[go: up one dir, main page]

JP2003154303A - Vacuum drying device and vacuum drying method - Google Patents

Vacuum drying device and vacuum drying method

Info

Publication number
JP2003154303A
JP2003154303A JP2001354267A JP2001354267A JP2003154303A JP 2003154303 A JP2003154303 A JP 2003154303A JP 2001354267 A JP2001354267 A JP 2001354267A JP 2001354267 A JP2001354267 A JP 2001354267A JP 2003154303 A JP2003154303 A JP 2003154303A
Authority
JP
Japan
Prior art keywords
substrate
air flow
coating liquid
reduced pressure
airflow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001354267A
Other languages
Japanese (ja)
Other versions
JP3784305B2 (en
Inventor
Takahiro Kitano
高広 北野
Hiromitsu Matsuda
寛光 松田
Shinichi Sugimoto
伸一 杉本
Koji Sakai
宏司 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2001354267A priority Critical patent/JP3784305B2/en
Publication of JP2003154303A publication Critical patent/JP2003154303A/en
Application granted granted Critical
Publication of JP3784305B2 publication Critical patent/JP3784305B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Solid Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)

Abstract

PROBLEM TO BE SOLVED: To perform a vacuum drying process of a substrate with a high in- plane uniformity, in a technique to vacuum-dry a triangular substrate to which a coating liquid is applied. SOLUTION: In the vacuum-drying device for performing a vacuum-drying process of, for example, a lechicle substrate, to the surface of which a coating liquid is applied, an air flow regulating member which regulates an air flow formed by a solvent vaporized from the coating liquid so that the air flow proceeds in a specified direction, is mounted on an air flow regulating plate installed opposite to the lechicle substrate, with a slight gap left, above the substrate placed on a pedestal inside an airtight container housed in the vacuum- drying device.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、例えばレジスト等
の塗布液が表面に塗布された基板を減圧乾燥処理し、こ
の塗布液を乾燥させる基板減圧乾燥装置及び基板減圧乾
燥方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate reduced-pressure drying apparatus and a substrate reduced-pressure drying method in which a substrate coated with a coating liquid such as a resist is dried under reduced pressure to dry the coating liquid.

【0002】[0002]

【従来の技術】半導体デバイスやLCDの製造プロセス
においては、フォトリソグラフィと呼ばれる技術により
被処理基板へのレジスト処理が行われている。この処理
では、表面に所定のマスクパターンが形成されたレチク
ル基板を用いて露光処理が行われており、このレチクル
基板表面へのマスクパターンの形成は、先ずガラス製の
基板の表面に所定の塗布液の塗布を行って液膜を形成
し、しかる後当該液膜を露光した後、現像処理を行って
所望のパターンを得る、一連の工程により行われる。
2. Description of the Related Art In the manufacturing process of semiconductor devices and LCDs, a resist process is performed on a substrate to be processed by a technique called photolithography. In this process, an exposure process is performed by using a reticle substrate having a predetermined mask pattern formed on its surface. First, a mask pattern is formed on the surface of the reticle substrate by applying a predetermined coating on the surface of the glass substrate. This is carried out by a series of steps of applying a liquid to form a liquid film, exposing the liquid film to light, and then developing the liquid film to obtain a desired pattern.

【0003】前記塗布液の塗布手法の一つとして、液膜
を形成するレジスト成分と溶剤とを混ぜ合わせて成る塗
布液(レジスト液)を、レチクル基板の上方に設けたノ
ズルを一方向に往復させると共に、それに交差する方向
にレチクル基板を間欠送りしながら、ノズルから塗布液
をレチクル基板表面に吐出し、塗布液をいわゆる一筆書
きの要領で塗布して行く方法がある。
As one of the coating methods of the coating liquid, a coating liquid (resist liquid) formed by mixing a resist component forming a liquid film and a solvent is reciprocated in one direction by a nozzle provided above the reticle substrate. In addition to the above, there is a method of discharging the coating liquid from the nozzle onto the surface of the reticle substrate while intermittently feeding the reticle substrate in a direction intersecting with it, and coating the coating liquid in a so-called one-stroke writing manner.

【0004】前記塗布液に含まれる溶剤としては、揮発
性の低いものが使用されることや、速やかに溶剤を基板
表面から除去して塗布膜の膜厚均一性を確保するなどの
理由から、上述の方法を実施するにあたっては、基板上
に塗布液を塗布した後、直ぐに減圧乾燥ユニットに搬入
して減圧乾燥を行うことが好ましいと考えられる。図1
3は従来の減圧乾燥ユニットを示す図である。図中11
は蓋体12及び載置部13にて構成される密閉容器11
であり、蓋体12の天井部には開口部12aが形成され
ている。この開口部12aは排気管12bを介して真空
ポンプ14と連通し、密閉容器11の内部を減圧するこ
とができるようになっている。このような装置におい
て、レチクル基板Rを載置部13に載置し、図示しない
温度調節手段にてレチクル基板Rの温度を調整すると共
に真空ポンプ14を作動させ、密閉容器11内を減圧す
ることで、レチクル基板R表面の塗布液中の溶剤が蒸発
(乾燥)し、残ったレジスト成分によりパターンが形成
される。
As a solvent contained in the coating liquid, a solvent having low volatility is used, and the solvent is promptly removed from the substrate surface to ensure the film thickness uniformity of the coating film. In carrying out the above method, it is considered preferable to apply the coating liquid onto the substrate and then immediately carry it into a reduced pressure drying unit to perform reduced pressure drying. Figure 1
FIG. 3 is a view showing a conventional vacuum drying unit. 11 in the figure
Is a closed container 11 composed of a lid 12 and a mounting portion 13.
The opening 12a is formed in the ceiling of the lid 12. The opening 12a communicates with the vacuum pump 14 via the exhaust pipe 12b so that the inside of the closed container 11 can be depressurized. In such an apparatus, the reticle substrate R is placed on the placing part 13, the temperature of the reticle substrate R is adjusted by a temperature adjusting means (not shown), and the vacuum pump 14 is operated to reduce the pressure in the closed container 11. Then, the solvent in the coating liquid on the surface of the reticle substrate R is evaporated (dried), and a pattern is formed by the remaining resist component.

【0005】[0005]

【発明が解決しようとする課題】ところで減圧乾燥ユニ
ットに搬送されたときのレチクル基板R表面にある塗布
液15の状態は、例えば図14(a)に示すように、例
えば基板の周縁領域(周縁から例えば20mm程度内側
の領域)において、塗布液15自体の表面張力により角
が丸くなっている。このため図14(b)に示すよう
に、載置部13に載置されているレチクル基板Rの上方
側に、レチクル基板Rと対向するように整流板16を設
けた状態で密閉容器11内部を減圧し、整流板16とレ
チクル基板Rとの間で外に広がる気流により塗布液15
がレチクル基板R周縁側に向かって広がり、前記周縁領
域の塗布液15が丸くなるのを抑える手法が検討されて
いる。
By the way, the state of the coating liquid 15 on the surface of the reticle substrate R when conveyed to the reduced pressure drying unit is, for example, as shown in FIG. For example, in the area of about 20 mm inside), the corners are rounded by the surface tension of the coating liquid 15 itself. Therefore, as shown in FIG. 14B, the inside of the hermetically sealed container 11 with the rectifying plate 16 provided so as to face the reticle substrate R above the reticle substrate R mounted on the mounting portion 13. Is depressurized, and the coating liquid 15 is formed by the air flow spreading outward between the rectifying plate 16 and the reticle substrate R.
Has been studied to prevent the coating liquid 15 from spreading toward the peripheral edge of the reticle substrate R and rounding the coating liquid 15 in the peripheral area.

