JP2002260988A - Electron beam exposure system, electron beam shaping device, and method for electron beam exposure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam exposure system, an electron beam shaping device, and a method for electron beam exposure by which the cross-sectional forms of a plurality of electron beams can be shaped with accuracy. SOLUTION: The electron beam exposure system which exposes a wafer to the plurality of electron beams has an electron beam generating section which generates the electron beams and an electron beam shaping section which shapes the electron beams to have desired cross-sectional shapes. The electron beam shaping section has a substrate, a plurality of shaping openings which are made through the substrate so as to cause at least parts of the electron beams to respectively pass through the holes, and a substrate heating section which heats the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an electron beam exposure apparatus, an electron beam forming apparatus, and an electron beam exposure method. In particular, the present invention relates to an electron beam exposure apparatus, an electron beam forming apparatus, and an electron beam exposure method for precisely shaping the cross-sectional shapes of a plurality of electron beams.

[0002]

2. Description of the Related Art In an electron beam exposure apparatus for exposing a wafer with an electron beam, an electron beam shaping means includes a first shaping member having an opening for shaping a cross-sectional shape of the electron beam by allowing the electron beam to pass therethrough. It has two forming members and a forming / deflecting unit for independently deflecting the electron beam passing through the first forming member. The shaping deflection units independently deflect the electron beam shaped into a rectangular shape in the first shaping member so as to irradiate a desired position on the second shaping member. The second forming member including the opening having the rectangular shape further shapes the electron beam having the rectangular cross-sectional shape applied to the second forming member into the electron beam having the desired cross-sectional shape to be irradiated on the wafer. .

[0003]

However, as the cross-sectional shape of the electron beam to be irradiated on the wafer changes, the amount of electrons of the electron beam to be cut off by the second forming member changes. Therefore, the second molded member is not thermally stable, and repeatedly expands and contracts, and the opening is deformed.
Further, in an electron beam exposure apparatus that exposes a wafer with a plurality of electron beams, the position of the forming opening of the second forming member varies with respect to the optical axes of the plurality of electron beams. Cannot be formed into a desired cross-sectional shape.

Accordingly, the present invention provides an electron beam exposure apparatus, an electron beam forming apparatus,
And an electron beam exposure method.
This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0005]

According to a first aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, comprising: an electron beam generator for generating a plurality of electron beams; And an electron beam shaping unit for shaping each of the plurality of electron beams into a desired cross-sectional shape. The electron beam shaping unit is provided on the substrate and at least a part of each of the plurality of electron beams passes through the substrate. It has a plurality of forming openings and a substrate heating unit for heating the substrate.

The substrate heating section may include a heating wire provided on the substrate and a heating control section for supplying a current to the heating wire based on a cross-sectional shape of the electron beam passing through the forming opening.

[0007] The heating wire is provided around each of the plurality of forming openings, and the heating control unit determines a plurality of electron beams passing through each of the plurality of forming openings based on a cross-sectional shape of each of the plurality of electron beams. A current may be supplied to each of the heating wires.

A plurality of heating wires may be provided around each of the plurality of forming openings, and the heating control unit may supply a current to each of the plurality of heating wires.

The heating wire is provided on the outer periphery of the plurality of forming openings, and the heating control unit supplies a current to the heating wire based on a cross-sectional shape of the plurality of electron beams passing through the plurality of forming openings. Is also good. The heating wire may be a twisted pair coil.

The apparatus further includes a shaping deflecting unit for deflecting each of the plurality of electron beams with respect to each of the plurality of shaping openings, and a deflection control unit for controlling the shaping deflecting unit based on deflection control data. The control unit may supply a current to the heating wire based on the deflection control data.

[0011] The heating wire may be adhered to the surface of the substrate. The substrate may include a first substrate layer and a second substrate layer, and the heating wire may be sandwiched between the first substrate layer and the second substrate layer.

The electron beam shaping section may further include a temperature measuring section for measuring a temperature of the substrate, and the heating control section may supply a current to the heating wire based on the measured temperature of the substrate.

