JP2003098026A - Manufacturing method of capacitance type pressure sensor and capacitance type pressure sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a capacitance type pressure sensor capable of adjusting accurately the pressure in a capacity gap without using a getter material. SOLUTION: Anode junction is performed between a first substrate 1 equipped with a fixed electrode 3 and a second substrate 2 equipped with a movable electrode changing the relative position with the fixed electrode 3 by receiving a pressure to be measured. The capacity gap between the fixed electrode 3 and the movable electrode is communicated with a through hole 1a provided on the first substrate 1 at the junction time. Then, after evacuating a gas in the capacity gap through the first through hole 1a, a terminal 8a of a metal membrane is formed so as to seal the interval between the capacity gap and the through hole 1a.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electrostatic capacitance type pressure sensor for converting a change in measured pressure into a change in electrostatic capacitance and outputting the change, and an electrostatic capacitance type pressure sensor.

[0002]

2. Description of the Related Art Conventionally, two electrodes, a fixed electrode and a movable electrode, are arranged so as to face each other via a capacitance gap, and the movable electrode is relatively displaced with respect to the fixed electrode in accordance with the pressure to be measured. Provides a capacitance-type pressure sensor that converts the difference between the measured pressure and the pressure in the capacitance gap into the capacitance between the fixed electrode and the movable electrode.

In manufacturing this type of electrostatic capacitance type pressure sensor, as shown in Japanese Patent Publication No. 85857/1993 or Japanese Patent No. 2772111, a first substrate having a fixed electrode and a movable electrode are provided. A technique including a step of anodic bonding a provided second substrate in a vacuum is known.
In this manufacturing method, the capacitance gap is sealed at the same time when the first substrate and the second substrate are anodically bonded.

[0004]

By the way, in general, a glass substrate is often used as the first substrate having a fixed electrode, while a silicon substrate is widely adopted as a second substrate having a movable electrode. . That is, when the first substrate and the second substrate are bonded by the above method, glass and silicon are anodically bonded. However, it is known that oxygen is generated when glass and silicon are anodically bonded, and as described above, when the capacity gap is sealed at the same time when the first substrate and the second substrate are bonded, the capacity is reduced. Oxygen may be trapped in the gap.

As a means for avoiding this kind of problem, Japanese Patent Laid-Open No. 11-6778 discloses a method of arranging a getter material in a capacity gap. However, in this method, a getter material is additionally required, and a step of disposing the getter material in the capacity gap is required, which leads to an increase in cost.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a capacitance type pressure sensor capable of accurately setting the pressure in the capacitance gap without using any other means such as a getter material. It is to provide a manufacturing method and a capacitance type pressure sensor.

[0007]

According to a first aspect of the present invention, there is provided a first substrate having a fixed electrode, and a movable electrode facing the fixed electrode via a sealed capacitance gap.
A second substrate bonded to the first substrate and a first terminal and a second terminal electrically connected to the fixed electrode and the movable electrode, respectively. A pressure receiving unit that receives and changes the relative position of the movable electrode with respect to the fixed electrode is provided, and the pressure difference between the pressure in the capacitance gap and the measured pressure is used as the electrostatic capacitance between the movable electrode and the fixed electrode. A method of manufacturing a capacitance-type pressure sensor for converting, wherein the first substrate is provided on a second substrate provided with first and second electrode pads electrically connected to the fixed electrode and the movable electrode, respectively. And the first electrode having through holes at positions corresponding to the second electrode pad
After anodic bonding the substrate of at least one of the through holes and the capacity gap in communication with each other, and then adjusting the ambient pressure so that the pressure in the capacity gap becomes a predetermined pressure, each through hole And a conductive thin film which is electrically connected to the first and second electrode pads and is exposed on the outer surface of the first substrate to form the first and second terminals. It is characterized by forming a film.

According to a second aspect of the invention, there is provided a first aspect having a fixed electrode.
Substrate, a second substrate having a movable electrode facing the fixed electrode via a sealed capacitance gap, and a second substrate bonded to the first substrate, and the fixed electrode of the movable electrode receiving a pressure to be measured. And a plurality of electrode pads provided on one surface of the second substrate on the side of the first substrate and electrically connected to at least the fixed electrode and the movable electrode, respectively. The first
Is a conductive thin film which is electrically connected to the electrode pads through a plurality of through holes respectively provided at positions corresponding to the electrode pads on the substrate and is partially exposed on the outer surface of the first substrate. It is characterized by comprising a plurality of terminals.

