JP2001137766A - Treatment liquid supply method and treatment liquid supply apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To previously remove a gas dissolved in a resist liquid in a resist liquid supply apparatus. SOLUTION: In a resist liquid supply apparatus 80 having a function of pumping up a resist liquid to a buffer tank 90 on the floor F from a liquid end tank 83 at a position lower than the floor F by several meters by a first pump 82, a second valve 94 is installed in a second pipeline 91, a third pipeline 95 is branched from the second pipeline 91 and a first valve 96 for opening and closing the third pipeline is installed. When the first pump 82 is stopped, the second valve 94 is closed and the first valve 96 is opened, a negative pressure space is generated beneath the second valve 94 owing to the self weight of the resist liquid in the second pipeline 91 to precipitate the dissolved gas.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a processing liquid supply method and a processing liquid supply apparatus for supplying a processing liquid to a substrate.

[0002]

2. Description of the Related Art In a photoresist processing step in the manufacture of semiconductor devices, a coating process of forming a resist film by applying a resist liquid on the surface of a semiconductor wafer (hereinafter, "wafer") is performed. The resist solution used for such treatment is pumped up from a chemical solution cabinet provided several meters below the floor using a pump, and temporarily stored in a buffer tank, which is a temporary storage container for supply, on the floor, and from there as needed. It has been supplied onto the wafer using a pumping means such as a pump or an air operator.

[0003]

However, when the resist solution applied on the wafer is pumped from a few meters below the floor by a pump, the pressure applied to the resist solution fluctuates violently and becomes unstable. In some cases, gas dissolved as a liquid in the resist liquid, that is, dissolved gas is vaporized to generate bubbles. When the wafer is supplied from the buffer tank to the wafer, the liquid is sucked by the discharge pump, and a negative pressure is generated relative to the resist liquid in the buffer tank. May foam. If the resist solution containing such bubbles is directly applied to the wafer, the resist film is not uniformly formed without unevenness, which leads to a defective product, which is not preferable.

[0004] The present invention has been made in view of the above points, and a method for removing bubbles generated in a resist solution,
It is an object of the present invention to provide a device having a function of eliminating the above problem and to solve the above-mentioned problem.

[0005]

In order to achieve the above object, according to the first aspect of the present invention, a processing liquid from a processing liquid supply source is pumped up by a pump, and the processing liquid supply source and the supply buffer tank are separated. A processing liquid supply method for transferring the processing liquid to the supply buffer tank at a higher position than the processing liquid supply source, that is, at a higher position than the processing liquid supply source, and supplying the processing liquid to the substrate from the supply buffer tank through the connecting pipe. A process liquid supply method is provided, which comprises a step of depositing dissolved gas as bubbles in piping.

As described above, by dissolving the dissolved gas as bubbles before the treatment liquid is transported in the pipe, that is, in the supply buffer tank, the treatment liquid containing no dissolved gas is removed from the supply buffer tank by the substrate. The substrate and the processing film formed on the substrate are not adversely affected by the dissolved gas.

According to the second aspect of the present invention, the processing liquid from the processing liquid supply source is pumped up by a pump, and the supply liquid at a higher level than the supply source is passed through a pipe connecting the processing liquid supply source and the supply buffer tank. A processing liquid supply method for transferring a processing liquid from a supply buffer tank to a substrate and transferring the processing liquid from the supply buffer tank to a substrate, comprising: a branch pipe branched from the pipe; and a first valve provided in the branch pipe. When,
A second valve provided on the pipe and positioned higher than the first valve, wherein the pump is operated in a state where the first valve is closed and the second valve is opened. A first step of operating and pumping the processing liquid from the processing liquid supply source, a second step of stopping the pump, closing the second valve, and opening the first valve; A third step of re-closing the valve and opening the second valve, and a fourth step of operating the pump again to supply the processing liquid to the supply buffer tank. A method for supplying a processing liquid is provided.

