JP2003289123A - Use of epoxy resin molding material for sealing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the use of epoxy resin molding materials for sealing, which are optimal for the manufacture of an superior flow properties and this semiconductor device, where a semiconductor chip is disposed on multiple pins or a mounted board. <P>SOLUTION: Epoxy resin molding materials for sealing containing an epoxy resin (A), a hardening agent (B), a silane coupling agent containing secondary amino group (C), or a phosphate ester (D) are used as the sealing materials of a semiconductor device, equipped with the configurations of the following (a) to (f) as the combination of 1 or 2. That is, (a): at least one of the thickness of sealing materials on the upper face of a semiconductor chip and the back face of the semiconductor chip is 0.7 mm or smaller, b: the number of lead pins is 80 or larger, c: the length of wire is 2 mm or larger, d: pad pitches on the semiconductor chip are 90 μm or smaller, e: the thickness of a package, where a semiconductor chip is disposed on a mounted board is 2 mm or smaller, and f: the area of the semiconductor chip is 25 mm<SP>2</SP>or larger, and 1: the constitutions (a) or (e) and 2: the configuration (a) and at least one of the other configurations b to f. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

The present invention relates to the use of epoxy resin molding compounds for sealing. The present invention also relates to a sealing epoxy resin molding material and a semiconductor device sealed with the same. More specifically, the present invention is a thin, multi-pin,
Epoxy resin molding material for sealing, which has excellent fluidity and is suitable for thin semiconductor devices with long wires, narrow pad pitch, and semiconductor chips arranged on a mounting substrate, and molding of wire flow, voids, etc., which is sealed by this The present invention relates to a thin semiconductor device having few defects and having a thin shape, a large number of pins, a long wire, a narrow pad pitch, and a semiconductor chip arranged on a mounting substrate.

[0002]

2. Description of the Related Art In recent years, high density mounting of electronic parts on a printed wiring board has been advanced. Along with this, the surface mount type of semiconductor device has become mainstream from the conventional pin insertion type package. Surface mount type ICs, LSIs, etc. are thin and small packages in order to increase the mounting density and lower the mounting height, and the volume occupied by the device in the package is large, and the thickness of the package is extremely large. It is getting thinner. Moreover, the chip area and the number of pins are increasing due to the multi-functionalization and large-capacity of the element, and further, the pad pitch and the pad size are reduced due to the increase in the number of pads (electrodes), so-called narrow pad pitch. It is becoming more popular.

Further, in order to cope with further reduction in size and weight,
The form of the package is QFP (Quad Flat Package), S
From OP (Small Outline Package), CSP (Chip Size Package) and BGA (Ball Grid A) that can easily support higher pin counts and enable higher density mounting.
rray) is moving. These packages have been
In order to realize higher speed and more functions, new structures such as face-down type, stacked type, flip chip type, wafer level type have been developed. Among them, the stacked type has a structure in which multiple chips are stacked inside the package and connected by wire bonding, and multiple chips with different functions can be mounted in one package, enabling multiple functions. Becomes

Also, the resin encapsulation process for manufacturing CSP or BGA is different from the conventional encapsulation method for one chip and one cavity, and encapsulation of a plurality of chips in one cavity, that is, so-called collective molding encapsulation. Methods have been developed to improve production efficiency and reduce costs.

On the other hand, the encapsulating material has a high level of reflow resistance, which is a matter of concern when surface-mounting a semiconductor device on a printed circuit board, and temperature cycle property required for reliability after mounting. It has been sought to meet such demands by reducing the resin viscosity and thereby increasing the filling amount of the filler, thereby providing the sealing material with low moisture absorption and low expansion.

[0006]

However, in the conventional encapsulating material, molding defects such as wire flow and voids frequently occur, and it is possible to cope with thinning, a large area of the chip, a large number of pins, a narrow pad pitch, and the like. It was difficult to manufacture a semiconductor device.
In order to respond to this, attempts have been made to improve the sealing material by further reducing the resin viscosity and changing the filler composition.
I haven't got enough results yet. Further, in a stacked type CSP that is to be a long wire and a semiconductor device that is compatible with batch molding with a large cavity volume, more severe flow characteristics are required for the sealing material.

[0007]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an epoxy resin molding material for encapsulation having excellent fluidity for a semiconductor device, and a molding failure such as a wire flow and a void sealed by the encapsulation epoxy resin molding material. The present invention is intended to provide a semiconductor device having less power consumption.

In one preferred aspect, the present invention provides a thin, multi-pin, long wire, narrow pad pitch,
Alternatively, an encapsulating epoxy resin molding material suitable for encapsulating a semiconductor device in which a semiconductor chip is placed on a mounting substrate such as an organic substrate or an organic film is provided.

In another preferred embodiment, according to the present invention, a thin, multi-pin, long wire, narrow pad pitch, or organic substrate, which is encapsulated with the encapsulating epoxy resin molding material of the present invention, is used. Provided is a semiconductor device in which a semiconductor chip is arranged on a mounting substrate such as an organic film.

As a result of intensive studies to solve the above-mentioned problems, the inventors of the present invention have encapsulating a silane coupling agent having a secondary amino group or a phosphoric acid ester as an essential component for a specific semiconductor device. It was found that the above object can be achieved by the epoxy resin molding material for use in the semiconductor device and the semiconductor device encapsulated by the epoxy resin molding material, and the present invention has been completed.

That is, the present invention relates to the following inventions. 1. (A) Epoxy resin and (B) curing agent as a sealing material of a semiconductor device having the following configurations (a) to (f) in combination with the following (1) or (2):
Further, use of an epoxy resin molding material for encapsulation containing (C) a silane coupling agent having a secondary amino group or (D) a phosphoric acid ester. (A) At least one of the thicknesses of the sealing material on the top surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more (1) Configuration (a) or (e) (2) One or more selected from the configuration (a) and other configurations (b) to (f) 2. The configurations of (a) to (f) below are the same as (1) to (f) below.
A silane coupling agent containing (A) an epoxy resin and (B) a curing agent and (C) a secondary amino group as a sealing material for a semiconductor device provided by any combination of (3) or ( D) Use of a sealing epoxy resin molding material containing a phosphoric acid ester. (A) At least one of the thicknesses of the sealing material on the top surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more (1) Configurations (b) and (c) (2) Configurations (b) and (d) (3) Configurations (b), (c) and (d) 3. The configurations of (a) to (f) below are the same as (1) to (f) below.
A silane coupling agent containing (A) an epoxy resin and (B) a curing agent, and (C) a secondary amino group as a sealing material for a semiconductor device provided in any combination of (9), or ( D) Use of a sealing epoxy resin molding material containing a phosphoric acid ester. (A) At least one of the thicknesses of the sealing material on the top surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more (1) Configurations (a) and (b) (2) Configurations (a) and (c) (3) Configurations (a) and (d) (4) Configurations (a) and (f) (5) Configurations (c) and ( e) (6) Structures (a), (b) and (d) (7) Structures (c), (e) and (f) (8) Structures (a), (b), (d) and (f) ) (9) Configurations (a), (b), (c) and (d) 4. The use according to any one of 1 to 3 above, wherein the semiconductor device is a stacked type package. 5. The use according to any one of 1 to 3 above, wherein the semiconductor device is a collective mold type package.

The present invention also relates to the following inventions. 6. A) containing an epoxy resin and (B) a curing agent, further containing (C) a silane coupling agent having a secondary amino group or (D) a phosphoric acid ester, and having a disc flow of 80.
Epoxy resin molding material for sealing having a size of at least mm. 7. 7. The epoxy resin molding material for encapsulation according to 6 above, which is used for a semiconductor device having one or more of the configurations (a) to (f). (A) At least one of the thicknesses of the sealing material on the upper surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less. (F) The area of the semiconductor chip is 25 mm ² or more. 8. The encapsulating epoxy resin molding material as described in 7 above, which is used for a semiconductor device having the configurations of (a) to (f) in the combination of (1) or (2) below. (1) Configuration (a) or (e) (2) One or more selected from the configuration (a) and other configurations (b) to (f) 9. The configurations of (a) to (f) are described below in (1) to
The encapsulating epoxy resin molding material as described in 7 above, which is used for a semiconductor device provided with any combination of (3). (1) Configurations (b) and (c) (2) Configurations (b) and (d) (3) Configurations (b), (c) and (d) 10. The configurations of (a) to (f) are described below in (1) to
The encapsulating epoxy resin molding material as described in 7 above, which is used for a semiconductor device provided in any combination of (9). (1) Configurations (a) and (b) (2) Configurations (a) and (c) (3) Configurations (a) and (d) (4) Configurations (a) and (f) (5) Configuration (c) ) And (e) (6) Configuration (a), (b) and (d) (7) Configuration (c), (e) and (f) (8) Configuration (a), (b), (d) And (f) (9) Configurations (a), (b), (c) and (d) 11. (E) 6 to 1 further containing an inorganic filler
0. The epoxy resin molding material for sealing according to any one of 0. 12. (F) 6 to 1 further containing a curing accelerator
1. The epoxy resin molding material for sealing according to any one of 1. 13. 13. The epoxy resin molding material for sealing according to any of 6 to 12, wherein the semiconductor device is a stacked type package. 14. The encapsulating epoxy resin molding material according to any one of 6 to 13 above, wherein the semiconductor device is a one-piece mold type package. 15. (A) The epoxy resin molding material for encapsulation according to any one of 6 to 14, wherein the epoxy resin has a melt viscosity at 150 ° C. of 2 poise or less. 16. (A) The epoxy resin is a biphenyl type epoxy resin represented by the following general formula (I), a bisphenol F type epoxy resin represented by the following general formula (II), a stilbene type epoxy resin represented by the following general formula (III), and the following: The epoxy resin molding material for encapsulation according to any one of 6 to 15 above, which contains at least one kind of the sulfur atom-containing epoxy resin represented by the general formula (VII).

[Chemical 1] (Here, R ^{1 to} R ⁴ are selected from a hydrogen atom and a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and all may be the same or different. N is 0 to 3. Indicates an integer.)

[Chemical 2] (Here, R ^{1 to} R ⁸ are a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, and 6 to 6 carbon atoms.
It is selected from an aryl group having 10 and an aralkyl group having 6 to 10 carbon atoms, all of which may be the same or different. n is 0
Indicates an integer of ˜3. )

[Chemical 3] (Here, R ^{1 to} R ⁸ are a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, and 6 to 6 carbon atoms.
It is selected from an aryl group having 10 and an aralkyl group having 6 to 10 carbon atoms, all of which may be the same or different. n is 0
Indicates an integer of ˜3. )

[Chemical 4] (R ^{1 to} R ⁸ in the above formula (VII) may be the same or different and each is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, or 6 to 10 carbon atoms.
And an aralkyl group having 6 to 10 carbon atoms. n shows the integer of 0-3. ) 17. (B) The melt viscosity of the curing agent at 150 ° C. is 2
The epoxy resin molding material for encapsulation according to any one of 6 to 16, which has a poise or less. 18. (B) The encapsulation according to any one of 6 to 17 above, wherein the curing agent contains a phenol / aralkyl resin represented by the following general formula (IV) and / or a biphenyl type phenol resin represented by the following general formula (V). Epoxy resin molding material.

