JP2001337462A - Exposure apparatus, method of manufacturing exposure apparatus, and method of manufacturing micro device - Google Patents

Abstract

(57) [Problem] To quickly and accurately measure the optical characteristics of a large number of projection optical units and perform optical adjustment with high precision. An illumination optical system (IL) for illuminating a mask (M) on which a predetermined pattern is formed, and a plurality of projection optical units (PL1) arranged along a predetermined direction.
To PL5), the pattern image of the mask is transferred to the photosensitive substrate (P) via the projection optical system.
Exposure equipment that projects and exposes light. An image detection system (ID) for detecting an image formed via each of the plurality of projection optical units is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, a method of manufacturing an exposure apparatus, and a method of manufacturing a micro device. More particularly, the present invention relates to a mask and a photosensitive system for a projection optical system including a plurality of catadioptric projection optical units. The present invention relates to a multi-scan type projection exposure apparatus that projects and exposes a mask pattern on a photosensitive substrate while moving the substrate.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels have been frequently used as display elements for word processors, personal computers, televisions, and the like. A liquid crystal display panel is manufactured by patterning a transparent thin-film electrode on a plate into a desired shape by a photolithography technique. As an apparatus for the photolithography process, a projection exposure apparatus that projects and exposes an original pattern formed on a mask to a photoresist layer on a plate via a projection optical system is used.

In recent years, there has been an increasing demand for a large-sized liquid crystal display panel, and with this demand, it has been desired to enlarge the exposure area in this type of projection exposure apparatus.
Therefore, in order to enlarge the exposure area, a so-called multi-scan type projection exposure apparatus has been proposed. In a multi-scan projection exposure apparatus, a mask pattern is projected and exposed on a plate while moving the mask and the plate with respect to a projection optical system including a plurality of projection optical units.

[0004]

The multi-scan type projection exposure apparatus as described above has an advantage that a large area pattern can be transferred only by increasing the number of projection optical units whose production cost is low. However, as the number of projection optical units increases, there is a disadvantage that much time and labor are required for optical adjustment of the projection optical system. Specifically, as the number of projection optical units increases, measuring the optical properties of each projection optical unit, such as image position, image rotation, magnification, and aberration, requires a great deal of time and effort. However, there is a disadvantage that it takes a lot of time and effort to optically adjust the optical characteristics so that the optical characteristics individually and mutually become a desired state.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and an exposure apparatus capable of quickly and accurately measuring the optical characteristics of a large number of projection optical units and performing optical adjustment with high precision, and manufacturing the same. The aim is to provide a method. It is another object of the present invention to provide an exposure apparatus capable of measuring and optically adjusting optical characteristics of a projection optical system with high accuracy while substantially avoiding thermal drift and the like due to exposure light exposure, and a method of manufacturing the same. I do.

Further, the present invention provides a method of manufacturing a large-area and good microdevice (semiconductor element, liquid crystal display element, thin film magnetic head, etc.) by good exposure using an exposure apparatus optically adjusted with high precision. It is an object of the present invention to provide a method for manufacturing a micro device.

[0007]

According to a first aspect of the present invention, an illumination optical system for illuminating a mask on which a predetermined pattern is formed is arranged along a predetermined direction. A projection optical system having a plurality of projection optical units, and an exposure apparatus for projecting and exposing the pattern image of the mask onto a photosensitive substrate via the projection optical system, through each of the plurality of projection optical units There is provided an exposure apparatus including an image detection system for detecting an image to be formed.

According to a preferred aspect of the first invention, the image detection system includes a relay optical system for forming a secondary image based on light from an image formed via each projection optical system; An image sensor for detecting the secondary image formed via the relay optical system. Further, based on the output of the image detection system, a measurement system for measuring at least one optical characteristic among image position, image rotation, magnification, rotational symmetric aberration, and non-rotational symmetric aberration in each projection optical unit is provided. It is preferable to further provide.

According to a preferred embodiment of the first invention,
A substrate stage for two-dimensionally moving the photosensitive substrate along an image plane of the projection optical system; and the image detection system is attached to the substrate stage. In this case, it is preferable that the image detection system has a pair of image detection systems spaced apart along the predetermined direction. Further, in this case, the image detection system has an index plate which is positioned at substantially the same position as the image plane of the projection optical system and is provided with an index for use in mutual alignment of the pair of image detection systems. Is preferred.

Further, according to a preferred aspect of the first invention, the plurality of projection optical units are configured so as to form an exposure area that partially overlaps with an adjacent projection optical unit, and the pair of image optical units is formed. The detection system has an interval corresponding to the interval between the partially overlapping portions in the exposure area. Also,
It is preferable that the image forming apparatus further includes adjusting means for adjusting optical characteristics of at least one of the plurality of projection optical units based on an output from the image detection system. Further, it is preferable that the projection optical unit has a field stop for limiting each exposure field, and the position of the field stop in each projection optical unit is measured by the image detection system. In this case, the image position of the field stop in each projection optical unit is measured by the image detection system, and the position is measured, and the position of the field stop in each projection optical unit is adjusted based on the measurement result.

According to a second aspect of the present invention, there is provided an illumination optical system for illuminating a mask having a predetermined pattern formed thereon, and a projection optical system for projecting and exposing a pattern image of the mask onto a photosensitive substrate. An exposure apparatus for detecting an image formed via the projection optical system via an image sensor, and reducing incident light to the image detection system according to the detection sensitivity of the image sensor. There is provided an exposure apparatus comprising: a light-reducing means for emitting light. In this case, it is preferable that the dimming unit has a metal film or a dielectric film formed on a transparent substrate or a fine pattern of light-shielding properties.

In a third aspect of the present invention, an exposure step of exposing the pattern of the mask to the photosensitive substrate using the exposure apparatus of the first and second aspects, and a developing step of developing the exposed substrate And a method for manufacturing a microdevice, comprising:

According to a fourth aspect of the present invention, there is provided an illumination optical system for illuminating a mask on which a predetermined pattern is formed, and a projection optical system having a plurality of projection optical units arranged along a predetermined direction. A manufacturing method of an exposure apparatus for projecting and exposing a pattern image of the mask onto the photosensitive substrate via the projection optical system, wherein an image formed by each of the plurality of projection optical units is detected. And a measuring step of measuring at least one optical characteristic of an image position, image rotation, magnification, rotationally symmetric aberration, and non-rotationally symmetric aberration in each projection optical unit based on the information obtained in the detection step. And a step of optically adjusting each projection optical unit based on the information obtained in the measurement step.