【0006】この場合、正方形あるいは長方形の角型基
板であるレチクル基板Rにおいては、図15に示すよう
に、基板の対角線であるa方向に向かう気流と、辺方向
であるb方向に向かう気流とでは、基板周縁部における
気流の強さが異なってしまい、基板の対角線方向におい
ては、図14(c)に示すように、上述の塗布液を外に
広げる気流が弱く、周縁部にある塗布液15が減圧排気
により引張られたような状態となり周縁部の膜厚が極端
に高くなってしまう場合がある。このようにレチクル基
板Rの周縁領域において部位によって膜厚が異なると、
当該周縁領域は回路形成領域として使用できなくなる懸
念がある。
In this case, in the reticle substrate R which is a square or rectangular rectangular substrate, as shown in FIG. 15, there are an air flow in the direction a, which is the diagonal line of the substrate, and an air flow in the direction b, which is the side direction. Then, the strength of the air flow at the peripheral portion of the substrate is different, and in the diagonal direction of the substrate, as shown in FIG. 14C, the air flow for spreading the above-mentioned coating liquid to the outside is weak, and the coating liquid at the peripheral portion is weak. There is a case where 15 is pulled by the reduced pressure exhaust and the film thickness at the peripheral portion becomes extremely high. As described above, when the film thickness varies depending on the region in the peripheral region of the reticle substrate R,
There is a concern that the peripheral area cannot be used as a circuit formation area.

【0007】本発明はこのような事情に基づいてなされ
たものであり、その目的は角型の基板表面に形成された
塗布膜を乾燥させるための減圧乾燥装置において、面内
均一性の高い処理を行うことができる技術を提供するこ
とにある。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a treatment with high in-plane uniformity in a reduced-pressure drying apparatus for drying a coating film formed on the surface of a rectangular substrate. It is to provide the technology that can do.

【0008】[0008]

【課題を解決するための手段】本発明の減圧乾燥装置
は、塗布液が表面に塗布された角型の基板を減圧乾燥す
るための減圧乾燥装置において、基板を載置するための
基板載置部がその内部に設けられた気密容器と、前記基
板載置部に載置された基板の表面と隙間を介して対向す
るように設けられた整流板と、整流板の基板側の面およ
び基板載置部の表面のうち少なくとも一方に設けられ、
塗布液から蒸発した溶剤成分で形成される気流が所定の
方向に向かうように規制するための気流規制部材と、前
記気密容器内を減圧し、塗布液に含まれる溶剤成分を蒸
発させるための減圧排気手段と、を備えたことを特徴と
する。
The vacuum drying apparatus of the present invention is a vacuum drying apparatus for vacuum drying a rectangular substrate having a coating liquid applied on the surface thereof. Part is provided inside the airtight container, a rectifying plate provided so as to face the surface of the substrate placed on the substrate placing part with a gap, a face of the rectifying plate on the substrate side, and the substrate Provided on at least one of the surfaces of the mounting portion,
An air flow restricting member for restricting an air flow formed of a solvent component evaporated from the coating liquid so as to be directed in a predetermined direction, and a pressure reducing member for decompressing the airtight container and evaporating the solvent component contained in the coating liquid. And an exhaust means.

【0009】前記気流規制部材は、例えば気流が基板の
一辺とそれに向い合う他の一辺に沿って伸びるように設
けられる構成である。また気流規制部材は、例えば基板
の周縁に沿って設けられると共に、当該気流規制部材に
規制された気流が基板の対角線の延長方向に向かうよう
に、基板の隅部に対応する位置には設けられていない構
成であっても良く、例えば基板の対角線の延長線に沿っ
てかつ当該延長線を挟んで互いに対向する第1の部材を
備え、一の対角線に沿って設けられた第1の部材の基板
寄りの端部と、当該一の対角線に隣接する対角線に沿っ
て設けられた第1の部材の基板寄りの端部と、の間は互
いに繋がれた構成としても良い。更に基板載置部は、基
板の温度を調整する温調プレートと、この温調プレート
に基板が収まるように設けられた凹部と、を備えた構成
としても良い。
The airflow restricting member is provided, for example, so that the airflow extends along one side of the substrate and the other side facing it. The airflow restricting member is provided along the periphery of the substrate, for example, and is provided at a position corresponding to a corner of the substrate so that the airflow restricted by the airflow restricting member is directed in the extension direction of the diagonal line of the substrate. It may be configured not to include, for example, a first member provided along a diagonal line of the substrate and facing each other across the extension line, and the first member provided along one diagonal line. The end portion near the substrate and the end portion near the substrate of the first member provided along the diagonal line adjacent to the one diagonal line may be connected to each other. Further, the substrate mounting portion may be configured to include a temperature control plate that adjusts the temperature of the substrate and a recessed portion that is provided so that the substrate fits in the temperature control plate.

【0010】本発明によれば、角型の基板表面に整流板
を対向させた状態で塗布膜を減圧乾燥するにあたって気
流規制部材により気流が所定の方向に流れるように規制
しているので基板全体にムラのないあるいはムラの少な
い気流を形成することができ、均一性の高い処理を行う
ことができる。
According to the present invention, when the coating film is dried under reduced pressure with the straightening plate facing the rectangular substrate surface, the air flow regulating member regulates the air flow so that it flows in a predetermined direction. It is possible to form an air flow having no or little unevenness, and it is possible to perform highly uniform treatment.

【0011】本発明の減圧乾燥方法は、塗布液が表面に
塗布された角型の基板を気密容器内の基板載置部に載置
する工程と、次いで基板表面に隙間を介して整流板を対
向させた状態で気密容器内を減圧し、基板に塗布された
塗布液から蒸発した溶剤成分で形成される気流を前記整
流板に設けられた気流規制部材により所定の方向に向か
うように規制する工程と、を備えたことを特徴とする。
The reduced-pressure drying method of the present invention comprises a step of placing a rectangular substrate having a coating liquid applied on its surface on a substrate placing portion in an airtight container, and then a rectifying plate on the surface of the substrate via a gap. The inside of the airtight container is depressurized in a state of facing each other, and the air flow formed by the solvent component evaporated from the coating liquid applied to the substrate is regulated in a predetermined direction by the air flow regulating member provided on the rectifying plate. And a process.