[Chemical 5] (Here, R is selected from a hydrogen atom and a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and n represents an integer of 0 to 10.)

[Chemical 6] (Here, R ^{1 to} R ⁹ are a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, and 6 carbon atoms.
Selected from an aryl group having 10 to 10 and an aralkyl group having 6 to 10 carbon atoms, all of which may be the same or different. n shows the integer of 0-10. ) 19. (C) The epoxy resin molding material for encapsulation according to any one of 6 to 18 above, wherein the silane coupling agent having a secondary amino group contains a compound represented by the following general formula (VI).

[Chemical 7] (Here, R ¹ is selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and an alkoxy group having 1 to ² carbon atoms, R ² is selected from an alkyl group having 1 to 6 carbon atoms and a phenyl group, and R
³ represents a methyl group or an ethyl group, n represents an integer of 1 to 6, and m represents an integer of 1 to 3. ) 20. 20. The epoxy resin molding material for sealing according to 19, wherein the silane coupling agent having a secondary amino group (C) is γ-anilinopropyltrimethoxysilane. 21. (D) The epoxy resin molding material for encapsulation according to any one of 6 to 20, wherein the phosphoric acid ester contains a compound represented by the following general formula (X).

[Chemical 8] (Here, 8 R's in the formula represent an alkyl group having 1 to 4 carbon atoms and may be the same or different. Ar represents an aromatic ring.) 22. A semiconductor device encapsulated with the epoxy resin molding material for encapsulation according to any one of 6 to 21. 23. 23. The semiconductor device according to 22 above, comprising one or more of the following configurations (a) to (f). (A) At least one of the thicknesses of the sealing material on the upper surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more

This application is a Japanese patent application previously filed by the same applicant, namely, Japanese Patent Application No. 2000-291067 (filing date: September 25, 2000), Japanese Patent Application No. 2000-40.
No. 2358 (filing date December 28, 2000), Japanese Patent Application 2
000-402359 (filing date December 28, 2000)
Japanese), Japanese Patent Application No. 2000-402360 (filing date 2000
December 28), Japanese Patent Application No. 2000-402361 (filing date December 28, 2000), Japanese Patent Application 2000-402
No. 362 (filing date December 28, 2000), Japanese Patent Application 20
00-402363 (filed on Dec. 28, 2000)
Japanese), Japanese Patent Application No. 2001-82741 (filed on March 22, 2001) with priority claim,
These specifications are incorporated herein by reference.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, a thin type, multi-pin,
An encapsulating epoxy resin molding material suitable for encapsulating a semiconductor device in which a semiconductor chip is disposed on a mounting substrate such as a long wire, a narrow pad pitch, or an organic substrate or an organic film is provided.

Further, according to the present invention, a thin type, which is sealed with the epoxy resin molding material for sealing according to the present invention,
Provided is a semiconductor device in which a semiconductor chip is arranged on a mounting substrate such as a multi-pin, long wire, narrow pad pitch, or organic substrate or organic film.

Each component used in the encapsulating epoxy resin molding material of the present invention will be described below.

The epoxy resin (A) used in the present invention is generally used as a sealing epoxy resin molding material and is not particularly limited. For example, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin. And phenols such as cresol, xylenol, resorcin, catechol, bisphenol A and bisphenol F and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene and formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde,
Epoxidized novolak resin obtained by condensation or co-condensation with a compound having an aldehyde group such as salicylaldehyde under an acidic catalyst, bisphenol A, bisphenol F, bisphenol S, alkyl-substituted or unsubstituted biphenol, etc. Glycidyl ether type epoxy resin such as glycidyl ether, stilbene type epoxy resin, sulfur atom-containing epoxy resin, hydroquinone type epoxy resin, phthalic acid, glycidyl ester type epoxy resin obtained by reaction of epichlorohydrin with polybasic acid such as dimer acid, diamino Glycidylamine-type epoxy resin obtained by reaction of polyamines such as diphenylmethane and isocyanuric acid with epichlorohydrin, co-condensation resin of dicyclopentadiene with phenols and / or naphthols Epoxy compound, epoxy resin having naphthalene ring, epoxide of aralkyl type phenol resin such as phenol / aralkyl resin, naphthol / aralkyl resin, trimethylolpropane type epoxy resin, terpene modified epoxy resin, peroxy acid such as peracetic acid Examples thereof include linear aliphatic epoxy resins and alicyclic epoxy resins obtained by oxidation with, and these may be used alone or in combination of two or more kinds.

Among them, the biphenyl type epoxy resin represented by the following general formula (I) is preferable from the viewpoints of fluidity and reflow resistance.

[0019]

[Chemical 9] (Here, R ^{1 to} R ⁴ are selected from a hydrogen atom and a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and all may be the same or different. N is 0 to 3). An integer is shown.) Examples of the biphenyl-type epoxy resin represented by the general formula (I) include 4,4′-bis (2,3-epoxypropoxy) biphenyl or 4,4′-bis (2,3).
-Epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenyl-based epoxy resin, epichlorohydrin and 4,4'-biphenol or 4,4'-
Examples thereof include epoxy resins obtained by reacting with (3,3 ′, 5,5′-tetramethyl) biphenol. Among them, 4,4'-bis (2,3-epoxypropoxy)
An epoxy resin containing -3,3 ', 5,5'-tetramethylbiphenyl as a main component is preferable. When this biphenyl type epoxy resin is used, its content is preferably 30% by weight or more, more preferably 50% by weight or more, more preferably 60% by weight or more based on the total amount of the epoxy resin in order to exert its performance. Is more preferable.

From the viewpoint of fluidity and flame retardancy, a bisphenol F type epoxy resin represented by the following general formula (II) is preferable.

[0021]

[Chemical 10] All of R ^{1 to} R ⁸ in the above formula (II) may be the same or different and have 1 to 10 carbon atoms such as hydrogen atom, methyl group, ethyl group, propyl group, butyl group, isopropyl group and isobutyl group. An alkyl group, a methoxy group, an ethoxy group, a propoxy group, a butoxy group and the like, an alkoxy group having 1 to 10 carbon atoms, a phenyl group, a tolyl group, an aryl group having 6 to 10 carbon atoms such as a xylyl group, and a benzyl group, It is selected from an aralkyl group having 6 to 10 carbon atoms such as a phenethyl group, and among them, a hydrogen atom and a methyl group are preferable. n shows the integer of 0-3.

Examples of the bisphenol F type epoxy resin represented by the above general formula (II) include R ¹ and
R ^{3, R 6} and ^{R 8} is a methyl ^{group, R 2, R 4, R} 5 and ^{R 7} are hydrogen atom, YSL composed mainly of n = 0
V-80XY (trade name, manufactured by Nippon Steel Chemical Co., Ltd.) is commercially available. When this bisphenol F type epoxy resin is used, its content is preferably 30% by weight or more, and more preferably 50% by weight or more based on the total amount of the epoxy resin in order to exert its performance.

From the viewpoint of fluidity and curability, the stilbene type epoxy resin represented by the following general formula (III) is preferable.

[0024]

[Chemical 11] (Here, R ^{1 to} R ⁸ are a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, and 6 to 6 carbon atoms.
It is selected from an aryl group having 10 and an aralkyl group having 6 to 10 carbon atoms, all of which may be the same or different. n is 0
Indicates an integer of ˜3. As the stilbene type epoxy resin represented by the general formula (III), for example, R ¹ , R ³ , R ⁶ and R ⁸ are methyl groups, and R ² , R ⁴ , R ⁵ and R ⁷ are hydrogen atoms. Yes, ESLV-210 (trade name manufactured by Sumitomo Chemical Co., Ltd.) containing n = 0 as a main component is commercially available. When this stilbene type epoxy resin is used, its content is preferably 30% by weight or more based on the total amount of the epoxy resin in order to exert its performance.
It is more preferably at least wt%.

From the viewpoint of reflow resistance, the following general formula (V
The sulfur atom-containing epoxy resin represented by II) is preferable.

[0026]

[Chemical 12] All of R ^{1 to} R ⁸ in the above formula (VII) may be the same or different, and have 1 to 10 carbon atoms such as hydrogen atom, methyl group, ethyl group, propyl group, butyl group, isopropyl group, isobutyl group and the like. Alkyl group, methoxy group, ethoxy group,
Propoxy group, butoxy group, etc., C1-C10 alkoxyl group, phenyl group, tolyl group, xylyl group, etc., C6-C10 aryl group, and benzyl group, phenethyl group, etc., C6-C10 It is selected from aralkyl groups, and among them, hydrogen atom, methyl group and isobutyl group are preferable. n shows the integer of 0-3.

The sulfur atom-containing epoxy resin represented by the above general formula (VII) is, for example, t-butyl group for R ³ and R ⁶ , methyl group for R ² and R ⁷ , R ¹ , R ⁴ ,
Each of R ⁵ and R ⁸ is a hydrogen atom, and YSLV-120TE (trade name, manufactured by Nippon Steel Chemical Co., Ltd.) containing n = 0 as a main component is commercially available. When this sulfur atom-containing epoxy resin is used, its compounding amount is 30 with respect to the total amount of the epoxy resin in order to exert its performance.
It is preferably at least 50% by weight, more preferably at least 50% by weight.

In order to achieve the effect of the present invention, the biphenyl type epoxy resin represented by the general formula (I), the bisphenol F type epoxy resin represented by the general formula (II) and the general formula (III) are used. It is more preferable to use at least one of the stilbene type epoxy resins shown, and any two or all of them may be used in combination. When two or more kinds are used in combination, the compounding amount thereof is preferably 60% by weight or more, more preferably 80% by weight or more, based on the total amount of the epoxy resin.

From the viewpoint of fluidity, the melt viscosity of the epoxy resin (A) used in the present invention at 150 ° C. is preferably 2 poises or less, more preferably 1 poise or less, still more preferably 0.5 poise or less. Here, the melt viscosity refers to a viscosity measured by an ICI cone plate viscometer.

The (B) curing agent used in the present invention is generally used in epoxy resin molding materials for encapsulation and is not particularly limited. For example, phenol, cresol, resorcin, catechol, bisphenol A, bisphenol. F, phenylphenol, phenol such as aminophenol and / or α-naphthol,
Resins, phenols and / or naphthols obtained by condensing or co-condensing naphthols such as β-naphthol and dihydroxynaphthalene with compounds having an aldehyde group such as formaldehyde and dimethoxyparaxylene or bis (methoxy) Examples thereof include aralkyl type phenol resins such as phenol / aralkyl resins and naphthol / aralkyl resins synthesized from methyl) biphenyl, and these may be used alone or in combination of two or more kinds.