According to a preferred aspect of the fourth invention, the plurality of projection optical units are configured to form an exposure area that partially overlaps with an adjacent projection optical unit,
In the adjusting step, the optical characteristics of the adjacent projection optical units are set so as to change according to substantially the same tendency in the partially overlapping portion of the exposure area.

In a fifth aspect of the present invention, an exposure step of exposing a pattern of a mask to a photosensitive substrate via a projection optical system having a plurality of projection optical units arranged along a predetermined direction; A method of manufacturing a micro device including a developing step of developing a substrate, a detecting step of detecting an image formed through each of the plurality of projection optical units, based on information obtained in the detecting step. A measurement step of measuring at least one optical property of the image position, image rotation, magnification, rotationally symmetric aberration, and non-rotationally symmetric aberration in each projection optical unit, based on the information obtained in the measurement step, And a step of optically adjusting each projection optical unit.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention has an image detecting system for detecting an image formed through each projection optical unit. In this image detection system, for example, a relay optical system that enlarges and forms a secondary image based on light from an image formed through each projection optical system, and a secondary image formed through the relay optical system And an image sensor for detection. Then, based on the output of the image detection system, optical characteristics such as image position, image rotation, magnification, rotationally symmetric aberration, and non-rotationally symmetric aberration in each projection optical unit are measured. Further, if necessary, the fluctuation of the optical characteristics measured for each projection optical unit is adjusted (corrected).

As described above, according to the present invention, since an image formed through each projection optical unit is detected using an image pickup device such as a two-dimensional CCD, the substrate stage is scanned with high accuracy when detecting the image. Unlike a conventional slit scan type sensor that needs to be operated, image detection is performed in a state where a large substrate stage is stopped without being scanned with high accuracy. As a result, even when the present invention is applied to a multi-scan type projection exposure apparatus having a particularly large substrate stage, the detection time of an optical image is significantly shorter than that of the related art, and thus the measurement of the optical characteristics of each projection optical unit. Time is also shorter.

Further, even if the detection accuracy itself of the image detection system of the present invention is substantially the same as that of the conventional slit scan type sensor, the image detection system of the present invention can detect more than the conventional slit scan type sensor. As the time is shorter, the number of measurements in the same time increases. As a result, according to the present invention, the optical characteristics of each projection optical unit can be measured with higher accuracy than in the related art due to the averaging effect based on a large number of measurement information, and thus each projection optical unit can be measured with higher accuracy than in the related art The optical characteristics of the unit can be adjusted.

Further, according to the present invention, when an image formed through the projection optical system is detected through the image pickup device, the light incident on the image detection system is reduced according to the detection sensitivity of the image pickup device. For example, a dimming filter having a metal film or a dielectric film formed on a transparent substrate is provided as the dimming means.
In this case, since the optical image by the illumination light of moderate intensity is continuously detected for a predetermined time, the averaging effect by time is more effective than detecting the optical image in a short time using a high-speed shutter or the like. Is obtained. In addition, it is possible to avoid deterioration of detection accuracy due to thermal drift or thermal deformation which may occur when the exposure light having high power is directly applied to the image detection system, and furthermore, deterioration of the measurement result.

As described above, in the exposure apparatus according to the present invention, the optical characteristics of many projection optical units can be measured quickly and accurately, and the optical adjustment can be performed with high precision. Further, in the exposure apparatus according to the present invention, the optical characteristics of the projection optical system can be measured with high accuracy and optically adjusted while substantially avoiding thermal drift or the like due to exposure light exposure. Furthermore, by performing good exposure using the exposure apparatus configured according to the present invention, a high-precision liquid crystal display element, for example, as a large-area and good microdevice can be manufactured.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a perspective view schematically showing an overall configuration of an exposure apparatus according to an embodiment of the present invention. Also,
FIG. 2 is a diagram schematically showing a configuration of an illumination system in the exposure apparatus of FIG. FIG. 3 is a diagram schematically showing a configuration of each projection optical unit constituting a projection optical system in the exposure apparatus of FIG. FIG. 4 is a diagram schematically showing a configuration of an image detection system provided in the exposure apparatus of FIG.

In the present embodiment, there is provided a multi-scan type projection exposure apparatus for projecting and exposing a mask pattern onto a plate while moving the mask and the plate with respect to a projection optical system comprising a plurality of catadioptric projection optical units. The present invention is applied. 1 to 3, the X-axis is set along the direction (scanning direction) in which the mask on which a predetermined circuit pattern is formed and the plate on which the resist is applied are moved. Further, a Y axis is set along a direction (scanning orthogonal direction) orthogonal to the X axis in a plane of the mask, and a Z axis is set along a normal direction of the plate.

The exposure apparatus of the present embodiment provides illumination for uniformly illuminating a mask M supported in parallel to the XY plane via a mask holder (not shown) on a mask stage (not shown in FIG. 1) MS. System IL. Referring to FIGS. 1 and 2, the illumination system IL includes a light source 1 formed of, for example, an ultra-high pressure mercury lamp. The light source 1 is positioned at a first focal position of an elliptical mirror 2 having a reflection surface formed of a spheroid. Therefore, the illumination light beam emitted from the light source 1 forms a light source image at the second focal position of the elliptical mirror 2 via the reflecting mirror (plane mirror) 3. A shutter (not shown) is arranged at the second focal position.

The divergent light flux from the light source image formed at the second focal position of the elliptical mirror 2 forms an image again via the relay lens system 4. In the vicinity of the pupil plane of the relay lens system 4, a wavelength selection filter 5 (not shown in FIG. 1) that transmits only a light beam in a desired wavelength range is arranged. In the wavelength selection filter 5, light of the g-line (436 nm) and light of the h-line (405 nm)
And i-line (365 nm) light are simultaneously selected as exposure light. In the wavelength selection filter 5, for example, g
Line light and h-line light can be selected at the same time,
The light of the h-line and the light of the i-line can be selected simultaneously, or only the light of the i-line can be selected.

The neutral density filter 6 is provided so as to be freely inserted into and removed from the pupil plane of the relay lens system 4. The neutral density filter 6 is formed, for example, by depositing a metal film or a dielectric film having a substantially uniform transmittance on a transparent glass substrate. The operation of the neutral density filter 6 will be described later. Further, an incident end 7a of the light guide 7 is arranged near a position where the light source image is formed by the relay lens system 4. The light guide 7 is, for example, a random light guide fiber configured by randomly bundling a large number of fiber wires, and has the same number of incident ends 7a as the number of light sources 1 (one in FIG. 1) and a projection optical system. The same number of emission ends 7 as the number of projection optical units (five in FIG. 1) constituting the PL
b to 7f (only the emission end 7b is shown in FIG. 2). In this manner, the light that has entered the incident end 7a of the light guide 7 propagates through the inside thereof, and then the five exit ends 7b to 7b.
Injected from f.

