JP2003139653A - Method and apparatus for measurement of characteristic of light modulator - Google Patents
Method and apparatus for measurement of characteristic of light modulatorInfo
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- JP2003139653A JP2003139653A JP2001337450A JP2001337450A JP2003139653A JP 2003139653 A JP2003139653 A JP 2003139653A JP 2001337450 A JP2001337450 A JP 2001337450A JP 2001337450 A JP2001337450 A JP 2001337450A JP 2003139653 A JP2003139653 A JP 2003139653A
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- light
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000005259 measurement Methods 0.000 title description 18
- 230000003595 spectral effect Effects 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims description 128
- 238000001228 spectrum Methods 0.000 claims description 21
- 238000000691 measurement method Methods 0.000 claims 2
- 238000004891 communication Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 241000981595 Zoysia japonica Species 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
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Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、光通信や光計測に
用いられるマッハ・ツェンダー干渉型光変調器(以下、
MZ型光変調器をいう)のような、入射光を2つ以上に
分岐し、分岐された光の少なくとも一方に電気信号を印
加することにより位相変調を行い、その後、該分岐され
た光を合成することにより強度変調された光信号を発生
する光変調器の特性を測定する方法及び装置に関し、特
に、高周波変調時における該光変調器の半波長電圧値や
チャープパラメータ値などの特性を測定する方法及び装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Mach-Zehnder interferometer type optical modulator (hereinafter referred to as an optical modulator) used for optical communication and optical measurement.
(For example, MZ type optical modulator), the incident light is branched into two or more, and an electric signal is applied to at least one of the branched lights to perform phase modulation, and then the branched light is The present invention relates to a method and apparatus for measuring characteristics of an optical modulator that generates an intensity-modulated optical signal by combining, and particularly measures characteristics such as half-wave voltage value and chirp parameter value of the optical modulator during high frequency modulation. Method and device.
【0002】[0002]
【従来の技術】近年の音声、データ等の通信需要の増大
により、大容量データを高速に通信することを可能とす
る光通信システムへの要請が高くなっている。このよう
な大容量・高速な通信システムには、データ生成のため
の高速変調動作が可能なMZ型光変調器が用いられてい
る。2. Description of the Related Art Due to the recent increase in communication demand for voice, data, etc., there is an increasing demand for an optical communication system capable of high-speed communication of a large amount of data. In such a large capacity and high speed communication system, an MZ type optical modulator capable of high speed modulation operation for data generation is used.
【0003】MZ型光変調器の基本的な動作を説明す
る。MZ型光変調器は、図1に示すように、LiNbO
3などのような電気光学効果を有する基板10上に、光
波を導波するための光導波路20と、前記光波にマイク
ロ波帯域の高速変調信号を印加するための電極(不図
示)などによって構成される。MZ型光変調器の動作原
理は、光導波路20の一端から入力された光が、途中で
分岐されると共に信号源30から印加された電気信号の
電圧の大きさに依存して屈折率が変化した基板中を通過
するため相互の光に速度差を生じ、分岐した光が合流し
た際には、相互に位相のずれが発生し、合成された光出
力は、該電気信号に応じた強度変化を示す。The basic operation of the MZ type optical modulator will be described. As shown in FIG. 1, the MZ type optical modulator includes LiNbO.
On the substrate 10 having an electro-optical effect such as 3, an optical waveguide 20 for guiding a light wave, an electrode (not shown) for applying a high speed modulation signal in the microwave band to the light wave, and the like are configured. To be done. The operation principle of the MZ type optical modulator is that the light input from one end of the optical waveguide 20 is branched on the way and the refractive index changes depending on the magnitude of the voltage of the electric signal applied from the signal source 30. As a result of passing through the substrate, a difference in speed occurs between the light beams, and when the branched light beams merge, a phase shift occurs between them, and the combined optical output changes in intensity according to the electrical signal. Indicates.
【0004】図2は、MZ型光変調器に印加される信号
源30の入力電圧に対する光出力強度の変化を示すグラ
フである。図2中のa点は、MZ型光変調器を通過する
光が最大限となる「On動作」状態であり、b点は通過
光が最小限となる「Off動作」状態を示し、「On動
作」と「Off動作」との間のスイッチング動作に要す
る電圧(a点とb点との間の入力電圧値の大きさ)を半
波長電圧(Vπ)と呼び、光変調器の特性を評価する重
要なパラメータの1つである。FIG. 2 is a graph showing changes in the optical output intensity with respect to the input voltage of the signal source 30 applied to the MZ type optical modulator. The point a in FIG. 2 is the “On operation” state in which the light passing through the MZ optical modulator is maximized, and the point b is the “Off operation” state in which the light passing through is minimized. The voltage required for the switching operation between "operation" and "Off operation" (the magnitude of the input voltage value between points a and b) is called a half-wave voltage (V π ), and the characteristics of the optical modulator are It is one of the important parameters to evaluate.
【0005】半波長電圧を測定する方法としては、図3
のように「電気入力波形」として示した波形の電圧を、
図1の信号源30よりMZ型光変調器に印加し、MZ型
光変調器からの出力光の光強度波形を、サンプリングオ
シロスコープなどで直接観察する。サンプリングオシロ
スコープで観察される出力光の光強度波形は、図3の
「光変調器出力の観察波形」として示されている。そし
て、図3のような観察波形の振幅値が最大となる状態に
おける、光変調器への印加電圧、つまり、図3の「電気
入力波形」の入力振幅値を測定することにより、MZ型
光変調器の半波長電圧を測定していた。A method for measuring the half-wave voltage is shown in FIG.
