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JP2004193241A - Method of dividing semiconductor wafer - Google Patents

Method of dividing semiconductor wafer Download PDF

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JP2004193241A
JP2004193241A JP2002357680A JP2002357680A JP2004193241A JP 2004193241 A JP2004193241 A JP 2004193241A JP 2002357680 A JP2002357680 A JP 2002357680A JP 2002357680 A JP2002357680 A JP 2002357680A JP 2004193241 A JP2004193241 A JP 2004193241A
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semiconductor wafer
adhesive film
dividing
back surface
semiconductor
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JP4471565B2 (en
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Akihito Kawai
章仁 川合
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Disco Corp
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Disco Abrasive Systems Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)

Abstract

【課題】半導体ウエーハが先ダイシングによって分割された個々の半導体チップにダイボンディング用の接着フィルムを容易に装着することができる半導体ウエーハの分割方法を提供する。
【解決手段】半導体ウエーハ２の表面からストリート２１に沿って所定の深さの分割溝２３を形成する分割溝形成工程と、該分割溝２３が形成された半導体ウエーハ２の表面に保護部材４を貼着する保護部材貼着工程と、該半導体ウエーハ２の裏面を研削して該裏面に該分割溝２３を表出させ個々の半導体チップ２０に分離する分割溝表出工程と、該半導体チップ２０に分離された半導体ウエーハ２の裏面にダイポンディング用の接着フィルム６を装着する接着フィルム装着工程と、該半導体チップ２０に分離された半導体ウエーハ２の裏面に装着された接着フィルム６に引張力を付与し、該接着フィルム６を分割溝２３に沿って破断する接着フィルム破断工程とを含む。
【選択図】 図１２An object of the present invention is to provide a method for dividing a semiconductor wafer in which an adhesive film for die bonding can be easily mounted on individual semiconductor chips obtained by dividing a semiconductor wafer by pre-dicing.
A dividing groove forming step of forming a dividing groove having a predetermined depth from a surface of a semiconductor wafer along a street, and a protective member is formed on a surface of the semiconductor wafer on which the dividing groove is formed. A protective member attaching step of attaching, a dividing groove exposing step of grinding the back surface of the semiconductor wafer 2 to expose the dividing grooves 23 on the back surface, and separating the semiconductor chips into individual semiconductor chips 20; An adhesive film mounting step of mounting an adhesive film 6 for die bonding on the back surface of the separated semiconductor wafer 2, and applying a tensile force to the adhesive film 6 mounted on the back surface of the semiconductor wafer 2 separated from the semiconductor chip 20. And breaking the adhesive film 6 along the dividing groove 23.
[Selection diagram] FIG.

Description

【０００１】
【発明の属する技術分野】
本発明は、表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に回路が形成された半導体ウエーハを個々の半導体チップに分割する半導体ウエーハの分割方法に関する。
【０００２】
【従来の技術】
例えば、半導体デバイス製造工程においては、略円板形状である半導体ウエーハの表面に格子状に形成されたストリート（切断ライン）によって区画された多数の領域にＩＣ、ＬＳＩ等の回路を形成し、該回路が形成された各領域をストリートに沿って分割することにより個々の半導体チップを製造している。半導体ウエーハを分割する分割装置としては一般にダイシング装置が用いられており、このダイシング装置は厚さが２０μｍ程度の切削ブレードによって半導体ウエーハを切削する。このようにして分割された半導体チップは、パッケージングされて携帯電話やパソコン等の電気機器に広く利用されている。
【０００３】
分割された半導体チップは、その裏面にポリイミド樹脂等で形成された厚さ２０〜４０μｍのダイアタッチフィルムと称するダイボンディング用の接着フィルムが装着され、このダイアタッチフィルムを介して半導体チップを支持するフレームに加熱することによりボンディングされる。半導体チップの裏面にダイボンディング用の接着フィルムであるダイアタッチフィルムを装着する方法としては、半導体ウエーハの裏面にダイアタッチフィルムを装着し、その後、半導体ウエーハの表面に形成されたストリートに沿って切削ブレードによりダイアタッチフィルムと共に切削することにより、裏面にダイアタッチフィルムが装着された半導体チップを形成している。そして、半導体チップを半導体チップを支持するフレームにボンディングする際には、既に半導体チップの裏面にダイアタッチフィルムが装着されているので、ボンディング作業が円滑に行われる。
【０００４】
近年、携帯電話やパソコン等の電気機器はより軽量化、小型化が求められており、より薄い半導体チップが要求されている。より薄く半導体チップを分割する技術として所謂先ダイシングと称する分割技術が実用化されている。この先ダイシングは、半導体ウエーハの表面からストリートに沿って所定の深さ（半導体チップの仕上がり厚さに相当する）の分割溝を形成し、その後、表面に分割溝が形成された半導体ウエーハの裏面を研削して分割溝を表出させ個々の半導体チップに分離する技術であり、半導体チップの厚さを５０μｍ以下に加工することが可能である。（例えば、特許文献１参照。）
【０００５】
【特許文献１】
特開昭６２−４３４１号公報
【０００６】
【発明が解決しようとする課題】
而して、先ダイシングによって半導体ウエーハを個々の半導体チップに分割する場合には、ダイボンディング用の接着フィルムであるダイアタッチフィルムを前もって半導体ウエーハの裏面に装着することができず、半導体チップを半導体チップを支持するフレームにボンディングする際には、半導体チップとフレームとの間にボンド剤を挿入しながら行わなければならず、ボンディング作業を円滑に実施することができないという問題がある。
【０００７】
本発明は上記事実に鑑みてなされたものであり、その主たる技術課題は、半導体ウエーハが先ダイシングによって分割された個々の半導体チップにダイボンディング用の接着フィルムを容易に装着することができる半導体ウエーハの分割方法を提供することにある。
【０００８】
【課題を解決するための手段】
上記主たる技術課題を解決するため、本発明によれば、表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に回路が形成された半導体ウエーハを個々の半導体チップに分割する方法であって、
半導体ウエーハの表面から該ストリートに沿って所定の深さの分割溝を形成する分割溝形成工程と、
該分割溝が形成された半導体ウエーハの表面に保護部材を貼着する保護部材貼着工程と、
表面に該保護部材が貼着された半導体ウエーハの裏面を研削して該表面に該分割溝を表出させ個々の半導体チップに分離する分割溝表出工程と、
該半導体チップに分離された半導体ウエーハの裏面にダイポンディング用の接着フィルムを装着する接着フィルム装着工程と、
該半導体チップに分離された半導体ウエーハの裏面に装着された接着フィルムに引張力を付与し、該接着フィルムを分割溝に沿って破断する接着フィルム破断工程と、を含む、
ことを特徴とする半導体ウエーハの分割方法が提供される。
【０００９】
また、本発明によれば、表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に回路が形成された半導体ウエーハを個々の半導体チップに分割する方法であって、
半導体ウエーハの表面から該ストリートに沿って所定の深さの分割溝を形成する分割溝形成工程と、
該分割溝が形成された半導体ウエーハの表面に保護部材を貼着する保護部材貼着工程と、
表面に該保護部材が貼着された半導体ウエーハの裏面を研削して該表面に該分割溝を表出させ個々の半導体チップに分離する分割溝表出工程と、
該半導体チップに分離された半導体ウエーハの裏面にダイポンディング用の接着フィルムを装着する接着フィルム装着工程と、
裏面に該接着フィルムが装着された半導体ウエーハの該接着フィルム側に伸長可能な保護粘着テープを貼着するとともに、半導体ウエーハの表面に貼着されている保護部材を剥離する保護粘着テープ貼着工程と、
該保護粘着テープを拡張して該接着フィルムに引張力を付与し、該接着フィルムを該分割溝に沿って破断する接着フィルム破断工程と、
破断された該接着フィルムが貼着されている該半導体チップを該保護粘着テープから離脱する半導体チップ離脱工程と、を含む、
ことを特徴とする半導体ウエーハの分割方法が提供される。
【００１０】
上記接着フィルム装着工程は、半導体チップに分離された半導体ウエーハの裏面に該接着フィルムを載置し、８０〜２００°Ｃの温度で加熱しつつ該接着フィルムを半導体ウエーハの裏面に押圧して装着する。上記保護粘着テープは、環状の支持フレームの内側開口部を覆うように装着されている。また、上記保護粘着テープは外的刺激によって粘着力が低下する性質を有しており、上記半導体チップ離脱工程において接着フィルムが貼着されている半導体チップを保護粘着テープから離脱する際には外的刺激を付与して保護粘着テープの粘着力を低下せしめることが望ましい。
【００１１】
【発明の実施の形態】
以下、本発明による半導体ウエーハの分割方法の好適な実施形態について、添付図面を参照して詳細に説明する。
【００１２】
図１には、本発明に従って分割される半導体ウエーハの斜視図が示されている。図１に示す半導体ウエーハ２は、表面２ａに複数のストリート２１が格子状に形成されているとともに該複数のストリート２１によって区画された複数の領域に回路２２が形成されている。この半導体ウエーハ２を個々の半導体チップに分割する分割方法について、図２乃至図１３を参照して説明する。
半導体ウエーハ２を個々の半導体チップに分割するには、先ず半導体ウエーハ２の表面２ａに形成されたストリート２１に沿って所定深さ（各半導体チップの仕上がり厚さに相当する深さ）の分割溝を形成する（分割溝形成工程）。この分割溝形成工程は、図２に示すようにダイシング装置として一般に用いられている切削装置３を用いることができる。即ち、切削装置３は、吸引保持手段を備えたチャックテーブル３１と、切削ブレード３２１を備えた切削手段３２を具備している。この切削装置３のチャックテーブル３１上に半導体ウエーハ２を表面２ａを上にして保持し、切削手段３２の切削ブレード３２１を回転しつつチャックテーブル３１を矢印Ｘで示す方向に切削送りするとともに、矢印Ｙで示す方向にストリート間隔毎に切削手段３２を割り出し送りすることによって、ストリート２１に沿って分割溝２３を形成する。この分割溝２３は、図３に示すように分割される各半導体チップの仕上がり厚さに相当する深さに設定されている。
【００１３】
上述した分割溝形成工程により半導体ウエーハ２の表面２ａにストリート２２に沿って所定深さの分割溝２３を形成したら、図４の（ａ）、図４の（ｂ）に示すように半導体ウエーハ２の表面側（回路２２が形成されている側）に研削用の保護部材４を貼着する（保護部材貼着工程）。
【００１４】
次に、上述したように表面に保護部材５を貼着した半導体ウエーハ２の裏面２ｂを研削し分割溝２３を裏面２ｂに表出させて個々の半導体チップに分割する（分割溝表出工程）。この分割溝表出工程は、図５に示すようにチャックテーブル５１と研削砥石５２１を備えた研削手段５２を具備する研削装置５によって行われる。即ち、チャックテーブル５１上に半導体ウエーハ２の裏面２ｂを上にして保持し、例えば、チャックテーブル５１を３００ｒｐｍで回転しつつ、研削手段５２の研削砥石５２を６０００ｒｐｍで回転せしめて半導体ウエーハ２の裏面２ｂに接触することにより研削し、図６に示すように分割溝２３が裏面２ｂに表出するまで研削する。このように分割溝２３が表出するまで研削することによって、図７に示すように半導体ウエーハ２は個々の半導体チップ２０に分離される。なお、分離された複数の半導体チップ２０は、その表面に保護部材４が貼着されているので、バラバラにはならず半導体ウエーハ２の形態が維持されている。
【００１５】
上述した分割溝表出工程によって半導体ウエーハ２は個々の半導体チップ２０に分離したならば、図８の（ａ）、（ｂ）に示すように半導体ウエーハ２の裏面２ｂにダイアタッチフィルムと称するダイボンディング用の接着フィルム６を装着する（接着フィルム装着工程）。この接着フィルム装着工程は、個々の半導体チップ２０に分離された半導体ウエーハ２の裏面２ｂにポリイミド樹脂によって厚さが２０〜４０μｍに形成された接触フィルム６を載置し、８０〜２００°Ｃの温度で加熱しつつ接着フィルム６を半導体ウエーハ２の裏面２ｂに押圧して装着する。なお、ダイアタッチフィルムと称するダイボンディング用の接着フィルム６は、比較的小さい引張力を作用することによって容易に破断する。このように個々の半導体チップ２０に分離されてはいるが半導体ウエーハ２の形態が維持されている状態でその裏面２ｂに接着フィルム６を装着するので、半導体チップ２０の裏面に接着フィルム６を容易に装着することができる。
【００１６】
上述した接着フィルム装着工程において個々の半導体チップ２０に分離された半導体ウエーハ２の裏面２ｂに接着フィルム６が装着されたならば、半導体ウエーハ２の裏面２ｂに装着された接着フィルム６側に伸長可能な保護粘着テープを貼着するとともに、半導体ウエーハ２の表面２ａに貼着されている保護部材４を剥離する（保護粘着テープ貼着工程）。この保護粘着テープ貼着工程は、図９に示すように環状の支持フレーム７の内側開口部を覆うように装着された一般にダイシングテープとして用いられている塩化ビニールテープ等の合成樹脂テープからなる伸長可能な保護粘着テープ８の上面に半導体ウエーハ２の裏面２ｂに装着された接着フィルム６側を貼着する。そして、半導体ウエーハ２の表面２ａに貼着されている保護部材４を剥離する。なお、伸長可能な保護粘着テープ８としては、紫外線等の外的刺激によって粘着力が低下する性質を有するＵＶテープが用いられている。
【００１７】
保護粘着テープ貼着工程において支持フレーム７に装着された伸長可能な保護粘着テープ８の上面に半導体ウエーハ２の裏面２ｂに装着された接着フィルム６を貼着したならば、保護粘着テープ８を拡張して接着フィルム６に引張力を付与し、接着フィルム６を分割溝に沿って破断する（接着フィルム破断工程）。この接着フィルム破断工程は、図１０および図１１に示す保護粘着テープ拡張装置９によって実施される。ここで、保護粘着テープ拡張装置９について説明する。図示の保護粘着テープ拡張装置９は、上記支持フレーム７を載置する載置面９１１が形成された円筒状のベース９１と、該ベース９１内に同心的に配設され支持フレーム７に装着された保護粘着テープ８を積極的に広げるための拡張手段９２を具備している。拡張手段９２は、上記保護粘着テープ８における複数個の半導体チップ２０が存在する領域８１を支持する筒状の拡張部材９２１を具備している。この拡張部材９２１は、図示しない昇降手段によって図１１の（ａ）に示す基準位置と該基準位置から上方の図１１の（ｂ）に示す拡張位置の間を上下方向（円筒状のベース９１の軸方向）に移動可能に構成されている。なお、図示の実施形態においては拡張部材９２１内には、紫外線照射ランプ９３が配設されている。
【００１８】
次に、上述した保護粘着テープ拡張装置９を用いて実施する接着フィルム破断工程について、図１０および図１２を参照して説明する。
上述したように支持フレーム７に装着された伸長可能な保護粘着テープ８の上面に支持された裏面２ｂに接着フィルム６が装着されている半導体ウエーハ２（個々の半導体チップ２０に分離された半導体ウエーハ２の裏面２ｂに装着された接着フィルム６が保護粘着テープ８の上面に貼着されている）は、図１０および図１１（ａ）に示すように支持フレーム７が円筒状のベース９１の載置面９１１上に載置され、クランプ９４によってベース９１に固定される。次に、図１１（ｂ）に示すように上記保護粘着テープ８における複数個の半導体チップ２０が存在する領域８１を支持した拡張手段９２の拡張部材９２１を図示しない昇降手段によって図１１（ａ）の基準位置から上方の図１１の（ｂ）に示す拡張位置まで移動する。この結果、伸長可能な保護粘着テープ８は拡張されるので、この保護粘着テープ８に貼着されている接着フィルム６には引っ張り力が作用するため、接着フィルム６は図１２に示すように半導体チップ２０に装着されていない部分が分割溝２３に沿って破断される。このとき、保護粘着テープ８と半導体チップ２０に装着されている接着フィルム６との間にズレが生じ密着性が低下するので、接着フィルム６を装着した半導体チップ２０が保護粘着テープ８から容易に離脱できる状態となる。
【００１９】
接着フィルム破断工程において、個々の半導体チップ２０に分離された半導体ウエーハ２の裏面に装着された接着フィルム６が分割溝２３に沿って破断されたならば、図１０に示すように保護粘着テープ拡張装置９の上方に配置されたチップピックアップコレット１０を作動して、個々の半導体チップ２０を保護粘着テープ８の上面から離脱し、図示しないトレーに搬送する。このとき、拡張部材９２１内に配設された紫外線照射ランプ９３を点灯して保護粘着テープ８に紫外線を照射し、保護粘着テープ８の粘着力を低下せしめることにより、より容易に離脱することができる。このようにして、保護粘着テープ８から離脱された半導体チップ２０は、図１３に示すように裏面に接着フィルム６が装着された状態であり、裏面に接着フィルム６が装着された半導体チップ２０が得られる。
【００２０】
なお、接着フィルム装着工程において個々の半導体チップ２０に分離された半導体ウエーハ２の裏面２ｂに接着フィルム６を装着状態で、保護部材４を剥離し接着フィルム６に引張力を付与することにより、接着フィルム６は半導体チップ２０に装着されていない部分を分割溝２３に沿って破断することができる。従って、裏面に接着フィルム６が装着された半導体チップ２０を得ることができる。
【００２１】
【発明の効果】
本発明による半導体ウエーハの分割方法によれば、先ダイシングによって個々の半導体チップに分離されてはいるが半導体ウエーハの形態が維持されている状態でその裏面にダイボンディング用の接着フィルムを装着するので、半導体チップの裏面に接着フィルムを容易に装着することができる。そして、接着フィルムに引張力を付与し、分割溝に沿って破断することにより、裏面に接着フィルムが装着された半導体チップを得ることができる。従って、半導体チップのボンディング作業を円滑に行うことができる。
【図面の簡単な説明】
【図１】本発明に従って分割される半導体ウエーハの斜視図。
【図２】本発明による分割方法における分割溝形成工程の説明図。
【図３】分割溝形成工程が実施された半導体ウエーハの一部を拡大して示す断面図。
【図４】本発明による分割方法における保護部材貼着工程の説明図。
【図５】本発明による分割方法における分割溝表出工程の説明図。
【図６】分割溝表出工程が実施された半導体ウエーハの一部を拡大して示す断面図。
【図７】分割溝表出工程が実施された半導体ウエーハの斜視図。
【図８】本発明による分割方法における接着フィルム装着工程の説明図。
【図９】本発明による分割方法における保護粘着テープ貼着工程の説明図。
【図１０】本発明による接着フィルム破断工程を実施するための保護粘着テープ拡張装置の斜視図。
【図１１】本発明による分割方法における接着フィルム破断工程の説明図。
【図１２】接着フィルム破断工程が実施された半導体ウエーハの一部を拡大して示す断面図。
【図１３】本発明による分割方法によって導体ウエーハが分割して形成された半導体チップの斜視図。
【符号の説明】
２：半導体ウエーハ
２０：半導体チップ
２１：ストリート
２２：回路
２３：分割溝
３：切削装置
３１：チャックテーブル
３２：切削手段
３２１：切削ブレード
４：保護部材
５：研削装置
５１：チャックテーブル
５２：研削手段
５２１：研削砥石
６：ダイボンディング用の接着フィルム
７：環状の支持フレーム
８：伸長可能な保護粘着テープ
９：保護粘着テープ拡張装置
９１：円筒状のベース
９２：拡張手段
９２１：円筒状の拡張部材
９３：紫外線照射ランプ
１０：チップピックアップコレット[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for dividing a semiconductor wafer into a plurality of individual semiconductor chips, the method comprising dividing a semiconductor wafer having a plurality of streets formed in a grid pattern on a surface thereof and a circuit formed in a plurality of regions partitioned by the plurality of streets. About.
[0002]
[Prior art]
For example, in a semiconductor device manufacturing process, circuits such as ICs and LSIs are formed in a large number of regions partitioned by streets (cut lines) formed in a grid on the surface of a semiconductor wafer having a substantially disk shape. Each semiconductor chip is manufactured by dividing each area where a circuit is formed along a street. A dicing device is generally used as a dividing device for dividing a semiconductor wafer, and the dicing device cuts the semiconductor wafer with a cutting blade having a thickness of about 20 μm. The semiconductor chips thus divided are packaged and widely used for electric devices such as mobile phones and personal computers.
[0003]
On the divided semiconductor chip, an adhesive film for die bonding called a die attach film having a thickness of 20 to 40 μm formed of a polyimide resin or the like is mounted on the back surface, and the semiconductor chip is supported via the die attach film. Bonded by heating to the frame. As a method of attaching a die attach film which is an adhesive film for die bonding to the back surface of the semiconductor chip, attach the die attach film to the back surface of the semiconductor wafer, and then cut along the street formed on the front surface of the semiconductor wafer By cutting with a die attach film by a blade, a semiconductor chip having a die attach film mounted on the back surface is formed. When bonding the semiconductor chip to the frame supporting the semiconductor chip, the bonding operation is performed smoothly because the die attach film is already mounted on the back surface of the semiconductor chip.
[0004]
In recent years, electric devices such as mobile phones and personal computers have been required to be lighter and smaller, and thinner semiconductor chips have been required. As a technique for dividing a thinner semiconductor chip, a dividing technique called so-called dicing has been put to practical use. In this pre-dicing, a dividing groove having a predetermined depth (corresponding to the finished thickness of the semiconductor chip) is formed along the street from the front surface of the semiconductor wafer, and then the back surface of the semiconductor wafer having the dividing groove formed on the front surface is formed. This is a technique in which the dividing grooves are exposed to separate the individual semiconductor chips, and the semiconductor chips can be processed to a thickness of 50 μm or less. (For example, refer to Patent Document 1.)
[0005]
[Patent Document 1]
Japanese Patent Application Laid-Open No. Sho 62-4341
[Problems to be solved by the invention]
Therefore, when the semiconductor wafer is divided into individual semiconductor chips by pre-dicing, the die attach film, which is an adhesive film for die bonding, cannot be mounted on the back surface of the semiconductor wafer in advance, and the semiconductor chip cannot be separated. When bonding to a frame supporting a chip, the bonding must be performed while a bonding agent is inserted between the semiconductor chip and the frame, and there is a problem that the bonding operation cannot be performed smoothly.
[0007]
The present invention has been made in view of the above facts, and a main technical problem thereof is that a semiconductor wafer can be easily attached with an adhesive film for die bonding to individual semiconductor chips divided by pre-dicing. The object of the present invention is to provide a dividing method.
[0008]
[Means for Solving the Problems]
According to the present invention, in order to solve the main technical problem, according to the present invention, a plurality of streets are formed in a lattice shape on a surface, and a semiconductor wafer in which a circuit is formed in a plurality of regions divided by the plurality of streets is individually formed. A method of dividing into semiconductor chips,
A dividing groove forming step of forming a dividing groove having a predetermined depth along the street from the surface of the semiconductor wafer;
A protective member attaching step of attaching a protective member to the surface of the semiconductor wafer on which the division grooves are formed,
A dividing groove exposing step of grinding the back surface of the semiconductor wafer having the protective member adhered to the surface and exposing the dividing groove on the surface to separate the individual semiconductor chips;
An adhesive film mounting step of mounting an adhesive film for die bonding on the back surface of the semiconductor wafer separated into the semiconductor chips,
An adhesive film breaking step of applying a tensile force to the adhesive film mounted on the back surface of the semiconductor wafer separated from the semiconductor chip and breaking the adhesive film along the dividing groove.
A method for dividing a semiconductor wafer is provided.
[0009]
Further, according to the present invention, a method of dividing a semiconductor wafer having a plurality of streets formed in a grid pattern on a surface and having a circuit formed in a plurality of regions partitioned by the plurality of streets into individual semiconductor chips And
A dividing groove forming step of forming a dividing groove having a predetermined depth along the street from the surface of the semiconductor wafer;
A protective member attaching step of attaching a protective member to the surface of the semiconductor wafer on which the division grooves are formed,
A dividing groove exposing step of grinding the back surface of the semiconductor wafer having the protective member adhered to the surface and exposing the dividing groove on the surface to separate the individual semiconductor chips;
An adhesive film mounting step of mounting an adhesive film for die bonding on the back surface of the semiconductor wafer separated into the semiconductor chips,
A protective adhesive tape attaching step of attaching an extensible protective adhesive tape to the adhesive film side of the semiconductor wafer having the adhesive film attached to the back surface and peeling off a protective member attached to the surface of the semiconductor wafer When,
An adhesive film breaking step of expanding the protective pressure-sensitive adhesive tape to apply a tensile force to the adhesive film, and breaking the adhesive film along the dividing groove;
A semiconductor chip detaching step of detaching the semiconductor chip to which the broken adhesive film is stuck from the protective adhesive tape,
A method for dividing a semiconductor wafer is provided.
[0010]
In the adhesive film mounting step, the adhesive film is placed on the back surface of the semiconductor wafer separated into semiconductor chips, and the adhesive film is pressed against the back surface of the semiconductor wafer while being heated at a temperature of 80 to 200 ° C. I do. The protective adhesive tape is mounted so as to cover an inner opening of the annular support frame. Further, the protective adhesive tape has a property that the adhesive strength is reduced by an external stimulus, and when the semiconductor chip to which the adhesive film is adhered is detached from the protective adhesive tape in the semiconductor chip detaching step, the external force is reduced. It is desirable to reduce the adhesive force of the protective adhesive tape by applying a stimulus.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of a method for dividing a semiconductor wafer according to the present invention will be described in detail with reference to the accompanying drawings.
[0012]
FIG. 1 shows a perspective view of a semiconductor wafer to be divided according to the present invention. In the semiconductor wafer 2 shown in FIG. 1, a plurality of streets 21 are formed in a lattice shape on a surface 2a, and a circuit 22 is formed in a plurality of regions partitioned by the plurality of streets 21. A method of dividing the semiconductor wafer 2 into individual semiconductor chips will be described with reference to FIGS.
In order to divide the semiconductor wafer 2 into individual semiconductor chips, first, a dividing groove having a predetermined depth (depth corresponding to the finished thickness of each semiconductor chip) along the street 21 formed on the surface 2a of the semiconductor wafer 2 Is formed (divided groove forming step). In this division groove forming step, a cutting device 3 generally used as a dicing device can be used as shown in FIG. That is, the cutting device 3 includes a chuck table 31 having a suction holding unit, and a cutting unit 32 having a cutting blade 321. The semiconductor wafer 2 is held on the chuck table 31 of the cutting device 3 with the front surface 2a facing up, and while the cutting blade 321 of the cutting means 32 is rotated, the chuck table 31 is cut and fed in the direction indicated by arrow X, and By dividing and feeding the cutting means 32 at intervals of the street in the direction indicated by Y, the dividing grooves 23 are formed along the street 21. The dividing groove 23 is set to a depth corresponding to the finished thickness of each semiconductor chip to be divided as shown in FIG.
[0013]
After the dividing grooves 23 having a predetermined depth are formed along the streets 22 on the surface 2a of the semiconductor wafer 2 by the above-described dividing groove forming step, the semiconductor wafer 2 is formed as shown in FIGS. A protective member 4 for grinding is adhered to the front surface side (the side on which the circuit 22 is formed) (protective member attaching step).
[0014]
Next, as described above, the back surface 2b of the semiconductor wafer 2 having the protective member 5 adhered to the front surface is ground so that the dividing grooves 23 are exposed on the back surface 2b and divided into individual semiconductor chips (divided groove exposing step). . This division groove exposing step is performed by a grinding apparatus 5 having a grinding means 52 having a chuck table 51 and a grinding wheel 521 as shown in FIG. That is, the back surface 2b of the semiconductor wafer 2 is held on the chuck table 51 with the back surface 2b facing upward. For example, while the chuck table 51 is rotated at 300 rpm, the grinding wheel 52 of the grinding means 52 is rotated at 6000 rpm, and the back surface of the semiconductor wafer 2 is Grinding is performed by contacting the groove 2b, and grinding is performed until the dividing groove 23 is exposed on the back surface 2b as shown in FIG. By grinding until the division grooves 23 are exposed in this manner, the semiconductor wafer 2 is separated into individual semiconductor chips 20 as shown in FIG. Since the protective members 4 are adhered to the surfaces of the separated semiconductor chips 20, the semiconductor wafer 2 is maintained in the form of the semiconductor wafer 2 without being separated.
[0015]
When the semiconductor wafer 2 is separated into individual semiconductor chips 20 by the above-described dividing groove exposing step, as shown in FIGS. 8A and 8B, a die called a die attach film is formed on the back surface 2b of the semiconductor wafer 2. An adhesive film 6 for bonding is mounted (adhesive film mounting step). In this adhesive film mounting step, the contact film 6 having a thickness of 20 to 40 μm made of a polyimide resin is placed on the back surface 2 b of the semiconductor wafer 2 separated into the individual semiconductor chips 20, and the temperature of 80 to 200 ° C. The adhesive film 6 is pressed against the back surface 2b of the semiconductor wafer 2 while being heated at a temperature and mounted. The die bonding adhesive film 6 called a die attach film is easily broken by applying a relatively small tensile force. Since the adhesive film 6 is attached to the back surface 2b of the semiconductor wafer 20 while being separated into individual semiconductor chips 20 but maintaining the form of the semiconductor wafer 2, the adhesive film 6 is easily attached to the back surface of the semiconductor chip 20. Can be attached to
[0016]
If the adhesive film 6 is mounted on the back surface 2b of the semiconductor wafer 2 separated into the individual semiconductor chips 20 in the above-described adhesive film mounting process, the adhesive film 6 can be extended toward the adhesive film 6 mounted on the back surface 2b of the semiconductor wafer 2. The protective member 4 attached to the front surface 2a of the semiconductor wafer 2 is peeled off while attaching a protective adhesive tape (protective adhesive tape attaching step). As shown in FIG. 9, this protective adhesive tape sticking step is performed by stretching a synthetic resin tape such as a vinyl chloride tape generally used as a dicing tape, which is mounted so as to cover the inner opening of the annular support frame 7. The adhesive film 6 attached to the back surface 2b of the semiconductor wafer 2 is adhered to the upper surface of a possible protective adhesive tape 8. Then, the protection member 4 attached to the surface 2a of the semiconductor wafer 2 is peeled off. In addition, as the extensible protective adhesive tape 8, a UV tape having a property that adhesive strength is reduced by an external stimulus such as ultraviolet light is used.
[0017]
If the adhesive film 6 attached to the back surface 2b of the semiconductor wafer 2 is attached to the upper surface of the extensible protective adhesive tape 8 attached to the support frame 7 in the protective adhesive tape attaching step, the protective adhesive tape 8 is expanded. Then, a tensile force is applied to the adhesive film 6 to break the adhesive film 6 along the dividing groove (adhesive film breaking step). This adhesive film breaking step is performed by the protective adhesive tape expanding device 9 shown in FIGS. 10 and 11. Here, the protective adhesive tape expanding device 9 will be described. The illustrated protective adhesive tape expanding device 9 includes a cylindrical base 91 on which a mounting surface 911 on which the support frame 7 is mounted is formed, and is mounted concentrically within the base 91 and mounted on the support frame 7. Expansion means 92 for positively spreading the protective adhesive tape 8. The expansion means 92 includes a cylindrical expansion member 921 that supports a region 81 of the protective adhesive tape 8 where the plurality of semiconductor chips 20 are present. The extension member 921 is vertically moved (in the vertical direction of the cylindrical base 91) between a reference position shown in FIG. 11A and an extension position shown in FIG. (Axial direction). In the illustrated embodiment, an ultraviolet irradiation lamp 93 is provided inside the expansion member 921.
[0018]
Next, an adhesive film breaking step performed using the above-described protective adhesive tape expanding device 9 will be described with reference to FIGS. 10 and 12.
As described above, the semiconductor wafer 2 (the semiconductor wafer separated into individual semiconductor chips 20) having the adhesive film 6 mounted on the back surface 2b supported on the upper surface of the extensible protective adhesive tape 8 mounted on the support frame 7 as described above. 2 and the adhesive film 6 attached to the back surface 2b is attached to the upper surface of the protective adhesive tape 8), and the support frame 7 is mounted on the cylindrical base 91 as shown in FIGS. It is placed on the placement surface 911 and is fixed to the base 91 by the clamp 94. Next, as shown in FIG. 11 (b), the extension member 921 of the extension means 92 supporting the region 81 where the plurality of semiconductor chips 20 are present in the protective adhesive tape 8 is moved by an elevating means not shown in FIG. From the reference position to the extended position shown in FIG. 11B. As a result, the extensible protective adhesive tape 8 is expanded, and a tensile force acts on the adhesive film 6 attached to the protective adhesive tape 8, so that the adhesive film 6 is made of a semiconductor as shown in FIG. The portion not mounted on the chip 20 is broken along the dividing groove 23. At this time, a gap is generated between the protective adhesive tape 8 and the adhesive film 6 mounted on the semiconductor chip 20 and the adhesiveness is reduced, so that the semiconductor chip 20 having the adhesive film 6 mounted thereon can be easily separated from the protective adhesive tape 8. You will be able to leave.
[0019]
In the adhesive film breaking step, if the adhesive film 6 mounted on the back surface of the semiconductor wafer 2 separated into the individual semiconductor chips 20 is broken along the dividing groove 23, the protective adhesive tape is expanded as shown in FIG. By operating the chip pickup collet 10 disposed above the apparatus 9, the individual semiconductor chips 20 are detached from the upper surface of the protective adhesive tape 8 and transported to a tray (not shown). At this time, by turning on the ultraviolet irradiation lamp 93 disposed in the expansion member 921 and irradiating the protective adhesive tape 8 with ultraviolet light to reduce the adhesive force of the protective adhesive tape 8, the protective adhesive tape 8 can be more easily detached. it can. The semiconductor chip 20 detached from the protective adhesive tape 8 in this manner is in a state where the adhesive film 6 is mounted on the back surface as shown in FIG. 13, and the semiconductor chip 20 with the adhesive film 6 mounted on the back surface is can get.
[0020]
In the adhesive film attaching step, the protective member 4 is peeled off while the adhesive film 6 is attached to the back surface 2 b of the semiconductor wafer 2 separated into the individual semiconductor chips 20 and the tensile force is applied to the adhesive film 6, thereby bonding the semiconductor wafer 2. The portion of the film 6 that is not mounted on the semiconductor chip 20 can be broken along the dividing groove 23. Accordingly, it is possible to obtain the semiconductor chip 20 having the adhesive film 6 mounted on the back surface.
[0021]
【The invention's effect】
According to the method for dividing a semiconductor wafer according to the present invention, the adhesive film for die bonding is mounted on the back surface of the semiconductor wafer while being separated into individual semiconductor chips by pre-dicing, while maintaining the form of the semiconductor wafer. In addition, the adhesive film can be easily attached to the back surface of the semiconductor chip. Then, a tensile force is applied to the adhesive film, and the adhesive film is broken along the dividing groove, whereby a semiconductor chip having the adhesive film attached to the back surface can be obtained. Therefore, the semiconductor chip bonding operation can be performed smoothly.
[Brief description of the drawings]
FIG. 1 is a perspective view of a semiconductor wafer divided according to the present invention.
FIG. 2 is an explanatory view of a dividing groove forming step in the dividing method according to the present invention.
FIG. 3 is an enlarged cross-sectional view showing a part of the semiconductor wafer on which a division groove forming step has been performed.
FIG. 4 is an explanatory view of a protective member attaching step in the dividing method according to the present invention.
FIG. 5 is an explanatory view of a dividing groove exposing step in the dividing method according to the present invention.
FIG. 6 is an enlarged cross-sectional view showing a part of the semiconductor wafer on which the dividing groove exposing step has been performed.
FIG. 7 is a perspective view of a semiconductor wafer on which a dividing groove exposing step has been performed.
FIG. 8 is an explanatory view of an adhesive film mounting step in the dividing method according to the present invention.
FIG. 9 is an explanatory diagram of a protective adhesive tape attaching step in the dividing method according to the present invention.
FIG. 10 is a perspective view of a protective adhesive tape expanding device for performing an adhesive film breaking step according to the present invention.
FIG. 11 is an explanatory view of an adhesive film breaking step in the dividing method according to the present invention.
FIG. 12 is an enlarged cross-sectional view showing a part of the semiconductor wafer on which the adhesive film breaking step has been performed.
FIG. 13 is a perspective view of a semiconductor chip formed by dividing a conductive wafer by the dividing method according to the present invention.
[Explanation of symbols]
2: semiconductor wafer 20: semiconductor chip 21: street 22: circuit 23: dividing groove 3: cutting device 31: chuck table 32: cutting means 321: cutting blade 4: protection member 5: grinding device 51: chuck table 52: grinding means 521: Grinding wheel 6: Adhesive film for die bonding 7: Annular support frame 8: Extendable protective adhesive tape 9: Protective adhesive tape expanding device 91: Cylindrical base 92: Expanding means 921: Cylindrical expanding member 93: UV irradiation lamp 10: Chip pickup collet

Claims (5)

表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に回路が形成された半導体ウエーハを個々の半導体チップに分割する方法であって、
半導体ウエーハの表面から該ストリートに沿って所定の深さの分割溝を形成する分割溝形成工程と、
該分割溝が形成された半導体ウエーハの表面に保護部材を貼着する保護部材貼着工程と、
表面に該保護部材が貼着された半導体ウエーハの裏面を研削して該裏面に該分割溝を表出させ個々の半導体チップに分離する分割溝表出工程と、
該半導体チップに分離された半導体ウエーハの裏面にダイポンディング用の接着フィルムを装着する接着フィルム装着工程と、
該半導体チップに分離された半導体ウエーハの裏面に装着された接着フィルムに引張力を付与し、該接着フィルムを分割溝に沿って破断する接着フィルム破断工程と、を含む、
ことを特徴とする半導体ウエーハの分割方法。A method of dividing a semiconductor wafer in which a plurality of streets are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of streets into individual semiconductor chips,
A dividing groove forming step of forming a dividing groove having a predetermined depth along the street from the surface of the semiconductor wafer;
A protective member attaching step of attaching a protective member to the surface of the semiconductor wafer on which the division grooves are formed,
A dividing groove exposing step of grinding the back surface of the semiconductor wafer having the protective member adhered to the front surface and exposing the dividing grooves on the back surface to separate the individual semiconductor chips;
An adhesive film mounting step of mounting an adhesive film for die bonding on the back surface of the semiconductor wafer separated into the semiconductor chips,
An adhesive film breaking step of applying a tensile force to the adhesive film mounted on the back surface of the semiconductor wafer separated from the semiconductor chip and breaking the adhesive film along the dividing groove.
A method for dividing a semiconductor wafer. 表面に複数のストリートが格子状に形成されているとともに該複数のストリートによって区画された複数の領域に回路が形成された半導体ウエーハを個々の半導体チップに分割する方法であって、
半導体ウエーハの表面から該ストリートに沿って所定の深さの分割溝を形成する分割溝形成工程と、
該分割溝が形成された半導体ウエーハの表面に保護部材を貼着する保護部材貼着工程と、
表面に該保護部材が貼着された半導体ウエーハの裏面を研削して該裏面に該分割溝を表出させ個々の半導体チップに分離する分割溝表出工程と、
該半導体チップに分離された半導体ウエーハの裏面にダイポンディング用の接着フィルムを装着する接着フィルム装着工程と、
裏面に該接着フィルムが装着された半導体ウエーハの該接着フィルム側に伸長可能な保護粘着テープを貼着するとともに、半導体ウエーハの表面に貼着されている保護部材を剥離する保護粘着テープ貼着工程と、
該保護粘着テープを拡張して該接着フィルムに引張力を付与し、該接着フィルムを該分割溝に沿って破断する接着フィルム破断工程と、
破断された該接着フィルムが貼着されている該半導体チップを該保護粘着テープから離脱する半導体チップ離脱工程と、を含む、
ことを特徴とする半導体ウエーハの分割方法。A method of dividing a semiconductor wafer in which a plurality of streets are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of streets into individual semiconductor chips,
A dividing groove forming step of forming a dividing groove having a predetermined depth along the street from the surface of the semiconductor wafer;
A protective member attaching step of attaching a protective member to the surface of the semiconductor wafer on which the division grooves are formed,
A dividing groove exposing step of grinding the back surface of the semiconductor wafer having the protective member adhered to the front surface and exposing the dividing grooves on the back surface to separate the individual semiconductor chips;
An adhesive film mounting step of mounting an adhesive film for die bonding on the back surface of the semiconductor wafer separated into the semiconductor chips,
A protective adhesive tape attaching step of attaching an extensible protective adhesive tape to the adhesive film side of the semiconductor wafer having the adhesive film attached to the back surface and peeling off a protective member attached to the surface of the semiconductor wafer When,
An adhesive film breaking step of expanding the protective pressure-sensitive adhesive tape to apply a tensile force to the adhesive film, and breaking the adhesive film along the dividing groove;
A semiconductor chip detaching step of detaching the semiconductor chip to which the broken adhesive film is stuck from the protective adhesive tape,
A method for dividing a semiconductor wafer. 該接着フィルム装着工程は、該半導体チップに分離された半導体ウエーハの裏面に該接着フィルムを載置し、８０〜２００°Ｃの温度で加熱しつつ該接着フィルムを半導体ウエーハの裏面に押圧して装着する、請求項１又は２記載の半導体ウエーハの分割方法。In the adhesive film mounting step, the adhesive film is placed on the back surface of the semiconductor wafer separated from the semiconductor chip, and the adhesive film is pressed against the back surface of the semiconductor wafer while heating at a temperature of 80 to 200 ° C. 3. The method for dividing a semiconductor wafer according to claim 1, wherein the semiconductor wafer is mounted. 該保護粘着テープは、環状の支持フレームの内側開口部を覆うように装着されている、請求項２又は３記載の半導体ウエーハの分割方法。4. The method for dividing a semiconductor wafer according to claim 2, wherein the protective adhesive tape is mounted so as to cover an inner opening of the annular support frame. 該保護粘着テープは外的刺激によって粘着力が低下する性質を有しており、該半導体チップ離脱工程において該接着フィルムが貼着されている該半導体チップを該保護粘着テープから離脱する際には外的刺激を付与して該保護粘着テープの粘着力を低下せしめる、請求項２から４のいずれかに記載の半導体ウエーハの分割方法。The protective adhesive tape has a property that the adhesive force is reduced by an external stimulus, and when the semiconductor chip to which the adhesive film is attached is detached from the protective adhesive tape in the semiconductor chip detaching step, The method for dividing a semiconductor wafer according to any one of claims 2 to 4, wherein an external stimulus is applied to reduce the adhesive force of the protective adhesive tape.
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