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JP2004221169A - Semiconductor element protecting material and semiconductor device - Google Patents

Semiconductor element protecting material and semiconductor device Download PDF

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Publication number
JP2004221169A
JP2004221169A JP2003004274A JP2003004274A JP2004221169A JP 2004221169 A JP2004221169 A JP 2004221169A JP 2003004274 A JP2003004274 A JP 2003004274A JP 2003004274 A JP2003004274 A JP 2003004274A JP 2004221169 A JP2004221169 A JP 2004221169A
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Japan
Prior art keywords
semiconductor element
protective material
material according
element protective
weight
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JP2003004274A
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Japanese (ja)
Inventor
Michio Masuno
道夫 増野
Michio Uruno
道生 宇留野
Hiroshi Kirihara
博 桐原
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Resonac Corp
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Hitachi Chemical Co Ltd
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Priority to JP2003004274A priority Critical patent/JP2004221169A/en
Publication of JP2004221169A publication Critical patent/JP2004221169A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element protecting material that has a high light shielding characteristics, and to provide a semiconductor device which is protected from unnecessary leakage light by using the protecting material. <P>SOLUTION: The light-shielding semiconductor element protecting material comprises at least an adhesive layer where a light shielding rate in at least 1-10μm wavelength region is 99-100%. The semiconductor device has a structure in which the protecting material is pasted on the backside of the semiconductor element. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、遮光性を必要とする半導体素子を有する半導体装置に適用され、半導体素子を保護するための半導体素子保護材、及び本半導体素子保護材を使用した半導体装置に関する。
【０００２】
【従来の技術】
近年、電子機器の小型化に伴い、これに搭載する半導体装置は基板への高密度実装が要求されるようになり、小型化・軽量化が進むと共に、ＣＳＰ（チップサイズ半導体装置）と呼ばれる小型半導体装置の開発が進められている。
【０００３】
これらの半導体装置は、従来のＬＯＣ（リードオンチップ）、ＱＦＰ（クアッドフラットパッケージ）等の半導体装置よりも小型化するため、半導体素子と基板の配線を半導体素子の中央部に配置してその部分のみ封止を行い、半導体素子がむき出しの状態であるような半導体装置形状が考案されている。
【０００４】
このような半導体装置では、半導体素子裏面がむき出しの状態となっているため、半導体素子裏面にクラックが発生することがあり、そのクラックが半導体素子の能動面に達して半導体素子が不良となることがある。よって半導体素子裏面に保護膜を形成し、半導体素子裏面にクラックが生じることによる半導体素子不良の発生を抑制する方法が提供されている（例えば、特許文献１参照）。
【０００５】
また一方で、半導体素子についてはその微細化構造に伴い、僅かな電磁波が半導体素子回路に影響し、誤作動を生じることが分かっており、中でも赤外光は半導体素子を形成しているシリコンを透過してしまうため、容易に半導体素子回路面に到達し、回路誤作動の主原因となる。（例えば、特許文献１参照）
【０００６】
【特許文献１】
特開２００１−０６８６０３号公報
【０００７】
【発明が解決しようとする課題】
このように封止材がない半導体装置では、半導体素子裏面に保護フィルムを貼り付ける等の方法で半導体素子を保護する方法があるが、いずれも半導体素子のダイシング時のチッピング防止や実装後の半導体素子補強には効果があるものの、これらのフィルムは赤外光の遮光性に乏しく、赤外光の半導体素子回路面への影響は防げないのが現状である。
【０００８】
請求項１記載の発明は、遮光性を有した半導体素子保護材を提供するものである。
請求項２または３記載の発明は、請求項１の発明の効果を奏し、さらに品質安定性に優れた半導体素子保護材を提供するものである。
請求項４記載の発明は、半導体素子保護材について、使用方法の多様性を提供するものである。
請求項５記載の発明は、請求項１〜４の発明の効果を達成し、遮光性に優れた半導体素子保護材を提供するものである。
請求項６〜８記載の発明は、請求項１〜５の発明の効果に奏し、さらに遮光性に優れた半導体素子保護材を提供するものである。
請求項９〜１１記載の発明は、請求項１〜８の発明の効果を奏し、さらに遮光性に優れた半導体素子保護材を提供するものである。
請求項１２〜１８記載の発明は、請求項１〜１１の発明の効果を奏し、さらに信頼性に優れた半導体素子保護材を提供するものである。
請求項１９または２０記載の発明は、請求項１〜１８の発明の効果に奏し、さらに信頼性に優れた半導体素子保護材を提供するものである。
請求項２１記載の発明は、高密度実装と情報処理の高速化に優れた半導体装置を提供するものである。
本発明は、高い遮光性を有した半導体素子保護材、及びこれを利用した半導体装置の提供を目的とする。
【０００９】
【課題を解決するための手段】
本発明は次のものに関する。
（１） 厚みが１０〜１００μｍのフィルム状半導体素子保護材であって、少なくとも１〜１０μｍの波長領域における遮光率が９９〜１００％である接着剤層を少なくとも有してなる半導体素子保護材。
（２） 前記接着剤層が、基材を有してなる上記（１）記載の半導体素子保護材。
（３） 前記接着剤層が、さらにカバーフィルムを有してなる上記（１）または（２）記載の半導体素子保護材。
（４） ペースト状の半導体素子保護材であって、該半導体素子保護材は厚み１００μｍとなるように成膜した時、少なくとも１〜１０μｍの波長領域における遮光率が９９〜１００％である半導体素子保護材。
（５） 電磁波吸収剤を含有してなる上記（１）〜（４）記載の半導体素子保護材。
（６） 前記電磁波吸収剤が、黒色顔料を含有してなる上記（５）記載の半導体素子保護材。
（７） 前記黒色顔料の主成分が、カーボンブラックである上記（６）記載の半導体素子保護材。
（８） 前記カーボンブラックが、Ｃ．Ｉ．Ｐｉｇｍｅｎｔ Ｂｌａｃｋ ７である上記（７）記載の半導体素子保護材。
（９） 前記電磁波吸収剤が、さらに無機フィラーを含有してなる上記（６）〜（８）記載の半導体素子保護材。
（１０） 前記無機フィラーの主成分が、白色シリカである上記（９）記載の半導体素子保護材。