【0012】[0012]

【発明の実施の形態】先ず本発明の減圧乾燥装置を説明
する前に、当該減圧乾燥装置が組み込まれた塗布装置の
一例について図1を参照しながら説明する。図1中、2
1は例えば複数枚のレチクル基板Rが収納されたカセッ
トCを搬入出するためのカセットステーションであり、
このカセットステーション21には前記カセットCを載
置する載置部21aが設けられている。またカセットス
テーション21の奥側には、例えばカセットステーショ
ン21から奥を見て左側から順に塗布ユニット22、加
熱・冷却系および減圧乾燥等のユニットを多段に積み重
ねた棚ユニット23,24,25が夫々配置されてい
る。更にカセットステーション21、塗布ユニット22
及び棚ユニット23,24,25の間でレチクル基板R
の受け渡しを行うためのアーム26aを備えた搬送機構
26が設けられている。
BEST MODE FOR CARRYING OUT THE INVENTION Before describing the vacuum drying apparatus of the present invention, an example of a coating apparatus incorporating the vacuum drying apparatus will be described with reference to FIG. 1 in FIG.
Reference numeral 1 denotes a cassette station for carrying in and out a cassette C in which a plurality of reticle substrates R are stored,
The cassette station 21 is provided with a mounting portion 21a on which the cassette C is mounted. Further, on the back side of the cassette station 21, for example, a shelf unit 23, 24, 25 in which a coating unit 22, a heating / cooling system, a unit for drying under reduced pressure, and the like are stacked in multiple stages in order from the left side when the back is seen from the cassette station 21, respectively. It is arranged. Further, the cassette station 21, the coating unit 22
And the reticle substrate R between the shelf units 23, 24, 25.
A transfer mechanism 26 including an arm 26a for delivering and receiving is provided.

【0013】前記塗布ユニット22においては、後述す
る塗布手法が可能な塗布装置が設けられており、棚ユニ
ット23,24,25においては、加熱ユニット20
1、冷却ユニット202のほか、本発明の減圧乾燥装置
である減圧乾燥ユニット203、疎水化処理ユニット2
04等が上下に割り当てされている。なお、201〜2
04は一例として指示してある。
The coating unit 22 is provided with a coating device capable of a coating method which will be described later, and the shelf units 23, 24 and 25 include the heating unit 20.
1. In addition to the cooling unit 202, a reduced pressure drying unit 203 which is a reduced pressure drying apparatus of the present invention, a hydrophobic treatment unit 2
04 and so on are assigned vertically. In addition, 201-2
04 is indicated as an example.

【0014】この装置のレチクル基板Rの流れについて
説明すると、先ず外部からレチクル基板Rが収納された
カセットCが載置部21aに載置され、搬送機構26に
よりカセットC内からレチクル基板Rが取り出され、棚
ユニット25内の疎水化処理ユニット204の一の棚の
処理部内にて疎水化処理が行われた後、冷却ユニット2
02で所定の温度に冷却され、塗布ユニット22にて塗
布液であるレジスト液が塗布される。続いてレチクル基
板Rは減圧乾燥ユニット203に搬送され、減圧乾燥処
理によりレジスト膜が形成される。レジスト膜が形成さ
れたレチクル基板は加熱ユニット201で所定の温度に
加熱された後、冷却ユニット202で所定の温度に冷却
され、載置部21a上のカセットC内に戻される。しか
る後、当該カセットCに収納されたレチクル基板Rは図
示しない露光装置に搬送され、前記レジスト膜に露光が
された後、現像装置にて現像処理が行われ、所望のマス
クパターンが形成される。
The flow of the reticle substrate R of this apparatus will be described. First, the cassette C accommodating the reticle substrate R is placed on the placing portion 21a from the outside, and the reticle substrate R is taken out of the cassette C by the transport mechanism 26. After the hydrophobic processing is performed in the processing section of one shelf of the hydrophobic processing unit 204 in the shelf unit 25, the cooling unit 2
In 02, it is cooled to a predetermined temperature, and in the coating unit 22, a resist liquid which is a coating liquid is applied. Subsequently, the reticle substrate R is conveyed to the reduced pressure drying unit 203, and a resist film is formed by the reduced pressure drying process. The reticle substrate on which the resist film is formed is heated to a predetermined temperature by the heating unit 201, cooled to a predetermined temperature by the cooling unit 202, and returned to the cassette C on the mounting portion 21a. Thereafter, the reticle substrate R stored in the cassette C is conveyed to an exposure device (not shown), the resist film is exposed, and then development processing is performed by a development device to form a desired mask pattern. .

【0015】ここで本発明に係る減圧乾燥手法の前段に
ある上述の塗布ユニットにおいて、液膜を形成するレジ
スト成分と溶剤とを混ぜ合わせて成る塗布液(レジスト
液RE)をレチクル基板R表面に塗布する手法について
図2、図3を用いて簡単に説明する。塗布ユニットの基
板処理空間内において、図示しない基板保持部により水
平に保持されたレチクル基板Rの表面側に対向するよう
に設定された塗布液の供給ノズル30を一方向(図中X
方向)に往復させながら塗布液をレチクル基板Rに供給
する。この場合予定とする塗布領域外に供給されないよ
うにスリット形状の開口部を有するプレート31が設け
られている。また供給ノズル30が基板の一縁から他縁
に移動すると、そのタイミングに合わせて図示しない移
動機構によりレチクル基板Rがそれに交差する方向に間
欠送りされる。このような動作を繰り返すことにより、
いわゆる一筆書きの要領で塗布液がレチクル基板Rに塗
布される。
Here, in the above-mentioned coating unit in the preceding stage of the vacuum drying method according to the present invention, a coating liquid (resist liquid RE) formed by mixing a resist component forming a liquid film and a solvent is applied to the surface of the reticle substrate R. A coating method will be briefly described with reference to FIGS. 2 and 3. In the substrate processing space of the coating unit, the coating liquid supply nozzle 30 set to face the front surface side of the reticle substrate R horizontally held by a substrate holding unit (not shown) is moved in one direction (X in the drawing).
The coating liquid is supplied to the reticle substrate R while reciprocating in (direction). In this case, a plate 31 having a slit-shaped opening is provided so as not to be supplied outside the intended coating area. When the supply nozzle 30 moves from one edge of the substrate to the other edge, the reticle substrate R is intermittently fed in a direction intersecting with it by a moving mechanism (not shown) at the timing. By repeating such operation,
The coating liquid is applied to the reticle substrate R in a so-called one-stroke writing manner.

【0016】続いて本発明に係る減圧乾燥装置の実施の
形態について説明する。図4に示すようにこの減圧乾燥
装置は塗布液が塗布されたレチクル基板Rを載置するた
めの基板載置部である載置台4を備えている。この載置
台4には載置したレチクル基板Rの温度を調節するため
の温度調節手段41例えばペルチェ素子からなる冷却部
が埋設されており、この例では載置台4と温度調節手段
41とにより温調プレートが構成されている。なお載置
台4について、より詳しくは図5、図6に示すように、
比較的熱容量の大きいレチクル基板Rに対して速やかに
温度調節が可能なように、載置台4の基板載置領域はレ
チクル基板Rよりも僅かに大きい相似形の凹部42(基
板収容部)により形成され、このように構成すれば基板
の裏面側及び側面にて速やかに熱交換が行われる。また
溶剤揮発(蒸発)時の基板温度変化を最小限にできる。
この凹部42の底面には、当該凹部42内に収まったレ
チクル基板Rが載置台4の表面から僅かな隙間、例えば
0.1mm程度浮いた状態で載置されるようにレチクル
基板Rの四隅に対応する位置に基板保持用の突起部43
が設けられている。また載置台4にはレチクル基板Rを
搬入出する際、レチクル基板R周縁の面取り部44を下
方向から支持して昇降するように、この面取り部と同じ
ように傾斜した基板支持面45を備えた基板支持ピン4
6が、載置台4を上下方向に貫通し、図示しない昇降機
構により突没自在に設けられている。
Next, an embodiment of the reduced pressure drying apparatus according to the present invention will be described. As shown in FIG. 4, this reduced-pressure drying apparatus includes a mounting table 4 which is a substrate mounting portion for mounting the reticle substrate R coated with the coating liquid. A temperature controller 41 for adjusting the temperature of the mounted reticle substrate R, for example, a cooling unit made of a Peltier device is embedded in the mounting table 4. In this example, the temperature is controlled by the mounting table 4 and the temperature controller 41. The adjustment plate is configured. Regarding the mounting table 4 in more detail, as shown in FIGS.
The substrate mounting area of the mounting table 4 is formed by a similar-shaped recess 42 (substrate accommodating portion) slightly larger than the reticle substrate R so that the temperature of the reticle substrate R having a relatively large heat capacity can be quickly adjusted. With this structure, heat exchange is promptly performed on the back surface and the side surface of the substrate. Further, it is possible to minimize the substrate temperature change when the solvent is evaporated (evaporated).
On the bottom surface of the concave portion 42, the reticle substrate R accommodated in the concave portion 42 is mounted on the four corners of the reticle substrate R so that the reticle substrate R can be mounted with a slight gap from the surface of the mounting table 4, for example, about 0.1 mm. The protrusion 43 for holding the substrate is provided at the corresponding position.
Is provided. Further, when the reticle substrate R is carried in and out of the mounting table 4, the chamfered portion 44 at the peripheral edge of the reticle substrate R is provided with a substrate supporting surface 45 inclined like the chamfered portion so as to support the chamfered portion 44 from below and move up and down. Board support pin 4
6 penetrates the mounting table 4 in the vertical direction and is provided so as to be able to project and retract by an elevating mechanism (not shown).

