JP2002329661A - Substrate processing device and method therefor, and method for manufacturing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance a degree of freedom in a location structure of a device by intending to make a block configuration of the device of minimum unit, enhance a downsizing of the entire device without accompanying a problem in a device configuration, and reduce a foot-print of the entire device. SOLUTION: There are provided process part locations 21 to 23 structured so that a plurality of process parts for making a predetermined process with respect to a processing substrate G are located in one direction; a first carrying structure for carrying the processing substrate provided within the process part locations; and second carrying structures 11 to 15 provided fixedly outside the process part locations and in a substantially extension line of the one side, or fixedly in a direction perpendicular to the substantially extension line of the one direction, or/and movably in a line in parallel with the extension line in the one direction, and structured so as to transfer the processing substrate directly or indirectly to the first carrying structure.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to processing a substrate to be processed, for example, a semiconductor wafer or a substrate to be processed such as a glass substrate used for a liquid crystal display (LCD), for example, processing with a processing liquid, for example, a resist liquid. A process of applying an organic solvent such as SOG or an inorganic agent such as SOG, a process of a developing solution after exposure, a process of supplying a cleaning solution to perform a process such as a process, or a process of performing a heat process on a substrate to be processed. The present invention relates to a substrate processing apparatus and a substrate processing method.

[0002]

2. Description of the Related Art A substrate to be processed, for example, a liquid crystal display (LC)
In the main process of manufacturing a substrate such as a glass substrate or a semiconductor wafer used in D), as a first step, a cleaning processing member such as a brush is supplied to a substrate while supplying a cleaning liquid, for example, a chemical solution or pure water. Is brought into contact with the substrate to perform a washing step (washing step), and the substrate is moved, for example, rotationally moved, once shaken dry, subjected to a heat treatment at a predetermined temperature, and subjected to a dehydration step (drying step). ,
Predetermined gas treatment for hydrophobizing the substrate, etc.
For example, a step of performing HMDS processing at a predetermined temperature or performing processing such as ultraviolet irradiation (UV irradiation) on the substrate (hydrophobizing step), and then subjecting the substrate to the hydrophobicized substrate under a predetermined atmosphere. A predetermined film, for example, a photoresist film is applied by a moving motion such as rotational movement (coating process), and a predetermined energy, for example, a predetermined temperature is applied to the photoresist film applied to the substrate at a predetermined temperature. The film is cured to a predetermined hardness by applying energy such as heating energy and / or energy such as EB irradiation (curing step), and the photoresist film is exposed corresponding to a predetermined circuit pattern (exposure step). A method of forming a circuit pattern by a so-called photolithography technique in which a developing solution is supplied to a substrate and developed (developing step). Production of the plate is being carried out.

Conventionally, as a system for manufacturing such a substrate, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2-144333, a transfer mechanism provided on a common linear transfer path is used. A processing system configured to arrange a plurality of processing units for processing a substrate on both sides of a shape-like transport path and to transport the substrate to the plurality of processing units by a transport mechanism provided in a linear transport path. Is being done.

[0004]

However, in recent industrial developments, substrates to be processed, for example, semiconductor wafers, having a size as large as 300 mm, are becoming the mainstream in the future and will continue to grow in the future. .
In addition, needs for large displays are accelerating for LCD substrates, and the size of LCD substrates is increasing. At present, such LCD substrates have appeared as large as 1 m on each side, and the processing systems for processing those substrates are naturally increasing in size. Such an increase in the size of the processing system seriously affects investment in facilities such as a clean room in which the processing system is arranged. In other words, this is because the footprint of the processing system becomes extremely large.

In addition, the size of the processing system is increased because the transport mechanism for transporting the substrate to be processed in the processing system cannot be increased to a predetermined transport speed or higher due to a problem such as chipping. And seriously affect the throughput of substrate processing. Further, since the transfer time between the processing units or the like is reduced or it takes more than a predetermined time, after processing in the predetermined processing unit,
When it is necessary to convey to the processing unit that performs the next process in a predetermined time, the time cannot be achieved, and the processing process cannot achieve the target specification or promotes a decrease in yield. Will occur.

[0006] In addition, a processing unit for processing a substrate to be processed is made into one unit, and a plurality of such units are combined to form a system. This is because the system can be flexibly constructed with a certain degree of substrate size. However, when the size of the substrate exceeds a predetermined value, the physical distance between one processing unit increases, so that the transport time between the processing units decreases, and the throughput of the substrate processing is seriously affected. Has a significant effect.

As one solution to such an increase in the size of the processing system, for example, stacking a plurality of processing units in the vertical direction to reduce the footprint can be considered. However, the increase in the size of the substrate to be processed is not limited to the increase in the footprint of the processing system.
In order to achieve processing uniformity of the substrate to be processed, the size in the height direction is also increased. In a facility such as a clean room in which a processing system is installed, for example, a downflow atmosphere is formed, and the height of the facility is limited. For this reason, it is extremely difficult to stack a plurality of processing units in the vertical direction as compared with the related art.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is an object of the present invention to improve the yield rate in substrate processing, to improve the throughput of substrate processing or to suppress a decrease in the current throughput, and to configure the minimum unit of the apparatus. And a substrate processing apparatus capable of improving the degree of freedom in the arrangement configuration of the apparatus, improving the miniaturization of the entire apparatus and reducing the footprint of the entire apparatus without problems in the apparatus configuration. It aims to provide a method.

[0009]

In order to solve the above-mentioned problems, the present invention firstly provides a processing apparatus in which a plurality of processing units for performing a predetermined processing on a substrate to be processed are arranged in one direction. A unit disposition unit, a first transfer mechanism provided in the processing unit disposition unit for conveying the substrate to be processed, and fixed outside or substantially on an extension of the one direction in the one direction or outside the processing unit disposition unit. The substrate to be processed is fixed in a direction substantially perpendicular to the extension line and / or movably provided on a line parallel to the extension line in the one direction, directly or indirectly with respect to the first transport mechanism. The second, which is configured to be freely transferable
And a transfer mechanism.

[0010] Second, the present invention comprises a plurality of processing units for performing a predetermined process on a substrate to be processed in one direction, and the substrate to be transported substantially only in the one direction.
And a heat treatment unit provided above the processing unit placement unit for heating the substrate to be processed and / or the substrate to be provided above the processing unit placement unit. An ultraviolet energy processing unit that irradiates ultraviolet rays to the substrate and / or an electromagnetic energy processing unit that is provided above the processing unit disposition unit and irradiates electromagnetic energy to the substrate to be processed and / or above the processing unit disposition unit. A substrate processing apparatus, comprising: an inspection processing unit provided to perform a predetermined inspection on a substrate to be processed processed by the processing unit arrangement unit.

The present invention provides, in a third aspect, a processing section having a plurality of processing sections for performing a predetermined process on a substrate to be processed in one direction and having a first transport mechanism for horizontally transporting the substrate to be processed. Arranging part, and the processing target substrate provided outside the processing part arranging part and processed by the processing part arranging part is disposed above the horizontal transfer position of the processing target substrate transferred by the first transfer mechanism. And a second transport mechanism for transporting the substrate to the provided processing unit.

Fourthly, the present invention includes a first transport mechanism for arranging a plurality of processing units including a processing unit for performing at least liquid processing on a substrate to be processed and transporting the substrate to be processed. A processing unit arranging unit, and a processing unit provided outside the processing unit arranging unit and above the transport position of the substrate to be transported by the first transport mechanism and performing a heat treatment on the substrate to be processed and / or the processing An ultraviolet processing unit provided above the unit arrangement unit and irradiating ultraviolet rays to the substrate to be processed and / or an electromagnetic energy process provided above the processing unit arrangement unit and irradiating the substrate substrate with electromagnetic energy And / or an inspection processing unit which is provided above the processing unit arrangement unit and performs a predetermined inspection on the substrate to be processed processed by the processing unit arrangement unit. Equipment Subjected to.

Fifthly, the present invention is configured such that the substrate to be processed can be carried in and out of the processing unit disposition section from a direction substantially perpendicular to the carrying direction of the first carrying mechanism. And / or a fourth transport mechanism configured to be capable of loading and unloading the substrate to be processed into and out of the processing unit disposition portion from substantially the same direction as the transport direction of the first transport mechanism. A substrate processing apparatus is provided.

Sixth, the present invention provides a first processing unit arrangement including a plurality of processing units for performing predetermined processing on a substrate to be processed in one direction and a transport mechanism for transporting the substrate to be processed. And a second processing unit arranging unit including a plurality of processing units for performing predetermined processing on the substrate to be processed in one direction and a transport mechanism for transporting the substrate to be processed, and a second processing unit A substrate to be processed is provided substantially between the unit arrangement unit and the first processing unit arrangement unit, and the substrate to be processed can be carried in and out of the first processing unit arrangement unit and the second processing unit arrangement unit. And a second transfer mechanism.

Seventh, the present invention provides a first processing unit arrangement including a plurality of processing units for performing predetermined processing on a substrate to be processed in one direction and a transport mechanism for transporting the substrate to be processed. And a second processing unit arranging unit including a plurality of processing units for performing predetermined processing on the substrate to be processed in one direction and a transport mechanism for transporting the substrate to be processed, and a second processing unit A plurality of units which are separately provided for the unit arrangement unit and the first processing unit arrangement unit, and which are configured to be able to carry in and out a substrate to be processed to the first processing unit arrangement unit or the second processing unit arrangement unit. A second transport mechanism, and a plurality of second transport mechanisms and a substrate transport mechanism configured to be able to transfer the substrate to be processed and to transport the substrate to a predetermined position. A substrate processing apparatus characterized by the following.

Eighthly, the present invention provides a heat treatment apparatus, wherein the heat treatment is performed on a substrate to be processed, which is provided above a position where the substrate to be processed is transported by each of the transport mechanisms of the first processing unit and the second processing unit. A UV treatment unit provided above the heat treatment unit or / and the treatment unit disposition unit for irradiating ultraviolet rays to the substrate to be treated and / or provided above the treatment unit disposition unit. An electromagnetic energy processing unit that irradiates electromagnetic energy to the processing unit and / or an inspection processing unit that is provided above the processing unit arrangement unit and performs a predetermined inspection on a substrate to be processed that has been processed by the processing unit arrangement unit. The second transport mechanism is provided in the heat treatment unit or / and the ultraviolet treatment unit or / and the electromagnetic energy treatment unit or / and the inspection treatment unit, the first treatment unit arrangement unit or / and the second treatment To provide a substrate processing apparatus according to claim in which the substrate to be processed is processed by the arrangement unit is configured to freely transport.

Ninthly, the present invention provides a processing apparatus in which the first processing unit arranging unit and the second processing unit arranging unit are moved from a direction substantially perpendicular to the conveying direction of each conveying mechanism. On the other hand, there is provided a substrate processing apparatus comprising a third transfer mechanism configured to be capable of carrying in and out the substrate to be processed.

According to a tenth aspect of the present invention, there is provided a first processing unit arrangement including a plurality of processing units for performing a predetermined process on a substrate to be processed in one direction and a transport mechanism for transporting the substrate to be processed. A processing unit for performing a predetermined process on the substrate to be processed, a second processing unit arranging unit including a transport mechanism for transporting the substrate to be processed, and a second processing unit;
And a second transport mechanism respectively provided outside the first processing unit arranging unit and the first processing unit arranging unit, and provided between the first processing unit arranging unit and the second processing unit arranging unit. A third transfer configured to be able to directly or indirectly transfer a substrate to be processed to the first processing unit arrangement unit and the second processing unit arrangement unit or / and to the second transfer mechanism. And a mechanism for providing a substrate processing apparatus.

Eleventh, the present invention provides an eleventh aspect of the present invention, wherein a heat treatment is performed on a substrate to be processed which is provided above a position at which the substrate to be processed is transported by a transport mechanism of each of the first processing part arranging part and the second processing part arranging part. A UV treatment unit provided above the heat treatment unit or / and the treatment unit disposition unit for irradiating ultraviolet rays to the substrate to be treated and / or provided above the treatment unit disposition unit. An electromagnetic energy processing unit that irradiates electromagnetic energy to the processing unit and / or an inspection processing unit that is provided above the processing unit arrangement unit and performs a predetermined inspection on a substrate to be processed that has been processed by the processing unit arrangement unit. The second transport mechanism is provided in the heat treatment section or / and the ultraviolet ray treatment section or / and the electromagnetic energy treatment section or / and the inspection treatment section, and the first treatment section arrangement section //
And a substrate processing apparatus characterized in that the substrate to be processed processed by the second processing section arrangement section is configured to be able to be transported.

Twelfth, the present invention provides at least one fixed processing unit for performing a predetermined process on a substrate to be processed, a predetermined process for the substrate to be processed, and a process for the processing unit. A processing unit arrangement unit having a movement processing unit configured to be capable of transporting a processing substrate, and a substrate to be processed being directly or indirectly provided to a movement processing unit provided outside the processing unit arrangement unit and in the processing unit arrangement unit A second transport mechanism that is configured to be able to be freely loaded and unloaded, and an atmosphere shutoff mechanism that substantially shuts off the atmosphere in the processing unit arrangement and the atmosphere in the processing unit arrangement. Provided is a substrate processing apparatus.

The thirteenth aspect of the present invention is that at least one fixed processing section for performing a predetermined processing on a substrate to be processed, a predetermined processing for the substrate to be processed, and a processing for the processing section. A plurality of processing unit arrangement units each having a movement processing unit configured to be capable of transporting a processing substrate, and a substrate to be processed is directly or indirectly loaded and unloaded to and from a movement processing unit in the plurality of processing unit arrangement units. And a second transfer mechanism configured as described above.

Fourteenth, the present invention provides, at least, a fixed processing section for performing a predetermined processing on a substrate to be processed, a predetermined processing for the substrate to be processed, and a processing for the processing section. A processing unit arrangement unit having a movement processing unit configured to be capable of transporting the processing substrate, and a processing unit arrangement unit provided outside the processing unit arrangement unit and having the same movement direction with respect to the processing unit arrangement unit in the transport direction of the movement processing unit. A second transfer mechanism configured to be capable of loading and unloading a substrate to be processed from a direction or a direction substantially perpendicular to the substrate processing apparatus.

In the fifteenth aspect of the present invention, when the movement processing unit is at the standby position, the movement processing unit moves from the movement processing unit side to the processing unit or from the processing unit side while the movement processing unit is at the standby position. A substrate processing apparatus further comprising a gas supply mechanism for supplying a predetermined gas to a substrate to be processed held by the moving processing unit in a processing unit direction and / or at least in a state where the moving processing unit is at the standby position. Provide equipment.