According to a second embodiment of the present invention, there is provided an electron beam forming apparatus for forming each of a plurality of electron beams into a desired cross-sectional shape, comprising: a substrate;
The apparatus includes a forming opening through which at least a part of each of the plurality of electron beams passes, and a substrate heating unit that heats the substrate.

According to a third embodiment of the present invention, there is provided an electron beam exposure method for exposing a wafer with a plurality of electron beams, comprising the steps of: generating a plurality of electron beams; Heating an electron beam forming member provided with a plurality of forming openings for shaping the shape based on the cross-sectional shape of the plurality of electron beams to be irradiated on the wafer; and irradiating the electron beam forming member with the plurality of electron beams Then, the method includes a step of shaping the cross-sectional shapes of the plurality of electron beams, and a step of irradiating the wafer with the plurality of electron beams whose cross-sectional shapes are formed and exposing the wafer.

The above summary of the present invention does not list all of the necessary features of the present invention, and a sub-combination of these features may also be an invention.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the claimed invention and have the features described in the embodiments. Not all combinations are essential to the solution of the invention.

FIG. 1 shows the configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on the wafer 44 with an electron beam, and a control system 140 that controls the operation of each component included in the exposure unit 150.

The exposure section 150 generates a plurality of electron beams inside the housing 8 and forms an electron beam forming means 110 for shaping the cross-sectional shape of the electron beam as desired, and determines whether or not to irradiate the wafer 44 with the plurality of electron beams. And an electron optical system including a wafer projection system 114 for adjusting the direction and size of the image of the pattern transferred to the wafer 44. The exposure unit 150 includes a stage system including a wafer stage 46 on which the wafer 44 on which a pattern is to be exposed is mounted, and a wafer stage driving unit 48 for driving the wafer stage 46.

The electron beam shaping means 110 has an electron beam generator 10 for generating a plurality of electron beams, and a plurality of openings for shaping the cross-sectional shape of the irradiated electron beam by passing the electron beams. A first electron beam shaping unit 14 and a second electron beam shaping unit 22; a first multi-axis electron lens 16 for independently focusing a plurality of electron beams and adjusting a focus of the plurality of electron beams; A first shaping / deflecting unit and a second shaping / deflecting unit for independently deflecting the plurality of electron beams passing through the unit; The second electron beam forming unit 22 includes a substrate, a plurality of forming openings provided in the substrate, and a substrate heating unit that heats the substrate.

The irradiation switching means 112 independently focuses the plurality of electron beams, adjusts the focal points of the plurality of electron beams, and deflects the plurality of electron beams independently. A blanking electrode array 26 for independently switching whether each electron beam is irradiated on the wafer 44 or not for each electron beam.
And an electron beam shielding member 28 that includes a plurality of openings through which the electron beam passes and shields the electron beam deflected by the blanking electrode array 26. In another example, blanking electrode array 26 may be a blanking aperture array device.

The wafer projection system 114 independently focuses the plurality of electron beams and reduces the irradiation diameter of the electron beam, and the third multi-axis electron lens 34 independently focuses the plurality of electron beams. A fourth multi-axis electron lens 36 for adjusting the focus of the electron beam, a deflecting unit 38 for deflecting the plurality of electron beams to desired positions on the wafer 44 independently for each electron beam, and an object for the wafer 44. A fifth multi-axis electron lens 52 that functions as a lens and independently focuses a plurality of electron beams;

The control system 140 includes an individual control unit 120 and an overall control unit 130. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, and a blanking electrode array control unit 86.
And a deflection controller 92 and a wafer stage controller 96. The general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120.