【0017】載置台4の上方側には、蓋体5が図示しな
い蓋体昇降機構により昇降自在に設けられている。この
蓋体5はレチクル基板Rの搬入出時には上昇し、減圧乾
燥を行う時には下降して、蓋体5と載置台4とにより気
密容器40を形成する構成となっている。また蓋体5の
天井部には中心付近に排気口51が設けられ、この排気
口51にはバルブ52、排気流量を調整して圧力を制御
する圧力調整部53および減圧排気手段である真空ポン
プ54が配管55を介して接続されている。
A lid 5 is provided on the upper side of the mounting table 4 so as to be lifted and lowered by a lid lifting mechanism (not shown). The lid 5 is raised when the reticle substrate R is loaded and unloaded, and is lowered when the reticle substrate R is dried, so that the lid 5 and the mounting table 4 form an airtight container 40. An exhaust port 51 is provided near the center of the ceiling of the lid 5, and a valve 52 is provided at the exhaust port 51, a pressure adjusting unit 53 that adjusts the exhaust flow rate to control the pressure, and a vacuum pump that is a decompression exhaust unit. 54 is connected via a pipe 55.

【0018】また載置台4の上方側には、レチクル基板
Rの表面と対向するように整流板6が設けられている。
この整流板6は、図7に示すように、例えばレチクル基
板R表面積よりも大きい円形状の板で構成され、レチク
ル基板Rの表面と対向する面(裏面側)には、レチクル
基板Rの周縁に対して僅かに外側において、基板の一辺
R1とそれに向かう合う他の一辺R2に対応する位置に
両辺R1、R2に沿って夫々伸びるように、例えば20
0mm(長さ)×10mm(幅)×0.8mm(厚み)
の四角形状の気流規制部材61が夫々設けられる。また
整流板6はその周縁部を例えば3ヵ所で支持部材62に
より支持されており、これら支持部材62は載置台4を
貫通し、昇降ベース63を介して接続された昇降手段6
4により高さ調整ができるように構成されている。
A rectifying plate 6 is provided above the mounting table 4 so as to face the surface of the reticle substrate R.
As shown in FIG. 7, the current plate 6 is formed of, for example, a circular plate having a larger surface area than the surface area of the reticle substrate R, and the surface opposite to the front surface of the reticle substrate R (back surface side) has a peripheral edge of the reticle substrate R. On the other hand, slightly outside, for example, 20 so as to extend along both sides R1 and R2 at positions corresponding to one side R1 of the substrate and the other side R2 facing it.
0 mm (length) x 10 mm (width) x 0.8 mm (thickness)
The rectangular airflow restricting members 61 are provided respectively. Further, the rectifying plate 6 is supported by a supporting member 62 at its peripheral portion at, for example, three places, and these supporting members 62 penetrate the mounting table 4 and are connected via an elevating base 63 to elevating means 6
The height can be adjusted according to item 4.

【0019】前記昇降手段64は、昇降ベース63の下
方側において、ガイド部65が螺合されたボールネジ部
66が配置され、モータM及びプーリ67を含む駆動部
によりボールネジ部66を回転させることにより、ガイ
ド部65及び昇降ベース63に両端が枢支された連結体
68が回転して整流板6が昇降する構成となっている。
なお69は支持部材62の貫通孔を介して気密容器40
内の減圧状態が破られないようにするためのベローズで
ある。またモータM、温度調節手段41及び圧力調整部
53は制御部7に接続されており、レチクル基板Rの減
圧乾燥処理を行う際、その動作は制御部7により制御さ
れる。
In the elevating means 64, a ball screw portion 66 screwed with a guide portion 65 is arranged below the elevating base 63, and the ball screw portion 66 is rotated by a driving portion including a motor M and a pulley 67. The guide member 65 and the connecting body 68 whose both ends are pivotally supported by the elevating base 63 rotate so that the flow straightening plate 6 moves up and down.
In addition, 69 is the airtight container 40 through the through hole of the support member 62.
It is a bellows to prevent the decompressed state inside from being broken. The motor M, the temperature adjusting means 41, and the pressure adjusting unit 53 are connected to the control unit 7, and when the reticle substrate R is dried under reduced pressure, its operation is controlled by the control unit 7.

【0020】このような減圧乾燥装置においては、先ず
蓋体5が上昇した状態において、既述の手法にて塗布液
が塗布されたレチクル基板Rが図示しない搬送アームと
基板支持ピン46との協働作用により載置台4の凹部4
2に収まるように載置される。次いで昇降手段64によ
り整流板6が待機位置まで下降し、蓋体5が下降してレ
チクル基板Rの周囲を囲む気密容器40が形成される。
続いて整流板6が下降して第1の高さ位置L1、例えば
整流板6下面がレチクル基板R表面から1mm離れた高
さ位置(気流規制部材下面がレチクル基板R表面から
0.2mm離れた高さ位置)に設定され、温度調節手段
41によりレチクル基板Rの温度が所定の温度、例えば
18℃に設定される。
In such a reduced-pressure drying apparatus, the reticle substrate R coated with the coating liquid by the above-described method is first operated in a state in which the lid 5 is lifted and the cooperation between the transport arm (not shown) and the substrate support pin 46. Due to the action, the concave portion 4 of the mounting table 4
It is placed so that it fits in 2. Next, the rectifying plate 6 is lowered to the standby position by the elevating means 64, and the lid 5 is lowered to form the airtight container 40 surrounding the reticle substrate R.
Then, the current plate 6 descends to a first height position L1, for example, a height position where the lower surface of the current plate 6 is 1 mm away from the surface of the reticle substrate R (the lower surface of the airflow regulating member is 0.2 mm away from the surface of the reticle substrate R. The temperature of the reticle substrate R is set to a predetermined temperature, for example, 18 ° C. by the temperature adjusting means 41.

