JP2002015857A - Light emitting device - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To provide a light emitting wavelength that is much narrower than that of a conventional organic EL light emitting device, has excellent wavelength selectivity, and can emit light with directivity. Provided is a light-emitting device that can be used for communication and the like. SOLUTION: A light emitting device 1000 integrally includes a light emitting element portion 100 and a waveguide portion 200 for transmitting light from the light emitting element portion 100 on a substrate 10. Light emitting element section 10
Reference numeral 0 denotes a transparent anode 20 formed on the substrate 10 and constituting a light propagation portion, an optical member 12 formed on a part of the anode 20, and an insulating layer 16 having an opening 16a facing the optical member 12. And at least a part of the opening 16 of the insulating layer 16.
a, the light emitting layer 14 and the cathode 22. The waveguide section 200 forms a two-dimensional photonic band gap or a part thereof.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using EL (electroluminescence).

[0002]

2. Description of the Related Art For example, a semiconductor laser is used as a light source used in an optical communication system. A semiconductor laser is preferable because it has excellent wavelength selectivity and can emit a single-mode light, but requires many times of crystal growth and is not easy to fabricate.
Further, the semiconductor laser has a drawback that the light emitting material is limited and light of various wavelengths cannot be emitted.

Further, the conventional EL light emitting device has a wide spectral width of an emission wavelength and is applied to some uses such as a display body, but is used for an application requiring light with a narrow spectral width such as optical communication. Was unsuitable.

It is an object of the present invention to provide a light emitting device having a spectral width of an emission wavelength which is much narrower than that of a conventional EL light emitting device, and has directivity, which can be applied not only to a display but also to optical communication.
A light emitting device is provided.

[0005]

(First Light Emitting Device) A first light emitting device according to the present invention comprises: a substrate; a light emitting element portion; a waveguide portion for transmitting light from the light emitting element portion; Including
The light-emitting element portion is a light-emitting layer capable of emitting light by electroluminescence, a pair of electrode layers for applying an electric field to the light-emitting layer, a light propagation portion for transmitting light generated in the light-emitting layer, An insulating layer which is arranged between the pair of electrode layers and has an opening in a part thereof and which can function as a current confinement layer which defines a region through which current supplied to the light emitting layer flows through the opening; And, an optical member for light propagating in the light propagating portion, and the waveguide portion,
The two-dimensional photonic band gap or a part thereof is formed integrally with the light emitting element portion, and light generated in the light emitting layer emits two-dimensional spontaneous light by the two-dimensional photonic band gap. Is constrained and propagates in the waveguide section.

According to this light emitting device, electrons and holes are injected into the light emitting layer from a pair of electrode layers, ie, a cathode and an anode, and the electrons and holes are recombined in the light emitting layer to form molecules. Light is generated when returning from the excited state to the ground state. The generated light propagates in the optical member and then propagates in the waveguide. At this time, only light in a wavelength band corresponding to the two-dimensional photonic band gap can propagate in the waveguide. Therefore, by defining the width of the energy level caused by the defect, the loss of light propagating in the waveguide can be reduced.

Further, the light emitting device of the present invention can be applied to both cases of using light of a single wavelength and cases of using light of multiple wavelengths. In the case where light of multiple wavelengths is coupled and guided to the outside, the degree of freedom of design is generally reduced as compared with the case of using light of a single wavelength, and it may be necessary to provide a bend in the waveguide. However, if the waveguide portion is bent, the loss at that portion increases. However, according to the light emitting device of the present invention, even if the waveguide portion is bent, light loss in that portion can be reduced, so that the degree of freedom in element design can be increased.

In the present invention, the light propagating portion is a portion of the light emitting element portion and a portion for supplying the light obtained in the light emitting layer of the light emitting element portion to the waveguide portion, and at least an optical member. And a member (for example, one electrode layer) for coupling to the core layer of the waveguide section. This applies to a second light emitting device described later.

Further, according to the first light emitting device, since the insulating layer functions as a current confinement layer in the light emitting element portion, a region of a current supplied to the light emitting layer can be defined. Therefore, current intensity and current distribution can be controlled in a region where light emission is desired, and light can be generated with high luminous efficiency.

In the case where the insulating layer functions as a cladding layer, assuming a waveguide including a light emitting layer as a core layer and an insulating layer as a cladding layer, the core layer is formed of the two-dimensional photoconductor. Constitute the nick band gap or a part thereof. In this case, by defining the opening of the insulating layer, it is possible to control the waveguide mode of the light propagated to the waveguide through the light propagation unit. By setting the width of the light emitting layer and the width of the core layer to appropriate values, light in a desired mode is propagated from the light emitting element portion to the waveguide portion side with excellent coupling efficiency. In the light-emitting element portion, the light-emitting layer in the current confinement layer formed of the insulating layer may not always be in a uniform light-emitting state. It is preferable that the design values of the respective members such as the light emitting layer, the light propagation portion, and the waveguide portion are optimally adjusted so that the coupling efficiency of the respective members is good based on the width (2a).

The light emitting device preferably has a waveguide mode of about 0 to 1000, particularly about 0 to 10 for communication use. If the light guide mode of the light in the light emitting layer can be defined in this way, light of a predetermined guide mode can be obtained efficiently.

As described above, according to the present invention, it is possible to provide a light-emitting device with low light loss and high yield.

(Second Light Emitting Device) A second light emitting device according to the present invention integrally includes a light emitting element section and a waveguide section for transmitting light from the light emitting element section on a substrate, The light-emitting element portion is a light-emitting layer capable of emitting light by electroluminescence, a pair of electrode layers for applying an electric field to the light-emitting layer, a light propagation portion for transmitting light generated in the light-emitting layer, An insulating layer disposed in contact with the light propagation section and capable of functioning as a cladding layer; and an optical member for light propagating through the light propagation section, wherein the waveguide section includes at least one of the light propagation sections. A core layer integral with the portion, and a cladding layer integral with the insulating layer, wherein the core layer forms a two-dimensional photonic band gap or a part thereof, and the light emitting layer The light generated by the two-dimensional Spontaneous emission in two dimensions is constrained by photonic band gap propagating the waveguide portion.

According to the second light emitting device, at least a part of the light propagation section of the light emitting element section and the core layer of the waveguide section are integrally continuous, and the insulating layer (cladding layer) of the light emitting element section is formed. )
And the cladding layer of the waveguide section are integrally continuous with each other, so that the light emitting element section and the waveguide section are optically coupled with high coupling efficiency, and light can be efficiently propagated.

In the case of this structure, a material that functions as a cladding layer for the light propagation portion is selected for the insulating layer. Further, according to the light emitting device having this configuration, at least a part of the light propagation part of the light emitting element part and the core layer of the waveguide part are:
Since film formation and patterning can be performed in the same process, there is an advantage that manufacturing is simplified. Similarly, since the insulating layer (cladding layer) of the light emitting element portion and the cladding layer of the waveguide portion can be formed and patterned in the same process, there is an advantage that the manufacturing is simplified.

According to the present invention, the same effects as those of the first light emitting device are obtained. That is, since the waveguide section has a two-dimensional photonic band gap,
A light-emitting device with low light loss and high yield can be provided.

In the first and second light emitting devices, the following modes can be adopted.

(1) It is preferable that the core layer constituting the waveguide section includes a defect region and a non-defect region, and the defect region is formed by forming a defect portion continuously. According to this configuration, the light wave is localized at the defective portion,
Light generated in the light emitting layer propagates through the defect. That is, in the core layer constituting the waveguide section, the defect region functions as a core, and the non-defect region functions as a clad. Therefore, according to this configuration,
Since light generated in the light emitting layer propagates preferentially in the defect region which is a core, loss of light propagating in the waveguide portion can be reduced.

(2) The optical member constitutes a two-dimensional photonic band gap or a part thereof, and has a defect set such that an energy level caused by the defect exists in a predetermined emission spectrum. It is preferable that the light generated in the light emitting layer has a part, and the two-dimensional spontaneous emission is restricted by the two-dimensional photonic band gap constituting the optical member, and the light is emitted.