According to a third aspect of the present invention, in the second aspect, the capacity gap is filled with an inert gas having a desired pressure.

The invention of claim 4 is the invention of claim 2 or claim 3.
In the invention, a guard electrode surrounding the outer periphery of the fixed electrode is added to the first substrate, the electrode pad, the through hole, and the terminal correspond to the guard electrode, and a part of the terminal is It is characterized in that it is formed so as to seal between the capacitance gap and the through hole.

The invention of claim 5 is the invention of claims 2 to 4.
In the invention described above, a protection member filled in a portion inside the through hole is added to the terminal.

The invention of claim 6 is the invention of claims 2 to 5.
In the invention described above, an IC chip mounted by flip chip mounting is added to the first substrate by using a portion of the terminal exposed on the outer surface of the first substrate.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) As shown in FIG. 2, the capacitance type pressure sensor described in this embodiment is a plate-shaped first substrate 1 having a fixed electrode 3 at the center of one surface.
And a plate-shaped second substrate 2 having a movable electrode 4 facing the fixed electrode 3 are joined together. The first substrate 1 is a glass substrate made of, for example, Pyrex (registered trademark), and the second substrate 2 is made of conductive silicon to which impurities are added at a high concentration. The fixed electrode 3 has a circular shape, and a lead wire 7 extends from a part of the periphery of the fixed electrode 3 in a direction along one side of the first substrate 1. The fixed electrode 3 and the lead wire 7 are formed on the surface of the first substrate 1 facing the second substrate 2 by a thin film of a metal such as chromium. The second substrate 2 is integrally provided with a diaphragm-shaped movable electrode 4 formed in a central portion of a rectangular frame-shaped support frame 2e (see FIG. 6) to be thinner than the support frame 2e. A circular opening 2a is formed on one surface of the second substrate 2.
The bottom surface of the above functions as the movable electrode 4 facing the fixed electrode 3. The fixed electrode 3 and the movable electrode 4 are separated from each other by a distance corresponding to the depth of the depression 2a, and the fixed electrode 3 and the movable electrode 4 face each other via a capacitance gap corresponding to the depth of the depression 2a. Become. The capacity gap is sealed with a predetermined pressure inside. In the present embodiment, since the movable electrode 4 is formed of the substrate material of the second substrate 2, the movable electrode 4
In, the surface opposite to the surface facing the fixed electrode 3 functions as a pressure receiving portion that receives the pressure to be measured. That is, when the measured pressure is received by the pressure receiving portion which is one surface of the movable electrode 4, the movable electrode 4 is displaced with respect to the fixed electrode 3 in accordance with the pressure difference between the internal pressure of the capacitance gap and the measured pressure, and the fixed electrode. The electrostatic capacitance between 3 and the movable electrode 4 will change. In other words, the measured pressure can be converted into an electrostatic capacitance.

Around the recess 2a of the second substrate 2, two recesses 2b and 2c which are open in a rectangular shape are arranged side by side, and one recess 2b is continuous with the recess 2a via a connecting groove 2d. An electrode pad 6a made of a thin film of a metal such as aluminum is formed on the bottom surface of the recess 2b with an insulating film 5 made of a silicon oxide film interposed therebetween. First substrate 1 and second
The lead wire 7 is housed in the connection groove 2d in a state where the lead wire 7 is joined to the substrate 2 of the electrode pad 6
contact a. Therefore, the electrode pad 6a is electrically connected to the fixed electrode 3. On the other hand, the insulating film 5 made of a silicon oxide film is formed on a part of the bottom surface of the depression 2c, and the electrode pad 6b made of a thin film of a metal such as aluminum.
Are formed so as to extend over the bottom surface of the recess 2c between the portion where the insulating film 5 is provided and the portion where the insulating film 5 is not provided. That is, the electrode pad 6b is electrically connected to the second substrate 2, and as a result, electrically connected to the movable electrode 4.

