JP2004213002A - Organic electroluminescent device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic electroluminescent device having advantages such as a high aperture ratio, a high production yield, and easy manufacturing and assembly, and a method for manufacturing the same.
SOLUTION: The organic electroluminescent device of the present invention has a double plate structure in which a thin film transistor array portion is formed on a first substrate, and an organic light emitting portion is formed on a second substrate bonded to the first substrate. It is. A first connection electrode of the thin film transistor array unit and a second electrode of the light emitting unit are in contact with each other, and a signal of the thin film transistor array unit is transmitted to the light emitting unit through the connection electrode. In addition, a common electrode for transmitting a signal to the first electrode of the light emitting unit is configured outside the thin film transistor array unit, and a second connection electrode connecting the common electrode and the first electrode is further configured.
In the above-described configuration, in order to prevent contact between the second connection electrode and the light emitting unit, a dummy pixel is additionally formed on the outer periphery of the thin film transistor array unit, that is, outside the common electrode. The dummy pixel serves as an alignment margin of a mask used in forming the second electrode.
[Selection] Fig. 6

Description

  The present invention relates to an organic electroluminescent device, and more particularly, to a double plate structure in which a first substrate constitutes a thin film transistor array portion and a second substrate joined to the first substrate constitutes an organic electroluminescent portion. And an organic electroluminescent device (DPOLED).

  In general, an organic electroluminescent device has an electron-injection electrode (electron-cathode) and a hole-injection electrode (hole-anode) in which electrons (electrons) and holes (holes) are respectively injected into a light emitting layer. A device that emits light when an exciton, in which injected electrons and holes are combined, falls from an excited state to a ground state.

  According to this principle, unlike the conventional thin film liquid crystal display device, a separate light source is not required, so that there is an advantage that the volume and weight of the device can be reduced.

Note that the organic electroluminescent device exhibits high quality panel characteristics (low power, high volatility, high reaction rate, low weight). Due to these characteristics, OELD is considered to be a powerful next-generation display device that can be used in most home electronic application products such as mobile communication terminals, CNS, PDAs, Camcorders, and Palm PCs.
In addition, there is an advantage that the production cost can be reduced more than the existing LCD because the manufacturing process is simple.

  The method of driving such an organic electroluminescent device can be classified into a passive matrix type and an active matrix type.

  The passive matrix organic electroluminescent device has a simple structure and a simple manufacturing method, but has a difficulty in increasing the area of the display device with high power consumption, and the opening increases as the number of wirings increases. There is a disadvantage that the rate decreases.

  On the other hand, the active matrix type organic electroluminescent device has advantages that it can provide high luminous efficiency and high image quality.

  FIG. 1 is a diagram schematically illustrating a configuration of a conventional organic electroluminescent device.

  As shown, the organic electroluminescent device (10) is electrically connected to a thin film transistor array (14) including a thin film transistor (T) on a transparent first substrate (12) and a thin film transistor array (14). A first electrode (16), an organic light emitting layer (18), and a second electrode (20).

  At this time, the organic light emitting layer (18) expresses the colors of red (R), green (G), and blue (B), but in a general method, red, A separate organic material that emits green and blue light is patterned and used.

  The first substrate (12) is bonded through the sealant (26) to the second substrate (28) to which the hygroscopic agent (22) is attached to complete the encapsulated organic electroluminescent device (10). .

  At this time, the desiccant (22) is for removing moisture and oxygen that may permeate into the capsule, and etches a part of the second substrate (28). Fill with moisture absorbent (22) and secure with tape (25).

  FIG. 2 is a plan view schematically showing a thin film transistor array unit included in a conventional organic electroluminescent device.

Generally, an active matrix type thin film transistor array unit includes a switching element (T _S ), a driving element (T _D ), and a storage capacitor (C _ST ) for each of a large number of pixels defined on the first substrate (12). The switching element (T _S ) or the driving element (T _D ) can be configured by a combination of one or more thin film transistors, respectively, according to operation characteristics.

  At this time, the first substrate (12) uses a transparent insulating substrate, and the material thereof may be glass or plastic.

  As shown in the figure, a gate wiring (32) formed on a first substrate (12) and spaced apart from each other by a predetermined distance and a data wiring (32) intersecting the gate wiring (32) with an insulating film interposed therebetween. 34) is configured.

  At the same time, a power supply wiring (35) is formed parallel to the data wiring (34) and intersecting with the gate wiring (32).

The switching element (T _S ) and the driving element (T _D ) include a gate electrode (36, 38), an active layer (40, 42), a source electrode (46, 48), and a drain electrode (50, 52), respectively. Thin film transistors are used.

In the above-described configuration, the gate electrode (36) of the switching element (T _S ) is connected to the gate line (32), and the source electrode (46) is connected to the data line (34).

A drain electrode (50) of the switching element (T _S ) is connected to a gate electrode (38) of the driving element (T _D ) through a contact hole (54).

