JP2002151272A - Electroluminescent element - Google Patents
Electroluminescent elementInfo
- Publication number
- JP2002151272A JP2002151272A JP2000341775A JP2000341775A JP2002151272A JP 2002151272 A JP2002151272 A JP 2002151272A JP 2000341775 A JP2000341775 A JP 2000341775A JP 2000341775 A JP2000341775 A JP 2000341775A JP 2002151272 A JP2002151272 A JP 2002151272A
- Authority
- JP
- Japan
- Prior art keywords
- group
- general formula
- electroluminescent device
- thin film
- independently
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000002019 doping agent Substances 0.000 claims abstract description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 6
- 125000002252 acyl group Chemical group 0.000 claims abstract description 5
- 239000012044 organic layer Substances 0.000 claims abstract description 5
- 150000003839 salts Chemical class 0.000 claims abstract description 4
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 150000003458 sulfonic acid derivatives Chemical class 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- 125000001624 naphthyl group Chemical group 0.000 claims description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical group C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 claims description 2
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- 239000003960 organic solvent Substances 0.000 claims 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- 230000000452 restraining effect Effects 0.000 abstract 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 239000002966 varnish Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical class OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 4
- -1 aromatic amine hydrochloride Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- YYUIROVDIXDEKU-UHFFFAOYSA-N 1,3,4-oxathiazole Chemical class C1OC=NS1 YYUIROVDIXDEKU-UHFFFAOYSA-N 0.000 description 1
- YMRHXVOHLPIMNN-UHFFFAOYSA-N 1-n-(3-methylphenyl)-2-n,2-n-diphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(NC=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 YMRHXVOHLPIMNN-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- SDGNNLQZAPXALR-UHFFFAOYSA-N 3-sulfophthalic acid Chemical class OC(=O)C1=CC=CC(S(O)(=O)=O)=C1C(O)=O SDGNNLQZAPXALR-UHFFFAOYSA-N 0.000 description 1
- KWIVRAVCZJXOQC-UHFFFAOYSA-N 3h-oxathiazole Chemical compound N1SOC=C1 KWIVRAVCZJXOQC-UHFFFAOYSA-N 0.000 description 1
- RHPVVNRNAHRJOQ-UHFFFAOYSA-N 4-methyl-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1NC1=CC=C(C)C=C1 RHPVVNRNAHRJOQ-UHFFFAOYSA-N 0.000 description 1
- MVIXNQZIMMIGEL-UHFFFAOYSA-N 4-methyl-n-[4-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 MVIXNQZIMMIGEL-UHFFFAOYSA-N 0.000 description 1
- WNKQDGLSQUASME-UHFFFAOYSA-N 4-sulfophthalic acid Chemical compound OC(=O)C1=CC=C(S(O)(=O)=O)C=C1C(O)=O WNKQDGLSQUASME-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 101000777220 Homo sapiens Ubiquitin carboxyl-terminal hydrolase 3 Proteins 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GOZPTOHMTKTIQP-UHFFFAOYSA-N OC1=CC=CC2=CC=C3C=CC(=NC3=C21)C(=O)O Chemical compound OC1=CC=CC2=CC=C3C=CC(=NC3=C21)C(=O)O GOZPTOHMTKTIQP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 102100031287 Ubiquitin carboxyl-terminal hydrolase 3 Human genes 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000003785 benzimidazolyl group Chemical class N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 125000000332 coumarinyl group Chemical class O1C(=O)C(=CC2=CC=CC=C12)* 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000005440 p-toluyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C(*)=O)C([H])([H])[H] 0.000 description 1
- 125000004351 phenylcyclohexyl group Chemical group C1(=CC=CC=C1)C1(CCCCC1)* 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 150000003513 tertiary aromatic amines Chemical class 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は発光性物質からなる
発光層を有し、電界を印可することにより印可電圧を直
接発光エネルギーに変換できる電界発光素子において、
その無機電極と有機層の界面に導電性高分子層を形成
し、ホール注入効率を向上させてなる電界発光素子関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent device having a light-emitting layer made of a light-emitting substance and capable of directly converting an applied voltage to luminous energy by applying an electric field.
The present invention relates to an electroluminescent device in which a conductive polymer layer is formed at an interface between an inorganic electrode and an organic layer to improve hole injection efficiency.
【0002】[0002]
【従来技術】有機材料の電界発光現象はアントラセン単
結晶によって観測された(J.Chem.Phys.3
8(1963)2042)。その後、注入効率の良い溶
液電極を用いることにより比較的強い発光現象を観測す
るに至った(Phys.Rev.Lett.14(19
65)226)。その後精力的に共役の有機ホスト物質
と縮合ベンゼン環を持つ共役の有機活性剤とで有機発光
性物質を形成した研究が行われた(USP3,172,
862,USP3,172,050,USP3,71
0,167、J.Chem.Phys.44(196
6)2902,J.Chem.Phys.50(196
9)14364)。しかしここで挙げられた有機発光物
質はいずれも膜厚が厚く発光に必要な電界が高くなると
いう欠点があった。2. Description of the Related Art An electroluminescent phenomenon of an organic material has been observed with an anthracene single crystal (J. Chem. Phys. 3).
