JP2000105081A - Gas heating atmosphere continuous furnace - Google Patents
Gas heating atmosphere continuous furnaceInfo
- Publication number
- JP2000105081A JP2000105081A JP10309352A JP30935298A JP2000105081A JP 2000105081 A JP2000105081 A JP 2000105081A JP 10309352 A JP10309352 A JP 10309352A JP 30935298 A JP30935298 A JP 30935298A JP 2000105081 A JP2000105081 A JP 2000105081A
- Authority
- JP
- Japan
- Prior art keywords
- heating chamber
- chamber
- heating
- furnace
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Tunnel Furnaces (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、金属や金属化合物等の
被加熱製品を加熱処理するために用いられるガス加熱雰
囲気連続炉に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a continuous furnace in a gas heating atmosphere used for heat-treating a product to be heated such as a metal or a metal compound.
【0002】[0002]
【従来の技術】この種の連続炉においては、多くの場
合、最終の加熱目的温度に到達するまでの途中の温度と
時間との関連を被加熱処理物の処理目的に合せて設定し
調節することが求められる。2. Description of the Related Art In a continuous furnace of this kind, in many cases, the relationship between the temperature and the time during which the temperature reaches the final heating target temperature is set and adjusted in accordance with the processing purpose of the object to be heated. Is required.
【0003】このために、加熱室を長手方向で数区域に
分割し、各区域の温度を格別設定して制御する。従っ
て、輻射管式バーナーを炉の長手方向を横切る方向で取
付け、一個もしくは数個のバーナーで各区域の温度を保
証することになる。For this purpose, the heating chamber is divided into several sections in the longitudinal direction, and the temperature of each section is set and controlled. Therefore, the radiant tube burner is installed in a direction transverse to the longitudinal direction of the furnace, and one or several burners guarantee the temperature of each section.
【0004】[0004]
【発明が解決しようとする課題】ところが、このような
加熱方法では、急速な加熱もしくは急速な加熱によって
生じる反応の衝撃を緩和することが難しい。However, with such a heating method, it is difficult to reduce the impact of the rapid heating or the reaction caused by the rapid heating.
【0005】そこで、加熱効果を損なうことなしに、低
温部から高温部に向って緩やかにしかも途切れることな
く被加熱製品を昇温できるようにしたガス加熱雰囲気連
続炉が望まれる。[0005] Therefore, there is a demand for a continuous furnace in a gas-heated atmosphere in which the temperature of a product to be heated can be increased gradually and without interruption from a low-temperature portion to a high-temperature portion without impairing the heating effect.
【0006】[0006]
【課題を解決するための手段】本発明にあっては、連続
炉の炉室の長手方向に沿って炉室を加熱するための輻射
管を取付け、この輻射管の一端は炉の低温部から炉外に
出して排気口とし、高温部を経て伸びる他端を、熱的に
も雰囲気的にも加熱炉室とは別個に設けられた燃焼室に
つないで、熱ガスの吸入・導入口とするものである。According to the present invention, a radiant tube for heating the furnace chamber is installed along the longitudinal direction of the furnace chamber of the continuous furnace, and one end of the radiant tube is connected to a low temperature part of the furnace. It is taken out of the furnace and used as an exhaust port, and the other end extending through the high-temperature section is connected to a combustion chamber provided separately from the heating furnace chamber both thermally and atmospherically, and is used as a hot gas intake / inlet port. Is what you do.
【0007】吸入口から輻射放熱管に入った熱ガスは、
加熱室内の高温部から低温部に向って高速で移動し、移
動に伴って次第に放熱して加熱室全体を所望の温度勾配
下に保つ。即ち、被加熱製品は低温部から高温部に向っ
て進行するのにつれて緩やかに加熱されるが、このよう
な被加熱製品の進行とは逆になるように輻射放熱管中の
熱ガスの流れを作るのである。このようにすることによ
り、被加熱処理製品が緩やかに加熱され、一方熱ガスは
次第に温度を下げて、その加熱効率を最大限に発揮でき
ることになる。[0007] The hot gas entering the radiation radiating tube from the suction port is
The heating chamber moves at a high speed from the high temperature section to the low temperature section, and gradually dissipates heat with the movement to keep the entire heating chamber under a desired temperature gradient. In other words, the product to be heated is gradually heated as it progresses from the low-temperature portion to the high-temperature portion.However, the flow of the hot gas in the radiation radiating pipe is reversed in such a way that the progress of the product to be heated is reversed. Make it. In this way, the product to be heated is slowly heated, while the temperature of the hot gas is gradually lowered, so that the heating efficiency can be maximized.
