JP2003249584A - Semiconductor element storage package and semiconductor device - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To improve the bonding strength of external lead terminals by forming a brazing material pool at the joint between an external lead terminal and a metallized wiring layer, and to mount a semiconductor device on an external electric circuit board. (1) To prevent the external lead terminals from coming off by preventing stress from being applied to the joint even when the external lead terminals are moved up and down, and to facilitate positioning when attaching the external lead terminals to the metallized wiring layer. An input / output terminal (4) has a concave portion (8) formed in a joint portion of a metallized wiring layer (4a) with an external lead terminal (7) on the upper surface of a flat plate portion (4c). A thin portion 7a having a thickness of 0.15 to 0.4 times the remaining portion is formed from the middle to a portion outside the flat plate portion 4c, and the lower end of one end is inserted into the recess 8 and brazed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package and a semiconductor device having an improved connection structure between input / output terminals and external lead terminals.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package (hereinafter, also referred to as a semiconductor package) for housing various semiconductor elements used in the field of optical communication or using high frequency signals such as a microwave band and a millimeter wave band is a semiconductor device. It is provided with a thermoelectric cooling element such as a Peltier element for forcibly moving the heat generated from the substrate to the substrate to stably operate the semiconductor element. For example, an optical semiconductor element such as a semiconductor laser (LD) or a photodiode (PD) is used as a semiconductor element, and a perspective view of a semiconductor package in which a Peltier element is provided as a thermoelectric cooling element is shown in FIG. 3, and an input / output terminal and an external lead terminal are shown. FIG. 4 shows an enlarged cross-sectional view of the joint portion with and. In these figures, 21 is a base, 23 is a frame, 24 is an input / output terminal, 31 is a thermoelectric cooling element, and 34 is a lead wire.

The base 21 is iron (Fe) -nickel (Ni)-
It is made of a metal such as a cobalt (Co) alloy or a sintered material such as copper (Cu) -tungsten (W), and a semiconductor element such as an optical semiconductor element such as an LD or PD is formed in a substantially central portion of an upper main surface thereof.
Mounting part 21a for mounting the thermoelectric cooling element 31 formed by mounting 30
have.

The mounting portion 21 is provided on the outer peripheral portion of the upper main surface of the base 21.
a is joined so as to surround a, and the optical fiber 32 is attached to the side wall.
An optical fiber fixing member (hereinafter, also referred to as a fixing member) 22 for fixing an optical fiber and a frame body 23 having a mounting portion 23a of the input / output terminal 24 are provided upright. A cavity is formed to house the element 30. The frame body 23 is similar to the base body 21 in that Fe-Ni-Co alloy and Cu-W.
Made of a sintered material, etc., and integrally molded with the base 21, or brazed to the base 21 via a brazing material such as silver (Ag) brazing, or joined by a welding method such as a seam welding method. Is erected on the outer peripheral portion of the upper main surface of the base 21.

The fixing member 22 has a window member (not shown) made of a translucent material such as sapphire or glass at the inner end portion of the frame body 23. The optical fiber 32 is inserted and fixed.

The input / output terminal 24 is made of alumina (Al ₂ O ₃ )
Aluminum nitride (AlN), mullite (3Al ₂ O ₃ ·
2SiO ₂ ) and other ceramics, and is fitted and joined to the mounting portion 23a of the frame body 23 via a brazing material, and a large number of metallized wiring layers 24a for electrically conducting the inside and outside of the frame body 23 are adhered and formed. There is. Further, the input / output terminal 24 has a flat plate portion 24c protruding inward and outward from the frame body 23 and a standing wall portion 24b fitted to the frame body 23.