A source electrode (48) of the driving element (T _D ) is connected to the power line (35) through a contact hole (56).

Note that the drain electrode (52) of the driving element (T _D ) is configured to be in contact with the first electrode (16) provided in the pixel portion (P).

At this time, the power supply wiring (35) and the capacitor first electrode (15), which is a polycrystalline silicon layer thereunder, are overlapped with an insulating film therebetween to form a storage capacitor (C _ST ).

  Hereinafter, FIG. 3 is a plan view schematically illustrating a planar configuration of the organic electroluminescent device having the above-described array configuration.

As shown, a data pad section (E) is formed on one side of the display area of the first substrate (12), and a gate pad section (F1, F1) is formed on both sides of the display area that is not parallel to the data pad section (E). F2) are respectively configured.
A common electrode (39) is formed on one side of the display area parallel to the data pad section (E).

  At this time, the common electrode (39) serves to maintain the potential of the second electrode by applying a common voltage to the second electrode (a cathode electrode and an electrode (20 in FIG. 1) for inputting a common voltage). do.

  Hereinafter, a cross-sectional configuration of a conventional organic electroluminescent device will be described with reference to FIGS. 4A and 4B.

  4A is a cross-sectional view taken along the line IVa-IVa of FIG. 2, and FIG. 4B is a cross-sectional view taken along the line IVb-IVb of FIG.

As illustrated, the organic electroluminescent device includes a thin film transistor (T _D ) as a driving device including a gate electrode (38), an active layer (42), a source electrode (48), and a drain electrode (52). And a first electrode (anode electrode) (16) that is in contact with the drain electrode (52) of the drive element (T _D ) with an insulating film (57) interposed therebetween on the drive element (T _D ). A light emitting layer (18) that emits light of a specific color is formed on the first electrode (16), and a second electrode (cathode electrode) (20) is formed on the light emitting layer (18).

The first electrode (16), the light emitting layer (18), and the second electrode (20) constitute an _{electroluminescent} diode ( _DEL ).

A storage capacitor (C _ST ) is configured in parallel with the driving element (T _D ), and a source electrode (56) is configured to be in contact with a second electrode (power supply wiring) (35a) of the storage capacitor (C _ST ). The capacitor first electrode (15) is formed below the second electrode (35a).

A second electrode (20) is formed on the entire surface of the substrate on which the driving element (T _D ), the storage capacitor (C _ST ), and the organic light emitting layer (18) are formed.

  In the above-described configuration, a common electrode (39) for applying a common voltage to the second electrode (20) is formed on the outer periphery of the first substrate (12) with the same layer and the same material as the gate electrodes of the driving element and the switching element. Form.

  The common electrode (39) is partially exposed by a first contact hole (50) and a second contact hole (52) formed by etching a plurality of insulating films formed thereon, and the second electrode (20) is The first contact hole (50) is in contact with the common electrode (39), and the second contact hole (52) is a power supply unit externally connected to the common electrode to be transmitted to the second electrode (20). This is a configuration for connecting an external power supply wiring (not shown) and a common electrode in order to input a voltage.

  Through the above-described configuration, a conventional organic electroluminescent device can be manufactured.

  However, when a thin-film transistor array section and a light-emitting section are formed on a single substrate as in the conventional case, twice the yield of the thin-film transistor and the yield of the organic light-emitting layer are twice as large as that of the panel on which the thin-film transistor and the organic light-emitting layer are formed. Determine the rate.

  Therefore, the conventional substrate has a problem that the yield of the panel is greatly limited by the yield of the organic light emitting layer.

In particular, even if a thin film transistor is formed satisfactorily, if a defect occurs due to a foreign substance or other factors during the formation of an organic light emitting layer using a thin film of about 1000, the panel is determined to be defective.
This leads to a loss of various costs and raw material costs required for manufacturing a good thin film transistor, and has a problem that the overall yield is reduced.

  In addition, the above-described bottom emission method has a problem in that it is difficult to apply to a high resolution product due to a limitation of an aperture ratio, while having high stability and a high degree of freedom of a process due to encapsulation.

  Although not described above, in the upper light emitting method, since the light is emitted to the upper part, the direction in which the light is emitted is irrelevant to the lower thin film transistor array part, so that the thin film transistor design is easy and the aperture ratio can be improved. However, in the existing top emission type structure, the cathode is usually located above the organic electroluminescent layer, so that the material selection is narrow, the transmittance is limited, and the light efficiency is reduced. When a thin film type protective film must be formed in order to minimize the decrease in light transmittance, there is a problem that the outside air cannot be sufficiently shut off.

  The present invention has been proposed to solve such problems, after forming the thin film transistor array unit and the light emitting unit on a separate substrate, the top emitting organic electroluminescent device that is combined with this, and the A manufacturing method is proposed.

