[go: up one dir, main page]

JP2003194681A - TEM sample preparation method - Google Patents

TEM sample preparation method

Info

Publication number
JP2003194681A
JP2003194681A JP2001394138A JP2001394138A JP2003194681A JP 2003194681 A JP2003194681 A JP 2003194681A JP 2001394138 A JP2001394138 A JP 2001394138A JP 2001394138 A JP2001394138 A JP 2001394138A JP 2003194681 A JP2003194681 A JP 2003194681A
Authority
JP
Japan
Prior art keywords
sample
cross
section observation
tem
observation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001394138A
Other languages
Japanese (ja)
Inventor
Nobuo Washio
伸生 鷲尾
Naohisa Suzuki
直久 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP2001394138A priority Critical patent/JP2003194681A/en
Publication of JP2003194681A publication Critical patent/JP2003194681A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Sampling And Sample Adjustment (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a TEM (transmitance electron microscope) sample preparation method capable of preparing a sample changing the TEM observation direction, and improving the workability of the sample preparation. <P>SOLUTION: This method is constituted so as to laminate the observation sample 4 by using an existing FIB (focused ion beam) device, and to perform an extracting and sticking work of the laminated sample 4 by using an optical microscope having an existing micromanipulator equipped with an electrostatic pincette 10. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、TEM観察用試
料の作製方法に関し、平面観察後の平面観察箇所におけ
る断面方向の観察用TEM試料を作製し、又は断面観察
後の断面観察箇所における平面観察用あるいは異方向断
面観察用TEM試料を作製するTEM試料作製方法に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a sample for TEM observation, in which a TEM sample for observation in a cross-sectional direction at a plane observation location after plane observation is produced, or a plane observation at a cross-section observation location after cross-section observation. The present invention relates to a TEM sample preparation method for preparing a TEM sample for cross-section observation or cross-direction observation.

【0002】[0002]

【従来の技術】従来、TEM(透過型電子顕微鏡、ST
EM(走査型透過電子顕微鏡)を含む)で観察する試料
を作製する方法としては、例えば特開2000-146781 号公
報に記載されているものが知られている。この公報に記
載された試料作製方法は、マイクロサンプリング法を応
用して平面観察後の試料から同じ観察箇所の断面観察試
料を作製するものであり、まず平面観察用TEM試料を
作製し、平面で観察した箇所をFIB(集束イオンビー
ム)を用いて断面観察用の微小薄片試料に加工し、加工
した微小薄片試料をFIB装置内に装備された電子制御
のプローブを用いて摘出し、摘出した試料を観察用メッ
シュに貼り付け、観察用メッシュに貼り付けた微小薄片
試料をさらにFIBを用いて観察目的の厚さまで薄片化
し、薄片化した断面観察用TEM試料でTEM断面観察
を行っていた。
2. Description of the Related Art Conventionally, TEM (transmission electron microscope, ST
As a method for producing a sample to be observed with an EM (including a scanning transmission electron microscope), the method described in, for example, JP-A-2000-146781 is known. The sample preparation method described in this publication is to prepare a cross-section observation sample at the same observation location from a sample after plane observation by applying a micro-sampling method. The observed portion was processed into a minute thin piece sample for cross-section observation using FIB (Focused Ion Beam), and the processed minute thin piece sample was extracted using an electronically controlled probe installed in the FIB device, and the extracted sample Was attached to the observation mesh, and the micro-thin piece sample attached to the observation mesh was further thinned to a thickness for observation using FIB, and TEM cross-section observation was performed using the thinned cross-section observation TEM sample.

【0003】このような試料の作成から観察までの一連
の作業は、様々な装置が一体化したシステムによって行
われていた。
A series of operations from preparation of a sample to observation have been performed by a system in which various devices are integrated.

【0004】上記試料作製の具体的な作業手順として
は、まず研磨とイオンシニングにより平面観察用TEM
試料を作製し、TEM平面観察を行う(ステップ1)。
次に、平面観察後の平面観察用TEM試料をFIB装置
内に導入し(ステップ2)、FIBを用いて平面観察用
TEM試料から断面観察箇所を摘出して加工を施す(ス
テップ3)。その後、FIB装置のデポジション機能を
用いて摘出加工した試料をプローブに貼り付ける(ステ
ップ4)。続いて、試料が貼り付けられたプローブを移
動させ、FIB装置のデポジション機能を用いてプロー
ブに貼り付けられた試料をFIB/TEM共用観察用ホ
ルダーに移し替えて貼り付け、(ステップ5)、FIB
のミリング機能によりプローブを試料から切り離す(ス
テップ6)。次に、観察用ホルダーに貼り付けられた試
料を、FIBを用いて断面観察のための仕上げ(薄片
化)加工を施し、断面観察用TEM試料を作製する(ス
テップ7)。作製した断面観察用TEM試料を用いてT
EM観察を行う(ステップ8)。
As a concrete work procedure of the above-mentioned sample preparation, a TEM for plane observation is first carried out by polishing and ion thinning.
A sample is prepared and TEM plane observation is performed (step 1).
Next, the plane observation TEM sample after the plane observation is introduced into the FIB apparatus (step 2), and the cross-section observation portion is extracted from the plane observation TEM sample using the FIB and processed (step 3). After that, the sample excised and processed using the deposition function of the FIB device is attached to the probe (step 4). Then, the probe to which the sample is attached is moved, and the sample attached to the probe is transferred and attached to the FIB / TEM shared observation holder using the deposition function of the FIB device (step 5), FIB
The probe is separated from the sample by the milling function of (step 6). Next, the sample attached to the observation holder is subjected to finishing (thinning) processing for cross-section observation using FIB, and a TEM sample for cross-section observation is produced (step 7). Using the prepared TEM sample for cross-section observation, T
EM observation is performed (step 8).

【0005】大まかに分けて、上記のステップを経て平
面観察用TEM試料から断面観察用TEM試料が作製さ
れていた。このような作成過程において、上記ステップ
2〜ステップ7の作業は、システムに含まれるFIB装
置内で行われていた。したがって、FIB装置内では1
つの作業しか行うことができず、ステップ3,4の試料
の摘出、貼り付け作業と、ステップ7の仕上げ加工とを
同時に並行して行うことはできなかった。
Roughly speaking, a TEM sample for cross-section observation was prepared from a TEM sample for plane observation through the above steps. In such a creation process, the above steps 2 to 7 were performed in the FIB device included in the system. Therefore, in the FIB device, 1
Only one operation could be performed, and the sample extraction and sticking operations in steps 3 and 4 and the finishing process in step 7 could not be performed in parallel at the same time.

