JP2002319597A - Bonding wire and manufacturing method thereof - Google Patents
Bonding wire and manufacturing method thereofInfo
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- JP2002319597A JP2002319597A JP2002004346A JP2002004346A JP2002319597A JP 2002319597 A JP2002319597 A JP 2002319597A JP 2002004346 A JP2002004346 A JP 2002004346A JP 2002004346 A JP2002004346 A JP 2002004346A JP 2002319597 A JP2002319597 A JP 2002319597A
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- wire
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- annealing
- bonding
- bonding wire
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Abstract
(57)【要約】
【課題】 狭いボンディングピッチであってもワイヤボ
ンディング時におけるリーニング不良の発生を抑制で
き、且つワイヤ流れにも強い、引張強度に優れたボンデ
ィングワイヤを提供する。
【解決手段】 ワイヤ鋳造材を縮径伸線して最終焼鈍す
る際に、縮径伸線の途中に少なくもと1回の途中焼鈍を
行うと共に、途中焼鈍を経て最終焼鈍に至る各焼鈍時ま
でのワイヤの面積加工率を75〜99.997%とす
る。得られるボンディングワイヤは、523Kの温度雰
囲気にて15〜25秒間加熱した後に引き続き前記52
3K(250℃)の温度雰囲気で測定した引張強度(高
温強度)が、298K(25℃)の温度雰囲気にて測定
した0.2%耐力よりも高くなり、前記高温強度を測定
することで簡単にボンディングワイヤを評価管理でき
る。
(57) [Problem] To provide a bonding wire that can suppress occurrence of leaning failure during wire bonding even with a narrow bonding pitch, is resistant to wire flow, and has excellent tensile strength. SOLUTION: When reducing the diameter of a wire cast material and performing final annealing, at least one intermediate annealing is performed in the middle of the diameter reducing wire drawing, and at the time of each annealing reaching the final annealing through the intermediate annealing. Up to 75 to 99.997%. The resulting bonding wire was heated for 15 to 25 seconds in an atmosphere of
The tensile strength (high-temperature strength) measured in a temperature atmosphere of 3K (250 ° C) is higher than the 0.2% proof stress measured in a temperature atmosphere of 298K (25 ° C). The bonding wire can be evaluated and managed.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子上の電
極とパッケージ等の外部電極とを電気的に接続するため
に用いる半導体素子用のボンディングワイヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire for a semiconductor element used for electrically connecting an electrode on the semiconductor element to an external electrode such as a package.
【0002】[0002]
【従来の技術】従来、半導体素子上の電極と外部リード
とを接続するために用いられるボンディングワイヤは、
溶解鋳造した後にロール加工を施して所定組成のワイヤ
鋳造材を作製し、これをダイヤモンドダイス等によっ
て、例えば15μmや30μm等の所定線径まで縮径伸
線加工し、更に最終焼鈍により加工歪みを除去して製造
されている。2. Description of the Related Art Conventionally, a bonding wire used to connect an electrode on a semiconductor element to an external lead is:
After melt-casting, it is subjected to roll processing to produce a wire cast material having a predetermined composition, which is reduced in diameter by a diamond die or the like to a predetermined wire diameter of, for example, 15 μm or 30 μm, and further processed by final annealing to reduce processing strain. Manufactured with removal.
【0003】このようにして製造されるボンディングワ
イヤは、半導体素子並びにパッケージのサイズの小型縮
小化に対応させるため、細線化と共に、より高い引張強
度の実現が図られてきた。即ち、半導体素子が小さくな
ると素子上の電極も小さくなるため、ワイヤボンディン
グの際にワイヤ先端に溶融形成されるボールのサイズも
電極に合わせて小さくしなければならない。そのためボ
ンディングワイヤの線径も細線化しなければならず、細
くなったボンディングワイヤの断線を防止するために、
単位面積当たりの引張強度を高めることが必要である。[0003] The bonding wire manufactured in this way has been designed to be thinner and to achieve higher tensile strength in order to cope with the miniaturization of semiconductor elements and packages. That is, as the size of the semiconductor element becomes smaller, the size of the electrode on the element becomes smaller. Therefore, the size of a ball melt-formed at the tip of the wire during wire bonding must be reduced in accordance with the size of the electrode. Therefore, the wire diameter of the bonding wire must be reduced, and in order to prevent disconnection of the thinned bonding wire,
It is necessary to increase the tensile strength per unit area.
【0004】[0004]
【発明が解決しようとする課題】近年、半導体素子の高
集積化並びにパッケージの小型縮小化の進行に伴って、
ワイヤ間隔(ボンディングピッチ)が狭まり、またボン
ディングワイヤのループ長も4mmや5mmのように長
くなってきた。このため、角度にして極めて小さな曲が
りやリーニングであっても、隣り合うボンディングワイ
ヤ同士が接触し易くなり、ショート不良が多発するとい
う問題が発生している。In recent years, with the progress of high integration of semiconductor devices and miniaturization of packages,
The wire interval (bonding pitch) has become narrower, and the loop length of the bonding wire has become longer, such as 4 mm or 5 mm. For this reason, even if the bending or leaning is extremely small in angle, the bonding wires adjacent to each other easily come into contact with each other, and there is a problem that short-circuit failure occurs frequently.
【0005】リーニング不良とは、図2に示すように、
ワイヤボンディング後のボンディングワイヤ1をそのル
ープと平行な方向から観察したときに、半導体素子4の
パッドに接着したボール2の直ぐ上の部分(ボール直上
部3)においてボンディングワイヤ1が横方向に傾斜
し、傾斜したボンディングワイヤ1のループ上部1aが
隣接するワイヤのループ上部1bに近接している状態を
言う。こうした状態は電気的ショートの原因となるた
め、リーニング不良の発生したパッケージは不良品とし
て処理され、製品歩留りを大きく低下させる要因となっ
ている。[0005] Leaning failure is, as shown in FIG.