The electron beam controller 80 controls the electron beam generator 10. The multi-axis electron lens control unit 82
The current supplied to the multi-axis electron lens 16, the second multi-axis electron lens 24, the third multi-axis electron lens 34, the fourth multi-axis electron lens 36, and the fifth multi-axis electron lens 52 is controlled. The shaping / deflecting controller 84 controls the first shaping / deflecting unit 18 and the second shaping / deflecting unit 20. Blanking electrode array controller 86
Controls the voltage applied to the deflection electrodes included in the blanking electrode array 26. The deflection control unit 92 includes the deflection unit 3
8 controls the voltage applied to the deflection electrodes of the plurality of deflectors. The wafer stage control unit 96 controls the wafer stage drive unit 48 to move the wafer stage 46 to a predetermined position.

The electron beam exposure apparatus 10 according to the present embodiment
The operation of 0 will be described. First, the electron beam generator 1
0 generates a plurality of electron beams. The first electron beam shaping unit 14 converts a plurality of electron beams generated by the electron beam generating unit 10 and applied to the first electron beam shaping unit 14 into a plurality of apertures provided in the first electron beam shaping unit 14. To form. In another example, a plurality of electron beams may be generated by further including a unit that divides the electron beam generated in the electron beam generation unit 10 into a plurality of electron beams.

The first multi-axis electron lens 16 independently focuses a plurality of rectangularly shaped electron beams, and independently adjusts the focal point of the electron beam with respect to the second electron beam forming section 22 for each electron beam. The first shaping / deflecting unit 18 independently deflects a plurality of electron beams shaped into a rectangular shape in the first electron beam shaping unit 14 so as to irradiate a desired position in the second electron beam shaping unit.

The second shaping / deflecting unit 20 includes the first shaping / deflecting unit 1
The plurality of electron beams deflected in step 8 are deflected in directions substantially perpendicular to the second electron beam shaping unit 22, respectively.
Irradiate the electron beam forming unit 22. The second electron beam shaping unit 22 including a plurality of openings having a rectangular shape,
The plurality of electron beams having a rectangular cross-sectional shape applied to the second electron beam forming unit 22 are further shaped into electron beams having a desired cross-sectional shape to be applied to the wafer 44.
At this time, in the second electron beam shaping unit 22, the substrate heating unit heats the substrate provided with the shaping opening on the basis of the cross-sectional shape of the electron beam to be irradiated on the wafer 44, and keeps the shape of the substrate constant. To keep.

The second multi-axis electron lens 24 independently focuses the plurality of electron beams, and adjusts the focus of the electron beam on the blanking electrode array 26 independently.
The plurality of electron beams whose focus has been adjusted by the second multi-axis electron lens 24 pass through a plurality of apertures included in the blanking electrode array 26.

The blanking electrode array control unit 86 controls whether or not to apply a voltage to the deflection electrodes provided near each aperture in the blanking electrode array 26. The blanking electrode array 26 switches whether or not to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode.

The electron beam not deflected by the blanking electrode array 26 passes through the third multi-axis electron lens 34. Then, the third multi-axis electron lens 34 reduces the diameter of the electron beam passing through the third multi-axis electron lens 34. The reduced electron beam is supplied to the electron beam shielding member 2.
8 through the opening. Further, the electron beam shielding member 28 shields the electron beam deflected by the blanking electrode array 26. The electron beam that has passed through the electron beam shielding member 28 enters a fourth multi-axis electron lens 36. Then, the fourth multi-axis electron lens 36 independently focuses the incident electron beams, and adjusts the focus of the electron beams with respect to the deflection unit 38, respectively. The electron beam whose focus has been adjusted by the fourth multi-axis electron lens 36 enters the deflection unit 38.

The deflection control section 92 controls a plurality of deflectors included in the deflection section 38 and independently deflects each electron beam incident on the deflection section 38 to a position to be irradiated on the wafer 44. I do. Fifth multi-axis electron lens 52
Adjusts the focal point of each electron beam passing through the fifth multi-axis electron lens 52 with respect to the wafer 44. Each electron beam having a cross-sectional shape to be irradiated on the wafer 44 is irradiated to a desired position to be irradiated on the wafer 44.

