JP2001144157A - Semiconductor manufacturing method and semiconductor manufacturing apparatus - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To reduce the waiting time in the exchange of an object to be processed between each processing chamber and the preliminary transfer chamber, to efficiently exchange the object to be processed, and to improve the throughput. SOLUTION: During processing in a first processing chamber 1a, second processing is performed.
When there is no object in the transfer preliminary chamber 2 at the time when the processing in the processing chamber 1b is completed, the processing time in the first processing chamber 1a minus the elapsed time of the processing is subtracted from the remaining time. A control unit 5 is provided for determining whether or not the workpiece can be exchanged between the second processing chamber 1b and the transfer preparatory chamber 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor manufacturing method and a semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art In recent years, a semiconductor manufacturing apparatus having a plurality of processing chambers has been used in a semiconductor manufacturing process. For example, as shown in FIG.
Second processing chambers 1a and 1b and a standby stage 3 are provided. Hereinafter, the case where the etching process is performed in the first processing chamber 1a and the ashing process is performed in the second processing chamber 1b will be described as an example.

The first processing chamber 1a and the second processing chamber 1b are
The wafers are always kept in a vacuum state so that the wafers are processed in a vacuum state, and the inside of the transfer preliminary chamber 2 is switched between a vacuum state and an atmospheric pressure state by a vacuum pump and a supply means for supplying nitrogen or the like (not shown). Can be Also,
The standby stage 3 is a standby place for loading and unloading wafers into and from the transfer auxiliary chamber 2, and is always in an atmospheric pressure state.

A gate 4a, which can be opened and closed, is provided in the preliminary transfer chamber 2.
By opening the gates 4a to 4c, communication between the first and second processing chambers 1a and 1b and the standby stage 3 can be established. Is carried out. More specifically, in FIG. 4A, the pre-transfer chamber 2 is purged with nitrogen or the like to bring it into an atmospheric pressure state, the gate 4c is opened, and the first wafer 7a is opened.
From the standby stage 3 to the preliminary transfer chamber 2.

Next, a first processing chamber 1a and a preliminary transfer chamber 2
In order to open the gate 4a between the first processing chamber 1a and the first processing chamber 1a, the first processing chamber 1a and the pre-transfer chamber 2 are evacuated to the same pressure, that is, vacuum, in FIG. When the preliminary transfer chamber 2 is in a vacuum state, the gate 4a is opened,
In FIG. 4C, the wafer 7a is carried into the first processing chamber 1a and subjected to an etching process.

In FIG. 4D, while the etching process is being performed in the first processing chamber 1a, the transfer preliminary chamber 2 is purged with the atmospheric pressure, and the second wafer 7b is moved from the standby stage 3 to the transfer preliminary chamber. Convey to 2. In this state, in FIG. 4E, the preliminary transfer chamber 2 is evacuated. Then, when the preparatory transfer chamber 2 is in a vacuum state and the etching process is completed in the first processing chamber 1a, the first wafer 7a and the second wafer 7b are exchanged in FIG. 4F.

In FIG. 4 (g), the first wafer 7a transferred to the transfer preparatory chamber 2 is transferred to the second processing chamber 1b with the gate 4b opened, and at the same time, in the first processing chamber 1a. The etching processing of the second wafer 7b is performed. FIG.
In (h), the ashing process is performed in the first processing chamber 1a, but depending on the combination of the etching time and the ashing time, as shown in FIG.
The ashing process in the second processing chamber 1b may be completed while the etching process is being performed in a. In such a case, as shown in FIG. 4 (j), the first processing chamber 1a
In the meantime, the first wafer 7a, for which the ashing process has been completed, is transferred from the second processing chamber 1b to the transfer preparatory chamber 2.

[0008] Depending on the etching time, the first processing chamber 1 is transferred from the first processing chamber 1
In FIG. 4 (k), the transfer preliminary chamber 2 is purged with the atmospheric pressure during the time until the etching process is completed in a. When the transfer preparatory chamber 2 reaches the atmospheric pressure,
In FIG. 4 (l), the gate 4c is opened and the first wafer 7a is transferred from the transfer preparatory chamber 2 to the external standby stage 3.