When the bonding wire 1 after the wire bonding is observed from a direction parallel to the loop, the bonding wire 1 is inclined in a lateral direction at a portion immediately above the ball 2 adhered to the pad of the semiconductor element 4 (directly above the ball 3). This means that the upper loop portion 1a of the inclined bonding wire 1 is close to the upper loop portion 1b of the adjacent wire. Since such a state causes an electrical short, a package in which a leaning failure has occurred is treated as a defective product, which is a factor that greatly reduces the product yield.
【0006】しかも、ボンディングワイヤがリーニング
不良を起こしやすいか否かは、試験的にワイヤボンディ
ングを行った後に、ボール直上部の引張強度を測定する
ことによって評価していた。このため、リーニング不良
を起こし難いボンディングワイヤの評価管理が極めて面
倒であった。[0006] Whether or not the bonding wire is liable to cause a leaning defect has been evaluated by measuring the tensile strength immediately above the ball after conducting a wire bonding test. For this reason, the evaluation management of the bonding wire which is unlikely to cause a leaning defect is extremely troublesome.
【0007】尚、焼鈍により伸び率を高めて柔らかくし
たボンディングワイヤでは、リーニング不良が低下する
傾向が認められる。しかしながら、その焼鈍によって同
時にボンディングワイヤの引張強度が低下してしまうた
め、後の樹脂モールド工程においてワイヤ流れが発生し
やすくなり、ネック倒れ不良を引き起こすという問題が
あった。[0007] In the case of a bonding wire whose elongation rate is increased by annealing to soften, the tendency of the leaning failure to decrease is recognized. However, the annealing reduces the tensile strength of the bonding wire at the same time, so that a wire flow is likely to occur in a later resin molding step, and there is a problem that a neck collapse failure occurs.
【0008】ネック倒れ不良は、図3に示すように、ワ
イヤボンディング後のボンディングワイヤ1をそのルー
プに直角な方向から観察したときに、ボール直上部3で
ループがリードフレーム5等とのセカンドボンディング
側に引っ張られて倒れる現象である。このネック倒れ不
良は、千鳥ボンディングの外側ワイヤ1cで発生すると
内側ワイヤ1dに近接するため、リーニング不良と同様
に電気的ショートの原因となりやすかった。As shown in FIG. 3, when the bonding wire 1 after wire bonding is observed from a direction perpendicular to the loop, the loop is formed by the second bonding with the lead frame 5 or the like just above the ball 3 as shown in FIG. It is a phenomenon of being pulled by the side and falling down. When this neck collapse failure occurs in the outer wire 1c of the staggered bonding, it is close to the inner wire 1d, so that it is likely to cause an electrical short as in the case of the leaning failure.
【0009】本発明は、このような従来の事情に鑑み、
直進性に優れていてリーニング不良を抑制することがで
き、同時にワイヤ流れが少なく、ネック倒れ不良の発生
を防止することのできる、引張強度に優れたボンディン
グワイヤ及びその製造方法を提供することを目的とす
る。The present invention has been made in view of such conventional circumstances,
An object of the present invention is to provide a bonding wire having excellent tensile strength, excellent in straightness, capable of suppressing a leaning defect, and at the same time, having a small wire flow and preventing occurrence of a neck falling defect, and a method of manufacturing the same. And
【0010】[0010]
【課題を解決するために手段】上記目的を達成するた
め、本発明が提供するボンディングワイヤは、523K
の温度雰囲気にて15〜25秒間加熱した後に引き続き
前記523Kの温度雰囲気で測定した引張強度が、29
8Kの温度雰囲気にて測定した0.2%耐力よりも高い
ことを特徴とする。In order to achieve the above object, a bonding wire provided by the present invention is 523K.
After heating for 15 to 25 seconds in a temperature atmosphere of
It is characterized by a higher than 0.2% proof stress measured in a temperature atmosphere of 8K.
【0011】上記本発明のボンディングワイヤにおいて
は、523Kの温度雰囲気にて15〜25秒間加熱した
後に引き続き前記523Kの温度雰囲気で測定した引張
強度が、公称応力で200MPa以上であることが好ま
しい。[0011] In the bonding wire of the present invention, it is preferable that the tensile strength measured in the 523K temperature atmosphere after heating in the 523K temperature atmosphere for 15 to 25 seconds is 200 MPa or more in nominal stress.
【0012】尚、523Kの温度雰囲気にて15〜25
秒間加熱された後に引き続き同じ温度雰囲気で測定した
引張強度は、古くから高温強度あるいは熱間強度と称さ
れ、ボンディング時のボンディングワイヤの特性を推察
する指標として世界的に広く利用されている。また、
0.2%耐力とは、負荷した応力とひずみとの関係で、
途中で除荷したときに0.2%の永久ひずみが残る応力
をいう。公称応力とは、変形前の最初の断面積で外力を
割った値を意味する。In a 523K temperature atmosphere, 15 to 25
The tensile strength measured after heating for two seconds in the same temperature atmosphere has long been referred to as high-temperature strength or hot strength, and has been widely used worldwide as an index for estimating the characteristics of a bonding wire during bonding. Also,
0.2% proof stress is the relationship between applied stress and strain,
This is the stress at which a permanent set of 0.2% remains when unloaded on the way. Nominal stress means a value obtained by dividing an external force by an initial cross-sectional area before deformation.