【0006】[0006]

【発明が解決しようとする課題】以上説明したように、
FIBを用いた従来のTEM試料の作製では、すべての
作業は装置が一体型に構成されたシステムにおいてなさ
れていた。このため、FIBを行う装置内で複数の作業
を同時に並行して行うことができず、作業性が低下する
といった不具合を招いていた。また、従来では、断面観
察用TEM試料から平面観察用TEM試料あるいは異方
向断面観察用TEM試料を作製することができなかっ
た。
As described above,
In conventional TEM sample preparation using FIB, all the work was done in a system where the device was integrally configured. For this reason, a plurality of works cannot be simultaneously performed in parallel in the apparatus for performing FIB, which causes a problem that workability is deteriorated. Further, conventionally, it was not possible to prepare a TEM sample for plane observation or a TEM sample for cross-section observation in different directions from a TEM sample for cross-section observation.

【0007】そこで、この発明は、上記に鑑みてなされ
たものであり、その目的とするところは、TEM観察方
向を変えた試料作製を可能にし、かつ試料作製における
作業性を向上させたTEM試料作製方法を提供すること
にある。
Therefore, the present invention has been made in view of the above, and an object of the present invention is to enable the preparation of a sample with a different TEM observation direction and to improve the workability in the sample preparation. It is to provide a manufacturing method.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、課題を解決する第1の手段は、ミリング法もしくは
FIB(集束イオンビーム)を用いて、TEM(透過型
電子顕微鏡)又はSTEM(走査型透過電子顕微鏡)に
より観察する平面観察用試料を作製する第1の工程と、
前記第1の工程により作製した平面観察用試料をTEM
により観察した後、観察後の平面観察試料から所望の断
面観察箇所を探し出し、FIB装置に備えられたデポジ
ション機能を用いて、探し出した断面観察箇所の上部に
矩形状のデポジション膜を形成する第2の工程と、前記
FIB装置を用いて、前記第2の工程によりデポジショ
ン膜が形成された断面観察用試料の一部を薄片化し、薄
片化された断面観察試料を他の試料部分から分離するた
めの切り込みを形成し、薄片化された断面観察試料の断
面観察箇所を、観察可能な程度にまでさらに薄片化する
第3の工程と、マイクロマニピュレータに装備されて帯
電された静電ピンセットに、前記第3の工程で薄片化さ
れた断面観察試料を吸着して、他の試料部分から薄片化
された断面観察試料を分離する第4の工程と、前記第4
の工程で前記静電ピンセットに吸着された断面観察試料
を支持部材の支持膜に貼り付ける第5の工程とを有する
ことを特徴とする。
In order to achieve the above-mentioned object, the first means for solving the problems is to use a milling method or FIB (focused ion beam), and use TEM (transmission electron microscope) or STEM ( A first step of producing a flat surface observation sample to be observed with a scanning transmission electron microscope),
The plane observation sample produced by the first step is used as a TEM.
After observing with, the desired cross-section observation point is searched for from the flat-plane observation sample after the observation, and a rectangular deposition film is formed on the searched cross-section observation point using the deposition function provided in the FIB device. Second step and using the FIB apparatus, a part of the cross-section observation sample on which the deposition film is formed by the second step is thinned, and the thinned cross-section observation sample is separated from other sample parts. Third step of forming a notch for separation and thinning the cross-section observation point of the thinned sample to the extent that it can be observed, and electrostatic tweezers equipped with a micromanipulator and charged. And a fourth step of adsorbing the cross-section observation sample thinned in the third step to separate the cross-section observation sample thinned from other sample portions, and the fourth step.
And a fifth step of attaching the cross-section observation sample adsorbed to the electrostatic tweezers to the supporting film of the supporting member in the step of.

【0009】第2の手段は、ミリング法もしくはFIB
(集束イオンビーム)を用いて、TEM(透過型電子顕
微鏡)又はSTEM(走査型透過電子顕微鏡)により観
察する断面観察用試料を作製する第1の工程と、前記第
1の工程により作製した断面観察用試料をTEMにより
観察した後、観察後の断面観察試料から所望の平面又は
異方向断面観察箇所を探し出し、FIB装置に備えられ
たデポジション機能を用いて、探し出した平面又は異方
向断面観察箇所の上部に矩形状のデポジション膜を形成
する第2の工程と、前記FIB装置を用いて、前記第2
の工程によりデポジション膜が形成された平面又は異方
向断面観察用試料の一部を薄片化し、薄片化された平面
又は異方向断面観察試料を他の試料部分から分離するた
めの切り込みを形成し、薄片化された平面又は異方向断
面観察試料の平面又は異方向断面観察箇所を、観察可能
な程度にまでさらに薄片化する第3の工程と、マイクロ
マニピュレータに装備されて帯電された静電ピンセット
に、前記第3の工程で薄片化された平面又は異方向断面
観察試料を吸着して、他の試料部分から薄片化された平
面又は異方向断面観察試料を分離する第4の工程と、前
記第4の工程で前記静電ピンセットに吸着された平面又
は異方向断面観察試料を支持部材の支持膜に貼り付ける
第5の工程とを有することを特徴とする。
The second means is the milling method or FIB.
A first step of producing a cross-section observation sample to be observed with a TEM (transmission electron microscope) or STEM (scanning transmission electron microscope) using (focused ion beam), and a cross section produced by the first step After observing the observation sample by TEM, find the desired plane or different-direction cross-section observation point from the cross-section observation sample after observation, and use the deposition function provided in the FIB device to observe the found plane or different-direction cross section A second step of forming a rectangular deposition film on the upper part of the portion, and the second step using the FIB apparatus.
Part of the sample for observing the cross-section or the different direction cross section on which the deposition film is formed is thinned by the step of, and a cut is formed to separate the thinned sample for observing the cross section or different direction cross-section from other sample parts. Observation of sliced plane or cross-section in different direction Third step of further thinning the plane or cross-section observation point of sample to the extent that it can be observed, and electrostatic tweezers charged in the micromanipulator A fourth step of adsorbing the plane or different-direction cross-section observation sample thinned in the third step, and separating the thin-plane or different-direction cross-section observation sample from other sample portions; And a fifth step of attaching the flat surface or different-direction cross-section observation sample adsorbed to the electrostatic tweezers in the fourth step to the supporting film of the supporting member.

【0010】[0010]

【発明の実施の形態】以下、図面を用いてこの発明の実
施形態を説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

【0011】図1〜図9はこの発明の一実施形態に係る
TEM試料作製方法の手順を示す図である。この実施形
態の特徴とするところは、既存のFIB(集束イオンビ
ーム)装置と、例えばバイオテクノロジーの分野におけ
る遺伝子操作等に使用されている既存の静電ピンセット
を装備したマイクロマニピュレータシステムを用いて、
TEM(STEMを含む)で観察した平面試料の所望箇
所の断面観察用TEM試料を作製し、又はTEMで観察
した断面試料の所望箇所の平面観察用TEM試料及び異
方向断面観察用TEM試料を作製することにある。
1 to 9 are views showing the procedure of a TEM sample manufacturing method according to an embodiment of the present invention. The feature of this embodiment is that an existing FIB (Focused Ion Beam) apparatus and a micromanipulator system equipped with an existing electrostatic tweezers used for gene manipulation in the field of biotechnology are used,
A TEM sample for cross-section observation of a desired portion of a plane sample observed by TEM (including STEM) is prepared, or a TEM sample for plane observation and a TEM sample for cross-section observation of different direction of a cross-section sample observed by TEM are produced. To do.