  The organic electroluminescent device having the double plate structure as described above constitutes a first connection electrode that connects a driving element of the thin film transistor array unit and a second electrode of the light emitting unit, and is configured on an outer periphery of the array substrate. The common electrode is configured in a higher layer than the existing one. Note that a second connection electrode is further formed to facilitate connection between the common electrode and a first electrode (anode electrode) formed on the upper substrate.

  At this time, a dummy pixel having a partition at the boundary of the display unit corresponding to the inside of the common electrode is added to the planar configuration of the light emitting element.

  No switching and driving elements are formed on the array substrate corresponding to the dummy pixels. Therefore, during the process, even if a defect occurs in which the first electrode and the second electrode of the light emitting unit come into contact due to an error in the process, this does not affect the light emitting operation.

  This is because not only is the second electrode independently patterned for each pixel area, but also the second electrode formed in the dummy pixel is electrically connected to the lower drive element, so that it is electrically floating. This is because it is in a state of being left.

  The configuration as described above can solve the problem of the conventional organic electroluminescent device, and the first electrode of the light emitting unit connected to the common electrode contacts with the second electrode of the light emitting unit. Can be prevented.

  Accordingly, an organic electroluminescent device having a high aperture ratio and high image quality can be manufactured, and the yield can be improved.

  The organic electroluminescent device according to the features of the present invention for achieving the above-described object is spaced apart from each other, and has a first substrate having a display portion and a peripheral portion including a large number of pixel regions and dummy pixel regions, and A second substrate; a plurality of driving thin film transistors formed on an inner surface of the first substrate and adjacent to each of the plurality of pixel regions; a first connection electrode connected to each of the plurality of driving thin film transistors; (2) a first electrode formed on the inner surface of the substrate; a plurality of pixel regions on the first electrode and partitions formed on respective edges of the dummy pixel region; and an organic light-emitting formed on the first electrode. A second electrode formed in each of the plurality of pixel regions and the dummy pixel region above the organic light emitting layer, wherein the second electrode formed in each of the plurality of pixel regions is the first electrode, Connecting electrode A second electrode connected; includes a sealant to attach the first substrate and the second substrate.

  The semiconductor device may further include a pad formed on a peripheral portion of the inner surface of the first substrate; and a second connection electrode connected to the pad and having the same layer and the same material as the first connection electrode.

  The second electrode of the dummy pixel region is electrically floating, and each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode.

  Each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode, and the pad is formed of the same material as the driving source and the driving drain electrode.

  The driving thin film transistor may further include a plurality of switching thin film transistors connected to the plurality of driving thin film transistors and each including a switching active layer, a switching gate electrode, a switching source and a switching drain electrode. It can be made of silicon.

  The switching source electrode is connected to the data line, the switching drain electrode is connected to the driving gate electrode, and the switching gate electrode is connected to a gate line.

  The display device may further include a power line connected to the driving thin film transistor, and may further include a storage capacitor connected to the driving thin film transistor.

  The first electrode is an anode for injecting holes into the organic light emitting layer, the second electrode is a cathode for injecting electrons into the organic light emitting layer, and the first electrode is indium-tin. -Oxide (ITO) and one of indium-zinc-oxide (IZO), the second electrode is one of calcium (Ca), aluminum (Al), magnesium (Mg). Be composed.

  The semiconductor device may further include an auxiliary electrode formed between the first connection electrode and the second connection electrode and made of the same material as the second electrode, wherein the dummy pixel region surrounds the plurality of pixel regions. The liquid crystal display may further include an auxiliary insulating layer formed between the first electrode and at least one of the partition walls.

  Meanwhile, the method for manufacturing an organic electroluminescent device according to the present invention includes the steps of: preparing a first substrate having a display portion and a peripheral portion including a plurality of pixel regions and a dummy pixel region; and forming the plurality of pixels on the first substrate. Forming a plurality of driving thin film transistors adjacent to each of the regions; forming a first connection electrode connected to each of the plurality of driving thin film transistors; and forming a first electrode on the second substrate. Forming a plurality of pixel regions on the first electrode and partitions on each edge of the dummy pixel region; and forming an organic light emitting layer on the first electrode; and forming the organic light emitting layer on the organic light emitting layer. Forming a second electrode in each of the plurality of pixel regions and the dummy pixel region so that the second electrodes formed in each of the plurality of pixel regions are connected to the first connection electrode; 2nd Forming a; comprising the step of attaching the first substrate and the second substrate with a sealant.

  Forming a pad around the inner surface of the first substrate; and forming a second connection electrode connected to the pad and connected to the first electrode when the first and second substrates are joined. And each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode.

  Each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode, and the pad is formed simultaneously with the driving source and driving drain electrodes and connected to the plurality of driving thin film transistors. And forming a plurality of switching thin film transistors each including a switching active layer, a switching gate electrode, a switching source and a switching drain electrode.