External lead terminals 27 made of a metal such as Fe--Ni--Co alloy are attached to a portion of the metallized wiring layer 24a outside the frame body 23 through a brazing material such as Ag brazing, while the metallized wiring layer is formed. Electrodes of the semiconductor element 30 are electrically connected to the inside of the frame body 23 of 24a through the bonding wires 33, and the tip ends of the lead wires 34 of the thermoelectric cooling element 31 are soldered and electrically connected. Connected. The connecting portion of the lead wire 34 of the metallized wiring layer 24a has a side surface substantially perpendicular to the lead-out direction of the metallized wiring layer 24a of the input / output terminal 24 on the frame 23.
A notch having a U-shaped cross section is provided on the inner side surface, and a metallized wiring layer 24a is extended on the inner surface of the notch. As a result, the joint area of the solder between the inner surface of the cutout portion and the lead wire 34 is enlarged, and the connection between the input / output terminal 24 and the lead wire 34 is strengthened.

On the upper surfaces of the frame 23 and the input / output terminal 24, F
A seal ring 25 made of a metal such as an e-Ni-Co alloy is joined via a brazing material such as Ag braze to form a seal ring 25.
A lid 26 made of a metal such as an Fe-Ni-Co alloy is joined to the upper surface of the substrate by a welding method such as a brazing method or a seam welding method, and the base 21, the frame 23, the seal ring 25 and the lid 26 are joined together. The semiconductor element 30 is housed in the container formed and hermetically sealed.

Finally, the optical fiber 32 is joined to the fixing member 22 provided on the frame body 23 by welding or the like, and the optical fiber 32 is fixed to the frame body 23 to obtain a semiconductor device as a product. In this case, the optical fiber 32 has a metal flange 32a attached to its end in advance, and the metal flange 32a
Are welded to the fixing member 22 by, for example, a laser welding method.

This semiconductor device excites light in the semiconductor element 30 by an electric signal supplied from an external electric circuit,
By transmitting this light to the outside through the optical fiber 32, it is used for high-speed optical communication or the like. Alternatively, an optical signal transmitted from the outside through the optical fiber 32 is transmitted through a transparent member and received by the semiconductor element 30 to convert the optical signal into an electric signal, which is used for high-speed optical communication or the like. It

In this semiconductor device, the semiconductor element 30
In order to radiate the heat generated during operation to the outside,
A thermoelectric cooling element 31 is arranged between the semiconductor element 30 and the base 21. In this thermoelectric cooling element 31, a ceramic substrate is provided on each of the surface bonded to the base 21 and the surface on which the semiconductor element 30 is mounted, and the ceramic substrate on the surface bonded to the base 21 of the thermoelectric cooling element 31 is An electrode is formed on the upper surface. One end of a lead wire 34 is connected to this electrode.

The other end of the lead wire 34 is electrically connected to the metallized wiring layer 24a by soldering, and is externally connected to the thermoelectric cooling element 31 via the external lead terminal 27, the metallized wiring layer 24a and the lead wire 34. Power is supplied. That is, the lead wire 34 operates the thermoelectric cooling element 31 as a heat pump that transfers heat from the semiconductor element 30 to the base 21 by supplying a driving voltage to the thermoelectric cooling element 31. Therefore, the heat of the semiconductor element 30 is transferred to the base 21 via the thermoelectric cooling element 31.
Is forced to be transmitted to the atmosphere from the substrate 21, and as a result, the semiconductor element 30 always operates stably at a constant temperature.

[0013]

However, in the conventional semiconductor device described above, the external lead terminal 27 moves up and down when mounted on the external electric circuit board, and stress or external force is applied to the brazing portion, so that the external lead terminal is There was a problem that 27 came off. Further, since the width of the external lead terminal 27 is as small as about 0.5 mm, it is difficult to position the external lead terminal 27, and there is a problem that a positional deviation easily occurs when the external lead terminal 27 is mounted on the metallized wiring layer 24a of the flat plate portion 24c of the input / output terminal 24.

Therefore, the present invention has been completed in view of the above problems, and an object thereof is to form a brazing material reservoir at the joint between the external lead terminal and the metallized wiring layer to improve the joint strength of the external lead terminal. Also, because the external lead terminals are easier to absorb the deformation, when the semiconductor device is mounted on the external electric circuit board, stress is less likely to be applied to the joint even if the external lead terminals move up and down, preventing the external lead terminals from coming off. Further, it is to facilitate positioning when attaching the external lead terminal to the metallized wiring layer.

