JP2003234286A - Liquid treatment device - Google Patents
Liquid treatment deviceInfo
- Publication number
- JP2003234286A JP2003234286A JP2002226578A JP2002226578A JP2003234286A JP 2003234286 A JP2003234286 A JP 2003234286A JP 2002226578 A JP2002226578 A JP 2002226578A JP 2002226578 A JP2002226578 A JP 2002226578A JP 2003234286 A JP2003234286 A JP 2003234286A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- processing
- flow rate
- suction
- processing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 548
- 239000000758 substrate Substances 0.000 claims abstract description 155
- 238000012545 processing Methods 0.000 claims description 405
- 238000004140 cleaning Methods 0.000 claims description 76
- 238000001514 detection method Methods 0.000 claims description 24
- 230000003028 elevating effect Effects 0.000 claims description 23
- 239000011521 glass Substances 0.000 abstract description 106
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 90
- 230000007246 mechanism Effects 0.000 description 37
- 238000011161 development Methods 0.000 description 31
- 230000018109 developmental process Effects 0.000 description 31
- 238000000034 method Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 21
- 238000006073 displacement reaction Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 13
- 238000003825 pressing Methods 0.000 description 11
- 239000002699 waste material Substances 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000007599 discharging Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000007921 spray Substances 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 4
- 230000036632 reaction speed Effects 0.000 description 4
- 239000012487 rinsing solution Substances 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000010129 solution processing Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 102100033041 Carbonic anhydrase 13 Human genes 0.000 description 1
- 101000867860 Homo sapiens Carbonic anhydrase 13 Proteins 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、例えばレチクル
等のフォトマスク用ガラス基板に処理液を供給して処理
する液処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing apparatus for supplying a processing liquid to a glass substrate for a photomask such as a reticle and processing the same.
【0002】[0002]
【従来の技術】一般に、半導体デバイスの製造工程にお
いては、半導体ウエハやLCD用ガラス基板等(以下に
ウエハ等という)の表面に例えばレジスト液を塗布し、
ステッパー等の露光装置を用いて回路パターンを縮小し
てレジスト膜を露光し、露光後のウエハ表面に現像液を
塗布して現像処理を行うフォトリソグラフィー技術が用
いられている。2. Description of the Related Art Generally, in a semiconductor device manufacturing process, for example, a resist solution is applied to the surface of a semiconductor wafer, a glass substrate for LCD or the like (hereinafter referred to as a wafer),
A photolithography technique is used in which a circuit pattern is reduced using an exposure device such as a stepper to expose a resist film, and a developing solution is applied to the exposed wafer surface to perform a development process.
【0003】上記露光処理工程においては、例えばステ
ッパー(縮小投影露光装置)等の露光装置が用いられて
おり、レチクル等のフォトマスクに光を照射し、フォト
マスクに描画されている回路パターンの原図を縮小して
ウエハ上に転写している。In the above exposure process, an exposure device such as a stepper (reduction projection exposure device) is used, for example, a photomask such as a reticle is irradiated with light, and an original drawing of a circuit pattern drawn on the photomask is used. Are reduced and transferred onto the wafer.
【0004】ところで、このフォトマスクの製造工程に
おいても、上記ウエハ等と同様にフォトリソグラフィ技
術が用いられており、レジスト塗布工程、露光処理工
程、現像処理工程という一連のプロセス工程を経ている
が、フォトマスクはウエハ等に回路パターンを投影する
ための原図であるため、線幅等のパターン寸法は更に高
精度が要求される。By the way, in the photomask manufacturing process as well, the photolithography technique is used similarly to the wafer and the like, and a series of process steps such as a resist coating step, an exposure processing step and a development processing step are performed. Since the photomask is an original drawing for projecting a circuit pattern on a wafer or the like, the pattern dimensions such as the line width are required to have higher accuracy.
【0005】ここで、フォトマスクの現像方法には、フ
ォトマスク用のガラス基板をスピンチャック上に吸着保
持して低速で回転し、スプレーノズルを用いて現像液を
ガラス基板上に噴霧状に吐出しながら現像処理を行うス
プレー現像という方法がある。Here, in the photomask developing method, a glass substrate for a photomask is adsorbed and held on a spin chuck and rotated at a low speed, and a developing solution is sprayed onto the glass substrate using a spray nozzle. There is a method called spray development in which development processing is performed.
【0006】また、ガラス基板とスキャンノズルを相対
移動させながら、スキャンノズルから供給される現像液
をガラス基板上に液盛りし、静止状態で現像処理を行う
パドル現像という方法もある。There is also a method called paddle development in which the developing solution supplied from the scan nozzle is poured onto the glass substrate while the glass substrate and the scan nozzle are moved relative to each other, and the developing process is performed in a stationary state.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、スプレ
ー現像では、現像液と反応して生成された溶解生成物
が、回転による遠心力によってガラス基板の辺部や角部
に流れるため、この部分で現像液との反応が抑制され、
線幅等のパターン寸法が不均一になるという問題があっ
た。However, in the spray development, the dissolution product generated by reacting with the developing solution flows to the sides and corners of the glass substrate due to the centrifugal force due to the rotation, so that the development is performed in this part. The reaction with the liquid is suppressed,
There is a problem in that the pattern dimensions such as line width are not uniform.
【0008】また、パドル現像では、溶解生成物が特定
の場所に流れるということはなく、スプレー現像のよう
な問題は生じないが、パターンの幾何学的構造やパター
ン密度の差異により、溶解生成物の生成量や現像液の濃
度が局所的に異なり、エッチング速度等が変化するロー
ディング効果と呼ばれる現象が生じ、回路パターンが不
均一になるという問題があった。Further, in the paddle development, the dissolved product does not flow to a specific place, and the problem such as spray development does not occur, but the dissolved product is caused by the difference in the geometric structure of the pattern and the pattern density. There is a problem in that the circuit pattern becomes non-uniform due to a phenomenon called a loading effect in which the generation amount and the concentration of the developer are locally different and the etching rate and the like change.
【0009】この発明は上記事情に鑑みてなされたもの
で、レチクル等のフォトマスク(被処理基板)に対する
均一な現像処理が可能な液処理装置を提供することを目
的とするものである。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a liquid processing apparatus capable of uniformly developing a photomask (substrate to be processed) such as a reticle.
【0010】[0010]
【課題を解決するための手段】上記目的を達成するため
に、この発明の液処理装置は、板状の被処理基板と一定
の隙間を空けて相対的に平行移動可能な液処理面を有す
るノズルヘッドと、上記液処理面に設けられ、上記被処
理基板表面に帯状に処理液を供給する処理液供給手段
と、上記液処理面に処理液供給手段と平行に設けられ、
上記処理液供給手段から供給された処理液を吸引すると
共に、上記被処理基板の表面に処理液の流れを形成する
処理液吸引手段と、を具備することを特徴とする(請求
項1)。In order to achieve the above object, a liquid processing apparatus of the present invention has a liquid processing surface which is movable in parallel with a plate-shaped substrate to be processed with a certain gap. A nozzle head, a treatment liquid supply means provided on the liquid treatment surface and supplying a treatment liquid in a belt shape to the surface of the substrate to be treated, and a treatment liquid supply means provided on the liquid treatment surface in parallel with the treatment liquid supply means,
A treatment liquid suction means for sucking the treatment liquid supplied from the treatment liquid supply means and for forming a flow of the treatment liquid on the surface of the substrate to be processed is provided (claim 1).
【0011】この発明の液処理装置において、上記処理
液吸引手段は、少なくとも処理液供給手段の相対移動方
向前方側に形成される方が好ましく、また、処理液供給
手段の相対移動方向の前後に形成されるか、あるいは、
処理液供給手段の周りを囲むように形成される方が更に
好ましい(請求項2,3,4)。この場合、上記処理液
吸引手段は、処理液供給手段の長手方向の長さより長く
形成される方が好ましい(請求項5)。また、上記処理
液吸引手段の吸引口は、処理液供給手段側に向くように
形成される方が好ましい(請求項6)。また、上記処理
液供給手段は、処理液供給手段の長手方向に等間隔に設
けられた複数の処理液供給孔と、上記処理液供給孔の下
部に連通するスリットと、上記スリットの下部に連通す
る拡開テーパ状の処理液供給口と、上記処理液供給口内
に設けられる整流緩衝棒と、を具備する方が好ましい
(請求項7)。また、上記処理液供給手段は、処理液の
温度を調節可能な処理液温度調節手段を具備する方が好
ましい(請求項8)。In the liquid processing apparatus of the present invention, the processing liquid suction means is preferably formed at least on the front side in the relative movement direction of the processing liquid supply means, and before and after the processing liquid supply means in the relative movement direction. Formed or
It is further preferable that the treatment liquid supply means is formed so as to surround the periphery of the treatment liquid supply means (claims 2, 3 and 4). In this case, it is preferable that the processing liquid suction means is formed longer than the length of the processing liquid supply means in the longitudinal direction (claim 5). Further, it is preferable that the suction port of the processing liquid suction means is formed so as to face the processing liquid supply means side (claim 6). The processing liquid supply means includes a plurality of processing liquid supply holes provided at equal intervals in the longitudinal direction of the processing liquid supply means, a slit communicating with a lower portion of the processing liquid supply hole, and a slit communicating with a lower portion of the slit. It is preferable to provide a widening tapered processing liquid supply port and a rectification buffer rod provided in the processing liquid supply port (claim 7). Further, it is preferable that the treatment liquid supply means includes a treatment liquid temperature adjusting means capable of adjusting the temperature of the treatment liquid (claim 8).
【0012】また、この発明の液処理装置において、上
記ノズルヘッドの液処理面に、処理液吸引手段を挟んで
処理液供給手段と対向する位置に設けられ、被処理基板
の表面に洗浄液を供給する洗浄液供給手段を具備する方
が好ましい(請求項9)。この場合、上記液処理面にお
ける処理液吸引手段と洗浄液供給手段との間に、上記処
理液吸引手段と平行で且つ処理液吸引手段側が低い段部
が形成されるか、または、被処理基板側に向かって隆起
する上記処理液吸引手段と平行な凸部が形成される方が
好ましい(請求項10,11)。また、上記洗浄液供給
手段は、洗浄液の温度を調節可能な洗浄液温度調節手段
を具備する方が好ましい(請求項12)。Further, in the liquid processing apparatus of the present invention, the cleaning liquid is supplied to the surface of the substrate to be processed, which is provided on the liquid processing surface of the nozzle head so as to face the processing liquid supply means with the processing liquid suction means interposed therebetween. It is preferable that the cleaning liquid supply means is provided (Claim 9). In this case, a stepped portion parallel to the processing liquid suction means and having a low processing liquid suction means side is formed between the processing liquid suction means and the cleaning liquid supply means on the liquid processing surface, or the processed substrate side It is preferable to form a convex portion that is parallel to the processing liquid suction means that bulges toward (claims 10 and 11). Further, it is preferable that the cleaning liquid supply means includes cleaning liquid temperature adjusting means capable of adjusting the temperature of the cleaning liquid (claim 12).
【0013】また、この発明の液処理装置において、上
記処理液供給手段が供給する処理液の流量を調節可能な
処理液流量調節手段と、上記処理液供給手段が供給する
処理液の流量を検出する処理液流量検出手段と、上記処
理液吸引手段が吸引する処理液の流量を調節可能な吸引
量調節手段と、上記処理液吸引手段が吸引する処理液の
流量を検出する吸引量検出手段と、上記処理液流量検出
手段及び吸引量検出手段の検出情報と、予め記憶された
情報とに基づいて、上記処理液流量調節手段及び吸引量
調節手段を制御する制御手段と、を具備するか、また
は、上記処理液供給手段が供給する処理液の流量を調節
可能な処理液流量調節手段と、上記処理液供給手段が供
給する処理液の流量を検出する処理液流量検出手段と、
上記処理液吸引手段が吸引する処理液の流量を調節可能
な吸引量調節手段と、上記処理液吸引手段が吸引する処
理液の流量を検出する吸引量検出手段と、上記洗浄液供
給手段が供給する洗浄液の流量を調節可能な洗浄液流量
調節手段と、上記洗浄液供給手段が供給する洗浄液の流
量を検出する洗浄液流量検出手段と、上記処理液流量検
出手段、吸引量検出手段及び洗浄液流量検出手段の検出
情報と、予め記憶された情報とに基づいて、上記処理液
流量調節手段、吸引量調節手段及び洗浄液流量調節手段
を制御する制御手段と、を具備する方が好ましい(請求
項13,14)。この場合、上記制御手段を、上記処理
液吸引手段が吸引する処理液の流量が、上記液処理面か
ら処理液を流出せず、かつ、上記処理液吸引手段に空気
を吸引しない所定値となるように、上記吸引流量調節手
段を制御可能に形成する方が好ましい(請求項15)。
また、上記ノズルヘッドの液処理面と被処理基板表面と
の距離を検出する間隔検出手段と、上記ノズルヘッドを
昇降可能な昇降手段とを具備し、上記制御手段は、上記
間隔検出手段の検出信号と、予め記憶された情報とに基
づいて、上記昇降手段を制御する方が好ましい(請求項
16)。Further, in the liquid processing apparatus according to the present invention, the processing liquid flow rate adjusting means capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply means and the processing liquid flow rate supplied by the processing liquid supply means are detected. Processing liquid flow rate detection means, suction amount adjustment means capable of adjusting the flow rate of the processing liquid sucked by the processing liquid suction means, and suction amount detection means for detecting the flow rate of the processing liquid sucked by the processing liquid suction means. A control means for controlling the processing liquid flow rate adjusting means and the suction amount adjusting means based on the detection information of the processing liquid flow rate detecting means and the suction amount detecting means and the information stored in advance, Alternatively, a processing liquid flow rate adjusting unit capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply unit, and a processing liquid flow rate detecting unit detecting the flow rate of the processing liquid supplied by the processing liquid supply unit,
Suction amount adjusting means capable of adjusting the flow rate of the processing liquid sucked by the processing liquid suction means, suction amount detecting means for detecting the flow rate of the processing liquid sucked by the processing liquid suction means, and the cleaning liquid supply means Cleaning liquid flow rate adjusting means capable of adjusting the flow rate of the cleaning liquid, cleaning liquid flow rate detecting means for detecting the flow rate of the cleaning liquid supplied by the cleaning liquid supplying means, detection of the processing liquid flow rate detecting means, the suction amount detecting means and the cleaning liquid flow rate detecting means It is preferable to include control means for controlling the processing liquid flow rate adjusting means, the suction amount adjusting means and the cleaning liquid flow rate adjusting means based on the information and the information stored in advance (claims 13 and 14). In this case, the flow rate of the processing liquid sucked by the processing liquid suction means in the control means becomes a predetermined value at which the processing liquid does not flow out from the liquid processing surface and the air is not sucked into the processing liquid suction means. As described above, it is preferable to form the suction flow rate adjusting means in a controllable manner (claim 15).