8 (1963) 2042). Thereafter, the use of a solution electrode having good injection efficiency led to the observation of a relatively strong luminescence phenomenon (Phys. Rev. Lett. 14 (19)
65) 226). Thereafter, research was conducted to form an organic light-emitting substance with a conjugated organic host substance and a conjugated organic activator having a condensed benzene ring (US Pat. No. 3,172,172).
862, USP3, 172,050, USP3,71
0,167; Chem. Phys. 44 (196
6) 2902, J. Mol. Chem. Phys. 50 (196
9) 14364). However, each of the organic light-emitting substances mentioned here has a disadvantage that the film thickness is large and the electric field required for light emission is high.
【0003】これに対して蒸着法による薄膜素子の研究
が行われ駆動電圧低減には効果が現れた。しかし、実用
レベルの輝度を得るには至らなかった(Polymer
24(1983)748,Jpn.J.Appl.P
hys.25(1986)L773)。[0003] On the other hand, a study of a thin film element by a vapor deposition method has been conducted, and an effect has been brought about in reducing a driving voltage. However, it has not been possible to obtain a practical level of luminance (Polymer
24 (1983) 748, Jpn. J. Appl. P
hys. 25 (1986) L773).
【0004】近年、イーストマンコダック社から電極間
に電荷輸送層と発光層を蒸着法で形成した素子が提案さ
れ、低駆動電圧での高輝度が実現されるに至った(Ap
pl.Phys.Lett.51(1987)913,
USP4,356,429)。そのご研究は更に活発化
し、キャリア輸送と発光基のを分離した3層型素子など
検討され、有機エレクトロルミネッセンス素子は実用段
階へ入った(Jpn.J.Appl.Phys.27
(1988)L269,L713)。In recent years, Eastman Kodak Company has proposed a device in which a charge transport layer and a light emitting layer are formed between electrodes by a vapor deposition method, and high luminance at a low driving voltage has been realized (Ap.
pl. Phys. Lett. 51 (1987) 913,
USP 4,356,429). The research has been further intensified, and a three-layer type device in which carrier transport and a light emitting group are separated has been studied, and an organic electroluminescent device has entered a practical stage (Jpn. J. Appl. Phys. 27).
(1988) L269, L713).
【0005】[0005]
【発明が解決しようとする課題】しかし、これら上述の
素子は水分吸着や熱的劣化による剥離に弱く、長時間使
用することにより、ダークスポットの増加が著しくなる
ことが分かってきた。これら劣化は無機電極と有機層の
界面での剥離が主な原因とされるが、これら問題は未だ
充分に解決されていない。However, it has been found that these devices are susceptible to peeling due to moisture adsorption or thermal degradation, and that the dark spots increase significantly after long use. These deteriorations are mainly caused by peeling at the interface between the inorganic electrode and the organic layer, but these problems have not been sufficiently solved.
【0006】従って、本発明の目的は、これら有機エレ
クトロルミネッセンス素子の熱的劣化を抑制し、耐熱性
及び耐久性に優れる電界発光素子を提供することにあ
る。Accordingly, it is an object of the present invention to provide an electroluminescent device which suppresses thermal degradation of these organic electroluminescent devices and has excellent heat resistance and durability.
【0007】[0007]
【課題を解決するための手段】本発明者らは上記目的を
達成するために鋭意研究を行った結果、陽極である無機
電極(ITO電極)と有機ホール輸送層の間にバッファ
ー層として無機電極との密着性に優れかつ導電性を有す
る下記の一般式(1)で表されるオリゴアニリン誘導体
をキャリア輸送補助層として1層設けることが耐久性に
対して極めて効果的であることを見いだし本発明に至っ
た。Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, an inorganic electrode as a buffer layer between an inorganic electrode (ITO electrode) as an anode and an organic hole transport layer. It has been found that providing one layer of an oligoaniline derivative represented by the following general formula (1) having excellent adhesion and conductivity as a carrier transport auxiliary layer is extremely effective for durability. Invented the invention.
【0008】この際に、オリゴアニリン誘導体に対して
下記の一般式(4)のスルホン酸誘導体をドーピングす
ることによって導電性を付与し、電極としての性能を与
え、ホール輸送能力を維持したままで、無機電極と有機
層であるホール輸送層との親和性を向上させ、剥離等の
界面現象を抑制するに至り、素子自身の耐久性を向上さ
せるに至った。At this time, conductivity is imparted by doping the oligoaniline derivative with a sulfonic acid derivative of the following general formula (4) to impart performance as an electrode and to maintain the hole transporting ability. In addition, the affinity between the inorganic electrode and the hole transport layer, which is an organic layer, is improved, and interface phenomena such as peeling are suppressed, and the durability of the element itself is improved.
