JP2001044577A - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JP2001044577A JP2001044577A JP21321599A JP21321599A JP2001044577A JP 2001044577 A JP2001044577 A JP 2001044577A JP 21321599 A JP21321599 A JP 21321599A JP 21321599 A JP21321599 A JP 21321599A JP 2001044577 A JP2001044577 A JP 2001044577A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- circuit
- aluminum nitride
- aluminum
- radiator plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 7
- 230000001154 acute effect Effects 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 239000010949 copper Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000011888 foil Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N glycerol group Chemical group OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- 239000004594 Masterbatch (MB) Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- 229920000609 methyl cellulose Polymers 0.000 description 2
- 239000001923 methylcellulose Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical class CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 235000014413 iron hydroxide Nutrition 0.000 description 1
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical class OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Structure Of Printed Boards (AREA)
Abstract
(57)【要約】
【課題】耐ヒートサイクル性と部分放電特性の両方に優
れた回路基板を提供すること。
【解決手段】 窒化アルミニウム基板の一方の面に金属
回路、他方の面に金属放熱板が形成されてなるものであ
って、以下の条件を満たしてなることを特徴とする回路
基板。
(1)窒化アルミニウム基板の厚みが1〜5mmである
こと
(2)金属回路及び金属放熱板の材質が、アルミニウム
又はアルミニウム合金であること
(3)金属回路及び金属放熱板が、金属板と窒化アルミ
ニウム基板との接合体をエッチングして形成されたもの
であること
(4)金属回路と金属放熱板との沿面距離の差が、いか
なる部分においても1mm以下(0を含む)であること
(5)金属回路及び金属放熱板の側面において、頂角が
90度未満の鋭角を有するものであって、しかも高さが
30μmをこえる凸部が全くないこと(57) [Problem] To provide a circuit board excellent in both heat cycle resistance and partial discharge characteristics. A circuit board comprising a metal circuit formed on one surface of a aluminum nitride substrate and a metal radiator plate formed on the other surface, and satisfying the following conditions. (1) The thickness of the aluminum nitride substrate is 1 to 5 mm (2) The material of the metal circuit and the metal heat sink is aluminum or an aluminum alloy (3) The metal circuit and the metal heat sink are nitrided with the metal plate (4) The difference in creepage distance between the metal circuit and the metal radiator plate is 1 mm or less (including 0) in any part (5). ) On the side surfaces of the metal circuit and the metal heat sink, the apex angle has an acute angle of less than 90 degrees, and there is no convex portion having a height exceeding 30 μm.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子部品のパワー
モジュール等に使用される高耐電圧回路基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high withstand voltage circuit board used for a power module or the like of an electronic component.
【0002】[0002]
【従来の技術】近年、窒化アルミニウム基板の一方の面
に銅回路、他方の面に放熱銅板の形成されたパワーモジ
ュール用回路基板が半導体素子の開発にともなって注目
されている。またその用途も、産業用インバーターから
電車、電気自動車等のモーター制御用へと多様化してお
り、高電圧に対する信頼性が要求されている。2. Description of the Related Art In recent years, a circuit board for a power module, in which a copper circuit is formed on one surface of an aluminum nitride substrate and a heat-dissipating copper plate is formed on the other surface, has attracted attention with the development of semiconductor elements. In addition, its use has been diversified from industrial inverters to motor control for electric trains, electric vehicles, and the like, and high voltage reliability is required.
【0003】窒化アルミニウム基板は、高熱伝導性、高
絶縁性であるので、パワーモジユール用回路基板の絶縁
基板として、耐ヒートサイクル性に対する信頼性等、種
々の長所を有するが、今日要求されているような、使用
電圧が高くなったときの部分放電特性に対する信頼性に
ついては、不明であった。[0003] Aluminum nitride substrates have high thermal conductivity and high insulation properties. Therefore, they have various advantages such as reliability against heat cycle resistance as insulating substrates for circuit boards for power modules, but are required today. However, the reliability of the partial discharge characteristics when the operating voltage was high as described above was unknown.
【0004】従来、絶縁不良を評価する方法として、絶
縁抵抗試験、絶縁耐圧試験がある。絶縁抵抗試験は、印
加電圧が0.5〜1.0kV程度であるので、絶縁基板
の欠損やボイドを検出することはできない。また、絶縁
耐圧試験では、10kV以上の高電圧まで印可すること
ができるので、絶縁破壊の有無を検出することはできる
が、小さな放電電流を検出することができず、部分放電
が長時間発生することによる絶縁不良を察知することが
できない。Conventionally, methods for evaluating insulation failure include an insulation resistance test and a withstand voltage test. In the insulation resistance test, since the applied voltage is about 0.5 to 1.0 kV, it is not possible to detect a defect or a void in the insulating substrate. In the withstand voltage test, a voltage as high as 10 kV or more can be applied, so that the presence or absence of dielectric breakdown can be detected, but a small discharge current cannot be detected, and partial discharge occurs for a long time. It is not possible to detect the insulation failure due to this.
【0005】[0005]
【発明が解決しようとする課題】部分放電特性は、使用
する電圧に安全係数をかけた電圧において、放電電荷量
が10pC以下であれば、部分放電が長時間発生しても
絶縁不良には至らないが、例えば電車の駆動モーター制
御用パワーモジュール等の場合には、10pCをこえる
部分放電開始電圧が6kV以上、特に好ましくは9kV
以上であるとされている。しかしながら、窒化アルミニ
ウム基板の一方の面に銅回路、他方の面に放熱銅板が形
成されてなる回路基板において、その耐電圧を実現させ
るための具体的手段を記載した従来技術は見あたらな
い。The partial discharge characteristics are such that if the amount of discharge charge is 10 pC or less at a voltage obtained by multiplying the voltage to be used by a safety factor, insulation failure will not occur even if partial discharge occurs for a long time. However, for example, in the case of a power module for controlling a drive motor of a train, the partial discharge starting voltage exceeding 10 pC is 6 kV or more, particularly preferably 9 kV.
