JP2000208536A - Semiconductor device manufacturing method - Google Patents

Abstract

An object of the present invention is to provide a method of manufacturing a semiconductor device with high production efficiency, in which a plurality of semiconductor elements can be resin-sealed at a time on a printed circuit board. A semiconductor having a plurality of semiconductor elements mounted on the wiring circuit board by contacting electrode portions of the plurality of semiconductor elements positioned at predetermined intervals with wiring electrodes of the wiring circuit board. The wired circuit board 2 on which the element 5 is mounted is prepared. Next, a columnar pellet 8 which is a sealing resin composition is placed between the plurality of semiconductor elements 5 and heated and melted to form a gap between the printed circuit board 2 and the plurality of semiconductor elements 5. Then, the sealing resin composition in the molten state is filled and cured, and the individual voids formed by the printed circuit board 2 and the plurality of semiconductor elements 5 are each resin-sealed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which a plurality of semiconductor elements can be resin-sealed at a time on a mother board or a daughter board in a face-down structure.

[0002]

2. Description of the Related Art In recent years, there has been a demand for improvement in the performance of semiconductor devices, in which a semiconductor element is mounted on a mother board or a daughter board having a wiring circuit formed in a face-down structure (flip chip method, direct chip attach method). Etc.) are attracting attention. In a semiconductor device obtained by such a method, after one semiconductor element is mounted on one printed circuit board, a gap between the printed circuit board and the semiconductor element is filled with a liquid resin material or a solid resin material. It was manufactured by sealing with various sealing materials.

[0003]

However, the above-mentioned conventional manufacturing method, in which one semiconductor element is mounted on each wiring circuit board and sealed with a resin, has low production efficiency and has problems in workability and the like. Therefore, there is a demand for a more efficient method for manufacturing a semiconductor device.

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method of manufacturing a highly efficient semiconductor device capable of sealing a plurality of semiconductor elements on a printed circuit board at a time. I do.

[0005]

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention comprises the steps of contacting electrode portions of a plurality of semiconductor elements positioned at predetermined intervals with wiring electrodes of a printed circuit board. A semiconductor element-mounted wiring circuit board is prepared by mounting the plurality of semiconductor elements on the substrate, and a solid sealing resin composition at room temperature is interposed between any of the plurality of semiconductor elements. By mounting and melting by heating, the gap between the printed circuit board and the plurality of semiconductor elements is filled with the molten sealing resin composition and cured, and at least the printed circuit board and the plurality of semiconductor elements are cured. A configuration is adopted in which individual voids formed in the semiconductor element are each resin-sealed.

That is, according to the present invention, there is provided a semiconductor device having a plurality of semiconductor elements mounted on the substrate by bringing the electrode portions of a plurality of semiconductor elements positioned at predetermined intervals into contact with the wiring electrodes of the printed circuit board. Prepare a printed circuit board.
Then, by placing a sealing resin composition that is solid at normal temperature between any of the plurality of semiconductor elements and melting by heating, the wiring circuit board and the plurality of semiconductor elements are bonded together. The voids are filled with the molten sealing resin composition and cured, and at least individual voids formed by the printed circuit board and the plurality of semiconductor elements are each resin-sealed. In this way, a semiconductor device is manufactured by cutting a semiconductor device having a plurality of semiconductor elements mounted on a substrate for each semiconductor element. For this reason, many semiconductor elements can be resin-sealed at once, and the production efficiency is improved.

In the method of manufacturing a semiconductor device of the present invention, the sealing resin composition in the molten state fills the individual voids formed by the printed circuit board and the plurality of semiconductor elements, and forms the plurality of semiconductor elements. Filling the gaps between the semiconductor elements also facilitates resin sealing of the individual gaps formed by the printed circuit board and the plurality of semiconductor elements and the gaps between the plurality of semiconductor elements.

In the method of manufacturing a semiconductor device according to the present invention,
The solid-state sealing resin composition at room temperature, the individual gaps formed by the wiring circuit board and the plurality of semiconductor elements, when the amount can fill the gap between the plurality of semiconductor elements, the gap and The resin sealing of the gap is easily and reliably performed.