  The driving active layer and the switching active layer may be formed of polycrystalline silicon, the switching source electrode is connected to the data line, the switching drain electrode is connected to the driving gate electrode, and the switching gate electrode is a gate. Connected to wiring.

  The method may further include forming a power line connected to the driving thin film transistor, and further including forming a storage capacitor connected to the driving thin film transistor.

  The first electrode is an anode for injecting holes into the organic light emitting layer, the second electrode is a cathode for injecting electrons into the organic light emitting layer, and the first electrode is indium. The second electrode is composed of one of tin-oxide (ITO) and indium-zinc-oxide (IZO), and the second electrode is one of calcium (Ca), aluminum (Al), and magnesium (Mg). It consists of.

  The method may further include forming an auxiliary electrode between the first connection electrode and the second connection electrode at the same time as the second electrode, wherein the dummy pixel region surrounds the plurality of pixel regions.

  The method may further include forming an auxiliary insulating layer between the first electrode and at least one of the barrier ribs.

  Meanwhile, the method of manufacturing an organic electroluminescent device according to the present invention includes the steps of: forming a first insulating layer on a first substrate having a display portion and a peripheral portion including a plurality of pixel regions and a dummy pixel region; Forming an active layer made of polycrystalline silicon and including source and drain regions in each of the plurality of pixel regions above the layer; forming a second insulating layer above the active layer; Forming a gate electrode on the second insulating layer corresponding to: a step of forming a third insulating layer on the gate electrode; and a first contact exposing the source region on the third insulating layer. Forming a fourth insulating layer having a hole and a second contact hole exposing the drain region; and connecting to the source region through the first contact hole above the fourth insulating layer. Forming a source electrode and a drain electrode connected to the drain region through the second contact hole; a fifth insulating layer having a third contact hole on the source and drain electrodes to expose the drain electrode Forming a first connection electrode connected to the drain electrode through the third contact hole on the fifth insulating layer; and forming a first connection electrode on the second substrate having the display portion and the peripheral portion. Forming a first electrode; forming a plurality of pixel regions on the first electrode and forming partitions on respective edges of the dummy pixel region; and forming an organic light emitting layer on the first electrode. Forming a second electrode in each of the plurality of pixel regions on the organic light emitting layer; and a first substrate such that the first connection electrode contacts the second electrode using a sealant. Comprising the step of depositing a second substrate.

  The first insulating layer, the third insulating layer, the fourth insulating layer, and the fifth insulating layer are sequentially formed in the dummy pixel region on the inner surface of the first substrate, and a pad is formed on a peripheral portion above the fourth insulating layer. Forming a pad so that the fifth insulating layer has a fourth contact hole and a fifth contact hole exposing the pad; and forming the fourth contact on the pad on the fifth insulating layer. The method may further include forming a second connection electrode connected to the first electrode when the first substrate and the second substrate are connected through the hole.

  The organic electroluminescent device according to the present invention has the following effects.

  First, since it is of the top emission type, it is not affected by the shape of the lower array pattern, so that a high aperture ratio can be ensured.

  Second, since the organic electroluminescent layer is formed separately from the upper part of the thin film transistor array pattern without being formed, it is not necessary to consider the influence that may be exerted on the thin film transistor during the process of forming the organic electroluminescent layer. Since it is good, the yield can be improved.

  Third, by adding an electrically floating dummy pixel to the periphery of the display unit and connecting it to the common electrode, the exposed first electrode is connected to the second electrode of the organic light emitting unit. It is a structure that can be completely electrically floated.

  That is, the dummy pixel functions as an alignment margin during a mask process for forming the second electrode.

  Therefore, it is possible to prevent the occurrence of a signal defect while securing the process margin and improving the yield in the process.

  Hereinafter, the best mode for carrying out the present invention will be described with reference to the attached drawings.

  The present invention is characterized in that a dummy pixel is further formed at the boundary of the display unit in the organic electroluminescent device having a double plate structure.

FIG. 5 is a plan view schematically showing a plane configuration of the organic electroluminescent device according to the present invention.
As shown in the drawing, the organic electroluminescent device (99) according to the present invention includes a first substrate (100) having a thin film transistor array portion and a second substrate (200) having an organic light emitting portion. The two substrates (200) are bonded together through the sealant (300).

  A common electrode (126), which is arranged outside the first substrate (100) and receives a common voltage, is formed over a joint boundary between the first substrate (100) and the second substrate (200).

Further, a dummy pixel (dummy pixel, P _D ) is further formed on the boundary (G) of the inner display portion of the common electrode (126).

No driving element and no switching element are formed on the first substrate corresponding to the dummy pixel.
Hereinafter, a schematic cross-sectional configuration of the organic electroluminescent device having the planar configuration as described above will be described with reference to FIG.

  FIG. 6 is a cross-sectional view taken along the line VI-VI of FIG. 5 and schematically illustrating the same.

