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JP2001107230A - Substrate holder for sputtering film formation and method of manufacturing photomask blanks using the same - Google Patents

Substrate holder for sputtering film formation and method of manufacturing photomask blanks using the same

Info

Publication number
JP2001107230A
JP2001107230A JP28126599A JP28126599A JP2001107230A JP 2001107230 A JP2001107230 A JP 2001107230A JP 28126599 A JP28126599 A JP 28126599A JP 28126599 A JP28126599 A JP 28126599A JP 2001107230 A JP2001107230 A JP 2001107230A
Authority
JP
Japan
Prior art keywords
substrate holder
glass substrate
sputtering
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28126599A
Other languages
Japanese (ja)
Other versions
JP3900759B2 (en
Inventor
Akio Kuroda
昭雄 黒田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP28126599A priority Critical patent/JP3900759B2/en
Publication of JP2001107230A publication Critical patent/JP2001107230A/en
Application granted granted Critical
Publication of JP3900759B2 publication Critical patent/JP3900759B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

(57)【要約】 【課題】ガラス基板に所定の膜をスパッタリング成膜す
る際スパッタ電圧が変動しないスパッタリング成膜用の
基板ホルダー及びそれを用いてフォトマスクブランクス
を作製する製造方法を提供することを目的とする。 【解決手段】基板ホルダー10は金属等からなる枠の部
分11とガラス基板を載置する部分12とからなり、枠
の部分11にガラス基板と同じ材質のガラスからなる所
定サイズのダミー部13を設けたものである。
(57) Abstract: Provided is a substrate holder for sputtering film formation, in which a sputter voltage does not fluctuate when a predetermined film is formed on a glass substrate by sputtering, and a method for manufacturing a photomask blank using the same. With the goal. A substrate holder includes a frame portion made of metal or the like and a portion on which a glass substrate is placed. A dummy portion of a predetermined size made of glass of the same material as the glass substrate is provided on the frame portion. It is provided.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体集積回路等
の製造に際して使用されるフォトマスク用のフォトマス
クブランクスを作製するためのスパッタリング成膜装置
で使用される基板ホルダー及びフォトマスクブランクス
の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holder and a method of manufacturing a photomask blank used in a sputtering film forming apparatus for manufacturing a photomask blank for a photomask used in manufacturing a semiconductor integrated circuit or the like. It is about.

【0002】[0002]

【従来の技術】半導体素子、IC、LSI等の半導体の
製造において、半導体ウェハに微細パターンを転写する
際に使用されるフォトマスクの製造工程としては、通
常、石英ガラス等を精密研磨して透光性基板を得る研磨
工程、透光性基板の一主表面にスパッタリング等により
クロム等の遮光膜を成膜する成膜工程、遮光膜上にレジ
スト膜をスピンコーティング法等により塗布するレジス
ト塗布工程、所定のパターンを有するマスターマスクを
通してレジスト膜を選択的に露光する露光工程、露光さ
れたレジスト膜を所定の現像液で現像し、エッチングを
行ない、所定の遮光膜パターンを得るエッチング工程等
を経て行なわれる。ここで、成膜工程で遮光膜等が形成
されたガラス基板を一般にフォトマスクブランクスと呼
んでいる。
2. Description of the Related Art In the manufacture of semiconductors such as semiconductor elements, ICs, and LSIs, the process of manufacturing a photomask used for transferring a fine pattern onto a semiconductor wafer is usually performed by precision polishing of quartz glass or the like. Polishing process for obtaining a light-transmitting substrate, film-forming process for forming a light-shielding film such as chromium on one main surface of a light-transmitting substrate by sputtering, etc., resist coating process for applying a resist film on the light-shielding film by spin coating or the like An exposure step of selectively exposing the resist film through a master mask having a predetermined pattern, an etching step of developing the exposed resist film with a predetermined developer and performing etching to obtain a predetermined light-shielding film pattern Done. Here, the glass substrate on which the light-shielding film and the like are formed in the film forming step is generally called a photomask blank.

