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JP2001244409A - High frequency module - Google Patents

High frequency module

Info

Publication number
JP2001244409A
JP2001244409A JP2000053999A JP2000053999A JP2001244409A JP 2001244409 A JP2001244409 A JP 2001244409A JP 2000053999 A JP2000053999 A JP 2000053999A JP 2000053999 A JP2000053999 A JP 2000053999A JP 2001244409 A JP2001244409 A JP 2001244409A
Authority
JP
Japan
Prior art keywords
frequency
dielectric substrate
circuit board
circuit
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000053999A
Other languages
Japanese (ja)
Inventor
Shinichi Koriyama
慎一 郡山
Naoyuki Shino
直行 志野
Hidehiro Nanjiyou
英博 南上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000053999A priority Critical patent/JP2001244409A/en
Publication of JP2001244409A publication Critical patent/JP2001244409A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Combinations Of Printed Boards (AREA)

Abstract

(57)【要約】 【課題】高周波素子を収納した高周波素子パッケージを
回路基板に実装してなる高周波モジュール内の高周波信
号の伝送損失を低減する。 【解決手段】第1の誘電体基板11の表面に被着形成さ
れ、少なくとも一対の接続端子13a、13bを具備す
る第1の高周波線路12a、12b、12cとを具備す
る回路基板Bと、第2の誘電体基板1表面に搭載された
高周波素子2と、第2の誘電体基板1に形成され、高周
波素子2と接続され、端部に外部回路と接続するための
接続端子6a,6bが設けられた第2の高周波線路4
a、5aと、を有する高周波素子パッケージAとを具備
し、回路基板Bの表面に高周波素子パッケージAを実装
してなり、モジュール内の全高周波回路長をL1、回路
基板上の全高周波回路長をL2とした時、L2/L1
0.5以下とする。
(57) Abstract: A transmission loss of a high-frequency signal in a high-frequency module in which a high-frequency element package containing a high-frequency element is mounted on a circuit board is reduced. A circuit board B is formed on a surface of a first dielectric substrate 11 and includes first high-frequency lines 12a, 12b and 12c having at least a pair of connection terminals 13a and 13b. And a connection terminal 6a, 6b formed on the second dielectric substrate 1, connected to the high-frequency element 2, and connected to an external circuit at an end. Second high-frequency line 4 provided
a, comprising a high-frequency device package A having a 5a, and it implements a high-frequency device package A to the surface of the circuit board B, and the total high-frequency circuit length in the module L 1, all high frequency circuit on the circuit board when the length was L 2, the L 2 / L 1 is 0.5 or less.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】 本発明は、マイクロ波やミ
リ波の信号が伝送され、回路基板表面に高周波素子を搭
載したパッケージを実装してなる高周波モジュールの改
良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a high-frequency module in which a microwave or millimeter-wave signal is transmitted and a package having a high-frequency element mounted on a circuit board surface is mounted.

【0002】[0002]

【従来技術】 近年、高度情報化時代を迎え、情報伝達
に用いられる電波は1〜30GHzのマイクロ波領域か
ら、更に30〜300GHzのミリ波領域の周波数まで
活用することが検討されており、例えば、車間レーダー
のようなミリ波の電波を用いた応用システムも提案され
るようになっている。
2. Description of the Related Art In recent years, in the era of advanced information, the use of radio waves used for information transmission from the microwave range of 1 to 30 GHz to the millimeter wave range of 30 to 300 GHz has been studied. Application systems using millimeter wave radio waves, such as inter-vehicle radars, have also been proposed.

【0003】このような高周波用のシステムにおいて
は、従来、1つの回路基板の表面にすべての高周波素子
を搭載収納し、高周波素子を蓋体などによって一括して
気密封止するマルチチップモジュールが知られている。
In such a high-frequency system, a multi-chip module in which all high-frequency elements are mounted and housed on the surface of a single circuit board and the high-frequency elements are collectively hermetically sealed with a lid or the like is known. Have been.

【0004】図3は、マルチチップモジュールの概略断
面図である。図3によれば、マルチチップモジュール3
1は配線基板32、枠体33、蓋体34とその内部の複
数の高周波素子35からなっている。それぞれの高周波
素子35は配線基板32表面に形成された高周波線路3
6とワイヤーボンディングによって接続されている。
FIG. 3 is a schematic sectional view of a multi-chip module. According to FIG. 3, the multi-chip module 3
Reference numeral 1 denotes a wiring board 32, a frame 33, a lid 34, and a plurality of high-frequency elements 35 therein. Each of the high-frequency elements 35 is a high-frequency line 3 formed on the surface of the wiring board 32.
6 and wire bonding.

【0005】このようなマルチチップモジュールにおい
ては、複数の高周波素子を1つの基板の表面に搭載する
ために、高周波素子搭載基板全体のサイズが大きくなっ
てしまい、その結果、モジュールの反りや、枠体、蓋体
の変形等により気密封止の歩留まりに問題があった。
In such a multi-chip module, since a plurality of high-frequency devices are mounted on the surface of one substrate, the size of the entire high-frequency device mounting substrate increases, and as a result, module warpage and frame There was a problem in the yield of hermetic sealing due to deformation of the body and lid.

【0006】このような問題を解消するために、複数の
高周波素子を独立した複数のパッケージ内に気密に収納
し、その複数のパッケージを回路基板に実装してモジュ
ールを構成することが考えられる。
In order to solve such a problem, it is conceivable that a plurality of high-frequency elements are hermetically housed in a plurality of independent packages, and the plurality of packages are mounted on a circuit board to form a module.