Sixteenth, the present invention relates to a sixteenth aspect of the present invention, wherein the atmospheric pressure in the processing section is set to a pressure substantially higher than the atmospheric pressure outside the processing section, and / or the oxygen concentration in the processing section is changed. The oxygen concentration in a predetermined area in the processing unit arrangement unit or at least one of the plurality of processing units in the processing unit arrangement unit is set to be substantially lower than the oxygen concentration outside the processing unit arrangement unit and / or the processing is performed. The ambient temperature inside the processing unit is set to be substantially higher than the ambient temperature outside the processing unit, and / or the atmospheric humidity inside the processing unit is set substantially lower than the atmospheric humidity outside the processing unit. The present invention provides a substrate processing apparatus characterized in that:

In the seventeenth aspect of the present invention, the substrate processing apparatus further comprises an atmosphere shutoff mechanism for shutting off an atmosphere between the moving processing unit and the processing unit when the moving processing unit is at the standby position. Provide equipment.

Eighteenthly, the present invention provides, in an eighteenth aspect, a step of substantially horizontally moving a substrate to be processed and processing the processed substrate by a plurality of processing units; Transporting and processing the substrate to be processed to a processing unit disposed in an atmosphere that does not substantially interfere with the arrangement atmosphere of the processing unit.

In the nineteenth aspect of the present invention, a plurality of processing units including a processing unit that substantially horizontally moves the substrate to be processed and performs a liquid process on at least the substrate to be processed; A processing unit that heats the substrate to be processed and / or a processing unit that irradiates the processing substrate with ultraviolet light and is disposed in a position above the unit and in an atmosphere that does not substantially interfere with the arrangement atmosphere of the plurality of processing units. And / or carrying and processing the substrate to be processed to a processing unit for irradiating the substrate with electromagnetic energy or / and a processing unit for performing a predetermined inspection on the substrate to be processed. To provide a substrate processing method.

Twentiethly, the present invention provides a process for transporting at least a plurality of processing units including a processing unit for performing liquid processing on a substrate to be processed, and a step of processing the substrate at a position above the plurality of processing units. A process of transporting and processing the substrate to be processed to a heat processing unit that is disposed and heat-processes the substrate to be processed; and a process that is heated at a position above the plurality of processing units and below the heat processing unit. Transporting and processing the substrate to a temperature control processing unit that performs a process of setting the substrate to be substantially the same as the temperature of the substrate during the liquid processing. A substrate processing method is provided.

In the twenty-first aspect of the present invention, a step of processing a substrate to be processed at a first temperature in a first processing unit in a stationary state at a first temperature, and moving the substrate to be processed in the first processing unit Causing the substrate to move while maintaining the first temperature;
Processing the substrate to be processed in a second processing unit that heats the substrate at a second temperature higher than a first temperature; and setting the substrate to be processed to a first temperature in the first processing unit. Processing or processing the substrate to be processed by setting the substrate to a first temperature in the first processing unit and supplying a predetermined gas to the substrate to be processed. Provide a processing method.

According to a twenty-second aspect of the present invention, a substrate to be processed is received from a space set in a first atmosphere, and the substrate is set to a first temperature in a first processing unit in a second atmosphere. And moving the substrate to be processed in a second atmosphere while maintaining the first temperature by moving a first processing unit; and performing the processing in a third atmosphere. A second heat treatment of the substrate at a second temperature higher than the first temperature;
Treating the substrate to be processed in the first processing unit in a second atmosphere, and carrying out the substrate to a space set in the first atmosphere. ,
The present invention provides a substrate processing method characterized by comprising:

In the twenty-third aspect of the present invention, in the setting of the first atmosphere, the second atmosphere, and the third atmosphere, the pressure is substantially equal to the pressure of the first atmosphere <the pressure of the second atmosphere. Or /
And the pressure of the second atmosphere <the pressure of the third atmosphere or /
And the oxygen concentration of the first atmosphere> the oxygen concentration of the second atmosphere or / and the oxygen concentration of the second atmosphere> the oxygen concentration or / and the temperature of the third atmosphere are substantially: The temperature of the first atmosphere <the temperature of the second atmosphere or / and the temperature of the second atmosphere <the temperature or / and / or humidity of the third atmosphere is substantially the humidity of the first atmosphere> the humidity of the second atmosphere Provided is a substrate processing method, wherein the humidity and / or the humidity of the second atmosphere are set to be higher than the humidity of the third atmosphere.

In the present invention, twenty-fourth, the substrate to be processed is
A step of setting the temperature to a predetermined temperature of not more than 100 ° C .; a step of setting the oxygen concentration of the atmosphere around the substrate to be processed to 100 ppm or less;
Setting the substrate to be processed at a predetermined temperature of 200 ° C. or higher while maintaining the substrate at a predetermined temperature of room temperature or higher, and irradiating the substrate with electromagnetic energy and performing heat treatment while maintaining the temperature at or below. A substrate processing method is provided.

According to the twenty-fifth aspect of the present invention, there are provided a plurality of processing units including a processing unit for substantially horizontally moving a substrate to be processed and performing a liquid process on at least the substrate to be processed, and a processing unit above the plurality of processing units. And a processing unit configured to perform a heat treatment on the substrate to be processed, the processing unit being disposed in an atmosphere that does not substantially interfere with the arrangement atmosphere of the plurality of processing units. Provide equipment.

The present invention provides, in a twenty-sixth aspect, a processing unit arrangement unit including a plurality of processing units including at least a processing unit for performing liquid processing on a substrate to be processed, and a transport mechanism for transporting the plurality of processing units. And a heating processing unit disposed above the transfer height position of the substrate to be processed by the transfer mechanism and performing a heat treatment on the substrate to be processed. The heated substrate to be processed, which is arranged at a position above the transfer height position of the substrate to be processed and below the heat treatment unit, is set to a temperature substantially equal to the temperature of the substrate during the liquid processing. A substrate processing apparatus, comprising: a temperature control processing unit that performs processing.

According to the present invention, twenty-seventh, the substrate to be processed is
A process of setting the temperature to a predetermined temperature of not more than 100 ° C., a process of setting the oxygen concentration of the ambient atmosphere of the substrate to be processed to 100 ppm or less, and maintaining the oxygen concentration of the ambient atmosphere of the substrate to be processed to 100 ppm or less. 200 substrates to be processed
And heating the substrate to be processed at a predetermined temperature of not less than room temperature and setting the temperature of the substrate to be processed to a predetermined temperature of room temperature or higher, and irradiating the substrate with electromagnetic energy and heating the substrate. A method for manufacturing a substrate is provided.

According to the present invention, the arrangement and arrangement of the apparatus can be improved by improving the yield rate in the processing of the substrate, improving the throughput of the processing of the substrate or suppressing the decrease in the current throughput, and configuring the apparatus in the minimum unit. Therefore, it is possible to improve the degree of freedom, to improve the miniaturization of the entire apparatus without causing a problem in the apparatus configuration, and to reduce the footprint of the entire apparatus.

[0037]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing a substrate processing apparatus according to a first embodiment of the present invention, for example, a resist coating and developing processing apparatus for performing a resist process on a glass substrate for an LCD, and FIGS. 4 is a side view showing the inside of the main part of the apparatus, FIG. 4 is a plan view showing the main part of the apparatus, and FIG. 5 is a side view showing the main part of the apparatus.

The resist coating / developing apparatus 1 includes a plurality of substrates to be processed, for example, a glass substrate G for LCD, which is configured to be capable of accommodating a plurality of glass substrates G, for example, at least one cassette C and a plurality of cassettes. Is a cassette disposition portion 2 configured to be freely mounted along a predetermined direction, and a glass substrate G is loaded or unloaded from the cassette C of the cassette disposition portion 2 and the mounting direction of the plurality of cassettes C is determined. A cassette station section 90 including at least a transport mechanism disposition section 5 for disposing a transport mechanism 11 configured to be free to travel in a parallel predetermined direction Y1; and a predetermined process on the glass substrate G, for example, a process on the glass substrate G. A cleaning processing unit 21 for performing a cleaning process on the glass substrate G; A predetermined processing solution, for example, a developing processing unit 23 for supplying a developing solution to the glass substrate G on which the film is formed, and at least one processing arrangement unit such as a developing processing unit, and between each processing unit. Transport mechanisms 12, 13 and 14, each of which is configured to be capable of transporting the glass substrate G freely and which is not allowed to move on its own;
The glass substrate G is transferred from at least one of the transfer mechanisms 3 and 14 or the transfer mechanism 11 of the cassette station section 90.
In a predetermined direction Y substantially orthogonal to the self-running direction Y1 of the transport mechanism 11 of the cassette station section 90.
A transfer mechanism arrangement section 6 for arranging a substrate transfer mechanism 16 as a transfer mechanism that is configured to be able to freely move on the transfer station 2;
The transfer mechanism 15 is configured so as to be able to directly or indirectly transfer the glass substrate G directly or indirectly to the transfer mechanism 13 and is configured to be able to move in a predetermined direction Y3 substantially orthogonal to the self-running direction Y2 of the transfer mechanism 15 of the processing station unit 91. And the glass substrate G can be transferred directly or indirectly from the transport mechanism 15 to another device, for example, an exposure device 10 that exposes a predetermined circuit pattern to a resist film formed on the glass substrate G. The main part is constituted by the interface station section 92 as the transport mechanism arrangement section 7.

Next, the configuration of the cleaning processing unit 21 which is one of the processing arrangement units in the processing station unit 91 will be described with reference to FIG. The cleaning processing unit 21 performs predetermined processing,
For example, it is configured by a plurality of processing units including a processing unit that performs liquid-based processing. That is, one of the processing units
As a predetermined liquid treatment for the glass substrate G, the glass substrate G
The cleaning liquid is supplied to the glass substrate G from a cleaning liquid nozzle 31 as a cleaning liquid supply mechanism for supplying the cleaning liquid to the glass substrate G, and a cleaning brush 32 that is rotatable with respect to the glass substrate G is brought into contact with the glass substrate G. A cleaning unit 30 configured to remove dust and the like as undesired substances adhered to the glass substrate G as one of the other processing units.
The cleaning liquid adhering to the surface of the glass substrate G is rotatably shaken and dried by a rotating centrifugal force by a chuck 36 serving as a holding mechanism configured to be rotatable and vertically movable while holding and sucking the vacuum. A drying promotion section 35 whose main part is constituted by a shower head 37 as a gas supply mechanism for supplying a drying gas from a plurality of holes to the glass substrate G on the chuck 36 to promote the drying; The glass substrate G can be transported between the accelerating unit 35 and the cleaning unit 30 (in one direction, that is, in the direction from the cleaning unit 30 to the drying accelerating unit 35 that performs the next processing step, and is substantially parallel to the self-propelled direction Y2 of the transport mechanism 15). Transport mechanism 11 and transport mechanism 12 of the cassette station section 90.
A roller transport mechanism 38 as a transport mechanism configured to be able to directly or indirectly deliver the glass substrate G through a general entrance / exit 39 and to be able to transport the glass substrate G by point or surface contact; The main part is constituted by.

Although the chuck 36 serving as a holding mechanism has been described for holding the glass substrate G by vacuum suction, a mechanical chuck for supporting the back surface or side surface of the glass substrate G may be used. The transfer may be performed directly from the transfer mechanism 11 and the transfer mechanism 12 to the roller transfer mechanism 38, but as one method of performing the transfer indirectly, the back surface of the glass substrate G is temporarily positioned above the roller transfer mechanism 38. Alternatively, a method may be considered in which a plurality of support pins are used as a support mechanism (not shown) for supporting the side surface and the like, and the plurality of pins are simultaneously lowered to transfer the glass substrate G to the roller portion of the roller transport mechanism 38. Can be This is because, for example, when the plurality of roller units of the roller transport mechanism 38 are not independently rotated, when the plurality of glass substrates G are present in the cleaning processing unit 21, the plurality of roller units are rotated. At the same time, they may move during the processing at the same time, or there may be a transport error when directly transferring from the transport mechanism 11 and the transport mechanism 12 during such movement,
This is because if the rotation of the plurality of roller units is stopped, the transport time may affect the processing throughput. Therefore, the support mechanism may be provided as a standby mechanism for temporarily holding the glass substrate G, or may be provided in an intermediate section of the roller transport mechanism 38. When the plurality of roller portions of the roller transport mechanism 38 are independently rotated, the above-described problem is unlikely to have a significant effect, particularly.

Next, the structure of the transport mechanism 11 of the cassette station section 90 will be described. In the transport mechanism 11, as described above, the base 40 itself has a predetermined direction parallel to the mounting direction of the plurality of cassettes C. The transfer mechanism 11 is configured to freely move, and the transfer mechanism 11 includes a plurality of stacked arms 41 as a holding mechanism that holds or supports the glass substrate G. Each of these arms 41 is configured to be freely expandable and contractible (X1 direction) independently, and the base 40 of these arms 41 collectively moves a plurality of arms 41 in the vertical direction (Z1 direction) and the rotation direction (Z1 direction). (direction θ1).

Next, on the upper side of the cleaning section 21, that is, on one side of the upper part, unnecessary substances adhered to the surface of the glass substrate G,
For example, an ultraviolet processing unit 24 for irradiating ultraviolet rays, for example, excimer UV or the like, to remove organic substances is disposed. On the other side above the cleaning processing unit 21, a predetermined heat is applied to the glass substrate G. A first thermal processing unit 25 for processing is disposed. A thermal processing unit 25, an adhesion processing unit 26 for performing a hydrophobic treatment on the glass substrate G, a heating processing unit 28 including a dehydration baking unit 27 for performing dehydration baking on the glass substrate G,
A temperature control processing unit 29 for setting the temperature of the glass substrate G processed by a predetermined processing unit of the heat processing unit 28 to a temperature at the time of processing in the next process is disposed in a stacked manner.

In the thermal processing section 25, the temperature control processing section 29 is disposed at a portion closest to the cleaning processing section 21 and the heating processing section 28 is disposed above the temperature control processing section 29.
The temperature at the time of processing the glass substrate G set in 9 in the next process is lower than the temperature of the processing unit in the heat processing unit 28, for example, approximately room temperature, so that the heat of the heat processing unit 28 is cleaned. In order not to affect the processing unit 21, the temperature control processing unit 29 also considers its disposition position as a buffer-like function for suppressing the influence of heat. Further, in order to suppress the influence of heat on the cleaning processing unit 21, the heating processing unit 28
Also, it is preferable that the processing unit that performs processing at a higher temperature be arranged at a higher position, that is, a position farther from the cleaning processing unit 21. Further, in this embodiment, although one temperature control processing unit 29 is provided, the effect of heat on the cleaning processing unit 21 is more suppressed when a plurality of the temperature control processing units 29 are provided.