【0013】また、本発明におけるボンディングワイヤ
の製造方法は、ワイヤ鋳造材を所定の線径まで縮径伸線
した後に最終焼鈍するボンディングワイヤの製造方法に
おいて、縮径伸線工程の途中に少なくもと1回の途中焼
鈍を行うと共に、ワイヤ鋳造材から最初の途中焼鈍ま
で、途中焼鈍から次の途中焼鈍まで、及び最後の途中焼
鈍から最終焼鈍までの各縮径伸線におけるワイヤの面積
加工率を75〜99.997%とすることを特徴とす
る。[0013] The method of manufacturing a bonding wire according to the present invention is a method of manufacturing a bonding wire in which a wire cast material is reduced in diameter to a predetermined wire diameter and then finally annealed. And one-time intermediate annealing, and the area reduction rate of the wire in each diameter reduction drawing from the wire cast material to the first intermediate annealing, from the intermediate annealing to the next intermediate annealing, and from the last intermediate annealing to the final annealing Is 75 to 99.997%.
【0014】上記本発明のボンディングワイヤの製造方
法においては、前記途中焼鈍の温度が、ワイヤ鋳造材の
1次再結晶温度以上であって2次再結晶温度を超えない
温度であることが好ましい。In the above method of manufacturing a bonding wire according to the present invention, it is preferable that the temperature of the intermediate annealing is a temperature not lower than the primary recrystallization temperature of the wire casting material and not exceeding the secondary recrystallization temperature.
【0015】[0015]
【発明の実施の形態】ワイヤボンディング時には、キャ
ピラリー動作によってボール直上部に塑性変形が加えら
れ、ボンディングワイヤのループが形成されるため、リ
ーニング不良にはボール直上部の引張強度が関係すると
考えられる。そこで、本発明者らは、523K(250
℃)の温度雰囲気で15〜25秒間加熱された後に引き
続き同じ523Kの温度雰囲気で測定した引張強度(以
後、高温強度と云う)と、ワイヤボンディング後のボー
ル直上部の引張強度との関係を調査したところ、図1に
示すように両者には強い正の相関関係があることが判明
した。DESCRIPTION OF THE PREFERRED EMBODIMENTS At the time of wire bonding, a plastic deformation is applied to the upper portion of the ball by a capillary action, and a loop of the bonding wire is formed. Therefore, the present inventors have determined that 523K (250
C.) for 15 to 25 seconds and then the relationship between the tensile strength (hereinafter referred to as high-temperature strength) measured in the same 523 K temperature atmosphere and the tensile strength immediately above the ball after wire bonding is investigated. As a result, as shown in FIG. 1, it was found that both had a strong positive correlation.
【0016】そこで、この高温強度とリーニング不良と
の関係について更に詳細に検討した結果、ボンディング
ワイヤの特性として、298K(25℃)の温度雰囲気
で測定した0.2%耐力よりも高い高温強度を有すると
き、リーニング不良が激減することを見出した。また、
このような高温強度を有すると同時に、その高温強度が
公称応力で200MPa以上であるボンディングワイヤ
は、樹脂モールド時のワイヤ流れによるネック倒れ不良
も激減し、更に好ましいことが分った。Therefore, the relationship between the high-temperature strength and leaning failure was examined in more detail. As a result, the high-temperature strength higher than the 0.2% proof stress measured in a temperature atmosphere of 298 K (25 ° C.) was determined as the characteristic of the bonding wire. It was found that when having, leaning defects were drastically reduced. Also,
It has been found that a bonding wire having such high-temperature strength and having a high-temperature strength of 200 MPa or more at a nominal stress also significantly reduces neck collapse failure due to wire flow during resin molding, and is more preferable.
【0017】即ち、本発明のボンディングワイヤは、高
温強度が298Kの温度雰囲気で測定される0.2%耐
力よりも高いことを特徴とし、更に高温強度が公称応力
で200MPa以上であることが好ましい。このような
ボンディングワイヤは直進性に優れ、ボール直上部での
破断無しにワイヤを正常に変形させることが可能とな
り、ループ形成のための過酷なキャピラリー動作におい
てもループがより正しくキャピラリーに追従することが
できるため、リーニング不良が防止されることとなる。That is, the bonding wire of the present invention is characterized in that the high-temperature strength is higher than the 0.2% proof stress measured in a temperature atmosphere of 298 K, and the high-temperature strength is preferably 200 MPa or more in nominal stress. . Such a bonding wire is excellent in straightness and allows the wire to be deformed normally without breaking immediately above the ball, and the loop follows the capillary more correctly even in severe capillary operation for forming a loop. Therefore, leaning failure can be prevented.
【0018】従って、本発明によれば、実際にワイヤボ
ンディングした後のボール直上部の引張強度を測定する
代りに、ボンディングワイヤそのものから簡単に測定で
きる高温強度を基準とすることにより、リーニング不良
が起こり難いボンディングワイヤを簡単に評価管理して
提供することができる。Therefore, according to the present invention, instead of measuring the tensile strength immediately above the ball after the actual wire bonding, the high-temperature strength that can be easily measured from the bonding wire itself is used as a reference, thereby reducing the leaning failure. It is possible to easily evaluate and manage a bonding wire that is unlikely to occur.
【0019】このような高温強度を有する本発明のボン
ディングワイヤは、ワイヤの直進性を低下させ且つリー
ニング不良発生の大きな原因となっているワイヤ組織の
乱れを調整することによって、好ましくは縮径伸線工程
中に途中焼鈍を行うことにより、製造することができ
る。尚、従来の一般的な製造方法により、ワイヤ鋳造材
を途中で全く焼鈍することなく所定の最終線径まで縮径
伸線加工した後、最終焼鈍して製造したボンディングワ
イヤは、0.2%耐力よりも高い高温強度を有すること
はない。The bonding wire of the present invention having such high-temperature strength is preferably formed by reducing the diameter by reducing the straightness of the wire and adjusting the turbulence of the wire structure, which is a major cause of the occurrence of leaning failure. It can be manufactured by performing annealing in the middle of the wire process. According to the conventional general manufacturing method, the bonding wire manufactured by reducing the diameter of the wire cast material to a predetermined final wire diameter without any annealing in the middle and then performing the final annealing is 0.2%. It has no higher temperature strength than proof stress.