【0003】このフォトマスクブランクスを連続式スパ
ッタリング装置を用いて作製する従来の工程について説
明する。図2は、従来より使用されている連続式スパッ
タリング装置を示す断面図である。22は成膜チャンバ
であり、この中でスパッタリングによる成膜処理が行な
われる。23はロード隔離室であり、成膜処理を行なう
対象であるガラス基板が基板ホルダー40に載置されて
おり、ここから成膜チャンバ22内に供給される。ガラ
ス基板が載置された基板ホルダー40aは成膜チャンバ
22内で成膜処理が施され、アンロード隔離室24に排
出され、ストックされる。成膜チャンバ22内では、プ
ラズマ励起を行うための下側電極26と上側電極27が
あり、ターゲット25が下側電極26上に固定されてい
る。ターゲット25は成膜すべき化合物の主成分である
金属から成る。29はチムニーであり、ターゲット25
から叩き出された原子が成膜チャンバ内に飛散しないよ
うにしてガラス基板へ飛来する方向を制御するための部
品であり、また副次的に発生する塵埃が成膜チャンバ2
2内に拡散しないようにする障壁の役目も併せ持つ。た
だし、チムニー29は必須の構成要素ではなく、なくて
済む場合もある。28はガス導入口であり、プラズマを
励起するためのガスをここから成膜チャンバの中に導入
する。31は真空排気系であり、これにより真空度を保
持し、ガスの流量を制御する。成膜チャンバ22内に供
給されたガラス基板が載置された基板ホルダー40aは
上側電極27と同電位になっていて、上側電極27と同
様の機能を有する場合もある。
[0003] A conventional process for producing this photomask blank using a continuous sputtering apparatus will be described. FIG. 2 is a sectional view showing a conventional continuous sputtering apparatus. Reference numeral 22 denotes a film forming chamber in which a film forming process by sputtering is performed. Reference numeral 23 denotes a load isolation chamber, on which a glass substrate on which a film forming process is to be performed is mounted on a substrate holder 40, and is supplied into the film forming chamber 22 from here. The substrate holder 40a on which the glass substrate is placed is subjected to a film forming process in the film forming chamber 22, discharged to the unloading isolation chamber 24, and stocked. In the film forming chamber 22, there are a lower electrode 26 and an upper electrode 27 for performing plasma excitation, and a target 25 is fixed on the lower electrode 26. The target 25 is made of a metal which is a main component of a compound to be formed into a film. 29 is a chimney and target 25
Is a component for controlling the direction in which atoms struck out of the glass substrate fly to the glass substrate so as not to scatter in the film formation chamber.
It also serves as a barrier to prevent diffusion into the interior. However, the chimney 29 is not an essential component and may be omitted. Reference numeral 28 denotes a gas introduction port through which a gas for exciting plasma is introduced into the film formation chamber. Reference numeral 31 denotes a vacuum exhaust system, which maintains a degree of vacuum and controls a gas flow rate. The substrate holder 40a on which the glass substrate supplied into the film forming chamber 22 is placed has the same potential as the upper electrode 27, and may have the same function as the upper electrode 27.

【0004】ガラス基板が載置された基板ホルダー40
aはロード隔離室23より成膜チャンバ22内に供給さ
れ、成膜チャンバ22内を水平方向に移動する。基板ホ
ルダー40aが下側電極26上に固定されたターゲット
25と上側電極27の間を移動する間に、ターゲット2
5から叩き出された原子がガラス基板の下側の表面に付
着し、所定の厚さに成膜される。成膜処理が施されたガ
ラス基板が載置されたホルダー41bはさらに水平方向
に移動し、成膜チャンバ22からアンロード隔離室24
に排出され、ストックされる。
A substrate holder 40 on which a glass substrate is placed
a is supplied from the load isolation chamber 23 into the film forming chamber 22 and moves in the film forming chamber 22 in the horizontal direction. While the substrate holder 40a moves between the target 25 fixed on the lower electrode 26 and the upper electrode 27, the target 2
The atoms struck out from 5 adhere to the lower surface of the glass substrate and are formed into a film having a predetermined thickness. The holder 41b on which the glass substrate on which the film forming process has been performed is further moved in the horizontal direction, and is moved from the film forming chamber 22 to the unload isolation chamber 24.
Is discharged and stocked.