Thus, while the processing liquid is being pumped through the pipe, the pump is stopped, the second valve is closed, and the first valve is opened. Due to its own weight, it is lowered, and a relative negative pressure space is created between the upper end surface of the processing liquid column in the pipe and the second valve. As a result, the dissolved gas in the processing liquid precipitates from the processing liquid and is separated from the processing liquid into a negative pressure space. Accordingly, by transferring the processing liquid in the pipe at this time into the buffer tank, the processing liquid free of dissolved gas is stored in the buffer tank. Therefore, when this processing liquid is supplied onto the substrate, it does not adversely affect the substrate or the processing film formed on the substrate. One end of the branch pipe may be an open end, or may be connected to an appropriate tank.

Further, according to a third aspect of the present invention, the branch pipe comprises:
The processing liquid supply method according to claim 2 may be performed by bypassing the pump and communicating with the processing liquid supply source. In this case, the processing liquid in the branch pipe is returned to the processing liquid supply source and reused as the processing liquid.

According to a fourth aspect of the present invention, the processing liquid from the processing liquid supply source is pumped up by a pump and transferred to the higher supply buffer tank through a pipe connecting the processing liquid supply source and the supply buffer tank. And a processing liquid supply device for supplying the processing liquid from the supply buffer tank to the substrate, comprising: a branch pipe branched from the pipe; a first valve provided in the branch pipe; And a second valve positioned higher than the first valve. Note that one end of the branch pipe may be an open end, or may be connected to an appropriate tank.

According to the fourth aspect of the present invention, the pump is stopped, the second valve is closed, and the first valve is opened while the processing liquid is being pumped through the pipe. Accordingly, the processing liquid supply method of claim 2 can be appropriately performed. Therefore, the processing liquid containing no dissolved gas is supplied onto the substrate from the buffer tank, and does not adversely affect the substrate or the processing film formed on the substrate.

According to a fourth aspect of the present invention, the branch pipe may be configured to bypass the pump and connect the processing liquid supply source to the pipe. . In this way, by connecting the end of the branch pipe to the processing liquid supply source, the processing liquid in the branch pipe can be returned to the processing liquid supply source and again supplied from the pump to the buffer tank. ， Do not waste the processing liquid.

According to the fourth and fifth aspects of the present invention, as in the sixth aspect, the storage volume of the supply buffer tank is at least larger than the volume in the pipe between the first valve and the second valve. May also be configured to be small. Here, the storage volume of the buffer tank is the maximum volume in which the processing liquid can be supplied to and stored in the buffer tank.

According to the sixth aspect of the present invention, the volume of the processing liquid stored in the buffer tank is always calculated from the storage volume of the buffer tank by the amount of the processing liquid in the pipe from which the dissolved gas has been removed. Less than the volume. That is, the processing liquid supplied to the buffer tank is always
The treatment liquid does not contain dissolved gas. Therefore, when the processing liquid is supplied from the buffer tank to the substrate, the substrate and the processing film formed on the substrate are not adversely affected.

According to the seventh aspect of the present invention, the fourth or fifth aspect is provided.
Controlling the pump so that the volume of the processing liquid stored in the supply buffer tank is kept smaller than at least the volume in the pipe between the first valve and the second valve. Means may be provided.

According to the seventh aspect of the present invention, only the processing liquid from which the dissolved gas has been removed in the pipe can be supplied to the buffer tank by the control means of the pump. Therefore, only the processing liquid containing no dissolved gas can be stored in the supply buffer tank. Therefore, the processing liquid supplied onto the substrate from the buffer tank does not adversely affect the substrate or the processing film formed on the substrate.

According to the seventh aspect of the present invention, in the eighth aspect,
As described above, the supply buffer tank may have a detecting means for detecting a liquid level, and the pump may be controlled based on the liquid level detected by the sensor.

According to the invention of claim 8, by controlling the pump based on the level of the liquid level detected by the detecting means, only the processing liquid from which the dissolved gas has been removed in the pipe is stored in the buffer tank. The detection means is set so as to control the storage amount. Therefore, the processing liquid from which the dissolved gas has been removed can always be supplied to the substrate.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view of a coating and developing system 1 having a coating liquid supply device according to the present embodiment, FIG. 2 is a front view of the coating and developing system 1, and FIG. 1 is a rear view of FIG.

