JP2000286459A - Thermoelectric converter - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To further improve heat radiation efficiency in a thermoelectric conversion device. A radiating side electrode (23a, 23b, 23c) has a projection (232a) part of which is exposed to a refrigerant flow path (11).
(232b, 232c) are formed. Therefore, the refrigerant flowing through the refrigerant flow path 11 and the radiation-side electrodes 23a, 23b,
23c is in direct contact with the projections 232a, 232b, 232c, and the heat radiation side electrodes 23a, 23b, 23c are directly cooled. For this reason, the cooling efficiency does not decrease due to the thermal resistance between the electrode and the substrate or the thermal resistance of the substrate itself as in the related art, and the heat radiation efficiency is greatly improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric converter, and more particularly, to a thermoelectric converter with improved heat radiation efficiency.

[0002]

2. Description of the Related Art When controlling the temperature of a refrigerator or a cooler box using a thermoelectric conversion element exhibiting the Peltier effect, a refrigerant such as water is used for a heat radiating side or both a heat radiating side and a heat absorbing side. Need to be cooled. In this case, as in the technique described in JP-A-10-93150, a refrigerant is brought into contact with a substrate (a heat-radiating substrate and a heat-absorbing substrate) that supports the N-type thermoelectric semiconductor layer and the P-type thermoelectric semiconductor layer to exchange heat. Was carried out to cool.

[0003]

However, in the above-mentioned method, the heat resistance at the contact portion between the thermoelectric semiconductor layer and the substrate and the thermal resistance of the substrate itself are low, so that the heat exchange efficiency is low and the heat radiation efficiency is low. was there.

[0004] Therefore, the present invention has been made in view of the above circumstances, and has as its technical object to further improve the heat radiation efficiency in a thermoelectric converter.

[0005]

Means for Solving the Problems To solve the above technical problems, the invention of claim 1 is directed to a refrigerant flow path through which a refrigerant flows, a heat absorption side electrode, an N-type thermoelectric semiconductor element, and a heat radiation side electrode. A thermoelectric conversion section electrically connected to the P-type thermoelectric semiconductor element in this order, and a heat-radiation-side exposed portion having a part of the heat-radiation-side electrode exposed to the coolant flow path is formed. A thermoelectric conversion device.

According to the above invention, the thermoelectric converter is electrically connected to the refrigerant flow path through which the refrigerant flows, the heat-absorbing electrode, the N-type thermoelectric semiconductor element, the heat-radiating electrode, and the P-type thermoelectric semiconductor element in this order. Since the heat radiation side electrode is provided with a heat radiation side exposed part which is partially exposed to the refrigerant flow path, the refrigerant flowing through the refrigerant flow path is The heat radiation side electrode is in direct contact with the heat radiation side exposed part,
The heat radiation side electrode is directly cooled.

As described above, since the heat radiation side electrode is directly brought into contact with the refrigerant and cooled, the cooling efficiency does not decrease due to the thermal resistance between the electrode and the substrate or the thermal resistance of the substrate itself as in the prior art. The efficiency is dramatically improved.

In this case, it is preferable that an insulating layer is formed on the surface of the exposed portion on the heat radiation side.

According to the present invention, since the insulating layer is formed on the surface of the heat-radiation-side exposed portion of the heat-radiation-side electrode exposed to the refrigerant flow passage, the heat-radiation-side exposed portions of the plurality of heat-radiation-side electrodes are formed in the refrigerant flow passage. When the electrodes are exposed, short-circuiting due to conduction of these heat radiation-side electrodes through the refrigerant can be reliably prevented, and the reliability of the product can be improved.

Further, as in the invention of claim 3, claim 1
In addition to the configuration of the present invention, a heat-absorbing-side exposed portion, a part of which is exposed to the coolant flow path, may be formed in the heat-absorbing-side electrode.

According to the above invention, since not only the heat radiation side electrode but also the heat absorption side electrode is configured to have the heat absorption side exposed portion exposed to the refrigerant channel, the effect of further improving the cooling efficiency can be expected. .

In this case, it is preferable that an insulating layer is formed on the surface of the heat-absorbing-side exposed portion.

According to the present invention, since the insulating layer is formed on the surface of the heat-absorbing side exposed portion of the heat-absorbing side electrode exposed to the refrigerant flow path, the heat-absorbing side exposed portions of the plurality of heat-absorbing side electrodes are connected to the refrigerant flow path. When exposed to, or when the heat-radiation-side exposed portions of the plurality of heat-radiation-side electrodes and the heat-absorbing-side exposed portions of the plurality of heat-absorbing-side electrodes are discharged to the refrigerant flow path, these electrodes conduct through the refrigerant. As a result, a short circuit caused by such a situation can be reliably prevented, and the reliability of the product can be improved.

Examples of the material usable as the insulating layer include epoxy resin, acrylic resin, alumina ceramic, aluminum nitride, and copper oxide. Among them, copper oxide and alumina ceramic are particularly preferable in terms of heat conduction.

According to a fifth aspect of the present invention, in the first or third aspect of the present invention, the volume resistivity of the refrigerant flowing through the refrigerant channel is set to 100 Ωcm or more.

