JP2002239342A - Reaction device by corpuscular ray irradiation - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve problems generated by colliding a corpuscular ray with the thin sealing film stretched over an opening formed in the sidewall of a reaction vessel, in a reaction device by corpuscular ray irradiation for carrying out the required reaction of gas in the reaction vessel by irradiating through the opening the gas in the reaction vessel with the corpuscular ray such as an electron beam. SOLUTION: This reaction device by corpuscular ray irradiation has the reaction vessel 15 and a corpuscular ray irradiation device for irradiating the inside of reactor vessel with the corpuscular ray through an irradiation hole 11 installed on the outside of the reaction vessel and in the sidewall of the reaction vessel. The reaction device is characterized in that the irradiation device is provided with a corpuscular ray irradiation source and an optical system where the corpuscular ray generated in the corpuscular ray irradiation source is oriented to the irradiation hole with the diameter of the corpuscular ray stopped down at the irradiation hole and that the irradiation hole is slightly larger in diameter than the diameter of the stopped corpuscular ray.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique utilizing a reaction by the energy of a particle beam such as an electron beam. And technology for purifying flue gas.

[0002]

2. Description of the Related Art In a conventional desulfurization / denitration apparatus, exhaust gas passes through a reactor and is irradiated with an electron beam through an electron beam entrance window provided on a side surface of the reactor. Was coated with a thin film of Ti (titanium) or SUS (stainless steel), and sealed the inside of the reactor from the outside.

In such an apparatus, for example, Ti has a thickness of 50 μm.
When an electron beam is irradiated at an acceleration voltage of 800 KV and an electron current of about 500 mA, the temperature in the thin film rises sharply.Therefore, a large current is applied to the deflector and the beam is shaken to cover a large area of the thin film. An electron beam was irradiated, thereby reducing heat generation per unit area. On the other hand, when the accelerating voltage of the electron beam was low, the energy loss at the entrance window (thin film) became large, so the high accelerating voltage and small current had to be used, and the generation of X-rays was large.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and eliminates a thin film in a window so as to eliminate energy loss in an entrance window and reduce costs by enabling a low acceleration voltage and a large current. It is an object of the present invention to provide such a device.

[0005]

That is, the present invention provides a reaction vessel and an irradiation port provided outside the reaction vessel and provided on a side wall of the reaction vessel for irradiating the inside of the reaction vessel with a particle beam. Having a particle beam irradiation device, the particle beam irradiation device, the particle beam generation source, the particle beam generated in the particle beam generation source, so that the diameter is reduced in the irradiation port of the reaction vessel A particle beam irradiation reaction apparatus having an optical system for directing light to the irradiation port, wherein the irradiation port has a diameter slightly larger than the diameter of the focused particle beam.

In this particle beam irradiation reactor, since no thin film is provided at the entrance of the reaction vessel, it is possible to substantially eliminate the problems such as energy loss caused by providing the thin film in the prior art as described above. Can be.

The particle beam source of the particle beam irradiation apparatus has a particle acceleration voltage of 50 kV to 200 kV and a particle beam current of 1 kV to 200 kV.
10A. The particle beam irradiation device aligns the particle beam directed from the particle source to the irradiation port with the irradiation port by using X-rays generated when the particle beam is incident on the wall surface defining the irradiation port. It is preferred to minimize it.

[0008] Further, the reaction vessel is adapted to allow the irradiation gas to be irradiated with the particle beam to pass in a predetermined direction, and by irradiating the irradiation gas to be passed through the reaction vessel with the particle beam, a reaction is caused. Can be

Further, a plurality of particle beam irradiation devices are provided so as to irradiate the gas to be irradiated with the particle beam in a direction perpendicular to the predetermined direction through which the gas passes and from different directions. The reaction of the irradiation gas can be performed efficiently.

[0010]

Embodiments of the present invention will be described below. FIG. 1 is an explanatory diagram of an embodiment of the electron beam irradiation reaction device of the present invention.