【0007】[0007]

【発明が解決しようとする課題】 しかしながら、高周
波素子を個別にパッケージに収納し、それを回路基板に
実装してなるモジュールの場合、信号周波数が10GH
z以上の高周波になると、パッケージと回路基板との接
続部において信号の伝送損失が大きくなり、またパッケ
ージ同士の接続に回路基板を経由するためにその線路部
の損失も加算されてしまい、高周波信号の損失がさらに
大きくなるために、回路が十分に動作し得ないと考えら
れていた。
However, in the case of a module in which high-frequency elements are individually housed in a package and mounted on a circuit board, the signal frequency is 10 GHz.
If the frequency is higher than z, the signal transmission loss increases at the connection between the package and the circuit board, and the loss of the line portion is added because the connection between the packages passes through the circuit board. It was thought that the circuit could not operate satisfactorily because the loss of the circuit became larger.

【0008】従って、本発明は、高周波素子を収納した
高周波素子パッケージを回路基板に実装してなる高周波
モジュール内の高周波信号の伝送損失を低減した高周波
モジュールを提供することを目的とするものである。
Accordingly, it is an object of the present invention to provide a high-frequency module in which a high-frequency element package containing a high-frequency element is mounted on a circuit board to reduce the transmission loss of a high-frequency signal in a high-frequency module. .

【0009】[0009]

【課題を解決するための手段】 本発明者等は、前記課
題に鑑み、高周波素子をパッケージに収納し、それを回
路基板に実装してなる高周波モジュール構造について検
討を重ねた結果、回路基板上の高周波線路の長さを、パ
ッケージを実装した時のモジュール全体の高周波線路の
長さに対して特定の関係を満足するように回路設計する
ことによってモジュール全体における信号の伝送損失を
低減するに至った。
Means for Solving the Problems In view of the problems described above, the present inventors have repeatedly studied a high-frequency module structure in which a high-frequency element is housed in a package and mounted on a circuit board. By designing the circuit so that the length of the high-frequency line of the module satisfies a specific relationship with the length of the high-frequency line of the entire module when the package is mounted, it has been possible to reduce signal transmission loss in the entire module. Was.

【0010】即ち、本発明の高周波モジュールは、第1
の誘電体基板と、該第1の誘電体基板の表面に被着形成
され、少なくとも一対の接続端子を具備する第1の高周
波線路とを具備する回路基板と、第2の誘電体基板と、
該第2の誘電体基板表面に搭載された高周波素子と、前
記第2の誘電体基板に形成され、前記高周波素子と接続
されてなる第2の高周波線路と、外部回路と接続するた
めに設けられた接続端子とを有する複数の高周波素子パ
ッケージとを具備し、前記複数の高周波素子パッケージ
を前記回路基板の表面に実装してなる高周波モジュール
であって、前記モジュール内の全高周波回路長をL1
前記回路基板内の全高周波回路長をL2とした時、L2
1で表される長さ比が0.5以下であることを特徴と
する。
That is, the high-frequency module of the present invention has a first
A circuit board comprising: a first dielectric substrate; a first high-frequency line having at least one pair of connection terminals; and a second dielectric substrate.
A high-frequency element mounted on the surface of the second dielectric substrate, a second high-frequency line formed on the second dielectric substrate and connected to the high-frequency element, and provided for connection to an external circuit. And a plurality of high-frequency element packages having connection terminals provided thereon, wherein the plurality of high-frequency element packages are mounted on the surface of the circuit board, and the total high-frequency circuit length in the module is L. 1 ,
When the total high-frequency circuit length in the circuit board is L 2 , L 2 /
Length ratio represented by L 1 is equal to or more than 0.5.

【0011】なお、前記回路基板における第1の誘電体
基板が有機樹脂含有絶縁材料からなり、パッケージにお
ける第2の誘電体基板が、セラミックスからなることが
望ましく、さらに、前記第2の誘電体基板の誘電損失が
前記第1の誘電体基板よりも小さいことが望ましい。
Preferably, the first dielectric substrate in the circuit board is made of an organic resin-containing insulating material, and the second dielectric substrate in the package is made of ceramics. Is preferably smaller than that of the first dielectric substrate.

【0012】さらに、本発明の他の態様としては、第3
の誘電体基板と、該第3の誘電体基板に形成された第3
の高周波線路と、外部回路と接続するために設けられた
接続端子とを有する配線基板と、をさらに具備し、パッ
ケージとともに回路基板表面に実装されることを特徴と
するものであり、かかる場合においても、前記L2/L1
で表される長さ比が0.5以下である関係を具備するこ
とを特徴とするものである。
Further, as another embodiment of the present invention, the third aspect
And a third dielectric substrate formed on the third dielectric substrate.
A high-frequency line and a wiring board having a connection terminal provided for connection to an external circuit, further comprising a package mounted on the surface of the circuit board together with the package. also, the L 2 / L 1
Is characterized by having a relationship in which the length ratio represented by is 0.5 or less.

【0013】そして、配線基板を具備する場合において
も、この配線基板における第3の誘電体基板の誘電損失
が第1の誘電体基板よりも小さいことが望ましい。
[0013] Even when a wiring substrate is provided, it is desirable that the dielectric loss of the third dielectric substrate in this wiring substrate be smaller than that of the first dielectric substrate.

【0014】なお、上記の高周波モジュールは、いずれ
も前記高周波線路に周波数10GHz以上の高周波信号
が伝送される場合特に好適である。
Each of the above high-frequency modules is particularly suitable when a high-frequency signal having a frequency of 10 GHz or more is transmitted to the high-frequency line.

【0015】[0015]

【作用】 本発明によれば、複数の高周波素子を回路基
板上に搭載させたモジュールを構成する場合、1個ある
いは複数個の高周波素子を複数のパッケージに別けて気
密に封止させて、回路基板上に実装することによって、
従来のように複数の高周波素子を1つのパッケージ内に
気密封止する場合に比較して気密封止の信頼性を高める
ことができる。
According to the present invention, when configuring a module in which a plurality of high-frequency elements are mounted on a circuit board, one or more high-frequency elements are separated into a plurality of packages and hermetically sealed. By mounting on the board,
The reliability of hermetic sealing can be improved as compared with the case where a plurality of high-frequency elements are hermetically sealed in one package as in the related art.