(For convenience, only the cross-sectional configuration corresponding to the driving element and the pixel region of the thin film transistor array section is continuously displayed.)
As shown, the organic electroluminescent device (99) according to the present invention is configured by bonding a transparent first substrate (100) and a second substrate (200) through a sealant (300).

  A large number of pixel units (light emitting units) (P) are defined on the first substrate (100), and a thin film transistor (switching element and driving element) (T) and an array are provided for each side of each pixel unit (P). Wiring (not shown) is configured.

  A first electrode (202), which is a transparent hole injection electrode, is formed on the second substrate (200).

  On the first electrode (202), a partition (204) is formed corresponding to the boundary of the pixel region (P), and corresponding to the pixel region (P) inside the partition (204), the organic light emitting layer ( 206) and the second electrode (208) are sequentially formed. An auxiliary insulation pattern (203) is further formed between the partition (204) and the first electrode (202).

The second electrode (208) and the drain electrode (122) of the driving element (T _D ) are indirectly connected through a separate first connection electrode (130). That is, if the first connection electrode (130) is formed on a first substrate (100) and the first substrate (100) and the second substrate (200) are bonded together, the first connection electrode (130) becomes a light emitting layer. It comes into contact with the second electrode (208) which is the electron injection electrode formed on the upper part of (204).

  In the above-described configuration, a common electrode (126) is formed on an outer periphery of the first substrate (100), and a second connection electrode (132) that is in contact with the common electrode (126) is further configured to form a second substrate (100). The contact with the first electrode (202) configured in (200) is facilitated.

  At this time, since the first electrode (202) is a transparent electrode and has high resistance, an auxiliary electrode (210) is formed on the exposed first electrode (202) with the same material as the second electrode. I do.

At this time, the inside of the common electrode (126) is further configured dummy pixel (P _D) around the light emitting element, the first substrate (100) of the portion corresponding to the dummy pixel (P _D) and the drive element Since the switching element is not configured, the second electrode (208) of the light emitting unit configured corresponding to the dummy pixel (P _D ) is electrically floated.

  Therefore, even if the first electrode (202) comes into contact with the second electrode (208) due to an error in the process, it is possible to prevent the light emitting unit from being driven at all.

  Hereinafter, a process of forming a thin film transistor array according to the present invention will be described with reference to FIGS. 7A to 7D and FIGS. 8A to 8D.

  7A to 7D are sectional views taken along a portion corresponding to the line IVa-IVa of FIG. 2 and shown in accordance with the process sequence of the present invention, and FIGS. 8A to 8D are line VIII-VIII of FIG. FIG. 2 is a process sectional view cut along the line and shown in accordance with the process sequence of the present invention.

As shown in FIGS. 7A to 8D, a dummy pixel area (P _D ) is additionally defined on the substrate corresponding to a plurality of pixel areas (P), storage areas (C), and boundaries of the display unit.

  A switching area (S) and a driving area (D) are defined on one side of the pixel area (P).

The plurality of regions (D, S, C, P, P _D ) are selected from a silicon insulating material group including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ) on the entire surface of the defined substrate (100). One of them forms a buffer layer (102) as a first insulating film.

  After depositing amorphous silicon (a-Si: H) on the buffer layer (102), a hydrogenation process and a crystallization process using heat are performed to form and pattern a polycrystalline silicon layer. An active layer (104, 105) is formed in the drive area (D) and the storage area (C).

  The active layer (105) formed in the storage region (C) functions as an electrode by depositing impurities on the surface, thereby functioning as a first electrode of a storage capacitor.

  The active layer (104) formed in the drive region (D) defines a first active region (104a) and second active regions (104b) and (104c) on both sides of the first active region (104a).

  Next, a gate insulating film (106) as a second insulating film and a gate electrode (108) are laminated on the first active region (104a).

  At this time, the gate insulating film (106) may be formed on the entire surface of the substrate (100).

The gate insulating film (106) is formed of one selected from a group of inorganic insulating materials including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ).

  Subsequently, the entire surface of the substrate (100) on which the gate electrode (108) is formed is doped with a trivalent or tetravalent impurity (B or P) to make the second active region (104b) an ohmic contact (ohmic contact). contact) region.

  Next, an interlayer insulating film (110) as a third insulating film is formed on the entire surface of the substrate (100) on which the gate electrode (108) is formed.

  The gate electrode (108) is formed of one selected from a conductive metal group including aluminum (Al), aluminum alloy, copper (Cu), tungsten (W), tantalum (Ta), and molybdenum (Mo). In addition, the interlayer insulating film 110 is formed of one selected from the above-described insulating material group.

  Subsequently, a power supply wiring is formed on the storage area (C) using a conductive metal. Part of the power supply wiring passing through the storage area (C) functions as the capacitor second electrode (112a).

  As shown in FIGS.7b and 8b, a fourth insulating film (114) is formed on the entire surface of the substrate (100) on which the capacitor second electrode (112a) is formed and then patterned to form the second active region ( A first contact hole (116) and a second contact hole (118) that respectively expose the 104b) are formed, and a third contact hole (120) that partially exposes the capacitor second electrode (112a) is formed. .