【0021】しかる後バルブ52が開き、真空ポンプ5
4により気密容器40の減圧が開始され、図8(a)に
示す減圧時間tと気密容器40内の圧力pとの関係を示
すグラフの実線のように、先ず気密容器40内の空気が
排出される減圧時間t1までは急速に圧力pが低下す
る。次いでレチクル基板R表面の塗布液(レジスト液R
E)に含まれる溶剤の蒸発が始まり、レチクル基板Rと
整流板6との隙間を流れる気流が形成される。このとき
溶剤は前記隙間において蒸発(液体から気体への状態変
化)により容積が大きくなるので前記気流はレチクル基
板R表面のレジスト膜を外方向に向かって押し広げるよ
うにして流れる。また溶剤が沸騰して塗布液膜の表面を
粗くするのを抑えるため、圧力調整部53により排気量
が調節され、図8(b)に示すように気密容器40内の
圧力pは溶剤の蒸気圧手前付近にて緩やかに低下する。
Then, the valve 52 is opened and the vacuum pump 5 is opened.
4, the depressurization of the airtight container 40 is started, and the air in the airtight container 40 is first discharged as shown by the solid line in the graph showing the relationship between the depressurization time t and the pressure p in the airtight container 40 shown in FIG. The pressure p rapidly decreases until the reduced pressure time t1. Next, the coating liquid (resist liquid R
Evaporation of the solvent contained in E) starts, and an airflow that flows through the gap between the reticle substrate R and the current plate 6 is formed. At this time, since the solvent has a large volume in the gap due to evaporation (change of state from liquid to gas), the air flow flows so as to spread the resist film on the surface of the reticle substrate R outward. Further, in order to prevent the solvent from boiling and roughening the surface of the coating liquid film, the exhaust amount is adjusted by the pressure adjusting unit 53, and the pressure p in the airtight container 40 is the vapor of the solvent as shown in FIG. 8B. Gradually decreases near the pressure side.

【0022】このとき図9(a)示すように整流板6及
び気流規制部材61によりその流れ方向が規制されなが
ら整流板6とレチクル基板Rとの僅かな隙間を外側方向
に向かって流れる気流が形成される。つまり気流規制部
材61の下面とレチクル基板Rとの隙間は極めて小さい
ので、レチクル基板Rの上方空間はレチクル基板Rの両
側に伸びる一対の気流規制部材61、61と整流板6と
により囲まれると共に前後が開口している状態となり、
このためレチクル基板Rの塗布膜から蒸発した溶剤蒸気
を含む気流は、図9(b)に模式的に矢印の大きさで気
流の強さを示すように、その殆どが前側あるいは後側の
開口部に向かって流れ、レチクル基板Rの全面に亘って
均一な気流が形成される。
At this time, as shown in FIG. 9A, while the flow direction is regulated by the flow straightening plate 6 and the air flow regulating member 61, the air flow flowing outward in a slight gap between the flow straightening plate 6 and the reticle substrate R. It is formed. That is, since the gap between the lower surface of the air flow restricting member 61 and the reticle substrate R is extremely small, the space above the reticle substrate R is surrounded by the pair of air flow restricting members 61 and 61 extending to both sides of the reticle substrate R and the flow straightening plate 6. The front and back are open,
Therefore, most of the air flow containing the solvent vapor evaporated from the coating film on the reticle substrate R has a front opening or a rear opening, as schematically shown by the size of the arrow in FIG. And a uniform airflow is formed over the entire surface of the reticle substrate R.

【0023】このまま減圧乾燥を続けると、レチクル基
板Rの周縁の膜厚が高くなった状態で乾燥してしまう場
合があるので、気密容器40内の圧力pが所定の圧力に
達した時点(図中t2)で図8(c)に示すように整流
板6が第2の高さ位置L2、例えば整流板6下面がレチ
クル基板R表面から5mm離れた高さ位置まで上昇し
て、整流板6とレチクル基板Rとの隙間を広げることに
より、前記気流が塗布液膜を押し広げる力が弱められ
る。その後、溶剤の殆どが蒸発し、基板表面にレジスト
成分からなるレジスト膜が形成されると、気密容器40
内に残存する蒸発した溶剤雰囲気が排気されて再度気密
容器40内の圧力pが急速に低下し、所定の圧力になっ
た時点(図中t3)で減圧排気を停止する。しかる後気
密容器40が大気雰囲気まで復帰され減圧乾燥処理が終
了する。
If the vacuum drying is continued as it is, the reticle substrate R may be dried in a state where the film thickness at the peripheral edge becomes high. Therefore, when the pressure p in the hermetic container 40 reaches a predetermined pressure (see FIG. At middle t2), as shown in FIG. 8C, the rectifying plate 6 is moved to the second height position L2, for example, the lower surface of the rectifying plate 6 is moved up to a height position 5 mm away from the surface of the reticle substrate R, and the rectifying plate 6 is moved. By widening the gap between the reticle substrate R and the reticle substrate R, the force of the air flow to spread the coating liquid film is weakened. Thereafter, when most of the solvent evaporates and a resist film made of a resist component is formed on the substrate surface, the airtight container 40
The evaporated solvent atmosphere remaining therein is exhausted, the pressure p in the airtight container 40 rapidly decreases again, and when the pressure reaches a predetermined pressure (t3 in the figure), the reduced pressure exhaust is stopped. Then, the airtight container 40 is returned to the atmosphere, and the reduced pressure drying process is completed.

【0024】上述の実施の形態によれば、減圧乾燥時に
塗布膜からの溶剤成分(蒸発成分)で形成される気流
を、一対の気流規制部材61、61によりレチクル基板
Rの両側縁に沿った流れとすることにより、レチクル基
板Rの周縁に対してムラのない気流を形成することがで
きる。更に気流の一部がレチクル基板Rの両側縁から気
流規制部材61、61の下を潜って流れるため両側縁
(X方向に沿った周縁)においても塗布液が表面張力に
より丸まることが抑えられる。その結果レチクル基板R
の全周に亘って周縁部の塗布膜の盛り上がりの状態が予
定している範囲に収まり、レチクル基板Rの隅部の流量
が少ないことによる局所的な異常な盛り上がりを抑える
ことができ、周縁部における有効領域を広くすることが
できる。即ちこの実施の形態によればレチクル基板Rに
対して面内均一性の高い減圧乾燥処理を行うことができ
る。
According to the above-described embodiment, the air flow formed by the solvent component (evaporation component) from the coating film at the time of drying under reduced pressure is guided by the pair of air flow control members 61, 61 along both side edges of the reticle substrate R. By setting the flow, it is possible to form a uniform air flow to the peripheral edge of the reticle substrate R. Further, since a part of the airflow flows under the airflow restricting members 61, 61 from both side edges of the reticle substrate R, the coating liquid can be prevented from being rounded by the surface tension even at both side edges (peripheries along the X direction). As a result, the reticle substrate R
The swelling state of the coating film in the peripheral portion over the entire circumference is within a predetermined range, and local abnormal swelling due to a small flow rate in the corner portion of the reticle substrate R can be suppressed. The effective area in can be widened. That is, according to this embodiment, the reticle substrate R can be subjected to reduced-pressure drying treatment with high in-plane uniformity.