According to this configuration, of the light generated in the light emitting layer, only light in a wavelength band corresponding to the two-dimensional photonic band gap constituting the optical member can propagate through the optical member. Therefore, by defining the width of the energy level caused by the defect, it is possible to obtain light with a very narrow emission spectrum width and spontaneous emission in which two-dimensional spontaneous emission is restricted in high yield. Such a device can be applied not only to a display but also to optical communication and the like.

(3) The insulating layer functions as a current confinement layer and a cladding layer, and the opening formed in the insulating layer has a slit shape extending in a direction in which light generated in the light emitting layer is emitted. desirable. Further, it is preferable that at least a part of the light emitting layer exists in an opening formed in the insulating layer. According to this configuration, the region of the light emitting layer to which a current is to be supplied and the region defined by the current constriction layer can be positioned in a self-aligned manner.

(4) Preferably, one of the pair of electrode layers is made of a transparent conductive material, and the electrode layer can also function as at least a part of the light propagation portion and the core layer. Further, it is desirable that the core layer constituting the waveguide portion is continuous at least in a region where the optical member is formed, and the optical member is desirably formed in the light propagation portion.

(5) The core layer constituting the waveguide section has at least one of first, second, and third directions.
One-dimensional or two-dimensional with a periodic refractive index distribution in two directions
Any material that can form a two-dimensional photonic band gap may be used. The core layer constituting the waveguide section may be formed of a multilayer film structure, a columnar or other columnar structure, or a combination of these structures.

Preferred examples of the core layer constituting the waveguide section include the following.

(A) The core layer constituting the waveguide section has a periodic refractive index distribution in first and second directions, and has a columnar first medium layer arranged in a square lattice. And a second medium layer formed between the first medium layers. With this core layer, a photonic band gap in which spontaneous emission in two directions is restricted in two dimensions can be formed, and as a result, light with a very narrow emission spectrum width can be obtained with high efficiency.

(B) The core layer constituting the waveguide section has a periodic refractive index distribution in the first, second, and third directions in one plane, and is, for example, triangular lattice-shaped or honeycomb-shaped. It has a columnar first medium layer arranged in a shape, and a second medium layer formed between the first medium layers. With this core layer, a photonic band gap in which spontaneous emission in at least three directions is restricted in two dimensions can be formed, and as a result, light with a very narrow emission spectrum width can be obtained with high efficiency.

In the case of the above (A) or (B), the non-defect region constituting the core layer has the two-dimensional photonic band gap including the first medium layer and the second medium layer. The defect region included in the core layer may be formed of the same material as the second medium layer.

(6) The optical member has a periodic refractive index distribution in at least one of the first, second, and third directions, and has a one-dimensional or two-dimensional photonic band gap. What can be configured can be used.
The optical member can be composed of a diffraction grating, a multilayer structure, a column or other columnar structure, or a combination of these structures.

Preferred examples of the optical member include the following.

(A) The optical member has a first medium layer and a second medium layer which have a periodic refractive index distribution in a first direction and are arranged alternately. When such an optical member is used, the light emitting device according to the present invention provides a one-dimensional photonic band gap that can form a two-dimensional photonic band gap in combination with a photonic band gap formed by the optical member. Having. Due to the optical member and the one-dimensional photonic band gap, light having a very narrow emission spectrum width in which spontaneous emission in two-dimensional directions is restricted can be obtained with high efficiency.

(B) The optical member has a columnar first medium layer having a periodic refractive index distribution in first and second directions, and arranged in a square lattice. A second medium layer formed between the layers. With this optical member, a photonic band gap in which spontaneous emission in two directions is restricted in two dimensions can be formed, and as a result, light with a very narrow emission spectrum width can be obtained with high efficiency.

(C) The optical member has a first,
A column-shaped first medium layer having a periodic refractive index distribution in the second and third directions and arranged, for example, in a triangular lattice or honeycomb shape, and is formed between the first medium layers. Second
Medium layer. With this optical member, a photonic band gap in which spontaneous emission in at least three directions is restricted in two dimensions can be formed, and as a result, light with a very narrow emission spectrum width can be obtained with high efficiency.

In the above-mentioned case (5) or (6), the core layer or the first medium layer constituting the optical member is desirably formed perpendicular to the substrate. It is desirable to be formed integrally with one of the pair of electrode layers.

Further, it is preferable that the first medium layer constituting the core layer or the optical member is formed integrally with the insulating layer or the light emitting layer.

(7) A layer may be provided for restricting the propagation of the light propagating in the light propagating portion in a direction in which the propagation of the light is not restricted by the photonic band gap.

In this case, the layer that regulates the propagation of light is
It is desirable to be a clad layer or a dielectric multilayer film.

(8) The light emitting layer preferably contains an organic light emitting material as a light emitting material. By using an organic light emitting material, a wider range of materials can be selected than in the case of using a semiconductor material or an inorganic material, and light of various wavelengths can be emitted.

(9) The light emitting device described above can take various modes. For example, representative modes will be described below.

In a light-emitting device according to one embodiment of the present invention, the light-emitting element portion includes a transparent anode formed on the substrate and capable of functioning as at least a part of the light propagation portion; The formed optical member, the insulating layer having an opening facing the optical member, at least a part of the light emitting layer present in the opening of the insulating layer, and a cathode,
including.

In this case, the waveguide portion is formed on the substrate, and has a core layer optically continuous with the anode, and a clad covering the exposed portion of the core layer and optically continuous with the insulating layer. And a layer.

Next, some of the materials that can be used for each part of the light emitting device according to the present invention will be described. These materials are only a part of known materials, and it is a matter of course that materials other than those exemplified can be selected.

(Light Emitting Layer) The material of the light emitting layer is selected from known compounds in order to obtain light having a predetermined wavelength. The material of the light emitting layer may be either an organic compound or an inorganic compound, but is preferably an organic compound from the viewpoint of abundant types and film-forming properties.

Examples of such an organic compound include, for example,
Aromatic diamine derivatives (TPD), oxydiazole derivatives (PBD), oxydiazole dimers (OXD) disclosed in JP-A-10-153967
-8), distilylylene derivative (DSA), beryllium-benzoquinolinol complex (Bebq), triphenylamine derivative (MTDATA), rubrene, quinacridone, triazole derivative, polyphenylene, polyalkylfluorene, polyalkylthiophene, azomethine zinc complex, Porphyrin zinc complex, benzoxazole zinc complex, phenanthroline europium complex and the like can be used.

Examples of the material for the organic light emitting layer include JP-A-63-70257, JP-A-63-175860, JP-A-2-135361 and JP-A-2-13535.
No. 9, No. 3-152184, and further, No. 8-
Known materials such as those described in JP-A-248276 and JP-A-10-153967 can be used.
These compounds may be used alone or as a mixture of two or more.

As inorganic compounds, ZnS: Mn (red region), ZnS: TbOF (green region), SrS: C
u, SrS: Ag, SrS: Ce (blue region), and the like.

(Optical Waveguide) Here, the optical waveguide includes a layer functioning as a core and a layer having a smaller refractive index than the core and functioning as a clad. Specifically, these layers include a light propagation portion (core layer) and an insulating layer (cladding layer) of the light emitting element portion, a defect region and a non-defect region constituting the core layer, and the like. Known layers of inorganic and organic materials can be used for the layers constituting the optical waveguide.

Representative inorganic materials include, for example,
As disclosed in JP-A-5-273427, Ti
O_Two, TiO_Two-SiO_TwoMixture, ZnO, Nb_TwoO_Five, S
i_ThreeN _Four, Ta_TwoO_Five, HfO_TwoOr ZrO_TwoFor example
Can be

As typical organic materials, known resins such as various thermoplastic resins, thermosetting resins, and photocurable resins can be used. These resins are appropriately selected in consideration of a method of forming a layer and the like. For example, by using a resin that can be cured by at least one of heat and light, a general-purpose exposure apparatus, a baking furnace, a hot plate, or the like can be used.