【0005】ガラス基板が載置されたホルダー40aが
成膜チャンバ22内を移動している間にスパッタ電圧が
変動し、そのためにホルダー内の個々のガラス基板に堆
積する化合物の膜質にバラツキが発生し、その結果、光
の透過率、反射率等の光学特性にバラツキが発生すると
いう問題が生じる。なお、ここで言うスパッタ電圧と
は、上側電極27と下側電極26の電位差のことであ
る。
[0005] The sputtering voltage fluctuates while the holder 40a on which the glass substrate is placed is moving in the film forming chamber 22, and the film quality of the compound deposited on each glass substrate in the holder varies. As a result, there arises a problem that optical characteristics such as light transmittance and reflectance vary. Here, the sputtering voltage refers to a potential difference between the upper electrode 27 and the lower electrode 26.

【0006】スパッタ電圧が変動する原因を以下に説明
する。上側電極27と下側電極26の間を、ガラス基板
が載置された基板ホルダー40aのガラス基板が通過し
ているときと、ガラス基板が載置された基板ホルダー4
0aの枠の部分41が通過しているときとでは、スパッ
タ電圧に差が生じていることが判明した。すなわち、上
側電極27と下側電極26の間を、基板ホルダー40a
のガラス基板が通過しているときの方が、基板ホルダー
40の枠の部分41が通過しているときよりもスパッタ
電圧が高くなるのである。これは、ガラスの誘電率が、
基板ホルダー40の枠の部分41を構成する金属(アル
ミニウム等)の誘電率よりも高いからである。その結
果、スパッタ電圧が高い状態のときにガラス基板の上に
堆積する膜質と、スパッタ電圧が低い状態のときにガラ
ス基板の上に堆積する膜質に差が生じる。
The cause of the fluctuation of the sputtering voltage will be described below. Between the upper electrode 27 and the lower electrode 26, when the glass substrate of the substrate holder 40a on which the glass substrate is mounted passes, and when the substrate holder 4 on which the glass substrate is mounted
It was found that there was a difference in the sputter voltage when the portion 41 of the frame 0a passed. That is, the substrate holder 40a is provided between the upper electrode 27 and the lower electrode 26.
When the glass substrate passes through, the sputtering voltage is higher than when the frame portion 41 of the substrate holder 40 passes. This is because the dielectric constant of glass is
This is because the dielectric constant of the metal (such as aluminum) constituting the frame portion 41 of the substrate holder 40 is higher than that of the metal. As a result, there is a difference between the film quality deposited on the glass substrate when the sputtering voltage is high and the film quality deposited on the glass substrate when the sputtering voltage is low.

【0007】[0007]

【発明が解決しようとする課題】本発明は上記の問題点
を解決するためになされたものであり、ガラス基板に所
定の膜をスパッタリング成膜する際スパッタ電圧が変動
しないスパッタリング成膜用の基板ホルダー及びそれを
用いてフォトマスクブランクスを作製する製造方法を提
供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a substrate for sputtering film formation in which a sputtering voltage does not fluctuate when a predetermined film is formed on a glass substrate by sputtering. An object of the present invention is to provide a holder and a method for manufacturing a photomask blank using the holder.