As shown in FIG. 1, the coating and developing system 1 carries, for example, 25 wafers W into and out of the coating and developing system 1 from the outside in units of cassettes and carries wafers W into and out of the cassette C. A cassette station 2 for unloading, a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-sheet type in a coating and developing processing step are arranged in multiple stages, and provided adjacent to the processing station 3. An interface unit 4 for transferring a wafer W to and from an exposure apparatus (not shown) is integrally connected.

In the cassette station 2, a plurality of cassettes C can be placed in a row in the X direction (vertical direction in FIG. 1) at predetermined positions on a cassette placing table 5 serving as a placing section. Then, the cassette arrangement direction (X direction) and the wafer arrangement direction (Z
(A vertical direction) is provided movably along a transfer path 8 so that each cassette C can be selectively accessed.

As will be described later, the wafer carrier 7 is configured to be able to access the alignment device 32 and the extension device 33 belonging to the third processing device group G3 on the processing station 3 side.

In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to constitute a processing device group. In the coating and developing system 1, four processing unit groups G1, G2, G3, G4 are arranged, and the first and second processing unit groups G1, G2 are arranged on the front side of the developing system 1. , The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is
It is arranged adjacent to the interface unit 4. Further, a fifth processing unit group G5 indicated by a broken line as an option can be separately arranged on the back side.

In the first processing apparatus group G1, for example, as shown in FIG. 2, two types of spinner type coating processing apparatuses, a resist coating apparatus 17 having a resist liquid supply apparatus according to the present embodiment, and a wafer W Developing devices 18 for supplying and processing the developing solution are arranged in two stages from the bottom. Similarly, in the case of the second processing unit group G2, the resist coating unit 1
9 and the developing device 20 are stacked in two stages in order from the bottom.

In the third processing unit group G3, for example, as shown in FIG.
0, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, an alignment device 32 for aligning the wafer W, an extension device 33 for holding the wafer W on standby, and a pre-baking device for drying the solvent in the resist solution 34, 35, and post-baking devices 36, 37 for performing a heat treatment after the development treatment are stacked in, for example, eight stages from the bottom.

In the fourth processing unit group G4, for example, a cooling device 40, an extension cooling device 41 for naturally cooling the mounted wafer W, an extension device 42, a cooling device 43, and a post-exposure for performing a heating process after the exposure process. Baking equipment 44,4
5, post-baking devices 46, 47, etc. are stacked in, for example, eight stages from the bottom.

A wafer carrier 50 is provided at the center of the interface section 4. The wafer transfer body 50 is configured to freely move in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction), and rotate in the θ direction (rotation direction about the Z axis). , An extension cooling device 41, an extension device 42, a peripheral exposure device 51, and an exposure device (not shown) belonging to the fourth processing device group G4.

Next, the resist coating device 17 will be described. As shown in FIG. 4, the resist coating apparatus 17 has a cup 60 for accommodating a wafer W being processed in a casing 17a. The cup 60 has an upper opening, and is configured to collect a resist liquid as a processing liquid that scatters from the peripheral edge of the wafer W to the periphery while surrounding the side and lower sides of the wafer W being processed. The bottom of the cup 60 is provided with a drainage and exhaust pipe 61 and the like which are connected to each other. A spin chuck 62 that rotates around a vertical axis while holding the wafer W in a substantially horizontal posture is provided in the cup 60. This spin chuck 6
2 is rotationally driven by a motor 63 outside the cup 60. The spin chuck 62 is configured to be vertically movable by a drive mechanism (not shown) for carrying in and out the wafer W.

The cup 60 in the resist coating device 17
Above, for example, a resist liquid supply nozzle 65 for supplying a resist liquid to the wafer W and a solvent supply nozzle 66 for supplying a solvent of the resist liquid to the wafer W are provided. The resist solution supply nozzle 65 is connected to a resist solution supply device 80, and the resist solution supplied from the resist solution supply device 80 is discharged from the resist solution supply nozzle 65 and applied to the wafer W. Have been.