, The voltage of the waveform shown as "electrical input waveform",
It is applied to the MZ type optical modulator from the signal source 30 of FIG. 1, and the light intensity waveform of the output light from the MZ type optical modulator is directly observed by a sampling oscilloscope or the like. The light intensity waveform of the output light observed by the sampling oscilloscope is shown as "observation waveform of the optical modulator output" in FIG. Then, the voltage applied to the optical modulator, that is, the input amplitude value of the “electrical input waveform” in FIG. 3 is measured in the state where the amplitude value of the observed waveform is maximum as shown in FIG. The half-wave voltage of the modulator was measured.
【0006】[0006]
【発明が解決しようとする課題】半波長電圧値などの光
変調器の特性は、同じ光変調器であっても光変調器に印
加される電気信号の周波数に応じて変化する。しかも、
近年の光通信の高速・大容量化に伴い、光変調器の駆動
周波数も高周波化し、10GHzやそれ以上の周波数に
おいても正確な半波長電圧値などの特性を測定すること
が要求されている。しかしながら、サンプリングオシロ
スコープなどのような波形を直接観察する測定器具を用
いた場合、印加電圧の周波数が高くなると、受光系の周
波数特性の問題により正確な波形を観察するのが困難と
なる。しかも、光変調器を駆動する信号発生器やアンプ
の出力不足、高調波による波形の歪みなどの影響によ
り、正確な半波長電圧値などの光変調器の特性を測定す
ることが、一層困難になっていた。The characteristics of the optical modulator, such as the half-wavelength voltage value, change depending on the frequency of the electric signal applied to the optical modulator even if the optical modulator is the same. Moreover,
With the increase in speed and capacity of optical communication in recent years, the driving frequency of the optical modulator has been increased, and it has been required to measure characteristics such as an accurate half-wave voltage value even at a frequency of 10 GHz or higher. However, when a measuring instrument such as a sampling oscilloscope that directly observes the waveform is used, if the frequency of the applied voltage becomes high, it becomes difficult to observe the accurate waveform due to the frequency characteristic problem of the light receiving system. Moreover, it is more difficult to accurately measure the characteristics of the optical modulator such as the half-wave voltage value due to the effects of insufficient output of the signal generator and amplifier that drive the optical modulator, and distortion of the waveform due to harmonics. Was becoming.
【0007】本発明の課題は、上記の問題を解決し、高
周波変調時における光変調器の半波長電圧値やチャープ
パラメータ値などの特性を、正確に測定するための方法
及び装置を提供することである。An object of the present invention is to solve the above problems and provide a method and apparatus for accurately measuring characteristics such as half-wavelength voltage value and chirp parameter value of an optical modulator during high frequency modulation. Is.
【0008】[0008]
【課題を解決するための手段】上記課題を解決するため
に、請求項1に係る光変調器の特性測定方法では、入射
光を2つ以上に分岐し、分岐した光の少なくとも一方に
電気信号を印加することにより位相変調を行い、その
後、該分岐した光を合成することにより強度変調された
光信号を発生する光変調器に対し、該光信号のスペクト
ル分布を測定し、該測定されたスペクトル分布に係る測
定値から該光変調器の強度変調に係る特性値を算出する
ことを特徴とする。In order to solve the above problems, in the characteristic measuring method for an optical modulator according to claim 1, the incident light is branched into two or more, and an electric signal is output to at least one of the branched lights. Is applied to perform phase modulation, and then the spectral distribution of the optical signal is measured with respect to an optical modulator that generates an intensity-modulated optical signal by combining the branched lights. A characteristic value relating to intensity modulation of the optical modulator is calculated from a measured value relating to a spectral distribution.
【0009】請求項2に係る光変調器の特性測定方法で
は、請求項1に記載の光変調器の特性測定方法におい
て、該電気信号がバイアス電圧と変調信号とからなり、
該測定値は、該バイアス電圧の可変調整により、入射光
と同じスペクトル成分における出射光の光強度が最大と
なる場合の該スペクトル成分の出射光の光強度値
P0b、入射光と同じスペクトル成分における出射光の
光強度が最小となる場合の変調周波数に係る成分の出射
光の光強度値P1c、及び該変調信号を印加しない場合
の出射光の光強度値P0aであり、該光変調器の強度変
調に係る特性値の算出に際し、該光強度値P0aにより
該光強度値P0bと該光強度値P1cとを規格化した値
を用いることを特徴とする。The optical modulator characteristic measuring method according to a second aspect is the optical modulator characteristic measuring method according to the first aspect, wherein the electric signal comprises a bias voltage and a modulation signal.
The measured value is the light intensity value P 0b of the emitted light of the spectrum component when the light intensity of the emitted light in the same spectrum component as the incident light is maximum due to the variable adjustment of the bias voltage, and the same spectrum component as the incident light. Is the light intensity value P 1c of the emitted light of the component related to the modulation frequency when the light intensity of the emitted light is minimum, and the light intensity value P 0a of the emitted light when the modulation signal is not applied. When calculating the characteristic value related to the intensity modulation of the container, a value obtained by normalizing the light intensity value P 0b and the light intensity value P 1c by the light intensity value P 0a is used.
【0010】請求項3に係る光変調器の特性測定方法で
は、請求項1又は2に記載の光変調器の特性測定方法に
おいて、該光変調器の強度変調に係る特性値は、該光変
調器の半波長電圧値であることを特徴とする。According to a third aspect of the present invention, there is provided an optical modulator characteristic measuring method according to the first or second aspect, wherein the characteristic value relating to the intensity modulation of the optical modulator is the optical modulation characteristic. It is characterized by a half-wave voltage value of the container.