Among them, from the viewpoint of reflow resistance, a phenol / aralkyl resin represented by the following general formula (IV) is preferable, and R is a hydrogen atom, and a phenol / aralkyl resin having an average value of n of 0 to 8 is preferable. More preferable examples include p-xylylene type zylok and m-xylylene type zylok. When the phenol / aralkyl resin is used, its content is preferably 30% by weight or more, more preferably 50% by weight or more, based on the total amount of the curing agent in order to exert its performance.
It is more preferably at least wt%.

[0032]

[Chemical 13] (Here, R is selected from a hydrogen atom and a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and n is an integer of 0 to 10.) From the viewpoint of flame retardancy, the following general The biphenyl type phenol resin represented by the formula (V) is preferable.

[0033]

[Chemical 14] All of R ^{1 to} R ⁹ in the above formula (IV) may be the same or different and have 1 to 10 carbon atoms such as hydrogen atom, methyl group, ethyl group, propyl group, butyl group, isopropyl group and isobutyl group. Alkyl group, methoxy group, ethoxy group,
Propoxy group, butoxy group, etc., C1-C10 alkoxyl group, phenyl group, tolyl group, xylyl group, etc., C6-C10 aryl group, and benzyl group, phenethyl group, etc., C6-C10 It is selected from an aralkyl group, and among them, a hydrogen atom and a methyl group are preferable. n shows the integer of 0-10.

Examples of the biphenyl type phenol resin represented by the above general formula (V) include compounds in which R ^{1 to} R ⁹ are all hydrogen atoms, and in particular, n is 1 or more from the viewpoint of melt viscosity. A mixture of condensates containing 50% by weight or more of the condensate is preferable. Such compounds include:
MEH-7851 (trade name, manufactured by Meiwa Kasei Co., Ltd.) is commercially available. When this biphenyl type phenol resin is used, its content is preferably 30% by weight or more, and more preferably 50% by weight or more based on the total amount of the curing agent in order to exert its performance.

The phenol / aralkyl resin represented by the above general formula (IV) and the biphenyl type phenol resin represented by the above general formula (V) may be used in combination. When both are used in combination, the total content thereof is preferably 60% by weight or more, more preferably 80% by weight or more, based on the total amount of the curing agent.

The melt viscosity at 150 ° C. of the (B) curing agent used in the present invention is preferably 2 poises or less, more preferably 1 poise or less, from the viewpoint of fluidity. Here, the melt viscosity refers to ICI viscosity.

The equivalent ratio of (A) epoxy resin to (B) curing agent, that is, the ratio of the number of epoxy groups in the epoxy resin / the number of hydroxyl groups in the curing agent is not particularly limited, but each unreacted component is In order to keep it low, it is preferably set in the range of 0.5 to 2, and more preferably set in the range of 0.6 to 1.3. 0.8 to obtain an epoxy resin molding material for sealing, which has excellent moldability and reflow resistance
More preferably, it is set in the range of 1.2.

The silane coupling agent having a secondary amino group (C) used in the present invention is not particularly limited as long as it is a silane compound having a secondary amino group in the molecule.
For example, γ-anilinopropyltrimethoxysilane,
γ-anilinopropyltriethoxysilane, γ-anilinopropylmethyldimethoxysilane, γ-anilinopropylmethyldiethoxysilane, γ-anilinopropylethyldiethoxysilane, γ-anilinopropylethyldimethoxysilane, γ-anis Rinomethyltrimethoxysilane, γ-anilinomethyltriethoxysilane, γ-anilinomethylmethyldimethoxysilane, γ-anilinomethylmethyldiethoxysilane, γ-anilinomethylethyldiethoxysilane, γ-anilinomethylethyl Dimethoxysilane, N- (p-methoxyphenyl) -γ-aminopropyltrimethoxysilane, N- (p-methoxyphenyl) -γ-aminopropyltriethoxysilane, N-
(P-Methoxyphenyl) -γ-aminopropylmethyldimethoxysilane, N- (p-methoxyphenyl) -γ
-Aminopropylmethyldiethoxysilane, N- (p-
Methoxyphenyl) -γ-aminopropylethyldiethoxysilane, N- (p-methoxyphenyl) -γ-aminopropylethyldimethoxysilane, γ- (N-methyl) aminopropyltrimethoxysilane, γ- (N-ethyl) Aminopropyltrimethoxysilane, γ- (N-
Butyl) aminopropyltrimethoxysilane, γ- (N
-Benzyl) aminopropyltrimethoxysilane, γ-
(N-methyl) aminopropyltriethoxysilane, γ
-(N-ethyl) aminopropyltriethoxysilane,
γ- (N-butyl) aminopropyltriethoxysilane, γ- (N-benzyl) aminopropyltriethoxysilane, γ- (N-methyl) aminopropylmethyldimethoxysilane, γ- (N-ethyl) aminopropylmethyldimethoxysilane Silane, γ- (N-butyl) aminopropylmethyldimethoxysilane, γ- (N-benzyl) aminopropylmethyldimethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, γ
-(Β-aminoethyl) aminopropyltrimethoxysilane, N-β- (N-vinylbenzylaminoethyl)-
γ-aminopropyltrimethoxysilane and the like can be mentioned. Among them, the aminosilane coupling agent represented by the following general formula (VI) is preferable from the viewpoint of obtaining fluidity and particularly good disc flow.

[0039]

[Chemical 15] (Here, R ¹ is selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and an alkoxy group having 1 to ² carbon atoms, R ² is selected from an alkyl group having 1 to 6 carbon atoms and a phenyl group, and R
³ represents a methyl group or an ethyl group, n represents an integer of 1 to 6, and m represents an integer of 1 to 3. ) Examples of the aminosilane coupling agent represented by the above general formula (VI) include γ-anilinopropyltrimethoxysilane, γ-anilinopropyltriethoxysilane, γ-anilinopropylmethyldimethoxysilane, and γ.
-Anilinopropylmethyldiethoxysilane, γ-anilinopropylethyldiethoxysilane, γ-anilinopropylethyldimethoxysilane, γ-anilinomethyltrimethoxysilane, γ-anilinomethyltriethoxysilane, γ-anilino Methylmethyldimethoxysilane, γ
-Anilinomethylmethyldiethoxysilane, γ-anilinomethylethyldiethoxysilane, γ-anilinomethylethyldimethoxysilane, N- (p-methoxyphenyl) -γ-aminopropyltrimethoxysilane, N-
(P-methoxyphenyl) -γ-aminopropyltriethoxysilane, N- (p-methoxyphenyl) -γ-aminopropylmethyldimethoxysilane, N- (p-methoxyphenyl) -γ-aminopropylmethyldiethoxysilane, Examples thereof include N- (p-methoxyphenyl) -γ-aminopropylethyldiethoxysilane and N- (p-methoxyphenyl) -γ-aminopropylethyldimethoxysilane. Particularly preferred is γ-anilinopropyltrimethoxysilane.

When the (C) silane coupling agent having a secondary amino group is blended with the epoxy resin molding material for sealing, the adhesiveness between the essential component and the optional component such as the filler is improved, and as a result, The action and effect that the functions of the essential component and the optional component are suitably exerted can be obtained. Among the optional components, when the silane coupling agent (C) having a secondary amino group is used, the (E) inorganic filler is particularly preferably used from the viewpoint that the effect of the inorganic filler (E) described below is suitably exhibited. Is preferably added.

The compounding amount of the silane coupling agent (C) having a secondary amino group is preferably 0.037 to 4.75% by weight based on the epoxy resin molding material for sealing, and 0.088 to More preferably, it is 2.3% by weight. If it is less than 0.037% by weight, the flow of the disc is reduced,
Molding defects such as wire flow and voids tend to occur, and the adhesiveness to the frame tends to decrease.
If it exceeds 4.75% by weight, the moldability of the package tends to decrease.

The amount of the silane coupling agent having a secondary amino group (C) is, when the inorganic filler (E), which will be described later, is added, is in the range of 0.05 to the inorganic filler (E).
5% by weight is preferred, 0.1-2.5% by weight
Is more preferable. The reason for defining the blending amount is the same as above.

The phosphoric acid ester (D) used in the present invention is not particularly limited as long as it is an ester compound of phosphoric acid and an alcohol compound or a phenol compound. For example, trimethyl phosphate, triethyl phosphate, triphenyl phosphate, tricresyl phosphate. ,
Examples thereof include trixylenyl phosphate, cresyl diphenyl phosphate, xylenyl diphenyl phosphate, tris (2,6-dimethylphenyl) phosphate, and aromatic condensed phosphoric acid ester. Among them, the aromatic condensed phosphoric acid ester represented by the following general formula (X) is preferable from the viewpoint of hydrolysis resistance.

[0044]

[Chemical 16] Examples of the phosphate ester (D) of the above formula (X) include phosphate esters represented by the following structural formulas (XI) to (XV).

[0045]

[Chemical 17] The addition amount of these phosphoric acid ester (D) is 0.2 to 3.0 in terms of the amount of phosphorus atom with respect to all the other components except the filler.
It is preferably within the range of mass%. If the amount is less than 0.2% by mass, the disc flow will be reduced, and wire defects, voids and other molding defects will easily occur. Further, since it has a flame retardant effect, when it is also used as a flame retardant, the flame retardant effect tends to be low. If it exceeds 3.0% by mass, moldability and moisture resistance may be deteriorated, or these phosphate esters may exude during molding, which may impair the appearance.

In the present invention, in addition to the component (A), the component (B), and the component (C) or (D), the component (E) is further added.
It is preferable to add an inorganic filler. The (E) inorganic filler used in the present invention is added to the epoxy resin molding material for sealing for hygroscopicity, reduction of linear expansion coefficient, improvement of thermal conductivity and improvement of strength, and for example, fused silica. , Crystalline silica, alumina, zircon, calcium silicate, calcium carbonate, potassium titanate, silicon carbide,
Examples thereof include powders of silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite, titania, etc., or spherical beads of these, and glass fibers. Furthermore, as the inorganic filler having a flame retardant effect, aluminum hydroxide,
Examples thereof include magnesium hydroxide, zinc borate, zinc molybdate, and the like. These inorganic fillers may be used alone or in combination of two or more. Among them, fused silica is preferable from the viewpoint of reducing the coefficient of linear expansion, alumina is preferable from the viewpoint of high thermal conductivity, and the shape of the inorganic filler is preferably spherical from the viewpoints of fluidity at the time of molding and mold abrasion.

When the inorganic filler (E) is used, its content is preferably 75% by weight or more based on the epoxy resin molding material for sealing from the viewpoint of reflow resistance. From the viewpoint of reflow resistance, fluidity, moldability and strength improvement,
95% by weight is more preferable, and 88 to 92% by weight is further preferable.