The divergent light beam emitted from the emission end 7b of the light guide 7 is converted into a substantially parallel light beam by a collimating lens 8b (not shown in FIG. 1), and then a fly-eye integrator (optical integrator) 9
b. FlyEye Integrator 9b
A large number of positive lens elements are arranged vertically and horizontally and densely so that their central axes extend along the optical axis AX. Therefore, the light beam incident on the fly-eye integrator 9b is split into wavefronts by a large number of lens elements, and a secondary light source composed of the same number of light source images as the number of lens elements is formed on the rear focal plane (ie, near the exit surface). I do. That is, a substantial surface light source is formed on the rear focal plane of the fly-eye integrator 9b.

The light beam from the secondary light source is restricted by an aperture stop 10b (not shown in FIG. 1) disposed near the rear focal plane of the fly-eye integrator 9b, and then enters the condenser lens system 11b. . The aperture stop 10b is disposed at a position optically substantially conjugate with the pupil plane of the corresponding projection optical unit PL1, and has a variable aperture for defining the range of the secondary light source that contributes to illumination. By changing the aperture diameter of the variable aperture, the aperture stop 10b determines the σ value (the pupil plane with respect to the aperture diameter of the pupil plane of each of the projection optical units PL1 to PL5 constituting the projection optical system PL). The above (the ratio of the aperture of the secondary light source image) is set to a desired value.

The light beam passing through the condenser lens system 11b illuminates the mask M on which a predetermined transfer pattern is formed in a superimposed manner. Similarly, the other exit end 7c of the light guide 7
The divergent light beams emitted from .about.
c to 8f, fly eye integrators 9c to 9f,
The mask M is illuminated in a superimposed manner via the aperture stops 10c to 10f and the condenser lens systems 11c to 11f. That is, the illumination system IL illuminates a plurality (five in FIG. 1 in total) of trapezoidal regions arranged in the Y direction on the mask M.

In the example described above, the illumination light from one light source 1 is equally divided into five illumination lights via the light guide 7 in the illumination system IL. Various modifications are possible without being limited to the number. That is, two or more light sources are provided as needed, and the illumination light from the two or more light sources is equally divided into a required number (the number of projection optical units) of illumination light via a light guide having good randomness. You can also. In this case, the light guide has the same number of entrance ends as the number of light sources, and has the same number of exit ends as the number of projection optical units.

The light from each illumination area on the mask M is divided into a plurality (five in FIG. 1) of projection optical units PL1 to PL arranged in the Y direction so as to correspond to each illumination area.
The light enters the projection optical system PL including L5. Here, the configuration of each of the projection optical units PL1 to PL5 is the same as each other. Hereinafter, the configuration of each projection optical unit will be described with reference to FIG.

The projection optical unit shown in FIG.
And a first imaging optical system K1 for forming a primary image of a mask pattern based on light from the primary image, and an erect image (secondary image) of the mask pattern formed on the plate P based on light from the primary image. A second imaging optical system K2. In the vicinity of the position where the primary image of the mask pattern is formed, a field stop FS that defines the field of view (illumination area) of the projection optical unit on the mask M and the projection area (exposure area) of the projection optical unit on the plate P Is provided.

The first image forming optical system K1 is connected from the mask M to -Z
A first right-angle prism PR1 having a first reflecting surface inclined at an angle of 45 ° with respect to the mask surface (XY plane) so as to reflect light incident along the direction in the −X direction is provided. Further, the first imaging optical system K1 includes a first right-angle prism P
In order from the R1 side, a first refractive optical system G having a positive refractive power
1P and a first concave reflecting mirror M1 having a concave surface facing the first right-angle prism PR1. The first refractive optical system G1P and the first concave reflecting mirror M1 are arranged along the X direction, and constitute a first catadioptric optical system HK1 as a whole. First
Light incident on the first right-angle prism PR1 from the catadioptric optical system HK1 along the + X direction is reflected by the second reflection surface inclined at an angle of 45 ° with respect to the mask surface (XY plane).
It is reflected in the Z direction.

On the other hand, the second imaging optical system K2 is arranged on a plate surface (XY plane) so that light incident along the -Z direction from the second reflecting surface of the first right-angle prism PR1 is reflected in the -X direction. A second right-angle prism PR2 having a first reflection surface inclined at an angle of 45 ° is provided. Also, the second
The imaging optical system K2 includes, in order from the second right-angle prism PR2 side, a second refractive optical system G2P having a positive refractive power, and a second concave reflecting mirror M2 having a concave surface facing the second right-angle prism PR2 side.
And The second refractive optical system G2P and the second concave reflecting mirror M2 are arranged along the X direction, and constitute the second catadioptric optical system HK2 as a whole. From the second catadioptric optical system HK2 along the + X direction, the second right-angle prism PR2
Incident on the plate surface (XY plane surface)
The light is reflected in the −Z direction by the second reflecting surface inclined at an angle of 5 °.

In this embodiment, the mask-side magnification correcting optical system Gm is provided in the optical path between the first catadioptric optical system HK1 and the second reflecting surface of the first right-angle prism PR1, and the second catadioptric system is provided. A plate-side magnification correcting optical system G is provided in the optical path between the optical system HK2 and the second reflecting surface of the second right-angle prism PR2.
p is attached. Further, a first parallel plane plate P2 and a second parallel plane plate P2 as image shifters are provided in the optical path between the mask M and the first reflection surface of the first right-angle prism PR1.

FIG. 5 shows a magnification correction optical system G on the mask side shown in FIG.
FIG. 4 is a diagram schematically showing the configuration of m and a plate-side magnification correcting optical system Gp. Hereinafter, the configuration and operation of the mask-side magnification correction optical system Gm and the plate-side magnification correction optical system Gp will be described. First, referring to FIG. 3, the optical axis of the first catadioptric optical system HK1 is represented by AX1, and the optical axis of the second catadioptric optical system HK2 is represented by AX2. Further, from the center of the illumination area on the mask M defined by the field stop FS,
The path of a light beam that travels in the Z direction, passes through the center of the field stop FS, and reaches the center of the exposure area on the plate P also defined by the field stop FS is represented by a field center axis AX0.

The mask-side magnification correcting optical system Gm is arranged along the axis AX0 in the optical path between the first refractive optical system G1P and the second reflecting surface of the first right-angle prism PR1.
In the order from 1P, it is composed of a plano-convex lens 51 whose plane faces the first refractive optical system G1P side, and a plano-concave lens 52 whose plane faces the second reflection surface side of the first right-angle prism PR1.
That is, the optical axis of the mask-side magnification correcting optical system Gm is the axis A
X0, the convex surface of the plano-convex lens 51 and the plano-concave lens 52
Has a curvature of substantially the same size as that of the concave surface and is opposed to the concave surface at an interval.

