JP2002334976A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of improving a stage tact without causing defects or malfunctions. SOLUTION: An aperture 12, capable of transmitting a light, is formed on a wiring board 11, pads 13 are formed on the ends of the aperture 12 side on the wiring board 11, and bumps 14 are formed on the pads 13, while a light- receiving part 16 for applying light is disposed on a solid-state imaging element 15, pads 17 are formed on the surface side of the element 15 where the part 16 is provided, the element 15 is disposed, so that the part 16 may face the aperture 12 of the wiring board 11. The pads 17 of the element 15 are jointed to the pads 13 of the wiring board 11 via the bumps 14. Thus, the step of forming the bumps 14 on the pads 17 of the element 15 is eliminated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device which is applied to an optical sensor and which improves a manufacturing process of a package.

[0002]

2. Description of the Related Art Generally, as an image pickup device which is one of semiconductor devices, for example, a CCD (Charge Cou) is used.
Pled Device) type, CMOS (Comple)
mentary Metal Oxide Semiic
There is a type using a solid-state imaging device such as an insulator type, and a package that protects the base of these optical sensors so as to protect the substrate is mainly made of ceramic or resin. Such a solid-state imaging device package is
It is formed by electrically connecting a solid-state imaging device and a box-shaped casing made of ceramic or resin by a wire bonding method.

In recent years, there has been a demand for smaller and thinner electronic devices in the market for electronic devices that emphasize portability. In solid-state image pickup device packages, instead of the conventional wire bonding method, a package using a flip chip method or a package is not used. By changing the structure of the solid-state image sensor directly to a flip-chip on a wiring board, miniaturization and thinning are achieved.

FIG. 3 shows a conventional method for manufacturing a fixed image pickup device package using an ultrasonic flip chip method. As shown in FIG. 3A, the light receiving unit 2 is arranged on the surface of the solid-state imaging device 1, and external connection pads 3 are formed at both ends on the same surface as the light receiving unit 2. Next, as shown in FIG. 3B, the solid-state imaging device 1 is arranged with the surface including the light receiving portion 2 facing upward, and the bumps 4 made of gold or the like are formed on the external connection pads 3 by, for example, ultrasonic waves and pressure. Attach. On the other hand, as shown in FIG. 3C, an opening 6 is formed in the wiring board 5 separately from the solid-state imaging device 1, and an electrode pad 7 is formed on the surface of the wiring board 5. Next, as shown in FIG. 3D, the solid-state imaging device 1 is placed with the surface including the light receiving unit 2 facing downward, and the wiring board 5
The electrode pad 7 of the wiring board 5 is electrically connected to the external connection pad 3 of the solid-state imaging device 1 via the bump 4. The connection method at this time is to apply ultrasonic waves and pressure by a head connected to an ultrasonic oscillation horn, for example, from above the solid-state imaging device 1 with the surface including the light receiving unit 2 facing downward, thereby connecting the ultrasonic waves to be connected. Flip chip bonding.

[0005]

However, in the conventional method of manufacturing a semiconductor device, there is room for improvement as described below in terms of yield and the like. That is, FIG.
In the step of forming the projecting bumps 4 on the external connection pads 3 of the solid-state imaging device 1 shown in (b), since the work including the light-receiving unit 2 is performed with the surface of the solid-state imaging device 1 turned upward, The probability of foreign matter adhesion increases. Even if a foreign matter of about μm adheres to the light receiving unit 2, the foreign matter is recognized as a black spot on the screen, and as a result, there is a problem that the yield is reduced due to a black spot defect. Further, since the projecting bumps 4 are formed on the solid-state imaging device 1, the solid-state imaging devices 1 must be conveyed one by one, and the process tact becomes longer. Further, a step of forming the projection bumps 4 on the external connection pads 3 of the solid-state imaging device 1 shown in FIG. 3B and the ultrasonic flip-chip bonding of the solid-state imaging device 1 and the wiring board 5 shown in FIG. In the process, the ultrasonic wave and the pressure are applied twice to the external connection pad 3 of the solid-state imaging device 1, and as a result, the external connection pad 3 is greatly damaged, which may cause a failure such as a crack. There was a point.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a semiconductor device capable of improving a process tact without causing a product defect or a failure.

[0007]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an opening through which light can pass in a wiring board on which wiring is formed;
Forming a pad at the end of the wiring board on the opening side; forming a bump on the pad of the wiring board; and a light-receiving unit that inputs light to a solid-state imaging device that converts light into an electric signal. Arranging and forming a pad on the surface side of the solid-state imaging device having the light-receiving portion, and arranging the solid-state imaging device such that the light-receiving portion faces the opening of the wiring board; Joining the pads of the solid-state imaging device via the bumps. Claim 1
The invention according to claim 2 is characterized in that the step of bonding the solid-state imaging device to the wiring board is performed using an ultrasonic flip-chip method.

[0008]

According to the present invention, first, an opening for transmitting light is formed in a wiring board, a pad is formed at an end on the opening side, and a bump is formed on a pad of the wiring board. On the other hand, apart from the wiring board, pads are also formed on the solid-state imaging device having the light receiving section. Then, the solid-state imaging device is arranged so that the light receiving portion faces the opening of the wiring board, and the respective pads are joined via the bumps. As described above, the solid-state imaging device package is manufactured by joining the wiring board and the solid-state imaging device.