【0011】請求項4に係る光変調器の特性測定方法で
は、請求項1又は2に記載の光変調器の特性測定方法に
おいて、該光変調器の強度変調に係る特性値は、該光変
調器のチャープパラメータ値であることを特徴とする。According to a fourth aspect of the present invention, there is provided an optical modulator characteristic measuring method according to the first or second aspect, wherein the characteristic value relating to intensity modulation of the optical modulator is the optical modulation characteristic. It is the chirp parameter value of the vessel.
【0012】請求項5に係る光変調器の特性測定装置で
は、請求項1乃至4のいずれかに記載の光変調器の特性
測定方法を用いたことを特徴とする。An optical modulator characteristic measuring device according to a fifth aspect is characterized by using the optical modulator characteristic measuring method according to any one of the first to fourth aspects.
【0013】[0013]
【発明の実施の形態】以下、本発明を好適例を用いて詳
細に説明するが、本発明の範囲は、当該好適例に限定さ
れるものではない。本発明の測定の原理について説明す
る。図4は、本発明に用いられる測定系の概略図であ
る。レーザから出た光波は、偏波コントローラにより光
変調器による変調に適した偏波に調整され、測定対象の
光変調器に入射される。この光変調器には、DC電源に
よるバイアス電圧と発振器による電気信号とが重畳され
て印加される。光変調器は、この重畳された印加電圧に
対応して入射光を変調する。光変調器によって変調され
た出射光は、光スペクトラムアナライザに入射され、出
射光の周波数成分に応じた光強度分布が測定される。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below with reference to preferred examples, but the scope of the present invention is not limited to the preferred examples. The principle of measurement of the present invention will be described. FIG. 4 is a schematic diagram of a measurement system used in the present invention. The light wave emitted from the laser is adjusted to a polarization suitable for modulation by the optical modulator by the polarization controller, and is incident on the optical modulator to be measured. A bias voltage from a DC power supply and an electric signal from an oscillator are superimposed and applied to this optical modulator. The optical modulator modulates the incident light in accordance with the superimposed applied voltage. The outgoing light modulated by the optical modulator enters the optical spectrum analyzer, and the light intensity distribution according to the frequency component of the outgoing light is measured.
【0014】この測定対象となるMZ型光変調器の光導
波路の構成を、図5に示す。入射光は導波路1に導入さ
れると、Y分岐1において2つに分岐され、分岐された
光は各々の導波路2,3を伝搬し、Y分岐2により合波
され、最後に導波路4を経て出射される。The structure of the optical waveguide of the MZ type optical modulator to be measured is shown in FIG. When the incident light is introduced into the waveguide 1, the Y-branch 1 splits the light into two, and the branched light propagates through the respective waveguides 2 and 3 and is combined by the Y-branch 2 and finally the waveguide. It is emitted via 4.
【0015】今、入射光として電界Eiexp(jω0
t)を有する光を入射させた場合を考える。MZ型光変
調器において変調をかけていない場合には、出射光は入
射光と同じと仮定できるため、出射光の光強度値P0a
は、次の式1で表せる。Now, the electric field E i exp (jω 0
Consider a case in which light having t) is incident. When the MZ type optical modulator is not modulated, it can be assumed that the emitted light is the same as the incident light. Therefore, the light intensity value P 0a of the emitted light is
Can be expressed by the following equation 1.
【式1】 [Formula 1]
【0016】次に、導波路2,3で変調を行った場合を
考える。変調をかけていない場合と同様に、電界Eie
xp(jω0t)を有する光を入射させ、導波路2,3
で変調を加え、更にY分岐2で合波した光の電界成分E
(t)は、次の式2で表せる。Next, consider the case where modulation is performed in the waveguides 2 and 3. As in the unmodulated case, the electric field E i e
The light having the wavelength xp (jω 0 t) is made incident, and the waveguides 2, 3
Modulated by, and further combined by Y branch 2 electric field component E of the light
(T) can be expressed by the following Expression 2.
【式2】 [Formula 2]
【0017】ここで、A1,A2は、変調の深さを表す
パラメータ(変調指数)、ωmは変調信号の角周波数、
φ1,φ2は各導波路により異なる変調信号の位相、φ
B1,φB2は導波路の初期状態による位相を表す。式
2は、合波した光波が様々な周波数成分を有すること示
している。ここでは、このような周波数成分の内、入射
光と同じ周波数成分(式2中でn=0の場合)と、+1
次の高次項(式2中でn=1の場合)に着目する。入射
光と同じ周波数成分(ω0)と+1次の高次項(ω0+
ωm)の光強度を測定する。図6に光スペクトラムアナ
ライザの測定波形を示す。これらの各成分の光強度は、
次の式3(入射光と同じ周波数成分の光強度P0)及び
式4(+1次の高次項の光強度P1)で表せる。Here, A 1 and A 2 are parameters (modulation index) representing the depth of modulation, ω m is the angular frequency of the modulation signal,
φ 1 and φ 2 are the phase of the modulation signal which is different depending on each waveguide, φ
B1 and φ B2 represent the phase depending on the initial state of the waveguide. Equation 2 shows that the combined light waves have various frequency components. Here, among such frequency components, the same frequency component as the incident light (when n = 0 in Equation 2), +1
Attention is paid to the next higher-order term (when n = 1 in Expression 2). The same frequency component (ω 0 ) as the incident light and the + 1st-order higher-order term (ω 0 +
The light intensity of ω m ) is measured. Fig. 6 shows the measured waveform of the optical spectrum analyzer. The light intensity of each of these components is
It can be expressed by the following equation 3 (light intensity P 0 of the same frequency component as the incident light) and equation 4 (light intensity P 1 of the + 1st- order higher order term).