（１１） 前記白色フィラーの平均粒径が０．０１〜２０μｍである上記（１０）記載の半導体素子保護材。
（１２） 前記接着剤層が、熱硬化性樹脂である上記（１）〜（４）記載の半導体素子保護材。
（１３） 前記熱硬化性樹脂が、エポキシ樹脂である上記（１２）記載の半導体素子保護材。
（１４） 前記熱硬化性樹脂が、エポキシ基含有アクリル系共重合体を含有してなる上記（１２）に記載の半導体素子保護材。
（１５） 前記接着剤層が、熱可塑性樹脂を含有してなる上記（１）〜（１４）のいずれかに記載の半導体素子保護材。
（１６） 前記熱可塑性樹脂のＴｇ（ガラス転移温度）が２００℃以下である上記（１５）記載の半導体素子保護材。
（１７） 前記熱可塑性樹脂が、ポリイミド樹脂を含む上記（１５）または（１６）記載の半導体素子保護材。
（１８） 以下の組成を特徴とする上記（１）〜（１４）記載の半導体素子保護材。
（１）エポキシ樹脂及びその硬化剤１０〜３０重量％、（２）グリシジル（メタ）アクリレート２〜６重量％を含むＴｇが−１０℃以上でかつ重量平均分子量が６０万以上であるエポキシ基含有アクリル系共重合体３０〜７０重量％、（３）黒色顔料１〜２０重量％、（４）無機フィラー１〜５０重量％。
（１９） 前記接着剤層が、半導体素子裏面に対し圧着温度１６０℃、圧着圧力０．１ＭＰａ、圧着時間２ｓの条件下で熱圧着し、その熱硬化後の２６５℃における半導体素子裏面との接着強度が０．５ＭＰａ以上である上記（１）〜（４）記載の半導体素子保護材。
（２０） 前記接着剤層が、半導体素子裏面に対し熱圧着・熱硬化後、さらに温度１２１℃、圧力０．２ＭＰａ、飽和水蒸気状態の条件下に１６８時間保管された後の、２６５℃における半導体素子裏面との接着強度が０．１ＭＰａ以上である上記（１９）記載の半導体素子保護材。
（２１） 上記（１）〜（２０）のいずれかに記載の半導体素子保護材を半導体素子裏面に貼り付けした構造を有してなる半導体装置。
【００１０】
【発明の実施の形態】
図１は本発明の半導体素子保護材１と基材２の組み合わせで形成される半導体素子保護材の断面図である。カバーフィルム３は半導体素子保護材１の種類により付属させても構わない。
図２は本発明の半導体素子保護材１を半導体素子４の裏面に形成した断面図である。半導体素子保護材１は、図１の半導体素子保護材を半導体素子の裏面にヒートプレス、ラミネーター等で熱圧着して形成することができる。また、半導体素子保護材１の原材料を溶剤に溶解したワニスをスピンコーター、バーコーター等で半導体素子裏面に成膜し、直接半導体素子保護材１を形成しても良い。
図３に本発明の一実施例を示す半導体装置の断面図を示す。図３は本発明の半導体素子保護材１を裏面に備えた半導体素子４を半導体搭載用配線基板に接着剤５で接着させ、半導体素子のボンディングパッドに配線７の一部を半導体素子接続部材８として接続し封止材９によりワイヤボンディング部分の周囲を封止し外部接続端子１０を設けた半導体装置の断面図である。
【００１１】
本発明の半導体素子保護材の厚みは、１０〜１００μｍが好ましいが、厚すぎると半導体装置全体の厚みが増えて半導体装置設計の障害になる点と、薄すぎると遮光性が低下し、それを補うために過剰の電磁波吸収剤を添加することにより、イオン性不純物の増加、フィルム延性の低下半導体素子裏面との接着強度の低下等の問題が発生する点から、２５〜８０μｍであることがより好ましく、４０〜６０μｍであることが特に好ましい。
【００１２】
また、本発明の半導体素子保護材は、ＦＴＩＲ測定装置（日本電子データム（株）製 ＪＩＲ−３５１０ ＦＴＩＲ ＳＰＥＣＴＲＯＭＥＴＥＲ使用）の透過光強度測定において１〜１０μｍの波長領域における遮光率が９９〜１００％であることが必要であり、このために電磁波吸収剤を添加することが好ましい。
【００１３】
本発明の電磁波吸収剤としては、近赤外光領域に吸収を持つ黒色顔料が好ましく、例えば、カーボンブラック、黒鉛、チタンカーボン、二酸化マンガン、フタロシアニン系の黒色顔料等や、白色シリカ、酸化アルミニウム、炭酸カルシウム、炭酸マグネシウム、窒化アルミニウム、窒化ホウ素等の無機フィラー、及び染料を用いることができる。中でもカーボンブラックと白色シリカが好ましい。
カーボンブラックは、赤外光領域の電磁波吸収剤として使用され、山陽色素株式会社からＪ−３０８、御国色素株式会社からＣＦブラックＨＧＢＫ−０２等の商品名で、分散処理を施し、分散剤や溶媒等をふくんだペースト状態で市販されている。中でも、カーボンブラックとしてＣ．Ｉ．Ｐｉｇｍｅｎｔ Ｂｌａｃｋ ７を用いているＪ−３０８が好ましい。
カーボンブラックの配合量としては遮光性との関係から、１〜２０重量％であることが好ましく、２．５〜１５重量％がさらに好ましく、５〜１０重量％が特に好ましい。
【００１４】
白色シリカは、８〜１０μｍの波長付近の電磁波吸収剤として使用され、日本アエロジル株式会社から Ｒ９７２、Ｒ９７２Ｖ、Ｒ９７２ＣＦ、株式会社アドマテックスからＳＯ−Ｅ１、ＳＯ−Ｅ２、ＳＯ−Ｅ５、ＳＯ−Ｃ１、ＳＯ−Ｃ２、ＳＯ−Ｃ３、ＳＯ−Ｃ５、株式会社龍森からＰＬＶ−６、ＰＬＶ−４、ＴＦＣ−１２、ＴＦＣ−２４、ＵＳＶ−５、ＵＳＶ−１０の製品名で市販されている。その平均粒径は０．０１〜２０μｍが好ましいが、粒径は細かすぎると溶液の増粘効果が大きく作業性の低下を生じる恐れがあり、また大きすぎると沈殿による分散不良の原因となることから、０．１〜１０μｍがより好ましく、０．２〜１μｍが特に好ましい。中でも、Ｓ０−Ｃ２が好ましい。
白色シリカの配合量は、少なすぎると遮光性が低下することが考えられ、多すぎると半導体素子裏面との接着性の低下を生じるため、１〜５０重量％であることが好ましく、２．５〜４０重量％がさらに好ましく、５〜３０重量％が特に好ましい。
【００１５】
本発明で使用する半導体素子保護材の接着剤層としては、絶縁性のエポキシ樹脂系からなる接着剤を用いることが望ましい。
エポキシ樹脂及びその硬化剤からなる成分におけるエポキシ樹脂は、硬化して接着作用を呈するものであれば良く、好ましくは２官能以上で、好ましくは分子量が５０００未満、より好ましくは分子量４０００未満、特に好ましくは分子量３０００未満のエポキシ樹脂を用いるのが好ましい。２官能エポキシ樹脂としてはビスフェノ−ルＡ型又はビスフェノ−ルＦ型樹脂等が例示される。ビスフェノ−ルＡ型又はビスフェノ−ルＦ型液状樹脂は、東都化成株式会社から、ＹＤ８１２５、ＹＤＦ１７０という商品名で市販されている。中でも、ＹＤ８１２５が好ましい。
エポキシ樹脂としては、高Ｔｇ化を目的に多官能エポキシ樹脂を加えてもよく、多官能エポキシ樹脂としては、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂等が例示される。フェノールノボラック型エポキシ樹脂は、日本化薬株式会社から、ＥＰＰＮ−２０１という商品名で市販されている。また、クレゾールノボラック型エポキシ樹脂は、住友化学工業株式会社から、ＥＳＣＮ−００１、ＥＳＣＮ−１９５という商品名で、また、前記日本化薬株式会社から、ＥＯＣＮ１０１２、ＥＯＣＮ１０２５、ＥＯＣＮ１０２７という商品名で市販されている。さらに、東都化成株式会社からＹＣＤＣＮ−７０３という商品名で市販されている。中でも、ＹＤＣＮ７０３が好ましい。
【００１６】
エポキシ樹脂の硬化剤は、エポキシ樹脂の硬化剤として通常用いられているものを使用でき、アミン、ポリアミド、酸無水物、ポリスルフィッド、三弗化硼素及びフェノール性水酸基を１分子中に２個以上有する化合物であるビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳ、ノボラック樹脂等が挙げられる。特に吸湿時の耐電食性に優れるためフェノールノボラック樹脂、ビスフェノールノボラック樹脂又はクレゾールノボラック樹脂を用いるのが好ましい。また、低吸水性の良好なフェノールキシレングリコールジメチルエーテルの縮合物の使用も好ましい。
【００１７】
このような特に好ましいとした硬化剤は、大日本インキ化学工業株式会社から、フェノライトＬＦ２８８２、フェノライトＬＦ２８２２、フェノライトＴＤ−２０９０、フェノライトＴＤ−２１４９、フェノライトＶＨ４１５０、フェノライトＶＨ４１７０として、三井化学株式会社よりミレックス ＸＬＣ−ＬＬ、ＸＬＣ−４Ｌという商品名で市販されている。中でもフェノライトＬＦ２８８２とＸＬＣ−ＬＬが好ましい。エポキシ樹脂と硬化剤の合計は接着性の発現から５〜５０重量％であることが好ましく、１０〜４０重量％がさらに好ましく、１５〜３０重量％が特に好ましい。
【００１８】
グリシジル（メタ）アクリレート２〜６重量％を含むＴｇが−１０℃以上でかつ重量平均分子量が１００，０００以上であるエポキシ基含有アクリル系共重合体は、ナガセケムテック株式会社から市販されている商品名ＨＴＲ−８６０Ｐ−３ＣＳＰを使用することができる。
