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JP2002339079A - Wafer jig for plating - Google Patents

Wafer jig for plating

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Publication number
JP2002339079A
JP2002339079A JP2001148730A JP2001148730A JP2002339079A JP 2002339079 A JP2002339079 A JP 2002339079A JP 2001148730 A JP2001148730 A JP 2001148730A JP 2001148730 A JP2001148730 A JP 2001148730A JP 2002339079 A JP2002339079 A JP 2002339079A
Authority
JP
Japan
Prior art keywords
wafer
plating
elastic member
mounting plate
upper lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001148730A
Other languages
Japanese (ja)
Inventor
Akihito Tsuda
昭仁 津田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2001148730A priority Critical patent/JP2002339079A/en
Publication of JP2002339079A publication Critical patent/JP2002339079A/en
Withdrawn legal-status Critical Current

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Abstract

(57)【要約】 【課題】めっきに関する処理液の回り込みを防止し、グ
ランド効果の影響を防ぎつつ無電解めっきを可能とする
めっき用ウェハ治具を提供する。 【解決手段】 めっき用ウェハ治具10は、ウェハWF
と電気的に絶縁関係でウェハWF周縁部にかかり裏面全
面を覆う保護用弾性部材11、ウェハWFと互いに電気
的に絶縁関係を保つウェハ載置板12と上蓋部材13、
及びこれらの着脱部14から構成される。ウェハ載置板
12には、保護用弾性部材11が装着されたウェハWF
が配置される。上蓋部材13は、ウェハ周縁部に沿った
保護用弾性部材11との密着部131を有し、半導体ウ
ェハWFの主表面領域を露出させつつウェハ載置板12
の上方から押し付け、四隅付近に設けられた開口にネジ
141が差し込まれ締め具(ネジ)142で締め付ける
形態となる。
(57) [Problem] To provide a wafer jig for plating that prevents electroless plating while preventing a treatment solution relating to plating from flowing around and preventing the influence of a ground effect. SOLUTION: The wafer jig for plating 10 includes a wafer WF.
A protective elastic member 11 which covers the entire periphery of the rear surface of the wafer WF in an electrically insulating relationship with the wafer WF; a wafer mounting plate 12 and an upper lid member 13 which are electrically insulated from the wafer WF;
And these detachable parts 14. A wafer WF on which a protective elastic member 11 is mounted is mounted on a wafer mounting plate 12.
Is arranged. The upper lid member 13 has a close contact portion 131 with the protective elastic member 11 along the peripheral edge of the wafer, and exposes the main surface area of the semiconductor wafer WF while holding the wafer mounting plate 12.
Is pressed from above, screws 141 are inserted into openings provided near the four corners, and tightened with fasteners (screw) 142.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体装置製造に
係り、特に無電解めっき法でバンプ電極を形成する際の
めっき用ウェハ治具に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of semiconductor devices, and more particularly, to a plating jig for forming a bump electrode by an electroless plating method.

【0002】[0002]

【従来の技術】半導体集積回路の高集積化、半導体チッ
プの縮小化が進むと、微細ピッチの端子接続に対応可能
な実装技術が要求される。この要求に対応しやすい実装
技術として、TCP(Tape Carrier Package)等に利用
されるTAB(Tape AutomatedBonding)実装があげら
れる。
2. Description of the Related Art As the degree of integration of semiconductor integrated circuits increases and the size of semiconductor chips decreases, mounting technology that can support terminal connection at a fine pitch is required. As a mounting technology that can easily respond to this request, there is a TAB (Tape Automate Bonding) mounting used for a TCP (Tape Carrier Package) or the like.

【0003】TAB実装においてリード端子はバンプ電
極に接続される。バンプ電極はAuバンプが代表的であ
り、その形成は電解めっき法によるものが一般的であ
る。電解めっき法によるAuバンプ電極の形成方法を以
下に説明する。
In TAB mounting, lead terminals are connected to bump electrodes. The bump electrode is typically an Au bump, and is generally formed by an electrolytic plating method. A method for forming an Au bump electrode by an electrolytic plating method will be described below.

【0004】例えば内部の半導体素子に繋がるAlパッ
ドが電気的接続領域表面を露出させ周囲をパッシベーシ
ョン膜が被覆している。まず、バリアメタル層及び保護
金属層の積層、すなわちアンダーバンプメタル層をスパ
ッタ法により形成する。その後、フォトリソグラフィ技
術によりAlパッドの電気的接続領域及びその周囲部を
露出させたバンプ形成用のレジストを形成する。次に、
このレジストのパターンに従って電解めっき法によりA
uをめっき成長させる。その後、レジストを剥離してか
らめっき成長したAuをマスクにしてアンダーバンプメ
タル層をウェットエッチングする(層の種類数分)。そ
の後はアニールなどを経てAuバンプを形成する。各所
で適宜洗浄工程も入る。
[0004] For example, an Al pad connected to an internal semiconductor element exposes the surface of an electrical connection region, and the periphery is covered with a passivation film. First, a barrier metal layer and a protective metal layer are stacked, that is, an under bump metal layer is formed by a sputtering method. Thereafter, a resist for bump formation is formed by exposing the electrical connection region of the Al pad and its peripheral portion by photolithography. next,
In accordance with the pattern of this resist, A
u is plated and grown. Thereafter, the under bump metal layer is wet-etched using the Au grown by plating after removing the resist as a mask (for the number of types of layers). Thereafter, an Au bump is formed through annealing or the like. A washing step is appropriately performed in each place.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記電
解めっき法によるバンプ形成プロセスは長く、よりいっ
そうの短縮合理化が要求されている。そこで、最近提案
されているのが、無電解めっき法によるバンプ電極の形
成である。
However, the process of forming a bump by the above-described electrolytic plating method is long, and further reduction and rationalization are required. Therefore, recently, formation of a bump electrode by an electroless plating method has been proposed.

