JP2002217390A - Laminated body manufacturing method, semiconductor device manufacturing method, and semiconductor device - Google Patents
Laminated body manufacturing method, semiconductor device manufacturing method, and semiconductor deviceInfo
- Publication number
- JP2002217390A JP2002217390A JP2001014351A JP2001014351A JP2002217390A JP 2002217390 A JP2002217390 A JP 2002217390A JP 2001014351 A JP2001014351 A JP 2001014351A JP 2001014351 A JP2001014351 A JP 2001014351A JP 2002217390 A JP2002217390 A JP 2002217390A
- Authority
- JP
- Japan
- Prior art keywords
- separation layer
- layer
- manufacturing
- substrate
- laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000010410 layer Substances 0.000 claims abstract description 191
- 238000000926 separation method Methods 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 67
- 239000012790 adhesive layer Substances 0.000 claims abstract description 35
- 238000012546 transfer Methods 0.000 claims abstract description 27
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 67
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 238000000016 photochemical curing Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- 230000032798 delamination Effects 0.000 claims description 3
- 238000007796 conventional method Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 13
- -1 silicic acid compound Chemical class 0.000 description 13
- 239000002585 base Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229920000620 organic polymer Polymers 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229920000728 polyester Polymers 0.000 description 5
- 229920000098 polyolefin Polymers 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 229920001707 polybutylene terephthalate Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000123 paper Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001643 poly(ether ketone) Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 241000398147 Aleurodiscus amorphus Species 0.000 description 1
- 229910004709 CaSi Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004709 Chlorinated polyethylene Substances 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 208000000474 Poliomyelitis Diseases 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910005644 SnTi Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical class [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UFRKOOWSQGXVKV-UHFFFAOYSA-N ethene;ethenol Chemical compound C=C.OC=C UFRKOOWSQGXVKV-UHFFFAOYSA-N 0.000 description 1
- 239000004715 ethylene vinyl alcohol Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Micromachines (AREA)
- Thin Film Transistor (AREA)
Abstract
(57)【要約】
【課題】基板上に順次、層や領域を形成する、従来の半
導体装置などの積層体の製造方法は、高温処理などの過
激な条件下で行う工程を含むため、例えば、積層体が配
置される基板や積層体に含まれる部材は制限されること
がある。そこで、様々な基板や部材を含む積層体の製造
に適用できる積層体の製造方法を提供する。
【解決手段】第１の基板上に順次、第１の分離層、中間
層及び被転写体を形成し、前記被転写体と第２の基板上
に形成された第２の分離層とを第１の接着層を介して接
着する。次に前記第１の分離層に対して光照射を行うこ
とにより、前記第１の分離層における剥離を誘起して、
前記第１の基板を脱離させる。次に第３の基板と前記中
間層とを第２の接着層を介して接着する。次に前記第２
の分離層に対して光照射を行い、前記第２の分離層にお
ける剥離を誘起し、前記第２の基板を脱離させる。
(57) Abstract: A conventional method for manufacturing a laminated body such as a semiconductor device in which layers and regions are sequentially formed on a substrate includes a step performed under extreme conditions such as high-temperature treatment. In some cases, the substrate on which the laminate is arranged and the members included in the laminate are limited. Therefore, a method of manufacturing a laminate that can be applied to the production of a laminate including various substrates and members is provided. A first separation layer, an intermediate layer, and a transfer object are sequentially formed on a first substrate, and the transfer object and a second separation layer formed on a second substrate are separated from each other by a first method. Adhesion is performed through the first adhesive layer. Next, light irradiation is performed on the first separation layer to induce separation in the first separation layer,
The first substrate is detached. Next, a third substrate and the intermediate layer are bonded via a second bonding layer. Next, the second
Irradiating the second separation layer with light to induce separation in the second separation layer, and detach the second substrate.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
に好適な積層体の製造方法及び半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a laminate suitable for manufacturing a semiconductor device and a semiconductor device.
【０００２】[0002]
【従来の技術】基板上に順次、層や領域を形成する、従
来の半導体装置などの積層体の製造方法は、高温処理な
どの過激な条件下で行う工程を含む。例えば、代表的な
半導体装置の一つであるMOS素子は、一つの基板上に順
次、半導体層、ゲート絶縁層、さらにゲート電極を形成
することにより製造されるが、ゲート絶縁層や半導体層
の形成工程は、通常、高温処理を必要とする。2. Description of the Related Art A conventional method for manufacturing a laminated body such as a semiconductor device in which layers and regions are sequentially formed on a substrate includes a step performed under extreme conditions such as high-temperature processing. For example, a MOS element, which is one of the typical semiconductor devices, is manufactured by sequentially forming a semiconductor layer, a gate insulating layer, and a gate electrode on one substrate. The forming process usually requires high temperature treatment.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
積層体の製造方法では、積層体が配置される基板や積層
体に含まれる部材は制限されることがある。例えば、従
来の半導体装置などの積層体の製造方法は、軟化点や融
点の低い材料を基板あるいは部材とする半導体装置の製
造に適用することは困難であった。そこで、本発明の第
１の目的は、様々な基板や部材を含む積層体の製造に適
用できる積層体の製造方法を提供することである。本発
明の第２の目的は、様々な基板や部材を含む半導体装置
の製造に適用できる半導体装置の製造方法を提供するこ
とである。本発明の第３の目的は様々な用途に対応する
ことのできる半導体装置を得ることである。However, in the conventional method for manufacturing a laminated body, the substrate on which the laminated body is arranged and the members included in the laminated body are sometimes limited. For example, it has been difficult to apply the conventional method for manufacturing a laminate such as a semiconductor device to the manufacture of a semiconductor device using a material having a low softening point or melting point as a substrate or a member. Therefore, a first object of the present invention is to provide a method for manufacturing a laminate that can be applied to the production of a laminate including various substrates and members. A second object of the present invention is to provide a method of manufacturing a semiconductor device that can be applied to the manufacture of a semiconductor device including various substrates and members. A third object of the present invention is to obtain a semiconductor device which can support various uses.
【０００４】[0004]
【課題を解決するための手段】本発明の第１の積層体の
製造方法は、第１の分離層を含む第１の基材上に、第２
の基材を配置する工程と、前記第２の基材と、第２の分
離層を含む第３の基材と、を第１の接着層を介して接着
する工程と、光照射を行うことにより、前記第1分離層
の層内及び前記第１の分離層と接する他の層との境界面
のうち少なくともいずれかで、剥離を生ぜしめ、前記第
２の基材及び前記第３の基材を含む第１の積層体を分離
させる工程と、前記第１の積層体と第４の基材とを第２
の接着層を介して接着し、第２の積層体を得る工程と、
光照射を行うことにより前記第２の分離層の層内及び前
記第２の分離層と接する他の層との境界面のうち少なく
ともいずれかで、剥離を生ぜしめ、前記第２の分離層を
境界として、前記第２の積層体を分割する工程と、を含
む。係る積層体の製造方法により、最終的には前記第２
の積層体が分割されることにより生ずる前記第４の基材
を含む積層体が得られることになるが、例えば、前記第
４の基材が耐熱性に劣るものであったとしても、係る積
層体の製造方法を適用することは可能である。なお、こ
こで、第１〜第４の基材は、単層から成るものばかりで
なく、複数の層あるいは領域を含んでいても良い。第１
〜第４の基材に含まれるものとしては、例えば、ガラス
やプラスティックなどの基板を始め、MOS素子、薄膜ト
ランジスタ、薄膜ダイオード、シリコンのPIN接合から
成る光電変換素子（光センサ、太陽電池）、シリコン抵
抗素子、その他の薄膜半導体デバイス、電極（例えば、
ITO、メサ膜のような透明電極）、スイッチング素子、
メモリー、圧電素子等のアクチュエータ、マイクロミラ
ー（ピエゾ薄膜セラミックス）、磁気記録薄膜ヘッド、
コイル、インダクター、薄膜高透磁材料およびそれらを
組み合わせたマイクロ磁気デバイス、フィルター、反射
膜、及びダイクロイックミラーが挙げられる。また、係
る積層体の製造方法では光照射を行うことにより第１の
分離層及び第２の分離層での剥離を誘起しているが、こ
れらの分離層などを適宜選択することで、光照射の代わ
りに加熱によっても同様な効果が得られる場合がある。According to the present invention, there is provided a method for producing a first laminate, comprising: forming a second laminate on a first base material including a first separation layer;
Arranging the base material, bonding the second base material and the third base material including the second separation layer via the first adhesive layer, and performing light irradiation. Causes peeling in at least one of the inside of the first separation layer and a boundary surface with another layer in contact with the first separation layer, and the second base material and the third base are separated. Separating a first laminate including a material, and separating the first laminate and a fourth base material into a second laminate.