また、官能基モノマーとして用いるグリシジル（メタ）アクリレートの量は、２〜６重量％の共重合体比とする。接着力を得るため、２重量％以上とし、ゴムのゲル化を防止するために６重量％以下とされる。
残部はエチル（メタ）アクリレートやブチル（メタ）アクリレート又は両者の混合物を用いることが好ましいが、混合比率は、共重合体のＴｇを考慮して決定する。Ｔｇが−１０℃未満であるとＢステージ状態での接着フィルムのタック性が大きくなり取扱性が悪化するので、−１０℃以上とされる。重合方法はパール重合、溶液重合等が挙げられ、これらにより得ることができる。
エポキシ基含有アクリル系共重合体の重量平均分子量は、１００，０００以上とされるが、シート状、フィルム状での強度や可撓性の低下やタック性の増大の点から、２００，０００以上が好ましく、５００，０００以上がさらに好ましく、７００，０００以上が特に好ましい。
前記エポキシ基含有アクリル系共重合体添加量は高接着性の点から、１０〜８０重量％であることが好ましく、２０〜６０重量％がさらに好ましく、４０〜５０重量％が特に好ましい。
【００１９】
硬化剤とともに硬化促進剤を用いるのが好ましく、硬化促進剤としては、各種イミダゾール類を用いるのが好ましい。イミダゾールとしては、２−メチルイミダゾール、２−エチル−４−メチルイミダゾール、１−シアノエチル−２−フェニルイミダゾール、１−シアノエチル−２−フェニルイミダゾリウムトリメリテート等が挙げられる。
イミダゾール類は、四国化成工業株式会社から、２Ｅ４ＭＺ、２ＰＺ−ＣＮ、２ＰＺ−ＣＮＳという商品名で市販されているが、中でも２ＰＺ−ＣＮが好ましい。硬化促進剤は接着剤の硬化を必要以上に進ませず、長期安定性を確保する観点から、０．０１〜１０重量％であることが好ましく、０．０５〜５重量％がさらに好ましく、０．０８〜１重量％が特に好ましい。
【００２０】
また、被着体との接着力を向上させるためにカップリング剤を用いるのが好ましく、カップリング剤としては、シランカップリング剤が好ましい。シランカップリング剤としては、γ−グリシドキシプロピルトリメトキシシラン、γ−メルカプトプロピルトリメトキシシラン、γ−アミノプロピルトリエトキシシラン、γ−ウレイドプロピルトリエトキシシラン、Ｎ−β−アミノエチル−γ−アミノプロピルトリメトキシシラン等が挙げられる。前記したシランカップリング剤は、γ−グリシドキシプロピルトリメトキシシランがＮＣＵ Ａ−１８７、γ−メルカプトプロピルトリメトキシシランがＮＣＵ Ａ−１８９、γ−アミノプロピルトリエトキシシランがＮＣＵ Ａ−１１００、γ−ウレイドプロピルトリエトキシシランがＮＣＵ Ａ−１１６０、Ｎ−β−アミノエチル−γ−アミノプロピルトリメトキシシランがＮＣＵ Ａ−１１２０という商品名で、いずれも日本ユニカー株式会社から市販されており、好適に使用することができる。中でも、Ａ−１１６０とＡ−１８９が好ましい。カップリング剤の配合量は、添加による効果や耐熱性及びコストから、０．０１〜１０重量％であることが好ましく、０．１〜５重量％がさらに好ましく、０．５〜２重量％が特に好ましい。
【００２１】
フェノキシ樹脂はエポキシ樹脂と相溶成分として使用され、東都化成株式会社から、フェノト−トＹＰ−４０、フェノト−トＹＰ−５０、フェノト−トＹＰ−６０等の商品名で市販されている。中でも、フェノトートＹＰ−５０が好ましい。
フェノキシ樹脂の配合量としては、接着特性、タック性との関係より添加する必要がある場合は、１〜３０重量％であることが好ましく、５〜２５重量％がさらに好ましく、１０〜２０重量％が特に好ましい。
【００２２】
本発明の半導体素子保護材に使用する樹脂としては、半導体素子がリフロー温度に曝された時や、耐吸湿性試験や耐温度サイクル試験時に、剥離が生じない程度に半導体素子との接着力を有していれば特に成分に制限はなく、例えば、ポリイミド樹脂、ポリアミド樹脂、ポリエーテルスルホン樹脂、ポリアミドイミド樹脂等の熱可塑性樹脂、エポキシ樹脂、ビスマレイミド樹脂、シアネート樹脂、フェノール樹脂、ポリウレタン樹脂等の熱硬化性樹脂、またそれらを含有する接着剤及びその混合物を使用することができる。また、スピンコートやバーコーターにより成膜する場合は、上記樹脂中で接着性を有していない樹脂でも、半導体素子がリフロー温度に曝された時や、耐吸湿性試験や耐温度サイクル試験時に、剥離することがない程度に半導体素子との接着力を有していれば使用することができる。
【００２３】
本発明の半導体素子保護材は、半導体素子裏面上に半導体素子保護材のワニスをスピンコーター、バーコーターなどによって塗布し、加熱乾燥し、溶剤等を除去する事により半導体素子裏面上に得ることができる。この時、スピンコート条件、加熱乾燥条件は使用するフィルムの成分、ワニスの溶媒等によって異なるが、一般に７０〜２００℃、３〜３０分である。
【００２４】
本発明の半導体素子保護材は、半導体素子に直接成膜するのではなく、接着フィルムとしてフィルムを作製し、その後ラミネート、ヒートプレス等により半導体素子に貼り付けてもよい。
その場合の半導体素子保護材は、例えば耐熱性フィルムを基材として、その上に半導体素子保護材のワニスを塗布し、加熱乾燥し、溶剤を除去して得ることができる。このとき、加熱乾燥条件としては使用するフィルムの成分、ワニスの溶媒等によって異なるが、一般に、７０〜２００℃、３〜３０分である。これらの半導体素子保護材の半導体素子への熱ラミネート条件としては、半導体素子に負荷を与えず、且つ作業性に優れる点で、温度は１２０℃以下であることが好ましく、１００℃以下がより好ましく、８０℃以下が特に好ましい、また圧力は、５ｋｇｆ／ｃｍ以下であることが好ましく、２．５ｋｇｆ／ｃｍ以下がより好ましく、１．５ｋｇｆ／ｃｍ以下が特に好ましい。
また、最終的に基材は剥がして半導体装置として使用するため、基材の表面に例えばシリコーン等で離型処理をすることが好ましい。
【００２５】
本発明の半導体素子保護材は、その接着剤層が半導体素子裏面に成膜され、１７０℃、１時間の熱硬化処理を施した後、プレッシャークッカーテストにおいて半導体素子裏面と剥離が生じないことを特徴としており、そのためには、熱硬化処理後の２６５℃での半導体素子裏面との接着強度が、引っ掻き試験（日立化成テクノプラント（株）製 接着力試験機使用）において０．１ＭＰａ以上であることが好ましく、０．５ＭＰａ以上がさらに好ましく、１．０ＭＰａ以上が特に好ましい。
【００２６】
【実施例】
以下、実施例により本発明をさらに具体的に説明するが、本発明はこれに限定されるものではない。
【００２７】
（実施例１）
半導体素子保護材としては、エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂（エポキシ当量２２０、東都化成株式会社製ＹＤＣＮ−７０３を使用）１５ｇ、硬化剤として低吸水性フェノール樹脂（三井化学株式会社製ＸＬＣ−ＬＬ使用）１３ｇ、エポキシ基含有アクリル系共重合体（ナガセケムテック株式会社製ＨＴＲ−８６０Ｐ−３を使用）７７ｇ、硬化促進剤として１−シアノエチル−２−フェニルイミダゾール（四国化成株式会社製 キュアゾ−ル２ＰＺ−ＣＮを使用）０．１ｇ、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（日本ユニカー株式会社製のＮＵＣ Ａ−１８９を使用）０．５ｇ、γ−ウレイドプロピルトリエトキシシラン（日本ユニカー株式会社製のＮＣＵ Ａ−１１６０を使用）０．９ｇ、黒色顔料としてカーボンブラック（山陽色素株式会社製 Ｊ−３０８）３０ｇ、無機物フィラーとして白色シリカ（株式会社アドマテックス製 ＳＯ−Ｃ２を使用）１２ｇからなる組成物を用い、これらを有機溶剤シクロヘキサノンに溶解、混合し、揮発分約１５％の混合溶液を作製した。この混合溶液を基材上に塗工し、接着剤層が５０μｍ厚みになるように第一乾燥炉９０℃／５分、第二乾燥炉１４０℃／５分の条件で加熱乾燥し、基材付き半導体素子保護材を作製した。
【００２８】
（実施例２）
半導体素子保護材としては、エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂（エポキシ当量２２０、東都化成株式会社製ＹＤＣＮ−７０３を使用）１１ｇ、硬化剤として低吸水性フェノール樹脂（三井化学株式会社製ＸＬＣ−ＬＬ使用）９ｇ、エポキシ基含有アクリル系共重合体（ナガセケムテック株式会社製ＨＴＲ−８６０Ｐ−３を使用）５６ｇ、硬化促進剤として１−シアノエチル−２−フェニルイミダゾール（四国化成株式会社製 キュアゾ−ル２ＰＺ−ＣＮを使用）０．１ｇ、カップリング剤としてγ−グリシドキシプロピルトリメトキシシラン（日本ユニカー株式会社製のＮＵＣ Ａ−１８９を使用）０．３ｇ、γ−ウレイドプロピルトリエトキシシラン（日本ユニカー株式会社製のＮＣＵ Ａ−１１６０を使用）０．７ｇ、黒色顔料としてカーボンブラック（山陽色素株式会社製 Ｊ−３０８）２５ｇ、無機物フィラーとして白色シリカ（株式会社アドマテックス製 ＳＯ−Ｃ２を使用）２０ｇからなる組成物を用い、これらを有機溶剤シクロヘキサノンに溶解、混合し、揮発分約１５％の混合溶液を作製した。この混合溶液を基材上に塗工し、接着剤層が５０μｍ厚みになるように第一乾燥炉９０℃／５分、第二乾燥炉１４０℃／５分の条件で加熱乾燥し、基材付き半導体素子保護材を作製した。