【0016】また、本発明によれば、高周波モジュール
の全高周波回路長L1に対して、回路基板の全高周波回
路長L2のL2/L1の長さ比を0.5以下とすることに
よって、従来のマルチチップモジュールに比較して遜色
ない良好な伝送特性を得ることができる。
According to the present invention, the length ratio L 2 / L 1 of the total high-frequency circuit length L 2 of the circuit board to the total high-frequency circuit length L 1 of the high-frequency module is set to 0.5 or less. As a result, it is possible to obtain good transmission characteristics comparable to those of the conventional multi-chip module.

【0017】また、回路基板がパッケージに対して大型
で、上記のような回路長の関係を形成することが難しい
場合には、別途、回路基板の誘電体基板よりも低損失の
誘電体材料からなる誘電体基板に高周波線路が形成され
た配線基板を回路基板上の高周波線路間に実装して、高
周波信号をこの配線基板の高周波線路にバイパスするこ
とによって、低誘電損失の誘電体基板に形成された線路
長を長くすることができる結果、回路基板のサイズに係
わらず、線路長を上記の範囲に制御することが可能とな
る。
In the case where the circuit board is large relative to the package and it is difficult to form the above relationship of the circuit length, a dielectric material having a lower loss than the dielectric substrate of the circuit board is separately provided. A high-frequency line is formed on a dielectric substrate, and a high-frequency signal is mounted on the high-frequency line on the circuit board, and a high-frequency signal is bypassed to the high-frequency line on the wiring substrate to form a low-dielectric-loss dielectric substrate. As a result, it is possible to control the line length within the above range regardless of the size of the circuit board.

【0018】[0018]

【発明の実施の形態】 以下、本発明の高周波モジュー
ルを図面に基づき詳述する。
Hereinafter, a high-frequency module according to the present invention will be described in detail with reference to the drawings.

【0019】図1は、本発明の高周波モジュールの一例
を説明するための概略断面図である。図1の高周波モジ
ュールは、基本的に高周波素子パッケージAと回路基板
Bによって構成されている。 (高周波素子パッケージA)高周波素子パッケージAに
よれば、誘電体基板1の表面には、高周波素子2がとも
に搭載されており、蓋体3によって気密に封止されてい
る。また誘電体基板1表面には入力用高周波線路4aと
出力用高周波線路4bが形成されており、各線路4a、
4bの一方の端部は、それぞれ高周波素子2と接続され
ている。また、各線路4a、4bの他方の端部は、誘電
体基板1を貫通して形成されたスルーホール導体5a、
5bを経由して、誘電体基板1の裏面に導出され、誘電
体基板1の裏面に形成された外部回路と接続するための
接続端子6a、6bとが接続されている。また、誘電体
基板1内部には、グランド層7が形成されており、各線
路4a、4bはグランド層7とともにマイクロストリッ
プ線路型の高周波線路を形成している。なお、内部のグ
ランド層7のスルーホール導体5a、5b部には開口8
が形成されており、スルーホール導体5a、5bとは電
気的に非接触となっている。
FIG. 1 is a schematic sectional view for explaining one example of the high-frequency module of the present invention. The high-frequency module of FIG. 1 basically includes a high-frequency element package A and a circuit board B. (High-frequency Element Package A) According to the high-frequency element package A, the high-frequency element 2 is mounted on the surface of the dielectric substrate 1 and hermetically sealed by the lid 3. An input high-frequency line 4a and an output high-frequency line 4b are formed on the surface of the dielectric substrate 1, and each line 4a,
One end of 4b is connected to the high-frequency element 2 respectively. The other ends of the lines 4a and 4b are connected to through-hole conductors 5a formed through the dielectric substrate 1, respectively.
Via 5b, connection terminals 6a and 6b led out to the back surface of the dielectric substrate 1 and connected to an external circuit formed on the back surface of the dielectric substrate 1 are connected. A ground layer 7 is formed inside the dielectric substrate 1, and each of the lines 4a and 4b together with the ground layer 7 forms a microstrip line type high-frequency line. An opening 8 is formed in the through-hole conductors 5a and 5b of the internal ground layer 7.
Are formed, and are not electrically in contact with the through-hole conductors 5a and 5b.

【0020】なお、図1の高周波モジュールにおいて
は、上記の構造からなる2つの高周波素子パッケージA
1、A2を具備するものである。 (高周波素子パッケージの他の構造について)図1の高
周波素子パッケージAでは、垂直方向への信号の伝達に
あたってスルーホール導体5を用いているが、この部分
には、例えば、グランド層7にスロットを形成し、この
スロットを介して、第1の誘電体基板表面に形成した線
路と、裏面に形成した線路とを対峙させた周知の構造に
よって電磁結合させることもできる。前記のスルーホー
ル導体や電磁結合を用いて高周波信号を基板に垂直に伝
送させるパッケージの回路基板への搭載方法は図1に示
した方法以外に、パッケージを逆さまにして、それを凹
部を設けた回路基板の凹部にパッケージを載置してパッ
ケージの接続端子と回路基板の接続端子をほぼ同一面に
なるようにして、ワイヤーボンディング等でそれぞれの
接続端子を接続することもできる。
In the high-frequency module shown in FIG. 1, two high-frequency element packages A having the above-described structures are provided.
1, A2. (Regarding Other Structure of High-Frequency Element Package) In the high-frequency element package A of FIG. 1, through-hole conductors 5 are used for transmitting signals in the vertical direction. The line formed on the surface of the first dielectric substrate and the line formed on the back surface can be electromagnetically coupled via the slot by a well-known structure in which the line formed on the back surface is opposed to the line formed on the back surface. The method of mounting a package for transmitting a high-frequency signal vertically to a substrate using the above-described through-hole conductor or electromagnetic coupling on a circuit board is different from the method shown in FIG. 1 in that the package is turned upside down and a recess is provided. It is also possible to place the package in the recess of the circuit board so that the connection terminal of the package and the connection terminal of the circuit board are substantially flush with each other, and connect the respective connection terminals by wire bonding or the like.