Adhering through an adhesive layer to obtain a second laminate;
By performing light irradiation, delamination is caused in at least one of the inside of the second separation layer and the boundary surface with another layer in contact with the second separation layer, and the second separation layer is removed. Dividing the second stacked body as a boundary. By the manufacturing method of the laminate, the second
A laminate including the fourth base material, which is generated by dividing the laminate, is obtained. For example, even when the fourth base material is inferior in heat resistance, such a laminate is obtained. It is possible to apply body manufacturing methods. Here, the first to fourth base materials may include not only a single layer but also a plurality of layers or regions. First
The fourth substrate includes, for example, a substrate such as glass or plastic, a MOS element, a thin film transistor, a thin film diode, a photoelectric conversion element (photosensor, solar cell) including a PIN junction of silicon, and silicon. Resistors, other thin-film semiconductor devices, electrodes (for example,
ITO, transparent electrode like mesa film), switching element,
Actuators such as memories and piezoelectric elements, micro mirrors (piezo thin film ceramics), magnetic recording thin film heads,
Examples include coils, inductors, thin-film high-permeability materials and micromagnetic devices combining them, filters, reflective films, and dichroic mirrors. In addition, in the method for manufacturing a laminated body, separation is induced in the first separation layer and the second separation layer by performing light irradiation. However, by appropriately selecting these separation layers and the like, light irradiation is performed. A similar effect may be obtained by heating instead of.
【０００５】本発明の第２の積層体の製造方法は、請求
項１に記載の積層体の製造方法において、前記第２の基
材は薄膜デバイスを含むこと、を特徴とする。係る積層
体の製造方法により、プラスティック基板やガラス基板
などの耐熱性に劣る部材を含む基材の上方に薄膜デバイ
スを設けることができる。[0005] A second method for manufacturing a laminate according to the present invention is characterized in that, in the method for manufacturing a laminate according to claim 1, the second base material includes a thin film device. According to such a method for manufacturing a laminate, a thin film device can be provided above a base material including a member having poor heat resistance such as a plastic substrate or a glass substrate.
【０００６】本発明の第３の積層体の製造方法は、第１
の基板上に第１の分離層を形成し、さらに前記第１の分
離層の上に薄膜デバイスを含む被転写体を形成する工程
と、第２の基板の上に第２の分離層を形成する工程と、
前記被転写体と前記第２の分離層とを第１の接着層を介
して接着する工程と、光照射により前記第１の分離層の
層内及び前記第１の分離層と接する他の層との境界面の
うち少なくともいずれかで剥離を生ぜしめ、前記被転写
体を前記第１の基板の側から前記第２の基板の側に転写
する工程と、前記第２基板の側に転写された前記被転写
体と第３の基板とを第２の接着層を介して接着する工程
と、光照射により前記第２の分離層の層内及び前記第２
の分離層と接する他の層との境界面のうち少なくともい
ずれかで剥離を生ぜしめ、前記被転写体を、前記第２の
基板の側から前記第３の基板の側に転写する工程と、を
含む。係る積層体の製造方法において前記第３の基板と
して所望の基板を用いることにより、製造される積層体
は所望の基板を含むものとなり、所望の性質や機能を付
与することができる。例えば、従来の半導体装置などの
積層体の製造方法では、高温処理を伴うため用いること
が困難なプラスティック材料を前記第３の基板として利
用することができ、これにより係る積層体に可撓性ある
いは柔軟性を付与することができる。また、前記第３の
基板として種々のデバイスを含むものを用いれば、係る
積層体には種々の機能を付与することができる。[0006] A third method of manufacturing a laminate according to the present invention comprises the steps of:
Forming a first separation layer on the first substrate, further forming a transfer object including a thin film device on the first separation layer, and forming a second separation layer on the second substrate The process of
Adhering the transfer-receiving body and the second separation layer via a first adhesive layer, and another layer in the first separation layer and in contact with the first separation layer by light irradiation Causing peeling at at least one of the boundary surfaces with the substrate, and transferring the object to be transferred from the side of the first substrate to the side of the second substrate; Bonding the transferred object and the third substrate via a second bonding layer, and irradiating the transfer medium with the second substrate in the layer of the second separation layer and the second substrate.
Causing peeling at least at one of the boundary surfaces with another layer in contact with the separation layer, and transferring the transferred object from the side of the second substrate to the side of the third substrate; including. By using a desired substrate as the third substrate in such a method of manufacturing a laminate, the manufactured laminate includes the desired substrate, and can have desired properties and functions. For example, in a conventional method for manufacturing a laminate such as a semiconductor device, a plastic material which is difficult to use because of accompanying high-temperature treatment can be used as the third substrate. Flexibility can be provided. Further, if a substrate including various devices is used as the third substrate, various functions can be imparted to the stacked body.
【０００７】係る積層体の製造方法では２回の転写を行
っているが、例えば、被転写体がMOS素子のような上下
が区別される構造物を含んでいる場合、当初の前記第1
の基板に対する該構造物の上下の位置関係と、前記第３
の基板に対する該構造物の上下の位置関係とを一致させ
ることができる。In the method of manufacturing a laminated body, the transfer is performed twice. For example, when the object to be transferred includes a structure such as a MOS element which can be distinguished vertically, the first transfer is performed.
A vertical positional relationship of the structure with respect to the substrate,
The upper and lower positional relationship of the structure with respect to the substrate can be matched.
【０００８】なお、被転写体は複数の層あるいは領域か
ら構成されていても良く、例えば、後述の中間層３０も
被転写体に含まれる場合もある。The transfer object may be composed of a plurality of layers or regions. For example, an intermediate layer 30 described later may be included in the transfer object.
【０００９】本発明の第４の積層体の製造方法は、請求
項３に記載の積層体の製造方法において、前記第１の接
着層を取り除く工程をさらに含むこと、を特徴とする。
請求項３に記載の積層体の製造方法において、最終的に
前記被転写体上に第１の接着層が残存することになる
が、この第１の接着層を除去することにより、前記被転
写体の上に他の基材を配置することができる。前記他の
基材は、例えば、電極や配線層である。According to a fourth aspect of the present invention, there is provided a method of manufacturing a laminate according to the third aspect, further comprising the step of removing the first adhesive layer.
4. The method for manufacturing a laminate according to claim 3, wherein the first adhesive layer is finally left on the object to be transferred. Other substrates can be placed on the body. The other substrate is, for example, an electrode or a wiring layer.
【００１０】本発明の第５の積層体の製造方法は、請求
項４に記載の積層体の製造方法において、前記第１の接
着層が溶剤に可溶であること、を特徴とする。係る積層
体の製造方法では、溶剤を塗布する方法あるいは溶剤に
浸漬する方法により、前記第１の接着層を除去すること
ができるため、研磨などの機械的除去法やプラズマエッ
チングによる除去法に比べて前記被転写体の損傷を低減
できる。[0010] In a fifth aspect of the present invention, in the method for manufacturing a laminate according to the fourth aspect, the first adhesive layer is soluble in a solvent. In the method for manufacturing such a laminate, the first adhesive layer can be removed by a method of applying a solvent or a method of dipping in a solvent, so that the first adhesive layer can be removed by mechanical removal such as polishing or removal by plasma etching. As a result, damage to the transfer object can be reduced.
【００１１】本発明の第６の積層体の製造方法は、請求
項５に記載の積層体の製造方法において、前記第１の接
着層が水溶性であること、を特徴とする。係る積層体の
製造方法では、前記第１の接着層の除去に水を用いるこ
とができるので、有機溶剤を用いる場合に比べてコスト
を低減することができる。According to a sixth aspect of the present invention, in the method for manufacturing a laminate according to the fifth aspect, the first adhesive layer is water-soluble. In such a method for manufacturing a laminate, water can be used for removing the first adhesive layer, so that the cost can be reduced as compared with the case where an organic solvent is used.
【００１２】本発明の第７の積層体の製造方法は、請求
項１乃至６のいずれかに記載の積層体の製造方法におい
て、前記第２の分離層がアモルファスシリコンにより構
成されていること、を特徴とする。アモルファスシリコ
ンに対する光照射により発熱現象、アブレーション、気
体の放出、あるいは状態変化が誘起され、前記第２の分
離層内または前記第２の分離層を接する他の層との境界
面のうち少なくともどちらかで、剥離を生ぜしめること
ができる。According to a seventh aspect of the present invention, in the method for manufacturing a laminate according to any one of the first to sixth aspects, the second separation layer is made of amorphous silicon. It is characterized by. The heat irradiation, ablation, gas release, or state change is induced by light irradiation on the amorphous silicon, and at least one of the inside of the second separation layer and the boundary surface with another layer in contact with the second separation layer. Thus, peeling can be caused.
【００１３】本発明の第８の積層体の製造方法は、請求
項１乃至７のいずれかに記載の積層体の製造方法におい
て、前記第１の分離層がアモルファスシリコンにより構
成されていること、を特徴とする。アモルファスシリコ
ンに対する光照射により発熱現象、アブレーション、気
体の放出、あるいは状態変化が誘起され、前記第１の分
離層内または前記第１の分離層を接する他の層との境界
面のうち少なくともどちらかで、剥離を生ぜしめること
ができる。According to an eighth aspect of the present invention, in the method for manufacturing a laminate according to any one of claims 1 to 7, the first separation layer is made of amorphous silicon. It is characterized by. Light irradiation on the amorphous silicon induces a heat generation phenomenon, ablation, gas release, or a state change, and at least one of a boundary surface within the first separation layer and another layer in contact with the first separation layer. Thus, peeling can be caused.