【0012】最初に、TEMによる平面観察後の試料に
ついて、平面観察で確認した所望箇所の断面観察用TE
M試料を作製する場合の作製手順について説明する。
First, for a sample after plane observation by TEM, TE for cross-section observation of a desired portion confirmed by plane observation.
A manufacturing procedure for manufacturing the M sample will be described.

【0013】まず、ミリング(Milling )法またはFI
Bを用いて、試料の観察所望箇所を薄片化して平面観察
用TEM試料を作製する。ミリング法で作製した場合に
は、図1(同図(A)は平面図、同図(B)は断面図、
同図(C)は同図(B)の一部断面拡大図)に示すよう
に、全体の試料1に対して観察所望箇所2の部分が薄片
化される。一方、FIBを用いて作製した場合には、図
2に示すように、試料1に対して観察所望箇所2の部分
が切削されて薄片化される。いずれの作製方法にあって
も、観察所望箇所2の残し膜厚3は、TEMで観察所望
箇所2の様子が観察できる程度の厚さとする。例えば、
一般的な半導体装置の故障解析の場合には、残し膜厚3
は、0.1μm〜1.0μm程度となる(ステップ1)。
First, the milling method or FI
Using B, a desired observation portion of the sample is thinned to prepare a TEM sample for plane observation. When manufactured by the milling method, FIG. 1 (FIG. 1A is a plan view, FIG.
As shown in FIG. 2C, which is an enlarged view of a partial cross section of FIG. 1B, the observation target portion 2 is thinned with respect to the entire sample 1. On the other hand, in the case of using the FIB, as shown in FIG. 2, the portion of the sample 1 to be observed 2 is cut and thinned. In any of the manufacturing methods, the remaining film thickness 3 at the desired observation portion 2 is set to a thickness at which the state of the desired observation portion 2 can be observed with a TEM. For example,
In the case of general semiconductor device failure analysis, the remaining film thickness is 3
Is about 0.1 μm to 1.0 μm (step 1).

【0014】次に、上記工程で作製された平面観察用T
EM試料においてTEMで平面観察を行う。観察結果
は、例えば写真または電子画像として出力し、観察所望
箇所2の位置および形状を確認する(ステップ2)。
Next, the plane observation T produced in the above process
The EM sample is observed on a plane by TEM. The observation result is output as, for example, a photograph or an electronic image, and the position and shape of the desired observation portion 2 are confirmed (step 2).

【0015】次に、FIBを用いて平面観察用TEM試
料から断面観察用TEM試料を作製する際のイオンビー
ムによる試料表面へのダメージを回避するために、図3
に示すように試料4の表面にPt、Au等のスパッタ膜や、
カーボン等の蒸着膜からなる保護膜5を形成し、試料表
面を保護膜5で覆う(ステップ3)。
Next, in order to avoid damage to the sample surface by the ion beam when the TEM sample for cross-section observation is manufactured from the TEM sample for plane observation using FIB, FIG.
As shown in, the sputtered film of Pt, Au, etc. on the surface of sample 4,
A protective film 5 made of a vapor deposition film of carbon or the like is formed, and the sample surface is covered with the protective film 5 (step 3).

【0016】次に、保護膜5が形成された試料4をFI
B装置内に導入し、平面観察所望箇所2と同じ箇所の断
面観察所望箇所2を探し出す(ステップS4)。
Next, the sample 4 having the protective film 5 formed thereon was subjected to FI.
It is introduced into the apparatus B and a desired cross-section observation point 2 that is the same as the plane observation desired point 2 is searched (step S4).

【0017】続いて、試料4の断面観察所望箇所2の表
面上に、FIB装置のデポジション機能を用いて図4に
示すように、直方体状のデポジション膜6を成膜する。
このデポジション膜6は、FIB装置で形成可能な、例
えばタングステン、白金、カーボン又はシリコン酸化膜
等からなり、直方体の高さは10μm 程度、長辺(幅)は
10μm 程度、短辺(厚さ)は2〜4μm 程度となる。この
デポジション膜6は、後述するマイクロマニピュレータ
に装備された静電ピンセットで断面観察用TEM試料の
摘出作業を容易にするためのものである(ステップ
5)。
Subsequently, a rectangular parallelepiped deposition film 6 is formed on the surface of the cross-section observation desired portion 2 of the sample 4 as shown in FIG. 4 by using the deposition function of the FIB apparatus.
The deposition film 6 is made of, for example, tungsten, platinum, carbon, or a silicon oxide film that can be formed by an FIB apparatus, and has a rectangular parallelepiped height of about 10 μm and a long side (width).
The length is about 10 μm and the short side (thickness) is about 2 to 4 μm. The deposition film 6 is for facilitating the work of extracting the TEM sample for cross-section observation with electrostatic tweezers equipped in the micromanipulator described later (step 5).

【0018】次に、FIBを用いて図5(同図(A)は
平面図、同図(B)は斜視図)に示すように、図4に示
す試料4に対して上方から集束イオンビーム7を照射し
てミリング加工を行い、試料4ならびにデポジション膜
6の一部を薄片化する(ステップ6)。
Next, using the FIB, as shown in FIG. 5 (FIG. 5A is a plan view and FIG. 5B is a perspective view), a focused ion beam is applied to the sample 4 shown in FIG. 4 from above. Milling is performed by irradiating 7 to thin the sample 4 and a part of the deposition film 6 (step 6).

【0019】次に、断面観察所望箇所2を最終膜厚にす
る前に、例えば(最終膜厚+0.5μm )程度の膜厚で薄
片化の加工を終了する。その後、薄片化した試料4を45
度ないしは60度に傾けて、上方から集束イオンビームを
照射し、図6(同図(A)は正面図、同図(B)は平面
図)に示すように薄片化した試料4を切り出すための切
り込み8を試料4の高さ方向側に形成する。この時、試
料4に切り込み8をすべて入れると、薄片化した試料4
が脱落するため、脱落防止のためにデポジション膜6に
切り残し部分9を設ける(ステップ7)。
Next, before the desired portion 2 for cross-section observation is made to have the final film thickness, the thinning process is completed with a film thickness of, for example, (final film thickness + 0.5 μm). After that, sliced sample 4 is
In order to cut out the thinned sample 4 as shown in FIG. 6 (FIG. 6A is a front view, FIG. 6B is a plan view) by irradiating a focused ion beam from above with tilting at an angle of 60 degrees or 60 degrees. The notch 8 is formed on the height direction side of the sample 4. At this time, if all the cuts 8 are made in the sample 4, the thinned sample 4
Are removed, the uncut portion 9 is provided in the deposition film 6 to prevent the removal (step 7).

【0020】次に、断面観察所望箇所2が複数ある場合
には、上記ステップ4〜ステップ7に示す作業を観察所
望箇所2の分だけ繰り返して行う(ステップ8)。
Next, when there are a plurality of desired cross-section observation points 2, the operations shown in steps 4 to 7 are repeated for the desired observation points 2 (step 8).