Next, on the side of the cleaning station 21 facing the transport mechanism 11 of the cassette station section 90 described above,
A transport mechanism 12 is provided. This transport mechanism 12
Similar to the transport mechanism 11 described above, a plurality of stacked arms 41 as a holding mechanism for holding or supporting the glass substrate G are provided. Each of these arms 41 is configured to be freely expandable and contractible (X1 direction) independently, and the base 40 of these arms 41 collectively moves a plurality of arms 41 in the vertical direction (Z1 direction) and the rotation direction (Z1 direction). (θ1 direction), and is connected to the respective processing units via the general inlet / outlet 39 of the heating processing unit 28 and the temperature control processing unit 29 of the cleaning processing unit 21, the adhesion processing unit 26, and the dehydration baking unit 27. On the other hand, the glass substrate G is configured to be freely loaded and unloaded.

Next, the configuration of the resist coating processing section 22, which is another processing arrangement section in the processing station section 91, will be described with reference to FIG. The resist coating processing unit 22 includes a plurality of processing units including a processing unit that performs a predetermined process, for example, a liquid-based process. These processing units apply a resist liquid to the glass substrate G from a resist liquid supply nozzle 61 serving as a resist liquid supply mechanism for supplying a resist liquid to the glass substrate G, for example, as a predetermined liquid treatment for the glass substrate G. The resist solution on the glass substrate G is formed by supplying the resist liquid on the glass substrate G by the centrifugal force generated by the rotation of the rotatable rotating mechanism 62 which is supplied and holds the glass substrate G so as to form a resist film over the entire processing surface of the glass substrate G. During the resist film forming step, a resist coating section 51 is configured so that one of the upper cup 63 and the lower cup 64 moves by a mechanism (not shown) and contacts the other to maintain a certain degree of hermetic state in the cup.
And an upper cup 65 and a lower cup 66 by a mechanism (not shown).
Either one moves and comes into contact with the other, and the inside of the cup constituted by the upper cup 65 and the lower cup 66 is configured to be set to a certain degree of reduced pressure by an exhaust mechanism, for example, a vacuum pump 67. A reduced-pressure drying unit 52 for drying the formed film of the resist liquid on the treated glass substrate G to a certain degree under reduced pressure, and a resist film on the periphery of the glass substrate G processed by the reduced-pressure drying unit 52 A solvent liquid supply nozzle 68 serving as a solvent supply mechanism supplies a solvent liquid, for example, a thinner or the like, and an unnecessary resist film removing section 53 that removes a resist film on a peripheral portion of the glass substrate G constitutes a main part thereof. .

Further, the glass substrate G is sequentially placed in the processing sections of the resist coating section 51, the reduced pressure drying section 52, and the unnecessary resist film removing section 53 (in one direction, that is, in the direction in which the next processing step is performed, in the self-running direction of the transport mechanism 15). A transport mechanism 79 configured to be transportable substantially horizontally (Y5 direction) in a direction substantially parallel to Y2.
Will be described with reference to FIG. This transport mechanism 79
Are provided with arms 69 and 70 as a holding mechanism for supporting or holding the back surface or side surface of the glass substrate G.
The arms 69 and 70 are configured to move close to and away from each other (Y5 direction in the figure), and move up and down to move the respective processing units and the transport mechanism 12 and the glass substrate G. Arm 6
At 9, 70, the glass substrate G is configured to be able to move substantially horizontally while holding the glass substrate G.

Next, as shown in FIG. 3, a glass substrate G is provided above the resist coating section 22, that is, on one side of the upper portion.
Processing unit 71 of the second heat system for processing with predetermined heat
Is arranged. The heat-based processing unit 71 includes the glass substrate G that is also disposed in the first heat-based processing unit 25 described above.
And a glass substrate G processed by a predetermined processing unit of the heat processing unit 28. The temperature control processing unit 29 for setting the temperature substantially at the time of the processing in the inside is stacked and disposed. In other words, the pre-processing of the processing in the resist coating processing section 22 is performed by the processing section 25 of the first thermal system and the second processing.
The glass substrate G is processed by the thermal processing section 71.

The unit configuration of the first thermal processing unit 25 and the second thermal processing unit 71 may be the same, but it is more preferable that the resist coating processing unit be compared with the cleaning processing unit 21. 22 is more susceptible to heat due to the nature of the processing, and therefore, the total heat quantity of the processing in each processing unit disposed in the processing section 25 of the first thermal system is smaller than the total heat quantity of the processing units in the second heating system. The first heat system processing unit 25 is configured such that the total heat amount of the processing in the unit 71 is reduced or the number of the temperature control processing units 29 arranged in the first heat system processing unit 25 increases.
1, the number of the temperature control processing units 29 arranged in the cleaning processing unit 21 and the number of the temperature control processing units 29 interposed between the cleaning processing unit 21 and the heat processing unit 28 are increased.
And the number of the temperature control processing units 29 interposed between the heat treatment unit 28 and the second heat system processing unit 71 is configured only by the temperature control processing unit 29. You may make it do.

Further, on the other side above the resist coating section 22, a predetermined temperature is applied to the resist film formed on the glass substrate G processed by the resist coating section 22 to form a resist film. A heat treatment unit 76 including a plurality of heat treatment units 75 and the like to be cured, and a glass substrate G that has been treated by a predetermined treatment unit 75 of the heat treatment unit 76 are subjected to a temperature at the time of processing in the next process or an internal temperature of the apparatus. A temperature control processing unit 77 for roughly setting the temperature is stacked and arranged to form a third thermal processing unit 72. It should be noted that the temperature control processing unit 77 is interposed between the resist coating processing unit 22 and the heating processing unit 76 for the same reason as described above.

Next, the aforementioned transport mechanism 12 loads the glass substrate G into the resist coating processing section 22 from the first general entrance / exit 39 of the resist coating processing section 22 and heats the glass substrate G.
The glass substrate G is configured to be able to be freely loaded and unloaded from general entrances and exits 39 provided for the temperature control section 29 and the temperature control section 29, respectively. The operation of the transport mechanism 12 is basically as described above.

Next, the glass substrate G processed in the resist coating processing section 22 is carried out from the loading / unloading port 39 of the resist coating processing section 22 or sent to each of the heat processing unit 75 or the temperature control processing section 77 of the heating processing section 76. On the other hand, the transport mechanism 13 for moving the glass substrate G in and out through the respective loading / unloading ports 39 will be described with reference to FIG. The glass substrate G that has been processed in the resist coating unit 22 is transferred to the loading / unloading port 39 of the resist coating unit 22 or the heating / unloading port 39 of the heating processing unit 75 or the temperature control processing unit 77 of the heating processing unit 76. Coating section 51, reduced-pressure drying section 52,
In the direction in which the processing unit of the unnecessary resist film removing unit 53 is arranged, that is, in the self-running direction Y4 of the transport mechanism in the resist coating processing unit 22
It is configured to be located in a direction substantially orthogonal to.

Accordingly, the transport mechanism 13 is disposed so as to be located in a direction substantially orthogonal to the self-running direction Y4 of the transport mechanism in the resist coating section 22.
Is provided with a plurality of stacked arms 41 as a holding mechanism for holding or supporting the glass substrate G, similarly to the transfer mechanism 12 described above. These arms 41 are configured to be independently extendable and retractable (X2 direction).
The base 40 of these arms 41 collectively includes a plurality of arms 41 in the vertical direction (Z2 direction) and the rotation direction (θ2 direction).
It is configured to be freely movable.

Further, the transport mechanism 13 includes a developing unit 23
The glass substrate G is configured to be able to be carried in from the first general entrance / exit 39 of the development processing unit 23.
4, a fourth heat processing unit 7 disposed on one side of the upper part and processing the glass substrate G with a predetermined heat.
3, a heat treatment section 75 for heating the glass substrate G processed by the exposure apparatus 10 described below at a predetermined temperature;
Between the heat processing section 75 and the development processing section 23, the glass substrate G processed by the heat processing section 75 is processed so that the heat of the heat processing section 75 does not affect the development processing section 23.
The glass substrate G is configured to be able to be freely loaded and unloaded through each of the general inlets and outlets 39 of the temperature control processing unit 77 which is set to substantially the same temperature as the processing temperature in 3, for example, room temperature.

The processing units of the fourth heat system processing unit 73 and the second heat system processing unit 71 are connected to the general entrance / exit 39.
Are arranged in opposite directions, and the general entrance / exit 39 of the developing processing unit 23 and the resist coating processing unit 22 are also arranged to oppose each other.

Next, the configuration of the developing section 23 will be described with reference to FIG.
This will be described with reference to FIG. The development processing unit 23 includes a plurality of processing units including a processing unit that performs a predetermined process, for example, a liquid-based process. That is, one of the processing units supplies a developing solution for supplying a developing solution to the glass substrate G as a predetermined liquid process on the resist film on which a predetermined circuit pattern is formed by the exposure apparatus 10 for the glass substrate G. The developing solution is supplied from the developing solution nozzle 81 as a mechanism to the glass substrate G.
And a developing solution supply unit 80 for supplying the developer to the glass substrate G as one of the other processing units. A rinsing liquid such as pure water is supplied to the glass substrate G from the rinsing liquid supply nozzle 83 to remove the developing solution on the glass substrate G (replace the developing solution with the rinsing liquid), and to dry the glass substrate G with, for example, dry air. And a rinsing liquid supply unit 82 for promoting drying by a drying promoting mechanism (not shown) such as the above.

Further, the glass substrate G can be transported between the developing solution supply unit 80 and the rinsing liquid supply unit 82 in the development processing unit 23 (the next processing step is performed in one direction, that is, from the side of the developing solution supply unit 80). In a direction substantially parallel to the self-running direction Y2 of the transport mechanism 15 in the direction of the rinsing liquid supply unit 82 to be performed). A roller transport mechanism 85 as a transport mechanism configured to be able to directly or indirectly transfer the glass substrate G and to be able to transport the glass substrate G by point or surface contact is provided.

The transfer by rollers is described in the transfer mechanism 85 in the developing section 23 or the transfer mechanism 38 in the cleaning section 23, but is not limited thereto. Arms 69, 7
0, the transport mechanism may be configured, or the transport mechanism 79 in the resist coating unit 22 may be replaced with a transport mechanism using rollers. If the substrate can be transported as described above, the type of the mechanism may be changed. It is not limited.

Next, as shown in FIG. 6, a fifth thermal processing unit is provided above the developing processing unit 23, that is, on one end side of the upper thermal processing unit 73 which is not on the side where the fourth thermal processing unit 73 is disposed. A heat treatment unit 100 that performs processing at a predetermined temperature on the glass substrate G processed by the development processing unit 23 to dry and cure the resist film on the glass substrate G as a unit 74;
A temperature control processing unit 101 for substantially setting the temperature of the glass substrate G processed in the next process to the temperature at the time of processing in the next step or the temperature in the apparatus is disposed in a stacked manner. An ultraviolet irradiation unit 102 that irradiates i-ray ultraviolet rays as an ultraviolet processing unit for performing a decolorizing process of development on G (for example, in the case of processing a semiconductor wafer, an electromagnetic energy processing unit, for example, an EB process that irradiates an electron beam) And an inspection processing unit 103 for inspecting a resist film formed on the glass substrate G is provided below the ultraviolet irradiation irradiation unit 102.

Next, the transport mechanism 14 includes a plurality of stacked arms 41 as a holding mechanism for holding or supporting the glass substrate G, similarly to the transport mechanism 13 described above. These arms 41 are configured to be independently extendable and retractable (X3 direction).
The base 40 collectively includes a plurality of arms 41 in the vertical direction (Z
3) and the glass substrate G that is movable in the rotation direction (θ3 direction) and is processed in the development processing unit 23.
The glass substrate G can be freely moved into and out of each of the temperature control processing unit 101, the ultraviolet irradiation unit 102, and the inspection processing unit 103 via the loading / unloading port 39.

Next, the substrate transfer mechanism 16 shown in FIG. 1 will be described with reference to the perspective views of FIGS. 7, 8, and 9 and the cross-sectional view of the main part of FIG. As shown in FIG. 1, the substrate transfer mechanism 16 transfers the glass at a transfer position (P1, P2, P3 in FIG. 1) with a plurality of transfer mechanisms 12, 13, 14 in the processing station section 91 to transfer the glass substrate G respectively. The substrate G is configured to be freely transferable (TP), and the transfer mechanism 11 of the cassette station unit 90 is configured to be able to transfer and receive the glass substrate G (TP).

As shown in FIG. 7, the substrate transport mechanism 16 includes a transport mechanism 11 having a peripheral edge holding member 120 for holding the side or the peripheral edge of the glass substrate G and a back surface holding member 121 for holding the back side. , 12, 13 or 14 arms 4
After moving in the X direction and being positioned on the substrate transport mechanism 16, the glass substrate G holds the side or the periphery of the glass substrate G and rises so as not to interfere with the arm 41 as shown in FIG. And the slit portion 122 of the arm so as not to interfere with the arm 41.
The glass substrate G on the arm 41 is freely received by the back surface holding member 126 which projects from the rear surface of the glass substrate G and is vertically movable.

Further, the substrate transport mechanism 16 includes the transport mechanism 1
After the arm 41 of 1, 12, 13 or 14 moves in the X direction and retreats from the substrate transport mechanism 16, as shown in FIG. 9, when the peripheral edge holding member 125 and the rear surface holding member 126 descend, The glass substrate G is provided with a peripheral edge holding member 128 for holding the side or the peripheral edge of the glass substrate G, and a back surface holding member 129 for holding the rear surface of the glass substrate G.

Further, as shown in FIG. 10, the peripheral edge holding member 128 of the substrate transport mechanism 16 has a drop-in portion 130 having a plurality of angles (θ1, θ2) as a positioning mechanism for the glass substrate G. The displacement of the position of the glass substrate G during the movement of the substrate transport mechanism 16 is suppressed. Such a positioning mechanism includes the transport mechanisms 11, 1
This has the effect of preventing the position from being shifted even when the arm is transferred to the arm 41 of 2, 13, or 14. In addition, the peripheral edge holding member 120 of the arm 41 of the transfer mechanism 11, 12, 13, or 14 also includes such a mechanism, and is configured to more reliably perform the operation during the transfer or transfer of the glass substrate G. . Note that the substrate transport mechanism 16 is provided with a temperature control mechanism (not shown) to bring the glass substrate G to a predetermined temperature.
For example, the temperature can be set to a predetermined temperature suitable for conveyance or substantially the same as the processing temperature of the above-mentioned temperature control processing unit.

Next, the interface station section 9
2 will be described with reference to FIG. The interface station section 92 includes a plurality of stacked arms 41 as a holding mechanism for holding or supporting the glass substrate G, similarly to the transport mechanism 11 described above, and each of the arms 41 is independently extendable and contractible. Is composed of
The base of these arms 41 is configured so that the plurality of arms 41 can be moved collectively in the vertical direction (Z direction) and the rotation direction (θ direction), and the base is Y3 parallel to the Y1 direction of the transport mechanism 11. The transport mechanism 15 is configured to be movable in the directions.