【００１４】本発明の第９の積層体の製造方法は、請求
項７または８に記載の積層体の製造方法において、前記
アモルファスシリコンが１at％以上の水素を含有するこ
と、を特徴とする。１at％以上の水素を含有するアモル
ファスシリコンに対する光照射により、水素ガスの放出
などの現象が誘起されて、前記第１の分離層または前記
第２の分離層における剥離が生じ易くなる。A ninth method for manufacturing a laminate according to the present invention is the method for manufacturing a laminate according to claim 7 or 8, wherein the amorphous silicon contains 1 at% or more of hydrogen. Irradiation of amorphous silicon containing 1 at% or more of hydrogen induces a phenomenon such as release of hydrogen gas, so that separation in the first separation layer or the second separation layer easily occurs.
【００１５】本発明の第１０の積層体の製造方法は、請
求項７乃至９のいずれかに記載の製造方法において、前
記アモルファスシリコンが１０〜２０at％の水素を含有
すること、を特徴とする。前記アモルファスシリコンに
は１０〜２０at％という高濃度で水素が含有されている
ので、光照射により容易に水素ガスが放出され、前記第
１の分離層または前記第２の分離層における剥離が生じ
易くなる。According to a tenth method of manufacturing a laminated body of the present invention, in the manufacturing method of any one of claims 7 to 9, the amorphous silicon contains 10 to 20 at% of hydrogen. . Since the amorphous silicon contains hydrogen at a high concentration of 10 to 20 at%, hydrogen gas is easily released by light irradiation, and separation in the first separation layer or the second separation layer easily occurs. Become.
【００１６】本発明の第１１の積層体の製造方法は、請
求項１乃至１０のいずれかに記載の積層体の製造方法に
おいて、１００ナノ秒以下のパルス幅を有する光を前記
光照射に用いること、を特徴とする。前記第１の分離層
または前記第２の分離層に対して、１００ナノ秒以下と
いう短いのパルス幅を有する光を照射することにより、
前記第１の分離層における剥離を瞬時に誘起することが
できる。 本発明の第１２の積層体の製造方法は、請求
項１乃至１１のいずれかに記載の積層体の製造方法にお
いて、レーザーを光源とする光を前記光照射に用いるこ
と、を特徴とする。レーザーを光源とする光は指向性に
優れているため、微少な面積でも選択的に光照射をする
ことができる。According to an eleventh method of manufacturing a laminate of the present invention, in the method of manufacturing a laminate according to any one of claims 1 to 10, light having a pulse width of 100 nanoseconds or less is used for the light irradiation. It is characterized by the following. By irradiating the first separation layer or the second separation layer with light having a short pulse width of 100 nanoseconds or less,
The separation in the first separation layer can be instantaneously induced. According to a twelfth method for manufacturing a laminate of the present invention, in the method for manufacturing a laminate according to any one of claims 1 to 11, light using a laser as a light source is used for the light irradiation. Since light using a laser as a light source has excellent directivity, light can be selectively irradiated even in a small area.
【００１７】本発明の第１３の積層体の製造方法は、請
求項１２に記載の積層体の製造方法において、エキシマ
ーレーザーを光源とする光を前記光照射に用いること、
を特徴とする。エキシマーレーザーは光源とする光は紫
外領域の波長を有しているため、前記第１の分離層また
は前記第２の分離層を効率良く光励起するのに適してい
る。According to a thirteenth method of manufacturing a laminate of the present invention, in the method of manufacturing a laminate according to claim 12, light using an excimer laser as a light source is used for the light irradiation.
It is characterized by. An excimer laser is suitable for efficiently light-exciting the first separation layer or the second separation layer because light used as a light source has a wavelength in an ultraviolet region.
【００１８】本発明の第１４の積層体の製造方法は、請
求項３乃至６のいずれかに記載の積層体の製造方法にお
いて、光硬化性材料を光硬化させることにより前記第１
の接着層を形成すること、を特徴とする。係る積層体の
製造方法は、光硬化性材料を光硬化させることにより前
記第１の接着層を形成するため、接着を短時間で完了さ
せることができる。According to a fourteenth method of manufacturing a laminate of the present invention, in the method of manufacturing a laminate of any one of claims 3 to 6, the photocurable material is light-cured.
Is formed. In the method of manufacturing such a laminate, the first adhesive layer is formed by photocuring the photocurable material, so that the adhesion can be completed in a short time.
【００１９】本発明の第１５の積層体の製造方法は、請
求項１４に記載の積層体の製造方法において、前記第２
の分離層がアモルファスシリコンから構成されており、
前記第２の分離層の膜厚が１０nm以下であること、を特
徴とする。前記第１の接着層を形成する際の光硬化に用
いる光は、前記第２の分離層を透過する必要があるが、
前記第２の分離層の膜厚を１０nm以下という十分薄い膜
厚とすることにより、前記光硬化に用いる光が前記第２
の分離層を透過することができる。A fifteenth manufacturing method of a laminate according to the present invention is the method of manufacturing a laminate according to claim 14, wherein
Is composed of amorphous silicon,
The thickness of the second separation layer is 10 nm or less. Light used for photo-curing when forming the first adhesive layer needs to pass through the second separation layer,
By setting the thickness of the second separation layer to a sufficiently small thickness of 10 nm or less, the light used for the photo-
Through the separation layer.
【００２０】本発明の第１６の積層体の製造方法は、請
求項１４に記載の積層体の製造方法において、前記光硬
化材料を光硬化させる際に用いる光の前記第２の分離層
に対する透過量が、前記第２の分離層の層内または前記
第２の分離層と接する他の層との境界面の少なくともい
ずれかにおいて剥離を生ぜしめる際に用いる光の前記第
２の分離層に対する透過量より大であること、を特徴と
する。係る積層体の製造方法により前記第２の分離層を
透過した光により光硬化させることができる。According to a sixteenth aspect of the present invention, in the method of manufacturing a laminate according to claim 14, transmission of light used for photocuring the photocurable material to the second separation layer is performed. Transmission of light to the second separation layer for use in causing an amount to cause delamination in the second separation layer and / or at an interface with another layer in contact with the second separation layer; Greater than the quantity. According to such a method for manufacturing a laminate, light curing can be performed by light transmitted through the second separation layer.
【００２１】本発明の半導体装置の製造方法は、請求項
１乃至１６のいずれかに記載の積層体の製造方法を用い
ること、を特徴とする。上述のように請求項１乃至１６
に記載の積層体の製造方法は、様々な部材や基板を含む
積層体に対しても適用できるので、本発明の半導体装置
の製造方法は、様々な部材や基板を含む半導体装置の製
造に有効である。この特徴を生かすことにより、半導体
装置の組み込まれた、例えば、液晶表示装置、電気泳動
表示装置、電界発光表示装置、ICカード及びメモリカー
ドを製造することもできる。A method of manufacturing a semiconductor device according to the present invention is characterized by using the method of manufacturing a laminate according to any one of claims 1 to 16. Claims 1 to 16 as described above
Can be applied to a laminate including various members and substrates. Therefore, the method for manufacturing a semiconductor device of the present invention is effective for manufacturing a semiconductor device including various members and substrates. It is. By making use of this feature, for example, a liquid crystal display device, an electrophoretic display device, an electroluminescent display device, an IC card, and a memory card in which a semiconductor device is incorporated can be manufactured.
【００２２】本発明の半導体装置は、請求項１７に記載
の半導体装置の製造方法により製造されること、を特徴
とする。上述のように、請求項１７に記載の半導体装置
の製造方法は、製造方法としての自由度が高いので、例
えば、ガラス基板やプラスティック基板などの上にも半
導体装置を設けることができる。A semiconductor device according to the present invention is manufactured by the method for manufacturing a semiconductor device according to claim 17. As described above, the method for manufacturing a semiconductor device according to the seventeenth aspect has a high degree of freedom as a manufacturing method. Therefore, for example, the semiconductor device can be provided on a glass substrate, a plastic substrate, or the like.
【００２３】本発明の半導体装置は、請求項１８に記載
の半導体装置において、前記半導体装置が薄膜トランジ
スタを含むこと、を特徴とする。係る半導体装置は、液
晶表示装置、電気泳動表示装置、電界発光装置などの種
々のフラットパネルディスプレイや、例えば、ICカー
ド、メモリカード及び電子ペーパーの駆動用半導体装置
として好適である。A semiconductor device according to the present invention is characterized in that, in the semiconductor device according to claim 18, the semiconductor device includes a thin film transistor. Such a semiconductor device is suitable as various flat panel displays such as a liquid crystal display device, an electrophoretic display device, and an electroluminescent device, and a semiconductor device for driving, for example, an IC card, a memory card, and electronic paper.
【００２４】[0024]
【発明の実施の形態】本発明の好ましい実施の形態につ
いて説明する。まず、実施の形態の概略を図１〜図１０
に沿って説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described. First, an outline of an embodiment is shown in FIGS.
It is explained along.