In the method for manufacturing a semiconductor device according to the present invention, a frame for preventing the molten sealing resin composition from flowing out is provided in advance on an outer peripheral edge of the wiring circuit board, and a gap between the wiring circuit board and the semiconductor element is provided. After filling the sealing resin composition in the molten state, the step of removing the frame from the wiring circuit board, the sealing resin composition in the molten state, the wiring circuit board and a plurality of semiconductor elements It is possible to uniformly fill the formed voids and the gaps between the plurality of semiconductor elements.

[0010] Since the encapsulating resin composition which is solid at room temperature has a characteristic (X) of a gel time at 150 ° C of 5 to 30 minutes, a curing reaction occurs slowly, and the resin composition for the wiring circuit board is formed. The gap between the semiconductor elements is uniformly filled with the sealing resin composition. Further, it is possible to easily set the conditions for the sealing operation.

[0011]

Next, embodiments of the present invention will be described in detail.

In the method of manufacturing a semiconductor device according to the present invention, the sealing resin composition used for sealing at least the gap between the wiring circuit board and the semiconductor element with a resin is not particularly limited, and various sealing methods are used. Although a material is used, an epoxy resin composition is generally used.

The epoxy resin composition comprises an epoxy resin (a component), a curing agent (b component), and an inorganic filler (c
Component) and shows a solid at normal temperature. For example, a rolled sheet is punched into various desired shapes and provided as pellets. In addition, the said normal temperature specifically means 20 degreeC.

The epoxy resin (component (a)) is not particularly limited, and includes various conventionally known epoxy resins. Among them, a crystalline epoxy resin and a bifunctional epoxy resin that is solid at room temperature are used. Preferably, particularly preferably, from the viewpoint of low melt viscosity, an epoxy resin having a structure represented by the following general formulas (1), (2), and (3) is exemplified. These may be used alone or in combination of two or more.

[0015]

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[0016]

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[0017]

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In the epoxy resin having the structure represented by the above formulas (1) to (3), the epoxy equivalent is preferably 150 to 230.
It is preferable to use those having a melting point of 60 to 160 ° C. in g / eq.

The curing agent used together with the epoxy resin (component (a)) acts as a curing agent for the epoxy resin, and includes an acid anhydride-based curing agent, a phenol resin and the like. It is preferably used.

The phenol resin is not particularly limited, and a commonly used phenol resin is preferably used. In particular, a low-viscosity phenol resin is preferably used, and specifically, a novolak-type phenol resin is preferably used. And among the above novolak-type phenol resins, it is preferable to use those having a hydroxyl equivalent of 80 to 200 g / eq and a softening point of 80 ° C. or lower. More preferably, the hydroxyl group equivalent is 90 to 180 g / eq and the softening point is 50 to 70 ° C. Particularly preferably, the hydroxyl equivalent is 100 to 170 g / e.
In q, the softening point is 55-65 ° C.

The epoxy resin (a component) and the curing agent (b)
When a phenol resin is used as a curing agent, the mixing ratio of the component) is preferably set such that the hydroxyl group equivalent in the phenol resin is in the range of 0.5 to 1.6 with respect to 1 equivalent of the epoxy group in the epoxy resin. More preferably 0.8-1.
2 is set.

The inorganic filler (component c) used together with the components a and b is not particularly limited, and various conventionally known inorganic fillers can be used. Examples thereof include silica powder, talc, and alumina powder. Given
These may be used alone or in combination of two or more. Among them, it is preferable to use silica powder, especially fused silica powder, and it is particularly preferable to use spherical fused silica powder. The spherical fused silica powder preferably has an average particle size of 0.2 to 20 μm, particularly preferably 0.2 to 5 μm. Further, it is preferable to use one having a maximum particle size of 75 μm or less. Particularly preferably, the maximum particle size is 5 to 24 μm.
That is, if the maximum particle size exceeds 75 μm, it may not be possible to fill the space between the printed circuit board and the semiconductor element (a void that is resin-sealed using the sealing resin composition). From such a viewpoint, the inorganic filler (c
The maximum particle size of the component is preferably set to be not more than 以下 of the distance between the printed circuit board and the semiconductor element (the gap to be resin-sealed using the sealing resin composition). More preferably, it is 1/10 to 1/3. That is, the maximum particle size is reduced to 1/2.
This is because the setting described below allows the filling of the sealing resin composition in a molten state between the substrate and the semiconductor element to be performed favorably without generating voids or the like.

