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JP2001334461A - Polishing device - Google Patents

Polishing device

Info

Publication number
JP2001334461A
JP2001334461A JP2000157006A JP2000157006A JP2001334461A JP 2001334461 A JP2001334461 A JP 2001334461A JP 2000157006 A JP2000157006 A JP 2000157006A JP 2000157006 A JP2000157006 A JP 2000157006A JP 2001334461 A JP2001334461 A JP 2001334461A
Authority
JP
Japan
Prior art keywords
polishing
polished
amount
dressing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000157006A
Other languages
Japanese (ja)
Other versions
JP2001334461A5 (en
Inventor
Naoki Nomichi
直樹 野路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2000157006A priority Critical patent/JP2001334461A/en
Publication of JP2001334461A publication Critical patent/JP2001334461A/en
Publication of JP2001334461A5 publication Critical patent/JP2001334461A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a polishing device measuring a polishing quantity of a polishing surface during polishing a substrate to be polished or dressing the polishing surface without dispersing pollution by the polishing quantity measuring of the polishing surface and to appropriately decide a replacement timing of the polishing face component material. SOLUTION: This polishing device urges the substrate 5 to be polished held by a top ring 4 to the polishing face of a polishing pad 2 of a turn table 1 and polishes the substrate to be polished by the relative movement between the polishing pad 2 and the substrate 5 to be polished and dresses the polishing surface by a dresser. The rotary shaft 6 of the top ring 4 or the rotary shaft of the dresser is provided with a target 7 for measuring the polishing surface polishing quantity, the displacement of the target 7 is measured, and the polishing quantity of the polishing face is detected by the measured displacement so that the dressing timing and the polishing pad replacement timing are decided.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体ウエハ等の基
板を研磨する研磨装置に関し、特にターンテーブルの研
磨面を構成する研磨パッドや砥石板(砥粒を含む研磨プ
レート)等の研磨部材の削れ量測定手段を備えた研磨装
置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus for polishing a substrate such as a semiconductor wafer, and more particularly to a polishing apparatus for polishing a polishing member such as a polishing pad or a grindstone plate (polishing plate containing abrasive grains) constituting a polishing surface of a turntable. The present invention relates to a polishing apparatus provided with an amount measuring means.

【0002】[0002]

【従来の技術】従来のこの種の研磨装置は、上面に研磨
パッドや砥石板等の研磨面を構成する研磨部材を設けた
ターンテーブルと、半導体ウエハ等の被研磨基板を保持
する基板保持機構と、該研磨部材の研磨面のドレッシン
グを行うドレッサー機構を具備している。そして研磨面
に基板保持機構で保持した被研磨基板を押圧し、該研磨
面と被研磨基板の相対運動により被研磨基板を平坦鏡面
に研磨すると共に、目づまりや経時変化等で研磨作用の
衰えた研磨面をドレッサー機構でドレッシングして目立
て等の再生・修整を行っている。
2. Description of the Related Art A conventional polishing apparatus of this type includes a turntable provided with a polishing member constituting a polishing surface such as a polishing pad or a grindstone plate on an upper surface, and a substrate holding mechanism for holding a substrate to be polished such as a semiconductor wafer. And a dresser mechanism for dressing the polishing surface of the polishing member. Then, the substrate to be polished held by the substrate holding mechanism is pressed against the polished surface, and the substrate to be polished is polished to a flat mirror surface by the relative movement between the polished surface and the substrate to be polished. The polished surface is dressed with a dresser mechanism to regenerate and modify dressing.

【0003】上記構成の研磨装置において、前記ドレッ
シングは研磨面を削って再生・修整を行うものであるか
ら、研磨部材の消耗を招くと共に、適正な時期に研磨面
のドレッシングを行わないと研磨効率が阻害されるとい
う問題がある。また、研磨部材の交換時期も適正に判断
する必要がある。そのためには研磨部材の研磨面の削れ
量を迅速、且つ精度よく検知する必要がある。
In the polishing apparatus having the above structure, the dressing is for regenerating and modifying the polished surface, so that the polishing member is consumed and the polishing efficiency is increased unless the polished surface is dressed at an appropriate time. Is hindered. In addition, it is necessary to appropriately determine the time to replace the polishing member. For that purpose, it is necessary to quickly and accurately detect the shaved amount of the polishing surface of the polishing member.

【0004】従来、上記研磨部材の研磨面の削れ量測定
は、研磨部材の研磨面に変位量測定センサを接触させて
測定している。ところが研磨部材の研磨面には砥液等が
供給されると共に、被研磨基板や研磨部材の削れかすが
存在するから、削れ量測定毎に汚染が拡散するという問
題がある。また、変位量測定センサを研磨面に接触さ
せ、研磨面を移動させながら測定するため測定に時間が
かかるという問題があった。
Conventionally, the measurement of the abrasion amount of the polished surface of the polishing member has been performed by bringing a displacement measuring sensor into contact with the polished surface of the polishing member. However, since the polishing liquid or the like is supplied to the polishing surface of the polishing member, and there is shavings of the substrate to be polished and the polishing member, there is a problem that contamination is diffused every time the shaving amount is measured. In addition, there is a problem that the measurement is time-consuming because the displacement measurement sensor is brought into contact with the polishing surface and the measurement is performed while moving the polishing surface.

【0005】[0005]

【発明が解決しようとする課題】本発明は上述の点に鑑
みてなされたもので、研磨面の削れ量測定による汚染の
拡散がなく、被研磨基板の研磨中又は研磨面のドレッシ
ング中に研磨部材の研磨面の削れ量測定ができ、ドレッ
シング時期の判定、研磨部材の交換時期の判定が適正に
できる研磨装置を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned circumstances, and there is no diffusion of contamination by measuring the amount of abrasion on a polished surface, and polishing is performed during polishing of a substrate to be polished or dressing of a polished surface. It is an object of the present invention to provide a polishing apparatus that can measure the amount of abrasion of a polished surface of a member, and can appropriately determine a dressing time and a replacement time of a polishing member.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
請求項1に記載の発明は、研磨面を構成する研磨部材を
有するターンテーブルと、被研磨基板を保持する基板保
持機構と、研磨部材の研磨面のドレッシングを行うドレ
ッサー機構を具備し、研磨面に基板保持機構で保持した
被研磨基板を押圧し、該研磨面と被研磨基板の相対運動
により被研磨基板を研磨すると共に、ドレッサーで研磨
面のドレッシングを行う研磨装置であって、基板保持機
構又はドレッサー機構の研磨面に非接触で該研磨部材の
削れ量に応じて位置が変位する部分にターゲットを設け
ると共に、該ターゲットの変位量を測定し、該測定した
変位量から研磨部材の削れ量を検知する研磨部材削れ量
検知手段を設けたことを特徴とする。
According to a first aspect of the present invention, there is provided a turntable having a polishing member constituting a polishing surface, a substrate holding mechanism for holding a substrate to be polished, and a polishing member. A dresser mechanism for dressing the polished surface is provided, the substrate to be polished held by the substrate holding mechanism is pressed against the polished surface, and the substrate to be polished is polished by the relative movement between the polished surface and the substrate to be polished. A polishing apparatus for dressing a polishing surface, wherein a target is provided at a portion whose position is displaced in accordance with an amount of shaving of the polishing member in a non-contact manner with a polishing surface of a substrate holding mechanism or a dresser mechanism, and a displacement amount of the target is provided. And a polishing member scraping amount detecting means for detecting a scraping amount of the polishing member from the measured displacement amount is provided.