【0006】無電解めっき法で形成したバンプ電極は、
アンダーバンプメタル層のスパッタ形成及びエッチング
が省略できる。さらに、めっき成長用のレジスト形成の
省略も期待できる。このようなことから、大幅なプロセ
スの短縮が可能で、安価で納期の早いバンプ電極の形成
が実現されるものとして注目されている。
The bump electrodes formed by the electroless plating method
Sputter formation and etching of the under bump metal layer can be omitted. Further, the omission of formation of a resist for plating growth can be expected. For these reasons, attention has been paid to the fact that the process can be significantly shortened, and the formation of a bump electrode that is inexpensive and has a short delivery time is realized.

【0007】無電解めっき法でバンプ電極を形成するに
あたり、めっき液に漬ける半導体ウェハのグランド効果
が問題になる。例えば、アルミパッド上にバンプ用のめ
っき金属を析出させる際、アルミパッドの電位によって
めっきレートが異なってくるのである。
In forming bump electrodes by electroless plating, a ground effect of a semiconductor wafer immersed in a plating solution becomes a problem. For example, when depositing a plating metal for a bump on an aluminum pad, the plating rate varies depending on the potential of the aluminum pad.

【0008】すなわち、アルミパッドは基板のSiと接
触抵抗を伴って繋がっている。基板のSiはめっき液に
導通し、基板の電子がめっき液に放出されるとアルミパ
ッドの電気的な位置が移動する。
That is, the aluminum pad is connected to Si on the substrate with a contact resistance. The Si of the substrate is conducted to the plating solution, and when the electrons of the substrate are released into the plating solution, the electrical position of the aluminum pad moves.

【0009】アルミパッドはめっきの前処理として、パ
ッド表面にZnを置換する処理、いわゆるジンケート処
理を施す。ジンケート処理はZnイオンの入った処理液
に浸漬し、2Al+3Zn2+→2Al3++3Znの反応
によりZnを置換するものである。
The aluminum pad is subjected to a so-called zincate treatment as a pretreatment for plating, in which the surface of the pad is replaced with Zn. The zincate treatment is to immerse in a treatment liquid containing Zn ions and replace Zn by a reaction of 2Al + 3Zn 2+ → 2Al 3+ + 3Zn.

【0010】このZnの置換がアルミパッドの電位に左
右され、後のめっき金属の析出に影響を及ぼす。すなわ
ち、グランド効果の影響により化学反応のための電子が
減少してしまう結果、イオン化結合が不活性となり、ア
ルミパッド表面上のZnの置換が十分とはいえない状態
になる。
The substitution of Zn depends on the potential of the aluminum pad and affects the deposition of the plating metal later. In other words, the number of electrons for the chemical reaction decreases due to the influence of the ground effect. As a result, the ionized bond becomes inactive, and the substitution of Zn on the surface of the aluminum pad is not sufficient.

【0011】このようなグランド効果の影響を防ぐため
に、ウェハ裏面及び周縁部にレジストを相当量厚く塗布
する措置、または、ウェハ裏面及び周縁部を覆うウェハ
治具の利用が提案されている。すなわち、めっきに関す
る処理液がウェハ周縁部近傍及び裏面に回り込まないよ
うに対策する。
In order to prevent the influence of such a ground effect, measures have been proposed to apply a considerably large amount of resist to the back surface and peripheral portion of the wafer, or to use a wafer jig for covering the back surface and peripheral portion of the wafer. That is, measures are taken so that the processing solution relating to plating does not flow around the wafer periphery and the back surface.

【0012】しかしながら、前者のウェハ裏面へのレジ
スト塗布は、スピンコーターにおける回転テーブルにバ
ンプ形成面であるウェハ主面側をチャック(真空吸着)
して実施される。ウェハ主面側を接触させるのであるか
ら、バンプ形成面を少なからず損傷させる場合がある。
バンプ形成面では微小な傷でも転写されればその後のバ
ンプ電極形成時のめっき成長は正常でなくなる恐れがあ
る。
However, in the former case, the resist is applied to the back surface of the wafer by chucking (vacuum suction) the main surface of the wafer, which is the bump forming surface, on a rotary table in a spin coater.
It will be implemented. Since the wafer main surface is brought into contact, the bump formation surface may be considerably damaged.
If even minute scratches are transferred on the bump formation surface, the plating growth during the subsequent bump electrode formation may not be normal.

【0013】後者のウェハ治具に関しては、電解めっき
の際にウェハ裏面及び周縁部を覆い固定するウェハ治具
と同様の構成を利用することが考えられている。しかし
ながら、めっき液のウェハ裏面への回り込み懸念が依然
として解消されない。
Regarding the latter wafer jig, it has been considered to use the same configuration as that of a wafer jig that covers and fixes the back surface and peripheral portion of the wafer during electrolytic plating. However, the concern of the plating solution wrapping around the back surface of the wafer is still not solved.

【0014】本発明は上記のような事情を考慮してなさ
れたもので、めっきに関する処理液の回り込みを防止
し、グランド効果の影響を防ぎつつ無電解めっきを可能
とするめっき用ウェハ治具を提供しようとするものであ
る。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has an object to provide a plating wafer jig capable of preventing a treatment solution relating to plating from sneaking in and preventing an effect of a ground effect while enabling electroless plating. It is something to offer.