【0021】また、スルーホール導体5や電磁結合を用
いた基板に垂直な伝送を行わずに、パッケージ内部の高
周波線路を水平方向に伸ばし、パッケージ枠体を貫通さ
せて気密を保ちながら高周波信号をパッケージ内部から
パッケージ外部に導出するパッケージについても適用で
きる。このような場合には、回路基板に凹部を設け、そ
こにパッケージを載置してパッケージの接続端子と回路
基板の接続端子をほぼ同一面になるようにして、ワイヤ
ーボンディング等でそれぞれの接続端子を接続する。 (回路基板)一方、回路基板Bによれば、誘電体基板1
1の少なくとも表面には高周波線路12が被着形成され
ており、その高周波線路12には、前記パッケージAを
実装する領域が設けられており、高周波線路12は、パ
ッケージAの接続端子6a、6bの間隔で離間して形成
されている。即ち、回路基板Bの高周波線路は、12
a、12b、12cの3本の線路から構成されている。
なお、高周波線路12aおよび12cの端部には、さら
に高周波モジュールを他の回路と接続するための接続端
子13a、13bが設けられている。また、誘電体基板
11の内部には、グランド層14が形成されており、前
記高周波線路12a、12b、12cとともにマイクロ
ストリップ線路を形成している。なお、このグランド層
14は、誘電体基板11の裏面であってもよい。
Further, the high-frequency line inside the package is extended in the horizontal direction without transmitting vertically through the through-hole conductor 5 or the substrate using the electromagnetic coupling, and the high-frequency signal is transmitted while maintaining the airtightness through the package frame. The present invention can also be applied to a package derived from the inside of the package to the outside of the package. In such a case, a concave portion is provided on the circuit board, and the package is placed on the concave portion so that the connection terminal of the package and the connection terminal of the circuit board are substantially flush with each other. Connect. (Circuit Board) On the other hand, according to the circuit board B, the dielectric board 1
A high-frequency line 12 is formed on at least the surface of the package 1. The high-frequency line 12 is provided with a region for mounting the package A. The high-frequency line 12 is connected to the connection terminals 6a and 6b of the package A. Are formed at intervals. That is, the high-frequency line of the circuit board B is 12
a, 12b, and 12c.
In addition, connection terminals 13a and 13b for connecting the high-frequency module to other circuits are provided at the ends of the high-frequency lines 12a and 12c. A ground layer 14 is formed inside the dielectric substrate 11, and forms a microstrip line together with the high-frequency lines 12a, 12b, and 12c. Note that the ground layer 14 may be the back surface of the dielectric substrate 11.

【0022】上記パッケージAおよび回路基板Bにおい
て、高周波線路4a、4b、12a、12b、12cは
グランド層7、14とともに、マイクロストリップ線路
を形成しているものであるが、この線路4a、4b、1
2a、12b、12cの平面的にみた両側にグランド層
を形成した、いわゆるコプレーナ線路構造であってもよ
く、さらにこのコプレーナ線路構造に前記グランド層
7、14を付加したグランド付きコプレーナ線路構造で
あってもよい。 (実装構造)上記の回路基板Bの表面には、上記の2つ
のパッケージAが載置され、パッケージAの接続端子6
a、6bと回路基板Bの高周波線路12aと高周波線路
12b、あるいは高周波線路12bと高周波線路12c
の各端部と半田などの導電性接着剤15によって実装さ
れる。
In the package A and the circuit board B, the high-frequency lines 4a, 4b, 12a, 12b, and 12c form a microstrip line together with the ground layers 7 and 14. 1
A so-called coplanar line structure in which ground layers are formed on both sides in plan view of 2a, 12b, and 12c may be used. You may. (Mounting Structure) On the surface of the circuit board B, the two packages A are mounted, and the connection terminals 6 of the package A are mounted.
a, 6b and the high-frequency line 12a and the high-frequency line 12b of the circuit board B, or the high-frequency line 12b and the high-frequency line 12c
Are mounted with the conductive adhesive 15 such as a solder and each end.

【0023】かかる構造の高周波モジュールにおいて
は、電極13aから入力された信号は、高周波線路12
aを経由して高周波素子パッケージA1の接続端子6a
−スルーホール導体5aを含む高周波線路4a−高周波
素子2−スルーホール導体5bを含む高周波線路4b−
接続端子6bから出力され、さらに高周波線路12bを
経由して、前記と同様にパッケージA2内を伝送し、接
続端子6bから高周波線路12cを経由して接続端子1
3bから外部回路に接続される。
In the high-frequency module having such a structure, the signal input from the electrode 13a is
a of the connection terminal 6a of the high-frequency element package A1
-High-frequency line 4a including through-hole conductor 5a-High-frequency element 2-High-frequency line 4b including through-hole conductor 5b-
The signal is output from the connection terminal 6b, further transmitted through the package A2 via the high-frequency line 12b, and transmitted from the connection terminal 6b to the connection terminal 1 via the high-frequency line 12c.
3b is connected to an external circuit.

