JP2004287396A - Optical waveguide film - Google Patents
Optical waveguide film Download PDFInfo
- Publication number
- JP2004287396A JP2004287396A JP2003382694A JP2003382694A JP2004287396A JP 2004287396 A JP2004287396 A JP 2004287396A JP 2003382694 A JP2003382694 A JP 2003382694A JP 2003382694 A JP2003382694 A JP 2003382694A JP 2004287396 A JP2004287396 A JP 2004287396A
- Authority
- JP
- Japan
- Prior art keywords
- optical waveguide
- core
- clad
- polyimide resin
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000009719 polyimide resin Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000005253 cladding Methods 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 27
- 229910052731 fluorine Inorganic materials 0.000 claims description 27
- 239000011737 fluorine Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 18
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 17
- 239000012792 core layer Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- WFDKSHJHQJBMGK-UHFFFAOYSA-N 6-aminoisoindolo[4,5-h]quinazolin-8-one Chemical compound C1(NC(N=C2C=3C(=CC=C12)C1=CN=CC1=CC=3)=O)=N WFDKSHJHQJBMGK-UHFFFAOYSA-N 0.000 claims description 3
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- 239000004697 Polyetherimide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
Description
本発明は、ポリイミド系樹脂及びフォトブリーチング材料を用いた光導波路フィルム及びその製造方法に関する。 The present invention relates to an optical waveguide film using a polyimide resin and a photobleaching material, and a method for manufacturing the same.
近年のパソコンやインターネットの普及に伴い、情報伝送需要が急激に増大している。このため、伝送速度の速い光伝送を、パソコン等の末端の情報処理装置まで普及させることが望まれている。これを実現するには、光インターコネクション用に、高性能な光導波路等を使用して送信機能と受信機能とを一体化した、小型の光送受信モジュールを、安価かつ大量に製造する必要がある。 2. Description of the Related Art With the spread of personal computers and the Internet in recent years, demand for information transmission has been rapidly increasing. For this reason, it is desired that optical transmission with a high transmission speed be spread to terminal information processing devices such as personal computers. In order to realize this, it is necessary to manufacture inexpensively and in large quantities a small optical transceiver module that integrates the transmission function and the reception function using a high-performance optical waveguide for optical interconnection. .
光導波路の材料としては、ガラスや半導体材料等の無機材料や、樹脂が知られている。光導波路(コア)ならびにクラッドを構成する樹脂としては、種々のものが知られているが、ガラス転移温度(Tg)が高く、耐熱性に優れるポリイミド系樹脂が特に期待されている。ポリイミド系樹脂によりコア及びクラッドを形成した場合、長期信頼性が期待でき、半田付けにも耐えることができる。 As materials for the optical waveguide, inorganic materials such as glass and semiconductor materials, and resins are known. Various resins are known as the resin constituting the optical waveguide (core) and the clad, but polyimide resins having a high glass transition temperature (Tg) and excellent heat resistance are particularly expected. When the core and the clad are formed of a polyimide resin, long-term reliability can be expected, and they can withstand soldering.
従来このようなコアとクラッドから構成される光導波路は、ガラス、シリコン等の無機材料、アクリル樹脂等の有機材料からなる厚い基板上に形成されているため、屈曲性がない。このため、フレキシブルな光配線や分岐などに利用することが困難であった。
そこで、ポリイミド系樹脂からなるコアとクラッドのみから構成された屈曲性を有するポリマー光導波路フィルムも作成されている(特許文献1参照)。このようなポリマー光導波路フィルムは、ガラス、シリコン等の基板上にクラッドを設け、クラッド上にコア層を設けてこれからコアを形成し、該コアを覆うようにクラッドを設けることによりポリマー光導波路フィルムを形成し、次いでこのフィルムを基板から剥離することにより製造されているが、コアを形成するために、ホトマスクの使用、現像、エッチング等の複雑な工程が必要である。また、ポリイミド系樹脂からなる光導波路フィルムではその伝搬損失を十分に小さくすることができないという問題があった。
Conventionally, such an optical waveguide composed of a core and a clad is formed on a thick substrate made of an inorganic material such as glass or silicon or an organic material such as an acrylic resin, and therefore has no flexibility. For this reason, it has been difficult to use the optical fiber for flexible optical wiring and branching.
In view of this, a flexible polymer optical waveguide film composed of only a core and a clad made of a polyimide-based resin has been produced (see Patent Document 1). Such a polymer optical waveguide film is formed by providing a clad on a substrate of glass, silicon, or the like, providing a core layer on the clad, forming a core from this, and providing the clad so as to cover the core. And then peeling the film from the substrate. However, in order to form a core, complicated steps such as use of a photomask, development, and etching are required. Further, the optical waveguide film made of a polyimide resin has a problem that the propagation loss cannot be sufficiently reduced.
本発明の目的は、フレキシビリティに優れた光導波路フィルムであって、製造工程が短く、製造が容易である光導波路フィルム及びその製造方法を提供することである。また、本発明の目的はさらに伝搬損失に優れた光導波路フィルム及びその製造方法を提供することである。 An object of the present invention is to provide an optical waveguide film having excellent flexibility, which has a short manufacturing process and is easy to manufacture, and a method for manufacturing the same. It is another object of the present invention to provide an optical waveguide film having further excellent propagation loss and a method for manufacturing the same.