That is all. However, in a circuit board in which a copper circuit is formed on one surface of an aluminum nitride substrate and a heat-dissipating copper plate is formed on the other surface, there is no prior art describing specific means for realizing the withstand voltage.
【0006】本発明は、上記に鑑みてなされたものであ
り、その目的は、優れた耐ヒートサイクル性を保持し、
しかも金属回路と金属放熱板との間における放電電荷が
10pCをこえたときの部分放電開始電圧が6kV以上
である部分放電特性の良好な回路基板を提供することで
ある。The present invention has been made in view of the above, and an object of the present invention is to maintain excellent heat cycle resistance,
In addition, it is an object of the present invention to provide a circuit board having a good partial discharge characteristic in which the partial discharge starting voltage is 6 kV or more when the discharge charge between the metal circuit and the metal radiator plate exceeds 10 pC.
【0007】[0007]
【課題を解決するための手段】すなわち、本発明は、窒
化アルミニウム基板の一方の面に金属回路、他方の面に
金属放熱板が形成されてなるものであって、以下の条件
を満たしてなることを特徴とする回路基板である。 (1)窒化アルミニウム基板の厚みが1〜5mmである
こと (2)金属回路及び金属放熱板の材質が、アルミニウム
又はアルミニウム合金であること (3)金属回路及び金属放熱板が、金属板と窒化アルミ
ニウム基板との接合体をエッチングして形成されたもの
であること (4)金属回路と金属放熱板との沿面距離の差が、いか
なる部分においても1mm以下(0を含む)であること (5)金属回路及び金属放熱板の側面において、頂角が
90度未満の鋭角を有するものであって、しかも高さが
30μmをこえる凸部が全くないことThat is, the present invention provides an aluminum nitride substrate in which a metal circuit is formed on one surface and a metal radiator plate is formed on the other surface, and satisfies the following conditions. It is a circuit board characterized by the above-mentioned. (1) The thickness of the aluminum nitride substrate is 1 to 5 mm. (2) The material of the metal circuit and the metal heat sink is aluminum or an aluminum alloy. (3) The metal circuit and the metal heat sink are nitrided with the metal plate. (4) The difference in creepage distance between the metal circuit and the metal radiator plate is 1 mm or less (including 0) in any part. (5) ) On the side surfaces of the metal circuit and the metal heat sink, the apex angle has an acute angle of less than 90 degrees, and there is no convex portion having a height exceeding 30 μm.
【0008】また、本発明は、窒化アルミニウム基板の
一方の面に金属回路、他方の面に金属放熱板が形成され
てなるものであって、金属回路及び金属放熱板の材質
が、アルミニウム又はアルミニウム合金であり、金属回
路及び金属放熱板が、金属板と窒化アルミニウム基板と
の接合体をエッチングして形成されたものであり、しか
も金属回路と金属放熱板との間における放電電荷が10
pCをこえたときの部分放電開始電圧が6kV以上であ
ることを特徴とする回路基板である。The present invention also provides an aluminum nitride substrate having a metal circuit formed on one surface and a metal radiator plate on the other surface, wherein the metal circuit and the metal radiator plate are made of aluminum or aluminum. An alloy, wherein the metal circuit and the metal radiator plate are formed by etching a joined body of the metal plate and the aluminum nitride substrate, and the discharge charge between the metal circuit and the metal radiator plate is 10%.
A circuit board characterized in that a partial discharge starting voltage when exceeding pC is 6 kV or more.
【0009】[0009]
【発明の実施の形態】以下、更に詳しく本発明について
説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail.
【0010】上記のように、窒化アルミニウム基板の一
方の面に銅回路、他方の面に放熱銅板が形成されてなる
回路基板は、パワーモジユール用回路基板として、耐ヒ
ートサイクル性に対する信頼性等、種々の長所を有す
る。本発明は、このような骨格構造を有する回路基板に
おいて、その回路材質、微細形状等を最適化し、今日要
求されているような部分放電特性を更に付与するもので
ある。As described above, a circuit board in which a copper circuit is formed on one surface of an aluminum nitride substrate and a heat-dissipating copper plate is formed on the other surface is a circuit board for a power module. Has various advantages. The present invention is to optimize the circuit material, fine shape, and the like of a circuit board having such a skeletal structure, and further impart partial discharge characteristics as required today.
【0011】本発明の第1の条件は、窒化アルミニウム
基板の厚みが1〜5mmであるということである。窒化
アルミニウム基板の厚みが1mm以上を必要とする理由
は、絶縁基板である窒化アルミニウムの静電容量を大き
くすることにより、微少なボイドや欠陥による放電電荷
の影響を少なくするためである。窒化アルミニウム基板
の厚みが5mmをこえると、静電容量及び絶縁耐圧が要
求値よりも必要以上となり、また大型化しコストアップ
ともなる。The first condition of the present invention is that the thickness of the aluminum nitride substrate is 1 to 5 mm. The reason why the thickness of the aluminum nitride substrate is required to be 1 mm or more is to reduce the influence of discharge charges due to minute voids or defects by increasing the capacitance of aluminum nitride as an insulating substrate. If the thickness of the aluminum nitride substrate exceeds 5 mm, the capacitance and the dielectric strength will be more than required than required, and the size and cost will increase.