【0021】次に、試料4の傾きを元に戻し、FIBを
用いて全ての観察所望箇所2について観察が可能な程度
にまで薄片化する最終仕上げ加工を施す(ステップ
9)。
Next, the inclination of the sample 4 is returned to its original state, and final finishing processing is performed by using the FIB to thin all the desired observation portions 2 to such an extent that observation is possible (step 9).

【0022】次に、薄片化試料4をFIB装置から取り
出し、マイクロマニピュレータシステムが組み込まれた
光学顕微鏡へ移す(ステップ10)。
Next, the sliced sample 4 is taken out from the FIB apparatus and transferred to an optical microscope incorporating a micromanipulator system (step 10).

【0023】次に、マイクロマニピュレータシステムに
は油圧駆動式の静電ピンセットが装備されており、この
静電ピンセットはガラス製で、直径は1〜10μm程度であ
る。この静電ピンセットを使用して、図7(A)に示す
ように薄片化試料4の側面に静電ピンセット10を押し
あて、図7(B)に示すように薄片化試料4を切り残し
部分9から分離させる。この時、静電ピンセット10は
あらかじめ静電気により帯電しており、分離した薄片化
試料4は静電ピンセット10に帯電された静電気により
吸着される(ステップ11)。
Next, the micromanipulator system is equipped with hydraulically driven electrostatic tweezers, which is made of glass and has a diameter of about 1 to 10 μm. Using this electrostatic tweezers, the electrostatic tweezers 10 are pressed against the side surface of the thinned sample 4 as shown in FIG. 7A, and the thinned sample 4 is left uncut as shown in FIG. 7B. Separate from 9. At this time, the electrostatic tweezers 10 are charged with static electricity in advance, and the separated thinned sample 4 is adsorbed by the static electricity charged by the electrostatic tweezers 10 (step 11).

【0024】次に、図8(同図(A)は平面図、同図
(B)は断面図)に示すような有機支持膜11付き金属
メッシュ12を用意し、図9(同図(A)は平面図、同
図(B)は断面図)に示すように、この金属メッシュ1
2上の支持膜11に静電ピンセット10に吸着された薄
片化試料4を貼り付ける。一般的に、静電ピンセット1
0に帯電された静電気力よりも有機支持膜11の粘着力
の方が強力なため、薄片化試料4は静電ピンセット10
から有機支持膜へ貼り付く(ステップ12)。
Next, a metal mesh 12 with an organic support film 11 as shown in FIG. 8 (FIG. 8A is a plan view, and FIG. 8B is a sectional view) is prepared, and FIG. ) Is a plan view and (B) is a cross-sectional view).
The thinned sample 4 adsorbed by the electrostatic tweezers 10 is attached to the support film 11 on 2. Generally, electrostatic tweezers 1
Since the adhesive force of the organic support film 11 is stronger than the electrostatic force charged to 0, the exfoliated sample 4 has electrostatic tweezers 10
To the organic support film (step 12).

【0025】次に、複数の観察所望箇所2がある場合に
は、上記ステップ11、12を繰り返して行う(ステッ
プ13)。
Next, when there are a plurality of desired observation points 2, the above steps 11 and 12 are repeated (step 13).

【0026】最後に、金属メッシュ12に貼り付けられ
た薄片化試料4をTEMの観察用のホルダーへ導入し、
TEM観察を行う(ステップ14)。
Finally, the sliced sample 4 attached to the metal mesh 12 is introduced into a TEM holder for observation,
TEM observation is performed (step 14).

【0027】このように、上記実施形態において、上記
ステップ4〜ステップ9までの断面観察用の試料の薄片
化作業は、FIB装置において行われ、上記ステップ1
0〜ステップ13までの薄片化試料の切り出し、貼り付
け作業は、FIB装置とは異なる別の装置の静電ピンセ
ットを装備したマイクロマニピュレータシステム付きの
光学顕微鏡で行っている。
As described above, in the above embodiment, the thinning work of the sample for cross-section observation in the above Step 4 to Step 9 is performed in the FIB apparatus, and the above Step 1 is performed.
The cutting out and sticking work of the sliced sample from 0 to step 13 is performed by an optical microscope with a micromanipulator system equipped with electrostatic tweezers of a device different from the FIB device.

【0028】これにより、試料の薄片化作業と薄片化さ
れた試料の切り出しと貼り付け作業を同時に並行して実
施することが可能となる。したがって、作業性が向上
し、スループットを高めることができる。また、FIB
装置に従来のように電子制御のプローブを組み込むとい
った特別な改造を施す必要がなく、既存のFIB装置
に、既存の静電ピンセットを装備したマイクロマニピュ
レータシステム付き光学顕微鏡を導入するだけで容易に
実施することができる。
As a result, it becomes possible to simultaneously carry out the sample thinning work and the thinned sample cutting out and pasting work in parallel. Therefore, workability is improved and throughput can be increased. Also, FIB
There is no need to make special modifications such as incorporating an electronically controlled probe into the device, and it is easy to do by simply introducing an optical microscope with a micromanipulator system equipped with existing electrostatic tweezers into the existing FIB device. can do.

【0029】また、試料の観察所望箇所の上部に直方体
上のデポジション膜6を形成することにより、広い断面
積の薄片化試料を得ることができ、この結果マイクロマ
ニピュレータに装備された静電ピンセットにより薄片化
された試料を容易に摘出ことが可能となる。
Further, by forming the deposition film 6 on the rectangular parallelepiped on the desired portion of the sample for observation, it is possible to obtain a thin sample having a wide cross-sectional area, and as a result, electrostatic tweezers equipped on the micromanipulator. By this, it becomes possible to easily extract the thinned sample.

【0030】次に、TEMによる断面観察後の試料につ
いて、断面観察で確認した観察所望箇所の平面または異
方向断面観察用TEM試料を作製する場合の実施形態を
図1〜図9を参照して説明する。
Next, referring to FIGS. 1 to 9, an embodiment in the case of producing a TEM sample for observing a plane or a different direction cross-section of an observation desired portion confirmed by cross-section observation of a sample after cross-section observation by TEM will be described. explain.

【0031】まず、ミリング(Milling )法またはFI
Bを用いて、試料の観察所望箇所を薄片化して断面観察
用TEM試料を作製する。ミリング法で作製した場合に
は、図1(同図(A)は平面図、同図(B)は断面図、
同図(C)は同図(B)の一部断面拡大図)に示すよう
に、全体の試料1に対して観察所望箇所2の部分が薄片
化される。一方、FIBを用いて作製した場合には、図
2に示すように、試料1に対して観察所望箇所2の部分
が切削されて薄片化される。いずれの作製方法にあって
も、観察所望箇所2の残し膜厚3は、TEMで観察所望
箇所2の様子が観察できる程度の厚さとする。例えば、
一般的な半導体装置の故障解析の場合には、残し膜厚3
は、0.1μm〜1.0μm程度となる(ステップ1)。
First, the milling method or FI
Using B, the desired observation portion of the sample is thinned to prepare a TEM sample for cross-section observation. When manufactured by the milling method, FIG. 1 (FIG. 1A is a plan view, FIG.
As shown in FIG. 2C, which is an enlarged view of a partial cross section of FIG. 1B, the observation target portion 2 is thinned with respect to the entire sample 1. On the other hand, in the case of using the FIB, as shown in FIG. 2, the portion of the sample 1 to be observed 2 is cut and thinned. In any of the manufacturing methods, the remaining film thickness 3 at the desired observation portion 2 is set to a thickness at which the state of the desired observation portion 2 can be observed with a TEM. For example,
In the case of general semiconductor device failure analysis, the remaining film thickness is 3
Is about 0.1 μm to 1.0 μm (step 1).