During the exposure process, the wafer stage driving unit 48
Preferably, the wafer stage 46 is continuously moved in a certain direction based on an instruction from the wafer stage control unit 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is formed into a shape to be irradiated on the wafer 44,
An aperture through which an electron beam to be irradiated on the wafer 44 is passed is defined, and each electron beam is deflected to a position to be irradiated on the wafer 44 by the deflecting unit 38, thereby exposing a desired circuit pattern on the wafer 44. be able to.

FIG. 2 shows the configuration of the second electron beam shaping unit 22 according to one embodiment of the present invention. The second electron beam shaping unit 22 includes a substrate 200, a plurality of shaping openings 202 provided in the substrate 200 and passing at least a part of each of the plurality of electron beams, a substrate heating unit 208 for heating the substrate 200, Is provided. The substrate heating unit 208 includes the substrate 2
00 based on the heating wire 204 provided in the heating wire 204 and the cross-sectional shape of the electron beam passing through the forming opening 202.
4 that supplies a current to the heating control unit 4.

The heating wire 204 has a plurality of forming openings 202.
Is preferably provided around each. Then, it is desirable that the heating control unit 206 supplies a current to each of the plurality of heating wires 204 based on the cross-sectional shape of each of the plurality of electron beams passing through each of the plurality of forming openings 202. Specifically, the heating control unit 20
6 is preferable to supply a current to the plurality of heating wires 204 so that the amount of heat applied to the substrate 200 is always constant. That is, the heating control unit 206 controls the heating wires 2 provided around the respective forming openings 202 based on the amount of electrons of the electron beam passing through the respective forming openings 202.
Preferably, a current is supplied to 04. By keeping the amount of heat applied to the substrate 200 constant, thermal deformation of the substrate 200 can be reduced.

The heating wire 204 is connected to the heating wire 204.
So that the contact surface between the substrate and the substrate 200 is as large as possible.
It is desirable to be adhered to the surface of the substrate 200. By increasing the contact surface between the heating wire 204 and the substrate 200, heat generated from the heating wire 204 can be efficiently transferred to the substrate 200.
Can be transmitted to Further, it is desirable that the heating wire 204 be a twisted pair. By making the heating wire 204 a twisted pair, the magnetic field generated by the heating wire 204 can be reduced, and the influence of the magnetic field generated from the heating wire 204 on the electron beam can be reduced.

FIG. 3 shows a part of the electron beam shaping means 110 and the control system 140 according to one embodiment of the present invention. The general control unit 130 generates exposure data, which is information on a pattern to be exposed, and controls the exposure processing of the electron beam exposure apparatus 100 based on the exposure data. Then, based on the exposure data generated by the overall control unit 130, the heating control unit 206
Supply current to each of them.

The shaping / deflecting controller 84 controls the first shaping / deflecting unit 18 and the second shaping / deflecting unit 2 based on the exposure data.
Deflection control data for determining the deflection amount of 0 is generated, and the first shaping / deflecting unit 18 and the second shaping / deflecting unit 20 are controlled based on the deflection control data. Then, the first shaping deflecting unit 18 and the second shaping deflecting unit 22 deflect the electron beam based on the deflection control data and irradiate the electron beam to a desired position. And
The electron beam applied to a desired position on the substrate 200 passes through the forming opening 202 and is formed into a desired cross-sectional shape.

Therefore, since the cross-sectional shape of the electron beam to be irradiated on the wafer is determined by the deflection control data, the heating control unit 206 receives the deflection control data from the shaping deflection control unit 84, A current may be supplied to each of the plurality of heating wires 204 based on this. Further, the heating control unit 206 includes the first shaping / deflecting unit 18.
A current may be supplied to each of the plurality of heating wires 204 in accordance with the timing at which the second shaping / deflecting unit 20 deflects the electron beam.