[0015]

A package for housing a semiconductor element according to the present invention comprises a base body having a mounting portion on the upper main surface on which a semiconductor element is mounted via a thermoelectric cooling element, and the upper main body of the base body. A metal frame which is attached to the surface so as to surround the above-mentioned mounting portion, and which has an input / output terminal mounting portion consisting of a through hole or a notch on the side, and which faces from one side of the upper surface It is composed of a flat plate portion made of a dielectric material having a plurality of metallized wiring layers formed along the side and a standing wall portion made of a dielectric material bonded to the upper surface of the flat plate portion with the plurality of metallized wiring layers interposed therebetween. In the package for storing a semiconductor element, which further comprises an input / output terminal fitted to the mounting portion, and an external lead terminal having one end brazed to a portion of the metallized wiring layer outside the frame, The terminals are A concave portion is formed on the upper surface of the flat plate portion in the joint portion of the metallized wiring layer with the external lead terminal, and the external lead terminal extends from the middle of the one end portion of the lower surface to a portion outside the flat plate portion. A thin portion having a thickness of 0.15 to 0.4 times the remaining portion is formed, and the tip of the lower surface of the one end is inserted into the recess and brazed.

According to the present invention, since the brazing material reservoir is formed at the brazing portion (joint portion) between the external lead terminal and the metallized wiring layer, the joining strength of the external lead terminal is improved. In addition, by forming a thin portion near one end of the external lead terminal, the external lead terminal easily absorbs the deformation, and even if the external lead terminal moves up and down when the semiconductor device is mounted on the external electric circuit board, it is bonded. Stress is less likely to be applied to the parts, and the external lead terminals can be prevented from coming off. Also,
Since the tip of the lower surface of the external lead terminal is inserted into the recess and brazed, the positioning when mounting the external lead terminal on the flat plate portion of the input / output terminal becomes easy.

The semiconductor device of the present invention includes the above-mentioned package for accommodating a semiconductor element of the present invention, a semiconductor element mounted on the mounting portion and electrically connected to the input / output terminals, and the frame body. It has a lid joined to the upper surface.

The semiconductor device of the present invention has a high reliability by using the above-described package for accommodating a semiconductor element of the present invention because of the above-mentioned structure.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION The semiconductor element housing package of the present invention will be described in detail below. FIG. 1 is a perspective view showing an example of an embodiment of a semiconductor package of the present invention,
2 is an enlarged cross-sectional view of a joint portion between the input / output terminal and the external lead terminal in the semiconductor package of FIG. In these figures, 1 is a base, 3 is a frame, 4 is an input / output terminal, 11 is a thermoelectric cooling element, and 14 is a lead wire.

The substrate 1 of the present invention is made of a metal such as Fe-Ni-Co alloy or a Cu-W sintered material, and its ingot is subjected to a well-known metal processing method such as rolling or punching.
Alternatively, it is manufactured into a predetermined shape by performing injection molding and cutting. Further, on the upper main surface of the base 1, L
A mounting portion 1a on which a thermoelectric cooling element 11 such as a Peltier element having a semiconductor element 10 such as an optical semiconductor element such as D or PD mounted thereon is mounted.
Is provided, and the semiconductor element 10 is mounted and fixed on the mounting portion 1 a in a state of being mounted on the thermoelectric cooling element 11.

Further, a cylindrical fixing member 2 for fixing the optical fiber 12 is provided on the outer peripheral portion of the upper main surface of the base body 1 so as to surround the mounting portion 1a so as to surround the mounting portion 1a. A frame body 3 having a through hole and a mounting portion 3a for the input / output terminal 4 is provided upright, and the frame body 3 forms a space for accommodating the semiconductor element 10 inside the base body 1 together with the base body 1.