【0012】窒化アルミニウム基板としては、窒化アル
ミニウム粉末とイットリア粉末(焼結助剤)を含む混合
粉末を押し出し成形し、焼成して得られた窒化アルミニ
ウム焼結体を、必要に応じてホーニング等の表面処理を
して製造されたものが好ましく、中でも熱伝導率が10
0W/mK以上であるものが好適である。このような窒
化アルミニウム基板の市販品があるので、それを利用す
ることができるが、以下、その製造方法の一例を概説す
る。As the aluminum nitride substrate, a mixed powder containing an aluminum nitride powder and a yttria powder (sintering aid) is extruded and fired, and an aluminum nitride sintered body obtained by firing is optionally subjected to honing or the like. Those manufactured by surface treatment are preferred. Among them, those having a thermal conductivity of 10
Those having 0 W / mK or more are preferable. Since there is a commercially available product of such an aluminum nitride substrate, it can be used. Hereinafter, an example of a manufacturing method thereof will be outlined.
【0013】イットリア粉末0.5〜5重量%を含む窒
化アルミニウム粉末100重量部に、ステアリン酸、オ
レイン酸の脂肪族カルボン酸、脂肪族カルボン酸塩とそ
のエステル類、高級アルコール類、スルホン酸類等から
選ばれた1種又は2種以上の疎水化処理剤を0.5〜5
重量部程度を配合し、ボールミル、振動ミル、ヘンシェ
ルミキサー等で混合する。均一混合を達成するために、
上記界面活性剤を上記配合量よりも1.5〜3倍程度多
くしたマスターバッチを調合しておき、そのマスターバ
ッチと窒化アルミニウム粉末とを上記割合になるように
混合することが好ましい。100 parts by weight of aluminum nitride powder containing 0.5 to 5% by weight of yttria powder are added to stearic acid, aliphatic carboxylic acid of oleic acid, aliphatic carboxylic acid salts and esters thereof, higher alcohols, sulfonic acids, etc. One or more hydrophobizing agents selected from the group consisting of 0.5 to 5
About parts by weight are blended and mixed with a ball mill, a vibration mill, a Henschel mixer or the like. To achieve uniform mixing,
It is preferable to prepare a masterbatch in which the amount of the surfactant is about 1.5 to 3 times larger than the above amount, and mix the masterbatch and the aluminum nitride powder in the above ratio.
【0014】次に、上記疎水化処理された窒化アルミニ
ウム粉末100重量部に対し、例えばポリビニルアルコ
ール、メチルセルロース、アルギン酸、ポリエチレング
リコール、カルボキシメチルセルロース、エチルセルロ
ース等の水溶性有機高分子化合物4〜14重量部と、ジ
ブチルフタレート、フタル酸ジメチル、フタル酸ジエチ
ル等のフタル酸エステル、グリセリン等の可塑剤1〜8
重量部と、水5〜15重量部とを、ボールミル、振動ミ
ル、高速ミキサー、スクリュー等を用いて混練する。Next, 4 to 14 parts by weight of a water-soluble organic polymer compound such as polyvinyl alcohol, methylcellulose, alginic acid, polyethylene glycol, carboxymethylcellulose, ethylcellulose and the like are added to 100 parts by weight of the aluminum nitride powder subjected to the hydrophobic treatment. Phthalate esters such as dibutyl phthalate, dimethyl phthalate and diethyl phthalate, and plasticizers 1 to 8 such as glycerin
Parts by weight and 5 to 15 parts by weight of water are kneaded using a ball mill, a vibration mill, a high-speed mixer, a screw, or the like.
【0015】混練物は、50〜200Pa程度で真空脱
気後、押し出し成形した後、水溶性有機高分子化合物が
変質しない温度、例えば100℃以下で乾燥されて窒化
アルミニウムグリーンシートが成形される。押出し成形
機としてはスクリュー方式のエクストルーダが一般的に
採用される。The kneaded material is vacuum degassed at about 50 to 200 Pa, extruded, and dried at a temperature at which the water-soluble organic polymer does not deteriorate, for example, at 100 ° C. or less, to form an aluminum nitride green sheet. As an extruder, a screw type extruder is generally employed.
【0016】次いで、窒化アルミニウムグリーンシート
は、空気中で500〜600℃に1〜10時間、加熱脱
脂され、その後、焼成されて窒化アルミニウム焼結体が
製造される。焼成条件は、窒素、アルゴン等の非酸化性
雰囲気下、温度1700〜2000℃、0.5〜5時間
である。Next, the aluminum nitride green sheet is heated and degreased in air at 500 to 600 ° C. for 1 to 10 hours, and then fired to produce an aluminum nitride sintered body. The firing conditions are a temperature of 1700 to 2000 ° C. for 0.5 to 5 hours in a non-oxidizing atmosphere such as nitrogen or argon.
【0017】得られた窒化アルミニウム焼結体は、必要
に応じ、その表面をアルミナ研磨剤を用いたホーニング
装置で清浄化されて、窒化アルミニウム基板となる。The obtained aluminum nitride sintered body is cleaned, if necessary, with a honing device using an alumina abrasive to form an aluminum nitride substrate.
【0018】本発明の第2の条件は、金属回路と金属放
熱板の材質が、アルミニウム又はアルミニウム合金であ
るということである。アルミニウム又はアルミニウム合
金は、銅又は銅合金に比べて、降伏耐力が小さく、塑性
変形しやすいので、耐ヒートサイクル性等に優れたもの
となる。Alの純度は、塑性変形を容易とするために、
99.5%以上特に99.9%以上が好ましいが、数十
μm以下の厚みであれば、A2017等のアルミニウム
合金も使用することができる。金属回路及び金属放熱板
の厚みは、いずれも0.2〜0.6mm、特に0.3〜
0.5mmであることが好ましい。中でも、金属回路の
厚みは、金属放熱板のそれと同等以下であることが好ま
しい。A second condition of the present invention is that the material of the metal circuit and the metal radiator plate is aluminum or an aluminum alloy. Aluminum or an aluminum alloy has a lower yield strength and is more likely to be plastically deformed than copper or a copper alloy, and therefore has excellent heat cycle resistance and the like. The purity of Al is set to facilitate plastic deformation.