The control means includes an interval detecting means for detecting the distance between the liquid processing surface of the nozzle head and the surface of the substrate to be processed, and an elevating means for elevating the nozzle head. It is preferable to control the elevating means based on a signal and information stored in advance (claim 16).
【0014】請求項1,2,3,4記載の発明によれ
ば、被処理基板の表面に一定幅の処理液の流れを積極的
に形成することができるので、現像処理によって被処理
基板の表面に生成した溶解生成物を除去し、新鮮な現像
液を供給することができる。この場合、処理液吸引手段
は、処理液供給手段の長手方向の長さより長く形成され
るので、液処理装置の両端から処理液が、処理前又は処
理後の被処理基板上に染み出すのを防止することができ
る(請求項5)。According to the first, second, third, and fourth aspects of the invention, since the flow of the processing liquid having a constant width can be positively formed on the surface of the substrate to be processed, the substrate to be processed is subjected to the development process. The dissolved product formed on the surface can be removed and fresh developer can be supplied. In this case, since the treatment liquid suction means is formed longer than the length of the treatment liquid supply means in the longitudinal direction, the treatment liquid is prevented from seeping out from the both ends of the liquid treatment apparatus onto the target substrate before or after the treatment. It can be prevented (Claim 5).
【0015】また、請求項6記載の発明によれば、処理
液吸引手段の吸引口は、処理液供給手段側に向くように
形成されるので、処理液を円滑に吸引することができ
る。According to the sixth aspect of the invention, since the suction port of the processing liquid suction means is formed to face the processing liquid supply means side, the processing liquid can be smoothly sucked.
【0016】また、請求項7記載の発明によれば、処理
液供給手段は、処理液供給手段の長手方向に等間隔に設
けられた複数の処理液供給孔と、処理液供給孔の下部に
連通するスリットと、スリットの下部に連通する拡開テ
ーパ状の処理液供給口と、処理液供給口内に設けられる
整流緩衝棒と、を具備するので、スリットで処理液供給
孔による処理液の供給むら(吐出むら、塗布むら)を防
止し、整流緩衝棒で被処理基板に均一に処理液を供給
(吐出、塗布)することができ、処理液供給手段と処理
液吸引手段との間に均一な処理液の流れを形成すること
ができる。According to the seventh aspect of the present invention, the treatment liquid supply means has a plurality of treatment liquid supply holes provided at equal intervals in the longitudinal direction of the treatment liquid supply means, and the treatment liquid supply holes are provided below the treatment liquid supply holes. Since the slits are in communication with each other, the processing liquid supply port having an expanding taper shape that communicates with the lower part of the slit, and the rectification buffer rod provided in the processing liquid supply port are provided, the processing liquid supply hole supplies the processing liquid through the processing liquid supply hole. The unevenness (unevenness of discharge, unevenness of application) can be prevented, and the processing liquid can be uniformly supplied (discharged and applied) to the substrate to be processed by the rectifying buffer rod, so that the processing liquid supply means and the processing liquid suction means are evenly arranged. It is possible to form a stream of different processing liquids.
【0017】また、請求項8記載の発明によれば、処理
液供給手段は、処理液の温度を調節可能な処理液温度調
節手段を具備することにより、処理液の粘度や処理速度
(反応速度)等を一定にすることができる。According to the eighth aspect of the present invention, the treatment liquid supply means is provided with a treatment liquid temperature adjusting means capable of adjusting the temperature of the treatment liquid, so that the viscosity of the treatment liquid and the treatment speed (reaction speed) can be improved. ) Etc. can be made constant.
【0018】また、請求項9記載の発明によれば、ノズ
ルヘッドの液処理面に、処理液吸引手段を挟んで処理液
供給手段と対向する位置に設けられ、被処理基板の表面
に洗浄液を供給する洗浄液供給手段を具備するので、洗
浄液供給手段が供給した洗浄液を処理液吸引手段が吸引
することにより、処理液が処理液吸引手段から洗浄液供
給手段側へ広がるのを防止して、被処理基板上の処理液
の幅を一定にすることができる。また、被処理基板上の
パーティクル等を除去することができる。この場合、液
処理面における処理液吸引手段と洗浄液供給手段との間
に、処理液吸引手段と平行で且つ処理液吸引手段側が低
い段部が形成されるか、又は、被処理基板側に向かって
隆起する処理液吸引手段と平行な凸部が形成されるの
で、更に確実に処理液の幅を一定にすることができる
(請求項10,11)。また、洗浄液供給手段は、洗浄
液の温度を調節可能な洗浄液温度調節手段を具備するの
で、被処理基板や処理液の温度を一定にすることがで
き、処理液の粘度や処理速度(反応速度)等を一定にす
ることができる(請求項12)。According to the present invention, the cleaning liquid is provided on the surface of the substrate to be processed, which is provided on the liquid processing surface of the nozzle head so as to face the processing liquid supply means with the processing liquid suction means interposed therebetween. Since the cleaning liquid supply unit for supplying the cleaning liquid is provided, the processing liquid suction unit sucks the cleaning liquid supplied by the cleaning liquid supply unit to prevent the processing liquid from spreading from the processing liquid suction unit to the cleaning liquid supply unit side. The width of the processing liquid on the substrate can be made constant. Moreover, particles and the like on the substrate to be processed can be removed. In this case, a stepped portion that is parallel to the processing liquid suction means and has a low processing liquid suction means side is formed between the processing liquid suction means and the cleaning liquid supply means on the liquid processing surface, or is directed toward the processed substrate side. Since the convex portion parallel to the rising processing liquid suction means is formed, the width of the processing liquid can be more reliably made constant (claims 10 and 11). Further, since the cleaning liquid supply means includes the cleaning liquid temperature adjusting means capable of adjusting the temperature of the cleaning liquid, the temperature of the substrate to be processed and the processing liquid can be kept constant, and the viscosity of the processing liquid and the processing speed (reaction speed) Etc. can be made constant (claim 12).
【0019】また、請求項13記載の発明によれば、処
理液供給手段が供給する処理液の流量を調節可能な処理
液流量調節手段と、処理液供給手段が供給する処理液の
流量を検出する処理液流量検出手段と、処理液吸引手段
が吸引する処理液の流量を調節可能な吸引量調節手段
と、処理液吸引手段が吸引する処理液の流量を検出する
吸引量検出手段と、処理液流量検出手段及び吸引量検出
手段の検出情報と、予め記憶された情報とに基づいて、
処理液流量調節手段及び吸引量調節手段を制御する制御
手段と、を具備するので、処理液の流れを、被処理基板
の表面に生成した溶解生成物を除去し得る流速に制御す
ることができ、均一な液処理をすることができる。According to the thirteenth aspect of the present invention, the processing liquid flow rate adjusting means capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply means and the processing liquid flow rate supplied by the processing liquid supply means are detected. Processing liquid flow rate detecting means, suction amount adjusting means capable of adjusting the flow rate of the processing liquid sucked by the processing liquid suction means, suction amount detecting means for detecting the flow rate of the processing liquid sucked by the processing liquid suction means, and processing. Based on the detection information of the liquid flow rate detection means and the suction amount detection means, and the information stored in advance,
Since the control means for controlling the processing liquid flow rate adjusting means and the suction amount adjusting means is provided, the flow of the processing liquid can be controlled to a flow rate capable of removing the dissolution product generated on the surface of the substrate to be processed. Therefore, uniform liquid treatment can be performed.
【0020】また、請求項14記載の発明によれば、処
理液供給手段が供給する処理液の流量を調節可能な処理
液流量調節手段と、処理液供給手段が供給する処理液の
流量を検出する処理液流量検出手段と、処理液吸引手段
が吸引する処理液の流量を調節可能な吸引量調節手段
と、処理液吸引手段が吸引する処理液の流量を検出する
吸引量検出手段と、洗浄液供給手段が供給する洗浄液の
流量を調節可能な洗浄液流量調節手段と、洗浄液供給手
段が供給する洗浄液の流量を検出する洗浄液流量検出手
段と、処理液流量検出手段、吸引量検出手段及び洗浄液
流量検出手段の検出情報と、予め記憶された情報とに基
づいて、処理液流量調節手段、吸引量調節手段及び洗浄
液流量調節手段を制御する制御手段と、を具備するの
で、処理液の幅を確実に一定にすることができる。According to the fourteenth aspect of the present invention, the processing liquid flow rate adjusting means capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply means, and the processing liquid flow rate supplied by the processing liquid supply means are detected. Processing liquid flow rate detecting means, suction amount adjusting means capable of adjusting the flow rate of the processing liquid sucked by the processing liquid suction means, suction amount detecting means for detecting the flow rate of the processing liquid sucked by the processing liquid suction means, and cleaning liquid A cleaning liquid flow rate adjusting unit capable of adjusting the flow rate of the cleaning liquid supplied by the supply unit, a cleaning liquid flow rate detecting unit detecting the flow rate of the cleaning liquid supplied by the cleaning liquid supply unit, a processing liquid flow rate detecting unit, a suction amount detecting unit and a cleaning liquid flow rate detecting unit. The width of the processing liquid is ensured because the processing liquid is provided with the control means for controlling the processing liquid flow rate adjusting means, the suction amount adjusting means and the cleaning liquid flow rate adjusting means based on the detection information of the means and the information stored in advance. It can be kept constant.
【0021】また、制御手段は、処理液吸引手段が吸引
する処理液の流量が、液処理面から処理液を流出せず、
かつ、処理液吸引手段に空気を吸引しない所定値となる
ように、吸引流量調節手段を制御するので、処理液を有
効に利用できると共に、均一な処理液の流れを形成し、
均一な液処理をすることができる(請求項15)。Further, the control means is such that the flow rate of the processing liquid sucked by the processing liquid suction means does not cause the processing liquid to flow out from the liquid processing surface.
Moreover, since the suction flow rate adjusting means is controlled so as to have a predetermined value that does not suck air into the processing liquid suction means, the processing liquid can be effectively used and a uniform processing liquid flow is formed.
A uniform liquid treatment can be performed (Claim 15).
【0022】また、ノズルヘッドの液処理面と被処理基
板表面との距離を検出する間隔検出手段と、ノズルヘッ
ドを昇降可能な昇降手段とを具備し、制御手段は、間隔
検出手段の検出信号と、予め記憶された情報とに基づい
て、昇降手段を制御するので、ノズルヘッドの液処理面
と被処理基板との間の隙間を確実に一定にすることがで
き、更に均一な液処理ができる(請求項16)。Further, it comprises an interval detecting means for detecting the distance between the liquid processing surface of the nozzle head and the surface of the substrate to be processed, and an elevating means for elevating the nozzle head, and the control means is a detection signal of the interval detecting means. Since the elevating means is controlled on the basis of the information stored in advance, the gap between the liquid processing surface of the nozzle head and the substrate to be processed can be surely made constant, and more uniform liquid processing can be performed. It is possible (claim 16).
【0023】[0023]
【発明の実施の形態】以下に、この発明の実施の形態を
図面に基づいて詳細に説明する。この実施形態では、こ
の発明の液処理装置を、フォトマスク用の被処理基板、
例えばレチクル用のガラス基板Gに現像処理を行う現像
処理装置に適用した場合について説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings. In this embodiment, the liquid processing apparatus of the present invention is applied to a substrate to be processed for a photomask,
For example, a case where the present invention is applied to a development processing apparatus that performs development processing on a glass substrate G for a reticle will be described.
【0024】現像処理装置は、図1に示すように、レジ
スト液の塗布及び回路パターンの露光が終了したガラス
基板Gを装置内に搬入し、または現像処理が終了したガ
ラス基板Gを装置外へ搬出する受渡部1と、受渡部1か
ら搬入されたガラス基板Gを現像処理する処理部3と、
受渡部1と処理部3との間でガラス基板Gを搬送する搬
送部2とで主に構成されている。As shown in FIG. 1, the development processing apparatus carries in the glass substrate G on which the resist solution has been applied and the circuit pattern has been exposed to the inside of the apparatus or the glass substrate G on which the development processing has been completed to the outside of the apparatus. A delivery section 1 to be carried out, a processing section 3 to develop the glass substrate G carried in from the delivery section 1,
The transfer unit 1 and the processing unit 3 mainly include a transfer unit 2 that transfers the glass substrate G.
【0025】受渡部1には、ガラス基板Gの縁部を支持
して上下方向に昇降可能な複数例えば3本の支持ピン
(図示せず)がマスクステージ4の内側に設けられ、外
部から挿入される搬送アーム等の搬送手段(図示せず)
と、後述するマスクステージ4との間でガラス基板Gを
受け渡し可能に構成されている。In the transfer section 1, a plurality of, for example, three support pins (not shown) capable of vertically moving up and down while supporting the edge of the glass substrate G are provided inside the mask stage 4 and inserted from the outside. Transfer means such as a transfer arm (not shown)
The glass substrate G can be transferred between the glass substrate G and the mask stage 4 described later.
【0026】また、受渡部1には、厚さ検出手段例えば
レーザ光の反射を利用して距離を測定するレーザ変位計
101が設けられている。この場合、レーザ変位計10
1は、図15(a)に示すように、ガラス基板Gの上方
から塗布されているCr層102までの距離と、ガラス
基板Gの下方からガラス基板Gの裏面までの距離とを測
定して比較演算するか、図15(b)に示すように、ガ
ラス基板Gの下方からガラス基板Gの裏面までの距離
と、Cr層102までの距離を測定して比較演算するこ
とによりガラス基板Gの厚さを検出し、CPU100に
記憶させることができる。これにより、100μm程度
の誤差があるガラス基板Gの厚さを正確に検出して、後
述する液処理装置6の液処理面62とガラス基板G表面
との間の変位情報を更に正確に検出することができる。Further, the delivery section 1 is provided with a laser displacement meter 101 for measuring a distance by utilizing a thickness detecting means such as reflection of laser light. In this case, the laser displacement meter 10
As shown in FIG. 15A, 1 is obtained by measuring the distance from the upper side of the glass substrate G to the applied Cr layer 102 and the distance from the lower side of the glass substrate G to the back surface of the glass substrate G. The distance between the lower side of the glass substrate G and the back surface of the glass substrate G and the distance to the Cr layer 102 are measured and compared, as shown in FIG. The thickness can be detected and stored in the CPU 100. Thus, the thickness of the glass substrate G having an error of about 100 μm is accurately detected, and the displacement information between the liquid processing surface 62 of the liquid processing apparatus 6 and the surface of the glass substrate G, which will be described later, is more accurately detected. be able to.