【0020】次に、本発明によるボンディングワイヤの
製造方法を具体的に説明する。本発明方法では、ワイヤ
鋳造材を所定の線径まで縮径伸線した後に最終焼鈍して
ボンディングワイヤを製造するが、その縮径伸線工程の
間に1回以上の途中焼鈍を行う。しかも、ワイヤ鋳造材
から途中焼鈍を経て最終焼鈍に至る各焼鈍時までのワイ
ヤの面積加工率、即ちワイヤ鋳造材から最初の途中焼鈍
までの面積加工率、途中焼鈍から次の途中焼鈍までの面
積加工率、及び最後の途中焼鈍から最終焼鈍までの面積
加工率を、それぞれ75〜99.997%の範囲とす
る。Next, a method for manufacturing a bonding wire according to the present invention will be specifically described. In the method of the present invention, the wire cast material is reduced in diameter to a predetermined wire diameter and then finally annealed to produce a bonding wire. One or more intermediate annealings are performed during the diameter reducing and drawing step. Moreover, the area processing rate of the wire from the wire cast material to the final annealing through the intermediate annealing, that is, the area processing rate from the wire cast material to the first intermediate annealing, the area from the intermediate annealing to the next intermediate annealing. The processing rate and the area processing rate from the last halfway annealing to the final annealing are each in the range of 75 to 99.997%.
【0021】ここで、ワイヤの面積加工率(%)とは、
{1−(伸線縮径後の線径/伸線縮径前の線径)2}×
100で定義される。Here, the area processing rate (%) of the wire is
{1- (wire diameter after wire drawing reduction / wire diameter before wire drawing reduction) 2 } ×
Defined at 100.
【0022】上記のごとく各焼鈍時までのワイヤの面積
加工率を75〜99.997%の範囲内とする理由は、
75%未満では所定の線径まで縮径伸線した際のワイヤ
組織に十分な繊維組織が得られないため、ワイヤの直進
性が低下して、安定したループが得られないためであ
る。また、ワイヤの面積加工率が99.997%を超え
てから焼鈍すると、歪みが飽和してワイヤ組織が乱れ、
途中焼鈍及び最終焼鈍の効果が低下するためである。As described above, the reason why the area reduction rate of the wire until each annealing is in the range of 75 to 99.997% is as follows.
If it is less than 75%, a sufficient fiber structure cannot be obtained in the wire structure when the wire is reduced in diameter to a predetermined wire diameter, so that the straightness of the wire is reduced and a stable loop cannot be obtained. Also, if annealing is performed after the wire area processing rate exceeds 99.997%, the strain is saturated and the wire structure is disturbed,
This is because the effects of intermediate annealing and final annealing are reduced.
【0023】また、途中焼鈍における焼鈍温度がワイヤ
鋳造材の1次再結晶温度に満たない場合には、ワイヤ内
の繊維組織に乱れを生じさせる原因となる加工歪を十分
に除去できない。また、焼鈍温度が2次再結晶温度を超
えると、ワイヤ内の結晶が粗大化するため、焼鈍後のワ
イヤの強度が焼鈍前と比較して大幅に低下する。従っ
て、途中焼鈍の焼鈍温度は、ワイヤ鋳造材の1次再結晶
温度以上で、且つ2次再結晶温度を超えないものである
ことが望ましい。If the annealing temperature during the intermediate annealing is lower than the primary recrystallization temperature of the wire casting material, it is not possible to sufficiently remove the processing strain that causes the fiber structure in the wire to be disordered. Further, when the annealing temperature exceeds the secondary recrystallization temperature, the crystal in the wire becomes coarse, so that the strength of the wire after annealing is significantly reduced as compared with that before annealing. Therefore, it is desirable that the annealing temperature of the intermediate annealing is not lower than the primary recrystallization temperature of the wire casting material and not higher than the secondary recrystallization temperature.
【0024】ここで、1次再結晶温度とは、加工歪がと
れて新しい結晶が形成される温度であり、一般に融点T
mに対して0.4〜0.5Tm程度となる。また、2次再
結晶温度とは、1次再結晶温度以上の温度であって、異
常に大きな結晶の発生が起こる温度である。Here, the primary recrystallization temperature is a temperature at which processing strain is removed to form a new crystal.
m is about 0.4 to 0.5 Tm. The secondary recrystallization temperature is a temperature equal to or higher than the primary recrystallization temperature and at which abnormally large crystals occur.
【0025】尚、上記面積加工率の範囲内であれば、途
中焼鈍は複数回繰り返しても良く、ワイヤの直進性向上
の効果は保持される。また、途中焼鈍は、連続焼鈍若し
くは一定時間保持する焼鈍の何れの方式でも良い。しか
し、何れの方式においても、ワイヤの中心部まで十分に
歪を除去する必要がある。If the area processing rate is within the above range, the intermediate annealing may be repeated a plurality of times, and the effect of improving the straightness of the wire is maintained. The intermediate annealing may be either continuous annealing or annealing for a certain period of time. However, in any of the methods, it is necessary to sufficiently remove the distortion up to the center of the wire.