【００２９】
（比較例１）
実施例１の組成におけるカーボンブラックの配合量が０、２、８０ｇの接着剤層を、（実施例１）と同様の方法で作製した。
【００３０】
（比較例２）
実施例２の組成における白色シリカの配合量が０、１、４０ｇの接着剤層を、（実施例２）と同様の方法で作製した。
【００３１】
得られた半導体素子保護材の接着剤層を、▲１▼１７０℃、１時間の熱硬化処理を施した後、ＦＴＩＲ測定装置にて赤外光遮光性を測定、▲２▼半導体素子裏面と同素材であるシリコンのチップで接着剤層を挟み、８０℃、１．５ｋｇｆ／ｃｍの条件で熱圧着し、１７０℃、１時間の熱硬化処理を施した後、２６５℃における半導体素子裏面との引っ掻き試験による接着力測定、及び▲３▼半導体素子裏面と同素材であるシリコンのチップと接着剤層とを、８０℃、１．５ｋｇｆ／ｃｍの条件で熱圧着し、１７０℃、１時間の熱硬化処理を施した後、プレッシャークッカーテスト後を行い、半導体素子裏面と接着剤層との剥離状況を確認した。結果を表１に示す。
赤外光遮光性は１〜１０μｍの波長領域における遮光率が９９〜１００％であったものを○、９９％未満であったものを×とした。また、プレッシャークッカーテストは、剥離が無いものを○、剥離が生じているものを×とした。
【００３２】
【表１】

Figure 2004221169
【００３３】
表１より、サンプル３、４、７、８は赤外光遮光性を満たすことが分かった。しかしながら、半導体素子裏面との十分な接着性、及びプレッシャークッカーテストの結果から、サンプル３、７が最も優位性を示すことが分かった。
【００３４】
【発明の効果】
本発明の半導体素子保護材は、僅かな赤外領域の電磁波を完全に遮光し、また半導体材料として十分な信頼性を得るだけの半導体素子との接着性を有することを特徴とする。
よって、赤外領域の僅かな漏洩光が誤作動の原因となるような半導体装置に対して、非常に有用な半導体素子保護材を提供できる。
【図面の簡単な説明】
【図１】は本発明による着色フィルムの断面図である。
【図２】は本発明の着色フィルムを半導体素子表面に形成した断面図である。
【図３】は本発明による半導体用フィルムを用いた半導体装置の断面図である。
【符号の説明】
１．接着剤層
２．基材
３．カバーフィルム
４．半導体素子
５．接着剤
６．半導体配線基板
７．配線
８．半導体素子接続部材
９．封止材
１０．半田ボール[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention is applied to a semiconductor device having a semiconductor element requiring light-shielding properties, and relates to a semiconductor element protection material for protecting a semiconductor element and a semiconductor device using the semiconductor element protection material.
[0002]
[Prior art]
In recent years, with the miniaturization of electronic devices, high-density mounting on a substrate has been required for semiconductor devices mounted thereon, and the miniaturization and weight reduction have progressed, and a small-sized device called a CSP (chip size semiconductor device) has been developed. Semiconductor devices are being developed.
[0003]
In order to make these semiconductor devices smaller than conventional semiconductor devices such as LOC (lead-on-chip) and QFP (quad flat package), the wiring between the semiconductor element and the substrate is arranged at the center of the semiconductor element, and the portion is formed. A semiconductor device shape has been devised in which only sealing is performed and the semiconductor element is exposed.
[0004]
In such a semiconductor device, since the back surface of the semiconductor element is exposed, cracks may be generated on the back surface of the semiconductor element, and the cracks may reach the active surface of the semiconductor element and cause the semiconductor element to be defective. There is. Accordingly, a method has been provided in which a protective film is formed on the back surface of a semiconductor element to suppress the occurrence of semiconductor element failure due to cracks on the back surface of the semiconductor element (for example, see Patent Document 1).
[0005]
On the other hand, as for semiconductor elements, it has been found that slight electromagnetic waves affect the semiconductor element circuits due to the miniaturized structure and cause malfunctions.In particular, infrared light impinges silicon forming the semiconductor elements. Since the light is transmitted, it easily reaches the circuit surface of the semiconductor element, and is a major cause of circuit malfunction. (For example, see Patent Document 1)
[0006]
[Patent Document 1]
JP-A-2001-068603
[Problems to be solved by the invention]
In a semiconductor device without such a sealing material, there is a method of protecting the semiconductor element by a method such as attaching a protective film to the back surface of the semiconductor element. Although effective for element reinforcement, these films have poor light-shielding properties for infrared light, and at present it is impossible to prevent infrared light from affecting the semiconductor element circuit surface.