Next, the resist liquid supply device 80 will be described in detail. As shown in FIG. 5, the resist solution is stored in a chemical solution cabinet 81 provided several meters below the floor F of the coating and developing system 1. A liquid end tank 83 as a processing liquid supply source for temporarily storing a resist liquid is provided adjacent to the chemical liquid cabinet 81 in order to prevent a first pump 82 from being idled later. The liquid end tank 83 and the chemical solution cabinet 81 are connected by a first conduit 84. This liquid end tank 8
Reference numeral 3 denotes a tank having a cylindrical outer shape, and an auxiliary conduit 85 extends from the upper portion. The auxiliary pipe 85 is for removing gas in the pipe 84 and releasing the pressure when the resist liquid is sucked by a first pump 82 described later. Note that a valve 86 is attached to the auxiliary pipeline 85. In the process of removing the gas in the pipeline 84, first, the chemical solution cabinet 81 is pressurized and the valve 86 is opened. When the gas is removed from the auxiliary pipe 85 and the gas is exhausted from the pipe 84, the valve 86 is closed. Finally, the pressurization of the chemical solution cabinet 81 is released, and the gas elimination is completed. The liquid end tank 83 has a sensor 8 for detecting a shortage of the resist solution in the tank 83.
When the water level of the resist solution drops to a predetermined position, the sensor 87 is activated and the driving of the first pump 82 can be stopped by the pump control device 100 described later.

The liquid end tank 83 is connected to a buffer tank 90 described later by a second pipe 91. The buffer tank 90 is placed on a floor F that is several meters higher than the liquid end tank 83, for example. The second pump 91 has a first pump 82
The first pump 82 is configured to pump the resist solution in the liquid end tank 83 to the buffer tank 90. In addition, a second valve 94 is provided in the second pipe 91 with a buffer tank 90.
, So that the second pipeline 91 can be opened and closed on the floor F.

Further, a third pipe 95 as a branch pipe is branched from the second pipe 91 below the floor F and below the floor F and upstream of the second valve 94. The end of the pipe 95 communicates with the liquid end tank 83. A first valve 96 is attached to the third conduit 95 so as to open and close the third conduit 95. Note that, as described above, the first valve 96 is configured to be located lower than the second valve 94.

The buffer tank 90 for temporarily storing the resist solution pumped up by the first pump 82 is
It has a substantially cylindrical shape, and on its upper surface, an auxiliary pipe 97 communicating with the atmosphere is provided.
8 are provided. Also, in the buffer tank 90,
For example, a high level liquid level sensor 99a as a detecting means for detecting the level of the liquid level in the buffer tank 90 and outputting a signal for stopping the driving of the first pump 82 when the level reaches a predetermined level. And a low level liquid level sensor 99b for detecting a shortage of the resist liquid in the buffer tank 90.

Here, when the liquid level in the buffer tank 90 rises, the predetermined height is set so that, for example, the amount of the resist liquid in the buffer tank 90 becomes smaller than the total volume of the second conduit 91. Is set to a proper height. When the liquid level in the buffer tank 90 reaches a predetermined level by the high-level liquid level sensor 99a, a signal indicating this is output to the pump controller 100, and the first pump 82 is stopped. Is done. On the other hand, the low level liquid level sensor 99b detects the shortage of the resist liquid in the buffer tank 90, and the first pump 82 is operated via the pump control device 100 by the signal.

The bottom surface of the buffer tank 90 and the resist liquid supply nozzle 65 in the resist coating device 17 are connected by a fourth conduit 105. In the fourth conduit 105, a diaphragm-type second diaphragm-type nozzle for supplying a resist solution to the resist solution supply nozzle 65 in order from the buffer tank 90 side.
Pump 106, a filter 107 for removing impurities in the resist solution, and a third valve 108 for controlling the supply to the resist solution supply nozzle 65. These second pump 106, filter 107 and third valve 10
8 is controlled by a controller (not shown).

The operation of the resist solution supply device 80 configured as described above will be described together with the process of coating and developing the wafer W performed by the coating and developing system 1.

First, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C and carries it into the alignment device 32 belonging to the third processing device group G3. Next, the wafer W whose alignment has been completed by the alignment device 32
Is controlled by the main transporting device 13 so that the adhesion device 3
1, are sequentially conveyed to the cooling device 30. Thereafter, the wafer W is transferred to the resist coating device 17 or 19 having the resist liquid supply device according to the present embodiment.

Then, the wafer W on which a predetermined resist film is formed by the resist coating device 17 or 19 is subsequently transferred to the pre-baking device 33 or 34 and the extension cooling device 41 in that order.

Thereafter, an exposure process, a development process, and the like are performed in each processing device, and a series of predetermined coating and developing processes are completed.

Here, the operation of the resist coating device 17 will be described in detail.

First, the wafer W for which the pre-processing has been completed is carried into the resist coating device 17 by the main carrier device 13. Then, the wafer W is suction-held by the spin chuck 62 which has been raised and waited in advance by a driving mechanism (not shown), lowered by the driving mechanism (not shown), and
Stop at a predetermined position in Thereafter, the motor 63 is driven to rotate the wafer W at a predetermined rotation speed, and first, a predetermined solvent is supplied to the wafer W from the solvent supply nozzle 66. Thereafter, the resist liquid supplied by the resist liquid supply device 80 is discharged from the resist liquid supply nozzle 65. Then, the wafer W on which the predetermined resist film is formed is raised again by a driving mechanism (not shown), delivered to the main carrier 13 and carried out of the resist coating device 17.

Here, the operation of the resist liquid supply device 80 will be described in detail. First, when the liquid level of the resist liquid in the buffer tank 90 drops to a predetermined position, the low-level liquid level sensor 99b detects this and sends a signal to that effect to the pump control device 100. Then, the pump control device 100 outputs an ON signal to the first pump 82, and the first pump 82 operates as shown in FIG. Then, the resist solution in the chemical solution cabinet 81 is supplied to the first conduit 84 and the second conduit 9 having the opened second valve 94.
1 to the buffer tank 90. At this time, the first valve 96 is closed. Here, in FIG. 6 and FIGS. 7 and 8 described later, the first valve 96
And the second valve 94 indicates a closed state when painted black, and shows an open state when painted white. When the liquid level in the buffer tank 90 reaches a predetermined level, the high-level liquid level sensor 99a operates, and the first pump 82 is stopped by the pump control device 100.

Next, as shown in FIG. 7, the second valve 94 is closed and the first valve 96 is opened. As a result, the resist liquid remaining in the second pipe 91 descends due to its own weight, and a negative pressure space T is generated relative to the resist liquid that is about to fall directly below the second valve 94. Due to this negative pressure, the dissolved gas in the resist solution in the pipeline, that is, the portion indicated by the hatched lines in FIG. 7 is precipitated as bubbles and accumulated in the negative pressure space T. In addition, as described above, one end of the liquid column of the resist liquid which has been lowered by its own weight reaches the liquid end 83 through the third conduit 95, and is discharged to the liquid end 83 as much as it has been lowered. Thereafter, it is again pumped by the first pump 82 and used as a coating liquid. After the dissolved gas is deposited from the resist solution in this manner, the first valve 96 is closed and the second valve 94 is opened.

On the other hand, when supplying the resist solution from the buffer tank 90 onto the wafer W, first, the third valve 106 is opened and the resist solution fed under pressure passes through the fourth conduit 105 to supply the resist solution. This is performed by discharging from the nozzle 65. The timing of this discharge is controlled by controlling the second pump 106 and the third valve 108 by a controller (not shown) after the wafer W is loaded into the resist coating device 17.