When the inorganic filler (E) is used, it is preferable to add a coupling agent to the encapsulating epoxy resin molding material of the present invention in order to enhance the adhesiveness between the resin component and the filler. . As the coupling agent, a silane coupling agent having a secondary amino group (C) is preferable, but other coupling agents can be used in combination as needed within a range in which the effects of the present invention can be achieved. Other coupling agents that can be used in combination with the (C) silane coupling agent having a secondary amino group are those commonly used in epoxy resin molding materials for sealing and are not particularly limited,
For example, a silane compound having a primary amino group and / or a tertiary amino group, epoxysilane, mercaptosilane,
Examples thereof include various silane compounds such as alkylsilane, ureidosilane, and vinylsilane, titanium compounds, aluminum chelates, aluminum / zirconium compounds, and the like. Examples of these are vinyltrichlorosilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, γ-methacryloxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycine. Sidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-
Aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropylmethyldiethoxysilane, γ- (N, N-dimethyl) aminopropyltrimethoxysilane, γ- (N , N-diethyl) aminopropyltrimethoxysilane, γ- (N, N-dibutyl) aminopropyltrimethoxysilane, γ- (N-methyl) anilinopropyltrimethoxysilane, γ- (N-ethyl) anilinopropyl Trimethoxysilane, γ- (N,
N-dimethyl) aminopropyltriethoxysilane, γ
-(N, N-diethyl) aminopropyltriethoxysilane, γ- (N, N-dibutyl) aminopropyltriethoxysilane, γ- (N-methyl) anilinopropyltriethoxysilane, γ- (N-ethyl) Anilinopropyltriethoxysilane, γ- (N, N-dimethyl) aminopropylmethyldimethoxysilane, γ- (N, N-diethyl) aminopropylmethyldimethoxysilane, γ-
(N, N-dibutyl) aminopropylmethyldimethoxysilane, γ- (N-methyl) anilinopropylmethyldimethoxysilane, γ- (N-ethyl) anilinopropylmethyldimethoxysilane, N- (trimethoxysilylpropyl) ethylenediamine , N- (dimethoxymethylsilylisopropyl) ethylenediamine, methyltrimethoxysilane, dimethyldimethoxysilane, methyltriethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, vinyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, etc. Silane coupling agent, isopropyl triisostearoyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate, isopropyl tri (N-aminoethyl-amido) Ethyl) titanate, tetraoctyl bis (ditridecyl phosphite) titanate, tetra (2,2-diallyloxymethyl-1-butyl) bis (ditridecyl) phosphite titanate, bis (dioctyl pyrophosphate) oxyacetate titanate, bis (dioctyl) Pyrophosphate) ethylene titanate, isopropyl trioctanoyl titanate, isopropyl dimethacryl isostearoyl titanate, isopropyl tridodecylbenzene sulfonyl titanate, isopropyl isostearoyl diacryl titanate, isopropyl tri (dioctyl phosphate) titanate, isopropyl tricumyl phenyl titanate, tetraisopropyl bis (Dioctyl phosphite) titanate-based coupling agents such as titanate And the like. These may be used alone or in combination of two or more.

When these other coupling agents are used, the compounding amount of the silane coupling agent (C) having a secondary amino group is 30% by weight or more based on the total amount of the coupling agent in order to exert its performance. Preferably 5
It is more preferably 0% by weight or more.

The total amount of the coupling agent containing the silane coupling agent (C) having a secondary amino group is 0.037 to 4.75 with respect to the epoxy resin molding material for sealing.
The content is preferably wt%, and more preferably 0.088 to 2.3 wt%. If it is less than 0.037% by mass, the adhesiveness to the frame tends to be low, and it is 4.75.
When the content is more than mass%, the moldability of the package tends to be deteriorated.

The compounding amount of the above coupling agent is
When the (E) inorganic filler is added, the amount is preferably 0.05 to 5% by weight with respect to the (E) inorganic filler,
It is more preferably ˜2.5 wt%. The reason for defining the blending amount is the same as above.

From the viewpoint of curability, in the present invention, it is preferable to further add (F) a curing accelerator. The (F) curing accelerator used in the present invention is not particularly limited as long as it is a compound generally used for epoxy resin molding materials for sealing, and for example, 1,8-diaza-bicyclo (5,4,4). 0) Cycloamidines such as undecene-7,1,5-diaza-bicyclo (4,3,0) nonene, 5,6-dibutylamino-1,8-diaza-bicyclo (5,4,0) undecene-7 Compounds and these compounds with maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-
Dimethoxy-5-methyl-1,4-benzoquinone, 2,
3-dimethoxy-1,4-benzoquinone, phenyl-
A compound having an intramolecular polarization formed by adding a quinone compound such as 1,4-benzoquinone or the like, a compound having a π bond such as diazophenylmethane or a phenol resin, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethyl) Aminomethyl) phenol and other tertiary amines and their derivatives, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-
Imidazoles such as 4-methylimidazole and their derivatives, tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris (4-methylphenyl) phosphine, diphenylphosphine, phenylphosphine and other organic phosphines and their phosphines are anhydrous. Maleic acid, a quinone compound, diazophenylmethane, a phosphorus compound having an intramolecular polarization formed by adding a compound having a π bond such as phenol resin, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, 2-ethyl -4-methylimidazole tetraphenylborate,
Examples thereof include tetraphenylboron salts such as N-methylmorpholine tetraphenylborate and derivatives thereof, and these may be used alone or in combination of two or more kinds. Of these, an adduct of an organic phosphine and a quinone compound is preferable from the viewpoint of moldability and reflow resistance.

The compounding amount of the curing accelerator is not particularly limited as long as the curing acceleration effect is achieved, but is preferably 0.005 to 2% by weight based on the epoxy resin molding material for sealing. , And more preferably 0.01 to 0.5% by weight
Is. If it is less than 0.005% by weight, the curability in a short time tends to be inferior, and if it exceeds 2% by weight, the curing rate tends to be too fast, and it tends to be difficult to obtain a good molded product.

The encapsulating epoxy resin molding material of the present invention is
The disc flow is preferably 80 mm or more from the viewpoint of suppressing the occurrence of molding defects such as wire flow and voids. Here, the disc flow is an index showing the fluidity under a load of 78 N, and 5 g of the epoxy resin molding material for sealing is used at a mold temperature of 180 ° C., a load of 78 N, and a curing time of 90.
The average value of the measured values of the major axis and the minor axis of a molded product molded under the condition of seconds.

By using a sealing epoxy resin molding material having a disk flow of 80 mm or more, wires can be used even in a semiconductor device in which a semiconductor chip is arranged on a thin board, a large number of pins, a long wire, a narrow pad pitch or a mounting substrate. It is possible to reduce the occurrence of molding defects such as flow and voids.

The encapsulating epoxy resin molding material of the present invention includes (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) phosphorus as essential components. An epoxy resin molding material for encapsulation which contains an acid ester and optionally (E) an inorganic filler and (F) a curing accelerator is included.

The encapsulating epoxy resin molding material of the present invention is preferably used in a semiconductor device having one or more of the following constitutions (a) to (f). (A) At least one of the thicknesses of the sealing material on the upper surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more

The encapsulating epoxy resin molding material of the present invention is
Among the semiconductor devices having one or more of the configurations (a) to (f), the semiconductor device having the following configuration is particularly preferably used. From the viewpoint of void reduction, it is preferably used in a semiconductor device having the configuration (a) or (e), and more preferably used in a semiconductor device having the configuration (a). It is more preferably used for a semiconductor device provided. From the viewpoint of wire flow reduction,
It is preferably used for a semiconductor device having the configuration (b), (c) or (d), and more preferably used by a semiconductor device having the configuration (b), the configurations (b) and (c), or the configuration (b).
And (d) are more preferably used for the semiconductor device, and particularly preferably used for the semiconductor device having the configurations (b), (c) and (d). From the viewpoint of reducing voids and wire flow, configurations (a) and (b), configuration (a)
And (c), configurations (a) and (d), configurations (a) and (f), or configurations (c) and (e), which are preferably used in semiconductor devices, and configurations (a) and (b). And (d), or preferably used in a semiconductor device having the configurations (c), (e) and (f), the configurations (a), (b), (d) and (f), or the configuration (a). , (B), (c) and (d) are more suitably used for the semiconductor device.

In a first preferred embodiment of the encapsulating epoxy resin molding material according to the present invention, (A) epoxy resin, (B) curing agent, (C) silane coupling agent having a secondary amino group, and By adjusting the combination and the amount of the (E) inorganic filler as an optional component and other components used as other additives, the disc flow can be adjusted to 80%.
An epoxy resin molding material for encapsulation having a size of at least mm can be obtained. When (A) epoxy resin, (B) curing agent and (C) silane coupling agent having a secondary amino group are selected and (E) inorganic filler is used, the blending amount thereof is particularly important.

In a second preferred embodiment of the encapsulating epoxy resin molding material according to the present invention, (A) an epoxy resin, (B) a curing agent, (C) a silane coupling agent having a secondary amino group, ( By adjusting the combination and blending amount of E) the inorganic filler and (F) the curing accelerator, a sealing epoxy resin molding material having a disc flow of 80 mm or more can be obtained. (A) Epoxy resin, (B)
It is particularly important to select a curing agent, (C) a silane coupling agent having a secondary amino group, and (F) a curing accelerator, and (E) an inorganic filler content.

In a third preferred embodiment of the encapsulating epoxy resin molding material according to the present invention, (A) epoxy resin, (B) curing agent, (D) phosphate ester, (E) inorganic filler, ( F) An epoxy resin molding material for encapsulation having a disk flow of 80 mm or more can be obtained by adjusting the combination and the blending amount of the components used as the curing accelerator and other additives. (A) Epoxy resin,
The selection of the (B) curing agent, the (D) phosphate ester, and the (F) curing accelerator and the blending amount of the (E) inorganic filler are particularly important, and the blending amounts are as described above.

Examples of the encapsulating epoxy resin molding material of the present invention include brominated epoxy resin, antimony trioxide, phosphoric acid ester, phosphorus compounds such as red phosphorus, melamine, melamine cyanurate, melamine modified phenol resin, guanamine modified phenol. If necessary, a conventionally known flame retardant such as a nitrogen-containing compound such as a resin, a phosphorus / nitrogen-containing compound such as cyclophosphazene, a metal compound such as zinc oxide, iron oxide, molybdenum oxide, or ferrocene can be added.

Further, an anion exchanger can be added to the epoxy resin molding material for encapsulation of the present invention from the viewpoint of improving the moisture resistance and high temperature storage characteristics of semiconductor elements such as ICs. There is no particular limitation on the anion exchanger, and conventionally known ones can be used. These can be used alone or in combination of two or more. Among them, hydrotalcite represented by the following composition formula (VIII) is preferable. _{Mg 1-X Al X (OH} ) 2 (CO 3) X / 2 · mH 2 O ... (VIII) (0 <X ≦ 0.5, m is a positive number)

Further, in the encapsulating epoxy resin molding material of the present invention, as other additives, a releasing agent such as higher fatty acid, higher fatty acid metal salt, ester wax, polyolefin wax, polyethylene or polyethylene oxide,
A coloring agent such as carbon black, a stress relieving agent such as silicone oil or silicone rubber powder, and the like can be added as necessary.