【0024】本発明によれば、上記の高周波モジュール
全体の高周波信号の伝送損失を低減するために、回路基
板B上の高周波線路長をできるだけ短くする。通常、回
路基板上の高周波線路は高周波信号をある位置から別の
位置まで伝送させるために存在するが、本発明では、回
路基板上でパッケージとパッケージを接続するための接
続パターンとして用いられる。具体的には、上記の高周
波モジュールにおける高周波信号が伝送される全回路
長、即ち、接続端子13aから接続端子13bまでの全
回路長をL1、回路基板上の全回路長、則ち、高周波線
路12a、高周波線路12b、高周波線路12cの各長
さの合計(L21+L22+L23)をL2としたとき、L2
1で表される比率が0.5以下、特に0.4以下、さ
らには0.2以下とすることが重要である。
According to the present invention, the length of the high-frequency line on the circuit board B is made as short as possible in order to reduce the transmission loss of the high-frequency signal of the entire high-frequency module. Normally, a high-frequency line on a circuit board exists for transmitting a high-frequency signal from one position to another position. In the present invention, the high-frequency line is used as a connection pattern for connecting the packages on the circuit board. Specifically, the total circuit length of the high-frequency module in which the high-frequency signal is transmitted, that is, the total circuit length from the connection terminal 13a to the connection terminal 13b is L 1 , the total circuit length on the circuit board, that is, the high-frequency When the sum of the lengths of the line 12a, the high-frequency line 12b, and the high-frequency line 12c (L 21 + L 22 + L 23 ) is L 2 , L 2 /
Ratio represented by L 1 is 0.5 or less, especially 0.4 or less, still more it is important to 0.2 or less.

【0025】即ち、モジュール内の高周波線路におい
て、信号処理に寄与しない回路基板上の高周波線路の距
離(長さ)をできるだけ短くすることが必要である。通
常、高周波素子パッケージは、素子を搭載し封止するた
めの必要最小限の大きさに設計され、これを更に小さく
することは困難である。回路基板上の高周波線路は高周
波信号を伝送させるだけなので、回路設計や部品レイア
ウトの工夫により短くできる可能性がある。高周波信号
が回路基板を伝送する長さをモジュール全体の高周波回
路長の0.5以下にするために、回路基板B側の高周波
線路を伝送線路としてではなく、むしろパッケージとパ
ッケージを接続するための接続パターンとして使用する
ことにより、モジュール全体における高周波信号伝送の
損失を低減することができる。
That is, in the high-frequency line in the module, it is necessary to minimize the distance (length) of the high-frequency line on the circuit board which does not contribute to signal processing. Usually, the high-frequency element package is designed to have a minimum size required for mounting and sealing the element, and it is difficult to further reduce the size. Since the high-frequency line on the circuit board only transmits high-frequency signals, there is a possibility that the length can be shortened by devising circuit design and component layout. In order to make the length of the high-frequency signal transmitted on the circuit board 0.5 or less of the high-frequency circuit length of the entire module, the high-frequency line on the circuit board B side is not used as a transmission line, but rather for connecting the packages. By using it as a connection pattern, loss of high-frequency signal transmission in the entire module can be reduced.

【0026】高周波素子パッケージAの誘電体基板およ
び回路基板Bの誘電体基板を形成する材料としては、ア
ルミナ、AlN、Si34、ムライトなどを主成分とす
るセラミック材料、ガラス材料、ガラスセラミック材
料、エポキシ樹脂、ポリイミド樹脂、テフロンなどのフ
ッ素系樹脂などの有機樹脂系材料、有機樹脂−セラミッ
ク複合系材料などが用いられる。
As a material for forming the dielectric substrate of the high-frequency element package A and the dielectric substrate of the circuit board B, a ceramic material containing alumina, AlN, Si 3 N 4 , mullite, etc. as a main component, a glass material, a glass ceramic A material, an organic resin material such as an epoxy resin, a polyimide resin, a fluorine resin such as Teflon, or an organic resin-ceramic composite material is used.

【0027】高周波素子パッケージの誘電体基板として
は、誘電損失が小さいとともに、気密封止が可能である
ことが好適である。特に望ましい誘電体材料としては、
アルミナ、AlN、ガラスセラミックス等の無機材料が
挙げられる。
It is preferable that the dielectric substrate of the high-frequency element package has a small dielectric loss and can be hermetically sealed. Particularly desirable dielectric materials include:
Examples include inorganic materials such as alumina, AlN, and glass ceramics.

【0028】また、回路基板の誘電体基板としては、誘
電損失が小さいとともに低価格であることが好適であ
る。特に望ましい誘電体材料としては、ガラス−フッ素
樹脂、ガラス−エポキシ樹脂等の有機樹脂含有絶縁材料
が挙げられる。
It is preferable that the dielectric substrate of the circuit board has low dielectric loss and is inexpensive. Particularly desirable dielectric materials include insulating materials containing organic resin such as glass-fluorine resin and glass-epoxy resin.

【0029】最も好適な組み合わせとして、高周波素子
パッケージの誘電体基板が、アルミナからなり、回路基
板の誘電体基板がガラス−エポキシ樹脂からなることが
性能とコストの面から望ましい。
As the most preferable combination, it is desirable from the viewpoint of performance and cost that the dielectric substrate of the high-frequency device package is made of alumina and the dielectric substrate of the circuit board is made of glass-epoxy resin.

【0030】なお、高周波モジュール上の高周波回路長
において、高周波素子内の回路網については、実質無視
し、高周波素子内の回路長は、素子の高周波線路と接続
される電極間の距離とみなす。また、高周波素子パッケ
ージと回路基板との境界部は、接続部における中心位置
とする。
In the high-frequency circuit length on the high-frequency module, the circuit network in the high-frequency element is substantially ignored, and the circuit length in the high-frequency element is regarded as the distance between the electrodes connected to the high-frequency line of the element. The boundary between the high-frequency element package and the circuit board is located at the center of the connection.

【0031】本発明の高周波モジュールにおいて、図1
で説明した高周波モジュールは、回路基板の大きさが小
さく、パッケージのみで前記回路長の比率を満足するこ
とができるが、回路設計の上で、回路基板のサイズが高
周波素子パッケージのサイズよりも非常に大きい場合、
高周波素子パッケージ内の高周波回路長のみでは、前記
の回路長の比率を満足させることが難しい。
In the high-frequency module of the present invention, FIG.
In the high-frequency module described in the above, the size of the circuit board is small, and the ratio of the circuit length can be satisfied only with the package, but the size of the circuit board is much larger than the size of the high-frequency element package in circuit design. If large,
It is difficult to satisfy the above-described ratio of the circuit lengths only with the high-frequency circuit length in the high-frequency element package.