【0015】[0015]

【課題を解決するための手段】本発明に係るめっき用ウ
ェハ治具は、半導体ウェハと電気的に絶縁関係であり、
ウェハ1枚に関しその周縁部にかかり裏面全面を覆う保
護用弾性部材と、前記保護用弾性部材が装着された前記
ウェハが配置されるウェハ載置板と、前記ウェハと電気
的に絶縁関係であり、前記ウェハ周縁部に沿った保護用
弾性部材との密着部を有し前記ウェハ主表面領域を露出
させる上蓋部材と、少なくともめっきに関する処理液が
前記半導体ウェハの露出部以外に回り込まないように前
記ウェハ載置板と上蓋部材を押え付け、前記半導体ウェ
ハを前記保護用弾性部材と共に狭持する複数箇所の着脱
部とを具備したことを特徴とする。
A plating jig according to the present invention is electrically insulated from a semiconductor wafer.
A protective elastic member for covering one peripheral surface of the wafer and covering the entire back surface; a wafer mounting plate on which the wafer to which the protective elastic member is mounted is disposed; and an electrically insulating relationship with the wafer. An upper lid member having a contact portion with a protective elastic member along the wafer peripheral portion and exposing the wafer main surface region, and at least a processing solution relating to plating is prevented from sneaking around other than the exposed portion of the semiconductor wafer. A wafer mounting plate and an upper lid member are pressed down, and a plurality of attachment / detachment portions for holding the semiconductor wafer together with the protective elastic member are provided.

【0016】上記本発明に係るめっき用ウェハ治具によ
れば、保護用弾性部材及びウェハ載置板と上蓋部材の狭
持によって、ウェハ裏面及び周縁部近傍へのレジスト塗
布工程と同等な機能が与えられる。従って、半導体ウェ
ハの主表面側(すなわちバンプ形成面)を損傷させる危
険性のあるウェハ裏面へのレジスト塗布工程をなくせ
る。すなわち、めっきに関する処理液に漬けられても、
ウェハ縁部近傍及び裏面は曝されることはない。これに
よりグランド効果の影響を防げる。
According to the wafer jig for plating according to the present invention, the function equivalent to that of the resist coating step on the back surface of the wafer and the vicinity of the periphery is achieved by the elastic member for protection and the clamping of the wafer mounting plate and the upper lid member. Given. Therefore, it is possible to eliminate the step of applying a resist to the back surface of the semiconductor wafer, which may damage the main surface side (that is, the bump formation surface) of the semiconductor wafer. That is, even if it is immersed in a processing solution for plating,
The vicinity of the wafer edge and the back surface are not exposed. This can prevent the effect of the ground effect.

【0017】本発明に係る他のめっき用ウェハ治具は、
半導体ウェハと電気的に絶縁関係であるウェハ載置板
と、前記ウェハと電気的に絶縁関係であり、前記ウェハ
周縁部に沿うように配され内部に圧空が与えられる保護
用弾性部材と、前記ウェハと電気的に絶縁関係であり、
前記ウェハ周縁部に沿って前記保護用弾性部材と密着し
前記ウェハ主表面領域を露出させる上蓋部材と、少なく
ともめっきに関する処理液が前記半導体ウェハの露出部
以外に回り込まないように前記ウェハ載置板と上蓋部材
を押え付け、前記半導体ウェハを前記保護用弾性部材に
よる圧力を伴って狭持する複数箇所の着脱部とを具備し
たことを特徴とする。
Another plating wafer jig according to the present invention comprises:
A wafer mounting plate that is electrically insulated from the semiconductor wafer, a protective elastic member that is electrically insulated from the wafer, and that is arranged along the periphery of the wafer and is provided with compressed air therein; Electrically insulated from the wafer,
An upper lid member that is in close contact with the protective elastic member along the wafer peripheral portion to expose the wafer main surface region, and the wafer mounting plate so that at least a processing solution relating to plating does not flow to an exposed portion of the semiconductor wafer other than the exposed portion. And a plurality of attachment / detachment sections for holding down the upper lid member and holding the semiconductor wafer with pressure by the elastic member for protection.

【0018】上記本発明に係るめっき用ウェハ治具によ
れば、保護用弾性部材による圧力及び、ウェハ載置板と
上蓋部材の狭持を有する。これにより、めっき液のウェ
ハ裏面への侵入はウェハ周縁部でほぼ確実に阻止され
る。従って、半導体ウェハの主表面側(すなわちバンプ
形成面)を損傷させる危険性のあるウェハ裏面へのレジ
スト塗布工程をなくせる。すなわち、めっきに関する処
理液に漬けられても、ウェハ縁部近傍及び裏面は曝され
ることはない。これによりグランド効果の影響を防げ
る。
According to the wafer jig for plating according to the present invention, the pressure by the protective elastic member and the holding of the wafer mounting plate and the upper lid member are provided. As a result, the intrusion of the plating solution into the back surface of the wafer is almost certainly prevented at the periphery of the wafer. Therefore, it is possible to eliminate the step of applying a resist to the back surface of the semiconductor wafer, which may damage the main surface side (that is, the bump formation surface) of the semiconductor wafer. That is, even when immersed in a processing solution for plating, the vicinity of the wafer edge and the back surface are not exposed. This can prevent the effect of the ground effect.

【0019】なお、保護用弾性部材の圧空加圧状態が確
認あるいは把握できればなお良く、保護用弾性部材の圧
空加圧状態を検出可能な圧力ゲージをさらに具備したこ
とを特徴とする。
It is more preferable that the pressurized air pressure state of the protective elastic member can be confirmed or grasped, and a pressure gauge capable of detecting the pressurized air pressure state of the protective elastic member is further provided.

【0020】また、ウェハ載置板と上蓋部材の密着部に
さらに弾性部材が設けられていることを特徴とする。さ
らに、ウェハ載置板と上蓋部材の密着部に互いに嵌合う
構造が付加されていることを特徴とする。これにより、
ウェハ載置板と上蓋部材の密着性は高まる。
Further, an elastic member is further provided at a contact portion between the wafer mounting plate and the upper lid member. Further, a structure is provided in which the wafer mounting plate and the upper lid member are fitted to each other in a close contact portion. This allows
The adhesion between the wafer mounting plate and the upper lid member is increased.