As such a substance, for example, there is an ultraviolet curable resin disclosed in Japanese Patent Application No. 10-279439 filed by the present applicant. Acrylic resin is suitable as the UV-curable resin. By using various commercially available resins and photosensitizers, it is possible to obtain an ultraviolet-curable acrylic resin which is excellent in transparency and can be cured by a short-term treatment.

Specific examples of the basic constitution of the ultraviolet curable acrylic resin include a prepolymer, an oligomer and a monomer.

As the prepolymer or oligomer,
For example, acrylates such as epoxy acrylates, urethane acrylates, polyester acrylates, polyether acrylates, and spiroacetal acrylates; methacrylates such as epoxy methacrylates, urethane methacrylates, polyester methacrylates, and polyether methacrylates; Is available.

As the monomer, for example, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, N-vinyl-2-pyrrolidone, carbitol acrylate, tetrahydrofurfuryl acrylate, isovol Monofunctional monomers such as nyl acrylate, dicyclopentenyl acrylate, and 1,3-butanediol acrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, neopentyl glycol diacrylate,
Bifunctional monomers such as neopentyl glycol dimethacrylate, ethylene glycol diacrylate, polyethylene glycol diacrylate, pentaerythritol diacrylate, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate,
Polyfunctional monomers such as pentaerythritol triacrylate and dipentaerythritol hexaacrylate can be used.

In the above, the inorganic material or the organic material considering only the confinement of light has been exemplified. As a layer constituting the optical waveguide, when the structure of the light emitting element portion includes a light emitting layer, a hole transport layer, an electron transport layer and an electrode layer, when at least one of these functions as a core or a clad, May be employed.

(Hole Transport Layer) When an organic light emitting layer is used in the light emitting element portion, a hole transport layer can be provided between the electrode layer (anode) and the light emitting layer, if necessary. As the material of the hole transport layer, a material used as a hole injection material of a known photoconductive material or a known material used for a hole injection layer of an organic light emitting device can be selected and used. The material of the hole transport layer is
It has either a function of injecting holes or a function of blocking electrons, and may be either an organic substance or an inorganic substance. Specific examples thereof include, for example, Japanese Patent Application Laid-Open No. 8-248.
No. 276 can be exemplified.

(Electron Transport Layer) When an organic light emitting layer is used in the light emitting element portion, an electron transport layer can be provided between the electrode layer (cathode) and the light emitting layer, if necessary. The material of the electron transporting layer only needs to have a function of transmitting electrons injected from the cathode to the organic light emitting layer, and the material can be selected from known substances. Specific examples thereof include those disclosed in JP-A-8-248276.

(Electrode Layer) As the cathode, an electron injecting metal having a small work function (for example, 4 eV or less), an alloy electrically conductive compound, and a mixture thereof can be used.
Examples of such an electrode material include, for example, JP-A-8-248.
No. 276 can be used.

As the anode, a metal, an alloy, an electrically conductive compound or a mixture thereof having a large work function (for example, 4 eV or more) can be used. When an optically transparent material is used for the anode, CuI, ITO, SnO
₂ , conductive transparent materials such as ZnO can be used,
When transparency is not required, a metal such as gold can be used.

In the present invention, the method for forming the optical member is not particularly limited, and a known method can be used. Representative examples are shown below.

Method by lithography A positive or negative resist is exposed and developed with ultraviolet rays or X-rays, and the resist layer is patterned to prepare an optical member. As a patterning technique using a resist such as polymethyl methacrylate or a novolak resin, for example, JP-A-6-224115
And JP-A-7-20637.

A technique for patterning polyimide by photolithography is disclosed in, for example,
181689 and 1-222141. Further, as a technique for forming an optical member of polymethyl methacrylate or titanium oxide on a glass substrate by using laser ablation, there is, for example, Japanese Patent Application Laid-Open No. Hei 10-59743.

Method of Forming Refractive Index Distribution by Light Irradiation Irradiation of light having a wavelength that causes a change in the refractive index to the optical waveguide portion of the optical waveguide to periodically form portions having different refractive indexes in the optical waveguide portion. To form an optical member. As such a method, it is particularly preferable to form an optical member by forming a layer of a polymer or a polymer precursor, partially polymerizing the layer by light irradiation or the like, and periodically forming regions having different refractive indexes. . As this kind of technology, for example, JP-A-9-31238 and JP-A-9-178901,
JP-A-8-15506, JP-A-5-297202,
JP-A-5-32523, JP-A-5-39480, JP-A-9-211728, JP-A-10-26702,
Nos. 10-8300 and 2-51101.

Method by stamping Hot stamping using a thermoplastic resin (Japanese Unexamined Patent Publication No.
No. 201907), stamping using an ultraviolet curable resin (Japanese Patent Application No. 10-279439), stamping using an electron beam curable resin (Japanese Unexamined Patent Publication No. 7-235075).
The optical member is formed by stamping as described in Japanese Patent Application Laid-Open Publication No. H11-157, for example.

Etching Method A thin film is selectively removed and patterned by lithography and etching techniques to form an optical member.

The method of forming the optical member has been described above. In short, the optical member only needs to be composed of at least two regions having mutually different refractive indexes.
It can be formed by a method of forming two regions with two kinds of materials having different refractive indexes, a method of forming two regions with different refractive indexes by partially modifying one kind of material, or the like.

Each layer of the light emitting device can be formed by a known method. For example, for each layer of the light emitting device, a suitable film forming method is selected depending on its material, and specific examples include a vapor deposition method, a spin coating method, an LB method, and an ink jet method.

[0066]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment (Device) FIG. 1 shows a light emitting device 10 according to the present embodiment.
FIG. 2 is a perspective view schematically showing the light emitting device 1.
FIG. 3 is a cross-sectional view taken along the line X1-X1 in FIG. 2, and FIG.
FIG. 6 is a cross-sectional view taken along X2-X2 of FIG.
FIG. 8 is a sectional view taken along line 3-X3, and FIG.
FIG. 9 is a cross-sectional view taken along the line Y1.
FIG. 10 is a cross-sectional view taken along line 2, and FIG.
It is sectional drawing which followed the 1 line.

FIG. 5 is an enlarged sectional view of a portion indicated by reference numeral A in FIG. 4, FIG. 7 is an enlarged sectional view of a portion indicated by reference numeral B in FIG. 6, and FIG. FIG. 12 is an enlarged sectional view of a portion indicated by reference numeral C in FIG. 8, and FIG. 13 is an enlarged sectional view of a portion indicated by reference numeral D in FIG. 9.

The light emitting device 1000 has a substrate 10, a light emitting element section 100 and a waveguide section 200 formed on the substrate 10.

In the light emitting element section 100, an anode 20 serving as a light propagation section, an optical member 12 capable of forming a two-dimensional photonic band gap, a light emitting layer 14, and a cathode 22 are arranged in this order on a substrate 10. ing. Optical member 12
An insulating layer 16 which also functions as a cladding layer and a current confinement layer, except for a part thereof, is formed around the semiconductor device.

In the waveguide section 200, a core layer 30 and a clad layer 32 covering an exposed portion of the core layer 30 are arranged on the substrate 10. In the core layer 30, a defect region 15a that is a light propagation path and a non-defect region 15b that can form a two-dimensional photonic band gap are formed. A first electrode extraction section 24 and a second electrode extraction section 26 are arranged adjacent to the waveguide section 200.

Optical member 12 constituting light emitting element section 100
The defect region 15a and the non-defect region 15b constituting the waveguide section 200 are integrally formed. That is, as shown in FIG. 10, the optical member 12 and the defect region 1
5a and the non-defective region 15b are formed continuously from the light emitting element portion 100 to the waveguide portion 200.