【0027】マスクステージ4は、図2に示すように、
ガラス基板Gより大きい略正方形に設けられており、載
置(保持)されるガラス基板Gの露光部分がマスクステ
ージ4に触れないように、マスクステージ4との間に僅
かに隙間を設けてガラス基板Gの2辺を載置(保持)可
能な一対の載置部41が設けられている。また、各載置
部41には、ガラス基板Gが水平方向にずれるのを防止
するためにガラス基板Gの縁部を係止する係止部42が
形成されている。The mask stage 4 is, as shown in FIG.
The glass substrate G is provided in a substantially square shape larger than the glass substrate G, and a slight gap is provided between the glass substrate G and the mask stage 4 so that the exposed portion of the glass substrate G placed (held) does not touch the mask stage 4. A pair of mounting portions 41 capable of mounting (holding) two sides of the substrate G are provided. In addition, each mounting portion 41 is formed with a locking portion 42 that locks the edge portion of the glass substrate G in order to prevent the glass substrate G from shifting in the horizontal direction.
【0028】また、マスクステージ4の上面側には、図
4に示すように、ガラス基板Gの裏面端部に当接して、
ガラス基板Gに加わる押圧力を検知する圧力センサ43
(圧力検知手段)が設けられている。圧力センサ43
は、ガラス基板Gが載置されて、ノズルステージ5の押
え板52(図5参照)との間に挟み込まれた時の圧力を
基準として、後述する現像液吸引ノズル64の吸引によ
る浮き上がりの発生を、圧力の低下によって検知するこ
とができる。また、圧力センサ43は、CPU100に
電気的に接続されており、圧力センサ43が検出した圧
力が所定値以下になると、CPU100は、後述する開
閉弁V1,V2,V3,V4を閉鎖して、現像処理を停
止させると共に、アラームを作動させるか、あるいは、
後述するサイドリンスノズル65(洗浄液供給手段)か
ら供給(吐出)されるリンス液の流量を、開閉弁V4の
調節により制御可能に構成されている。On the upper surface side of the mask stage 4, as shown in FIG.
Pressure sensor 43 for detecting the pressing force applied to the glass substrate G
(Pressure detection means) is provided. Pressure sensor 43
Is raised by the suction of the developing solution suction nozzle 64, which will be described later, based on the pressure when the glass substrate G is placed and sandwiched between the holding plate 52 of the nozzle stage 5 (see FIG. 5). Can be detected by a drop in pressure. Further, the pressure sensor 43 is electrically connected to the CPU 100, and when the pressure detected by the pressure sensor 43 becomes equal to or lower than a predetermined value, the CPU 100 closes on-off valves V1, V2, V3, V4 described later, Stop the development process and activate the alarm, or
The flow rate of the rinse liquid supplied (discharged) from a side rinse nozzle 65 (cleaning liquid supply means) described later is controllable by adjusting the opening / closing valve V4.
【0029】搬送部2は、図3に示すように、上記マス
クステージ4を受渡部1と処理部3の下方との間でX方
向に水平に移動可能な搬送機構121と、処理部3の下
方に搬送されたマスクステージ4を上下方向に移動可能
な昇降機構126(図4参照)とを具備している。As shown in FIG. 3, the transport unit 2 includes a transport mechanism 121 capable of horizontally moving the mask stage 4 between the delivery unit 1 and the lower portion of the processing unit 3 in the X direction, and the processing unit 3. The mask stage 4 conveyed downward is provided with an elevating mechanism 126 (see FIG. 4) capable of moving in the vertical direction.
【0030】搬送機構121は、例えば受渡部1から処
理部3の下方までX方向に延びるように設けられるボー
ルねじ機構122と、このボールねじ機構122の両側
に平行に設けられるマスクステージ用ガイドレール12
3と、後述する昇降機構126を上部に設けた搬送用載
置台124(図4参照)とで構成され、例えばモータや
エアシリンダ等の動力源125からの駆動力によりマス
クステージ4を図中X方向に移動させることができる。
この場合、マスクステージ4と共に移動し、ボールねじ
機構122に清浄な空気をダウンフローさせて排気口に
流すことができるノズル(図示せず)を取り付けるよう
にすれば、パーティクルがガラス基板Gに付着するのを
防止することができるので好ましい。The transfer mechanism 121 is, for example, a ball screw mechanism 122 provided so as to extend in the X direction from the transfer section 1 to the lower side of the processing section 3, and a mask stage guide rail provided parallel to both sides of the ball screw mechanism 122. 12
3 and a transfer mounting table 124 (see FIG. 4) provided with an elevating mechanism 126 (described later) on the upper portion thereof. Can be moved in any direction.
In this case, if the nozzle (not shown) that moves with the mask stage 4 and downflows clean air to the ball screw mechanism 122 and allows it to flow to the exhaust port is attached, particles adhere to the glass substrate G. This is preferable because it can be prevented.
【0031】また、昇降機構126は、図4に示すよう
に、搬送用載置台124の上部に設けられ、例えばエア
シリンダ等の駆動により、マスクステージ4を図中上下
方向に移動して、マスクステージ4をノズルステージ5
に昇降可能に形成されている。Further, as shown in FIG. 4, the elevating mechanism 126 is provided above the carrying table 124, and the mask stage 4 is moved in the vertical direction in the figure by driving an air cylinder or the like to move the mask. Stage 4 to nozzle stage 5
It is formed so that it can be raised and lowered.
【0032】また、昇降機構126の昇降部126aと
マスクステージ4の下面との間には押え力調整機構例え
ばばね127が設けられており、ガラス基板Gをノズル
ステージ5の押え板52(図5参照)に当てる押圧力を
一定にして後述する液処理装置6とガラス基板Gとの間
に常に一定の隙間を設けることができるように構成され
ている。なお、ばね127の代わりに、例えば圧力調整
用エアシリンダ等を用いてもよい。A pressing force adjusting mechanism such as a spring 127 is provided between the elevating part 126a of the elevating mechanism 126 and the lower surface of the mask stage 4, and the glass substrate G is pressed to the pressing plate 52 of the nozzle stage 5 (see FIG. 5). The pressing force applied to the glass substrate G is made constant so that a constant gap can be always provided between the liquid processing device 6 and the glass substrate G described later. Note that, instead of the spring 127, for example, a pressure adjusting air cylinder or the like may be used.
【0033】また、押え力調整機構を設ける代わりに、
昇降機構126の昇降部126a上部に、ガラス基板G
の下部を支持する伸縮可能な複数、例えば3本の支持ピ
ンを設けるようにしてもよい。この場合、それぞれの支
持ピンに高さ調整用の駆動装置を設け、液処理装置6と
ガラス基板Gとの間隔を検出可能な例えばレーザ変位計
等の間隔検出手段によって得られたデータに基づいて支
持ピンを上下し、ガラス基板Gの高さを微調整可能に形
成することができる。Further, instead of providing a pressing force adjusting mechanism,
The glass substrate G is provided above the elevating part 126a of the elevating mechanism 126.
A plurality of expandable and contractible support pins, for example, three support pins may be provided to support the lower part of the. In this case, a drive device for height adjustment is provided on each of the support pins, and based on the data obtained by the distance detecting means such as a laser displacement meter capable of detecting the distance between the liquid processing device 6 and the glass substrate G. The height of the glass substrate G can be finely adjusted by moving the support pins up and down.
【0034】処理部3は、図5に示すように、ガラス基
板Gに現像処理を行うノズルステージ5と、ガラス基板
Gに現像液を供給(吐出、塗布)する液処理装置6と、
この液処理装置6をノズルステージ5上のガラス基板G
に対し相対的に移動可能なスキャン機構7と、現像処理
後のガラス基板Gを洗浄するリンスノズル8と、現像処
理に用いられた処理液を排出するドレインパン9と、リ
ンス後のガラス基板Gを乾燥するエアブローノズル10
とで主に構成されている。As shown in FIG. 5, the processing section 3 includes a nozzle stage 5 for developing the glass substrate G, a liquid processing apparatus 6 for supplying (discharging, applying) a developing solution to the glass substrate G, and
This liquid processing device 6 is used for the glass substrate G on the nozzle stage 5.
Relative to the scanning mechanism 7, a rinse nozzle 8 for cleaning the glass substrate G after the development processing, a drain pan 9 for discharging the processing liquid used in the development processing, and the glass substrate G after the rinse processing. Air blow nozzle 10 for drying
It is mainly composed of and.
【0035】ノズルステージ5は、図5に示すように、
中央にマスクステージ4を嵌合可能な略正方形の嵌合部
51と、この嵌合部51のX方向に延びる2辺の上部に
設けられ、ガラス基板Gの上面端部を押える押え板52
とで構成されており、上述したばね127(押え力調整
機構)でガラス基板Gを押え板52に当て、液処理装置
6とガラス基板Gとの間に一定の隙間を空けて現像液を
供給し現像処理が行えるように構成されている(図6参
照)。The nozzle stage 5 is, as shown in FIG.
A substantially square fitting portion 51 capable of fitting the mask stage 4 in the center, and a holding plate 52 which is provided above the two sides of the fitting portion 51 extending in the X direction and which holds the upper end portion of the glass substrate G.
With the spring 127 (pressing force adjusting mechanism) described above, the glass substrate G is pressed against the pressing plate 52, and a developing solution is supplied with a constant gap between the liquid processing device 6 and the glass substrate G. Then, the developing process can be performed (see FIG. 6).
【0036】スキャン機構7は、図5に示すように、図
面上X方向に平行に2本設けられ液処理装置6の長手方
向の両端を支持する液処理ノズル用ガイドレール71
と、液処理装置6を嵌合し、液処理ノズル用ガイドレー
ル71上をノズル待機位置72(図中液処理装置6のあ
る位置)とガラス基板Gとの間でX方向に移動可能なス
キャンベース部76と、モータ75等の駆動手段により
駆動可能に形成されるボールねじ機構73と、スキャン
ベース部76の一端に接続され、ボールねじ機構73の
駆動力を伝えるスキャンアーム74とで構成されてい
る。As shown in FIG. 5, the scanning mechanism 7 includes two guide rails 71 for liquid processing nozzles which are provided in parallel with each other in the X direction in the drawing and which support both ends in the longitudinal direction of the liquid processing apparatus 6.
And the liquid processing apparatus 6 are fitted to each other, and a scan that can move in the X direction on the liquid processing nozzle guide rail 71 between the nozzle standby position 72 (the position where the liquid processing apparatus 6 is shown in the figure) and the glass substrate G. It is composed of a base portion 76, a ball screw mechanism 73 formed so as to be driven by a driving means such as a motor 75, and a scan arm 74 connected to one end of the scan base portion 76 and transmitting the driving force of the ball screw mechanism 73. ing.
【0037】また、スキャンベース部76は、液処理装
置6とガラス基板Gとの間隔を検出可能な間隔検出手段
例えばレーザ変位計78(図5参照)と、レーザ変位計
78の検出信号に基づいて、液処理装置6を昇降可能な
例えばモータとボールねじ機構等により構成される昇降
機構77(昇降手段)とを具備している(図示せず)。し
たがって、液処理装置6とガラス基板Gとの間に一定の
隙間例えば1mm〜50μmの隙間を精度良く形成するこ
とができる。Further, the scan base section 76 is based on a distance detecting means capable of detecting the distance between the liquid processing apparatus 6 and the glass substrate G, for example, a laser displacement meter 78 (see FIG. 5) and a detection signal of the laser displacement meter 78. In addition, the liquid processing apparatus 6 is provided with an elevating mechanism 77 (elevating means) (not shown) configured to elevate and lower, for example, a motor and a ball screw mechanism. Therefore, a constant gap, for example, a gap of 1 mm to 50 μm can be accurately formed between the liquid processing apparatus 6 and the glass substrate G.
【0038】また、スキャン機構7は、後述する制御手
段であるCPU100に電気的に接続されており、CP
U100の制御信号により、スキャンスピード及び液処
理装置6を制御可能に形成されている。Further, the scanning mechanism 7 is electrically connected to the CPU 100 which is a control means described later, and CP
The scan signal and the liquid processing apparatus 6 can be controlled by a control signal from U100.
【0039】リンスノズル8は、図5に示すように、ド
レインパン9の外側に設けられるベース部81の上端か
ら水平のY方向にノズルステージ5の中心付近まで延び
るアーム部82の先端に吊持されており、ノズルステー
ジ5の中心付近に例えば純水等のリンス液を供給(吐出
・滴下)可能に構成されている。また、ベース部81
は、図示しないエアシリンダ等の昇降手段を有してお
り、リンス処理時には、ノズルステージ5上のガラス基
板Gに衝撃を与えない高さまで下降してリンス液を供給
(吐出・滴下)し、現像処理中には、ノズルステージ5
上を移動する液処理装置6と干渉しない高さまで上昇し
て待機できるように構成されている。As shown in FIG. 5, the rinse nozzle 8 is suspended from the upper end of a base portion 81 provided outside the drain pan 9 at the tip of an arm portion 82 extending in the horizontal Y direction to the vicinity of the center of the nozzle stage 5. The rinse liquid such as pure water can be supplied (discharged / dropped) near the center of the nozzle stage 5. Also, the base portion 81
Has an elevating means such as an air cylinder (not shown), and during the rinsing process, the rinsing liquid is supplied (discharged / dropped) by descending to a height at which the glass substrate G on the nozzle stage 5 is not impacted and developed. During processing, the nozzle stage 5
It is configured so that it can stand by rising to a height at which it does not interfere with the liquid processing apparatus 6 moving above.
【0040】なお、リンスノズル8は、ベース部81の
下部に図示しないリンスノズル用ガイドレールと、ボー
ルねじ機構とを設けることにより、例えばモータ等の動
力源からの駆動力により移動可能に形成し、ガラス基板
G上をスキャンさせてリンス処理を行えるように構成す
ることもできる。The rinse nozzle 8 is formed so as to be movable by a driving force from a power source such as a motor, by providing a rinse nozzle guide rail (not shown) and a ball screw mechanism at the lower portion of the base portion 81. Alternatively, the glass substrate G may be scanned to perform the rinsing process.
【0041】ドレインパン9は、図7(a)に示すよう
に、受渡部1及び処理部3を囲う箱状に形成されてお
り、ノズルステージ5から溢流した現像液やリンス液等
の処理液(廃液)を回収する排液口91を有する排液管
路92と、スキャン機構7の液処理ノズル用ガイドレー
ル71やボールねじ機構73の下部に設けられ、これら
で発生するパーティクル等を排気する排気口93を有す
る排気管路94とを具備している。また、ドレインパン
9の底面95は、図7(b)に示すように、排液口91
が最も低くなるように傾斜して設けられており、処理液
(廃液)が排液口91に円滑に流れるように形成されて
いる。排液口91に流れた廃液は排液管路92を介して
ドレインパン9の下方に設けられる図示しない回収タン
クに回収される。As shown in FIG. 7A, the drain pan 9 is formed in a box shape surrounding the transfer section 1 and the processing section 3, and processes the developer and rinse liquid overflowing from the nozzle stage 5. A liquid discharge conduit 92 having a liquid discharge port 91 for collecting liquid (waste liquid), a liquid processing nozzle guide rail 71 of the scanning mechanism 7, and a ball screw mechanism 73 are provided below the ball screw mechanism 73. And an exhaust pipe line 94 having an exhaust port 93. The bottom surface 95 of the drain pan 9 has a drainage port 91 as shown in FIG.