【0009】即ち、本発明は、陽極及び陰極と、これら
の間に狭持された1層もしくは複数層の有機化合物より
構成される電解発光素子に於いて、陽極と有機層の間に
キャリア輸送補助層として一般式(1)That is, the present invention relates to an electroluminescent device comprising an anode and a cathode and one or more layers of an organic compound sandwiched between the anode and the cathode. General formula (1) as auxiliary layer
【0010】[0010]
【化4】 Embedded image
【0011】(式中、R1、R2及びR3はそれぞれ独立
して非置換もしくは置換の一価炭化水素基又はオルガノ
オキシ基を示し、A及びBはそれぞれ独立に一般式
(2)又は一般式(3)(Wherein R 1 , R 2 and R 3 each independently represent an unsubstituted or substituted monovalent hydrocarbon group or an organooxy group, and A and B each independently represent a group represented by the general formula (2) or General formula (3)
【0012】[0012]
【化5】 Embedded image
【0013】で表される二価の基であり、R4〜R11は
それぞれ独立して水素原子、水酸基、非置換もしくは置
換の一価炭化水素基又はオルガノオキシ基、アシル基、
又はスルホン酸基であり、m及びnはそれぞれ独立に1
以上の正数で、m+n≦20を満足する。)で表される
オリゴアニリン誘導体と電子受容性ドーパントとで塩を
形成してなる電気伝導性薄膜を用いたことを特徴とする
電解発光素子に関する。Wherein R 4 to R 11 are each independently a hydrogen atom, a hydroxyl group, an unsubstituted or substituted monovalent hydrocarbon group or an organooxy group, an acyl group,
Or a sulfonic acid group, wherein m and n are each independently 1
With the above positive numbers, m + n ≦ 20 is satisfied. The present invention relates to an electroluminescent device using an electrically conductive thin film formed by forming a salt with the oligoaniline derivative represented by the formula (1) and an electron-accepting dopant.
【0014】[0014]
【発明の実施の形態】本発明に於けるオリゴアニリン誘
導体の合成法方は、特に限定されるものではないが、例
えば、以下に述べる方法により合成することができる。BEST MODE FOR CARRYING OUT THE INVENTION The method for synthesizing an oligoaniline derivative in the present invention is not particularly limited. For example, it can be synthesized by the following method.
【0015】即ち、芳香族アミン類とフェノール類を脱
水縮合反応により縮合反応させる方法もしくは、芳香族
アミン類と芳香族アミン塩酸塩を溶融状態で反応させる
方法などが一般的である。That is, a method in which an aromatic amine and a phenol are subjected to a condensation reaction by a dehydration condensation reaction, or a method in which an aromatic amine and an aromatic amine hydrochloride are reacted in a molten state are generally used.
【0016】一般式(1)のオリゴアニリン部の置換基
R1及びR3〜R11は一般的には水素であるが、溶剤に対
する溶解性を上げるためアルキル基、アルコキシ基、シ
クロヘキシル基、ビフェニル基、ビシクロヘキシル基、
フェニルシクロヘキシル基などが適している。例えばア
ルキル基としては一般的にはメチル基、エチル基、プロ
ピル基等があるが、炭素数としては1から4が一般的で
あるが、炭素数20までの導入は可能である。オリゴア
ニリン部のm及びnの数はそれぞれ独立に1以上の正数
であるが、その導電性を考慮した場合2以上が望まし
く、またその溶剤に対する溶解性を考慮した場合20以
下が望ましい。The substituents R 1 and R 3 to R 11 in the oligoaniline moiety of the general formula (1) are generally hydrogen, but are preferably alkyl, alkoxy, cyclohexyl, biphenyl to increase the solubility in solvents. Group, bicyclohexyl group,
A phenylcyclohexyl group is suitable. For example, an alkyl group generally includes a methyl group, an ethyl group, a propyl group, and the like. The number of carbon atoms is generally 1 to 4, but it is possible to introduce up to 20 carbon atoms. The number of m and n in the oligoaniline moiety is independently a positive number of 1 or more, but preferably 2 or more in consideration of its conductivity, and 20 or less in consideration of its solubility in a solvent.
【0017】置換基R2は、水素原子、水酸基、非置換
もしくは置換の一価炭化水素基又はオルガノオキシ基、
アシル基、炭素数1〜20のアルキル基、又は炭素数1
〜20のアルコキシ基が適している。例えばアルキル基
としては一般的にはメチル基、エチル基、プロピル基等
があるが、炭素数としては1から4が一般的であるが、
炭素数20までの導入は可能である。The substituent R 2 is a hydrogen atom, a hydroxyl group, an unsubstituted or substituted monovalent hydrocarbon group or an organooxy group,
An acyl group, an alkyl group having 1 to 20 carbon atoms, or 1 carbon atom
-20 alkoxy groups are suitable. For example, as an alkyl group, there are generally a methyl group, an ethyl group, a propyl group and the like, and a carbon number of 1 to 4 is generally used.
It is possible to introduce up to 20 carbon atoms.
