすることでギャップＧ１と
ギャップＧ２を形成する方法が最も簡便であり、実施の
形態５のボンディング用リボン１における貫通ビア６の
形成が不要で製造工程を簡略化できる。That is, the bonding ribbon 1 according to the fifth embodiment has a structure in which through vias 6 are provided at regular intervals on the insulating resin tape 2 and are electrically connected to each other. The first ground line pattern 4 and the second ground line pattern 5 are electrically connected at the side end of the insulating resin tape 2. The most common method of manufacturing the bonding ribbon 1 of the present invention is to form the gap G1 and the gap G2 by etching the metallized conductive foil using the insulating resin tape 2 whose entire outer periphery is metallized. It is simple and does not require the formation of the through via 6 in the bonding ribbon 1 of the fifth embodiment, so that the manufacturing process can be simplified.

【００３５】本発明のボンディング用リボン１のボンデ
ィングは、実施の形態５において説明したと同様に、絶
縁性樹脂テープ２が連続したリボン構造の場合は、実施
の形態１の図３によって説明した状態でボンディングす
ることができ、絶縁性樹脂テープ２を実施の形態２のよ
うに断続配置させたリボン構造の場合には、図６に示し
たと同様の状態でボンディングすることができる。The bonding of the bonding ribbon 1 according to the present invention is performed in the same manner as described in the fifth embodiment, in the case of a ribbon structure in which the insulating resin tape 2 is continuous, as described with reference to FIG. In the case of a ribbon structure in which the insulating resin tape 2 is intermittently arranged as in the second embodiment, bonding can be performed in the same state as shown in FIG.

【００３６】[0036]

【発明の効果】本発明のボンディング用リボンは、信号
線パターンとグランド線パターンを絶縁性樹脂テープに
密着させて特性インピーダンスを制御できる高周波線路
構造とした。これにより、従来の接続リボンのように接
続長に起因するインダクタンス成分が寄生することがな
くなり、高周波信号の通過周波数帯域制限が大幅に緩和
され、かつ、半導体素子と配線基板との距離が離れてい
ても半導体素子の高周波性能を損なわずに端子接続する
ことができる利点がある。従って、従来設計の半導体実
装装置においても、端子間接続を本発明のボンディング
用リボンに変更するだけで半導体実装装置の高周波性能
を向上できる効果がある。本発明のボンディング用リボ
ンをボンディングするための装置は、広く一般に使用さ
れている熱超音波リボンボンディング装置に対して、ボ
ンディングツールの先端形状変更とリボンのチャック機
構の若干の改造のみで対応できるため、大きな設備投資
をすることなく端子間接続部の高周波化が図れ、工業的
価値が極めて高い。The bonding ribbon of the present invention has a high-frequency line structure in which the characteristic impedance can be controlled by adhering the signal line pattern and the ground line pattern to the insulating resin tape. As a result, the inductance component due to the connection length does not become parasitic as in the conventional connection ribbon, the restriction on the pass frequency band of the high-frequency signal is greatly eased, and the distance between the semiconductor element and the wiring board is increased. However, there is an advantage that the terminals can be connected without deteriorating the high frequency performance of the semiconductor element. Therefore, even in the conventional semiconductor mounting device, there is an effect that the high frequency performance of the semiconductor mounting device can be improved only by changing the connection between the terminals to the bonding ribbon of the present invention. Since the apparatus for bonding the bonding ribbon of the present invention can respond to the widely used thermo-ultrasonic ribbon bonding apparatus only by changing the tip shape of the bonding tool and slightly modifying the ribbon chuck mechanism. It is possible to increase the frequency of the inter-terminal connection portion without making a large capital investment, and the industrial value is extremely high.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施の形態１で例示するボンディング
用リボンの構造を示す斜視図である。FIG. 1 is a perspective view showing a structure of a bonding ribbon exemplified in Embodiment 1 of the present invention.

【図２】本発明の実施の形態１で例示した図１の中のＡ
−Ａ’部断面図である。FIG. 2 shows A in FIG. 1 exemplified in the first embodiment of the present invention;
It is -A 'part sectional drawing.