The encapsulating epoxy resin molding material of the present invention is
As long as various raw materials can be uniformly dispersed and mixed, it can be prepared by any method, but as a general method,
After thoroughly mixing the raw materials in a prescribed amount with a mixer, etc., after mixing or melt-kneading with a mixing roll, an extruder, a ladle machine, a planetary mixer, etc., cooling, defoaming and pulverizing as necessary, etc. Can be mentioned. Further, if necessary, the tablet may be formed into a tablet having a size and weight suitable for the molding conditions.

The low-pressure transfer molding method is the most general method for sealing a semiconductor device by using the sealing epoxy resin molding material of the present invention as a sealing material. And so on. A dispensing method, a casting method, a printing method or the like may be used.

In the semiconductor device of the present invention, (A) epoxy resin, (B) curing agent, and (C) 2 are essential components.
An encapsulating epoxy resin molding material containing a silane coupling agent having a primary amino group or (D) phosphoric ester, and optionally containing (E) an inorganic filler or (F) a curing accelerator. Used as a lead frame, pre-wired tape carrier, wiring board, glass, silicon wafer and other supporting members and mounting substrates, active elements such as semiconductor chips, transistors, diodes, thyristors, passive elements such as capacitors, resistors and coils. A general semiconductor device having an element such as an element mounted therein may be mentioned.

Here, the mounting substrate is not particularly limited, and for example, an organic substrate, an organic film, a ceramic substrate, an interposer substrate such as a glass substrate, a glass substrate for liquid crystal, a substrate for MCM (Multi Chip Module),
Examples thereof include hybrid IC substrates.

The semiconductor device of the present invention preferably further comprises one or more of the following constitutions (a) to (f). (A) At least one of the thicknesses of the sealing material on the upper surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less. (E) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less. (F) The area of the semiconductor chip is 25 mm ² or more.

Among the semiconductor devices having one or more of the above structures (a) to (f), the semiconductor device having the following structure is particularly preferable from the viewpoint that the effect of the present invention is great.
From the viewpoint of a large effect of reducing voids, a semiconductor device having the configuration (a) or (e) or a semiconductor device having the configuration (a) is preferable, and a semiconductor device having the configuration (a) and one or more other configurations is preferable. More preferable. From the viewpoint that the wire flow reduction effect is large, a semiconductor device having the configuration (b), (c), or (d) is preferable, a semiconductor device having the configuration (b) is more preferable, and the configurations (b) and (c). ), Or a semiconductor device having the configurations (b) and (d) is more preferable, and a semiconductor device having the configurations (b), (c), and (d) is particularly preferable.

From the viewpoint that the effect of reducing voids and wire flow is great, the configurations (a) and (b), the configurations (a) and (c), the configurations (a) and (d), and the configuration (a).
And (f), or a semiconductor device including the configurations (c) and (e) is preferable, and a semiconductor device including the configurations (a), (b) and (d), or the configurations (c), (e) and (f). A device is more preferred, comprising configurations (a), (b), (d) and (f),
Alternatively, a semiconductor device having the configurations (a), (b), (c) and (d) is more preferable.

In such a semiconductor device, for example, an element such as a semiconductor chip is fixed on a lead frame (island, tab), and a terminal portion of the element such as a bonding pad and a lead portion are connected by wire bonding or bumps. Thereafter, the epoxy resin molding material for sealing of the present invention is used for sealing by transfer molding or the like.
al Inline Package), PLCC (Plastic Leaded Chip)
Carrier), QFP (Quad Flat Package), SOP (S
mall Outline Package), SOJ (Small Outline J-le)
ad package), TSOP (Thin Small Outline Packag)
e), resin-sealed IC such as TQFP (Thin Quad Flat Package), TCP (Tape Carrier Package) in which a semiconductor chip lead-bonded to a tape carrier is sealed with the epoxy resin molding material of the present invention, wiring COB (Chip On Board), COG (Chip) in which a semiconductor chip connected to a wiring formed on a plate or glass by wire bonding, flip chip bonding, solder, etc. is encapsulated with the epoxy resin molding material for encapsulation of the present invention. On Glass)
Such as a semiconductor device mounted on a bare chip, a wiring formed on a wiring board or glass, a semiconductor chip connected by wire bonding, flip chip bonding, soldering, or the like,
Active elements such as transistors, diodes, thyristors and / or passive elements such as capacitors, resistors and coils,
A semiconductor IC is mounted on an interposer substrate having terminals for connecting a hybrid IC and MCM (Multi Chip Module) mother board sealed with the epoxy resin molding material of the present invention, and the semiconductor chip and the interposer substrate are bumped or wire-bonded. BGA (Ball Grid Arra) in which the semiconductor chip mounting side is sealed with the sealing epoxy resin molding material of the present invention after connecting the wiring formed in
y), CSP (Chip Size Package), MCP (Multi Ch
ip Package) and so on. In addition, even if these semiconductor devices are stacked type packages in which two or more elements are mounted on a mounting substrate,
It may be a batch mold type package in which one or more elements are sealed at once with a sealing epoxy resin molding material.

FIG. 1 shows an example of the semiconductor device of the present invention, but the semiconductor device of the present invention is not limited to this. Figure 1 shows die bond agent 2 on island (tab) 1.
After fixing the semiconductor chip 3 by using, and connecting the terminal portion (bonding pad) 7 of the semiconductor chip 3 and the lead pin 4 with the wire 5 (wire bonding), the epoxy resin molding material (sealing material) 6 for sealing is used. QFP sealed with
1A is a cross-sectional view, FIG. 1B is a top view (partially transparent view), and FIG. 1C is an enlarged top view (partially) of the terminal portion (bonding pad) 7 on the semiconductor chip 3. A perspective view) is shown.

In the semiconductor device of the present invention shown in FIG. 1, at least one of the thickness a of the sealing material 6 on the upper surface of the semiconductor chip and the thickness b of the sealing material 6 on the back surface of the semiconductor chip is 0.7 m.
It is preferable that the semiconductor device is a thin semiconductor device having a thickness of 0.
It may be 5 mm or less or 0.3 mm or less. The package thickness (total thickness of the semiconductor device) c is preferably 2.0 mm or less, more preferably 1.5 mm or less, and may be 1.0 mm or less.

[0075] Preferably the area of the semiconductor chip d is 25 mm ² or more, even 50 mm ² or more, 80
It may be mm ² or more. The number of lead pins 4 is preferably a multi-pin type semiconductor device having 80 or more pins,
The number of pins may be 100 pins or more, or 200 pins or more. Wire 5 that connects the semiconductor chip and the lead pin
The length is preferably 2 mm or more, and may be 3 mm or more or 5 mm or more. The pitch e between the bonding pads on the semiconductor chip is preferably 90 μm or less, and even if it is 80 μm or less, 6
It may be 0 μm or less.

3 and 5 further show an example of the semiconductor device of the present invention, the semiconductor device of the present invention is not limited to this. In addition, those having the same functions as those described in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 3, the semiconductor chip 3 is fixed on the insulating base substrate 8 using the die bonding agent 2.
Shows a BGA in which the terminal portion (bonding pad) of (1) and the terminal portion on the wiring board are connected (wire bonding) with a wire 5 and then sealed using an epoxy resin molding material (sealing material) 6 for sealing. 3A is a sectional view, FIG. 3B is a partially transparent top view, and FIG. 3C is an enlarged view of a bonding pad portion. In FIG. 3, 9 indicates a solder ball.

In the semiconductor device of the present invention shown in FIG. 3, the package thickness a is preferably 2 mm or less,
It may be 1.5 mm or less or 1.0 mm or less. Preferably the area d of the semiconductor chip is 25 mm ² or more, even 50 mm ² or more, 80 mm ²
It may be more than. The length of the wire 5 connecting the semiconductor chip and the lead pin is preferably 2 mm or more, and may be 3 mm or more or 5 mm or more. The pitch e between the bonding pads on the semiconductor chip is preferably 90 μm or less, and may be 80 μm or less or 60 μm or less.

FIG. 5 shows a collective mold type stacked type B.
GA is shown, (a) is a top view (partially transparent view), and (b) is a partially enlarged sectional view. In FIG. 5, 9 indicates a solder ball. The semiconductor device of the present invention shown in FIG. 5 needs to be a semiconductor device having a package thickness a of 2 mm or less, and even if the package thickness is 1.5 mm or less, 1.0
It may be less than or equal to mm.

By encapsulating with the epoxy resin molding material for encapsulating a semiconductor device of the present invention, even in a thin semiconductor device having the encapsulating material thickness, a semiconductor having the encapsulating material thickness and the semiconductor chip area is obtained. In the device as well, in the semiconductor device having the number of pins, the wire length and the pad pitch described above, it is possible to reduce the occurrence of defective wire such as wire flow and voids.

[0081]

EXAMPLES The present invention will now be described with reference to examples, but the scope of the present invention is not limited to these examples.

Example (I-1 to I-5) Comparative Example (I-1)
~ I-15) (A-I) Preparation of epoxy resin molding material for sealing Epoxy equivalent as epoxy resin 196, melting point 106
Melt viscosity (ICI viscosity) at ℃ and 150 ℃ is 0.1
Poise biphenyl type epoxy resin (trade name Epicoat YX-4000H manufactured by Yuka Shell Epoxy Co., Ltd.), epoxy equivalent 186, melting point 75 ° C., bisphenol F having a melt viscosity (ICI viscosity) of 150 poises at 150 ° C.
Type epoxy resin (trade name YSLV manufactured by Nippon Steel Chemical Co., Ltd.
-80XY), epoxy equivalent 210, melting point 120 ° C, 1
Melt viscosity at 50 ° C. (ICI viscosity) is 0.1 poise stilbene type epoxy resin (Sumitomo Chemical Co., Ltd. trade name ESLV-210), epoxy equivalent 195, softening point 65 ° C., melt viscosity at 150 ° C. (ICI viscosity). ) Is 2.0 poise, o-cresol novolac type epoxy resin (trade name ESCN-190 manufactured by Sumitomo Chemical Co., Ltd.)
And an epoxy equivalent of 375, a softening point of 80 ° C., a melt viscosity at 150 ° C. (ICI viscosity) of 1.3 poise, and a bromine content of 48% by weight of a bisphenol A type brominated epoxy resin (trade name ESB-400T manufactured by Sumitomo Chemical Co., Ltd.). ),
As a curing agent, softening point 70 ° C., hydroxyl equivalent 175, 150
Melt viscosity at 20 ° C (ICI viscosity) is 2.0 poise, phenol aralkyl resin (Mitsui Chemicals, Inc., trade name Milex XL-225), softening point 80 ° C, hydroxyl equivalent 199, melt viscosity at 150 ° C (ICI viscosity). Is 1.4 poise biphenyl type phenol resin (Meiwa Kasei Co., Ltd., trade name MEH-7851), softening point 80 ° C.,
Hydroxyl equivalent 106, melt viscosity at 150 ° C (ICI
Viscosity) 1.8 poise phenol novolac resin (trade name H-1 manufactured by Meiwa Kasei Co., Ltd.), triphenylphosphine as a curing accelerator, γ-anilinopropyltrimethoxysilane (secondary aminosilane) as a coupling agent, γ-aminopropyltrimethoxysilane (primary aminosilane), γ- (N-methyl) anilinopropyltrimethoxysilane (tertiary aminosilane) and γ-glycidoxypropyltrimethoxysilane (epoxysilane), as an inorganic filler Spherical fused silica having an average particle size of 17.5 μm and a specific surface area of 3.8 m ² / g, antimony trioxide as other additives, carnauba wax (manufactured by Celarica NODA), carbon black (trade name MA manufactured by Mitsubishi Chemical Corporation) -100) was blended in the parts by weight shown in Table 1, kneading temperature 80 ° C, kneading time Perform kneading at 0 min conditions, epoxy sealing resin molding material I-1 to I-1
0 (I-6 to I-10 are comparative examples) was manufactured.