In the first substrate 1, each electrode pad 6a,
6b, the electrode pads 6a,
Terminals 8a and 8b (see FIG. 1) which are electrically connected to 6b and are partially exposed on the outer surface of the first substrate 1 are provided. The terminals 8a, 8b are formed of a thin film of a metal such as aluminum, and penetrate through the first substrate 1 in the thickness direction, and the through holes 1a, 1b are formed in the portions corresponding to the electrode pads 6a, 6b. Through each of the electrode pads 6a and 6b. That is, the terminals 8a and 8b are the surfaces of the electrode pads 6a and 6b, the through holes 1
It is formed at a portion that extends over the inner peripheral surfaces of a and 1b and a part of the outer surface (upper surface of FIG. 1) of the first substrate 1. With this configuration,
The terminal 8a is connected to the fixed electrode 3 via the electrode pad 6a and the lead wire 7, and the terminal 8b is connected to the movable electrode 4 via the electrode pad 8b. Each through hole 1
a and 1b are formed in a tapered shape in which the diameter of the first substrate 1 becomes smaller toward the second substrate 2. Here, in the present embodiment, the recess 2a forming the capacitance gap and the recess 2b provided with the electrode pad 6a communicate with each other through the connection groove 2d, and the recess 2b and the through hole 1a are connected by the terminal 8a. It is sealed. That is, before the formation of the terminal 8a, the capacitance gap and the through hole 1a are in communication with each other, the formation of the terminal 8a seals the capacitance gap, and the external air flows into the capacitance gap.
It employs a configuration that is blocked by a. Below, the outline of the manufacturing method of the above-mentioned electrostatic capacity type pressure sensor is explained, and then a specific example of the manufacturing method is described in detail. In the present embodiment, first, as shown in FIG. 2, one surface (lower surface in FIG. 2) of the first substrate 1 in which two through holes 1a and 1b for forming the terminals 8a and 8b are drilled, is made of metal. The fixed electrode 3 and the lead wire 7 are formed of a thin film. The tip of the lead wire 7 is extended to the vicinity of the one through hole 1a. Here, as a technique for forming the fixed electrode 3 and the lead wire 7, a normal film forming technique such as vapor deposition or sputtering may be used and a film having a film thickness of 0.3 to 1 μm is formed. On the other hand, on the surface of the second substrate 2 facing the first substrate 1, a recess 2 a is formed in a portion to be the movable electrode 4, and the electrode pad 6 is formed.
A recess 2b for storing a and a connecting groove 2d for storing the lead wire 7 are formed. Further, a recess 2c for accommodating the electrode pad 6b is also formed adjacent to the recess 2b. After that, the insulating film 5 is formed on the bottom surfaces of the depressions 2b and 2c, and the electrode pads 6a and 6b are further deposited. Here, the electrode pad 6
The insulating film 5 and the electrode pads 6a and 6b are formed so that the surfaces of a and 6b are about 0.3 to 1 μm in the depressions 2b and 2c with respect to the bonding surface between the first substrate 1 and the second substrate 2. Set the thickness of. In this state, if the first substrate 1 and the second substrate 2 are joined by anodic bonding, as shown in FIG.
A gap of about the thickness dimension of the lead wire 7 is formed in the vicinity of a, and the capacitance gap and the through hole 1a communicate with each other through this gap. Therefore, if the gas (oxygen) generated during the anodic bonding is discharged from the capacitance gap through the through hole 1a if it is left in a high vacuum for a while after being attached to a vapor deposition device or a sputtering device for forming the terminals 8a and 8b. It After that, if a terminal 8a having a thickness of 1 μm or more is formed in a portion corresponding to the through hole 1a, the capacitance gap is sealed and the capacitance gap and the through hole 1 are formed.
a is cut off. That is, the sealing of the capacitance gap and the formation of the terminals 8a and 8b connected to the electrode pads 6a and 6b are simultaneously performed. In this procedure, the capacity gap is exhausted after the anodic bonding, so the capacity gap is sealed.
Oxygen generated during anodic bonding can be prevented from remaining inside the capacity gap, and the inside of the capacity gap can be accurately set to a desired pressure. Next, an embodiment that realizes the above-described manufacturing method will be described. In the following embodiments, it is assumed that a plurality of capacitive pressure sensors are formed on one substrate and then separated by dicing, as in a normal semiconductor manufacturing process. However, in the following, description will be given focusing on one capacitance type pressure sensor.