The apparatus comprises a reaction vessel (duct) 15 through which an irradiation target gas to be irradiated with an electron beam is reacted and an electron beam irradiation through an irradiation port 11 provided on a side wall of the reaction vessel. It has a device 5. The electron beam irradiation device 1
Reference numeral 5 denotes an electron gun cathode 1 and a filament 2 for heating the cathode 1. A voltage of several KV is applied between the cathode and the filament, and the cathode is heated by electron impact. Is done. The electron beam emitted from the cathode is converted into a substantially parallel beam by a Wehnelt (focusing electrode) 3 and an anode 4, incident on a focusing lens 8 and focused on an irradiation port 11 of a reaction vessel 15. . In the figure, 6
Denotes an outermost trajectory of an electron beam, and 7 denotes an electron beam alignment coil.

If the focal length of the lens 8 is 50 mm, the spherical aberration coefficient and the chromatic aberration coefficient of this lens are both about 50 mm. Since the beam is not deflected, coma, field curvature, and field astigmatism can be ignored. The chromatic aberration △ Cc and the spherical aberration △ Cs have an aperture angle of 10 mrad and ΔV / V ₀ = 1 × 10 ^-4.
Then, the following values are obtained.

ΔCc = 10 ⁻² × 1 × 10 ⁻⁴ × 50 mm = 0.
5 × 10 ⁻⁴ = 0.005 μm ΔCs = 1/4 (10 ⁻² ) ³ × 50 mm = 10 ⁻⁶ × 50 mm × 1
/4=12.5 μm The space charge effect is as follows when the beam current I is 1 A, the acceleration voltage V is 100 KV, the optical path length L is 5 cm, and the aperture angle α is 10 mrad.

[0014] ^{△ Ccs = 10 4/2 ×} (L · I) / (αV 3/2) cm = 10 4/2 × (5 × 1) / (10 -2 × 100000 3/2) cm = 791μm △ FIG. 2 shows the aperture angle dependence of Csc and ΔCs. △ Csc and △
The sum of Cs (TOTAL) is the curve of FIG.
tal) is 37 when α = 25 mrad, as is clear from FIG.
The beam becomes 0 μmφ.

Therefore, the voltage applied to the electron gun electrodes (Wehnelt 3, anode 4) is adjusted so that 50
The beam diameter of the irradiation port 11 can be set to 370 μmφ by adjusting the beam so that the beam becomes mm × 25 mrad × 2 = 2.5 mmφ, and the lens 8 is adjusted to focus on the irradiation port 11.

If the aperture is three times as large as the beam diameter,
The beam hardly enters the inner wall surface of the aperture. Lens 8
The electron gun side has an inner diameter of 8 mmφ.
With a diameter of mmφ, the energy loss caused by the beam entering the inner surface of the irradiation port when entering the irradiation port can be minimized.

In FIG. 1, the diameter of the irradiation port 11 is 1 mmφ, and the position of the lens 8 is 10 mmφ, during which the inner diameter changes linearly. A low vacuum side differential exhaust pipe 10 and a differential exhaust pipe 9 outside the low vacuum side differential exhaust pipe 10 are provided around the reaction vessel 15, and the low vacuum side differential exhaust pipe 10 is provided with a low vacuum such as a mechanical booster or a rotary pump. The differential pump 9 is connected to a high vacuum pump such as a turbo molecular pump to exhaust gas leaking from the reaction vessel.

An X-ray detector 16 is provided on the surface of the reaction vessel 15 facing the irradiation port 11 so as to detect X-rays generated when an electron beam enters the irradiation port 11. The excitation current of the axis aligning device 7 and the lens 8 is adjusted to minimize the amount of X-rays generated. An electrode 14 of 50 KV is provided near the irradiation port 11 so as to prevent the incident electron beam from immediately entering the reaction duct 15 near the entrance.

An electrode 17 of +100 KV is provided on the opposite surface of the entrance so that the electron beam which has lost energy due to collision with smoke can be activated. When the energy of the electron beam is small, for example, when the beam diameter is several μm, if a small space is provided in the middle of the irradiation port and the space is evacuated by a turbo molecular pump with an exhaust speed of about 100 L / s, 10 ^{− Since} the pressure can be set to about ² Pa, the electron beam can be sufficiently taken out to the atmosphere without a window by the one-stage differential pumping section. The irradiation port is, for example, 5 μm
200 μm in width, 0.5 mm in thickness and 20 in 50 μm width
A slit having a length of 0 μm, a thickness of 370 mm, or the like can be formed, and the electron beam can be shaken in accordance with the slit.