【式3】 [Formula 3]
【式4】 [Formula 4]
【0018】また、DC電源により光変調器に印加する
バイアス電圧を調整し、入射光と同じ周波数成分
(ω0)の出射光の光強度が最大となるように設定した
時(図2のa点にバイアス電圧が設定された状態)、入
射光と同じ周波数成分(ω0)の出射光の光強度値P
0bは、上記式3により、次の式5で表せる。Further, when the bias voltage applied to the optical modulator is adjusted by the DC power source so that the light intensity of the emitted light having the same frequency component (ω 0 ) as the incident light is set to the maximum (a in FIG. 2). (A bias voltage is set at the point), and the light intensity value P of the emitted light having the same frequency component (ω 0 ) as the incident light
0b can be expressed by the following expression 5 by the above expression 3.
【式5】 [Formula 5]
【0019】また、バイアス電圧を調整し、入射光と同
じ周波数成分(ω0)の出射光の光強度が最小となるよ
うに設定した時(図2のb点にバイアス電圧が設定され
た状態)、+1次の高次項(ω0+ωm。変調周波数に
係る成分)の出射光の光強度値P1cは、上記式4よ
り、次の式6で表せる。Further, when the bias voltage is adjusted so that the light intensity of the emitted light having the same frequency component (ω 0 ) as the incident light is minimized (the state where the bias voltage is set at point b in FIG. 2). ), The light intensity value P 1c of the emitted light of the + 1st-order high-order term (ω 0 + ω m, which is a component related to the modulation frequency) can be expressed by the following Expression 6 from Expression 4 above.
【式6】 [Formula 6]
【0020】ここで、変調をかけていない出射光の光強
度値P0aで、上述したP0b,P 1cを規格化する
と、次の式7及び8が得られる。Here, the light intensity of the outgoing light that has not been modulated
Degree value P0aThen, P mentioned above0b, P 1cStandardize
Then, the following equations 7 and 8 are obtained.
【式7】 [Formula 7]
【式8】 [Formula 8]
【0021】式7及び式8を用いて、変調の深さを表す
パラメータA1,A2を算出する。なお、式7及び式8
は超越方程式になるが、A1,A2が小さい値を占める
ことから解の特定が可能となる。そして、A1,A2を
算出した後、光変調器の半波長電圧Vπは、次の式9に
より算出することが可能である。ただし、Vmは変調信
号として印加した発振器からの電圧振幅を示す。The parameters A 1 and A 2 representing the modulation depth are calculated using the equations 7 and 8. Note that Equation 7 and Equation 8
Becomes a transcendental equation, but since A 1 and A 2 occupy small values, the solution can be specified. Then, after calculating A 1 and A 2 , the half-wave voltage V π of the optical modulator can be calculated by the following Expression 9. However, V m represents the voltage amplitude from the oscillator is applied as a modulation signal.
【式9】 [Formula 9]
【0022】上述したように、本発明の光変調器の特性
測定方法によれば、光スペクトラムアナライザを用いて
得られる光変調器の出射光のスペクトル分布から、上記
の光強度値P0a、P0b、P1cを測定し、該光強度
値に基づき光変調器の半波長電圧値が算出される。この
ため、従来のように出射光の光強度の波形を直接観察す
る必要が無く、高周波においても光変調器の特性を測定
することが可能となる。また、光変調器の半波長電圧を
測定する際に、従来は光変調器に印加する変調信号の電
圧振幅は半波長電圧値以上の範囲まで可変調整されてい
たが、式9により任意の値である変調信号の電圧振幅値
Vmを用いて半波長電圧を算出することが可能となるた
め、従来のような半波長電圧値まで変調信号を調整する
必要がなく、しかも、変調信号の電圧振幅値を可変する
ことも不要となる。さらに、光スペクトラムアナライザ
により高次の1次項のみを測定するため、アンプなどの
高周波成分による測定への影響を受けないため、より正
確な半波長電圧の測定が可能となる。As described above, according to the characteristic measuring method of the optical modulator of the present invention, the above-mentioned light intensity values P 0a , P are obtained from the spectral distribution of the light emitted from the optical modulator obtained by using the optical spectrum analyzer. 0b and P 1c are measured, and the half wavelength voltage value of the optical modulator is calculated based on the light intensity value. Therefore, it is not necessary to directly observe the waveform of the light intensity of the emitted light as in the conventional case, and the characteristics of the optical modulator can be measured even at high frequencies. Further, when measuring the half-wave voltage of the optical modulator, conventionally, the voltage amplitude of the modulation signal applied to the optical modulator was variably adjusted to a range equal to or more than the half-wave voltage value. Since it is possible to calculate the half-wave voltage using the voltage amplitude value Vm of the modulation signal, it is not necessary to adjust the modulation signal to the half-wave voltage value as in the conventional case, and the voltage amplitude of the modulation signal is It is not necessary to change the value. Further, since only the high-order first-order term is measured by the optical spectrum analyzer, the measurement is not affected by high-frequency components such as an amplifier, so that the half-wave voltage can be measured more accurately.
【0023】MZ型光変調器では、図5に示す導波路2
及び3に印加する変調電圧の違いによる変調の差異によ
り、合波時には光の強度だけでなく位相も変調される。
この現象をチャーピングと呼び、チャーピングの大きさ
は、次の式10に表すαパラメータにより与えられる。In the MZ type optical modulator, the waveguide 2 shown in FIG.
Due to the difference in modulation due to the difference in the modulation voltage applied to 3 and 3, not only the intensity of light but also the phase is modulated at the time of multiplexing.
This phenomenon is called chirping, and the magnitude of chirping is given by the α parameter expressed by the following Expression 10.