【0026】ボンディングワイヤの組成に関しては、金
を主成分とするワイヤが好ましい。金を主成分とするボ
ンディングワイヤは、ワイヤ内に良好な繊維組織を有す
るため直進性が高く、リーニング不良の少ないループを
安定して得ることができる。金に添加するBe、Ca、
Ce、La、Pdなどの微量成分は、添加量の増大と共
にワイヤ強度を向上させるが、多く添加し過ぎるとボン
ディング中に接合不良を起こす等の不具合が生じるの
で、添加量を適宜調整することが好ましい。具体的に
は、Beは2〜10重量ppm、及びCaは10〜35
重量ppmの範囲に調整することが好ましい。With respect to the composition of the bonding wire, a wire containing gold as a main component is preferable. Since a bonding wire containing gold as a main component has a good fibrous structure in the wire, it has high straightness and can stably obtain a loop with less leaning. Be, Ca added to gold,
Minor components such as Ce, La, and Pd increase the wire strength as the added amount increases. However, if too much is added, problems such as bonding failure during bonding may occur. preferable. Specifically, Be is 2 to 10 ppm by weight, and Ca is 10 to 35 ppm.
It is preferable to adjust to the range of ppm by weight.
【0027】[0027]
【実施例】実施例1 純度99.999重量%以上の高純度AuにCaを20
重量ppmとBeを10重量ppm添加した組成(以
下、「4N組成」と言う)の金合金と、同じ高純度Au
にCaを30重量ppmとBeを5重量ppmとPdを
500重量ppm添加した組成(以下「3N組成」とい
う)の金合金について、それぞれ溶解鋳造後に溝ロール
圧延して、線径25mmのワイヤ鋳造材を製造した。【Example】Example 1 20 Ca in high purity Au of 99.999% by weight or more
Composition containing 10 ppm by weight of Be and 10 ppm by weight of Be (hereinafter referred to as “Be”).
(Hereinafter referred to as “4N composition”) and the same high purity Au
30 ppm by weight of Ca, 5 ppm by weight of Be and Pd
500 ppm by weight (hereinafter referred to as “3N composition”)
F) for the gold alloy
By rolling, a wire cast material having a wire diameter of 25 mm was manufactured.
【0028】得られた各ワイヤ鋳造材について、下記表
1に示すように縮径伸線と途中焼鈍を実施して、最終線
径を25μmとした後、常温での伸び率が4〜6%とな
るように最終焼鈍(連続焼鈍)を施した。本発明例及び
比較例の各試料について、各焼鈍時の線径と各焼鈍まで
の面積加工率、各焼鈍の温度と時間又は方式を、それぞ
れ下記表1に示した。最後に、ワイヤ表面に単分子膜厚
相当のポリオキシレンアルキルエーテルを塗布し、金ボ
ンディングワイヤとした。As shown in Table 1 below, each of the obtained wire castings was subjected to diameter reduction drawing and intermediate annealing to a final wire diameter of 25 μm, and the elongation at room temperature was 4 to 6%. The final annealing (continuous annealing) was performed so that Table 1 below shows the wire diameter at the time of each annealing, the area processing rate up to each annealing, the temperature and time or the method of each annealing for each sample of the present invention example and the comparative example. Finally, a polyoxylene alkyl ether equivalent to a monomolecular film thickness was applied to the surface of the wire to obtain a gold bonding wire.
【0029】[0029]
【表1】 [Table 1]
【0030】得られた各試料の金ボンディングワイヤに
ついて、298Kの温度雰囲気での0.2%耐力、同温
度での引張強度と伸び率を測定すると共に、523Kの
温度雰囲気で15〜25秒間加熱した後に引き続き同温
度雰囲気での引張強度(高温強度)を測定し、且つその
公称応力を求め、表2に示した。また、各ボンディング
ワイヤについて、内径30μmのキャピラリーを用いて
ワイヤ間隔60μm、ループ長5mmにて3820本の
ボンディングを行った後、隣接するワイヤ同士のループ
上部の間隔を測定顕微鏡で測定し、その間隔が40μm
以下のワイヤをリーニング不良と判定して、その本数を
下記表2に示した。尚、ワイヤボンダ―には新川社製の
UTC300を用い、ループモードを「SQR」、ルー
プ高さは280μmに設定した。The gold bonding wire of each sample was measured for 0.2% proof stress at a temperature of 298K, tensile strength and elongation at the same temperature, and heated for 15 to 25 seconds at a temperature of 523K. After that, the tensile strength (high-temperature strength) in the same temperature atmosphere was measured, and the nominal stress was obtained. In addition, for each bonding wire, after performing 3820 bonding at a wire interval of 60 μm and a loop length of 5 mm using a capillary having an inner diameter of 30 μm, the interval between adjacent wires at the top of the loop was measured with a measuring microscope, and the interval was measured. Is 40 μm
The following wires were determined to have poor leaning, and the numbers thereof are shown in Table 2 below. The wire bonder used was UTC300 manufactured by Shinkawa Co., Ltd., and the loop mode was set to “SQR” and the loop height was set to 280 μm.
【0031】[0031]
【表2】 [Table 2]
【0032】上記の結果から分るように、ワイヤ鋳造材
から最終焼鈍まで加工する間に、ワイヤの面積加効率が
75〜99.997%の範囲内で1回以上の途中焼鈍を
行った本発明例の試料1〜3のボンディングワイヤで
は、298Kの温度雰囲気で測定される0.2%耐力よ
りも高温強度(523K)が高くなるように調整され、
その公称応力も全て200MPa以上となっていると共
に、リーニング不良本数が少なく、直進性が良好であっ
た。As can be seen from the above results, one or more intermediate annealings were performed at a wire area addition efficiency of 75 to 99.997% during the processing from the wire cast material to the final annealing. In the bonding wires of Samples 1 to 3 of the invention, the high-temperature strength (523K) is adjusted to be higher than the 0.2% proof stress measured in a temperature atmosphere of 298K,
The nominal stresses were all 200 MPa or more, the number of leaning defects was small, and the straightness was good.