[0008]
The first aspect of the present invention provides a semiconductor element protective material having a light shielding property.
The invention according to claim 2 or 3 provides the effect of the invention according to claim 1 and provides a semiconductor element protective material excellent in quality stability.
The invention according to claim 4 provides a variety of usages of the semiconductor element protective material.
The invention described in claim 5 achieves the effects of the inventions of claims 1 to 4 and provides a semiconductor element protective material having excellent light shielding properties.
The inventions according to claims 6 to 8 have the effects of the inventions according to claims 1 to 5, and provide a semiconductor element protective material having excellent light shielding properties.
The inventions of claims 9 to 11 provide the effects of the inventions of claims 1 to 8 and provide a semiconductor element protection material having excellent light shielding properties.
The inventions of claims 12 to 18 have the effects of the inventions of claims 1 to 11 and provide a semiconductor element protective material having excellent reliability.
The invention according to claim 19 or 20 has the effects of the inventions according to claims 1 to 18, and provides a semiconductor element protective material having excellent reliability.
The invention according to claim 21 provides a semiconductor device excellent in high-density mounting and high-speed information processing.
An object of the present invention is to provide a semiconductor element protective material having a high light-shielding property and a semiconductor device using the same.
[0009]
[Means for Solving the Problems]
The present invention relates to the following.
(1) A film-like semiconductor element protection material having a thickness of 10 to 100 μm, which has at least an adhesive layer having a light shielding ratio of 99 to 100% in a wavelength region of at least 1 to 10 μm.
(2) The semiconductor element protective material according to (1), wherein the adhesive layer has a base material.
(3) The semiconductor element protective material according to the above (1) or (2), wherein the adhesive layer further has a cover film.
(4) A paste-like semiconductor element protection material, wherein the semiconductor element protection material has a light shielding ratio of 99 to 100% in a wavelength region of at least 1 to 10 μm when formed into a film having a thickness of 100 μm. Protective layer.
(5) The semiconductor element protective material according to any one of (1) to (4), further comprising an electromagnetic wave absorber.
(6) The semiconductor element protective material according to the above (5), wherein the electromagnetic wave absorber contains a black pigment.
(7) The semiconductor element protective material according to (6), wherein the main component of the black pigment is carbon black.
(8) The carbon black is C.I. I. Pigment Black 7, the semiconductor element protective material according to the above (7).
(9) The semiconductor element protective material according to the above (6) to (8), wherein the electromagnetic wave absorber further contains an inorganic filler.
(10) The semiconductor element protective material according to (9), wherein the main component of the inorganic filler is white silica.
(11) The semiconductor element protective material according to (10), wherein the white filler has an average particle size of 0.01 to 20 μm.
(12) The semiconductor element protective material according to any one of (1) to (4), wherein the adhesive layer is a thermosetting resin.
(13) The semiconductor element protective material according to the above (12), wherein the thermosetting resin is an epoxy resin.
(14) The semiconductor element protective material according to the above (12), wherein the thermosetting resin contains an acrylic copolymer containing an epoxy group.
(15) The semiconductor element protective material according to any one of the above (1) to (14), wherein the adhesive layer contains a thermoplastic resin.
(16) The semiconductor element protective material according to the above (15), wherein the thermoplastic resin has a Tg (glass transition temperature) of 200 ° C. or less.
(17) The semiconductor element protective material according to the above (15) or (16), wherein the thermoplastic resin contains a polyimide resin.
(18) The semiconductor element protective material according to the above (1) to (14), which has the following composition.
(1) Epoxy resin and its curing agent 10 to 30% by weight, (2) Epoxy group containing 2 to 6% by weight of glycidyl (meth) acrylate having a Tg of -10 ° C or more and a weight average molecular weight of 600,000 or more. 30 to 70% by weight of an acrylic copolymer, (3) 1 to 20% by weight of a black pigment, and (4) 1 to 50% by weight of an inorganic filler.
(19) The adhesive layer is thermocompression-bonded to the back surface of the semiconductor element under the conditions of a compression temperature of 160 ° C., a compression pressure of 0.1 MPa, and a compression time of 2 s. The semiconductor element protective material according to any one of (1) to (4), wherein the strength is 0.5 MPa or more.
(20) The semiconductor at 265 ° C. after the adhesive layer is thermocompressed and thermoset to the back surface of the semiconductor element, and further stored for 168 hours under the conditions of a temperature of 121 ° C., a pressure of 0.2 MPa and a saturated steam state. The semiconductor element protective material according to the above (19), wherein the adhesive strength to the element back surface is 0.1 MPa or more.
(21) A semiconductor device having a structure in which the semiconductor element protective material according to any one of (1) to (20) is attached to a back surface of the semiconductor element.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a cross-sectional view of a semiconductor element protection material formed by combining a semiconductor element protection material 1 and a base material 2 according to the present invention. The cover film 3 may be attached depending on the type of the semiconductor element protective material 1.
FIG. 2 is a sectional view in which the semiconductor element protection material 1 of the present invention is formed on the back surface of the semiconductor element 4. The semiconductor element protective material 1 can be formed by thermocompression-bonding the semiconductor element protective material of FIG. 1 to the back surface of the semiconductor element using a heat press, a laminator, or the like. Alternatively, a varnish obtained by dissolving the raw material of the semiconductor element protective material 1 in a solvent may be formed on the back surface of the semiconductor element by using a spin coater, a bar coater, or the like to directly form the semiconductor element protective material 1.
FIG. 3 is a sectional view of a semiconductor device showing one embodiment of the present invention. FIG. 3 shows a semiconductor element 4 provided with a semiconductor element protective material 1 of the present invention on the back surface, which is bonded to a wiring board for mounting a semiconductor with an adhesive 5, and a part of the wiring 7 is connected to a bonding pad of the semiconductor element by a semiconductor element connecting member FIG. 4 is a cross-sectional view of a semiconductor device in which external connection terminals 10 are provided by sealing around a wire bonding portion with a sealing material 9 and providing external connection terminals 10.
[0011]
The thickness of the semiconductor element protective material of the present invention is preferably from 10 to 100 μm. However, if the thickness is too large, the thickness of the entire semiconductor device increases and hinders the design of the semiconductor device. By adding an excessive amount of an electromagnetic wave absorber to compensate, from the point that problems such as an increase in ionic impurities and a decrease in film ductility and a decrease in adhesive strength with the back surface of the semiconductor element occur, the thickness is more preferably 25 to 80 μm. It is particularly preferably 40 to 60 μm.
[0012]
Further, the semiconductor element protective material of the present invention has a light-shielding ratio of 99 to 100% in a wavelength region of 1 to 10 μm in a transmitted light intensity measurement using an FTIR measuring device (JIR-3510 FTIR SPECTROMETER manufactured by JEOL Datum Co., Ltd.). Therefore, it is preferable to add an electromagnetic wave absorber.
[0013]
As the electromagnetic wave absorber of the present invention, black pigments having absorption in the near-infrared light region are preferable, for example, carbon black, graphite, titanium carbon, manganese dioxide, phthalocyanine-based black pigments and the like, white silica, aluminum oxide, Inorganic fillers such as calcium carbonate, magnesium carbonate, aluminum nitride, and boron nitride, and dyes can be used. Among them, carbon black and white silica are preferred.