【００２５】第１工程として、第１の基板１０の上に第
１の分離層２０を形成し（図１）、さらに第１の分離層
２０の上に中間層３０及び被転写層４０を形成する（図
２）。第２工程として、第２の基板５０の上に、第２の
分離層６０を形成する（図３）。第３工程として、第２
の分離層６０と前記被転写層４０とを第１の接着層７０
を介して接着する（図４）。第４工程として第１の基板
１０を通して第１の分離層２０に対して照射光２００を
用いて（図５）、第１の分離層２０に剥離を生ぜしめ、
被転写層４０を第１の基板１０の側から第２の基板５０
の側に転写する（図６）。第５工程として、中間層３０
と第３の基板８０とを接着層９０を介して接着する（図
７）。第６工程として、第２の基板５０を通して第２の
分離層６０に対して光２１０を用いて光照射を行い（図
８）、第２の分離層６０に剥離を生ぜしめ、被転写層４
０を第２基板５０の側から第３の基板８０の側に移動さ
せる（図９）。なお、図１０に示したように、以上の工
程が終了後、前記被転写層４０の表面上に残存する第１
の接着層７０を除去しても良い。As a first step, a first separation layer 20 is formed on the first substrate 10 (FIG. 1), and an intermediate layer 30 and a transfer layer 40 are formed on the first separation layer 20. (FIG. 2). As a second step, a second separation layer 60 is formed on the second substrate 50 (FIG. 3). As the third step, the second
Of the separation layer 60 and the transfer receiving layer 40 to the first adhesive layer 70
(FIG. 4). As a fourth step, the first separation layer 20 is irradiated with the irradiation light 200 through the first substrate 10 (FIG. 5) to cause separation of the first separation layer 20,
The transfer target layer 40 is placed on the second substrate 50 from the first substrate 10 side.
(FIG. 6). As a fifth step, the intermediate layer 30
And the third substrate 80 are bonded via an adhesive layer 90 (FIG. 7). As a sixth step, the second separation layer 60 is irradiated with light using the light 210 through the second substrate 50 (FIG. 8) to cause peeling of the second separation layer 60, and the transfer layer 4
0 is moved from the second substrate 50 side to the third substrate 80 side (FIG. 9). As shown in FIG. 10, after the above steps are completed, the first layer remaining on the surface of the transfer target layer 40 is removed.
May be removed.
【００２６】次に具体的な実験条件について詳述する。Next, specific experimental conditions will be described in detail.
【００２７】[第１の基板１０]第４工程において、第１
の基板１０の側から第１の分離層２０に対して光２００
を照射するので、第１の基板１０は光２００を十分に透
過するものであることが望ましい。具体的には、第１の
基板１０は光２００を１０％以上透過するものが好まし
く、５０％以上透過するものがより好ましい。後述する
第１の分離層２０がアモルファスシリコンから構成され
ている場合は、エキシマーレーザーなどを光源とする紫
外光を光２００として用いることができるが、そのよう
な場合は、第１の基板１０を構成する材料として、紫外
光を十分に透過する材料、例えば、ガラスあるいは石英
ガラスを用いることが好ましい。第１の基板１０の厚さ
は特に限定されないが、基板の機械的強度と光の透過量
との兼ね合いから、０．１〜５．０ ｍｍ程度であるこ
とが好ましく、０．５〜１．５ ｍｍであることがより
好ましい場合がある。なお、第１の基板１０の光の透過
率が十分高い場合には、その厚さは、前記上限値を超え
るものであっても良い。また、光を均一に第１の分離層
２０に照射するためには、第１の基板１０の厚さは、均
一であることが好ましい。第１の基板１０の上に形成さ
れる第１の分離層２０、中間層３０、及び被転写層４０
のうちいずれかを形成する際に、高温処理を必要とする
場合は、第１の基板１０が十分な耐熱性を有することが
好ましい。[First substrate 10] In the fourth step, the first substrate
Light 200 from the side of the substrate 10 to the first separation layer 20.
Therefore, the first substrate 10 desirably transmits the light 200 sufficiently. Specifically, the first substrate 10 preferably transmits 10% or more of the light 200, and more preferably transmits 50% or more. When the first separation layer 20 described later is made of amorphous silicon, ultraviolet light using an excimer laser or the like as a light source can be used as the light 200. In such a case, the first substrate 10 As a constituent material, a material that sufficiently transmits ultraviolet light, for example, glass or quartz glass is preferably used. The thickness of the first substrate 10 is not particularly limited, but is preferably about 0.1 to 5.0 mm, and preferably 0.5 to 1.0 mm in consideration of the balance between the mechanical strength of the substrate and the amount of light transmitted. It may be more preferable that it is 5 mm. If the light transmittance of the first substrate 10 is sufficiently high, the thickness may exceed the upper limit. In addition, in order to uniformly irradiate the first separation layer 20 with light, the thickness of the first substrate 10 is preferably uniform. First separation layer 20, intermediate layer 30, and transferred layer 40 formed on first substrate 10
If high temperature treatment is required when forming any of the above, it is preferable that the first substrate 10 has sufficient heat resistance.
【００２８】[第１の分離層２０]第1の分離層２０に用
いる材料としては、例えば、以下のA〜Fに記載された材
料を用いることができる。[First Separation Layer 20] As a material used for the first separation layer 20, for example, the following materials A to F can be used.
【００２９】A．アモルフアスシリコン（a−Si） このアモルフアスシリコン中には、水素が含有されてい
て良い。この場合、水素の含有量は、１at％以上程度で
あるのが好ましく、2〜20 at％程度であるのがより好ま
しい。このように、水素が所定量含有されていると、光
の照射によって水素が放出され、第1の分離層20に内圧
が発生し、それが剥離を促す力となる。アモルフアスシ
リコン中の水素の含有量は、成膜条件、例えばCVDにお
けるガス圧、ガス雰囲気、ガス流量、温度、基板温度、
あるいはプラズマ生成の際の投入パワー等の条件を適宜
設定することにより調整することができる。A. Amorphous silicon (a-Si) This amorphous silicon may contain hydrogen. In this case, the content of hydrogen is preferably about 1 at% or more, more preferably about 2 to 20 at%. As described above, when a predetermined amount of hydrogen is contained, hydrogen is released by light irradiation, and an internal pressure is generated in the first separation layer 20, which serves as a force for promoting separation. The content of hydrogen in amorphous silicon depends on film forming conditions, for example, gas pressure in CVD, gas atmosphere, gas flow rate, temperature, substrate temperature,
Alternatively, it can be adjusted by appropriately setting conditions such as input power during plasma generation.
【００３０】B・酸化ケイ素又はケイ酸化合物、酸化チ
タンまたはチタン酸化合物、酸化ランタンまたははラン
タン酸化合物等の各種酸化物セラミックス、誘電体、強
誘電体あるいは半導体 酸化ケイ素としては、SiO、SiO2、Si302が挙げられ、ケ
イ酸化合物としては、例えばK2SiO3、Li2SiO3、CaSi
O3、ZrSiO4、Na2SiO3が挙げられる。酸化チタンとして
は、TiO、Ti203、TiO2が挙げられ、チタン酸化合物とし
ては、例えば、BaTiO4、BaTiO3、Ba2Ti9020、BaTi
5011、CaTiO3、SrTiO3、PbTiO3、MgTiO3、ZrTiO2、SnTi
O4、A12TiO5、FeTiO3が挙げられる。酸化ジルコニウム
としては、ZrO2が挙げられ、ジルコン酸化合物として
は、例えばBaZrO3、ZrSiO4、PbZrO3、MgZrO3、K2ZrO3が
挙げられる。B. Various oxide ceramics such as silicon oxide or silicic acid compound, titanium oxide or titanic acid compound, lanthanum oxide or lanthanic acid compound, dielectric, ferroelectric or semiconductor Silicon oxide includes SiO, SiO 2 , Si 3 0 2. Examples of the silicic acid compound, for example K 2 SiO 3, Li 2 SiO 3, CaSi
O 3 , ZrSiO 4 and Na 2 SiO 3 are mentioned. Titanium oxide, TiO, Ti 2 0 3, TiO 2 , and examples of titanate compounds, for example, BaTiO 4, BaTiO 3, Ba 2 Ti 9 0 20, BaTi
5 0 11, CaTiO 3, SrTiO3 , PbTiO 3, MgTiO 3, ZrTiO 2, SnTi
O 4 , A 12 TiO 5 , and FeTiO 3 are mentioned. Examples of zirconium oxide include ZrO 2 , and examples of zirconate compounds include BaZrO 3 , ZrSiO 4 , PbZrO 3 , MgZrO 3 , and K 2 ZrO 3 .
【００３１】C・PZT [Pb（Zr,Ti）O3]]、PLZT[(Pb,La)
（Zr,Ti）O3]]、PLLZT、PBT等のセラミックスあるいは
誘電体（強誘電体） D．窒化珪素、窒化アルミニウム、窒化チタン等の窒化
物セラミックス E．有機高分子材料 有機高分子材料としては、高分子の主鎖上に、一CH−、
−CO−（ケトン）、−CONH−（アミド）、−NH一（アミ
ノ）、−COO−（エステル）、−N＝N−（アゾ）、−CH
＝N−（イミド）を有するものが挙げられる。また、光
吸収量を向上させるためにベンゼンやナフタレンなどの
芳香族炭化水素が組み込まれた有機高分子も利用するこ
とができる。C · PZT [Pb (Zr, Ti) O 3 ]], PLZT [(Pb, La)
D. Ceramics or dielectrics (ferroelectrics) such as (Zr, Ti) O 3 ]], PLLZT, PBT, etc. Nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride, etc. Organic polymer material As an organic polymer material, one CH-,
-CO- (ketone), -CONH- (amide), -NH- (amino), -COO- (ester), -N = N- (azo), -CH
= N- (imide). Further, an organic polymer in which an aromatic hydrocarbon such as benzene or naphthalene is incorporated to improve the amount of light absorption can also be used.