[0083]

[Table 1] (Test Example 1) The prepared epoxy resin molding material for encapsulation (I
The characteristics of -1) to (I-10) were determined by the following tests. The results are shown in Table 2.

(1) Spiral flow Using a spiral flow measuring mold conforming to EMMI-1-66, an epoxy resin molding material for sealing is molded by a transfer molding machine at a mold temperature of 180 ° C. and a molding pressure of 6.9M.
Molded under the conditions of Pa and curing time of 90 seconds, flow distance (c
m) was calculated. (2) Disc flow 200 mm (W) x 200 mm (D) x 25 mm (H)
Upper mold and 200mm (W) × 200mm (D) × 15m
A sample (epoxy resin molding material for sealing) precisely weighed using a flat plate mold for disc flow measurement having a lower mold of m (H) 5
g on the center of the lower mold heated to 180 ° C, and after 5 seconds,
The upper mold heated to 180 ° C. is closed, compression molding is performed under the conditions of a load of 78 N and a curing time of 90 seconds, and the major axis (mm) and the minor axis (mm) of the molded product are measured with a caliper, and the average value (m
m) is the disc flow.

[Table 2] (B-I) Fabrication of Semiconductor Device Next, using the encapsulating epoxy resin molding materials I-1 to I-10, Examples I-1 to I-5 and Comparative Examples I-1 to I-.
Fifteen semiconductor devices were manufactured. The sealing with the epoxy resin molding material for sealing is performed by using a transfer molding machine under the conditions of a mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds, and then post-curing at 180 ° C. for 5 hours. It was done by doing. Epoxy resin molding material for sealing I-1
~ I-5, 10 mm x 10 mm x 0.4 mm
(Area 100 mm ² ), pitch between bonding pads 8
Equipped with a 0 μm test silicone chip, diameter 18
The outer diameter is 20 mm x 20 mm, the thickness of the encapsulating material on the upper surface of the semiconductor chip is 0.5 mm, and the thickness of the encapsulating material on the back surface of the semiconductor chip is 0.5 mm. , Total thickness of semiconductor device 1.5m
m, the number of lead pins was 100, and thin, multi-pin, long wire, and narrow pad pitch semiconductor devices of Examples I-1 to I-5 (100-pin LQFP) were manufactured. Example I using the epoxy resin molding materials I-6 to I-10 for sealing
Similarly to -1 to I-5, the semiconductor devices of Comparative Examples I-1 to I-5 (100-pin LQFP) having 100 lead pins, thin type, multi-pin, long wire, and narrow pad pitch.
Was produced. Further, the epoxy resin molding material for sealing I-1
To I-10, 4 mm × 4 mm × 0.4 mm (area 16 mm ² ), pitch between bonding pads 100 μ
18μ diameter with a m test silicone chip
m, length: 1.5 mm, wire-bonded with a gold wire, outer shape: 20 mm × 20 mm, thickness of encapsulant on top of semiconductor chip 1.1 mm, thickness of encapsulant on back of semiconductor chip 1 0.1 mm, total thickness of semiconductor device 2.7
mm, and the number of lead pins is 64. Comparative Examples I-6 to I-16
The semiconductor device (64-pin QFP-1H) was manufactured.

Test Example 2 Produced Examples I-1 to I-
The semiconductor devices of No. 5 and Comparative Examples I-1 to I-15 were evaluated by the following tests. The evaluation results are shown in Tables 3 and 4.

(1) Wire deformation amount (index of wire flow) Soft X-ray measuring device (PRO-TEST 100 manufactured by Softex Co., Ltd.)
Type), the amount of wire deformation was obtained by performing a transparent observation of the semiconductor device under the conditions of a voltage of 100 kV and a current of 1.5 mA, and the wire flow was evaluated. As shown in FIG. 2 or 4, the observation is performed from the direction perpendicular to the frame surface, and the shortest distance L for wire bonding (the terminal portion 7 of the semiconductor chip 3 and the bonding portion of the lead pin 4 or the terminal portion 10 on the wiring board is (Distance to connect) and maximum displacement X of wire 5
Was measured and X / L × 100 was taken as the wire deformation amount (%). (2) Amount of voids generated A perspective observation of the semiconductor device is performed in the same manner as in (1) above,
The presence / absence of voids having a diameter of 0.1 mm or more was observed and evaluated by the number of voided semiconductor devices / the number of test semiconductor devices.

[Table 3]

[Table 4] Comparative Example I-1 to (C) Sealing with a sealing epoxy resin molding material I-6 to I-10 containing neither a silane coupling agent having a secondary amino group nor a (D) phosphate ester
In the thin semiconductor device of I-5, a large number of pins, a long wire, and a narrow pad pitch, a wire defect (a large amount of wire deformation) and generation of a void, or a molding failure such as unmolding due to gelation occurs. . On the other hand, (A)
The epoxy resin molding materials I-1 to I-5 for sealing containing the epoxy resin, (B) curing agent and (C) silane coupling agent having a secondary amino group are excellent in fluidity and thus sealed. In the thin, multi-pin, long wire, and narrow pad pitch semiconductor devices of Examples I-1 to I-5, no wire flow was observed (the wire deformation amount was extremely small).
Excellent in moldability without generation of voids.

Sealing material thickness, wire length, number of lead pins,
In the semiconductor devices of Comparative Examples I-6 to I-15 in which the structure of the semiconductor device such as the pad pitch and the package thickness is out of the specified range of the present invention, the primary aminosilane is used instead of the silane coupling agent having the secondary amino group. No wire flow was observed in any of the comparative examples I-13 sealed with the sealing epoxy resin molding material I-8 containing a coupling agent, except that the molding was impossible due to gelation (wire deformation amount). Is extremely small), and voids do not occur, resulting in excellent moldability.

(Examples II-1 to II-10) (Comparative Examples II-1 to II-30) (B-II) Production of Semiconductor Device The epoxy resin molding materials I-1 to I-10 for sealing were prepared. Example II-1 to II-10 and Comparative Example II-1
~ II-30 semiconductor devices were manufactured. In addition, the sealing with the epoxy resin molding material for sealing uses a transfer molding machine, the mold temperature is 180 ° C., the molding pressure is 6.9 MPa,
After the molding was performed under the condition that the curing time was 90 seconds, post-curing was performed at 180 ° C. for 5 hours.

Fabrication of OMPAC BGA A fine wiring pattern was formed on an insulating base substrate (glass cloth-epoxy resin laminate, product name E-679 manufactured by Hitachi Chemical Co., Ltd.), and gold-plated terminal portions on the semiconductor chip mounting side and An insulating protective resist (product name PSR4000 manufactured by Taiyo Ink Mfg. Co., Ltd.) is formed on the surface excluding the external connection terminal portion on the opposite side.
AUS5) was applied and dried at 120 ° C. for 2 hours, and the adhesive (Hitachi Chemical Co., Ltd., trade name EN-X50) was applied to a semiconductor chip mounting substrate having outer dimensions of 26.2 mm × 26.2 mm × 0.6 mm. ), Chip size 9m
A semiconductor chip with an m × 9 mm × 0.51 mm thickness (81 mm ² area) and a pad pitch of 80 μm was mounted, and the temperature was raised from room temperature to 180 ° C. in a clean oven for 1 hour at a constant rate of heating, and then at 180 ° C. After heating for 3 hours, diameter 3
Wire bonding with a gold wire having a length of 0 μm and a length of 5 mm, and then the epoxy resin molding materials I-1 to I for sealing
-5 is used to set the semiconductor chip mounting surface to 26.2 mm x 2
Example II-1 in which transfer molding was performed under the above conditions into a package having a size of 6.2 mm × 0.9 mm and the package thickness was 1.5 mm.
II-5 semiconductor devices (OMPAC type BGA) were manufactured.

Epoxy resin molding material for encapsulation I-6 to
Using I-10, semiconductor devices (OMPAC type BGA) of Comparative Examples 1 to 5 having a package thickness of 1.5 mm were manufactured in the same manner as in Examples II-1 to II-5.

The chip size is 4 mm × 4 mm × 0.
51mm thickness (16mm ² area), pad pitch 100μ
m, and a sealing epoxy resin molding material 1-10 was used in the same manner as in Examples II-1 to II-5, except that a gold wire having a diameter of 30 μm and a length of 1.5 mm was used. Semiconductor chip mounting surface is 26.2 mm x 26.2 mm
Comparative examples II-6 to II- having a package thickness of 2.5 mm after transfer molding under the above conditions into a dimension of × 1.9 mm thickness.
Fifteen semiconductor devices (OMPAC type BGA) were manufactured.

Preparation of batch-type stacked BGA A chip in which a die bond film (trade name DF-400 manufactured by Hitachi Chemical Co., Ltd.) was attached to the back surface of a polyimide substrate having a length of 48 mm × width of 171 mm × thickness of 0.15 mm. Size 9.7 mm x 6.0 mm x 0.4 mm thickness (area 58
mm ² ), ^two semiconductor chips each having a pad pitch of 80 μm are stacked and arranged as shown in FIG.
Crimping under the conditions of ℃, load 1.96N, crimping time 10 seconds,
After baking at 180 ℃ for 1 hour, the diameter is 30μ
Wire bonding with a gold wire having a length of 5 mm and a length of 5 mm, and then using epoxy resin molding materials I-1 to I-5 for sealing, the semiconductor chip mounting surface is 40 mm in length × 83 mm in width × 0.8 mm in thickness. Transfer molding under the above conditions to the dimensions of
Examples II-6 to II-1 having a package thickness of 0.95 mm
0 semiconductor devices (collective mold type stacked BG
A) was produced.