Next, when the resist liquid is supplied from the buffer tank 90 onto the wafer W and the liquid level in the buffer tank 90 decreases to a predetermined position, the low level liquid level sensor 99b is operated again, and the pump controller 100 is operated. FIG. 8
As shown in (1), the first pump 82 is operated. Thereby, the resist solution from which the dissolved gas has been deposited is transferred into the buffer tank 90. The dissolved gas deposited at this time is exhausted from the auxiliary pipe 97 of the buffer tank 90, and only the resist solution from which the dissolved gas has been removed is stored in the buffer tank 90. When the liquid level reaches a predetermined level, the high level liquid level sensor 99a sends a signal to the first pump 82 via the pump control device 100, and the supply to the buffer tank 90 is stopped. Here, as described above, the amount of the resist solution stored in the buffer tank 90 is reduced to the second line 91.
At a point in time smaller than the total volume of
a is set to send a signal, so the second
The resist liquid from which the dissolved gas has not been removed does not flow into the buffer tank 90 in the pipe line 91. Therefore, except for the first time, the resist liquid from which the dissolved gas is removed is always supplied into the buffer tank 90.

By repeating the above process,
In the second pipe 91, the dissolved gas is separated from the resist solution, and the buffer tank 90 can be provided with a resist solution containing no dissolved gas. Therefore, even if the second pump 106 generates a relative negative pressure in the fourth conduit 105 with respect to the resist solution in the buffer tank 90, the dissolved gas does not foam and contains bubbles. Since a non-resist liquid is supplied onto the wafer W, a uniform resist film without spots can be formed.

Here, in the resist liquid supply device 80, the liquid level sensors 99a and 99a are supplied so that only the resist liquid from which dissolved gas is separated is supplied into the buffer tank 90.
Although the storage amount in the buffer tank 90 is controlled using 99b, a buffer tank having a smaller capacity than the total volume in the second pipe 91 may be used. Further, a control means for controlling the first pump 82 may be provided so that the resist liquid in the second conduit 91 is not entirely pumped into the buffer tank 90 by one pumping. By doing so, the resist solution stored in the buffer tank is one in which the dissolved gas is always removed, and the second pump 10
6 supplies a resist solution on the wafer W that is unlikely to generate bubbles.

In the above embodiment, the dissolved gas is deposited as bubbles by utilizing the pressure fluctuation of the resist solution. However, for example, the temperature of the resist solution is changed before entering the buffer tank 90 to change the dissolved gas. Bubbles may be deposited. Further, in the above embodiment, the resist liquid supply device for supplying the resist liquid to the coating processing device is embodied, but other processing liquid supply devices such as a developer liquid supply device may of course be used. Further, although the substrate is the wafer W, the present invention is of course applicable to other rectangular substrates, for example, an LCD substrate coating apparatus.

[0049]

According to the first aspect of the present invention, since the processing liquid containing no dissolved gas is supplied from the supply buffer tank to the substrate, the substrate and the film formed on the substrate are not adversely affected by the dissolved gas. As a result, a predetermined resist film is appropriately formed, and the yield is improved.

According to the second to eighth aspects of the present invention, the dissolved gas can be precipitated as bubbles by the pressure fluctuation in the piping. Then, only the processing liquid from which the dissolved gas has been removed can be supplied to the buffer tank. Therefore, a dissolved gas that adversely affects the substrate and the film formed on the substrate is less likely to be supplied onto the substrate, so that a predetermined resist film is formed and the yield is improved.

According to the invention of claims 6, 7, and 8,
Since only the processing liquid from which the dissolved gas has been removed is supplied to the supply buffer tank, the substrate and the film formed on the substrate are not adversely affected, and the yield is further improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing the appearance of a coating and developing processing system provided with a resist coating device having a resist liquid supply device according to the present embodiment.

FIG. 2 is a front view of the coating and developing system of FIG.

FIG. 3 is a rear view of the coating and developing system of FIG. 1;

FIG. 4 is an explanatory view of a longitudinal section of a resist coating device having a resist liquid supply device according to the present embodiment.

FIG. 5 is an explanatory diagram of a resist liquid supply device according to the present embodiment.

FIG. 6 is an explanatory view of a main part showing a state where the resist liquid is pumped up from a chemical solution cabinet to a buffer tank by a pump in the resist liquid supply device of FIG. 5;

7 is an explanatory view of a main part of the resist liquid supply device of FIG. 5, showing a state where the pump is stopped from the state of FIG. 6, the second valve is closed, and the first valve is opened.