[0009]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a process chart for explaining a method of manufacturing a solid-state imaging device package to which the present invention is applied. First, the steps on the wiring board 11 side will be described.
As shown in FIG. 1A, a wiring board 11 is prepared. The wiring board 11 is made of a material such as ceramic or resin, and is formed into a thin planar shape. Next, the surface of the wiring board 11 is plated with Ni (nickel) or Au (gold) as a main component,
A predetermined wiring area is formed to facilitate connection and bonding with a chip (a component 24 such as an IC, a chip component, and a connector described later). As the wiring board 11 here, a ceramic substrate, a glass epoxy substrate, an injection molded circuit board, or the like is mainly used. Next, an opening 12 through which light can pass is formed in the wiring board 11, and a plurality of gold-plated pads 13 are formed near the opening 12. Here, the opening 12
The pad 1 penetrates a part of the wiring board 11 and the pad 1
Reference numeral 3 denotes an electrode of the wiring board 11 for connection with a chip (a solid-state imaging device 15 described later).

Next, as shown in FIG. 1B, a gold bump 14 is formed on the pad 13 by stud bump bonding or plating using a wire bonding technique. The gold bump 14 is bonded to the pad 13 by an ultrasonic flip chip method using ultrasonic waves and pressure, and is electrically connected to the wiring board 11 via the pad 13 that is an electrode. Here, the ultrasonic flip chip method is a bonding method using pressure and ultrasonic oscillation, and the ultrasonic oscillation time is about 0.5 seconds, and the temperature is the same as room temperature.

On the other hand, the solid-state imaging device 15 is manufactured in a process different from that of the wiring board 11, and the process will be described next. As shown in FIG. 1C, a solid-state imaging device 15 is prepared. Here, the solid-state imaging device 15 is made of a silicon plate wafer, and is, for example, a CCD type, a CMOS type, or the like, and converts received light into an electric signal according to its intensity. A light receiving section 16 which is a portion for receiving the photographed light is arranged on the surface of the solid-state imaging device 15. Form.

Next, as shown in FIG. 1D, the wiring board 11 to which the gold bumps 14 are bonded is placed on a heatable stage (not shown), and the light receiving section 1 is placed in the opening 12 of the wiring board 11.
The solid-state imaging device 15 is set so that the front surface 6 faces. Then
Ultrasonic waves and pressure are applied to the solid-state imaging device 15 from above the solid-state imaging device 15, and the electrode pads 17 of the solid-state imaging device 15 and the gold bumps 14 are metal-bonded. The stage temperature at this time depends on the bonding conditions at the time of heating, but is, for example, about room temperature to about 150 ° C. The wiring board 11 and the solid-state imaging device 15 are electrically connected via the gold bumps 14 by the metal bonding, and the wiring board 1 is connected by the metal bonding.
The solid-state imaging device package 18 is formed by joining the solid-state imaging device 1 and the solid-state imaging device 15 in an integrated package state. The package here is, for example, CCD type, C
It protects an LSI chip including a solid-state imaging device such as a MOS type, and has a role of mediating connection between an LSI in μm unit and a printed board in mm unit.

Next, the operation of the solid-state imaging device package 18 will be briefly described. Light passing through the opening 12 is received by the light-receiving portion 16, and the light received by the light-receiving portion 16 is converted into an electric signal by the solid-state imaging device 15. Is converted to Then
The converted electric signal is applied to the wiring board 11 via the gold bump 14.
And output from the wiring board 11 to the outside through terminals (not shown) or the like.

Next, an example of mounting the solid-state imaging device package 18 manufactured by the manufacturing process shown in FIG. 1 will be described. FIG. 2 is a diagram showing a cross section of the solid-state imaging device module 19 on which the lens and the like of the solid-state imaging device package 18 are mounted. Explaining the configuration, the solid-state imaging device module 19 has a solid-state imaging device package 18, and a transparent material such as glass is provided on the opposite surface of the solid-state imaging device 15 with the wiring board 11 interposed therebetween. A sealing material 20 is provided, and the sealing material 20 seals the opening 12 of the wiring board 11 on the opposite side of the solid-state imaging device 15 using an adhesive. The sealing material 20 is made of transparent glass or the like, and is capable of transmitting light to the light receiving unit 16 of the solid-state imaging device package 18 and protecting the light receiving unit 16 from adhesion of dust and moisture. A lens barrel 21 is disposed on the daylighting surface side of the sealing material 20, and an optical window 22 through which light can pass is formed in the lens barrel 21. The lens barrel 21 has a lens 23 inside, and the lens 23 is
The incident light passing through 2 is focused on the light receiving unit 16 of the solid-state imaging device 15.

On the other hand, by applying a sealing resin 24 around the solid-state imaging device 15 joined to the wiring board 11, the solid-state imaging device package 18 is resin-sealed. The bonding with the image sensor 15 is reinforced. An epoxy resin or the like is used for the sealing resin 24,
For example, the solid-state imaging device 15 is tightly covered by a transfer molding method or the like.