In FIG. 4 (m), an empty transfer spare chamber 2 is shown.
Then, the gate 4a is opened after evacuating to a vacuum state again, and in FIG. 4 (n), the second wafer 7b is taken out from the first processing chamber 1a and transferred to the transfer preparatory chamber 2, and FIG. o)
Then, the second wafer 7b is transferred to the second processing chamber 1b and subjected to an ashing process. By continuously transporting wafers to the first processing chamber 1a and the second processing chamber 1b according to the above procedure, a plurality of wafers are processed and a semiconductor is manufactured.

[0010]

However, in the above-mentioned conventional semiconductor manufacturing method, the etching time in the first processing chamber 1a and the second processing chamber 1b in the steps of FIGS. The first wafer 7 from the second processing chamber 1b to the preliminary transfer chamber 2 depending on the ashing processing time
transfer from the first processing chamber 1a to the transfer preliminary chamber 2
There is a problem that the movement of the second wafer 7b is prevented and the throughput is reduced.

The present invention solves the above-mentioned problems, reduces the waiting time in the exchange of the workpiece between each processing chamber and the auxiliary transfer chamber, efficiently exchanges the workpiece, and improves the throughput. The purpose is to aim.

[0012]

According to a semiconductor manufacturing method of the present invention, an object to be processed is exchanged between a second processing chamber and a preliminary transfer chamber.
The process is performed according to the presence or absence of a substrate in the transfer preliminary chamber and the progress of the processing in the first processing chamber. According to the present invention, it is possible to reduce the waiting time in the process of exchanging an object to be processed and to improve the throughput.

[0013]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein an object to be processed is carried into a first processing chamber via a pre-transfer chamber, subjected to processing, and the processed object is processed. When processing is carried into the second processing chamber via the transfer preliminary chamber and the processing is performed, the exchange of the workpiece between the second processing chamber and the preliminary transfer chamber is performed by the presence or absence of a substrate in the preliminary transfer chamber. Check the
When there is an object to be processed, the substrate to be processed is kept waiting in the second processing chamber as it is, and when there is no object to be processed, the processing is executed according to the progress of the processing in the first processing chamber. .

According to a second aspect of the present invention, there is provided a semiconductor manufacturing method, wherein an object to be processed is carried into a first processing chamber via a transfer auxiliary chamber, subjected to a processing process, and the processed object is transferred to the transfer auxiliary chamber. When carrying in the second processing chamber in a vacuum state through the chamber and performing the processing, when the processing in the second processing chamber is completed during the processing in the first processing chamber, the transfer preliminary When there is no processing object in the chamber, the processing time of the processing object in the second processing chamber and the transfer preliminary chamber is calculated from the remaining time obtained by subtracting the elapsed time of the processing from the processing time in the first processing chamber. It is determined whether or not the replacement can be performed. If the replacement of the workpiece cannot be performed, the workpiece in the second processing chamber is kept on standby and the processing is performed from the first processing chamber to the transfer preliminary chamber. It is characterized in that the exchange of goods is performed first.

According to a third aspect of the present invention, there is provided a semiconductor manufacturing apparatus, wherein an object to be processed is carried into a first processing chamber via a preliminary transfer chamber and subjected to a processing process, and the processed object is transported to the auxiliary transfer chamber. A manufacturing apparatus which carries out a processing by carrying into a second processing chamber in a vacuum state via a chamber, wherein the processing in the second processing chamber is completed during the processing in the first processing chamber. When there is no object to be processed in the transfer preliminary chamber at the point in time, the second processing chamber and the transfer preliminary chamber are separated from the remaining time obtained by subtracting the elapsed time of the processing from the processing time in the first processing chamber. It is characterized in that a control unit for judging whether the exchange of the processing object can be executed is provided.

Hereinafter, a semiconductor manufacturing method in a semiconductor manufacturing apparatus according to the present invention will be described with reference to FIGS. 1 and 2 based on a specific embodiment. 3 and 4 showing the above-mentioned conventional example are denoted by the same reference numerals and described. (Embodiment) Similar to FIG. 3 showing the conventional example, in this (Embodiment), a case where an etching process is performed on a wafer in a first processing chamber 1a and an ashing process is performed in a second processing chamber 1b is performed. Will be described as an example.

The semiconductor manufacturing apparatus shown in FIG. 1 is different from the conventional example in that a control unit 5 is provided in order to shorten the waiting time for wafer exchange and improve the throughput, but the other basic structure is the same as that of the above-mentioned conventional example. This is the same as FIG. 2A to 2H showing the wafer transfer process are the same as FIGS. 4A to 4H showing the conventional example. Specifically, when the processing in the second processing chamber 1b is completed during the processing in the first processing chamber 1a, the wafer exchange between the transfer preliminary chamber 2 and the second processing chamber 1b is performed. A control unit 5 for determining whether or not execution is possible is provided.