First, the steps for the second substrate 2 will be described. First, as shown in FIG. 3, a dent 2 a having a circular opening in the central portion of one surface of the second substrate 2 having a flat plate shape, and a dent 2
two cavities 2b that open in a rectangular shape around a,
2c and a connecting groove 2 for connecting between the depressions 2a and 2b
After forming a pattern corresponding to d with the photolithography technique, dry etching is performed to 3.5 μm.
Excavate to a depth of m. Next, 2 μm is formed on the surface of the second substrate 2 on which the depression 2a is formed by the plasma CVD method.
An m-thick oxide film is formed. Then, as shown in FIG.
A pattern is formed by photolithography so as to leave a portion corresponding to the insulating layer 5, and the oxide film other than the portion to be the insulating layer 5 is removed by etching. In the next step, 1 μm is formed on the surface of the second substrate 2 on which the depression 2a is formed.
An aluminum thin film with a thickness of m is formed by vapor deposition. Thereafter, as shown in FIG. 5, patterning is performed so as to leave the portions to be the electrode pads 6a and 6b in the depressions 2b and 2c, and the other portions of the aluminum thin film are removed by etching. Further, after forming a nitride film as a protective film on both front and back surfaces of the second substrate 2 by the plasma CVD method,
An anisotropic pattern using potassium hydroxide is formed by forming a pattern for forming the movable electrode 4 on the nitride film on the surface of the second substrate 2 opposite to the surface on which the depression 2a is formed (that is, opening a window). As shown in FIG. 6, the thin movable electrode 4 surrounded by the support frame 2e is formed in the portion corresponding to the recess 2a by performing the conductive etching. The thickness of the movable electrode 4 was 50 μm. Finally, the nitride film on the surface where the depression 2a is formed is removed by etching.

On the other hand, the steps relating to the first substrate 1 are as follows. First, as shown in FIG. 7, two through-holes 1a, 1 penetrating through are formed on the front and back of the first substrate 1 having a flat plate shape.
b is formed by the technique of sandblasting. Through hole 1
a and 1b are tapered so that the diameter decreases from one end to the other end, and one of the front and back surfaces of the first substrate 1 having the smaller opening diameter of the through holes 1a and 1b is the second surface. It is the surface facing the substrate 2. After forming the through holes 1a and 1b, a chromium thin film of 0.3 μm is formed on the surface facing the second substrate 2.
The film is formed with a thickness of m. Next, a pattern of the fixed electrode 3 and the lead wire 7 is formed on the thin film of chromium by a photolithography technique, and etching is performed to form a pattern of the fixed electrode 3 and the lead wire 7.
As shown in (3), the portion excluding the fixed electrode 3 and the lead wire 7 is removed.

First substrate 1 formed as described above
And the second substrate 2, the fixed electrode 3 and the recess 2a are opposed to each other, and the electrode pad 6 is formed on the opening surface of the through holes 1a and 1b.
It is joined by anodic bonding in a state where a and 6b are aligned. At this time, as shown in FIG.
Of the fixed electrode 3 and the movable electrode 4
A capacitance gap is formed by the depression 2a between the first and second portions, and the capacitance gap and the through hole 1a form a connection groove 2d and a second depression 2b.
Communicate via and. The area of the surface of each electrode pad 6a, 6b is set to be larger than the area of the opening surface on the small diameter side of each through hole 1a, 1b, and when the first substrate 1 and the second substrate 2 are bonded together. The opening surfaces on the small diameter side of the through holes 1a and 1b overlap the surfaces of the electrode pads 6a and 6b. Further, in this state, the lead wire 7 fits in the connecting groove 2d and does not contact the second substrate 2.

After the first substrate 1 and the second substrate 2 are bonded, a mask is exposed so that only the peripheries of the through holes 1a and 1b and the opening surface on the large diameter side of the through holes 1a and 1b are exposed. It is formed and put into a vacuum vapor deposition machine. After evacuation of the gas in the capacity gap for about 1 hour with the vacuum evaporator kept in a vacuum state, a thin aluminum film is vapor-deposited to a thickness of 2 μm to connect to the electrode pads 6a and 6b as shown in FIG. The terminals 8a and 8b exposed on the outer surface of the substrate 1 are formed.
Since the thickness dimension of the aluminum thin film forming the terminals 8a and 8b is larger than the distance between the first substrate 1 and each of the electrode pads 6a and 6b, by forming the terminals 8a and 8b, The gap that communicates the through hole 1a with the capacitance gap is sealed. That is, the terminals 8a, 8
At the same time as the formation of b, the capacitance gap is sealed. Terminal 8
After forming a and 8b, the capacitance type pressure sensor is individually separated by dicing.