【0018】以上述べたような製造方法によって得られ
る前記一般式(1)で表される本発明のオリゴアニリン
誘導体とドーパントとのドープ(塩形成)に関しては、
酸として一般式(4)Regarding the doping (salt formation) of the oligoaniline derivative of the present invention represented by the general formula (1) and the dopant obtained by the above-described production method,
Formula (4) as an acid
【化6】 Embedded image
【0019】(Dはベンゼン環、ナフタレン環、アトラ
セン環、フェナントレン環又は複素環を表し、R12、R
13はそれぞれ独立してカルボキシル基若しくはヒドロキ
シル基を表す。)で表される分子間相互作用を起こしや
すいスルホン酸誘導体が望ましい。このような分子とし
て例えばスルホサリチル酸誘導体、例えば5−スルホサ
リチル酸、スルホフタル酸誘導体、例えば4−スルホフ
タル酸などが挙げられる。ドーピング濃度としてはオリ
ゴアニリン誘導体の分子量によって異なるが、一般には
オリゴアニリン誘導体中の窒素原子1個に対して1個以
下のドーパントとなる様に添加することが好ましい。[0019] (D represents a benzene ring, a naphthalene ring, Atorasen ring, a phenanthrene ring or a heterocyclic ring, R 12, R
13 each independently represents a carboxyl group or a hydroxyl group. The sulfonic acid derivative which easily causes the intermolecular interaction represented by the formula (1) is desirable. Such molecules include, for example, sulfosalicylic acid derivatives such as 5-sulfosalicylic acid and sulfophthalic acid derivatives such as 4-sulfophthalic acid. Although the doping concentration varies depending on the molecular weight of the oligoaniline derivative, it is generally preferable to add the dopant so that one or less nitrogen atom in the oligoaniline derivative becomes one dopant or less.
【0020】オリゴアニリン誘導体の塗膜を形成するに
はオリゴアニリン誘導体を溶解するものであれば特に限
定されない。それら溶媒の具体例としては、N−メチル
ピロリドン、N,N−ジメチルアセトアミド、N,N−
ジメチルホルムアミド等を挙げることができる。これら
は、単独でも混合して使用してもよい。更に、単独では
均一溶媒が得られな溶媒であっても、均一溶媒が得られ
る範囲でその溶媒を加えて使用してもよい。その例とし
てはエチルセロソルブ、ブチルセロソルブ、エチルカル
ビトール、ブチルカルビトール、エチルカルビトールア
セテート、エチレングリコール等が挙げられる。The coating film of the oligoaniline derivative is not particularly limited as long as it can dissolve the oligoaniline derivative. Specific examples of these solvents include N-methylpyrrolidone, N, N-dimethylacetamide, N, N-
Dimethylformamide and the like can be mentioned. These may be used alone or as a mixture. Furthermore, even if a solvent which cannot obtain a homogeneous solvent by itself is used, the solvent may be added to the extent that a homogeneous solvent can be obtained. Examples thereof include ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, ethyl carbitol acetate, ethylene glycol and the like.
【0021】この溶液を基材上に塗布し、溶媒を蒸発さ
せることにより基材上にオリゴアニリン塗膜を形成させ
ることができる。この際の温度は溶媒が蒸発すればよ
く、通常は80から150℃で十分である。The oligoaniline coating film can be formed on the substrate by applying the solution on the substrate and evaporating the solvent. The temperature at this time should just evaporate a solvent, and 80-150 degreeC is sufficient normally.
【0022】また本発明のオリゴアニリン薄膜を形成す
る際の塗布方法としてはディップ法、スピンコート法、
転写印刷法、ロールコート、刷毛塗りなどが挙げられる
が、特に限定されるものではない。また、既に一般式
(4)でドーピングされているオリゴアニリン誘導体を
単離した後、真空蒸着法により積層させることもでき
る。その膜厚は、特に限定されるものではないが、外部
発光効率を向上させるためできるだけ薄いことが望まし
く通常0.5〜1000Åが好ましい。The coating method for forming the oligoaniline thin film of the present invention includes a dipping method, a spin coating method,
Examples include a transfer printing method, roll coating, and brush coating, but are not particularly limited. Alternatively, after the oligoaniline derivative already doped with the general formula (4) is isolated, the oligoaniline derivative can be laminated by a vacuum evaporation method. The film thickness is not particularly limited, but is preferably as thin as possible to improve external luminous efficiency, and is usually preferably 0.5 to 1000 °.
【0023】電界発光素子の形状は上記記載のオリゴア
ニリン薄膜を先ず、無機電極であるITO上に形成す
る。この時一般にはITOは逆スパッタリング、オゾン
処理、酸処理等の洗浄処理を行い表面の有機物等の異物
を除去したものが用いられる。このようにして得られた
電極付き基板に電界発光用有機材料を積層する。現在積
層構造には様々な形があるが、特に限定されるものでは
ないが、一般には蒸着法によりホール輸送層、発光層、
キャリア輸送層の順に積層した素子が用いられている。As for the shape of the electroluminescent element, the above-mentioned oligoaniline thin film is first formed on ITO which is an inorganic electrode. At this time, generally, ITO is used which has been subjected to a cleaning treatment such as reverse sputtering, ozone treatment and acid treatment to remove foreign substances such as organic substances on the surface. An organic material for electroluminescence is laminated on the substrate with electrodes thus obtained. Currently, the laminated structure has various shapes, but is not particularly limited, but generally, a hole transport layer, a light emitting layer,
An element laminated in the order of the carrier transport layer is used.