【0032】かかるような場合、図2に示すように、回
路基板Bの表面に高周波パッケージA以外に、配線基板
Cを回路基板Bの表面に実装する。この配線基板Cは、
回路基板Bの誘電体基板よりも低い誘電損失の誘電体材
料からなる誘電体基板20とその表面に形成された高周
波線路21とを具備する。また、高周波線路21の両端
には、接続端子22がそれぞれ設けられている。
In such a case, a wiring board C is mounted on the surface of the circuit board B in addition to the high-frequency package A on the surface of the circuit board B as shown in FIG. This wiring board C
The circuit board B includes a dielectric substrate 20 made of a dielectric material having a lower dielectric loss than the dielectric substrate, and a high-frequency line 21 formed on the surface thereof. At both ends of the high-frequency line 21, connection terminals 22 are provided, respectively.

【0033】そして、この配線基板Cを回路基板Bの表
面にて所定間隔をもって形成されたの高周波線路23に
対して、高周波線路21形成面が回路基板B側に対向す
るように載置し、回路基板Bの高周波線路23と配線基
板Cの接続端子22とを半田などの導電性接着剤によっ
て接続する。
Then, the wiring board C is placed on the high-frequency line 23 formed at a predetermined interval on the surface of the circuit board B such that the surface on which the high-frequency line 21 is formed faces the circuit board B, The high-frequency line 23 of the circuit board B and the connection terminal 22 of the wiring board C are connected by a conductive adhesive such as solder.

【0034】かかる構成によって、回路基板B上を伝送
された信号は、配線基板C実装部分で、配線基板C側の
高周波線路21にバイパスされることになる。この配線
基板Cの誘電体基板20の誘電損失は回路基板の誘電体
基板25よりも低いために配線基板C側の高周波線路を
伝送させることによって、信号の減衰を低減することが
可能となる。
With this configuration, the signal transmitted on the circuit board B is bypassed to the high-frequency line 21 on the wiring board C side at the wiring board C mounting portion. Since the dielectric loss of the dielectric substrate 20 of the wiring board C is lower than that of the dielectric substrate 25 of the circuit board, the signal attenuation can be reduced by transmitting the high frequency line on the wiring board C side.

【0035】また、このような構成において、高周波モ
ジュール内の全高周波回路長をL1、回路基板B上の全
高周波回路長(L21+L22+L23+L24)をL2とした
時、L2/L1が0.5以下、特に0.4以下、さらに
0.2以下となるように調整することが可能となる。
In this configuration, when the total high-frequency circuit length in the high-frequency module is L 1 and the total high-frequency circuit length (L 21 + L 22 + L 23 + L 24 ) on the circuit board B is L 2 , 2 / L 1 can be adjusted to be 0.5 or less, particularly 0.4 or less, and further 0.2 or less.

【0036】このように配線基板Cを用いることによっ
て回路基板Bのサイズが大きい場合においても、上記の
高周波回路長の比率を0.5以下に容易に調整すること
が可能となる。
By using the wiring board C in this way, even when the size of the circuit board B is large, the ratio of the high-frequency circuit length can be easily adjusted to 0.5 or less.

【0037】なお、この図2においては、配線基板Cの
高周波線路21は、誘電体基板20の表面に被着形成さ
れた単なる線路によって形成したが、この配線基板Cに
おいては、もちろん誘電体基板の表面、裏面および内部
に所定の高周波回路を形成してもよい。
In FIG. 2, the high-frequency line 21 of the wiring board C is formed by a mere line formed on the surface of the dielectric substrate 20. A predetermined high-frequency circuit may be formed on the front surface, the back surface, and inside.

【0038】なお、上記の図1および図2に示した高周
波モジュールにおいては、説明の便宜上、高周波回路が
一本の線路によって形成された場合について説明した
が、この高周波回路は、当然2本以上の高周波線路によ
って構成されていてもよく、その場合においてもそれら
2本以上の高周波線路の合計長が全高周波回路長とな
る。但し、回路基板や高周波素子パッケージ内の電源、
制御信号、中間周波信号などの信号が伝送される回路に
ついては高周波回路から除外する。即ち、本発明の高周
波回路とは、搬送波近傍の周波数の信号が伝送する回路
を意味するものである。
In the high-frequency module shown in FIGS. 1 and 2, the case where the high-frequency circuit is formed by a single line has been described for convenience of explanation. And the total length of the two or more high-frequency lines is the total high-frequency circuit length. However, the power supply in the circuit board or high-frequency element package,
Circuits to which signals such as control signals and intermediate frequency signals are transmitted are excluded from high frequency circuits. That is, the high-frequency circuit according to the present invention means a circuit that transmits a signal having a frequency near the carrier wave.

【0039】[0039]

【実施例】本発明の効果を確認すべく、以下の実験を行
なった。まず、10GHzにおける誘電正接が0.00
06のアルミナセラミックスを用いて誘電体基板を作製
し、さらに誘電体基板の表面および裏面に導体材料とし
てタングステンを用いてマイクロストリップ線路を形成
し、表面および裏面のマイクロストリップ線路の端部を
スルーホール導体によって接続し、図1で示したような
高周波素子パッケージAの評価用サンプルを作製した。
評価用サンプルは、図1の高周波素子を搭載する凹部は
形成せず、入力端子と出力端子をパッケージ内で直接タ
ングステンメタライズで接続し、金属からなる蓋体を誘
電体基板の枠体表面に接着し、気密に封止した2つの評
価用サンプルを作製した。
EXAMPLES The following experiments were conducted to confirm the effects of the present invention. First, the dielectric loss tangent at 10 GHz is 0.00
In addition, a dielectric substrate is manufactured using alumina ceramics of No. 06, a microstrip line is formed on the front and back surfaces of the dielectric substrate using tungsten as a conductor material, and the ends of the microstrip lines on the front and back surfaces are formed with through holes. They were connected by a conductor, and an evaluation sample of the high-frequency element package A as shown in FIG. 1 was produced.
In the evaluation sample, the input terminal and the output terminal were directly connected in the package by tungsten metallization without forming the recess for mounting the high-frequency element of FIG. 1, and the metal lid was adhered to the surface of the dielectric substrate frame. Then, two airtightly sealed evaluation samples were prepared.