【００３２】このような有機高分子材料の具体例として
は、例えば、ポリエチレン、ポリプロピレンのようなポ
リオレフイン、ポリイミド、ポリアミド、ポリエステ
ル、ポリメチルメタクリレート（PMMA）、ポリフェニレ
ンサルフアイド（PPS）、ポリエーテルサルフォン（PE
S）、ポリエステルテレフタレート（PET）、エポキシ樹
脂がある。Specific examples of such an organic polymer material include, for example, polyolefin such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), and polyether sulfone. (PE
S), polyester terephthalate (PET) and epoxy resin.
【００３３】F.金属 金属としては、例えば、Al、Li、Ti、Mn、In、Sn、Y、L
a、Ce、Nd、Pr、Gd、Smまたはこれらのうち少なくとも1
種を含む合金が挙げられる。F. Metal As the metal, for example, Al, Li, Ti, Mn, In, Sn, Y, L
a, Ce, Nd, Pr, Gd, Sm or at least one of these
Alloys containing seeds.
【００３４】第1分離層２０の厚さは、第1の分離層の組
成や材質、積層構造、形成方法等の諸条件により異なる
が、通常は、１ｎｍ〜２０μｍ程度であることが好まし
く、１０ｎｍ〜２μｍ程度であるのがより好ましく、４
０ｎｍ〜１μｍ程度であることがさらに好ましい。The thickness of the first separation layer 20 varies depending on various conditions such as the composition and material of the first separation layer, the laminated structure, the forming method and the like, but is usually preferably about 1 nm to 20 μm, preferably 10 nm. And more preferably about 2 μm.
More preferably, it is about 0 nm to 1 μm.
【００３５】第１分離層２０の形成方法は、膜組成や膜
厚等の諸条件に応じて適宜選択することができる。例え
ば、ＣＶＤ（ＭＯＣＶＤ、減圧ＣＶＤ、ＥＣＲ−ＣＶ
Ｄ、プラズマＣＶＤを含む）、蒸着、分子線蒸着（Ｍ
Ｂ）、スパッタリング、イオンプレーティング、ＰＶＤ
等の各種気相成長法、電気メッキ、浸漬メッキ、ディッ
ピング、無電解メッキ等の各種メッキ法、ラングミュア
・ブロジェット（ＬＢ）法、スピンコート、スプレーコ
ート、ロールコート等の塗布法、各種印刷法、転写法、
インクジェット法、粉末ジェット法、及び、上記の方法
うちから選択された２つ以上の方法を組み合わせて形成
することもできる。The method of forming the first separation layer 20 can be appropriately selected according to various conditions such as a film composition and a film thickness. For example, CVD (MOCVD, low pressure CVD, ECR-CV
D, including plasma CVD), evaporation, molecular beam evaporation (M
B), sputtering, ion plating, PVD
And various plating methods such as electroplating, immersion plating, dipping, and electroless plating, Langmuir-Blodgett (LB) method, spin coating, spray coating, roll coating and other coating methods, and various printing methods , Transcription method,
An ink jet method, a powder jet method, and a combination of two or more methods selected from the above methods can also be used.
【００３６】例えば、第１分離層２０の組成がアモルフ
アスシリコン（a−Si）の場合には、ＣＶＤ法、特に減
圧ＣＶＤ法やプラズマＣＶＤ法により成膜するのが好ま
しい。また、第１の分離層２０をゾルーゲル法によるセ
ラミックスで構成する場合や、有機高分子材料で構成す
る場合には、塗布法、特にスピンコート法により成膜す
ることが好ましい。For example, when the composition of the first separation layer 20 is amorphous silicon (a-Si), it is preferable to form the film by a CVD method, particularly a low pressure CVD method or a plasma CVD method. When the first separation layer 20 is made of a ceramic by a sol-gel method or when it is made of an organic polymer material, it is preferable to form the film by a coating method, particularly a spin coating method.
【００３７】図6に示すように、第１の分離層２０に対
する光照射を行った後、第1分離層２０の一部または全
部が中間層３０に付着することがある。この場合、例え
ば、洗浄、エッチング、アッシング、研磨等の方法また
はこれらを組み合わせた処理を施すことにより中間層３
０上の付着物を除去することができる。As shown in FIG. 6, after irradiating the first separation layer 20 with light, part or all of the first separation layer 20 may adhere to the intermediate layer 30 in some cases. In this case, for example, a method such as cleaning, etching, ashing, polishing, or a combination thereof is applied to form the intermediate layer 3.
Deposits on the zero can be removed.
【００３８】また、第1分離層２０の一部または全部が
第１の基板１０に付着する場合もある。この場合も同様
な処理を行うことにより、第１基板１０から付着物を除
去することができるが、これにより、第１の基板１０と
して、石英ガラスのような高価な材料、希少な材料が用
いられている場合は、第１の基板１０を再利用すること
ができ、コスト面でも有利である。In some cases, part or all of the first separation layer 20 may adhere to the first substrate 10. In this case as well, by performing the same treatment, it is possible to remove deposits from the first substrate 10. However, as a result, an expensive material such as quartz glass or a rare material is used as the first substrate 10. In this case, the first substrate 10 can be reused, which is advantageous in cost.
【００３９】[中間層３０]第１の分離層２０に接して配
置される中間層３０は、種々の目的で形成され、例え
ば、被転写層４０を物理的または化学的に保護する保護
層、絶縁層、導電層、レーザー光の遮光層、不純物のマ
イグレーションを防止するバリヤ層、反射層としての機
能するものが挙げられる。中間層３０が絶縁膜である場
合、例えば、SiO2、SiO、及びSiNを使用することができ
る。中間層３０の厚さは、所望の機能に応じて適宜選択
することができるが、通常は、１０ｎｍ〜５μｍである
のが好ましく、４０ｎｍ〜１μｍ程度であるのがより好
ましい。なお、場合によっては、中間層３０を形成せ
ず、第１の分離層２０の上に直接、被転写層４０を形成
しても良い。[Intermediate Layer 30] The intermediate layer 30 disposed in contact with the first separation layer 20 is formed for various purposes, for example, a protective layer that physically or chemically protects the transferred layer 40, Examples include an insulating layer, a conductive layer, a laser light shielding layer, a barrier layer for preventing migration of impurities, and a layer functioning as a reflective layer. When the intermediate layer 30 is an insulating film, for example, SiO 2 , SiO, and SiN can be used. The thickness of the intermediate layer 30 can be appropriately selected according to a desired function, but is usually preferably from 10 nm to 5 μm, and more preferably from about 40 nm to 1 μm. In some cases, the transfer layer 40 may be formed directly on the first separation layer 20 without forming the intermediate layer 30.
【００４０】[被転写層４０]被転写層４０は、図２に示
されているように、例えば、薄膜トランジスタ（TFT）
を含んでいても良い（被転写層４０のK部分）。このTFT
は、例えば、ポリシリコン層にn型不純物を導入して形
成されたソース領域１０２、ドレイン領域１０４、チャ
ネル領域１００、ゲート絶縁膜１０６、ゲート電極１０
８、層間絶縁膜１１０、ソース電極１１２、及びドレイ
ン電極１１４を具備することができる。TFT以外の、被
転写層４０に含まれるデバイスとしては、例えば、薄膜
ダイオード、シリコンのPIN接合から成る光電変換素子
（光センサ、太陽電池）、シリコン抵抗素子、その他の
薄膜半導体デバイス、電極（例えば、ITO、メサ膜のよ
うな透明電極）、スイッチング素子、メモリー、圧電素
子等のアクチュエータ、マイクロミラー（ピエゾ薄膜セ
ラミックス）、磁気記録薄膜ヘッド、コイル、インダク
ター、薄膜高透磁材料およびそれらを組み合わせたマイ
クロ磁気デバイス、フィルター、反射膜、及びダイクロ
イックミラーが挙げられる。もちろん、被転写層４０は
上記の例以外の種々のデバイスを含んでいても、本発明
の積層体の製造方法の適用は可能である。[Transferred Layer 40] As shown in FIG. 2, the transferred layer 40 is, for example, a thin film transistor (TFT).
(K portion of the transferred layer 40). This TFT
Are, for example, a source region 102, a drain region 104, a channel region 100, a gate insulating film 106, and a gate electrode 10 formed by introducing an n-type impurity into a polysilicon layer.
8, an interlayer insulating film 110, a source electrode 112, and a drain electrode 114. Devices other than the TFT included in the transfer layer 40 include, for example, a thin-film diode, a photoelectric conversion element (photosensor, solar cell) composed of a silicon PIN junction, a silicon resistance element, other thin-film semiconductor devices, and electrodes (for example, , ITO, transparent electrodes such as mesa film), switching elements, memories, actuators such as piezoelectric elements, micromirrors (piezoelectric thin film ceramics), magnetic recording thin film heads, coils, inductors, thin magnetically permeable materials and their combinations Examples include micro magnetic devices, filters, reflective films, and dichroic mirrors. Of course, even if the transferred layer 40 includes various devices other than the above-described examples, the method for manufacturing a laminate of the present invention can be applied.