【0024】ホール輸送材料は、特に限定されるもので
はないが、一般には3級芳香族アミンであるN,N,N
−トリス(p−トルイル)アミン(TPD)、1,1−
ビス[(ジ−4−トルイルアミン)フェニル]シクロヘ
キサン、N,N’−ジフェニル−N,N’−ビス(3−
メチルフェニル)(1,1’−ビフェニル)4,4’−
ジアミン、N,N,N’,N’−テトラキス(4−メチ
ルフェニル)(1,1’−ビフェニル)−4,4’−ジ
アミン、N,N’−ビス(1−ナフチル)−N,N’−
ジフェニル−1,1’−ビスフェニル−4,4’−ジア
ミン(α−NPD)、4,4’,4”−トリス(3−メ
チルフェニルアミノ)トリフェニルアミン等が挙げられ
る。このほかにもピラゾリン誘導体が用いられる。The hole transporting material is not particularly limited, but is generally a tertiary aromatic amine such as N, N, N
-Tris (p-toluyl) amine (TPD), 1,1-
Bis [(di-4-toluylamine) phenyl] cyclohexane, N, N′-diphenyl-N, N′-bis (3-
Methylphenyl) (1,1′-biphenyl) 4,4′-
Diamine, N, N, N ', N'-tetrakis (4-methylphenyl) (1,1'-biphenyl) -4,4'-diamine, N, N'-bis (1-naphthyl) -N, N '-
Diphenyl-1,1′-bisphenyl-4,4′-diamine (α-NPD), 4,4 ′, 4 ″ -tris (3-methylphenylamino) triphenylamine and the like. A pyrazoline derivative is used.
【0025】キャリア輸送材料に関しても特に限定され
るものではないが、一般に芳香族縮合環系化合物や金属
錯体化合物が用いられることが多い。例えばトリス(8
−ヒドロキシキノリン)アルミニウム(Alq)、ビス
(10−ヒドロキシベンゾ[h]キノレート)ベリリウ
ム(BeBq2)などの金属錯体系や、1,3,4−オ
キサチアゾール誘導体、1,2,4−トリアゾール誘導
体、ペリレンジカルボキシイミドのビス(ベンズイミダ
ゾール)誘導体、チオピランスルフォン誘導体などが挙
げられる。There is no particular limitation on the carrier transporting material, but generally an aromatic condensed ring compound or a metal complex compound is often used. For example, Tris (8
Metal complex systems such as -hydroxyquinoline) aluminum (Alq), bis (10-hydroxybenzo [h] quinolate) beryllium (BeBq2), 1,3,4-oxathiazole derivatives, 1,2,4-triazole derivatives, Bis (benzimidazole) derivatives of perylenedicarboxyimide, thiopyransulfone derivatives, and the like can be given.
【0026】更に発光材料としては、金属錯体系とし
て、Alq、トリス(5−シアノ−8−ヒドロキシキノ
リン)アルミニウム(Al(Q−CN))等が挙げら
れ、色素としてオキサチアゾール系、例えば、ビフェニ
ル−p−(t−ブチル)フェニル−1,3,4−オキサ
チアゾール、やトリアゾール類、アリレン類、クマリン
類等が挙げられるが、特に限定されるものではない。Examples of the light emitting material include Alq and tris (5-cyano-8-hydroxyquinoline) aluminum (Al (Q-CN)) as metal complex-based materials, and oxathiazole-based dyes such as biphenyl Examples include -p- (t-butyl) phenyl-1,3,4-oxathiazole, triazoles, allylenes, coumarins, and the like, but are not particularly limited.
【0027】これら材料は順次真空蒸着法により積層さ
れその上部に陰極としてMgAg合金が蒸着される。こ
のようにして得られた素子に電界を印可することにより
特定波長の発光を示す電界発光素子が得られる。These materials are sequentially laminated by a vacuum vapor deposition method, and a MgAg alloy is vapor-deposited thereon as a cathode. By applying an electric field to the device thus obtained, an electroluminescent device that emits light of a specific wavelength can be obtained.
【0028】以下に実施例を示し、本発明を更に詳細に
説明するがこれに限定されるものではない。Hereinafter, the present invention will be described in more detail with reference to Examples, but it should not be construed that the invention is limited thereto.
【0029】[0029]
【実施例】実施例1 アニリン5量体EXAMPLES Example 1 Aniline pentamer
【0030】[0030]
【化7】 Embedded image
【0031】をDMF溶媒に溶解させそれに5−スルホ
サリチル酸をドーピングした。ドーピング量及びワニス
作成条件を表1に示す。Was dissolved in DMF solvent and doped with 5-sulfosalicylic acid. Table 1 shows the doping amount and varnish preparation conditions.