Is formed so as to be the lowest, and the processing liquid (waste liquid) is formed so as to smoothly flow to the drainage port 91. The waste liquid that has flowed to the drainage port 91 is recovered via a drainage conduit 92 in a recovery tank (not shown) provided below the drain pan 9.
【0042】エアブローノズル10は、図5に示すよう
に、受渡部1と処理部3との間に設けられており、ガラ
ス基板Gが載置されたマスクステージ4を搬送機構12
1によって移動されると共に、スリット状のエアブロー
吐出口10aからリンス処理後のガラス基板Gの両面に
エアを吹き付けることにより、ガラス基板G上に残留し
ている液を吹き飛ばして乾燥することができるように構
成されている。この場合、発生するミストは装置の上部
に設けられる図示しない例えばファン等によるダウンフ
ローによって舞上がりを防止すると共に、現像液処理装
置の側面に局所排気用のダクト(図示せず)を設け、そ
こに吸引可能な構造とする方が好ましい。As shown in FIG. 5, the air blow nozzle 10 is provided between the delivery section 1 and the processing section 3, and transfers the mask stage 4 on which the glass substrate G is placed to the transfer mechanism 12.
By moving air from the slit-shaped air blow discharge port 10a to both surfaces of the rinsed glass substrate G while moving by 1, the liquid remaining on the glass substrate G can be blown off and dried. Is configured. In this case, the generated mist is prevented from rising by downflow by a fan or the like (not shown) provided on the upper part of the apparatus, and a duct (not shown) for local exhaust is provided on the side surface of the developer processing apparatus, where It is preferable to have a structure capable of suction.
【0043】なお、エアブローノズル10をガラス基板
Gの上方に水平移動可能なエアブローノズルスキャンア
ームを設け、マスクステージ4を移動させる代わりにエ
アブローノズル10を水平方向に移動してガラス基板G
にエアを吹き付けて乾燥するように構成することも可能
である。An air blow nozzle scan arm capable of moving the air blow nozzle 10 horizontally above the glass substrate G is provided, and instead of moving the mask stage 4, the air blow nozzle 10 is moved horizontally to move the glass substrate G.
It is also possible to spray air on the substrate to dry it.
【0044】次に、この発明に係る液処理装置6につい
て、図8ないし図14を用いて詳細に説明する。Next, the liquid processing apparatus 6 according to the present invention will be described in detail with reference to FIGS. 8 to 14.
【0045】◎第一実施形態
この発明の第一実施形態において、液処理装置6は、図
8に示すように、ガラス基板Gのパターン形成領域の幅
と同じかそれ以上の長さに形成されると共に、ガラス基
板表面と一定の隙間例えば50μm〜3mm、より好ま
しくは50μm〜500μmを空けて、一端から他端に
相対的にガラス基板Gと平行にスキャン(走査)移動可
能な液処理面62を有する略直方体状のノズルヘッド6
1と、液処理面62に設けられ、ガラス基板Gに帯状に
現像液を供給(吐出、塗布)する現像液供給ノズル63
(処理液供給手段)と、液処理面62に現像液供給ノズ
ル63と平行に設けられ、現像液供給ノズル63から帯
状に吐出(供給)された現像液を吸引させることで、吸
引する方向に対してガラス基板Gの表面に帯状の現像液
の流れを形成する現像液吸引ノズル64(以下に吸引ノ
ズル64という){処理液吸引手段}と、吸引ノズル6
4を挟んで現像液供給ノズル63と対向する位置に設け
られ、ガラス基板Gの表面に例えば純水等のリンス液
(洗浄液)を供給(吐出、塗布)するサイドリンスノズ
ル65(洗浄液供給手段)とを具備している。First Embodiment In the first embodiment of the present invention, as shown in FIG. 8, the liquid processing apparatus 6 is formed to have a length equal to or longer than the width of the pattern forming region of the glass substrate G. At the same time, a liquid processing surface 62 that can be moved (scanned) relatively in parallel with the glass substrate G from one end to the other end with a certain gap, for example, 50 μm to 3 mm, more preferably 50 μm to 500 μm, from the glass substrate surface. Nozzle head 6 having a substantially rectangular parallelepiped shape
1 and a developing solution supply nozzle 63 which is provided on the solution processing surface 62 and supplies (discharges and coats) the developing solution in a strip shape on the glass substrate G.
(Processing liquid supply means) and the liquid processing surface 62 are provided in parallel with the developing liquid supply nozzle 63, and by sucking the developing liquid discharged (supplied) in a strip shape from the developing liquid supply nozzle 63, in the suction direction. On the other hand, a developer suction nozzle 64 (hereinafter referred to as a suction nozzle 64) that forms a strip-shaped flow of the developer on the surface of the glass substrate G (treatment liquid suction means), and a suction nozzle 6
A side rinse nozzle 65 (cleaning liquid supplying means) which is provided at a position facing the developing solution supplying nozzle 63 with 4 interposed therebetween and which supplies (discharges and applies) a rinsing liquid (cleaning liquid) such as pure water to the surface of the glass substrate G. It has and.
【0046】この場合、液処理面62はできる限り平滑
な面、具体的には表面精度30μm以下の平滑な面に形
成する方が好ましい。このように形成すれば、現像液の
流れが円滑となり、更に均一な現像処理を施すことがで
きる。In this case, it is preferable to form the liquid treatment surface 62 as smooth as possible, specifically, a smooth surface having a surface accuracy of 30 μm or less. If formed in this way, the flow of the developing solution becomes smooth, and a more uniform developing process can be performed.
【0047】これらを使った現像処理は、ノズルヘッド
を例えば1mm/secでスキャン移動させつつ行われ
る。The development processing using these is performed while the nozzle head is scanningly moved at, for example, 1 mm / sec.
【0048】なお、現像液供給ノズル63、現像液吸引
ノズル64、サイドリンスノズル65は、独立して形成
することも可能である。The developing solution supply nozzle 63, the developing solution suction nozzle 64, and the side rinse nozzle 65 can be formed independently.
【0049】現像液供給ノズル63は、図8に示すよう
に、泡抜き等を行うため一旦現像液を収容する収容部1
1をノズルヘッド61内に有しており、現像液が貯留さ
れる現像液タンク12(現像液供給源)から現像液を供
給する現像液供給管路13と、収容部11の現像液の泡
抜きを行う泡抜き管路14(図9参照)とに接続されて
いる。As shown in FIG. 8, the developing solution supply nozzle 63 has a container 1 for temporarily containing the developing solution for removing bubbles.
1 inside the nozzle head 61, a developer supply line 13 for supplying the developer from a developer tank 12 (developer supply source) in which the developer is stored, and a bubble of the developer in the accommodating portion 11. It is connected to the bubble removing pipe line 14 (see FIG. 9) for removing bubbles.
【0050】また、現像液供給管路13には、現像液の
温度を調節する温度調節機構15(処理液温度調節手
段)と、現像液を圧送する図示しない圧送手段例えばポ
ンプと、現像液供給管路内の現像液の流量を検出する現
像液流量計130(処理液流量検出手段)とが設けられ
ており、例えば圧縮空気によって開閉を制御されるエア
オペレーションバルブ等の開閉弁V1(処理液流量調節
手段)によって現像液の流量調節が可能に形成されてい
る。Further, in the developing solution supply pipe 13, a temperature adjusting mechanism 15 (processing solution temperature adjusting means) for adjusting the temperature of the developing solution, a pressure feeding means (not shown) such as a pump for feeding the developing solution, and the developing solution supply are provided. A developing solution flow meter 130 (processing solution flow rate detecting means) for detecting the flow rate of the developing solution in the pipeline is provided, and for example, an opening / closing valve V1 (processing solution) whose opening / closing is controlled by compressed air. The flow rate of the developing solution can be adjusted by the flow rate adjusting means).
【0051】温度調節機構15は、図8に示すように、
現像液供給管路13とノズルヘッド61との接続部に設
けられ、現像液供給管路13が温度調節管路16内を通
るように形成される二重管構造となっている。また、温
度調節管路16は、現像液供給管路13内を上方から下
方へ流れる現像液に対し、ヒータ17等で温調された液
体例えば純水を循環手段例えば循環ポンプ18により温
度調節管路16内を下方から上方へ循環するように構成
されている。このように構成することにより、現像液の
温度を調節することができるので、現像液の粘度及びエ
ッチング速度(処理速度、反応速度)等を一定にするこ
とができ、更に均一な現像処理を行うことができる。The temperature adjusting mechanism 15 is, as shown in FIG.
The double tube structure is provided at the connecting portion between the developing solution supply pipe 13 and the nozzle head 61, and the developing solution supply pipe 13 is formed so as to pass through the temperature control conduit 16. The temperature adjusting pipe 16 is a temperature adjusting pipe for circulating a liquid, for example, pure water, whose temperature is regulated by a heater 17 or the like with respect to the developing liquid flowing from the upper side to the lower side in the developing liquid supply pipe 13 by means of a circulation means such as a circulation pump 18. It is configured to circulate in the passage 16 from below to above. With this configuration, the temperature of the developing solution can be adjusted, so that the viscosity of the developing solution and the etching rate (processing rate, reaction rate) can be made constant, and a more uniform developing process can be performed. be able to.
【0052】泡抜き管路14は、図9に示すように、ノ
ズルヘッド61の上部から収容部11に接続されてお
り、現像液中に気泡が混入しないように、図示しない排
気手段によって泡抜きをすることができるように構成さ
れている。As shown in FIG. 9, the defoaming pipe line 14 is connected to the accommodating portion 11 from the upper part of the nozzle head 61, and the defoaming means (not shown) removes the defoaming means so that the developing solution does not contain air bubbles. It is configured to be able to.
【0053】また、現像液供給ノズル63は、図10及
び図11に示すように、現像液供給ノズル63の長手方
向に例えば1mmピッチで等間隔に設けられる複数の供給
孔20(処理液供給孔)と、これら供給孔20の下部に
連通され現像液供給ノズル63の長手方向に設けられる
例えば1mm幅のスリット21と、スリット21の下部に
連通され現像液をガラス基板Gに供給(吐出、塗布)す
る拡開テーパ状の現像液供給口22(処理液供給口)
と、この現像液供給口22内の長手方向に設けられ、現
像液の吐出時のインパクトを低減し、均一に現像液を吐
出する整流緩衝棒、例えば円柱状の石英棒23とで構成
されている。ここでは、整流緩衝棒を石英棒23にて形
成する場合について説明したが、整流緩衝棒は、親水性
部材であれば石英以外の例えばセラミックス等で形成す
ることも可能である。As shown in FIGS. 10 and 11, the developing solution supply nozzle 63 has a plurality of supply holes 20 (processing solution supply holes) provided at equal intervals, for example, at a pitch of 1 mm in the longitudinal direction of the developing solution supply nozzle 63. ), And a slit 21 having a width of, for example, 1 mm, which is communicated with the lower part of the supply hole 20 and is provided in the longitudinal direction of the developer supply nozzle 63, and a developer which is communicated with the lower part of the slit 21 is supplied (discharged and applied) to the glass substrate G. ) Expanding taper type developer supply port 22 (processing liquid supply port)
And a straightening buffer rod, for example, a cylindrical quartz rod 23, which is provided in the developer supply port 22 in the longitudinal direction, reduces the impact at the time of discharging the developer, and uniformly discharges the developer. There is. Here, the case where the rectifying buffer rod is formed of the quartz rod 23 has been described, but the rectifying buffer rod may be formed of ceramics other than quartz as long as it is a hydrophilic member.
【0054】現像液供給ノズル63を、このように構成
することにより、供給孔20から流出する現像液は、ス
リット21で合流した後、現像液供給口22の壁面を伝
って流れる一方、石英棒23の表面で拡散させることが
できる。したがって、スリット21で供給孔による現像
液の吐出むらを防止し、石英棒23でガラス基板Gに均
一に現像液を供給(吐出、塗布)することができ、現像
液供給ノズルと後述する吸引ノズル64との間に、新し
い現像液を常時供給しつつ均一な現像液の流れを形成し
て、溶解生成物を除去しながら均一な現像処理をするこ
とができる。By constructing the developing solution supply nozzle 63 in this way, the developing solution flowing out of the supply hole 20 merges at the slit 21 and then flows along the wall surface of the developing solution supply port 22, while the quartz rod It can be diffused on the surface of 23. Therefore, the slit 21 can prevent uneven discharge of the developing solution due to the supply hole, and the quartz rod 23 can uniformly supply (discharge or apply) the developing solution to the glass substrate G. The developing solution supply nozzle and a suction nozzle described later can be used. Between 64 and 64, a uniform developing solution flow can be formed while constantly supplying a new developing solution, and uniform developing treatment can be performed while removing the dissolved products.
【0055】なお、スリット21は、図12(a)に示
すように、断面拡開テーパ状に形成されるスリット21
aとしても良く、図12(b)に示すように、現像液供
給口22との境界を滑らかな流線型に形成されるスリッ
ト21bとしてもよい。また、現像液供給口22は、図
12(c)に示すように、中心がスリット21の真下か
ら現像液供給ノズル63の移動方向前方側に偏心した位
置に形成される現像液供給口22aとしてもよい。この
ように構成すれば、現像液供給ノズル63が供給する現
像液を更に均一に供給(吐出・塗布)することができ
る。As shown in FIG. 12A, the slit 21 is a slit 21 having a tapered cross section.
12A, and as shown in FIG. 12B, the boundary with the developer supply port 22 may be a slit 21b formed in a smooth streamline shape. Further, as shown in FIG. 12C, the developing solution supply port 22 serves as a developing solution supply port 22a whose center is eccentric to the front side in the moving direction of the developing solution supply nozzle 63 from directly below the slit 21. Good. According to this structure, the developing solution supplied by the developing solution supply nozzle 63 can be more uniformly supplied (discharged / coated).