【図３】本発明の実施の形態１で例示したボンディング
用リボンを適用したボンディング時の状態を示す断面図
である。FIG. 3 is a cross-sectional view showing a state at the time of bonding using the bonding ribbon illustrated in Embodiment 1 of the present invention;

【図４】本発明の実施の形態１で例示したボンディング
用リボンを適用した半導体実装装置の内部を示す部分斜
視図である。FIG. 4 is a partial perspective view showing the inside of a semiconductor mounting device to which the bonding ribbon exemplified in the first embodiment of the present invention is applied;

【図５】本発明の実施の形態２で例示するボンディング
用リボンの構造を示す斜視図である。FIG. 5 is a perspective view showing a structure of a bonding ribbon exemplified in Embodiment 2 of the present invention.

【図６】本発明の実施の形態２で例示したボンディング
用リボンを適用したボンディング時の状態を示す断面図
である。FIG. 6 is a cross-sectional view showing a state at the time of bonding using the bonding ribbon exemplified in Embodiment 2 of the present invention.

【図７】本発明の実施の形態３で例示するボンディング
用リボンの構造を示す斜視図である。FIG. 7 is a perspective view showing a structure of a bonding ribbon exemplified in Embodiment 3 of the present invention.

【図８】本発明の実施の形態３で例示した図７の中のＢ
−Ｂ’部断面図である。FIG. 8 is a diagram illustrating a portion B in FIG. 7 exemplified in the third embodiment of the present invention;
FIG. 4 is a sectional view taken along the line B-B ′.

【図９】本発明の実施の形態３で例示したボンディング
用リボンを適用したボンディング時の状態を示す断面図
である。FIG. 9 is a cross-sectional view showing a state at the time of bonding using the bonding ribbon exemplified in Embodiment 3 of the present invention.

【図１０】本発明の実施の形態４で例示するボンディン
グ用リボンの構造を示す断面図である。FIG. 10 is a cross-sectional view illustrating a structure of a bonding ribbon exemplified in Embodiment 4 of the present invention.

【図１１】本発明の実施の形態５で例示するボンディン
グ用リボンの構造を示す斜視図である。FIG. 11 is a perspective view showing a structure of a bonding ribbon exemplified in a fifth embodiment of the present invention.

【図１２】本発明の実施の形態５で例示した図１１の中
のＣ−Ｃ’部断面図である。FIG. 12 is a sectional view taken along the line CC ′ in FIG. 11 exemplified in the fifth embodiment of the present invention.

【図１３】本発明の実施の形態５で例示したボンディン
グ用リボンに対する、有限要素法による３次元電磁界解
析シミュレーションの結果である。FIG. 13 shows a result of a three-dimensional electromagnetic field analysis simulation by the finite element method for the bonding ribbon illustrated in the fifth embodiment of the present invention.

【図１４】本発明の実施の形態６で例示するボンディン
グ用リボンの構造を示す断面図である。FIG. 14 is a cross-sectional view illustrating a structure of a bonding ribbon exemplified in Embodiment 6 of the present invention.

【図１５】従来技術を説明する従来例の半導体実装装置
の内部を示す部分斜視図である。FIG. 15 is a partial perspective view showing the inside of a conventional semiconductor mounting device for explaining a conventional technology.

【図１６】従来技術を説明する従来例の接続リボンの供
給形態を示す斜視図である。FIG. 16 is a perspective view showing a conventional connection ribbon supply mode for explaining a conventional technique.

【図１７】従来技術を説明する従来例の接続リボンを適
用したリボンボンディングの状態を示す断面図である」FIG. 17 is a cross-sectional view showing a state of ribbon bonding using a conventional connection ribbon for explaining a conventional technique.