上記課題は、下部クラッド、前記下部クラッド上に形成されたコア、前記下部クラッド上部及び前記コア側部に形成された側部クラッド並びに前記コア及び前記側部クラッド上に形成された上部クラッドから構成される光導波路フィルムであって、前記コアがフォトブリーチング材料からなり、前記側部クラッドが前記フォトブリーチング材料をUV露光することにより屈折率が低下した材料からなり、前記下部及び上部クラッドの少なくとも一部がポリイミド系樹脂からなる光導波路フィルムにより解決されることが見出された。
上記課題はまた、酸化シリコンの被膜を形成したシリコン基板上に、下部クラッドを設ける工程、前記下部クラッドの上にフォトブリーチング材料からなるコア層を設ける工程、前記コア層においてコアとなるべき部分以外の部分をUV露光してコアと側部クラッドを形成する工程、及び前記コア及び前記側部クラッド上に上部クラッドを設ける工程、ただし、前記下部及び上部クラッドの少なくとも一部はポリイミド系樹脂からなる、をこの順に実施してシリコン基板上に光導波路構造を形成し、これを水に浸漬してシリコン基板から剥離することにより光導波路フィルムを製造する方法により解決される。
The above object is constituted by a lower clad, a core formed on the lower clad, a side clad formed on the lower clad upper part and the core side part, and an upper clad formed on the core and the side clad. An optical waveguide film, wherein the core is made of a photobleaching material, and the side cladding is made of a material whose refractive index is reduced by UV exposure of the photobleaching material. It has been found that the problem is solved by an optical waveguide film at least partially made of a polyimide resin.
The object is also to provide a step of providing a lower clad on a silicon substrate on which a silicon oxide film is formed, a step of providing a core layer made of a photobleaching material on the lower clad, and a portion to be a core in the core layer. A step of forming a core and a side clad by exposing a part other than UV, and a step of providing an upper clad on the core and the side clad, provided that at least a part of the lower and upper clad is made of a polyimide resin. Is performed in this order to form an optical waveguide structure on a silicon substrate, and the optical waveguide structure is immersed in water and peeled off from the silicon substrate to solve the problem.
本発明によりフレキシビリティに優れた光導波路フィルムを得ることができ、かつ製造工程が短く、製造が容易である光導波路フィルムを得ることができる。すなわち、本発明の光導波路フィルムのコア材料はUV露光により屈折率が低下するフォトブリーチング材料を用いているため、コア層を形成した後、コア層においてコアとなるべき部分以外の部分をUV露光して側部クラッドを形成することができる。したがってコア層のエッチング等によりコアを形成する必要がなく、製造工程を短くすることができ、製造が容易であり、かつ製造コストが安いという利点を有する。また、本発明の光導波路フィルムは上部クラッド及び下部クラッドの少なくとも一部にポリイミド系樹脂を用いているため、フィルムとして十分なフレキシビリティを有する。 According to the present invention, an optical waveguide film having excellent flexibility can be obtained, and an optical waveguide film having a short manufacturing process and easy manufacturing can be obtained. That is, since the core material of the optical waveguide film of the present invention uses a photobleaching material whose refractive index is reduced by UV exposure, after the core layer is formed, portions of the core layer other than the portion to be the core are exposed to UV. Exposure can form side cladding. Therefore, there is no need to form a core by etching the core layer or the like, so that the manufacturing process can be shortened, the manufacturing is easy, and the manufacturing cost is low. In addition, the optical waveguide film of the present invention has sufficient flexibility as a film because a polyimide resin is used for at least a part of the upper clad and the lower clad.
さらに、本発明の光導波路フィルムは、ポリイミド樹脂のみからなる光導波路フィルムよりも伝搬損失において非常に優れた効果を示す。これはコア層のエッチング等の製造工程が無いためコアの側面の平滑性が保たれることが一つの原因として考えられる。またフォトブリーチング材料としてポリシランを用いた場合には特に優れた伝搬損失を示すため好ましい。 Further, the optical waveguide film of the present invention shows a very excellent effect on the propagation loss as compared with the optical waveguide film composed of only the polyimide resin. One possible reason for this is that the flatness of the side surface of the core is maintained because there is no manufacturing process such as etching of the core layer. Also, when polysilane is used as the photobleaching material, it is preferable because it shows particularly excellent propagation loss.
本発明の光導波路フィルムの一つの実施態様の断面図を図1に示す。図1に従って説明すると、本発明の一つの光導波路フィルムは、下部クラッド2、下部クラッド2上に形成されたコア3、下部クラッド2上部及びコア3側部に形成された側部クラッド4及びコア3及び側部クラッド4上に形成された上部クラッド5から構成される光導波路フィルムであって、前記コア3がフォトブリーチング材料からなり、前記側部クラッド4が前記フォトブリーチング材料をUV露光することにより屈折率が低下した材料からなり、前記下部クラッド2及び上部クラッド5がポリイミド系樹脂からなる光導波路フィルムである。
FIG. 1 shows a cross-sectional view of one embodiment of the optical waveguide film of the present invention. Referring to FIG. 1, one optical waveguide film of the present invention comprises a
本発明の光導波路フィルムの他の実施態様としては、下部クラッド2、下部クラッド2上に形成されたコア3、下部クラッド2上部及びコア3側部に形成された側部クラッド4及びコア3及び側部クラッド4上に形成された上部クラッド5から構成される光導波路フィルムであって、前記コア3がフォトブリーチング材料からなり、前記側部クラッド4が前記フォトブリーチング材料をUV露光することにより屈折率が低下した材料からなり、前記下部クラッド2及び上部クラッド5の少なくとも一部がポリイミド系樹脂からなる光導波路フィルムである。
「下部クラッド2及び上部クラッド5の少なくとも一部がポリイミド系樹脂からなる」とは、下部クラッド2及び上部クラッド5のいずれか一方がポリイミド系樹脂からなっていてもよく、また下部クラッド2および/または上部クラッド5の一部がポリイミド系樹脂からなっていてもよい。下部クラッド2および/または上部クラッド5の一部がポリイミド系樹脂からなっている場合とは、例えば、下部クラッド2および/または上部クラッド5が二層からなりそのうち一層がポリイミド系樹脂からなる場合が挙げられる。
As another embodiment of the optical waveguide film of the present invention, the
“At least a part of the
本発明の光導波路フィルムの他の好ましい実施態様としては、下部クラッドがポリイミド系樹脂からなり、上部クラッドがポリシラン類からなる光導波路フィルムである。 Another preferred embodiment of the optical waveguide film of the present invention is an optical waveguide film in which the lower clad is made of a polyimide resin and the upper clad is made of polysilanes.