Further, in the present embodiment, the light emitting element 1
00, a protective layer 60 is formed. By covering the light emitting element section 100 with the protective layer 60, the deterioration of the cathode 22 and the light emitting layer 14 can be prevented. In the present embodiment, in order to form the electrode extraction portions 24 and 26, the surface of the waveguide portion 200 is exposed without forming the protective layer 60 on the entire light emitting device. The protective layer 60 may be formed so as to cover the entire light emitting device as needed.

Next, each component of the light emitting element section 100 will be described in detail.

The anode 20 of the light emitting element section 100 is made of an optically transparent conductive material and forms a light propagation section. The anode 20 and the core layer 30 of the waveguide section 200 are integrally and continuously formed. The transparent conductive material forming the anode 20 and the core layer 30 is ITO.
Such as described above can be used. Further, the insulating layer (cladding layer) 16 of the light emitting element unit 100 and the cladding layer 32 of the waveguide unit 200 are formed integrally and continuously. The material constituting the insulating layer 16 and the cladding layer 32 is not particularly limited as long as it is an insulating material, has a lower refractive index than the anode 20 and the core layer 30, and can confine light.

In the light emitting element section 100, the insulating layer 16
Is formed so as to cover an exposed portion of the optical member 12, as shown in FIGS. Then, the insulating layer 16
Has a slit-shaped opening 16a extending in the emission direction of light generated in the light emitting layer 14 (described later). In the opening 16a, the anode 20 and the cathode 22 are arranged with the optical member 12 and the light emitting layer 14 interposed therebetween. In the region other than the opening 16a, the anode 2
The insulating layer 16 is interposed between the cathode 0 and the cathode 22. here,
The insulating layer 16 functions as a current confinement layer. Therefore,
When a predetermined voltage is applied to the anode 20 and the cathode 22,
A current mainly flows in a region CA (see FIG. 4) corresponding to the opening 16a. By providing the insulating layer (current confinement layer) 16 in this manner, current can be concentrated along the light guiding direction, and luminous efficiency can be increased.

As shown in FIGS. 4 and 6, the optical member 12 is formed above the anode 20 constituting the light propagation portion in the light emitting element section 100. As described above, the optical member 12 has the defect region 15a formed in the waveguide portion 200.
And is formed integrally with the non-defect region 15b,
These are formed continuously from the light emitting element section 100 to the waveguide section 200.

The optical member 12 forms a two-dimensional photonic band gap having a periodic refractive index distribution in a first direction (X direction in FIG. 2) and a second direction (Y direction in FIG. 2). More specifically, as shown in FIG. 11, the optical member 12 includes first medium layers 122a and 122a having different refractive indexes.
2b and the second medium layer 124 are formed in a predetermined pattern. In the present embodiment, the first medium layer 1
The case where 22a and 122b are arranged in a square lattice shape is shown. The first medium layers 122a and 122b and the second medium layer 124 may be any substance that can form a photonic band gap with a periodic distribution, and the materials are not particularly limited. In this embodiment mode, the first medium layer 122a is formed of a material forming the insulating layer 16, the first medium layer 122b is formed of a material forming the light emitting layer 14 (light emitting portion 14a), and the second medium layer The layer 124 is made of a material constituting the anode 20.

The optical member 12 has a defect 13 as shown in FIG. 11, and the defect 13 is constituted by a light emitting layer 14. The defect portion 13 is formed such that an energy level due to the defect exists in an emission spectrum of the light emitting layer 14 due to current excitation.

In this embodiment, the direction of the emitted light can be defined by providing a difference in the light confinement state between one optical member and the optical member on the other side from the defect portion 13 of the optical member 12. For example, as shown in FIG.
If it is desired to emit light through the waveguide section 20,
What is necessary is just to make the light confinement state of the optical member on the 0 side weaker than the light confinement state of the other optical member. The strength of the light confinement of the optical member can be controlled preferably by the number of optical members by considering the number of medium layers of the optical member, the interval between the medium layers, the difference in the refractive index of the medium layer of the optical member, and the like.

Defect area 15a and non-defect area 15b
Is formed on the base portion 15 in the waveguide portion 200,
A part of the core layer 30 is formed. In the present embodiment, since base portion 15 is formed from anode 20, it is made of the same material as anode 20.

As shown in FIG. 10, the defect area 15a
The light emitting device 100 is configured to correspond to the portion where the defective portion 13 is formed. In the present embodiment, the defect region 1
5 a is made of the same material as the base portion 15, that is, the anode 20. In the present embodiment, the defect region 15a
Has been shown to extend in parallel with the light emission direction, but the shape and number of the defective regions 15a are not limited to this, and may be, for example, a shape branched off in the middle, or a plurality of defective regions may be formed. May be. In the waveguide section 200, the defect region 15a functioning as a core layer includes:
The anode may be formed of a different material. In particular, a material such as TiO _{2 having} a small absorption coefficient may be used.

The non-defect region 15b has a two-dimensional photonic band gap having a periodic refractive index distribution in a first direction (X direction in FIG. 2) and a second direction (Y direction in FIG. 2). Is configured. The non-defect area 15b has the same configuration as the optical member 12 formed in the light emitting element unit 100. That is, in the non-defect area 15b, as in the case of the optical member 12, as shown in FIG.
a, 122b, and the second medium layer 124 are arranged in a predetermined pattern.

In the core layer 30, the defective region 15a functions as a core, and the non-defect region 15b functions as a clad. That is, spontaneous emission of light generated in the light emitting layer 14 in the light emitting element unit 100 is restricted in the core layer 30 of the waveguide unit 200 by the non-defect region 15b serving as a clad, thereby causing the defect region 15a serving as a core. Propagate.

The optical member 12 and the non-defect area 15
In FIG. 2B, the first medium layers 122a and 122b are arranged in a square lattice along the X and Y directions in FIG.
That is, the optical member 12 and the non-defect area 15b are positioned in the X direction and the Y direction (the core layer 30
), The optical member 12 in the light emitting element portion 100 and the non-defect region 15 b in the waveguide portion 200.
Accordingly, the light is confined, whereby the two-dimensional light propagation in the X direction and the Y direction in the light emitting element unit 100 and the waveguide unit 200 is controlled.

The propagation of light in the leak mode is allowed in other directions. In order to control the propagation of the light in these leak modes, a cladding layer or a dielectric multilayer mirror can be provided for the purpose of confining the light, if necessary.

As shown in FIG. 2, the first electrode extraction portion 24 and the second electrode extraction portion 26 adjacent to the waveguide portion 200 are electrically connected by an insulating cladding layer 32 continuous with the insulating layer 16. Are separated. First electrode extraction unit 24
Is integrally continuous with the anode 20 of the light emitting element unit 100 and functions as an extraction electrode of the anode 20. The second electrode extraction portion 26 is formed so as to extend to the light emitting element portion 100 side, and a part thereof is electrically connected to the cathode 22. Therefore, the second electrode extraction part 26 functions as an extraction electrode of the cathode 22. In the present embodiment, the first and second electrode extraction portions 24 and 26 are formed in the same film forming process as the anode 20.

As for the method of manufacturing the optical member 12 of the light emitting device 1000 and the materials constituting each layer, the above-described methods and materials can be appropriately used. These manufacturing methods, materials, and configurations are the same in other embodiments described below.

Further, the first medium layers 122a and 122b constituting the optical member 12 may be layers of gas such as air. As described above, when the optical member is formed of a gas layer, the refractive index difference between the two media constituting the optical member can be increased within a range of selection of a general material used for the light emitting device. An optical member that is efficient with respect to the wavelength of light can be obtained. This modified example can be similarly applied to other embodiments.

In the light emitting element portion, at least one of a hole transport layer and an electron transport layer can be provided as necessary. This modified example can be similarly applied to other embodiments.

(Device Operation) Next, the light emitting device 1
000 will be described.

When a predetermined voltage is applied to the anode 20 and the cathode 22, electrons are injected from the cathode 22 and holes are injected from the anode 20 into the light emitting layer 14, respectively. In the light emitting layer 14, the electrons and holes are recombined to generate excitons, and when the excitons are deactivated, light such as fluorescence or phosphorescence is generated. And, as mentioned above,
Since the region CA (see FIG. 4) through which the current flows is defined by the insulating layer 16 interposed between the anode 20 and the cathode 22, the current can be efficiently supplied to the region where light emission is desired.