The wiring board 11 of the solid-state imaging device package 18
Includes components such as ICs, chip components, and connectors that integrate basic functions such as drive circuits and video signal processing circuits.
Is attached. The attachment of the component 25 such as an IC, a chip component, and a connector has various states depending on the embodiment such as the number, size, and attachment position of the component.

The solid-state image pickup device package 18 is mounted by the structure of the seal member 19, the lens barrel 20, and the components 24 such as ICs, chip components and connectors.
The solid-state imaging device module 19 is formed.

Next, the operation of the solid-state image sensor module 19 will be briefly described. Light incident on an optical window 22 formed in a lens barrel 21 is transmitted by a lens 23 to the solid-state image sensor 15.
Is formed on the light receiving section 16 of the image forming apparatus. The light focused on the light receiving unit 16 is converted into an electric signal by the solid-state imaging device 15, and the converted electric signal is sent from the solid-state imaging device 15 to the wiring board 11 via the gold bump 14. The transmitted electric signal is subjected to video signal processing and the like by a component 25 such as an IC, a chip component and a connector attached to the wiring board 11.

According to this embodiment, the gold bumps 14 are formed on the pads 13 on the surface of the wiring board 11 in the manufacturing process of the solid-state imaging device package 18. for that reason,
The step of mounting the light receiving section 16 of the solid-state imaging device 15 upward and forming the gold bumps 14 on the electrode pads 17 formed on the solid-state imaging device 15 is eliminated. Therefore, the light receiving unit 1
6 greatly reduces the probability of foreign matter or the like adhering to the light receiving unit 1
Black spot defects due to the attachment of foreign matter and the like to the surface 6 are reduced. In the step of forming the gold bumps 14 on the pads 13 of the wiring board 11, the gold bumps 14 can be conveyed in a unit of a collective wiring board in which several tens of the wiring boards 11 are arranged. Therefore, the number of times the wiring board 11 is transported is reduced to several tenths, and the tact time of the process can be reduced. Further, ultrasonic waves and pressure are applied on the electrode pads 17 of the solid-state imaging device 15 because the solid-state imaging device 15 and the wiring board 1
1 is performed only once during the ultrasonic flip chip bonding. Therefore, damage to the electrode pad 17 of the solid-state imaging device 15 due to ultrasonic waves and pressure is reduced by half, and quality reliability is improved.

It should be noted that the specification or examples of various details and the examples of numerical values, character strings, and other symbols in the above description are merely reference for clarifying the idea of the present invention, and all or one of them is referred to. It is obvious that the concept of the present invention is not limited by the parts. In addition, well-known techniques, well-known procedures, well-known architectures, and well-known circuit configurations will not be described in detail, but this is also for the sake of brevity, and all or a part of these well-known matters will be described. It is not intentionally excluded. Such a well-known matter can be known to those skilled in the art at the time of filing the present invention, and is therefore included in the above description.

[0021]

According to the first aspect of the present invention, an opening through which light can pass is formed in a wiring board on which wiring is formed, and a pad is formed at an end of the wiring board on the opening side. Since the bumps are formed on the pads of the wiring board, the light receiving portion of the solid-state imaging device is placed upward, and the step of forming the bumps on the pads on the surface of the solid-state imaging device can be eliminated, The process tact can be shortened without causing product failure or failure. According to the second aspect of the present invention, since the wiring board is bonded to the solid-state imaging device by the ultrasonic flip chip method, the manufacturing process can be performed at room temperature to about 150 ° C., and the manufacturing process is complicated. Process time can be shortened without inducing.

[Brief description of the drawings]

FIG. 1 is a process chart showing an example of a method for manufacturing a solid-state imaging device package according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a mounting example in which the solid-state imaging device package according to the embodiment is mounted on a module.

FIG. 3 is a process chart showing a method for manufacturing a solid-state imaging device package according to a conventional technique.

[Explanation of symbols]

11 ... wiring board, 12 ... opening, 13 ... pad, 1
4 ... gold bump, 15 ... solid-state image sensor, 16 ... light receiving section, 17 ... electrode pad

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M118 AA10 AB01 BA10 BA14 FA06 GD03 GD07 HA02 HA25 HA26 HA31 5F044 KK16 LL01 QQ00 5F088 BA16 BB03 EA04 JA01 JA09 JA20

Claims (2)

[Claims] 1. A step of forming an opening through which light can pass through a wiring board on which wiring is formed, and forming a pad at an end of the wiring board on the opening side; and forming a bump on a pad of the wiring board. Forming a light-receiving portion for inputting light to a solid-state imaging device that converts light into an electric signal, and forming a pad on a surface side of the solid-state imaging device having the light-receiving portion; Manufacturing the semiconductor device, comprising: arranging the solid-state imaging device so that the light-receiving portion faces the opening; and bonding the pad of the solid-state imaging device to the pad of the wiring board via a bump. Method. 2. The method according to claim 1, wherein the step of bonding the solid-state imaging device to the wiring board is performed using an ultrasonic flip-chip method.