【0007】上記のように研磨部材削れ量検知手段を設
け、基板保持機構又はドレッサー機構に設けたターゲッ
トの変位量から研磨部材の削れ量を検出するので、研磨
面の削れ量を被研磨基板の研磨中又は研磨面のドレッシ
ング中にリアルタイムで検知することができる。また、
研磨部材削れ量測定用のターゲットは研磨面に非接触で
該研磨面の削れ量に応じて位置が変位する部分に設ける
ので、上記従来のように研磨部材の研磨面の削れ量測定
毎に汚染が拡散するという問題はない。
[0007] As described above, the abrasive member scraping amount detecting means is provided, and the amount of scraping of the polishing member is detected from the amount of displacement of the target provided in the substrate holding mechanism or the dresser mechanism. It can be detected in real time during polishing or dressing of the polished surface. Also,
Since the target for measuring the abrading member abrasion amount is provided in a portion that is not in contact with the abrading surface and is displaced in accordance with the abrading amount of the abrading surface, contamination occurs each time the abrading amount of the abrading member of the abrading member is measured. There is no problem of diffusion.

【0008】請求項2に記載の発明は、請求項1に記載
の研磨装置において、研磨部材削れ量検知手段は、ター
ゲットの変位量を該ターゲットに非接触で測定する機能
を具備することを特徴とする。
According to a second aspect of the present invention, in the polishing apparatus of the first aspect, the polishing member scraping amount detecting means has a function of measuring a displacement amount of the target without contacting the target. And

【0009】上記のように研磨部材削れ量検知手段はタ
ーゲットに非接触でその変位量を測定する機能を具備す
るので、ターゲットを基板保持機構又はドレッサー機構
の回転部に設けても、固定側から容易に変位量を測定で
きる。
As described above, the polishing member scraping amount detecting means has a function of measuring the displacement amount of the target in a non-contact manner with the target. Therefore, even if the target is provided on the rotating portion of the substrate holding mechanism or the dresser mechanism, it can be fixed from the fixed side. The displacement can be easily measured.

【0010】請求項3に記載の発明は、請求項1又は2
に記載の研磨装置において、研磨部材削れ量検知手段
は、基板保持機構又はドレッサー機構の研磨面押圧力が
所定値以下の時に測定したターゲットの変位量から研磨
面削れ量を測定する機能を具備することを特徴とする。
[0010] The invention described in claim 3 is the invention according to claim 1 or 2.
Wherein the polishing member scraping amount detecting means has a function of measuring the polishing surface scraping amount from the displacement amount of the target measured when the polishing surface pressing force of the substrate holding mechanism or the dresser mechanism is equal to or less than a predetermined value. It is characterized by the following.

【0011】上記のように研磨部材削れ量検知手段は、
基板保持機構又はドレッサー機構の研磨面押圧力が所定
値以下の時に測定したターゲットの変位量から研磨部材
の研磨面削れ量を測定するので、研磨部材が弾性変形す
る材料からなる場合でも、弾性変形が少ない状態で研磨
面の削れ量を検知できる。
As described above, the abrasive member scraping amount detecting means is
Since the polishing surface scraping amount of the polishing member is measured from the displacement amount of the target measured when the polishing surface pressing force of the substrate holding mechanism or the dresser mechanism is equal to or less than a predetermined value, even when the polishing member is made of a material that elastically deforms, The amount of shaving on the polished surface can be detected in a state where there is little.

【0012】また、請求項4に記載の発明は、請求項1
又は2又は3に記載の研磨装置において、研磨部材削れ
量検知手段は、測定した基板保持機構又はドレッサー機
構に設けたターゲットの変位量から研磨面のドレッシン
グ時期を判定するドレッシング時期判定機能を具備する
ことを特徴とする。
The invention described in claim 4 is the first invention.
Alternatively, in the polishing apparatus described in 2 or 3, the polishing member scraping amount detecting means has a dressing timing determination function of determining a dressing timing of the polishing surface from the measured displacement of a target provided in the substrate holding mechanism or the dresser mechanism. It is characterized by the following.

【0013】上記のように研磨部材削れ量検知手段は、
測定した基板保持機構に設けたターゲットの変位量から
研磨部材の研磨面のドレッシング時期を判定するドレッ
シング時期判定機能を具備するので、適正な時期に研磨
面のドレッシングが実行でき、常に効率のよい研磨を実
施できると共に、研磨部材の消耗を少なくできる。
As described above, the abrasive member scraping amount detecting means is
A dressing time determination function for determining the dressing time of the polished surface of the polishing member from the measured displacement of the target provided on the substrate holding mechanism is provided, so that the dressing of the polished surface can be executed at an appropriate time, and always efficient polishing can be performed. And the consumption of the polishing member can be reduced.

【0014】また、請求項5に記載の発明は、請求項1
乃至4のいずれか1項に記載の研磨装置において、研磨
部材削れ量検知手段は、測定した基板保持機構又はドレ
ッサー機構に設けたターゲットの変位量から研磨部材の
交換時期を判定する研磨部材交換時期判定機能を具備す
るので、適正な時期に研磨部材の交換ができ、まだ使用
できる研磨部材を交換したり、交換時期が遅れて機器や
被研磨基板を損傷するということは無くなる。
The invention described in claim 5 is the first invention.
5. The polishing apparatus according to claim 1, wherein the polishing member scraping amount detecting means determines a polishing member replacement time based on the measured displacement of a target provided on the substrate holding mechanism or the dresser mechanism. Since the determination member is provided, it is possible to replace the polishing member at an appropriate time, and it is not necessary to replace a polishing member that can still be used, or to damage a device or a substrate to be polished by delaying the replacement time.