【0021】[0021]

【発明の実施の形態】図1(a),(b)は、それぞれ
本発明の第1実施形態に係るめっき用ウェハ治具の構成
を示しており、(a)は概観平面図、(b)は(a)図
中の1B−1B線に沿う断面図である。
1 (a) and 1 (b) show the configuration of a plating wafer jig according to a first embodiment of the present invention, wherein (a) is an outline plan view and (b) () Is a sectional view taken along line 1B-1B in FIG.

【0022】めっき用ウェハ治具10は、半導体ウェハ
WFと電気的に絶縁関係でウェハWF周縁部にかかり裏
面全面を覆う保護用弾性部材11、ウェハWFと互いに
電気的に絶縁関係を保つウェハ載置板12と上蓋部材1
3、及びこれらの着脱部14から構成される。
The plating wafer jig 10 is electrically insulated from the semiconductor wafer WF, and covers the peripheral portion of the wafer WF so as to cover the entire rear surface. Placement plate 12 and upper lid member 1
3 and these detachable parts 14.

【0023】保護用弾性部材11は、ウェハWF1枚に
関しその周縁部にかかり裏面全面を覆う底部のあるゴム
状シールパッキンである。ウェハ載置板12と上蓋部材
13は、硬質の樹脂板(例えばポリテトラフルオロエチ
レンすなわちテフロン(登録商標)製の板)で構成され
る。
The protective elastic member 11 is a rubber-like seal packing having a bottom covering one peripheral surface of one wafer WF and covering the entire back surface. The wafer mounting plate 12 and the upper lid member 13 are formed of a hard resin plate (for example, a plate made of polytetrafluoroethylene, that is, Teflon (registered trademark)).

【0024】ウェハ載置板12には、保護用弾性部材1
1が装着されたウェハWFが配置される。上蓋部材13
は、ウェハ周縁部に沿った保護用弾性部材11との密着
部131を有し、半導体ウェハWFの主表面領域を露出
させつつウェハ載置板12の上方から押し付ける形態と
なる。
The protective elastic member 1 is provided on the wafer mounting plate 12.
The wafer WF on which the wafer 1 is mounted is arranged. Upper lid member 13
Has a contact portion 131 with the protective elastic member 11 along the wafer peripheral portion, and is configured to be pressed from above the wafer mounting plate 12 while exposing the main surface area of the semiconductor wafer WF.

【0025】着脱部14は、例えばウェハ載置板12の
四隅付近に設けられた開口にネジ141が差し込まれ締
め具(ネジ)142で締め付ける構成であり、ウェハ載
置板12と上蓋部材13でウェハWFを保護用弾性部材
11と共に狭持し固定する。ネジ141,142はいず
れもポリテトラフルオロエチレンすなわちテフロン(登
録商標)製の部材を用いる。
The attachment / detachment section 14 has a configuration in which screws 141 are inserted into openings provided in the vicinity of the four corners of the wafer mounting plate 12 and fastened with fasteners (screw) 142. The wafer WF is held and fixed together with the protective elastic member 11. Each of the screws 141 and 142 uses a member made of polytetrafluoroethylene, that is, Teflon (registered trademark).

【0026】ネジ141,142の締め付けによって、
密着部131における保護用弾性部材11への圧力が大
きくなる。これにより、めっきに関する処理液(ジンケ
ート処理液やめっき液等)がウェハWF主表面の露出部
以外に回り込まないようにする。
By tightening the screws 141 and 142,
The pressure on the protective elastic member 11 at the contact portion 131 increases. This prevents a processing solution relating to plating (a zincate processing solution, a plating solution, or the like) from flowing around the exposed portion of the main surface of the wafer WF.

【0027】このような構成のめっき用ウェハ治具10
は、図示しないが所定数準備され、各々ウェハが納めら
れてウェハキャリア(バスケット)に収容される。そし
て、ウェハキャリアごと、図示しないがめっき工程の前
処理としてZnイオンの入った処理液に浸漬するジンケ
ート処理(パッド表面にZnを置換)、次に無電解めっ
き処理工程に伴なう所定の処理液(めっき液)に浸漬
し、無電解めっきバンプを形成する。
The plating wafer jig 10 having the above-described structure is used.
Although not shown, a predetermined number is prepared, each of which is stored in a wafer carrier (basket). Then, although not shown, a zincate treatment (replacement of Zn on the pad surface) for immersion in a treatment solution containing Zn ions as a pretreatment of a plating process (not shown) for each wafer carrier, and a predetermined treatment accompanying the electroless plating treatment Immersion in a solution (plating solution) to form electroless plating bumps.

【0028】上記第1実施形態の構成によれば、めっき
用ウェハ治具10によって、従来、めっき工程前に必要
としていたウェハ裏面及び周縁部近傍へのレジスト塗布
工程と同等な機能を有する。従って、半導体ウェハWF
の主表面側(すなわちバンプ形成面)を損傷させる危険
性のあるウェハ裏面へのレジスト塗布工程をなくするこ
とができる。
According to the configuration of the first embodiment, the plating wafer jig 10 has a function equivalent to that of the resist coating step on the back surface of the wafer and the vicinity of the peripheral portion, which was conventionally required before the plating step. Therefore, the semiconductor wafer WF
It is possible to eliminate the step of applying a resist to the back surface of the wafer, which may damage the main surface side (that is, the bump formation surface) of the wafer.

【0029】すなわち、ウェハWFの周縁部から裏面一
体型の保護用弾性部材11及びウェハ載置板12と上蓋
部材13の狭持により、めっきに関する処理液に漬けら
れてもウェハ周縁部近傍及び裏面は曝されない。これに
よりグランド効果の影響を防止することができる。
That is, since the protective elastic member 11 integrated with the back surface and the wafer mounting plate 12 and the upper lid member 13 are sandwiched from the peripheral portion of the wafer WF, the vicinity of the peripheral portion of the wafer and the rear surface even when immersed in a processing solution relating to plating. Is not exposed. Thus, the effect of the ground effect can be prevented.