According to the present invention, since the refrigerant flowing through the refrigerant channel has a volume resistivity of 100 Ωcm or more and the refrigerant itself is electrically insulating, the plurality of radiation-side exposed portions of the plurality of radiation-side electrodes are provided. Are exposed to the refrigerant flow path, or when the heat-radiation-side exposed portions of the plurality of heat-radiation-side electrodes and the heat-absorbing-side exposed portions of the plurality of heat-absorbing-side electrodes are discharged to the refrigerant flow path, these electrodes supply the refrigerant. A short circuit due to conduction through the semiconductor device can be reliably prevented, and the reliability of the product can be improved.

Examples of the refrigerant having a volume resistivity of 100 Ωcm or more include silicone oil and florinate. Among them, silicone oil is particularly preferable in terms of environmental resistance.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to embodiments.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
It is an outline sectional view of a thermoelectric conversion device as an example of an embodiment.
In the figure, a thermoelectric conversion device 101 includes a refrigerant jacket 1.
0, and a thermoelectric conversion unit 20 that converts electric energy into heat energy by the Peltier effect.

A refrigerant passage 11 through which the refrigerant flows as shown by the arrows in the drawing is formed inside the refrigerant jacket 10.

The thermoelectric converter 20 includes a heat absorbing side electrode 21a (2
1b, 21c), N-type thermoelectric semiconductor element 22a (22b,
22c), a heat-dissipation-side electrode 23a (23b, 23c), and a P-type thermoelectric semiconductor element 24a (24b, 24c) electrically connected in this order as one unit, and a plurality of these units are connected in series. (3 units are connected in series in the figure). In other words, the rightmost unit (heat-absorbing electrode 21a, N-type thermoelectric semiconductor element 22a, heat-radiating electrode 23a, P-type thermoelectric semiconductor element 24
a is electrically connected in this order) and a unit A, and a central unit (heat-absorbing electrode 21b, N-type thermoelectric semiconductor element 22b, heat-dissipating-side electrode 23b, and P-type thermoelectric semiconductor element 24b are electrically connected in this order). The unit B at the left end (the heat-absorbing electrode 21c, the N-type thermoelectric semiconductor element 22c, the heat-dissipating electrode 23c, and the P-type thermoelectric semiconductor element 24c are electrically connected in this order). ) Is the unit C, the P-type thermoelectric semiconductor element 24a of the unit A is electrically connected to the heat absorption side electrode 21b of the unit B, and the P-type thermoelectric semiconductor element 24b of the unit B is connected to the heat absorption side electrode of the unit C. 21A, the unit A, the unit B, and the unit C are electrically connected in series. Further, the P-type thermoelectric semiconductor element 24c of the unit C is electrically connected to the heat absorbing side electrode 21d.

N-type thermoelectric semiconductor elements 22a, 22b, 22
The c-type and P-type thermoelectric semiconductor elements 24a, 24b, and 24c are made of a known method, for example, a Bi-Te-Se-based material (N-type) or a Bi-Sb-Te-based material (P-type) formed by a Bridgman method. And made into a rectangular parallelepiped or cylindrical shape. Further, the heat radiation side electrodes 23a, 23b, 23c and the heat absorption side electrodes 21a, 21b, 21c, 21d are formed of a metal material having good conductivity, for example, copper.

As shown in the figure, the heat absorbing side electrodes 21a, 21a
Reference numerals b, 21c, and 21d are formed in a flat plate shape, and are attached to one surface of the insulating heat absorbing alumina substrate 25 by screen printing, etching, or the like.
N-type thermoelectric semiconductor elements 22a, 22b, 22c, 22 are placed on heat-absorbing electrodes 21a, 21b, 21c, 21d attached to one surface of heat-absorbing alumina substrate 25, respectively.
d and P-type thermoelectric semiconductor elements 24a, 24b, 24c, 2
Each one end face of 4d is electrically joined by a joining method such as soldering. In this case, only the N-type thermoelectric semiconductor element 22a is electrically connected to the heat absorbing side electrode 21a at the right end in the figure, and only the P-type thermoelectric semiconductor element 24c is electrically connected to the heat absorbing side electrode 21d at the left end in the figure. Have been. On the other hand, both the P-type thermoelectric semiconductor element 24a and the N-type thermoelectric semiconductor element 22b are electrically connected to the heat-absorbing electrode 21b on the left side of the heat-absorbing electrode 21a at a predetermined interval. Both the P-type thermoelectric semiconductor element 24b and the N-type thermoelectric semiconductor element 22c are electrically connected to the heat absorbing side electrode 21c on the right side of the electrode 21d at a predetermined interval.

The other end surfaces of the N-type thermoelectric semiconductor element 22a joined to the heat absorption side electrode 21a and the P-type thermoelectric semiconductor element 24a joined to the heat absorption side electrode 21b are electrically connected to the heat dissipation side electrode 23a by soldering or the like. Are joined together. Similarly, the other end surfaces of the N-type thermoelectric semiconductor element 22b joined to the heat-absorbing electrode 21b and the P-type thermoelectric semiconductor element 24b joined to the heat-absorbing electrode 21c are electrically connected to the heat-dissipating electrode 23b by soldering or the like. Is joined to. Similarly, the other end surfaces of the N-type thermoelectric semiconductor element 22c joined to the heat-absorbing electrode 21c and the P-type thermoelectric semiconductor element 24c joined to the heat-absorbing electrode 21d are electrically connected to the heat-dissipating electrode 23c by soldering or the like. Is joined to.