【0015】[0015]

【発明の実施の形態】以下、本発明の実施の形態例を図
面に基づいて説明する。図1は本発明に係る研磨装置の
構成例を示す図である。図1において、1はターンテー
ブルであり、該ターンテーブル1の上面には研磨パッド
2が貼り付けられ、ターンテーブル回転軸3により矢印
A方向に回転するようになっている。4は下端に半導体
ウエハ等の被研磨基板5を保持するトップリングであ
り、該トップリング4はトップリング回転軸6の下端に
取り付けられ、該トップリング回転軸6により矢印B方
向に回転するようになっている。トップリング4はトッ
プリングヘッド14に回転自在に支持され、該トップリ
ングヘッド14はシリンダ15で上下動するようになっ
ている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a configuration example of a polishing apparatus according to the present invention. In FIG. 1, reference numeral 1 denotes a turntable. A polishing pad 2 is attached to an upper surface of the turntable 1, and the turntable 1 is rotated in a direction of an arrow A by a turntable rotating shaft 3. Reference numeral 4 denotes a top ring for holding a substrate 5 to be polished such as a semiconductor wafer at the lower end. The top ring 4 is attached to a lower end of a top ring rotating shaft 6 so that the top ring 4 rotates in the direction of arrow B by the top ring rotating shaft 6. It has become. The top ring 4 is rotatably supported by a top ring head 14, and the top ring head 14 is vertically moved by a cylinder 15.

【0016】矢印B方向に回転するトップリング4の下
端に被研磨基板5を保持し、矢印A方向に回転するター
ンテーブル1の研磨パッド2の上面に押圧することによ
り、被研磨基板5と研磨パッド2の相対運動により被研
磨基板5の下面が平坦且つ鏡面状に研磨される。被研磨
基板5の研磨が所定枚数行われると研磨パッド2の研磨
面が磨耗及びドレッシングにより削られ、研磨パッド2
の研磨に寄与しない部分2aより、削れ量(変位量)d
だけ薄くなる。
The substrate 5 to be polished is held at the lower end of the top ring 4 rotating in the direction of arrow B, and pressed against the upper surface of the polishing pad 2 of the turntable 1 rotating in the direction of arrow A, thereby polishing the substrate 5 to be polished. The lower surface of the substrate 5 to be polished is polished flat and mirror-like by the relative movement of the pad 2. When a predetermined number of substrates to be polished are polished, the polished surface of the polishing pad 2 is scraped off by abrasion and dressing.
From the portion 2a that does not contribute to the polishing of the surface, the amount of shaving (displacement) d
Only thinner.

【0017】研磨パッド2は研磨により経時変化や目詰
まり等により研磨率が低下するから、所定のタイミング
でドレッシングを行い表面を削って、目立て等の再生・
修整を行う必要がある。このドレッシングにおいてはパ
ッド表面を削るのであるから、ドレッシングのタイミン
グが早すぎると研磨パッド2の消耗が激しく、研磨パッ
ド2を無駄に消耗することになる。また、ドレッシング
のタイミングが遅すぎると研磨率が低下し、被研磨基板
5の研磨効率が低下する。また、研磨パッド2の削れ量
dが所定以上進むと、研磨パッド2を新品と交換する必
要がある。上記ドレッシングを適正なタイミングで行う
ためにも、また研磨パッド2の交換タイミングを適正な
時期に行うためにも上記研磨パッド2の削れ量を迅速、
且つ精度よく測定する必要がある。
Since the polishing rate of the polishing pad 2 decreases due to aging or clogging due to polishing, the polishing pad 2 is dressed at a predetermined timing to scrape the surface to regenerate the dressing.
It needs to be modified. In this dressing, since the pad surface is shaved, if the timing of the dressing is too early, the polishing pad 2 is greatly consumed, and the polishing pad 2 is wasted. If the timing of the dressing is too late, the polishing rate decreases, and the polishing efficiency of the substrate 5 to be polished decreases. Further, when the shaving amount d of the polishing pad 2 advances by a predetermined amount or more, it is necessary to replace the polishing pad 2 with a new one. In order to perform the above-mentioned dressing at an appropriate timing, and also to perform the replacement timing of the polishing pad 2 at an appropriate time, the amount of shaving of the polishing pad 2 is quickly and rapidly reduced.
And it is necessary to measure accurately.

【0018】ここでは、トップリング回転軸6に円板状
のターゲット7を設けると共に、該ターゲット7の上下
方向の変位量を測定する変位計測ヘッド8を該ターゲッ
ト7に対向して設けている。変位計測ヘッド8はブラケ
ット16を介して装置枠体等の固定体17に固定されて
いる。該変位計測ヘッド8は例えばレーザ光を利用し、
非接触でターゲット7の上下方向の変位を検知する。変
位計測ヘッド8の出力は図2に示すように、変位計9に
送られ、ここでターゲット7の変位量Sdが算出され、
該算出された変位量がA/D変換器10でディジタル信
号Sd’に変換されコンピュータ11に送られる。該コ
ンピュータ11にはトップリング4が被研磨基板5を押
圧する押圧力信号P等が入力されている。また、コンピ
ュータ11のメモリ(図示せず)には1回のドレッシン
グを必要とする研磨面の変位量Δd、研磨パッド2の交
換を必要とする変位量D等が記憶されている。
Here, a disk-shaped target 7 is provided on the top ring rotating shaft 6, and a displacement measuring head 8 for measuring the amount of vertical displacement of the target 7 is provided facing the target 7. The displacement measuring head 8 is fixed to a fixed body 17 such as an apparatus frame via a bracket 16. The displacement measuring head 8 uses, for example, a laser beam,
The vertical displacement of the target 7 is detected without contact. The output of the displacement measuring head 8 is sent to a displacement meter 9 as shown in FIG. 2, where the displacement amount Sd of the target 7 is calculated,
The calculated displacement is converted into a digital signal Sd ′ by the A / D converter 10 and sent to the computer 11. The computer 11 receives a pressing force signal P and the like for pressing the top ring 4 against the substrate 5 to be polished. The memory (not shown) of the computer 11 stores a displacement amount Δd of the polishing surface that requires one dressing, a displacement amount D that requires replacement of the polishing pad 2, and the like.

【0019】コンピュータ11は測定された現在の研磨
パッド2の変位量dnから前回のドレッシング終了時の
変位量dn-1を減算し(dn−dn-1)、この値が前記変
位量Δdを超えたら(Δd≧dn−dn-1)、ドレッシン
グを実行する旨の信号S1を研磨装置の制御装置に出力
しドレッシングを実行する。また、現在の変位量dn
交換削れ量(変位量D)を超えたら(dn≧D)、研磨
パッド交換信号S2を出力する。
The computer 11 subtracts the displacement d n-1 at the end of the previous dressing from the measured displacement d n of the polishing pad 2 (d n -d n-1 ). When more than the amount Δd (Δd ≧ d n -d n -1), and outputs a signal S1 to the effect that running the dressing to the controller of the polishing apparatus to perform the dressing. If the current displacement amount d n exceeds the exchange shaving amount (displacement amount D) (d n ≧ D), a polishing pad exchange signal S2 is output.