【0033】尚、試料2及び3においては、2次再結晶
温度を超えない温度で途中焼鈍を行っており、2次再結
晶温度を超える温度で途中焼鈍を行った試料1よりも若
干高い強度のボンディングワイヤが得られた。また、試
料1〜3の結果が示す通り、面積加工率75〜99.9
97%の範囲内での途中焼鈍は複数回行っても、直進性
向上の効果は低下しない。Incidentally, in Samples 2 and 3, the intermediate annealing was performed at a temperature not exceeding the secondary recrystallization temperature, and the strength was slightly higher than that of Sample 1 subjected to the intermediate annealing at a temperature exceeding the secondary recrystallization temperature. Was obtained. Further, as shown by the results of Samples 1 to 3, the area processing rate was 75 to 99.9.
Even if the intermediate annealing is performed a plurality of times within the range of 97%, the effect of improving straightness does not decrease.
【0034】一方、ワイヤ鋳造材から最終線径まで加工
する間に、途中で焼鈍を全く行わなかった比較例の試料
4及び試料6、ワイヤの面積加工率が99.997%を
超えた時点で最終焼鈍を行った比較例の試料5、及びワ
イヤの面積加工率が99.997%を超えて中間焼鈍を
行うと共に75%未満で最終焼鈍を行った比較例の試料
7では、いずれも0.2%耐力よりも高温強度(523
K)が低く、リーニング不良の本数が100本を超え、
良好な直進性は得られなかった。On the other hand, while working from the wire cast material to the final wire diameter, the samples 4 and 6 of the comparative example, in which no annealing was performed on the way, when the area processing rate of the wire exceeded 99.997%. In Sample 5 of the comparative example where the final annealing was performed, and in Sample 7 of the comparative example where the area annealing rate of the wire exceeded 99.997%, the intermediate annealing was performed and the final annealing was performed at less than 75%. High temperature strength (523% proof strength)
K) is low, and the number of leaning defects exceeds 100,
Good straightness could not be obtained.
【0035】実施例2 純度99.999重量%以上の高純度Auと、所定量の
Be、Ca、Ce、La等の微量成分とを高周波誘導加
熱炉にて溶解し、下記表3に示す組成の合金鋳塊を得
た。これらの合金鋳塊に溝ロール圧延を施し、線径が2
5mmのワイヤ鋳造材を製造した。[0035]Example 2 High purity Au having a purity of 99.999% by weight or more and a predetermined amount of
High frequency induction heating with trace components such as Be, Ca, Ce, La
Melted in a heating furnace to obtain an alloy ingot having the composition shown in Table 3 below
Was. These alloy ingots are subjected to groove roll rolling to have a wire diameter of 2
A 5 mm wire casting was produced.
【0036】得られたワイヤ鋳造材について、最終線径
までの間に後述の焼鈍条件で途中焼鈍を行いつつ順次ダ
イスによる縮径伸線加工を行ない、最終的に直径28μ
mの極細線とした。その後、各極細線に室温での伸び率
が5〜10%となるように最終焼鈍(連続焼鈍)を施
し、ワイヤ表面に実施例1と同様にポリオキシレンアル
キルエーテルを塗布して、金ボンディングワイヤとし
た。The obtained cast wire material was subjected to diameter reduction and drawing by a die while performing intermediate annealing under the annealing conditions described below until the final wire diameter, and finally to a diameter of 28 μm.
m extra fine line. Thereafter, each ultrafine wire is subjected to final annealing (continuous annealing) so that the elongation at room temperature is 5 to 10%, and the surface of the wire is coated with polyoxylen alkyl ether in the same manner as in Example 1, and the gold bonding wire is applied. And
【0037】[0037]
【表3】 [Table 3]
【0038】上記縮径伸線加工の間に行った途中焼鈍の
条件は以下のとおりである。 条件1: 線径が4.0mmの時点(面積加工率9
7.4%)で、焼鈍後のワイヤ表面のビッカース硬度が
焼鈍前の70%となるように、温度390℃で途中焼鈍
(60分)を行う。 条件2: 線径が4.0mmの時点で条件1と同一
の途中焼鈍を行った後、更に線径が0.3mmの時点
(面積加工率99.4%)で、伸び率が10%となるよ
うに温度560℃で途中焼鈍(連続焼鈍)を行う。 条件3: 線径が0.3mmの時点(面積加工率9
9.99%)で、伸び率が5%となるように温度560
℃で途中焼鈍(連続焼鈍)を行う。 条件4: 最終線径まで途中焼鈍は一切行わない。The conditions of the halfway annealing performed during the above-described diameter reduction wire drawing are as follows. Condition 1: When the wire diameter is 4.0 mm (area processing rate 9
(7.4%), the intermediate annealing (60 minutes) at a temperature of 390 ° C. is performed so that the Vickers hardness of the wire surface after annealing becomes 70% of that before annealing. Condition 2: After the same halfway annealing as in Condition 1 when the wire diameter was 4.0 mm, the elongation was 10% when the wire diameter was further 0.3 mm (area reduction ratio 99.4%). Annealing (continuous annealing) is performed at a temperature of 560 ° C. Condition 3: When the wire diameter is 0.3 mm (area processing rate 9
9.99%) at a temperature of 560 such that the elongation is 5%.
Intermediate annealing (continuous annealing) is performed at ℃. Condition 4: No intermediate annealing is performed until the final wire diameter.
【0039】このようにして得られた各試料の金ボンデ
ィングワイヤについて、298Kの温度雰囲気での0.
2%耐力、同温度での引張強度と伸び率を測定すると共
に、523Kの温度雰囲気で15〜25秒間加熱した後
に引き続き同温度雰囲気での引張強度(高温強度)を測
定し、且つその公称応力を求めた。得られた結果を下記
表4に示した。The gold bonding wire of each sample obtained in this manner was used at a temperature of 298 K in an atmosphere of 0.2 mm.