  As shown in FIGS.7c and 8c, a conductive film including chromium (Cr), molybdenum (Mo), tantalum (Ta), tungsten (W), etc. is formed on the entire surface of the substrate (100) on which the interlayer insulating film (110) is formed. A conductive metal is deposited and patterned to form a drain electrode 122 and a source electrode 124 that are in contact with the exposed second active region 104b, respectively.

  At the same time, a common electrode (126) is formed on the outer periphery of the substrate (100).

  Next, a fifth insulating film (128) is formed over the entire surface of the substrate (100) on which the drain electrode (122) and the source electrode (124) and the common electrode (126) are formed, and then patterned to form the drain electrode. A fourth contact hole (134) exposing a part of (122) and fifth and sixth contact holes (136, 128) exposing both sides of the common electrode (126) are formed.

  Subsequently, as shown in FIGS. 7D and 8D, a conductive metal is deposited and patterned on the entire surface of the substrate (100) on which the fifth insulating film (128) is formed, and is brought into contact with the drain electrode (122). Then, a first connection electrode (130) formed in the pixel portion (P) and a second connection electrode (132) that is in contact with the common pad (126) through the fifth contact hole (136) are formed.

  Through the above-described steps, a thin film transistor array substrate according to the present invention can be formed.

In the above-described configuration, the switching element and the driving element are not formed corresponding to the dummy pixel region (P _D ).

  Hereinafter, a process of forming a light emitting unit that contacts the array substrate will be described with reference to FIGS. 9A to 9C.

  9a to 9c are cross-sectional views illustrating a process of manufacturing an organic light emitting layer according to the present invention in order.

As shown in FIG. 9a, a pixel region (P) is defined on a transparent insulating substrate (200) and a dummy pixel region (P _D ) is defined around the substrate (200).

  A first electrode (202) is formed on the entire surface of the substrate (200) in which the region is defined.

  The first electrode (202) is a hole injection electrode for injecting holes into an organic light emitting layer (not shown), and is mainly transparent and has a high work function (work function) indium-tin-oxide (ITO). Is formed by vapor deposition.

  Next, an auxiliary insulating pattern (203) is further formed corresponding to the boundary of the pixel region.

  Next, a partition (204) is formed on the auxiliary insulating pattern.

  The partition 204 is generally formed by applying a photosensitive organic material and patterning the same.

  The auxiliary insulating pattern (203) is configured to prevent a case where a second electrode formed in a subsequent process can contact the first electrode (202) in advance.

  In the above-described configuration, the auxiliary insulating pattern (203) and the partition (204) are preferably formed in a lattice shape.

  Next, as shown in FIG.9b, on the first electrode (202) corresponding to the pixel region (P), red (R), green ( G) An organic light emitting layer (206) that emits blue (B) light is formed.

  At this time, the organic light emitting layer (206) may be configured as a single layer or a multilayer, and when the organic film is configured as a multilayer, a hole transport layer (Hole Transporting Layer) may be provided on the main light emitting layer (206b). (206a) and an electron transporting layer (ETL) (206c).

  Next, as shown in FIG. 9c, a process of depositing a second electrode 208 on the light emitting layer 206 is performed.

  The second electrodes (208) are located corresponding to the respective pixel regions (P) and are configured to be independent of each other.

  At the same time as the step of forming the second electrode (208), an auxiliary electrode (210) that contacts the first electrode is formed outside the substrate.

  The auxiliary electrode (210) is configured to float with the second electrode (208).

  The second electrode 208 may be formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or may be formed of lithium fluoride / aluminum (Li / Al). It can be formed of a heavy metal layer.

  By bonding the thin film transistor array unit and the light emitting unit manufactured through the above-described process, the organic electroluminescent device according to the present invention shown in FIG. 5 can be manufactured.

  The above-described organic electroluminescent device according to the present invention is characterized in that a dummy pixel having a partition wall corresponding to a display boundary inside the common electrode is further formed.

  Such a configuration is a configuration in which a process margin (a dummy pixel region becomes a process margin) can be secured in a step of joining the thin film transistor array unit and the organic light emitting unit, and the first electrode of the organic light emitting unit is This is a structure that is completely electrically floating with the second electrode of the organic light emitting unit.

FIG. 2 is a cross-sectional view schematically illustrating an organic electroluminescent device. FIG. 4 is an enlarged plan view schematically illustrating one pixel of a conventional organic electroluminescent device. FIG. 2 is a plan view schematically illustrating a planar configuration of the organic electroluminescent element. FIG. 4 is a sectional view taken along the line IVa-IVa in FIG. FIG. 4 is a sectional view taken along the line IVb-IVb in FIG. FIG. 2 is a plan view schematically illustrating a planar configuration of an organic electroluminescent device according to the present invention. FIG. 6 is a cross-sectional view schematically illustrating a configuration of the organic electroluminescent device according to the present invention, taken along the line VI-VI of FIG. FIG. 4 is a process cross-sectional view cut along a portion corresponding to the line IVa-IVa of FIG. 2 and illustrated according to the process sequence of the present invention. FIG. 4 is a process cross-sectional view cut along a portion corresponding to the line IVa-IVa of FIG. 2 and illustrated according to the process sequence of the present invention. FIG. 4 is a process cross-sectional view cut along a portion corresponding to the line IVa-IVa of FIG. 2 and illustrated according to the process sequence of the present invention. FIG. 4 is a process cross-sectional view cut along a portion corresponding to the line IVa-IVa of FIG. 2 and illustrated according to the process sequence of the present invention. FIG. 8 is a process cross-sectional view cut along the line VIII-VIII of FIG. 5 and illustrated according to the process sequence of the present invention. FIG. 8 is a process cross-sectional view cut along the line VIII-VIII of FIG. 5 and illustrated according to the process sequence of the present invention. FIG. 8 is a process cross-sectional view cut along the line VIII-VIII of FIG. 5 and illustrated according to the process sequence of the present invention. FIG. 8 is a process cross-sectional view cut along the line VIII-VIII of FIG. 5 and illustrated according to the process sequence of the present invention. FIG. 4 is a process cross-sectional view illustrating a process of manufacturing an organic light emitting unit of the organic electroluminescent device according to the present invention in the order of processes. FIG. 4 is a process cross-sectional view illustrating a process of manufacturing an organic light emitting unit of the organic electroluminescent device according to the present invention in the order of processes. FIG. 4 is a process cross-sectional view illustrating a process of manufacturing an organic light emitting unit of the organic electroluminescent device according to the present invention in the order of processes.

Explanation of reference numerals

100: 1st substrate (lower substrate)
122: Drain electrode
126: Common electrode
130: 1st connection electrode
132: 2nd connection electrode
200: 2nd substrate (lower substrate)
202: 1st electrode (anode electrode)
203: Auxiliary insulation pattern
204: Partition wall
206: Light emitting layer
208: 2nd electrode
300: Seal pattern

Claims (34)