【0020】研磨パッド2が弾性変形する材料で構成さ
れている場合、トップリング4の押圧力Pが大きいと研
磨パッド2が弾性変形し、正確な削れ量を測定できない
という問題がある。そこでこの押圧力Pが小さく弾性変
形が極力小さいときに、削れ量を測定する必要があり、
トップリング4の押圧力が所定値以下の時に削れ量を測
定している。例えば、図3に示すように、時間tの経過
と共に、押圧力Pを変化させて被研磨基板5を研磨する
場合、押圧力の小さい時間txで削れ量を測定する。
When the polishing pad 2 is made of a material that is elastically deformed, there is a problem that if the pressing force P of the top ring 4 is large, the polishing pad 2 is elastically deformed, and it is not possible to accurately measure the shaved amount. Therefore, when the pressing force P is small and the elastic deformation is as small as possible, it is necessary to measure the shaving amount.
The shaving amount is measured when the pressing force of the top ring 4 is equal to or less than a predetermined value. For example, as shown in FIG. 3, when the pressing force P is changed and the substrate to be polished 5 is polished as time t elapses, the shaving amount is measured at a time tx where the pressing force is small.

【0021】上記のように研磨パッド2の研磨面の削れ
量をトップリング回転軸6に設けたターゲット7の変位
量から検出するので、研磨面の削れ量を被研磨基板5の
研磨中にリアルタイムで検知することができる。また、
ターゲット7をトップリング回転軸6に設けているの
で、従来のように研磨面の削れ量測定毎に汚染が拡散す
るという問題はない。なお、ターゲット7の取付け位置
はトップリング回転軸6に限定されるものではなく、研
磨面に非接触で該研磨面の削れ量に応じて位置が変位す
る部分であれば、例えばトップリング4或いはトップリ
ング支持アーム(図示せず)等でもよい。
As described above, the removal amount of the polishing surface of the polishing pad 2 is detected from the displacement amount of the target 7 provided on the top ring rotating shaft 6, so that the removal amount of the polishing surface can be determined in real time during polishing of the substrate 5 to be polished. Can be detected. Also,
Since the target 7 is provided on the top ring rotating shaft 6, there is no problem that contamination is diffused every time the amount of abrasion of the polished surface is measured as in the related art. In addition, the mounting position of the target 7 is not limited to the top ring rotating shaft 6, but may be, for example, the top ring 4 or the top ring 4 if the position is displaced according to the shaving amount of the polishing surface without contacting the polishing surface. A top ring support arm (not shown) or the like may be used.

【0022】上記のようにコンピュータ11は、測定し
たターゲット7の変位量から研磨パッド2の研磨面のド
レッシング時期を判定するので、適正な時期に研磨面の
ドレッシングが実行でき、常に効率のよい研磨を実施で
きる。また、研磨パッド2の消耗量を少なくできる。ま
た、ターゲット7の変位量から研磨パッド2の交換時期
を判定するので、適正な時期に研磨部材の交換ができ、
まだ使用できる研磨パッド2を交換したり、交換時期が
遅れて機器や被研磨基板を損傷するということは無くな
る。
As described above, since the computer 11 determines the dressing time of the polishing surface of the polishing pad 2 from the measured displacement of the target 7, the dressing of the polishing surface can be executed at an appropriate time, and efficient polishing is always performed. Can be implemented. Further, the amount of consumption of the polishing pad 2 can be reduced. Further, since the replacement time of the polishing pad 2 is determined from the displacement amount of the target 7, the polishing member can be replaced at an appropriate time,
It is no longer necessary to replace the polishing pad 2 that can still be used, or to damage the equipment or the substrate to be polished due to the delay of replacement.

【0023】図5は研磨パッドの交換から次の研磨パッ
ドを交換するまでの処理例の流れを示す図である。先ず
研磨パッドを交換し(ステップST1)、そのことを装
置の制御部に通知する。これにより制御部はトップリン
グ4を研磨位置まで降下し、1回目の研磨と1回目のド
レッシングを行う(ダミーウエハによる馴らし研磨とド
レッシングの場合もある)(ステップST2、ST
3)。次に変位計測ヘッド8により、ターゲット7のイ
ニシャル高さH0を測定する(ステップST4)。次に
被研磨基板の研磨と研磨終了後の研磨面のドレッシング
を行い(ステップST5、ST6)、この研磨及びドレ
ッシングの終了する毎にターゲット7の高さHを測定す
る(ステップST7)。(なお、上記例では研磨パッド
2の変位量がドレッシングを必要とする研磨面の変位量
Δdに達したとき、研磨面のドレッシングを行っている
が、ここでは1回の研磨終了毎にドレッシングを行
う。)
FIG. 5 is a diagram showing a flow of a processing example from the replacement of the polishing pad to the replacement of the next polishing pad. First, the polishing pad is replaced (step ST1), and this is notified to the control unit of the apparatus. Thereby, the control unit lowers the top ring 4 to the polishing position, and performs the first polishing and the first dressing (in some cases, the dummy polishing and the dressing by the dummy wafer) (steps ST2 and ST2).
3). Next, the initial height H 0 of the target 7 is measured by the displacement measuring head 8 (step ST4). Next, polishing of the substrate to be polished and dressing of the polished surface after polishing are performed (steps ST5 and ST6), and the height H of the target 7 is measured each time the polishing and dressing are completed (step ST7). (In the above example, when the displacement amount of the polishing pad 2 reaches the displacement amount Δd of the polishing surface that requires dressing, dressing of the polishing surface is performed. Here, the dressing is performed every time polishing is completed. Do.)

【0024】続いて研磨パッド2の削れ量(研磨面の変
位量Δd=H0−H)が設定値(研磨パッド2の交換を
必要とする変位量D)に達したか否かを判断し(ステッ
プST8)、設定値に達しない場合は、前記ステップS
T5からの処理を繰返し、設定値に達した場合は警報設
定しているか否かを判断し(ステップST9)、設定し
ている場合は研磨パッド2の削れ量が交換時期に達した
ことを知らせる警報処理を行い(ステップST10)、
前記ステップST5からの処理を繰返し、警報設定して
いない場合は故障又は処理を中断し被処理基板(例えば
半導体ウエハ)の回収を行う(ステップST11)。
Subsequently, it is determined whether or not the shaving amount of the polishing pad 2 (the displacement amount Δd = H 0 -H of the polishing surface) has reached a set value (the displacement amount D requiring replacement of the polishing pad 2). (Step ST8) If the set value is not reached, the aforementioned step S8 is performed.
The processing from T5 is repeated, and when the set value is reached, it is determined whether or not an alarm is set (step ST9). When the set value is set, it is notified that the shaved amount of the polishing pad 2 has reached the replacement time. An alarm process is performed (step ST10),
The process from step ST5 is repeated, and if no alarm is set, the failure or the process is interrupted and the substrate to be processed (for example, a semiconductor wafer) is collected (step ST11).

【0025】上記警報処理の設定や故障又は処理中断・
被処理基板の回収を行う処理はユーザが任意に設定する
ようにする。なお、上記例では1回の研磨及びドレッシ
ング毎にターゲット7の高さHを測定しているが、数回
の研磨及びドレッシング毎にターゲット7の高さHを測
定するようにしてもよい。また、ターゲット7の高さH
の測定は研磨処理終了後に測定するようにしてもよい。
Setting of the above alarm processing, failure or interruption of processing
The process for collecting the substrate to be processed is arbitrarily set by the user. In the above example, the height H of the target 7 is measured for each polishing and dressing, but the height H of the target 7 may be measured for each polishing and dressing several times. Also, the height H of the target 7
May be measured after the polishing process is completed.