The second electron beam shaping section 22 may further include a temperature measuring section 210 for measuring the temperature of the substrate 200. Then, the heating control unit 206 controls the temperature measurement unit 2
Based on the temperature of the substrate 200 measured by 10
A current may be supplied to the heating wire 204. Further, the temperature measuring section 210 may measure the temperature at a plurality of locations on the substrate 200. Then, the heating control unit 206 controls the substrate 20
0, a plurality of heating wires 2
04 may be supplied with current. Heating control unit 2
In step 06, the temperature of the substrate 200 can be accurately adjusted by supplying a current to the heating wire based on the measured temperature of the substrate 200.

The heating control unit 206 supplies a current to each heating wire 204 by arbitrarily combining the above-described method based on the exposure data, the method based on the deflection control data, and the method based on the temperature of the substrate 200. Is also good. As described above, by controlling the current supplied by the heating control unit 206, a temperature change of the substrate 200 can be reduced, and expansion and contraction of the substrate 200 due to the temperature change can be reduced.
Therefore, according to the electron beam exposure apparatus 100 of the present embodiment, the cross-sectional shape of the electron beam can be accurately formed, and the pattern can be accurately exposed on the wafer.

FIG. 4 shows another example of the configuration of the second electron beam shaping unit 22. The heating wire 204 has a plurality of forming openings 2.
02 may be provided around each of them. Then, the heating control unit 206 may supply a current to each of the plurality of heating wires 204 based on the cross-sectional shape of each of the electron beams passing through each of the plurality of forming openings 202. A plurality of heating wires 20 are formed around the forming opening 202.
By providing 4, it is possible to heat only the portion of the periphery of the forming opening 202 where the electron beam is not blocked, and the temperature can be adjusted in detail.

FIG. 5 shows another example of the configuration of the second electron beam shaping section 22. The heating wire 204 has a plurality of forming openings 2.
02 may be provided on the outer periphery. And the heating control unit 2
06 may supply a current to the heating wire 204 based on the cross-sectional shape of a plurality of electron beams passing through the plurality of forming openings 202. In another example, the heating wire 204 may be provided so as to surround a predetermined number of the forming openings 202. Further, the heating wire 204 may be provided in a lattice shape between the plurality of forming openings 202.

FIG. 6 shows a cross section of a substrate 200 according to another example. The substrate 200 includes a first substrate layer 212 and a second substrate layer 2.
14 may be provided. The heating wire 204 may be provided so as to be sandwiched between the first substrate layer 212 and the second substrate layer 214. The substrate 200 has a multilayer structure,
The heating wire 204 may be provided between each of the plurality of substrate layers. As described above, the heating wire 204 is sandwiched between the substrate layers, and the substrate 200 and the heating wire 204 are brought into close contact with each other.
00 can be transmitted.

Although the present invention has been described with reference to the embodiment, the technical scope of the present invention is not limited to the scope described in the above embodiment. Various changes or improvements can be added to the above embodiment. It is apparent from the description of the appended claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.

[0044]

As is apparent from the above description, according to the electron beam exposure apparatus 100 of the present invention, it is possible to accurately form a cross-sectional shape of a plurality of electron beams, and to accurately expose a pattern on a wafer. Can be.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.

FIG. 2 is a diagram showing a configuration of a second electron beam shaping unit 22 according to one embodiment of the present invention.

FIG. 3 is a diagram showing a part of an electron beam shaping unit 110 and a control system 140 according to one embodiment of the present invention.

FIG. 4 is a diagram showing another example of the configuration of the second electron beam shaping unit 22.

FIG. 5 is a diagram showing another example of the configuration of the second electron beam shaping unit 22.

FIG. 6 is a diagram showing a cross section of a substrate 200 according to another example.