Further, the transport mechanism 15 is configured to be able to directly or indirectly transfer the glass substrate G between the transport mechanism 13 of the processing station section 91 and the exposure apparatus 10.

Next, the cleaning section 21 in FIG.
Referring to FIGS. 11 and 12, a dotted line portion shown between the processing units inside the respective processing units shown in the drawing of the resist coating processing unit 22 and the developing processing unit 23 in FIG. 6 will be described. For example, a mechanism as shown in FIG. 11 or FIG. 12 is provided between the processing units inside the respective processing units 21, 22, and 23 as an atmosphere cutoff mechanism in order to suppress an atmosphere interference with the respective processing units. (Here, an example in which the glass substrate G is transported by a roller will be described.)

That is, the atmosphere shut-off mechanism 1 shown in FIG.
An upper shutter 152 and a lower shutter 153 are provided as an opening / closing mechanism in 50, and a silicone rubber 154 or the like is disposed as a seal member on one of the sides, for example, a contact surface of the lower shutter 153 with the upper shutter 152. Also, an upper shutter 152 and a lower shutter 153
Are relatively close to and separated from each other (Z5 in the figure), so that when the upper shutter 152 and the lower shutter 153 come into contact with each other, the atmosphere between the processing units can be shut off.

The atmosphere shut-off mechanism 150 shown in FIG.
In the configuration, a shutter is supplied in a curtain form from a nozzle 158 via an opening / closing mechanism, for example, a valve 157, from a blocking medium supply mechanism 156 for supplying a blocking medium, for example, a gas such as clean air or a liquid such as pure water. Have been. At a position below the nozzle 158, a blocking medium receiving portion 159 for collecting the blocking medium discharged from the nozzle 158 is provided.
Is configured to be recovered by a blocking medium recovery mechanism 161 via an opening / closing mechanism, for example, a valve 160. Further, the cut-off medium collecting mechanism 161 returns at least a part of the collected cut-off medium to the cut-off medium supply mechanism 156 via the circulation path 162 for merits such as cost reduction, and is configured to be freely circulated.

When the glass substrate G passes through the atmosphere cut-off mechanism 150 by the transport mechanisms 38, 79, and 85, for example, when the shutters 152 and 153 are used, the operation of the atmosphere cut-off mechanism 150 is performed. When, for example, a liquid is used in the medium, it is necessary to stop the ejection. However, in the case where a gas is used as the blocking medium, it is often not necessary to stop the operation. That is, for example, when the atmosphere shut-off mechanism 150 is disposed between the washing unit 30 and the drying promotion unit 35 in the washing processing unit 21, if the gas is used as the shut-off medium, for example, the processing has been performed by the washing unit 30. Since the cleaning liquid on the glass substrate G is blown off, a secondary effect that the processing time of the drying promotion unit 35 in the subsequent processing can be shortened can be generated. In this case, when the cleaning liquid on the glass substrate G is blown off by the blocking medium and becomes a mist, a measure is taken so as to prevent the mist from being attached to the glass substrate G after being processed by the drying promoting unit 35 or the processed glass substrate G. There is a need. As one of such measures, a plurality of atmosphere shutoff mechanisms 150 may be arranged in the transport direction of the glass substrate G. From the above, the atmosphere blocking mechanism 15
It is necessary to appropriately select 0 according to the arrangement environment or the preceding and following processing environments.

Next, the loading / unloading port 39 provided in each processing section
Will be described with reference to FIG. 13 and FIG. The loading / unloading port 39 provided in each processing unit is provided with a sealing member around the loading / unloading port 39 on the inner wall 165 in each processing unit as shown in FIG.
A ring 166 is provided, and an opening / closing mechanism shown in FIG. 14, for example, a shutter mechanism 167 moves from a standby position in a predetermined operation, for example, moves in a Z0 direction in the figure, moves further in a X0 direction, contacts an O-ring 166, and carries in and out. 39 is openable and closable.

Further, the loading / unloading port 39 having an opening / closing mechanism capable of opening / closing each processing section is generally configured to form a downflow of air from a clean room through a filter or the like in the apparatus. One of the main purposes is to prevent the interference of the atmosphere of each processing unit. For example, when the heated atmosphere of the heat processing section 75 flows into the resist coating section 22, the resist coating step tends to change the thickness of the coating film due to the influence of heat, so that the glass substrate G
The yield of the process occurs. Further, for example, it is necessary to take measures to prevent the mist of the cleaning liquid or the like from the cleaning processing unit 21 from scattering outside the cleaning processing unit 21 and from adhering to the glass substrate G during transportation or the like. In order to solve such a problem, the opening and closing mechanism of the carry-in / out port 39 is effective when such a problem occurs.

Further, for example, the atmosphere pressure inside the resist coating section 22 is set to be substantially higher than the atmosphere pressure outside the resist coating section 22 so that the atmosphere outside the resist coating section 22 is subjected to the resist coating process. The opening / closing mechanism of the loading / unloading port 39 of the resist coating processing unit 22 may not be specially provided if the processing enters the inside of the unit 22 and the other processing unit does not cause any particular effect.

An example of the procedure of the process of processing the glass substrate G in the resist coating and developing apparatus 1 configured as described above will be described below. First, human or mechanical conveyance to the cassette placement section 2 of the cassette station section 90,
For example, at least one cassette C is transported by the AGV robot, and the glass substrates G are unloaded one by one from the cassette C that stores a plurality of unprocessed glass substrates G placed in the cassette placement unit 2 to the transport device 11. The unloaded glass substrate G is directly carried into the ultraviolet ray processing section 24, and the ultraviolet ray processing section 24 performs pre-cleaning processing.

Next, the glass substrate G processed by the ultraviolet ray processing section 24 is transported by the transport device 11 to the cleaning section 21 located below the ultraviolet ray processing section 24 through the general port 39 (general port 39). The opening / closing mechanism is not particularly described. The same applies hereinafter.) The glass substrate G is transferred directly or indirectly to the transport mechanism 38 by rollers in the cleaning processing unit 21 and then the glass substrate G is rotated by the rotation of the rollers of the transport mechanism 38. The wafer is transported substantially horizontally to the 30 processing positions and subjected to a cleaning process.

Next, the glass substrate G having been subjected to the cleaning process
Is the drying promoting unit 3 driven by the rotation of the rollers
The transfer is carried out substantially horizontally to the processing position 5 (the atmosphere shut-off mechanism arranged in the middle of the transfer path has not been described in particular since it has been described above.
The same applies hereinafter), and a drying process is performed. The dried glass substrate G is transported substantially horizontally to a transfer position where the glass substrate G is directly or indirectly transferred to the transport mechanism 12 by the rotation of the rollers of the transport mechanism 38, and then transported. General entrance / exit 3 of the cleaning unit 21 by the mechanism 12
9, the transport mechanism 12 transports the glass substrate G to the dehydration bake unit 27 of the heating processing unit 28 or the temperature above the resist coating processing unit 22 where the glass substrate G is disposed above the cleaning processing unit 21. General entrance 3
The glass substrate G is conveyed through 9 and dehydrated in a dehydration bake unit 27.

Next, the glass substrate G that has been subjected to the dehydration processing in the dehydration bake unit 27 is carried out of the dehydration bake unit 27 by the transport mechanism 12, and is subjected to a temperature control process at a position below the dehydration bake unit 27 by the transport mechanism 12. Part 2
9 is cooled to a predetermined temperature in the temperature control processing unit 29 and is subjected to a process of maintaining the temperature at the predetermined temperature.

Next, the glass substrate G maintained at a predetermined temperature in the temperature control processing section 29 is carried out of the temperature control processing section 29 by the transport mechanism 12, and the glass substrate G is positioned above the temperature control processing section 29 by the transport mechanism 12. Is transported to the adhesion processing unit 26, and subjected to a hydrophobic treatment (HMDS processing) in the adhesion processing unit 26.

Next, the adhesion processing unit 26
The glass substrate G processed in the inside is either a temperature control processing unit 29 disposed below the adhesion processing unit 26 by the transport mechanism 12 or a temperature control processing unit 29 positioned above the resist coating processing unit 22. Temperature control unit 29
And is cooled to a predetermined temperature in the selected temperature control processing unit 29, for example, a temperature substantially equal to or close to the temperature in the processing in the resist coating processing unit 22 for performing the next process. A process for setting a predetermined temperature, for example, approximately room temperature is performed.

Next, the glass substrate G maintained at a predetermined temperature in the temperature control processing section 29 is carried out of the temperature control processing section 29 by the transport mechanism 12, and is moved below the temperature control processing section 29 by the transport mechanism 12. The glass substrate G is conveyed to the positioned resist coating processing unit 22 through the general entrance / exit 39 and directly or indirectly transferred to the transport mechanism 79 in the resist coating processing unit 22. The wafer is conveyed substantially horizontally to the processing position 51 and subjected to a coating process of a resist liquid.

Next, the glass substrate G, which has been subjected to the resist liquid application processing in the resist application section 51, is transported substantially horizontally to the processing position of the reduced-pressure drying section 52 by the transport mechanism 79, and is dried by reducing the pressure. Will be applied. The decompressed glass substrate G is transported substantially horizontally to the processing position of the unnecessary resist film removing unit 53 by the transport mechanism 79, and the process of removing the unnecessary portion of the resist film formed on the peripheral portion of the glass substrate G is performed. Will be applied. The glass substrate G from which the unnecessary portion of the resist film has been removed is transported substantially horizontally to the transfer position where the glass substrate G is directly or indirectly transferred to the transport mechanism 13 by the transport mechanism 79, and then the transport mechanism By 13, it is conveyed out of the resist coating unit 22 through the general entrance / exit 39 of the resist coating unit 22.

Next, the transport mechanism 13 heat-treats the glass substrate G above the resist coating processor 22.
The glass substrate G is transferred to the selected one of the heat treatment units 75, and is subjected to heat treatment in the heat treatment unit 75.

Next, the glass substrate G, which has been subjected to the heat treatment in the heat treatment unit 75, is transferred by the transport mechanism 13 to a temperature control processing unit 77 disposed below the heat treatment unit 75.
In the inside, a process is performed to cool to a predetermined temperature, for example, a temperature suitable for conveyance, to a temperature substantially equal to or close to the ambient temperature in the conveyance mechanism arrangement unit 6, and to maintain the predetermined temperature.

Next, the glass substrate G processed in the temperature control processing section 77 is carried out of the temperature control processing section 77 by the transport mechanism 13 and then transferred to the interface station section 9.
The glass substrate G is directly or indirectly delivered to the second transport mechanism 15. Furthermore, the transport mechanism 15 is
Deliver the glass substrate G directly or indirectly to
A predetermined circuit pattern is exposed to the resist film on the glass substrate G in the exposure apparatus 10.

Next, the glass substrate G exposed in the exposure apparatus 10 is directly or indirectly delivered from the exposure apparatus 10 to the transport mechanism 15 of the interface station section 92. 1
The glass substrate G is directly or indirectly delivered to 3.

Next, the glass substrate G is transported by the transport mechanism 13 to the heating processing unit 7 located above the developing processing unit 23.
5 and subjected to a heat treatment after exposure. The glass substrate G processed in the heating processing unit 75 is transferred to the transport mechanism 1
3, the wafer is selectively conveyed to any one of the temperature control processing units 77 disposed below the heat processing unit 75 or the temperature control processing unit 77 positioned above the resist coating processing unit 22 and is selected. The temperature is reduced to a predetermined temperature in the temperature control processing unit 77, for example, substantially the same as or close to the temperature in the processing in the developing processing unit 23 for performing the next process, and the predetermined temperature, for example, approximately room temperature. Is set.

Next, the glass substrate G set to a predetermined temperature in the temperature control processing unit 77 is carried out of the temperature control processing unit 77 by the transport mechanism 13 and is moved below the temperature control processing unit 77 by the transport mechanism 13. General entrance / exit 39
And the glass substrate G is transported directly or indirectly to the transport mechanism 85 in the developing unit 23, and then the glass substrate G is transported substantially horizontally to the processing position of the developer supply unit 80 by the transport mechanism 85. By supplying the liquid to the glass substrate G, a liquid filling process of the developer is performed on the glass substrate G.

Next, the glass substrate G on which the developing solution is supplied by the developing solution supply unit 80 is transferred to the processing position of the rinsing liquid supply unit 82 by the transport mechanism 85. The developing solution is transported substantially horizontally so as not to fall from the glass substrate G, and after the chemical reaction of the developing solution with the resist film is completed, the developing solution is supplied and replaced with a rinsing solution. Thereafter, drying or shaking by air supply (not shown) A drying process such as drying is performed. The glass substrate G that has been treated with the rinsing liquid is transferred substantially horizontally to the transfer position where the glass substrate G is directly or indirectly transferred to the transfer mechanism 14 by the transfer mechanism 85, and then the transfer mechanism 14
As a result, the glass substrate G is carried out of the development processing unit 23 through the general entrance / exit 39 of the development processing unit 23.

Next, the transport mechanism 14 transports the glass substrate G to the ultraviolet ray processing section 102 disposed above the development processing section 23, and the glass substrate G is subjected to decolorization processing in the ultraviolet ray processing section 102. Thereafter, the glass substrate G is transported to the heat treatment unit 100 by the transport mechanism 14 and subjected to heat treatment, and then the glass substrate G is transported to the temperature control processing unit 101 by the transport mechanism 14 and cooled.

Next, the transport mechanism 14 transports the glass substrate G to the inspection processing unit 103, and performs a process of inspecting the state of the resist film on the glass substrate G. Then, the glass substrate G
Transfers the glass substrate G to the transfer mechanism 11 of the cassette station unit 90 indirectly or directly by the transfer mechanism 14 via the substrate transfer mechanism 16 arranged at the position P1 (in FIG. 1).

Next, the transport mechanism 11 carries the glass substrate G into the cassette C that stores the processed glass substrate G to be placed in the cassette placement section 2, and a series of processing ends.

The operation or role of the substrate transport mechanism 16 is as follows in addition to the above. When the processing of the glass substrate G is not a series of processing described above, but only the processing up to the cleaning processing is to be performed as an operation of the substrate transport mechanism 16, for example, the position P2 (in FIG. 1) ended in the cleaning processing unit 21. And receives the glass substrate G indirectly or directly via the transfer mechanism 12, moves to the position P1 (in FIG. 1), and transfers the glass substrate G to the transfer mechanism 11 of the cassette station unit 90. For example, when only the processing up to the resist coating processing is performed, or only the processing up to the exposure processing is performed, or only the processing up to the thermal processing after the exposure processing is performed, P3 (see FIG. 1) ) Position and receives the glass substrate G indirectly or directly via the transfer mechanism 13, moves to the position P <b> 1 (in FIG. 1), and transfers the glass substrate G to the transfer mechanism 11 of the cassette station unit 90.