The fixing member 2 has a cylindrical shape such as a cylindrical shape made of a metal such as Fe-Ni-Co alloy, and the end portion inside the frame 3 is made of a transparent material such as sapphire or glass. The optical fiber 12 is closed by an unillustrated), and the optical fiber 12 is inserted and fixed from the end portion outside the frame body 3. The optical fiber 12 has a metal flange 12a attached to the end thereof in advance, and the metal flange 12a is fixed by a YAG laser welding method, for example.
It is fixed to the frame body 3 by welding. As a result, the semiconductor element housed inside via the optical fiber 12
It becomes possible to send and receive optical signals between 10 and the outside.

The frame body 3 is a substantially rectangular frame body, and is for supporting the fixing member 2 and the input / output terminal 4.
Further, the frame 3 is made of a sintered material such as Fe—Ni—Co alloy or Cu—W like the base body 1, and is integrally molded with the base body 1, or is formed on the base body 1 through a brazing material such as Ag wax. By being brazed or joined to the base body 1 by a welding method such as a seam welding method, the base body 1 is erected on the outer peripheral portion of the upper main surface.

The input / output terminal 4 is made of Al ₂ O ₃ , AlN, 3Al.
Inverted T cross-section consisting of ₂ O ₃ · 2SiO ₂ etc. Ceramics
It is a character-shaped member and is fitted into the mounting portion 3a of the frame body 3 and melted in the gap between the input / output terminal 4 and the mounting portion 3a.
It is fitted and joined to the frame body 3 by filling a brazing material such as g wax by a capillary phenomenon. On the upper surface of the flat plate portion 4c of the input / output terminal 4, a large number of metallized wiring layers 4a for electrically conducting the inside and outside of the frame body 3 are adhered and formed.
Serves as a part of the frame body 3 to airtightly partition the inside and outside of the frame body 3 and functions as a conductive path for conducting the inside and outside of the frame body 3.

When the input / output terminal 4 is made of, for example, Al ₂ O ₃ ceramics, it is manufactured as follows. First, a raw material powder of Al ₂ O ₃ , silicon oxide (SiO ₂ ), calcium oxide (CaO), magnesium oxide (MgO), etc. is mixed with an appropriate organic binder, plasticizer, dispersant, solvent, etc. And eggplant A plurality of ceramic green sheets are obtained by forming this into a sheet by a conventionally known doctor blade method. Thereafter, these ceramic green sheets are subjected to appropriate punching processing, and a metal paste to be the metallized wiring layer 4a is printed and applied to be laminated. Finally, a metal paste to be a metallized metal layer is print-coated on the surface of the laminate, which is to be joined to the frame 3 and the seal ring 5 described later, and is baked at a temperature of about 1600 ° C. in a reducing atmosphere. To be done.

The metal pastes for the metallized wiring layer 4a and the metallized metal layer are W, molybdenum (M
o), high-melting-point metal powder such as manganese (Mn) and the like, mixed with an appropriate organic binder and solvent to form a paste, which is printed by a conventionally known screen printing method to obtain a ceramic green sheet and its lamination. Printed on the body.

Further, the input / output terminal 4 has a flat plate portion 4c projecting in and out of the frame body 3 and a standing wall portion 4b fitted in the frame body 3.

External lead terminals 7 made of a metal such as Fe--Ni--Co alloy are joined to a portion of the metallized wiring layer 4a outside the frame 3 through a brazing material such as Ag solder, and the metallized wiring layer 4a is formed. A semiconductor element is provided on the inner side of the frame 3.
Each electrode of 10 is electrically connected via the bonding wire 13, and the lead wire 14 of the thermoelectric cooling element 11 is electrically connected.

In the present invention, as shown in FIG. 2, the input / output terminal 4 has the metallized wiring layer 4a on the upper surface of the flat plate portion 4c.
The recess 8 is formed in the joint with the external lead terminal 7, and the external lead terminal 7 has a thickness of 0.15 to 10% from the middle of one end of the lower surface to the outside of the flat plate portion 4c.
A 0.4-fold thin portion 7a is formed, and the tip of the lower surface of one end is inserted into the recess 8 and brazed.