The plate-side magnification correcting optical system Gp is
In the optical path between the second refracting optical system G2P and the second reflecting surface of the second right-angle prism PR2, a flat surface having a flat surface directed toward the second refracting optical system G2P in order from the second refracting optical system G2P along the axis AX0. The concave lens 53 and the second right-angle prism PR2
And a plano-convex lens 54 having a flat surface facing the reflection surface side. That is, the optical axis of the plate-side magnification correcting optical system Gp also coincides with the axis AX0, and the concave surface of the plano-concave lens 53 and the convex surface of the plano-convex lens 54 have curvatures of substantially the same size, and face each other with an interval. .

More specifically, the mask-side magnification correcting optical system Gm and the plate-side magnification correcting optical system Gp are connected to the axis AX0.
Are similar to each other only by changing the direction along. At least one of an interval between the plano-convex lens 51 and the plano-concave lens 52 constituting the mask-side magnification correcting optical system Gm and an interval between the plano-concave lens 53 and the plano-convex lens 54 constituting the plate-side magnification correcting optical system Gp. Is changed by a very small amount, the projection magnification of the projection optical unit is changed by a very small amount, and the position along the focusing direction of the image plane (along the axis AX0), that is, the focus position is also changed by a very small amount. I do. The mask-side magnification correcting optical system Gm is driven by a first driving unit Dm, and the plate-side magnification correcting optical system Gp is driven by a second driving unit Dp.

On the other hand, in the first parallel plane plate P1 as an image shifter, its parallel plane is in the reference state, and its parallel plane is the field center axis A.
It is set perpendicular to X0 and is configured to be rotatable by a small amount around the X axis. When the first plane-parallel plate P1 is rotated by a small amount around the X axis, an image formed on the plate P slightly moves (image shifts) in the Y direction on the XY plane. The second parallel plane plate P2 as the image shifter has its parallel plane set perpendicular to the visual field center axis AX0 in the reference state, and is configured to be rotatable by a small amount around the Y axis. When the second plane-parallel plate P2 is rotated by a small amount around the Y axis, the image formed on the plate P slightly moves (image shift) in the X direction on the XY plane. The first plane-parallel plate P1 is driven by a third driving unit DY, and the second plane-parallel plate P2 is driven by a fourth driving unit DX.

In this embodiment, the second right-angle prism PR2 is configured to function as an image rotator. That is, in the reference state, the second right-angle prism PR2 has an intersection line (ridge line) between the first reflection surface and the second reflection surface.
Are set so as to extend along the Y direction, and are configured to be rotatable by a small amount around the visual field center axis AX0 (around the Z axis). When the second right-angle prism PR2 is rotated by a minute amount around the axis AX0, the image formed on the plate P is minutely rotated (image rotation) around the axis AX0 (around the Z axis) on the XY plane. The second right-angle prism PR2 is a fifth prism.
It is configured to be driven by the driving unit DZ.
The first right-angle prism PR1 may be configured to function as an image rotator instead of the second right-angle prism PR2, or both the second right-angle prism PR2 and the first right-angle prism PR1 may function as an image rotator. May be configured.

Also, a lens that hermetically surrounds the space between a pair of lenses L1 and L2 disposed near the second concave reflecting mirror M2 (that is, disposed near the pupil plane of the projection optical unit). A control room LC is provided. The pressure in the closed space of the lens control room LC is configured to be adjustable by a pressure adjusting unit Dc. When the pressure in the closed space of the lens control room LC is changed by a minute amount, the focus position of the projection optical unit changes by a minute amount. Note that a lens control chamber may be provided so as to surround a space between the plurality of lenses arranged near the first concave reflecting mirror M1. Also,
A lens control chamber may be provided between the first concave reflecting mirror M1 or the second concave reflecting mirror M2 and an adjacent optical member (lens).

Hereinafter, in order to simplify the description of the basic configuration of each projection optical unit, first, a first parallel plane plate P1,
A state in which the second parallel plane plate P2, the mask-side magnification correcting optical system Gm, the plate-side magnification correcting optical system Gp, and the lens control room LC are not provided will be described. As described above, the pattern formed on the mask M is illuminated by the illumination light (exposure light) from the illumination system IL with substantially uniform illuminance. Light traveling along the -Z direction from the mask pattern formed in each illumination area on the mask M is deflected by 90 degrees by the first reflection surface of the first right-angle prism PR1, and then along the -X direction. First catadioptric optical system HK
Incident on 1.

The light incident on the first catadioptric optical system HK1 passes through the first dioptric optical system G1P to the first concave reflecting mirror M1.
Reach The light reflected by the first concave reflecting mirror M1 again enters the second reflecting surface of the first right-angle prism PR1 along the + X direction via the first refractive optical system G1P. -Z is deflected by 90 ° on the second reflecting surface of the first right-angle prism PR1.
The light traveling along the direction forms a primary image of the mask pattern near the field stop FS. The lateral magnification of the primary image in the X direction is +1 times, and the lateral magnification in the Y direction is -1 times.

The light that has traveled along the -Z direction from the primary image of the mask pattern is deflected by 90 degrees by the first reflecting surface of the second right-angle prism PR2, and then is subjected to the second catadioptric optical system along the -X direction. The light enters the system HK2. The light incident on the second catadioptric optical system HK2 reaches the second concave reflecting mirror M2 via the second refracting optical system G2P. Second concave reflecting mirror M2
Is reflected again by the second refractive optical system G2P,
The light is incident on the second reflection surface of the second right-angle prism PR2 along the + X direction.

At the second reflecting surface of the second right-angle prism PR2, 9
The light deflected by 0 ° and traveling along the −Z direction forms a secondary image of the mask pattern on the corresponding exposure area on the plate P. Here, the lateral magnification of the secondary image in the X direction and the lateral magnification in the Y direction are both +1 times. That is, the plate P is projected via each projection optical unit.
The mask pattern image formed thereon is an equal-size erect image, and each projection optical unit constitutes an equal-size erect system.

In the above-described first catadioptric optical system HK1, since the first concave reflecting mirror M1 is arranged near the rear focal point of the first dioptric system G1P, the mask M side and the field stop FS It is almost telecentric on the side.
Also, in the second catadioptric optical system HK2, the second concave reflecting mirror M2 is located near the rear focal position of the second dioptric optical system G2P.
Are arranged, so that they are almost telecentric on the field stop FS side and the plate P side. as a result,
Each projection optical unit is an optical system that is telecentric on substantially both sides (the mask M side and the plate P side).