【0030】図2(a),(b)は、それぞれ本発明の
第2実施形態に係るめっき用ウェハ治具の構成を示して
おり、(a)は概観平面図、(b)は(a)図中の2B
−2B線に沿う断面図である。
FIGS. 2A and 2B show the configuration of a plating wafer jig according to a second embodiment of the present invention, wherein FIG. 2A is an outline plan view and FIG. ) 2B in the figure
It is sectional drawing which follows the -2B line.

【0031】めっき用ウェハ治具20は、半導体ウェハ
WFと電気的に絶縁関係でウェハWF周縁部に沿うよう
に配され内部に圧空が与えられる保護用弾性部材21、
ウェハWFと互いに電気的に絶縁関係を保つウェハ載置
板22と上蓋部材23、及びこれらの着脱部24から構
成される。
The plating wafer jig 20 is provided along the periphery of the wafer WF in an electrically insulated relationship with the semiconductor wafer WF, and is provided with a protective elastic member 21 to which compressed air is applied inside.
It is composed of a wafer mounting plate 22 and an upper lid member 23, which are electrically insulated from the wafer WF, and an attachment / detachment portion 24 thereof.

【0032】保護用弾性部材21は、内部に空気(また
は特定のガス)を入れるための圧空供給部211を有し
たチューブ、例えばドーナツ状のポリテトラフルオロエ
チレン系(テフロン(登録商標)系)のゴムであり、ウ
ェハWFの周縁部近傍に配される大きさを有する。ウェ
ハ載置板22と上蓋部材23は、硬質の樹脂板(例えば
ポリテトラフルオロエチレン(テフロン(登録商標))
製)で構成される。あるいは、図示しないがステンレス
製の金属板に絶縁コーティング処理したものを用いても
よい。
The protective elastic member 21 is a tube having a compressed air supply section 211 for introducing air (or a specific gas) therein, for example, a donut-shaped polytetrafluoroethylene (Teflon (registered trademark)). It is rubber and has a size arranged near the periphery of the wafer WF. The wafer mounting plate 22 and the upper lid member 23 are made of a hard resin plate (for example, polytetrafluoroethylene (Teflon (registered trademark)).
Manufactured). Alternatively, although not shown, a metal plate made of stainless steel and subjected to insulation coating may be used.

【0033】ウェハ載置板22にはウェハWFが配置さ
れる。上蓋部材23は、ウェハ周縁部に沿う保護用弾性
部材21の位置決めを兼ねた密着部231を有し、半導
体ウェハWFの主表面領域を露出させつつウェハ載置板
22の上方から押し付ける形態となる。
The wafer WF is arranged on the wafer mounting plate 22. The upper lid member 23 has a contact portion 231 that also serves to position the protective elastic member 21 along the peripheral edge of the wafer, and is configured to be pressed from above the wafer mounting plate 22 while exposing the main surface area of the semiconductor wafer WF. .

【0034】着脱部24は、例えばウェハ載置板22の
四隅付近に設けられた開口にネジ241が差し込まれ締
め具(ネジ)242で締め付ける構成であり、ウェハ載
置板22と上蓋部材23でウェハWFを保護用弾性部材
11と共に狭持し固定する。ネジ241,242はいず
れもポリテトラフルオロエチレンすなわちテフロン(登
録商標)製の部材を用いる。
The attachment / detachment section 24 has a structure in which screws 241 are inserted into openings provided near the four corners of the wafer mounting plate 22 and fastened with fasteners (screws) 242. The wafer WF is held and fixed together with the protective elastic member 11. Each of the screws 241 and 242 uses a member made of polytetrafluoroethylene, that is, Teflon (registered trademark).

【0035】保護用弾性部材21内部への圧空付与とネ
ジ241,242の締め付けによって、密着部231に
おける保護用弾性部材21への圧力が大きくなる。これ
により、めっきに関する処理液(ジンケート処理液やめ
っき液等)がウェハWF主表面の露出部以外に回り込ま
ないようにする。
By applying compressed air to the inside of the protective elastic member 21 and tightening the screws 241, 242, the pressure on the protective elastic member 21 at the contact portion 231 increases. This prevents a processing solution relating to plating (a zincate processing solution, a plating solution, or the like) from flowing around the exposed portion of the main surface of the wafer WF.

【0036】図3(a),(b),(c)は、それぞれ
図2の構成の保護用弾性部材21に関する圧空供給形態
の一例を示す概略図である。図3(a)において、圧空
供給部211は、ウェハ載置板22と上蓋部材23をネ
ジ241,242である程度締め付ける。次に、圧空供
給部211から空気を入れ、ウェハWF周縁部に適当な
加圧ができた後、圧空供給部211をバルブ、キャップ
等の閉塞部材31で塞ぐ。必要ならその後、ネジ24
1,242でさらに増し締めしてもよい。このような形
態で、保護用弾性部材21によるウェハWF周縁部への
圧力を大きくし、めっきに関する処理液がウェハWF主
表面の露出部以外に回り込まないようにする。
FIGS. 3 (a), 3 (b) and 3 (c) are schematic diagrams each showing an example of a compressed air supply mode for the protective elastic member 21 having the configuration of FIG. In FIG. 3A, the compressed air supply unit 211 tightens the wafer mounting plate 22 and the upper lid member 23 to some extent with screws 241, 242. Next, after air is introduced from the compressed air supply unit 211 and appropriate pressurization is performed on the peripheral portion of the wafer WF, the compressed air supply unit 211 is closed with a closing member 31 such as a valve or a cap. If necessary, screw 24
Further tightening may be performed at 1,242. In such a form, the pressure on the peripheral portion of the wafer WF by the protective elastic member 21 is increased, so that the processing solution relating to plating does not flow to the exposed portion of the main surface of the wafer WF.