【符号の説明】[Explanation of symbols]

１ ボンディング用リボン ２ 絶縁性フィルム（絶縁性樹脂テープ） ３ 信号線パターン ４ 第１のグランド線パターン ５ 第２のグランド線パターン ６ 貫通ビア ７ スプール ８ 半導体素子 ９ 電極パッド １０ 配線基板 １１ 配線パターン １２ ボンディングツール １３ 第１ボンド点 １４ 第２ボンド点 １５ 信号配線パターン １６ 電源配線パターン １７ グランド配線パターン １８ ボンディングワイヤ １９ 導電性バンプ ２１ 接続リボン ２２ スプール ２３ 半導体素子 ２４ 電極パッド ２５ 配線基板 ２６ 配線パターン ２７ ボンディングツール ２８ 第１ボンド点 ２９ 第２ボンド点 ３０ 信号配線パターン ３１ 電源配線パターン ３２ グランド配線パターン ３３ ボンディングワイヤ Reference Signs List 1 bonding ribbon 2 insulating film (insulating resin tape) 3 signal line pattern 4 first ground line pattern 5 second ground line pattern 6 through via 7 spool 8 semiconductor element 9 electrode pad 10 wiring board 11 wiring pattern 12 Bonding tool 13 First bond point 14 Second bond point 15 Signal wiring pattern 16 Power supply wiring pattern 17 Ground wiring pattern 18 Bonding wire 19 Conductive bump 21 Connection ribbon 22 Spool 23 Semiconductor element 24 Electrode pad 25 Wiring board 26 Wiring pattern 27 Bonding Tool 28 First bond point 29 Second bond point 30 Signal wiring pattern 31 Power supply wiring pattern 32 Ground wiring pattern 33 Bonding wire

───────────────────────────────────────────────────── フロントページの続き (72)発明者 柳橋 光昭 東京都新宿区西新宿三丁目19番２号 日本 電信電話株式会社内 Ｆターム(参考） 5F044 AA02 FF00  ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Mitsuaki Yanagibashi 3-19-2 Nishishinjuku, Shinjuku-ku, Tokyo F-term in Japan Telegraph and Telephone Corporation (reference) 5F044 AA02 FF00

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 半導体素子、配線基板、パッケージ等の
電極端子を相互に接続するためのボンディング用リボン
であって、 信号線パターン（３）と、 該信号線パターン（３）の両側に２つの第１のグランド
線パターン（４）を所定間隔で平行に配置し、 それらの上に絶縁性樹脂テープ（２）を密着させてなる
ことを特徴とするボンディング用リボン。A bonding ribbon for mutually connecting electrode terminals of a semiconductor element, a wiring board, a package, etc., comprising: a signal line pattern (3); and two signal ribbons on both sides of the signal line pattern (3). A bonding ribbon, comprising a first ground line pattern (4) arranged in parallel at a predetermined interval, and an insulating resin tape (2) adhered thereon. 【請求項２】 半導体素子、配線基板、パッケージ等の
電極端子を相互に接続するためのボンディング用リボン
であって、 信号線パターン（３）と、 該信号線パターン（３）の両側に２つの第１のグランド
線パターン（４）を所定間隔で平行に配置し、 それらの上に所定長さの絶縁性樹脂テープ（２）を、所
定の間隔を開けて順に配置し密着させてなることを特徴
とするボンディング用リボン。2. A bonding ribbon for mutually connecting electrode terminals of a semiconductor element, a wiring board, a package, etc., comprising a signal line pattern (3), and two signal lines on both sides of the signal line pattern (3). First ground line patterns (4) are arranged in parallel at a predetermined interval, and insulating resin tapes (2) of a predetermined length are sequentially arranged at a predetermined interval on them and closely adhered thereto. Characteristic ribbon for bonding. 【請求項３】 請求項１または請求項２記載のボンディ
ング用リボンにおいて、 絶縁性樹脂テープ（２）の信号線パターン（３）と第１
のグランド線パターン（４）の密着面（第１主面）と対
向する面（第２主面）に第２のグランド線パターン
（５）を密着させ、 かつ、第１のグランド線パターン（４）と第２のグラン
ド線パターン（５）とを電気的に接続してなることを特
徴とするボンディング用リボン。3. The bonding ribbon according to claim 1, wherein the signal line pattern (3) of the insulating resin tape (2) and the first wire are connected to each other.
The second ground line pattern (5) is brought into close contact with the surface (second main surface) opposite to the contact surface (first main surface) of the ground line pattern (4). ) And the second ground line pattern (5) are electrically connected to each other. 【請求項４】 絶縁性樹脂テープ（２）の第２主面に２
本の第２のグランド線パターン（５）を所定の間隔で平
行に密着させてなることを特徴とする請求項３記載のボ
ンディング用リボン。4. A second main surface of the insulating resin tape (2)
The bonding ribbon according to claim 3, wherein the second ground line patterns (5) are closely adhered in parallel at predetermined intervals. 【請求項５】 第１のグランド線パターン（４）と第２
のグランド線パターン（５）とを、絶縁性樹脂テープ
（２）上の貫通ビア（６）を介して電気的に接続してな
ることを特徴とする請求項３または請求項４記載のボン
ディング用リボン。5. The first ground line pattern and a second ground line pattern.
The bonding line according to claim 3 or 4, wherein the ground line pattern (5) is electrically connected to the ground line pattern (5) via a through via (6) on the insulating resin tape (2). ribbon. 【請求項６】 第１のグランド線パターン（４）と第２
のグランド線パターン（５）とを、絶縁性樹脂テープ
（２）の側端で電気的に接続してなることを特徴とする
請求項３または請求項４記載のボンディング用リボン。6. A first ground line pattern (4) and a second ground line pattern (4).
The bonding ribbon according to claim 3 or 4, wherein the ground line pattern (5) is electrically connected to a side end of the insulating resin tape (2).
JP35683398A 1998-12-16 1998-12-16 Bonding ribbon Pending JP2000183099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35683398A JP2000183099A (en) 1998-12-16 1998-12-16 Bonding ribbon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35683398A JP2000183099A (en) 1998-12-16 1998-12-16 Bonding ribbon