【0032】次に、上記工程で作製された断面観察用T
EM試料においてTEMで平面観察を行う。観察結果
は、例えば写真または電子画像として出力し、観察所望
箇所2の位置および形状を確認する(ステップ2)。
Next, the T for cross-section observation manufactured in the above process
The EM sample is observed on a plane by TEM. The observation result is output as, for example, a photograph or an electronic image, and the position and shape of the desired observation portion 2 are confirmed (step 2).

【0033】次に、FIBを用いて断面観察用TEM試
料から平面観察用TEM試料を作製する際のイオンビー
ムによる試料表面へのダメージを回避するために、図3
に示すように試料4の表面にPt、Au等のスパッタ膜や、
カーボン等の蒸着膜からなる保護膜5を形成し、試料表
面を保護膜5で覆う(ステップ3)。
Next, in order to avoid damage to the sample surface due to the ion beam when a plane observation TEM sample is produced from a cross-section observation TEM sample using FIB, FIG.
As shown in, the sputtered film of Pt, Au, etc. on the surface of sample 4,
A protective film 5 made of a vapor deposition film of carbon or the like is formed, and the sample surface is covered with the protective film 5 (step 3).

【0034】次に、保護膜5が形成された試料4をFI
B装置内に導入し、断面観察所望箇所2と同じ箇所の平
面観察所望箇所2を探し出す(ステップS4)。
Then, the sample 4 having the protective film 5 formed thereon was subjected to FI.
It is introduced into the apparatus B, and the desired point 2 for planar observation that is the same as the desired point 2 for observing a cross section is searched (step S4).

【0035】続いて、試料4の平面観察所望箇所2の表
面上に、FIB装置のデポジション機能を用いて図4に
示すように、直方体状のデポジション膜6を成膜する。
このデポジション膜6は、FIB装置で形成可能な、例
えばタングステン、白金、カーボン又はシリコン酸化膜
等からなり、直方体の高さは10μm 程度、長辺(幅)は
10μm 程度、短辺(厚さ)は2〜4μm 程度となる。この
デポジション膜6は、後述するマイクロマニピュレータ
に装備された静電ピンセットで平面観察用TEM試料の
摘出作業を容易にするためのものである(ステップ
5)。
Subsequently, as shown in FIG. 4, a rectangular parallelepiped deposition film 6 is formed on the surface of the desired spot 2 for planar observation of the sample 4 by using the deposition function of the FIB apparatus.
The deposition film 6 is made of, for example, tungsten, platinum, carbon, or a silicon oxide film that can be formed by an FIB apparatus, and has a rectangular parallelepiped height of about 10 μm and a long side (width).
The length is about 10 μm and the short side (thickness) is about 2 to 4 μm. The deposition film 6 is for facilitating the work of extracting the TEM sample for planar observation with electrostatic tweezers equipped on the micromanipulator described later (step 5).

【0036】次に、FIBを用いて図5(同図(A)は
平面図、同図(B)は斜視図)に示すように、図4に示
す試料4に対して上方から集束イオンビーム7を照射し
てミリング加工を行い、試料4ならびにデポジション膜
6の一部を薄片化する(ステップ6)。
Next, using the FIB, as shown in FIG. 5 (FIG. 5A is a plan view and FIG. 5B is a perspective view), a focused ion beam is applied to the sample 4 shown in FIG. 4 from above. Milling is performed by irradiating 7 to thin the sample 4 and a part of the deposition film 6 (step 6).

【0037】次に、平面観察所望箇所2を最終膜厚にす
る前に、例えば(最終膜厚+0.5μm )程度の膜厚で薄
片化の加工を終了する。その後、薄片化した試料4を45
度ないしは60度に傾けて、上方から集束イオンビームを
照射し、図6(同図(A)は正面図、同図(B)は平面
図)に示すように薄片化した試料4を切り出すための切
り込み8を試料4の高さ方向側に形成する。この時、試
料4に切り込み8をすべて入れると、薄片化した試料4
が脱落するため、脱落防止のためにデポジション膜6に
切り残し部分9を設ける(ステップ7)。
Next, before the final plane observation desired portion 2 is made to have the final film thickness, the thinning process is completed with a film thickness of, for example, (final film thickness + 0.5 μm). After that, sliced sample 4 is
In order to cut out the thinned sample 4 as shown in FIG. 6 (FIG. 6A is a front view, FIG. 6B is a plan view) by irradiating a focused ion beam from above with tilting at an angle of 60 degrees or 60 degrees. The notch 8 is formed on the height direction side of the sample 4. At this time, if all the cuts 8 are made in the sample 4, the thinned sample 4
Are removed, the uncut portion 9 is provided in the deposition film 6 to prevent the removal (step 7).

【0038】次に、平面観察所望箇所2が複数ある場合
には、上記ステップ4〜ステップ7に示す作業を観察所
望箇所2の分だけ繰り返して行う(ステップ8)。
Next, when there are a plurality of desired spots 2 for planar observation, the operations shown in steps 4 to 7 are repeated for the desired spots 2 for observation (step 8).

【0039】次に、試料4の傾きを元に戻し、FIBを
用いて全ての観察所望箇所2について観察が可能な程度
にまで薄片化する最終仕上げ加工を施す(ステップ
9)。
Next, the inclination of the sample 4 is returned to the original state, and the final finishing process is performed by using the FIB to thin all the desired observation portions 2 to such an extent that observation is possible (step 9).

【0040】次に、薄片化試料4をFIB装置から取り
出し、マイクロマニピュレータシステムが組み込まれた
光学顕微鏡へ移す(ステップ10)。
Next, the sliced sample 4 is taken out from the FIB apparatus and transferred to an optical microscope incorporating a micromanipulator system (step 10).