【0032】[0032]
【表1】 表1 ワニス作成条件 ─────────────────────────── Run No. アニリン5量体 ドーパント DMF mmol g mmol g g ─────────────────────────── 1 2.2595 1.00 2.260 0.574 29.91 2 2.2595 1.00 4.519 1.148 40.81 3 2.2595 1.00 6.779 1.723 51.74 4 2.2595 1.00 9.038 2.297 62.64 ─────────────────────────── 得られた薄膜の電気的特性を以下の表2に示す。[Table 1] Table 1 Varnish preparation conditions ─────────────────────────── Run No. Aniline pentamer dopant DMF mmol g mmol gg ─────────────────────────── ────────────────────────── 1 2.2595 1.00 2.260 0.574 29.91 2 2.2595 1.00 4.519 1.148 40.81 3 2.2595 1.00 6.779 1.723 51.74 4 2.2595 1.00 9.038 2.297 62.64電 気 The electrical properties of the obtained thin film are shown in Table 2 below.
【0033】[0033]
【表2】 表2 導電性薄膜の電気特性 ──────────────────────────────── Run No. 1 2 3 4 ──────────────────────────────── 易動度 --- 9.19 13.7 2.61 キャリア密度 --- 4.52×1012 8.23×1011 2.19×1010 導電率 --- 2.12×106 8.15×107 1.26×108 イオン化ポテンシャル 5.11 5.08 5.00 4.94 ──────────────────────────────── 上記記載ワニスはスピンコートにより成膜した。その後
焼成を行い導電性薄膜を得た。得られた薄膜は直ちに蒸
着により、発光素子化した。素子構造はITO電極上に
α−NPD、Alqをそれぞれ500Å積層し、その上
部にMgAgを2000Åカソード電極として積層し
た。[Table 2] Table 2 Electrical properties of conductive thin film ──────────────────────────────── Run No. 1 2 3 4 ──────────────────────────────── Mobility --- 9.19 13.7 2.61 Carrier density --- 4.52 × 10 12 8.23 × 10 11 2.19 × 10 10 Conductivity --- 2.12 × 10 6 8.15 × 10 7 1.26 × 10 8 Ionization potential 5.11 5.08 5.00 4.94 ワ The varnish described above was formed by spin coating. Thereafter, firing was performed to obtain a conductive thin film. The obtained thin film was immediately converted into a light emitting element by vapor deposition. The element structure was such that α-NPD and Alq were each stacked on the ITO electrode by 500 °, and MgAg was stacked on the ITO electrode as a 2000 ° electrode.
【0034】このようにして作製された素子について輝
度特性を測定した。その結果を表3に示す。The luminance characteristics of the device thus manufactured were measured. Table 3 shows the results.
【0035】[0035]
【表3】 表3 電界発光素子特性 ──────────────────────────────── Run 1 2 3 4 ──────────────────────────────── 発光開始電圧(V) --- 2.5 2.5 2.5 最高輝度 (cd/m2) --- 16460 (11V) 17540 (11V) 13440(11V) 電流効率 (cd/A) --- 6.40 (11V) 8.56 (11V) 7.27 (11V) ──────────────────────────────── 実施例2 アニリン6量体をDMF溶媒に溶解させそれに5−スル
ホサリチル酸をドーピングした。ドーピング量及びワニ
ス作成条件を表4に示す。[Table 3] Table 3 Characteristics of electroluminescent device ──────────────────────────────── Run 1 2 3 4 ─── ───────────────────────────── Flash start voltage (V) --- 2.5 2.5 2.5 Maximum brightness (cd / m 2 )- -16460 (11V) 17540 (11V) 13440 (11V) Current efficiency (cd / A) --- 6.40 (11V) 8.56 (11V) 7.27 (11V) ────────────── Example 2 Aniline hexamer was dissolved in a DMF solvent and doped with 5-sulfosalicylic acid. Table 4 shows doping amounts and varnish preparation conditions.
【0036】[0036]
【表4】 表4 ワニス作成条件 ─────────────────────────── Run No. アニリン6量体 ドーパント DMF mmol g mol g g ─────────────────────────── 1 1.8738 1.00 1.874 0.476 28.04 2 1.8738 1.00 3.748 1.953 37.11 3 1.8738 1.00 5.621 2.429 46.15 4 1.8738 1.00 7.495 2.905 55.20 5 1.8738 1.00 9.369 3.381 64.24 ─────────────────────────── 得られた薄膜の電気的特性を以下の表5に示す。[Table 4] Table 4 Varnish preparation conditions {Run No. Aniline hexamer dopant DMF mmol g mol gg} ────────────────────────── 1 1.8738 1.00 1.874 0.476 28.04 2 1.8738 1.00 3.748 1.953 37.11 3 1.8738 1.00 5.621 2.429 46.15 4 1.8738 1.00 7.495 2.905 55.20 5 1.8738 1.00 9.369 3.381 64.24 電 気 The electrical properties of the obtained thin film are shown in Table 5 below.