As described above, when the predetermined processing in the apparatus 1 is selected, or when the processing of the glass substrate G such as a failure or stop of the apparatus 1 becomes impossible to be performed any more, the glass substrate G from the apparatus 1 cannot be executed. It operates to access each transport mechanism when paying out.

As described above, according to the present embodiment, the cleaning processing unit 21 performs predetermined processing on the glass substrate G, and the cleaning unit 30 performs processing before and after the processing. The promotion part 35 is arranged in one direction,
In the resist coating section 22, a resist coating section 51, a reduced pressure drying section 52, and an unnecessary resist film removing section 53 are arranged in one direction as processing sections for performing steps before and after the processing. The developing solution supply unit 80 and the rinsing solution supply unit 82 are arranged in one direction as processing units for performing the processes before and after the processing.
Inside and inside the resist coating section 22 and the developer supply section 80
A transport mechanism 3 capable of transporting the glass substrate G in one direction.
8, 79, and 85, respectively, and a cleaning processing unit 21, a resist coating processing unit 22, and a developer supply unit 80.
Are provided with transport mechanisms 12, 13, and 14 for transporting the glass substrate G processed in the respective sections.

That is, the processing units for performing predetermined and preceding and following processing are integrated, and further, a transport mechanism for transporting the substrate to the inside and outside of the integrated processing system is provided in a block (for example, the cleaning processing unit 21). And the transport mechanism 12 or the resist coating processing section 22 and the transport mechanism 13 or the development processing section 23 and the transport mechanism 14), for example, compared with a conventional system in which processing sections are separately arranged and configured, Since the thickness of the processing wall on the side part adjacent to the chamber can be reduced, the space can be reduced and the apparatus can be downsized, and as a result, the footprint of the apparatus can be reduced. . In addition, in a plurality of processing units set to the same atmosphere, a mechanism for setting the atmosphere in each processing unit is required. However, by integrating the processing units, the mechanism for setting the atmosphere is reduced. The size of the device can be reduced, and as a result, the footprint of the device can be reduced. Further, the cost of the apparatus can be reduced, which can further contribute to the development of industry.

Further, by integrating the processing units for performing the processing before and after the predetermined processing, the transfer time between the processing units is fixed, and a plurality of substrates are compared with the conventional system in which the processing units are separately arranged. Can be made constant, and therefore, the variation in the processing for each substrate can be suppressed, and the yield can be reduced.

Further, a processing unit for performing predetermined pre- and post-processing is integrated, a system is provided with a single transport mechanism in the processing unit, and at least one or a plurality of the systems are combined to constitute an entire system. By
Compared to a conventional system in which processing units are separately arranged and configured, for example, the thickness of the processing wall on the side part adjacent to the processing chamber configuring the processing unit can be reduced, and accordingly, the space can be reduced, so that the The size can be reduced, and as a result, the footprint of the device can be reduced. In addition, a processing unit that performs a predetermined process on a substrate processed by the processing unit arranging unit, for example, a heating processing unit is disposed above a processing unit (a processing unit arranging unit) that performs predetermined front and rear processes. As a result, the space can be further reduced, so that the size of the apparatus can be reduced. Further, since the processing unit arrangement unit and the heating processing unit can be accessed by the transfer mechanism provided for each processing unit arrangement unit, there is no need to have an extra transfer mechanism and the space can be further reduced, so that the apparatus can be downsized. .

Further, a processing unit for performing a predetermined process on the substrate processed by the processing unit arranging unit, for example, a heating processing unit, is disposed above a processing unit (processing unit arranging unit) for performing predetermined preceding and following processes. By providing the heat treatment section above the treatment section arrangement section, for example, the non-heat treatment section, the heat of the heat treatment section can be suppressed from going down, and the heat influences the treatment section arrangement section. , And the yield can be reduced.

Further, a dedicated transfer mechanism is provided for each of the processing units (processing unit arranging units) that perform the pre- and post-predetermined processes, and the transfer units are integrally configured so that the substrates can be transferred from each transfer mechanism at least. Having a single board transfer mechanism increases the degree of freedom of use of the system for maintenance, paying out substrates, etc., and also allows people to enter the area where the board transfer mechanism is located, for example, a linear area, and use it as a maintenance area can do.

Further, a transport mechanism arranged in the same direction as the transport direction of the substrate in the processing unit arrangement unit attached to one processing unit arrangement unit, and a processing unit arrangement attached to the other processing unit arrangement unit. By having at least two systems with a transport mechanism arranged in the direction perpendicular to the transport direction of the substrate in the unit and combining them to constitute the entire system, the conventional separate processing unit was arranged and configured Compared with the system, for example, the thickness of the processing wall on the side part adjacent to the processing chamber constituting the processing unit can be reduced, and accordingly, the space can be reduced, so that the apparatus can be downsized. Can be reduced in footprint.

Further, a heat treatment section is disposed above the liquid processing section (processing section arrangement section) (that is, disposed above the general inlet / outlet of the processing section arrangement section or above the substrate transfer height in the processing section arrangement section). ), The heat treatment section is provided above the liquid treatment section, so that the heat of the heat treatment section can be suppressed from going down, and the influence of the heat on the liquid treatment section can be suppressed. It is possible to reduce the yield.

Further, by disposing the atmosphere shut-off mechanism inside the liquid processing section (processing section arrangement section), it is possible to suppress the interference of the atmosphere between the processing sections in the processing section arrangement section, and to reduce the influence between the liquid processing sections. Thus, the yield can be reduced.

Next, a second embodiment of the present invention will be described. FIG. 15 shows an LCD according to a second embodiment of the present invention.
FIG. 1 is a plan view showing a resist coating and developing apparatus for a glass substrate for use. FIG. 16 is a sectional view showing a main part of FIG.
The description of the same symbols as those in the first embodiment is omitted.

As shown in FIG. 15, the glass substrate G processed by the processing section arrangement section, for example, the development processing section 23 provided in the resist coating and developing processing apparatus 109 is transported by the transport mechanism 14.
Thus, the fifth thermal processing section 74 disposed above the developing processing section 23 performs the processing as in the first embodiment. Further, the transport mechanism 14 is configured as shown in FIG.
As shown in FIG. 3, the glass substrate G can be freely transferred to another transfer mechanism, for example, a thermal processing unit 110 that is disposed on the transfer area 108 of the transfer mechanism 11 and performs a thermal process on the glass substrate G. It is configured. Further, the transport mechanism 14
As shown in FIG. 15, the glass substrate G is also transferred to another transfer mechanism, for example, a thermal processing unit 110 which is disposed on a transfer area of the substrate transfer mechanism 16 and performs a thermal process on the glass substrate G. It is freely configured.

As shown in FIG. 16, the thermal processing section 110 includes a heating processing section 115 configured by stacking a plurality of heating processing units 114 for processing a glass substrate G with predetermined heat. The transfer area 108 of the transfer mechanism 11 or the substrate transfer mechanism 16 below the heat processing unit 115.
A plurality of temperature control processing units 116 for transporting or substantially setting the temperature at the time of processing in the next step with respect to the 115 glass substrate G processed by the heat processing unit 115 are stacked and arranged above the And a temperature control processing unit 117.

As described above, by including a larger number of thermal processing units 110 than in the first embodiment, for example, the processing time of the glass substrate G to be processed by the development processing unit 23 (processing unit arrangement unit) is reduced. In the case where a processing time shift occurs, for example, when the processing time is shorter than the processing time of the glass substrate G processed by the fifth thermal processing unit 74, a decrease in processing throughput due to the standby time is prevented compared to the first embodiment. It becomes possible. In the case where there is a limit in the height direction in the fifth heat system processing unit 74, the number of processing units disposed there is limited. The size of the apparatus can be reduced.

In the thermal processing section 110, the temperature control processing unit 116 is disposed between the heating processing section 115 and the transfer area 108 of the transfer mechanism 11 or the substrate transfer mechanism 16. The transfer of heat to the glass substrate G held by the method can be suppressed, and the yield can be reduced. Considering further the influence of heat, for example, the thermal processing unit 1 above the other transport mechanism 11
10 includes a thermal processing unit 110 composed of only a heat processing unit 114 and a thermal processing unit 74 composed of only a temperature control processing unit 116 above the development processing unit 23 (processing unit disposition unit). Thus, it is possible to further suppress the transfer of heat to the glass substrate G to the development processing section 23 (processing section arrangement section).

Further, as shown in FIG. 15, such a configuration is such that, for example, the transport mechanism 14 is disposed on a transport area of another transport mechanism, for example, the transport mechanism 16 and performs thermal processing on the glass substrate G. The glass substrate G is configured to be able to be transported to the thermal processing section 111 to be applied, and the transport mechanism 13 is disposed on a transport area of a plurality of other transport mechanisms, for example, the transport mechanism 16 and performs thermal processing on the glass substrate G. Thermal processing unit 112 for applying
, Or another transport mechanism, for example, the glass substrate G is configured to be transportable to a thermal processing unit 112 that is disposed on a transport area of the transport mechanism 15 and performs a thermal process on the glass substrate G, It is configured to produce effects similar to the effects described above.

Next, the LC according to the third embodiment of the present invention will be described.
A resist coating and developing treatment apparatus for a glass substrate for D will be described. FIG. 17 shows an LC according to the third embodiment of the present invention.
It is a top view which shows the resist coating development processing apparatus of the glass substrate for D. FIG. 18 is a sectional view showing a main part of FIG. FIG. 19 is a perspective view showing a main part of FIG. In addition,
For the same symbols as those in the first embodiment,
The description is omitted.

As shown in FIG. 17, in the resist coating / developing apparatus 170, a linear transport arrangement section 171 in which the substrate transport mechanism of the first embodiment is disposed is provided with a glass substrate G.
Are divided into a plurality of parts by a standby part 172 for temporarily waiting the substrate transfer mechanisms 16a and 16b in the plurality of divided areas 173, respectively. Further, the substrate transfer mechanism 16a and the substrate transfer mechanism 16b are configured to be able to transfer the glass substrate G via the standby unit 172, and the substrate transfer mechanism 16b and the transfer mechanism 13 are capable of directly or indirectly transfer the glass substrate G. Is configured.
Note that the substrate transport mechanisms 16a and 16b are self-propelled and
It is configured to be able to self-run in the direction.

Further, in the substrate transport mechanism 16a and the substrate transport mechanism 16b, as shown in FIG. 18, the arm 41 is provided with a plurality of holding members 175 as a holding mechanism for holding or supporting the glass substrate G. A portion 176 is provided. Further, the arm 4 is located below the arm 41.
A base 178 of a holding member provided with a plurality of holding members 177 as a holding mechanism for holding or supporting the glass substrate G that can freely protrude from the first slit portion 176; For example, a mechanism for temporarily waiting the glass substrate G constituted by the air cylinder 179 is provided.

Further, as the operations of the substrate transport mechanism 16a and the substrate transport mechanism 16b, the transport mechanism 13 and the substrate transport mechanism 1
The transfer of the glass substrate G to and from the base 6 is performed, for example, by first using the air cylinder 179 of the substrate transfer mechanism 16b.
78, the holding member 177 is made to protrude from the arm 41 of the substrate transfer mechanism 16b, the glass substrate G is transferred to the holding member 177 by the arm 41 of the transfer mechanism 13, and then the base 178 is lowered by the air cylinder 179. Then, the glass substrate G of the holding member 177 is transferred to the holding member 175 of the arm 41 of the substrate transfer mechanism 16b. Therefore, the substrate transport mechanism 16a and the substrate transport mechanism 16b also have a function of temporarily holding the substrate.

Furthermore, since the substrate transport mechanism 16a and the substrate transport mechanism 16b each have an arm 41, the transport section is disposed in a processing section, for example, in the longitudinal direction of the developing section 23, that is, in the developing section 23. The glass substrate G is configured to be able to be freely loaded and unloaded from a loading / unloading port 39 provided in a direction substantially perpendicular to the direction in which the glass substrate G is transported by the mechanism 38, and the glass substrate G can be directly or indirectly transferred to and from the transport mechanism 38. Is configured.

In such a configuration, the degree of freedom of use of the system is expanded in the maintenance of the processing section arrangement section, the substrate payout, and the like, and the transport time of the glass substrate G is increased because the transport mechanism is increased. Can be further improved. Also, the standby unit 17
2, the substrate transport mechanism 16a and the substrate transport mechanism 16b can also cause the standby unit 172 to temporarily wait on the glass substrate G, thereby suppressing a transport delay in the transport of the substrate transport mechanism 16a or the substrate transport mechanism 16b. Therefore, the throughput in the transfer or processing of the glass substrate G can be further improved.

Next, the LC according to the fourth embodiment of the present invention will be described.
A resist coating and developing treatment apparatus for a glass substrate for D will be described. FIG. 20 shows an LC according to the fourth embodiment of the present invention.
It is a top view which shows the resist coating development processing apparatus of the glass substrate for D. The description of the same symbols as those in the third embodiment is omitted.

As shown in FIG. 20, the resist coating / developing apparatus 180 is the same as that shown in FIG.
As is apparent from the comparison, the function of the substrate transfer mechanism 16b is supplemented by the transfer mechanism 13. That is, the transport mechanism 13 is configured such that the transport mechanism 13 is self-propelled and can be moved in the Y2 direction in the drawing, and further includes a mechanism for temporarily waiting the glass substrate G of the substrate transport mechanism 16b.

With this configuration, the number of transport mechanisms can be reduced, the cost of the apparatus can be reduced, and the turbulence of the atmosphere inside the apparatus due to the transport mechanism can be further reduced. Since it can be suppressed, the processing yield can be improved. further,
Since the space for the utility of the transport mechanism can be eliminated, the size of the apparatus can be reduced, and as a result, the footprint of the apparatus can be reduced.

Next, the LC according to the fifth embodiment of the present invention will be described.
A resist coating and developing treatment apparatus for a glass substrate for D will be described. FIG. 21 is a diagram showing L according to the fifth embodiment of the present invention.
It is a top view which shows the resist coating development processing apparatus of the glass substrate for CD. FIG. 22 is a perspective view showing a main part of FIG. The description of the same symbols as those in the above-described embodiment will be omitted.