【００４１】[第２の基板５０]本実施形態では、第２の
基板５０は、被転写層４０を一時的に固定するに足る強
度、あるいは後で詳述する第２の分離層６０を形成する
に足る耐熱性を備えていれば良い。光硬化材料を光硬化
させて、後で詳述する第１接着層７０を形成する場合
は、基板５０は、光硬化材料を硬化させる光を十分に透
過することが好ましい。従って、第２の基板５０として
は、例えば、ガラス材料や、樹脂材料等の安価な材料を
用いることができる。[Second Substrate 50] In this embodiment, the second substrate 50 has sufficient strength to temporarily fix the layer 40 to be transferred, or forms a second separation layer 60 which will be described in detail later. What is necessary is just to have sufficient heat resistance. When the photocurable material is photocured to form the first adhesive layer 70, which will be described in detail later, it is preferable that the substrate 50 sufficiently transmit light for curing the photocurable material. Therefore, as the second substrate 50, for example, an inexpensive material such as a glass material or a resin material can be used.
【００４２】ガラス材としては、例えば、ケイ酸ガラス
（石英ガラス）、ケイ酸アルカリガラス、ソーダ石灰ガ
ラス、カリ石灰ガラス、鉛（アルカリ）ガラス、バリウ
ムガラス、ホウケイ酸ガラスが挙げられる。このうち、
ケイ酸ガラス以外のものは、ケイ酸ガラスに比べて、成
型や加工も比較的容易であり、なおかつ安価であるた
め、好ましい。Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potassium lime glass, lead (alkali) glass, barium glass, and borosilicate glass. this house,
Materials other than silicate glass are preferable because they are relatively easy to mold and process and are less expensive than silicate glass.
【００４３】樹脂材料としては、熱可塑性樹脂、熱硬化
性樹脂のいずれでもよく、例えば、ポリエチレン、ポリ
プロピレン、エチレンープロピレン共重合体、エチレン
ー酢酸ビニル共重合体（EVA）等のポリオレフイン、環
状ポリオレフイン、変性ポリオレフイン、ポリ塩化ビニ
ル、ポリ塩化ビニリデン、ポリスチレン、ポリアミド、
ポリイミド、ポリアミドイミド、ポリカーボネート、ポ
リー（4−メチルペンテンー1）、アイオノマー、アクリ
ル系樹脂、ポリメチルメタクリレート、アクリルースチ
レン共重合体（AS樹脂）、ブタジエンースチレン共重合
体、ポリオ共重合体（EVOH）、ポリエチレンテレフタレ
ート（PET）、ポリブチレンテレフタレート（PBT）、ポ
リシクロへキサンテレフタレート（PCT）等のポリエス
テル、ポリエーテル、ポリエーテルケトン（PEEK）、ポ
リエーテルイミド、ポリアセタール、ポリフェニレンオ
キシド、変性ポリフェニレンオキシド、ポリアリレー
ト、芳香族ポリエステル（液晶ポリマー）、ポリテトラ
フルオロエチレン、ポリフッ化ビニリデン、その他フッ
素系樹脂、スチレン系、ポリオレフイン系、ポリ塩化ビ
ニル系、ポリウレタン系、フッ素ゴム系、塩素化ポリエ
チレン系等の各種熱可塑性エラストマー、エポキシ樹
脂、フェノール樹脂、ユリア樹脂、メラミン樹脂、不蝕
和ポリエステル、シリコーン樹脂、ポリウレタン等、ま
たはこれらを主とする共重合体、ブレンド体、ポリマー
アロイ等が挙げられ、これらのうちの1種または2種以上
を組み合わせて（例えば2層以上の積層体として）用い
ることができる。The resin material may be either a thermoplastic resin or a thermosetting resin. Examples of the resin material include polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, and the like. Modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide,
Polyimide, polyamide imide, polycarbonate, poly (4-methylpentene-1), ionomer, acrylic resin, polymethyl methacrylate, acryl-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer ( EVOH), polyester such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polycyclohexane terephthalate (PCT), polyether, polyether ketone (PEEK), polyetherimide, polyacetal, polyphenylene oxide, modified polyphenylene oxide, Polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin, polyvinyl chloride, polyurethane, polyurethane Various thermoplastic elastomers such as raw rubber and chlorinated polyethylene, epoxy resin, phenol resin, urea resin, melamine resin, noncorrosive polyester, silicone resin, polyurethane, etc., or copolymers and blends mainly containing these And a polymer alloy, and one or more of these can be used (for example, as a laminate of two or more layers).
【００４４】[第２の分離層６０]第２分離層６０として
は、基本的に、前述の第1の分離層２０の説明で述べたA
〜Fの材料と同様の材料を用いることができる。ただ
し、後で詳述する第1の接着層７０が光硬化性樹脂材料
の光硬化により形成する場合は、第２の分離層６０は、
第1の接着層７０の形成に用いる光を十分に透過するこ
とが好ましい。このような条件を満たす材料としては、
例えば、プラズマCVD法で形成された水素化アモルフア
スシリコン（a−Si：H）が挙げられる。a−Si：H、プラ
ズマCVD法により100℃以下という比較的低温での成膜が
可能であるため、前述の第２の基板５０を構成する材料
の選択肢を広げることができる。[Second Separation Layer 60] As the second separation layer 60, basically, the A described in the above description of the first separation layer 20 is used.
To F can be used. However, when the first adhesive layer 70 described later is formed by photocuring of a photocurable resin material, the second separation layer 60
It is preferable that the light used for forming the first adhesive layer 70 be sufficiently transmitted. Materials satisfying such conditions include:
For example, hydrogenated amorphous silicon (a-Si: H) formed by a plasma CVD method can be given. Since a film can be formed at a relatively low temperature of 100 ° C. or less by the a-Si: H, plasma CVD method, the choice of the material forming the second substrate 50 can be expanded.
【００４５】また、図１１に示すように、アモルフアス
シリコンは約320nm以下の波長域の光に対して強い吸収
を示すが、320nm以上の光に対しては透光性を示す。従
って、光硬化性材料を硬化させて第1の接着層７０を形
成する光として320nm以上の波長を有する光、例えば、
水銀ランプの346nmの波長の光、及び、第２の分離層６
０における剥離に使用する光として320nm以下の波長を
有する光、例えば、XeClエキシマレーザー（308nm）を
光源とする光を、それぞれ使用すれば、第２の分離層６
０における剥離を抑制したまま、第１の接着層７０を形
成すること、及び第２分離層における剥離を誘起するこ
とができる。さらに、第２分離層の膜厚を10nm以下とす
れば、さらに効果的である。プラズマCVD法によりアモ
ルファスシリコン（a−Si：H）を第２分離層として形成
した場合、通常、アモルファスシリコンは10〜20at％の
水素を含むが、このアモルファスシリコンに対して光照
射を行うことにより、アブレーションあるいは水素ガス
放出現象が生起し、第２基板５０と第1接着層７０の間
の接着力が失われ、第２基板５０を容易に脱離すること
ができる。As shown in FIG. 11, amorphous silicon has a strong absorption for light in a wavelength range of about 320 nm or less, but has a light transmitting property for light of 320 nm or more. Therefore, light having a wavelength of 320 nm or more as light for curing the photocurable material to form the first adhesive layer 70, for example,
Light of a wavelength of 346 nm of a mercury lamp and a second separation layer 6
When light having a wavelength of 320 nm or less, for example, light using a XeCl excimer laser (308 nm) as a light source is used as the light used for the separation at 0, the second separation layer 6
The formation of the first adhesive layer 70 and the separation in the second separation layer can be induced while the separation at 0 is suppressed. Further, it is more effective if the thickness of the second separation layer is 10 nm or less. When amorphous silicon (a-Si: H) is formed as the second separation layer by the plasma CVD method, the amorphous silicon usually contains 10 to 20 at% of hydrogen. By irradiating the amorphous silicon with light, Then, ablation or a hydrogen gas releasing phenomenon occurs, the adhesive force between the second substrate 50 and the first adhesive layer 70 is lost, and the second substrate 50 can be easily detached.
【００４６】[第１の接着層７０]第1接着層７０として
用いられる材料としては、例えば、反応硬化型接着剤、
熱硬化型接着剤、紫外線硬化型接着剤等の光硬化型接着
剤、嫌気硬化型接着剤等の各種硬化型接着剤を用いるこ
とができる。特に、工程のタクトタイム低減の観点から
は光硬化性接着剤を用いることが好ましい。上記の光硬
化性材料としては、例えば、エポキシ系、アクリレート
系、シリコーン系の光硬化性材料を用いることができ
る。第１の接着層７０を最終的の除去する必要がある場
合は、第１の接着層７０は溶媒に可溶であることが好ま
しく、特に水溶性であることが好ましい。以上のような
条件を満たす材料として、例えば、スリーボンド３０４
６（商品名）を用いることができる。また、第1の接着
層７０の厚さを、1μm〜1mm程度、さらに好ましくは10
〜100μm程度とすることにより、図８に示したように、
照射光２１０を第2分離層６０に照射された際に発生す
る熱または圧力から被転写層４０を保護する機能を、第
1の接着層７０に付与することができる。[First Adhesive Layer 70] The material used for the first adhesive layer 70 is, for example, a reactive curing adhesive,
Various curable adhesives such as a photocurable adhesive such as a thermosetting adhesive and an ultraviolet curable adhesive, and an anaerobic curable adhesive can be used. In particular, it is preferable to use a photocurable adhesive from the viewpoint of reducing the tact time in the process. As the photocurable material, for example, an epoxy-based, acrylate-based, or silicone-based photocurable material can be used. When it is necessary to finally remove the first adhesive layer 70, the first adhesive layer 70 is preferably soluble in a solvent, particularly preferably water-soluble. As a material satisfying the above conditions, for example, Three Bond 304
6 (trade name) can be used. Further, the thickness of the first adhesive layer 70 is about 1 μm to 1 mm, more preferably 10 μm to 1 mm.