Epoxy resin molding material for sealing I-6 to I-
10, and in the same manner as in Examples II-6 to II-10, Comparative Examples II-16 to I having a package thickness of 0.95 mm.
A semiconductor device of I-20 (collective mold type stacked BGA) was manufactured.

The chip size is 5.1 mm × 3.1 m
m × 0.4mm thickness (area 16mm ² ), pad pitch 1
00 μm semiconductor chip, diameter 30 μm, length 1.5
Examples II-6 to II-, except that a gold wire of mm was used.
Epoxy resin molding material for sealing I-1 in the same manner as 10
~ I-10 is used to measure the semiconductor chip mounting surface vertically 40 mm
Comparative Example I in which transfer molding was performed under the above conditions into a size of 83 mm in width × 2.5 mm in thickness and 2.5 mm in thickness, and the package thickness was 2.65 mm.
Semiconductor devices I-21 to II-30 (collective mold type stacked BGA) were manufactured.

The manufactured semiconductor devices of Examples II-1 to II-10 and Comparative Examples II-1 to II-30 were subjected to the test example 2 according to (1) wire deformation amount (wire flow index), (2). The number of generated voids was evaluated. The evaluation results are shown in Tables 5 to 8.

[0096]

[Table 5]

[Table 6]

[Table 7]

[Table 8] Comparative Example II-1 in which (C) a silane coupling agent having a secondary amino group and (D) a phosphoric acid ester-free encapsulating epoxy resin molding material I-6 to I-10 were used for encapsulation.
In II-5 and Comparative Examples II-16 to II-20, in the thin semiconductor devices, wire flow (large amount of wire deformation) and generation of voids, or molding failure such as unmolding due to gelation occurs. There is.

On the other hand, (A) epoxy resin, (B)
Epoxy resin molding material for encapsulation II-1 containing a curing agent and (C) a silane coupling agent having a secondary amino group
To II-5 are excellent in fluidity, and in the thin semiconductor devices of Examples II-1 to II-10 which are sealed by this, no wire flow is observed (wire deformation amount is extremely small),
Excellent in moldability without generation of voids.

Comparative Examples II-6 to II-15 and Comparative Examples II-21 to I in which the package thickness is out of the specified range of the present invention.
In the semiconductor device of I-30, Comparative Example II-13 in which the epoxy resin molding material 8 for sealing of Comparative Example containing a primary aminosilane coupling agent instead of the silane coupling agent having a secondary amino group was used for sealing. In addition, in Comparative Example II-28, no wire flow was observed (the amount of wire deformation was extremely small) except that gelation was not possible, and voids did not occur, resulting in excellent moldability.

(Examples III-1 to III-9) (Comparative Examples III-1 to III-4) (A-III) Preparation of epoxy resin molding material for encapsulation The following respective components are shown in Table 9 in parts by mass. Blended in and kneading temperature 8
Roll kneading was carried out under conditions of 0 ° C. and a kneading time of 10 minutes, and epoxy resin molding materials III-1 to III-9 for encapsulation (Examples III-1 to III-9) and molding material III-10.
To III-13 (Comparative Examples III-1 to III-4) were produced.

(A) Epoxy resin (A-1) Epoxy equivalent 196, melting point 106 ° C., 150
Melt viscosity (ICI viscosity) at 0.10C is 0.1 x ^10-1.
Bis type epoxy resin of Pas (Yukaka Shell Epoxy Co., Ltd., trade name: Epicoat YX-4000H) (A-2) Epoxy equivalent 186, melting point 75 ° C., 150 ° C.
Melt viscosity (ICI viscosity) at 0.1 × 10 ⁻¹ P
As bisphenol F type epoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., product name: YSLV-80XY) (A-3) Epoxy equivalent 210, melting point 120 ° C, 150
Melt viscosity (ICI viscosity) at 0.10C is 0.1 x ^10-1.
Pas stilbene type epoxy resin (Sumitomo Chemical Co., Ltd., trade name: ESLV-210) (A-4) Epoxy equivalent 195, softening point 65 ° C., 150
Melt viscosity (ICI viscosity) at 2.0 ° C. is 2.0 × 10 ⁻¹
Pas o-cresol novolac type epoxy resin (Sumitomo Chemical Co., Ltd., trade name: ESCN-190) (A-5) Epoxy equivalent 375, softening point 80 ° C, 150
Melt viscosity (ICI viscosity) at ℃ is 1.3 × 10 ^-1
Pas, bisphenol A type brominated epoxy resin having a bromine content of 48% by mass (manufactured by Sumitomo Chemical Co., Ltd., trade name:
ESB-400T) (B) Hardener (B-1) Softening point 70 ° C, hydroxyl equivalent 175, 150 ° C
Melt viscosity (ICI viscosity) at 2.0 × 10 ⁻¹ P
as phenol / aralkyl resin (Mitsui Chemicals, Inc., trade name: Milex XL-225) (B-2) Softening point 80 ° C, hydroxyl equivalent 199, 150 ° C
Melt viscosity (ICI viscosity) at 1.4 × 10 ⁻¹ P
As biphenyl type phenol resin (manufactured by Meiwa Kasei Co., Ltd., trade name: MEH-7851) (B-3) Softening point 80 ° C, hydroxyl equivalent 106, 150 ° C
Melt viscosity (ICI viscosity) at 1.8 × 10 ⁻¹ P
as phenol novolac resin (manufactured by Meiwa Kasei Co., Ltd., trade name: H-1) (B-4) softening point 81 ° C, hydroxyl group equivalent 120, 150 ° C
Melt viscosity (ICI viscosity) at 2.0 × 10 ⁻¹ P
As melamine phenol resin (manufactured by Dainippon Ink and Chemicals, Inc., trade name: Phenolite KA-7052-L
2) (D) Phosphoric acid ester (D-1) Aromatic condensed phosphoric acid ester (manufactured by Daihachi Chemical Co., Ltd., trade name: PX-200) (D-2) Triphenyl phosphate (E) Inorganic filler (E -1) Average particle size 17.5 μm, specific surface area 3.8 m ²
/ G spherical fused silica (F) curing accelerator (F-1) triphenylphosphine (G) coupling agent (G-1) γ-glycidoxypropyltrimethoxysilane (epoxysilane) (H) flame retardant ( H-1) Tateho Chemical Co., Ltd., composite metal hydroxide,
Product name: Echomag Z-10 (I) Other additives (I-1) Antimony trioxide (I-2) Carnauba wax (Cerarica NOD Co., Ltd.)
A) (I-3) carbon black (Mitsubishi Chemical Co., Ltd., trade name: MA-100)

[Table 9] (Test Example 3) Epoxy resin molding material II for encapsulation prepared
The characteristics of I-1 to III-13 were determined by the following tests. The results are shown in Table 10.

(1) Spiral flow Using a spiral flow measuring mold conforming to EMMI-1-66, an epoxy resin molding material for sealing is molded by a transfer molding machine at a mold temperature of 180 ° C. and a molding pressure of 6.9M.
Molded under the conditions of Pa and curing time of 90 seconds, flow distance (c
m) was calculated. (2) Disc flow 200 mm (W) x 200 mm (D) x 25 mm (H)
Upper mold and 200mm (W) × 200mm (D) × 15m
A sample (epoxy resin molding material for sealing) precisely weighed using a flat plate mold for disc flow measurement having a lower mold of m (H) 5
g on the center of the lower mold heated to 180 ° C, and after 5 seconds,
The upper mold heated to 180 ° C. is closed, compression molding is performed under the conditions of a load of 78 N and a curing time of 90 seconds, and the major axis (mm) and the minor axis (mm) of the molded product are measured with a caliper, and the average value (m
m) is the disc flow. (3) 50 mm diameter of the epoxy resin molding material for hot hardness sealing under the above conditions
C. A disk having a thickness of 3 mm was molded and measured immediately after molding using a Shore D hardness meter. (4) Flame-retardant Using a mold for molding a test piece having a thickness of 1/16 inch,
Mold the epoxy resin molding material for encapsulation under the above conditions and
Post-curing was performed at 0 ° C for 5 hours, and flame retardancy was evaluated according to the UL-94 test method.

[Table 10]

(Examples III-10 to III-27)
(Comparative Examples III-5 to III-12) (B-III) Manufacturing of semiconductor device Manufacturing of semiconductor device (LQFP and QFP) Epoxy resin molding material III-1 to III-9 for sealing
(Examples III-10 to III-27) or molding material I
II-10 to III-13 (Comparative Examples III-5 to III
Using -12), a semiconductor device was manufactured as follows. In addition, sealing with epoxy resin molding material for sealing,
After molding using a transfer molding machine under the conditions of a mold temperature of 180 ° C., a molding pressure of 6.9 MPa and a curing time of 90 seconds, 1
It was carried out by post-curing at 80 ° C. for 5 hours. Epoxy resin molding material for encapsulation III-1 to III-9 (Example I
II-10 to III-18) or molding material III-10
To III-13 (Comparative Examples III-5 to III-8), 10 mm × 10 mm × 0.4 mm (area 100 m
m ² ), a test silicone chip with a pad pitch of 80 μm was mounted, and wire bonding was performed with a gold wire having a diameter of 18 μm and a maximum length of 3 mm.
0 mm x 20 mm, thickness of the sealing material on the upper surface of the semiconductor chip 0.5 mm, thickness of sealing material on the back surface of the semiconductor chip 0.5 m
m, a semiconductor device having a total thickness of 1.5 mm (10
0 pin LQFP) was made. Moreover, epoxy resin molding materials III-1 to III-9 for encapsulation (Example III-1)
9-III-27) or molding material III-10-III
-13 (Comparative Examples III-9 to III-12),
4mm x 4mm x 0.4mm (area 16mm ² ), mounted with a test silicone chip with a pad pitch of 100μm, and wire-bonded with a gold wire having a diameter of 18μm and a maximum length of 1.5mm.
20 mm, thickness of the sealing material on the top surface of the semiconductor chip 1.1 m
m, the thickness of the sealing material on the back surface of the semiconductor chip was 1.1 mm, and the total thickness of the semiconductor device was 2.7 mm. Comparative Examples III-5 to III
-17 semiconductor device (64-pin QFP-1H) was manufactured.

(Examples III-28 to III-45)
(Comparative Examples III-13 to III-20) (Production of Semiconductor Device (OMPAC Type BGA)) Next, epoxy resin molding materials for encapsulation III-1 to III-9 (Examples III-28 to III-45). Or molding material III
-10 to III-13 (Comparative Examples III-13 to III-
20) was used to manufacture a semiconductor device in the following manner.
It should be noted that the encapsulation with the epoxy resin molding material for encapsulation was performed using a transfer molding machine under the conditions of a mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds.
It was carried out by post-curing at 5 ° C. for 5 hours.