【0040】一方、10GHzにおける誘電正接が0.
05であるガラス織布にエポキシ樹脂を含浸した複合材
料を用いて誘電体基板を作製し、さらにその表面に導体
材料として銅を用いてマイクロストリップ線路を形成
し、図1に示した構造の回路基板Bを作製した。なお、
回路基板のマイクロストリップ線路を引回し、回路基板
における高周波線路長が異なる数種の回路基板を準備し
た。
On the other hand, the dielectric loss tangent at 10 GHz is 0.
A dielectric substrate was fabricated using a composite material of glass woven fabric 05 impregnated with epoxy resin, and a microstrip line was formed on the surface using copper as a conductor material. Substrate B was produced. In addition,
The microstrip line of the circuit board was routed, and several types of circuit boards having different high-frequency line lengths on the circuit board were prepared.

【0041】さらに、配線基板として、10GHzにお
ける誘電正接が0.0006であるアルミナを用いて誘
電体基板を形成し、その誘電体基板表面に導体材料とし
てタングステンを用いてコプレーナ線路を形成し、図2
に示した構造の配線基板Cを作製した。
Further, a dielectric substrate is formed using alumina having a dielectric tangent of 0.0006 at 10 GHz as a wiring substrate, and a coplanar line is formed on the surface of the dielectric substrate using tungsten as a conductor material. 2
The wiring board C having the structure shown in FIG.

【0042】そして、上記の評価用サンプルと配線基板
を回路基板の表面に半田を用いて実装した。
Then, the evaluation sample and the wiring board were mounted on the surface of the circuit board by using solder.

【0043】なお、各モジュールにおける全高周波回路
長L1と回路基板上の全高周波回路長L2とのL2/L1
を表に示した。
Incidentally, the L 2 / L 1 ratio between the total high-frequency circuit length L 2 of the total high-frequency circuit length L 1 and the circuit board in each module are shown in Table.

【0044】そして、高周波モジュールにおける回路基
板の端部に形成された接続端子間における周波数1GH
z、10GHzの高周波信号の伝送損失を評価し、その
結果を表1に示した。
The frequency of 1 GHz between the connection terminals formed at the end of the circuit board in the high-frequency module
The transmission loss of a high frequency signal of 10 GHz was evaluated, and the results are shown in Table 1.

【0045】[0045]

【表1】 [Table 1]

【0046】表1の結果によれば、周波数が1GHzと
低周波の場合には、いずれの場合においても損失はすべ
て0.5dB以下で問題とならないが、周波数が10G
Hzと高周波になると、比較品では損失が2dBを超
え、回路動作上問題になる場合が出てくる。本発明に基
づき、L2/L1比が0.5以下、特に0.2以下とする
ことによって、損失は2dB以下となり優れた伝送特性
を示した。
According to the results shown in Table 1, when the frequency is 1 GHz and the low frequency, in any case, the loss is 0.5 dB or less and no problem occurs.
When the frequency becomes high as Hz, the loss of the comparative product exceeds 2 dB, which may cause a problem in circuit operation. According to the present invention, when the ratio L 2 / L 1 is 0.5 or less, particularly 0.2 or less, the loss is 2 dB or less, and excellent transmission characteristics are exhibited.

【0047】[0047]

【発明の効果】 以上詳述した通り、本発明の高周波モ
ジュールによれば、回路基板上の全高周波回路の長さを
モジュールの全高周波回路長の1/2以下に設定するこ
とによって、高周波素子を個別にパッケージ化した場合
においても、モジュール全体としての高周波信号の損失
を低減することができる。
As described above in detail, according to the high-frequency module of the present invention, by setting the length of the entire high-frequency circuit on the circuit board to 以下 or less of the total high-frequency circuit length of the module, Are individually packaged, it is possible to reduce the loss of the high-frequency signal as the whole module.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の高周波モジュールの一例を説明するた
めの概略断面図である。
FIG. 1 is a schematic cross-sectional view for explaining an example of a high-frequency module according to the present invention.

【図2】本発明の高周波モジュールの他の例を説明する
ための概略断面図である。
FIG. 2 is a schematic sectional view for explaining another example of the high-frequency module of the present invention.

【図3】従来のマルチチップモジュールの構造を説明す
るための概略断面図である。
FIG. 3 is a schematic sectional view illustrating the structure of a conventional multichip module.

【符号の説明】[Explanation of symbols]

1 誘電体基板 2 高周波素子 3 蓋体 4 高周波線路 5 スルーホール導体 6 接続端子 7 グランド層 8 開口 A パッケージ B 回路基板 C 配線基板 REFERENCE SIGNS LIST 1 dielectric substrate 2 high-frequency element 3 lid 4 high-frequency line 5 through-hole conductor 6 connection terminal 7 ground layer 8 opening A package B circuit board C wiring board