ポリイミド系樹脂以外の上部及び下部クラッド材料としては、後述するフォトブリーチング材料、アクリル樹脂、エポキシ樹脂等が挙げられる。 Examples of the upper and lower cladding materials other than the polyimide resin include a photobleaching material, an acrylic resin, an epoxy resin, and the like, which will be described later.
本発明において「光導波路フィルム」とは、コア−クラッド構造からなる平板型光導波路フィルムであって、基板又はこれに相当する部分を含まないものを意味する。 In the present invention, the “optical waveguide film” means a flat optical waveguide film having a core-clad structure, which does not include a substrate or a portion corresponding thereto.
本発明において、「フォトブリーチング材料」とは、UV光等の光照射により屈折率が変化する材料をいう。具体的には、ポリシラン、ニトロン化合物を添加したシリコーン化合物、(4−N,N−ジメチルアミノフェニル)−N−フェニルニトロンを含有するポリメチルメタクリレート、高分子色素(dye polymer)が挙げられる。 In the present invention, “photobleaching material” refers to a material whose refractive index changes by irradiation with light such as UV light. Specific examples include polysilane, a silicone compound to which a nitrone compound is added, polymethyl methacrylate containing (4-N, N-dimethylaminophenyl) -N-phenylnitrone, and a dye polymer.
このようなフォトブリーチング材料として伝搬損失の観点から特にポリシラン類が好ましい。ポリシラン類は、分岐型若しくは直鎖型のポリシラン類が挙げられる。分岐型ポリシランとはSi原子と隣接するSi原子との結合数が3または4であるSi原子を含むポリシランをいう。直鎖型ポリシランとはSi原子と隣接するSi原子との結合数が2であるポリシランをいう。 Polysilanes are particularly preferable as such a photobleaching material from the viewpoint of propagation loss. Examples of the polysilanes include branched or linear polysilanes. The branched polysilane refers to a polysilane containing Si atoms in which the number of bonds between Si atoms and adjacent Si atoms is 3 or 4. The linear polysilane refers to a polysilane in which the number of bonds between a Si atom and an adjacent Si atom is two.
通常Si原子の原子価は4であるので、ポリシラン中に存在する結合数が3以下のSi原子は、Si原子以外に、炭化水素基、アルコキシ基、アリールオキシ基または水素原子と結合する。この様な炭化水素基としては、炭素数1〜10のハロゲンで置換されていてもよい脂肪族炭化水素基、炭素数1〜14の芳香族炭化水素基が好ましい。脂肪族炭化水素基の具体例として、メチル基、プロピル基、ブチル基、オクチル基、デシル基、トリフルオロプロピル基、及びノナフルオロヘキシル基等の鎖型のもの、及びシクロヘキシル基、メチルヘキシル基の様な脂環型のもの等があげられる。また、芳香族炭化水素基の具体例として、フェニル基、p−トリル基、ビフェニル基及びアントラシル基等があげられる。 Since the valence of a Si atom is usually 4, the Si atom having a bond number of 3 or less present in the polysilane is bonded to a hydrocarbon group, an alkoxy group, an aryloxy group, or a hydrogen atom in addition to the Si atom. As such a hydrocarbon group, an aliphatic hydrocarbon group which may be substituted by a halogen having 1 to 10 carbon atoms and an aromatic hydrocarbon group having 1 to 14 carbon atoms are preferable. Specific examples of the aliphatic hydrocarbon group include a methyl group, a propyl group, a butyl group, an octyl group, a decyl group, a trifluoropropyl group, and a chain type such as a nonafluorohexyl group, and a cyclohexyl group and a methylhexyl group. And the like alicyclic type. Further, specific examples of the aromatic hydrocarbon group include a phenyl group, a p-tolyl group, a biphenyl group, and an anthracyl group.
アルコキシ基またはアリールオキシ基としては、炭素数が1〜8のものがあげられる。具体例としては、メトキシ基、フェノキシ基、オクチルオキシ基等があげられる。合成の容易さを考慮すると、これらの基のなかでメチル基及びフェニル基が特に好ましい。 Examples of the alkoxy group or the aryloxy group include those having 1 to 8 carbon atoms. Specific examples include a methoxy group, a phenoxy group, an octyloxy group and the like. Considering ease of synthesis, among these groups, a methyl group and a phenyl group are particularly preferred.
本発明の光導波路フィルムの上部及び下部クラッドの少なくとも一部を構成するポリイミド系樹脂としては、特にフッ素を含むポリイミド系樹脂が耐熱性の観点から好ましい。
フッ素を含むポリイミド系樹脂としては、フッ素を含むポリイミド樹脂、フッ素を含むポリ(イミド・イソインドロキナゾリンジオンイミド)樹脂、フッ素を含むポリエーテルイミド樹脂、フッ素を含むポリアミドイミド樹脂などが挙げられる。
As the polyimide resin constituting at least a part of the upper and lower clads of the optical waveguide film of the present invention, a polyimide resin containing fluorine is particularly preferable from the viewpoint of heat resistance.
Examples of the polyimide resin containing fluorine include a polyimide resin containing fluorine, a poly (imide / isoindoloquinazolinedionimide) resin containing fluorine, a polyetherimide resin containing fluorine, and a polyamideimide resin containing fluorine.
上記フッ素を含むポリイミド系樹脂の前駆体溶液は、N−メチル−2−ピロリドン、N,N−ジメチルアセトアミド、γ−ブチロラクトン、ジメチルスルホキシドなどの極性溶媒中で、テトラカルボン酸二無水物とジアミンを反応させることにより得られる。フッ素は、テトラカルボン酸二無水物とジアミンの両者に含まれていても良いし、いずれか一方にのみ含まれていてもよい。 The precursor solution of the above-mentioned fluorine-containing polyimide resin is prepared by dissolving tetracarboxylic dianhydride and diamine in a polar solvent such as N-methyl-2-pyrrolidone, N, N-dimethylacetamide, γ-butyrolactone, and dimethyl sulfoxide. It is obtained by reacting. Fluorine may be contained in both the tetracarboxylic dianhydride and the diamine, or may be contained in only one of them.
また、上記フッ素を含まないポリイミド系樹脂の前駆体溶液は、N−メチル−2−ピロリドン,N,N−ジメチルアセトアミド、γ−ブチロラクトン、ジメチルスルホキシドなどの極性溶媒中で、フッ素を含まないテトラカルボン酸二無水物とフッ素を含まないジアミンを反応させることにより得られる。 In addition, the precursor solution of the above-mentioned polyimide resin containing no fluorine is prepared from a tetracarboxylic acid containing no fluorine in a polar solvent such as N-methyl-2-pyrrolidone, N, N-dimethylacetamide, γ-butyrolactone, and dimethyl sulfoxide. It is obtained by reacting an acid dianhydride with a diamine containing no fluorine.
フッ素を含む酸二無水物の例としては、(トリフルオロメチル)ピロメリット酸二無水物、ジ(トリフルオロメチル)ピロメリット酸二無水物、ジ(ヘプタフルオロプロピル)ピロメリット酸二無水物、ペンタフルオロエチルピロメリット酸二無水物、ビス{3,5−ジ(トリフルオロメチル)フェノキシ}ピロメリット酸二無水物、2,2−ビス(3,4−ジカルボキシフェニル)ヘキサフルオロプロパン二無水物、5,5′−ビス(トリフルオロメチル)−3,3′,4,4′−テトラカルボキシビフェニル二無水物、2,2′,5,5′−テトラキス(トリフルオロメチル)−3,3′,4,4′−テトラカルボキシビフェニル二無水物、5,5′−ビス(トリフルオロメチル)−3,3′,4,4′−テトラカルボキシジフェニルエーテル二無水物、5,5′−ビス(トリフルオロメチル)−3,3′,4,4′−テトラカルボキシベンゾフェノン二無水物、ビス{(トリフルオロメチル)ジカルボキシフェノキシ}ベンゼン二無水物、ビス{(トリフルオロメチル)ジカルボキシフェノキシ}(トリフルオロメチル)ベンゼン二無水物、ビス(ジカルボキシフェノキシ)(トリフルオロメチル)ベンゼン二無水物、ビス(ジカルボキシフェノキシ)ビス(トリフルオロメチル)ベンゼン二無水物、ビス(ジカルボキシフェノキシ)テトラキス(トリフルオロメチル)ベンゼン二無水物、2,2−ビス{(4−(3,4−ジカルボキシフェノキシ)フェニル}ヘキサフルオロプロパン二無水物、ビス{(トリフルオロメチル)ジカルボキシフェノキシ}ビフェニル二無水物、ビス{(トリフルオロメチル)ジカルボキシフェノキシ}ビス(トリフルオロメチル)ビフェニル二無水物、ビス{(トリフルオロメチル)ジカルボキシフェノキシ}ジフェニルエーテル二無水物、ビス(ジカルボキシフェノキシ)ビス(トリフルオロメチル)ビフェニル二無水物などが挙げられる。 Examples of acid dianhydrides containing fluorine include (trifluoromethyl) pyromellitic dianhydride, di (trifluoromethyl) pyromellitic dianhydride, di (heptafluoropropyl) pyromellitic dianhydride, Pentafluoroethyl pyromellitic dianhydride, bis {3,5-di (trifluoromethyl) phenoxy} pyromellitic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride 5,5'-bis (trifluoromethyl) -3,3 ', 4,4'-tetracarboxybiphenyl dianhydride, 2,2', 5,5'-tetrakis (trifluoromethyl) -3, 3 ', 4,4'-tetracarboxybiphenyl dianhydride, 5,5'-bis (trifluoromethyl) -3,3', 4,4'-tetracarboxydiphenyl Terdianhydride, 5,5'-bis (trifluoromethyl) -3,3 ', 4,4'-tetracarboxybenzophenone dianhydride, bis {(trifluoromethyl) dicarboxyphenoxy} benzene dianhydride, Bis {(trifluoromethyl) dicarboxyphenoxy} (trifluoromethyl) benzene dianhydride, bis (dicarboxyphenoxy) (trifluoromethyl) benzene dianhydride, bis (dicarboxyphenoxy) bis (trifluoromethyl) benzene Dianhydride, bis (dicarboxyphenoxy) tetrakis (trifluoromethyl) benzene dianhydride, 2,2-bis {(4- (3,4-dicarboxyphenoxy) phenyl} hexafluoropropane dianhydride, bis} (Trifluoromethyl) dicarboxyphenoxy dibiphenyl dianhydride Bis {(trifluoromethyl) dicarboxyphenoxy} bis (trifluoromethyl) biphenyl dianhydride, bis {(trifluoromethyl) dicarboxyphenoxy} diphenyl ether dianhydride, bis (dicarboxyphenoxy) bis (trifluoromethyl) Biphenyl dianhydride and the like.
フッ素を含むジアミンとしては、例えば、4−(1H,1H,11H−エイコサフルオロウンデカノキシ)−1,3−ジアミノベンゼン、4−(1H,1H−パ−フルオロ−1−ブタノキシ)−1,3−ジアミノベンゼン、4−(1H,1H−パーフルオロ−1−ヘプタノキシ)−1,3−ジアミノベンゼン、4−(1H,1H−パーフルオロ−1−オクタノキシ)−1,3−ジアミノベンゼン、4−ペンタフルオロフェノキシ−1,3−ジアミノベンゼン、4−(2,3,5,6−テトラフルオロフェノキシ)−1,3−ジアミノベンゼン、4−(4−フルオロフェノキシ)−1,3−ジアミノベンゼン、4−(1H,1H,2H,2H−パーフルオロ−1−ヘキサノキシ)−1,3−ジアミノベンゼン、4−(1H,1H,2H,2H−パーフルオロ−1−ドデカノキシ)−1,3−ジアミノベンゼン、2,5−ジアミノベンゾトリフルオライド、ビス(トリフルオロメチル)フェニレンジアミン、ジアミノテトラ(トリフルオロメチル)ベンゼン、ジアミノ(ペンタフルオロエチル)ベンゼン、2,5−ジアミノ(パーフルオロヘキシル)ベンゼン、2,5−ジアミノ(パーフルオロブチル)ベンゼン、2,2′−ビス(トリフルオロメチル)−4,4′−ジアミノビフェニル、3,3′−ビス(トリフルオロメチル)−4,4′−ジアミノビフェニル、オクタフルオロベンジジン、4,4′−ジアミノジフェニルエーテル、2,2−ビス(p−アミノフェニル)ヘキサフルオロプロパン、1,3−ビス(アニリノ)ヘキサフルオロプロパン、1,4−ビス(アニリノ)オクタフルオロブタン、1,5−ビス(アニリノ)デカフルオロペンタン、1,7−ビス(アニリノ)テトラデカフルオロヘプタン、2,2′−ビス(トリフルオロメチル)−4,4′−ジアミノジフェニルエーテル、3,3′−ビス(トリフルオロメチル)−4,4′−ジアミノジフェニルエーテル、3,3′,5,5′−テトラキス(トリフルオロメチル)−4,4′−ジアミノジフェニルエーテル、3,3′−ビス(トリフルオロメチル)−4,4′−ジアミノベンゾフェノン、4,4′−ジアミノ−p−テルフェニル、1,4−ビス(p−アミノフェニル)ベンゼン、p−ビス(4−アミノ−2−トリフルオロメチルフェノキシ)ベンゼン、ビス(アミノフェノキシ)ビス(トリフルオロメチル)ベンゼン、ビス(アミノフェノキシ)テトラキス(トリフルオロメチル)ベンゼン、2,2−ビス{4−(4−アミノフェノキシ)フェニル}ヘキサフルオロプロパン、2,2−ビス{4−(3−アミノフェノキシ)フェニル}ヘキサフルオロプロパン、2,2−ビス{4−(2−アミノフェノキシ)フェニル}ヘキサフルオロプロパン、2,2−ビス{4−(4−アミノフェノキシ)−3,5−ジメチルフェニル}ヘキサフルオロプロパン、2,2−ビス{4−(4−アミノフェノキシ)−3,5−ジトリフルオロメチルフェニル}ヘキサフルオロプロパン、4,4′−ビス(4−アミノ−2−トリフルオロメチルフェノキシ)ビフェニル、4,4′−ビス(4−アミノ−3−トリフルオロメチルフェノキシ)ビフェニル、4,4′−ビス(4−アミノ−2−トリフルオロメチルフェノキシ)ジフェニルスルホン、4,4′−ビス(3−アミノ−5−トリフルオロメチルフェノキシ)ジフェニルスルホン、2,2−ビス{4−(4−アミノ−3−トリフルオロメチルフェノキシ)フェニル}ヘキサフルオロプロパン、ビス{(トリフルオロメチル)アミノフェノキシ}ビフェニル、ビス〔{(トリフルオロメチル)アミノフェノキシ}フェニル〕ヘキサフルオロプロパン、ビス{2−〔(アミノフェノキシ)フェニル〕ヘキサフルオロイソプロピル}ベンゼンなどが挙げられる。上記のテトラカルボン酸二無水物およびジアミンは二種以上を併用してもよい。 Examples of the diamine containing fluorine include 4- (1H, 1H, 11H-eicosafluoroundecanooxy) -1,3-diaminobenzene and 4- (1H, 1H-perfluoro-1-butanoxy) -1. , 3-diaminobenzene, 4- (1H, 1H-perfluoro-1-heptanoxy) -1,3-diaminobenzene, 4- (1H, 1H-perfluoro-1-octanoxy) -1,3-diaminobenzene, 4-pentafluorophenoxy-1,3-diaminobenzene, 4- (2,3,5,6-tetrafluorophenoxy) -1,3-diaminobenzene, 4- (4-fluorophenoxy) -1,3-diamino Benzene, 4- (1H, 1H, 2H, 2H-perfluoro-1-hexanoxy) -1,3-diaminobenzene, 4- (1H, 1H, 2H, 2H- -Fluoro-1-dodecanoxy) -1,3-diaminobenzene, 2,5-diaminobenzotrifluoride, bis (trifluoromethyl) phenylenediamine, diaminotetra (trifluoromethyl) benzene, diamino (pentafluoroethyl) benzene, , 5-diamino (perfluorohexyl) benzene, 2,5-diamino (perfluorobutyl) benzene, 2,2'-bis (trifluoromethyl) -4,4'-diaminobiphenyl, 3,3'-bis ( (Trifluoromethyl) -4,4'-diaminobiphenyl, octafluorobenzidine, 4,4'-diaminodiphenyl ether, 2,2-bis (p-aminophenyl) hexafluoropropane, 1,3-bis (anilino) hexafluoro Propane, 1,4-bis (anilino) oct Fluorobutane, 1,5-bis (anilino) decafluoropentane, 1,7-bis (anilino) tetradecafluoroheptane, 2,2′-bis (trifluoromethyl) -4,4′-diaminodiphenyl ether, 3, 3'-bis (trifluoromethyl) -4,4'-diaminodiphenyl ether, 3,3 ', 5,5'-tetrakis (trifluoromethyl) -4,4'-diaminodiphenyl ether, 3,3'-bis ( (Trifluoromethyl) -4,4'-diaminobenzophenone, 4,4'-diamino-p-terphenyl, 1,4-bis (p-aminophenyl) benzene, p-bis (4-amino-2-trifluoro) Methylphenoxy) benzene, bis (aminophenoxy) bis (trifluoromethyl) benzene, bis (aminophenoxy) tet Lakis (trifluoromethyl) benzene, 2,2-bis {4- (4-aminophenoxy) phenyl} hexafluoropropane, 2,2-bis {4- (3-aminophenoxy) phenyl} hexafluoropropane, 2, 2-bis {4- (2-aminophenoxy) phenyl} hexafluoropropane, 2,2-bis {4- (4-aminophenoxy) -3,5-dimethylphenyl {hexafluoropropane, 2,2-bis} 4- (4-aminophenoxy) -3,5-ditrifluoromethylphenyl @ hexafluoropropane, 4,4'-bis (4-amino-2-trifluoromethylphenoxy) biphenyl, 4,4'-bis (4 -Amino-3-trifluoromethylphenoxy) biphenyl, 4,4'-bis (4-amino-2-trifluoromethylf Noxy) diphenylsulfone, 4,4'-bis (3-amino-5-trifluoromethylphenoxy) diphenylsulfone, 2,2-bis {4- (4-amino-3-trifluoromethylphenoxy) phenyl} hexafluoro Propane, bis {(trifluoromethyl) aminophenoxy} biphenyl, bis [{(trifluoromethyl) aminophenoxy} phenyl] hexafluoropropane, bis {2-[(aminophenoxy) phenyl] hexafluoroisopropyl} benzene and the like Can be Two or more of the above tetracarboxylic dianhydrides and diamines may be used in combination.
図2は本発明の光導波路フィルムの製造方法の一つの実施態様を示す図である。図2に従い、本発明の製造方法を説明する。酸化シリコンの被膜を形成したシリコン基板1(厚みは好ましくは0.5〜10μm)上に、ポリイミド系樹脂からなる下部クラッド2(厚みは好ましくは5〜30μm)を設ける(図2−(a))。下部クラッド2の上にフォトブリーチング材料からなるコア層(厚みは好ましくは4〜15μm)を設ける(図2−(b))。コア形状のマスクを介して前記コア層をUV露光する(図2−(c))。UV露光された部分のフォトブリーチング材料の屈折率が変化し、コア3及び側部クラッド4が形成される(図2−(d))。コア3及び側部クラッド4を覆うようにポリイミド系樹脂からなる上部クラッド5(厚みは好ましくは5〜30μm)を設ける(図2−(e))。
FIG. 2 is a view showing one embodiment of the method for producing an optical waveguide film of the present invention. The manufacturing method of the present invention will be described with reference to FIG. A lower clad 2 (preferably 5 to 30 μm in thickness) made of a polyimide resin is provided on a silicon substrate 1 (preferably 0.5 to 10 μm in thickness) on which a silicon oxide film is formed (FIG. 2A). ). A core layer (preferably, 4 to 15 μm in thickness) made of a photobleaching material is provided on the lower clad 2 (FIG. 2B). The core layer is exposed to UV through a core-shaped mask (FIG. 2- (c)). The refractive index of the photobleaching material in the UV-exposed portion changes, and the core 3 and the
また、本発明の他の態様としては、上記製造方法において、下部クラッド2または上部クラッド5のいずれかをポリイミド系樹脂からなる材料を用いて設け、残りのいずれかのクラッドをポリイミド系樹脂以外の樹脂材料、好ましくはポリシラン類を用いて設ける。
本発明の他の好ましい態様としては、上記製造方法において、下部クラッド2をポリイミド系樹脂からなる材料を用いて設け、上部クラッド5をポリシラン類材料を用いて設ける。
Further, as another aspect of the present invention, in the above manufacturing method, one of the lower clad 2 and the upper clad 5 is provided using a material made of a polyimide resin, and any of the remaining clads is made of a material other than the polyimide resin. It is provided using a resin material, preferably a polysilane.
As another preferred embodiment of the present invention, in the above-described manufacturing method, the lower clad 2 is provided using a material made of a polyimide resin, and the upper clad 5 is provided using a polysilane material.
このようにして製造されたシリコン基板上の光導波路構造を水に浸漬してシリコン基板から剥離することにより、本発明の光導波路フィルムが製造される(図2−(f))。 The optical waveguide structure of the present invention is manufactured by immersing the optical waveguide structure thus manufactured on the silicon substrate in water and peeling it from the silicon substrate (FIG. 2- (f)).
本発明の製造方法のより好ましい実施態様は、上記製造方法において、コアとなるべき部分以外の部分をUV露光する工程の後、ポストベークを行う工程を更に含む。ポストベーク工程により、比屈折率が安定するため好ましい。ポストベークは、300〜400℃で、10〜60分(時間)程度行うことが好ましい。 A more preferred embodiment of the manufacturing method of the present invention further includes a step of performing post-baking after the step of exposing a portion other than a portion to be a core to UV exposure in the above-described manufacturing method. The post-bake step is preferable because the relative refractive index is stabilized. Post-baking is preferably performed at 300 to 400 ° C. for about 10 to 60 minutes (hour).
コアとなるべき部分以外の部分をUV露光する工程は、より具体的にコアに該当する箇所にマスクを施し、マスク上から前記マスクを施していない箇所をUV照射して、フォトブリーチング材料の屈折率を変化させ、元の屈折率、すなわちコアとして残存する部分の屈折率より低い屈折率に変化させることを含む。 The step of exposing a portion other than a portion to be a core to UV exposure is more specifically performed by applying a mask to a portion corresponding to the core and irradiating a portion of the unmasked portion with UV from above the mask to form a photobleaching material. Changing the refractive index includes changing the original refractive index, that is, the refractive index lower than the refractive index of the portion remaining as the core.
コア層をUV露光するのに用いるUV光源としては、紫外線領域、望ましくは250nm以下の波長域を有する光源が挙げられ、具体的にはキセノン−水銀ランプなどが挙げられる。照射強度は1μm当たり、0.2J/cm2程度であるが、膜厚によって適宜変更し得る。 The UV light source used for UV exposure of the core layer includes a light source having an ultraviolet region, preferably a wavelength region of 250 nm or less, and specifically includes a xenon-mercury lamp. The irradiation intensity is about 0.2 J / cm 2 per 1 μm, but can be appropriately changed depending on the film thickness.
ポリイミド系樹脂前駆体溶液は、スピナあるいは印刷などによる方法により基板表面上に塗布され、最終温度200〜400℃で熱処理し硬化されてポリイミド系樹脂被膜とされる。ポリイミド系樹脂以外の樹脂についても公知の方法に従い、形成することができる。 The polyimide-based resin precursor solution is applied on the substrate surface by a method such as spinner or printing, and heat-treated at a final temperature of 200 to 400 ° C. to be cured to form a polyimide-based resin film. Resins other than the polyimide resin can be formed according to a known method.
本発明においてフィルムの弾性率とは、以下に述べるインデンテーション法により測定を行ったものをいう。インデンテーション法は試料に圧子を連続的に負荷および除荷し、得られた加重−変異曲線から材料の硬さや弾性率など弾塑性変形に関する特性を定量的に評価する方法である。インデンテーション法において特に1nmから1μmオーダーの圧入深さ及び1μNから1mNのオーダーの加重を測定するナノインデンターにより測定を行う。概略を述べると、四角錐(ビッカース)圧子を試料に押し込み、そのときの圧入荷重(P)と圧入深さ(h)を測定し、弾性率が一定(飽和)になるまでPとhを変化させて、弾性率を求める。具体的には、例えば、超軽荷重薄膜硬度テスタ(Hysitron Inc.製、Triboscope system + Digital Instruments製Nanoscope-III-D3100型付属)を用い、サイズが曲率半径約150nmの圧子(Berkovic)により、押し込みスピード100μN/secで測定を行う。 In the present invention, the elastic modulus of the film means a value measured by an indentation method described below. The indentation method is a method of continuously loading and unloading an indenter on a sample, and quantitatively evaluating characteristics relating to elasto-plastic deformation such as hardness and elastic modulus of the material from the obtained load-mutation curve. In the indentation method, the measurement is carried out by a nano indenter which measures a press-fit depth on the order of 1 nm to 1 μm and a load on the order of 1 μN to 1 mN. Briefly, a square pyramid (Vickers) indenter is pushed into the sample, the press-fit load (P) and press-fit depth (h) are measured, and P and h are changed until the elastic modulus becomes constant (saturated). Then, the elastic modulus is obtained. Specifically, for example, using an ultra-light load thin film hardness tester (Hysitron Inc., Triboscope system + Digital Instruments Nanoscope-III-D3100 attached), press in with an indenter (Berkovic) having a radius of curvature of about 150 nm. Measure at a speed of 100 μN / sec.
以下、本発明の実施例を説明する。
実施例1
表面に2μm厚のSiO2膜を形成した、直径約12.7cm厚さ約1mmのシリコンウエハ基板上に、クラッド形成用の、フッ素を含むポリイミド系樹脂前駆体溶液(日立化成工業(株)製商品名OPI−N1005)を滴下しスピン塗布(1500rpm/30秒)を行った後にオーブン(100℃/30分+200℃/30分+350℃/60分)で硬化して下部クラッド層(膜厚約10μm)を形成した。
Hereinafter, examples of the present invention will be described.
Example 1
A fluorine-containing polyimide resin precursor solution for cladding formation (manufactured by Hitachi Chemical Co., Ltd.) on a silicon wafer substrate having a diameter of about 12.7 cm and a thickness of about 1 mm having a 2 μm thick SiO 2 film formed on its surface. (Trade name: OPI-N1005) was dropped and spin coated (1500 rpm / 30 seconds), and then cured in an oven (100 ° C./30 minutes + 200 ° C./30 minutes + 350 ° C./60 minutes) to form a lower cladding layer (film thickness: approx. 10 μm).
次にコア形成用の、グラシアWG−004(日本ペイント製)を滴下しスピン塗布(2000rpm/30秒)を行った後にオーブン(100℃/30分+200℃/30分)で硬化してコア層(膜厚約6.5μm)を形成した。
このコア層を、コアパターンを有するマスクを介してキセノン−水銀ランプにてUV露光した(0.4mW/cm2、60分)。その後、ポストベーク100℃/30分+200℃/30分+350℃/30分を行った。
Next, Gracia WG-004 (manufactured by Nippon Paint Co., Ltd.) for forming a core was dropped, spin-coated (2000 rpm / 30 seconds), and then cured in an oven (100 ° C./30 minutes + 200 ° C./30 minutes) to form a core layer. (Thickness: about 6.5 μm).
This core layer was exposed to UV through a mask having a core pattern by a xenon-mercury lamp (0.4 mW / cm 2 , 60 minutes). Thereafter, post-baking was performed at 100 ° C./30 minutes + 200 ° C./30 minutes + 350 ° C./30 minutes.
次に上部クラッド形成用の、フッ素を含むポリイミド系樹脂前駆体溶液(日立化成工業(株)製商品名OPI−N1005)を滴下しスピン塗布(1200rpm/30秒)を行い、次いでオーブン(100℃/30分+200℃/30分+350℃/60分)で硬化して上部クラッド層(膜厚は、コアの直上で約10μm)を形成した。 Next, a polyimide-based resin precursor solution containing fluorine (OPI-N1005 manufactured by Hitachi Chemical Co., Ltd.) for forming the upper clad is dropped and spin-coated (1200 rpm / 30 seconds), and then oven (100 ° C.) / 30 minutes + 200 ° C./30 minutes + 350 ° C./60 minutes) to form an upper clad layer (thickness: about 10 μm immediately above the core).
得られた光導波路の伝搬損失をカットバック法で測定し、光導波路フィルムの伝搬損失とした。具体的には、3cm、2cm、1cmの長さにした光導波路における損失を測定し、その損失の傾きを伝搬損失として測定したところ良好な伝搬損失が得られた。
得られた基板上の光導波路を水(温度100℃)に30分間浸漬すると、光導波路が基板から容易に剥離され、光導波路フィルムが得られた。
The propagation loss of the obtained optical waveguide was measured by a cutback method, and the measured value was defined as the propagation loss of the optical waveguide film. Specifically, a loss in an optical waveguide having a length of 3 cm, 2 cm, and 1 cm was measured, and a slope of the loss was measured as a propagation loss. As a result, a good propagation loss was obtained.
When the obtained optical waveguide on the substrate was immersed in water (temperature: 100 ° C.) for 30 minutes, the optical waveguide was easily peeled off from the substrate, and an optical waveguide film was obtained.
また、フィルムの弾性率を上述した方法及び装置により測定したところ、良好な弾性率を示した。測定条件は、超軽荷重薄膜硬度テスタ(Hysitron Inc.製、Triboscope system + Digital Instruments製Nanoscope-III-D3100型付属)を用い、サイズが曲率半径約150nmの圧子(Berkovic)により、押し込みスピード100μN/secで測定を行った。 In addition, when the elastic modulus of the film was measured by the method and the apparatus described above, a favorable elastic modulus was shown. The measurement conditions are as follows: Using an ultra-light load thin film hardness tester (Hysitron Inc., Triboscope system + Digital Instruments Nanoscope-III-D3100 attached), indentation speed of 100 μN / The measurement was performed in sec.
実施例2
実施例1と全く同様にしてシリコンウエハ基板上に下部クラッド層及びコア層を形成した。
次に上部クラッド形成用の材料グラシアWG−005(日本ペイント製)を滴下し、スピン塗布(1000rpm/30秒)を行った後にオーブン(100℃/30分+200℃/30分+350℃/30分)で硬化して上部クラッド層(膜厚約20μm)を形成した。
得られた光導波路について、伝搬損失を同様に測定したところ、同様に良好な伝搬損失が得られた。
Example 2
A lower clad layer and a core layer were formed on a silicon wafer substrate in exactly the same manner as in Example 1.
Next, a material for forming an upper clad, Gracia WG-005 (manufactured by Nippon Paint Co., Ltd.), was dropped, and spin coating (1000 rpm / 30 seconds) was performed. ) To form an upper cladding layer (film thickness: about 20 μm).
When the propagation loss of the obtained optical waveguide was measured in the same manner, similarly good propagation loss was obtained.
次に得られた光導波路を水(温度100℃)に30分間浸漬して、光導波路を基板から剥離し、光導波路フィルムを製造した。得られたフィルムの弾性率を実施例1と同様に測定したところ、良好な弾性率を示した。 Next, the obtained optical waveguide was immersed in water (temperature: 100 ° C.) for 30 minutes, and the optical waveguide was peeled off from the substrate to produce an optical waveguide film. When the elastic modulus of the obtained film was measured in the same manner as in Example 1, it showed a good elastic modulus.
1・・・シリコン基板
2・・・下部クラッド
3・・・コア
4・・・側部クラッド
5・・・上部クラッド
DESCRIPTION OF
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| US7657140B2 (en) | 2006-04-07 | 2010-02-02 | Omron Corporation | Optical cable module |
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