After measuring the tensile strength and elongation at 2% proof stress and the same temperature for 15 to 25 seconds at a temperature of 523 K, the tensile strength (high temperature strength) at the same temperature was measured, and the nominal stress was measured. I asked. The results obtained are shown in Table 4 below.
【0040】[0040]
【表4】 [Table 4]
【0041】上記の結果から分るように、本発明例の試
料8〜10は、298Kの温度雰囲気で測定される0.
2%耐力よりも高温強度(523K)が高くなるように
調整され、その公称応力も全て200MPa以上となっ
ている。一方、比較例の試料11〜14では0.2%耐
力よりも高温強度(523K)が低く、特に途中焼鈍を
行わなかった試料14は引張強度(298K)に比べて
高温強度(523K)が大幅に低下すると共に、公称応
力も200MPa以下となっている。As can be seen from the above results, Samples 8 to 10 of the present invention were measured in an atmosphere at a temperature of 298K.
The high temperature strength (523K) is adjusted to be higher than the 2% proof stress, and the nominal stresses are all 200 MPa or more. On the other hand, the high-temperature strength (523K) of the comparative examples 11 to 14 was lower than the 0.2% proof stress, and the high-temperature strength (523K) of the sample 14 not subjected to the intermediate annealing was significantly higher than the tensile strength (298K). And the nominal stress is also 200 MPa or less.
【0042】次に、上記各試料の金ボンディングワイヤ
を用い、新川社製UTC−300型ワイヤボンダーによ
り、それぞれワイヤ間隔80μm、ループ高さ200μ
m、ループ長5mmで、6240本を平行にワイヤボン
ディングした。測定顕微鏡を用いてループに平行な方向
から観察し、ループ上部間のギャップが35μm以下と
なるまで左右に傾斜したワイヤをリーニング不良と判定
して、その本数を測定した。また、ループに直角な方向
から観察して、ネック倒れ不良の本数を測定した。この
ようにして得られたリーニング不良とネック倒れ不良の
各本数、並びにこれらの合計不良率を下記表5に示し
た。Next, using the gold bonding wire of each of the above samples, a wire gap of 80 μm and a loop height of 200 μm were respectively formed by a UTC-300 type wire bonder manufactured by Shinkawa Corporation.
m, a loop length of 5 mm, and 6240 wires were wire-bonded in parallel. Observation was made from a direction parallel to the loop using a measuring microscope, and a wire inclined left and right until the gap between the upper portions of the loop became 35 μm or less was determined to be poor in leaning, and the number thereof was measured. Observation was made from a direction perpendicular to the loop, and the number of neck falling defects was measured. Table 5 below shows the numbers of the thus obtained leaning defects and neck falling defects, and the total defect rates thereof.
【0043】更に、上記のごとくループ高さ200μm
且つループ長5mmでボンディングした各試料の金ボン
ディングワイヤについて、ループに垂直に一般的な条件
で樹脂モールドを行なった後、ワイヤ流れ率を測定し
た。ワイヤ流れ率は、樹脂に流されて湾曲したループに
ついて、モールド前の位置から変位した最大距離をルー
プ長で徐した値を求め、5点の平均値をパーセントで示
した。求めたワイヤ流れ率を表5に併せて示した。Further, as described above, the loop height is 200 μm.
In addition, the gold bonding wire of each sample bonded with a loop length of 5 mm was subjected to resin molding under general conditions perpendicular to the loop, and then the wire flow rate was measured. The wire flow rate was obtained by calculating the value obtained by reducing the maximum distance displaced from the position before the mold by the loop length with respect to the curved loop caused to flow through the resin, and the average value of the five points was shown as a percentage. The determined wire flow rates are also shown in Table 5.
【0044】[0044]
【表5】 [Table 5]
【0045】以上の結果から、本発明例の試料8〜10
の金ボンディングワイヤは、0.2%耐力(298K)
よりも高温強度(523K)が高く且つ200MPaを
越える高い公称応力(523K)を有し、従来品である
比較例の試料11に比べてリーニング不良が10分の1
未満に激減していることが分る。また、試料14のよう
に従来のリーニング不良が少ないワイヤで見られたネッ
ク倒れ不良の発生も、本発明例の試料8〜10では解消
されるうえ、ワイヤ流れ率は一般的に良好とされる3%
以下に収まっている。From the above results, Samples 8 to 10 of the present invention were obtained.
Gold bonding wire is 0.2% proof stress (298K)
High-temperature strength (523K) and a high nominal stress (523K) exceeding 200 MPa, and one-tenth of the leaning failure is lower than that of the comparative sample 11 which is a conventional product.
It can be seen that it has decreased sharply to below. In addition, the occurrence of neck collapse failure observed with a conventional wire having a small number of leaning defects as in sample 14 is eliminated in samples 8 to 10 of the present invention, and the wire flow rate is generally considered to be good. 3%
It fits below.
【0046】[0046]
【発明の効果】本発明によれば、直進性に優れていてリ
ーニング不良を抑制でき、同時にワイヤ流れが少なく、
ネック倒れ不良の発生を防止することのできる、引張強
度に優れたボンディングワイヤ及びその製造方法を提供
することができる。According to the present invention, excellent straightness can be suppressed, and leaning defects can be suppressed.
It is possible to provide a bonding wire excellent in tensile strength and a method for manufacturing the same, which can prevent the occurrence of neck collapse failure.