Thus, the plurality of projection optical units PL1
Through the projection optical system PL composed of
On a plate stage (not shown in FIG. 1) PS, a mask pattern image is formed on a plate P supported in parallel with the XY plane via a plate holder. That is, as described above, since each of the projection optical units PL1 to PL5 is configured as a unity erecting system, a plurality of projection optical units PL1 to PL5 are arranged in the Y direction on the plate P, which is a photosensitive substrate, so as to correspond to each illumination area. In the trapezoidal exposure region, an equal-size erect image of the mask pattern is formed.

The mask stage MS is provided with a scanning drive system (not shown) having a long stroke for moving the stage along the X direction which is the scanning direction. Further, a pair of alignment driving systems (not shown) for moving the mask stage MS by a minute amount along the Y direction which is a scanning orthogonal direction and rotating the mask stage MS by a minute amount about the Z axis are provided. The position coordinates of the mask stage MS are measured and controlled by a laser interferometer MIF using a movable mirror.

A similar driving system is provided for the plate stage PS. That is, a scanning drive system (not shown) having a long stroke for moving the plate stage PS along the X direction which is the scanning direction, and moving the plate stage PS by a small amount along the Y direction which is the scanning orthogonal direction. In addition, a pair of alignment driving systems (not shown) for rotating by a minute amount around the Z axis are provided. The position coordinates of the plate stage PS are measured by a laser interferometer PIF using a movable mirror, and the position is controlled.

Further, as means for relatively positioning the mask M and the plate P along the XY plane,
A pair of alignment systems AL are arranged above the mask M. As alignment system AL, for example, mask M
Mask alignment mark and plate P formed on top
An alignment system of a method of obtaining a relative position with respect to a plate alignment mark formed thereon by image processing can be used.

In this embodiment, as shown in FIG. 1, the image detection system I attached to the plate stage PS
D is provided. The image detection system ID is the projection optical system PL
The index plate MP provided at substantially the same height position (the position along the Z direction) as the image plane of the image forming apparatus, and a plurality of the index plates MP arranged at intervals along the direction orthogonal to the scanning direction, that is, along the Y direction (this embodiment). And six detection units DY as described later. As shown in FIG. 4, each detection unit DY is connected to the index surface 4 of the index plate MP via each projection optical unit.
A relay optical system (imaging optical system) 42 for enlarging and forming a secondary image of the optical image formed on 1, and for detecting a secondary image formed via the relay optical system 42. C
And a two-dimensional imaging device 43 such as a CD.

Therefore, the enlarged image of the index SM formed on the index surface 41 is also transmitted through the relay optical system 42 to the CCD.
43 are formed on the detection surface. The relay optical system 42
Is provided with a sensitivity correction filter 44 for matching the spectral sensitivity of the CCD 43 with the spectral sensitivity of the resist applied on the plate P. The output from the CCD 43 of the plurality of detection units DY is
The signals are supplied to one control unit 45 common to Y. A display 46 for displaying image information detected by the CCD 43 of each detection unit DY is connected to the control unit 45. The control unit 45 includes the first driving unit D described above.
m, the second driving unit Dp, the third driving unit DY, the fourth driving unit D
X, the fifth drive unit DZ, and the pressure adjustment unit Dc are respectively controlled. The measurement operation in the image detection system ID and the control operation in the control unit 45 will be described later.

In this manner, the operation of the scanning drive system on the mask stage MS side and the scan drive system on the plate stage PS side allows the mask M and the plate P to be moved to the projection optical system PL including a plurality of projection optical units PL1 to PL5. By integrally moving in the same direction (X direction), the entire pattern region on the mask P is transferred (scanning exposure) to the entire exposure region on the plate P. The shape and arrangement of the plurality of trapezoidal exposure regions and the shape and arrangement of the plurality of trapezoidal illumination regions are described in detail in, for example, Japanese Patent Application Laid-Open No. 7-183212, and are duplicated. Is omitted.

FIG. 6 is a diagram for explaining the operation of detecting an optical image formed via each projection optical unit in the present embodiment. In the present embodiment, as shown in FIG. 6, images I1 to I5 of the aperture of the field stop FS are formed via the projection optical units PL1 to PL5. Field stop image I1
Reference numerals I5 denote trapezoidal exposure areas, respectively, which are arranged in a staggered manner in the scanning orthogonal direction (Y direction). here,
The central rectangular area of each of the exposure areas I1 to I5 is an area that does not contribute to the overlapping exposure, and the triangular areas at both ends thereof are areas that contribute to the overlapping exposure.

As shown in FIG. 6, the image detection system ID includes six detection units DY1 to DY6 arranged at equal intervals in the Y direction. The intervals between the detection units DY1 to DY6 correspond to the intervals along the Y direction of the partially overlapped exposure portions (triangular regions) in each exposure region. That is, each detection unit DY1 to DY6
As shown by the solid line in the figure, in the state where the six detection units DY1 to DY6 and the three exposure regions I1, I3, and I5 linearly arranged in the Y direction are aligned along the X direction, The first detection unit DY1 and the second detection unit DY2 cover a pair of triangular regions of the first exposure region I1 formed via the first projection optical unit PL1, respectively, and the third detection unit DY3 and the fourth detection unit DY4 respectively covers a pair of triangular regions of the third exposure region I3 formed via the third projection optical unit PL3, and includes a fifth detection unit DY5 and a sixth detection unit DY5.
The detection unit DY6 is set so as to cover a pair of triangular regions of the fifth exposure region I5 formed via the fifth projection optical unit PL5.

Therefore, the six detection units DY1-DY
When the plate stage PS is moved by a predetermined distance in the X direction from the state where DY6 and the three exposure regions I1, I3, and I5 are aligned, as shown by a broken line in the drawing,
Six detection units DY1 to DY6 and two exposure areas I
2 and I4 can be aligned. In this state, the second detection unit DY2 and the third detection unit DY3 cover a pair of triangular regions of the second exposure region I2 formed via the second projection optical unit PL2, respectively. The fifth detection unit DY5 covers a pair of triangular regions of the fourth exposure region I4 formed via the fourth projection optical unit PL4. At this time, the first detection unit DY1 and the sixth detection unit DY6 do not perform the detection operation.

Incidentally, the six detection units DY1 to DYD
The mutual alignment of Y6, that is, the mutual alignment along the X direction, the Y direction, and the Z direction is performed by one index plate M
This is performed based on the index SM provided for P. That is, on the index plate MP, index marks arranged at predetermined equal intervals along the Y direction are provided at six locations.
For example, by matching the center of each index mark image detected by each detection unit with the detection center of each detection unit, mutual alignment along the X direction and the Y direction is performed. Further, mutual alignment along the Z direction is performed based on, for example, the contrast of the index mark image detected by each detection unit.