【0008】[0008]
【発明の実施の形態】以下、図面を参照して、本発明に
なるガス加熱雰囲気連続炉の好適な実施例を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of a continuous furnace in a gas heating atmosphere according to the present invention will be described below with reference to the drawings.
【0009】一部を断面した説明的な本発明の連続炉の
平面図である図1、および側断面図の図2において、連
続炉の加熱室1の上部にガス燃焼室2を設け、下部にあ
る加熱室1の天井と底部に蛇行型の輻射放熱管3を、そ
れが全体として加熱室1の長手方向に伸展するように設
けた。符号4は加熱室1の入口、符号5は出口を示す。In FIG. 1 which is a plan view of a continuous furnace of the present invention in which a part is sectioned, and FIG. 2 which is a side sectional view, a gas combustion chamber 2 is provided above a heating chamber 1 of the continuous furnace. And a meandering radiation radiating tube 3 is provided on the ceiling and bottom of the heating chamber 1 so as to extend in the longitudinal direction of the heating chamber 1 as a whole. Reference numeral 4 denotes an inlet of the heating chamber 1, and reference numeral 5 denotes an outlet.
【0010】上下の輻射放熱管3のそれぞれの加熱室1
の入口に近い端部は、負圧が働く排気管6につながれ、
加熱室1の出口5に近い他端はそれぞれガス燃焼室2に
つながれている。Each heating chamber 1 of the upper and lower radiation radiating tubes 3
The end near the inlet is connected to the exhaust pipe 6 where negative pressure works.
The other ends of the heating chamber 1 near the outlet 5 are connected to the gas combustion chamber 2 respectively.
【0011】符号7はバーナーで、この実施例ではメタ
ンガスを燃焼して熱ガスとした。ガス燃焼室2の幅を7
50mm、高さを200mm、長さを2000mmと
し、加熱室1の幅を750mm、高さを400mm、長
さを4230mmとした。Reference numeral 7 denotes a burner. In this embodiment, methane gas is burned to generate hot gas. Set the width of the gas combustion chamber 2 to 7
The heating chamber 1 was 50 mm, the height was 200 mm, the length was 2000 mm, the width of the heating chamber 1 was 750 mm, the height was 400 mm, and the length was 4230 mm.
【0012】この加熱室1に幅が600mmの耐熱鋼製
コンベヤーベルト8を取付けた。このベルト8を、長さ
が4230mmの加熱室1中を22分間で通過するよう
に運転制御した。A heat-resistant steel conveyor belt 8 having a width of 600 mm was attached to the heating chamber 1. The operation of the belt 8 was controlled so as to pass through the heating chamber 1 having a length of 4230 mm in 22 minutes.
【0013】ステンレス支持具で支えられた12個の銅
性部品からなり、燐銅系ろう材を付けた熱交換器の半完
成品のろう付けをこの連続炉で行なったところ、良好な
ろう付けが行なわれた。[0013] The brazing of a semi-finished product of a heat exchanger comprising 12 copper parts supported by a stainless steel support and fitted with a phosphorous copper brazing material was performed in this continuous furnace. Was done.
【0014】加熱室1中の最高温度は865℃に保た
れ、このときの加熱室の入口4付近の雰囲気ガス(窒素
40%、水素40%、一酸化炭素20%)の温度は23
0℃であり、排出管6からの排ガスの温度は348℃で
あった。The maximum temperature in the heating chamber 1 is maintained at 865 ° C. At this time, the temperature of the atmosphere gas (nitrogen 40%, hydrogen 40%, carbon monoxide 20%) near the inlet 4 of the heating chamber is 23.
The temperature of the exhaust gas from the discharge pipe 6 was 348 ° C.