【0025】また他の実施の形態として、気流規制部材
61は、気流がレチクル基板Rの対角線の延長方向に向
かうように規制する構成としても良い。例えば図10
(a)に示すように基板の四隅に対応する領域には気流
規制部材61を設けずにこの領域がいわば開口するよう
に構成し、基板の各々の辺に対応する位置には気流規制
部材61を設けた構成としても良い。あるいは図10
(b)又は図10(c)に示すようにレチクル基板Rの
対角線の延長線d1に沿ってかつこの延長線d1を挟ん
で互いに対向するように設けられた一対の第1の部材6
1aの端部と、前記対角線に隣接する対角線の延長線d
2に沿って設けられた第1の部材61aの端部とが繋が
れた構成としても良い。この例において、図10(b)
では基板の周縁方向に沿って設けられた第2の部材61
bを介して前記第1の部材61aの基板寄りの端部が繋
がれた構成となっている。また図10(c)では、レチ
クル基板Rの各辺の中心付近から各対角線の延長線d
1、d2と平行に伸びるように外方に向けて第1の部材
61aが伸び出し、各辺において2本の第1の部材61
a、61aにより、くの字形の気流規制部材61が4組
形成された構成である。
As another embodiment, the air flow restricting member 61 may be so structured as to restrict the air flow so as to extend in the direction of extension of the diagonal line of the reticle substrate R. For example, in FIG.
As shown in (a), the airflow regulating members 61 are not provided in the regions corresponding to the four corners of the substrate, and the regions are so-called open, and the airflow regulating members 61 are provided at the positions corresponding to the respective sides of the substrate. May be provided. Alternatively, FIG.
As shown in (b) or FIG. 10 (c), a pair of first members 6 provided along the diagonal extension line d1 of the reticle substrate R and facing each other with the extension line d1 interposed therebetween.
1a and an extension line d of a diagonal line adjacent to the diagonal line
The configuration may be such that the end of the first member 61a provided along the line 2 is connected. In this example, FIG.
Then, the second member 61 provided along the peripheral direction of the substrate
The end portion of the first member 61a near the substrate is connected via b. Further, in FIG. 10C, the extension line d of each diagonal line from the vicinity of the center of each side of the reticle substrate R.
1, the first member 61a extends outward so as to extend in parallel with d2, and the two first members 61a are provided on each side.
Four sets of dogleg-shaped airflow restricting members 61 are formed by a and 61a.

【0026】この様な構成においては、レチクル基板R
の対角線方向の気流を強くでき、反対に辺方向の気流を
弱められる。つまりレチクル基板Rの全周縁に対して気
流の強さを均一の高いものにすることができ、上述の場
合と同様の効果が得られる。更に整流板6は円形状に限
られず四角形状であっても良い。この場合においても上
述の場合と同様の効果が得られる。なお本発明は、被処
理基板にレチクル基板以外の基板、例えばLCD用のガ
ラス基板の減圧乾燥処理にも適用できる。
In such a structure, the reticle substrate R
The airflow in the diagonal direction can be strengthened, while the airflow in the side direction can be weakened. That is, the strength of the airflow can be made uniform and high over the entire periphery of the reticle substrate R, and the same effect as the above case can be obtained. Further, the current plate 6 is not limited to the circular shape and may be a quadrangular shape. In this case, the same effect as the above case can be obtained. The present invention can also be applied to a substrate other than the reticle substrate, for example, a glass substrate for LCD under reduced pressure as a substrate to be processed.

【0027】また本発明の減圧乾燥装置は、気密容器4
0の減圧状態を開放するための手段として図11に示す
ように、バルブ81、圧力調整部82、フィルタ83を
備えた気体供給手段が三方弁84を介して接続された構
成としても良い。この場合、レチクル基板R表面に塗布
された塗布液の乾燥が終了した後、バルブ81が開き、
三方弁84が切り換えられて、圧力調整手段82により
所定の給気量に設定されたパージ用の気体、例えば窒素
ガス等の不活性ガスを減圧状態の気密容器40内に供給
し、気密容器40内の圧力を大気雰囲気に復帰させる。
このような構成においては、フィルタ83で浮遊粒子等
の不純物が取り除かれた気体を供給することができ、ま
た仮に気密容器40内に不純物が付着していたとして
も、この不純物が気体の流れに乗って気密容器40内で
巻き上がらないような給気量に設定されて供給されるの
で、基板に不純物が付着するのを抑えることができる。
Further, the vacuum drying device of the present invention comprises an airtight container 4
As a means for releasing the reduced pressure state of 0, as shown in FIG. 11, a gas supply means including a valve 81, a pressure adjusting portion 82, and a filter 83 may be connected via a three-way valve 84. In this case, the valve 81 is opened after the coating liquid applied to the surface of the reticle substrate R is dried,
The three-way valve 84 is switched to supply a purging gas, for example, an inert gas such as nitrogen gas, which is set to have a predetermined air supply amount by the pressure adjusting means 82, into the airtight container 40 in a reduced pressure state, and the airtight container 40. The internal pressure is returned to the atmosphere.
In such a configuration, it is possible to supply the gas from which impurities such as suspended particles have been removed by the filter 83, and even if the impurities adhere to the airtight container 40, the impurities will not flow into the gas flow. Since the supply amount of air is set so that it does not wind up in the airtight container 40 and is supplied, it is possible to prevent impurities from adhering to the substrate.

【0028】なお気流規制部材61は、上述の整流板6
に設ける構成に限られず、図12に示すように、例えば
図7、図10に示したような気流規制部材61が載置台
4表面に設けられる構成としても良く、あるいは整流板
6と載置台4に分割して設けられる構成としても良い。
この様な構成においても気流が所定の方向に規制するこ
とができ、上述の場合と同様の効果が得られる。
The air flow regulating member 61 is the above-mentioned rectifying plate 6
The configuration is not limited to that provided in FIG. 12, and as shown in FIG. 12, for example, a configuration in which the airflow regulating member 61 as shown in FIGS. It may be configured to be divided into two.
Even in such a configuration, the airflow can be regulated in a predetermined direction, and the same effect as the above case can be obtained.

【0029】[0029]

【発明の効果】以上のように本発明によれば、角型の基
板表面に形成された塗布膜を乾燥させるための減圧乾燥
装置において、減圧乾燥時に塗布膜からの溶剤成分(蒸
発成分)で形成される気流の方向を規制してムラのない
気流を形成することにより均一性の高い減圧乾燥処理を
行うことができ、この結果、塗布膜の面内均一性を向上
することができる。
As described above, according to the present invention, in a vacuum drying apparatus for drying a coating film formed on the surface of a rectangular substrate, a solvent component (evaporation component) from the coating film is used during drying under reduced pressure. By controlling the direction of the formed airflow to form an even airflow, a highly uniform vacuum drying process can be performed, and as a result, the in-plane uniformity of the coating film can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る減圧乾燥装置を組み込んだ塗布装
置の一例を示す斜視図である。
FIG. 1 is a perspective view showing an example of a coating apparatus incorporating a reduced pressure drying apparatus according to the present invention.

【図2】減圧乾燥処理の対象となる塗布膜を形成するた
めの塗布装置を略解的に示す斜視図である。
FIG. 2 is a perspective view schematically showing a coating device for forming a coating film which is a target of a reduced pressure drying process.

【図3】減圧乾燥処理の対象となる塗布膜を形成する様
子を示す説明図である。
FIG. 3 is an explanatory diagram showing a state of forming a coating film which is a target of a reduced pressure drying process.

【図4】本発明の実施の形態に係る減圧乾燥装置を示す
縦断面図である。
FIG. 4 is a vertical sectional view showing a reduced pressure drying apparatus according to an embodiment of the present invention.