The heat radiation side electrodes 23a, 23b and 23c are formed in the same shape in this embodiment. These heat-dissipation-side electrodes 23a, 23b, and 23c have a flat plate shape, and have flat surfaces 231a and 231 joined to each thermoelectric semiconductor element on one surface side.
b, 231c, and projections 232a, 232b, 232c protruding from the other side of the flat plate portion, and are manufactured by, for example, rolling.

In this embodiment, the protrusions 232a, 232b, 232c of each of the heat radiation side electrodes 23a, 23b, 23c are coated with an epoxy resin in this embodiment, so that the surface of the insulating layer
33a, 233b and 233c are formed. The insulating layers 233a, 233b, and 233c may be made of an acrylic resin, a urethane resin, a nylon resin, or the like, in addition to the epoxy resin, or may be formed as a copper oxide film to form an insulating layer.

In this embodiment, the refrigerant jacket 10 is made of PP.
It is produced by injection molding S resin. The coolant jacket 10 has holes 10a at predetermined intervals.
10b and 10c are formed, and each of the holes 10a and 1c is formed.
Projections 232a, 232b, 232c of the heat radiation side electrodes 23a, 23b, 23c are inserted into 0b, 10c. Thereby, the projections 232a, 232b, 232c
Will be exposed to the refrigerant flow path 11 in the refrigerant jacket 10, and the projections 232a, 232b, and 232c will be the heat radiation side exposed part of the present invention. Also, the refrigerant jacket 10
Of each hole 10a, 10b, 10c and each heat radiation side electrode 23a,
Projection portions 232a, 232b, 232c of 23b, 23c
Is sealed with an insulating material such as a silicone resin. This seal can be made of an epoxy resin or the like other than the silicone resin, and can also be a seal using an O-ring.

A lead wire 26 is electrically connected to the heat absorbing side electrode 21a. A lead wire 27 is electrically connected to the heat-absorbing electrode 21d. The lead wire 26 is electrically connected to a + terminal of a power supply (not shown). The lead wire 27 is electrically connected to a negative terminal of a power supply (not shown). Therefore, when a predetermined potential difference is applied between the + terminal and the − terminal in a power supply (not shown), the thermoelectric converter 20 is energized from the lead wire 26. This energization causes the N-type thermoelectric semiconductor element and the P-type thermoelectric semiconductor element to cause a Peltier effect, and the heat-absorbing electrodes 21a, 21b, 21
Heat is absorbed at the points c and 21d to cool the area, and heat is radiated at the heat radiation side electrodes 23a, 23b and 23c to heat the area. The heat generated in the heat radiation side electrodes 23a, 23b, 23c is transferred to the refrigerant flowing through the refrigerant flow path 11 in the refrigerant jacket 10, and thereby the heat radiation side electrodes 23a, 23c
b and 23c are cooled.

FIG. 2 is a schematic diagram showing a state in which the thermoelectric converter 101 having the above configuration is attached to a refrigerator. In FIG. 2, a refrigerator 200 has a housing 201 having an internal space.
Is provided. The internal space of the housing 201 is
2 and the space on the left side of the drawing is the refrigerator compartment 2
In FIG. 10, the space on the right side in the figure is a drive chamber 220.

In the refrigerator compartment 210, a cooling plate 211 is arranged as shown in FIG. This cooling plate 211
Is transferred by convection into the refrigerator compartment 210,
The inside is cooled. In this example, the volume in the refrigerator compartment 210 is 40 liters.

The drive chamber 220 houses a refrigerant circuit 221. The refrigerant circulation circuit 221 has a refrigerant circulation path 2
22, a pump 223 interposed in the middle of the refrigerant circulation flow path 222 and serving as a drive source for circulating the refrigerant in the refrigerant circulation flow path 222; It is mainly composed of a cooling fan 224 for releasing the transferred heat to the outside. In this example, the refrigerant circuit 2
Water was used as a refrigerant circulating through 21.

The refrigerant jacket 10 of the thermoelectric converter 101 described above is connected in the middle of the refrigerant circulation channel 222. As shown in the drawing, one open end 10a and the other open end 10b of the refrigerant jacket 10 are connected to the refrigerant circulation flow path 222.
The refrigerant in the refrigerant circulation channel 222 flows into the refrigerant jacket 10 from one open end 10a of the refrigerant jacket 10 and flows through the refrigerant channel 11 in the refrigerant jacket 10 while being connected to the other open end. From 10b, the refrigerant flows into the refrigerant circulation channel 222 again.

The hole 20 is formed substantially at the upper center of the partition plate 202.
The thermoelectric conversion device 101 is mounted so as to fit into the hole 203. Then, the substrate 25 made of alumina on the heat absorption side of the thermoelectric converter 101 is
10, while being in contact with and joined to a cooling plate 211 in the cooling chamber 22.
0 is connected in the middle of the refrigerant circulation channel 222.