【式10】 [Formula 10]
【0024】式10の中で、dIは光の強度変化量、d
φは光の位相変化量を表し、また、A1,A2は、上述
したように出射光のスペクトル分布より測定された特定
の光強度値により算出されているため、αパラメータは
算出可能である。In equation 10, dI is the amount of change in light intensity, and dI
Since φ represents the amount of phase change of light, and A1 and A2 are calculated by the specific light intensity values measured from the spectral distribution of the emitted light as described above, the α parameter can be calculated.
【0025】本発明は、上述した光変調器の特性測定方
法に限るものではなく、例えば、上記特性測定方法で用
いた、+1次の高次項(周波数ω0+ωmのスペクトル
成分)を、−1次の高次項(周波数ω0−ωmのスペク
トル成分)に置き換えて用い、同様な効果を得ることが
できるものなども包含する。The present invention is not limited to the above-mentioned characteristic measuring method of the optical modulator. For example, the + 1st-order higher-order term (spectral component of frequency ω 0 + ω m ) used in the characteristic measuring method is Also included are those that can be used in place of the first-order higher-order terms (spectral components of the frequency ω 0 −ω m ) to obtain similar effects.
【0026】次に、本発明の光変調器の特性測定方法を
用いた測定装置について説明する。図7は、本発明の光
変調器の特性を自動的に測定するための装置のブロック
図である。周波数ω0を有するレーザ光は、偏波コント
ローラを通過して一定方向に偏波され、MZ型光変調器
に入射する。光変調器には、DC電源及び周波数ωmの
発振器とで形成される、特定のバイアス電圧を中心に周
波数ωmで振動する変調信号が印加される。Next, a measuring device using the characteristic measuring method of the optical modulator of the present invention will be described. FIG. 7 is a block diagram of an apparatus for automatically measuring the characteristics of the optical modulator of the present invention. The laser light having the frequency ω 0 passes through the polarization controller, is polarized in a certain direction, and enters the MZ type optical modulator. The optical modulator is formed by an oscillator of DC power and the frequency omega m, the modulation signal oscillating at the frequency omega m is applied around the specific bias voltage.
【0027】変調信号は光変調器に入力されると同時
に、分岐回路を経てRFパワーメータにより変調信号の
電圧振幅値Vm、バイアス電圧値などが検出・監視され
る。RFパワーメータにより測定された数値は、制御用
コンピュータに入力され、後述する光変調器の特性測定
を自動化するための検出信号の一つとして利用される。The modulated signal is input to the optical modulator, and at the same time, the voltage amplitude value Vm, the bias voltage value, etc. of the modulated signal are detected and monitored by the RF power meter through the branch circuit. The numerical value measured by the RF power meter is input to the control computer and used as one of the detection signals for automating the characteristic measurement of the optical modulator described later.
【0028】光変調器に印加された変調信号に対応し
て、入射光は変調され、光変調器から出射光として出射
される。出射光は、光スペクトラムアナライザにより周
波数に対する光強度分布であるスペクトル分布が測定さ
れる。光スペクトラムアナライザの測定値、特に、レー
ザ光の周波数ω0、+1次の高次項(周波数ω0+
ωm。または、−1次高次項であってもよい。)に係る
光強度の測定値が、制御用コンピュータに入力される。The incident light is modulated in accordance with the modulation signal applied to the optical modulator and is emitted from the optical modulator as outgoing light. A spectrum distribution, which is a light intensity distribution with respect to frequency, of the emitted light is measured by an optical spectrum analyzer. The measurement value of the optical spectrum analyzer, especially the frequency ω 0 of the laser light, the + 1st-order high-order term (frequency ω 0 +
ω m . Alternatively, it may be a -1st-order high-order term. ), The measured value of the light intensity is input to the control computer.
【0029】光変調器の特性測定を自動的に測定するプ
ロセスについて説明する。レーザ、偏波コントローラ、
光スペクトラムアナライザなど測定に必要な各種機材を
動作させた状態において、まず、制御用コンピュータか
らの指示により、DC電源及び発振器による光変調器へ
の変調信号の印加を停止させ、無変調状態における周波
数ω0における光強度P0aを測定し、制御用コンピュ
ータに該測定値を取り込む。次に、制御用コンピュータ
からの指示により、光変調器に変調信号を印加させ、光
スペクトラムアナライザからの周波数ω0における光強
度を測定し、制御用コンピュータに入力する。制御用コ
ンピュータでは、周波数ω0における光強度のモニタに
合わせて、変調信号のバイアス電圧を規定するDC電源
の出力電圧を変化させ、該変化に応じてモニタする該光
強度が最大となる光強度P0bを決定する。また、制御
用コンピュータでは、周波数ω0における光強度のモニ
タに合わせて、変調信号のバイアス電圧を規定するDC
電源の出力電圧を変化させ、該変化に応じてモニタする
該光強度が最小となる状態を決定し、該状態時の+1次
の高次項(周波数ω0+ωm)の光強度P1cを光スペ
クトラムアナライザにより測定し、その測定値を取り込
む。The process of automatically measuring the characteristic measurement of the optical modulator will be described. Laser, polarization controller,
In a state in which various equipment required for measurement such as an optical spectrum analyzer is operating, first, according to an instruction from the control computer, the application of the modulation signal to the optical modulator by the DC power source and the oscillator is stopped, and the frequency in the non-modulation state is stopped. The light intensity P 0a at ω 0 is measured, and the measured value is loaded into the control computer. Next, according to an instruction from the control computer, a modulation signal is applied to the optical modulator, the light intensity at the frequency ω 0 from the optical spectrum analyzer is measured, and the result is input to the control computer. In the control computer, the output voltage of the DC power supply that regulates the bias voltage of the modulation signal is changed in accordance with the monitoring of the light intensity at the frequency ω 0, and the light intensity monitored in accordance with the change is the maximum light intensity. Determine P 0b . Further, in the control computer, the DC voltage that regulates the bias voltage of the modulation signal is adjusted in accordance with the monitoring of the light intensity at the frequency ω 0 .