【0056】また、上記説明では、現像液供給ノズル6
3にスリット21を形成する場合について説明したが、
現像液供給ノズル63は、必ずしもこのように形成する
必要はなく、図12(d)に示すように、複数の供給孔
20(処理液供給孔)から直接ガラス基板G表面に現像
液を供給し得るように形成することも勿論可能である。In the above description, the developing solution supply nozzle 6
Although the case where the slit 21 is formed in 3 has been described,
The developing solution supply nozzle 63 does not necessarily have to be formed in this way, and as shown in FIG. 12D, the developing solution supply nozzle 63 supplies the developing solution directly to the surface of the glass substrate G from a plurality of supply holes 20 (processing solution supply holes). Of course, it is possible to form so as to obtain.
【0057】吸引ノズル64は、図11に示すように、
現像液やリンス液等の現像処理に用いられた処理液(廃
液)を吸引するスリット状の吸引口35が、現像液供給
ノズル63の液処理面62の移動方向両側に平行に設け
られている。ここで、吸引口35の長手方向の長さは、
現像液供給ノズル63両端からの現像液の染み出しを防
ぐため、現像液供給口22の長手方向の長さより長く形
成される方が好ましい。また、吸引口35のスリット
は、幅が広過ぎると吸引口35付近で現像状態が悪くな
るため、供給された現像液をサイドリンスノズル65側
に漏らさないように吸引できる範囲で可及的に狭く形成
される方が好ましい。更に、吸引ノズル64は、現像液
供給ノズル63から供給され、現像処理に供された現像
液を円滑に吸引し、均一な現像液の流れを形成するた
め、図8に示すように、吸引口35を現像液供給口22
側に向くように形成する方が好ましい。The suction nozzle 64, as shown in FIG.
Slit-shaped suction ports 35 for sucking the processing liquid (waste liquid) used for the development processing such as the developing solution and the rinsing solution are provided in parallel on both sides in the moving direction of the liquid processing surface 62 of the developing solution supply nozzle 63. . Here, the length of the suction port 35 in the longitudinal direction is
In order to prevent the developing solution from seeping out from both ends of the developing solution supply nozzle 63, it is preferable that the developing solution supply port 22 is formed longer than the length of the developing solution supply port 22 in the longitudinal direction. If the width of the slit of the suction port 35 is too wide, the developing state deteriorates near the suction port 35. Therefore, the slit of the suction port 35 can be sucked as much as possible without leaking the supplied developing solution to the side rinse nozzle 65 side. It is preferable that the width is narrow. Further, the suction nozzle 64 smoothly sucks the developing solution supplied from the developing solution supply nozzle 63 and used for the developing process to form a uniform developing solution flow. Therefore, as shown in FIG. 35 is the developer supply port 22
It is preferable to form so as to face the side.
【0058】なお、上記説明では、吸引ノズル64に、
スリット状の吸引口35を設ける場合について説明した
が、吸引ノズル64の構成はこれに限らず、例えば図1
6(a),(b)に示すように、複数の吸引孔35aを
現像液供給口22と平行かつ直線的に等間隔で設けるこ
とも可能である。この場合、吸引孔35aは、現像液供
給口22を挟んで千鳥状に設ける方が好ましい。このよ
うに構成することにより、現像液を帯状に流すだけでな
く、斜めにも流すことができるので、溶解生成物の除去
を更に確実に行うことができる。In the above description, the suction nozzle 64 is
The case where the slit-shaped suction port 35 is provided has been described, but the configuration of the suction nozzle 64 is not limited to this, and for example, FIG.
As shown in FIGS. 6 (a) and 6 (b), it is possible to provide a plurality of suction holes 35a parallel to the developer supply port 22 and linearly at equal intervals. In this case, it is preferable that the suction holes 35a are provided in a zigzag pattern with the developer supply port 22 interposed therebetween. With this configuration, the developer can be flowed not only in the form of a strip but also obliquely, so that the dissolution products can be removed more reliably.
【0059】また、図16(c)に示すように、スキャ
ン方向前方側の吸引ノズル64に複数の吸引孔35aを
設け、スキャン方向後方側の吸引ノズル64に、スリッ
ト状の吸引口35を設けてもよい。このように構成すれ
ば、液処理装置6のスキャン方向前方側では、吸引孔3
5aによって現像液を斜めにも流して溶解生成物の除去
を確実に行うと共に、スキャン方向後方側では、吸引口
35によって現像液を確実に吸引し、現像液の吸い残し
を防止することができる。As shown in FIG. 16C, a plurality of suction holes 35a are provided in the suction nozzle 64 on the front side in the scanning direction, and a slit-shaped suction port 35 is provided in the suction nozzle 64 on the rear side in the scanning direction. May be. According to this structure, the suction holes 3 are provided on the front side of the liquid processing apparatus 6 in the scanning direction.
The developer can be surely removed by flowing the developer obliquely by 5a, and the developer can be reliably sucked by the suction port 35 on the rear side in the scanning direction to prevent unsucked developer. .
【0060】また、吸引ノズル64は、図8に示すよう
に、吸引管路30を介して、吸引口35が吸引する現像
液やリンス液等の廃液の吸引量を調節可能な減圧機構例
えばエジェクタ31と、液処理装置6の移動方向前方側
及び後方側の各吸引口35それぞれの吸引量を検出可能
な吸引流量計150 (吸引量検出手段)と、吸引管路3
0の開閉を行い吸引量を調節する、例えば圧縮空気によ
って開閉を制御されるエアオペレーションバルブ等の開
閉弁V2,V3(吸引量調節手段)と、吸引した廃液を
気体と液体に分離して回収するトラップタンク32と、
このトラップタンク32の圧力を検出可能な圧力センサ
33と、トラップタンク32内に回収された廃液を回収
する廃液タンク34とで構成される吸引部200に接続
されている。この場合、吸引管路30を吸引ノズル64
の上端から吸引すると、その部分の直下の吸引口35付
近で現像液の流れが特異になり、現像処理が不均一にな
る恐れがあるため、吸引管路30は、ガラス基板Gのパ
ターン形成領域から外れる位置の上端に設けるか、又
は、吸引ノズル64の両側端に設ける方が好ましい。The suction nozzle 64 is, as shown in FIG. 8, a pressure reducing mechanism such as an ejector capable of adjusting the amount of waste liquid such as developer and rinse liquid sucked by the suction port 35 via the suction pipe line 30. 31, a suction flow meter 150 (suction amount detecting means) capable of detecting the suction amount of each of the suction ports 35 on the front side and the rear side in the moving direction of the liquid processing apparatus 6, and the suction conduit 3
Open / close 0 to adjust the suction amount, for example, open / close valves V2 and V3 (suction amount adjusting means) such as an air operation valve whose opening / closing is controlled by compressed air, and sucked waste liquid is separated into gas and liquid and collected. A trap tank 32
It is connected to a suction unit 200 including a pressure sensor 33 that can detect the pressure of the trap tank 32, and a waste liquid tank 34 that collects the waste liquid collected in the trap tank 32. In this case, the suction pipe line 30 is connected to the suction nozzle 64.
If suction is performed from the upper end of the sheet, the flow of the developing solution becomes peculiar in the vicinity of the suction port 35 immediately below that portion, and the developing process may become uneven. Therefore, the suction pipeline 30 is formed in the pattern formation region of the glass substrate G. It is preferable to provide it at the upper end of the position away from the above, or at both ends of the suction nozzle 64.
【0061】なお、上記吸引部200は、エジェクタ3
1、トラップタンク32及び圧力センサ33を用いる代
わりに、吸引口が吸引する廃液の吸引量を調節可能な吸
引手段例えば吸引ポンプを用いることも可能である。The suction unit 200 is provided with the ejector 3
1. Instead of using the trap tank 32 and the pressure sensor 33, it is also possible to use a suction means, such as a suction pump, that can adjust the suction amount of the waste liquid sucked by the suction port.
【0062】サイドリンスノズル65は、図11に示す
ように、吸引ノズル64を挟んで現像液供給ノズル63
と対向する位置に平行に設けられており、スリット状の
リンス液供給口36から液処理面62とガラス基板Gと
の間に例えば純水等のリンス液を供給可能に形成されて
いる。また、リンス液供給口36は、ガラス基板Gが吸
引ノズル64の吸引力によって浮き上がるのを防止する
ため、ガラス基板G表面にリンス液の押圧力が働くよう
に、ガラス基板G表面に対して鉛直方向にリンス液を供
給可能に形成されている。基板の浮き上がりが発生した
場合には、圧力センサ43がガラス基板Gの押圧力が低
下するのを検知して、その検知信号をCPU100に送
り、その検出値が許容値以内であれば、CPU100
は、その検出値に基づいて後述する開閉弁V4を調節
し、サイドリンスノズル65が供給(吐出)するリンス
液の流量を増加させて、浮き上がりを防止し得る圧力に
制御する。As shown in FIG. 11, the side rinse nozzles 65 sandwich the suction nozzle 64 and the developer supply nozzle 63.
The rinse liquid is provided in parallel to the position opposite to the slit-shaped rinse liquid supply port 36 and can supply a rinse liquid such as pure water between the liquid processing surface 62 and the glass substrate G. Further, the rinse liquid supply port 36 prevents the glass substrate G from being lifted up by the suction force of the suction nozzle 64, so that the rinse liquid is vertically applied to the surface of the glass substrate G so that the pressing force of the rinse liquid acts on the surface of the glass substrate G. The rinse liquid can be supplied in any direction. When the substrate is lifted, the pressure sensor 43 detects that the pressing force of the glass substrate G is reduced and sends the detection signal to the CPU 100. If the detected value is within the allowable value, the CPU 100
Adjusts an on-off valve V4, which will be described later, based on the detected value, increases the flow rate of the rinse liquid supplied (discharged) by the side rinse nozzle 65, and controls the pressure so as to prevent floating.
【0063】また、サイドリンスノズル65は、図8に
示すように、リンス液供給管路37を介してリンス液供
給源例えばリンス液供給タンク38に接続されており、
リンス液供給管路37には、現像液供給管路13と同様
に、リンス液を圧送する図示しないポンプ等の圧送手段
と、リンス液供給管路37内のリンス液の流量を検出す
るリンス液流量計140(洗浄液流量検出手段)と、圧縮
空気等によって開閉制御されるエアオペレーションバル
ブ等の開閉弁V4(洗浄液流量調節手段)とが設けられて
いる。また、少なくとも液処理装置6とガラス基板Gと
の相対移動方向(スキャン方向)前方側のサイドリンス
ノズル36aに連通するリンス液供給管路37には、リ
ンス液の温度を調節する温度調節機構39(洗浄液温度
調節手段)が設けられている。As shown in FIG. 8, the side rinse nozzle 65 is connected to a rinse liquid supply source, for example, a rinse liquid supply tank 38 via a rinse liquid supply pipe 37,
Similar to the developer supply pipeline 13, the rinse solution supply pipeline 37 includes a pumping means such as a pump (not shown) for pumping the rinse solution and a rinse solution for detecting the flow rate of the rinse solution in the rinse solution supply pipeline 37. A flow meter 140 (cleaning liquid flow rate detecting means) and an opening / closing valve V4 (cleaning liquid flow rate adjusting means) such as an air operation valve which is controlled to open and close by compressed air or the like are provided. Further, at least in the rinse liquid supply conduit 37 communicating with the side rinse nozzle 36a on the front side in the relative movement direction (scanning direction) between the liquid processing device 6 and the glass substrate G, a temperature adjusting mechanism 39 for adjusting the temperature of the rinse liquid is provided. (Cleaning liquid temperature adjusting means) is provided.
【0064】このように構成することにより、サイドリ
ンスノズル65が供給したリンス液の一部を吸引ノズル
64が吸引し、現像液が吸引ノズル64からサイドリン
スノズル65側へ広がるのを防止することができるの
で、ガラス基板G上の現像液の幅を一定にすることがで
き、現像時間を一定にして均一な現像処理を行うことが
できる。また、スキャン方向前方側のサイドリンスノズ
ル36aは、現像液を供給する前にプリウエットを行っ
て濡れ性を向上すると共に、泡の発生防止やパーティク
ルの除去をすることができる。また、スキャン方向後方
側のサイドリンスノズル36bは、ガラス基板G表面に
付着する現像液を速やかに洗浄して現像停止を行うこと
ができる。With this structure, the suction nozzle 64 sucks a part of the rinse liquid supplied by the side rinse nozzle 65 and prevents the developer from spreading from the suction nozzle 64 to the side rinse nozzle 65 side. Therefore, the width of the developing solution on the glass substrate G can be made constant, and the development time can be made constant to perform uniform development processing. Further, the side rinse nozzle 36a on the front side in the scanning direction can perform pre-wetting to improve wettability before supplying the developing solution, and at the same time, can prevent bubbles from occurring and remove particles. Further, the side rinse nozzle 36b on the rear side in the scanning direction can quickly wash the developing solution adhering to the surface of the glass substrate G to stop the development.
【0065】なお、サイドリンスノズル65は、ノズル
ヘッド61と分離して設けることも可能である。The side rinse nozzle 65 may be provided separately from the nozzle head 61.
【0066】また、液処理装置6は、CPU100(制
御手段)に電気的に接続されており、現像液流量計13
0、リンス液流量計140、吸引流量計150、圧力セ
ンサ33、レーザ変位計78(間隔検出手段)等の検出
信号と、予め記憶された情報とに基づいて、バルブV
1,V2,V3,V4、液処理面62とガラス基板Gと
の距離(間隔)、液処理装置6のスキャンスピード等を
制御可能に構成されている。Further, the liquid processing apparatus 6 is electrically connected to the CPU 100 (control means), and the developer flow meter 13 is provided.
0, the rinsing liquid flow meter 140, the suction flow meter 150, the pressure sensor 33, the laser displacement meter 78 (interval detecting means), and the like, and the valve V based on the information stored in advance.
1, V2, V3, V4, the distance (distance) between the liquid processing surface 62 and the glass substrate G, the scanning speed of the liquid processing apparatus 6 and the like can be controlled.
【0067】以下に、上記のように構成される液処理装
置6を用いた現像処理方法について説明する。The development processing method using the liquid processing apparatus 6 having the above structure will be described below.
【0068】まず、受渡部1から図示しない搬送アーム
等により搬入されたガラス基板Gは、レーザ変位計10
1によってガラス基板Gの厚さを検出し、その情報をC
PU100に記憶した後、マスクステージ4の載置部4
1に載置され、搬送機構121によってノズルステージ
5の下方に搬送される。次いで、昇降機構126によっ
て、ノズルステージ5の嵌合部51まで搬送される。First, the glass substrate G carried in from the delivery section 1 by a transfer arm or the like (not shown) is measured by the laser displacement meter 10
The thickness of the glass substrate G is detected by 1 and the information is C
After storing in the PU 100, the mounting portion 4 of the mask stage 4
1 and is transported to below the nozzle stage 5 by the transport mechanism 121. Then, it is conveyed to the fitting portion 51 of the nozzle stage 5 by the elevating mechanism 126.