According to the above manufacturing method, the capacity gap is sealed by anodic bonding the first substrate 1 and the second substrate 2 so that oxygen generated in the anodic bonding is exhausted from the capacity gap and then the capacity is reduced. Since the gap can be sealed and oxygen does not remain in the capacity gap, a getter material is not required, and the pressure in the capacity gap can be adjusted accurately. Moreover, since the sealing of the capacitance gap is performed at the same time as the formation of the terminals 8a and 8b, the number of steps does not increase.

(Embodiment 2) As shown in FIG. 10, this embodiment has a structure in which a guard electrode 9 surrounding the outer circumference of the fixed electrode 3 is added to the structure of the first embodiment. The guard electrode 9 is formed in an arc shape that surrounds substantially the entire circumference of the fixed electrode 3 except for the portion where the lead wire 7 is drawn from the fixed electrode 3. A lead wire 10 extends from one position of the guard electrode 9. The lead line 10 is formed substantially symmetrically to the lead line 7 in the plane in which the depression 2a is formed in the second substrate 2. Further, a through hole (not shown) is formed in the first substrate 1 in the vicinity of the tip of the lead wire 10 drawn from the guard electrode 9, and the through hole and the through hole 1a are formed.
A through hole 1b (see FIG. 2) corresponding to the terminal 8b electrically connected to the movable electrode 4 is formed between the through hole 1b and the movable electrode 4 (see FIG. 2). The guard electrode 9 and the lead wire 10 are formed of a metal thin film similarly to the fixed electrode 3 and the lead wire 7, and can be formed simultaneously in the step of forming the fixed electrode 3 and the lead wire 7. On the other hand, the second substrate 2
A rectangular recess 2f is formed at a position facing the end of the lead wire 10, and an electrode pad 6c is formed on the bottom surface of the recess 2f with an insulating film 5 interposed therebetween. In addition, a connection groove (not shown) that connects the recess 2a and the recess 2f is formed in the second substrate 2 so that the lead wire 10 can be stored. In the state where the first substrate 1 and the second substrate 2 are bonded, not only the through holes 1a and 1b are located corresponding to the electrode pads 6a and 6b, but also the portions corresponding to the electrode pads 6c are not shown. Corresponding to the through hole, the terminal 8c which is connected to the electrode pad 6c through the through hole and which is partially exposed on the outer surface of the first substrate 1 is formed of a metal thin film such as aluminum. In short, in this embodiment, the terminals 8a and 8b connected to the fixed electrode 3 and the movable electrode 4 are used.
Besides, a terminal 8c connected to the guard electrode 9 is provided. Here, since the recess 2f provided with the electrode pad 6c corresponding to the guard electrode 9 communicates with the recess 2a through the connecting groove, the terminals are bonded in the state where the first substrate 1 and the second substrate 2 are joined. Before forming 8c, not only the depression 2a communicates with the through hole 1a in the path passing through the depression 2b,
Even in the path passing through the recess 2f, the recess 2a communicates with a through hole (not shown), and the cross-sectional area of the exhaust path of the capacity gap can be made larger than that in the first embodiment. Dent 2f
Of course, the exhaust path passing through is sealed by the formation of the terminal 8c. In the present embodiment, since the guard electrode 9 is provided, the influence of disturbance can be suppressed by appropriately controlling the voltage applied to the guard electrode 9, and it can be used for more accurate pressure detection. . Other configurations and functions are similar to those of the first embodiment.

(Embodiment 3) In this embodiment, as shown in FIG. 11, in the configuration of Embodiment 1, each through hole 1a,
1b, a portion surrounded by the terminals 8a and 8b is filled with a protective member 11 made of synthetic resin. The protective member 11 can be filled in a fluid state after the terminals 8a and 8b are formed, and a material that solidifies after that is used. By filling the protective member 11 as described above, the portions of the terminals 8a and 8b that seal the capacitance gap are buried in the protective member 11, and the environment resistance of the sealed portion is improved and the reliability is improved. Is improved. It should be noted that the protective member 11 may be filled with a low melting point metal such as solder instead of the synthetic resin. Other configurations and functions are similar to those of the first embodiment.