【0041】次に、マイクロマニピュレータシステムに
は油圧駆動式の静電ピンセットが装備されており、この
静電ピンセットはガラス製で、直径は1〜10μm程度であ
る。この静電ピンセットを使用して、図7(A)に示す
ように薄片化試料4の側面に静電ピンセット10を押し
あて、図7(B)に示すように薄片化試料4を切り残し
部分9から分離させる。この時、静電ピンセット10は
あらかじめ静電気により帯電しており、分離した薄片化
試料4は静電ピンセット10に帯電された静電気により
吸着される(ステップ11)。
Next, the micromanipulator system is equipped with hydraulic driven electrostatic tweezers, which is made of glass and has a diameter of about 1 to 10 μm. Using this electrostatic tweezers, the electrostatic tweezers 10 are pressed against the side surface of the thinned sample 4 as shown in FIG. 7A, and the thinned sample 4 is left uncut as shown in FIG. 7B. Separate from 9. At this time, the electrostatic tweezers 10 are charged with static electricity in advance, and the separated thinned sample 4 is adsorbed by the static electricity charged by the electrostatic tweezers 10 (step 11).

【0042】次に、図8(同図(A)は平面図、同図
(B)は断面図)に示すような有機支持膜11付き金属
メッシュ12を用意し、図9(同図(A)は平面図、同
図(B)は断面図)に示すように、この金属メッシュ1
2上の支持膜11に静電ピンセット10に吸着された薄
片化試料4を貼り付ける。一般的に、静電ピンセット1
0に帯電された静電気力よりも有機支持膜11の粘着力
の方が強力なため、薄片化試料4は静電ピンセット10
から有機支持膜へ貼り付く(ステップ12)。
Next, a metal mesh 12 with an organic support film 11 as shown in FIG. 8 (FIG. 8A is a plan view and FIG. 8B is a cross-sectional view) is prepared. ) Is a plan view and (B) is a cross-sectional view).
The thinned sample 4 adsorbed by the electrostatic tweezers 10 is attached to the support film 11 on 2. Generally, electrostatic tweezers 1
Since the adhesive force of the organic support film 11 is stronger than the electrostatic force charged to 0, the exfoliated sample 4 has electrostatic tweezers 10
To the organic support film (step 12).

【0043】次に、複数の観察所望箇所2がある場合に
は、上記ステップ11、12を繰り返して行う(ステッ
プ13)。
Next, when there are a plurality of desired observation points 2, the above steps 11 and 12 are repeated (step 13).

【0044】最後に、金属メッシュ12に貼り付けられ
た薄片化試料4をTEMの観察用のホルダーへ導入し、
TEM観察を行う(ステップ14)。
Finally, the sliced sample 4 attached to the metal mesh 12 was introduced into a holder for TEM observation,
TEM observation is performed (step 14).

【0045】このように、上記実施形態においては、上
記ステップ4〜ステップ9までの平面観察用の試料の薄
片化作業は、FIB装置において行われ、上記ステップ
10〜ステップ13までの薄片化試料の切り出し、貼り
付け作業は、FIB装置とは異なる別の装置の静電ピン
セットを装備したマイクロマニピュレータシステム付き
の光学顕微鏡で行っている。
As described above, in the above embodiment, the thinning work of the sample for plane observation in the above steps 4 to 9 is performed in the FIB apparatus, and the thinning sample in the above steps 10 to 13 is performed. The cutting and pasting work is performed by an optical microscope with a micromanipulator system equipped with electrostatic tweezers of a device different from the FIB device.

【0046】このような実施形態においても、先の実施
形態と同様な効果を得ることができる。また、TEMに
よる断面観察後の試料から断面観察で確認した観察所望
箇所の平面観察用TEM試料あるいは異方向断面観察用
TEM試料の作製が可能となる。
Also in such an embodiment, the same effect as in the previous embodiment can be obtained. In addition, it becomes possible to manufacture a TEM sample for plane observation or a TEM sample for cross-section observation in different directions from a sample after cross-section observation by TEM, which is confirmed by cross-section observation.

【0047】[0047]

【発明の効果】以上説明したように、この発明によれ
ば、既存のFIB装置を用いて観察用試料の薄片化加工
を行い、静電ピンセットを装備した既存のマイクロマニ
ピュレータ付きの光学顕微鏡を用いて、薄片化試料の摘
出と貼り付け作業を行うようにしたので、それぞれの装
置を独立して稼働させることによりそれぞれの作業を同
時に並行して実行することが可能となり、作業性が向上
し、処理のスループットを高めることができる。
As described above, according to the present invention, the sample for observation is thinned by using the existing FIB device, and the existing optical microscope with the micromanipulator equipped with electrostatic tweezers is used. By doing so, the work of extracting and attaching the sliced sample was performed, so by operating each device independently, it is possible to perform each work in parallel at the same time, improving workability, The processing throughput can be increased.

【0048】また、既存の装置を使用することで、試料
作製のためのシステムを容易に導入することが可能とな
り、コストを低減することができる。
Further, by using the existing apparatus, it becomes possible to easily introduce a system for sample preparation, and it is possible to reduce the cost.

【0049】さらに、TEMによる断面観察後の試料か
ら断面観察で確認した所望箇所の平面観察用TEM試料
あるいは異方向断面観察用TEM試料の作製が可能とな
る。
Further, a TEM sample for plane observation or a TEM sample for different-direction cross-section observation of a desired portion confirmed by cross-section observation can be prepared from the sample after cross-section observation by TEM.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施形態に係るTEM試料作製方
法の手順において、ミリング法で作製された試料を示す
図である。
FIG. 1 is a diagram showing a sample manufactured by a milling method in a procedure of a TEM sample manufacturing method according to an embodiment of the present invention.

【図2】この発明の一実施形態に係るTEM試料作製方
法の手順において、FIBで作製された試料を示す図で
ある。
FIG. 2 is a diagram showing a sample manufactured by FIB in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【図3】この発明の一実施形態に係るTEM試料作製方
法の手順において、保護膜が形成された試料を示す図で
ある。
FIG. 3 is a diagram showing a sample on which a protective film is formed in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【図4】この発明の一実施形態に係るTEM試料作製方
法の手順において、直方体のデポジション膜が形成され
た試料を示す図である。
FIG. 4 is a diagram showing a sample in which a rectangular parallelepiped deposition film is formed in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【図5】この発明の一実施形態に係るTEM試料作製方
法の手順において、FIBにより薄片化された試料を示
す図である。
FIG. 5 is a view showing a sample thinned by FIB in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【図6】この発明の一実施形態に係るTEM試料作製方
法の手順において、切り込み加工を施した試料を示す図
である。
FIG. 6 is a view showing a sample in which a cutting process is performed in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【図7】この発明の一実施形態に係るTEM試料作製方
法の手順において、試料を分離する様子を示す図であ
る。
FIG. 7 is a diagram showing how a sample is separated in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【図8】この発明の一実施形態に係るTEM試料作製方
法の手順において、支持膜付きの金属メッシュを示す図
である。
FIG. 8 is a diagram showing a metal mesh with a support film in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【図9】この発明の一実施形態に係るTEM試料作製方
法の手順において、金属メッシュの支持膜に貼り付けら
れた試料を示す図である。
FIG. 9 is a diagram showing a sample attached to a support film of a metal mesh in the procedure of the TEM sample manufacturing method according to the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1,4 試料 2 観察所望箇所 3 残し膜厚 5 保護膜 6 デポジション膜 7 イオンビーム 8 切り込み 9 切り残し部分 10 静電ピンセット 11 支持膜 12 金属メッシュ 1,4 sample 2 desired observation point 3 Leftover film thickness 5 protective film 6 Deposition film 7 ion beam 8 notches 9 Uncut portion 10 electrostatic tweezers 11 Supporting membrane 12 metal mesh