The content of the inorganic filler (component (c)) is as follows:
It is preferable to set the content within a range of 50% by weight or more and less than 80% by weight of the entire sealing resin composition. Particularly preferably 60
% By weight to 75% by weight. That is, when the content of the inorganic filler (component (c)) is less than 50% by weight, the difference between the properties of the cured resin for sealing, particularly the linear expansion coefficient, becomes large, and cracks and the like are caused on the cured resin and the semiconductor element. Generate defects. On the other hand, if the content is 80% by weight or more, the meltability of the encapsulating resin is increased, so that the filling property is deteriorated.

In the sealing resin composition used in the present invention, in addition to the above components a to c, if necessary, various types of silicone compounds (such as side chain ethylene glycol type dimethylpolysiloxane) can be used to reduce stress. Agents, flame retardants, waxes such as polyethylene wax and carnauba wax, and coupling agents such as various silane coupling agents (such as γ-glycidoxypropyltrimethoxysilane) may be appropriately blended.

Examples of the flame retardant include a brominated epoxy resin, and a flame retardant aid such as diantimony trioxide is used.

The sealing resin composition used in the present invention comprises:
For example, it is obtained as follows. That is, the component a, the component b, and the component c are mixed at 150 ° C. for 30 minutes to 1 hour in a metal container that can be externally heated, and the temperature is reduced to 120 ° C. Add and mix homogeneously. Then, the mixture is uniformly mixed and then formed into a rolled sheet, which is punched into a desired shape and pelletized.

The catalyst blended for the above-mentioned adjustment of the reactivity is not particularly limited, and may be a catalyst conventionally used as a curing accelerator. For example, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-methylimidazole and the like can be mentioned.

The method of mixing the above components and producing pellets is not limited to the above method. For example, in the above mixing, a biaxial roll, a triaxial roll, or the like may be used. As for the method of producing the pellets, a method such as a casting method can be used instead of punching after forming into a sheet.

The shape of the pellet is not particularly limited, and may be appropriately set according to the purpose, the size and shape of the printed circuit board and the semiconductor element, and the like.

Next, a method for manufacturing a semiconductor device according to the present invention will be described with reference to the drawings.

First, as shown in FIGS. 1A and 1B, a plurality of semiconductor elements 5 positioned at predetermined intervals on wiring electrodes 3 on a wiring circuit board 2 having a wiring circuit formed on one side. The plurality of semiconductor elements 5 are mounted on the printed circuit board 2 by bringing the metal electrodes (bumps) 7 formed on the lower surface into contact with each other and joining the plurality of semiconductor elements 5 to the printed circuit board 2. In FIG. 1A, sixteen semiconductor elements 5 are provided on the printed circuit board 2; however, the number is not limited to this, and two or more elements are appropriately set.

As a material for forming the electrodes (bumps) 7 formed on the lower surface of the semiconductor element 5, low melting point solder, high melting point solder, gold stud bumps, gold, silver, copper, aluminum, nickel, chromium, tin And the like. The material for forming the wiring electrodes 3 formed on the wiring circuit board 2 may be the same as the material for forming the electrodes (bumps) 7.

Next, as shown in FIGS. 2A and 2B, two dashed lines Q
The pellets 8 made of the above-mentioned sealing resin composition are respectively mounted on the printed circuit board 2 which is the central part of the four semiconductor elements 5 disposed in the four regions divided by the above. Then, after the pellets 8 are placed, the whole is heated to melt the pellets 8, and the molten state is sealed in the respective voids formed by each semiconductor element 5 and the printed circuit board 2 by utilizing the capillary phenomenon. Resin sealing is performed by filling a resin composition for stopping, and more preferably, by filling and curing the gap between the semiconductor elements 5 together with the space. Thus, a semiconductor device as shown in FIG. 3 is manufactured. In FIG. 3, reference numeral 6 denotes a sealing resin layer formed by sealing using a sealing resin composition.