In the present embodiment, when detecting an optical image formed via each projection optical unit, the neutral density filter 6 is inserted near the pupil plane of the relay lens system 4. This depends on the magnification of the relay optical system 42 of the detection unit DY and the detection sensitivity of the CCD 43.
It is better to continuously detect the optical image by the illumination light of about 1% of the exposure power of mW / cm ² for a predetermined time, and to detect the optical image by the exposure light instantaneously in a short time using a high-speed shutter or the like. This is because an averaging effect over time can be obtained rather than doing so. This neutral density filter may be provided in the relay optical system 42 of the detection unit DY. However, it is necessary to take into consideration thermal drift and thermal deformation that can occur when a strong exposure light is applied to the index plate MP and the detection unit DY. Then, in order to avoid deterioration of the detection accuracy, the neutral density filter is connected to the illumination system I.
It is preferably provided in L.

In other words, in the present embodiment, since the neutral density filter 6 is provided in the illumination system IL, it is possible to avoid deterioration in detection accuracy due to thermal drift or thermal deformation. However, when arranging the neutral density filter near the light source 1 in the illumination system IL, it is necessary to consider thermal factors. That is, the absorption type neutral density filter is expected to be easily broken by irradiation heat. For this reason, the neutral density filter 6 is configured to be dimmed by controlling the thickness of a metal film such as a Cr (chromium) film, is configured to increase reflected light by a dielectric film, or is made of Cr or the like. It is preferable that a minute dot pattern or the like is randomly arranged on a glass substrate and set to a predetermined transmittance.

When the light guide 7 is provided in the illumination system IL as in the present embodiment, a part of the light incident on the light guide 7 is blocked by the light shielding portion without using a neutral density filter. It can also be configured as follows. However, due to the characteristics of the fiber, although the intensity distribution of light passing through the inside is slightly reduced, its angular direction is preserved to some extent, so the light shielding portion is configured so as not to change the angular distribution of light incident on the fiber. It is desirable.

In the state where the light is dimmed by the operation of the neutral density filter 6, a test mask on which a predetermined test pattern is formed is set on the mask stage MS.
The image position, image rotation, magnification, aberration, and the like in each projection optical unit are measured. Here, various line and space patterns are formed as mask patterns in each illumination region corresponding to each projection optical unit on the test mask. That is, the X direction in each illumination area,
Line and space patterns having various pitches are formed along the Y direction, a radial direction around the visual field center axis AX0, and a circumferential direction about the visual field center axis AX0.

The measurement of the image position, image rotation, magnification, aberration and the like in each projection optical unit will be briefly described below. First, the image position, image rotation, and magnification in each projection optical unit are measured by detecting the positions of the mask pattern images at both ends of each exposure area. Also,
The focus position of each projection optical unit is measured by detecting the contrast of the mask pattern image while slightly moving the plate stage PS in the Z direction. Further, the spherical aberration in each projection optical unit is measured by detecting the focus positions of a plurality of mask patterns (line and space patterns) having different line widths (different pitches). Here, the spherical aberration is an aberration based on the visual field center axis AX0. Hereinafter, the same applies to other rotationally symmetric aberrations and non-rotationally symmetric aberrations.

The coma aberration in each projection optical unit is measured by detecting a difference between line widths at both ends of a line and space pattern having a pitch close to the resolution limit. Further, the field curvature in each projection optical unit is measured by detecting an average of a focus position of a meridional image plane and a focus position of a sagittal image plane of a mask pattern of each image height having a pitch close to its resolution limit. Is done. The astigmatism in each projection optical unit is measured by detecting the difference between the focus position of the meridional image plane and the focus position of the sagittal image plane of the mask pattern at each image height having a pitch close to its resolution limit. Is done. Further, the distortion in each projection optical unit is measured as a component obtained by detecting the positions of a plurality of mask patterns within the range of the field stop image and subtracting a linear component corresponding to the image shift from its fluctuation component. Hereinafter, non-rotationally symmetric aberrations such as eccentric aberrations,
The image position and image rotation of the field stop image (exposure area) are measured in the same manner.

As described above, in the control unit 45, based on the detection information from the CCD 43 in each detection unit DY, the image position, image rotation, magnification, focus position, rotationally symmetric aberration, and non-rotationally symmetrical in each projection optical unit. aberration,
The image position and image rotation of the field stop image are measured. As a result, if necessary, the control unit 45 sets the first drive unit Dm
And the mask-side magnification correcting optical system Gm via the second driving unit Dp
By driving the plate-side magnification correction optical system Gp, the magnification fluctuation in each projection optical unit is adjusted (corrected). The control unit 45 drives the first parallel plane plate P1 or the second parallel plane plate P2 as an image shifter via the third drive unit DY or the fourth drive unit DX as necessary, The fluctuation of the image position in each projection optical unit is corrected.

Further, the control section 45 corrects the image rotation in each projection optical unit by driving the second right-angle prism PR2 as an image rotator via the fifth driving section DZ as necessary. The control unit 45
Corrects the fluctuation of the focus position in each projection optical unit by changing the pressure in the lens control room LC by a very small amount via the pressure adjusting unit Dc as necessary. Further, the control unit 45 may rotate the lens effective for correcting each aberration along the optical axis direction or the direction orthogonal to the optical axis, or may incline the lens with respect to the optical axis, as necessary, so that the lens is rotationally symmetric. Correct aberrations and non-rotationally symmetric aberrations. Further, the control unit 45 corrects the fluctuation of the image position of the field stop image and the image rotation by moving the field stop FS along the XY plane or rotating the field stop FS around the Z axis as necessary.

In adjusting the optical characteristics of each projection optical unit, it is ideal that all the optical characteristics of each projection optical unit are corrected to a desired state. However, in practice, it is difficult to correct all the optical characteristics of each projection optical unit to a desired state, and in order to realize a good overlapping exposure, the projection optical units adjacent to each other in a partially overlapping portion of the exposure area are required. It is preferable that the optical characteristics be set so as to change in accordance with substantially the same tendency. More specifically, for example, it is preferable that the direction of curvature of field is set to be opposite between the adjacent projection optical units, and that the image planes of the partially overlapping portions of the exposure regions be substantially the same between the adjacent projection optical units. . Also, in the case of various aberrations such as coma, for example, the variation of the aberration is continuous from the non-overlapping portion (rectangular portion at the center) to the partially overlapping portion (triangular portion at both ends) of the exposure area. It is preferable that the correction be made so as to be smooth.