Although it is preferably 99.5% or more, particularly 99.9% or more, an aluminum alloy such as A2017 can be used as long as the thickness is several tens μm or less. The thickness of the metal circuit and the metal heat sink is 0.2 to 0.6 mm, especially 0.3 to 0.6 mm.
It is preferably 0.5 mm. In particular, the thickness of the metal circuit is preferably equal to or less than that of the metal heat sink.
【0019】第3の条件は、金属回路と金属放熱板は、
窒化アルミニウム基板の表裏面にアルミニウム板又はア
ルミニウム合金板が接合されてなる接合体の金属部分を
エッチングして形成されているとうことである。これに
よって、側面(エッチング面)の凹凸を激減でき、高電
圧印加時の電荷集中をなくすことができる。The third condition is that the metal circuit and the metal radiator are
That is, the metal part of the joined body in which the aluminum plate or the aluminum alloy plate is joined to the front and back surfaces of the aluminum nitride substrate is formed by etching. As a result, irregularities on the side surface (etched surface) can be drastically reduced, and charge concentration when a high voltage is applied can be eliminated.
【0020】接合体は、金属板と窒化アルミニウム基板
との間に、Al−Si系合金箔、Al−Cu系合金箔、
Al−Cu−Mg系合金箔を介在させ、それをカーボン
製の治具にセットし、窒化アルミニウム基板の垂直方向
から15〜60kgf/cm 2の圧力を加えながら、温
度590〜640℃で、3〜60分保持することによっ
て製造することができる。このような合金箔を用いるこ
とによって、ろう接欠陥(接合された金属板に生成する
虫食い現象)が著しく減少し、一段と部分放電特性に優
れたものとなる。The joined body is a metal plate and an aluminum nitride substrate
Between, Al-Si alloy foil, Al-Cu alloy foil,
Al-Cu-Mg alloy foil is interposed and carbon
In a vertical direction of the aluminum nitride substrate
From 15 to 60kgf / cm TwoWhile applying pressure
At 590-640 ° C for 3-60 minutes.
Can be manufactured. Use of such alloy foil
And by soldering defects (created on the joined metal plate
Worming phenomenon) is significantly reduced, and the partial discharge characteristics are more excellent.
It will be.
【0021】金属回路と金属放熱板の形成は、接合体表
裏の金属板上面に所望パターンのエッチングレジストを
印刷し、塩酸濃度0.1〜0.5%の塩化第二鉄溶液を
用いて金属板を溶解した後エッチングレジストを溶解
し、必要に応じ、Niメッキを施すことによって行うこ
とができる。The formation of the metal circuit and the metal radiator plate is performed by printing an etching resist having a desired pattern on the upper surface of the metal plate on the front and back of the joined body, and using a ferric chloride solution having a hydrochloric acid concentration of 0.1 to 0.5%. After dissolving the plate, the etching resist can be dissolved, and if necessary, Ni plating can be performed.
【0022】第4の条件は、接合体のエッチングによっ
て、金属回路と金属放熱板を形成させる際、その金属回
路と金属放熱板との沿面距離の差を、いかなる部分にお
いても1mm以下(0を含む)となるようにすることで
ある。本発明における沿面距離とは、窒化アルミニウム
基板の端部と、最も外側にある金属回路又は金属放熱板
の端部との距離をいう。The fourth condition is that when a metal circuit and a metal radiator plate are formed by etching the joined body, the difference in the creepage distance between the metal circuit and the metal radiator plate should be 1 mm or less (0 to 0 mm) in any part. Including). The creepage distance in the present invention refers to the distance between the end of the aluminum nitride substrate and the end of the outermost metal circuit or metal heat sink.
【0023】本発明においては、金属回路と金属放熱板
の形成位置・寸法・形状等は、全く自由であるが、上記
沿面距離の差をいかなる部分においても1mm以下(0
を含む)とすることが大変重要なことである。金属回路
と金属放熱板の沿面距離の差が1mmをこえると、金属
回路部に電荷が集中し、10pCをこえる部分放電開始
電圧が低くなる。最も好ましい沿面距離の差はゼロであ
る。In the present invention, the formation position, size, shape, etc. of the metal circuit and the metal radiator plate are completely free, but the difference in the creepage distance is 1 mm or less (0 mm) in any part.
Is very important. When the difference in the creepage distance between the metal circuit and the metal radiator plate exceeds 1 mm, charges concentrate on the metal circuit portion, and the partial discharge starting voltage exceeding 10 pC decreases. The most preferred creepage difference is zero.
【0024】沿面距離の差は、測長可能なスケールがつ
いた市販の光学顕微鏡を用いて測定することができる。The difference in creepage distance can be measured using a commercially available optical microscope equipped with a scale capable of measuring the length.
【0025】本発明の第5条件は、金属回路と金属放熱
板の側面(エッチング面)の平滑性に関する規制であ
り、エッチング状態の良否を表すものである。この要件
は、第4の条件と同様に極めて重要である。The fifth condition of the present invention is a regulation on the smoothness of the side surfaces (etched surfaces) of the metal circuit and the metal radiator plate, and expresses the quality of the etched state. This requirement is as important as the fourth condition.