【0008】[0008]

【課題を解決するための手段】本発明に於いて上記問題
を解決するために、まず請求項1においては、複数枚の
ガラス基板を載置した基板ホルダーがロード隔離室、成
膜チャンバ及びアンロード隔離室を移動してガラス基板
に所定の膜が成膜される連続式のスパッタリング成膜装
置において、前記基板ホルダーは前記ガラス基板を載置
する部分を除く枠の部分の少なくとも一部にガラスにて
ダミー部が形成されていることを特徴とするスパッタリ
ング成膜用の基板ホルダーとしたものである。
In order to solve the above-mentioned problems in the present invention, first, in claim 1, a substrate holder on which a plurality of glass substrates are mounted includes a load isolation chamber, a film forming chamber, and an unloading chamber. In a continuous sputtering film forming apparatus in which a predetermined film is formed on a glass substrate by moving a load isolation chamber, the substrate holder is provided with glass on at least a part of a frame portion excluding a portion on which the glass substrate is mounted. And a substrate holder for sputtering film formation, wherein a dummy portion is formed.

【0009】また、請求項2においては、請求項1に記
載するスパッタリング用の基板ホルダーを用いてスパッ
タリング成膜装置にてガラス基板にクロム等の遮光膜を
成膜することを特徴とするフォトマスクブランクスの製
造方法としたものである。
According to a second aspect of the present invention, there is provided a photomask wherein a light-shielding film such as chromium is formed on a glass substrate by a sputtering film forming apparatus using the substrate holder for a sputtering according to the first aspect. This is a blanks manufacturing method.

【0010】[0010]

【発明の実施の形態】以下本発明の実施の形態につき説
明する。図1は本発明のスパッタリング成膜用の基板ホ
ルダーの一実施例を示す平面図である。基板ホルダー1
0は金属等からなる枠の部分11とガラス基板を載置す
る部分12とからなり、枠の部分11にガラス基板と同
じ材質のガラスからなる所定サイズのダミー部13を設
けたものである。ダミー部13の枠の部分11に占める
面積の比率は、基板ホルダーとしての機能が維持できる
範囲で適宜設定することができる。このような基板ホル
ダーの構造にすることにより、スパッタリング成膜中の
スパッタ電圧の変動をなくすことができ、結果としてガ
ラス基板上に堆積する膜質のバラツキを防止することが
でき、基板ホルダーにセットされた個々のフォトマスク
ブランクスの面内での光の透過率、反射率等の光学特性
のバラツキをなくすことができる。
Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an embodiment of a substrate holder for sputtering film formation according to the present invention. Substrate holder 1
Reference numeral 0 denotes a frame portion 11 made of metal or the like and a portion 12 on which a glass substrate is placed. The frame portion 11 is provided with a dummy portion 13 of a predetermined size made of glass of the same material as the glass substrate. The ratio of the area occupied by the dummy portion 13 to the frame portion 11 can be appropriately set as long as the function as the substrate holder can be maintained. By adopting such a structure of the substrate holder, it is possible to eliminate the fluctuation of the sputtering voltage during the sputtering film formation, thereby preventing the variation of the film quality deposited on the glass substrate, and setting the substrate holder. In addition, variations in optical characteristics such as light transmittance and reflectance in the plane of each photomask blank can be eliminated.

【0011】[0011]