In the refrigerator 200 having the above configuration, when power is supplied from the power supply (not shown) to the thermoelectric converter 20 of the thermoelectric converter 101, the heat absorbing side electrodes 21a,
Heat is absorbed by the sides 1b, 21c and 21d to cool the surroundings, and heat is released by the heat radiation side electrodes 23a, 23b and 23c to heat the surroundings. Cooling heat obtained by absorbing heat on the side of the heat absorbing electrodes 21a, 21b, 21c, 21d is transmitted to the cooling plate 211 through the heat absorbing alumina substrate 25, and the cooling plate 211 is cooled. Cold heat of the cooling plate 211 is transmitted to the refrigerator 210 by convection heat transfer, and the refrigerator 210 is cooled.

On the other hand, when the pump 223 is driven, the refrigerant flows through the refrigerant circulation passage 222 and the refrigerant circulation passage 22.
The refrigerant circulates in a refrigerant flow passage 11 in a refrigerant jacket 10 connected to the refrigerant jacket 2. This refrigerant is supplied to the radiation-side electrodes 23a, 23b, 23
The heat generated by radiating the heat on the c side is recovered in the refrigerant jacket 10, and the cooling efficiency is improved by preventing the heat radiation side electrodes 23a, 23b, and 23c from becoming high in temperature. In this case, the protrusions 2 as heat-radiation-side exposed portions, a part of which is exposed to the coolant channel 11, are formed on the heat-radiation-side electrodes 23a, 23b, and 23c.
Since 32a, 232b, and 232c are formed, the refrigerant flowing through the refrigerant flow path 11 and the radiation-side electrodes 23a, 23b,
23c is in direct contact with the projections 232a, 232b, 232c, and the heat radiation side electrodes 23a, 23b, 23c are directly cooled. Thus, the radiation side electrodes 23a, 23
Since b and 23c are cooled by directly contacting the refrigerant at the protrusions 232a, 232b and 232c, the cooling efficiency does not decrease due to the thermal resistance between the electrode and the substrate or the thermal resistance of the substrate itself as in the related art. As a result, the heat radiation efficiency is dramatically improved.

In the case of this embodiment, a plurality of heat radiation side electrodes 23 are provided.
Projections 232a, 232b, 23 of a, 23b, 23c
2c is exposed in the coolant channel 11, but each protrusion 23
Since the insulating layers 233a, 233b, 233c are formed on the surfaces of 2a, 232b, 232c as shown in FIG. 1, these heat radiation side electrodes 23a, 23b, 23c are formed.
Does not occur due to conduction at the protrusions 232a, 232b, and 232c.

In the refrigerator having the above configuration and operation, the power consumption of the thermoelectric converter 20 when the temperature in the refrigerator was kept at 5 ° C. was measured. As a result, the power consumption in the steady state was 70 W. On the other hand, as will be described later, the result of measuring the power consumption under the same conditions as above when the thermoelectric semiconductor having the conventional structure was attached to the refrigerator was 100
Since it is W, it can be seen from this result that the thermoelectric conversion device of this example has improved heat radiation efficiency.

As described above, according to the present embodiment, the refrigerant jacket 10 in which the refrigerant flow path 11 through which the refrigerant flows is formed,
Heat-absorbing electrode 21a (21b, 21c, 21d), N-type thermoelectric semiconductor element 22a (22b, 22c) and heat-radiating electrode 2
3a (23b, 23c) and a P-type thermoelectric semiconductor element (24
a, 24b, and 24c) in this order, and a thermoelectric conversion unit 20 that is electrically connected in this order.
b, 23c) have projections 232a (232b, 232) serving as heat-radiation-side exposed portions, some of which are exposed to the coolant channel 11.
c), the refrigerant flowing in the refrigerant flow path 11 and the radiation-side electrodes 23a, 23b, 2
3c is in direct contact with the projections 232a, 232b, 232c, and the radiation-side electrodes 23a, 23b, 23c are directly cooled. For this reason, the cooling efficiency does not decrease due to the thermal resistance between the electrode and the substrate or the thermal resistance of the substrate itself as in the related art, and the heat radiation efficiency is greatly improved.

The projections 232a, 232b, 232
Since the insulating layers 233a, 233b and 233c are formed on the surface of the
a, 232b, and 232c can be reliably prevented from being short-circuited due to conduction through the refrigerant, and the reliability of the product can be improved.

(Second Embodiment) Next, a second embodiment of the present invention will be described. This embodiment has basically the same structure as that of the first embodiment. However, it is the configuration of the heat radiation side electrode and the type of refrigerant flowing in the refrigerant jacket. Hereinafter, the differences will be mainly described.

FIG. 3 is a schematic sectional view of a thermoelectric converter according to a second embodiment of the present invention. In the figure, a thermoelectric conversion device 102 includes a refrigerant jacket 30 and a thermoelectric conversion unit 40 that converts electric energy into heat energy by the Peltier effect.

A refrigerant passage 31 through which the refrigerant flows as shown by the arrow in the drawing is formed inside the refrigerant jacket 30.