FIG. 3 schematically shows an entire electron beam irradiation reaction apparatus (exhaust processing apparatus) according to another embodiment of the present invention. In this apparatus, in order to obtain an irradiation amount of 800 KW, four 200 KV × 1 A electron beam irradiation apparatuses 5 are arranged apart from each other. High voltage power supply 31 is -100KV ×
The current was set to 1A, and a lens current, an alignment coil, and an electron gun electrode were also prepared. 34 is provided as a positive electrode power supply, and +100
KV, 4 A, and connected to four electrodes 14. 33 is a mechanical booster pump, and 32 is a tap molecular pump.

[0021]

As described above, according to the present invention, the entrance window 11 is not provided with a thin film unlike the conventional apparatus, so that the energy loss caused in the conventional thin film can be eliminated and the acceleration voltage can be reduced to 200 KV. Since the power supply can be reduced to the following, a low-cost power supply can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an outline of an electron beam irradiation reaction apparatus according to an embodiment of the present invention.

FIG. 2 is a graph showing how narrow beam convergence can be achieved.

FIG. 3 is a diagram schematically showing an electron beam irradiation reaction device according to another embodiment of the present invention.

FIG. 4 is a power supply wiring diagram in the device of FIG. 3; 1: Electron gun cathode 2: Filament 3: Focusing electrode (Wehnelt) 4: Anode 5: Irradiation device 6: Beam outermost track 7: Alignment coil 8: Focusing lens 9: Differential exhaust tube 10: Low Vacuum-side differential exhaust pipe 11: Irradiation port 12: Smoke flow direction 13: Electron beam average trajectory 14: Negative electrode 15: Duct 16: X-ray detector 17: Positive high voltage electrode 31: Power supply for electron gun etc. 32: Data -Molecular pump 33: Mechanical booster pump 34: Positive high voltage power supply

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) G21K 5/04 B01D 53/34 129C ZAB (72) Inventor Mamoru Nakasuji 11-1 Haneda Asahimachi, Ota-ku, Tokyo Ebara Mai Star Co., Ltd. (72) Inventor Tsutomu Karima 11-1 Haneda Asahimachi, Ota-ku, Tokyo F-term in Ebara Corporation (reference) 4D002 AA02 AA12 BA09 GA01 GB20 4G075 AA03 AA37 AA42 BA01 BA05 CA38 CA65 DA02 EA05 EB01 EB34 EC21 FA01

Claims (5)

[Claims] Claims: 1. A reaction vessel, and a particle beam irradiation device that is set outside the reaction vessel and irradiates a particle beam into the reaction vessel through an irradiation port provided on a side wall of the reaction vessel, The particle beam irradiation device, a particle beam generation source, the particle beam generated in the particle beam generation source, so that the diameter of the irradiation port of the reaction vessel is narrowed, and an optical system for directing to the irradiation port Wherein the irradiation port has a diameter slightly larger than the diameter of the focused particle beam. 2. The particle beam generator according to claim 1, wherein said particle beam generator has a particle acceleration voltage of 50 KV to 200 KV and a particle beam current of 1 to 10 A.
3. The particle beam irradiation reaction device according to item 1. 3. The method of aligning a particle beam directed from a particle source to the irradiation port with the irradiation port by the particle beam irradiation apparatus, wherein the particle beam is incident on a wall surface defining the irradiation port. 3. The particle beam irradiation reactor according to claim 1, wherein X-rays generated by the irradiation are minimized. 4. The particle beam irradiation reaction apparatus according to claim 1, wherein said reaction vessel is adapted to pass a gas to be irradiated with a particle beam in a predetermined direction. 5. A plurality of particle beam irradiation devices are provided so as to irradiate a gas to be irradiated with a particle beam in a direction perpendicular to the predetermined direction through which the gas passes and in directions different from each other. The particle beam reactor according to any one of claims 1 to 3, wherein