Thickness X of thin portion 7a of external lead terminal 7
However, when the thickness is less than 0.15 times the thickness of the external lead terminal 7 other than the thin portion 7a, the thin portion 7a becomes too thin and its processing becomes difficult. When it exceeds 0.4 times, the brazing material reservoir 9 formed between the tip of the external lead terminal 7 and the recess 8 becomes small, and the bonding strength of the external lead terminal 7 decreases. Further, it is preferable that both end surfaces in the longitudinal direction of the thin portion 7a are concave curved surfaces. In this case, by making it a concave curved surface,
It is possible to disperse the stress that tends to occur at the corners of the thin portion 7a at both ends in the longitudinal direction.

The length of the thin portion 7a in the longitudinal direction of the external lead terminal 7 is preferably 0.25 to 10 mm. If the thickness is less than 0.25 mm, the external lead terminal 7 is less likely to absorb the deformation, and when the semiconductor device is mounted on the external electric circuit board, the external lead terminal 7 moves up and down, and stress is easily applied to the joint portion. 7 is likely to come off. When it exceeds 10 mm, the external lead terminal 7 is easily detached because the joint area between the external lead terminal 7 and the external electric circuit board becomes small when the external lead terminal 7 is connected to the external electric circuit board. The width of the external lead terminal 7 is generally about 0.2 to 1 mm.

Further, since the concave portion 8 is formed on the upper surface of the flat plate portion 4c in the joint portion of the external lead terminal 7 of the metallized wiring layer 4a, when the external lead terminal 7 is joined,
The positional deviation of the external lead terminals 7 can be reliably prevented and the positioning can be performed easily. Further, it is possible to prevent the brazing material from flowing from the metallized wiring layer 4a to the adjacent metallized wiring layer 4a. The depth of the recess 8 is preferably 0.05 mm or more. 0.05m
If it is less than m, the brazing material pool 9 is hardly formed in the recesses 8, so that the bonding strength of the external lead terminals 7 is likely to decrease. In addition, the brazing material is caused to flow between the adjacent metallized wiring layers 4a, so that an electrical short circuit easily occurs.

On the upper surfaces of the frame 3 and the input / output terminals 4, F
A seal ring 5 made of a metal such as an e-Ni-Co alloy is joined via a brazing material such as Ag braze, and a lid 6 made of a metal such as Fe-Ni-Co alloy is brazed to the upper surface of the seal ring 5. And welding methods such as seam welding. Then, the semiconductor element 10 is housed and hermetically sealed in a container composed of the base body 1, the frame body 3, the seal ring 5, and the lid body 6 to form a semiconductor device as a product.

In this semiconductor device, the base body 1 is mounted on an external electric circuit board by soldering, screwing, or the like, and the external lead terminals 7 and the external electric circuit are connected to each other. The thermoelectric cooling element 11 is electrically connected to an external electric circuit. And semiconductor device
When 10 operates with a high frequency signal and the thermoelectric cooling element 11 operates normally, the heat of the semiconductor element 10 is forcibly transferred to the base body 1 through the thermoelectric cooling element 11 and diffused from the base body 1 into the atmosphere. The temperature of the semiconductor element 10 is always kept constant and the semiconductor element 10 always operates stably.

Further, this semiconductor device excites light in the semiconductor element 10 by a high frequency signal supplied from an external electric circuit, for example, and transmits this light to the outside through the optical fiber 12 for high speed optical communication or the like. used. Alternatively, an optical signal transmitted from the outside through an optical fiber 12 is transmitted through a translucent member and received by the semiconductor element 10 to convert the optical signal into an electric signal, which is used for high-speed optical communication or the like.

[0036]

Embodiments of the semiconductor package of the present invention will be described below.