The light generated in the light emitting layer 14 is introduced into the anode 20 and the optical member 12 of the light emitting element section 100. Then, in the optical member 12, as shown in FIG.
Light having an energy level caused by a defect in the defect portion 13 propagates. That is, light in a wavelength band corresponding to the photonic band gap of the optical member 12 cannot propagate through the optical member 12, but excitons generated in the defect portion 13 return to the ground state at an energy level caused by the defect. , Only light in a wavelength band corresponding to this energy level is generated. The light introduced into the light propagating portion propagates through the light propagating portion toward the end face (on the side of the waveguide portion 200), and is formed continuously and integrally with a part (anode 20) of the light propagating portion. Waveguide part 2
The light propagates through the defect region 15a in the core layer 30 of No. 00 and exits from the end face. This outgoing light is transmitted to the optical member 1
2, only light in a specific wavelength band is emitted by the two-dimensional photonic band gap constituted by
It has wavelength selectivity, narrow emission spectrum width, and excellent directivity. Further, the core layer 3 of the waveguide section 200
When light propagates through the non-defect region 0, the non-defect region 15b (cladding)
Since the light is confined by the two-dimensional photonic band gap configured and the light propagates in the defect region 15a (core), light loss can be reduced.

(Effects) The main effects of the present embodiment are as follows.

(A) According to the light emitting device 1000 of the present embodiment, the anode 20 and the cathode 22 are electrically connected to each other via the light emitting portion 14a filled in the opening 16a of the insulating layer 16, and this opening is formed. The region where the current flows is defined by the portion 16a. Therefore, the insulating layer 16 functions as a current confinement layer, can efficiently supply current to the light emitting region, and can increase luminous efficiency. By defining the current supply region by the current confinement layer (insulating layer 16), the light emitting region can be set in a state of being aligned with the core layer 30. From this point as well, the efficiency of light coupling to the waveguide portion 200 can be improved. Can be increased.

(B) According to the light emitting device 1000, the cathode 2
2 and the anode 20 form the light-emitting layer 1
The electrons and holes are injected into the light-emitting layer 4 and recombine with the electrons and holes in the light-emitting layer, so that light is generated when the molecules return from the excited state to the ground state. At this time, the light in the wavelength band corresponding to the photonic band gap formed by the optical member 12 cannot propagate through the optical member 12, and only the light in the wavelength band corresponding to the energy level caused by the defect 13 is emitted. The light can propagate in the optical member 12. Therefore, by defining the width of the energy level caused by the defect portion 13, it is possible to efficiently obtain light with a very narrow emission spectrum width in which spontaneous emission is restricted in two dimensions (X direction-Y direction). it can.

(C) The light generated in the light emitting layer 14 in the light emitting element portion 100 propagates through the defect region 15a having the defect portion in the waveguide portion 200, where the spontaneous emission is restricted by the non-defect region 15b. . That is, as described above, in the core layer 30, the defective region 15a functions as a core, and the non-defect region 15b functions as a clad. Therefore, when light propagates through the waveguide section 200,
Light is confined by the two-dimensional photonic band gap composed of the non-defect region 15b (cladding), and the light propagates through the defect region 15a (core).
Loss when light propagates through the waveguide section 200 can be reduced.

(D) In a general light emitting device, when light of multiple wavelengths is coupled and guided to the outside, if the waveguide portion is bent, the loss at that portion increases. However, according to the light emitting device 1000 of the present invention, even if the waveguide section 200 is bent, the optical loss at that portion can be reduced, and the degree of freedom regarding the arrangement of elements can be increased.

(E) At least a part (anode 20) of the light propagation portion of the light emitting element portion 100 and the core layer 3 of the waveguide portion 200
0 is integrally continuous. Accordingly, the light emitting element unit 100 and the waveguide unit 200 are optically coupled with high coupling efficiency, and light can be efficiently propagated. In addition, since the light propagation portion including the anode 20 and the core layer 30 can be formed and patterned in the same process, there is an advantage that manufacturing is simplified.

Further, the insulating layer (cladding layer) 16 of the light emitting element section 100 and the cladding layer 32 of the waveguide section 200 are integrally continuous. Thereby, the light emitting element unit 10
0 (especially the light propagating section) and the waveguide section 200 are optically coupled with high coupling efficiency, and efficient light propagation is possible.
In addition, since the insulating layer 16 and the cladding layer 32 can be formed and patterned in the same process, there is an advantage that manufacturing is simplified.

As described above, according to light emitting device 1000 of the present embodiment, light emitting element portion 100 and waveguide portion 200
Are connected with high coupling efficiency, so that highly efficient emitted light can be obtained.

(F) In the present embodiment, the optical member 12
In addition, the defect region 15a and the non-defect region 15b constituting the core layer 30 can be composed of an organic material or an inorganic material, respectively. Since there is no difficulty in being in a regular state or easily affected by impurities, excellent characteristics due to an excellent photonic band gap can be obtained.

The above operation and effect are the same in the other embodiments.

(Manufacturing Process) Next, an example of manufacturing the light emitting device 1000 according to the present embodiment will be described with reference to FIGS. In each of FIGS. 14 to 20,
(A) is a plan view, and (B) to (D) are cross-sectional views along any of the line AA, the line BB, and the line CC in the plan view shown in (A). In FIGS. 14 to 20, reference numerals 100a and 200a denote light emitting element units 10 respectively.
0 and a region where the waveguide section 200 is formed.

(1) Formation of Conductive Layer and Optical Member Next, as shown in FIGS.
A conductive layer 20a is formed on the top using an optically transparent conductive material. The method for forming the conductive layer 20a is selected depending on the material of the conductive layer 20a and the like, and the above-described method can be used. For example, when the conductive layer 20a is formed of ITO, an evaporation method can be preferably used.

Next, as shown in FIGS. 15A to 15D, a defect region 15 functioning as a core is formed on the surface of the conductive layer 20a in the region 100a where the light emitting element section 100 is formed.
a, and an uneven portion 12a for forming one of the medium layers forming the optical member 12 and the non-defect region 15b forming the photonic band gap. The method for forming the defect region 15a and the uneven portion 12a is as follows.
The method is selected depending on the material of a and the like, and the above-described method such as lithography or stamping can be used. For example, when the conductive layer 20a is made of ITO, it can be formed by lithography and etching, or a liquid phase method such as an ink jet method using liquid ITO. The concave and convex portions 12a are used for forming the optical member 12 forming the light emitting element portion 100 and the defect region 15b forming the waveguide portion 200 in a later step. Therefore, by continuously forming concave portions having a predetermined pitch in the X direction and the Y direction, the concave / convex portion 1 in which the concave portions are arranged in a square lattice shape is formed.
2a is obtained. Here, the concave portions provided in the concave / convex portions 12a correspond to the first medium layers 122a and 122b in FIG.
Is a groove provided for forming a groove.

Further, as shown in FIG. 15, the defect region 15a is formed by leaving the concave and convex portions 12a in a predetermined region of the conductive layer 20a in order to propagate the light generated in the generation layer 14. You.

Next, as shown in FIGS. 16A to 16D, the conductive layer 20a is patterned by, for example, lithography, so that the anode 20, the first and second electrode extraction portions 24 and 26, and the base portion 15 are formed. To form

The anode 20 and the first electrode lead-out portion 24 are formed continuously. The second electrode extraction portion 26 is connected to the anode 20 and the first electrode extraction portion 24 by the opening 28a.
And are separated. A portion of the uneven portion 12a for forming the optical member 12 in a later step is formed integrally with the anode 20, and a part of the anode 20 including the uneven portion 12a also functions as a light propagation portion. Further, the base portion 15 is formed integrally and continuously with the defective region 15a, and
0, first electrode extraction section 24, and second electrode extraction section 2
6 are separated from each other through openings 28b, 28a, 28c.