【0069】ノズルステージ5では、押え板52がガラ
ス基板Gの端部2辺の上面を押さえることにより、ガラ
ス基板Gと液処理装置6の液処理面62との間に正確に
一定の隙間を形成して、ガラス基板Gを固定する。In the nozzle stage 5, the pressing plate 52 presses the upper surfaces of the two end portions of the glass substrate G so that a precise gap is accurately formed between the glass substrate G and the liquid processing surface 62 of the liquid processing apparatus 6. Then, the glass substrate G is fixed.
【0070】ノズルステージ5にガラス基板Gが固定さ
れると、CPU100の制御信号によりスキャン機構7
は、レーザ変位計101によって得られたガラス基板G
の厚みデータに基づいて、基板表面と干渉しない所定の
高さ(隙間)になるように、液処理装置6をノズル待機
位置72からスキャン開始位置まで移動する。スキャン
開始位置に達すると、ガラス基板Gに予め所定温度に温
調されたリンス液を供給(吐出、塗布)しつつスキャン
させて、ガラス基板Gの表面全体にリンス液を塗布する
(プリウエット工程)。これにより、液処理装置6とガ
ラス基板Gとの間に空気が入り込むのを防止すると共
に、現像液を供給(吐出、塗布)する前に、ガラス基板
Gを処理温度に調節することができる。When the glass substrate G is fixed to the nozzle stage 5, the scan mechanism 7 is controlled by the control signal from the CPU 100.
Is a glass substrate G obtained by the laser displacement meter 101.
The liquid processing device 6 is moved from the nozzle standby position 72 to the scan start position so that the liquid processing device 6 has a predetermined height (gap) that does not interfere with the surface of the substrate based on the thickness data. When the scanning start position is reached, the glass substrate G is scanned while being supplied (discharged and applied) with a rinse liquid whose temperature has been adjusted in advance to a predetermined temperature, and the rinse liquid is applied to the entire surface of the glass substrate G (pre-wetting step). ). Accordingly, it is possible to prevent air from entering between the liquid processing apparatus 6 and the glass substrate G, and to adjust the glass substrate G to the processing temperature before supplying (discharging or coating) the developing solution.
【0071】プリウエット工程が終了すると、液処理装
置6は、レーザ変位計101により検出されたガラス基
板Gの厚さデータに基いてスキャンし、ガラス基板Gと
液処理面62との間隔をレーザ変位計78a,78bに
より検出しながらスキャン開始位置まで戻る。検出され
た変位情報はCPU100に記憶される。When the pre-wet process is completed, the liquid processing apparatus 6 scans based on the thickness data of the glass substrate G detected by the laser displacement meter 101, and the distance between the glass substrate G and the liquid processing surface 62 is laser-scanned. It returns to the scan start position while being detected by the displacement gauges 78a and 78b. The detected displacement information is stored in the CPU 100.
【0072】なお、上記説明では、プリウエット工程終
了後に変位情報を検出しているが、変位情報の検出方法
はこれに限らず、レーザ変位計78を、液処理装置6の
進行方向後方側に設けて、プリウエット工程と同時に行
うことも可能である。In the above description, the displacement information is detected after the pre-wet process is completed. However, the method of detecting the displacement information is not limited to this, and the laser displacement meter 78 may be provided on the rear side in the traveling direction of the liquid processing apparatus 6. It is also possible to provide the same and perform it at the same time as the pre-wetting step.
【0073】液処理装置6がスキャン開始位置に戻る
と、CPU100は、液処理装置6のスキャンスピード
を現像時間が確保できる速度に制御すると共に、開閉弁
V1,V2,V3,V4の開口度を制御して、液処理面
62とガラス基板Gとの間に、一定幅の現像液の流れを
形成し得るように、現像液及びリンス液(純水)の供給
(吐出、塗布)及び吸引を開始する。When the liquid processing device 6 returns to the scan start position, the CPU 100 controls the scan speed of the liquid processing device 6 to a speed at which the developing time can be secured, and the opening degrees of the opening / closing valves V1, V2, V3, V4 are set. By controlling, supply (ejection, coating) and suction of the developing solution and the rinsing solution (pure water) are performed so that a developing solution flow having a constant width can be formed between the solution processing surface 62 and the glass substrate G. Start.
【0074】この際、図17に示すように、吸引流量が
吸引流量上限値より多いと、空気が液処理面に吸引され
る泡かみが起こり、現像液の流れが妨げられて現像処理
を行うことができなくなる。逆に吸引流量が吸引流量下
限値より少ないと、現像液が液処理面62の外へ流出し
(染み出し、溢れ)無駄を生じる。したがって、CPU
100は、吸引流量が、液処理面62から現像液を流出
せず、かつ、吸引ノズル64に空気を吸引(泡噛み)し
ない所定の値になるように、開閉弁V2,V3を制御す
る。例えば、CPU100に、図17に示すデータ(液
処理面62とガラス基板Gとの間のギャップ0.1m
m、リンス液流量2.0L/minの場合)を予め記憶
させておき、現像液の流量に応じて開閉弁V2,V3を
調節し、吸引流量を、少なくとも吸引流量上限値と吸引
流量下限値との間のバランス最適範囲内(図17の斜線
部)の値、更に好ましくは吸引流量最適値となるように
制御する。At this time, as shown in FIG. 17, when the suction flow rate is larger than the upper limit value of the suction flow rate, bubble entrainment occurs in which air is sucked onto the liquid processing surface, which obstructs the flow of the developing solution and performs the developing process. Can't do it. On the other hand, when the suction flow rate is less than the lower limit value of the suction flow rate, the developer flows out of the liquid processing surface 62 (bleeds or overflows), resulting in waste. Therefore, the CPU
Reference numeral 100 controls the on-off valves V2 and V3 so that the suction flow rate becomes a predetermined value such that the developing solution does not flow out from the liquid processing surface 62 and air is not sucked (bubble clogging) to the suction nozzle 64. For example, in the CPU 100, the data shown in FIG. 17 (gap between the liquid processing surface 62 and the glass substrate G is 0.1 m
m, rinsing liquid flow rate of 2.0 L / min) is stored in advance, the on-off valves V2 and V3 are adjusted according to the flow rate of the developing solution, and the suction flow rate is at least the suction flow rate upper limit value and the suction flow rate lower limit value. The value is within the optimum balance range (the shaded area in FIG. 17) between and, more preferably, the suction flow rate is controlled to be the optimum value.
【0075】また、CPU100は、吸引ノズル64の
吸引によってガラス基板Gが吸着されるのを防止するた
め、圧力センサ43によって検出された圧力値に基づい
て、ガラス基板Gに所定の押圧力がかかるようにリンス
液の流量(供給量)を調節する。リンス液の流量(供給
量)がこのように調節されることにより、液処理装置6
の液処理面とガラス基板G表面との距離を正確に制御し
て、更に均一な現像処理を行うことができる。Further, the CPU 100 applies a predetermined pressing force to the glass substrate G based on the pressure value detected by the pressure sensor 43 in order to prevent the glass substrate G from being sucked by the suction of the suction nozzle 64. Adjust the flow rate (supply amount) of the rinse liquid. By adjusting the flow rate (supply amount) of the rinse liquid in this manner, the liquid treatment device 6
The distance between the liquid-treated surface and the surface of the glass substrate G can be accurately controlled to perform more uniform development processing.
【0076】なお、現像液が所定幅以上に広がるのを防
止するため、CPU100によって、リンス液の供給
(吐出、塗布)及び吸引が、現像液の供給(吐出、塗
布)よりも若干早く開始するように制御してもよい。In order to prevent the developing solution from spreading over a predetermined width, the CPU 100 starts supplying (discharging, applying) and sucking the rinsing solution slightly earlier than supplying (discharging, applying) the developing solution. May be controlled as follows.
【0077】液処理装置6による現像液及びリンス液の
供給(吐出、塗布)及び吸引はスキャン開始から終了ま
で断続的に実行される。この際、ガラス基板Gと液処理
面62との隙間を図示しないレーザ変位計等の間隔検出
手段により検出し、その検出信号をCPU100に送
り、CPU100において、検出信号と予め記憶された
情報とに基づいて、現像液が吸引ノズル64の位置から
サイドリンスノズル65側に染み出さず、且つ現像液の
流速を高速に保つことができる幅になるように液処理装
置6を昇降機構77によって上下させて調整する。The supply (ejection, application) and suction of the developing solution and the rinsing solution by the solution processing device 6 are intermittently executed from the start to the end of the scan. At this time, the gap between the glass substrate G and the liquid processing surface 62 is detected by a gap detecting means such as a laser displacement meter (not shown), and the detection signal is sent to the CPU 100, and in the CPU 100, the detection signal and the information stored in advance. Based on this, the liquid processing device 6 is moved up and down by the elevating mechanism 77 so that the developer does not seep out from the position of the suction nozzle 64 to the side rinse nozzle 65 side and the flow velocity of the developer can be maintained at a high speed. To adjust.
【0078】現像処理が終了すると、リンスノズル8が
リンス液供給時にガラス基板Gに衝撃を与えない位置ま
で下降し、例えば純水等のリンス液をガラス基板G上に
供給(吐出)することによりリンス処理を行う。この場
合、リンスノズルを用いずに、現像液供給ノズル63を
ノズル待機位置72まで逆方向に移動しながら、サイド
リンスノズル65からリンス液を吐出(供給)してリン
ス処理することもできる。When the developing process is completed, the rinse nozzle 8 descends to a position where the glass substrate G is not impacted when the rinse liquid is supplied, and a rinse liquid such as pure water is supplied (discharged) onto the glass substrate G. Perform rinse treatment. In this case, the rinse solution can be discharged (supplied) from the side rinse nozzle 65 to perform the rinse process without using the rinse nozzle while moving the developer supply nozzle 63 to the nozzle standby position 72 in the opposite direction.
【0079】リンス処理が終了すると、マスクステージ
4は、昇降機構126によりノズルステージの嵌合部5
1から下降した後、搬送機構121によって受渡部に搬
送される。この際、エアブローノズル10を作動させ、
ガラス基板Gの両面にエアを吹き付けながらマスクステ
ージ4を移動して、ガラス基板G上のリンス液を吹き飛
ばし乾燥させる。なお、このときに発生するミストは、
装置のダウンフローにより排出すると共に、ドレインパ
ン9の側面に図示しない局所排気用のダクトを設けて吸
引する。When the rinsing process is completed, the mask stage 4 is moved to the fitting part 5 of the nozzle stage by the elevating mechanism 126.
After descending from 1, the sheet is conveyed by the conveying mechanism 121 to the delivery section. At this time, operate the air blow nozzle 10,
The mask stage 4 is moved while blowing air on both surfaces of the glass substrate G, and the rinse liquid on the glass substrate G is blown off and dried. The mist generated at this time is
The air is discharged by the downflow of the apparatus, and a local exhaust duct (not shown) is provided on the side surface of the drain pan 9 for suction.
【0080】マスクステージ4が、受渡部1に搬送され
ると、装置外から挿入される搬送手段例えば搬送アーム
によりガラス基板Gは搬出されて処理が終了する。When the mask stage 4 is transported to the delivery section 1, the glass substrate G is unloaded by the transport means inserted from the outside of the apparatus, for example, the transport arm, and the processing is completed.
【0081】なお、現像処理中に、現像液流量計13
0、リンス液流量計140及び吸引流量計150の検出
情報と、予め記憶された情報とに基づいて、CPU10
0が開閉弁V1,V2,V3,V4を制御するように構
成することもできる。During the development processing, the developer flow rate meter 13
0, the rinse liquid flow meter 140 and the suction flow meter 150, and the CPU 10 based on the information stored in advance.
It is also possible that 0 controls the on-off valves V1, V2, V3 and V4.
【0082】◎第二実施形態
この発明の第二実施形態は、図13(a)に示すよう
に、吸引ノズル64aを、現像液供給ノズル63の周り
を囲むように形成したものである。Second Embodiment In the second embodiment of the present invention, as shown in FIG. 13A, the suction nozzle 64a is formed so as to surround the developing solution supply nozzle 63.
【0083】このように構成することにより、現像液供
給ノズル63の両端から現像液が染み出すのを防止し、
確実に一定幅の現像液の流れを形成できる。With this structure, it is possible to prevent the developing solution from seeping out from both ends of the developing solution supply nozzle 63,
It is possible to reliably form a flow of the developer having a constant width.
【0084】また、図13(b)に示すように、吸引ノ
ズル64bを、溶解生成物の量が多く、現像液濃度の低
下が著しい現像液供給ノズル63の移動方向前方側にの
み形成し、サイドリンスノズル65を省略することも可
能である。この場合、ガラス基板G上の現像液は、現像
時間を確保できる時間経過後、リンスノズル8によりリ
ンス処理される。Further, as shown in FIG. 13B, the suction nozzle 64b is formed only on the front side in the moving direction of the developing solution supply nozzle 63 in which the amount of dissolved products is large and the concentration of the developing solution is remarkably lowered. It is also possible to omit the side rinse nozzle 65. In this case, the developing solution on the glass substrate G is rinsed by the rinsing nozzle 8 after a lapse of time that can secure the developing time.
【0085】なお、第二実施形態において、その他の部
分は上記第一実施形態と同じであるので、同一部分に
は、同一符号を付して説明は省略する。Since the other parts of the second embodiment are the same as those of the first embodiment, the same parts are designated by the same reference numerals and the description thereof will be omitted.
【0086】◎第三実施形態
この発明の第三実施形態は、液処理面62における吸引
ノズル64とサイドリンスノズル65との間に、吸引ノ
ズル64と平行で且つ吸引ノズル64側が低い段部66
を形成したものである{図14(a)参照}。Third Embodiment In the third embodiment of the present invention, a step portion 66 between the suction nozzle 64 and the side rinse nozzle 65 on the liquid processing surface 62 is parallel to the suction nozzle 64 and the suction nozzle 64 side is low.
Are formed {see FIG. 14 (a)}.
【0087】このように構成することにより、現像液供
給ノズル63と吸引ノズル64との間の隙間を小さくし
て現像液の流れを高速に保ちつつ、吸引ノズル64とサ
イドリンスノズル65との間の隙間を大きくして、リン
ス液の供給量を増やすことができるので、現像液の流れ
を確実に一定幅に保ち、均一な現像処理をすることがで
きる。With this structure, the gap between the developing solution supply nozzle 63 and the suction nozzle 64 is reduced to keep the flow of the developing solution at a high speed, and the space between the suction nozzle 64 and the side rinse nozzle 65 is increased. Since the gap can be increased and the supply amount of the rinse liquid can be increased, the flow of the developer can be surely maintained within a constant width, and uniform development processing can be performed.