Insulating base material (glass cloth-epoxy resin laminate, manufactured by Hitachi Chemical Co., Ltd., trade name E-67
9) A fine wiring pattern is formed on the surface of the semiconductor element mounting surface, excluding the gold-plated terminals on the semiconductor element mounting side and the external connection terminals on the opposite side.
SR4000AUS5) coated external shape is 26.2m in length
m × width 26.2 mm × thickness 0.6 mm substrate for mounting semiconductor elements is dried at 120 ° C. for 2 hours, then length 9 mm × width 9 mm
× A semiconductor element having a thickness of 0.51 mm (area 81 mm ² ) and a pad pitch of 80 μm is coated with an adhesive (Hitachi Chemical Co., Ltd., trade name EN-X50) and mounted, and the temperature is kept from room temperature to 180 in a clean oven. After heating to a constant temperature of 1 ° C. for 1 hour, it was further heated at a constant temperature of 180 ° C. for 1 hour. Then, the wire bond portion and the semiconductor element were wire-bonded with a gold wire having a diameter of 30 μm and a maximum length of 5 mm. Next, epoxy resin molding materials 1 to 9 for sealing
26.2 mm in length x 2 in width
Transfer molding was performed under the above conditions into a size of 6.2 mm × thickness 0.9 mm (thickness 1.5 mm BGA device), and Example I was used.
BGA devices II-28 to III-36 were manufactured. Molding material III-1 to III-9 instead of molding material III
-10 to III-13, Example III-28 to
Comparative Examples III-13 to II in the same manner as III-36
A semiconductor device I-16 was manufactured.

In addition, Examples III-28 to III-36
4mm x 4mm x 0.51mm thickness
(Area 16 mm ² ), a semiconductor element with a pad pitch of 100 μm is mounted, and a substrate in which a wire bond portion and a semiconductor element are wire-bonded with a gold wire having a diameter of 30 μm and a maximum length of 1.5 mm is manufactured, and epoxy resin molding for sealing is performed. Material III-1 to III-9 or III-10 to III-
13 is used to measure the semiconductor element mounting surface in a length of 26.2 mm × width 26.2 mm × thickness 1.9 mm (thickness 2.5 mm BGA
Device) under the above-mentioned conditions, and transfer-molded in Examples III-37 to III-45 or Comparative Examples III-17 to.
A BGA device of III-20 was manufactured.

(Examples III-46 to III-63)
(Comparative Examples III-21 to III-28) (Semiconductor device (collective mold type stacked type BG
Preparation of A)) Epoxy resin molding material for encapsulation III-1 to
III-9 (Examples III-46 to III-63) or molding materials III-10 to III-13 (Comparative Example III-)
21-III-28) was used to fabricate a semiconductor device in the following manner. The sealing with the epoxy resin molding material for sealing is performed by using a transfer molding machine at a mold temperature of 18
After molding under conditions of 0 ° C., molding pressure of 6.9 MPa and curing time of 90 seconds, post-curing was performed at 180 ° C. for 5 hours. Die bond film DF-400 manufactured by Hitachi Chemical Co., Ltd. was attached to the back surface of a polyimide substrate having a length of 48 mm × a width of 171 mm × a thickness of 0.15 mm.
^Two semiconductor elements having a size of 0 mm × 0.4 mm (area: 58 mm ² ) and a pad pitch of 80 μm are stacked, and a total of 56 laminated semiconductor elements are arranged as shown in FIG.
Crimping under the conditions of ℃, load of 200 gf and crimping time of 10 seconds,
Further, it was baked at 180 ° C. for 1 hour. Then, the wire bond portion and the semiconductor element were wire-bonded with a gold wire having a diameter of 30 μm and a maximum length of 5 mm. Next, using the epoxy resin molding materials 1 to 9 for encapsulation, the semiconductor element mounting surface is sized 40 mm long × 83 mm wide × 0.8 mm thick (0.95 mm thick BGA device) as shown in FIG. Transfer molding was performed under the above-mentioned conditions on Example III-46.
BGA devices of III-54 were manufactured. Molding material II
Molding materials III-10 to I instead of I-1 to III-9
Using II-13, Examples III-46 to III-5
In the same manner as in 4, the semiconductor devices of Comparative Examples III-21 to III-24 were manufactured.

In addition, Examples III-46 to III-54
Similarly to 5.1 mm x 3.1 mm x 0.4 mm
(Area 16 mm ² ), with only one semiconductor element with a pad pitch of 100 μm mounted, diameter 30 μm, maximum length 1.5
A wire bonding part and a semiconductor element are wire-bonded to each other with a gold wire of mm, and a semiconductor element mounting surface is 40 mm in length x 83 mm in width x thickness using epoxy resin molding materials III-1 to III-13 for sealing. 2.5 mm
Transfer molding was performed under the above conditions to a size of (thickness: 2.65 mm BGA device), and Examples III-55 to III-63 were used.
Alternatively, BGA devices of Comparative Examples III-25 to III-28 were manufactured.

Fabricated Examples III-10 to III-6
The semiconductor devices of Comparative Example 3 and Comparative Examples III-5 to III-28 were evaluated according to the above-mentioned Test Method 2 for (1) wire deformation amount (wire flow index) and (2) number of voids. The evaluation results are shown in Tables 11 to 16.

[0109]

[Table 11]

[Table 12]

[Table 13]

[Table 14]

[Table 15]

[Table 16] From the results of Tables 11 to 16, epoxy resin molding materials III-10 to II for encapsulation containing neither (C) a silane coupling agent having a secondary amino group nor (D) phosphate ester.
Comparative Examples III-5 to III-28 sealed with I-13
In semiconductor devices, wire flow (large amount of wire deformation)
It can be seen that a molding defect such as the occurrence of voids and voids has occurred.

On the other hand, (A) epoxy resin, (B)
The epoxy resin molding materials III-1 to III-9 for encapsulation containing a curing agent, (E) inorganic filler, (F) curing accelerator and (D) phosphoric ester have excellent fluidity. In all of the sealed semiconductor devices of Examples III-10 to III-63, no wire flow was observed, or the amount of wire deformation was minimal, and no void was generated.
It is clear from the results of Tables 15 to 20 that the moldability is excellent.

It will be appreciated by those skilled in the art that, besides the embodiments described above, many changes and modifications can be made without departing from the spirit and scope of the invention.

[0112]

The encapsulating epoxy resin molding material for a thin semiconductor device according to the present invention has excellent fluidity, and the semiconductor device encapsulated by the encapsulating thin resin device has a thin shape, a large number of pins, a long wire, a narrow pad pitch, or an organic substrate. Alternatively, even though the semiconductor device is a semiconductor device in which a semiconductor chip is arranged on a mounting substrate such as an organic film, there are no molding defects such as wire flow and voids as shown in the embodiments, so that its industrial value is great.

[Brief description of drawings]

FIG. 1 is a sectional view (a) of a semiconductor device (QFP), (b) a top view (partially see through), and (c) an enlarged view of a bonding pad portion.

FIG. 2 is a diagram showing a method for measuring a wire deformation amount.

FIG. 3 is a cross-sectional view (a) of a semiconductor device (BGA), (b) a top view (partially see through), and (c) an enlarged view of a bonding pad portion.

FIG. 4 is a diagram showing a method for measuring a wire deformation amount.

FIG. 5 is a diagram of a batch mold type BGA device.

[Explanation of symbols]

1: Island (tab) 2: Die bond agent 3: Semiconductor chip 4: Lead pin 5: Wire 6: Epoxy resin molding material for sealing (sealing material) 7: Terminal part (bonding pad) 8: Insulation base board 9: Solder ball 10: Terminal part of wiring board

   ─────────────────────────────────────────────────── ─── Continued front page    (31) Priority claim number Japanese Patent Application 2000-402360 (P2000-402360) (32) Priority date December 28, 2000 (December 28, 2000) (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application No. 2000-402361 (P2000-402361) (32) Priority date December 28, 2000 (December 28, 2000) (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application No. 2000-402362 (P2000-402362) (32) Priority date December 28, 2000 (December 28, 2000) (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application 2000-402363 (P2000-402363) (32) Priority date December 28, 2000 (December 28, 2000) (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application No. 2001-82741 (P2001-82741) (32) Priority date March 22, 2001 (March 22, 2001) (33) Priority claiming country Japan (JP) (72) Inventor Shinsuke Hagiwara             Hitachi Chemical Co., Ltd. 1772, Kagoku, Yuki City, Ibaraki Prefecture             Shimodate Office of Industry Co., Ltd. F-term (reference) 4J002 CC032 CD041 CD051 CD081                       CE002 EW047 EX076 FD010                       FD037 FD142 FD147 FD206                       GJ02 GQ05                 4M109 AA01 CA21 EB06 EB18

Claims (5)

[Claims] 1. An epoxy resin (A) and a curing agent (B) as an encapsulant for a semiconductor device, comprising the following configurations (a) to (f) in combination with the following (1) or (2): Use of an epoxy resin molding material for encapsulation, which contains an agent and further contains (C) a silane coupling agent having a secondary amino group or (D) a phosphoric acid ester. (A) At least one of the thicknesses of the sealing material on the top surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more (1) Configuration (a) or (e) (2) One or more selected from the configuration (a) and other configurations (b) to (f) 2. An epoxy resin (A) and a (A) epoxy resin as a sealing material for a semiconductor device, which comprises the following constitutions (a) to (f) in any combination of the following (1) to (3): B)
Use of an epoxy resin molding material for sealing which contains a curing agent and further contains (C) a silane coupling agent having a secondary amino group or (D) a phosphoric acid ester. (A) At least one of the thicknesses of the sealing material on the top surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more (1) Configurations (b) and (c) (2) Configurations (b) and (d) (3) Configurations (b), (c) and (d) 3. An epoxy resin (A) and (A) as an encapsulant for a semiconductor device, comprising the following configurations (a) to (f) in combination with any one of the following (1) to (9): B)
Use of an epoxy resin molding material for sealing which contains a curing agent and further contains (C) a silane coupling agent having a secondary amino group or (D) a phosphoric acid ester. (A) At least one of the thicknesses of the sealing material on the top surface of the semiconductor chip and the back surface of the semiconductor chip is 0.7 mm or less (b) The number of lead pins is 80 pins or more (c) The wire length is 2 mm or more (D) The pad pitch on the semiconductor chip is 90 μm or less (e) The semiconductor chip is arranged on the mounting substrate and the package thickness is 2 mm or less (f) The area of the semiconductor chip is 25 mm ² or more (1) Configurations (a) and (b) (2) Configurations (a) and (c) (3) Configurations (a) and (d) (4) Configurations (a) and (f) (5) Configurations (c) and ( e) (6) Structures (a), (b) and (d) (7) Structures (c), (e) and (f) (8) Structures (a), (b), (d) and (f) ) (9) Configurations (a), (b), (c) and (d) 4. The use according to claim 1, wherein the semiconductor device is a stacked type package. 5. The use according to claim 1, wherein the semiconductor device is a one-piece mold type package.