As shown in FIG. 21, a substrate transport mechanism 16a for transporting the glass substrate G is disposed in the linear transport arranging section 171 of the resist coating and developing apparatus 181. A processing unit 185 is provided. As shown in FIG. 22, the heat processing section 185 includes a heat processing section 187 having a plurality of heat processing units 186 for heat processing the glass substrate G, and a glass substrate provided below the heat processing section 187. Temperature control processing unit 188 for setting G to a predetermined temperature suitable for transportation and the like
And a transfer unit 190 provided below the temperature control processing unit 189 to transfer the glass substrate G between the cassette station unit 90 and the processing station unit 91. Note that the transfer unit 190 may include a temperature control mechanism that sets the glass substrate G to a predetermined temperature suitable for transportation or the like.

Further, as shown in FIG. 22, the heat treatment section 187 of the heat treatment unit 186 is arranged at a position Zb higher than the height position Za of the carry-in / out port 39 of the developing section 23, and The portion 187 is configured to suppress the influence of heat. Further, the temperature control processing unit 1
The transfer mechanism 88 and the transfer unit 190 receive a signal from the transfer mechanism 14 and the substrate transfer mechanism 16 a in the (XA direction) (the direction substantially perpendicular to the transfer direction of the glass substrate G in the processing unit disposition unit or the self-running direction of the substrate transfer device) or the transfer mechanism 11. The glass substrate G in the processing unit disposition unit and the XB direction (substantially the same direction parallel to the self-running direction)
The glass substrate G in the XA and XB directions so as to be freely accessible in the XA and XB directions. The transfer unit 190 is further provided in the XC direction (in substantially the same direction as the transfer direction of the glass substrate G in the processing unit disposition unit or the self-running direction of the substrate transfer device) or in the transfer unit 11 so as to be accessible from the transfer mechanism 15. A loading / unloading port 39 is provided so that the glass substrate G can be loaded and unloaded in a direction substantially perpendicular to the running direction. Further, the heat treatment unit 186 of the heat treatment unit 187 receives (XA
Glass substrate G in the XA direction so that only
A carry-in / out port 39 is provided so as to be able to carry-in / out the work.

As an example of the procedure for processing and transporting the glass substrate G in the system configured as described above, the transport mechanism 1
4, the glass substrate G is unloaded from the developing section 23,
The glass substrate G is transported to the selected heat processing unit 186 by the transport mechanism 14 and processed. Thereafter, the glass substrate G is unloaded from the selected heating processing unit 186 by the transport mechanism 14 and transported to the temperature control processing unit 188 selected by the transport mechanism 14 for processing. After this,
Temperature control processing unit 18 selected by transport mechanism 16a
8, the glass substrate G is unloaded, and the transport mechanism 16a
Is carried into the delivery unit 190 by the After opening / closing the loading / unloading port 39 of the transfer unit 190 in the XC direction by the opening / closing mechanism, the glass substrate G is taken out from the loading / unloading port 39 by the transport mechanism 11 of the cassette station unit 90 and is substantially unloaded from the processing station unit 91.

With this configuration, for example, when it is necessary that the atmosphere from the cassette station section 90 does not flow into the processing station section 91, only the loading / unloading port 39 of the transfer section 190 in the XC direction is required. The influence of mist and the like on the 90 side can be suppressed. Further, for example, when the processing station section 91 is set to a positive pressure from the cassette station section 90 side by a pressure adjusting mechanism or the like, the power for the pressure adjusting mechanism or the like, such as wind power, for example, the power is reduced, so that the apparatus price is reduced. In addition to the above, the interference of the atmosphere between the stations can be further reduced, and the adhesion of mist and the like can be suppressed, so that the processing yield can be improved. Further, the space for the pressure adjusting mechanism and the like can be reduced, so that the size of the device can be reduced. As a result, the footprint of the device can be reduced.

When the temperature control processing unit 188 is used as the transfer unit 190, the temperature control processing unit 188 is used.
Further provided with a loading / unloading port 39 on the XC direction side of the transfer unit 1 from the temperature control processing unit 188 by the substrate transfer mechanism 16a.
The step of transporting the glass substrate G to the glass substrate 90 can be omitted, and the throughput of the transport time of the glass substrate G can be improved. Further, when the inspection mechanism is not provided in the apparatus and is connected as another apparatus, for example, the apparatus is connected to the side facing the thermal processing unit 185 so that the transport mechanism 14 can access the apparatus, thereby improving the connectivity of the apparatus. Is also good.

Next, the LC according to the sixth embodiment of the present invention will be described.
As another embodiment of the resist coating and developing apparatus for a glass substrate for D, a processing liquid coating processing apparatus will be described. FIG.
FIG. 3 is a plan view showing an apparatus for applying a processing liquid to a glass substrate for an LCD according to a sixth embodiment of the present invention. 24 is a plan view showing a main part of the processing unit arranging unit in FIG. 23, FIG. 25 is a perspective view showing a main part of the processing unit arranging unit in FIG. 23, FIG. 26 is a diagram for explaining processing, and FIG. 24 is a plan view illustrating a main part of a processing unit arrangement unit as another embodiment of the 24 processing unit arrangement unit. FIG. The description of the same symbols as those in the above-described embodiment will be omitted.

As shown also in FIG. 23, the processing liquid coating apparatus 194 includes, for example, a color solvent (for a semiconductor wafer, such a coating liquid as SOD or S
An organic or inorganic solvent for forming the OG film is conceivable. A) a processing unit disposition unit for applying the processing liquid, for example, an application processing unit 22a having the same configuration as the above-described resist coating processing unit 22, a processing unit disposition unit such as the cleaning processing unit 21, The thermal processing unit 185a, which has the same configuration as the system processing unit 185 and does not include the heat processing unit 187 in the configuration, the transport mechanisms 12 and 16a, the coating processing unit 22a, and the cleaning processing unit 21 And a thermal processing section 200 as another processing section arrangement section, each of which is disposed above or below the first processing station section 19.
5, the cassette station section 90, and the transport mechanism 15a
The main part thereof is composed of a thermal processing second processing station section 196 provided with a plurality of, for example, two thermal processing sections 200 disposed on the object with the transport mechanism 15a interposed therebetween. In addition, at least one thermal processing unit 200 is arranged in a case where a plurality of thermal processing units are stacked.

Further, as shown in FIG. 24, the thermal processing section 200 has at least one loading / unloading port 39 for loading or unloading the glass substrate G into the thermal processing section 200.
For example, a plurality of, for example, three, glass substrates are provided directly or indirectly with the transport mechanism 16a or the transport mechanism 15a disposed outside the thermal processing section 200 inside the thermal processing section 200. The glass substrate G is provided with an arm-shaped temperature control processing unit 205 including a temperature control mechanism for transferring G and a moving mechanism as a moving processing unit that moves in the XP direction (longitudinal direction of the processing unit disposition unit) in the figure. The main part is constituted by the heat treatment part 206 for performing heat treatment at a predetermined temperature and the above-described atmosphere shutoff mechanism 150.

Further, the temperature control processing unit 205 is configured to protrude from below the temperature control processing unit 205 and holds a glass substrate G, such as a holding pin 2.
07 are provided so as not to come into contact with 07.
Further, the temperature control processing unit 205 includes a holding member for holding or supporting the glass substrate G, for example, a holding pin 209. The standby position of the temperature control processing unit 205 is a temperature control position at which the glass substrate G is directly or indirectly transferred to the transport mechanism 16a or the transport mechanism 15a disposed outside the thermal processing unit 200 as shown in the figure. This is the area 210.

Next, the heat treatment section 206 is fixedly arranged in the heat treatment area, and as shown in FIG. 25, when at least one of the lid section 219 and the base 212 comes close to each other, the processing chamber Is formed.
On the base 212, a hot plate 213 as a heating body for setting the glass substrate G at a predetermined temperature, and the hot plate 213
O-ring 21 serving as a sealing member for contacting the bottom of the lid portion 219 to make the processing chamber a closed space
4, and between the O-ring 214 and the hot plate 213, a plurality of exhaust ports 215 for exhausting the inside of the processing chamber are provided. 217.
The hot plate 213 is provided with a hole 218 in which a holding member for holding or supporting the plurality of glass substrates G, for example, a holding pin (not shown) is configured to be freely protruded. The glass substrate G delivered from the holding pins configured to be protrudable with respect to the
A holding member, for example, a holding pin 220, for positioning and holding or supporting the positioning member 13 is provided.

When the base 212 and the processing chamber are formed, a predetermined processing gas or a predetermined gas such as an inert gas, for example, nitrogen, is opened and closed from the gas supply unit 223 in the processing space. A mechanism, for example, a gas supply mechanism 221 to be supplied via a valve 224, and a base 212 and an opening / closing mechanism for opening and closing the processing space when the processing chamber is formed, for example, the valve 22
An exhaust unit 222, for example, a vacuum pump 226, is provided through the exhaust unit 5 through the exhaust unit.

In the system configured as described above,
An example of a procedure for processing the glass substrate G will be described below. First, the glass substrate G carried out of the cassette C by the carrying mechanism 11 is carried into one of the washing processing units 21 by the carrying mechanism 11 arranged in the first atmosphere and subjected to the washing processing. . Further, the glass substrate G processed in the cleaning processing unit 21 is carried out of the cleaning processing unit 21 by the transport mechanism 12 and is transferred to the thermal processing unit 200 above either the coating processing unit 22a or the cleaning processing unit 21. Selectively conveyed.

As an example of a procedure for transferring the transfer mechanism 12 and the thermal processing unit 200, after the opening / closing mechanism (not shown) of the loading / unloading port 39 of the thermal processing unit 200 is opened, the transfer mechanism 1
The arm 41 holding the glass substrate G of the second
Is located above the temperature control processing unit 205 in the thermal processing unit 200 via the. Thereafter, after the glass substrate G is transferred onto the holding pins 207 protruding from below the temperature control processing unit 205, the arm 41 of the transport mechanism 12 retreats outside the thermal processing unit 200. (After that, the opening / closing mechanism (not shown) of the carry-in / out port 39 is closed.) The holding pin 207 descends while holding the glass substrate G, and transfers the glass substrate G to the holding pin 209 of the temperature control processing unit 205. (At this time, the temperature control processing unit 205 is in a stationary state,
The glass substrate G held by the holding pins 209 is heated to a predetermined temperature, for example, approximately room temperature 2 by the temperature control mechanism of the temperature control processing unit 205.
Temperature control processing is started at 3 ° C (temperature control processing step before heat processing))

Next, the temperature control processing unit 205
The temperature control region 210 (second
Atmosphere) to the heat treatment region 211 (third atmosphere)
In other words, in the direction of the heat treatment unit 206 (the XP direction), the wafer is horizontally moved to a position above the hot plate 213 of the heat treatment unit 206 via the atmosphere cutoff mechanism 150. The holding pins protrude from the holes 218, and the glass pins G of the temperature control processing unit 205 are held and delivered by raising the holding pins. (After this, the temperature control processing unit 2
05 moves to the temperature control area 210 and stands by. )

Next, a predetermined gas is supplied from the gas supply mechanism 221 into the heat treatment area 211, and the surrounding atmosphere of the glass substrate G is set to a substantially predetermined gas (atmosphere setting step before heat treatment). The holding pin to be held is lowered and housed in the hole 218, and the glass substrate G is transferred to the holding pin 220 of the hot plate 213. After this, the lid 219 descends, and the bottom of the lid 219 and the O-ring 214 of the base 212 come into contact with each other to form a processing chamber. Further, the gas supply mechanism 221
The glass substrate G is subjected to a heat treatment, for example, a heat treatment at a temperature of 200 ° C. or more as a heating temperature by exhausting the inside of the treatment chamber through the exhaust port 215 or the exhaust mechanism 222 while introducing a predetermined gas into the treatment chamber (heat treatment). Process).

Next, after the glass substrate G is subjected to heat treatment in the processing chamber, the formation of the processing chamber is released by raising the lid 219 and separating from the base 212. The holding pin protrudes from the hole 218, and the rising of the holding pin causes the hot plate 21 to rise.
3, the glass substrate G is separated and held. (Up to this time, a predetermined gas has been supplied from the gas supply mechanism 221 to the glass substrate G (atmosphere setting step after heat treatment).) After the temperature of the glass substrate G has dropped to a predetermined temperature, the temperature adjustment processing unit 205 It moves from the adjustment region 210 (second atmosphere) and is located at a predetermined position between the hot plate 213 and the glass substrate G held by holding pins protruding from the hole 218.

Next, the holding pins projecting from the holes 218 are lowered so as to be accommodated in the holes 218, and the glass substrate G is transferred to the holding pins 209 of the temperature control processing unit 205.
(The delivered glass substrate G starts to be cooled to a predetermined temperature by the temperature control mechanism of the temperature control processing unit 205.) After that, the temperature control processing unit 205 holds the glass substrate G on the holding pins 209. In the state, the heat treatment area 211 (third
From the atmosphere) to the temperature control area 210 (second atmosphere), that is, in the standby direction (XP direction) of the temperature control processing section 205, to the standby position of the temperature control processing section 205 via the atmosphere cutoff mechanism 150, and in a stationary state. The temperature of the glass substrate G is adjusted to a predetermined temperature by the temperature adjusting mechanism of the temperature adjusting unit 205. (Temperature control processing step after heat treatment)
5, a gas supply mechanism (not shown) for supplying a gas having substantially the same temperature as the set temperature of the temperature control mechanism of the temperature control processing unit 205 to the glass substrate G held by the holding pins 209 of the temperature control processing unit 205 at the standby position. (Temperature control promoting mechanism) to increase the throughput of the temperature control process for the glass substrate G. Further, when the atmosphere shut-off mechanism 150 is made of gas as described above, the same effect can be obtained by setting the temperature of the gas to be substantially the same as the temperature set by the temperature control mechanism of the temperature control processing unit 205. . Thereafter, after the opening / closing mechanism (not shown) of the loading / unloading port 39 of the thermal processing unit 200 is opened, the glass substrate G is held by the transport mechanism 12 via the holding pins 207 projecting from below the temperature control processing unit 205. Upon receiving the glass substrate G, the glass substrate G is carried out of the thermal processing unit 200 via the carry-in / out port 39.

As an example of performing such processing, an SOD film such as an LOD on a substrate to be processed, for example, a semiconductor wafer, for example, L
FIG. 26 shows a heat treatment of an ow-K film (low dielectric constant film) and the like.
This will be specifically described with reference to FIG. FIG. 26 is a table for indicating the influence of the steps in the atmosphere setting step before the heat treatment or the atmosphere setting step after the heat treatment on the processing of the substrate. In the heat treatment of the Low-K film, assuming that the substrate and the Low-K film formed on the substrate are at the same temperature, the temperature of the substrate becomes a predetermined temperature, for example, a temperature of about 200 ° C. or more. The inventors of the present invention have discovered that when the oxygen concentration in the atmosphere around the substrate is higher than a predetermined concentration, for example, about 30 to 100 ppm, preferably 30 ppm or more, the Low-K film causes problems such as oxidation. Reached.