【0088】また、図14(b)に示すように、液処理
面62における吸引ノズル64とサイドリンスノズル6
5との間に、ガラス基板G側に向かって隆起する吸引ノ
ズル64と平行な凸部67を形成することも可能であ
る。Further, as shown in FIG. 14B, the suction nozzle 64 and the side rinse nozzle 6 on the liquid processing surface 62.
It is also possible to form a convex portion 67 parallel to the suction nozzle 64 protruding toward the glass substrate G side between the convex portions 67 and 5.
【0089】なお、第三実施形態において、その他の部
分は上記第一実施形態と同じであるので、同一部分に
は、同一符号を付して説明は省略する。Since the other parts of the third embodiment are the same as those of the first embodiment, the same parts are designated by the same reference numerals and the description thereof will be omitted.
【0090】また、上記第一ないし第三実施形態におい
ては、この発明の液処理装置6を、レチクル用のガラス
基板Gの現像処理に適用する場合について説明したが、
これに限らず、ウエハやLCD等の現像処理に適用する
ことも勿論可能である。In the first to third embodiments described above, the case where the liquid processing apparatus 6 of the present invention is applied to the development processing of the glass substrate G for the reticle has been described.
Not limited to this, it is of course possible to apply to development processing of wafers, LCDs and the like.
【0091】[0091]
【発明の効果】以上に説明したように、この発明によれ
ば、上記のように構成されているので、以下のような効
果が得られる。As described above, according to the present invention, since it is configured as described above, the following effects can be obtained.
【0092】1)請求項1,2,3,4記載の発明によ
れば、被処理基板の表面に一定幅の処理液の流れを積極
的に形成することができるので、現像処理によって被処
理基板の表面に生成した溶解生成物を除去し、新鮮な現
像液を供給することができ、被処理基板を均一に処理す
ることができる。1) According to the invention described in claims 1, 2, 3, and 4, the flow of the processing liquid having a constant width can be positively formed on the surface of the substrate to be processed, so that the processing to be processed is performed by the developing process. The dissolved product generated on the surface of the substrate can be removed, a fresh developer can be supplied, and the substrate to be processed can be uniformly processed.
【0093】2)請求項5記載の発明によれば、処理液
吸引手段は、処理液供給手段の長手方向の長さより長く
形成されるので、液処理装置の両端から処理液が、処理
前又は処理後の被処理基板上に染み出すのを防止するこ
とができ、処理時間を一定にして均一な処理をすること
ができる。2) According to the invention described in claim 5, since the treatment liquid suction means is formed longer than the length of the treatment liquid supply means in the longitudinal direction, the treatment liquid is fed from both ends of the liquid treatment apparatus before treatment or It is possible to prevent bleeding onto the substrate to be processed after processing, and it is possible to perform uniform processing with a constant processing time.
【0094】3)請求項6記載の発明によれば、処理液
吸引手段の吸引口は、処理液供給手段側に向くように形
成されるので、処理液を円滑に吸引することができ、均
一な処理液の流れを積極的に形成して被処理基板を均一
に処理することができる。3) According to the invention described in claim 6, since the suction port of the treatment liquid suction means is formed so as to face the treatment liquid supply means side, the treatment liquid can be smoothly sucked, and the treatment liquid can be uniformly sucked. The substrate to be processed can be uniformly processed by positively forming a different flow of the processing liquid.
【0095】4)請求項7記載の発明によれば、処理液
供給手段は、処理液供給手段の長手方向に等間隔に設け
られた複数の処理液供給孔と、処理液供給孔の下部に連
通するスリットと、スリットの下部に連通する拡開テー
パ状の処理液供給口と、処理液供給口内に設けられる整
流緩衝棒と、を具備するので、スリットで処理液供給孔
による処理液の供給むら(吐出むら、塗布むら)を防止
し、整流緩衝棒で被処理基板に均一に処理液を供給(吐
出、塗布)して、処理液供給手段と処理液吸引手段との
間に均一な処理液の流れを形成することができ、被処理
基板を均一に処理することができる。4) According to the invention described in claim 7, the treatment liquid supply means comprises a plurality of treatment liquid supply holes provided at equal intervals in the longitudinal direction of the treatment liquid supply means, and the treatment liquid supply holes are provided below the treatment liquid supply holes. Since the slits are communicated with each other, the processing liquid supply port having an expanded taper shape that communicates with the lower portion of the slit, and the rectifying buffer rod provided in the processing liquid supply port are provided, the processing liquid supply hole supplies the processing liquid through the processing liquid supply hole. Prevents unevenness (unevenness of discharge, unevenness of application), uniformly supplies (discharges and applies) the processing liquid to the substrate to be processed by the rectifying buffer rod, and performs uniform processing between the processing liquid supply means and the processing liquid suction means A liquid flow can be formed, and the substrate to be processed can be uniformly processed.
【0096】5)請求項8記載の発明によれば、処理液
供給手段は、処理液の温度を調節可能な処理液温度調節
手段を具備することにより、処理液の粘度や処理速度
(反応速度)等を一定にして、被処理基板に均一な処理
をすることができる。5) According to the invention of claim 8, the treatment liquid supply means is provided with a treatment liquid temperature adjusting means capable of adjusting the temperature of the treatment liquid, so that the treatment liquid viscosity and the treatment speed (reaction speed) It is possible to uniformly process the substrate to be processed by keeping the above values constant.
【0097】6)請求項9記載の発明によれば、ノズル
ヘッドの液処理面に、処理液吸引手段を挟んで処理液供
給手段と対向する位置に設けられ、被処理基板の表面に
洗浄液を供給する洗浄液供給手段を具備するので、洗浄
液供給手段が供給した洗浄液を処理液吸引手段が吸引す
ることにより、処理液が処理液吸引手段から洗浄液供給
手段側へ広がるのを防止して、被処理基板上の処理液の
幅を一定にすることができ、処理時間を一定にして均一
な処理をすることができる。6) According to the invention described in claim 9, the cleaning liquid is provided on the surface of the substrate to be processed, which is provided on the liquid processing surface of the nozzle head so as to face the processing liquid supply means with the processing liquid suction means interposed therebetween. Since the cleaning liquid supply unit for supplying the cleaning liquid is provided, the processing liquid suction unit sucks the cleaning liquid supplied by the cleaning liquid supply unit to prevent the processing liquid from spreading from the processing liquid suction unit to the cleaning liquid supply unit side. The width of the processing liquid on the substrate can be made constant, and the processing time can be made constant to perform uniform processing.
【0098】7)請求項10,11記載の発明によれ
ば、液処理面における処理液吸引手段と洗浄液供給手段
との間に、処理液吸引手段と平行で且つ処理液吸引手段
側が低い段部が形成されるか、又は、被処理基板側に向
かって隆起する処理液吸引手段と平行な凸部が形成され
るので、更に確実に処理液の幅を一定にして、処理時間
を一定にして均一な処理をすることができる。7) According to the invention described in claims 10 and 11, a step portion between the processing liquid suction means and the cleaning liquid supply means on the liquid processing surface is parallel to the processing liquid suction means and has a low processing liquid suction means side. Or a convex portion parallel to the processing liquid suction means that rises toward the substrate to be processed is formed, so that the width of the processing liquid can be more reliably kept constant and the processing time can be kept constant. Uniform processing can be performed.
【0099】8)請求項12記載の発明によれば、洗浄
液供給手段は、洗浄液の温度を調節可能な洗浄液温度調
節手段を具備するので、被処理基板や処理液の温度を一
定にすることができ、処理液の粘度や処理速度(反応速
度)等を更に確実に一定にして、被処理基板に均一な処
理をすることができる。8) According to the twelfth aspect of the present invention, since the cleaning liquid supply means includes the cleaning liquid temperature adjusting means capable of adjusting the temperature of the cleaning liquid, the temperature of the substrate to be processed or the processing liquid can be kept constant. Thus, the viscosity of the processing liquid, the processing speed (reaction speed), and the like can be more surely made constant, and the substrate to be processed can be uniformly processed.
【0100】9)請求項13記載の発明によれば、処理
液供給手段が供給する処理液の流量を調節可能な処理液
流量調節手段と、処理液供給手段が供給する処理液の流
量を検出する処理液流量検出手段と、処理液吸引手段が
吸引する処理液の流量を調節可能な吸引量調節手段と、
処理液吸引手段が吸引する処理液の流量を検出する吸引
量検出手段と、処理液流量検出手段及び吸引量検出手段
の検出情報と、予め記憶された情報とに基づいて、処理
液流量調節手段及び吸引量調節手段を制御する制御手段
と、を具備するので、処理液の流れを、被処理基板の表
面に生成した溶解生成物を除去し得る流速に制御するこ
とができ、被処理基板に均一な処理をすることができ
る。9) According to the thirteenth aspect of the present invention, the processing liquid flow rate adjusting means capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply means and the processing liquid flow rate supplied by the processing liquid supply means are detected. Processing liquid flow rate detecting means, and suction amount adjusting means capable of adjusting the flow rate of the processing liquid sucked by the processing liquid suction means,
Based on the suction amount detecting means for detecting the flow rate of the processing liquid sucked by the processing liquid suction means, the detection information of the processing liquid flow rate detecting means and the suction amount detecting means, and the information stored in advance, the processing liquid flow rate adjusting means. And a control means for controlling the suction amount adjusting means, so that the flow of the processing liquid can be controlled at a flow rate at which the dissolution product generated on the surface of the substrate to be processed can be removed. Uniform processing can be performed.
【0101】10)請求項14記載の発明によれば、処
理液供給手段が供給する処理液の流量を調節可能な処理
液流量調節手段と、処理液供給手段が供給する処理液の
流量を検出する処理液流量検出手段と、処理液吸引手段
が吸引する処理液の流量を調節可能な吸引量調節手段
と、処理液吸引手段が吸引する処理液の流量を検出する
吸引量検出手段と、洗浄液供給手段が供給する洗浄液の
流量を調節可能な洗浄液流量調節手段と、洗浄液供給手
段が供給する洗浄液の流量を検出する洗浄液流量検出手
段と、処理液流量検出手段、吸引量検出手段及び洗浄液
流量検出手段の検出情報と、予め記憶された情報とに基
づいて、処理液流量調節手段、吸引量調節手段及び洗浄
液流量調節手段を制御する制御手段と、を具備するの
で、処理液の幅を確実に一定にして、現像時間を均一に
することができる。10) According to the invention described in claim 14, the processing liquid flow rate adjusting means capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply means, and the processing liquid flow rate supplied by the processing liquid supply means are detected. Processing liquid flow rate detecting means, suction amount adjusting means capable of adjusting the flow rate of the processing liquid sucked by the processing liquid suction means, suction amount detecting means for detecting the flow rate of the processing liquid sucked by the processing liquid suction means, and cleaning liquid A cleaning liquid flow rate adjusting unit capable of adjusting the flow rate of the cleaning liquid supplied by the supply unit, a cleaning liquid flow rate detecting unit detecting the flow rate of the cleaning liquid supplied by the cleaning liquid supply unit, a processing liquid flow rate detecting unit, a suction amount detecting unit and a cleaning liquid flow rate detecting unit. The width of the processing liquid is ensured because the processing liquid is provided with the control means for controlling the processing liquid flow rate adjusting means, the suction amount adjusting means and the cleaning liquid flow rate adjusting means based on the detection information of the means and the information stored in advance. Set constant, it is possible to make uniform the development time.
【0102】11)請求項15記載の発明によれば、制
御手段は、処理液吸引手段が吸引する処理液の流量が、
液処理面から処理液を流出せず、かつ、処理液吸引手段
に空気を吸引しない所定値となるように、吸引流量調節
手段を制御するので、処理液を有効に利用できると共
に、均一な処理液の流れを形成し、均一な液処理をする
ことができる。11) According to a fifteenth aspect of the invention, the control means is such that the flow rate of the processing liquid sucked by the processing liquid suction means is
Since the suction flow rate adjusting means is controlled so that the processing liquid does not flow out from the liquid processing surface and the air is not sucked into the processing liquid suction means, the processing liquid can be effectively used and uniform treatment can be performed. A liquid flow can be formed and a uniform liquid treatment can be performed.
【0103】12)請求項16記載の発明によれば、ノ
ズルヘッドの液処理面と被処理基板表面との距離を検出
する間隔検出手段と、ノズルヘッドを昇降可能な昇降手
段とを具備し、制御手段は、間隔検出手段の検出信号
と、予め記憶された情報とに基づいて、昇降手段を制御
するので、ノズルヘッドの液処理面と被処理基板との間
の隙間を確実に一定にすることができ、被処理基板を更
に均一に処理することができる。12) According to the sixteenth aspect of the present invention, there is provided an interval detecting means for detecting the distance between the liquid processing surface of the nozzle head and the surface of the substrate to be processed, and an elevating means for elevating the nozzle head. The control means controls the elevating means on the basis of the detection signal of the interval detection means and the information stored in advance, so that the gap between the liquid processing surface of the nozzle head and the substrate to be processed is surely made constant. Therefore, the substrate to be processed can be processed more uniformly.
【図1】この発明の液処理装置を適用した現像処理装置
を示す概略構成図である。FIG. 1 is a schematic configuration diagram showing a development processing apparatus to which the liquid processing apparatus of the present invention is applied.
【図2】マスクステージを示す概略斜視図である。FIG. 2 is a schematic perspective view showing a mask stage.
【図3】搬送部を示す概略平面図である。FIG. 3 is a schematic plan view showing a transport unit.
【図4】昇降機構を示す概略正面図である。FIG. 4 is a schematic front view showing a lifting mechanism.
【図5】この発明の液処理装置を含む処理部を示す概略
平面図である。FIG. 5 is a schematic plan view showing a processing section including the liquid processing apparatus of the present invention.
【図6】ノズルステージ上の被処理基板の状態を示す概
略斜視図である。FIG. 6 is a schematic perspective view showing a state of a substrate to be processed on a nozzle stage.
【図7】現像処理装置のドレインパンの構成を示す概略
平面図(a)及びそのI−I線に沿う概略断面図(b)
である。FIG. 7 is a schematic plan view showing the configuration of a drain pan of the development processing apparatus (a) and a schematic sectional view taken along line I-I thereof (b).
Is.
【図8】この発明の液処理装置の構成を示す概略断面図
である。FIG. 8 is a schematic cross-sectional view showing the configuration of the liquid processing apparatus of the present invention.
【図9】この発明の液処理装置を示す概略斜視図であ
る。FIG. 9 is a schematic perspective view showing the liquid processing apparatus of the present invention.
【図10】この発明における処理液供給手段の要部を示
す概略断面図(a)及びそのII−II線に沿う概略断
面図(b)である。FIG. 10 is a schematic cross-sectional view (a) showing a main part of a processing liquid supply means in the present invention and a schematic cross-sectional view (b) taken along line II-II thereof.