By setting the thickness to about 100 μm, as shown in FIG.
The function of protecting the transferred layer 40 from heat or pressure generated when the irradiation light 210 is irradiated on the second separation layer 60 is described below.
One of the adhesive layers 70 can be provided.
【００４７】[照射光２００]第１の分離層２０における
剥離を誘起する照射光200としては、第１の分離層２０
の性質に応じて、Ｘ線、紫外線、可視光、赤外線（熱
線）、ミリ波、マイクロ波、電子線、放射線（α波、β
波、γ波）など、種々の波長の光あるいは電磁波を用い
ることができる。照射面積あるいは照射領域を制御する
必要がある場合は、指向性に優れた、これらの波長の光
あるいは電磁波を発振するレーザーを用いることが好ま
しい。レーザーとしては、例えば、各種気体レーザー、
ガラスレーザー、半導体レーザーが挙げられるが、より
具体的には、例えば、エキシマレーザー、Nd−YAGレー
ザー、Arレーザー、Krレーザー、CO2レーザー、COレー
ザー、及びHe−Neレーザーが挙げられる。[Irradiation light 200] The irradiation light 200 that induces separation in the first separation layer 20 includes the first separation layer 20
X-ray, ultraviolet, visible light, infrared (heat ray), millimeter wave, microwave, electron beam, radiation (α wave, β
(Waves, γ-waves), or light of various wavelengths or electromagnetic waves. When it is necessary to control the irradiation area or the irradiation area, it is preferable to use a laser which has excellent directivity and oscillates light or electromagnetic waves of these wavelengths. As lasers, for example, various gas lasers,
Examples include a glass laser and a semiconductor laser, and more specifically, an excimer laser, an Nd-YAG laser, an Ar laser, a Kr laser, a CO 2 laser, a CO laser, and a He-Ne laser.
【００４８】エキシマレーザーを光源とする高出力の紫
外光を第１の分離層２０に対する照射に用いた場合、極
めて短時間で第1の分離層２０における剥離現象を誘起
することができるので、被転写層４０などの隣接する層
の温度上昇、劣化あるいは損傷などの第１の分離層２０
に対する光照射により誘起される副次的な効果を低減す
ることができる。なお、照射光のエネルギー密度は、10
〜5000mJ／cm2程度とするのが好ましく、100〜500mJ／c
m2程度とするのがより好ましい。また、照射時間は、1
〜1000ナノ秒程度とするのが好ましく、10〜100ナノ秒
程度とするのがより好ましい。When high-power ultraviolet light using an excimer laser as a light source is used to irradiate the first separation layer 20, a peeling phenomenon in the first separation layer 20 can be induced in a very short time. First separation layer 20 such as temperature rise, deterioration or damage of an adjacent layer such as transfer layer 40
, A secondary effect induced by light irradiation on the substrate can be reduced. The energy density of the irradiation light is 10
50005000 mJ / cm 2, preferably 100-500 mJ / c
and more preferably, m 2 approximately. The irradiation time is 1
It is preferably set to about 1000 nanoseconds, and more preferably about 10 to 100 nanoseconds.
【００４９】照射光２００は、第1の分離層２０に対し
て垂直な方向から照射する必要は必ずしもなく、第1の
分離層２０に対して所定の角度をなす方向から行うこと
もできる。また、第1の分離層２０の面積が照射光200の
1回の照射面積より大きい場合には、第1の分離層２０の
全領域に対し、複数回に分けて照射光２００を照射する
こともできる。また、同一箇所に2回以上照射しても良
い。また、異なる種類、異なる波長域の照射光を同一領
域または異なる領域に2回以上照射しても良い。It is not necessary to irradiate the irradiation light 200 from a direction perpendicular to the first separation layer 20, and the irradiation light 200 may be applied from a direction forming a predetermined angle with respect to the first separation layer 20. Further, the area of the first separation layer 20 is
When the irradiation area is larger than one irradiation area, the entire area of the first separation layer 20 can be irradiated with the irradiation light 200 in plural times. The same location may be irradiated more than once. Further, the same region or different regions may be irradiated with irradiation light of different types and different wavelength regions twice or more.
【００５０】[第２の接着層９０]第２の接着層９０とし
ては、基本的に第１の接着層７０と同様な材料を用いる
ことができる。[Second Adhesive Layer 90] As the second adhesive layer 90, a material basically similar to that of the first adhesive layer 70 can be used.
【００５１】[第３の基板８０]第3の基板８０として、
用いることのできる材料は、第2の基板５０の説明で述
べた種々の材料と同様のものを使用することができる。
特に、軽量性、可撓性、弾性などに優れた樹脂材料を用
いることにより、製造される積層体にこれらの機械的性
質を付与することができ、材料コスト、製造コストも低
減できるという利点を有する。なお、第3の基板８０
は、例えば、液晶セルのように、それ自体独立したデバ
イスを構成するものや、例えば、カラーフィルター、電
極層、誘電体層、絶縁層、半導体素子のように、デバイ
スの一部を構成するものであっても良い。また、第3の
基板８０は、例えば、金属、セラミックス、石材、木
材、紙材等の物質であっても良いし、さらには、時計の
文字盤、自動車のフロントガラス、エアコンの表面、プ
リント基板、柱、天井、窓ガラス等の構造物の表面であ
っても良い。[Third Substrate 80] As the third substrate 80,
As materials that can be used, various materials described in the description of the second substrate 50 can be used.
In particular, by using a resin material excellent in lightness, flexibility, elasticity, and the like, it is possible to impart these mechanical properties to a manufactured laminate, and to reduce the material cost and the manufacturing cost. Have. The third substrate 80
Is a device that constitutes an independent device, such as a liquid crystal cell, or a device that constitutes part of a device, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. It may be. The third substrate 80 may be, for example, a material such as metal, ceramics, stone, wood, paper, or the like, and may further include a clock face, a car windshield, an air conditioner surface, and a printed circuit board. , A column, a ceiling, a window glass or the like.
【００５２】[照射光２１０]第2分離層６０に対する光
照射に用いる、第２基板５０を透過する照射光２１０と
しては、照射光２００の説明で述べたものと同様の各種
光を用いることができる。第2の分離層６０が水素化ア
モルフアスシリコンから成る場合には、照射光２１０と
してエキシマレーザーを用いることが好ましい。[Irradiation Light 210] As the irradiation light 210 used for light irradiation on the second separation layer 60 and transmitted through the second substrate 50, various lights similar to those described in the description of the irradiation light 200 may be used. it can. When the second separation layer 60 is made of hydrogenated amorphous silicon, it is preferable to use an excimer laser as the irradiation light 210.
【００５３】[0053]
【発明の効果】以上述べたように、本発明に係る転写技
術を用いれば、基板に形成した積層順序を維持したま
ま、薄膜デバイスを、その使用時に適した他の基板上へ
転写することが可能となる。例えば、薄膜を直接形成す
ることができないか、または形成するのに適さない材
料、成型が容易な材料、安価な材料等で横成されたもの
や、移動しにくい大型の物体等に対しても、転写により
それを形成することができる。As described above, by using the transfer technique according to the present invention, it is possible to transfer a thin film device onto another substrate suitable for its use while maintaining the lamination order formed on the substrate. It becomes possible. For example, a material that cannot be directly formed or is not suitable for forming a thin film, a material that is easy to mold, a material horizontally laid with an inexpensive material, or a large object that is difficult to move. It can be formed by transfer.
【００５４】特に、転写先基板（例えば、第3の基板８
０）は、各種合成樹脂や融点の低いガラス材のような、
製造元基板（第1基板）材料に比べて耐熱性、耐食性等
の特性が劣るものを用いることができる。そのため、例
えば、透明基板上に薄膜トランジスタをすくむ薄膜デバ
イスを製造するに際しては、製造元基板として耐熱性に
優れる石英ガラス基板を用い、転写先基板として、各種
合成樹脂や融点の低いガラス材のような、安価で且つ加
工のし易い材料を用いることにより、安価な薄膜デバイ
スを安定して製造することが容易となる。また、軽量で
柔軟性に富む、新規な薄膜デバイスの製造も可能であ
る。In particular, the transfer destination substrate (for example, the third substrate 8
0), such as various synthetic resins and glass materials having a low melting point,
A material having inferior properties such as heat resistance and corrosion resistance as compared with the material of the manufacturer substrate (first substrate) can be used. Therefore, for example, when manufacturing a thin film device in which a thin film transistor is formed on a transparent substrate, a quartz glass substrate having excellent heat resistance is used as a manufacturer substrate, and various synthetic resins and glass materials having a low melting point are used as a transfer destination substrate. By using an inexpensive and easy-to-process material, it is easy to stably manufacture an inexpensive thin-film device. It is also possible to manufacture a novel thin-film device that is lightweight and flexible.