Therefore, in the atmosphere setting step before the heat treatment, for example, nitrogen is used as an inert gas as the predetermined gas for setting the atmosphere around the substrate by the gas supply mechanism 221, and the heating plate 213 is placed above the heating plate 213. Hole 2
The condition of the substrate held by the holding pins protruding from 18 is a predetermined temperature or less, for example, at a temperature of about 200 ° C. or less, and a predetermined oxygen concentration or less, for example, about 30 to
After setting the concentration to 100 ppm, preferably 30 ppm or less, the substrate is heated close to the hot plate 213, for example, at a temperature of 200 ° C. or higher, for example, 450 ° C. Further, in the atmosphere setting step after the heat treatment, the conditions of the substrate are a predetermined temperature or less, for example, in a state where the substrate temperature is reduced to a temperature of about 200 ° C. or less, a predetermined oxygen concentration or more, for example, about 30 to 100 ppm, preferably It is necessary to release the oxygen concentration around the substrate to the oxygen concentration in the atmosphere to 30 ppm or more.

The hot plate 213 is disclosed as a device for applying a predetermined energy to the substrate. However, a predetermined electromagnetic energy such as an electron beam by an EB device is used in place of or in combination with a heating element such as a hot plate. May be irradiated. In this case, as described above, the relationship between the substrate temperature and the oxygen concentration around the substrate needs to be set in substantially the same manner.

Further, the atmosphere in the temperature control region 210 (second atmosphere) or the heat treatment region 211 (third atmosphere) is always supplied at a predetermined oxygen concentration or less, for example, with nitrogen or the like. Filling the inside of the unit 200 is also an effective means, but the consumption of nitrogen becomes intense and the running cost becomes large, so the following solution is considered.

That is, the gas supply mechanism 221 or the temperature control promotion mechanism supplies the gas containing the oxygen concentration, for example, 30 ppm or less, nitrogen or the like to the inside of the thermal processing section 200, and maintains the positive pressure to maintain the positive pressure. The loading / unloading port 39 of the processing section 200 is closed by an opening / closing mechanism (not shown) to maintain a certain airtight state. Further, the atmosphere shut-off mechanism 150 is a shutter mechanism as described above, and is configured to be able to shut off the atmosphere in the temperature control area 210 (second atmosphere) and the heat treatment area 211 (third atmosphere).

Further, assuming that the atmosphere in which the transfer mechanism 12 is disposed outside the thermal processing section 200 is the apparatus atmosphere (first atmosphere), when the transport mechanism 12 accesses the thermal processing section 200. , Loading / unloading port 3 of thermal processing section 200
Since the opening 9 is opened by the opening / closing mechanism, the first atmosphere may flow into the second atmosphere due to the approach of the arm 41. However, at this time, if the temperature control region 210 and the heat treatment region 211 are separated by the closing operation of the atmosphere cutoff mechanism 150, the heat treatment region 211 is not affected. Further, when the atmosphere shut-off mechanism 150 is in the opening operation, there is a problem of atmosphere interference between the heat treatment area 211 and the temperature control area 210, so that the pressure is substantially equal to the pressure of the first atmosphere <the second pressure.
Pressure of atmosphere or / and pressure of second atmosphere <third
The pressure and / or oxygen concentration of the atmosphere is substantially the first
Oxygen concentration in atmosphere> oxygen concentration in second atmosphere or /
If the oxygen concentration in the second atmosphere is set so as to be greater than the oxygen concentration in the third atmosphere, it is possible to suppress the problem of atmosphere interference and to suppress the occurrence of a defect in the processing of the substrate.

Further, the temperature is substantially the temperature of the first atmosphere <the temperature of the second atmosphere or / and the temperature of the second atmosphere <the temperature of the third atmosphere. For example, if the temperature is set to a predetermined temperature or less, for example, about 200 ° C. or less and does not affect the temperature control of the temperature control processing unit 205 of the second atmosphere, the substrate is heated to some extent before the heat processing, so that the throughput of the substrate processing and the like can be improved. Is improved.

Further, since the influence of the oxygen concentration as described above is also related to the humidity in the atmosphere, the humidity is substantially the humidity of the first atmosphere> the humidity of the second atmosphere or / and the humidity of the second atmosphere. It is preferable that the humidity of the atmosphere is set to be higher than the humidity of the third atmosphere.

Next, returning to the processing procedure of the glass substrate G shown in FIG. 23, the glass substrate G is carried out of the thermal processing section 200 through the carry-in / out port 39 by the carrying mechanism 12 and then transferred to the carrying mechanism 12. The glass substrate G is subjected to a predetermined coating process in the coating processing unit 22a. Thereafter, the glass substrate G is transferred to the thermal processing unit 200 or the transport mechanism 16a above the coating processing unit 22a by the transport mechanism 16a. The glass substrate G is transferred directly or indirectly to the transfer mechanism 15a (from the first processing station section 195 to the second processing station section 196 of the thermal system) by the transfer mechanism 15a. It is directly or indirectly transported to a selected one of the plurality of thermal processing units 200 disposed on the 196 side, and subjected to the thermal processing as described above.

Next, for the thermal processing section 200 above the coating processing section 22a, the transfer section 16a or a plurality of thermal processing sections 200 disposed on the second processing station section 196 side. The glass substrate G processed by the selected thermal processing unit 200 is once transferred directly or indirectly to the transport mechanism 16a via the transport mechanism 15a. Further, the glass substrate G is transferred to the processing unit 185 by the transport mechanism 16a.
a and is carried out of the processing unit 185a by the transport mechanism 11 and carried into the cassette C, and a series of processes is completed.

With such a configuration, in the thermal processing section 200 as the processing section arranging section, the temperature control area 210 and the heat processing area 211 are provided as a plurality of processing sections in the thermal processing section 200. Heat treatment units 206 provided respectively
And a temperature control processing unit 205, that is, a processing unit that performs processing before and after a predetermined process is integrated, and further, a transfer function for transferring a substrate inside the integrated processing system is performed by at least one of the processing functions. In this case, the temperature control processing unit 205 is provided and provided as a block, so that, for example, compared with a conventional system in which processing units are separately arranged and configured, for example, processing of adjacent side portions of a processing chamber configuring processing units Since the thickness of the wall can be reduced, the space can be reduced by that much, so that the device can be downsized. As a result,
The footprint of the device can be reduced.
Further, by providing the atmosphere cut-off mechanism 150 between a plurality of processing units, for example, between the heating processing unit 206 and the temperature control processing unit 205, it is possible to suppress the interference of the atmosphere in the arrangement region of the processing units. Furthermore, by integrating the thermal processing unit, the atmosphere having heat outside the thermal processing unit arrangement unit is directly transferred from the substrate once through the temperature control processing unit 205. Outflow of heat from the heat treatment unit 206 can be suppressed, and the influence of heat on, for example, a liquid-based treatment unit arrangement unit can be suppressed as another treatment unit arrangement unit, thereby reducing the yield of substrate processing. It becomes possible to reduce.

Further, a plurality of thermal processing sections 200 are laminated to form a block, and at least one
For example, two blocks are arranged (for example, as shown in FIG. 23, the temperature control processing unit 205 as the low heating process is disposed in the direction of the processing station unit 195 that performs the liquid processing or the like (the heating processing unit is replaced with the processing station unit 195). The transport mechanism 15a is disposed so as to be as far away as possible so as to suppress the influence of heat.
By providing the thermal processing station section 196 configured to be able to carry in or transport the substrate to the thermal processing section 200 of a plurality of blocks by 5a, the thermal processing station 196 section and the processing station section 195 are provided. Can be managed individually, and the effect of heat of the thermal processing unit 200 does not act on the processing station unit 195 that performs liquid processing or the like, so that the yield of substrate processing can be reduced. Become. Further, by integrating the thermal processing station section 196, the degree of freedom is improved when constructing an apparatus system.

Another embodiment of the thermal processing section 200 will be described with reference to FIG. The substrate loading / unloading port in the thermal processing unit 200 in FIG. 27 includes a loading / unloading port 39b on the temperature control processing unit 205 side and a loading / unloading port 39a in the heating processing unit 206. The transport mechanism 15a shown in FIG.
Is the Yt direction (on the extension line in the self-running direction (Y2) of the transport mechanism 16a in the processing station unit 195 or on a line substantially parallel to the extension line) or the thermal processing unit 200
(On a line parallel to the movement direction (XP) of the temperature adjustment processing unit 205). (In the above-described embodiment, it is not configured to be self-propelled and is fixed.) By such a transport mechanism 15a, the heating process is performed through the loading / unloading port 39b to the temperature control processing unit 205 and through the loading / unloading port 39a. The substrate is configured to be able to be transported to the section 206 freely.

The operation of the system having such a configuration is as follows.
The substrate is directly or indirectly carried into the heat treatment unit 206 of the “0”. After the processing of the substrate is completed in the heat processing unit 206, the temperature control processing unit 205 moves in the direction of the heat processing unit 206, and then the substrate of the heat processing unit 206 is delivered to the temperature control processing unit 205, and the substrate is controlled in temperature. The temperature is controlled by the processing unit 205.

With this configuration, for example, when the temperature adjustment step is not required before the heat treatment, even if the carry-in / out port 39a is arranged on the heat treatment part side, no particular problem occurs.
For example, when the heating temperature is low or when it is not necessary to particularly set the atmosphere in the processing unit disposition unit, even if the loading / unloading port 39a is disposed on the heating processing unit side, a predetermined temperature is set in the thermal processing station unit 196. In a case where a countermeasure is taken and the thermal influence on the processing station unit 195 side is suppressed, the temperature control processing unit 205 is not interposed once when the substrate is carried into the thermal processing unit 200. Therefore, the processing throughput can be improved.

It is needless to say that the thermal processing section 200 described above may be replaced with a heating processing section or a temperature control processing section arranged in another embodiment. A separate heat treatment unit or temperature control unit and a heat treatment unit 200 may be used in combination.

The present invention is not limited to the above embodiments, but may be variously modified within the scope of the present invention, or may be modified by combining a plurality of main parts or the entirety of each embodiment. The layout is merely an example, and is not limited to this.Also, the processing is not limited to the processing by the resist coating and developing processing apparatus as described above, and other apparatuses for performing liquid processing and thermal processing, For example, an apparatus that only applies a predetermined processing liquid to a substrate, an apparatus that only cleans a predetermined processing liquid to a substrate, an apparatus that performs only temperature processing on a substrate at a predetermined temperature, or a configuration thereof. It is also possible to apply to a combined device or the like. LCD as a substrate to be processed
Although the case where a substrate or a semiconductor wafer is used has been described, the present invention is not limited to this.
Needless to say, the present invention can be applied to the processing of other substrates to be processed such as D.

[0153]

As described above, according to the present invention,
Improving the yield rate in substrate processing, improving the throughput of substrate processing or suppressing the decrease in the current throughput, and increasing the degree of freedom in the arrangement configuration of the apparatus by achieving a block configuration of the minimum unit of the apparatus. It is possible to improve the miniaturization of the entire apparatus and reduce the footprint of the entire apparatus without causing a configuration problem. Therefore, it is possible to improve the throughput of the substrate processing by reducing the transport distance of the substrate or the number of transport steps, etc., and to improve the atmosphere management of the substrate with respect to the substrate by controlling the block configuration of the minimum unit. The influence can be suppressed, and the yield of substrate processing can be improved.
This can contribute to industrial development.

[Brief description of the drawings]

FIG. 1 is a plan view showing a resist coating and developing apparatus according to a first embodiment of the present invention.

FIG. 2 is a side view showing the inside of a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 3 is a side view showing the inside of the main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 4 is a plan view showing the inside of a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 5 is a side view showing a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 6 is a side view showing the inside of the main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 7 is a perspective view showing a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 8 is a perspective view showing a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 9 is a perspective view showing a main part of a resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 10 is a sectional view showing a main part of a resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 11 is a perspective view showing a main part of a resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 13 is a perspective view showing a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 14 is a sectional view showing a main part of the resist coating and developing apparatus according to the first embodiment of the present invention.

FIG. 15 is a plan view showing a resist coating and developing apparatus according to a second embodiment of the present invention.

FIG. 16 is a sectional view showing a main part of a resist coating and developing apparatus according to a second embodiment of the present invention.

FIG. 17 is a plan view showing a resist coating and developing apparatus according to a third embodiment of the present invention.

FIG. 18 is a sectional view showing a main part of a resist coating and developing apparatus according to a third embodiment of the present invention.

FIG. 19 is a perspective view showing a main part of a resist coating and developing apparatus according to a third embodiment of the present invention.

FIG. 20 is a plan view showing a resist coating and developing apparatus according to a fourth embodiment of the present invention.

FIG. 21 is a plan view showing a resist coating and developing apparatus according to a fifth embodiment of the present invention.

FIG. 22 is a perspective view showing a main part of a resist coating and developing apparatus according to a fifth embodiment of the present invention.

FIG. 23 is a plan view showing a processing liquid coating apparatus according to a sixth embodiment of the present invention.

FIG. 24 is a plan view showing a main part of a processing liquid coating apparatus according to a sixth embodiment of the present invention.

FIG. 25 is a perspective view showing a main part of a processing liquid coating apparatus according to a sixth embodiment of the present invention.