───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 直久 神奈川県川崎市川崎区駅前本町25番地1 東芝マイクロエレクトロニクス株式会社内 Fターム(参考) 2G052 CA04 CA45 EC01 GA32 GA33 GA34 GA35 JA07 5C001 BB07 CC01    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Naohisa Suzuki             25-1 Honmachi, Kawasaki-ku, Kawasaki-shi, Kanagawa             Toshiba Microelectronics Co., Ltd. F term (reference) 2G052 CA04 CA45 EC01 GA32 GA33                       GA34 GA35 JA07                 5C001 BB07 CC01

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ミリング法もしくはFIB(集束イオン
ビーム)を用いて、TEM(透過型電子顕微鏡)又はS
TEM(走査型透過電子顕微鏡)により観察する平面観
察用試料を作製する第1の工程と、 前記第1の工程により作製した平面観察用試料をTEM
により観察した後、観察後の平面観察試料から所望の断
面観察箇所を探し出し、FIB装置に備えられたデポジ
ション機能を用いて、探し出した断面観察箇所の上部に
矩形状のデポジション膜を形成する第2の工程と、 前記FIB装置を用いて、前記第2の工程によりデポジ
ション膜が形成された断面観察用試料の一部を薄片化
し、薄片化された断面観察試料を他の試料部分から分離
するための切り込みを形成し、薄片化された断面観察試
料の断面観察箇所を、観察可能な程度にまでさらに薄片
化する第3の工程と、 マイクロマニピュレータに装備されて帯電された静電ピ
ンセットに、前記第3の工程で薄片化された断面観察試
料を吸着して、他の試料部分から薄片化された断面観察
試料を分離する第4の工程と、 前記第4の工程で前記静電ピンセットに吸着された断面
観察試料を支持部材の支持膜に貼り付ける第5の工程と
を有することを特徴とするTEM試料作製方法。
1. A TEM (transmission electron microscope) or S using a milling method or FIB (focused ion beam).
A first step of producing a plane observation sample to be observed with a TEM (scanning transmission electron microscope), and a TEM of the plane observation sample produced by the first step.
After observing with, the desired cross-section observation point is searched for from the flat-plane observation sample after the observation, and a rectangular deposition film is formed on the searched cross-section observation point using the deposition function provided in the FIB device. Second step and using the FIB apparatus, a part of the cross-section observation sample on which the deposition film is formed by the second step is thinned, and the thinned cross-section observation sample is separated from other sample parts. Cross-section observation in which a cut for separation is formed, and the thinned cross-section observation point of the sample is further thinned to an observable third step, and electrostatic tweezers equipped with a micromanipulator and charged And a fourth step of adsorbing the cross-section observation sample thinned in the third step to separate the cross-section observation sample thinned from other sample portions, and the static step in the fourth step. TEM sample preparation method characterized by having a fifth step of attaching the cross-section observation sample adsorbed to the forceps supporting film of the support member.
【請求項2】 ミリング法もしくはFIB(集束イオン
ビーム)を用いて、TEM(透過型電子顕微鏡)又はS
TEM(走査型透過電子顕微鏡)により観察する断面観
察用試料を作製する第1の工程と、 前記第1の工程により作製した断面観察用試料をTEM
により観察した後、観察後の断面観察試料から所望の平
面又は異方向断面観察箇所を探し出し、FIB装置に備
えられたデポジション機能を用いて、探し出した平面又
は異方向断面観察箇所の上部に矩形状のデポジション膜
を形成する第2の工程と、 前記FIB装置を用いて、前記第2の工程によりデポジ
ション膜が形成された平面又は異方向断面観察用試料の
一部を薄片化し、薄片化された平面又は異方向断面観察
試料を他の試料部分から分離するための切り込みを形成
し、薄片化された平面又は異方向断面観察試料の平面又
は異方向断面観察箇所を、観察可能な程度にまでさらに
薄片化する第3の工程と、 マイクロマニピュレータに装備されて帯電された静電ピ
ンセットに、前記第3の工程で薄片化された平面又は異
方向断面観察試料を吸着して、他の試料部分から薄片化
された平面又は異方向断面観察試料を分離する第4の工
程と、 前記第4の工程で前記静電ピンセットに吸着された平面
又は異方向断面観察試料を支持部材の支持膜に貼り付け
る第5の工程とを有することを特徴とするTEM試料作
製方法。
2. A TEM (transmission electron microscope) or S using a milling method or FIB (focused ion beam).
The first step of producing a cross-section observation sample to be observed by a TEM (scanning transmission electron microscope), and the TEM cross-section observation sample produced by the first step.
After observing, the desired plane or different-direction cross-section observation point is searched for from the cross-section observation sample after observation, and the deposition function provided in the FIB device is used to form a rectangle on top of the found plane or different-direction cross-section observation point. A second step of forming a deposition film having a shape; and using the FIB apparatus, thinning a part of the flat surface or different direction cross-section observation sample on which the deposition film is formed by the second step, Sliced flat surface or different-direction cross-section observation Cuts are formed to separate the sample from other sample parts, and the thinned flat surface or different-direction cross-section observation sample flat surface or different-direction cross-section observation point can be observed To the third step, and to the electrostatic tweezers equipped on the micromanipulator and charged, the plane or different-direction cross-section observation sample thinned in the third step. A fourth step of adsorbing and separating the sliced flat surface or different-direction cross-section observation sample from another sample portion; and a flat surface or different-direction cross-section observation sample adsorbed to the electrostatic tweezers in the fourth step. And a fifth step of adhering to the supporting film of the supporting member.
JP2001394138A 2001-12-26 2001-12-26 TEM sample preparation method Withdrawn JP2003194681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001394138A JP2003194681A (en) 2001-12-26 2001-12-26 TEM sample preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001394138A JP2003194681A (en) 2001-12-26 2001-12-26 TEM sample preparation method

Publications (1)

Publication Number Publication Date
JP2003194681A true JP2003194681A (en) 2003-07-09

Family

ID=27600959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001394138A Withdrawn JP2003194681A (en) 2001-12-26 2001-12-26 TEM sample preparation method

Country Status (1)