(Embodiment 4) In this embodiment, as shown in FIG. 12, an IC chip 12 having a sensor circuit and the like is mounted in the structure of Embodiment 1 by using a flip-chip mounting technique. . Then, on the surface of the first substrate 1 where the terminals 8a and 8b are exposed, a pair of power supply terminals 13 and output terminals 14 are formed of a metal thin film, and the terminals 8a and 8b, the power supply terminals 13 and the output terminals 14 are formed. The bumps 15 made of gold are formed on the and. The IC chip 12 is connected to the first substrate 1 by pressure bonding to the bumps 15. With this configuration, a capacitance type pressure sensor integrally including the IC chip 12 is manufactured without using a bonding wire. It will be possible. Note that solder bumps are used instead of the gold bumps 15,
The IC chip 12 can be mounted by a reflow process. Other configurations and functions are similar to those of the first embodiment.

In each of the above-described embodiments, an absolute pressure type pressure sensor in which the inside of the capacity gap is evacuated has been illustrated, but the pressure in the capacity gap is appropriately adjusted by enclosing an inert gas adjusted to a desired pressure in the capacity gap. Can be set to.

[0026]

According to the first aspect of the present invention, there is provided a first substrate having a fixed electrode, and a movable electrode facing the fixed electrode via a sealed capacitance gap, the first substrate being bonded to the first substrate. Two substrates, and a first terminal and a second terminal electrically connected to the fixed electrode and the movable electrode, respectively, and the second substrate receives the pressure to be measured and the movable electrode A capacitance type pressure sensor that includes a pressure receiving portion that changes a relative position with respect to the fixed electrode, and that converts a pressure difference between the pressure in the capacitance gap and the measured pressure into a capacitance between the movable electrode and the fixed electrode. A method of manufacturing a sensor, comprising: a second electrode provided with first and second electrode pads electrically connected to the fixed electrode and the movable electrode, respectively.
The first substrate, which has through holes at positions corresponding to the first and second electrode pads, is anodically bonded to at least one of the through holes and the capacitance gap. Then, each through hole is sealed while the surrounding pressure is adjusted so that the pressure in the capacitance gap becomes a predetermined pressure, and the through holes are electrically connected to the first and second electrode pads, respectively. Since the conductive thin film to be the first and second terminals is formed by being exposed on the outer surface of the first substrate, the capacitance gap is formed after the anodic bonding of the first substrate and the second substrate. Even if oxygen is generated in the anodic bonding by sealing, the capacity gap can be sealed after being exhausted from the capacity gap, and oxygen does not remain in the capacity gap, so a getter material is not required. Ri, it is possible to accurately adjust the pressure in the volume gaps. In addition, the capacity gap is sealed at the same time when the terminals are formed, so that the number of steps is not increased.

According to the invention of claim 3, in the invention of claim 2, the pressure in the capacity gap can be appropriately set by enclosing the inert gas adjusted to a desired pressure in the capacity gap.

The invention of claim 4 is the invention of claim 2 or claim 3.
In the invention, a guard electrode surrounding the outer periphery of the fixed electrode is added to the first substrate, the electrode pad, the through hole, and the terminal correspond to the guard electrode, and a part of the terminal is It is formed so as to seal between the capacitance gap and the through hole, and the provision of a guard electrode suppresses the influence of disturbance by appropriately controlling the voltage applied to the guard electrode. Can be used for more accurate pressure detection.

The invention of claim 5 is the invention of claims 2 to 4.
In the invention, since the protective member filled in the portion in the through hole is added to the terminal, the portion of the terminal that seals the capacitance gap is embedded in the protective member, and the sealing portion The environmental resistance is improved and the reliability is improved.

The invention of claim 6 is the invention of claims 2 to 5.
In the invention described above, an IC chip mounted by flip-chip mounting on the first substrate is added by using a portion of the terminal exposed on the outer surface of the first substrate. It is possible to manufacture a capacitance type pressure sensor integrally provided with an IC chip without using a wire.