FIG. 26 is a view for explaining processing according to the sixth embodiment of the present invention;

FIG. 27 is a plan view showing another embodiment of FIG. 24;

[Explanation of symbols]

1, 170, 180, 181 resist coating / developing apparatus 5, 6, 7 ... transport mechanism disposition unit 11, 12, 13, 14, 15, 15a transport mechanism 16, 16a, 16b transport mechanism ( Substrate transport mechanism) 21 Cleaning part (processing part arrangement part) 22 Resist coating part (processing part arrangement part) 23 Development part (processing part arrangement part) 25, 71, 72, 73, 74 ... Thermal processing section 38, 79, 85 Transport mechanism 90 Cassette station section 91, 195, 196 Processing station section 92 Interface station section 150 Atmosphere shut-off mechanism 194 Processing liquid application Apparatus 200: thermal processing section (processing section arrangement section) 205: temperature control processing section 206: heating processing section G: LCD glass substrate

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03F 7/30 501 H01L 21/68 A H01L 21/68 21/30 562

Claims (28)

[Claims] A processing unit configured to perform a predetermined process on a substrate to be processed in a plurality of directions, and a processing unit disposed in the processing unit and transporting the substrate to be processed; A first transport mechanism, fixed outside the processing unit disposition portion and substantially on an extension of the one direction, or fixed in a direction orthogonal to substantially an extension of the one direction, and / or in the one direction. A second transfer mechanism movably provided on a line parallel to the extension line and configured to be able to directly or indirectly transfer the substrate to be processed with respect to the first transfer mechanism. Substrate processing apparatus. 2. A process comprising: a plurality of processing units for performing a predetermined process on a substrate to be processed in one direction; and a first transport mechanism for transporting the substrate to be processed substantially only in the one direction. And a heat treatment unit provided above the processing unit placement unit for heating the substrate to be processed and / or irradiating the processing target substrate with ultraviolet light provided above the processing unit placement unit. An ultraviolet processing section and / or an electromagnetic energy processing section provided above the processing section arrangement section and configured to irradiate the substrate with electromagnetic energy; and / or the processing section arrangement section provided above the processing section arrangement section. And a test processing unit for performing a predetermined test on the substrate to be processed processed in the step (a). 3. A processing section arrangement section including a plurality of processing sections for performing a predetermined process on a substrate to be processed in one direction and a first transport mechanism for horizontally transporting the substrate to be processed. The processing target substrate provided outside the unit placement part and processed by the processing part placement part is provided to a processing part provided above the horizontal transfer position of the processing target substrate transferred by the first transfer mechanism. And a second transport mechanism for transporting the substrate. 4. A processing unit arrangement unit including a plurality of processing units including a processing unit for performing at least liquid processing on a substrate to be processed, and a first transport mechanism configured to transport the substrate to be processed, A processing unit that is provided outside the processing unit disposition unit and above the transfer position of the substrate to be processed conveyed by the first transfer mechanism and performs a heat treatment on the substrate to be processed and / or above the processing unit disposition unit An ultraviolet processing unit that is provided to irradiate the processing target substrate with ultraviolet light and / or an electromagnetic energy processing unit that is provided above the processing unit disposition unit and irradiates electromagnetic energy to the processing target substrate and / or the processing; A substrate processing apparatus, comprising: an inspection processing unit provided above a unit arrangement unit and performing a predetermined inspection on a substrate to be processed processed by the processing unit arrangement unit. 5. A third transfer mechanism and / or a third transfer mechanism configured to be capable of loading and unloading the substrate to be processed into and out of the processing unit disposition section from a direction substantially perpendicular to a transfer direction of the first transfer mechanism. A fourth transfer mechanism configured to be able to carry in and out the substrate to be processed into and out of the processing unit disposition portion from substantially the same direction as the transfer direction of the first transfer mechanism. The substrate processing apparatus according to claim 2. 6. A first processing unit arranging unit having a plurality of processing units for performing a predetermined process on a substrate to be processed in one direction and having a transport mechanism for transporting the substrate to be processed, and a substrate to be processed. A second processing unit arranging unit having a plurality of processing units for performing a predetermined process in one direction and a transport mechanism for transporting the substrate to be processed, a second processing unit arranging unit and the second A second transfer mechanism substantially provided between the first processing unit arrangement unit and the first processing unit arrangement unit and configured to be capable of loading and unloading a substrate to be processed with respect to the first processing unit arrangement unit; And a substrate processing apparatus comprising: 7. A first processing section arranging section having a plurality of processing sections for performing a predetermined process on a substrate to be processed in one direction and a transport mechanism for transporting the substrate to be processed, and a substrate to be processed. A second processing unit arranging unit having a plurality of processing units for performing a predetermined process in one direction and a transport mechanism for transporting the substrate to be processed, a second processing unit arranging unit and the second The first processing unit is provided separately for one processing unit arrangement unit.
A plurality of second transfer mechanisms configured to be able to carry in and out the substrate to be processed into and out of the processing section arrangement section or the second processing section arrangement section; and a plurality of the second transfer mechanisms and the substrate to be processed. A substrate transport mechanism configured to be freely transferable and configured to transport the substrate to be processed to a predetermined position. 8. A heat treatment section which is provided above a transfer position of the substrate to be processed by each of the transfer mechanisms of the first processing section arrangement section and the second processing section arrangement section and performs heat treatment on the substrate to be processed. And / or an ultraviolet processing unit provided above the processing unit disposition unit to irradiate the processing target substrate with ultraviolet light or / and an electromagnetic energy is irradiated on the processing target substrate provided above the processing unit disposition unit. An electromagnetic energy processing unit or / and an inspection processing unit which is provided above the processing unit arrangement unit and performs a predetermined inspection on a substrate to be processed processed by the processing unit arrangement unit; The transport mechanism is processed by the first processing unit arrangement unit or / and the second processing unit arrangement unit by the heat treatment unit and / or the ultraviolet treatment unit or / and the electromagnetic energy treatment unit and / or the inspection treatment unit. The substrate processing apparatus according to claim 6, wherein the substrate to be processed is configured to be transportable. 9. The substrate to be processed with respect to the processing unit arranging unit from a direction substantially perpendicular to the conveying direction of each conveying mechanism of the first processing unit arranging unit and the second processing unit arranging unit. The substrate processing apparatus according to any one of claims 6 to 8, further comprising a third transport mechanism configured to be able to carry in and out of the substrate. 10. A first processing section arranging section having a plurality of processing sections for performing a predetermined process on a substrate to be processed in one direction and including a transport mechanism for transporting the substrate to be processed, and a substrate to be processed. A second processing unit arranging unit having a plurality of processing units for performing a predetermined process in one direction and a transport mechanism for transporting the substrate to be processed, a second processing unit arranging unit and the second A second transport mechanism provided outside each of the first processing unit arranging units, and the first processing unit arranging unit provided between the first processing unit arranging unit and the second processing unit arranging unit And a third transport mechanism configured to be able to directly or indirectly transfer the substrate to be processed to the second processing unit disposition section or / and to the second transport mechanism. Characteristic substrate processing equipment. 11. A heat treatment unit which is provided above a transfer position of a substrate to be processed by a transfer mechanism of each of the first processing unit arrangement unit and the second processing unit arrangement unit and performs heat treatment on the substrate to be processed. And / or an ultraviolet processing unit provided above the processing unit disposition unit to irradiate the processing target substrate with ultraviolet light or / and an electromagnetic energy is irradiated on the processing target substrate provided above the processing unit disposition unit. An electromagnetic energy processing unit or / and an inspection processing unit which is provided above the processing unit arrangement unit and performs a predetermined inspection on a substrate to be processed processed by the processing unit arrangement unit; The transport mechanism processes the heat treatment section or / and the ultraviolet treatment section or / and the electromagnetic energy processing section or / and the inspection processing section in the first processing section arrangement section or / and the second processing section arrangement section. The substrate processing apparatus according to claim 10, wherein the substrate to be processed is configured to be able to be transported. 12. At least one fixed processing unit for performing a predetermined process on a substrate to be processed and a predetermined process on the substrate to be processed, and the substrate to be processed can be transported to the processing unit. A processing unit arranging unit having a configured moving processing unit, and a processing target substrate provided outside the processing unit arranging unit so that the substrate to be processed can be directly or indirectly loaded into and out of the moving processing unit in the processing unit arranging unit. A substrate processing apparatus comprising: a second transport mechanism configured; and an atmosphere shutoff mechanism for substantially shutting off an atmosphere in the processing unit arrangement and an atmosphere in the processing unit arrangement. 13. At least one fixed processing unit for performing a predetermined process on a substrate to be processed and a predetermined process on the substrate to be processed, and the substrate to be processed can be transported to the processing unit. A plurality of processing unit arrangement units each including a configured movement processing unit; and a second processing unit configured to be capable of directly or indirectly loading and unloading a substrate to be processed with respect to the movement processing unit in the plurality of processing unit arrangement units. 2. A substrate processing apparatus, comprising: 14. At least one fixed processing unit for performing a predetermined process on a substrate to be processed and a predetermined process on the substrate to be processed, and the substrate to be processed can be transported to the processing unit. A processing unit arranging unit having a configured moving processing unit, and a direction which is provided outside the processing unit arranging unit and which is in the same direction or almost perpendicular to the transport direction of the moving processing unit with respect to the processing unit arranging unit A second transfer mechanism configured to allow a substrate to be processed to be carried in and out of the substrate processing apparatus. 15. A moving processing unit in a direction from the moving processing unit side to the processing unit in a state where the moving processing unit is in the standby position or a moving processing unit direction in a state in which the moving processing unit is in the standby position from the processing unit side. 15. The apparatus according to claim 12, further comprising a gas supply mechanism configured to supply a predetermined gas to the substrate to be processed held by the moving processing unit at least in a state where the moving processing unit is at the standby position. 16. The substrate processing apparatus according to any one of the above. 16. An atmosphere pressure in the processing unit disposition unit is set to a pressure substantially higher than an atmosphere pressure outside the processing unit disposition unit and / or an oxygen concentration in the processing unit disposition unit or a predetermined pressure in the processing unit disposition unit. Or the oxygen concentration in at least one of the plurality of processing units in the processing unit arrangement unit is set to be substantially lower than the oxygen concentration outside the processing unit arrangement unit, and / or the ambient temperature in the processing unit arrangement unit Is set substantially higher than the ambient temperature outside the processing unit disposition unit and / or the atmosphere humidity inside the processing unit disposition unit is set substantially lower than the atmosphere humidity outside the processing unit disposition unit. The substrate processing apparatus according to any one of claims 1 to 11, and claims 13 to 15. 17. The apparatus according to claim 12, further comprising an atmosphere shutoff mechanism for shutting off an atmosphere between the movement processing unit and the processing unit when the movement processing unit is at the standby position. The substrate processing apparatus according to any one of the above. 18. A process in which a substrate to be processed is substantially horizontally moved and processed by a plurality of processing units, and a position above a height position of the horizontal movement of the substrate to be processed and an arrangement atmosphere of the plurality of processing units. Transporting and processing the substrate to be processed to a processing unit disposed in an atmosphere that does not substantially interfere with the substrate. 19. A process in which a substrate to be processed is substantially horizontally moved and processed by a plurality of processing units including a processing unit for performing liquid processing on at least the substrate to be processed, and a position above the plurality of processing units and The processing unit or / and / or the processing unit which is arranged in an atmosphere which does not substantially interfere with the arrangement atmosphere of the plurality of processing units and which performs heat treatment on the processing substrate and / or irradiates the processing substrate with ultraviolet rays. Transporting and processing the substrate to a processing unit that irradiates the substrate with electromagnetic energy and / or a processing unit that performs a predetermined inspection on the substrate to be processed. 20. A process in which at least a substrate to be processed is transported between a plurality of processing units including a processing unit for performing a liquid process, and processing is performed at a position higher than the plurality of processing units. A step of transporting and processing the substrate to be processed to a heat processing unit for performing a heat treatment; and a step of performing the liquid processing on the heated substrate to be processed which is disposed at a position above the plurality of processing units and below the heat processing unit. Transporting and processing the substrate to a temperature control processing section for performing processing for setting the substrate to be substantially the same as the temperature of the substrate to be processed. 21. A process in which a substrate to be processed is set at a first temperature in a stationary state in a first processing unit and processed, and the first substrate is moved by moving the first processing unit to the first processing unit. Moving the substrate to be processed while maintaining the substrate at a second temperature; and processing the substrate to be processed in a second processing unit that heats the substrate to be processed at a second temperature higher than a first temperature. A process of setting the processing unit to the first temperature or processing the substrate to be processed by setting the first processing unit to the first temperature and supplying a predetermined gas to the substrate to be processed; And a substrate processing method. 22. A substrate to be processed is received from a space set in a first atmosphere, and the substrate is processed in a first atmosphere in a second atmosphere.
A process of setting the temperature to the first temperature in the processing section of
Moving the substrate to be processed while maintaining the first temperature by moving the first processing unit in an atmosphere of the above, and raising the substrate to be processed to a temperature higher than the first temperature in the third atmosphere A step of performing processing in a second processing unit that performs heat processing at a second temperature;
And a step of carrying out the substrate to be processed into a space set in the first atmosphere. 23. In the setting of the first atmosphere, the second atmosphere, and the third atmosphere, the pressure is substantially equal to the pressure of the first atmosphere <the pressure of the second atmosphere or / and the second atmosphere. Atmospheric pressure <Pressure of third atmosphere and / or oxygen concentration is substantially the oxygen concentration of first atmosphere> Oxygen concentration of second atmosphere or / and oxygen concentration of second atmosphere> Third atmosphere The oxygen concentration or / and temperature of the first atmosphere is substantially equal to the temperature of the first atmosphere <the temperature of the second atmosphere or / and the temperature of the second atmosphere <the temperature or / and the humidity of the third atmosphere. 22. The substrate processing method according to claim 21, wherein the humidity of the first atmosphere> the humidity of the second atmosphere and / or the humidity of the second atmosphere> the humidity of the third atmosphere. 24. A step of setting the substrate to be processed to a predetermined temperature of 200 ° C. or less, a step of setting the oxygen concentration of the ambient atmosphere of the substrate to be processed to 100 ppm or less, and a step of setting the oxygen concentration of the ambient atmosphere of the substrate to be processed to 100 ppm. Setting the substrate to be processed at a predetermined temperature of 200 ° C. or higher while maintaining the substrate at a predetermined temperature of room temperature or higher, and irradiating the substrate with electromagnetic energy and performing heat treatment while maintaining the temperature at or below. A substrate processing method, comprising: 25. A plurality of processing units including a processing unit for substantially horizontally moving a substrate to be processed and performing a liquid process on at least the substrate to be processed, and a position above the plurality of processing units and the plurality of processing units. A substrate processing apparatus, comprising: at least one system configured to include a processing unit disposed in an atmosphere that does not substantially interfere with an arrangement atmosphere of the unit and performing a heat treatment on a substrate to be processed. 26. A processing unit disposing unit including at least a plurality of processing units including a processing unit for performing a liquid process on a substrate to be processed, and a transport mechanism for transporting the plurality of processing units.
A step of transporting and processing the substrate to be processed and a substrate to be processed by the transport mechanism; A process of setting a heated substrate to be disposed at a position above the transfer height position and below the heat processing unit to a temperature substantially equal to the temperature of the substrate to be processed during the liquid processing. A substrate processing apparatus, comprising: 27. A process in which a substrate to be processed is set at a predetermined temperature of 200 ° C. or lower, a process in which an oxygen concentration in an atmosphere around the substrate to be processed is set to 100 ppm or lower, 100 ppm oxygen concentration in atmosphere
The substrate to be processed is set at a predetermined temperature of 200 ° C. or higher while maintaining the temperature at a predetermined temperature of 200 ° C. or higher, or the substrate is processed at a predetermined temperature of room temperature or higher, or heated by irradiating the substrate with electromagnetic energy. And a step of treating the substrate. 28. Claims 1 to 17, and 2
A method of manufacturing a substrate, comprising a step of processing a substrate to be processed by using the substrate processing apparatus according to any one of claims 26 to 29 to manufacture the substrate to be processed.