8 is an explanatory view of a main part of the resist liquid supply device of FIG. 5, showing a state in which the first valve is closed, the second valve is opened, and the pump is operated again from the state of FIG.

[Explanation of symbols]

 Reference Signs List 1 coating / developing processing system 17 resist coating device 80 resist liquid supply device 82 first pump 83 liquid-end tank 90 buffer tank 91 second pipe 94 second valve 95 third pipe 96 first valve 106 first 2 pump W wafer

Continued on the front page (72) Inventor Shinwa Ishizaka 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Inside the Kumamoto Office of Tokyo Electron Kyushu Co., Ltd. F-term in Kumamoto Plant Co., Ltd. (reference) 2H025 AA18 AB15 AB16 EA04 4D075 AC64 AC84 AC93 DA06 DC22 EA45 4F042 AA07 BA09 CA01 CA07 CB02 CB08 CB19 CB20 EB00 5F046 JA01 JA03

Claims (8)

[Claims] 1. A processing liquid from a processing liquid supply source is pumped up by a pump, and is passed through a pipe connecting the processing liquid supply source and the supply buffer tank to the supply buffer tank higher than the processing liquid supply source. A processing liquid supply method for transferring and supplying a processing liquid from a supply buffer tank to a substrate, the method including a step of depositing dissolved gas in the processing liquid as bubbles in the pipe. , Processing liquid supply method. 2. A processing liquid supplied from a processing liquid supply source is pumped up by a pump, and is passed through a pipe connecting the processing liquid supply source and the supply buffer tank to the supply buffer tank higher than the processing liquid supply source. A processing liquid supply method for transferring and supplying a processing liquid from a supply buffer tank to a substrate, comprising: a branch pipe branched from the pipe; a first valve provided in the branch pipe; And a second valve located higher than the first valve, wherein the pump is operated with the first valve closed and the second valve opened. A first step of pumping the processing liquid from the processing liquid supply source, a second step of stopping the pump, closing the second valve and opening the first valve, and A third step of closing again and opening said second valve; And a fourth step of operating the pump again to supply the processing liquid to the supply buffer tank. 3. A processing liquid from a processing liquid supply source is pumped up by a pump, and is passed through a pipe connecting the processing liquid supply source and the supply buffer tank to the supply buffer tank higher than the processing liquid supply source. A processing liquid supply method for transferring the processing liquid from the supply buffer tank to the substrate, wherein the branch pipe bypasses the pump and connects the processing liquid supply source to the pipe; A first valve provided, and a second valve provided in the pipe and positioned higher than the first valve, wherein the first valve is closed and the second valve is In the opened state, the pump is operated to pump the processing liquid from the processing liquid supply source, and the pump is stopped, the second valve is closed, and the first valve is opened. In the second step, the first valve is closed again and A third step of opening the second valve; and a fourth step of operating the pump again to supply the processing liquid to the supply buffer tank. . 4. A processing liquid from a processing liquid supply source is pumped up by a pump and transferred to a higher supply buffer tank through a pipe connecting the processing liquid supply source and the supply buffer tank. A processing liquid supply device for supplying a processing liquid from a buffer tank to a substrate, comprising: a branch pipe branched from the pipe; a first valve provided in the branch pipe; and a first valve provided in the pipe. And a second valve positioned higher than the second valve. 5. The processing liquid supply apparatus according to claim 4, wherein the branch pipe bypasses the pump and connects the processing liquid supply source to the pipe. 6. A storage volume of the supply buffer tank is configured to be kept at least smaller than a volume in the pipe between the first valve and the second valve. The processing liquid supply device according to claim 4, wherein 7. The pump is controlled such that a volume of the processing liquid stored in the supply buffer tank is smaller than at least a volume in the pipe between the first valve and the second valve. 6. The processing liquid supply device according to claim 4, further comprising a control unit. 8. The supply buffer tank has detection means for detecting the level of the liquid level in the supply buffer tank, and based on the level of the liquid level detected by the detection means, 8. The processing liquid supply device according to claim 7, wherein the pump is configured to be controlled.