The semiconductor package shown in FIGS. 1 and 2 was manufactured as follows. First, the input / output terminal 4 was manufactured as follows. A binder, a plasticizer, a solvent, etc. were added to and mixed with a raw material powder of alumina, silica, calcia, magnesia, etc. to form a paste. Next, this paste was made into a ceramic green sheet for multi-pickup by the doctor blade method. Next, a metal paste containing Mo-Mn for forming the metallized layer wiring layer 4a is printed and applied to the ceramic green sheet for multi-cavity forming the flat plate portion 4c, and the portion to be the concave portion 8 is formed by punching. At the same time, the metal paste for forming the metallized wiring layer 4a is applied by printing onto the inner surface of the recess 8. Next, using this ceramic green sheet as the uppermost layer, a plurality of ceramic green sheets in which the recesses 8 were not formed were laminated so that they were on the lower side thereof. Further, a plurality of ceramic green sheets for multi-piece forming, which will be the standing wall portion 4b, were laminated.

Further, a laminated body of the ceramic green sheets to be the flat plate portion 4c and a laminated body of the ceramic green sheets to be the standing wall portion 4b were laminated on the laminated body to be the input / output terminals 4. Approximately 1600 ℃ in this reducing atmosphere in a reducing atmosphere
Each of the input / output terminals 4 was manufactured by firing at the temperature of 1.

Next, the input / output terminal 4 was fitted and joined to the mounting portion 3a formed by notching the upper surface of the frame body 3 via a brazing material such as silver brazing. Next, the seal ring 5 was joined to the upper surface of the frame body 3 with a brazing material such as silver brazing so that the input / output terminal 4 was held from above. Then, the thermoelectric cooling element 11 is adhered and fixed to the mounting portion 1a of the base body 1 with a brazing material, and one end of the external lead terminal 7 is brazed to a portion of the flat plate portion 4c outside the frame body 3 of the metallized wiring layer 4a. , A semiconductor package was manufactured.

Width 0.5 mm, thickness 0.2 mm, length 9
mm external lead terminal 7 and the bonding strength (tensile strength) between the flattened portion 4c of the input / output terminal 4 and the metallized wiring layer 4a
Was measured.

At this time, various types of samples manufactured as described above were used as the semiconductor package. That is, the one using the external lead terminal 27 (FIG. 4) having no recess 8 and the thin portion 7a (conventional example: sample 1),
When the recess 8 is formed and the thickness of the thin portion 7a of the external lead terminal 7 is 0.5 with respect to the thickness of the remaining portion (Comparative Example; Sample 2), the recess 8 is formed and the external lead terminal is formed. 7 has a thickness of 0.15 with respect to the thickness of the remaining portion (Example; Sample 3), the recess 8 is formed and the thickness of the thin portion 7a of the external lead terminal 7 is equal to the remaining portion. What was 0.4 with respect to thickness (Example; sample 4) was prepared. Also, samples 2-4
The depth of each recess 8 was 0.1 mm.

In each of Samples 1 to 4, the volume (volume) of the brazing material that joins the external lead terminal 7 and the metallized wiring layer 4a was constant, and five samples were prepared for each sample.

The bonding strength is measured at the tip of a push-pull gauge (product name "CPU GAUGE", manufactured by Aiko Engineering Co., Ltd.) at the end of the external lead terminal 7 which is not bonded to the metallized wiring layer 4a. The auxiliary lead terminal was welded, and the push-pull gauge was pulled at a speed of 10 mm / min to pull the external lead terminal 7 from the metallized wiring layer 4a in a direction perpendicular to the upper surface of the flat plate portion 4c and peeled off. At the time of peeling, the external lead terminal 7 initially undergoes elastic deformation to increase the bonding strength value, but when completely peeled off from the metallized wiring layer 4a, the bonding strength value stops increasing. The value was defined as the bonding strength.

The sample 3 of the example of the present invention had a considerably high bonding strength of about 40 N (Newton) and the sample 4 of the example had a bonding strength of about 38 N, whereas the sample 1 of the conventional example had a bonding strength of about 40 N (newton).
The bonding strength was 25 N, and the comparative sample 2 was about 30 N, which was low in bonding strength.

Further, in each of Samples 1 to 4, when the portion of the external lead terminal 7 joined to the metallized wiring layer 4a was observed under a microscope at a magnification of about 20 times, in the case of Sample 1, a brazing material pool was formed. There wasn't. In the case of sample 2, only a small amount of brazing material reservoir 9 was formed. In the case of samples 3 and 4, a brazing material reservoir 9 larger than that of sample 2 was formed.