[Brief description of drawings]

FIG. 1 shows Embodiment 1 of the present invention, (a) is a plan view,
(B) is a sectional view of a main part.

FIG. 2 is an exploded perspective view of the above.

FIG. 3 shows a manufacturing process of the second substrate in the above,
(A) is a plan view and (b) is a sectional view.

FIG. 4 shows a manufacturing process of the second substrate in the above,
(A) is a plan view and (b) is a sectional view.

FIG. 5 shows a manufacturing process of the second substrate in the above,
(A) is a plan view and (b) is a sectional view.

FIG. 6 shows a manufacturing process of the second substrate in the above,
(A) is a plan view and (b) is a sectional view.

FIG. 7 shows one manufacturing process of the first substrate in the above,
(A) is a plan view and (b) is a sectional view.

FIG. 8 shows one manufacturing process of the first substrate in the above,
(A) is a plan view and (b) is a sectional view.

9A and 9B show one manufacturing step in the above, FIG. 9A is a plan view, and FIG.

FIG. 10 is a plan view showing a second embodiment of the present invention.

11A and 11B show Embodiment 3 of the present invention, in which FIG. 11A is a plan view and FIG.

12A and 12B show Embodiment 4 of the present invention, in which FIG. 12A is a plan view and FIG.

[Explanation of symbols]

1st substrate 1a, 1b through hole 2 Second substrate 2a hollow 3 fixed electrode 4 movable electrodes 6a, 6b, 6c Electrode pad 8a, 8b, 8c terminals 9 Guard electrode 11 Protective member 12 IC chip

Claims (6)

[Claims] 1. A first substrate provided with a fixed electrode, and a second substrate provided with a movable electrode facing the fixed electrode via a sealed capacitance gap and bonded to the first substrate.
A first terminal and a second terminal electrically connected to the fixed electrode and the movable electrode, respectively, and the second substrate receives a measured pressure and a relative position of the movable electrode with respect to the fixed electrode. A method of manufacturing a capacitance-type pressure sensor, comprising: a pressure-receiving section that changes the pressure difference between the pressure in the capacitance gap and the pressure to be measured into a capacitance between the movable electrode and the fixed electrode. The first substrate is provided on the second substrate provided with the first and second electrode pads electrically connected to the fixed electrode and the movable electrode, respectively.
And the first substrate having through holes at positions corresponding to the second electrode pad and at least one through hole and the capacitance gap are connected to each other by anodic bonding, and then the first substrate Outside the first substrate, the through-holes are sealed and electrically connected to the first and second electrode pads, respectively, while the ambient pressure is adjusted so that the pressure becomes a predetermined pressure. A method of manufacturing an electrostatic capacitance type pressure sensor, characterized in that a conductive thin film which becomes the first and second terminals by being exposed on a side surface is formed. 2. A first substrate having a fixed electrode, and a second substrate provided with a movable electrode facing the fixed electrode via a sealed capacitance gap, the second substrate being bonded to the first substrate.
A pressure receiving portion that changes the relative position of the movable electrode with respect to the fixed electrode upon receiving a measured pressure, and at least the fixed electrode and the movable electrode that are provided on one surface of the second substrate on the first substrate side. A plurality of electrically connected electrode pads and a plurality of through holes provided at positions corresponding to the respective electrode pads on the first substrate, and electrically connected to the electrode pads respectively; 2. A capacitance type pressure sensor, comprising: a plurality of terminals, which are conductive thin films, a part of which is exposed on the outer surface of the substrate. 3. The capacitance type pressure sensor according to claim 2, wherein the capacitance gap is filled with an inert gas having a desired pressure. 4. A guard electrode surrounding the fixed electrode is added to the first substrate, and the electrode pad, the through hole and the terminal correspond to the guard electrode and a part of the terminal is formed. 4. The capacitance type pressure sensor according to claim 2, wherein the capacitance type pressure sensor is formed so as to seal between the capacitance gap and the through hole. 5. The capacitance type pressure sensor according to claim 2, wherein a protection member filled in a portion inside the through hole is added to the terminal. . 6. The IC chip mounted by flip-chip mounting on the first substrate is added by using a portion of the terminal exposed on the outer surface of the first substrate. Any one of claims 2 to 5
Capacitance type pressure sensor described in the paragraph.