After the gaps between the semiconductor elements 5 and the printed circuit board 2 and the gaps between the semiconductor elements 5 are sealed with a resin, as shown in FIG. Thus, a semiconductor device is manufactured. The cutting method is not particularly limited, and examples thereof include a blade dicing method, a diamond scriber method, and a laser scriber method.

In the above method, the encapsulating resin composition is
As shown in FIGS. 2A and 2B, a columnar pellet 8 having a size that can be accommodated and placed in a space that is a central portion of four semiconductor elements 5 is used. Is not limited to a columnar shape, and may have a conical shape, as long as the shape and size can be accommodated and placed in a space that is a central portion of the four semiconductor elements 5. It doesn't matter.

Further, as shown in FIG. 5, among the cross-shaped spaces formed by the four semiconductor elements 5 respectively disposed in the four regions divided by the two-dot chain line Q '. Alternatively, a rod-shaped pellet 8b large enough to be accommodated in one of the linear spaces may be used. This rod-shaped pellet 8b
The shape of is not particularly limited, and rod-shaped pellets having various cross-sectional shapes such as a circular cross-section (including an elliptical shape), a polygonal shape such as a triangular or quadrangular shape can be appropriately used.

The pellets as the sealing resin composition have such an amount that at least individual voids formed by the wiring circuit board 2 and the plurality of semiconductor elements 5 can be filled. Alternatively, the amount may be such that the resin composition can fill gaps between the plurality of semiconductor elements 5 and cover the surface of each semiconductor element 5.

In the above manufacturing method, the printed circuit board 2 is
After being sealed with resin, each semiconductor element 5 is cut into an appropriate size for each unit. However, the present invention is not limited to this one, and a wiring circuit board on which individual semiconductor elements 5 can be mounted in advance. May be used.

In the method of manufacturing the semiconductor device, a frame for preventing the molten sealing resin composition from flowing out may be provided on the outer peripheral edge of the printed circuit board 2 in advance. That is, after the frame is provided, the individual gaps formed by the printed circuit board 2 and the semiconductor element 5 and the gaps between the plurality of semiconductor elements 5 are filled with the sealing resin composition in a molten state. The molten resin can be prevented from flowing out of the outer peripheral edge of the printed circuit board 2, and the gap between the semiconductor elements 5 can be uniformly filled. The frame is removed from the printed circuit board 2 after the filling of the voids and gaps with the sealing resin composition in a molten state.

The heating temperature at which the pellets 8 made of the encapsulating resin composition which are solid at ordinary temperature are melted is as follows.
The temperature is preferably set in the range of 70 to 250 ° C. in consideration of the deterioration of the semiconductor element 5 and the printed circuit board 2 and the like. Further, the heating temperature conditions for curing after filling are as follows.
It is preferable to set the temperature in the range of 20 to 200 ° C. Examples of the heating method include an infrared reflow oven, a dryer, a hot air blower, and a hot plate.

In the semiconductor device manufactured as described above, the size of each semiconductor element 5 is usually 5 to 20 in width.
Those having a size of mm × length 5 to 20 mm × thickness 0.1 to 1.0 mm are used. The distance between each semiconductor element 5 and the gap between the wiring circuit board 2 and the gap where the molten sealing resin composition is filled is usually 10 to 120 μm. In particular, in consideration of the characteristics of the sealing resin composition used in the present invention, the distance between the two is preferably set to 10 to 100 μm.

The sealing resin composition (pellet 8) used in the above-mentioned production method preferably has a pellet density of 98% or more [property (Y)] with respect to the true density, particularly preferably 99%. That is all. That is, by setting the pellet density to a high true density of 98% or more with respect to the true density, it is possible to prevent the air inside the pellets from being brought into the cured product and to prevent the air from forming voids. It is possible. The pellet density (%) is a value calculated by the following equation.