【0015】このような温度分布下の加熱室1中で、上
記の半完成品は緩やかに昇温し、加熱室内での22分間
の滞留中で4分20秒間は目的温度の865℃近傍に保
たれて、技術的に充分に満足できるものであることが確
かめられた。In the heating chamber 1 under such a temperature distribution, the above-mentioned semi-finished product gradually rises in temperature, and stays in the heating chamber for 22 minutes to reach a target temperature of about 865 ° C. for 4 minutes and 20 seconds. It was confirmed that it was kept and technically satisfactory.
【0016】なお、この種の被加熱処理物を急速に86
5℃近傍の炉中に入れると、鋼部品とステンレス支持具
との間の熱伝導や熱膨張係数の差が原因となって歪が大
きく生じ、寸法変化やろう接不良を招くが、上記の実施
例ではそのような事態は全く生じなかった。It is to be noted that this kind of the object to be heated is rapidly reduced to 86.
When placed in a furnace near 5 ° C., a large strain occurs due to the difference in thermal conductivity and coefficient of thermal expansion between the steel part and the stainless steel support, causing dimensional change and poor soldering. In the example, such a situation did not occur at all.
【0017】上記の実施例では、ガス燃焼室2を加熱室
1の上部に独立して設けて、炉の一部としたが、ガス燃
焼室を連続炉から離して設けてもよいことは勿論のこと
である。また、ガス燃焼室を別個に設ける代わりに、輻
射放熱管3の高温側の一部を燃焼室とし、ここで熱ガス
を発生させるようにしてもよい。In the above embodiment, the gas combustion chamber 2 is provided independently of the heating chamber 1 and is a part of the furnace. However, the gas combustion chamber may be provided separately from the continuous furnace. That is. Instead of providing the gas combustion chamber separately, a part on the high-temperature side of the radiation radiator tube 3 may be used as the combustion chamber, and the hot gas may be generated here.
【0018】更にまた、負圧に保たれる輻射加熱管に導
入される燃焼ガスの燃比を燃料過剰、即ち酸素不足の状
態で供給し、輻射加熱管の途中で酸素または空気を管中
に吸入させ、この途中部分の下流で二次燃焼の発熱を促
して該下流部分の温度を上げるようにすることもでき
る。Further, the fuel ratio of the combustion gas introduced into the radiant heating tube maintained at a negative pressure is supplied in a state of excess fuel, that is, in a state of insufficient oxygen, and oxygen or air is sucked into the tube in the middle of the radiant heating tube. Then, the heat of the secondary combustion may be promoted downstream of the intermediate portion to raise the temperature of the downstream portion.
【0019】[0019]
【発明の効果】以上詳述した通り、本発明によるガス加
熱雰囲気連続炉によれば、被加熱処理物の昇温を緩やか
にすることができ、しかも昇温に用いられる熱ガスの熱
効率が誠に大きい優れた効果がある。As described above in detail, according to the continuous furnace of the gas heating atmosphere according to the present invention, the temperature of the object to be heated can be moderately increased, and the thermal efficiency of the hot gas used for the temperature increase can be improved. There is a great excellent effect.
【図1】本発明に係るガス加熱雰囲気連続炉の一部を断
面で示す平面図である。FIG. 1 is a plan view showing a cross section of a part of a continuous furnace in a gas heating atmosphere according to the present invention.
【図2】この連続炉の側断面図である。FIG. 2 is a side sectional view of the continuous furnace.
1−加熱室 2−ガス燃焼室 3−輻射放熱管 4−加熱室の入口 5−加熱室の出口 6−排出管 7−バーナー 8−コンベヤーベルト 1-heating chamber 2-gas combustion chamber 3-radiation radiator pipe 4-heating chamber inlet 5-heating chamber outlet 6-discharge pipe 7-burner 8-conveyor belt
Claims (4)
加熱処理するための長尺なトンネル状の加熱室を備え、
この加熱室はその入口から出口に向って該被加熱製品を
搬送するためのベルトとこのベルトの搬送経路外にあっ
て加熱室の長手方向に伸びて加熱室を加熱する輻射放熱
管とを有し、この輻射放熱管の加熱室の出口に近い方の
一端を熱ガスの導入側とし、加熱室の入口に近い方の他
端を熱ガスの排出側とするガス加熱雰囲気連続炉。1. A long tunnel-shaped heating chamber for continuously heating a product to be heated under a desired atmosphere,
The heating chamber has a belt for transporting the product to be heated from the inlet to the outlet, and a radiation radiating tube which is outside the transport path of the belt and extends in the longitudinal direction of the heating chamber to heat the heating chamber. A gas heating atmosphere continuous furnace in which one end of the radiation radiating tube near the outlet of the heating chamber is used as a hot gas introduction side, and the other end near the entrance of the heating chamber is used as a hot gas discharge side.