The control unit 5 has a timer 6 built therein. Before performing the wafer transfer process shown in FIG. 2, a vacuum evacuation time T1 for the wafer in the transfer preparatory chamber 2, an atmospheric pressure purge time T2, a first The etching time T3 in the processing chamber 1a, the remaining time T4 of the etching processing when the ashing processing in the second processing chamber 1b is completed, and the wafer exchange time between the second processing chamber 1b and the transfer preparatory chamber 2. At T5, a wafer exchange time T6 between the preliminary transfer chamber 2 and the standby stage 3 is measured by the timer 6 and stored.

FIG. 2 shows a wafer transfer process by the semiconductor manufacturing apparatus configured as described above. In FIG. 2A, the preparatory transfer chamber 2 is purged with nitrogen or the like to bring it into an atmospheric pressure state, the gate 4c is opened, and the first wafer 7a is moved to the standby stage 3.
From the transfer preparatory chamber 2. Next, the first processing chamber 1
In order to open the gate 4a between the first processing chamber 1a and the preliminary transfer chamber 2, in FIG. 2B, the first processing chamber 1a and the preliminary transfer chamber 2 are evacuated to the same pressure, that is, vacuum. 1
When the processing chamber 1a and the pre-transfer chamber 2 are in a vacuum state, the gate 4a is opened, and the first wafer 7a in FIG.
Is carried into the first processing chamber 1a and subjected to an etching process.

In FIG. 2D, while the etching process is being performed in the first processing chamber 1a, the transfer preparatory chamber 2 is purged with the atmospheric pressure and the second wafer 7b is transferred from the standby stage 3 to the transfer preparatory stage. It is transported to the chamber 2. Here, the second wafer 7b
Is the last wafer in a cassette (not shown) in which wafers are stored. In this state, the preliminary transfer chamber 2 is evacuated in FIG. Then, when the pre-transfer chamber 2 is in a vacuum state and the etching process is completed in the first processing chamber 1a, the first wafer 7a and the second wafer 7b are exchanged in FIG. 2 (f).

In FIG. 2 (g), the first wafer 7a transferred to the transfer preparatory chamber 2 is transferred to the second processing chamber 1b by opening the gate 4b. An etching process is performed on the second wafer 7b, and in FIG. 2H, an ashing process is performed in the second processing chamber 1b. Normal,
Since the time of the etching process is longer than the time of the ashing process, in FIG. 2 (i), while the etching process of the first processing chamber 1a is being performed, one time in the second processing chamber 1b is performed.
The ashing process for the second wafer 7a ends.

As described above, when the ashing process in the second processing chamber 1b is completed during the etching process in the first processing chamber 1a, the control unit 5 transfers the first wafer 7a for which the ashing process has been completed to a transfer standby state. It is determined according to the following procedure whether or not it can be transferred to the chamber 2. First, the remaining etching time T4 is obtained by subtracting the elapsed time of the etching processing of the second wafer 7b from the etching time T3 in the first processing chamber 1a measured in advance.

Next, the evacuation time T1 of the pre-transfer chamber 2
, The purge time T2, the second processing chamber 1b, and the preliminary transfer chamber 2
T5 required to replace the first wafer 7a between
T7 (T7 = T1 + T7), which is the sum of the exchange time T6 of the first wafer 7a between the transfer preliminary chamber 2 and the standby stage 3.
2 + T5 + T6). And this time T7,
The remaining time T4 obtained by subtracting the elapsed time of the processing from the etching time in the first processing chamber 1a is compared with the remaining time T4. It is determined whether or not the first wafer 7a can be transferred to the transfer preparatory chamber 2 from.

Even if there is no wafer in the transfer preliminary chamber 2, if the remaining etching time T4 is shorter than the total time T7 (T4 ≦ T7), the first wafer 7a is transferred to the second processing chamber 1b. Is determined to be unable to be transferred to the transfer preparatory chamber 2. At that time, the first wafer 7a in FIG.
After the etching process in the processing chamber 1a of FIG.
In (k), the second wafer 7b is transferred to the transfer preliminary chamber 2 first.