[Explanation of symbols]

8... Housing, 10... Electron beam generator, 14.
Electron beam forming part, 16 first multi-axis electron lens, 18
..The first shaping deflection unit, 20..the second shaping deflection unit, 22.
A second electron beam shaping unit, 24 a second multi-axis electron lens, 26 a blanking electrode array, 28 an electron beam shielding member, 34 a third multi-axis electron lens, 36
4th multi-axis electron lens, 38 deflecting unit, 44 wafer, 46 wafer stage, 48 wafer stage driving unit, 52 fifth multi-axis electron lens, 80 electron beam control unit 82 ··· Multi-axis electron lens control unit, 84 ···
Molding / deflection controller, 86 ... Blanking electrode array controller, 92 ... Deflection controller, 96 ... Wafer stage controller, 100 ... Electron beam exposure apparatus, 110 ... Electron beam shaping means, 112 ... Irradiation Switching means, 114: wafer projection system, 120: individual control system, 130: general control unit, 140: control system, 150: exposure unit, 200
..Substrate, 202..forming opening, 204..heating wire,
206: heating control unit, 208: substrate heating unit, 210
..Temperature measurement part, 212..first substrate layer, 214..second substrate layer

Claims (12)

[Claims] 1. An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, comprising: an electron beam generator for generating the plurality of electron beams; and forming each of the plurality of electron beams into a desired cross-sectional shape. An electron beam shaping unit, wherein the electron beam shaping unit comprises: a substrate; a plurality of shaping openings provided on the substrate, at least a part of each of the plurality of electron beams passing therethrough; and heating the substrate. An electron beam exposure apparatus, comprising: 2. The heating control section for supplying a current to the heating wire based on the heating wire provided on the substrate and the cross-sectional shape of the electron beam passing through the forming opening. 2. The electron beam exposure apparatus according to claim 1, comprising: 3. The heating wire is provided around each of the plurality of forming openings, and the heating control unit is configured to control each of the plurality of electron beams passing through each of the plurality of forming openings. The electron beam exposure apparatus according to claim 2, wherein a current is supplied to each of the plurality of heating wires based on a cross-sectional shape. 4. The heating wire is provided in plurality around each of the plurality of forming openings, and the heating control unit supplies a current to each of the plurality of heating wires. 4. The electron beam exposure apparatus according to 3. 5. The heating wire is provided on an outer periphery of the plurality of forming openings, and the heating control unit is configured to determine, based on the cross-sectional shape of the plurality of electron beams passing through the plurality of forming openings, The electron beam exposure apparatus according to claim 2, wherein a current is supplied to the heating wire. 6. The electron beam exposure apparatus according to claim 2, wherein the heating wire is a twisted wire. 7. A shaping / deflecting unit for deflecting each of the plurality of electron beams with respect to each of the plurality of shaping openings, and a deflection control unit for controlling the shaping / deflecting unit based on deflection control data. 3. The electron beam exposure apparatus according to claim 2, wherein the heating control unit supplies a current to the heating wire based on the deflection control data. 4. 8. The electron beam exposure apparatus according to claim 2, wherein the heating wire is adhered to a surface of the substrate. 9. The substrate according to claim 1, wherein the substrate includes a first substrate layer and a second substrate layer, and the heating wire is sandwiched between the first substrate layer and the second substrate layer. 3. The electron beam exposure apparatus according to 2. 10. The electron beam shaping unit further includes a temperature measuring unit for measuring a temperature of the substrate, wherein the heating control unit supplies a current to the heating wire based on the measured temperature of the substrate. The electron beam exposure apparatus according to claim 2, wherein: 11. An electron beam shaping apparatus for shaping each of a plurality of electron beams into a desired cross-sectional shape, comprising: a substrate; and at least a part of each of the plurality of electron beams is provided on the substrate. An electron beam forming apparatus, comprising: a forming opening; and a substrate heating unit for heating the substrate. 12. An electron beam exposure method for exposing a wafer with a plurality of electron beams, comprising: generating the plurality of electron beams; and forming a plurality of forming openings for forming respective cross-sectional shapes of the plurality of electron beams. The electron beam molding member provided with the part,
Heating the plurality of electron beams based on the cross-sectional shape of the plurality of electron beams to be irradiated on the wafer; and forming the cross-sectional shape of the plurality of electron beams by irradiating the plurality of electron beams to the electron beam forming member. An electron beam exposure method, comprising: irradiating the wafer with the plurality of electron beams having a cross-sectional shape, and exposing the wafer.