Carbon black is used as an electromagnetic wave absorber in the infrared light region, and is subjected to a dispersion treatment under a trade name such as J-308 from Sanyo Dye Co., Ltd. and CF Black HGBK-02 from Mikuni Dye Co., Ltd. It is commercially available in the form of a paste containing the same. Among them, C.I. I. J-308 using Pigment Black 7 is preferred.
The amount of carbon black is preferably from 1 to 20% by weight, more preferably from 2.5 to 15% by weight, and particularly preferably from 5 to 10% by weight in view of the light-shielding property.
[0014]
White silica is used as an electromagnetic wave absorber near a wavelength of 8 to 10 μm, and R972, R972V, R972CF from Nippon Aerosil Co., Ltd., SO-E1, SO-E2, SO-E5, SO-C1, from Admatex Co., Ltd. SO-C2, SO-C3, SO-C5, and commercially available from Tatsumori Corporation under the product names PLV-6, PLV-4, TFC-12, TFC-24, USV-5, and USV-10. The average particle size is preferably 0.01 to 20 μm, but if the particle size is too small, the thickening effect of the solution may be large and the workability may be reduced. If the particle size is too large, it may cause poor dispersion due to precipitation. Therefore, the thickness is more preferably 0.1 to 10 μm, and particularly preferably 0.2 to 1 μm. Among them, S0-C2 is preferable.
If the amount of the white silica is too small, it is considered that the light-shielding property is reduced. If the amount is too large, the adhesiveness to the back surface of the semiconductor element is reduced. Therefore, the amount is preferably 1 to 50% by weight. -40% by weight is more preferable, and 5-30% by weight is particularly preferable.
[0015]
As the adhesive layer of the semiconductor element protective material used in the present invention, it is desirable to use an adhesive made of an insulating epoxy resin.
The epoxy resin in the component comprising the epoxy resin and its curing agent may be any as long as it cures and exhibits an adhesive action, and is preferably bifunctional or more, preferably has a molecular weight of less than 5000, more preferably has a molecular weight of less than 4000, and is particularly preferably. It is preferable to use an epoxy resin having a molecular weight of less than 3000. Examples of the bifunctional epoxy resin include bisphenol A type and bisphenol F type resins. The bisphenol A type or bisphenol F type liquid resin is commercially available from Toto Kasei Co., Ltd. under the trade names YD8125 and YDF170. Among them, YD8125 is preferable.
As the epoxy resin, a polyfunctional epoxy resin may be added for the purpose of increasing the Tg. Examples of the polyfunctional epoxy resin include a phenol novolak type epoxy resin and a cresol novolak type epoxy resin. Phenol novolak type epoxy resin is commercially available from Nippon Kayaku Co., Ltd. under the trade name EPPN-201. Cresol novolak type epoxy resins are commercially available from Sumitomo Chemical Co., Ltd. under the trade names ESCN-001 and ESCN-195, and from Nippon Kayaku Co., Ltd. under the trade names EOCN1012, EOCN1025 and EOCN1027. I have. Further, it is commercially available from Toto Kasei Co., Ltd. under the trade name of YCDCN-703. Among them, YDCN703 is preferable.
[0016]
As the curing agent for the epoxy resin, those usually used as curing agents for the epoxy resin can be used, and have at least two amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, and phenolic hydroxyl groups in one molecule. Examples of the compound include bisphenol A, bisphenol F, bisphenol S, and novolak resin. Particularly, it is preferable to use a phenol novolak resin, a bisphenol novolak resin or a cresol novolak resin because of its excellent electric corrosion resistance when absorbing moisture. It is also preferable to use a condensate of phenol xylene glycol dimethyl ether having good water absorbency.
[0017]
Such particularly preferred curing agents are available from Dainippon Ink and Chemicals, Inc. as phenolite LF2882, phenolite LF2822, phenolite TD-2090, phenolite TD-2149, phenolite VH4150, and phenolite VH4170 as Mitsui. It is commercially available from Chemical Co., Ltd. under the trade name MILEX XLC-LL and XLC-4L. Among them, phenolite LF2882 and XLC-LL are preferable. The total amount of the epoxy resin and the curing agent is preferably from 5 to 50% by weight, more preferably from 10 to 40% by weight, particularly preferably from 15 to 30% by weight, from the viewpoint of adhesiveness.
[0018]
Epoxy group-containing acrylic copolymers having a Tg of -10 ° C or higher and a weight average molecular weight of 100,000 or higher containing 2 to 6% by weight of glycidyl (meth) acrylate are commercially available from Nagase Chemtech Co., Ltd. The trade name HTR-860P-3CSP can be used.
The amount of glycidyl (meth) acrylate used as the functional group monomer is set to a copolymer ratio of 2 to 6% by weight. The content is set to 2% by weight or more to obtain an adhesive force, and is set to 6% by weight or less to prevent gelation of rubber.
The remainder preferably uses ethyl (meth) acrylate or butyl (meth) acrylate or a mixture of both, but the mixing ratio is determined in consideration of the Tg of the copolymer. If the Tg is less than -10 ° C, the tackiness of the adhesive film in the B-stage state increases, and the handling property deteriorates. Examples of the polymerization method include pearl polymerization, solution polymerization, and the like, which can be obtained.
The weight-average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more. However, in view of a decrease in strength or flexibility in sheet or film form and an increase in tackiness, the weight average molecular weight is 200,000 or more. , Preferably 500,000 or more, more preferably 700,000 or more.
The amount of the epoxy group-containing acrylic copolymer to be added is preferably from 10 to 80% by weight, more preferably from 20 to 60% by weight, particularly preferably from 40 to 50% by weight, from the viewpoint of high adhesiveness.
[0019]
It is preferable to use a curing accelerator together with the curing agent, and it is preferable to use various imidazoles as the curing accelerator. Examples of the imidazole include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, and the like.
Imidazoles are commercially available from Shikoku Chemicals Corporation under the trade names 2E4MZ, 2PZ-CN, and 2PZ-CNS, with 2PZ-CN being preferred. The curing accelerator preferably does not advance the curing of the adhesive more than necessary, and from the viewpoint of securing long-term stability, the amount is preferably 0.01 to 10% by weight, more preferably 0.05 to 5% by weight, and 0 to 5% by weight. 0.08 to 1% by weight is particularly preferred.
[0020]
Further, it is preferable to use a coupling agent in order to improve the adhesive force with the adherend, and as the coupling agent, a silane coupling agent is preferable. Examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-ureidopropyltriethoxysilane, N-β-aminoethyl-γ- Aminopropyltrimethoxysilane and the like can be mentioned. The above-mentioned silane coupling agent includes NCU A-187 for γ-glycidoxypropyltrimethoxysilane, NCU A-189 for γ-mercaptopropyltrimethoxysilane, NCU A-1100 for γ-aminopropyltriethoxysilane, γ -Ureidopropyltriethoxysilane is NCU A-1160 and N-β-aminoethyl-γ-aminopropyltrimethoxysilane is NCU A-1120, all of which are commercially available from Nippon Unicar Co., Ltd. Can be used. Among them, A-1160 and A-189 are preferable. The amount of the coupling agent is preferably from 0.01 to 10% by weight, more preferably from 0.1 to 5% by weight, and more preferably from 0.5 to 2% by weight, from the viewpoint of the effect of the addition, heat resistance and cost. Particularly preferred.
[0021]
The phenoxy resin is used as a compatible component with the epoxy resin, and is commercially available from Toto Kasei Co., Ltd. under the trade names of Phenoto YP-40, Phenoto YP-50, and Phenoto YP-60. Above all, phenotote YP-50 is preferable.
The amount of the phenoxy resin is preferably 1 to 30% by weight, more preferably 5 to 25% by weight, and more preferably 10 to 20% by weight when it is necessary to add the phenoxy resin in view of the adhesive properties and tackiness. Is particularly preferred.
[0022]
As the resin used for the semiconductor element protective material of the present invention, when the semiconductor element is exposed to a reflow temperature, or at the time of a moisture absorption resistance test or a temperature cycle resistance test, the adhesive strength with the semiconductor element is reduced to such an extent that peeling does not occur. There is no particular limitation on the components as long as it has, for example, a thermoplastic resin such as a polyimide resin, a polyamide resin, a polyether sulfone resin, a polyamide imide resin, an epoxy resin, a bismaleimide resin, a cyanate resin, a phenol resin, a polyurethane resin, and the like. Thermosetting resins, adhesives containing them and mixtures thereof can be used. In addition, when forming a film by spin coating or a bar coater, even when the resin having no adhesiveness in the above resin is exposed to a reflow temperature of a semiconductor element, or during a moisture absorption test or a temperature cycle test, It can be used as long as it has an adhesive force to the semiconductor element to such an extent that it does not peel off.
[0023]
The semiconductor element protective material of the present invention can be obtained on the backside of the semiconductor element by applying a varnish of the semiconductor element protective material on the backside of the semiconductor element using a spin coater, a bar coater, etc., drying by heating, and removing the solvent and the like. it can. At this time, spin coating conditions and heat drying conditions vary depending on the components of the film used, the varnish solvent, and the like, but are generally 70 to 200 ° C. for 3 to 30 minutes.
[0024]
The semiconductor element protective material of the present invention may be prepared by forming a film as an adhesive film and then attaching the film to the semiconductor element by lamination, heat pressing, or the like, instead of forming the film directly on the semiconductor element.
The semiconductor element protective material in that case can be obtained, for example, by using a heat-resistant film as a base material, applying a varnish of the semiconductor element protective material thereon, drying by heating, and removing the solvent. At this time, the heating and drying conditions vary depending on the components of the film used, the solvent of the varnish, and the like, but are generally 70 to 200 ° C. and 3 to 30 minutes. As the conditions for heat lamination of these semiconductor element protective materials to semiconductor elements, the temperature is preferably 120 ° C. or lower, more preferably 100 ° C. or lower, in that the semiconductor elements are not loaded and workability is excellent. , 80 ° C. or less, and the pressure is preferably 5 kgf / cm or less, more preferably 2.5 kgf / cm or less, and particularly preferably 1.5 kgf / cm or less.
Further, since the base material is finally peeled off and used as a semiconductor device, it is preferable that the surface of the base material be subjected to a release treatment with, for example, silicone or the like.
[0025]
The semiconductor element protective material of the present invention is characterized in that the adhesive layer is formed on the back surface of the semiconductor element and subjected to a thermosetting treatment at 170 ° C. for 1 hour. For this purpose, the adhesive strength with the back surface of the semiconductor element at 265 ° C. after the thermal curing treatment is 0.1 MPa or more in a scratch test (using an adhesion tester manufactured by Hitachi Chemical Technoplant Co., Ltd.). Is preferably 0.5 MPa or more, more preferably 1.0 MPa or more.
[0026]
【Example】
Hereinafter, the present invention will be described more specifically with reference to Examples, but the present invention is not limited thereto.
[0027]
(Example 1)
As a semiconductor element protective material, 15 g of a cresol novolac type epoxy resin (epoxy equivalent: 220, YDCN-703 manufactured by Toto Kasei Co., Ltd.) is used as an epoxy resin, and a low water absorbing phenol resin (XLC-LL manufactured by Mitsui Chemicals, Inc.) is used as a curing agent. 13 g, epoxy group-containing acrylic copolymer (using HTR-860P-3 manufactured by Nagase Chemtech Co., Ltd.) 77 g, 1-cyanoethyl-2-phenylimidazole (Cureazole manufactured by Shikoku Chemicals Co., Ltd.) as a curing accelerator 0.1 g of 2PZ-CN), 0.5 g of γ-glycidoxypropyltrimethoxysilane (using NUC A-189 manufactured by Nippon Unicar Co., Ltd.) as a coupling agent, 0.5 g of γ-ureidopropyltriethoxysilane (Japan Use NCU A-1160 manufactured by Unicar Co., Ltd.) 0.9g A composition consisting of 30 g of carbon black (J-308 manufactured by Sanyo Pigment Co., Ltd.) as a black pigment and 12 g of white silica (using SO-C2 manufactured by Admatechs Co., Ltd.) as an inorganic filler is dissolved in an organic solvent cyclohexanone. And a mixed solution having a volatile content of about 15% was prepared. This mixed solution is applied on a substrate, and heated and dried in a first drying oven at 90 ° C./5 minutes and a second drying oven at 140 ° C./5 minutes so that the adhesive layer has a thickness of 50 μm. With this, a semiconductor element protective material was prepared.
[0028]
(Example 2)
As a semiconductor element protective material, 11 g of a cresol novolac type epoxy resin (epoxy equivalent: 220, YDCN-703 manufactured by Toto Kasei Co., Ltd.) was used as an epoxy resin, and a low water absorbing phenol resin (XLC-LL manufactured by Mitsui Chemicals, Inc.) was used as a curing agent. 9g, epoxy group-containing acrylic copolymer (using HTR-860P-3 manufactured by Nagase Chemtech Co., Ltd.), 56g, and 1-cyanoethyl-2-phenylimidazole as a curing accelerator (Cureazole manufactured by Shikoku Chemicals Co., Ltd.) 0.1 g of 2PZ-CN), 0.3 g of γ-glycidoxypropyltrimethoxysilane (using NUC A-189 manufactured by Nippon Unicar Co., Ltd.) as a coupling agent, 0.3 g of γ-ureidopropyltriethoxysilane (Japan NCU A-1160 manufactured by Unicar Co., Ltd.) 0.7 g, A composition consisting of 25 g of carbon black (J-308 manufactured by Sanyo Dye Co., Ltd.) as a black pigment and 20 g of white silica (using SO-C2 manufactured by Admatechs Co., Ltd.) as an inorganic filler was dissolved in an organic solvent cyclohexanone. The mixture was mixed to prepare a mixed solution having a volatile content of about 15%. This mixed solution is applied on a substrate, and heated and dried in a first drying oven at 90 ° C./5 minutes and a second drying oven at 140 ° C./5 minutes so that the adhesive layer has a thickness of 50 μm. With this, a semiconductor element protective material was prepared.
[0029]
(Comparative Example 1)
Adhesive layers containing 0, 2, and 80 g of carbon black in the composition of Example 1 were produced in the same manner as in (Example 1).
[0030]
(Comparative Example 2)
Adhesive layers containing 0, 1, and 40 g of white silica in the composition of Example 2 were produced in the same manner as in (Example 2).
[0031]
The adhesive layer of the obtained semiconductor element protective material was subjected to (1) a thermal curing treatment at 170 ° C. for 1 hour, and then the infrared light shielding property was measured with an FTIR measuring device. The adhesive layer is sandwiched between silicon chips of the same material, thermocompression-bonded at 80 ° C. and 1.5 kgf / cm, and subjected to a thermosetting treatment at 170 ° C. for 1 hour. (3) Adhesive force measurement by a scratch test, and (3) A silicon chip, which is the same material as the back surface of the semiconductor element, and an adhesive layer are thermocompression-bonded at 80 ° C. and 1.5 kgf / cm at 170 ° C. for 1 hour. After performing the heat curing treatment, a pressure cooker test was performed, and the state of separation between the back surface of the semiconductor element and the adhesive layer was confirmed. Table 1 shows the results.
Regarding the infrared light-shielding properties, those having a light-shielding ratio of 99 to 100% in the wavelength region of 1 to 10 μm were rated as ○, and those having less than 99% were rated as x. In the pressure cooker test, 無 い indicates no peeling, and X indicates peeling.