Publications (1)

Publication Number Publication Date
JP2000183099A true JP2000183099A (en) 2000-06-30

Family

ID=18451004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35683398A Pending JP2000183099A (en) 1998-12-16 1998-12-16 Bonding ribbon

Country Status (1)

Country Link
JP (1) JP2000183099A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004336043A (en) * 2003-05-02 2004-11-25 Orthodyne Electronics Corp Ribbon bonding
JP2006344652A (en) * 2005-06-07 2006-12-21 Toshiba Components Co Ltd Semiconductor device and method of mounting semiconductor component
US7230322B2 (en) 2001-04-18 2007-06-12 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2007194270A (en) * 2006-01-17 2007-08-02 Ultrasonic Engineering Co Ltd Bonding ribbon and bonding method using the same
US7560809B2 (en) 2006-02-14 2009-07-14 Mitsubishi Electric Corporation Semiconductor device
CN102238797A (en) * 2010-04-20 2011-11-09 鸿富锦精密工业（深圳）有限公司 Flexible printed circuit
WO2017199837A1 (en) * 2016-05-20 2017-11-23 株式会社オートネットワーク技術研究所 Circuit structure
JP7552014B2 (en) 2019-03-15 2024-09-18 富士電機株式会社 Semiconductor module and manufacturing method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7230322B2 (en) 2001-04-18 2007-06-12 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US7364950B2 (en) 2001-04-18 2008-04-29 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2004336043A (en) * 2003-05-02 2004-11-25 Orthodyne Electronics Corp Ribbon bonding
JP2011155298A (en) * 2003-05-02 2011-08-11 Orthodyne Electronics Corp Ribbon bonding
US8685789B2 (en) 2003-05-02 2014-04-01 Orthodyne Electronics Corporation Ribbon bonding in an electronic package
JP2006344652A (en) * 2005-06-07 2006-12-21 Toshiba Components Co Ltd Semiconductor device and method of mounting semiconductor component
JP2007194270A (en) * 2006-01-17 2007-08-02 Ultrasonic Engineering Co Ltd Bonding ribbon and bonding method using the same
US7560809B2 (en) 2006-02-14 2009-07-14 Mitsubishi Electric Corporation Semiconductor device
CN102238797A (en) * 2010-04-20 2011-11-09 鸿富锦精密工业（深圳）有限公司 Flexible printed circuit
WO2017199837A1 (en) * 2016-05-20 2017-11-23 株式会社オートネットワーク技術研究所 Circuit structure
JP7552014B2 (en) 2019-03-15 2024-09-18 富士電機株式会社 Semiconductor module and manufacturing method

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