【0037】図3(b)において、圧空供給部211
は、ウェハ載置板22と上蓋部材23をネジ241,2
42である程度締め付ける。次に、圧空供給部211に
接続管32を取り付けて図示しない圧空の供給元からの
空気を入れ、ウェハWF周縁部に適当な加圧をかけ続け
る。
In FIG. 3B, the compressed air supply unit 211
Are the screws 241 and 241 on the wafer mounting plate 22 and the upper lid member 23.
At 42, it is tightened to some extent. Next, the connection pipe 32 is attached to the compressed air supply unit 211, air is supplied from a compressed air supply source (not shown), and appropriate pressure is continuously applied to the peripheral portion of the wafer WF.

【0038】つまり、前記図3(a)のように圧空供給
部211を塞ぐことなく、適当な圧空加圧を持続させて
おく。このような形態で、保護用弾性部材21によるウ
ェハWF周縁部への圧力を大きくし、めっきに関する処
理液がウェハWF主表面の露出部以外に回り込まないよ
うにする。
That is, appropriate pressurized air pressurization is maintained without closing the pressurized air supply unit 211 as shown in FIG. In such a form, the pressure applied to the peripheral portion of the wafer WF by the protective elastic member 21 is increased so that the processing solution relating to plating does not spill to portions other than the exposed portion of the main surface of the wafer WF.

【0039】図3(c)において、圧空供給部211近
傍に圧空加圧状態を検出可能な圧力ゲージ33を配備し
ている。圧力ゲージ33は上記図3(a)、図3(b)
いずれの形態にも付加することができる。これにより、
ウェハWF周縁部に適当な加圧がなされているかどうか
常に認識、把握できるようになる。
In FIG. 3C, a pressure gauge 33 capable of detecting a pressurized air pressurized state is provided near the pressurized air supply unit 211. 3 (a) and 3 (b).
It can be added to any form. This allows
This makes it possible to always recognize and grasp whether an appropriate pressurization is applied to the peripheral portion of the wafer WF.

【0040】なお、図3(b)の形態に付加する場合、
圧空供給部211近傍に圧力ゲージ33を設ける構成に
代えて、図示しない圧空の供給元の共有部に圧力ゲージ
33を設ける構成としてもよい。
In addition, when adding to the form of FIG.
Instead of the configuration in which the pressure gauge 33 is provided in the vicinity of the compressed air supply unit 211, a configuration in which the pressure gauge 33 is provided in a shared portion of a compressed air supply source (not shown) may be employed.

【0041】このような図3(a)〜(c)のうちの一
形態を採用する図2の構成のめっき用ウェハ治具20
は、図示しないが所定数準備され、各々ウェハが納めら
れてウェハキャリア(バスケット)に収容される。そし
て、ウェハキャリアごと、図示しないがめっき工程の前
処理としてZnイオンの入った処理液に浸漬するジンケ
ート処理(パッド表面にZnを置換)、次に無電解めっ
き処理工程に伴なう所定の処理液(めっき液)に浸漬
し、無電解めっきバンプを形成する。
The wafer jig 20 for plating shown in FIG. 2 employing one of the forms shown in FIGS. 3A to 3C.
Although not shown, a predetermined number is prepared, each of which is stored in a wafer carrier (basket). Then, although not shown, a zincate treatment (replacement of Zn on the pad surface) for immersion in a treatment solution containing Zn ions as a pretreatment of a plating process (not shown) for each wafer carrier, and a predetermined treatment accompanying the electroless plating treatment Immersion in a solution (plating solution) to form electroless plating bumps.

【0042】上記第2実施形態の構成によっても、前記
第1実施形態の構成と同様の効果が得られる。すなわ
ち、めっき用ウェハ治具20によって、従来、めっき工
程前に必要としていたウェハ裏面及び周縁部近傍へのレ
ジスト塗布工程を省略できる。
According to the configuration of the second embodiment, the same effect as the configuration of the first embodiment can be obtained. That is, the plating wafer jig 20 can omit the step of applying the resist to the back surface of the wafer and the vicinity of the peripheral portion, which has been required before the plating step.

【0043】圧空を利用してウェハWFの周縁部を密閉
する保護用弾性部材21及びウェハ載置板12と上蓋部
材13の狭持により、めっきに関する処理液のウェハ裏
面への侵入はウェハ周縁部でほぼ確実に阻止される。こ
れによりグランド効果の影響を防止することができる。
The protective elastic member 21 for sealing the peripheral edge of the wafer WF using the compressed air and the holding of the wafer mounting plate 12 and the upper lid member 13 prevent the processing liquid relating to plating from entering the rear surface of the wafer. Is almost certainly blocked. Thus, the effect of the ground effect can be prevented.

【0044】図4は、図2(b)の構成を例にとって示
す第1の変形例である。ウェハ載置板22と上蓋部材2
3の密着部にさらに樹脂系の弾性部材41が設けられて
いてもよい。これにより、ウェハ載置板22と上蓋部材
23の密着性はいっそう増し、ウェハ載置板22と上蓋
部材23の間からのめっきに関する処理液の侵入をさら
に防ぐ。
FIG. 4 is a first modification showing the configuration of FIG. 2B as an example. Wafer mounting plate 22 and upper lid member 2
A resin-based elastic member 41 may be further provided at the close contact portion 3. Thereby, the adhesion between the wafer mounting plate 22 and the upper lid member 23 is further increased, and the intrusion of the processing solution relating to plating from between the wafer mounting plate 22 and the upper lid member 23 is further prevented.