As described above, by selecting the material of the conductive layer 20a in consideration of the optical characteristics such as the refractive index, the light propagation including the optical member 12 together with the electrode (in this example, the anode and the electrode extraction portion) is performed. And the optical part such as the core layer 30 can be formed simultaneously.

(2) Formation of Insulating Layer As shown in FIGS. 17A to 17D, the openings 28a and 28
By filling the layers 8b and 28c, the insulating layer 16 having a predetermined pattern is formed. The insulating layer 16 includes the uneven portion 12.
a has an opening 16a that exposes a part of the portion forming the optical member 12; The opening 16a has a slit shape extending in the light waveguide direction. This opening 16
Since the region through which the current flows is defined by a, the length and width of the opening 16a are set in consideration of a desired current density, a current distribution, and the like. Since the insulating layer 16 functions as a cladding layer for confining light as well as the function of the current confinement layer, the material thereof is selected in consideration of the insulating properties and the optical characteristics such as the refractive index. Further, the material forming the insulating layer 16 is filled in the concave portions of the concave-convex portions 12a to form the optical member 12 and the core layer 30 including the defect region 15a and the non-defect region 15b. Therefore, as a material for forming the insulating layer 16, a material having an optical function for forming the first medium layer 122 a of the optical member 12 forming the photonic band gap together with the insulating function is selected.

When ITO is used as the conductive layer, for example, polyimide, polyamide, polyethylene terephthalate, polyethersulfone, silicon polymer, or the like can be used as the insulating layer 16.

The insulating layer 16 electrically separates the anode 20 and the first electrode lead-out part 24 from the second electrode lead-out part 26 and covers a part of the concave and convex part 12a for the optical member. The clad layer 32 functions as a clad layer and further covers an exposed portion of the core layer 30.

(3) Formation of Light Emitting Layer As shown in FIGS.
The light emitting layer 14 is formed in a predetermined region of the region 100a where the light emitting layer is formed. The light emitting layer 14 includes a light emitting portion 14a in which at least an opening 16a formed in the insulating layer 16 is filled with a light emitting material.
Having. Further, the material forming the light emitting layer 14 is filled in the concave portion of the portion forming the optical member 12 among the concave and convex portions 12 a to form the optical member 12. Through these steps, the light emitting section 14a is formed as shown in FIG. Therefore, as a material for forming the light emitting layer 14, a material having an optical function for forming the first medium layer 122b of the optical member 12 forming the photonic band gap together with the light emitting function is selected.

(4) Formation of Cathode As shown in FIGS.
The cathode 22 is formed in the region 100a in which is formed. The cathode 22 is formed so as to cover the light emitting part 14 a of the light emitting layer 14, and one end thereof is formed so as to overlap the second electrode extraction part 26. Thus, the light emitting element section 100 and the waveguide section 200 are formed.

(5) Formation of Protective Layer As shown in FIGS. 20A to 20C, the protective layer 60 is formed so as to cover at least the light emitting element portion 100. The protective layer 60 is desirably formed so that the cathode 22, the light emitting layer 14, and the anode (light propagation portion) 20 do not come into contact with the outside. In particular, since the cathode 22 usually made of an active metal and the light emitting layer 14 made of an organic material are easily deteriorated by the atmosphere or moisture, the protective layer 60 is formed to prevent such deterioration. For the protective layer 60, it is preferable to use a resin material such as an epoxy resin, a silicone resin, and an ultraviolet curable resin.

Through the above steps, the light emitting device 1000 is formed. According to this manufacturing method, by selecting the material of the conductive layer 20a in consideration of the optical characteristics such as the refractive index, the electrode member (in this case, the anode 20 and the electrode extraction portions 24 and 26) and the optical member are selected. The optical member such as the core layer 30 and the light propagation portion (part of the anode 20) including the concave and convex portions 12a for 12 can be formed in the same process, and the manufacturing process can be simplified.

(Modification of Optical Member) In this embodiment,
Instead of the optical member 12 shown in FIGS. 11 and 12, the structure illustrated in FIGS. 21 to 24 can be adopted.
In these figures, members similar to the optical member 12 include:
The same reference numerals are given and detailed description is omitted.

FIG. 21 is a plan view schematically showing the optical member 120. FIG. FIG. 22A is a plan view schematically showing the optical member 220, and FIG. 22B is a plan view of FIG.
The first medium layer 122a constituting the optical member 220 shown in FIG.
FIG. 5 is a diagram showing an example in which the arrangement of the above is partially changed. FIG.
Shows a structure in which the defect 13 is formed in contact with a part of the first medium layer 122b in the optical member 12 shown in FIG. FIG. 24 is a plan view schematically showing the optical member 320. FIG.

(1) The optical member 120 shown in FIG. 21 has a defect 13, and the defect 13 is
It is formed with a part of b being irregular. In particular,
The defect portion 13 is configured by not forming the first medium layer 122b at a lattice point. The defect portion 13 is formed such that an energy level due to the defect exists in an emission spectrum of the light emitting layer 14 due to current excitation.

(2) Optical member 220 shown in FIG.
Are formed in a triangular lattice shape. This optical member 220
The first medium layers 122a and 122b are arranged in a triangular lattice. The first medium layers 122a and 122b and the second medium layer 124 may be any substance that can form a photonic band gap with a periodic distribution, and the material is not particularly limited. In the present embodiment, the first medium layers 122a and 122b are each made of a material forming the insulating layer 16 and the light emitting layer 14, and the second medium layer 124 is made of a material forming the anode 20. First
The material of the second medium layer may be opposite to the above.

In this optical member 220, the propagation of light is restricted in three two-dimensional directions (directions a, b and c), so that the light is further transmitted as compared with the two directions of the optical member 12 shown in FIG. The confinement is large, and the efficiency of emitted light can be further increased.

(3) In FIG. 22B, the optical member 220
Are arranged in a honeycomb shape. In the case of the optical member 220, confinement with an arbitrary polarization is possible.

(4) FIG. 23 shows a structure in which, in the optical member 12 shown in FIG. 11, the defect portion 13 is formed in contact with a part of the first medium layer 122b.

In addition, as the optical member, the first medium layer and the second medium layer are formed around the medium layer constituting the defect portion.
Medium layers may be alternately arranged concentrically. In this optical member, propagation of light is restricted in all two-dimensional directions, and the confinement of light can be further enhanced.

(5) In the optical member 320 shown in FIG. 24, unlike the light emitting device 1000 shown in FIG. 11, no defect region is formed in the core layer 130 formed in the waveguide portion 200, and the non-defect region 315b (Non-defect area 15 in FIG. 11)
b). Further, the optical member 320 has a defective portion 23 formed therein. As described above, when the defect portion 23 is formed in the optical member 320, light generated in the light emitting layer 14 can be transmitted even if the core layer 130 is formed only of the non-defect region 315b.

[Second Embodiment] FIG. 25 is a sectional view schematically showing a light emitting device 2000 according to the present embodiment. FIG. 9 used for describing the first embodiment is different from FIG. The corresponding parts are shown.

Light emitting device 2000 differs from light emitting device 1000 according to the first embodiment in that it has first and second dielectric multilayer films 11a and 11b functioning as photonic band gaps. Portions having functions substantially similar to those of the light emitting device 1000 are denoted by the same reference numerals, and mainly, only main features of the light emitting device 2000 different from the light emitting device 1000 will be described.

The light emitting device 2000 has the substrate 10, the light emitting element 100 and the waveguide 200 formed on the substrate 10.

The light emitting element section 100 has a first
, A light-transmitting portion, an anode 20, an optical member 12 capable of forming a two-dimensional photonic band gap, a light-emitting layer 14, a cathode 22, and a second dielectric multilayer film 11b in this order. It is arranged in. First
The second dielectric multilayer films 11a and 11b form a one-dimensional photonic band gap in the thickness direction of the optical member 12 (the direction perpendicular to the substrate 10, the Z direction in FIG. 24). And around the optical member 12,
Except for a part thereof, an insulating layer 16 which also functions as a cladding layer and a current confinement layer is formed. In FIG.
The dielectric multilayer films 11a and 11b are emphasized.