[0043]

## EQU1 ## Pellet density (%) = [(specific gravity of pellet) /
(Specific gravity of cured product)] × 100

The encapsulating resin composition (pellet 8) usually has a gel time at 150 ° C. [property (X)] of 5 to 30 minutes, particularly a gel time at 150 ° C. of 5 to 15 minutes. Minutes. That is, when the gel time of the sealing resin composition is within the above range, the curing reaction occurs slowly and the gap between the wiring circuit board and the semiconductor element is uniformly filled with the sealing resin composition, and the sealing is performed. Work conditions can be easily set and the curing time can be shortened. The gel time was measured by a hot plate cavity method.

Further, it is necessary that the sealing resin composition has the following property (Z). That is, a prism-shaped pellet having a cross-sectional area of 1 mm × 2 mm is prepared by using the material for forming the sealing resin composition according to the above method. Then, the prismatic pellets are heated and melted at 150 ° C. for 10 minutes, and are melted and penetrated between two mirror-surface glass plates having a gap of 100 μm, and the penetration distance at that time becomes 15 mm or more [Characteristic (Z)] Must have. More preferably, the penetration distance is 18 mm or more. The sealing resin layer 6 formed by sealing with the sealing resin composition, that is, the sealing resin composition includes:
The melt viscosity at each use temperature is preferably 1 to 100 poise, and the cured product thereof preferably has a linear expansion coefficient of 14 to 40 ppm / ° C. Particularly preferably, the melt viscosity is 1 to 3.
0 poise, and the coefficient of linear expansion is 14 to 30 ppm / ° C. This is because matching the linear expansion coefficient of the interfacial sealing resin with the linear expansion coefficient of the conductive adhesive material such as solder, which is an interface joint, eliminates stress concentration and improves conduction reliability. That is, the filling property is improved by setting the melt viscosity within the above range. Further, by setting the linear expansion coefficient within the above range,
Defects due to stresses such as cracks in the cured resin or semiconductor element can be prevented. In addition, the said melt viscosity was measured with the cone plate viscometer. The coefficient of linear expansion was measured by thermomechanical analysis (Thermal Mechanical Analysis: TMA).

Next, examples will be described together with comparative examples.

First, prior to the examples, the following components were prepared.

[Epoxy resin a] Crystalline epoxy resin [Epoxy resin represented by the above formula (1) (YX-4000H, manufactured by Yuka Shell Co., Ltd.)] (epoxy equivalent 192, melting point 110 ° C.)

[Epoxy resin b] Crystalline epoxy resin [Epoxy resin represented by the formula (2) (YDC1312, manufactured by Toto Kasei Co., Ltd.)] (epoxy equivalent: 175, melting point: 1)
40 ℃)

[Epoxy resin c] Crystalline epoxy resin [Epoxy resin represented by the formula (3) (ESLV-80XY, manufactured by Nippon Steel Chemical Co., Ltd.)] (epoxy equivalent: 195, melting point: 80 ° C.)

[Curing agent a] Novolak type phenol resin (hydroxyl equivalent: 104 g / eq, softening point: 59 ° C.)

[Curing agent b] Phenol aralkyl resin (hydroxyl equivalent 170 g / eq, softening point 65 ° C.)

[Silica powder] Spherical fused silica powder (average particle size 5 μm, maximum particle size 24 μm)

[Catalyst] Triphenylphosphine

[Flame retardant] Brominated epoxy phenol novolak

[Flame retardant aid] diantimony trioxide

[Wax] Polyethylene wax

[Silicone compound] Side chain ethylene glycol type dimethyl polysiloxane

[Coupling agent] γ-glycidoxypropyltrimethoxysilane

[0060]

Examples 1 to 8 [Preparation of sealing pellets] Each of the above-mentioned components was mixed at the ratios shown in Table 1 below. This was directly formed into a sheet, and punched after cooling to produce a cylindrical pellet (height: 10 mm × cross-sectional area: 54 mm ² ). The density of each of the obtained pellets was 98% or more of the true density.