【図5】上記の実施の形態に係る減圧乾燥装置の載置台
を示す斜視図である。
FIG. 5 is a perspective view showing a mounting table of the reduced pressure drying apparatus according to the above embodiment.

【図6】上記載置台における基板の支持の様子を示す断
面図である。
FIG. 6 is a cross-sectional view showing how the substrate is supported on the mounting table.

【図7】上記の実施の形態に係る減圧乾燥装置に用いら
れる整流板を示す説明図である。
FIG. 7 is an explanatory diagram showing a current plate used in the reduced pressure drying apparatus according to the above embodiment.

【図8】上記の実施の形態に係る減圧乾燥装置の減圧乾
燥工程を示す工程図である。
FIG. 8 is a process diagram showing a reduced pressure drying process of the reduced pressure drying apparatus according to the above embodiment.

【図9】減圧乾燥時の気流の流れを説明する説明図であ
る。
FIG. 9 is an explanatory diagram illustrating the flow of airflow during reduced pressure drying.

【図10】本発明に用いられる整流板の他の例を示す説
明図である。
FIG. 10 is an explanatory diagram showing another example of the current plate used in the present invention.

【図11】本発明の実施の形態に係る減圧乾燥装置に用
いられる好ましいパージガスの供給系を示す縦断面図で
ある。
FIG. 11 is a vertical cross-sectional view showing a preferable purge gas supply system used in the reduced pressure drying apparatus according to the embodiment of the present invention.

【図12】本発明に用いられる気流規制部材の他の構成
例を示す説明図である。
FIG. 12 is an explanatory diagram showing another configuration example of the air flow restricting member used in the present invention.

【図13】従来の減圧乾燥装置を示す説明図である。FIG. 13 is an explanatory diagram showing a conventional vacuum drying device.

【図14】従来の減圧乾燥装置を用いたときの基板の周
縁部の塗布膜の状態を示す説明図である。
FIG. 14 is an explanatory diagram showing a state of a coating film on a peripheral portion of a substrate when a conventional vacuum drying device is used.

【図15】従来の減圧乾燥装置を用いたときの気流の流
れを示す説明図である。
FIG. 15 is an explanatory diagram showing the flow of airflow when a conventional reduced-pressure drying device is used.

【符号の説明】[Explanation of symbols]

R レチクル基板 4 載置台 40 気密容器 41 温度調節手段 42 凹部 5 蓋体 51 圧力調整部 54 真空ポンプ 6 整流板 61 気流規制部材 61a 気流規制部材の第1の部材 61b 気流規制部材の第2の部材 73 フィルタ R reticle substrate 4 table 40 airtight container 41 Temperature control means 42 recess 5 Lid 51 Pressure regulator 54 vacuum pump 6 current plate 61 Air flow control member 61a First member of air flow regulating member 61b Second member of air flow regulating member 73 Filter

【手続補正書】[Procedure amendment]

【提出日】平成13年11月26日(2001.11.
26)
[Submission date] November 26, 2001 (2001.11.
26)

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】図面[Document name to be corrected] Drawing

【補正対象項目名】全図[Correction target item name] All drawings

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【図1】 [Figure 1]

【図2】 [Fig. 2]

【図3】 [Figure 3]

【図5】 [Figure 5]

【図6】 [Figure 6]

【図10】 [Figure 10]

【図4】 [Figure 4]

【図13】 [Fig. 13]

【図15】 FIG. 15

【図7】 [Figure 7]

【図8】 [Figure 8]

【図11】 FIG. 11

【図9】 [Figure 9]

【図12】 [Fig. 12]

【図14】 FIG. 14

フロントページの続き (72)発明者 杉本 伸一 東京都港区赤坂五丁目3番6号 TBS放 送センター東京エレクトロン株式会社内 (72)発明者 酒井 宏司 東京都港区赤坂五丁目3番6号 TBS放 送センター東京エレクトロン株式会社内 Fターム(参考) 2H025 AB14 AB16 AB20 DA20 EA10 3L113 AA03 AB10 AC24 BA34 CB23 DA11 4D075 BB24Z BB56Z BB93Z CA48 DA06 DB13 DC19 DC22 EA07 EA45 4F042 AA02 AA07 AB00 BA06 BA16 BA27 DB01 DB17 DC01 DE01 DE07 DE09 DF07 5F046 JA02 JA22 JA27 KA04 Continued front page    (72) Inventor Shinichi Sugimoto             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited (72) Inventor Koji Sakai             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited F term (reference) 2H025 AB14 AB16 AB20 DA20 EA10                 3L113 AA03 AB10 AC24 BA34 CB23                       DA11                 4D075 BB24Z BB56Z BB93Z CA48                       DA06 DB13 DC19 DC22 EA07                       EA45                 4F042 AA02 AA07 AB00 BA06 BA16                       BA27 DB01 DB17 DC01 DE01                       DE07 DE09 DF07                 5F046 JA02 JA22 JA27 KA04

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 塗布液が表面に塗布された角型の基板を
減圧乾燥するための減圧乾燥装置において、 基板を載置するための基板載置部がその内部に設けられ
た気密容器と、 前記基板載置部に載置された基板の表面と隙間を介して
対向するように設けられた整流板と、 整流板の基板側の面および基板載置部の表面のうち少な
くとも一方に設けられ、塗布液から蒸発した溶剤成分で
形成される気流が所定の方向に向かうように規制するた
めの気流規制部材と、 前記気密容器内を減圧し、塗布液に含まれる溶剤成分を
蒸発させるための減圧排気手段と、を備えたことを特徴
とする減圧乾燥装置。
1. A vacuum drying apparatus for vacuum-drying a rectangular substrate having a coating liquid applied on its surface, wherein an airtight container having a substrate mounting portion for mounting the substrate therein, A rectifying plate provided so as to face the surface of the substrate placed on the substrate placing part with a gap, and provided on at least one of the surface of the rectifying plate on the substrate side and the surface of the substrate placing part. An air flow restricting member for restricting the air flow formed by the solvent component evaporated from the coating liquid so as to be directed in a predetermined direction, and depressurizing the airtight container to evaporate the solvent component contained in the coating liquid. A reduced pressure drying apparatus, comprising: a reduced pressure exhaust unit.
【請求項2】 気流規制部材は、気流が基板の一辺とそ
れに向い合う他の一辺に沿って伸びるように設けられる
ことを特徴とする請求項1記載の減圧乾燥装置。
2. The reduced-pressure drying apparatus according to claim 1, wherein the air flow regulating member is provided so that the air flow extends along one side of the substrate and the other side facing the substrate.
【請求項3】 気流規制部材は、基板の周縁に沿って設
けられると共に、当該気流規制部材に規制された気流が
基板の対角線の延長方向に向かうように、基板の隅部に
対応する位置には設けられていないことを特徴とする請
求項1記載の減圧乾燥装置。
3. The airflow regulating member is provided along the peripheral edge of the substrate, and is provided at a position corresponding to a corner of the substrate such that the airflow regulated by the airflow regulating member is directed in the extension direction of the diagonal line of the substrate. 2. The reduced pressure drying apparatus according to claim 1, wherein is not provided.
【請求項4】 気流規制部材は、基板の対角線の延長線
に沿ってかつ当該延長線を挟んで互いに対向する第1の
部材を備え、一の対角線に沿って設けられた第1の部材
の基板寄りの端部と、当該一の対角線に隣接する対角線
に沿って設けられた第1の部材の基板寄りの端部と、の
間は互いに繋がれていることを特徴とする請求項1記載
の減圧乾燥装置。
4. The airflow control member includes first members facing each other along an extension line of a diagonal line of the substrate and sandwiching the extension line, the first member being provided along one diagonal line. 2. The end portion near the substrate and the end portion near the substrate of the first member provided along the diagonal line adjacent to the one diagonal line are connected to each other. Vacuum dryer.
【請求項5】 基板載置部は、基板の温度を調整する温
調プレートと、この温調プレートに基板が収まるように
設けられた凹部と、を備えたことを特徴とする請求項1
ないし4のいずれかに記載の減圧乾燥装置。
5. The substrate placing section includes a temperature control plate for adjusting the temperature of the substrate, and a recessed portion provided in the temperature control plate so that the substrate fits in the temperature control plate.
5. The reduced pressure drying apparatus according to any one of 1 to 4.
【請求項6】 塗布液が表面に塗布された角型の基板を
気密容器内の基板載置部に載置する工程と、 次いで基板表面に隙間を介して整流板を対向させた状態
で気密容器内を減圧し、基板に塗布された塗布液から蒸
発した溶剤成分で形成される気流を前記整流板に設けら
れた気流規制部材により所定の方向に向かうように規制
する工程と、を備えたことを特徴とする減圧乾燥方法。
6. A step of placing a rectangular substrate having a surface coated with a coating liquid on a substrate placing portion in an airtight container, and then airtight with a current plate facing the substrate surface with a gap therebetween. A step of decompressing the inside of the container and regulating the air flow formed by the solvent component evaporated from the coating liquid applied to the substrate so as to be directed in a predetermined direction by an air flow regulating member provided on the rectifying plate. A method for drying under reduced pressure, which is characterized in that
JP2001354267A 2001-11-20 2001-11-20 Vacuum drying apparatus and vacuum drying method Expired - Fee Related JP3784305B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001354267A JP3784305B2 (en) 2001-11-20 2001-11-20 Vacuum drying apparatus and vacuum drying method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001354267A JP3784305B2 (en) 2001-11-20 2001-11-20 Vacuum drying apparatus and vacuum drying method