【0037】[0037]
【表5】 表5 導電性薄膜の電気特性 ────────────────────────────── Run No. 1 3 5 ────────────────────────────── 易動度 6.00 21.4 19.1 キャリア密度 1.78×1011 5.10×1010 1.44×109 導電率 1.72×107 1.74×107 3.78×108 イオン化ポテンシャル 5.13 4.98 5.00 ──────────────────────────────[Table 5] Table 5 Electrical properties of conductive thin film ────────────────────────────── Run No. 1 35 ── ──────────────────────────── Mobility 6.00 21.4 19.1 Carrier density 1.78 × 10 11 5.10 × 10 10 1.44 × 10 9 Conductivity 1.72 × 10 7 1.74 × 10 7 3.78 × 10 8 Ionization potential 5.13 4.98 5.00 ──────────────────────────────
【0038】上記記載ワニスはスピンコートにより成膜
した。その後焼成を行い導電性薄膜を得た。得られた薄
膜は直ちに蒸着により、発光素子化した。素子構造はI
TO電極上にα−NPD、Alqをそれぞれ500Å積
層し、その上部にMgAgを2000Åカソード電極と
して積層した。このようにして作製された素子について
輝度特性を測定した。結果を表6に示す。The varnish described above was formed by spin coating. Thereafter, firing was performed to obtain a conductive thin film. The obtained thin film was immediately converted into a light emitting element by vapor deposition. The element structure is I
On the TO electrode, α-NPD and Alq were each laminated by 500 °, and MgAg was laminated thereon as a 2000 ° cathode electrode. The luminance characteristics of the device thus manufactured were measured. Table 6 shows the results.
【0039】[0039]
【表6】 表6 電界発光素子特性 ────────────────────────── Run 1 3 5 ────────────────────────── 発光開始電圧(V) --- 2.5 2.5 最高輝度 (cd/m2) --- 16540 (11V) 17440(11V) 電流効率 (cd/A) --- 5.40 (11V) 5.27 (11V) ──────────────────────────[Table 6] Table 6 Characteristics of electroluminescent device ────────────────────────── Run 1 3 5 ────────── ──────────────── Emission start voltage (V) --- 2.5 2.5 Maximum brightness (cd / m 2 ) --- 16540 (11V) 17440 (11V) Current efficiency (cd / A) --- 5.40 (11V) 5.27 (11V) ──────────────────────────
【0040】比較例1 比較例として補助層を用いていない素子構造ITO/α
−NPD/Alq/MgAgに関してその発光特性を測
定した。ITO以外の各層はそれぞれ真空蒸着法により
形成された。 Run 1 発光開始電圧(V) 2.75 最高輝度 (cd/m2) 6000(14.75V) 電流効率 (cd/A) 5.00(8V)COMPARATIVE EXAMPLE 1 As a comparative example, an element structure ITO / α having no auxiliary layer was used.
The emission characteristics of -NPD / Alq / MgAg were measured. Each layer other than ITO was formed by a vacuum deposition method. Run 1 Light emission start voltage (V) 2.75 Maximum brightness (cd / m 2 ) 6000 (14.75V) Current efficiency (cd / A) 5.00 (8V)
【0041】比較例2 比較例として補助層としてポリフェネチジンにカンファ
スルホン酸をドーピングさせた導電性高分子を用いてた
素子構造ITO/補助層/α−NPD/Alq/MgA
gに関してその発光特性を測定した。補助層はスピンコ
ート法によって形成させた。また、ITO以外の各層は
それぞれ真空蒸着法により形成された。 Run 1 発光開始電圧(V) 2.75 最高輝度 (cd/m2) 10300(15.5V) 電流効率 (cd/A) 5.38(12.25V)COMPARATIVE EXAMPLE 2 As a comparative example, an element structure using a conductive polymer in which polyphenetidine is doped with camphorsulfonic acid as an auxiliary layer ITO / auxiliary layer / α-NPD / Alq / MgA
g was measured for its emission characteristics. The auxiliary layer was formed by a spin coating method. Each layer other than ITO was formed by a vacuum evaporation method. Run 1 Light emission start voltage (V) 2.75 Maximum brightness (cd / m 2 ) 10300 (15.5V) Current efficiency (cd / A) 5.38 (12.25V)
【0042】[0042]
【発明の効果】本発明に用いられるオリゴアニリン誘導
体は合成が容易であり、これを原料の一つとして耐熱
性、被膜強度、塗膜性状に優れ且つ帯電防止性或いは低
電荷蓄積性を有する被膜が得られる。このようなオリゴ
アニリン誘導体をを電界発光素子の電荷注入補助層とし
て用いることで信頼性の高い電解発光素子を得ることが
できる。The oligoaniline derivative used in the present invention is easy to synthesize, and is used as a raw material to form a coating having excellent heat resistance, coating strength, coating properties and antistatic properties or low charge accumulation. Is obtained. By using such an oligoaniline derivative as a charge injection auxiliary layer of an electroluminescent device, a highly reliable electroluminescent device can be obtained.