[0061]

[Table 1]

Using each of the above pellets, a semiconductor device was manufactured as follows. That is, first, as shown in FIGS. 1A and 1B, a wiring electrode 3 made of low melting point solder is placed on a wiring circuit board 2 having a wiring circuit formed on one surface.
Electrodes (bumps) 7 made of high melting point solder formed on the lower surfaces of the sixteen semiconductor elements 5 positioned at regular intervals (4 mm) were brought into contact with each other, and the plurality of semiconductor elements 5 and the printed circuit board 2 were joined.

Next, as shown in FIGS. 2A and 2B, two dashed lines Q
A total of four pellets 8 made of the above-mentioned sealing resin composition are placed on the printed circuit board 2 which is the central part of the four semiconductor elements 5 respectively disposed in the four regions divided by the above. did. And, after placing the above-mentioned pellets 8,
The whole was heated by a dryer (condition: 150 ° C.) to melt the pellets 8, and individual voids formed by each semiconductor element 5 and the printed circuit board 2 were filled with the sealing resin composition in a molten state. . Subsequently, the entire gap was resin-sealed by heating the entire body (condition: curing at 150 ° C. × 5 hours) to cure the sealing resin composition. In this way,
A semiconductor device as shown in FIG. 3 was manufactured. In FIG. 3, reference numeral 6 denotes a sealing resin layer formed by sealing using a sealing resin composition.

Next, after the individual gaps formed between the semiconductor elements 5 and the wiring circuit board 2 and the gaps between the semiconductor elements 5 are sealed with a resin, as shown in FIG. Each unit was cut by dicing. Thus, the intended semiconductor device was manufactured.

In the semiconductor device thus obtained, no voids were formed in the sealing resin layer 6 and the result of the current test was good, so that a highly reliable device was obtained. You can see that. The energization test was performed as follows. That is, the initial conduction failure evaluation and the evaluation at −55 ° C./5 min.
Conduction failure evaluation after a thermal cycle test (TCT) at 1000 cycles of 125 ° C./5 minutes was performed. As a result, no conduction failure (out of 10 packages) occurred in any conduction evaluation.

Next, 22 mm × 60 mm × 1 mm thick
Were prepared and bonded by being shifted about 5 mm in the longitudinal direction via a 100 μm spacer. Then, a prism having a cross-sectional area of 1 mm × 3 mm × 20 mm in length is placed on the mirror glass plate where the lamination is displaced, and then left in an oven at a temperature of 150 ° C. for 10 minutes to melt the pellet. Then, the interface between the two mirror glass plates (void 100 μm) was sealed with a resin by filling the sealing resin composition by capillary action. As a result of the sealing, the distance at which the molten resin entered the interface was measured and shown. As a guide, 15
mm is considered to be a value required for general use.

The above-mentioned pellets were heated and melted and cured (conditions: 150 ° C. × 20 minutes + 150 ° C. × 300 minutes), and the coefficient of linear expansion was measured by thermomechanical analysis (TMA). In addition, the respective melt viscosities and gel times were measured according to the methods described above. The evaluation and measurement results are shown in Table 2 below.

[0068]

[Table 2]

From the results shown in Table 2, it can be seen that the results of the conduction test of each semiconductor device were good, and that a highly reliable semiconductor device was obtained. When the characteristics of each pellet used in manufacturing the semiconductor device were examined, the gel time at 150 ° C. was 5 to 30 minutes, the minimum melt viscosity at melting (150 ° C.) was 1 to 30 poise, and the coefficient of linear expansion was 14. ~ 40p
pm / ° C.