The thermoelectric conversion section 40 includes a heat absorbing side electrode 41a (4
1b, 41c, 41d), N-type thermoelectric semiconductor element 42a
(42b, 42c), the heat radiation side electrode 43a (43b, 43).
c), one unit in which the P-type thermoelectric semiconductor elements 44a (44b, 44c) are electrically connected in this order is defined as one unit.
A plurality of these units are connected in series (three units are connected in series in the figure). Since these connection configurations are the same as those of the first embodiment, a specific description thereof will be omitted.

As shown in the figure, the heat absorbing side electrodes 41a, 41
Reference numerals b, 41c, and 41d are formed in a flat plate shape, and are attached to one surface of the insulating heat absorbing alumina substrate 45 by screen printing, etching, or the like.
The connection method and connection configuration between each heat-absorbing electrode and each thermoelectric semiconductor element, and the connection method and connection configuration between each heat-dissipation electrode and each thermoelectric semiconductor element are the same as those in the first embodiment. Description is omitted.

The heat radiation side electrodes 43a, 43b, 43c are formed in the same shape in this embodiment. These heat radiation side electrodes 43a, 43b, 43c are formed in a flat plate shape.

The coolant jacket 30 has holes 30 at predetermined intervals.
a, 30b and 30c are formed. This hole 30a,
The holes 30a and 30c are formed in substantially the same shape as the heat radiation side electrodes 43a, 43b and 43c.
The heat radiation side electrodes 43a, 43b, 43c are fitted into b, 30c. Thereby, the heat radiation side electrodes 43a, 43
The surfaces 431a, 431b, and 431c of the heat radiation electrodes 43a, 43b, and 43c are exposed to the refrigerant flow path 31 in the refrigerant jacket 30.
1a, 431b, and 431c are the heat-radiation-side exposed portions of the present invention. In addition, each hole 30a, 30b of the refrigerant jacket 30,
30c and one surface 4 of each heat radiation side electrode 43a, 43b, 43c
The gaps between 31a, 431b and 431c are sealed with an insulating material such as silicone resin.
This seal can be made of an epoxy resin or the like other than the silicone resin, and can also be a seal using an O-ring.

The lead wire 46 is electrically connected to the heat absorbing side electrode 41a. A lead wire 47 is electrically connected to the heat-absorbing electrode 41d. The lead wire 46 is electrically connected to a + terminal of a power supply (not shown). The lead wire 47 is electrically connected to a negative terminal of a power supply (not shown). Therefore, when a predetermined potential difference is applied between the + terminal and the − terminal in a power supply (not shown), the power is supplied to the thermoelectric converter 40 from the lead wire 46. This energization causes the N-type thermoelectric semiconductor element and the P-type thermoelectric semiconductor element to cause a Peltier effect, and the heat-absorbing electrodes 41a, 41b, 41
Heat is absorbed by the heat-absorbing electrodes 43a, 43b, and 43c to heat the surrounding area. The heat generated in the heat radiation side electrodes 43a, 43b, 43c is transferred to the refrigerant flowing through the refrigerant flow path 31 in the refrigerant jacket 30, and thereby the heat radiation side electrodes 43a, 43
b and 43c are cooled.

FIG. 4 is a schematic view showing a state in which the thermoelectric converter having the above-mentioned configuration is attached to a refrigerator. FIG. 4 is basically the same as the configuration shown in FIG. 2 described in the first embodiment, and the difference is that the configuration of the thermoelectric converter attached to the refrigerator is shown in FIG. It is. Therefore, the same parts as those in the configuration shown in FIG. 2 are denoted by the same reference numerals, and the detailed description thereof will be omitted. In this example, as the refrigerant circulating in the refrigerant circuit, the volume resistivity is 1
A silicone oil of 00000 Ωcm was used.

In the refrigerator 200, when power is supplied to the thermoelectric conversion section 40 of the thermoelectric conversion device 102 from a power supply (not shown), the heat absorbing side electrodes 41a, 41b, 41 due to the Peltier effect.
c, 41 d to absorb heat and cool the surroundings,
Heat is radiated on the sides a, 43b, and 43c to heat the periphery. Cooling heat obtained by absorbing heat on the side of the heat-absorbing electrodes 41a, 41b, 41c, 41d is transmitted to the cooling plate 211 via the heat-absorbing alumina substrate 45, and the cooling plate 211 is cooled. Cold heat of the cooling plate 211 is transmitted to the refrigerator 210 by convection heat transfer, and the refrigerator 210 is cooled.

On the other hand, when the pump 223 is driven, the silicone oil as the refrigerant is supplied to the refrigerant circulation passage 22.
2 and circulates in the refrigerant channel 31 in the refrigerant jacket 30 connected to the refrigerant circulation channel 222. The refrigerant recovers heat generated by radiating heat on the side of the radiation-side electrodes 43a, 43b, and 43c in the refrigerant jacket 30, and collects the heat on the radiation-side electrodes 43a, 43b, and 43c.
The cooling efficiency is improved by preventing the temperature of 3b and 43c from becoming high. In this case, the radiation side electrodes 43a, 43
Since b, 43c have one surface 431a, 431b, 431c as a heat radiation side exposed portion, a part of which is exposed to the refrigerant flow channel 31, the refrigerant flowing through the refrigerant flow channel 31 and the heat radiation side electrodes 43a, 43b, 43c is one side 431a,
At 431b and 431c, the heat radiation side electrode 4
3a, 43b, 43c are cooled directly. Thus, the heat radiation side electrodes 43a, 43b, 43c are connected to one surface 431a,
Since the cooling is performed by directly contacting the refrigerant at 431b and 431c, the cooling efficiency does not decrease due to the thermal resistance between the electrode and the substrate or the thermal resistance of the substrate itself as in the related art, and thus the radiation efficiency is dramatically improved. Is what you do.