【0026】また、図1に示す研磨装置において、ター
ゲット7の上下方向の変位を変位測定ヘッドで測定し、
これによりトップリング4の上下振動を検出し、その振
動特徴により研磨パッド2の研磨面のドレッシング時期
及び研磨パッドの交換時期を判定することができる。図
6は研磨時間とトップリング4の上下振動の関係を示す
図である。図示するように、研磨時間が経過し、研磨面
の目づまりが進むと摩擦力が低下し、トップリング4の
上下方向の振動幅が小さくなる。
In the polishing apparatus shown in FIG. 1, the displacement of the target 7 in the vertical direction is measured by a displacement measuring head.
Thereby, the vertical vibration of the top ring 4 is detected, and the dressing time of the polishing surface of the polishing pad 2 and the replacement time of the polishing pad can be determined based on the vibration characteristics. FIG. 6 is a diagram showing the relationship between the polishing time and the vertical vibration of the top ring 4. As shown in the figure, when the polishing time has elapsed and the clogging of the polished surface proceeds, the frictional force decreases, and the vertical vibration width of the top ring 4 decreases.

【0027】したがって、図7に示すように、トップリ
ング4の上下振動を表す変位測定ヘッド8の出力信号を
A/D変換器21でデジタル信号に変換し、別置きパソ
コン又は装置制御部22に送り、別置きのパソコン又は
装置制御部22でこの上下振動幅が所定の値以下となっ
た場合、研磨パッド2の研磨面が目詰まりしたものと判
断し、ドレッシングを行う。
Therefore, as shown in FIG. 7, the output signal of the displacement measuring head 8 representing the vertical vibration of the top ring 4 is converted into a digital signal by the A / D converter 21 and sent to a separately installed personal computer or device control unit 22. When the vertical vibration width becomes equal to or less than a predetermined value by a separate personal computer or the device control unit 22, it is determined that the polishing surface of the polishing pad 2 is clogged, and dressing is performed.

【0028】また、研磨パッド2の研磨面の摩耗が進む
と被研磨基板と研磨面との摩擦力が増加し、図8に示す
ように、トップリング4の上下方向の振動が大きくな
る。したがって、図7に示す構成の処理システムにおい
て、トップリング4の上下方向の振動幅が所定値L以上
となった場合に、別置きパソコン又は装置制御部22が
研磨パッドの交換時期と判断する。
As the polishing surface of the polishing pad 2 wears, the frictional force between the substrate to be polished and the polishing surface increases, and the vertical vibration of the top ring 4 increases as shown in FIG. Therefore, in the processing system having the configuration shown in FIG. 7, when the vertical vibration width of the top ring 4 is equal to or larger than the predetermined value L, the separate PC or the device control unit 22 determines that it is time to replace the polishing pad.

【0029】上記ドレッシングを必要とするトップリン
グ4の上下方向振動幅及び研磨パッド2の交換を必要と
するトップリング4の上下方向振動幅はユーザにより任
意に設定し、該設定値に達したら別置きパソコン又は装
置制御部22は研磨面のドレッシング時期、研磨パッド
の交換時期と判断する。なお、トップリング4の上下方
向振動測定はトップリング4の押圧力と回転速度、研磨
面の回転速度を同一条件下で測定する。
The vertical vibration width of the top ring 4 requiring dressing and the vertical vibration width of the top ring 4 requiring replacement of the polishing pad 2 are arbitrarily set by a user. The placing personal computer or the device control unit 22 determines the time for dressing the polishing surface and the time for replacing the polishing pad. In the vertical vibration measurement of the top ring 4, the pressing force and the rotation speed of the top ring 4 and the rotation speed of the polishing surface are measured under the same conditions.

【0030】図9は別置きパソコン又は装置制御部22
でのドレッシング時期の判断及び自動ドレッシングの処
理フローを示す図である。先ず研磨を開始する(基本的
に同じ被処理基板の研磨とする)(ステップST2
1)。変位計測ヘッド8の出力からトップリング4の振
幅巾を測定する(ステップST22)。振幅巾測定回数
(サンプリング回数)がn回以上か否かをチェックし
(ステップST23)、n回に達していなかったらn回
に達するまで計測を繰返し、n回に達したら、次に計測
振幅幅の平均値Arangが研磨パッドの研磨面のドレ
ッシングを必要とする設定振幅幅X以下(Arang<
X)か否かをチェック(ステップST24)し、測定振
幅巾平均値Arangが設定振幅巾X以下でなかったら
X以下になるまで前記ステップST22〜23の処理を
繰返す。なお、設定振幅巾Xの値はユーザが任意に設定
できるようにする。
FIG. 9 shows a separate PC or device control unit 22.
It is a figure which shows the processing flow of judgment of dressing time and automatic dressing in FIG. First, polishing is started (basically, the same substrate to be processed is polished) (step ST2).
1). The amplitude width of the top ring 4 is measured from the output of the displacement measuring head 8 (step ST22). It is checked whether the number of times of amplitude width measurement (number of times of sampling) is equal to or more than n times (step ST23). If the number of times has not reached n times, the measurement is repeated until it reaches n times. Is less than or equal to the set amplitude width X (Arang <) that requires dressing of the polishing surface of the polishing pad.
X) is checked (step ST24), and if the measured amplitude width average value Arang is not equal to or smaller than the set amplitude width X, the processes of steps ST22 to ST23 are repeated until the average amplitude width becomes equal to or smaller than X. Note that the value of the set amplitude width X can be arbitrarily set by the user.

【0031】測定振幅巾平均値Arangが設定振幅幅
X以下の場合は、次に自動ドレッシングが設定されてい
るか否かをチェックし(ステップST25)、自動ドレ
ッシングが設定されている場合は、トップリング4を待
避させ(研磨中断)(ステップST26)、ドレッシン
グを開始し(ステップST27)、該ドレッシングが終
了したら、ステップST21に移行し、研磨を行う。ま
た、前記ステップST25において、自動ドレッシング
が設定されていない場合、研磨パッドの研磨面のドレッ
シングが必要な時期になっていることを知らせる警報を
発する(ステップST29)。
If the measured amplitude width average value Arang is equal to or smaller than the set amplitude width X, it is next checked whether or not automatic dressing is set (step ST25). If automatic dressing is set, top ring is set. 4 is evacuated (polishing interrupted) (step ST26), and dressing is started (step ST27). When the dressing is completed, the process proceeds to step ST21, and polishing is performed. If automatic dressing is not set in step ST25, an alarm is issued to notify that it is time to dress the polishing surface of the polishing pad (step ST29).