【0026】部分放電開始電圧は、窒化アルミニウム基
板に形成された金属回路及び金属放熱板の側面の平滑性
に大きく左右されることを本発明者は先に見いだしてい
る。そこで、更に検討を進めたところ、側面から突出し
た、高さの高いしかも頂角が鋭角な凸部ほど部分放電開
始電圧を低めていることがわかり、放電電荷が10pC
をこえる部分放電開始電圧が6kV以上を達成する条件
について更に追求した結果、頂角が90度未満の鋭角を
有するものであって、しかも高さが30μmをこえる凸
部は絶対にあってはならないことを見いだしたものであ
る。The present inventor has previously found that the partial discharge starting voltage largely depends on the smoothness of the side surfaces of the metal circuit and the metal radiator formed on the aluminum nitride substrate. Therefore, further investigations revealed that the higher the height of the projection, the sharper the apex angle, the lower the partial discharge inception voltage, and the discharge charge was 10 pC.
As a result of further pursuing the conditions for achieving a partial discharge inception voltage of 6 kV or more, a convex portion having an apex angle of less than 90 degrees and a height of more than 30 μm must never be present. That's what I found.
【0027】金属回路と金属放熱板の側面(エッチング
面)には、通常、凸部の他に、凹部、又は凹部と凸部が
連続した凹凸が形成されているが、本発明で規制しなけ
ればならないのは側面からの突き出した高さが30μm
をこえ、しかも90度未満の鋭角を有する凸部である。
従って、本発明においては、90度未満の鋭角を有する
凸部であっても、その高さが30μm以下の凸部の存在
は許される。また、連続した凹凸の場合は、凹部の深さ
と凸部の高さの合計を凸部の高さとし、それが30μm
以下であれば許される。なお、凹部の場合には、その深
さが30μmをこえていてもよいし、底面からの側壁の
立ち上がり角度等の底面形状についても制約はない。凹
部の形状は、部分放電開始電圧を低める要因とはならな
い。Usually, in addition to the convex portions, concave portions or concave and convex portions in which the concave portions and the convex portions are continuous are formed on the side surfaces (etched surfaces) of the metal circuit and the metal radiating plate. Must have a protruding height of 30 μm from the side
And a projection having an acute angle of less than 90 degrees.
Therefore, in the present invention, the presence of a projection having an acute angle of less than 90 degrees and a height of 30 μm or less is allowed. In the case of continuous irregularities, the sum of the depth of the concave portion and the height of the convex portion is defined as the height of the convex portion, which is 30 μm.
The following are allowed. In the case of the concave portion, the depth may exceed 30 μm, and there is no limitation on the bottom shape such as the rising angle of the side wall from the bottom. The shape of the recess does not cause a reduction in the partial discharge starting voltage.
【0028】側面の平滑性が第5の条件を満たしている
金属回路と金属放熱板をエッチングによって形成させる
には、ろう接欠陥のない接合体を製造することが前提と
なる。ろう接欠陥のある接合体をエッチングすると、そ
の部分にエッチング液が入り込み、部分放電開始電圧を
大きくするのによくない平面が形成される。ろう接欠陥
のない接合体の製造方法については上記した。In order to form a metal circuit and a metal radiator plate whose side surfaces satisfy the fifth condition by etching, it is necessary to manufacture a joined body having no brazing defects. When a joined body having a brazing defect is etched, an etchant enters the part, and a flat surface that is not good for increasing the partial discharge starting voltage is formed. The method for producing a joined body having no brazing defects has been described above.
【0029】また、第5の条件を満たすには、エッチン
グ条件が重要となる。アルミニウムは、通常のエッチン
グ液に対する溶解速度が非常に速いので、エッチング速
度をコントロールすることが難しい。そこで、本発明で
は、エッチング液として、塩酸濃度の低い塩化第二鉄溶
液を用いる。通常のエッチング液では、スラッジと呼ば
れる水酸化鉄の析出を防止するためと、エッチング速度
を速くするために、塩化第二鉄溶液の塩酸濃度を1%程
度に保たれているが、この条件では、部分放電開始電圧
を大きくするのに悪影響を与える凹凸が生じる。本発明
においては、塩化第二鉄溶液の塩酸濃度は0.1〜0.
5%、特に0.2〜0.3%であることが好ましい。
0.1%未満では、スラッジが発生し、エッチングのノ
ズルが詰まりやすくなり、均一なエッチングができなく
なる。In order to satisfy the fifth condition, etching conditions are important. Aluminum has a very high dissolution rate in a normal etching solution, so that it is difficult to control the etching rate. Therefore, in the present invention, a ferric chloride solution having a low hydrochloric acid concentration is used as an etching solution. In ordinary etching solutions, the concentration of hydrochloric acid in the ferric chloride solution is maintained at about 1% in order to prevent precipitation of iron hydroxide called sludge and to increase the etching rate. As a result, unevenness occurs which has an adverse effect on increasing the partial discharge starting voltage. In the present invention, the concentration of hydrochloric acid in the ferric chloride solution is 0.1 to 0.1.
It is preferably 5%, particularly preferably 0.2 to 0.3%.
If it is less than 0.1%, sludge is generated, and the etching nozzle is easily clogged, so that uniform etching cannot be performed.
【0030】金属回路と金属放熱板の側面(エッチング
面)の平滑性が第5の条件を満たしているか否かは、金
属回路と金属放熱板の側面(エッチング面)をアクリル
系の樹脂で包埋し、研磨した後、走査型電子顕微鏡で2
00倍の倍率で写真を撮り、凸部の高さと頂角を測定す
ることによって行うことができる。Whether the side surfaces (etched surface) of the metal circuit and the metal radiator plate satisfy the fifth condition is determined by wrapping the metal circuit and the side surface (etched surface) of the metal radiator plate with an acrylic resin. After burying and polishing, 2
This can be done by taking a photograph at a magnification of 00 times and measuring the height and the apex angle of the convex portion.