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3K007 AB02 AB03 AB06 AB11 AB15 AB18 CA01 CB01 DA01 DB03 EA02 EB00 FA01 4J043 PA04 PC016 PC066 PC116 PC186 QB02 ZB21 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB02 AB03 AB06 AB11 AB15 AB18 CA01 CB01 DA01 DB03 EA02 EB00 FA01 4J043 PA04 PC016 PC066 PC116 PC186 QB02 ZB21
Claims (5)
た1層もしくは複数層の有機化合物より構成される電解
発光素子に於いて、陽極と有機層の間にキャリア輸送補
助層として一般式(1) 【化1】 (式中、R1、R2及びR3はそれぞれ独立して非置換も
しくは置換の一価炭化水素基又はオルガノオキシ基を示
し、A及びBはそれぞれ独立に一般式(2)又は一般式
(3) 【化2】 で表される二価の基であり、R4〜R11はそれぞれ独立
して水素原子、水酸基、非置換もしくは置換の一価炭化
水素基又はオルガノオキシ基、アシル基、又はスルホン
酸基であり、m及びnはそれぞれ独立に1以上の正数
で、m+n≦20を満足する。)で表されるオリゴアニ
リン誘導体と電子受容性ドーパントとで塩を形成してな
る電気伝導性薄膜を用いたことを特徴とする電解発光素
子。1. An electroluminescent device comprising an anode, a cathode, and one or more layers of an organic compound sandwiched between the anode and the cathode, which is generally used as a carrier transport auxiliary layer between the anode and the organic layer. Formula (1) (Wherein R 1 , R 2 and R 3 each independently represent an unsubstituted or substituted monovalent hydrocarbon group or an organooxy group, and A and B each independently represent the general formula (2) or the general formula ( 3) Wherein each of R 4 to R 11 is independently a hydrogen atom, a hydroxyl group, an unsubstituted or substituted monovalent hydrocarbon group or an organooxy group, an acyl group, or a sulfonic acid group. , M and n are each independently 1 or more positive numbers, and satisfy m + n ≦ 20. An electroluminescent device using an electrically conductive thin film formed by forming a salt with the oligoaniline derivative represented by the formula (1) and an electron-accepting dopant.
酸基、非置換もしくは置換の一価炭化水素基又はオルガ
ノオキシ基、アシル基、炭素数1〜20のアルキル基、
又は炭素数1〜20のアルコキシ基である請求項1記載
の電界発光素子。R 2 in the general formula (1) is a hydrogen atom, a hydroxyl group, an unsubstituted or substituted monovalent hydrocarbon group or an organooxy group, an acyl group, an alkyl group having 1 to 20 carbon atoms,
The electroluminescent device according to claim 1, which is an alkoxy group having 1 to 20 carbon atoms.
ナントレン環又は複素環を表し、R12、R13はそれぞれ
独立してカルボキシル基若しくはヒドロキシル基を表
す。)で表されるスルホン酸誘導体を用いたことを特徴
とする請求項1又は2記載の電界発光素子。3. A compound represented by the following general formula (4): (D represents a benzene ring, a naphthalene ring, an athracene ring, a phenanthrene ring or a heterocyclic ring, and R 12 and R 13 each independently represent a carboxyl group or a hydroxyl group.) The electroluminescent device according to claim 1, wherein:
薄膜が一般式(1)のオリゴアニリン誘導体と一般式
(4)のスルホン酸誘導体を有機溶剤に分散もしくは溶
解させたものをスピンコートもしくはディッピングによ
り形成された請求項1乃至3のいずれかの請求項に記載
の電界発光素子。4. The conductive thin film according to claim 1, wherein the thin film is obtained by dispersing or dissolving an oligoaniline derivative of the general formula (1) and a sulfonic acid derivative of the general formula (4) in an organic solvent. The electroluminescent device according to claim 1, wherein the electroluminescent device is formed by dipping.
薄膜が一般式(1)のオリゴアニリン誘導体と一般式
(4)のスルホン酸誘導体を有機溶剤に分散もしくは溶
解させドーピングしその後、溶剤から単離したものを蒸
着法により形成された請求項1乃至3のいずれかの請求
項に記載の電界発光素子。5. The conductive thin film according to claim 1, wherein the thin film is doped with an oligoaniline derivative represented by the general formula (1) and a sulfonic acid derivative represented by the general formula (4) dispersed or dissolved in an organic solvent. 4. The electroluminescent device according to claim 1, wherein the isolated device is formed by a vapor deposition method.
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|---|---|---|---|
| JP2000341775A JP4868099B2 (en) | 2000-11-09 | 2000-11-09 | Electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000341775A JP4868099B2 (en) | 2000-11-09 | 2000-11-09 | Electroluminescent device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002151272A true JP2002151272A (en) | 2002-05-24 |
| JP2002151272A5 JP2002151272A5 (en) | 2011-02-17 |
| JP4868099B2 JP4868099B2 (en) | 2012-02-01 |
Family
ID=18816463
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000341775A Expired - Lifetime JP4868099B2 (en) | 2000-11-09 | 2000-11-09 | Electroluminescent device |
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| Country | Link |
|---|---|
| JP (1) | JP4868099B2 (en) |
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