【0045】図5は、図2(b)の構成を例にとって示
す第2の変形例である。ウェハ載置板22と上蓋部材2
3の密着部にさらに樹脂系の弾性部材51が設けられ、
かつ互いに嵌合う構造(嵌合部52)が付加されていて
もよい。これにより、ウェハ載置板22と上蓋部材23
の密着性はいっそう増し、ウェハ載置板22と上蓋部材
23の間からのめっきに関する処理液の侵入をさらに防
ぐ。また、嵌合部52の構成を付加することは、ウェハ
載置板22と上蓋部材23の位置決めにも寄与する。な
お、嵌合部52の形態はこの他様々考えられる。
FIG. 5 is a second modification showing the configuration of FIG. 2B as an example. Wafer mounting plate 22 and upper lid member 2
3, a resin-based elastic member 51 is further provided at the contact portion.
Further, a structure (fitting portion 52) that fits each other may be added. Thereby, the wafer mounting plate 22 and the upper lid member 23
The adhesion of the plating solution is further increased, and the intrusion of the processing solution relating to plating from between the wafer mounting plate 22 and the upper lid member 23 is further prevented. The addition of the configuration of the fitting portion 52 also contributes to the positioning of the wafer mounting plate 22 and the upper lid member 23. It should be noted that various other forms of the fitting portion 52 can be considered.

【0046】上記図4、図5の構成は、もちろん前記第
1実施形態の図1の構成に付加されてもよい(図示せ
ず)。これにより、ウェハ載置板12と上蓋部材13の
密着性はいっそう増し、過剰な締め付けからの保護にも
寄与する。
The configurations shown in FIGS. 4 and 5 may be added to the configuration shown in FIG. 1 of the first embodiment (not shown). Thereby, the adhesion between the wafer mounting plate 12 and the upper lid member 13 is further increased, which also contributes to protection from excessive tightening.

【0047】なお、上記各実施形態のウェハ載置板と上
蓋部材の着脱部は、着脱部13,23のような、締め付
けネジの構成に限らない。めっきに関する処理液がウェ
ハWFの露出部以外に回り込まないようにウェハ載置板
と上蓋部材を狭持できればよく、他の締め付け構成も十
分考えられる。
Note that the attachment / detachment portion between the wafer mounting plate and the upper lid member in each of the above embodiments is not limited to the configuration of the tightening screw like the attachment / detachment portions 13 and 23. It is sufficient that the wafer mounting plate and the upper lid member can be held so that the processing solution relating to plating does not sneak around other than the exposed portion of the wafer WF, and other fastening configurations are also conceivable.

【0048】[0048]

【発明の効果】以上説明したように本発明によれば、半
導体ウェハの主表面側(すなわちバンプ形成面)を損傷
させる危険性のウェハ裏面へのレジスト塗布工程をなく
することができる。半導体ウェハと絶縁関係のウェハ載
置板と保護用弾性部材を伴う上蓋部材との狭持により、
ウェハ縁部近傍及び裏面はめっきに関する処理液に曝さ
れずグランド効果の悪影響は及ばない。この結果、めっ
き液等めっきに関する処理液の回り込みを防止し、グラ
ンド効果の影響を防ぎつつ無電解めっきを可能とする高
信頼性のめっき用ウェハ治具を提供することができる。
As described above, according to the present invention, it is possible to eliminate the step of applying a resist to the back surface of a semiconductor wafer, which has a risk of damaging the main surface side (ie, the bump forming surface) of the semiconductor wafer. By holding the semiconductor wafer and insulation-related wafer mounting plate and the upper lid member with the elastic member for protection,
The vicinity and the back surface of the wafer edge are not exposed to the processing solution relating to plating, and the adverse effect of the ground effect is not exerted. As a result, it is possible to provide a highly reliable plating wafer jig that prevents the treatment solution relating to the plating such as the plating solution from flowing around and prevents the effect of the ground effect while enabling the electroless plating.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a),(b)は、それぞれ本発明の第1実施
形態に係るめっき用ウェハ治具の構成を示しており、
(a)は概観平面図、(b)は(a)図中の1B−1B
線に沿う断面図である。
FIGS. 1 (a) and 1 (b) show a configuration of a plating wafer jig according to a first embodiment of the present invention, respectively.
(A) is an outline plan view, (b) is 1B-1B in (a) figure.
It is sectional drawing which follows a line.

【図2】(a),(b)は、それぞれ本発明の第2実施
形態に係るめっき用ウェハ治具の構成を示しており、
(a)は概観平面図、(b)は(a)図中の2B−2B
線に沿う断面図である。
FIGS. 2A and 2B show the configuration of a plating wafer jig according to a second embodiment of the present invention, respectively.
(A) is an outline plan view, (b) is 2B-2B in (a) figure.
It is sectional drawing which follows a line.

【図3】(a),(b),(c)は、それぞれ図2の構
成の保護用弾性部材に関する圧空供給形態の一例を示す
概略図である。
3 (a), 3 (b) and 3 (c) are schematic diagrams each showing an example of a compressed air supply mode for the protective elastic member having the configuration of FIG.

【図4】図2(b)の構成を例にとって示す第1の変形
例に係る断面図である。
FIG. 4 is a cross-sectional view according to a first modification showing the configuration of FIG. 2B as an example.

【図5】図2(b)の構成を例にとって示す第2の変形
例に係る断面図である。
FIG. 5 is a cross-sectional view according to a second modification showing the configuration of FIG. 2B as an example.