燃焼室が加熱室から独立して設けられている請求項1記
載のガス加熱雰囲気連続炉。2. The gas heating atmosphere continuous furnace according to claim 1, wherein a combustion chamber for producing the hot gas sent to the radiation radiator tube is provided independently of the heating chamber.
燃焼室が輻射放熱管に設けられている請求項1記載のガ
ス加熱雰囲気連続炉。3. The continuous gas heating atmosphere furnace according to claim 1, wherein a combustion chamber for producing a hot gas sent to the radiation radiating pipe is provided in the radiation radiating pipe.
たは酸素を供給する管が連結されている請求項1記載の
ガス加熱雰囲気連続炉。4. The continuous gas heating atmosphere furnace according to claim 1, wherein a pipe for supplying air or oxygen is connected in the middle of the radiation radiating pipe for sending the hot gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10309352A JP2000105081A (en) | 1998-09-25 | 1998-09-25 | Gas heating atmosphere continuous furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10309352A JP2000105081A (en) | 1998-09-25 | 1998-09-25 | Gas heating atmosphere continuous furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000105081A true JP2000105081A (en) | 2000-04-11 |
Family
ID=17991980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10309352A Pending JP2000105081A (en) | 1998-09-25 | 1998-09-25 | Gas heating atmosphere continuous furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000105081A (en) |
Cited By (10)
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|---|---|---|---|---|
| US6649544B2 (en) | 2001-06-01 | 2003-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
| US6913956B2 (en) | 2001-01-19 | 2005-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7052943B2 (en) | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7115453B2 (en) | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US7118780B2 (en) | 2001-03-16 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment method |
| US7122450B2 (en) | 2001-03-16 | 2006-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Process for manufacturing a semiconductor device |
| US7141822B2 (en) | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US7195990B2 (en) | 2001-01-30 | 2007-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Process for producing a photoelectric conversion device that includes using a gettering process |
| US7202119B2 (en) | 2001-03-26 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US7374976B2 (en) | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
-
1998
- 1998-09-25 JP JP10309352A patent/JP2000105081A/en active Pending
Cited By (21)
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|---|---|---|---|---|
| US6913956B2 (en) | 2001-01-19 | 2005-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7501671B2 (en) | 2001-01-19 | 2009-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7198992B2 (en) | 2001-01-19 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks |
| US7534670B2 (en) | 2001-01-29 | 2009-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US7115453B2 (en) | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US7195990B2 (en) | 2001-01-30 | 2007-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Process for producing a photoelectric conversion device that includes using a gettering process |
| US7736960B2 (en) | 2001-01-30 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Process for producing a photoelectric conversion device |
| US7141822B2 (en) | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US7118780B2 (en) | 2001-03-16 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment method |
| US7122450B2 (en) | 2001-03-16 | 2006-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Process for manufacturing a semiconductor device |
| US7485553B2 (en) | 2001-03-16 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for manufacturing a semiconductor device |
| US7052943B2 (en) | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7974524B2 (en) | 2001-03-16 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment apparatus and heat treatment method |
| US9666458B2 (en) | 2001-03-16 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment apparatus and heat treatment method |
| US7202119B2 (en) | 2001-03-26 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US6649544B2 (en) | 2001-06-01 | 2003-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
| US7022589B2 (en) | 2001-06-01 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
| US7879693B2 (en) | 2001-06-01 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
| US7923352B2 (en) | 2001-06-01 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
| US8318567B2 (en) | 2001-06-01 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
| US7374976B2 (en) | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
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