In the case of this example, a plurality of heat radiation side electrodes 43 are provided.
a, 43b, 43c, one surface 431a, 431b, 431
Although c is exposed in the coolant channel 31, the volume specific resistance is 1000 in this example as the coolant flowing in the coolant channel 31.
Since the silicone oil of 00 Ωcm is used, these heat radiation side electrodes 43a, 43b, 43c
There is no problem of short circuit due to conduction at 1a, 431b and 431c.

In the refrigerator having the above configuration and operation, the power consumed by the thermoelectric converter when the temperature in the refrigerator was kept at 5 ° C. was measured. As a result, the power consumption in the steady state was 85 W. On the other hand, as will be described later, the result of measuring the power consumption under the same conditions as described above when the thermoelectric semiconductor having the conventional structure is attached to the refrigerator is 100 W. Indicates that the heat radiation efficiency is improved.

As described above, according to the present embodiment, the refrigerant jacket 30 in which the refrigerant flow path 31 through which the refrigerant flows is formed,
Heat-absorbing side electrode 41a (41b, 41c, 41d), N-type thermoelectric semiconductor element 42a (42b, 42c) and heat-radiating side electrode 4
3a (43b, 43c) and a P-type thermoelectric semiconductor element (44
a, 44b, 44c) in this order, and a thermoelectric conversion section 40, and a heat radiation side electrode 43a (43
b, 43c) have a surface 431a (431b, 431b) as a heat radiation side exposed portion, a part of which is exposed to the refrigerant flow path 31.
c), the refrigerant flowing through the refrigerant flow path 31 and the radiation-side electrodes 43a, 43b,
3c is in direct contact with each surface 431a, 431b, 431c, and the heat radiation side electrodes 43a, 43b, 43c are directly cooled. For this reason, the cooling efficiency does not decrease due to the thermal resistance between the electrode and the substrate or the thermal resistance of the substrate itself as in the related art, and the heat radiation efficiency is greatly improved.

Also, since silicone oil having a volume resistivity of 100,000 Ωcm is used as the refrigerant flowing through the refrigerant channel 31, the heat radiation side electrodes are conducted between the respective surfaces 431a, 431b, 431c via the refrigerant. As a result, a short circuit caused by such a situation can be reliably prevented, and the reliability of the product can be improved.

(Third Embodiment) Next, a third embodiment of the present invention will be described. This embodiment has basically the same structure as that of the first embodiment. The configuration of the side electrode has a flat plate shape similar to the configuration of the heat radiation side electrode, and is configured by a flat plate portion to be joined to each thermoelectric semiconductor element on one surface side, and a protrusion portion protruding from the other surface side of the flat plate portion. And that the protrusion of the heat-absorbing-side electrode is also exposed to the coolant flow path of the coolant jacket. Hereinafter, the differences will be mainly described.

FIG. 5 is a schematic sectional view of a thermoelectric converter according to a third embodiment of the present invention. In the figure, a thermoelectric conversion device 103 includes a heat-radiation-side refrigerant jacket 50, a heat-absorption-side refrigerant jacket 60, and a thermoelectric conversion unit 70 that converts electric energy into heat energy by the Peltier effect.

Refrigerant channels 51 and 61 through which the refrigerant flows as indicated by arrows are formed inside the heat-radiating-side refrigerant jacket 50 and the heat-absorbing-side refrigerant jacket 60.

The thermoelectric conversion section 70 includes a heat absorbing side electrode 71a (7
1b, 71c, 71d), N-type thermoelectric semiconductor element 72a
(72b, 72c), the heat radiation side electrode 73a (73b, 73)
c), a unit in which the P-type thermoelectric semiconductor elements 74a (74b, 74c) are electrically connected in this order is defined as one unit.
A plurality of these units are connected in series (three units are connected in series in the figure). Since these connection configurations are the same as those of the first embodiment, a specific description thereof will be omitted.

As shown in the figure, the heat absorbing side electrodes 71a, 71a
b, 71c, 71d are heat-absorbing-side electrodes 7 at the illustrated ends.
1a, 71d, and heat-absorbing-side electrodes 71b, 7 in the intermediate portion.
1c has a different shape. The heat-absorbing electrodes 71a and 71d at the illustrated ends are formed in a flat plate shape. On the other hand, the heat-absorbing-side electrodes 71b and 71c in the middle portion are formed by flat plate-shaped portions 711b and 711c having a flat plate shape and a protrusion 71 protruding from one surface of the flat plate-shaped portions 711b and 711c.
2b and 712c.