Publications (2)

Publication Number Publication Date
JP2003154303A true JP2003154303A (en) 2003-05-27
JP3784305B2 JP3784305B2 (en) 2006-06-07

Family

ID=19166152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001354267A Expired - Fee Related JP3784305B2 (en) 2001-11-20 2001-11-20 Vacuum drying apparatus and vacuum drying method

Country Status (1)

Country Link
JP (1) JP3784305B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100386582C (en) * 2004-12-24 2008-05-07 中国石油天然气集团公司 A pipeline vacuum drying method and device
JP2008192756A (en) * 2007-02-02 2008-08-21 Tokyo Electron Ltd Heating equipment and heating method
KR20160142638A (en) * 2015-06-03 2016-12-13 주식회사 글로벌하이테크 Drying Chamber of Vacuum Drying Equipment
CN107315325A (en) * 2017-07-18 2017-11-03 武汉华星光电半导体显示技术有限公司 Decompression drying equipment and decompression drying method
CN110548658A (en) * 2018-05-31 2019-12-10 株式会社斯库林集团 Reduced pressure drying device and reduced pressure drying method
CN112838180A (en) * 2021-01-07 2021-05-25 深圳市华星光电半导体显示技术有限公司 Vacuum drying device
CN113140480A (en) * 2020-01-19 2021-07-20 聚昌科技股份有限公司 Wafer heating module with upper cover guide plate for improving temperature uniformity

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102236271A (en) * 2010-04-29 2011-11-09 北京京东方光电科技有限公司 Equipment and method for drying photoresist

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100386582C (en) * 2004-12-24 2008-05-07 中国石油天然气集团公司 A pipeline vacuum drying method and device
JP2008192756A (en) * 2007-02-02 2008-08-21 Tokyo Electron Ltd Heating equipment and heating method
KR20160142638A (en) * 2015-06-03 2016-12-13 주식회사 글로벌하이테크 Drying Chamber of Vacuum Drying Equipment
KR101721129B1 (en) 2015-06-03 2017-03-29 주식회사 글로벌하이테크 Drying Chamber of Vacuum Drying Equipment
CN107315325A (en) * 2017-07-18 2017-11-03 武汉华星光电半导体显示技术有限公司 Decompression drying equipment and decompression drying method
WO2019015006A1 (en) * 2017-07-18 2019-01-24 武汉华星光电半导体显示技术有限公司 Pressure reducing and drying device and pressure reducing and drying method
CN107315325B (en) * 2017-07-18 2019-04-30 武汉华星光电半导体显示技术有限公司 Decompression drying equipment and decompression drying method
CN110548658A (en) * 2018-05-31 2019-12-10 株式会社斯库林集团 Reduced pressure drying device and reduced pressure drying method
CN110548658B (en) * 2018-05-31 2022-09-27 株式会社斯库林集团 Reduced pressure drying device and reduced pressure drying method
CN113140480A (en) * 2020-01-19 2021-07-20 聚昌科技股份有限公司 Wafer heating module with upper cover guide plate for improving temperature uniformity
CN112838180A (en) * 2021-01-07 2021-05-25 深圳市华星光电半导体显示技术有限公司 Vacuum drying device

Also Published As

Publication number Publication date
JP3784305B2 (en) 2006-06-07

Similar Documents

Publication Publication Date Title
JP2002313709A (en) Substrate treating device and transport arm
US20180021804A1 (en) Coating treatment method, computer storage medium, and coating treatment apparatus
US7024798B2 (en) Low-pressure dryer and low-pressure drying method
JP3989221B2 (en) Heat treatment apparatus and heat treatment method
US7205025B2 (en) Apparatus and method for drying under reduced pressure, and coating film forming apparatus
JP2003017402A (en) Method and system for processing substrate
JP4074593B2 (en) Vacuum drying apparatus and vacuum drying method
JP2002184682A (en) Method and device for heat treatment, and pattern formation method
JP2003154303A (en) Vacuum drying device and vacuum drying method
JP4113422B2 (en) Vacuum drying apparatus, coating film forming apparatus, and vacuum drying method
JP2001205165A (en) Treating device and treating method for substrate
JPH0536597A (en) Treatment method
JP3766336B2 (en) Vacuum drying apparatus and vacuum drying method
JP4164256B2 (en) Vacuum drying apparatus and vacuum drying method
JP3920638B2 (en) Vacuum dryer
JP3484035B2 (en) Substrate heat treatment method and apparatus
JP3806660B2 (en) Vacuum drying apparatus and vacuum drying method
JP3846873B2 (en) Vacuum drying apparatus and vacuum drying method
JP2002334825A (en) Device and method for treating substrate
JP3280798B2 (en) Heat treatment method and heat treatment apparatus for coating film
JP4033729B2 (en) Method for determining processing parameters for coating film formation and coating film forming apparatus
JP2002353132A (en) Coater and coating method of substrate
JP2000091224A (en) Method and device for heat treatment
JP4066255B2 (en) Substrate processing apparatus and substrate processing method
TWI894655B (en) Reduced pressure drying apparatus and reduced pressure drying method

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050915

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051004

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051205

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051228

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060307

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060314

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120324

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120324

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150324

Year of fee payment: 9

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees