JP2004039756A - Semiconductor device and method and apparatus of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the circumferential area of an interposer substrate from warping in the side of semiconductor element due to contraction of an anisotropic conductive film running out from the circumferential area of semiconductor element when it is hardened at the time of mounting semiconductor element on the interposer substrate via the anisotropic conductive film. <P>SOLUTION: An attracting groove 21 is formed to the region corresponding to the external side of the circumferential area of the semiconductor element 16 of a stage 14 for the mounting and the semiconductor element 16 is mounted on the interposer substrate 11 with the anisotropic conductive film 15 while the interposer substrate 11 is attracted with this attracting groove 21. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of manufacturing a semiconductor device, a manufacturing apparatus, and a semiconductor device, and more particularly to a method, a manufacturing apparatus, and a semiconductor device of a semiconductor device in which a semiconductor element is mounted on a substrate.
[0002]
[Prior art]
In order to reduce the size of semiconductor devices, there is a tendency to provide semiconductor devices that do not use an insulating package. In this type of semiconductor device, a semiconductor element formed of a bare chip is directly mounted on an interposer substrate, and electrodes such as bumps of the semiconductor element are connected to conductive electrodes of the interposer substrate. Therefore, when an electronic circuit is formed by such a semiconductor device, an interposer substrate on which a semiconductor element is mounted is arranged on a motherboard, and the electrodes of the semiconductor element are connected to the electrodes of the motherboard via wiring means for connection of the interposer substrate. Will be done.
[0003]
An example of a method for manufacturing this type of semiconductor device will be described with reference to FIG. Here, first, the interposer substrate 1 is prepared. The interposer substrate 1 has a dimension slightly larger than the semiconductor element 6 mounted thereon, and the wiring pattern 2 and the connection lands 3 are formed in advance. Then, such an interposer substrate 1 is arranged on the stage 4 as shown in FIG. 10B, and a connection fixing material, for example, an anisotropic conductive film 5 is joined to the upper side of the interposer substrate 1. Then, the semiconductor element 6 composed of a bare chip is mounted from above, and the semiconductor element 6 is heated and pressed from above, so that the bumps 7 of the semiconductor element 6 are interposed via the anisotropic conductive film 5 and the wiring pattern of the interposer substrate 1. 2 is electrically connected.
[0004]
[Problems to be solved by the invention]
As described above, in the conventional semiconductor device using the interposer substrate, the bump 7 is formed on the external lead electrode of the semiconductor element 6 and the anisotropic conductive film 5 is attached on the interposer substrate 1 as shown in FIG. . Then, the semiconductor element 6 having the bumps 7 thereon is temporarily placed by flip chip. Finally, the anisotropic conductive film 5 is hardened by applying pressure and heat from the upper surface of the semiconductor element 6 opposite to the surface on which the bumps 7 are formed, thereby performing flip-chip connection.
[0005]
Here, as shown in FIG. 11, the anisotropic conductive film 5 is hardened in a state where it slightly protrudes from the periphery of the semiconductor element 6. The anisotropic conductive film is composed of a resin and conductive particles as described later, and contracts as the anisotropic conductive film 5 cures. Therefore, there is a problem that the interposer substrate 1 is deformed such that the peripheral portion is lifted up near the peripheral edge of the semiconductor element 6 as shown in FIG.
[0006]
The deformation such as the lifting of the peripheral portion of the interposer substrate 1 accompanying the curing of the anisotropic conductive film 5 as described above is a factor that hinders the manufacture of a thin semiconductor device. In particular, when the portion on the periphery of the interposer substrate 1 where the connection lands 3 are formed is lifted upward, the conductive pattern formed on the back surface of the raised portion is not correctly connected to the motherboard. This causes trouble when mounting the semiconductor device. Further, when stacking such semiconductor devices in multiple layers, there is a possibility that the curved deformation of the peripheral portion of the interposer substrate 1 may cause a trouble.
[0007]
The present invention has been made in view of such problems, and a method of manufacturing a semiconductor device in which deformation of a substrate due to shrinkage during curing of a connection fixing material such as an anisotropic conductive film is prevented. , A manufacturing apparatus, and a semiconductor device.
[0008]
[Means for Solving the Problems]
A major invention relating to a method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device in which a substrate is arranged on a stage and a semiconductor element is mounted on the substrate via an adhesive fixing material.
A region near the periphery of the semiconductor element on the substrate and corresponding to a portion where the adhesive fixing material protrudes from the periphery of the semiconductor element is attracted to the stage side to cure the adhesive fixing material. The present invention relates to a method for manufacturing a semiconductor device.
[0009]
Here, the adhesive fixing material may be formed of an anisotropic conductive film, and the semiconductor element may be fixed to the substrate by the anisotropic conductive film, and an electrode of the semiconductor element may be connected to an electrode of the substrate. . Further, it is preferable that a suction groove is formed in a region corresponding to a portion where the adhesive fixing material protrudes from a peripheral edge of the semiconductor element on the stage, and the substrate is sucked toward the stage through the suction groove.
[0010]
A major invention related to a semiconductor device manufacturing apparatus is a semiconductor element manufacturing apparatus in which a substrate is arranged on a stage and a semiconductor element is mounted on the substrate via an adhesive fixing material.
The present invention relates to an apparatus for manufacturing a semiconductor device, comprising: suction means for suctioning, to the stage side, a region near the periphery of the semiconductor element on the substrate and corresponding to a portion where the adhesive fixing material protrudes from the periphery of the semiconductor element. is there.
[0011]
Here, the suction means may be a suction groove formed in a region corresponding to a portion on the stage where the adhesive fixing material protrudes from a peripheral edge of the semiconductor element. Further, it is preferable that the suction groove is an elongated groove positioned laterally with respect to electrodes arranged substantially along the vicinity of a side edge of the semiconductor element.
[0012]
The main invention relating to a semiconductor device is a semiconductor device in which a semiconductor element is mounted on a substrate via an adhesive fixing material,
A region near the periphery of the semiconductor element of the substrate and corresponding to a portion where the adhesive fixing material protrudes from the periphery of the semiconductor element is curved such that the surface on which the semiconductor element is mounted is concave. The present invention relates to a semiconductor device characterized by the above.
[0013]
Here, the adhesive fixing material is an anisotropic conductive film, and the semiconductor element is fixed to the substrate by the anisotropic conductive film, and an electrode of the semiconductor element is connected to an electrode of the substrate. Is preferable. Further, it is preferable that the semiconductor device is manufactured by the manufacturing method of the present invention. Further, it is preferable that the semiconductor device is manufactured by the invention of the manufacturing apparatus.
[0014]
In a preferred embodiment of the invention included in the present application, in a semiconductor device manufactured by using a semiconductor element with bumps, an interposer substrate, and a fixing material for flip chip connection, the method for curing the fixing material for flip chip connection simultaneously with flip chip connection Then, by partially deforming the interposer substrate except for the flip-chip connection portion, thereby curing the flip-chip connection fixing material at the same time as flip-chip connection, the interposer substrate is cured after the flip-chip connection fixing material is cured. The present invention relates to a semiconductor device in which deformation of the semiconductor device is reduced as much as possible, and a method for manufacturing such a semiconductor device.
[0015]
According to such an embodiment, the warpage of the region of the interposer substrate from which the connection fixing material protrudes is suppressed, so that connection can be easily performed in mounting on a motherboard or three-dimensional mounting by lamination. Further, since the peripheral portion of the interposer substrate is prevented from being deformed, the yield of the electronic circuit device is increased, and the reliability is improved. This also contributes to a reduction in the cost of the semiconductor device and the electronic circuit device.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described with reference to the illustrated embodiments. This embodiment relates to a method of manufacturing a semiconductor device in which a semiconductor element 16 made of a bare chip is mounted on an interposer substrate 11 shown in FIGS. 3 and 4 via an anisotropic conductive film 15, a manufacturing apparatus, and a semiconductor device. Here, as shown in FIGS. 3 and 4, a wiring pattern 12 and a connection land 13 are formed on the interposer substrate 11 in the vicinity of the periphery thereof in advance.
[0017]
In order to mount the semiconductor element 16 on such an interposer substrate 11, a stage 14 as shown in FIGS. 1, 2 and 4 is used. The stage 14 is formed of a rectangular plate, and for example, elongated suction grooves 21 are formed on both sides thereof in parallel with each other. Further, a suction hole 22 for sucking the air in the suction groove 21 is formed so as to communicate with the suction groove 21. The suction holes 22 are connected to vacuum suction means.
[0018]
The interposer substrate 11 is mounted on such a stage 14 as shown in FIGS. 3 and 4B. As shown in FIG. 4A, an anisotropic conductive film 15 is bonded on the interposer substrate 11 in advance. On the other hand, a bump 17 is mounted on the semiconductor element 16 above the electrode. Then, the semiconductor element 16 having such bumps 17 is heated and pressed against the interposer substrate 11 via the anisotropic conductive film 15 to produce a semiconductor device as shown in FIG.
[0019]
In such a semiconductor device, the electrodes of the semiconductor element 16 are connected to the wiring patterns 12 of the interposer substrate 11 via the bumps 17.
[0020]
In the manufacture of such a semiconductor device, particularly when the semiconductor element 16 is connected to the interposer substrate 11 via the anisotropic conductive film 15, the lower surface of the interposer substrate 11 is formed by the suction groove 21 formed in the stage 14. In particular, the anisotropic conductive film 15 is cured while sucking downward the portion of the interposer substrate 11 where the connection lands 13 are formed on the side of the semiconductor element 16 where the bumps 17 are formed. I have to.
[0021]
By thus hardening the anisotropic conductive film 15 while sucking the interposer substrate 11 by the suction groove 21, deformation of the peripheral portion of the interposer substrate 11 is prevented. That is, when the anisotropic conductive film 15 is cured, the portion protruding from the peripheral portion of the semiconductor element 16 shrinks, so that the peripheral portion of the interposer substrate 11, particularly the side of the connection land 13 shown in FIG. It is easy to deform so that the part is warped. However, such deformation is reliably prevented by the suction and fixing by the suction groove 21 of the stage 14 described above.
[0022]
Here, the connection between the semiconductor element 16 and the interposer substrate 11 is made by an anisotropic conductive film (ACF Anisotropic conductive film) 15 shown in FIGS. The anisotropic conductive film 15 is made of a matrix resin such as an epoxy resin as shown in FIG. 6, and has conductive particles 25 dispersed therein. Here, each of the conductive particles 25 has a spherical shape as shown in FIG. 7, a metal layer 26 made of metal plating is formed on the outer periphery thereof, and a thin insulating film 27 is further formed to cover the outer peripheral surface thereof. I have.
[0023]
When heating and pressurization are performed with such an anisotropic conductive film 15 interposed between the semiconductor element 16 and the interposer substrate 11, as shown in FIG. The conductive particles 25 are crushed by the height of these bumps 17 and 12 between the wiring pattern 12 of the substrate 11 and the outer insulating coating 27 is destroyed and the metal layer 26 is exposed. As a result, electrical connection between the bumps 17 of the semiconductor element 16 and the wiring patterns 12 of the interposer substrate 11 by the conductive particles 25 is achieved. On the other hand, in a region where the bump 17 and the wiring pattern 12 do not exist, the gap between the semiconductor element 16 and the interposer substrate 11 is large. 27 prevents a short circuit. That is, conduction in regions other than the resin bumps 17 and the wiring patterns 12 is prevented, thereby achieving selective electrical connection.
[0024]
As described above, the anisotropic conductive film 15 joins the semiconductor element 16 to the interposer substrate 11, conducts the bumps 17 and the wiring patterns 12 of both, and insulates the regions where the bumps 17 and the wiring patterns 12 are not formed. The three functions are simultaneously achieved. That is, when thermocompression bonding is performed in a state where the anisotropic conductive film 15 is sandwiched between the semiconductor element 16 and the interposer substrate 11, the anisotropic conductive film 15 has conductivity in the thickness direction, and has conductivity in the surface direction. It exhibits electrical anisotropy with insulation properties. As a result, permanent bonding between the opposing bumps 17 and the wiring pattern 12, conduction between the bumps 17 and the wiring pattern 12, and insulation between the semiconductor element 16 and the interposer substrate 11 in a region where the bump 17 and the wiring pattern 12 are not formed are achieved. Achieved at the same time.
[0025]
As described above, in the present embodiment, the bumps 17 are formed on the external lead electrodes of the semiconductor element 16 as shown in FIGS. On the other hand, an anisotropic conductive film 15 is pasted on the interposer substrate 11. Then, with the interposer substrate 11 mounted on the stage 14, the semiconductor element 16 having the bumps 17 is temporarily placed by flip chip. Thereafter, as shown in FIG. 4B, the anisotropic conductive film 15 is cured by applying heat and pressure from the surface of the semiconductor element 16 opposite to the surface on which the bumps 17 are formed, and flip-chip connection is performed.
[0026]
At the time of such flip-chip connection, the suction groove 21 is formed in advance on the stage 14 of the flip-chip bonder so that only the portion corresponding to the protruding portion of the anisotropic conductive film 15 on the periphery of the semiconductor element 16 is suctioned. In addition, a portion corresponding to the portion where the anisotropic conductive film 15 protrudes is sucked downward by the suction hole 22 and the suction groove 21 as shown in FIG. 9 so that the portion of the interposer substrate 11 becomes convex downward. That is, the upper surface on which the semiconductor element 16 is mounted is deformed so as to be concave. Then, even if the anisotropic conductive film 15 contracts when the anisotropic conductive film 15 cures, the contraction can be offset by the reaction force of the elastic restoring force due to the deformation of the curved interposer substrate 11, The portion on the side end side of the substrate 11 where the connection lands 13 are formed is prevented from being deformed upward.
[0027]
When the interposer substrate 11 is locally sucked by the suction groove 21 of the stage 14 and the width of the suction groove 21 is deformed so as to protrude downward as shown in FIG. A downwardly curved rib is formed at the bottom. As shown in FIG. 3, such ribs are formed to be long along the peripheral portion of the semiconductor element 16 where the bumps 17 are formed. In order to provide rigidity to the peripheral portion of the interposer substrate 11, In addition, the interposer substrate 11 is hardly deformed, and the substrate shape can be made flatter.
[0028]
Further, by sucking the interposer substrate 11 in a region corresponding to the protruding portion of the anisotropic conductive film 15, the interposer substrate 11 can be positively deformed. The deformation amount of the interposer substrate 11 can be adjusted by changing the suction pressure of the suction groove 21 of the stage 14 and the depth and the dug width of the suction groove 21, and the flatness of the entire interposer substrate 11 can be adjusted. Can be achieved.
[0029]
In such a semiconductor device, in particular, when the semiconductor element 16 has a size of 15.0 × 10.5 × 0.1 mm, for example, the bump 17 of the semiconductor element 16 has an electrode formed thereon with a diameter of 50 mm. The bump may be １００100 μm and 10-50 μm in height. Further, an anisotropic conductive film 15 is temporarily attached on the interposer substrate 11. At this time, the interposer substrate 11 may be a flexible substrate or a rigid substrate, but the problem of deformation of the interposer substrate 11 particularly occurs when the thickness of the substrate 11 is 100 μm or less. Therefore, when the semiconductor element 16 is bonded to an interposer substrate of 100 μm or less by flip-chip mounting, it is preferable to form the suction groove 21 on the stage 14 and suck the semiconductor device 16, thereby preventing the deformation of the interposer substrate 11. Such bonding is performed by applying heat and pressure from the upper surface of the semiconductor element 16 to cure the anisotropic conductive film 15 and connecting the semiconductor element 16 to the interposer substrate 11 by flip-chip connection. At this time, the temperature applied to the semiconductor element 16 is 100 to 250 ° C., and the pressure is about 10 to 20 kgf. The heating and pressurizing time is about 3 to 60 s.
[0030]
The shape of the suction groove 21 formed on the stage 14 for performing the flip-chip connection in this manner has a depth of, for example, 100 μm, a width of 1 mm, and a suction pressure of 30 mHg. In this case, the position of the suction groove 21 may be such that only the two short sides of the semiconductor element 16 are sucked. By such suction, the deformation amount of the interposer substrate 11 whose peripheral portion has been deformed up to about 200 μm can be suppressed to about 50 μm, and the deformation is suppressed to 1/3 or less. Has been confirmed by experiment.
[0031]
Although the invention of the present application has been described with reference to the illustrated embodiments, the invention of the present application is not limited to the above embodiments, and various modifications can be made within the technical idea of the invention included in the present application. For example, in the above embodiment, an anisotropic conductive film is used for joining the semiconductor element 16 and the interposer substrate 11, but the connection fixing material in the present invention is not necessarily limited to the anisotropic conductive film, but may be an ACP (Anisotopic). It is also possible to use another connection fixing material such as a conductive paste, an NCF (Non conductive film), or an NCP (Non conductive paste). In addition, the position of the suction groove formed on the stage 14 or the deformation position of the interposer substrate 11 is not limited to the above-described embodiment. It may be formed.
[0032]
【The invention's effect】
A main invention relating to a method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device in which a substrate is arranged on a stage and a semiconductor element is mounted on the substrate via an adhesive fixing material. A region near the portion where the adhesive fixing material protrudes from the periphery of the semiconductor element is attracted to the stage side to cure the adhesive fixing material.
[0033]
Therefore, according to such a method of manufacturing a semiconductor device, deformation of the substrate due to shrinkage when the adhesive fixing material is cured can be prevented by adsorbing to the stage side, and particularly, deformation of the substrate is effectively prevented. Is done.
[0034]
An invention related to a semiconductor device manufacturing apparatus is a semiconductor device manufacturing apparatus in which a substrate is arranged on a stage and a semiconductor element is mounted on the substrate via an adhesive fixing material. There is provided suction means for sucking, to the stage side, a region corresponding to a portion where the adhesive fixing material protrudes from the periphery of the semiconductor element.
[0035]
Therefore, according to such an apparatus for manufacturing a semiconductor element, there is provided an apparatus for manufacturing a semiconductor element in which the substrate is reliably prevented from being deformed when the adhesive fixing material is hardened by the suction means that is suctioned to the stage side.
[0036]
A main invention relating to a semiconductor device is a semiconductor device in which a semiconductor element is mounted on a substrate via an adhesive fixing material, wherein the adhesive fixing material protrudes from the periphery of the semiconductor element in the vicinity of the peripheral portion of the semiconductor element on the substrate. The region corresponding to the portion is curved such that the surface on which the semiconductor element is mounted is concave.
[0037]
Therefore, according to such a semiconductor device, the elastic restoring force of the deformation of the curved portion of the substrate makes it possible to cancel the shrinkage due to the curing of the adhesive fixing material, and at the same time, the curved portion of the substrate The rigidity of the substrate is increased by the rib effect, and the deformation of the substrate is more reliably prevented.
[Brief description of the drawings]
FIG. 1 is a plan view of a stage for manufacturing a semiconductor device.
FIG. 2 is a sectional view taken along line AA in FIG.