【００５５】また、本発明の実施形態によれば、上述し
たように、第2基板の離脱を速やかに行うことができ
る。これにより、大面積の薄膜デバイスを短時間で効率
よく転写することが可能となり、製造コストの低減に効
果的である。Further, according to the embodiment of the present invention, as described above, the second substrate can be quickly separated. This makes it possible to transfer a large-area thin-film device efficiently in a short time, which is effective in reducing the manufacturing cost.
【図1】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 1 is a diagram showing an embodiment of a method for manufacturing a laminate of the present invention.
【図2】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 2 is a diagram illustrating an embodiment of a method for manufacturing a laminate of the laminate of the present invention.
【図3】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 3 is a diagram illustrating an embodiment of a method for manufacturing a laminate of the present invention.
【図4】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 4 is a diagram showing an embodiment of a method for manufacturing a laminate of the present invention.
【図5】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 5 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.
【図6】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 6 is a diagram showing an embodiment of a method for manufacturing a laminate of the present invention.
【図7】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 7 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.
【図8】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 8 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.
【図9】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 9 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.
【図10】本発明の積層体の積層体の製造方法に係る実施
の形態を示す図である。FIG. 10 is a diagram showing an embodiment of the method for manufacturing a laminate of the laminate of the present invention.
【図11】アモルファスシリコンの透過率の波長依存性を
示す図である。FIG. 11 is a diagram illustrating the wavelength dependence of the transmittance of amorphous silicon.
10、50、80 基板 20 第1の分離層 30 中間層 40 被転写層 60 第2分離層 70、90 接着層 10, 50, 80 Substrate 20 First separation layer 30 Intermediate layer 40 Transfer layer 60 Second separation layer 70, 90 Adhesive layer
Claims (19)
の基材を配置する工程と、 前記第２の基材と、第２の分離層を含む第３の基材と、
を接着する工程と、 光照射を行うことにより、前記第1分離層の層内及び前
記第１の分離層と接する他の層との境界面のうち少なく
ともいずれかで、剥離を生ぜしめ、前記第２の基材及び
前記第３の基材を含む第１の積層体を分離させる工程
と、 前記第１の積層体と第４の基材とを接着し、第２の積層
体を得る工程と、 光照射を行うことにより、前記第２の分離層の層内及び
前記第２の分離層と接する他の層との境界面のうち少な
くともどちらかで、剥離を生ぜしめ、前記第２の分離層
を境界として、前記第２の積層体を分割する工程と、 を含む積層体の製造方法。1. A method according to claim 1, wherein a second substrate is provided on a first substrate including a first separation layer.
Arranging a base material of the second base material, a third base material including a second separation layer,
Bonding, and by irradiating light, at least one of the interface between the layer of the first separation layer and a boundary surface with another layer in contact with the first separation layer to cause peeling, A step of separating a first laminate including a second base material and the third base material; and a step of bonding the first laminate and a fourth base material to obtain a second laminate. By performing light irradiation, delamination occurs in at least one of the inside of the second separation layer and the boundary surface with another layer in contact with the second separation layer, A step of dividing the second laminate with a separation layer as a boundary.
て、 前記第２の基材は薄膜デバイスを含んでいること、 を特徴とする積層体の製造方法。2. The method for manufacturing a laminate according to claim 1, wherein the second base material includes a thin-film device.
らに前記第１の分離層の上に薄膜デバイスを含む被転写
体を形成する工程と、 第２の基板上に第２の分離層を形成する工程と、 前記被転写体と前記第２の分離層とを第１の接着層を介
して接着する工程と、 光照射により前記第１の分離層の層内及び前記第１の分
離層と接する他の層との境界面のうち少なくともいずれ
かで剥離を生ぜしめ、前記被転写体を前記第１の基板の
側から前記第２の基板の側に転写する工程と、 前記第２基板の側に転写された前記被転写体と第３の基
板とを第２の接着層を介して接着する工程と、 光照射により前記第２の分離層の層内及び前記第２の分
離層と接する他の層との境界面のうち少なくともいずれ
かで剥離を生ぜしめ、前記被転写体を、前記第２の基板
の側から前記第３の基板の側に転写する工程と、 を含む積層体の製造方法。3. A step of forming a first separation layer on a first substrate, and further forming a transfer object including a thin film device on the first separation layer; Forming a second separation layer, bonding the transfer-receiving body and the second separation layer via a first bonding layer, and irradiating light to the inside of the first separation layer and the second separation layer. Causing peeling at least at one of the boundary surfaces between the first separation layer and another layer in contact with the first separation layer, and transferring the transfer target from the side of the first substrate to the side of the second substrate; Bonding the transfer target transferred to the side of the second substrate and the third substrate through a second bonding layer; and irradiating the second substrate with the second substrate by light irradiation. At least one of the boundary surfaces between the second separation layer and the other layer in contact with the second separation layer. Method for producing a laminate comprising the steps, a to be transferred to the side of the third substrate from the side of the substrate.
て、前記第1の接着層を取り除く工程をさらに含むこ
と、 を特徴とする積層体の製造方法。4. The method for manufacturing a laminate according to claim 3, further comprising a step of removing said first adhesive layer.
て、前記第1の接着層が溶媒に可溶であることを特徴と
する積層体の製造方法。5. The method for producing a laminate according to claim 4, wherein the first adhesive layer is soluble in a solvent.
て、前記第1の接着層が水溶性であること、 を特徴とする積層体の製造方法。6. The method for manufacturing a laminate according to claim 5, wherein the first adhesive layer is water-soluble.
の製造方法において、前記第２の分離層がアモルファス
シリコンにより構成されていること、 を特徴とする積層体の製造方法。7. The method according to claim 1, wherein the second separation layer is made of amorphous silicon.
の製造方法において、前記第１分離層がアモルファスシ
リコンにより構成されていること、 を特徴とする積層体の製造方法。8. The method for manufacturing a laminate according to claim 1, wherein said first separation layer is made of amorphous silicon.
法において、前記アモルファスシリコンが1 at％以上の
水素を含有すること、 を特徴とする積層体の製造方法。9. The method for manufacturing a laminate according to claim 7, wherein said amorphous silicon contains 1 at% or more of hydrogen.
体の製造方法おいて、前記アモルファスシリコンが１０
〜２０at％の水素を含有すること、 を特徴とする積層体の製造方法。10. The method of manufacturing a laminate according to claim 7, wherein said amorphous silicon is
A method for producing a laminated body, characterized by containing at20 at% of hydrogen.
層体の製造方法において、100ナノ秒以下のパルス幅を
有する光を前記光照射に用いること、 を特徴とする積層体の製造方法。11. The method for manufacturing a laminate according to claim 1, wherein light having a pulse width of 100 nanoseconds or less is used for the light irradiation. .
層体の製造方法おいて、レーザーを光源とする光を前記
光照射に用いること、 を特徴とする積層体の製造方法。12. The method of manufacturing a laminate according to claim 1, wherein light using a laser as a light source is used for the light irradiation.
おいて、エキシマレーザーを光源とする光を前記光照射
に用いること、 を特徴とする積層体の製造方法。13. The method for manufacturing a laminate according to claim 12, wherein light using an excimer laser as a light source is used for the light irradiation.
体の製造方法において、光硬化性材料を光硬化させるこ
とにより前記第１の接着層を形成すること、 を特徴とする積層体の製造方法。14. The method of manufacturing a laminate according to claim 3, wherein the first adhesive layer is formed by photo-curing a photo-curable material. Manufacturing method.
おいて、前記第２分離層がアモルファスシリコンから構
成されており、前記第２分離層の膜厚が１０nm以下であ
ること、 を特徴とする積層体の製造方法。15. The method for manufacturing a laminate according to claim 14, wherein the second separation layer is made of amorphous silicon, and the thickness of the second separation layer is 10 nm or less. Of producing a laminated body.
おいて、前記光硬化性材料を光硬化させる際に用いる光
の前記第２の分離層に対する透過量が、前記第２の分離
層の層内または前記第２の分離層と接する他の層との境
界面の少なくともいずれかにおいて剥離を生ぜしめる際
に用いる光の前記第２の分離層に対する透過量より大で
あること、 を特徴とする積層体の製造方法。16. The method for manufacturing a laminate according to claim 14, wherein an amount of light used for photocuring the photocurable material to the second separation layer is equal to or less than the second separation layer. Greater than the amount of light transmitted through the second separation layer, which is used to cause separation in at least one of the interface with the other layer in contact with the second separation layer, Of producing a laminated body.
層体の製造方法を用いること、 を特徴とする半導体装置の製造方法。17. A method for manufacturing a semiconductor device, comprising using the method for manufacturing a laminate according to any one of claims 1 to 16.
法を用いて製造された半導体装置。18. A semiconductor device manufactured by using the method for manufacturing a semiconductor device according to claim 17.
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