In the waveguide section 200, a first dielectric multilayer film 11a, a core layer 30, a cladding layer 32 covering an exposed portion of the core layer 30, and a second dielectric multilayer film 11b are formed on a substrate 10. Are located. Adjacent to the waveguide section 200, a first electrode extraction section 24 and a second electrode extraction section 26
And are arranged.

The light emitting device 2000 of the present embodiment has the first
The optical member 1 is similar to the light emitting device 1000 of the embodiment.
2 by confining the light in the X and Y directions.
In addition to controlling the two-dimensional light propagation,
In the Z direction (perpendicular to the paper), a photonic band gap is formed for the emission spectrum by the first and second dielectric multilayer films 11a and 11b,
Light propagation in the Z direction is controlled. Therefore, in the present embodiment, in addition to the optical member 12 and the non-defect region 15b, the first and second dielectric multilayer films 11a and 11b allow light to be transmitted three-dimensionally in the X, Y, and Z directions. Propagation is controlled. That is, three dimensions (X direction-Y direction-Z
Direction), spontaneous emission is restricted, so that light with a very narrow emission spectrum width can be obtained with high efficiency.

Light emitting device 2000 according to this embodiment
Is a structure suitable for the case where the thickness of the cathode 22 is small, for example. When the thickness of the cathode 22 is small, light generated in the light emitting layer 14 can pass through the cathode 22. In this case, by forming the second dielectric multilayer film 11b outside the cathode 22, light can be more reliably confined, and the emission efficiency can be increased.

The configuration and operation and effects of the other parts of the light emitting device 2000 according to the present embodiment are the same as those of the light emitting device 1000 according to the first embodiment, and a description thereof will be omitted.

[Third Embodiment] FIG. 26 is a sectional view schematically showing a light emitting device 3000 according to the present embodiment. FIG. 9 used for describing the first embodiment is different from FIG. The corresponding parts are shown. FIG. 27 is a diagram schematically showing the optical member 112 in a cross section along the line Z2-Z2 in FIG.

In the light emitting device 3000, the optical members are the light emitting devices 1000 and 2000 according to the first and second embodiments.
And different. Portions having functions substantially similar to those of the light emitting devices 1000 and 2000 are denoted by the same reference numerals, and mainly,
Light emitting device 3000 different from light emitting devices 1000 and 2000
Only the main features will be described.

The light emitting device 3000 has a substrate 10, a light emitting element section 100 and a waveguide section 200 formed on the substrate 10. Hereinafter, the light emitting element unit 100 which is different from the first embodiment will be mainly described.

The light emitting element section 100 includes an optical member 112 constituting a light propagation section and an anode 2 on the first substrate 10.
0, the light emitting layer 14, the cathode 22, and the protective layer 60 are arranged in this order. Further, around the optical member 112, except for a part thereof, the insulating layer 16 which also functions as a cladding layer and a current confinement layer is formed.

As shown in FIGS. 26 and 27, the optical member 112 has a diffraction grating shape, is formed on the upper part of the anode 20 constituting the light propagation portion, and has two different refractive indexes. The medium layers are arranged periodically. The optical member 112 has a periodic refractive index distribution in the light propagation direction (Y direction in FIG. 26) based on the shape (dimensions) and the combination of the media, and has a one-dimensional distribution in a predetermined wavelength band. Construct a photonic band gap.

For example, as shown in FIG. 26, the optical member 112 includes a first medium layer 120a having a different refractive index and a second medium layer 120a.
And the medium layers 120b are alternately arranged. The first medium layer 120a and the second medium layer 120b may be any substance that can form a photonic band gap with a periodic distribution, and the material is not particularly limited. In the present embodiment, the first medium layer 120a and the second medium layer 120b are made of a material constituting the anode 20 and the light emitting layer 14, respectively.

The optical member 112 is an optical member 12 (FIG. 1) formed in the light emitting device 1000 according to the first embodiment.
2), has a defective portion 13 (not shown), and the defective portion 13 is constituted by the light emitting layer 14.
The defect 13 has an energy level caused by the defect,
The light emitting layer 14 is formed so as to be present in an emission spectrum due to current excitation.

In this embodiment, the direction of the emitted light can be defined by providing a difference in the light confinement state between one optical member and the optical member on the other side from the defect portion 13 of the optical member 12. For example, as shown in FIG.
If it is desired to emit light through the waveguide section 20,
What is necessary is just to make the light confinement state of the optical member on the 0 side weaker than the light confinement state of the other optical member. The degree of light confinement of the optical member can be controlled by considering the number of pairs of medium layers of the optical member, the difference in the refractive index of the medium layer of the optical member, and the like, preferably by the number of pairs of optical members.

The other parts of the structure of the light emitting device 3000 according to the present embodiment are similar in structure and operation to those of the light emitting devices 1000 and 2000 according to the first embodiment.
The description is omitted.

In this embodiment, in order to confine light in the thickness direction of the substrate 10, if necessary, a reflective film having a high reflectivity, such as a dielectric multilayer mirror or a clad layer, is provided outside the cathode 22. Can also be formed. For example, as in the second embodiment, dielectric multilayer films 11a and 11b constituting a photonic band gap for confining light in the thickness direction of the substrate 10 may be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view schematically showing a light emitting device according to a first embodiment of the present invention.

FIG. 2 is a plan view schematically showing the light emitting device according to the first embodiment of the present invention.

FIG. 3 is a sectional view taken along line X1-X1 in FIG. 2;

FIG. 4 is a sectional view taken along line X2-X2 in FIG.

FIG. 5 is an enlarged sectional view of a portion indicated by reference numeral A in FIG.

FIG. 6 is a sectional view taken along line X3-X3 in FIG. 2;

FIG. 7 is an enlarged sectional view of a portion indicated by reference numeral B in FIG.

FIG. 8 is a sectional view taken along line Y1-Y1 of FIG.

FIG. 9 is a sectional view taken along line Y2-Y2 of FIG. 2;

FIG. 10 is a diagram schematically showing a cross section taken along line Z1-Z1 in FIG. 8;

11 is an enlarged sectional view of a portion indicated by reference numeral E in FIG.

FIG. 12 is an enlarged sectional view of a portion indicated by reference numeral C in FIG.

FIG. 13 is an enlarged sectional view of a portion indicated by reference numeral D in FIG.

FIG. 14A is a plan view illustrating a step of manufacturing the light emitting device according to the first embodiment of the present invention, and FIGS.
(D) is a sectional view taken along the line AA, the line BB, and the line CC of the plan view shown in (A).

FIG. 15A is a plan view illustrating a step of manufacturing the light emitting device according to the first embodiment of the present invention, and FIGS.
(D) is a sectional view taken along the line AA, the line BB, and the line CC of the plan view shown in (A).

FIG. 16A is a plan view illustrating a step of manufacturing the light emitting device according to the first embodiment of the present invention, and FIGS.
(D) is a sectional view taken along the line AA, the line BB, and the line CC of the plan view shown in (A).

FIG. 17A is a plan view illustrating a step of manufacturing the light emitting device according to the first embodiment of the present invention, and FIGS.
(D) is a sectional view taken along the line AA, the line BB, and the line CC of the plan view shown in (A).

18A is a plan view illustrating a manufacturing step of the light emitting device according to the first embodiment of the present invention, and FIGS. 18B and 18C are plan views of the light emitting device shown in FIG. -B line and CC
It is sectional drawing along the line.

19A is a plan view showing a manufacturing step of the light emitting device according to the first embodiment of the present invention, and FIGS. 19B and 19C are plan views of the light emitting device shown in FIG. -B line and CC
It is sectional drawing along the line.