【0032】研磨の終了は研磨時間(例えば2分)、若
しくはエンドポイント検出(振動や光による膜厚測定)
によって、上記ドレッシング処理タイミングとは別に管
理される。図5に示す処理フローでは1枚の被研磨基板
の研磨終了毎にドレッシングを行っているが,必ずしも
毎回ドレッシングが必要でない場合もある。また、場合
によっては、例えばCuめっき層が厚く堆積した半導体
ウエハを被研磨基板として研磨する場合は、研磨時間が
長くなる可能性がある(例えば5分)。このような場合
には、被研磨基板の研磨中でもドレッシング時期を判別
する必要があり、図9に示す処理はこのような場合に有
効となる。
The completion of polishing is determined by polishing time (for example, 2 minutes) or end point detection (measurement of film thickness by vibration or light).
Thus, it is managed separately from the dressing processing timing. In the processing flow shown in FIG. 5, dressing is performed each time polishing of one substrate to be polished is completed. However, dressing may not always be necessary. In some cases, for example, when a semiconductor wafer on which a thick Cu plating layer is deposited is polished as a substrate to be polished, the polishing time may be long (for example, 5 minutes). In such a case, it is necessary to determine the dressing time even during polishing of the substrate to be polished, and the process shown in FIG. 9 is effective in such a case.

【0033】なお、上記実施形態例では、ターゲット7
をトップリング回転軸6に設けたが、これに限定される
ものではなく、図4に示すように、ドレッサー12のド
レッサー回転軸13に設け、研磨パッド2の研磨面のド
レッシング時に変位計測ヘッド8を介して削れ量を測定
してもよい。変位計測ヘッド8の出力信号の処理システ
ムは図2に示す構成と同じであるからその説明は省略す
る。図4において、18はドレッサーヘッド、19はシ
リンダ、20は変位計測ヘッド8を固定体17に固定す
るブラケットである。
In the above embodiment, the target 7
Is provided on the top ring rotation shaft 6, but is not limited to this. As shown in FIG. 4, the displacement measurement head 8 is provided on the dresser rotation shaft 13 of the dresser 12 when dressing the polishing surface of the polishing pad 2. The amount of scraping may be measured via the. The processing system for the output signal of the displacement measuring head 8 is the same as the configuration shown in FIG. In FIG. 4, reference numeral 18 denotes a dresser head, 19 denotes a cylinder, and 20 denotes a bracket for fixing the displacement measuring head 8 to the fixed body 17.

【0034】上記のように研磨パッド2の研磨面の削れ
量をドレッサー回転軸13に設けたターゲット7の変位
量から検出するので、研磨面の削れ量をドレッシング中
にリアルタイムで検知することができる。また、ターゲ
ット7をドレッサー回転軸13に設けているので、従来
のように研磨面の削れ量測定毎に汚染が拡散するという
問題はない。なお、ターゲット7を設ける位置はドレッ
サー回転軸13に限定されるものではなく、研磨面に非
接触で該研磨面の削れ量に応じて位置が変位する部分で
あれば、例えばトップリング4或いはトップリング支持
アーム(図示せず)等でもよい。
As described above, the amount of shaving of the polishing surface of the polishing pad 2 is detected from the amount of displacement of the target 7 provided on the dresser rotating shaft 13, so that the amount of shaving of the polishing surface can be detected in real time during dressing. . Further, since the target 7 is provided on the dresser rotation shaft 13, there is no problem that contamination is diffused every time the amount of abrasion of the polished surface is measured as in the related art. Note that the position where the target 7 is provided is not limited to the dresser rotating shaft 13. For example, the top ring 4 or the top ring 4 may be used as long as the position is displaced according to the amount of shaving of the polishing surface without contacting the polishing surface. A ring support arm (not shown) or the like may be used.

【0035】なお、上記研磨装置の構成例では、ターン
テーブル1の上面の研磨面の構成部材として、研磨パッ
ド2を貼り付ける例を説明したが、本発明で対象とする
研磨装置はこれに限定されるものではなく、ターンテー
ブル1の上面に砥石板(砥粒を含む研磨プレート)を設
けたものでもよい。
In the above example of the polishing apparatus, an example in which the polishing pad 2 is attached as a constituent member of the polishing surface on the upper surface of the turntable 1 has been described. However, the polishing apparatus targeted by the present invention is not limited to this. Instead, a whetstone plate (a polishing plate containing abrasive grains) may be provided on the upper surface of the turntable 1.

【0036】[0036]

【発明の効果】以上、説明したように各請求項に記載の
発明によれば下記のような効果が得られる。
As described above, according to the invention described in each claim, the following effects can be obtained.

【0037】請求項1に記載の発明によれば、研磨部材
削れ量検知手段を設け、基板保持機構又はドレッサー機
構に設けたターゲットの変位量から研磨部材の削れ量を
検出するので、研磨部材の削れ量を被研磨基板の研磨中
又は研磨面のドレッシング中にリアルタイムで検知する
ことができる。また、研磨部材削れ量測定用のターゲッ
トは研磨面に非接触で該研磨部材の削れ量に応じて位置
が変位する部分に設けるので、従来のように研磨面に接
触しながら削れ量を測定するものとは異なり、削れ量測
定毎に汚染が拡散するという問題はない。
According to the first aspect of the present invention, the abrasive member scraping amount detecting means is provided, and the amount of grinding of the polishing member is detected from the displacement amount of the target provided in the substrate holding mechanism or the dresser mechanism. The amount of shaving can be detected in real time during polishing of the substrate to be polished or dressing of the polished surface. In addition, since the target for measuring the amount of scraping of the polishing member is provided in a portion where the position is displaced in accordance with the amount of scraping of the polishing member without contacting the polishing surface, the amount of scraping is measured while contacting the polishing surface as in the related art. Unlike the one, there is no problem that the contamination is diffused each time the shaved amount is measured.

【0038】請求項2に記載の発明によれば、研磨部材
削れ量検知手段はターゲットに非接触でその変位量を測
定する機能を具備するので、ターゲットを基板保持機構
又はドレッサー機構の回転部に設けても、固定側から容
易に変位量を測定できる。
According to the second aspect of the present invention, since the polishing member scraping amount detecting means has a function of measuring a displacement amount of the polishing member without contacting the target, the target is mounted on the rotating portion of the substrate holding mechanism or the dresser mechanism. Even if it is provided, the displacement amount can be easily measured from the fixed side.

【0039】請求項3に記載の発明によれば、研磨部材
削れ量検知手段が基板保持機構又はドレッサー機構の研
磨面押圧力が所定値以下の時に測定したターゲットの変
位量から研磨部材削れ量を測定するので、研磨部材が弾
性変形する材料からなる場合でも、弾性変形が少ない状
態で研磨部材の削れ量を検知できる。
According to the third aspect of the present invention, the polishing member scraping amount detecting means determines the polishing member scraping amount from the target displacement measured when the polishing surface pressing force of the substrate holding mechanism or the dresser mechanism is below a predetermined value. Since the measurement is performed, even if the polishing member is made of a material that is elastically deformed, the amount of scraping of the polishing member can be detected with little elastic deformation.