【実施例】本発明の基板ホルダー10はアルミニウム等
の枠の部分11とガラス基板を載置する部分12とから
なり、枠の部分11に所定のサイズの窓明き部を形成し
所定サイズのガラス基板をはめ込みダミー部13を形成
した。さらに、この基板ホルダー10を用いてガラス基
板をセットして、スパッタリング成膜装置のロード隔離
室にロードし、成膜チャンバにてクロムを所定の厚みで
スパッタリング成膜し、フォトマスクブランクスを作製
した。このように、基板ホルダー10の枠の部分11に
ガラスでダミー部13を設けてあるので、ホルダー全体
としての誘電率をガラスの誘電率に近づけることができ
る。その結果、スパッタリング成膜装置の下側電極と上
側電極の間をガラス基板が通過しているときと、ホルダ
ーの枠の部分が通過しているときとで、スパッタ電圧に
差が生じることがなく、光の透過率、反射率等の光学特
性のバラツキのないフォトマスクブランクスを得ること
ができた。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A substrate holder 10 of the present invention comprises a frame portion 11 made of aluminum or the like and a portion 12 on which a glass substrate is placed. A dummy portion 13 was formed by fitting a glass substrate. Further, a glass substrate was set using the substrate holder 10 and loaded into a load isolation chamber of a sputtering film forming apparatus, and chromium was sputtered to a predetermined thickness in the film forming chamber to produce a photomask blank. . Thus, since the dummy portion 13 is made of glass in the frame portion 11 of the substrate holder 10, the dielectric constant of the entire holder can be made closer to the dielectric constant of glass. As a result, there is no difference in sputtering voltage between when the glass substrate passes between the lower electrode and the upper electrode of the sputtering film forming apparatus and when the frame portion of the holder passes. Thus, a photomask blank having no variation in optical characteristics such as light transmittance and reflectance could be obtained.

【0012】<比較例>図3に示す従来の基板ホルダー
40を使って実施例と同様な装置でスパッタリング成膜
を行いフォトマスクブランクスを作製した。基板ホルダ
ー40の枠の部分41は全てアルミニウム等の金属から
成るので、枠の部分の誘電率はガラス基板の誘電率より
著しく低くなり、その結果、下側電極と上側電極の間
を、ガラス基板が通過しているときと、枠の部分41が
通過しているときとで、スパッタ電圧に大きな差が生
じ、得られたフォトマスクブランクスの面内の光の透過
率、反射率等の光学特性がバラツキを示した。
Comparative Example Using a conventional substrate holder 40 shown in FIG. 3, a film was formed by sputtering using the same apparatus as in the embodiment, and a photomask blank was produced. Since the frame portion 41 of the substrate holder 40 is entirely made of a metal such as aluminum, the dielectric constant of the frame portion is significantly lower than that of the glass substrate. As a result, the gap between the lower electrode and the upper electrode is There is a large difference in the sputter voltage between the time when the light passes and the time when the frame portion 41 passes, and the optical characteristics such as the transmittance and the reflectance of the in-plane light of the obtained photomask blank are obtained. Showed variation.

【0013】[0013]

【発明の効果】上記したように、本発明の基板ホルダー
を使ってスパッタリング成膜することにより、スパッタ
リング成膜中のスパッタ電圧の変動をなくすことがで
き、結果としてガラス基板上に堆積する膜質のバラツキ
を防止することができ、基板ホルダーにセットされた個
々のフォトマスクブランクスの面内での光の透過率、反
射率等の光学特性のバラツキをなくすことができる。
As described above, by performing the sputtering film formation using the substrate holder of the present invention, the fluctuation of the sputtering voltage during the sputtering film formation can be eliminated, and as a result, the quality of the film deposited on the glass substrate can be reduced. Variations can be prevented, and variations in optical characteristics such as light transmittance and reflectance in the plane of each photomask blank set in the substrate holder can be eliminated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る基板ホルダーの一実施例を示す平
面図である。
FIG. 1 is a plan view showing one embodiment of a substrate holder according to the present invention.

【図2】スパッタリング成膜装置の一例を示す模式断面
図である。
FIG. 2 is a schematic sectional view illustrating an example of a sputtering film forming apparatus.

【図3】従来の基板ホルダーの一例を示す平面図であ
る。
FIG. 3 is a plan view showing an example of a conventional substrate holder.