【0047】また、リーニング不良が起こり難いボンデ
ィングワイヤを評価管理する際に、従来のごとくわざわ
ざワイヤボンディングした後のボール直上部の引張強度
を測定する必要がなくなり、ワイヤボンディング前のボ
ンディングワイヤから簡単に測定できる高温強度を基準
として、簡単に評価管理することができる。Further, when evaluating and managing a bonding wire in which a leaning failure is unlikely to occur, it is not necessary to measure the tensile strength immediately above the ball after wire bonding as in the related art, so that the bonding wire before wire bonding can be easily measured. The evaluation and management can be easily performed based on the measurable high-temperature strength.
【0048】従って、半導体素子の高集積化並びにパッ
ケージの小型縮小化に対応し、100μm以下の狭いボ
ンディングピッチであっても、ワイヤボンディング工程
及び樹脂モールド工程における不良を低減させ、半導体
素子の組立工程における製品の歩留及び信頼性の向上を
達成することができる。Therefore, in response to the high integration of the semiconductor element and the miniaturization of the package, the defect in the wire bonding step and the resin molding step can be reduced even if the bonding pitch is as narrow as 100 μm or less. In this case, the yield and reliability of the product can be improved.
【図1】線径25μmのボンディングワイヤにおけるボ
ール直上部引張強度と高温強度との関係を示すグラフで
ある。FIG. 1 is a graph showing the relationship between tensile strength immediately above a ball and high-temperature strength in a bonding wire having a wire diameter of 25 μm.
【図2】ボンディングワイヤのリーニング不良の状態を
模式的に示す側面図である。FIG. 2 is a side view schematically showing a state of a bonding wire having a leaning defect.
【図3】ボンディングワイヤのネック倒れ不良の状態を
模式的に示す側面図である。FIG. 3 is a side view schematically showing a state in which a neck of a bonding wire is poorly collapsed.
1 ボンディングワイヤ 1a、1b ループ上部 1c 外側ワイヤ 1d 内側ワイヤ 2 ボール 3 ボール直上部 4 半導体素子 5 リードフレーム DESCRIPTION OF SYMBOLS 1 Bonding wire 1a, 1b Upper part of loop 1c Outer wire 1d Inner wire 2 Ball 3 Upper part of ball 4 Semiconductor element 5 Lead frame
───────────────────────────────────────────────────── フロントページの続き (72)発明者 村瀬 栄治 東京都青梅市末広町1−6−1 住友金属 鉱山株式会社電子事業本部内 Fターム(参考) 5F044 FF04 FF10 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Eiji Murase Inventor 1-6-1 Suehirocho, Ome-shi, Tokyo Sumitomo Metal Mining Co., Ltd. F-term (reference) 5F044 FF04 FF10
Claims (5)
間加熱した後に引き続き前記温度雰囲気で測定した引張
強度が、298Kの温度雰囲気にて測定した0.2%耐
力よりも高いことを特徴とするボンディングワイヤ。1. The method according to claim 1, wherein after heating in a temperature atmosphere of 523K for 15 to 25 seconds, a tensile strength measured in the temperature atmosphere is higher than a 0.2% proof stress measured in a temperature atmosphere of 298K. Bonding wire.
間加熱した後に引き続き前記温度雰囲気で測定した引張
強度が、公称応力で200MPa以上であることを特徴
とする、請求項1に記載のボンディングワイヤ。2. The bonding wire according to claim 1, wherein a tensile strength measured at a temperature of 523 K for 15 to 25 seconds and subsequently measured at the temperature of the atmosphere is 200 MPa or more at a nominal stress. .
ことを特徴とする、請求項1又は2に記載のボンディン
グワイヤ。3. The bonding wire according to claim 1, wherein the bonding wire is mainly composed of gold.
した後に最終焼鈍するボンディングワイヤの製造方法に
おいて、縮径伸線工程の途中に少なくもと1回の途中焼
鈍を行うと共に、ワイヤ鋳造材から最初の途中焼鈍ま
で、途中焼鈍から次の途中焼鈍まで、及び最後の途中焼
鈍から最終焼鈍までの各縮径伸線におけるワイヤの面積
加工率を75〜99.997%とすることを特徴とする
ボンディングワイヤの製造方法。4. A method for producing a bonding wire in which a wire cast material is reduced in diameter to a predetermined wire diameter and then finally annealed, wherein at least one intermediate annealing is performed during the diameter reducing and drawing step. The area reduction rate of the wire from 75% to 99.997% in the wire diameter reduction from the wire casting material to the first intermediate annealing, from the intermediate annealing to the next intermediate annealing, and from the last intermediate annealing to the final annealing The manufacturing method of the bonding wire characterized by the above-mentioned.
1次再結晶温度以上であって2次再結晶温度を超えない
温度であることを特徴とする、請求項4に記載のボンデ
ィングワイヤの製造方法。5. The bonding wire according to claim 4, wherein the temperature of the intermediate annealing is a temperature not lower than the primary recrystallization temperature of the wire casting material and not exceeding the secondary recrystallization temperature. Manufacturing method.
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| JP2001-41573 | 2001-02-19 | ||
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| JP2006203164A (en) * | 2004-12-21 | 2006-08-03 | Mitsubishi Materials Corp | Metal alloy wire for bonding wire having excellent bonding properties, linearity, and resin flow resistance properties |
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| US7390370B2 (en) | 2002-04-05 | 2008-06-24 | Nippon Steel Corporation | Gold bonding wires for semiconductor devices and method of producing the wires |
| WO2004049425A1 (en) * | 2002-11-27 | 2004-06-10 | Nippon Steel Corporation | Gold alloy bonding wire for semiconductor device and process for producing the same |
| CN100352026C (en) * | 2002-11-27 | 2007-11-28 | 新日本制铁株式会社 | Gold alloy bonding wire for semiconductor device and process for producing the same |
| JP2006203164A (en) * | 2004-12-21 | 2006-08-03 | Mitsubishi Materials Corp | Metal alloy wire for bonding wire having excellent bonding properties, linearity, and resin flow resistance properties |
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