An N-type thermoelectric semiconductor 72 is provided on the heat absorbing side electrode 71a.
a is electrically joined by a joining method such as soldering. The P-type thermoelectric semiconductor 74a and the N-type thermoelectric semiconductor 72b are electrically joined to a surface of the heat-absorbing electrode 71b opposite to the surface of the flat plate-shaped portion 711b on which the protrusion 712b is formed by a joining method such as soldering. I have. The P-type thermoelectric semiconductor 74b and the N-type thermoelectric semiconductor 72c are electrically joined to a surface of the heat-absorbing electrode 71c opposite to the surface of the flat plate-shaped portion 711c on which the protrusion 712c is formed by a joining method such as soldering. I have. A P-type thermoelectric semiconductor 74c is electrically connected to the heat absorbing side electrode 71d by a bonding method such as soldering.

The other end surfaces of the N-type thermoelectric semiconductor element 42a joined to the heat absorption side electrode 41a and the P-type thermoelectric semiconductor element 44a joined to the heat absorption side electrode 41b are electrically connected to the heat radiation side electrode 43a by soldering or the like. Are joined together. Similarly, the other end surfaces of the N-type thermoelectric semiconductor element 42b joined to the heat-absorbing electrode 41b and the P-type thermoelectric semiconductor element 44b joined to the heat-absorbing electrode 41c are electrically connected to the heat-dissipating electrode 43b by soldering or the like. Is joined to. Similarly, the other end surfaces of the N-type thermoelectric semiconductor element 42c joined to the heat-absorbing electrode 41c and the P-type thermoelectric semiconductor element 44c joined to the heat-absorbing electrode 41d are electrically connected to the heat-dissipating electrode 43c by a joining method such as soldering. Is joined to.

The heat radiation side electrodes 73a, 73b, 73c are formed in the same shape as the heat absorption side electrodes 71b, 71c. That is, the flat plate-shaped portions 731a, 73 exhibiting a flat plate shape
1b, 731c and the flat plate-shaped portions 731a, 731b,
Projection portions 732a, 732 protruding from one surface of 731c
b, 732c.

Holes 50a, 50b, and 50c are formed at predetermined intervals in the radiation-side refrigerant jacket 50. This hole 5
0a, 50b, 50c are radiation side electrodes 73a, 73b, 7
The projections 732a, 732b, and 732c of FIG. 3c have substantially the same cross-sectional shape as the projections 732a, 732b, and 732c.
The projections 732a, 732b, 732c of the heat radiation side electrodes 73a, 73b, 73c are fitted into 0b, 50c. As a result, the projections 732a, 732b, 732c of the radiation side electrodes 73a, 73b, 73c are exposed to the refrigerant flow path 51 in the refrigerant jacket 50, and the projections 732a, 732b, 732c are exposed to the radiation side of the present invention. Department.

The heat absorbing side refrigerant jacket 60 has holes 60b, 6
0c is formed. The holes 60b and 60c have substantially the same cross-sectional shapes as the protrusions 712b and 712c of the heat-absorbing electrodes 71b and 71c.
b, 60c, the protrusions 712 of the heat-absorbing electrodes 71b, 71c.
b, 712c are fitted. As a result, the protrusions 712b, 712c of the heat-absorbing electrodes 71b, 71c are exposed to the refrigerant flow channel 61 in the refrigerant jacket 60, and the protrusions 712b, 712c serve as heat-exposed-side exposed portions of the present invention.

Each of the holes 5 of the refrigerant jackets 50, 60
0a, 50b, 50c, 60b, 60c and each projection 73
The gaps between 1a, 731b, 731c, 712b, and 712c are sealed with an insulating material such as a silicone resin. This seal can be made of an epoxy resin or the like other than the silicone resin, and can also be a seal using an O-ring.

The lead wire 76 is electrically connected to the heat absorbing side electrode 71a. A lead wire 77 is electrically connected to the heat-absorbing-side electrode 71d. The lead wire 76 is electrically connected to a + terminal of a power supply (not shown). The lead wire 77 is electrically connected to a negative terminal of a power supply (not shown). Therefore, when a predetermined potential difference is applied between the + terminal and the − terminal in a power supply (not shown), the power is supplied to the thermoelectric converter 70 from the lead wire 76. This energization causes the N-type thermoelectric semiconductor element and the P-type thermoelectric semiconductor element to cause a Peltier effect, so that the heat-absorbing electrodes 71a, 71b, 71
Heat is absorbed by the heat-absorbing electrodes 73a, 73b, and 73c to absorb heat and absorb the heat.

The heat generated at the heat radiation side electrodes 73 a, 73 b, and 73 c is transferred to the refrigerant passage 51 in the refrigerant jacket 50.
Is passed to the refrigerant flowing therethrough.
a, 73b and 73c are cooled. In this case,
Protrusions 732 serving as heat-radiation-side exposed portions of which the heat-radiation-side electrodes 73a, 73b, and 73c are partially exposed to the coolant flow path 51
a, 732b, and 732c are formed, so that the refrigerant flowing through the refrigerant channel 51 and the radiation-side electrodes 73a, 73b, 73
c is in direct contact with the projections 732a, 732b, 732c, and the radiation-side electrodes 73a, 73b, 73c are directly cooled. For this reason, the cooling efficiency does not decrease due to the thermal resistance between the electrode and the substrate or the thermal resistance of the substrate itself as in the related art, and the heat radiation efficiency is greatly improved.