【0040】請求項4に記載の発明によれば、研磨部材
削れ量検知手段が測定した基板保持機構又はドレッサー
機構に設けたターゲットの変位量から研磨面のドレッシ
ング時期を判定するドレッシング時期判定機能を具備す
るので、適正な時期に研磨面のドレッシングが実行で
き、常に効率のよい研磨を実施できると共に、研磨部材
の消耗を少なくできる。
According to the fourth aspect of the present invention, there is provided a dressing timing determining function for determining a dressing timing of a polished surface from a displacement of a target provided in a substrate holding mechanism or a dresser mechanism measured by a polishing member scraping amount detecting means. Since it is provided, dressing of the polishing surface can be executed at an appropriate time, efficient polishing can be always performed, and consumption of the polishing member can be reduced.

【0041】また、請求項5に記載の発明によれば、研
磨部材削れ量検知手段が測定した基板保持機構又はドレ
ッサー機構に設けたターゲットの変位量から研磨部材の
交換時期を判定する研磨部材交換時期判定機能を具備す
るので、適正な時期に研磨部材の交換ができ、まだ使用
できる研磨部材を交換したり、交換時期が遅れて機器や
被研磨基板を損傷するということは無くなる。
Further, according to the fifth aspect of the present invention, a polishing member replacement which determines a replacement time of a polishing member from a displacement amount of a target provided on a substrate holding mechanism or a dresser mechanism measured by a polishing member scraping amount detecting means. Since the timing determination function is provided, the polishing member can be replaced at an appropriate time, and there is no need to replace a polishing member that can still be used, or to damage a device or a substrate to be polished by delaying the replacement time.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る研磨装置のトップリングとターン
テーブルの概略構成を示す図である。
FIG. 1 is a diagram showing a schematic configuration of a top ring and a turntable of a polishing apparatus according to the present invention.

【図2】変位計測ヘッドの出力を処理する装置のシステ
ム構成を示す図である。
FIG. 2 is a diagram showing a system configuration of an apparatus for processing an output of a displacement measuring head.

【図3】被研磨基板の研磨時の被研磨基板押圧力と時間
の関係の一例を示す図である。
FIG. 3 is a diagram illustrating an example of a relationship between a pressing force of a substrate to be polished and time during polishing of the substrate to be polished;

【図4】本発明に係る研磨装置のドレッサーとターンテ
ーブルの概略構成を示す図である。
FIG. 4 is a diagram showing a schematic configuration of a dresser and a turntable of the polishing apparatus according to the present invention.

【図5】本発明に係る研磨装置における研磨パッド交換
から次の研磨パッド交換までの処理フロー例を示す図で
ある。
FIG. 5 is a diagram showing an example of a processing flow from replacement of a polishing pad to replacement of the next polishing pad in the polishing apparatus according to the present invention.

【図6】研磨時間とトップリングの上下方向の振動変化
の関係を示す図である。
FIG. 6 is a diagram showing a relationship between a polishing time and a change in vibration of a top ring in a vertical direction.

【図7】変位計測ヘッドの出力からドレッシング時期、
研磨パッド交換時期を判定するシステムの構成例を示す
図である。
FIG. 7 shows a dressing timing based on an output of a displacement measuring head,
It is a figure showing the example of composition of the system which judges a polishing pad exchange time.

【図8】研磨時間とトップリングの上下方向の振動変化
の関係を示す図である。
FIG. 8 is a diagram showing a relationship between a polishing time and a change in vibration of a top ring in a vertical direction.

【図9】本発明に係る研磨装置における研磨パッドの研
磨面のドレッシング時期判定及び自動ドレッシング処理
フロー例を示す図である。
FIG. 9 is a diagram showing an example of a dressing timing determination and automatic dressing processing flow of a polishing surface of a polishing pad in the polishing apparatus according to the present invention.

【符号の説明】[Explanation of symbols]

1 ターンテーブル 2 研磨パッド 3 ターンテーブル回転軸 4 トップリング 5 被研磨基板 6 トップリング回転軸 7 ターゲット 8 変位計測ヘッド 9 変位計 10 A/D変換器 11 コンピュータ 12 ドレッサー 13 ドレッサー回転軸 14 トップリングヘッド 15 シリンダ 16 ブラケット 17 固定体 18 ドレッサーヘッド 19 シリンダ 21 A/D変換器 22 別置きパソコン又は装置制御部 DESCRIPTION OF SYMBOLS 1 Turntable 2 Polishing pad 3 Turntable rotation axis 4 Top ring 5 Substrate to be polished 6 Top ring rotation axis 7 Target 8 Displacement measurement head 9 Displacement meter 10 A / D converter 11 Computer 12 Dresser 13 Dresser rotation axis 14 Top ring head 15 Cylinder 16 Bracket 17 Fixed body 18 Dresser head 19 Cylinder 21 A / D converter 22 Separately installed personal computer or device control unit

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/304 622 H01L 21/304 622M 622S ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/304 622 H01L 21/304 622M 622S