The output voltage of the power supply is changed, and the state in which the light intensity to be monitored is minimized is determined in accordance with the change, and the light intensity P 1c of the + 1st-order higher-order term (frequency ω 0 + ω m ) in that state is detected. Measure with a spectrum analyzer and capture the measured values.
【0030】次に、制御用コンピュータに取り込まれ
た、各光強度値P0a、P0b、P1 cに基づき、上記
式7,8の方程式を解くことにより、A1,A2を決定
し、さらに上記式9,10を用いて、半波長電圧Vπ、
チャープパラメータ(αパラメータ)を演算し、決定す
る。なお、周波数ω0や、周波数ωm及び電圧振幅値V
mなどの各値については、光変調器の特性測定に際し使
用するレーザや発振器などにより、予め設定されている
値を制御用コンピュータに入力して用いても良いし、光
スペクトラムアナライザやRFパワーメータにより測定
された値を用いても良い。また、上述した測定装置で
は、制御用コンピュータ上で、測定値の取り込みや各種
演算も実行しているが、これらの情報処理については、
制御用コンピュータとは別に設けられた記憶装置や演算
装置を用いて実行しても良い。Next, based on the respective light intensity values P 0a , P 0b and P 1 c loaded into the control computer, A1 and A2 are determined by solving the above equations 7 and 8, and further, Using Equations 9 and 10 above, the half-wave voltage Vπ,
The chirp parameter (α parameter) is calculated and determined. The frequency ω 0 , the frequency ω m, and the voltage amplitude value V
For each value such as m, a preset value may be input to the control computer depending on the laser or oscillator used when measuring the characteristics of the optical modulator, or an optical spectrum analyzer or RF power meter may be used. You may use the value measured by. Further, in the above-described measuring device, the control computer also executes the acquisition of measured values and various calculations.
It may be executed by using a storage device or an arithmetic device provided separately from the control computer.
【0031】図4の測定装置を用いて測定した結果を、
図8,9に示す。図8は、測定周波数10GHzの変調
信号を印加した場合の光変調器の特性測定結果である。
ここでは、変調信号の電圧振幅値Vmを2〜9Vの範囲
で可変して、各電圧振幅値Vmにおける半波長電圧値及
びチャープパラメータを算出した。図8を見ると、半波
長電圧値及びチャープパラメータは、共に、電圧振幅に
よらずほぼ一定の値を示しており、本発明の測定方法及
び装置が、光変調器の特性を適正に測定していることが
理解できる。なお、チャープパラメータについては、変
調信号の電圧振幅値が半波長電圧値より大きい場合や、
変調信号の電圧振幅値が小さい場合は、光変調器に係る
特性の測定結果が若干変動している。これは、変調信号
の電圧振幅値を、半波長電圧以上のように大きくする
と、変調信号の波形に歪が発生し、光変調器からの出射
光の光強度が、理論値から外れたりノイズを多く含むこ
ととなり、正確な測定が困難となるためと考えられる。
また、変調信号の電圧振幅値が小さ過ぎると、+1次の
高次項など、変調を反映した光スペクトル分布が明確に
形成されず、ノイズの影響を強く受けて正確な測定が困
難となることが考えられる。The result of measurement using the measuring device of FIG.
This is shown in FIGS. FIG. 8 is a characteristic measurement result of the optical modulator when a modulation signal having a measurement frequency of 10 GHz is applied.
Here, the voltage amplitude value Vm of the modulation signal was varied in the range of 2 to 9 V, and the half-wavelength voltage value and the chirp parameter at each voltage amplitude value Vm were calculated. As shown in FIG. 8, both the half-wave voltage value and the chirp parameter show almost constant values regardless of the voltage amplitude, and the measuring method and apparatus of the present invention properly measure the characteristics of the optical modulator. Can understand. Regarding the chirp parameter, when the voltage amplitude value of the modulation signal is larger than the half-wave voltage value,
When the voltage amplitude value of the modulation signal is small, the measurement result of the characteristics of the optical modulator fluctuates slightly. This is because when the voltage amplitude value of the modulation signal is increased to a value equal to or greater than the half-wave voltage, the waveform of the modulation signal is distorted, and the light intensity of the light emitted from the optical modulator deviates from the theoretical value or causes noise. This is considered to be because a large amount is included, and accurate measurement becomes difficult.
Also, if the voltage amplitude value of the modulation signal is too small, the optical spectrum distribution reflecting the modulation such as the + 1st-order higher-order term is not clearly formed, and the influence of noise is strongly exerted, which makes accurate measurement difficult. Conceivable.
【0032】図9は、測定周波数10〜40GHzの変
調信号を印加した場合の光変調器の特性測定結果を示
す。図9が示すように、本発明の測定方法及び装置を利
用すれば、従来のように光変調器からの出射光の変動を
直接観測すること無しに、高周波数の特性まで有効に測
定できることが可能となる。FIG. 9 shows a characteristic measurement result of the optical modulator when a modulation signal having a measurement frequency of 10 to 40 GHz is applied. As shown in FIG. 9, by using the measuring method and apparatus of the present invention, it is possible to effectively measure even high frequency characteristics without directly observing the fluctuation of the light emitted from the optical modulator as in the conventional case. It will be possible.