The present invention is not limited to the above-described embodiments and examples, and various modifications may be made without departing from the scope of the present invention. For example, the semiconductor element 10 may be a semiconductor integrated circuit element such as an IC or LSI, in which case the fixing member 2 and the optical fiber 12 are unnecessary.

[0047]

In the package for accommodating a semiconductor element of the present invention, the input / output terminal has the concave portion formed on the upper surface of the flat plate portion in the joint portion of the metallized wiring layer with the external lead terminal,
The external lead terminal has a thin part whose thickness is 0.15 to 0.4 times the remaining part from the middle of one end of the lower surface to the part outside the flat plate part, and the tip of the lower surface of the one end is inserted into the recess. Since the brazing material is formed at the joint between the external lead terminal and the metallized wiring layer by brazing, the bonding strength of the external lead terminal is improved. Further, by forming a thin portion near one end of the external lead terminal, the external lead terminal easily absorbs the deformation,
Even if the external lead terminal moves up and down when the semiconductor device is mounted on the external electric circuit board, stress is less likely to be applied to the joint portion, and the external lead terminal can be prevented from coming off. Moreover, since the tip of the lower surface of the external lead terminal is inserted into the recess and brazed, the positioning when mounting the external lead terminal on the flat plate portion of the input / output terminal becomes easy.

In the semiconductor device of the present invention, the semiconductor element housing package of the present invention, the semiconductor element mounted on the mounting portion and electrically connected to the input / output terminals are bonded to the upper surface of the frame. With the above-mentioned lid body, the reliability of the package for accommodating a semiconductor element of the present invention can be increased.

[Brief description of drawings]

FIG. 1 is a perspective view showing an example of an embodiment of a package for housing a semiconductor element of the present invention.

FIG. 2 is a partially enlarged cross-sectional view of a joint portion of an input / output terminal and an external lead terminal in the semiconductor element housing package of FIG.

FIG. 3 is a perspective view of a conventional semiconductor element housing package.

FIG. 4 is a partial enlarged cross-sectional view of a joint portion of an input / output terminal and an external lead terminal in the semiconductor element housing package of FIG.

[Explanation of symbols]

1: Base 1a: Placement part 3: frame 4: Input / output terminal 4a: Metallized wiring layer 4b: Standing wall 4c: Flat plate part 7: External lead terminal 7a: thin portion 8: Recess 10: Semiconductor element 11: Thermoelectric cooling element

Claims (2)

[Claims] 1. A base having a mounting portion on which a semiconductor element is mounted via a thermoelectric cooling element on an upper main surface, and a mounting portion attached to the upper main surface of the base so as to surround the mounting portion. , A dielectric having a metal frame body in which an input / output terminal mounting portion composed of a through hole or a cutout is formed on a side portion and a plurality of metallized wiring layers formed from one side of the upper surface to the opposite side. An input / output terminal which is composed of a flat plate portion made of a body and a standing wall portion made of a dielectric material which is joined to the upper surface of the flat plate portion with the plurality of metallized wiring layers interposed therebetween, and which is fitted to the mounting portion; In a package for storing a semiconductor element, which has an external lead terminal whose one end is brazed to a portion of the metallized wiring layer outside the frame, the input / output terminals are formed on the upper surface of the flat plate portion of the metallized wiring layer. External lead A recess is formed in the joint with the terminal, and the external lead terminal has a thin portion whose thickness is 0.15 to 0.4 times the remaining portion from the middle of the one end of the lower surface to the portion outside the flat plate portion. A package for accommodating a semiconductor element, wherein the package is formed and the tip of the lower surface of the one end is inserted into the recess and brazed. 2. The semiconductor element housing package according to claim 1, the semiconductor element mounted on the mounting portion and electrically connected to the input / output terminals, and bonded to the upper surface of the frame body. A semiconductor device having a lid.