Also, since the heat absorbing side electrodes 71b and 71c are formed with the protrusions 712b and 712c as heat absorbing side exposed portions that are partially exposed to the refrigerant flow passage 61, the heat resistance on the heat absorbing side is reduced. As a result, the cooling performance is further improved.

Although a specific explanation is omitted in this embodiment, in order to prevent a short circuit between the projections exposed in the refrigerant flow passages 51 and 61, the surface of each projection is provided with the surface of the first embodiment. The insulating layer is formed as described above. Alternatively, a refrigerant having a volume resistivity of 100 Ωcm or more may be used without forming an insulating layer.

In the first to third embodiments,
Although the thermoelectric conversion unit has been described in which a P-type thermoelectric semiconductor element and an N-type thermoelectric semiconductor element are electrically connected in series in one row, the present invention is not limited to this. The electrical coupling with the thermoelectric semiconductor element may be folded back and coupled in a plurality of rows.

(Comparative Example) FIG. 6 is a schematic diagram showing a configuration of a thermoelectric converter in a comparative example. In the figure, in the thermoelectric conversion device 110 of the present comparative example, the heat absorbing side electrode 81 and the heat radiating side electrode 82 are formed in a plate shape, the heat absorbing side electrode 81 is formed on the heat absorbing side alumina substrate 83, and the heat radiating side electrode 82 is formed on the heat radiating side. It is bonded to an alumina substrate 84. As described in the above embodiment, the N-type and P-type thermoelectric semiconductor elements 85 and 86 are electrically connected between the heat absorption side electrode 81 and the heat radiation side electrode 82 to form a thermoelectric conversion section 80. I have. One surface of the heat-dissipating alumina substrate 84 is exposed to the coolant channel 91 in the coolant jacket 90. With this configuration, the heat radiation side electrode 82 is connected to the heat radiation side alumina substrate 8.
4 indirectly through the cooling.

The thermoelectric converter 110 having the above configuration is mounted on a refrigerator as in FIG. 2 or FIG.
The power consumption in the thermoelectric converter when it was kept at was measured. As a result, the power consumption in the steady state was 100 W.

[0073]

As described above, according to the present invention,
In the thermoelectric conversion device, the heat radiation efficiency can be further improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a thermoelectric conversion device according to a first embodiment of the present invention.

FIG. 2 is a schematic sectional view of a refrigerator to which the thermoelectric converter according to the first embodiment of the present invention is attached.

FIG. 3 is a schematic sectional view of a thermoelectric conversion device according to a second embodiment of the present invention.

FIG. 4 is a schematic sectional view of a refrigerator to which a thermoelectric converter according to a second embodiment of the present invention is attached.

FIG. 5 is a schematic sectional view of a thermoelectric conversion device according to a third embodiment of the present invention.

FIG. 6 is a schematic sectional view of a thermoelectric conversion device in a comparative example.

[Explanation of symbols]

10, 30, 50, 60 ... refrigerant jackets 11, 31, 51, 61 ... refrigerant flow paths 20, 40, 70 ... thermoelectric converters 21a, 21b, 21c, 21d, 41a, 41b, 4
1c, 41d, 71a, 71b, 71c, 71d ...
Endothermic electrodes 22a, 22b, 22c, 42a, 42b, 42c, 7
2a, 72b, 72c... N-type thermoelectric semiconductor elements 23a, 23b, 23c, 43a, 43b, 43c, 7
3a, 73b, 73c: heat radiation side electrodes 24a, 24b, 24c, 44a, 44b, 44c, 7
4a, 74b, 74c... P-type thermoelectric semiconductor elements 232a, 232b, 232c, 732a, 732b,
732c: Projection (heat-exposed side exposed portion) 711c, 712c ... Projection (heat-exposed side exposed portion) 233a, 233b, 233c: Insulating layer 431a, 431b, 431c (of the heat-radiation side electrode)
One side (radiation side exposed part)

Claims (5)

[Claims] 1. A refrigerant flow path through which a refrigerant flows, and a thermoelectric conversion section formed by electrically connecting a heat absorption side electrode, an N-type thermoelectric semiconductor element, a heat radiation side electrode, and a P-type thermoelectric semiconductor element in this order. A thermoelectric conversion device comprising: a heat-radiation-side electrode, wherein a heat-radiation-side exposed portion, a part of which is exposed to the refrigerant flow path, is formed. 2. The thermoelectric conversion device according to claim 1, wherein an insulating layer is formed on a surface of the heat radiation side exposed portion. 3. The thermoelectric conversion device according to claim 1, wherein the heat-absorbing side electrode has a heat-absorbing-side exposed portion that is partially exposed to the coolant flow path. 4. The thermoelectric conversion device according to claim 3, wherein an insulating layer is formed on a surface of the heat absorbing side exposed portion. 5. The thermoelectric converter according to claim 1, wherein a volume resistivity of the refrigerant flowing through the refrigerant channel is 100 Ωcm or more.