【0031】上記5つの条件で満たされた回路基板は、
金属回路と金属放熱板との間における放電電荷が10p
Cをこえたときの部分放電開始電圧が6kV以上とな
る。条件を更に厳選すればそれを9kV以上にすること
もできる。The circuit board satisfying the above five conditions is:
The discharge charge between the metal circuit and the metal heat sink is 10p
The partial discharge starting voltage when exceeding C becomes 6 kV or more. If the conditions are more carefully selected, it can be increased to 9 kV or more.
【0032】本発明において、部分放電開始電圧の測定
は、JEC−0401に準じ、例えば総研電気社製部分
放電測定器「DAC−6018」を用い、金属回路面と
金属放熱面に電極を取り付けて1kV/分の昇圧速度で
電圧を印可し、1kV毎に放電電荷量を測定し、それが
10pCをこえたときの電圧を読みとることによって、
行うことができる。In the present invention, the partial discharge starting voltage is measured according to JEC-0401, for example, by using a partial discharge meter “DAC-6018” manufactured by Soken Electric Co., Ltd., and attaching electrodes to the metal circuit surface and the metal heat radiation surface. By applying a voltage at a boosting rate of 1 kV / min, measuring the amount of discharge charge every 1 kV, and reading the voltage when it exceeds 10 pC,
It can be carried out.
【0033】[0033]
【実施例】以下、実施例と比較例をあげて更に具体的に
本発明を説明する。The present invention will be described more specifically below with reference to examples and comparative examples.
【0034】実施例1 酸素含有量1.2重量%、平均粒径2.0μmの窒化ア
ルミニウム粉末96重量部とイットリア粉末4重量部を
ボールミルにて30分間混合してからオレイン酸2重量
部を加え更に30分間混合して窒化アルミニウム粉末を
疎水化処理した。この粉末にメチルセルロース8重量部
加えてから高速ミキサーで1分間混合した後、更にグリ
セリン6重量部と水14重量部との混合溶液を攪拌を続
けながら加え2分間混合後更にロールで練って混練物を
製造した。Example 1 96 parts by weight of aluminum nitride powder having an oxygen content of 1.2% by weight and an average particle diameter of 2.0 μm and 4 parts by weight of yttria powder were mixed in a ball mill for 30 minutes, and then 2 parts by weight of oleic acid was added. The mixture was further mixed for 30 minutes to subject the aluminum nitride powder to a hydrophobic treatment. After adding 8 parts by weight of methylcellulose to this powder and mixing for 1 minute with a high-speed mixer, further add a mixed solution of 6 parts by weight of glycerin and 14 parts by weight of water while continuing to stir, mix for 2 minutes and knead with a roll. Was manufactured.
【0035】この混練物をロータリーポンプで130P
a程度に真空脱気を行いながらスクリュー方式のエクス
トルーダを用いて幅120mmのダイスにてシート状に
成形した後、ベルト式の乾燥炉にて80℃×20分乾燥
し、厚み1.2mmの窒化アルミニウムグリーンシート
を成形した。これを55mm×55mmの大きさに金型
で打ち抜き、各シートの表面にBN粉末を塗布して5枚
重ねたものを脱脂炉に入れ、空気中、温度500℃、3
時間処理して脱脂した。The kneaded material is 130 P with a rotary pump.
After forming into a sheet with a die having a width of 120 mm using a screw-type extruder while performing vacuum deaeration to about a, drying at 80 ° C. for 20 minutes in a belt-type drying furnace, and nitriding with a thickness of 1.2 mm An aluminum green sheet was formed. This was punched out with a die to a size of 55 mm × 55 mm, and BN powder was applied to the surface of each sheet, and five sheets were placed in a degreasing furnace and placed in air at a temperature of 500 ° C.
Treated for time and degreased.
【0036】次いで、それを常圧窒素雰囲気中、温度1
900℃で30分間保持して焼成した後、温度1700
℃までの冷却速度を1.5℃/分として室温まで冷却
し、43mm×43mm×1.0mmの窒化アルミニウ
ム焼結体を製造した。焼結体表面をホーニング処理して
2μm除去し、窒化アルミニウム基板とした。これの熱
伝導率は180W/mK、室温3点曲げ強さは40kg
f/mm2であった。Then, it was placed in a nitrogen atmosphere at normal pressure and at a temperature of 1
After firing at 900 ° C. for 30 minutes, the temperature was 1700.
The temperature was cooled to room temperature at a cooling rate of 1.5 ° C./min to a temperature of 43 ° C. to produce a 43 mm × 43 mm × 1.0 mm aluminum nitride sintered body. The surface of the sintered body was removed by a honing treatment to remove 2 μm to obtain an aluminum nitride substrate. Its thermal conductivity is 180W / mK, room temperature 3-point bending strength is 40kg
f / mm 2 .
【0037】窒化アルミニウム基板の表裏両面に、Al
−Cu系合金箔(A2017)を介在させて厚み0.4
mmのAl板(A1085)を配置し、それをカーボン
製治具にセットし、積層体の垂直方向に60kgf/c
m2の圧力で加圧しながら630℃で10分真空中で加
熱し接合体を製造した。On both sides of the aluminum nitride substrate, Al
0.4 thickness with Cu-based alloy foil (A2017) interposed
mm Al plate (A1085), set it on a carbon jig, and apply 60 kgf / c in the vertical direction of the laminate.
It was heated in a vacuum at 630 ° C. for 10 minutes while applying a pressure of m 2 to produce a joined body.