[0070]

As described above, the present invention mounts the plurality of semiconductor elements on the substrate by bringing the electrode portions of the plurality of semiconductor elements positioned at predetermined intervals into contact with the wiring electrodes of the printed circuit board. The prepared wiring circuit board on which the semiconductor element is mounted is prepared. Then, by placing a sealing resin composition that is solid at normal temperature between any of the plurality of semiconductor elements and melting by heating, the wiring circuit board and the plurality of semiconductor elements are bonded together. A method is provided in which the gap is filled with the molten sealing resin composition and cured, and at least individual gaps formed by the printed circuit board and the plurality of semiconductor elements are each resin-sealed. A semiconductor device can be manufactured by cutting a semiconductor element mounted on a substrate into a plurality of semiconductor elements in this manner. Therefore, resin sealing of many semiconductor elements can be performed at once. Therefore, the production efficiency of the semiconductor device is improved.

In the method for manufacturing a semiconductor device according to the present invention, the sealing resin composition in the molten state fills the individual voids formed by the wiring circuit board and the plurality of semiconductor elements, and forms the plurality of semiconductor elements. Filling the gaps between the semiconductor elements also facilitates resin sealing of the individual gaps formed by the printed circuit board and the plurality of semiconductor elements and the gaps between the plurality of semiconductor elements.

In the method of manufacturing a semiconductor device according to the present invention,
The solid-state sealing resin composition at room temperature, the individual gaps formed by the wiring circuit board and a plurality of semiconductor elements, when the amount can fill the gap between the plurality of semiconductor elements, the gap and The resin sealing of the gap is easily and reliably performed.

In the method of manufacturing a semiconductor device according to the present invention, a frame for preventing the outflow of the molten sealing resin composition is provided in advance on the outer peripheral edge of the printed circuit board, and a gap between the printed circuit board and the semiconductor element is provided. After filling the sealing resin composition in the molten state, the step of removing the frame from the wiring circuit board, the sealing resin composition in the molten state, the wiring circuit board and a plurality of semiconductor elements It is possible to uniformly fill the formed voids and the gaps between the plurality of semiconductor elements.

Since the encapsulating resin composition which is solid at room temperature has a characteristic (X) of a gel time at 150 ° C. of 5 to 30 minutes, a curing reaction occurs slowly, and the resin composition for the wiring circuit board is formed. The gap between the semiconductor elements is uniformly filled with the sealing resin composition. Further, it is possible to easily set the conditions for the sealing operation.

[Brief description of the drawings]

FIG. 1A is a perspective view showing an example of a method for manufacturing a semiconductor device of the present invention, and FIG. 1B is a partial sectional view thereof.

FIG. 2A is a perspective view showing an example of a method for manufacturing a semiconductor device of the present invention, and FIG. 2B is a plan view thereof.

FIG. 3 is a partial cross-sectional view illustrating an example of a method for manufacturing a semiconductor device of the present invention.

FIG. 4 is a partial cross-sectional view showing one example of a method for manufacturing a semiconductor device of the present invention.

FIG. 5 is a plan view showing an example using pellets of another shape used in the method of manufacturing a semiconductor device of the present invention.

[Explanation of symbols]

 2 wiring circuit board 3 wiring electrode 5 semiconductor element 6 sealing resin layer 7 electrode 8 pellet

Claims (3)

[Claims] 1. A printed circuit board with a semiconductor element mounted thereon, wherein the plurality of semiconductor elements are mounted on the substrate by contacting electrode portions of a plurality of semiconductor elements positioned at predetermined intervals with wiring electrodes of the printed circuit board. Prepare, by placing a solid sealing resin composition at room temperature between any of the plurality of semiconductor elements and heating and melting, the wiring circuit board and the plurality of semiconductor elements Semiconductor, characterized in that the gap is filled with the molten sealing resin composition and cured, and at least individual gaps formed by the printed circuit board and the plurality of semiconductor elements are each resin-sealed. Equipment manufacturing method. 2. A molten resin sealing frame for preventing leakage of a molten sealing resin composition is provided in advance on an outer peripheral edge of the printed circuit board, and a molten sealing resin is formed in a gap between the printed circuit board and the semiconductor element. 2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of removing the frame from the printed circuit board after filling the resin composition. 3. The sealing resin composition which is solid at room temperature,
3. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device has the following characteristic (X). (X) The gel time at 150 ° C. is 5 to 30 minutes.