【0033】[0033]
【発明の効果】以上説明したように、本発明によれば、
光変調器から出射する光信号のスペクトル分布を測定す
ることにより、光変調器の特性を測定することが可能と
なるため、従来のような高周波数に対応した高精度な発
振器やサンプリングオシロスコープなどを必要とせず、
安価でかつ精度の高い測定が可能となる。しかも、入射
光と同じスペクトル成分における出射光の光強度が最大
となる場合の該スペクトル成分の出射光の光強度値P
0bと、入射光と同じスペクトル成分における出射光の
光強度が最小となる場合の変調周波数に係る成分の出射
光の光強度値P1cとを、変調電圧を印加しない場合の
出射光の光強度値P0aにより規格化した値を用いるこ
とにより、光変調器に係る半波長電圧値やチャープパラ
メータを容易に算出することができる。As described above, according to the present invention,
It is possible to measure the characteristics of the optical modulator by measuring the spectral distribution of the optical signal emitted from the optical modulator. Without needing
Inexpensive and highly accurate measurement is possible. Moreover, when the light intensity of the emitted light in the same spectrum component as the incident light is maximum, the light intensity value P of the emitted light of the spectrum component is obtained.
0b and the light intensity value P 1c of the emitted light of the component related to the modulation frequency when the light intensity of the emitted light in the same spectrum component as the incident light is the minimum, the light intensity of the emitted light when the modulation voltage is not applied By using the value standardized by the value P 0a, it is possible to easily calculate the half-wavelength voltage value and the chirp parameter related to the optical modulator.
【図1】 MZ型光変調器の概略図。FIG. 1 is a schematic diagram of an MZ type optical modulator.
【図2】 MZ型光変調器の印加電圧に対する出力光強
の特性を示すグラフ。FIG. 2 is a graph showing characteristics of output light intensity with respect to an applied voltage of the MZ type optical modulator.
【図3】 MZ型光変調器の電気入力波形に対する光出
力波形との関係を示すグラフ。FIG. 3 is a graph showing the relationship between the electrical input waveform and the optical output waveform of the MZ type optical modulator.
【図4】 本発明の光変調器の特性測定方法の一例を示
すブロック図。FIG. 4 is a block diagram showing an example of a characteristic measuring method of an optical modulator of the present invention.
【図5】 MZ型光変調器の光導波路の構成図。FIG. 5 is a configuration diagram of an optical waveguide of an MZ type optical modulator.
【図6】 光変調器から出射する光信号のスペクトル分
布を示すグラフ。FIG. 6 is a graph showing a spectral distribution of an optical signal emitted from an optical modulator.
【図7】 本発明の光変調器の特性測定装置の一例を示
す概略図。FIG. 7 is a schematic diagram showing an example of a characteristic measuring apparatus for an optical modulator of the present invention.
【図8】 本発明を利用して測定した光変調器の各種特
性値に対する、変調信号の入力電圧振幅の変化の影響を
示すグラフ。FIG. 8 is a graph showing the influence of changes in the input voltage amplitude of the modulation signal on various characteristic values of the optical modulator measured using the present invention.
【図9】 本発明を利用して測定された、光変調器の各
種特性と変調信号の周波数との関係を示すグラフ。FIG. 9 is a graph showing the relationship between various characteristics of the optical modulator and the frequency of the modulation signal, which is measured using the present invention.
10 MZ型光変調器 20 光導波路 30 信号源 10 MZ type optical modulator 20 optical waveguide 30 signal sources
───────────────────────────────────────────────────── フロントページの続き (72)発明者 及川 哲 東京都港区芝2丁目31番19号 通信・放送 機構内 (72)発明者 井筒 雅之 東京都小金井市貫井北町4−2−1 独立 行政法人通信総合研究所内 (72)発明者 日隈 薫 東京都港区芝2丁目31番19号 通信・放送 機構内 (72)発明者 川西 哲也 東京都小金井市貫井北町4−2−1 独立 行政法人通信総合研究所内 Fターム(参考) 2G086 EE12 2H079 AA02 AA13 DA03 HA11 KA18 KA19 KA20 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Satoshi Oikawa 2-31-19 Shiba, Minato-ku, Tokyo Communication and broadcasting Within the mechanism (72) Inventor Masayuki Izutsu 4-2-1 Kanaikitamachi, Koganei City, Tokyo Independent Communications Research Institute (72) Inventor Kaoru Nikuma 2-31-19 Shiba, Minato-ku, Tokyo Communication and broadcasting Within the mechanism (72) Inventor Tetsuya Kawanishi 4-2-1 Kanaikitamachi, Koganei City, Tokyo Independent Communications Research Institute F term (reference) 2G086 EE12 2H079 AA02 AA13 DA03 HA11 KA18 KA19 KA20
Claims (5)
少なくとも一方に電気信号を印加することにより位相変
調を行い、その後、該分岐した光を合成することにより
強度変調された光信号を発生する光変調器に対し、 該光信号のスペクトル分布を測定し、該測定されたスペ
クトル分布に係る測定値から該光変調器の強度変調に係
る特性値を算出することを特徴とする光変調器の特性測
定方法。[Claim 1] An incident light is split into two or more beams, phase modulation is performed by applying an electric signal to at least one of the split lights, and then the intensity-modulated light is synthesized by combining the split lights. The optical modulator that generates a signal is characterized in that the spectral distribution of the optical signal is measured, and the characteristic value related to the intensity modulation of the optical modulator is calculated from the measured value related to the measured spectral distribution. Optical modulator characteristics measurement method.