【0038】この接合体に金属回路と金属放熱板の沿面
距離の差が0.8mmとなるようにエッチングレジスト
を塗布し、塩酸濃度0.2%の塩化第二鉄溶液でエッチ
ングした後、Niメッキを施し、回路基板を作製した。An etching resist was applied to the joined body so that the difference between the creepage distances of the metal circuit and the metal radiator plate was 0.8 mm, and was etched with a ferric chloride solution having a hydrochloric acid concentration of 0.2%. Plating was performed to produce a circuit board.
【0039】実施例2〜4 比較例1〜4 接合体を製造する際の付加圧力、窒化アルミニウム基板
の厚み、塩化第二鉄溶液の塩酸濃度、及び金属回路と金
属放熱板の沿面距離の差を表1に示す条件としたこと以
外は、実施例1と同様にして回路基板を作製した。Examples 2 to 4 Comparative Examples 1 to 4 Applied pressure in manufacturing a joined body, thickness of aluminum nitride substrate, concentration of hydrochloric acid in ferric chloride solution, and difference in creepage distance between metal circuit and metal radiator plate Was made in the same manner as in Example 1 except that the conditions shown in Table 1 were used.
【0040】実施例5 実施例1において、Al−Cu系合金箔(A2017)
のかわりに、Al−10%Si−2%Mg合金粉末を用
いて、厚み100μmのAl板を600℃×10分で6
0kgf/cm2の圧力で加圧接合した後、その表裏両
面に更にCuとNiのクラッド板をAlとNiが接触す
るように積層し、真空中630℃×2分で10kgf/
mm2の圧力を付与して加圧接合し、接合体を製造し
た。それを、実施例1と同様にしてエッチングし、回路
基板を作製した。Example 5 In Example 1, an Al-Cu alloy foil (A2017) was used.
Instead, using an Al-10% Si-2% Mg alloy powder, an Al plate having a thickness of 100 μm was formed at 600 ° C. × 10 minutes for 6 minutes.
After pressure bonding at a pressure of 0 kgf / cm 2 , a clad plate of Cu and Ni is further laminated on both the front and back surfaces so that Al and Ni are in contact with each other, and 10 kgf / cm.
A pressure of mm 2 was applied to perform pressure bonding to produce a bonded body. It was etched in the same manner as in Example 1 to produce a circuit board.
【0041】得られた回路基板の部分放電開始電圧を上
記方法に従って測定した。また、部分放電を測定した
後、上記方法に従い、金属回路と金属放熱板の側面(エ
ッチエッチング面)の平滑性を測定した。更に、回路基
板の中央部に、13mmのSiチップを半田付けした
後、ヒートサイクル試験を行った。ヒートサイクル試験
は、−40℃×30分→室温×10分→125℃×30
分→室温×10分を1サイクルとして3000サイクル
実施した。ヒートサイクル試験後、半田クラックやパタ
ーンの剥離等の外観チェックした。これらの結果を表1
に示す。The partial discharge starting voltage of the obtained circuit board was measured according to the above method. After the measurement of the partial discharge, the smoothness of the side surfaces (etch etching surfaces) of the metal circuit and the metal radiator plate was measured according to the above method. Further, after a 13 mm Si chip was soldered to the center of the circuit board, a heat cycle test was performed. The heat cycle test was performed at −40 ° C. × 30 minutes → room temperature × 10 minutes → 125 ° C. × 30
Min → room temperature × 10 minutes as one cycle, and 3000 cycles were performed. After the heat cycle test, the appearance was checked for solder cracks, pattern peeling, and the like. Table 1 shows these results.
Shown in
【0042】[0042]
【表1】 [Table 1]
【0043】[0043]
【発明の効果】本発明によれば、耐ヒートサイクル性と
部分放電特性の両方に優れた回路基板が提供される。According to the present invention, a circuit board excellent in both heat cycle resistance and partial discharge characteristics is provided.
フロントページの続き (72)発明者 辻村 好彦 福岡県大牟田市新開町1 電気化学工業株 式会社大牟田工場内 Fターム(参考) 4E351 AA09 BB01 BB24 BB30 DD10 DD21 DD54 GG04 GG06 5E338 AA01 AA18 BB71 CC01 EE02Continuation of the front page (72) Inventor Yoshihiko Tsujimura 1 Shinkaicho, Omuta-shi, Fukuoka F-term in the Omuta Plant of Electrochemical Industry Co., Ltd. (Reference) 4E351 AA09 BB01 BB24 BB30 DD10 DD21 DD54 GG04 GG06 5E338 AA01 AA18 BB71 CC01 EE02
Claims (2)
回路、他方の面に金属放熱板が形成されてなるものであ
って、以下の条件を満たしてなることを特徴とする回路
基板。 (1)窒化アルミニウム基板の厚みが1〜5mmである
こと (2)金属回路及び金属放熱板の材質が、アルミニウム
又はアルミニウム合金であること (3)金属回路及び金属放熱板が、金属板と窒化アルミ
ニウム基板との接合体をエッチングして形成されたもの
であること (4)金属回路と金属放熱板との沿面距離の差が、いか
なる部分においても1mm以下(0を含む)であること (5)金属回路及び金属放熱板の側面において、頂角が
90度未満の鋭角を有するものであって、しかも高さが
30μmをこえる凸部が全くないこと1. A circuit board comprising a metal circuit formed on one surface of a aluminum nitride substrate and a metal radiator plate formed on the other surface, wherein the following conditions are satisfied. (1) The thickness of the aluminum nitride substrate is 1 to 5 mm. (2) The material of the metal circuit and the metal heat sink is aluminum or an aluminum alloy. (3) The metal circuit and the metal heat sink are nitrided with the metal plate. (4) The difference in creepage distance between the metal circuit and the metal radiator plate is 1 mm or less (including 0) in any part. (5) ) On the side surfaces of the metal circuit and the metal heat sink, the apex angle has an acute angle of less than 90 degrees, and there is no convex portion having a height exceeding 30 μm.