In FIG. 2 (l), the second wafer 7b in the preliminary transfer chamber 2 is replaced with the first wafer 7a in the second processing chamber 1b. After replacement of the wafer, in FIG. 2 (m), the transfer preliminary chamber 2 containing the first wafer 7a is purged with air, and during this time, the ashing process of the second wafer 7b is performed in the second processing chamber 1b. .

When the transfer preparatory chamber 2 is brought to the atmospheric pressure state, the first wafer 7a is transferred to the external standby stage 3 in FIG. According to this configuration, the second processing chamber 1b
The transfer of the first wafer 7a from the first processing chamber 1a to the transfer preliminary chamber 2
The movement of b is not hindered, and the throughput can be improved.

If the remaining ashing time T4 is longer than the total time T7 (T4> T7), the first wafer 7a is transferred from the second processing chamber 1b to the transfer standby chamber 2. In the above description, the etching process and the ashing process are described as examples of the processing performed in the first and second processing chambers. However, the present invention is not limited to this, and other processing may be performed. It is applicable even when performing.

[0028]

As described above, according to the semiconductor manufacturing method of the present invention, the exchange of the object to be processed between the second processing chamber and the auxiliary transfer chamber is performed by confirming the presence or absence of the substrate in the auxiliary transfer chamber. When there is a processing object, the substrate to be processed is kept waiting in the second processing chamber as it is, and when there is no processing object, the processing is executed according to the progress of the processing in the first processing chamber. It can improve the throughput of the apparatus.

According to the semiconductor manufacturing apparatus of the present invention,
If there is no object to be processed in the preliminary transfer chamber at the time when the processing in the second processing chamber is completed during the processing in the first processing chamber, the processing is performed from the processing time in the first processing chamber. The semiconductor manufacturing method of the present invention can be easily performed by providing a control unit that determines whether or not the object to be processed can be exchanged between the second processing chamber and the transfer auxiliary chamber from the remaining time after subtracting the elapsed time of the processing. Can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a view for explaining a wafer transfer step according to the embodiment of the present invention;

FIG. 3 is a diagram showing a configuration of a conventional semiconductor manufacturing apparatus.

FIG. 4 is a view for explaining a conventional wafer transfer process.

[Explanation of symbols]

 1a First processing chamber 1b Second processing chamber 2 Preliminary transfer chamber 5 Control unit 6 Timer

Claims (3)

[Claims] 1. An object to be processed is carried into a first processing chamber via a preliminary transfer chamber, subjected to processing, and a processed object is carried into a second processing chamber via the preliminary transfer chamber. When performing the processing, the replacement of the workpiece between the second processing chamber and the transfer preliminary chamber,
The presence or absence of a substrate in the transfer preliminary chamber is checked, and if there is an object to be processed, the substrate to be processed is kept in the second processing chamber as it is, and if there is no object to be processed, the processing is performed in the first processing chamber. Semiconductor manufacturing method to be executed in accordance with the progress of the process. 2. An object to be processed is carried into a first processing chamber via an auxiliary transfer chamber and subjected to processing, and the processed object is subjected to a second processing in a vacuum state through the auxiliary transfer chamber. When carrying into the processing chamber and performing the processing, when the processing in the second processing chamber is completed during the processing in the first processing chamber, if there is no workpiece in the transfer preliminary chamber, It is determined from the remaining time obtained by subtracting the elapsed time of the processing from the processing time in the first processing chamber whether it is possible to exchange the workpiece between the second processing chamber and the transfer preliminary chamber. In the semiconductor manufacturing method, when the object cannot be exchanged, the object to be processed in the second processing chamber is kept in a standby state and the object to be processed is exchanged from the first processing chamber to the transfer preliminary chamber first. 3. An object to be processed is carried into the first processing chamber via the auxiliary transfer chamber and subjected to processing, and the processed object is subjected to the second processing in a vacuum state through the auxiliary transfer chamber. A processing apparatus that carries the processing object into the processing chamber and performs processing in the first processing chamber; when the processing processing in the second processing chamber is completed during the processing processing in the first processing chamber, If not, it is determined whether or not the exchange of the workpiece between the second processing chamber and the transfer preliminary chamber can be performed from the remaining time obtained by subtracting the elapsed time of the processing from the processing time in the first processing chamber. Semiconductor manufacturing apparatus provided with a control unit for performing