において、 該電気信号がバイアス電圧と変調信号とからなり、 該測定値は、該バイアス電圧の可変調整により、入射光
と同じスペクトル成分における出射光の光強度が最大と
なる場合の該スペクトル成分の出射光の光強度値
P0b、入射光と同じスペクトル成分における出射光の
光強度が最小となる場合の変調周波数に係る成分の出射
光の光強度値P1c、及び該変調信号を印加しない場合
の出射光の光強度値P0aであり、 該光変調器の強度変調に係る特性値の算出に際し、該光
強度値P0aにより該光強度値P0bと該光強度値P
1cとを規格化した値を用いることを特徴とする光変調
器の特性測定方法。2. The method of measuring the characteristics of an optical modulator according to claim 1, wherein the electric signal is composed of a bias voltage and a modulation signal, and the measured value is the same as that of the incident light by variably adjusting the bias voltage. The light intensity value P 0b of the emitted light of the spectrum component when the light intensity of the emitted light in the spectrum component is maximum, and the component related to the modulation frequency when the light intensity of the emitted light in the same spectrum component as the incident light is the minimum Is the light intensity value P 1c of the emitted light and the light intensity value P 0a of the emitted light when the modulation signal is not applied, and when calculating the characteristic value related to the intensity modulation of the optical modulator, the light intensity value P 1c 0a , the light intensity value P 0b and the light intensity value P 0
1c and a standardized value are used to measure the characteristic of the optical modulator.
定方法において、 該光変調器の強度変調に係る特性値は、該光変調器の半
波長電圧値であることを特徴とする光変調器の特性測定
方法。3. The characteristic measuring method for an optical modulator according to claim 1, wherein the characteristic value related to intensity modulation of the optical modulator is a half wavelength voltage value of the optical modulator. Measuring method for characteristics of optical modulator.
定方法において、 該光変調器の強度変調に係る特性値は、該光変調器のチ
ャープパラメータ値であることを特徴とする光変調器の
特性測定方法。4. The method for measuring the characteristic of an optical modulator according to claim 1, wherein the characteristic value relating to the intensity modulation of the optical modulator is a chirp parameter value of the optical modulator. Optical modulator characteristics measurement method.
器の特性測定方法を用いたことを特徴とする光変調器の
特性測定装置。5. A characteristic measuring apparatus for an optical modulator, which uses the characteristic measuring method for an optical modulator according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001337450A JP3866082B2 (en) | 2001-11-02 | 2001-11-02 | Method and apparatus for measuring characteristics of optical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001337450A JP3866082B2 (en) | 2001-11-02 | 2001-11-02 | Method and apparatus for measuring characteristics of optical modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003139653A true JP2003139653A (en) | 2003-05-14 |
| JP3866082B2 JP3866082B2 (en) | 2007-01-10 |
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| JP2008090347A (en) * | 2006-09-29 | 2008-04-17 | Toppan Printing Co Ltd | Takeover server, system, method, program, and campaign server |
| JP2009014889A (en) * | 2007-07-03 | 2009-01-22 | Japan Atomic Energy Agency | Analyzer for evaluating performance of optical shutter |
| WO2009110039A1 (en) * | 2008-03-07 | 2009-09-11 | 独立行政法人情報通信研究機構 | Method for evaluating characteristics of optical modulator having high-precision mach-zehnder interferometer |
| WO2009113128A1 (en) * | 2008-03-13 | 2009-09-17 | 独立行政法人情報通信研究機構 | Method for evaluating characteristic of optical modulator having mach-zehnder interferometers |
| JP2009229926A (en) * | 2008-03-24 | 2009-10-08 | Sumitomo Osaka Cement Co Ltd | Method of measuring half-wave voltage of light modulator |
| JP2011013328A (en) * | 2009-06-30 | 2011-01-20 | Anritsu Corp | Operation condition estimation method in optical modulator and optical spectrum analyzer |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008090347A (en) * | 2006-09-29 | 2008-04-17 | Toppan Printing Co Ltd | Takeover server, system, method, program, and campaign server |
| JP2009014889A (en) * | 2007-07-03 | 2009-01-22 | Japan Atomic Energy Agency | Analyzer for evaluating performance of optical shutter |
| WO2009110039A1 (en) * | 2008-03-07 | 2009-09-11 | 独立行政法人情報通信研究機構 | Method for evaluating characteristics of optical modulator having high-precision mach-zehnder interferometer |
| US8351047B2 (en) | 2008-03-07 | 2013-01-08 | National Institute Of Information And Communications Technology | Method for evaluating characteristics of optical modulator having high-precision Mach-Zehnder interferometers |
| WO2009113128A1 (en) * | 2008-03-13 | 2009-09-17 | 独立行政法人情報通信研究機構 | Method for evaluating characteristic of optical modulator having mach-zehnder interferometers |
| JPWO2009113128A1 (en) * | 2008-03-13 | 2011-07-14 | 独立行政法人情報通信研究機構 | Evaluation method of optical modulator with multiple Mach-Zehnder interferometers |
| JP5035411B2 (en) * | 2008-03-13 | 2012-09-26 | 独立行政法人情報通信研究機構 | Evaluation method of optical modulator with multiple Mach-Zehnder interferometers |
| US8446591B2 (en) | 2008-03-13 | 2013-05-21 | National Institute Of Information And Communications Technology | Method for evaluating characteristics of optical modulator having Mach-Zehnder interferometers |
| US8693005B2 (en) | 2008-03-13 | 2014-04-08 | National Institute Of Information And Communications Technology | Method for evaluating characteristics of optical modulator having Mach-Zehnder interferometers |
| JP2009229926A (en) * | 2008-03-24 | 2009-10-08 | Sumitomo Osaka Cement Co Ltd | Method of measuring half-wave voltage of light modulator |
| JP2011013328A (en) * | 2009-06-30 | 2011-01-20 | Anritsu Corp | Operation condition estimation method in optical modulator and optical spectrum analyzer |
| JP2012168185A (en) * | 2012-04-04 | 2012-09-06 | National Institute Of Information & Communication Technology | Characteristic evaluation method of optical modulator having plural mach-zehnder interferometers |
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