FIG. 3 is a plan view showing a state where a semiconductor element is mounted on an interposer substrate on a stage.
FIG. 4 is an essential part longitudinal cross sectional view showing an operation of mounting a semiconductor element on an interposer substrate on a stage.
5 is a longitudinal sectional view of the semiconductor device manufactured by the method shown in FIG. 4, and is a sectional view taken along the line BB in FIG. 3;
FIG. 6 is an enlarged sectional view of an anisotropic conductive film.
FIG. 7 is an enlarged cross-sectional view of resin particles dispersed in an anisotropic conductive film.
FIG. 8 is an enlarged sectional view showing an operation of electrical connection by an anisotropic conductive film.
FIG. 9 is an enlarged sectional view of a main part showing a principle of a suction operation by a suction groove of a stage.
FIG. 10 is a vertical sectional view showing a main part of a conventional method for manufacturing a semiconductor device.
FIG. 11 is a longitudinal sectional view of a semiconductor device manufactured by a conventional method.
[Explanation of symbols]
1 {interposer substrate, 2} wiring pattern, 3} connection land, 4 # stage, 5 # anisotropic conductive film, 6 # semiconductor element (bare chip), 7 # bump, 11 # Interposer substrate, 12 wiring pattern, 13 connection land, 14 stage, 15 anisotropic conductive film, 16 semiconductor element (bare chip), 17 bump, 21 suction groove, 22 ‥‥ suction hole, 25 ‥‥ conductive particles, 26 ‥‥ metal layer, 27 ‥‥ insulation coating

Claims (10)

In a method of manufacturing a semiconductor device in which a substrate is arranged on a stage and a semiconductor element is mounted on the substrate via an adhesive fixing material,
A region near the periphery of the semiconductor element on the substrate and corresponding to a portion where the adhesive fixing material protrudes from the periphery of the semiconductor element is attracted to the stage side to cure the adhesive fixing material. A method for manufacturing a semiconductor device. The adhesive fixing material is composed of an anisotropic conductive film, the semiconductor element is fixed to the substrate by the anisotropic conductive film, and an electrode of the semiconductor element is connected to an electrode of the substrate. 2. The method for manufacturing a semiconductor device according to claim 1, wherein 2. A suction groove is formed in a region corresponding to a portion where the adhesive fixing material protrudes from a peripheral edge of the semiconductor element on the stage, and the substrate is suctioned to the stage through the suction groove. 13. The method for manufacturing a semiconductor device according to claim 1. In a semiconductor device manufacturing apparatus in which a substrate is arranged on a stage and a semiconductor element is mounted on the substrate via an adhesive fixing material,
An apparatus for manufacturing a semiconductor device, comprising: suction means for sucking, on the stage side, a region near the periphery of the semiconductor element on the substrate, the area corresponding to a portion where the adhesive fixing material protrudes from the periphery of the semiconductor element. 5. The apparatus according to claim 4, wherein the suction means is a suction groove formed in a region corresponding to a portion of the stage on which the adhesive fixing material protrudes from a peripheral edge of the semiconductor element. 5. The semiconductor device according to claim 4, wherein said at least one suction groove is an elongated groove located on a side of an electrode arranged substantially along a side edge of said semiconductor element. In a semiconductor device in which a semiconductor element is mounted on a substrate via an adhesive fixing material,
A region near the periphery of the semiconductor element of the substrate and corresponding to a portion where the adhesive fixing material protrudes from the periphery of the semiconductor element is curved such that the surface on which the semiconductor element is mounted is concave. A semiconductor device characterized by the above-mentioned. The adhesive fixing material is an anisotropic conductive film, and the semiconductor element is fixed to the substrate by the anisotropic conductive film, and an electrode of the semiconductor element is connected to an electrode of the substrate. The semiconductor device according to claim 7, wherein A semiconductor device manufactured by the manufacturing method according to claim 1. A semiconductor device manufactured by the manufacturing apparatus according to claim 4.

Images