【符号の説明】[Explanation of symbols]

10,20…めっき用ウェハ治具 11,21…保護用弾性部材 12,22…ウェハ載置板 13,23…上蓋部材 131,231…密着部 14,24…着脱部 141,142,241,242…ネジ 211…圧空供給部 31…閉塞部材 32…接続管 33…圧力ゲージ 41,51…弾性部材 52…嵌合部 WF…半導体ウェハ 10, 20 ... Plating wafer jig 11,21 ... Protective elastic member 12,22 ... Wafer mounting plate 13,23 ... Top lid member 131,231 ... Adhesive part 14,24 ... Removable part 141,142,241,242 ... Screw 211 ... Compressed air supply unit 31 ... Closing member 32 ... Connection pipe 33 ... Pressure gauge 41,51 ... Elastic member 52 ... Mating part WF ... Semiconductor wafer

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウェハと電気的に絶縁関係であ
り、ウェハ1枚に関しその周縁部にかかり裏面全面を覆
う保護用弾性部材と、 前記保護用弾性部材が装着された前記ウェハが配置され
るウェハ載置板と、 前記ウェハと電気的に絶縁関係であり、前記ウェハ周縁
部に沿った保護用弾性部材との密着部を有し前記ウェハ
主表面領域を露出させる上蓋部材と、 少なくともめっきに関する処理液が前記半導体ウェハの
露出部以外に回り込まないように前記ウェハ載置板と上
蓋部材を押え付け、前記半導体ウェハを前記保護用弾性
部材と共に狭持する複数箇所の着脱部と、を具備したこ
とを特徴とするめっき用ウェハ治具。
1. A protective elastic member which is electrically insulated from a semiconductor wafer, covers a peripheral portion of one wafer and covers the entire back surface, and the wafer having the protective elastic member mounted thereon is disposed. A wafer mounting plate, an upper lid member electrically insulated from the wafer, having a contact portion with the protective elastic member along the wafer peripheral portion, and exposing the wafer main surface region; A plurality of attachment / detachment sections for pressing the wafer mounting plate and the upper lid member so that the processing liquid does not sneak around other than the exposed portion of the semiconductor wafer, and holding the semiconductor wafer together with the protective elastic member. A plating jig for plating.
【請求項2】 半導体ウェハと電気的に絶縁関係である
ウェハ載置板と、 前記ウェハと電気的に絶縁関係であり、前記ウェハ周縁
部に沿うように配され内部に圧空が与えられる保護用弾
性部材と、 前記ウェハと電気的に絶縁関係であり、前記ウェハ周縁
部に沿って前記保護用弾性部材と密着し前記ウェハ主表
面領域を露出させる上蓋部材と、 少なくともめっきに関する処理液が前記半導体ウェハの
露出部以外に回り込まないように前記ウェハ載置板と上
蓋部材を押え付け、前記半導体ウェハを前記保護用弾性
部材による圧力を伴って狭持する複数箇所の着脱部と、
を具備したことを特徴とするめっき用ウェハ治具。
2. A wafer mounting plate electrically insulated from a semiconductor wafer, and a protection plate electrically insulated from the wafer and arranged along a peripheral portion of the wafer and provided with compressed air therein. An elastic member, an upper insulating member that is electrically insulated from the wafer, is in close contact with the protective elastic member along the periphery of the wafer, and exposes the wafer main surface area, A plurality of attachment / detachment parts for holding down the wafer mounting plate and the upper lid member so as not to go around other than the exposed part of the wafer, and holding the semiconductor wafer with pressure by the protective elastic member,
A wafer jig for plating, comprising:
【請求項3】 前記保護用弾性部材の圧空加圧状態を検
出可能な圧力ゲージをさらに具備したことを特徴とする
請求項2記載のめっき用ウェハ治具。
3. The wafer jig for plating according to claim 2, further comprising a pressure gauge capable of detecting a pressurized and pressurized state of said protective elastic member.
【請求項4】 前記ウェハ載置板と上蓋部材の密着部に
さらに弾性部材が設けられていることを特徴とする請求
項1〜3いずれか一つに記載のめっき用ウェハ治具。
4. The plating jig according to claim 1, wherein an elastic member is further provided at a contact portion between the wafer mounting plate and the upper lid member.
【請求項5】 前記ウェハ載置板と上蓋部材の密着部に
互いに嵌合う構造が付加されていることを特徴とする請
求項1〜4いずれか一つに記載のめっき用ウェハ治具。
5. The plating wafer jig according to claim 1, further comprising a structure that fits into a close contact portion between the wafer mounting plate and the upper lid member.
JP2001148730A 2001-05-18 2001-05-18 Wafer jig for plating Withdrawn JP2002339079A (en)

Priority Applications (1)

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Publications (1)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718350B2 (en) 2007-02-21 2010-05-18 Tdk Corporation Method of metal plating by using frame
JP2014065953A (en) * 2012-09-27 2014-04-17 Shin Etsu Polymer Co Ltd Support jig for plating semiconductor wafer
KR20150123779A (en) 2014-02-25 2015-11-04 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Method for manufacturing power device
JPWO2019130859A1 (en) * 2017-12-27 2020-12-17 株式会社カネカ Manufacturing method of photoelectric conversion element, plating jig, plating equipment
CN114351224A (en) * 2021-03-18 2022-04-15 青岛惠芯微电子有限公司 Electroplating hanger and electroplating device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718350B2 (en) 2007-02-21 2010-05-18 Tdk Corporation Method of metal plating by using frame
JP2014065953A (en) * 2012-09-27 2014-04-17 Shin Etsu Polymer Co Ltd Support jig for plating semiconductor wafer
KR20150123779A (en) 2014-02-25 2015-11-04 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Method for manufacturing power device
JPWO2019130859A1 (en) * 2017-12-27 2020-12-17 株式会社カネカ Manufacturing method of photoelectric conversion element, plating jig, plating equipment
JP7337703B2 (en) 2017-12-27 2023-09-04 株式会社カネカ Method for manufacturing photoelectric conversion element, jig for plating, and plating apparatus
CN114351224A (en) * 2021-03-18 2022-04-15 青岛惠芯微电子有限公司 Electroplating hanger and electroplating device
CN114351224B (en) * 2021-03-18 2023-08-25 青岛惠芯微电子有限公司 Electroplating hanger and electroplating device

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