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】第1の誘電体基板と、該第1の誘電体基板
の表面に被着形成され、少なくとも一対の接続端子を具
備する第1の高周波線路とを具備する回路基板と、第2
の誘電体基板と、該第2の誘電体基板表面に搭載された
高周波素子と、前記第2の誘電体基板に形成され、前記
高周波素子と接続されてなる第2の高周波線路と、外部
回路と接続するために設けられた接続端子とを有する複
数の高周波素子パッケージとを具備し、前記複数の高周
波素子パッケージを前記回路基板の表面に実装してなる
高周波モジュールであって、前記モジュール内の全高周
波回路長をL1、前記回路基板内の全高周波回路長をL2
とした時、L2/L1で表される長さ比が0.5以下であ
ることを特徴とする高周波モジュール。
A circuit board comprising: a first dielectric substrate; a first high-frequency line provided on a surface of the first dielectric substrate and having at least a pair of connection terminals; 2
A dielectric substrate, a high-frequency element mounted on the surface of the second dielectric substrate, a second high-frequency line formed on the second dielectric substrate and connected to the high-frequency element, and an external circuit. And a plurality of high-frequency element packages having connection terminals provided for connection with, a high-frequency module comprising a plurality of high-frequency element packages mounted on the surface of the circuit board, wherein the module The total high-frequency circuit length is L 1 and the total high-frequency circuit length in the circuit board is L 2
When a high frequency module length ratio expressed by L 2 / L 1 is equal to or more than 0.5.
【請求項2】前記第1の誘電体基板が有機樹脂含有絶縁
材料からなり、前記第2の誘電体基板が、セラミックス
からなることを特徴とする請求項1記載の高周波モジュ
ール。
2. The high-frequency module according to claim 1, wherein said first dielectric substrate is made of an organic resin-containing insulating material, and said second dielectric substrate is made of ceramics.
【請求項3】前記第2の誘電体基板の誘電損失が前記第
1の誘電体基板よりも小さいことを特徴とする請求項1
または請求項2記載の高周波モジュール。
3. The dielectric substrate according to claim 1, wherein the dielectric loss of said second dielectric substrate is smaller than that of said first dielectric substrate.
Or the high-frequency module according to claim 2.
【請求項4】前記高周波線路に周波数10GHz以上の
高周波信号が伝送される請求項1乃至請求項3のいずれ
か記載の高周波モジュール。
4. The high-frequency module according to claim 1, wherein a high-frequency signal having a frequency of 10 GHz or more is transmitted to said high-frequency line.
【請求項5】第1の誘電体基板と、該第1の誘電体基板
の表面に被着形成され、少なくとも一対の接続端子とを
具備する第1の高周波線路とを有する回路基板と、第2
の誘電体基板と、該第2の誘電体基板表面に搭載された
高周波素子と、前記第2の誘電体基板に形成され、前記
高周波素子と接続されてなる第2の高周波線路と、外部
回路と接続するために設けられた接続端子とを有する複
数の高周波素子パッケージと、第3の誘電体基板と、該
第3の誘電体基板に形成された第3の高周波線路と、外
部回路と接続するために設けられた接続端子とを有する
配線基板と、を具備し、前記回路基板の表面に、前記複
数の高周波素子パッケージおよび前記配線基板を実装し
てなる高周波モジュールであって、前記モジュール内の
全高周波回路長をL1、前記回路基板内の全高周波回路
長をL2とした時、L 2/L1で表される長さ比が0.5
以下であることを特徴とする高周波モジュール。
5. A first dielectric substrate, and said first dielectric substrate
Formed on the surface of at least one pair of connection terminals.
A circuit board having a first high-frequency line provided therein;
And a dielectric substrate mounted on the surface of the second dielectric substrate
A high-frequency element, formed on the second dielectric substrate,
A second high-frequency line connected to the high-frequency element;
Having a connection terminal provided for connection to a circuit;
A number of high-frequency element packages, a third dielectric substrate,
A third high-frequency line formed on the third dielectric substrate;
Connection terminals provided for connection with the external circuit
A wiring board; and
Mounting a number of high-frequency element packages and the wiring board
A high-frequency module comprising:
L for all high frequency circuits1All high frequency circuits in the circuit board
Length is LTwoAnd L Two/ L1The length ratio represented by is 0.5
A high-frequency module characterized by the following.
【請求項6】前記第1の誘電体基板が有機樹脂含有絶縁
材料からなり、前記第2の誘電体基板および前記第3の
誘電体基板が、セラミックスからなることを特徴とする
請求項5記載の高周波モジュール。
6. The semiconductor device according to claim 5, wherein said first dielectric substrate is made of an insulating material containing an organic resin, and said second dielectric substrate and said third dielectric substrate are made of ceramics. High frequency module.
【請求項7】前記第3の誘電体基板の誘電損失が前記第
1の誘電体基板よりも小さいことを特徴とする請求項5
または請求項6記載の高周波モジュール。
7. The semiconductor device according to claim 5, wherein a dielectric loss of said third dielectric substrate is smaller than that of said first dielectric substrate.
Or the high-frequency module according to claim 6.
【請求項8】前記高周波線路に周波数10GHz以上の
高周波信号が伝送される請求項5乃至請求項7のいずれ
か記載の高周波モジュール。
8. The high-frequency module according to claim 5, wherein a high-frequency signal having a frequency of 10 GHz or more is transmitted to said high-frequency line.
JP2000053999A 2000-02-29 2000-02-29 High frequency module Pending JP2001244409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000053999A JP2001244409A (en) 2000-02-29 2000-02-29 High frequency module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000053999A JP2001244409A (en) 2000-02-29 2000-02-29 High frequency module

Publications (1)

Publication Number Publication Date
JP2001244409A true JP2001244409A (en) 2001-09-07

Family

ID=18575311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000053999A Pending JP2001244409A (en) 2000-02-29 2000-02-29 High frequency module

Country Status (1)

Country Link
JP (1) JP2001244409A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010161416A (en) * 2010-04-07 2010-07-22 Hitachi Ltd Electronic device
JP2010192918A (en) * 2002-04-29 2010-09-02 Interconnect Portfolio Llc Direct-connect signaling system
JP2016163006A (en) * 2015-03-05 2016-09-05 株式会社東芝 Microwave semiconductor package and microwave semiconductor module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192918A (en) * 2002-04-29 2010-09-02 Interconnect Portfolio Llc Direct-connect signaling system
JP2010161416A (en) * 2010-04-07 2010-07-22 Hitachi Ltd Electronic device
JP2016163006A (en) * 2015-03-05 2016-09-05 株式会社東芝 Microwave semiconductor package and microwave semiconductor module

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