20A is a plan view showing a manufacturing step of the light-emitting device according to the first embodiment of the present invention, and FIGS. 20B and 20C are plan views of the light-emitting device shown in FIG. -B line and CC
It is sectional drawing along the line.

FIG. 21 is a view showing a modification of the optical member.

FIGS. 22A and 22B are diagrams illustrating a modification of the optical member.

FIG. 23 is a view showing a modification of the optical member.

FIG. 24 is a view showing a modification of the optical member.

FIG. 25 is a sectional view schematically showing a light emitting device according to a second embodiment of the present invention.

FIG. 26 is a sectional view schematically showing a light emitting device according to a third embodiment of the present invention.

FIG. 27 is a diagram schematically showing a cross section taken along line Z2-Z2 in FIG. 26;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Substrate 11a, 11b Dielectric multilayer film 12, 112, 120, 220, 320 Optical member 12a Uneven part 13, 23 Defect part 14 Light emitting layer 14a Light emitting part 15 Base part 15a Defect area 15b, 315b Non-defect area 16 Insulating layer ( (Clad layer, current confinement layer) 16a Opening 20 Anode 20a Conductive layer 22 Cathode 24, 26 Electrode extraction part 28a, 28b, 28c Opening 30, 30 Core layer 32 Cladding layer 60 Protective layer 100 Light emitting element section 100a Area 112a First Medium layer 112b Second medium layer 122a, 122b First medium layer 124 Second medium layer 200 Waveguide section 200a Region 1000, 2000, 3000 Light emitting device

Claims (30)

[Claims] 1. A light-emitting element, comprising: a substrate; a light-emitting element; and a waveguide for transmitting light from the light-emitting element, wherein the light-emitting element is capable of emitting light by electroluminescence; A pair of electrode layers for applying an electric field to the light-emitting layer, a light-propagating portion for transmitting light generated in the light-emitting layer, and an opening portion partially disposed between the pair of electrode layers. An insulating layer that can function as a current confinement layer that defines a region where a current supplied to the light emitting layer flows through the opening; and an optical member for light propagating through the light propagation unit. The waveguide section is formed integrally with the light emitting element section, and forms a two-dimensional photonic band gap or a part thereof. The light generated in the light emitting layer is the two-dimensional photonic band gap. In two dimensions Spontaneous emission is constrained to propagate the waveguide portion, the light emitting device. 2. The optical waveguide according to claim 1, wherein the waveguide portion includes: a core layer that is integrally continuous with at least a part of the light propagation portion; and a clad layer that is continuously integrated with the insulating layer. The light emitting device, wherein the core layer forms the two-dimensional photonic band gap or a part thereof. 3. A light-emitting element portion and a waveguide portion for transmitting light from the light-emitting element portion are integrally formed on a substrate, wherein the light-emitting element portion includes a light-emitting layer capable of emitting light by electroluminescence, A pair of electrode layers for applying an electric field to the light emitting layer; a light transmitting portion for transmitting light generated in the light emitting layer; and an insulating member disposed in contact with the light transmitting portion and capable of functioning as a cladding layer. A layer, and an optical member for light propagating through the light propagating portion, wherein the waveguide portion is a core layer that is integrally continuous with at least a part of the light propagating portion, and is integral with the insulating layer. The core layer constitutes a two-dimensional photonic band gap or a part thereof, and the light generated in the light emitting layer emits light by the two-dimensional photonic band gap. In dimensions Spontaneous emission is constrained to propagate the waveguide portion, the light emitting device. 4. The waveguide according to claim 2, wherein the core layer constituting the waveguide portion includes a defect region and a non-defect region, and the defect region is formed by forming a defect portion continuously. , Light emitting device. 5. The light emitting device according to claim 4, wherein the defective region functions as a core, and the non-defective region functions as a clad. 6. The optical member according to claim 1, wherein the optical member forms a two-dimensional photonic band gap or a part thereof, and an energy level caused by a defect is within a predetermined emission spectrum. The light generated in the light emitting layer is emitted with the two-dimensional spontaneous emission restricted by the two-dimensional photonic band gap constituting the optical member. , Light emitting device. 7. The insulating layer according to claim 6, wherein the insulating layer has an opening facing the optical member.
Light emitting device. 8. The light emitting device according to claim 1, wherein the opening of the insulating layer has a slit shape extending in a direction in which light generated in the light emitting layer is emitted. 9. The light emitting device according to claim 1, wherein at least a part of the light emitting layer exists in the opening formed in the insulating layer. 10. The method according to claim 2, wherein one of the pair of electrode layers is made of a transparent conductive material,
The light emitting device, wherein the electrode layer can also function as at least a part of the light propagation unit and the core layer. 11. The light emitting device according to claim 2, wherein the core layer forming the waveguide portion is continuous with at least a formation region of the optical member. 12. The light emitting device according to claim 1, wherein the optical member is formed in the light propagation unit. 13. The light-emitting element according to claim 1, wherein the light-emitting element is formed on the substrate, and functions as at least a part of the light-transmitting part. A light-emitting device, comprising: the optical member; the insulating layer having an opening facing the optical member; the light-emitting layer at least partially located in the opening of the insulating layer; and a cathode. 14. The optical waveguide according to claim 13, wherein the waveguide portion is formed on the substrate, and covers a core layer optically continuous with the anode, and an exposed portion of the core layer. A light-emitting device comprising: 15. The semiconductor device according to claim 2, wherein the core layer constituting the waveguide section includes first and second core layers.
Has a two-dimensional photonic band gap having a periodic refractive index distribution in the direction of. The photonic band gap has a columnar first medium layer arranged in a square lattice, and the first medium A second medium layer formed between the layers. 16. The waveguide according to claim 2, wherein the core layer constituting the waveguide has a periodic refractive index distribution in first, second, and third directions in one plane. A light-emitting device having a two-dimensional photonic band gap, the photonic band gap including a columnar first medium layer and a second medium layer formed between the first medium layers . 17. The non-defect region forming the core layer according to claim 15, wherein the non-defect region includes the two-dimensional photonic band gap including the first medium layer and the second medium layer. The light emitting device, wherein the defect region forming the core layer is formed from the same material as the second medium layer. 18. The photonic according to claim 1, wherein the optical member has a two-dimensional photonic band gap having a periodic refractive index distribution in first and second directions. A light emitting device in which a band gap includes a first columnar medium layer arranged in a square lattice and a second layer formed between the first layer. 19. The two-dimensional photonic band gap according to claim 1, wherein the optical member has a periodic refractive index distribution in first, second, and third directions in one plane. Wherein the photonic band gap has a columnar first medium layer and a second medium layer formed between the first medium layers. 20. The light emitting device according to claim 16, wherein the first medium layer is arranged in a triangular lattice. 21. The light-emitting device according to claim 16, wherein the first medium layer is arranged in a honeycomb shape. 22. The method according to claim 15, wherein the first medium layer is formed perpendicular to a substrate.
Light emitting device. 23. The light emitting device according to claim 15, wherein the second medium layer is formed integrally with one of the pair of electrode layers. 24. The light emitting device according to claim 15, wherein the first medium layer is formed integrally with the insulating layer or the light emitting layer. 25. The light emitting device according to claim 1, wherein the optical member has a one-dimensional first photonic band gap having a periodic refractive index distribution in one direction. 26. The optical member according to claim 25, wherein the optical member has a one-dimensional second photonic band gap that forms a two-dimensional photonic band gap in combination with the first photonic band gap. Light emitting device. 27. The light transmission device according to claim 1, wherein the light propagating through the light transmitting portion is provided with a layer that regulates the light transmission in a direction in which the light transmission is not restricted by the photonic band gap. Light emitting device. 28. The light emitting device according to claim 27, wherein the layer that regulates the propagation of light is a clad layer or a dielectric multilayer film. 29. The light-emitting device according to claim 1, wherein at least the light-emitting element portion is covered with a protective layer. 30. The light emitting device according to claim 1, wherein the light emitting layer includes an organic light emitting material as a light emitting material.