【符号の説明】[Explanation of symbols]

10、40・・・・・・基板ホルダー 11、41・・・・・・枠の部分 12、42・・・・・・ガラス基板を載置する部分 13・・・・・・ダミー部 22・・・・・・成膜チャンバ 23・・・・・・ロード隔離室 24・・・・・・アンロード隔離室 25・・・・・・ターゲット 26・・・・・・下側電極 27・・・・・・上側電極 28・・・・・・ガス導入口 29・・・・・・チムニー 31・・・・・・真空排気系 40a・・・・・・ガラス基板が載置された基板ホルダー 40b・・・・・・成膜されたガラス基板が載置された基板ホ
ルダー
10, 40 ... substrate holder 11, 41 ... frame part 12, 42 ... part on which glass substrate is mounted 13 ... dummy part 22 ····· Deposition chamber 23 ···· Load isolation chamber 24 ····· Unload isolation chamber 25 ····· Target 26 ······ Lower electrode 27 ··· ... Upper electrode 28... Gas inlet 29... Chimney 31... Vacuum exhaust system 40 a. 40b ...... Substrate holder on which the deposited glass substrate is placed

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】複数枚のガラス基板を載置した基板ホルダ
ーがロード隔離室、成膜チャンバ及びアンロード隔離室
を移動してガラス基板に所定の膜が成膜される連続式の
スパッタリング成膜装置において、前記基板ホルダーは
前記ガラス基板を載置する部分を除く枠の部分の少なく
とも一部にガラスにてダミー部が形成されていることを
特徴とするスパッタリング成膜用の基板ホルダー。
1. A continuous sputtering film forming method in which a substrate holder on which a plurality of glass substrates are mounted moves in a load isolation chamber, a film formation chamber and an unload isolation chamber to form a predetermined film on a glass substrate. In the apparatus, the substrate holder has a dummy portion formed of glass on at least a part of a frame portion excluding a portion on which the glass substrate is mounted, and a substrate holder for sputtering film formation.
【請求項2】請求項1に記載するスパッタリング用の基
板ホルダーを用いてスパッタリング成膜装置にてガラス
基板にクロム等の遮光膜を成膜することを特徴とするフ
ォトマスクブランクスの製造方法。
2. A method for manufacturing a photomask blank, comprising forming a light-shielding film such as chromium on a glass substrate using a sputtering film-forming apparatus using the substrate holder for sputtering according to claim 1.
JP28126599A 1999-10-01 1999-10-01 Substrate holder for sputtering film formation and method for manufacturing photomask blanks using the same Expired - Fee Related JP3900759B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008304497A (en) * 2007-06-05 2008-12-18 Nippon Dempa Kogyo Co Ltd Optical thin film forming method, optical substrate, and optical thin film forming apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05230651A (en) * 1992-02-24 1993-09-07 Nikon Corp Sputtering film deposition substrate holder
JPH05297570A (en) * 1992-04-20 1993-11-12 Toppan Printing Co Ltd Photomask blank manufacturing method
JPH06220628A (en) * 1993-01-26 1994-08-09 Clean Saafueisu Gijutsu Kk Sputtering device
JPH09143733A (en) * 1995-11-16 1997-06-03 Canon Inc Sputtered film manufacturing method and sputtered film
JPH1115140A (en) * 1997-06-24 1999-01-22 Dainippon Printing Co Ltd Photo mask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05230651A (en) * 1992-02-24 1993-09-07 Nikon Corp Sputtering film deposition substrate holder
JPH05297570A (en) * 1992-04-20 1993-11-12 Toppan Printing Co Ltd Photomask blank manufacturing method
JPH06220628A (en) * 1993-01-26 1994-08-09 Clean Saafueisu Gijutsu Kk Sputtering device
JPH09143733A (en) * 1995-11-16 1997-06-03 Canon Inc Sputtered film manufacturing method and sputtered film
JPH1115140A (en) * 1997-06-24 1999-01-22 Dainippon Printing Co Ltd Photo mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008304497A (en) * 2007-06-05 2008-12-18 Nippon Dempa Kogyo Co Ltd Optical thin film forming method, optical substrate, and optical thin film forming apparatus
US8367191B2 (en) 2007-06-05 2013-02-05 Nihon Dempa Kogyo Co., Ltd. Optical thin-films and optical elements comprising same

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