[0032]
[Table 1]
Figure 2004221169
[0033]
From Table 1, it was found that Samples 3, 4, 7, and 8 satisfied the infrared light shielding property. However, from the results of sufficient adhesion to the back surface of the semiconductor element and the result of the pressure cooker test, it was found that Samples 3 and 7 exhibited the most superiority.
[0034]
【The invention's effect】
The semiconductor element protection material of the present invention is characterized in that it completely shields a small amount of electromagnetic waves in the infrared region and has sufficient adhesiveness to a semiconductor element to obtain sufficient reliability as a semiconductor material.
Therefore, a very useful semiconductor element protection material can be provided for a semiconductor device in which slight leakage light in the infrared region causes malfunction.
[Brief description of the drawings]
FIG. 1 is a sectional view of a colored film according to the present invention.
FIG. 2 is a cross-sectional view in which the colored film of the present invention is formed on the surface of a semiconductor element.
FIG. 3 is a sectional view of a semiconductor device using the semiconductor film according to the present invention.
[Explanation of symbols]
1. 1. adhesive layer Substrate 3. 3. cover film Semiconductor element5. Adhesive 6. 6. Semiconductor wiring board Wiring 8. 8. Semiconductor element connecting member Sealant 10. Solder ball

Claims (21)

厚みが１０〜１００μｍのフィルム状半導体素子保護材であって、少なくとも１〜１０μｍの波長領域における遮光率が９９〜１００％である接着剤層を少なくとも有してなる半導体素子保護材。A film-like semiconductor element protection material having a thickness of 10 to 100 μm, wherein the material has at least an adhesive layer having a light shielding ratio of 99 to 100% in a wavelength region of at least 1 to 10 μm. 前記接着剤層が、基材を有してなる請求項１記載の半導体素子保護材。The semiconductor element protective material according to claim 1, wherein the adhesive layer has a base material. 前記接着剤層が、さらにカバーフィルムを有してなる請求項１または２記載の半導体素子保護材。3. The semiconductor element protective material according to claim 1, wherein the adhesive layer further has a cover film. ペースト状の半導体素子保護材であって、該半導体素子保護材は厚み１００μｍとなるように成膜した時、少なくとも１〜１０μｍの波長領域における遮光率が９９〜１００％である半導体素子保護材。A paste-like semiconductor element protective material, wherein the semiconductor element protective material has a light blocking ratio of 99 to 100% in a wavelength region of at least 1 to 10 μm when formed into a film having a thickness of 100 μm. 電磁波吸収剤を含有してなる請求項１〜４記載の半導体素子保護材。5. The semiconductor element protective material according to claim 1, further comprising an electromagnetic wave absorber. 前記電磁波吸収剤が、黒色顔料を含有してなる請求項５記載の半導体素子保護材。The semiconductor element protective material according to claim 5, wherein the electromagnetic wave absorber contains a black pigment. 前記黒色顔料の主成分が、カーボンブラックである請求項６記載の半導体素子保護材。The semiconductor element protective material according to claim 6, wherein a main component of the black pigment is carbon black. 前記カーボンブラックが、Ｃ．Ｉ．Ｐｉｇｍｅｎｔ Ｂｌａｃｋ
７である請求項７記載の半導体素子保護材。The carbon black is C.I. I. Pigment Black
The semiconductor element protective material according to claim 7, wherein 前記電磁波吸収剤が、さらに無機フィラーを含有してなる請求項６〜８記載の半導体素子保護材。9. The semiconductor element protective material according to claim 6, wherein the electromagnetic wave absorber further contains an inorganic filler. 前記無機フィラーの主成分が、白色シリカである請求項９記載の半導体素子保護材。The semiconductor element protective material according to claim 9, wherein a main component of the inorganic filler is white silica. 前記白色フィラーの平均粒径が０．０１〜２０μｍである請求項１０記載の半導体素子保護材。The semiconductor element protective material according to claim 10, wherein the white filler has an average particle size of 0.01 to 20 μm. 前記接着剤層が、熱硬化性樹脂である請求項１〜４記載の半導体素子保護材。The semiconductor element protective material according to claim 1, wherein the adhesive layer is a thermosetting resin. 前記熱硬化性樹脂が、エポキシ樹脂である請求項１２記載の半導体素子保護材。13. The semiconductor element protective material according to claim 12, wherein the thermosetting resin is an epoxy resin. 前記熱硬化性樹脂が、エポキシ基含有アクリル系共重合体を含有してなる請求項１２に記載の半導体素子保護材。The semiconductor element protective material according to claim 12, wherein the thermosetting resin contains an epoxy group-containing acrylic copolymer. 前記接着剤層が、熱可塑性樹脂を含有してなる請求項１〜１４のいずれかに記載の半導体素子保護材。The semiconductor element protection material according to claim 1, wherein the adhesive layer contains a thermoplastic resin. 前記熱可塑性樹脂のＴｇ（ガラス転移温度）が２００℃以下である請求項１５記載の半導体素子保護材。The semiconductor element protection material according to claim 15, wherein the thermoplastic resin has a Tg (glass transition temperature) of 200C or less. 前記熱可塑性樹脂が、ポリイミド樹脂を含む請求項１５または１６記載の半導体素子保護材。17. The semiconductor element protective material according to claim 15, wherein the thermoplastic resin contains a polyimide resin. 以下の組成を特徴とする請求項１〜１４記載の半導体素子保護材。
（１）エポキシ樹脂及びその硬化剤１０〜３０重量％、（２）グリシジル（メタ）アクリレート２〜６重量％を含むＴｇが−１０℃以上でかつ重量平均分子量が６０万以上であるエポキシ基含有アクリル系共重合体３０〜７０重量％、（３）黒色顔料１〜２０重量％、（４）無機フィラー１〜５０重量％。The semiconductor element protective material according to claim 1, wherein the material has the following composition.
(1) Epoxy resin and its curing agent 10 to 30% by weight, (2) Epoxy group containing 2 to 6% by weight of glycidyl (meth) acrylate having a Tg of -10 ° C or more and a weight average molecular weight of 600,000 or more. 30 to 70% by weight of an acrylic copolymer, (3) 1 to 20% by weight of a black pigment, and (4) 1 to 50% by weight of an inorganic filler. 前記接着剤層が、半導体素子裏面に対し圧着温度１６０℃、圧着圧力０．１ＭＰａ、圧着時間２ｓの条件下で熱圧着し、その熱硬化後の２６５℃における半導体素子裏面との接着強度が０．５ＭＰａ以上である請求項１〜４記載の半導体素子保護材。The adhesive layer is thermocompression-bonded to the back surface of the semiconductor element under the conditions of a compression temperature of 160 ° C., a compression pressure of 0.1 MPa, and a compression time of 2 s. 5. The semiconductor element protective material according to claim 1, which has a pressure of 0.5 MPa or more. 前記接着剤層が、半導体素子裏面に対し熱圧着・熱硬化後、さらに温度１２１℃、圧力０．２ＭＰａ、飽和水蒸気状態の条件下に１６８時間保管された後の、２６５℃における半導体素子裏面との接着強度が０．１ＭＰａ以上である請求項１９記載の半導体素子保護材。The adhesive layer, after thermocompression bonding and thermosetting to the back surface of the semiconductor element, further stored at a temperature of 121 ° C., a pressure of 0.2 MPa, and under a condition of saturated steam for 168 hours. 20. The semiconductor element protective material according to claim 19, wherein the adhesive strength of the material is 0.1 MPa or more. 請求項１〜２０のいずれかに記載の半導体素子保護材を半導体素子裏面に貼り付けした構造を有してなる半導体装置。A semiconductor device having a structure in which the semiconductor element protective material according to claim 1 is attached to a back surface of a semiconductor element.
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