Country Link
JP (1) JP2003194681A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007163160A (en) * 2005-12-09 2007-06-28 Semiconductor Energy Lab Co Ltd Focused ion beam processing method, and preparation method of transmission electron microscope sample using it
US7525087B2 (en) 2005-12-06 2009-04-28 Oki Semiconductor Co., Ltd. Method for creating observational sample
JP2010133710A (en) * 2008-12-02 2010-06-17 Hitachi High-Technologies Corp Minute specimen sampler
CN102466578A (en) * 2010-11-03 2012-05-23 中芯国际集成电路制造(上海)有限公司 Preparation method of TEM sample
CN103257066A (en) * 2013-05-07 2013-08-21 上海华力微电子有限公司 Preparation method of TEM (Transmission Electron Microscope) sample
JP2013167565A (en) * 2012-02-16 2013-08-29 Nippon Steel & Sumitomo Metal Thin sample preparation device and thin sample preparation method
CN103900868A (en) * 2014-02-21 2014-07-02 上海华力微电子有限公司 Preparation method of plane transmission electron microscope (TEM) sample
JP2014182125A (en) * 2013-03-15 2014-09-29 Fei Co Multiple sample attachment to nano manipulator for high throughput sample preparation
CN104297036A (en) * 2014-10-24 2015-01-21 天津大学 Preparation method of transmission electron microscope metal sample
CN104568530A (en) * 2013-10-18 2015-04-29 中芯国际集成电路制造(上海)有限公司 Method for preparing TEM sample
JP2015092156A (en) * 2013-10-30 2015-05-14 エフ・イ−・アイ・カンパニー Integrated flake extraction station
US9218939B2 (en) 2013-03-25 2015-12-22 Hitachi High-Tech Science Corporation Focused ion beam system, sample processing method using the same, and sample processing program using focused ion beam
CN105842045A (en) * 2016-03-22 2016-08-10 西安交通大学 Method for preparation of large-size transmission sample with focused ion beam
CN109142408A (en) * 2018-08-06 2019-01-04 华东师范大学 A kind of method of the TEM sample of dry process two-dimensional material
CN109254025A (en) * 2018-11-02 2019-01-22 内蒙古工业大学 A kind of device and method for pasting annular support grid for transmission electron microscope sample
JPWO2022162863A1 (en) * 2021-01-29 2022-08-04
KR102867124B1 (en) 2021-01-29 2025-10-14 주식회사 히타치하이테크 Lamella mounting method and analysis system

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525087B2 (en) 2005-12-06 2009-04-28 Oki Semiconductor Co., Ltd. Method for creating observational sample
JP2007163160A (en) * 2005-12-09 2007-06-28 Semiconductor Energy Lab Co Ltd Focused ion beam processing method, and preparation method of transmission electron microscope sample using it
JP2010133710A (en) * 2008-12-02 2010-06-17 Hitachi High-Technologies Corp Minute specimen sampler
CN102466578A (en) * 2010-11-03 2012-05-23 中芯国际集成电路制造(上海)有限公司 Preparation method of TEM sample
JP2013167565A (en) * 2012-02-16 2013-08-29 Nippon Steel & Sumitomo Metal Thin sample preparation device and thin sample preparation method
JP2014182125A (en) * 2013-03-15 2014-09-29 Fei Co Multiple sample attachment to nano manipulator for high throughput sample preparation
US9218939B2 (en) 2013-03-25 2015-12-22 Hitachi High-Tech Science Corporation Focused ion beam system, sample processing method using the same, and sample processing program using focused ion beam
CN103257066A (en) * 2013-05-07 2013-08-21 上海华力微电子有限公司 Preparation method of TEM (Transmission Electron Microscope) sample
CN103257066B (en) * 2013-05-07 2015-05-20 上海华力微电子有限公司 Preparation method of TEM (Transmission Electron Microscope) sample
CN104568530A (en) * 2013-10-18 2015-04-29 中芯国际集成电路制造(上海)有限公司 Method for preparing TEM sample
JP2015092156A (en) * 2013-10-30 2015-05-14 エフ・イ−・アイ・カンパニー Integrated flake extraction station
CN103900868A (en) * 2014-02-21 2014-07-02 上海华力微电子有限公司 Preparation method of plane transmission electron microscope (TEM) sample
CN104297036A (en) * 2014-10-24 2015-01-21 天津大学 Preparation method of transmission electron microscope metal sample
CN105842045A (en) * 2016-03-22 2016-08-10 西安交通大学 Method for preparation of large-size transmission sample with focused ion beam
CN109142408A (en) * 2018-08-06 2019-01-04 华东师范大学 A kind of method of the TEM sample of dry process two-dimensional material
CN109142408B (en) * 2018-08-06 2021-02-26 华东师范大学 Method for preparing TEM sample of two-dimensional material by dry method
CN109254025A (en) * 2018-11-02 2019-01-22 内蒙古工业大学 A kind of device and method for pasting annular support grid for transmission electron microscope sample
CN109254025B (en) * 2018-11-02 2023-09-22 内蒙古工业大学 Device and method for sticking annular carrier net to transmission electron microscope sample
JPWO2022162863A1 (en) * 2021-01-29 2022-08-04
WO2022162863A1 (en) * 2021-01-29 2022-08-04 株式会社日立ハイテク Lamella mounting method, and analysis system
JP7526824B2 (en) 2021-01-29 2024-08-01 株式会社日立ハイテク Lamella mounting method and analysis system
KR102867124B1 (en) 2021-01-29 2025-10-14 주식회사 히타치하이테크 Lamella mounting method and analysis system

Similar Documents

Publication Publication Date Title
US6841788B1 (en) Transmission electron microscope sample preparation
US6188068B1 (en) Methods of examining a specimen and of preparing a specimen for transmission microscopic examination
JP2003194681A (en) TEM sample preparation method
US8389955B2 (en) Method for thinning a sample and sample carrier for performing said method
JP4185604B2 (en) Sample analysis method, sample preparation method and apparatus therefor
TWI687671B (en) Method for preparing a sample for microstructure diagnostics, and sample for microstructure diagnostics
JPH0552721A (en) Method for separating sample and method for analyzing separated sample obtained by this method
JP2007506078A (en) Method for preparing a sample for electron microscopy, sample support and transport holder used therefor
CN1834608B (en) Sample support prepared by semiconductor silicon process technique
JP3711018B2 (en) TEM sample thinning method
JP2004087174A (en) Ion beam device, and working method of the same
JP2014182125A (en) Multiple sample attachment to nano manipulator for high throughput sample preparation
JP2009216478A (en) Method of manufacturing thin-film sample for observing transmission electron microscope
EP2743026B1 (en) Method of processing a material-specimen
JP2009216534A (en) Thin-film sample preparation method
JP2006017729A (en) Method for taking out microscopic sample from substrate
Palisaitis Use of cleaved wedge geometry for plan‐view transmission electron microscopy sample preparation
US8288740B2 (en) Method for preparing specimens for atom probe analysis and specimen assemblies made thereby
US7394075B1 (en) Preparation of integrated circuit device samples for observation and analysis
CN114252309A (en) Method and device for preparing transmission electron microscope samples
McKenzie et al. Focused ion beam sample preparation for atom probe tomography
US6927174B2 (en) Site-specific method for large area uniform thickness plan view transmission electron microscopy sample preparation
Tkadletz et al. Fs-laser preparation of half grid specimens for atom probe tomography and transmission electron microscopy
CN214844914U (en) A sample grid for transmission electron microscopy
JP2000230891A (en) Method for preparing sample for transmission electron microscope

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20050301