In each of the projection optical units, there is a possibility that the focus position, magnification, aberration, and the like may fluctuate due to thermal deformation of the lens due to light irradiation during exposure or thermal deformation of the deflecting member. In this case, it is preferable to adjust (correct) the fluctuations of these optical characteristics as needed by referring to a data table or the like obtained in advance using a detection system while monitoring the amount of irradiation light to each projection optical unit. .

As described above, in this embodiment, the six detection units DY1 to DY1
The optical characteristics of the three projection optical units PL1, PL3 and PL5 are measured via Y6. Next, the plate stage PS is moved in the scanning direction (X direction), and the four detection units DY2 to DY2
Two projection optical units PL2 and PL via Y5
4 is measured. As a result, the optical characteristics of each projection optical unit can be measured in a short time.

The detection of the optical image in each detection unit DY is performed while each detection unit DY is kept stationary, that is, while the plate stage PS is kept stationary. Of course, the plate stage PS moves to detect the next optical image, but the operation of detecting the optical image itself is performed in a stationary state. In this sense, each detection unit DY
Is a stationary sensor, which performs image detection without scanning the large plate stage PS. On the other hand, in the conventional slit scan type sensor, it is necessary to perform high-precision scanning of about several tens μm to several hundred μm when detecting an image. Very disadvantageous from. In other words, in the present embodiment, despite the provision of the large plate stage PS, a scanning operation is not required for image detection, so that the detection time and, consequently, the measurement time are very short.

Further, even though the detection accuracy itself is substantially the same between the static sensor of the present embodiment and the conventional slit scan type sensor, if the number of times that can be measured within the same time is compared, the static sensor of the present embodiment can be compared. Type sensors are much more advantageous. As a result, in the static sensor according to the present embodiment, high measurement accuracy can be realized by an averaging effect based on a large amount of measurement information.

Further, even in the case where the position information is temporarily lost due to the runaway of the plate stage, for example, in this embodiment, the position of each detection unit is adjusted while directly monitoring the detection image and the index image on the display 46. And preparations for detection of the optical image and measurement of the optical characteristics can be promptly and smoothly proceeded. Further, in this embodiment, since the detected image can be directly monitored on the display 46, it is very advantageous from the viewpoint other than the measurement time and the measurement accuracy. Also, by using this image detection system, the position of the field stop (image position) in each projection optical unit can be obtained in cooperation with the interferometer. The position of the aperture can be adjusted.

The optical member and each stage in the present embodiment shown in FIG. 1 are electrically, mechanically or optically connected so as to achieve the above-described functions, thereby achieving the exposure according to the present embodiment. The device can be assembled.
Then, the mask is illuminated by the illumination system IL (illumination step), and a transfer pattern formed on the mask is scanned and exposed on the photosensitive substrate using the projection optical system PL including the projection optical units PL1 to PL5 (exposure step). )
Microdevices (semiconductor elements, liquid crystal display elements, thin film magnetic heads, etc.) can be manufactured. Hereinafter, by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the present embodiment shown in FIG. 1,
An example of a technique for obtaining a semiconductor device as a micro device will be described with reference to a flowchart of FIG.

First, in step 301 of FIG.
A metal film is deposited on the wafers of the lot. In the next step 302, a photoresist is applied on the metal film on the l lot of wafers. Then, step 303
1, the image of the pattern on the mask is sequentially exposed and transferred to each shot area on the wafer of the lot through the projection optical system (projection optical unit) using the exposure apparatus shown in FIG. Thereafter, in step 304, the photoresist on the one lot of wafers is developed, and in step 305, etching is performed on the one lot of wafers using the resist pattern as a mask, thereby forming a pattern on the mask. A corresponding circuit pattern is formed in each shot area on each wafer. Thereafter, a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like. According to the above-described semiconductor device manufacturing method, a semiconductor device having an extremely fine circuit pattern can be obtained with good throughput.

In the exposure apparatus shown in FIG. 1, by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate), a liquid crystal display element as a micro device can be obtained. Less than,
An example of the technique at this time will be described with reference to the flowchart in FIG. In FIG. 8, a pattern forming step 4
In step 01, a so-called optical lithography step of transferring and exposing a mask pattern to a photosensitive substrate (a glass substrate coated with a resist) using the exposure apparatus of the present embodiment is executed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to various steps such as a developing step, an etching step, and a reticle peeling step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.

Next, in the color filter forming step 402, three colors corresponding to R (Red), G (Green), and B (Blue)
Many sets of dots are arranged in a matrix,
Alternatively, a color filter in which a set of three stripe filters of R, G, and B are arranged in a plurality of horizontal scanning line directions is formed. Then, after the color filter forming step 402, a cell assembling step 403 is performed. In the cell assembly step 403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step 401, the color filter obtained in the color filter formation step 402, and the like. In the cell assembling step 403, for example, a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402, and a liquid crystal panel (liquid crystal cell) is formed. ) To manufacture.

Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display device, a liquid crystal display device having an extremely fine circuit pattern can be obtained with high throughput.

In the above-described embodiment, an example is shown in which a two-dimensional CCD is used as an image sensor. However, the present invention is not limited to this.
Can also be used. Also in this case, the one-dimensional C
The image detection itself on the CD is performed with the plate stage kept stationary.

In the above-described embodiment, the six detection units are arranged along the Y direction. However, various modifications can be made to the number and arrangement of the six detection units. In this regard, for example, image detection can be performed by a pair of detection units spaced at intervals along the Y direction, and in some cases, image detection can be performed by a single detection unit.

Further, in the above-described embodiment, the present invention is applied to the multi-scan type projection exposure apparatus in which each projection optical unit has a pair of imaging optical systems, but each projection optical unit has one or three projection optical units. The present invention is also applicable to a multi-scan type projection exposure apparatus having the above-described imaging optical system.

In the above-described embodiment, the present invention is applied to the multi-scan type projection exposure apparatus in which each projection optical unit has a catadioptric imaging optical system. However, the present invention is not limited to this. For example, the present invention can be applied to a multi-scan type projection exposure apparatus having a refraction type image forming optical system.

Further, in the above-described embodiment, an ultra-high pressure mercury lamp is used as a light source. However, the present invention is not limited to this, and another appropriate light source can be used. That is, in the present invention, the exposure wavelength is not particularly limited to g-line, h-line, i-line and the like.

In the above-described embodiment, the present invention is described with respect to a multi-scan type projection exposure apparatus which performs scanning exposure while moving a mask and a photosensitive substrate with respect to a projection optical system composed of a plurality of projection optical units. are doing. However, the present invention can also be applied to a projection exposure apparatus that performs collective exposure without moving a mask and a photosensitive substrate to a projection optical system including a plurality of projection optical units. Further, even in a general exposure apparatus having a single projection optical system, the effect of the present invention can be obtained by installing the dimming means.