回路、他方の面に金属放熱板が形成されてなるものであ
って、金属回路及び金属放熱板の材質が、アルミニウム
又はアルミニウム合金であり、金属回路及び金属放熱板
が、金属板と窒化アルミニウム基板との接合体をエッチ
ングして形成されたものであり、しかも金属回路と金属
放熱板との間における放電電荷が10pCをこえたとき
の部分放電開始電圧が6kV以上であることを特徴とす
る回路基板。2. A metal circuit formed on one surface of an aluminum nitride substrate and a metal radiator plate formed on the other surface, wherein the metal circuit and the metal radiator plate are made of aluminum or an aluminum alloy. The metal circuit and the metal radiator plate are formed by etching a joined body of the metal plate and the aluminum nitride substrate, and the portion where the discharge charge between the metal circuit and the metal radiator plate exceeds 10 pC A circuit board having a discharge starting voltage of 6 kV or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21321599A JP2001044577A (en) | 1999-07-28 | 1999-07-28 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21321599A JP2001044577A (en) | 1999-07-28 | 1999-07-28 | Circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001044577A true JP2001044577A (en) | 2001-02-16 |
Family
ID=16635449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21321599A Pending JP2001044577A (en) | 1999-07-28 | 1999-07-28 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001044577A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006103277A (en) * | 2004-10-08 | 2006-04-20 | Denki Kagaku Kogyo Kk | Ceramic sheet manufacturing method, ceramic substrate using the same, and use thereof |
| WO2007004579A1 (en) * | 2005-07-04 | 2007-01-11 | Denki Kagaku Kogyo Kabushiki Kaisha | Method for producing ceramic sheet, ceramic substrate using ceramic sheet obtained by such method, and use thereof |
| JP2011091417A (en) * | 2004-04-05 | 2011-05-06 | Mitsubishi Materials Corp | Al/aln joint material, base plate for power module, power module, and method of producing al/aln joint material |
-
1999
- 1999-07-28 JP JP21321599A patent/JP2001044577A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011091417A (en) * | 2004-04-05 | 2011-05-06 | Mitsubishi Materials Corp | Al/aln joint material, base plate for power module, power module, and method of producing al/aln joint material |
| JP2006103277A (en) * | 2004-10-08 | 2006-04-20 | Denki Kagaku Kogyo Kk | Ceramic sheet manufacturing method, ceramic substrate using the same, and use thereof |
| WO2007004579A1 (en) * | 2005-07-04 | 2007-01-11 | Denki Kagaku Kogyo Kabushiki Kaisha | Method for producing ceramic sheet, ceramic substrate using ceramic sheet obtained by such method, and use thereof |
| US8268437B2 (en) | 2005-07-04 | 2012-09-18 | Denki Kagaku Kogyo Kabushiki Kaisha | Method for producing ceramic sheet, ceramic substrate using ceramic sheet obtained by such method, and use thereof |
| JP5042829B2 (en) * | 2005-07-04 | 2012-10-03 | 電気化学工業株式会社 | Manufacturing method of ceramic sheet |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7080881B2 (en) | Ceramic circuit board and modules using it | |
| JP5042829B2 (en) | Manufacturing method of ceramic sheet | |
| WO2019022133A1 (en) | Ceramic circuit board and production method therefor | |
| KR20200004799A (en) | Ceramic circuit board, its manufacturing method and module using the same | |
| CN104885214A (en) | Substrate for power module, substrate for power module with metal parts, power module with metal parts, method for manufacturing power module substrate, and method for manufacturing power module substrate with metal parts | |
| WO2013054852A1 (en) | Silicon nitride substrate and method for manufacturing silicon nitride substrate | |
| JP7301740B2 (en) | Ceramic circuit board and its manufacturing method | |
| JP7212700B2 (en) | CERAMIC-COPPER COMPOSITE, CERAMIC CIRCUIT BOARD, POWER MODULE, AND CERAMIC-COPPER COMPOSITE MANUFACTURING METHOD | |
| JP2011091184A (en) | Semiconductor-mounting circuit board and method of manufacturing the same | |
| US12065385B2 (en) | Ceramic-copper composite, method of producing ceramic-copper composite, ceramic circuit board, and power module | |
| WO2021200866A1 (en) | Circuit board, joined body, and methods for producing same | |
| JP2001044577A (en) | Circuit board | |
| KR20240168928A (en) | Method for manufacturing a joint and method for joining a joint | |
| JP3182354B2 (en) | Circuit board and its evaluation method | |
| JP2005209981A (en) | Cooling block, heater unit and device equipped with the same | |
| JP3419620B2 (en) | Method for manufacturing ceramic circuit board having metal circuit | |
| JP2000269615A (en) | Circuit board | |
| JP3190282B2 (en) | Circuit board manufacturing method | |
| JP4326706B2 (en) | Circuit board evaluation method, circuit board and manufacturing method thereof | |
| JP3342797B2 (en) | Method for manufacturing ceramic circuit board having metal circuit | |
| JP7708622B2 (en) | Ceramic Composite Substrate | |
| WO2023190451A1 (en) | Method for manufacturing joined body | |
| JP3255331B2 (en) | Circuit board | |
| JPH07257973A (en) | Aluminum nitride sintered compact, production and use thereof | |
| JPH05246788A (en) | Aluminum nitride substrate and production thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050314 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20050928 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A521 | Written amendment |
Effective date: 20051007 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060418 |
|
| A521 | Written amendment |
Effective date: 20060427 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20060605 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20060616 |