  A first substrate and a second substrate which are spaced apart from each other and have a display portion and a peripheral portion including a plurality of pixel regions and a dummy pixel region; and a plurality of pixel regions formed on an inner surface of the first substrate. A plurality of driving thin film transistors adjacent to each of the plurality of driving thin film transistors; a first connection electrode connected to each of the plurality of driving thin film transistors; a first electrode formed on an inner surface of the second substrate; A partition formed on each edge of the pixel region and the dummy pixel region; an organic light emitting layer formed on the first electrode; and a plurality of pixel regions on the organic light emitting layer and the dummy pixel region. In the second electrode formed on each of the plurality of pixel regions, the second electrode formed on each of the plurality of pixel regions includes a second electrode connected to the first connection electrode; Attach An organic electroluminescent device comprising a sealant.   A pad formed on a peripheral portion of an inner surface of the first substrate; and a second connection electrode connected to the pad and having the same layer and the same material as the first connection electrode. 2. The organic electroluminescent device according to 1.   The organic electroluminescent device according to claim 1, wherein the second electrode of the dummy pixel region is electrically floating.   The device of claim 1, wherein each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode.   Each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode, and the pad is formed of the same material as the driving source and the driving drain electrode. The organic electroluminescent device according to claim 1.   The organic electroluminescent device of claim 4, further comprising a plurality of switching thin film transistors connected to the plurality of driving thin film transistors, each including a switching active layer, a switching gate electrode, a switching source and a switching drain electrode.   The organic electroluminescent device according to claim 6, wherein the driving active layer and the switching active layer are made of polycrystalline silicon.   The organic electroluminescence of claim 6, wherein the switching source electrode is connected to the data line, the switching drain electrode is connected to the driving gate electrode, and the switching gate electrode is connected to a gate line. element.   The organic electroluminescent device of claim 1, further comprising a power line connected to the driving thin film transistor.   The organic electroluminescent device of claim 1, further comprising a storage capacitor connected to the driving thin film transistor.   The organic electroluminescent device according to claim 1, wherein the first electrode is an anode for injecting holes into the organic light emitting layer, and the second electrode is a cathode for injecting electrons into the organic light emitting layer. .   12. The organic electroluminescent device according to claim 11, wherein the first electrode is made of one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).   The organic electroluminescent device according to claim 11, wherein the second electrode is formed of one of calcium (Ca), aluminum (Al), and magnesium (Mg).   The organic electroluminescent device according to claim 2, further comprising an auxiliary electrode formed between the first connection electrode and the second connection electrode and made of the same material as the second electrode.   The device of claim 1, wherein the dummy pixel area surrounds the plurality of pixel areas.   The organic electroluminescent device according to claim 1, further comprising an auxiliary insulating layer formed between the first electrode and at least one of the barrier ribs.   Preparing a first substrate having a display portion including a plurality of pixel regions and dummy pixel regions and a peripheral portion; and forming a plurality of driving thin film transistors adjacent to the plurality of pixel regions on the first substrate. Forming a first connection electrode connected to each of the plurality of driving thin film transistors; forming a first electrode on a second substrate; and forming a plurality of pixel regions and the dummy on the first electrode. Forming a partition on each edge of the pixel region; forming an organic light emitting layer on the first electrode; and forming a second layer on each of the plurality of pixel regions and the dummy pixel region on the organic light emitting layer. Forming an electrode so that the second electrode formed in each of the plurality of pixel regions is connected to the first connection electrode; and 2nd group A method for manufacturing an organic electroluminescent device, comprising a step of attaching a plate with a sealant.   Forming a pad around the inner surface of the first substrate; and forming a second connection electrode connected to the pad and connected to the first electrode when the first and second substrates are joined. The method according to claim 17, further comprising:   The method of claim 17, wherein each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode.   19. The driving thin film transistor according to claim 18, wherein each of the plurality of driving thin film transistors includes a driving active layer, a driving gate electrode, a driving source and a driving drain electrode, and the pad is formed simultaneously with the driving source and driving drain electrodes. 3. The method for producing an organic electroluminescent device according to item 1.   20. The organic device according to claim 19, further comprising forming a plurality of switching thin film transistors connected to the plurality of driving thin film transistors and each including a switching active layer, a switching gate electrode, a switching source and a switching drain electrode. A method for manufacturing an electroluminescent device. 22. The method according to claim 21, wherein the driving active layer and the switching active layer are made of polycrystalline silicon.   22. The organic electroluminescence of claim 21, wherein the switching source electrode is connected to the data line, the switching drain electrode is connected to the driving gate electrode, and the switching gate electrode is connected to a gate line. Device manufacturing method.   18. The method of claim 17, further comprising forming a power line connected to the driving thin film transistor.   20. The method of claim 17, further comprising forming a storage capacitor connected to the driving thin film transistor.   The organic electroluminescence according to claim 17, wherein the first electrode is an anode for injecting holes into the organic light emitting layer, and the second electrode is a cathode for injecting electrons into the organic light emitting layer. Device manufacturing method.   27. The method of claim 26, wherein the first electrode comprises one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO). Method.   The method of claim 26, wherein the second electrode is formed of one of calcium (Ca), aluminum (Al), and magnesium (Mg).   3. The method of claim 2, further comprising forming an auxiliary electrode between the first connection electrode and the second connection electrode at the same time as the second electrode.   The method of claim 17, wherein the dummy pixel region surrounds the plurality of pixel regions.   2. The method of claim 1, further comprising forming an auxiliary insulating layer between the first electrode and at least one of the barrier ribs.   Forming a first insulating layer on a first substrate having a display portion and a peripheral portion including a plurality of pixel regions and a dummy pixel region; and forming a polycrystalline layer on each of the plurality of pixel regions on the first insulating layer. Forming an active layer made of silicon and including source and drain regions; forming a second insulating layer on the active layer; forming a gate electrode on the second insulating layer corresponding to the active layer Forming a third insulating layer above the gate electrode; and having a first contact hole exposing the source region and a second contact hole exposing the drain region above the third insulating layer. Forming a fourth insulating layer; a source electrode connected to the source region through the first contact hole on the fourth insulating layer; Forming a drain electrode connected to the drain region through a hole; forming a fifth insulating layer having a third contact hole exposing the drain electrode on the source and drain electrodes; 5) forming a first connection electrode connected to the drain electrode through the third contact hole on the insulating layer; forming a first electrode on the second substrate having the display unit and the peripheral unit; Forming a plurality of pixel regions on the first electrode and barriers at respective edges of the dummy pixel region; forming an organic light emitting layer on the first electrode; and forming the organic light emitting layer on the organic light emitting layer. Forming a second electrode in each of the plurality of pixel regions; adhering the first substrate and the second substrate using a sealant such that the first connection electrode contacts the second electrode; Method of fabricating an organic light emitting device characterized by comprising the step of.   33. The device according to claim 32, wherein the first, third, fourth, and fifth insulating layers are sequentially formed in the dummy pixel region on the inner surface of the first substrate. A method for manufacturing an organic electroluminescent device. Forming a pad so that the fifth insulating layer has a fourth contact hole and a fifth contact hole exposing the pad, wherein the pad is formed in a peripheral portion above the fourth insulating layer; Forming a second connection electrode on the insulating layer, the second connection electrode being connected to the pad through the fourth contact hole and being connected to the first electrode when the first and second substrates are joined. The method for manufacturing an organic electroluminescent device according to claim 32, wherein:

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