[0083]

As described above, according to the present invention,
An exposure apparatus capable of quickly and accurately measuring the optical characteristics of a large number of projection optical units and performing optical adjustment with high precision can be realized. Further, according to the present invention, it is possible to realize an exposure apparatus capable of measuring and optically adjusting optical characteristics of a projection optical system with high accuracy while substantially avoiding thermal drift or the like due to exposure light exposure. it can.

Further, by performing good exposure using the exposure apparatus constructed according to the present invention, a high-precision liquid crystal display element, for example, as a large-area and good microdevice can be manufactured.

[Brief description of the drawings]

FIG. 1 is a perspective view schematically showing an overall configuration of an exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram schematically showing a configuration of an illumination system in the exposure apparatus of FIG.

FIG. 3 is a view schematically showing a configuration of each projection optical unit forming a projection optical system in the exposure apparatus of FIG. 1;

FIG. 4 is a diagram schematically showing a configuration of an image detection system provided in the exposure apparatus of FIG.

5 is a diagram schematically showing a configuration of a mask-side magnification correcting optical system Gm and a plate-side magnification correcting optical system Gp of FIG. 3;

FIG. 6 is a diagram illustrating an operation of detecting an optical image formed via each projection optical unit in the present embodiment.

FIG. 7 is a flowchart of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the present embodiment.

FIG. 8 is a flowchart of a method for obtaining a liquid crystal display element as a micro device by forming a predetermined pattern on a plate using the exposure apparatus of the present embodiment.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 light source 2 elliptical mirror 3 reflecting mirror 4 relay lens system 6 neutral density filter 7 light guide 9 fly-eye integrator 11 condenser lens system M mask PL projection optical system PL1 to PL5 projection optical unit P plate ID image detection system MP index plate Gm , Gp magnification correction optical system Gf focus correction optical system LC lens control room

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2H052 BA02 BA03 BA09 BA12 2H097 BA10 EA01 GB00 KA03 KA29 LA10 LA12 5F046 AA22 BA05 CA02 CB02 CB04 CB05 CB06 CB08 CB10 CB12 CB19 CB20 CB23 CB25 CC01 CC02 DC13 DB03

Claims (15)

[Claims] An illumination optical system for illuminating a mask on which a predetermined pattern is formed, and a projection optical system having a plurality of projection optical units arranged along a predetermined direction. An exposure apparatus for projecting and exposing a pattern image of the mask onto a photosensitive substrate through an exposure apparatus, comprising: an image detection system for detecting an image formed via each of the plurality of projection optical units. Exposure apparatus. 2. An image detection system comprising: a relay optical system for forming a secondary image based on light from an image formed via each projection optical system; and a relay optical system formed via the relay optical system. 2. An exposure apparatus according to claim 1, further comprising an image pickup device for detecting said secondary image. 3. A method for measuring at least one optical characteristic of an image position, an image rotation, a magnification, a rotationally symmetric aberration, and a non-rotationally symmetric aberration in each projection optical unit based on an output of the image detection system. The exposure apparatus according to claim 1, further comprising a measurement system. 4. A substrate stage for two-dimensionally moving the photosensitive substrate along an image plane of the projection optical system, wherein the image detection system is attached to the substrate stage. The exposure apparatus according to claim 1, wherein: 5. The exposure apparatus according to claim 4, wherein the image detection system has a pair of image detection systems spaced along the predetermined direction. 6. The image detection system has an index plate positioned at substantially the same position as the image plane of the projection optical system and provided with an index for use in mutual alignment of the pair of image detection systems. The exposure apparatus according to claim 5, wherein: 7. The plurality of projection optical units are configured to form an exposure area that partially overlaps with an adjacent projection optical unit, and the pair of image detection systems includes a part in the exposure area. The exposure apparatus according to claim 5, wherein the exposure apparatus has an interval corresponding to an interval between overlapping portions. 8. The image processing apparatus according to claim 1, further comprising adjusting means for adjusting optical characteristics of at least one of the plurality of projection optical units based on an output from the image detection system. The exposure apparatus according to claim 1. 9. The projection optical unit has a field stop for limiting each exposure field, and the position of the field stop in each projection optical unit is measured by the image detection system. The exposure apparatus according to any one of claims 1 to 8. 10. An exposure apparatus comprising: an illumination optical system for illuminating a mask on which a predetermined pattern is formed; and a projection optical system for projecting and exposing a pattern image of the mask onto a photosensitive substrate. An image detection system for detecting an image formed via a projection optical system via an image sensor; and a dimming device for dimming incident light to the image detection system according to the detection sensitivity of the image sensor. An exposure apparatus comprising: 11. The exposure apparatus according to claim 10, wherein the dimming unit has a metal film, a dielectric film, or a light-shielding fine pattern formed on a transparent substrate. 12. An exposure step of exposing the pattern of the mask to the photosensitive substrate using the exposure apparatus according to claim 1, and a development step of developing the exposed substrate. A method for manufacturing a micro device, comprising: 13. An illumination optical system for illuminating a mask on which a predetermined pattern is formed, and a projection optical system having a plurality of projection optical units arranged along a predetermined direction. A manufacturing method of an exposure apparatus for projecting and exposing the pattern image of the mask onto the photosensitive substrate through a detecting step of detecting an image formed through each of the plurality of projection optical units; and Based on the obtained information, the image position, image rotation, magnification, rotational symmetric aberration,
And a measuring step of measuring at least one optical characteristic of the non-rotationally symmetric aberration, and an adjusting step of optically adjusting each projection optical unit based on the information obtained in the measuring step. Production method. 14. The plurality of projection optical units are configured to form an exposure area that partially overlaps with an adjacent projection optical unit, and the adjusting step is performed in a part where the exposure area partially overlaps. 14. The manufacturing method according to claim 13, wherein the optical characteristics of adjacent projection optical units are set to change according to substantially the same tendency. 15. An exposure step of exposing a pattern of a mask to a photosensitive substrate via a projection optical system having a plurality of projection optical units arranged along a predetermined direction, and a development step of developing the exposed substrate. In the method for manufacturing a micro device including: a detection step of image-detecting an image formed via each of the plurality of projection optical units; and, based on the information obtained in the detection step, Image position, image rotation, magnification, rotational symmetric aberration,
And a measuring step of measuring at least one optical characteristic of the non-rotationally symmetric aberration, and an adjusting step of optically adjusting each projection optical unit based on the information obtained in the measuring step. Micro device manufacturing method.