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 研磨面を構成する研磨部材を有するター
ンテーブルと、被研磨基板を保持する基板保持機構と、
該研磨部材の研磨面のドレッシングを行うドレッサー機
構を具備し、該研磨面に前記基板保持機構で保持した被
研磨基板を押圧し、該研磨面と被研磨基板の相対運動に
より被研磨基板を研磨すると共に、前記ドレッサーで研
磨面のドレッシングを行う研磨装置であって、 前記基板保持機構又はドレッサー機構の前記研磨面に非
接触で該研磨部材の削れ量に応じて位置が変位する部分
にターゲットを設けると共に、該ターゲットの変位量を
測定し、該測定した変位量から前記研磨部材の削れ量を
検知する研磨部材削れ量検知手段を設けたことを特徴と
する研磨装置。
A turntable having a polishing member constituting a polishing surface; a substrate holding mechanism for holding a substrate to be polished;
A dresser mechanism for dressing the polished surface of the polishing member; pressing the substrate to be polished held by the substrate holding mechanism on the polished surface; polishing the polished substrate by relative movement between the polished surface and the polished substrate; And a polishing apparatus for dressing a polishing surface with the dresser, wherein the target is placed on a portion of the substrate holding mechanism or the dresser mechanism whose position is displaced in a non-contact manner with the polishing surface of the polishing member in a non-contact manner. A polishing apparatus, further comprising: a polishing member scraping amount detecting means for measuring a displacement amount of the target and detecting a scraping amount of the polishing member from the measured displacement amount.
【請求項2】 請求項1に記載の研磨装置において、 前記研磨部材削れ量検知手段は、前記ターゲットの変位
量を該ターゲットに非接触で測定する機能を具備するこ
とを特徴とする研磨装置。
2. The polishing apparatus according to claim 1, wherein the polishing member scraping amount detecting means has a function of measuring a displacement amount of the target without contacting the target.
【請求項3】 請求項1又は2に記載の研磨装置におい
て、 前記研磨部材削れ量検知手段は、前記基板保持機構又は
ドレッサー機構の研磨面押圧力が所定値以下の時に測定
したターゲットの変位量から研磨面削れ量を測定する機
能を具備することを特徴とする研磨装置。
3. The polishing apparatus according to claim 1, wherein the polishing member scraping amount detecting means is configured to measure a displacement amount of the target measured when a pressing force of the polishing surface of the substrate holding mechanism or the dresser mechanism is equal to or less than a predetermined value. A polishing apparatus having a function of measuring the amount of polished surface scraping from the surface.
【請求項4】 請求項1又は2又は3に記載の研磨装置
において、 前記研磨部材削れ量検知手段は、測定した前記基板保持
機構又はドレッサー機構に設けたターゲットの変位量か
ら研磨面のドレッシング時期を判定するドレッシング時
期判定機能を具備することを特徴とする研磨装置。
4. The polishing apparatus according to claim 1, wherein the polishing member scraping amount detecting means determines a dressing time of a polishing surface based on a measured displacement amount of a target provided on the substrate holding mechanism or the dresser mechanism. A dressing time determining function for determining the polishing time.
【請求項5】 請求項1乃至4のいずれか1項に記載の
研磨装置において、 前記研磨部材削れ量検知手段は、測定した前記基板保持
機構又はドレッサー機構に設けたターゲットの変位量か
ら前記研磨部材の交換時期を判定する研磨部材交換時期
判定機能を具備することを特徴とする研磨装置。
5. The polishing apparatus according to claim 1, wherein the polishing member scraping amount detecting means is configured to determine the polishing amount based on a measured displacement amount of a target provided on the substrate holding mechanism or the dresser mechanism. A polishing apparatus comprising a polishing member replacement time determination function for determining a replacement time of a member.
JP2000157006A 2000-05-26 2000-05-26 Polishing device Pending JP2001334461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000157006A JP2001334461A (en) 2000-05-26 2000-05-26 Polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000157006A JP2001334461A (en) 2000-05-26 2000-05-26 Polishing device

Publications (2)

Publication Number Publication Date
JP2001334461A true JP2001334461A (en) 2001-12-04
JP2001334461A5 JP2001334461A5 (en) 2005-07-07

Family

ID=18661707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000157006A Pending JP2001334461A (en) 2000-05-26 2000-05-26 Polishing device

Country Status (1)

Country Link
JP (1) JP2001334461A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004025413A (en) * 2002-06-28 2004-01-29 Nikon Corp Polishing pad and the like life / quality judgment method, polishing pad conditioning method, polishing apparatus, semiconductor device, and semiconductor device manufacturing method
JP2009131955A (en) * 2004-11-01 2009-06-18 Ebara Corp Polishing equipment
JP2010280031A (en) * 2009-06-04 2010-12-16 Ebara Corp Dressing apparatus and dressing method
JP2012250309A (en) * 2011-06-02 2012-12-20 Ebara Corp Method and apparatus for monitoring polishing surface of polishing pad used for polishing device
US8845396B2 (en) 2004-11-01 2014-09-30 Ebara Corporation Polishing apparatus
CN107695860A (en) * 2017-11-07 2018-02-16 佛山市南海富东机械设备有限公司 A kind of abrasive disc for polishing marble slabs device
JP2025503379A (en) * 2022-10-27 2025-02-04 アプライド マテリアルズ インコーポレイテッド Acoustic Carrier Head Monitoring

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09285959A (en) * 1996-04-18 1997-11-04 Hitachi Cable Ltd Wafer polishing method
JPH1086056A (en) * 1996-09-11 1998-04-07 Speedfam Co Ltd Management method and device for polishing pad
JPH10315131A (en) * 1997-05-23 1998-12-02 Hitachi Ltd Method and apparatus for polishing semiconductor wafer
JPH10315118A (en) * 1997-05-19 1998-12-02 Toshiba Corp Abrasive cloth dressing equipment
JPH11198025A (en) * 1997-07-11 1999-07-27 Tokyo Seimitsu Co Ltd Wafer polishing device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09285959A (en) * 1996-04-18 1997-11-04 Hitachi Cable Ltd Wafer polishing method
JPH1086056A (en) * 1996-09-11 1998-04-07 Speedfam Co Ltd Management method and device for polishing pad
JPH10315118A (en) * 1997-05-19 1998-12-02 Toshiba Corp Abrasive cloth dressing equipment
JPH10315131A (en) * 1997-05-23 1998-12-02 Hitachi Ltd Method and apparatus for polishing semiconductor wafer
JPH11198025A (en) * 1997-07-11 1999-07-27 Tokyo Seimitsu Co Ltd Wafer polishing device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004025413A (en) * 2002-06-28 2004-01-29 Nikon Corp Polishing pad and the like life / quality judgment method, polishing pad conditioning method, polishing apparatus, semiconductor device, and semiconductor device manufacturing method
US10293455B2 (en) 2004-11-01 2019-05-21 Ebara Corporation Polishing apparatus
US10040166B2 (en) 2004-11-01 2018-08-07 Ebara Corporation Polishing apparatus
US11224956B2 (en) 2004-11-01 2022-01-18 Ebara Corporation Polishing apparatus
JP2009131955A (en) * 2004-11-01 2009-06-18 Ebara Corp Polishing equipment
US8845396B2 (en) 2004-11-01 2014-09-30 Ebara Corporation Polishing apparatus
US9724797B2 (en) 2004-11-01 2017-08-08 Ebara Corporation Polishing apparatus
JP2010280031A (en) * 2009-06-04 2010-12-16 Ebara Corp Dressing apparatus and dressing method
US8517796B2 (en) 2009-06-04 2013-08-27 Ebara Corporation Dressing apparatus, dressing method, and polishing apparatus
US9302366B2 (en) 2011-06-02 2016-04-05 Ebara Corporation Method and apparatus for monitoring a polishing surface of a polishing pad used in polishing apparatus
US9943943B2 (en) 2011-06-02 2018-04-17 Ebara Corporation Method and apparatus for monitoring a polishing surface of a polishing pad used in polishing apparatus
US9156122B2 (en) 2011-06-02 2015-10-13 Ebara Corporation Method and apparatus for monitoring a polishing surface of a polishing pad used in polishing apparatus
JP2012250309A (en) * 2011-06-02 2012-12-20 Ebara Corp Method and apparatus for monitoring polishing surface of polishing pad used for polishing device
CN107695860A (en) * 2017-11-07 2018-02-16 佛山市南海富东机械设备有限公司 A kind of abrasive disc for polishing marble slabs device
CN107695860B (en) * 2017-11-07 2023-10-20 佛山市高明富东机械制造有限公司 Marble slab polishing millstone device
JP2025503379A (en) * 2022-10-27 2025-02-04 アプライド マテリアルズ インコーポレイテッド Acoustic Carrier Head Monitoring

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