【図11】この発明における処理液供給手段の構成を示
す概略断面図(a)及びこの発明における液処理面を示
す概略平面図(b)である。FIG. 11 is a schematic cross-sectional view (a) showing a configuration of a processing liquid supply means in the present invention and a schematic plan view (b) showing a liquid processing surface in the present invention.
【図12】この発明における別の処理液供給手段の要部
を示す概略断面図である。FIG. 12 is a schematic sectional view showing a main part of another processing liquid supply means according to the present invention.
【図13】この発明における第二実施形態の液処理装置
の液処理面を示す概略平面図である。FIG. 13 is a schematic plan view showing a liquid processing surface of a liquid processing apparatus according to a second embodiment of the present invention.
【図14】この発明における第三実施形態の液処理装置
の構成を示す概略断面図である。FIG. 14 is a schematic cross-sectional view showing the configuration of the liquid processing apparatus according to the third embodiment of the present invention.
【図15】この発明における厚さ検出手段を示す概略断
面図である。FIG. 15 is a schematic sectional view showing a thickness detecting means in the present invention.
【図16】この発明における処理液吸引手段の異なる構
成を示す概略平面図である。FIG. 16 is a schematic plan view showing a different configuration of the processing liquid suction means in the present invention.
【図17】処理液供給手段の流量と処理液吸引手段の吸
引流量との関係を示すグラフである。FIG. 17 is a graph showing the relationship between the flow rate of the processing liquid supply unit and the suction flow rate of the processing liquid suction unit.
G ガラス基板(被処理基板) V1 開閉弁(処理液流量調節手段) V2,V3 開閉弁(吸引量調節手段) V4 開閉弁(洗浄液流量調節手段) 6 液処理装置 15 温度調節機構(処理液温度調節手段) 20 供給孔(処理液供給孔) 21 スリット 22 現像液供給口(処理液供給口) 23 石英棒(整流緩衝棒) 35 吸引口 39 温度調節機構(洗浄液温度調節手段) 61 ノズルヘッド 62 液処理面 63 現像液供給ノズル(処理液供給手段) 64 現像液吸引ノズル(処理液吸引手段) 64a,64b 現像液吸引ノズル(処理液吸引手段) 65 サイドリンスノズル(洗浄液供給手段) 66 段部 67 凸部 77 昇降機構(昇降手段) 100 CPU(制御手段) 130 現像液流量計(処理液流量検出手段) 140 リンス液流量計(洗浄液流量検出手段) 150 吸引流量計(吸引量検出手段) G glass substrate (substrate to be processed) V1 open / close valve (processing liquid flow rate adjusting means) V2, V3 open / close valve (suction amount adjusting means) V4 open / close valve (cleaning liquid flow rate adjusting means) 6 liquid treatment equipment 15 Temperature control mechanism (processing liquid temperature control means) 20 Supply hole (Treatment liquid supply hole) 21 slits 22 Developer supply port (processing liquid supply port) 23 Quartz rod (rectifying buffer rod) 35 Suction port 39 Temperature control mechanism (cleaning liquid temperature control means) 61 nozzle head 62 Liquid processing surface 63 developer supply nozzle (processing liquid supply means) 64 developer suction nozzle (processing liquid suction means) 64a, 64b Developer suction nozzle (treatment liquid suction means) 65 Side rinse nozzle (cleaning liquid supply means) 66 steps 67 convex 77 Lifting mechanism (lifting means) 100 CPU (control means) 130 developer flow meter (processing liquid flow rate detection means) 140 Rinse liquid flow meter (cleaning liquid flow rate detection means) 150 Suction flow meter (suction amount detection means)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) G03F 7/30 501 H01L 21/30 564Z (72)発明者 大石 幸太郎 東京都港区赤坂五丁目3番6号TBS放送 センター東京エレクトロン株式会社内 (72)発明者 西屋 憲 東京都港区赤坂五丁目3番6号TBS放送 センター東京エレクトロン株式会社内 Fターム(参考) 2H025 AA18 AB14 AB16 DA20 EA04 2H096 AA25 AA28 CA13 GA22 4F041 AA02 AA06 AB01 BA05 BA13 BA35 BA48 BA54 BA57 CA02 CA17 CA23 4F042 AA02 AA07 AB00 BA08 BA12 BA13 BA19 CA01 CB08 CB24 DD33 DD39 DD47 DF07 DF15 5F046 JA01 JA24 JA27 LA03 LA13 LA19 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 7 Identification code FI theme code (reference) G03F 7/30 501 H01L 21/30 564Z (72) Inventor Kotaro Oishi 5-3-6 Akasaka, Minato-ku, Tokyo No. TBS Broadcast Center Tokyo Electron Co., Ltd. (72) Inventor Ken Nishiya 5-3-6 Akasaka, Minato-ku, Tokyo TBS Broadcast Center Tokyo Electron Co., Ltd. F-term (reference) 2H025 AA18 AB14 AB16 DA20 EA04 2H096 AA25 AA28 CA13 GA22 4F041 AA02 AA06 AB01 BA05 BA13 BA35 BA48 BA54 BA57 CA02 CA17 CA23 4F042 AA02 AA07 AB00 BA08 BA12 BA13 BA19 CA01 CB08 CB24 DD33 DD39 DD47 DF07 DF15 5F046 JA01 JA24 JA27 LA03 LA13 LA19
Claims (16)
相対的に平行移動可能な液処理面を有するノズルヘッド
と、 上記液処理面に設けられ、上記被処理基板表面に帯状に
処理液を供給する処理液供給手段と、 上記液処理面に処理液供給手段と平行に設けられ、上記
処理液供給手段から供給された処理液を吸引すると共
に、上記被処理基板の表面に処理液の流れを形成する処
理液吸引手段と、を具備することを特徴とする液処理装
置。1. A nozzle head having a liquid processing surface which can be moved in parallel with a plate-shaped substrate to be processed with a certain gap therebetween, and a nozzle head which is provided on the liquid processing surface and has a band shape on the surface of the substrate to be processed. A processing liquid supply means for supplying a processing liquid and a processing liquid supply means provided on the liquid processing surface in parallel with the processing liquid supply means for sucking the processing liquid supplied from the processing liquid supply means and processing the surface of the substrate to be processed. And a treatment liquid suction means for forming a flow of the liquid.
対移動方向前方側に形成されることを特徴とする液処理
装置。2. The liquid processing apparatus according to claim 1, wherein the processing liquid suction means is formed at least on the front side in the relative movement direction of the processing liquid supply means.
の前後に形成されることを特徴とする液処理装置。3. The liquid processing apparatus according to claim 1, wherein the processing liquid suction means is formed before and after a relative movement direction of the processing liquid supply means.
うに形成されることを特徴とする液処理装置。4. The liquid processing apparatus according to claim 1, wherein the processing liquid suction means is formed so as to surround the processing liquid supply means.
処理装置において、 上記処理液吸引手段は、処理液供給手段の長手方向の長
さより長く形成されることを特徴とする液処理装置。5. The liquid processing apparatus according to claim 1, wherein the processing liquid suction means is formed longer than the length of the processing liquid supply means in the longitudinal direction. .
処理装置において、 上記処理液吸引手段の吸引口は、処理液供給手段側に向
くように形成されることを特徴とする液処理装置。6. The liquid processing apparatus according to any one of claims 1 to 4, wherein the suction port of the processing liquid suction means is formed to face the processing liquid supply means side. apparatus.
処理装置において、 上記処理液供給手段は、処理液供給手段の長手方向に等
間隔に設けられた複数の処理液供給孔と、上記処理液供
給孔の下部に連通するスリットと、上記スリットの下部
に連通する拡開テーパ状の処理液供給口と、上記処理液
供給口内に設けられる整流緩衝棒と、を具備することを
特徴とする液処理装置。7. The liquid processing apparatus according to claim 1, wherein the processing liquid supply unit has a plurality of processing liquid supply holes provided at equal intervals in a longitudinal direction of the processing liquid supply unit. A slit communicating with a lower portion of the treatment liquid supply hole, a treatment liquid supply port having an expanding taper shape communicating with a lower portion of the slit, and a rectification buffer rod provided in the treatment liquid supply port are provided. Liquid processing equipment.
処理装置において、 上記処理液供給手段は、処理液の温度を調節可能な処理
液温度調節手段を具備することを特徴とする液処理装
置。8. The liquid processing apparatus according to claim 1, wherein the processing liquid supply means includes processing liquid temperature adjusting means capable of adjusting the temperature of the processing liquid. Processing equipment.
処理装置において、 上記ノズルヘッドの液処理面に、処理液吸引手段を挟ん
で処理液供給手段と対向する位置に設けられ、被処理基
板の表面に洗浄液を供給する洗浄液供給手段を具備する
ことを特徴とする液処理装置。9. The liquid processing apparatus according to claim 1, wherein the liquid processing surface of the nozzle head is provided at a position facing the processing liquid supply means with the processing liquid suction means sandwiched therebetween. A liquid processing apparatus comprising: a cleaning liquid supply means for supplying a cleaning liquid to the surface of a processing substrate.
との間に、上記処理液吸引手段と平行で且つ処理液吸引
手段側が低い段部が形成されることを特徴とする液処理
装置。10. The liquid processing apparatus according to claim 9, wherein a step portion between the processing liquid suction means and the cleaning liquid supply means on the liquid processing surface is parallel to the processing liquid suction means and has a low processing liquid suction means side. A liquid processing apparatus, wherein a liquid is formed.
との間に、被処理基板側に向かって隆起する上記処理液
吸引手段と平行な凸部が形成されることを特徴とする液
処理装置。11. The liquid processing apparatus according to claim 9, wherein, between the processing liquid suction means and the cleaning liquid supply means on the liquid processing surface, it is parallel to the processing liquid suction means protruding toward the substrate to be processed. A liquid processing apparatus, wherein a convex portion is formed.
において、 上記洗浄液供給手段は、洗浄液の温度を調節可能な洗浄
液温度調節手段を具備することを特徴とする液処理装
置。12. The liquid processing apparatus according to claim 10 or 11, wherein the cleaning liquid supply means includes cleaning liquid temperature adjusting means capable of adjusting the temperature of the cleaning liquid.
の液処理装置において、 上記処理液供給手段が供給する処理液の流量を調節可能
な処理液流量調節手段と、 上記処理液供給手段が供給する処理液の流量を検出する
処理液流量検出手段と、 上記処理液吸引手段が吸引する処理液の流量を調節可能
な吸引量調節手段と、 上記処理液吸引手段が吸引する処理液の流量を検出する
吸引量検出手段と、 上記処理液流量検出手段及び吸引量検出手段の検出情報
と、予め記憶された情報とに基づいて、上記処理液流量
調節手段及び吸引量調節手段を制御する制御手段と、を
具備することを特徴とする液処理装置。13. The liquid processing apparatus according to claim 1, wherein the processing liquid flow rate adjusting means capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply means, and the processing liquid supply means. Processing liquid flow rate detecting means for detecting the flow rate of the processing liquid to be supplied, suction amount adjusting means for adjusting the flow rate of the processing liquid sucked by the processing liquid suction means, and flow rate of the processing liquid sucked by the processing liquid suction means Control for controlling the processing liquid flow rate adjusting means and the suction amount adjusting means on the basis of the suction amount detecting means for detecting the processing liquid, the detection information of the processing liquid flow rate detecting means and the suction amount detecting means, and information stored in advance. A liquid processing apparatus comprising:
の液処理装置において、 上記処理液供給手段が供給する処理液の流量を調節可能
な処理液流量調節手段と、 上記処理液供給手段が供給する処理液の流量を検出する
処理液流量検出手段と、 上記処理液吸引手段が吸引する処理液の流量を調節可能
な吸引量調節手段と、 上記処理液吸引手段が吸引する処理液の流量を検出する
吸引量検出手段と、 上記洗浄液供給手段が供給する洗浄液の流量を調節可能
な洗浄液流量調節手段と、 上記洗浄液供給手段が供給する洗浄液の流量を検出する
洗浄液流量検出手段と、 上記処理液流量検出手段、吸引量検出手段及び洗浄液流
量検出手段の検出情報と、予め記憶された情報とに基づ
いて、上記処理液流量調節手段、吸引量調節手段及び洗
浄液流量調節手段を制御する制御手段と、を具備するこ
とを特徴とする液処理装置。14. The liquid processing apparatus according to claim 9, wherein the processing liquid flow rate adjusting means capable of adjusting the flow rate of the processing liquid supplied by the processing liquid supply means, and the processing liquid supply means. Processing liquid flow rate detecting means for detecting the flow rate of the processing liquid to be supplied, suction amount adjusting means for adjusting the flow rate of the processing liquid sucked by the processing liquid suction means, and flow rate of the processing liquid sucked by the processing liquid suction means Suction amount detecting means for detecting the flow rate, cleaning liquid flow rate adjusting means capable of adjusting the flow rate of the cleaning liquid supplied by the cleaning liquid supply means, cleaning liquid flow rate detecting means for detecting the flow rate of the cleaning liquid supplied by the cleaning liquid supply means, and the processing described above. Based on the detection information of the liquid flow rate detecting means, the suction amount detecting means, and the cleaning liquid flow rate detecting means, and the information stored in advance, the processing liquid flow rate adjusting means, the suction amount adjusting means, and the cleaning liquid flow rate adjusting means. Liquid processing apparatus characterized by comprising a control means for controlling the means.
において、 上記制御手段は、上記処理液吸引手段が吸引する処理液
の流量が、上記液処理面から処理液を流出せず、かつ、
上記処理液吸引手段に空気を吸引しない所定値となるよ
うに、上記吸引流量調節手段を制御可能に形成されるこ
とを特徴とする液処理装置。15. The liquid processing apparatus according to claim 13 or 14, wherein the control means causes the processing liquid to be sucked by the processing liquid suction means so that the processing liquid does not flow out from the liquid processing surface, and
A liquid processing apparatus, wherein the suction flow rate adjusting means is controllably formed so as to have a predetermined value that does not suck air into the processing liquid suction means.
載の液処理装置において、 上記ノズルヘッドの液処理面と被処理基板表面との距離
を検出する間隔検出手段と、 上記ノズルヘッドを昇降可能な昇降手段とを具備し、 上記制御手段は、上記間隔検出手段の検出信号と、予め
記憶された情報とに基づいて、上記昇降手段を制御する
ことを特徴とする液処理装置。16. The liquid processing apparatus according to claim 13, wherein an interval detecting unit that detects a distance between the liquid processing surface of the nozzle head and the surface of the substrate to be processed, and the nozzle head can be moved up and down. A liquid processing apparatus, wherein the control means controls the elevating means based on a detection signal from the interval detecting means and information stored in advance.
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